Semiconductor equipment
The semiconductor device addresses the challenge of higher power supply voltages and faster power-up speeds by adjusting trigger voltage and incorporating a trigger voltage conversion circuit to ensure the power protection circuit operates only in the ESD region, maintaining discharge capability and preventing circuit destruction.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- RENESAS ELECTRONICS CORP
- Filing Date
- 2025-06-16
- Publication Date
- 2026-07-09
AI Technical Summary
The increasing voltage of power supplies and faster power-up speeds in ICs have expanded the normal operating range, posing challenges for power supply protection circuits to meet higher specifications, including unintended activation during normal operation and potential circuit destruction.
A semiconductor device with a power protection circuit that adjusts the trigger voltage by reducing gate resistance and incorporating a trigger voltage conversion circuit to manage higher power supply voltages and faster power-up speeds, ensuring the circuit operates only in the ESD region and maintains sufficient discharge capability.
The solution enables the semiconductor device to satisfy the requirements for power protection circuits by preventing operation within the normal operating range and ensuring the circuit's discharge capability, thus protecting the protected circuit from ESD.
Smart Images
Figure 2026116114000001_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to a semiconductor device, and particularly to a semiconductor device including a power protection circuit.
Background Art
[0002] In an IC (Integrated Circuit) mounted on a semiconductor device, in order to prevent circuit destruction due to ESD (Electro-Static Discharge), it is known to form a power protection circuit within the IC.
[0003] For example, Patent Document 1, Patent Document 2, and Non-Patent Document 1 disclose semiconductor devices configured to form a power protection circuit within an IC and protect a protected circuit.
Prior Art Documents
Patent Documents
[0004]
Patent Document 1
Patent Document 2
Non-Patent Documents
[0005]
Non-Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0006] In recent years, the increasing voltage of power supplies and the speed of power-up have expanded the normal operating range of power supply voltages required for ICs. This, in turn, has led to higher specifications being required for power supply protection circuits.
[0007] Other challenges and novel features will become apparent from the description and accompanying drawings in this specification. [Means for solving the problem]
[0008] According to one embodiment of the present disclosure, a semiconductor device is provided that lowers the trigger voltage when the power supply current exceeds a predetermined value. This makes it possible to satisfy the requirements of a power supply protection circuit in response to higher power supply voltages and faster power supply startup speeds. [Effects of the Invention]
[0009] This disclosure makes it possible to provide a semiconductor device that satisfies the requirements for power protection circuits in response to increased power supply voltage and faster power start-up speeds. [Brief explanation of the drawing]
[0010] [Figure 1] Figure 1 is a circuit diagram of the semiconductor device according to Embodiment 1. [Figure 2] Figure 2A is a simplified circuit diagram of a semiconductor device, and Figures 2B and 2C illustrate the operation of the power supply protection circuit. [Figure 3] Figures 3A and 3B illustrate the operation of the power supply protection circuit. [Figure 4] Figure 4 is a diagram illustrating the operation of the power supply protection circuit in Embodiment 1. [Figure 5] Figure 5 is a circuit diagram of the semiconductor device according to Embodiment 1. [Figure 6] Figures 6A to 6F show examples of elements or resistor circuits according to Embodiment 1. [Figure 7] Figure 7 is a circuit diagram of the semiconductor device according to Embodiment 1. [Figure 8] FIG. 8 is a circuit diagram of the semiconductor device of Embodiment 1. [Figure 9] FIG. 9 is a circuit diagram of the semiconductor device of Embodiment 1. [Figure 10] FIG. 10 is a circuit diagram of the semiconductor device of Embodiment 1. [Figure 11] FIG. 11 is a circuit diagram of the semiconductor device of Embodiment 2. Embodiments of the Invention
[0011] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the specification and the drawings, the same components or corresponding components are denoted by the same reference numerals, and redundant descriptions are omitted. In the drawings, for convenience of explanation, the configuration may be omitted or simplified. In addition, at least a part of each embodiment may be arbitrarily combined with each other.
[0012] In the semiconductor device of the present disclosure, the conductivity type (p-type or n-type) of the semiconductor substrate, semiconductor region, diffusion region, transistor, etc. may be inverted. In the following embodiments, for convenience, an example using an n-type transistor will be described.
[0013] In the present disclosure, the state of "connecting" includes the case of "electrically connecting".
[0014] <Embodiment 1> Hereinafter, a configuration example of the semiconductor device 1 of the present disclosure will be described with reference to the drawings. FIG. 1 is a circuit diagram of the semiconductor device of the present disclosure.
[0015] The semiconductor device 1 shown in FIG. 1 includes a power supply terminal 10 to which a power supply voltage V is supplied from the outside, a ground terminal 20 to which a ground voltage is supplied from the outside, a power supply protection circuit 100, and a protected circuit 200.
[0016] The power supply protection circuit 100 is electrically connected to the power supply terminal 10 and the ground terminal 20 so as to short-circuit the power supply terminal 10 and the ground terminal 20.
[0017] The protected circuit 200 is electrically connected to the power supply protection circuit 100. Furthermore, the protected circuit 200 is electrically located downstream of the power supply protection circuit 100 when the power supply terminal 10 is used as the starting point.
[0018] The power protection circuit 100 includes a first terminal 101, a second terminal 102, a sequence circuit 110, a first control circuit 111, a second control circuit 112, a trigger voltage determination circuit 120, a discharge transistor 130, a first resistor circuit 140, and a trigger voltage conversion circuit 150.
[0019] The first terminal 101 is electrically connected to the power supply terminal 10. The second terminal 102 is electrically connected to the ground terminal 20. For ease of understanding the positional relationship, the first terminal 101 and the second terminal 102 in Figure 1 are shown separately from the trigger voltage determination circuit 120. In the following explanation, the first terminal 101 and the second terminal 102 will be considered to be included within the trigger voltage determination circuit 120.
[0020] The first control circuit 111 and the second control circuit 112 are electrically connected to the trigger voltage determination circuit 120 and the sequence circuit 110, respectively. Furthermore, the first control circuit 111 and the second control circuit 112 are configured to control the sequence circuit 110.
[0021] The discharge transistor 130 comprises a drain D electrically connected to the power supply terminal 10, a source S electrically connected to the ground terminal, and a gate G electrically connected to the first control circuit. Furthermore, the discharge transistor 130 is located electrically downstream of the first terminal 101 of the trigger voltage determination circuit 120 when the power supply terminal 10 is used as the starting point. The discharge transistor 130 is an n-type transistor. Specific examples of n-type transistors include NMOS (N-type Metal Oxide Semiconductor) transistors and NPN bipolar transistors. For convenience, the following explanation will use an example where the discharge transistor 130 is an NMOS.
[0022] The first resistor circuit 140 is electrically connected at one end to the first control circuit 111 and the gate G of the discharge transistor 130, and at the other end to the ground terminal 20 and the source S of the discharge transistor 130.
[0023] The trigger voltage conversion circuit 150 is electrically connected to the sequence circuit 110 and the trigger voltage determination circuit 120.
[0024] Next, we will explain how the power protection circuit 100 protects the protected circuit 200. First, we will explain the basic operation and requirements of the power protection circuit 100 using Figures 2A to 2C.
[0025] Figure 2A is a circuit diagram of a semiconductor device 1 with a simplified power supply protection circuit 100. The simplified power supply protection circuit 100 includes a discharge transistor 130 and a trigger circuit 160. The trigger circuit 160 is a circuit for controlling the discharge transistor 130 according to the power supply voltage V and power supply current I. The discharge transistor 130 suppresses the power supply voltage V applied to the protected circuit 200 by discharging the power supply current I in response to the control of the trigger circuit 160.
[0026] Figures 2B and 2C are plots of the power supply voltage V applied to the protected circuit 200 and the power supply current I flowing through the protected circuit 200, illustrating the operation of the power supply protection circuit 100. The operating range of the power supply voltage V required for the protected circuit 200, which is an IC (Integrated Circuit), is shown in Figures 2B and 2C as the normal operating range 301. The range of power supply voltage V in which the protected circuit 200 is destroyed by ESD (Electrostatic Discharge) is shown in Figures 2B and 2C as the destruction region BR. The range of power supply voltage V in which the power supply protection circuit 100 starts operating to prevent the protected circuit 200 from being destroyed by ESD is shown in Figures 2B and 2C as the ESD region ESDR.
[0027] The power supply protection circuit 100 has the circuit characteristics shown in the power supply protection circuit characteristics 300 in Figures 2B and 2C. The point where the power supply protection circuit characteristics 300 intersects with the failure region BR is defined as the protected circuit failure point BP. At this time, the ESD specification value ESDSV required for the IC is determined according to the product specifications.
[0028] There are two requirements for the power protection circuit 100. The first requirement is that it does not operate within the normal operating range 301 of the protected circuit 200, but only in the ESD region ESDR (see (I) in Figure 2B). The second requirement is that the failure point BP of the protected circuit does not fall below the ESD specification value ESDSV (see (II) in Figure 2B). The power protection circuit characteristics 300 shown in Figure 2B satisfy the above two requirements. On the other hand, the power protection circuit characteristics 300 shown in Figure 2C operate within the normal operating range 301, and the failure point BP of the protected circuit is below the ESD specification value ESDSV, so it can be seen that it does not satisfy the first and second requirements.
[0029] One reason for failing to meet the first requirement is the increased power supply voltage and the faster power-up speed. This increases the slope of the voltage change over time (i.e., dV / dt) during power-up, making the gate voltage GV more prone to fluctuation through the capacitance between the gate G and source S of the discharge transistor 130 in the power supply protection circuit 100. As a result, the protected circuit 200 may activate during normal operation. Unintended current flowing into the protected circuit 200 may disrupt the function of the external power supply or even destroy the protected circuit 200.
[0030] To prevent the power protection circuit 100 from operating within the normal operating range 301, one method is to reduce the gate resistance between the gate G of the discharge transistor 130 and the ground terminal 20, thereby making the gate voltage GV less prone to fluctuation. However, reducing the gate resistance reduces the discharge capability of the discharge transistor 130, making it impossible to obtain sufficient power protection circuit characteristics 300. This is the reason why the second requirement is not met.
[0031] To compensate for the reduced discharge capacity of the power protection circuit characteristics 300, a means of adjusting the trigger voltage that initiates the operation of the power protection circuit 100 between the normal operating range 301 and the breakdown region BR can be mentioned. Figure 3A is a plot of the power supply voltage V applied to the protected circuit 200 and the power supply current I flowing through the protected circuit 200, illustrating the operation of the power protection circuit 100. The second requirement can be satisfied by adjusting the trigger voltage V1, which is below the ESD specification value ESDSV, to the trigger voltage V2, which is above the ESD specification value ESDSV, at which point BP breaks down the protected circuit.
[0032] However, the demand for higher power supply voltages and faster power-up speeds is increasing, and the normal operating range 301 of the protected circuit 200 is expanding. Figure 3B is a plot of the power supply voltage V applied to the protected circuit 200 and the power supply current I flowing through the protected circuit 200 when the normal operating range 301 is expanded, and is a diagram illustrating the operation of the power protection circuit 100. In Figure 3A, the trigger voltage V2 that satisfies the second requirement falls within the expanded normal operating range 301, and therefore the first requirement is no longer met.
[0033] Here, the operation of the power protection circuit 100 of this disclosure will be explained using Figures 1 and 4. Figure 4 is a plot of the power supply voltage V applied to the protected circuit 200 and the power supply current I flowing through the protected circuit 200 when the normal operating range 301 is expanded, and is a diagram illustrating the operation of the power protection circuit 100.
[0034] The first resistor circuit 140 corresponds to the gate resistance between the gate G of the discharge transistor 130 and the ground terminal 20. By reducing the resistance value of the first resistor circuit 140, the gate voltage GV of the discharge transistor 130 becomes less prone to fluctuation, making it easier to satisfy the first requirement (see (i) in Figure 4).
[0035] When the power supply voltage V between the power supply terminal 10 and the ground terminal 20 exceeds the first trigger voltage threshold Vth1, the power supply protection circuit 100 controls the first control circuit 111 to supply a first control current CC1 corresponding to the power supply voltage V to the first resistor circuit 140. The first control current CC1 is the current that controls the gate G of the discharge transistor 130. As a result, the discharge transistor 130 operates, and the power supply current I flows from the drain D of the discharge transistor 130 to the source S (see (ii) in Figure 4).
[0036] Furthermore, the power protection circuit 100 controls the second control circuit 112 to supply a second control current CC2 to the sequence circuit 110. As a result, the sequence circuit 110 enters a standby state.
[0037] When the sequence circuit 110 is in standby mode and the power supply current I exceeds a predetermined value, the power protection circuit 100 controls the sequence circuit 110 to drive the trigger voltage conversion circuit 150 using the first control current CC1. This lowers the power supply voltage V to a second trigger voltage threshold Vth2, which is smaller than the first trigger voltage threshold Vth1 (see (iii) in Figure 4). By operating in this manner, the requirements for a power protection circuit corresponding to higher power supply voltages and faster power-up speeds can be met.
[0038] Next, each component of the power protection circuit 100 will be described in detail. Figure 5 shows a detailed view of the trigger voltage determination circuit 120 in the circuit diagram of the semiconductor device 1 shown in Figure 1. The trigger voltage determination circuit 120 includes a current control circuit 121 and a second resistor circuit 122.
[0039] One end of the second resistor circuit 122 is electrically connected to the power terminal 10. The other end of the second resistor circuit 122 is electrically connected to one end of the current control circuit 121. The other end of the current control circuit 121 is electrically connected to the ground terminal 20. The first control circuit 111 and the second control circuit 112 are each electrically connected to a first node 123, which is composed of the other end of the second resistor circuit 122 and one end of the current control circuit 121.
[0040] The current control circuit 121 is composed of, for example, multiple elements connected in series. The elements are, for example, one of the following: a Zener diode (Figure 6A), a PN junction diode (Figure 6B), a MOS (Metal Oxide Semiconductor) transistor with its gate and drain electrically connected (Figures 6C and 6D), or a bipolar transistor with its base and collector electrically connected (Figures 6E and 6F). Figure 6C shows the configuration of a p-type MOS (PMOS), and Figure 6D shows the configuration of an n-type MOS (NMOS). Figure 6E shows the configuration of an NPN-type bipolar transistor, and Figure 6F shows the configuration of a PNP-type bipolar transistor.
[0041] The trigger voltage is controlled by the number of elements connected in series within the current control circuit 121. As shown in Figure 7, which will be described later, the elements within the current control circuit 121 are arranged in a structure in which a first set of elements 121A and a second set of elements 121B are connected in series.
[0042] The following describes an example of a current control circuit 121, specifically a configuration using multiple Zener diodes connected in series.
[0043] When the power supply voltage V exceeds the trigger voltage threshold Vth1, multiple Zener diodes operate, trigger current TC1 flows into the trigger voltage determination circuit 120, and a control voltage CV1 is generated in the second resistor circuit 122. The first control circuit 111 receives the generated control voltage CV1 and flows a first control current CC1 corresponding to the control voltage CV1 into the first resistor circuit 140 (see (i) in Figure 4). The second control circuit 112 receives the generated control voltage CV1 and flows a second control current CC2 corresponding to the control voltage CV1 into the sequence circuit 110, putting the sequence circuit 110 into standby mode. As the first control current CC1 flows into the first resistor circuit 140, the gate voltage GV of the discharge transistor 130 increases. When the gate voltage GV exceeds a certain value, the discharge transistor 130 is driven and power supply current I flows (see (ii) in Figure 4).
[0044] Figure 7 is a circuit diagram of the semiconductor device 1 shown in Figure 5 when the sequence circuit 110 is in standby mode. When the sequence circuit 110 is in standby mode and the power supply current I exceeds a predetermined value, the power supply protection circuit 100 turns on the switch Sw of the trigger voltage conversion circuit 150. As a result, the second set of elements 121B among the multiple Zener diodes are shorted to the ground terminal 20, and the reverse voltage equal to the number of the second set of elements 121B can be neutralized. Therefore, the number of Zener diodes connected in series can be varied, and the trigger voltage threshold can be changed from Vth1 to Vth2, and the power supply protection circuit characteristics 300 can be moved away from the breakdown region BR (see (iii) in Figure 4).
[0045] The number of the second set of elements 121B, which are multiple Zener diodes shorted to the ground terminal 20, can be adjusted as needed.
[0046] Figure 8 shows a detailed view of the first control circuit 111 and the second control circuit 112 in the circuit diagram of the semiconductor device 1 shown in Figure 5. The first control circuit 111 includes a voltage-current conversion element that converts a control voltage CV1 to a first control current CC1, and the second control circuit 112 includes a voltage-current conversion element that converts a control voltage CV1 to a second control current CC2.
[0047] Examples of such voltage-to-current conversion elements include MOS transistors and bipolar transistors. The drain of a MOS transistor or the collector of a bipolar transistor is electrically connected to the sequence circuit 110. The source of a MOS transistor or the emitter of a bipolar transistor is electrically connected to the power supply terminal 10. The gate of a MOS transistor or the base of a bipolar transistor is electrically connected to the first node 123.
[0048] Figure 9 shows a detailed view of the sequence circuit 110 in the circuit diagram of the semiconductor device 1 shown in Figure 8. When the first control current CC1 flows through the first resistor circuit 140, a gate voltage GV is generated, driving the discharge transistor 130 and causing the power supply current I to flow. This indicates that the power supply current I, the first control current CC1, and the gate voltage GV are proportionally related. Therefore, the magnitude of the gate voltage GV represents the magnitude of the power supply current I and the first control current CC1.
[0049] When the power supply current I exceeds a predetermined value, a gate voltage GV proportional to the power supply current I drives the sequence circuit 110. Subsequently, the second control current CC2 drives the trigger voltage conversion circuit 150 via the sequence circuit 110, and the switch Sw of the trigger voltage conversion circuit 150 turns ON.
[0050] The sequence circuit 110 may include, for example, a MOS transistor or a bipolar transistor. The drain of the MOS transistor or the collector of the bipolar transistor is electrically connected to the second control circuit 112. The source of the MOS transistor or the emitter of the bipolar transistor is electrically connected to the trigger voltage conversion circuit 150. The gate of the MOS transistor or the base of the bipolar transistor is electrically connected to the first control circuit 111.
[0051] Figure 10 shows a detailed view of the trigger voltage conversion circuit 150 in the circuit diagram of the semiconductor device 1 shown in Figure 9. The trigger voltage conversion circuit 150 includes a switch Sw, one end of which is electrically connected to a second node 124 located between the first plurality of elements 121A and the second plurality of elements 121B, and the other end of which is electrically connected to a ground terminal 20.
[0052] When the second control current CC2 flows through the trigger voltage conversion circuit 150, the gate terminal of the trigger voltage conversion circuit 150 is driven, and the switch Sw of the trigger voltage conversion circuit 150 is turned ON. As a result, the second set of elements 121B in the current control circuit 121, which are electrically connected to the drain of the switch Sw, are short-circuited to the ground terminal, thereby neutralizing the reverse voltage equal to the number of the second set of elements 121B.
[0053] The switch Sw of the trigger voltage conversion circuit 150 can be, for example, a MOS transistor or a bipolar transistor. The drain of the MOS transistor or the collector of the bipolar transistor is electrically connected to the second node 124. The source of the MOS transistor or the emitter of the bipolar transistor is electrically connected to the ground terminal 20. The gate of the MOS transistor or the base of the bipolar transistor is electrically connected to the sequence circuit 110.
[0054] The first resistor circuit 140 and the second resistor circuit 122 can use, for example, a PN junction diode (Figure 6B), a MOS transistor with the gate and drain electrically connected (Figure 6C (PMOS) and Figure 6D (NMOS)), or a bipolar transistor with the base and collector electrically connected (Figure 6E (NPN bipolar transistor) and Figure 6F (PNP bipolar transistor)).
[0055] By adopting this configuration, it is possible to provide a semiconductor device that satisfies the requirements for power protection circuits corresponding to higher power supply voltages and faster power-up speeds.
[0056] <Embodiment 2> Embodiment 2 describes a modified version of the semiconductor device 1 of Embodiment 1. Embodiments 1 and 2 can be combined as appropriate, and repeating explanations of configurations similar to those in Embodiment 1 will be omitted.
[0057] Figure 11 is a circuit diagram when a p-type transistor is used as the discharge transistor 130. Similar to Embodiment 1, the trigger voltage thresholds Vth1 and Vth2 are determined by the number of elements connected in series in the current control circuit 121.
[0058] The trigger voltage conversion circuit 150 is electrically connected to the trigger voltage determination circuit 120. The sequence circuit 110 is electrically connected to the trigger voltage determination circuit 120 via the trigger voltage conversion circuit 150. The first control circuit 111 and the second control circuit 112 are electrically connected to the trigger voltage determination circuit 120 and the sequence circuit 110, respectively.
[0059] The discharge transistor 130, which is a p-type transistor, has a source S electrically connected to the power supply terminal 10, a drain D electrically connected to the ground terminal 20, and a gate G electrically connected to the first control circuit 111. Furthermore, the discharge transistor 130 is located electrically downstream of the first terminal 101 of the trigger voltage determination circuit 120 when the power supply terminal 10 is used as the starting point.
[0060] The power protection circuit 100 activates the current control circuit 121 of the trigger voltage determination circuit 120 when the power supply voltage V between the power supply terminal 10 and the ground terminal 20 exceeds the first trigger voltage threshold Vth1. This causes current to flow through the second resistor circuit 122, generating a second control current CC2. Upon receiving the generated second control current CC2, the first control circuit 111 causes a first control current CC1 corresponding to the control voltage CV1 to flow through the first resistor circuit 140, generating a gate voltage GV.
[0061] When the power supply current I exceeds a predetermined value, the gate voltage GV drives the sequence circuit 110. Subsequently, the second control current CC2 drives the trigger voltage conversion circuit 150 via the sequence circuit 110, and the switch Sw of the trigger voltage conversion circuit 150 turns ON.
[0062] In the current control circuit 121, the second set of elements 121B, which are electrically connected to the drain of the switch Sw, short-circuit with the ground terminal, thereby neutralizing the reverse voltage equal to the number of these second set of elements 121B. Therefore, by varying the number of Zener diodes connected in series, the trigger voltage threshold can be changed from Vth1 to Vth2, and the power supply protection circuit characteristics 300 can be moved away from the breakdown region BR.
[0063] The present invention has been described in detail above based on embodiments, but it goes without saying that the present invention is not limited to the embodiments already described, and various modifications are possible without departing from the spirit of the invention. [Explanation of Symbols]
[0064] 1 Semiconductor device 10 Power terminal 20 Ground terminal 100 Power protection circuit 101 1st terminal 102 2nd terminal 110 Sequence Circuit 111 First Control Circuit 112 Second Control Circuit 120 Trigger Voltage Determination Circuit 121 Current control circuit 121A First Multiple Elements 121B Second set of elements 122 2nd resistance circuit 123 Node 1 124 2nd Node 130 Discharge Transistors 140 1st resistance circuit 150 Trigger Voltage Conversion Circuit 160 Trigger Circuit 200 Protected circuit 300 Power protection circuit characteristics 301 Normal operating range
Claims
1. A power terminal to which power voltage is supplied from an external source, A grounding terminal to which ground voltage is supplied from an external source, Power protection circuit, A protected circuit is formed which is electrically connected to the power protection circuit and is electrically located downstream of the power protection circuit when the power terminal is used as the starting point. The aforementioned power supply protection circuit is A trigger voltage determination circuit comprising a first terminal electrically connected to the power supply terminal and a second terminal electrically connected to the ground terminal, A first control circuit electrically connected to the trigger voltage determination circuit, A second control circuit electrically connected to the trigger voltage determination circuit, A sequence circuit electrically connected to the first control circuit and the second control circuit, A trigger voltage conversion circuit electrically connected to the trigger voltage determination circuit and the sequence circuit, A discharge transistor comprising a drain electrically connected to the power terminal, a source electrically connected to the ground terminal, and a gate electrically connected to the first control circuit, wherein the discharge transistor is electrically positioned downstream of the first terminal of the trigger voltage determination circuit when the power terminal is used as the starting point, The system comprises a first resistor circuit, one end of which is electrically connected to the first control circuit and the gate of the discharge transistor, and the other end of which is electrically connected to the ground terminal and the source of the discharge transistor. The power supply protection circuit, when the power supply voltage exceeds the first trigger voltage threshold, The first control circuit is controlled to operate the discharge transistor by flowing a first control current corresponding to the power supply voltage through the first resistor circuit, and the power supply current is flowed through the drain of the discharge transistor. The second control circuit is controlled to supply a second control current to the sequence circuit, thereby putting the sequence circuit into a standby state. When the sequence circuit is in standby mode and the power supply current exceeds a predetermined value, the power supply protection circuit controls the sequence circuit to drive the trigger voltage conversion circuit using the second control current, thereby lowering the power supply voltage to a second trigger voltage threshold that is smaller than the first trigger voltage threshold. Semiconductor equipment.
2. In the semiconductor device described in claim 1, The trigger voltage determination circuit comprises a second resistor circuit and a current control circuit, One end of the second resistor circuit is electrically connected to the power supply terminal, The other end of the second resistor circuit is electrically connected to one end of the current control circuit. The other end of the current control circuit is electrically connected to the ground terminal. The first control circuit and the second control circuit are each electrically connected to a first node, which is composed of the other end of the second resistor circuit and the one end of the current control circuit. Semiconductor equipment.
3. In the semiconductor device described in claim 2, The current control circuit is composed of multiple elements connected in series. Semiconductor equipment.
4. In the semiconductor device described in claim 3, The plurality of elements of the current control circuit have a structure in which a first plurality of elements and a second plurality of elements are connected in series. The trigger voltage conversion circuit includes a switch, one end of which is electrically connected to a second node located between the first plurality of elements and the second plurality of elements, and the other end of which is electrically connected to the ground terminal. Semiconductor equipment.
5. In the semiconductor device according to claim 4, The switch comprises a first transistor which is a MOS (Metal Oxide Semiconductor) transistor or a bipolar transistor. The drain or collector of the first transistor is electrically connected to the second node. The source or emitter of the first transistor is electrically connected to the ground terminal. The gate or base of the first transistor is electrically connected to the sequence circuit. Semiconductor equipment.
6. In the semiconductor device described in claim 2, The aforementioned discharge transistor is either a MOS (Metal Oxide Semiconductor) transistor or a bipolar transistor, and is a semiconductor device.
7. In the semiconductor device described in claim 2, A semiconductor device in which the first resistor circuit and the second resistor circuit are each one of the following: a resistor, a PN junction diode, a MOS (Metal Oxide Semiconductor) transistor with its gate and drain electrically connected, or a bipolar transistor with its base and collector electrically connected.
8. In the semiconductor device described in claim 2, The first control circuit and the second control circuit each include a voltage-to-current conversion element, Semiconductor equipment.
9. In the semiconductor device described in claim 8, The voltage-current conversion element includes a second transistor which is a MOS (Metal Oxide Semiconductor) transistor or a bipolar transistor. The drain or collector of the second transistor is electrically connected to the sequence circuit. The source or emitter of the second transistor is electrically connected to the power supply terminal. The gate or base of the second transistor is electrically connected to the first node. Semiconductor equipment.
10. In the semiconductor device according to claim 4, The sequence circuit includes a third transistor which is a MOS (Metal Oxide Semiconductor) transistor or a bipolar transistor. The gate or base of the third transistor is electrically connected to the first control circuit. The drain or collector of the third transistor is electrically connected to the second control circuit. The source or emitter of the third transistor is electrically connected to the trigger voltage conversion circuit. Semiconductor equipment.
11. In the semiconductor device according to claim 10, The sequence circuit turns on the switch when the second control current flows and the power supply current exceeds the predetermined value. Semiconductor equipment.
12. In the semiconductor device according to claim 4, The element is a Zener diode or a PN junction diode. Semiconductor equipment.
13. In the semiconductor device according to claim 4, The element is a MOS (Metal Oxide Semiconductor) transistor with its gate and drain electrically connected, or a bipolar transistor with its base and collector electrically connected. Semiconductor equipment.
14. A power terminal to which power voltage is supplied from an external source, A grounding terminal to which ground voltage is supplied from an external source, Power protection circuit, A protected circuit is formed which is electrically connected to the power protection circuit and is electrically located downstream of the power protection circuit when the power terminal is used as the starting point. The aforementioned power supply protection circuit is A trigger voltage determination circuit comprising a first terminal electrically connected to the power supply terminal and a second terminal electrically connected to the ground terminal, The trigger voltage determination circuit and the trigger voltage conversion circuit are electrically connected, A sequence circuit electrically connected to the trigger voltage determination circuit via the trigger voltage conversion circuit, A first control circuit electrically connected to the trigger voltage determination circuit and the sequence circuit, A second control circuit electrically connected to the trigger voltage determination circuit and the sequence circuit, A discharge transistor comprising a source electrically connected to the power supply terminal, a drain electrically connected to the ground terminal, and a gate electrically connected to the first control circuit, and positioned electrically downstream of the first terminal of the trigger voltage determination circuit when the power supply terminal is used as the starting point, The system comprises a first resistor circuit, one end of which is electrically connected to the first control circuit and the gate of the discharge transistor, and the other end of which is electrically connected to the power supply terminal and the source of the discharge transistor. The power supply protection circuit, when the power supply voltage exceeds the first trigger voltage threshold, The first control circuit is controlled to operate the discharge transistor by flowing a first control current corresponding to the power supply voltage through the first resistor circuit, and the power supply current is flowed through the drain of the discharge transistor. The second control circuit is controlled to supply a second control current to the sequence circuit, thereby putting the sequence circuit into a standby state. When the sequence circuit is in standby mode and the power supply current exceeds a predetermined value, the power supply protection circuit controls the sequence circuit to drive the trigger voltage conversion circuit using the second control current, thereby lowering the power supply voltage to a second trigger voltage threshold that is smaller than the first trigger voltage threshold. Semiconductor equipment.