Highband architecture for centralized coherent control at the edge of processing tools

Abstract

This provides a control system for impedance matching within semiconductor processing tools. [Solution] The processing tool consists of a power supply 232, an impedance matching network 230 connected to the power supply 232, and an upper electrode 222 which is a cathode. The power supply 232 supplies power to the upper electrode 222 which is a cathode via the impedance matching network 230, and the processing module 234 is connected to the upper electrode 222 which is a cathode, as well as the power supply 232 and the impedance matching network 230 in a communicative manner.

Description

Technical Field

[0001] Cross - Reference to Related Applications This application claims priority to U.S. Patent Application No. 17 / 737,659, filed on May 5, 2022, the entire content of which is incorporated herein by reference.

[0002] Embodiments relate to the field of semiconductor manufacturing, and more particularly, to a control system for impedance matching within a semiconductor processing tool.

Background Art

[0003] In a plasma processing tool, plasma is ignited by a cathode coupled to a process gas within a chamber. In most tools, the power supply is coupled to the cathode through an impedance matching network (sometimes simply referred to as a "matcher"). The matcher enables adjustment of the system impedance for matching with the impedance of the load to which the cathode is coupled. The load has a wide range of impedances defined by parameters such as processing conditions and chamber structure. Impedance matching is important for efficient power transfer from the power supply to the load.

[0004] Generally, the matching network is controlled by a distributed control architecture. In such a system, control is established locally for the system and corresponding subsystems. Interactions between systems occur through a network. Networked devices have a narrow control bandwidth, a large group delay, and limited peer - to - peer cooperation. The local scheme inhibits higher - order coherence between interconnected systems.

Summary of the Invention

[0005] Embodiments disclosed herein include processing tools. In one embodiment, the processing tool comprises a power supply, an impedance matching network connected to the power supply, a cathode, wherein the power supply is configured to supply power to the cathode via the impedance matching network, and a processing module communicably connected to the power supply and the impedance matching network.

[0006] Embodiments disclosed herein may further include a processing power control module. In one embodiment, the processing power control module comprises an RF platform board, a carrier card for an analog-to-digital converter (ADC), a heterogeneous computing module (HCM), a programmable logic board, a real-time processing unit (RTPU), and a messaging controller.

[0007] Embodiments disclosed herein may further comprise a semiconductor processing tool. In one embodiment, the semiconductor processing tool comprises a power supply, a cathode, wherein the power supply is configured to supply power to the cathode via an impedance matching network, and a processing module communicably coupled to the power supply and the impedance matching network, the processing module comprising an RF platform board, a carrier card for an analog-to-digital converter (ADC), a heterogeneous computing module (HCM), a programmable logic board, a real-time processing unit (RTPU), and a messaging controller. [Brief explanation of the drawing]

[0008] [Figure 1] This is a schematic diagram of a plasma processing tool including a central control architecture according to an embodiment. [Figure 2A] This is a schematic diagram of a plasma processing tool according to an embodiment, which includes a processing power control module connected to a matching network connected to the upper cathode within the plasma processing tool. [Figure 2B]This is a schematic diagram of a plasma processing tool according to an embodiment, which includes a processing power control module connected to a bias source in a substrate support within the plasma processing tool. [Figure 2C] This is a schematic diagram of a plasma processing tool, according to an embodiment, which includes a matched network for RF control and non-sinusoidal control within the plasma processing tool. [Figure 3A] This is a schematic diagram of a plasma processing tool having a single power supply with a single output, according to an embodiment. [Figure 3B] This is a schematic diagram of a plasma processing tool having a single power supply and a pair of outputs, according to an embodiment. [Figure 3C] This is a schematic diagram of a plasma processing tool having a pair of single-output power supplies according to an embodiment. [Figure 3D] This is a schematic diagram of a plasma processing tool having a set of three power supplies, each having a single output, according to an embodiment. [Figure 4] This is a schematic diagram of a power processing module according to an embodiment. [Figure 5] A block diagram of an exemplary computer system that may be used in conjunction with a processing tool, according to one embodiment, is shown. [Modes for carrying out the invention]

[0009] The systems described herein include semiconductor processing tools that include a control system for impedance matching in the semiconductor processing tool. Numerous specific details are presented in the following description to provide a comprehensive understanding of the embodiments. Those skilled in the art will see that embodiments can be carried out without these specific details. In other cases, well-known embodiments are not described in detail to avoid unnecessarily obscuring the embodiments. Furthermore, it should be understood that the various embodiments shown in the accompanying figures are illustrative and not necessarily drawn to scale.

[0010] As described above, existing control methods for power supplies and associated impedance matching networks have shortcomings. In one embodiment, various architectures exist that enable coherent control of the power supply. In one embodiment, the power supply is controlled by a controller. The controller receives feedback from sensors located before and after the impedance matching network. For example, the sensors may be current sensors and voltage sensors. The sensor information can be used to operate a variable capacitor in a matcher to match the impedance of the load.

[0011] The embodiments are flexibly configurable to accommodate various power supply architectures. For example, one, two, three, or more power sources may be supplied to the matcher, and one, two, or more outputs may be supplied from the matcher. Thus, there is flexibility to accommodate power supply architectures according to various embodiments.

[0012] Referring now to Figure 1, a more detailed schematic diagram of a plasma processing tool 100 according to an embodiment is shown. In one embodiment, the plasma processing tool 100 includes a plasma chamber 120. The plasma chamber 120 includes a cathode 122 for coupling the received power to one or more gases flowing into the plasma chamber 120. In one embodiment, the plasma chamber 120 may be suitable for any plasma processing typical of a semiconductor manufacturing environment. For example, the plasma chamber 120 may be a plasma etching chamber, a plasma deposition chamber, a plasma processing chamber, etc. In a particular embodiment, the plasma chamber 120 may be a plasma chemical vapor deposition (PECVD) chamber, a physical vapor deposition (PVD) chamber, or a plasma-enhanced atomic layer deposition (PEALD) chamber.

[0013] In one embodiment, the plasma chamber 120 may be connected to a power supply architecture. For example, the power supply architecture may consist of one or more power supplies 1321-132 nThis may include. In the illustrated embodiments, multiple power supplies 132 are shown. However, it should be understood that in some embodiments, a single power supply 132 may be used. In one embodiment, power supply 132 may include any type of power supply. For example, power supply 132 may be an RF power supply, a microwave power supply, a direct current (DC) power supply, a pulsed DC power supply, etc.

[0014] In one embodiment, power supply 132 may be connected to cathode 122 via impedance matching network 130. The impedance matching network 130 modifies the impedance of the power supply architecture to match the load in chamber 120. The load impedance may fluctuate due to changes in processing conditions (e.g., gas flow rate, pressure, temperature, etc.). Therefore, the impedance matching network 130 is used to match the fluctuating impedance in order to provide an efficient power supply in the chamber (i.e., with no or minimal reflected power).

[0015] In one embodiment, sensors 151 and 152 may be provided on both sides of the impedance matching network 130. For example, sensors 1511-151 n However, the impedance matching network 130 may be located upstream, and the sensor 152 may be located downstream of the impedance matching network 130. "Upstream" may refer to the input side of the matching network 130, and "downstream" may refer to the output side of the matching network 130. As shown in the figure, multiple sensors 1511-151 n However, it is located upstream of the impedance matching network 130. The number of sensors 151 may be equal to the number of power supplies 132. That is, each power supply 132 has its own dedicated sensor 151. Downstream of the impedance matching network 130 may have a single sensor 152. However, it should be understood that if there is one or more outputs from the matching network 130, additional sensors 152 may be present. For example, if there are two outputs (e.g., for the center of chamber 120 and for the ends of chamber 120), there may be two sensors 152.

[0016] In one embodiment, sensors 151 and 152 can be any suitable sensor architecture that can be used to monitor the flow of power from power supply 132 to cathode 122. In a particular embodiment, sensors 151 and 152 are sensors for detecting voltage (V) and current (I). In one embodiment, sensor 151 couples to an electromagnetic signal on the power coupling transmission line. The power supply cable (e.g., a wire, etc.) passes through the center of the ring.

[0017] In one embodiment, sensors 151 and 152 can be communicatively coupled to processing module 134. As shown in the figure, in FIG. 1, processing power control module 134 is provided. However, it should be understood that the processing module may be a microwave processing module 134, a DC processing module, etc., depending on the type of power supply 132 included in tool 100. In one embodiment, sensors 151 and 152 supply voltage and / or current to processing module 134. In one embodiment, processing module 134 may have external connections such as ENET and ECAT connections.

[0018] In one embodiment, processing module In one embodiment, processing module 134 can be coupled to impedance matching network by an analog / digital link. Through the analog / digital link, processing module 134 may be able to transmit a control signal to impedance matching network 130. For example, the control signal can be used to adjust the capacitance of a variable capacitor in impedance matching network 130. Further, processing module 134 can be coupled to power supply 132 by an analog / digital link. Therefore, processing module 134 can perform cooperative impedance adjustment. In one embodiment, the analog / digital link may have transceivers corresponding to both ends of the link.

[0019] Referring now to Figure 2A, a schematic diagram of a semiconductor processing tool 200 according to an additional embodiment is shown. As shown, the processing tool 200 may include a chamber 220. An upper electrode 222 may be provided as a lid to the chamber 220. A pedestal 223 for supporting a substrate 224 may be provided inside the chamber 220. In one embodiment, the substrate 224 may be a semiconductor wafer typical of semiconductor processing processes or any other substrate. In one embodiment, the upper electrode 222 may be connected to a power supply architecture.

[0020] In one embodiment, the power supply architecture may be a power supply 232. The power supply 232 may be an RF power supply, a microwave power supply, a direct current (DC) power supply, a pulsed DC power supply, etc. In one embodiment, the power supply 232 may be connected to a processing module 234. In a particular embodiment, the power supply 232 may be a 13.56 MHz RF power supply. In one embodiment, the processing module 234 may include a current control module 241. Furthermore, the processing module may include an RF sensor processing block 242. The RF sensor processing block 242 may include circuitry for receiving and interpreting outputs from sensors 261 and 262. In one embodiment, sensor 261 may be upstream of the impedance matching network 230, and sensor 262 may be downstream of the impedance matching network 230. Sensors 261 and 262 may be current and voltage sensors.

[0021] In one embodiment, the processing module 234 may further include a tuning circuit 243 and a uniformity control block 244. The tuning circuit 243 and the uniformity control block 244 may be communicatively coupled to an actuator controller 235 in an impedance matching network 230. The actuator controller 235 can be operated to change the capacitance of a variable capacitor in the impedance matching network 230 in order to control the impedance via the impedance matching network 230. In certain embodiments, the capacitor is a mechanical capacitor. In other embodiments, the capacitor is a solid-state capacitor.

[0022] Referring now to FIG. 2B, a schematic diagram of a semiconductor processing tool 200 according to an additional embodiment is shown. In one embodiment, the processing tool 200 may include a chamber 220. An upper electrode 222 may be provided as a lid to the chamber 220. In one embodiment, a pedestal 223 for supporting a substrate 224 may be at the bottom of the chamber 220. In certain embodiments, the pedestal 223 may be connected to one or more power supplies 232. In the embodiment shown in FIG. 2B, the semiconductor processing tool 200 may include a first power supply 2321 and a second power supply 2322. One or more power supplies 232 may be used in various embodiments.

[0023] In one embodiment, the power supply 232 may be connected to a processing module 234. For example, the power supply 232 may be supplied to a voltage controller 245. For example, the first power supply 2321 may be a 2 MHz RF power supply, and the second power supply 2322 may be a 13.56 MHz RF power supply.

[0024] In one embodiment, the voltage control block 245 may be connected to a sensor processing block 242. In one embodiment, the sensor processing block 242 may be communicably connected to a plurality of sensors. For example, a pair of first sensors 2611 and 2622 may be upstream of the impedance matching network 230. The first sensors 2611 and 2612 may be sensors for the input of the first power supply 2321 and the second power supply 2322 into the impedance matching network 230. In one embodiment, a second sensor 262 may be downstream of the impedance matching network 230. The first sensor 261 and the second sensor 262 may be current and voltage sensors, as described in more detail above.

[0025] In one embodiment, the tuning circuit 243 and the current ratio control block 244 may be communicatively connected to the sensor processing block 242. The tuning circuit 243 and the uniformity control block 244 may be communicatively connected to the actuator controller 235 in the impedance matching network 230. The actuator controller 235 can be operated to change the capacitance of a variable capacitor in the impedance matching network 230 in order to control the impedance via the impedance matching network 230. In certain embodiments, the capacitor is a mechanical capacitor. In other embodiments, the capacitor is a solid variable impedance device.

[0026] In Figure 2A, the power supply architecture is connected to the upper electrode, and in Figure 2B, the power supply architecture is connected to the lower pedestal. However, it should be understood that in other embodiments, the power supply architecture may be connected to both the upper electrode and the lower pedestal. In such embodiments, a pair of power supply architectures may be used. In this case, one is used for the upper electrode and the other for the lower pedestal.

[0027] Referring now to Figure 2C, a schematic diagram of a semiconductor processing tool 200 according to an additional embodiment is shown. In one embodiment, the semiconductor processing tool 200 includes a chamber 220. The chamber is sealed by an upper electrode 222. In one embodiment, a pedestal 223 may be provided at the bottom of the chamber 220. The pedestal 223 is configured to hold a substrate 224.

[0028] In one embodiment, the processing module 234 may be connected to the chamber 220. In one embodiment, the processing module 234 may be a processing power control module, but other power sources (e.g., microwave or DC) may be used. In one embodiment, the processing module 234 may be connected to two or more power sources. For example, the AEC controller 246 may have a block 247 connected to an RF generator 232 (e.g., a 40 MHz generator) and a block 248 connected to a non-sinusoidal supply system 238.

[0029] In one embodiment, a non-sinusoidal supply sensor processing block 249 may be connected to sensors on a non-sinusoidal supply matcher 237. For example, the sensors may include a first sensor 263 and a second sensor 264. The first sensor 263 may provide measurements of edge voltage and edge current. The second sensor 263 may provide measurements of wafer voltage and wafer current.

[0030] In one embodiment, the RF sensor processing block 242 may also be connected to a pair of sensors. For example, the first sensor 261 may be upstream of the RF impedance matching device 230, and the second sensor 262 may be downstream of the RF impedance matching device 230. The downstream side of the RF matcher may be connected to the pedestal 223. In one embodiment, the first sensor 261 and the second sensor 262 may be current and voltage sensors.

[0031] In one embodiment, the processing power control module 234 may further include a tuning circuit 243. The tuning circuit 243 may be connected to a motor controller in an RF matcher 230. The tuning circuit 243 may be used to adjust the impedance in the RF matcher 230. For example, the motor controller 235 may adjust the position of one or more variable capacitors to change the impedance of the system.

[0032] Referring to Figures 3A to 3D, a series of schematic diagrams of the processing tool 300 according to various embodiments are shown. In the illustrated embodiments, various inputs and outputs are provided inside and outside the impedance matching network 330. Furthermore, the circuit architecture within the impedance matching network 330 is shown.

[0033] Referring now to Figure 3A, a semiconductor processing tool 300 according to an embodiment is shown. In one embodiment, the semiconductor processing tool 300 includes a power supply 332. The power supply 332 shown in Figure 3A is an RF generator. However, it should be understood that other power supplies may be used according to additional embodiments. In one embodiment, the power supply 332 may be connected to a first sensor 351. The first sensor 351 may be upstream of the impedance matching network 330. In one embodiment, the first sensor 351 is a voltage and current sensor. In one embodiment, the impedance matching network 330 may follow the first sensor 351.

[0034] The impedance matching network 330 may include a first capacitor C1 and a second capacitor C2. The first capacitor C1 and the second capacitor C2 may be variable capacitors. The first capacitor C1 may be located between the input to the impedance matching network 330 and ground. The second capacitor C2 may be located between the input to the impedance matching network 330 and the output of the impedance matching network 330.

[0035] In one embodiment, the output of the impedance matching network 330 may be connected to a second sensor 352. The second sensor 352 may be a voltage and current sensor. In one embodiment, the first sensor 351 and the second sensor 352 may be connected to a processing module (not shown) similar to the processing power control module described in more detail above. In one embodiment, the second sensor 352 may be located between the impedance matching network 330 and the plasma source 320. For example, the plasma source 320 may be a plasma processing chamber such as a PECVD chamber, a PEALD chamber, a PVD chamber, or a plasma processing chamber.

[0036] Referring now to Figure 3B, a schematic diagram of a semiconductor processing tool 300 according to an embodiment is shown. In one embodiment, the semiconductor processing tool 300 is equipped with a power supply 332. The power supply 332 shown in Figure 3B is an RF generator. However, it should be understood that other power supplies may be used according to additional embodiments. In one embodiment, the power supply 332 may be connected to a first sensor 351. The first sensor 351 may be upstream of the impedance matching network 330. In one embodiment, the first sensor 351 is a voltage and current sensor. In one embodiment, the impedance matching network 330 may follow the first sensor 351.

[0037] The impedance matching network 330 may include a first capacitor C1, a second capacitor C2, and a third capacitor C3. The first capacitor C1, the second capacitor C2, and the third capacitor C3 may be variable capacitors. The first capacitor C1 may be located between the input to the impedance matching network 330 and ground. The second capacitor C2 may be located between the input to the impedance matching network 330 and the first output of the impedance matching network 330. The third capacitor C3 may be located between the second capacitor C2 and the second output of the impedance matching network 330. For example, the first output is used for the inner portion of the plasma source, and the second output is used for the outer portion of the plasma source. By controlling the capacitance of the third capacitor C3, the power division between the inner portion and the outer portion of the plasma source is determined.

[0038] In one embodiment, second sensors 3521 and 3522 may be provided between the impedance matching network 330 and the plasma source 320. In one embodiment, the second sensors 3521 and 3522 may be current and voltage sensors. In one embodiment, the first sensor 351 and the second sensor 352 may be connected to a processing module (not shown) similar to the processing power control module described in more detail above. In one embodiment, the second sensor 352 may be located between the impedance matching network 330 and the plasma source 320. For example, the plasma source 320 may be a plasma processing chamber such as a PECVD chamber, a PEALD chamber, a PVD chamber, or a plasma processing chamber.

[0039] Referring now to Figure 3C, a schematic diagram of a semiconductor processing tool 300 according to an additional embodiment is shown. In one embodiment, the semiconductor processing tool 300 includes a pair of power supplies 332A and 332B. The power supplies 332A and 332B shown in Figure 3C are RF generators. However, it should be understood that other power supplies may be used according to additional embodiments. In one embodiment, power supply 332 may be connected to one of the first sensors 351A or 351B. The first sensor 351 may be upstream of the impedance matching network 330. In one embodiment, the first sensor 351 is a voltage and current sensor. In one embodiment, the impedance matching network 330 may follow the first sensor 351.

[0040] As shown in the figure, a pair of inputs may be provided for the impedance matching network 330. The first input may be provided by a first power supply 332A, and the second input may be provided by a second power supply 332B. Each input of the impedance matching network 330 may include a first capacitor C1 and a second capacitor C2. The first capacitor C1 and the second capacitor C2 may be variable capacitors. The first capacitor C1 may be located between the input to the impedance matching network 330 and ground. The second capacitor C2 may be located between the input to the impedance matching network 330 and the output of the impedance matching network 330. In one embodiment, the two input sources may be integrated after the second capacitor C2 to provide a single output.

[0041] In one embodiment, the output of the impedance matching network 330 may be connected to a second sensor 352. The second sensor 352 may be a voltage and current sensor. In one embodiment, the first sensor 351 and the second sensor 352 may be connected to a processing module (not shown) similar to the processing power control module described in more detail above. In one embodiment, the second sensor 352 may be located between the impedance matching network 330 and the plasma source 320. For example, the plasma source 320 may be a plasma processing chamber such as a PECVD chamber, a PEALD chamber, a PVD chamber, or a plasma processing chamber.

[0042] Referring now to Figure 3D, a schematic diagram of a semiconductor processing tool 300 according to an embodiment is shown. In one embodiment, the semiconductor processing tool 300 includes a set of three power supplies 332A, 332B, and 332C. The power supplies 332A, 332B, and 332C shown in Figure 3D are RF generators. However, it should be understood that other power supplies may be used according to additional embodiments. In one embodiment, power supply 332 may be connected to one of the first sensors 351A, 351B, or 351C. The first sensor 351 may be upstream of the impedance matching network 330. In one embodiment, the first sensor 351 is a voltage and current sensor. In one embodiment, the impedance matching network 330 may follow the first sensor 351.

[0043] As shown in the figure, a set of three inputs may be provided for the impedance matching network 330. The first input may be provided by a first power supply 332A, the second input may be provided by a second power supply 332B, and the third input may be provided by a third power supply 332C. Each input of the impedance matching network 330 may include a first capacitor C1 and a second capacitor C2. The first capacitor C1 and the second capacitor C2 may be variable capacitors. The first capacitor C1 may be located between the input to the impedance matching network 330 and ground. The second capacitor C2 may be located between the input to the impedance matching network 330 and the output of the impedance matching network 330. In one embodiment, the three input sources may be integrated after the second capacitor C2 to provide a single output.

[0044] In one embodiment, the output of the impedance matching network 330 may be connected to a second sensor 352. The second sensor 352 may be a voltage and current sensor. In one embodiment, the first sensor 351 and the second sensor 352 may be connected to a processing module (not shown) similar to the processing power control module described in more detail above. In one embodiment, the second sensor 352 may be located between the impedance matching network 330 and the plasma source 320. For example, the plasma source 320 may be a plasma processing chamber such as a PECVD chamber, a PEALD chamber, a PVD chamber, or a plasma processing chamber.

[0045] Referring now to Figure 4, a block diagram of a processing module 434 according to an embodiment is shown. In one embodiment, the processing module 434 may include a platform board 470, such as an RF platform board. In one embodiment, the platform board 470 may be a printed circuit board (PCB), etc. In one embodiment, the platform board provides a board-to-board connector that supports connectivity to various combinations of a heterogeneous computing module (HCM) 471 and dual ADCs 475. The HCM 471 may be a module composed of a high-performance, highly integrated CPU and programmable logic. The platform board 470 may support two Ethernet interfaces, such as an ECAT module and a USB (memory device). The platform board 470 may include an actuator controller 485. And, in the various use cases described above in Figures 3A to 3D, a driver is required. In one embodiment, the platform board 470 may partition voltage rails and supplies for functionality on the platform board 470, a carrier card 474, and the HCM 471.

[0046] In one embodiment, the platform board 470 may have two carrier cards 474 to support a variant of the ADC 475 combination. For a single sensor 451, only one carrier card 474 slot is filled by the ADC assembly 475, and RF coupling is supported by passive elements to the ADC 475 input. For a dual sensor 451 configuration, both carrier slots are used with the coupling circuit and dual ADC 475. To coordinate four sensor 451 inputs, two independent carrier slots 474 are combined to form a solution for supporting two quad ADC 475 or eight-input ADC 475.

[0047] In one embodiment, the HCM471 includes a programmable logic board 472 and a real-time processing unit (RTPU) board 473. The logic board 472 and the RTPU 473 may be coupled to a memory device (e.g., DRAM). A messaging controller and host may also be provided on the HCM471.

[0048] In one embodiment, the RTPU473 includes an impedance matching / frequency control block 476. The impedance matching / frequency control block 476 is a processing component that calculates position commands for the variable capacitor and solid-state tuning element from measurements of the transmission line. In some embodiments, there may be up to three impedance matching / frequency control blocks 476.

[0049] In one embodiment, the RTPU473 may further comprise a current ratio control block 484. The current ratio control block 484 is a processing component that calculates commands for various elements to guide RF power between outputs. In some embodiments, the RF current is targeted. However, in other embodiments, voltage and / or phase values ​​can also be controlled. In other embodiments, the current ratio control block 484 can be optionally omitted.

[0050] In one embodiment, the RTPU 473 may further comprise a Safe Operating Area (SOA) administrator control block 483. The SOA administrator control block is a processing component for generating power and coupling RF power to a dynamic load. This subsystem may have an SOA related to maximum dissipation, creepage, and clearance. This processing module can not only issue warnings for operation under high dissipation loads but can also actively change the RF power.

[0051] In one embodiment, the RTPU 473 may further comprise an RF source control block 477, which may include components for controlling an RF power setpoint based on a measured RF quantified from input / output sensors. The RF setpoint is derived in CW mode and pulse mode. Line loss compensation is incorporated into the command setpoint to the RF power supply.

[0052] In one embodiment, the RTPU 473 may further comprise an impedance matching / frequency control block 482. For cluster tools, multiple RF power supply systems may be used. This agent provides a local computing engine that interfaces with a global administrator to improve repeatability and reproducible performance on the cluster tool. Such embodiments can be formulated using an evolving trellis shared with a supervising global agent.

[0053] In one embodiment, the RTPU 473 may further comprise a pulse monitor agent 478. The pulse monitor agent 478 may collect a statistical summary from the compilation of measured and calculated pulse results. In one embodiment, the RTPU 473 may further comprise an RF agent 481. The RF agent 481 provides a set of configurable parameters for triggering a high-resolution set of a series of samples. The trigger configuration is devised from various measurement parameters having a variable number of samples or acquisition time. In one embodiment, the RTPU 473 may further comprise an impedance matching calibration agent 479. The impedance matching calibration agent 479 manages the calibration of the impedance matching network. In one embodiment, the RTPU 473 may further comprise a sensor calibration agent 480. The sensor calibration agent 480 can manage the calibration and sampling time of an RF sensor for accurate frequency measurement.

[0054] Referring here to Figure 5, a block diagram of an exemplary computer system 500 of a processing tool is shown according to an embodiment. In one embodiment, the computer system 500 is connected to a processing tool and controls the processing within the processing tool. The computer system 500 may be connected to (e.g., networked) other machines in a local area network (LAN), intranet, extranet, or internet. The computer system 500 may operate as a server or client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The computer system 500 may be a personal computer (PC), tablet PC, set-top box (STB), personal digital assistant (PDA), mobile phone, web appliance, server, network router, switch or bridge, or any machine capable of executing a set of instructions (sequential or different) that specify the actions performed by that machine. Furthermore, although only a single machine is shown as computer system 500, the term “machine” should be further interpreted to include any collection of machines (e.g., computers) that individually or in conjunction execute a set (or set) of instructions in order to carry out any one or more of the methods described herein.

[0055] The computer system 500 may include a computer program product or software 522 having a non-transient machine-readable medium on which instructions are stored, and these instructions may be used to program the computer system 500 (or other electronic device) to perform processing according to the embodiment. The machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer). For example, the machine-readable (e.g., computer-readable) medium includes machine (e.g., computer)-readable storage media (e.g., read-only memory (ROM), random-access memory (RAM), magnetic disk storage media, optical storage media, flash memory devices, etc.), machine (e.g., computer)-readable transmission media (in the form of electrical, optical, acoustic, or other propagating signals (e.g., infrared signals, digital signals, etc.)), etc.

[0056] In one embodiment, the computer system 500 includes a system processor 502, main memory 504 (e.g., read-only memory (ROM), flash memory, synchronous DRAM (SDRAM), or rhombus DRAM (RDRAM), or other dynamic random access memory (DRAM)), static memory 506 (e.g., flash memory, static random access memory (SRAM), etc.), and secondary memory 518 (e.g., a data storage device), all of which communicate with each other via a bus 530.

[0057] The system processor 502 represents one or more general-purpose processing devices, such as a microsystem processor or a central processing unit. More specifically, the system processor may be a composite instruction set arithmetic (CISC) microsystem processor, a reduced instruction set arithmetic (RISC) microsystem processor, a very long instruction word (VLIW) microsystem processor, a system processor that executes other instruction sets, or a system processor that executes a combination of instruction sets. The system processor 502 may also be one or more special-purpose processing devices, such as an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a digital signal system processor (DSP), or a network system processor. The system processor 502 is configured to execute processing logic 526 for performing the operations described herein.

[0058] The computer system 500 may further include a system network interface device 508 for communicating with other devices or machines. The computer system 500 may further include a video display unit 510 (e.g., a liquid crystal display (LCD), a light-emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 512 (e.g., a keyboard), a cursor control device 514 (e.g., a mouse), and a signal generation device 516 (e.g., a speaker).

[0059] The secondary memory 518 may include a machine-accessible storage medium 532 (or, more specifically, a computer-readable storage medium) storing one or more sets of instructions (e.g., software 522) that embody any one or more of the methods or functions described herein. The software 522 may also reside, all or at least partially, in the main memory 504 and / or the system processor 502 while being executed by the computer system 500, and the main memory 504 and the system processor 502 may also constitute a machine-readable storage medium. The software 522 may be further transmitted and received over the network 520 via the system network interface device 508. In one embodiment, the network interface device 508 may operate using RF coupling, optical coupling, acoustic coupling, or inductive coupling.

[0060] In the exemplary embodiments, the machine-accessible storage medium 532 was shown as a single medium, but the term “machine-readable storage medium” should be understood to include a single medium or multiple mediums that store one or more sets of instructions (e.g., a centralized or distributed database, and / or associated caches and servers). Furthermore, the term “machine-readable storage medium” should be interpreted to include any medium capable of storing or encoding a set of instructions executed by a machine, and causing the machine to execute one or more of these methods. Therefore, the term “machine-readable storage medium” should be interpreted to include, but not be limited to, solid memory, optical media, and magnetic media.

[0061] The above specification describes specific exemplary embodiments. It will be apparent that various modifications can be made to these exemplary embodiments without departing from the scope of the following claims. Therefore, this specification and the drawings should be considered illustrative, not limiting.

Claims

1. It is a processing tool, power supply, An impedance matching network connected to the aforementioned power supply, A cathode wherein the power supply is configured to supply power to the cathode via the impedance matching network, and A processing module that is communicatively connected to the aforementioned power supply and impedance matching network. A processing tool equipped with these features.

2. The processing tool according to claim 1, wherein a first sensor is provided upstream of the impedance matching network and a second sensor is provided downstream of the impedance matching network.

3. The processing tool according to claim 2, wherein the first sensor and the second sensor are communicateably connected to the processing module.

4. The processing tool according to claim 2, wherein the first sensor and the second sensor are voltage / current sensors.

5. The processing tool according to claim 1, further comprising a plurality of power supplies connected to the impedance matching network.

6. A plurality of first sensors, wherein each of the plurality of first sensors is located between the individual power supplies of the plurality of power supplies and the impedance matching network, and The processing tool according to claim 5, further comprising a second sensor between the impedance matching network and the cathode.

7. The processing tool according to claim 1, wherein the cathode is located inside a plasma chamber.

8. The processing tool according to claim 1, wherein the power supply is an RF power supply.

9. The processing tool according to claim 1, wherein the power supply is a microwave power supply.

10. The processing tool according to claim 1, wherein the power supply is a DC power supply.

11. The processing tool according to claim 1, wherein the impedance matching network modifies the impedance of the electrical path between the power supply and the cathode in order to match the impedance of a load connected to the cathode.

12. The processing tool according to claim 1, wherein the cathode is the upper electrode in the plasma chamber.

13. The processing tool according to claim 1, wherein the cathode is the lower electrode in the plasma chamber.

14. A processing power control module, RF platform board, Carrier card for analog-to-digital converters (ADCs) Heterogeneous Computing Module (HCM), Programmable logic board, Real-time processing unit (RTPU), and Messaging controller A processing power control module equipped with this feature.

15. The processing power control module according to claim 14, wherein the RTPU comprises an impedance matching / frequency control module.

16. The processing power control module according to claim 14, wherein the RTPU comprises a current ratio control module.

17. The processing power control module according to claim 14, wherein the RTPU comprises an RF source control module.

18. The processing power control module according to claim 14, wherein the RTPU comprises one or more of the impedance matching / frequency agent, pulse monitor agent, impedance matching calibration agent, and sensor calibration agent.

19. It is a semiconductor processing tool, power supply, An impedance matching network connected to the aforementioned power supply, A cathode wherein the power supply is configured to supply power to the cathode via the impedance matching network, and A processing module that is communicably connected to the power supply and the impedance matching network, RF platform board and A carrier card for analog-to-digital converters (ADCs), Heterogeneous Computing Module (HCM) and Programmable logic board and Real-time processing unit (RTPU), Messaging controller and Processing module equipped with A semiconductor processing tool equipped with these features.

20. The processing tool according to claim 19, wherein a first sensor is provided upstream of the impedance matching network and a second sensor is provided downstream of the impedance matching network.

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