Plasma processing equipment

Abstract

This suppresses plasma leakage, which occurs in plasma processing equipment where plasma is present in the exhaust space. [Solution] A plasma processing apparatus comprising a chamber, a substrate support portion provided in the chamber, a gas supply port for supplying a processing gas into the chamber, and a gas outlet to which an exhaust portion for exhausting the chamber is connected, wherein the space within the chamber includes a first space where the substrate is processed and a second space to which the exhaust portion is connected, and further comprises a gas inlet for introducing a predetermined gas with a higher ionization energy than the processing gas into the second space.

Claims

1. A plasma processing apparatus, Chamber and, A substrate support portion provided within the chamber, A gas supply port for supplying processing gas into the chamber, It comprises a gas outlet to which an exhaust unit for exhausting the contents of the chamber is connected, The space within the chamber includes a first space where the substrate is processed and a second space to which the exhaust unit is connected. The system further includes a gas inlet for introducing a predetermined gas with a higher ionization energy than the aforementioned processing gas into the second space. Plasma processing equipment.

2. The second space is formed to surround the substrate support portion, The gas inlet is formed in an annular shape along the side wall of the chamber on the side of the second space. The plasma processing apparatus according to claim 1.

3. The second space is formed to surround the substrate support portion, Multiple gas inlets are provided circumferentially along the side wall of the chamber on the side of the second space. The plasma processing apparatus according to claim 1.

4. The second space is further provided with an exhaust port for exhausting air, The exhaust port is provided downstream of the gas inlet in the exhaust direction and upstream of the gas outlet in the exhaust direction. A plasma processing apparatus according to any one of claims 1 to 3.

5. The plasma processing apparatus according to claim 4, wherein the exhaust flow rate from the exhaust port is greater than the flow rate of gas introduced from the gas inlet.

6. The second space is formed to surround the substrate support portion, The exhaust port is formed in an annular shape along the side wall of the chamber on the side of the second space. The plasma processing apparatus according to claim 4.

7. The second space is formed along the periphery of the substrate support portion, The exhaust ports are provided in a plurality along the side wall of the chamber on the side of the second space in the circumferential direction. The plasma processing apparatus according to claim 4.

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