Semiconductor equipment

Abstract

To provide a semiconductor device having good electrical characteristics. [Solution] The transistor 200 comprises a first conductor 205 and a second insulator 216 on a first insulator 214, a third insulator 222 on them, a fourth insulator 224 on it, a first oxide 230a on it, a second oxide 230b and a third oxide 230c on it, and a second conductor 24 in contact with the top surface of the third insulator, the side surface of the fourth insulator, the side surface of the first oxide, the side surface of the second oxide and the top surface. The capacitive element 100 has 2a, a third conductor 242b in contact with the upper surface of the third insulator, the side surface of the fourth insulator, the side surface of the first oxide, and the upper surface of the side surface of the third oxide, a fourth oxide 243a, 243b on the second oxide, a fifth insulator 250 on the fourth oxide, and a fourth conductor 260 on the fourth oxide, and the capacitive element 100 has a fifth conductor 204 on the first insulator, a third insulator on the first insulator, and a second conductor on the first insulator.

Description

Technical Field

[0001] One aspect of the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. Alternatively, one aspect of the present invention relates to a semiconductor wafer, a module, and an electronic device. In the present specification and the like, the semiconductor device generally refers to any device that can function by utilizing semiconductor characteristics. Semiconductor devices include semiconductor elements such as transistors, semiconductor circuits, arithmetic units, and storage devices as one aspect. Display devices (such as liquid crystal display devices and light-emitting display devices), projection devices, lighting devices, electro-optical devices, power storage devices, storage devices, semiconductor circuits, imaging devices, and electronic devices may be said to have semiconductor devices in some cases.

[0002] Note that one aspect of the present invention is not limited to the above technical field. One aspect of the invention disclosed in the present specification and the like relates to an article, a method, or a manufacturing method. Alternatively, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter).

[0003] [[ID=,18]]

[0004]

[0005]

Background Art

[0004] In recent years, the development of semiconductor devices has advanced, and LSIs, CPUs, and memories are mainly used. A CPU is an aggregate of semiconductor elements having a semiconductor integrated circuit (at least transistors and memories) separated from a semiconductor wafer and having electrodes as connection terminals formed thereon.

[0005] Semiconductor circuits (IC chips) such as LSIs, CPUs, and memories are mounted on a circuit board, for example, a printed wiring board, and used as one of the components of various electronic devices.

[0006]

[0006] Furthermore, a transistor is constructed using a semiconductor thin film formed on a substrate having an insulating surface. The technology is attracting attention. This transistor is used in integrated circuits (ICs) and image display devices (simply display). It is widely applied to electronic devices (also referred to as devices). Applicable to transistors. Silicon-based semiconductor materials are widely known as capable semiconductor thin films, but other materials include Oxide semiconductors are attracting attention.

[0007] Furthermore, transistors using oxide semiconductors have extremely low leakage current in the non-conductive state. It is known to be small. For example, the leakage current of a transistor using an oxide semiconductor is Low-power CPUs and other devices that take advantage of this characteristic have been disclosed (see Patent Document 1). ). Also, for example, the characteristic of low leakage current in transistors using oxide semiconductors. Applications of this technology include the disclosure of memory devices that can retain memory contents over long periods of time. (See Patent Document 2.)

[0008] Furthermore, in recent years, with the miniaturization and weight reduction of electronic devices, the need for even higher density integrated circuits has increased. Demand is increasing. Furthermore, there is a need for improved productivity in semiconductor devices, including integrated circuits. [Prior art documents] [Patent Documents]

[0009] [Patent Document 1] Japanese Patent Publication No. 2012-257187 [Patent Document 2] Japanese Patent Publication No. 2011-151383 [Overview of the project] [Problems that the invention aims to solve]

[0010] One aspect of the present invention aims to provide a semiconductor device having good electrical characteristics. Alternatively, one aspect of the present invention provides a semiconductor device having normally-off electrical characteristics. One of the challenges is to achieve this. Alternatively, one aspect of the present invention provides a semiconductor device with good reliability. One of the objectives is to provide a semiconductor with a high on-current. Alternatively, one aspect of the present invention is a semiconductor with a high on-current. One of the objectives is to provide an apparatus. Alternatively, one aspect of the present invention provides a high frequency characteristic. One objective is to provide a semiconductor device having a micro One of the objectives is to provide a semiconductor device that can be miniaturized or highly integrated. One aspect of the invention aims to provide a highly productive semiconductor device.

[0011] One aspect of the present invention provides a semiconductor device capable of retaining data over a long period of time. This is one of the challenges. One aspect of the present invention provides a semiconductor device with a high information writing speed. One of the challenges is to provide a semiconductor device with a high degree of design freedom. This is one of the challenges. One aspect of the present invention is a semiconductor device that can reduce power consumption. One of the objectives of this invention is to provide a novel semiconductor device. This will be one of the challenges.

[0012] Furthermore, the description of these problems does not preclude the existence of other problems. One approach does not require that all of these issues be resolved. The title will become clear from the description in the specification, drawings, claims, etc. It is possible to extract other issues from the descriptions in the drawings, claims, etc. [Means for solving the problem]

[0013] One aspect of the present invention is a semiconductor device having an oxide in a channel forming region, and the semiconductor device The device has a transistor and a capacitive element, and the transistor has a first on a first insulator A conductor and a second insulator, and a third insulator on the first conductor and on the second insulator, A fourth insulator on a third insulator, a first oxide on the fourth insulator, and on the first oxide The second oxide and the third oxide, the top surface of the third insulator, the side surface of the fourth insulator, the first The second conductor in contact with the side surface of the oxide, the side surface of the second oxide, and the top surface of the second oxide , the top surface of the third insulator, the side surface of the fourth insulator, the side surface of the first oxide, the side surface of the third oxide , and a third conductor in contact with the upper surface of the third oxide, and a fourth oxide on the first oxide , comprising a fifth insulator on a fourth oxide and a fourth conductor on the fifth insulator, and a capacitance element The child has a fifth conductor on the first insulator, a third insulator on the fifth conductor, and a third insulator A semiconductor device having a second conductor on the body.

[0014] Furthermore, the first to third oxides are composed of In and element M (where M is Al, Ga, Y, or Sn). Preferably, it contains Zn.

[0015] Furthermore, the third insulator may be any of the following: aluminum, hafnium, zirconium, or tantalum. It is preferable to include one.

[0016] Furthermore, the first insulator preferably contains silicon and nitrogen. [Effects of the Invention]

[0017] According to one aspect of the present invention, a semiconductor device having good electrical characteristics can be provided. Alternatively, according to one aspect of the present invention, a semiconductor device having normally-off electrical characteristics is provided. This is possible. Alternatively, according to one aspect of the present invention, a reliable semiconductor device can be provided. This is possible. Alternatively, according to one aspect of the present invention, a semiconductor device with a large on-current is provided. This is possible. Alternatively, according to one aspect of the present invention, a semiconductor device having high frequency characteristics can be provided. It can be provided. Alternatively, according to one aspect of the present invention, a semiconductor capable of miniaturization or high integration can be provided. A conductive device can be provided. Alternatively, according to one aspect of the present invention, a highly productive semiconductor can be provided. We can provide the device.

[0018] Alternatively, a semiconductor device capable of retaining data over a long period of time can be provided. Alternatively, it is possible to provide a semiconductor device with a high data writing speed. Or, designing it yourself It is possible to provide semiconductor devices with high flexibility, or to reduce power consumption. We can provide semiconductor devices. Or, we can provide novel semiconductor devices. .

[0019] Furthermore, the description of these effects does not preclude the existence of other effects. One embodiment does not need to have all of these effects. Other effects are described in the specification. This will become clear from the description in the drawings, claims, etc., and the specification, drawings, claims From descriptions such as these, it is possible to extract other effects. [Brief explanation of the drawing]

[0020] [Figure 1] Figure 1(A) is a top view showing an example of the configuration of a semiconductor device. Figures 1(B), (C), and (D) are cross-sectional views showing examples of the configuration of a semiconductor device. [Figure 2]Figure 2(A) is a top view showing an example of the configuration of a semiconductor device. Figures 2(B), (C), and (D) are cross-sectional views showing examples of the configuration of a semiconductor device. [Figure 3] Figure 3(A) is a top view showing an example of the configuration of a semiconductor device. Figures 3(B), (C), and (D) are cross-sectional views showing examples of the configuration of a semiconductor device. [Figure 4] Figure 4(A) is a top view showing the method for manufacturing a semiconductor device. Figures 4(B), (C), and (D) are cross-sectional views showing the method for manufacturing a semiconductor device. [Figure 5] Figure 5(A) is a top view showing a method for manufacturing a semiconductor device. Figures 5(B), (C), and (D) are cross-sectional views showing a method for manufacturing a semiconductor device. [Figure 6] Figure 6(A) is a top view showing the method for manufacturing a semiconductor device. Figures 6(B), (C), and (D) are cross-sectional views showing the method for manufacturing a semiconductor device. [Figure 7] Figure 7(A) is a top view showing the method for manufacturing a semiconductor device. Figures 7(B), (C), and (D) are cross-sectional views showing the method for manufacturing a semiconductor device. [Figure 8] Figure 8(A) is a top view showing the method for manufacturing a semiconductor device. Figures 8(B), (C), and (D) are cross-sectional views showing the method for manufacturing a semiconductor device. [Figure 9] Figure 9(A) is a top view showing a method for manufacturing a semiconductor device. Figures 9(B), (C), and (D) are cross-sectional views showing a method for manufacturing a semiconductor device. [Figure 10] Figure 10(A) is a top view showing the method for manufacturing a semiconductor device. Figures 10(B), (C), and (D) are cross-sectional views showing the method for manufacturing a semiconductor device. [Figure 11] Figure 11(A) is a top view showing the method for manufacturing a semiconductor device. Figures 11(B), (C), and (D) are cross-sectional views showing the method for manufacturing a semiconductor device. [Figure 12] Figure 12(A) is a top view showing the method for manufacturing a semiconductor device. Figures 12(B), (C), and (D) are cross-sectional views showing the method for manufacturing a semiconductor device. [Figure 13]Figure 13(A) is a top view showing the method for manufacturing a semiconductor device. Figures 13(B), (C), and (D) are cross-sectional views showing the method for manufacturing a semiconductor device. [Figure 14] Figure 14(A) is a top view showing a method for manufacturing a semiconductor device. Figures 14(B), (C), and (D) are cross-sectional views showing a method for manufacturing a semiconductor device. [Figure 15] Figure 15(A) illustrates the classification of IGZO crystal structures. Figure 15(B) illustrates the XRD spectrum of quartz glass. Figure 15(C) illustrates the XRD spectrum of crystalline IGZO. [Figure 16] Figure 16 is a cross-sectional view showing an example of the configuration of a semiconductor device. [Figure 17] Figure 17 is a cross-sectional view showing an example of the configuration of a semiconductor device. [Figure 18] Figure 18 is a cross-sectional view showing an example of the configuration of a semiconductor device. [Figure 19] Figure 19 is a cross-sectional view showing an example of a storage device configuration. [Figure 20] Figure 20 is a cross-sectional view showing an example of a storage device configuration. [Figure 21] Figure 21 is a diagram showing various types of storage devices in a hierarchical structure. [Figure 22] Figure 22(A) is a block diagram showing an example of a storage device configuration. Figure 22(B) is a perspective view showing an example of a storage device configuration. [Figure 23] Figures 23(A), (B), and (C) are circuit diagrams showing example configurations of memory devices. [Figure 24] Figures 24(A) and (B) illustrate an example of an electronic component. [Figure 25] Figures 25(A), (B), (C), (D), and (E) are schematic diagrams showing examples of memory device configurations. [Figure 26] Figures 26(A), (B), (C), (D), (E1), (E2), and (F) are diagrams of electronic devices. [Modes for carrying out the invention]

[0021] The embodiments will be described below with reference to the drawings. However, many embodiments are described. It can be implemented in different ways, without deviating from its purpose and scope. It will be readily apparent to those skilled in the art that the form and details can be varied in various ways. Therefore, the present invention shall not be construed as being limited to the contents described in the following embodiments.

[0022] Furthermore, in the drawings, the size, layer thickness, or area may be exaggerated for clarity. This may be the case. Therefore, it is not necessarily limited to that scale. Note that the drawing is an ideal This is a schematic example and is not limited to the shapes or values ​​shown in the diagram. For example, In the actual manufacturing process, processes such as etching can cause layers and resist masks to be altered as intended. Although there may be some reduction in volume, this is sometimes not reflected in the diagram for the sake of ease of understanding. In drawings, the same reference numeral is used for identical parts or parts having similar functions across different drawings. It is used in common, and explanations of its repetition may be omitted. Also, in cases where similar functions are referred to... In some cases, the hatch patterns are the same, and no specific designation is assigned.

[0023] Furthermore, especially in top views (also called "plan views") and perspective views, the invention is made easily understandable. Therefore, the description of some components may be omitted. Also, some hidden lines and other elements may be omitted. It may be omitted.

[0024] Furthermore, the ordinal numbers used in this specification, etc., as "1st," "2nd," etc., are used for convenience only. It does not indicate the order of processes or stacking order. Therefore, for example, "the first" should be written as "the second". This can be explained by appropriately replacing it with "of" or "the third of," etc. The ordinal numbers described herein do not correspond to the ordinal numbers used to specify one aspect of the present invention. There are cases where this is the case.

[0025] Furthermore, in this specification, phrases indicating placement such as "above" and "below" refer to the relative positions of the components. The positional relationships are used for convenience in explaining them by referring to the diagram. Also, the positions of the components are shown. The relationships change as appropriate depending on the direction in which each component is described. Therefore, in the specification... The terms explained are not limited to those used in the text; they can be appropriately rephrased depending on the context.

[0026] For example, in this specification, it is explicitly stated that X and Y are connected. In this case, X and Y are electrically connected, and X and Y are functionally connected. The cases disclosed in this specification, etc., include cases where X and Y are directly connected. Therefore, it is limited to predetermined connection relationships, for example, connection relationships shown in a diagram or text. Furthermore, connections other than those shown in the diagram or text are also disclosed in the diagram or text. It shall be considered as such.

[0027] Here, X and Y are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, etc.) Let's assume it is a layer, etc.

[0028] Furthermore, the source and drain functions may differ when using transistors with different polarities, or when the circuit The direction of the current may change during operation, which can cause the current to switch positions. In detailed documents, the terms "source" and "drain" may be used interchangeably. ru.

[0029] In this specification, depending on the transistor structure, channel formation may actually occur. Channel width in the channel formation region (hereinafter also referred to as "effective channel width") (hereinafter referred to as "apparent channel") and the channel width shown in the top view of the transistor (hereinafter referred to as "apparent channel") The "gate width" (also called the "gate width") may differ from the "gate width" (or "gate width") of the semiconductor. For example, when the gate covers the side of the semiconductor. The effective channel width becomes larger than the apparent channel width, and this effect cannot be ignored. In some cases, it may disappear. For example, in transistors that are very small and whose gates cover the side of the semiconductor, In some cases, the proportion of channel formation regions formed on the side surface of the semiconductor can become large. Therefore, the effective channel width becomes larger than the apparent channel width.

[0030] In such cases, it can be difficult to estimate the effective channel width through actual measurements. For example, in order to estimate the effective channel width from the design value, the shape of the semiconductor is known. A certain assumption is necessary. Therefore, if the shape of the semiconductor is not precisely known, the effective It is difficult to accurately measure channel width.

[0031] In this specification, when simply referred to as "channel width," it refers to the apparent channel width. There is. Or, in this specification, when simply referred to as channel width, it means effective channel It can refer to width. Note that it can also refer to channel length, channel width, effective channel width, or apparent width. Channel width and other parameters can be determined by analyzing cross-sectional TEM images, etc. can.

[0032] Furthermore, semiconductor impurities refer to components other than the main components that make up the semiconductor, for example, concentrated Elements with a concentration of less than 0.1 atomic percent are considered impurities. The presence of impurities can, for example, lead to... High Density of States (DOS) of semiconductors and low crystallinity In some cases, such as the following may occur. If the semiconductor is an oxide semiconductor, the properties of the semiconductor may change. Examples of impurities that can be altered include Group 1 elements, Group 2 elements, Group 13 elements, and Group 14 elements. These include elements, Group 15 elements, and transition metals other than the main components of oxide semiconductors, for example, Examples include hydrogen, lithium, sodium, silicon, boron, phosphorus, carbon, and nitrogen. In the case of semiconductors, water can also function as an impurity. Also, in the case of oxide semiconductors, for example... In some cases, the presence of impurities can lead to the formation of oxygen vacancies. Also, if the semiconductor is silicon... In this case, impurities that alter the properties of semiconductors include, for example, Group 1 elements other than oxygen and hydrogen. These include Group 2 elements, Group 13 elements, Group 15 elements, and so on.

[0033] In this specification, silicon oxidnitride is defined as having a composition that contains more oxygen than nitrogen. It has a high content of [something]. Also, silicon nitride oxide, in terms of its composition, has more oxygen than [something]. It has a high nitrogen content.

[0034] Furthermore, in this specification, the term "insulator" shall be replaced with "insulating film" or "insulating layer." It is possible to replace the term "conductor" with "conductive film" or "conductive layer." This is possible. Also, the term "semiconductor" can be replaced with "semiconductor film" or "semiconductor layer." can.

[0035] Furthermore, in this specification, "parallel" means that two straight lines have an angle of -10 degrees or more and 10 degrees or less. This refers to a state where objects are arranged in degrees. Therefore, it also includes cases where the angle is between -5 degrees and 5 degrees. Furthermore, "approximately parallel" refers to a state where two straight lines are positioned at an angle of -30 degrees or more and 30 degrees or less. This refers to a straight line. Furthermore, "perpendicular" means that two straight lines are positioned at an angle of 80 degrees or more and 100 degrees or less. This refers to a state where something is perpendicular. Therefore, it also includes cases where the angle is between 85 degrees and 95 degrees. "A straight line" refers to a state in which two straight lines are positioned at an angle between 60 degrees and 120 degrees.

[0036] In this specification, a barrier film is defined as a film that suppresses the permeation of impurities such as water and hydrogen, as well as oxygen. A membrane that has a controlling function, and if the barrier membrane is conductive, it is called a conductive barrier. It is sometimes called the diaphragm.

[0037] In this specification, metal oxide refers to metal in a broad sense. It is an oxide. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). ), oxide semiconductor (also called Oxide Semiconductor or simply OS) They are classified into categories such as the following. For example, when a metal oxide is used in the semiconductor layer of a transistor, the gold Oxides are sometimes referred to as oxide semiconductors. That is, OS FETs or OS transistors. When referring to a transistor, it means a transistor having an oxide or oxide semiconductor. It can be rephrased.

[0038] Furthermore, in this specification, normally off means not applying a potential to the gate, or The current flowing through the transistor per 1 μm of channel width when the gate is given a ground potential. However, at room temperature, 1 × 10 -20 A or less, 1 × 10 at 85℃ -18 A or less, or 1 × 10 at 125℃ -16 This means being less than or equal to A.

[0039] (Embodiment 1) Hereinafter, a semiconductor having a transistor 200 and a capacitive element 100 according to one aspect of the present invention will be described. An example of a conductive device and its manufacturing method will be described.

[0040] <Example of semiconductor device configuration> Figures 1(A), 1(B), 1(C), and 1(D) illustrate one aspect of the present invention. These are top and cross-sectional views of a semiconductor device having a transistor 200 and a capacitive element 100. ru.

[0041] Figure 1(A) shows the top view of a semiconductor device having a transistor 200 and a capacitive element 100. This is a diagram. Figures 1(B), 1(C), and 1(D) show cross-sections of the semiconductor device. This is a diagram. Here, Figure 1(B) is a cross-section of the area indicated by the dashed line A1-A2 in Figure 1(A). This is a diagram, and it is also a cross-sectional view of the transistor 200 and the capacitive element 100 in the channel length direction. Furthermore, Figure 1(C) is a cross-sectional view of the area shown by the dashed line A3-A4 in Figure 1(A). This is also a cross-sectional view of transistor 200 in the channel width direction. Also, Figure 1(D) is a cross-sectional view of Figure 1( A) is a cross-sectional view of the area indicated by the dashed line A5-A6, and shows the channel width of the capacitive element 100. This is also a cross-sectional view. Note that in the top view of Figure 1(A), some elements have been omitted for clarity. It's omitted.

[0042] A semiconductor device according to one aspect of the present invention comprises an insulator 214 on a substrate (not shown) and an insulator 214 The transistor 200 and the capacitive element 100 are shown above, and the transistor 200 and the capacitive element Insulator 280 on sub 100, insulator 282 on insulator 280, and insulation on insulator 282 The structure includes a body 283, an insulator 284 on the insulator 283, and an insulator 274 on the insulator 284. do. Insulator 214, insulator 216, insulator 280, insulator 282, insulator 283, and The insulator 274 functions as an interlayer film. It is also electrically connected to the transistor 200. It has a conductor 240 that functions as a plug. An insulator 241 is provided in contact with the side surface of the insulator 283 and the conductor 240 Above it, a conductor 246 is provided that is electrically connected to the conductor 240 and functions as wiring. Furthermore, an insulator 284 is provided on the conductor 246 and on the insulator 283.

[0043] Also, insulators 272, 273, 280, 282, and 28 An insulator 241 is provided in contact with the inner wall of the opening 3, and a conductor 240 is provided in contact with its side surface. A conductor 1 is provided, and a second conductor 240 is provided further inside. Thus, the height of the top surface of the conductor 240 and the height of the top surface of the insulator 283 can be made to be approximately the same. In transistor 200, the first conductor of conductor 240 and the second conductor of conductor 240 Although this invention describes a configuration in which electrical bodies are stacked, the present invention is not limited to this. For example, Alternatively, the conductor 240 may be provided as a single layer or as a laminated structure of three or more layers. When a structure has a layered structure, ordinal numbers may be assigned to distinguish it based on the order of formation.

[0044] [Transistor 200] As shown in Figure 1(B), the transistor 200 is connected to the insulator 216 on the insulator 214, Conductors 205 (conductors 205a and conductors) are arranged to be embedded in the insulator 216. The electric body 205b), the insulator 222 on the insulator 216 and the conductor 205, and the insulator 2 The insulator 224 on 22, the oxide 230a on the insulator 224, and the oxide on the oxide 230a Material 230b, oxides 243a and 243b on oxide 230b, and insulator 22 Top surface of 2, side surface of insulator 224, side surface of oxide 230a, side surface of oxide 230b, oxide The conductor 242a is in contact with the side surface of 243a and the top surface of the oxide 243a, and the insulator 222 Top surface, side surface of insulator 224, side surface of oxide 230a, side surface of oxide 230b, oxide 2 The conductor 242b is in contact with the side surface of 43b and the upper surface of the oxide 243b, and the insulator 222 Top surface, side surface of conductor 242a, top surface of conductor 242a, side surface of conductor 242b, and conductor The insulators 272 that are in contact with the upper surface of the electric body 242b, and the insulator 273 on the insulator 272 , oxide 230c on oxide 230b, insulator 250 on oxide 230c, and insulator 2 Located above 50, the conductor 260 (conductor 260a, and conductor) overlaps with oxide 230c 260b) and also has. In addition, oxide 230c is on the side of oxide 243a, oxide 24 The side of 3b, the side of conductor 242a, the side of conductor 242b, the side of insulator 272, and The conductor 260 is in contact with the sides of the insulator 273, respectively. It has a conductor 260b, and a conductor 260a is arranged so as to enclose the bottom and sides of the conductor 260b. Here, as shown in Figure 1(B), the upper surface of the conductor 260 is the upper surface of the insulator 250. It is positioned approximately in conjunction with the upper surface of the oxide 230c. In addition, the insulator 282 is positioned relative to the conductor 26 It is in contact with the upper surfaces of 0, insulator 250, oxide 230c, and insulator 280, respectively.

[0045] In the following, oxides 243a and 243b will be collectively referred to as oxide 243. There are cases where conductors 242a and conductors 242b are collectively referred to as conductor 242. There is.

[0046] In transistor 200, the conductor 260 functions as the gate of the transistor. Conductors 242a and 242b are used as source electrodes or drain electrodes, respectively. It works. Transistor 200 has a conductor 260 that acts as the gate, and an insulator 280. Formed by insulator 273, insulator 272, conductor 242, and oxide 243. The conductor 260 is formed in a self-aligning manner to fill the opening. Therefore, the conductor 260 is positioned in the region between the conductor 242a and the conductor 242b. It can be positioned with absolute certainty.

[0047] Also, insulator 214, insulator 222, insulator 272, insulator 273, insulator 282, and at least one of the insulators 283 is hydrogen (for example, hydrogen atoms, hydrogen molecules, etc.) It is preferable that the insulator 214 has the function of either (i) or suppressing the diffusion of water molecules. Insulator 273 and insulator 283 contain hydrogen (e.g., hydrogen atoms, hydrogen molecules, etc.) It is preferable that the insulator 21 has a high function of suppressing the diffusion of water molecules. 4. Insulators 222, 272, 273, 282, and 283 At least one inhibits the diffusion of oxygen (e.g., at least one such as an oxygen atom or oxygen molecule). It is preferable that the insulators 214, 222, and 272 have the function of providing this function. Insulator 273, insulator 282, and at least one of insulator 283 are connected to insulator 224. It is preferable that the permeability of either or both oxygen and hydrogen is low. Insulator 214, At least the edge 222, insulator 272, insulator 273, insulator 282, and insulator 283 It is preferable that the permeability of either or both oxygen and hydrogen is lower than that of the insulator 250. It's fine. Insulator 214, insulator 222, insulator 272, insulator 273, insulator 282, and at least one of the insulators 283 has more oxygen and hydrogen than insulator 280, or both. It is preferable that the permeability of the material is low.

[0048] Insulator 214, insulator 222, insulator 272, insulator 273, insulator 282, and insulator Examples of the edge material 283 include aluminum oxide, hafnium oxide, gallium oxide, and The use of zinc gallium oxide, silicon nitride, or silicon nitride oxide is possible. Yes, it is possible. In particular, for insulators 214 and 283, which have higher hydrogen barrier properties, It is preferable to use silicon nitride or silicon nitride oxide.

[0049] Furthermore, as shown in Figure 1(B), in one embodiment of the semiconductor device shown in this embodiment, an insulator A portion of the side of 224 is in contact with the conductor 242, and the conductor 242 is covered by the insulator 272, The configuration involves placing an insulator 273 on the edge 272. Therefore, the insulator 272 and The insulator 273 seals the conductor 242, thereby suppressing oxidation of the conductor 242. This is possible. Also, hydrogen in the insulator 224 is absorbed into the insulator 272 through the conductor 242. This may occur, and is preferable.

[0050] Furthermore, oxide 230 consists of oxide 230a on the insulator 224 and oxide 230a on the oxide 230a. Material 230b and a component placed on the oxide 230b, with at least a portion of it on the upper surface of the oxide 230b It is preferable to have the oxide 230c in contact with the other. Here, the side surface of the oxide 230c is Oxide 243a, Oxide 243b, Conductor 242a, Conductor 242b, Insulator 272, Insulator It is preferable that the edge 273 and the insulator 280 are provided in contact with each other.

[0051] Furthermore, in transistor 200, in the channel formation region and its vicinity, oxide 23 This describes a configuration in which three layers are stacked: 0a, oxide 230b, and oxide 230c. However, the present invention is not limited thereto. For example, a single layer of oxide 230b, oxide 23 A two-layer structure of 0b and oxide 230a, a two-layer structure of oxide 230b and oxide 230c, or A configuration with four or more layers is also possible. For example, a two-layer structure of oxide 230c may be used. Alternatively, a configuration with a four-layer laminated structure may be used.

[0052] Transistor 200 contains an oxide 230 (oxide 230a, oxide) including a channel formation region. In material 230b and oxide 230c), a metal oxide (hereinafter referred to as follows) that functions as an oxide semiconductor is added. It is preferable to use an oxide semiconductor (also called an oxide semiconductor). For example, a semiconductor that functions as an oxide semiconductor The metal oxides used have an energy gap of 2 eV or more, preferably 2.5 eV or more. It is preferable to use a metal oxide with a large energy gap. Therefore, the leakage current (off-current) of transistor 200 in the non-conductive state is made extremely small. This makes it possible to create low-power semiconductor devices using such transistors. We can provide it.

[0053] For example, as oxide 230, In-M-Zn oxide (where element M is aluminum, galvanic acid) Umium, yttrium, tin, copper, vanadium, beryllium, boron, titanium, iron, nickel Germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium One or more types selected from luminous, tantalum, tungsten, or magnesium. It is preferable to use metal oxides such as ) . In particular, element M can be aluminum, gallium, yttrium It is preferable to use um or tin. Also, as oxide 230, In oxide and In-M oxide can be used. In-Zn oxide or M-Zn oxide may also be used.

[0054] Oxide 230 consists of oxide 230a, oxide 230b on oxide 230a, and oxide 2 It has oxide 230c on 30b, and oxide 230a below oxide 230b. Therefore, impurities are transferred from the structure formed below oxide 230a to oxide 230b. Diffusion can be suppressed. Also, by having oxide 230c on oxide 230b , diffusion of impurities from structures formed above oxide 230c to oxide 230b It can be suppressed.

[0055] Furthermore, oxide 230 has a layered structure of multiple layers with different atomic ratios of each metal atom. This is preferable. Specifically, in the metal oxide used for oxide 230a, among the constituent elements The atomic ratio of element M in the metal oxide used in oxide 230b is the element M in the constituent elements. It is preferable that the atomic ratio is greater than that. Also, the metal oxide used in oxide 230a Furthermore, the atomic ratio of element M to In is, in the metal oxide used in oxide 230b, It is preferable that the atomic ratio of element M to In is greater than that. Also, when used in oxide 230b In the metal oxide, the atomic ratio of In to element M is the same as that of the metal used in oxide 230a. In oxides, it is preferable that the atomic ratio of In to element M is greater than that of the oxide. Material 230c is a metal oxide that can be used in oxide 230a or oxide 230b. It can be used.

[0056] Specifically, for oxide 230a, In:Ga:Zn = 1:3:4 [atomic ratio], Gold with a composition in its vicinity, or a composition of 1:1:0.5 [atomic ratio], or a composition in its vicinity. A group oxide can be used. Also, for oxide 230b, In:Ga:Zn = 4:2:3 [Atomic ratio], or a composition near that ratio, or 1:1:1 [atomic ratio], or near that ratio A metal oxide with a similar composition can be used. Also, as oxide 230c, In:Ga:Zn =1:3:4 [atomic ratio], or a composition near that, In:Ga:Zn=4:2:3 [atomic ratio] [atomic ratio], or a composition near that, In:Ga:Zn=5:1:3 [atomic ratio], The composition in that vicinity, In:Ga:Zn=10:1:3 [atomic ratio], or the composition in that vicinity , Ga:Zn=2:1 [atomic ratio], or a composition near that, or Ga:Zn=2: 5 [atomic ratio] or a metal oxide with a composition close to that may be used. Also, oxide 23 A specific example of a layered structure for 0c is In:Ga:Zn=4:2:3 [atomic ratio]. ], or a composition in its vicinity, and In:Ga:Zn=1:3:4 [atomic ratio], or Layered structure with nearby compositions, In:Ga:Zn=4:2:3 [atomic ratio], or nearby compositions. Lamination with the composition of In:Ga:Zn=5:1:3 [atomic ratio], or a composition near that. Structure, composition Ga:Zn=2:1 [atomic ratio] or near that, and In:Ga:Zn= 4:2:3 [atomic ratio], or a layered structure with a composition near that ratio, Ga:Zn=2:5 [atomic ratio] The atom ratio, or a composition near that ratio, and In:Ga:Zn=4:2:3 [atomic ratio], It has a layered structure with the composition of its neighbors, gallium oxide, and In:Ga:Zn=4:2:3[atoms Examples include a numerical ratio, or a layered structure with compositions in the vicinity of that ratio. Note that nearby compositions refer to: Includes a range of ±30% of the desired atomic ratio.

[0057] Furthermore, it is preferable that the oxide 230b is crystalline. For example, CAAC, which will be described later. -OS(c-axis aligned crystalline oxide sem It is preferable to use an iconductor. Oxides have few impurities or defects (such as oxygen vacancies), are highly crystalline, and have a dense structure. Therefore, the oxygen is drawn from oxide 230b by the source electrode or drain electrode. This suppresses the extraction of acid from oxide 230b. As a result, even after heat treatment, the acid is not removed. Because it reduces the extraction of elements, the transistor 200 has a high manufacturing process. It is stable with respect to temperature (the so-called thermal budget).

[0058] Furthermore, the energy at the lower end of the conduction band of oxide 230a and oxide 230c is that of oxide 23 It is preferable that the energy is higher than the energy at the lower end of the conduction band at 0b. In other words, oxidation The electron affinity of material 230a and oxide 230c is smaller than the electron affinity of oxide 230b. It is preferable.

[0059] Here, the electron affinity or energy level Ec at the bottom of the conduction band is the same as the vacuum level and the valence band. The ionization potential Ip is the difference between the end energy Ev and the energy gap Eg. The ionization potential Ip can be determined, for example, by ultraviolet photoelectron spectroscopy. (UPS:Ultraviolet Photoelectron Spectrosc The energy gap Eg can be measured using a spectroscopic instrument. It can be measured using an ellipsometer.

[0060] Furthermore, at the joint of oxide 230a, oxide 230b, and oxide 230c, The energy levels at the lower end of the guide band change smoothly. In other words, oxide 230a, oxide The energy levels at the lower end of the conduction band at the junction of 230b and oxide 230c are continuous. It can also be said that it undergoes a gradual change or continuous bonding. In order to do this, oxide 2 At the interface between 30a and oxide 230b, and at the interface between oxide 230b and oxide 230c It is desirable to lower the defect level density of the mixed layer that is formed.

[0061] Furthermore, the primary carrier pathway is oxide 230b. Oxides 230a to 23 By configuring 0c as described above, the interface between oxide 230a and oxide 230b, and oxidation The defect level density at the interface between material 230b and oxide 230c can be reduced. Therefore, the influence of interfacial scattering on carrier conduction is reduced, and transistor 200 has high High on-current and high frequency characteristics can be obtained.

[0062] For oxide 230 (for example, oxide 230b), an oxide semiconductor with a low carrier concentration is used. It is preferable that they be present. When the carrier concentration of the oxide semiconductor is low, the oxide semiconductor The impurity concentration in the conductor can be reduced to lower the defect level density. A substance with a low concentration of pure matter and a low defect level density is called a high-purity intrinsic or substantially high-purity intrinsic substance. Examples of impurities in oxide semiconductors include hydrogen, nitrogen, alkali metals, and alkalis. Examples include earth metals, iron, nickel, and silicon.

[0063] In particular, the hydrogen contained in oxide semiconductors reacts with the oxygen bonded to the metal atoms to form water. Therefore, oxygen vacancies (V) in oxide semiconductors O Forms an oxygen vacancy (also known as an oxygen vacancy). In some cases, this can occur. Furthermore, a defect in which hydrogen is present in an oxygen vacancy (hereinafter referred to as V O It is sometimes referred to as H. ) can function as a donor, and electrons, which are carriers, can be generated. Also, hydrogen In some cases, it combines with oxygen atoms that bond with metal atoms, generating electrons, which act as carriers. Therefore, transistors using oxide semiconductors with a high hydrogen content are normally-on It is prone to becoming a characteristic. Also, hydrogen in oxide semiconductors moves due to stress such as heat and electric fields. Because it is prone to this, if oxide semiconductors contain a lot of hydrogen, the reliability of transistors deteriorates. There is a risk that this may happen.

[0064] V O H can function as a donor in oxide semiconductors. However, quantitatively determining the defect is difficult. It is difficult to evaluate this. Therefore, in oxide semiconductors, instead of donor concentration, In some cases, it is evaluated by carrier concentration. Therefore, in this specification, the parameters of oxide semiconductors are used. As the data, we use the carrier concentration assuming a state where no electric field is applied, rather than the donor concentration. In some cases, the "carrier concentration" described in this specification, etc., is equivalent to the "donor concentration." It may be possible to replace.

[0065] From the above, when an oxide semiconductor is used for the oxide 230, V in the oxide 230 O H can be made as low as possible and made highly pure intrinsic or substantially highly pure intrinsic. Thus, V O To obtain an oxide semiconductor with sufficiently reduced VH, impurities such as moisture and hydrogen in the oxide semiconductor should be removed (sometimes described as dehydration and dehydrogenation treatment), and oxygen should be supplied to the oxide semiconductor to fill oxygen vacancies (sometimes described as oxygen addition treatment). This is important. V O By using an oxide semiconductor with sufficiently reduced impurities such as VH in the channel formation region of a transistor, stable electrical characteristics can be imparted.

[0066] Also, when an oxide semiconductor is used for the oxide 230, the carrier concentration of the oxide semiconductor in the region that functions as the channel formation region is preferably 1×10 18 cm -3 or less, more preferably 1×10 17 cm -3 less than, even more preferably 1×10 16 cm -3 less than, even more preferably 1×10 13 cm -3 less than, and even more preferably 1×1 0 12 cm -3 less than. There is no particular limitation on the lower limit of the carrier concentration of the oxide semiconductor in the region that functions as the channel formation region, but for example, it can be 1×10 -9 cm -3 or less.

[0067] Furthermore, using a raw material gas that does not contain hydrogen atoms or has a low hydrogen atom content, Interlayer insulating film (insulator 216, insulator 274, insulator 280, etc.), and gate insulating film (insulator By forming a film of edge material 224, insulator 250, etc., the hydrogen concentration contained in these insulating films is reduced. To reduce this, efforts may be made to reduce the amount of hydrogen mixed into the channel formation region of the oxide semiconductor.

[0068] In the deposition of the above insulating film, the deposition gas mainly consists of a gas containing molecules with silicon atoms. It is used. In order to reduce the hydrogen contained in the above insulating film, the molecule containing the silicon atom is used. It is preferable that the amount of hydrogen atoms contained is small, and the molecule containing the silicon atom contains hydrogen atoms. It is more preferable not to do so. Of course, this also applies to film deposition using gases other than those containing silicon atoms. For gases, it is preferable that they contain few hydrogen atoms, and even more preferable that they contain no hydrogen atoms at all. It seems so.

[0069] The above-mentioned molecules containing silicon atoms are Si x -R y To express it as, for example, let the functional group R be isocyanate group (-N=C=O), cyanate group (-OC≡N), cyano group (- C≡N), diazo group (=N2), azide group (-N3), nitroso group (-NO), and ni At least one troll group (-NO2) can be used. For example, 1 ≤ x ≤ 3, 1 ≤ We can set y≦8. Examples of molecules containing silicon atoms in this way include tetrai. Socyanate silane, tetracyanate silane, tetracyanosilane, hexasocyanate Tosilane, octaisocyanate tosilane, etc. can be used. Here, silicon While examples of molecules in which the same type of functional group is bonded to an atom have been given, this embodiment is not limited to these examples. No. A configuration in which different types of functional groups are bonded to silicon atoms is also possible.

[0070] Furthermore, for example, a configuration using a halogen (Cl, Br, I, or F) as the functional group R. This is also acceptable. For example, 1 ≤ x ≤ 2 and 1 ≤ y ≤ 6. Such a silicon atom Examples of molecules containing this include tetrachlorosilane (SiCl4) and hexachlorodisila. (Si2Cl6), etc., can be used. Although an example using chlorine as a functional group is shown, other than chlorine can also be used. Other halogens such as bromine, iodine, and fluorine may be used as functional groups. Also, silicon... A configuration in which different types of halogens are bonded to an atom is also possible.

[0071] The composition of insulators 216, 274, 280, 224, and 250 The film was grown using chemical vapor deposition (CV) with a gas containing silicon atoms as described above. This can be done using the D: Chemical Vapor Deposition method. The VD method has a relatively fast film deposition rate, making it suitable for thick insulators 280 and 274, and This is suitable for forming a film of the insulator 216.

[0072] As a CVD method, plasma CVD (PECVD) is used. Thermal CVD (TCVD), which utilizes heat. It is preferable to use the CVD method. When using the thermal CVD method, the film deposition is carried out under atmospheric pressure. Now, atmospheric pressure CVD (APCVD) method Alternatively, vacuum CVD (Low Pressure Vapor Deposition) can be used, or film deposition can be carried out under reduced pressure (low pressure CVD: Low Pressure Vapor Deposition). The pressure CVD method may also be used.

[0073] Using the CVD method, insulators 216, 274, 280, 224, and When forming the insulator 250, it is preferable to use an oxidizing agent. Suitable oxidizing agents include O2. Water, including O3, NO, NO2, N2O, N2O3, N2O4, N2O5, CO, CO2, etc. It is preferable to use a gas that does not contain elementary atoms.

[0074] Also, insulators 216, 274, 280, 224, and 25 The film deposition of 0 was performed by the ALD (Atomic Layer Deposition) method. It is also acceptable. In the ALD method, the first raw material gas for the reaction (hereinafter referred to as the precursor) is used. The main body, also called a metal precursor, and the second raw material gas (hereinafter referred to as the reactant) It is called a reagent or nonmetallic precursor.) These are alternately introduced into the chamber. Then, the film is formed by repeatedly introducing these raw material gases.

[0075] The ALD method deposits films by switching the source gas, thus utilizing the self-regulating properties of atoms. This method allows for the deposition of atoms layer by layer. Therefore, ALD is suitable for the deposition of extremely thin films. , film deposition on structures with high aspect ratio, film deposition with few defects such as pinholes, and coverage Excellent film deposition is possible. For this reason, the ALD method uses an insulator 250 and an insulating film. This is suitable for forming a film on the edge body 224.

[0076] In the ALD method, the reaction of the precursor and reactant is carried out using only thermal energy. The LD (Thermal ALD) method may be used, or plasma-excited reactants may be used. The PEALD (Plasma Enhanced ALD) method, which uses [specific technology / method], may also be used.

[0077] When using the ALD method, the precursor is a gas containing the silicon atom mentioned above. The above oxidizing agent can be used as the reactant. This will provide insulation to the insulator 216. The amount of hydrogen incorporated into body 274, insulator 280, insulator 224, and insulator 250 This can be significantly reduced.

[0078] Note that the above example shows a molecule containing silicon atoms but not hydrogen atoms. This embodiment is not limited to this. In the above-mentioned molecule containing silicon atoms, The configuration may also be such that some of the functional groups bonded to the silicon atom are replaced by hydrogen atoms. The amount of hydrogen atoms in the silicon-containing molecules mentioned above is less than that in silane (SiH4). Preferably, the above-mentioned molecule containing silicon atoms contains three silicon atoms per silicon atom. It is preferable to have hydrogen atoms of child or smaller. Furthermore, it is preferable to have a molecule containing the above-mentioned silicon atoms. It is more preferable that the gas has 3 or fewer hydrogen atoms per silicon atom.

[0079] As described above, in a film deposition method using a gas from which hydrogen atoms have been reduced or removed, the insulator 21 6. At least one of insulators 274, 280, 224, and 250 By forming these films, the amount of hydrogen contained in these insulating films can be reduced.

[0080] Furthermore, as shown in Figures 1(B), (C), and (D), transistor 200 is connected to insulator 282 and The structure is such that the insulator 250 is in direct contact with the other element. The oxygen contained in body 280 is less likely to be absorbed by the conductor 260. Therefore, the insulator 280 The oxygen contained is efficiently converted to oxides 230a and 230b via oxide 230c. Since it can be supplied well, oxygen deficiencies in oxide 230a and oxide 230b can be eliminated. This can reduce the noise and improve the electrical characteristics and reliability of transistor 200. Furthermore, The ability to prevent impurities such as hydrogen contained in the insulator 280 from mixing into the insulator 250 is Therefore, it is possible to further reduce the hydrogen concentration of the insulator 250 and oxide 230. Therefore, adverse effects on the electrical characteristics and reliability of transistor 200 can be suppressed. It can be done. As for insulator 282, silicon nitride, silicon oxide nitride, aluminum oxide, Alternatively, hafnium oxide can be used.

[0081] [Capacitive element 100] As shown in Figure 1(B), the capacitive element 100 is an insulator 216 on an insulator 214 and an insulator Conductors 204 (conductors 204a and 2) are arranged to be embedded in 216. 04b) and the insulator 222 on the insulator 216 and the conductor 205, and on the insulator 222 It has a conductor 242a.

[0082] In the capacitive element 100, the conductor 204 functions as one electrode of the capacitive element 100. The conductor 242a functions as the other electrode of the capacitive element 100. Also, the insulator 222 It functions as a dielectric for the capacitive element 100. Conductor 204 is made of the same material as conductor 205. Use this.

[0083] The conductor 204 is formed in the same layer as the conductor 205 of the transistor 200. The electrode 242a serves as either the source or drain electrode of transistor 200. Also, Insulator 222 also serves as the gate insulator for transistor 200. In this way, the transistor By making some of the components of the 200 and the capacitive element 100 common, The manufacturing process for a semiconductor device having an inverter 200 and a capacitive element 100 is simplified. Therefore, it is desirable because it can be expected to reduce manufacturing costs and improve yield.

[0084] Based on the above, fluctuations in electrical characteristics are suppressed, resulting in stable electrical characteristics and improved reliability. A semiconductor device can be provided that has the above characteristics. Alternatively, one that has normally-off electrical characteristics. A semiconductor device can be provided that has a transistor with a large on-current. A semiconductor device can be provided. Or, a transistor having high frequency characteristics can be provided. A semiconductor device can be provided that has a transistor with a small off-current. We can provide semiconductor devices.

[0085] Hereinafter, a semiconductor having a transistor 200 and a capacitive element 100 according to one aspect of the present invention will be described. The detailed configuration of the conductor device will be described below.

[0086] The conductor 205 is arranged to overlap with the oxide 230 and the conductor 260. Preferably, the conductor 205 is embedded in the insulator 216.

[0087] Here, when the conductor 260 functions as the first gate (also called the top gate) Furthermore, conductor 205 functions as a second gate (also called a bottom gate). There are cases where this is the case. In that case, the potential applied to the conductor 205 is the same as the potential applied to the conductor 260. By changing it independently without linking it, the Vth of transistor 200 can be controlled. This can be done. In particular, by applying a negative potential to the conductor 205, the transistor 200 By making Vth greater than 0V, it becomes possible to reduce the off-current. Therefore, conductor Applying a negative potential to 205 results in a higher rate of electricity being applied to the conductor 260 compared to not applying a negative potential. The drain current can be reduced when the voltage is 0V.

[0088] Furthermore, as shown in Figure 1(A), the conductor 205 is made of the conductor 242a of oxide 230 and It is preferable to provide a region larger than the area that does not overlap with the conductor 242b. In particular, Figure 1( As shown in C), the conductor 205 has channel widths of oxide 230a and oxide 230b It is preferable that the material is stretched even in the region outside the end of the direction. In other words, oxide Outside the channel widthwise ends of 230a and oxide 230b, the conductor 205 and Preferably, the conductor 260 is superimposed on the insulator. Alternatively, the conductor 20 By making 5 larger, the plasma-based processing in the manufacturing process after the formation of the conductor 205 can be performed. In theory, it is sometimes possible to mitigate localized charging (called charge-up). However, one aspect of the present invention is not limited thereto. Conductor 205 is at least conductor 2 The oxide 230 located between 42a and the conductor 242b should be superimposed.

[0089] As shown in Figures 1(A) and (B), the conductor 204 is at least the conductor 242a It is preferable that the oxide 230a and oxide 230b have regions that do not overlap and regions that overlap with them. It seems so.

[0090] Furthermore, as shown in Figure 1(C), the oxide 230a is used with reference to the bottom surface of the insulator 224. The bottom surface of the conductor 260 in the region where the oxide 230b and the conductor 260 do not overlap. The height of the region has a region located at a lower position than the height of the bottom surface of oxide 230b. This is preferable. Also, the height of the bottom surface of the conductor 260 in that region and the bottom of the oxide 230b The difference between the surface height and the surface thickness is 0 nm to 100 nm, preferably 3 nm to 50 nm. More preferably, the wavelength should be between 5 nm and 20 nm.

[0091] Thus, the conductor 260, which functions as a gate, is the oxide 230 in the channel formation region. The sides and top surface of b are covered with oxide 230c and insulator 250. This makes it easier to apply the electric field of the conductor 260 to the entire oxide 230b in the channel formation region. Therefore, the on-current of transistor 200 can be increased, improving the frequency characteristics. In this specification, the electric fields of the first gate and the second gate create a channel shape. The structure of a transistor that electrically surrounds a region is called a surrounded channel. This is called an l(S-channel) structure.

[0092] Furthermore, the conductive material 205a suppresses the permeation of impurities such as water or hydrogen and oxygen. A body material is preferred. For example, titanium, titanium nitride, tantalum, or tantalum nitride can be used. This is possible. Also, the conductor 205b is mainly composed of tungsten, copper, or aluminum. It is preferable to use a conductive material such as the above. Note that although the conductive material 205 is shown as two layers, 3 A multilayer structure with more than one layer is also acceptable.

[0093] Here, an oxide semiconductor, an insulator or conductor located beneath the oxide semiconductor, and an acid A different film is used to separate an insulator or conductor located on the upper layer of a semiconductor without opening it to the atmosphere. By continuously depositing seeds into a film, the concentration of impurities (especially hydrogen and water) is reduced, resulting in a substantially high-purity product. This is preferable because it allows for the formation of highly intrinsic oxide semiconductor films.

[0094] Insulator 214, Insulator 222, Insulator 272, Insulator 273, Insulator 282, Insulator 2 83, and at least one of the insulators 284, are such that impurities such as water or hydrogen can be present on the substrate side. Alternatively, as a barrier insulating film to suppress contamination of transistor 200 from above, It is preferable that it be able to do so. Therefore, insulator 214, insulator 222, insulator 272, insulation At least one of body 273, insulator 282, insulator 283, and insulator 284 is hydrogen Atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules (N2O, NO, NO2) (i) It has the function of suppressing the diffusion of impurities such as copper atoms (the above impurities are less likely to permeate). It is preferable to use an insulating material. Alternatively, oxygen (for example, oxygen atoms, oxygen molecules, etc.) An insulating material having the function of suppressing the diffusion of at least one of the above oxygens (i.e., an insulating material that is impermeable to oxygen) It is preferable to use it.

[0095] For example, silicon nitride or silicon nitride oxide may be used as insulators 283 and 284. Using a capacitor, etc., insulators 214, 222, 272, 273, and It is preferable to use aluminum oxide or hafnium oxide as the edge 282. This prevents impurities such as water or hydrogen from transients from the substrate side through the insulator 214. This can suppress diffusion towards the sta 200 side. Alternatively, it can be contained in the insulator 224, etc. This can suppress the diffusion of oxygen to the substrate side through the insulator 214. Impurities such as water or hydrogen are above the insulator 272, insulator 273, insulator 282, and insulator 280 disposed above 283, and insulator 274, etc., can be suppressed from diffusing toward the transistor 200 side.

[0096] Also, in some cases, it is preferable to lower the resistivity of the insulator 284. For example, by setting the resistivity of the insulator 2 84 to approximately 1×10 13 Ωcm, in the process using plasma or the like after the formation of the insulator 28 4, the insulator 284 can relax the charge-up of the conductor 204, conductor 205, conductor 242, conductor 260, or conductor 246. The resistivity of the insulator 284 is preferably 1×10 Ωcm or more 10 1×10 Ωcm or less. 15

[0097] Also, the insulators 216, 280, and 274 preferably have a lower dielectric constant than the insulator 214. By using a material with a low dielectric constant as the interlayer film, the parasitic capacitance generated between the wirings can be reduced. For example, as the insulators 216, 280, and 27 4, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide with fluorine added, silicon oxide with carbon added, silicon oxide with carbon and nitrogen added, or silicon oxide having pores can be appropriately used.

[0098] The insulators 222 and 224 have the function as a gate insulator.

[0099] Here, the insulator 224 in contact with the oxide 230 preferably desorbs oxygen by heating. ​​​​​​In this specification, oxygen released by heating may be referred to as excess oxygen. For example, The edge body 224 may be made of silicon oxide or silicon oxide nitride, etc., as appropriate. By providing an insulating material in contact with the oxide 230, oxygen deficiency in the oxide 230 is reduced. This can improve the reliability of transistor 200.

[0100] Specifically, as the insulator 224, an oxide material is used from which some oxygen is desorbed by heating. It is preferable to do so. Oxides that desorb oxygen upon heating are defined as those analyzed by thermal desorption gas analysis (TDS( In thermal desorption spectroscopy analysis, oxygen The amount of molecular elimination is 1.0 × 10⁻⁶ 18 molecular / cm² 3 The above is preferably 1.0 × 10 19 molecular / cm² 3 More preferably 2.0 × 10 19 mole cules / cm 3 Above, or 3.0 × 10 20 molecular / cm² 3 That's all. It is an oxide film. The surface temperature of the film during the above TDS analysis was 100°C or higher. A temperature of 700°C or less, or a range of 100°C to 400°C, is preferred.

[0101] Insulator 222 prevents impurities such as water or hydrogen from entering the transistor 200 from the substrate side. It is preferable that it functions as a barrier insulating film that suppresses this. For example, insulator 222 is It is preferable that the hydrogen permeability is lower than that of insulator 224. Insulator 222 and insulator 28 By surrounding the insulator 224 and oxide 230, etc., water or This can prevent impurities such as hydrogen from entering transistor 200.

[0102] Furthermore, the insulator 222 contains oxygen (for example, at least one such as an oxygen atom or oxygen molecule). It is preferable that the material has a function to suppress diffusion (i.e., the oxygen does not easily permeate it). For example, insulation It is preferable that body 222 has lower oxygen permeability than insulator 224. By having the function of suppressing the diffusion of impurities, the oxygen contained in oxide 230 becomes insulator 2 This is preferable because it reduces diffusion below 22. Also, the conductor 205 is an insulator. This can suppress the reaction of body 224 with oxygen present in oxide 230.

[0103] The insulator 222 is made of either or both aluminum and hafnium, which are insulating materials. It is preferable to use an insulator containing an oxide. Aluminum and / or hafnium. Insulators containing oxides include aluminum oxide, hafnium oxide, aluminum and ha It is preferable to use an oxide containing hafnium (such as hafnium aluminate). When an insulator 222 is formed using the same material, the insulator 222 is acid from the oxide 230. The emission of elemental particles and the introduction of impurities such as hydrogen from the peripheral area of ​​transistor 200 into oxide 230. It functions as an inhibitory layer.

[0104] Alternatively, these insulators may be, for example, aluminum oxide, bismuth oxide, germanium oxide. Umium, niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, Zirconium oxide may be added. Alternatively, these insulators may be subjected to nitriding treatment. Silicon oxide, silicon oxide nitride, or silicon nitride may be laminated as the insulator. .

[0105] Also, the insulator 222 may be a so-called high-k material such as aluminum oxide, hafnium oxide, tantalum oxide, zirconium oxide, lead zirconate titanate (PZT), strontium titanate (SrTiO3) or (Ba,Sr)TiO3 (BST), etc., and may be used as a single layer or a laminate. For example, when the insulator 222 is a laminate, a three-layer laminate formed by zirconium oxide, aluminum oxide, and zirconium oxide in this order, or a four-layer laminate formed by zirconium oxide, aluminum oxide, zirconium oxide, and aluminum oxide in this order, etc. may be used. Also, as the insulator 222, a compound containing hafnium and zirconium, etc. may be used. As the semiconductor device is miniaturized and highly integrated, problems such as leakage current of transistors and capacitor elements may occur due to thinning of the gate insulator and the dielectric used for the capacitor element. By using a high-k material for the gate insulator and the insulator functioning as the dielectric used for the capacitor element, it is possible to reduce the gate potential during transistor operation and secure the capacitance of the capacitor element while maintaining the physical film thickness. Also, the insulator 222 and the insulator 224 may have a laminated structure of two or more layers. In that case, it is not limited to a laminated structure made of the same material, and a laminated structure made of different materials may also be used. In addition, between the oxide 230b and the conductor 242 (the conductor 242a and the conductor 242b) functioning as the source electrode or the drain electrode, an oxide 243 (the oxide 243a and so on) When the semiconductor device is miniaturized and highly integrated, problems such as leakage current of transistors and capacitor elements may occur due to thinning of the gate insulator and the dielectric used for the capacitor element. By using a high-k material for the gate insulator and the insulator functioning as the dielectric used for the capacitor element, it is possible to reduce the gate potential during transistor operation and secure the capacitance of the capacitor element while maintaining the physical film thickness. Moreover, by using a high-k material for the insulator 222 and the insulator that functions as the dielectric for the capacitor element, it is possible to reduce the gate potential during transistor operation and secure the capacitance of the capacitor element while maintaining the physical film thickness. Furthermore, the insulator 222 and the insulator may have a multi-layer structure of two or more layers. In this case, it is not limited to a multi-layer structure composed of the same material, and a multi-layer structure composed of different materials may also be

[0106] used. In that case, it is not limited to a laminated structure made of the same material, and a laminated structure made of different materials may also be used.

[0107] Also, between the oxide 230b and the conductor 242 (the conductor 242a and the conductor 242b) that functions as the source electrode or the drain electrode, an oxide 243 (the oxide 243a and (the conductor 242a and the conductor 242b), an oxide 243 (the oxide 243a and A configuration in which the conductor 242 and the oxide 230 do not come into contact is also possible. Therefore, the conductor 242 can suppress the absorption of oxygen from the oxide 230. By preventing oxidation of the conductor 242, the decrease in the conductivity of the conductor 242 can be suppressed. Yes, it is possible. Therefore, it is preferable that oxide 243 has the function of suppressing the oxidation of conductor 242. It seems so.

[0108] Therefore, it is preferable that oxide 243 has the function of suppressing oxygen permeation. Oxygen permeability between the conductor 242, which functions as an electrode or drain electrode, and the oxide 230b. By arranging oxide 243 which has a suppressive function, the conductor 242 and oxide 230b This is preferable because the electrical resistance between them is reduced. This can improve the electrical characteristics of transistor 200 and the reliability of transistor 200.

[0109] As oxide 243, a metal oxide containing element M may be used. In particular, element M is A Luminium, gallium, yttrium, or tin may be used. Oxide 243 is an oxide. It is preferable that the concentration of element M is higher than that of substance 230b. Also, as oxide 243, Gallium may be used. Alternatively, metal acids such as In-M-Zn oxide may be used as oxide 243. A compound may also be used. Specifically, in the metal oxide used in oxide 243, with respect to In The atomic ratio of element M in oxide 230b is the element relative to In in the metal oxide used in oxide 230b. It is preferable that the atomic ratio is greater than that of element M. Also, the film thickness of oxide 243 is 0.5 nm or less. Preferably, the wavelength is 5 nm or less, and more preferably 1 nm to 3 nm. Also, oxide It is preferable that 243 is crystalline. If oxide 243 is crystalline, oxide 23 The release of oxygen in 0 can be effectively suppressed. For example, as oxide 243, hexagonal In the case of crystalline structures such as crystals, it may be possible to suppress the release of oxygen from oxide 230.

[0110] Note that oxide 243 does not necessarily have to be provided. In that case, conductor 242 (conductor 2 When 42a and the conductor 242b) come into contact with the oxide 230, the acid in the oxide 230 The element may diffuse into the conductor 242, causing the conductor 242 to oxidize. This makes it highly probable that the conductivity of conductor 242 will decrease. The diffusion of oxygen into the conductor 242 occurs when the conductor 242 absorbs oxygen from the oxide 230. It can be rephrased.

[0111] Furthermore, oxygen in oxide 230 is present in conductor 242 (conductor 242a and conductor 242b) By diffusing into ), the conductor 242a and oxide 230b, and the conductor 242b A different layer may be formed between the conductor 242 and the oxide 230b. Since it also contains a large amount of oxygen, it is presumed that this different layer has insulating properties. At this time, conductor 24 The three-layer structure of 2, the said heterogeneous layer, and oxide 230b consists of three layers: metal-insulator-semiconductor. It can be considered a structure, and MIS (Metal-Insulator-Semicond It is sometimes called a uctor structure, or a diode junction structure mainly consisting of an MIS structure. be.

[0112] Furthermore, the above-mentioned heterogeneous layer is not limited to being formed between the conductor 242 and the oxide 230b. For example, when a different layer is formed between the conductor 242 and the oxide 230c, or when the conductor 2 Formed between 42 and oxide 230b, and between conductor 242 and oxide 230c There are cases where this is the case.

[0113] On the oxide 243, there is a conductor 242 that functions as a source electrode and a drain electrode. Conductors 242a and 242b are provided. The thickness of the conductor 242 is, for example, The wavelength should be between 1 nm and 50 nm, preferably between 2 nm and 25 nm.

[0114] Examples of conductive materials 242 include aluminum, chromium, copper, silver, gold, platinum, tantalum, and nickel. Titanium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, Magnesium, zirconium, beryllium, indium, ruthenium, iridium, strontium Metal elements selected from rontium and lanthanum, or alloys containing the aforementioned metal elements. Alternatively, it is preferable to use an alloy or the like that which combines the above-mentioned metal elements. For example, tan nitride Tal, titanium nitride, tungsten, nitrides containing titanium and aluminum, tantalum and aluminum Nitrides containing ruthenium, ruthenium oxide, ruthenium nitride, strontium and ruthenium It is preferable to use oxides containing nitrile, oxides containing lanthanum and nickel, etc. Tantalum oxide, titanium nitride, titanium and aluminum nitrides, tantalum and aluminum Nitrides containing ruthenium oxide, ruthenium nitride, strontium and ruthenium-containing acids Oxides containing lanthanum and nickel are conductive materials that are resistant to oxidation, or that absorb oxygen. It is preferable because it is a material that maintains its conductivity even after storage.

[0115] The insulator 272 is provided in contact with the upper surface of the conductor 242 and functions as a barrier layer. This is preferable. With this configuration, the conductor 242 provides a barrier to the insulating material 280. The absorption of excess oxygen can be suppressed. Also, by suppressing the oxidation of the conductor 242, This can suppress the increase in contact resistance between the transistor 200 and the wiring. This can provide the Rangista 200 with excellent electrical characteristics and reliability.

[0116] Therefore, it is preferable that the insulator 272 has a function of suppressing the diffusion of oxygen. It is preferable that the insulator 272 has a function that suppresses oxygen diffusion more than the insulator 280. i. As the insulator 272, for example, one or both of aluminum and hafnium It is preferable to form an insulating film containing an oxide. For example, aluminum nitride can be used as the insulating film 272. An insulator containing titanium should be used.

[0117] As shown in Figure 1(D), the insulator 272 is located on the upper surface of the conductor 242a and the conductor 24 It is in contact with the side surface of 2a. Also, although not shown in the figure, the insulator 272 is on the upper surface of the conductor 242b. It is in contact with the side surface of the conductor 242b. Also, an insulator 273 is placed on the insulator 272. In this way, for example, the oxygen added to the insulator 280 is absorbed by the conductor 242. Absorption can be suppressed.

[0118] The insulator 250 functions as a gate insulator. The insulator 250 is placed on the oxide 230c. It is preferable that they be placed in contact with each other. The insulator 250 is silicon oxide, silicon oxide nitride, and nitrogen Silicon oxide, silicon nitride, silicon oxide with added fluorine, silicon oxide with added carbon By using silicon oxide, which is doped with carbon and nitrogen, and silicon oxide with vacancies, This is possible. In particular, silicon oxide and silicon oxide-nitride are preferred because they are stable to heat. It seems so.

[0119] Similar to insulator 224, insulator 250 uses an insulator that releases oxygen upon heating. It is preferable to form an insulator that releases oxygen upon heating, as insulator 250. By being placed in contact with oxide 230c, it has an effect on the channel formation region of oxide 230b. It can supply oxygen effectively. Also, similar to the insulator 224, the water in the insulator 250 Alternatively, it is preferable that the concentration of impurities such as hydrogen is reduced. The film thickness of the insulator 250 is 1 It is preferable that the wavelength be between 20 nm and 30 nm.

[0120] Furthermore, a metal oxide may be provided between the insulator 250 and the conductor 260. It is preferable to suppress oxygen diffusion from the insulator 250 to the conductor 260. By providing a metal oxide that suppresses diffusion, the diffusion of oxygen from the insulator 250 to the conductor 260 is suppressed. This is suppressed. In other words, the decrease in the amount of oxygen supplied to oxide 230 can be suppressed. Furthermore, the oxidation of the conductor 260 by oxygen in the insulator 250 can be suppressed.

[0121] Furthermore, the metal oxide may function as part of the gate insulator. Therefore, when silicon oxide or silicon oxide nitride is used for the insulator 250, the metal acid For the oxide, it is preferable to use a metal oxide, which is a high-k material with a high dielectric constant. The insulator is made of a laminated structure of insulator 250 and the metal oxide, making it safe against heat. A laminated structure with constant dielectric constant and high relative permittivity can be achieved. Therefore, the physical properties of the gate insulator This makes it possible to reduce the gate potential applied during transistor operation while maintaining the film thickness. Furthermore, it becomes possible to thin the equivalent oxide film thickness (EOT) of the insulator that functions as a gate insulator. ru.

[0122] Specifically, hafnium, aluminum, gallium, yttrium, zirconium, t Magnesium, titanium, tantalum, nickel, germanium, or magnesium, etc. A metal oxide containing one or more selected types can be used. In particular, A An insulator containing an oxide of either luminium or hafnium, or both. Aluminum, hafnium oxide, aluminum and hafnium oxides (hafnium oxide) It is preferable to use materials such as luminescent coatings.

[0123] Alternatively, the metal oxide may function as part of the gate. It is preferable to provide an oxygen-containing conductive material on the channel-forming region side. By providing this on the channel-forming region side, oxygen released from the conductive material can form channels. It will become easier to supply the region.

[0124] In particular, it is contained in the metal oxide in which the channel is formed, as a conductor that functions as a gate. It is preferable to use a conductive material containing a metal element and oxygen. Conductive materials containing elements and nitrogen may be used. In addition, indium tin oxide and tung oxide may be used. Indium oxide containing tungsten, indium zinc oxide containing tungsten oxide, and tungsten oxide. Indium oxide containing tungsten, indium tin oxide containing titanium oxide, indium zinc oxide Indium tin oxide with added silicon may also be used. Um gallium zinc oxide may also be used. By using such a material, the channel shape In some cases, hydrogen contained in the metal oxide that is formed can be captured. Alternatively, the outside In some cases, it is possible to capture hydrogen that has been introduced from insulators and other materials.

[0125] Although the conductor 260 is shown as a two-layer structure in Figure 1, it may also be a single-layer structure or a three-layer structure or more. The above layered structure is also acceptable.

[0126] Conductor 260a contains hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxide molecules. Conductive material (such as N2O, NO, NO2, etc.) has the function of suppressing the diffusion of impurities such as copper atoms. It is preferable to use a material with low oxygen content. Alternatively, a small amount of oxygen (for example, oxygen atoms, oxygen molecules, etc.) It is preferable to use a conductive material that has the function of suppressing the diffusion of at least (1).

[0127] Furthermore, because the conductor 260a has the function of suppressing oxygen diffusion, the insulator 250 The oxygen contained in the material suppresses the oxidation of the conductor 260b, which reduces its conductivity. Yes, it is possible. Examples of conductive materials that have the function of suppressing oxygen diffusion include tantalum and nitrogen. It is preferable to use tantalum oxide, ruthenium oxide, or similar materials.

[0128] Furthermore, the conductor 260b is a conductive material mainly composed of tungsten, copper, or aluminum. It is preferable to use a conductive material. Also, since the conductor 260 also functions as wiring, It is preferable to use a highly conductive material. For example, tungsten, copper, or aluminum. A conductive material mainly composed of um can be used. In addition, the conductor 260b has a laminated structure. This may also be done as a laminated structure of titanium or titanium nitride and the above-mentioned conductive material. stomach.

[0129] Insulator 280 may be, for example, silicon oxide, silicon oxide nitride, or nitrogen. Silicon oxide, fluorine-added silicon oxide, carbon-added silicon oxide, carbon The material may include silicon oxide with added nitrogen, or silicon oxide with voids. Preferred. In particular, silicon oxide and silicon oxide nitride are preferred because they are thermally stable. In particular, materials such as silicon oxide, silicon oxide-nitride, and silicon oxide with vacancies are This is preferable because it allows for the easy formation of regions containing oxygen that is released by heating. The insulator 280 may also be a structure in which the above materials are laminated, for example, by sputtering. The product of the film-formed silicon oxide and the silicon oxide nitride film deposited on top of it by CVD. A layered structure would be appropriate. Alternatively, silicon nitride could be laminated on top of that.

[0130] It is preferable that the concentration of impurities such as water or hydrogen in the insulator 280 is reduced. Furthermore, the upper surface of the insulator 280 may be flattened.

[0131] Insulators 282 and 283 are insulated from above by impurities such as water or hydrogen. It is preferable that it functions as a barrier insulating film to suppress mixing with 80. Also, as an insulator 282 and insulator 283 function as barrier insulating films that suppress oxygen permeation. Preferred. Examples of insulators 282 and 283 include aluminum oxide, nitride, etc. An insulator such as silicon or silicon nitride can be used. For example, insulator 282 As such, aluminum oxide, which has high barrier properties against oxygen, is used, and as the insulator 283, water A silicon nitride or silicon nitride oxide, which has high barrier properties against the element, should be used.

[0132] Furthermore, it is preferable to provide an insulator 274 that functions as an interlayer film on top of the insulator 283. i. Insulator 274, like insulator 224, has an impurity concentration of water or hydrogen in the film. It is preferable that this is reduced.

[0133] Conductor 240 is a conductive material mainly composed of tungsten, copper, or aluminum. It is preferable to use it. Furthermore, the conductor 240 may have a laminated structure. (See Figure 1(A)) The conductor 240 is shown as circular in a top view, but is not limited to this. For example, the conductor 240 may have a roughly circular shape such as an ellipse or a polygonal shape such as a quadrilateral when viewed from above. The shape may also be one in which the corners of a polygon, such as a quadrilateral, are rounded.

[0134] Furthermore, when the conductor 240 is made into a laminated structure, impurities such as water or hydrogen, and oxygen It is preferable to use a conductive material that has a function to suppress transmission. For example, tantalum, nitrogen Use tantalum oxide, titanium, titanium nitride, ruthenium, or ruthenium oxide. It is preferable that it has the function of suppressing the permeation of impurities such as water or hydrogen, and oxygen. The conductive material may be used in a single layer or in a laminated form. By using this conductive material, insulation Impurities such as water or hydrogen diffusing from body 280, etc., pass through conductor 240 to oxide 2 The amount of oxygen added to 30 can be further reduced. This prevents the conductor 240 from absorbing it.

[0135] Examples of insulators 241 include silicon nitride, aluminum oxide, or silicon nitride oxide. An insulator such as Ricon can be used. Insulator 241 is insulator 283, insulator 282, Since it is provided in contact with the edge 280, the insulator 273, and the insulator 272, the insulator 280 Impurities such as water or hydrogen enter the oxide 230 through the conductor 240. This can suppress hydrogen. In particular, silicon nitride has high blocking properties for hydrogen. It is preferable. Furthermore, it prevents the oxygen contained in the insulator 280 from being absorbed by the conductor 240. It is possible.

[0136] Alternatively, a conductor 246 that functions as wiring may be placed in contact with the upper surface of the conductor 240. Conductor 246 is a conductive material mainly composed of tungsten, copper, or aluminum. It is preferable to use it. Furthermore, the conductor may also have a laminated structure, for example, titanium or This may be a laminate of titanium nitride and the above conductive material. It may be formed to be embedded in the cut-out opening.

[0137] Furthermore, an insulator 284 may be formed on the conductor 246 and on the insulator 283. By using such a configuration, the conductor 246 can be wrapped in the insulators 283 and 284. This suppresses the oxidation of the conductor 246, and also prevents impurities such as hydrogen from passing through the conductor 246. This can suppress diffusion to transistor 200. As for the insulator 284, For example, using an insulator such as silicon nitride, aluminum oxide, or silicon nitride oxide. This is sufficient. Alternatively, an insulator 274 may be formed on the insulator 284. An insulator similar to that of insulator 280 can be used.

[0138] <Component materials for semiconductor devices> The following describes the constituent materials that can be used in semiconductor devices.

[0139] <Circuit board> Examples of substrates for forming the transistor 200 include an insulating substrate, a semiconductor substrate, and A conductive substrate can be used. Examples of insulating substrates include glass substrates, quartz substrates, and Fire substrate, stabilized zirconia substrate (such as yttria-stabilized zirconia substrate), resin substrate There are plates and the like. Also, semiconductor substrates are made of materials such as silicon and germanium. Semiconductor substrates, or silicon carbide, silicon germanium, gallium arsenide, phosphate Examples include compound semiconductor substrates composed of zinc, zinc oxide, and gallium oxide. Furthermore, as mentioned above... A semiconductor substrate having an insulating region inside the semiconductor substrate, for example, SOI (Silicon Examples include on-insulator substrates. Conductive substrates include graphite substrates and metal substrates. These include alloy substrates, conductive resin substrates, etc. Alternatively, substrates containing metal nitrides, metal acids There are substrates containing monoxides, etc. Furthermore, there are substrates on which a conductor or semiconductor is provided on an insulating substrate. A substrate, a semiconductor substrate provided with a conductor or insulator, a conductive substrate provided with a semiconductor or insulator There are substrates with edges provided. Alternatively, substrates on which elements are provided can be used. This may also be done. The elements provided on the substrate may include capacitive elements, resistive elements, switching elements, and light-emitting elements. These include children, memory elements, etc.

[0140] <insulator> Insulators include insulating oxides, nitrides, oxidized nitrides, nitride oxides, and metal oxides. Examples include metal oxides, metal nitrides, and metal nitride oxides.

[0141] For example, as transistors become smaller and more integrated, the gate insulator can be made thinner. This can lead to problems such as leakage current. By using high-k materials, the physical film thickness is maintained while lowering the voltage during transistor operation. This becomes possible. On the other hand, for the insulator that functions as an interlayer film, a material with a low dielectric constant is used. This reduces parasitic capacitance between wires. Therefore, it is possible to reduce the parasitic capacitance that occurs between wires. Then, you should select the materials.

[0142] Furthermore, insulators with high dielectric constants include gallium oxide, hafnium oxide, and zirconium oxide. Oxides containing aluminum, aluminum, and hafnium, aluminum and hafnium Oxidized nitrides, silicon and hafnium oxides, silicon and hafnium Examples include oxide nitrides containing um, or nitrides containing silicon and hafnium.

[0143] Furthermore, examples of insulators with low dielectric constant include silicon oxide, silicon oxide nitride, and silicon nitride oxide. Silicon oxide with added fluorine, silicon oxide with added carbon, carbon and nitrogen Examples include silicon oxide with added material, silicon oxide with voids, or resins.

[0144] Furthermore, transistors using oxide semiconductors suppress the permeation of impurities such as hydrogen and oxygen. By surrounding the transistor with an insulator that has a controlling function, the electrical characteristics of the transistor are stabilized. This is possible. As an insulator that has the function of suppressing the permeation of impurities such as hydrogen and oxygen, For example, boron, carbon, nitrogen, oxygen, fluorine, magnesium, aluminum, silicon Phosphorus, chlorine, argon, gallium, germanium, yttrium, zirconium, or Insulators containing tan, neodymium, hafnium, or tantalum are used in single-layer or multi-layer configurations. It would be good to have one. Specifically, an insulating material that has the function of suppressing the permeation of impurities such as hydrogen and oxygen. As a supporting material, aluminum oxide, magnesium oxide, gallium oxide, germanium oxide, Yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, or metal oxides such as tantalum oxide, aluminum nitride, titanium aluminum nitride, nitrile Metal nitrides such as titanium dioxide, silicon nitride, or silicon nitride can be used. .

[0145] Furthermore, the insulator that functions as a gate insulator has regions containing oxygen that is released by heating. It is preferable that the insulator has a region containing oxygen that is desorbed by heating. By creating a structure in which silicon oxide or silicon oxide nitride is in contact with oxide 230, This can compensate for the oxygen deficiency present in 230.

[0146] <Conductive material> Examples of conductive materials include aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, and crystalline silver. Tun, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium Zium, zirconium, beryllium, indium, ruthenium, iridium, strontium A metallic element selected from um, lanthanum, etc., or an alloy containing the aforementioned metallic elements. It is preferable to use an alloy or the like that which combines the above-mentioned metal elements. For example, tantalum nitride Titanium nitride, tungsten, nitrides containing titanium and aluminum, tantalum and aluminum Nitrides containing ruthenium, ruthenium oxide, ruthenium nitride, strontium and ruthenium It is preferable to use oxides containing lanthanum and nickel. Tantalum, titanium nitride, titanium and aluminum nitrides, tantalum and aluminum Includes nitrides, ruthenium oxide, ruthenium nitride, strontium and ruthenium oxides Oxides containing lanthanum and nickel are conductive materials that are resistant to oxidation, or that absorb oxygen. It is preferable because it is a material that maintains conductivity even when subjected to certain conditions. Furthermore, it does not contain impurity elements such as phosphorus. Highly electrically conductive semiconductors such as polycrystalline silicon and nickel silicides. Silicide may also be used.

[0147] Furthermore, multiple conductive layers formed from the above materials may be stacked and used. For example, as described above. A laminated structure may be formed by combining a material containing a metallic element with a conductive material containing oxygen. Furthermore, a laminate combining the aforementioned metal element-containing material and a nitrogen-containing conductive material is also used. It may also be used as a structure. Furthermore, a material containing the aforementioned metal element, a conductive material containing oxygen, and nitrogen A laminated structure combining conductive materials containing elements may also be used.

[0148] Furthermore, when using oxide in the channel formation region of a transistor, as the gate A functional conductor combines a material containing the aforementioned metal element with a conductive material containing oxygen. It is preferable to use a combined laminated structure. In this case, an oxygen-containing conductive material is channeled It is preferable to place it on the channel formation region side. The oxygen-containing conductive material should be placed on the channel formation region side. This makes it easier for oxygen released from the conductive material to be supplied to the channel-forming region.

[0149] In particular, it is contained in the metal oxide in which the channel is formed, as a conductor that functions as a gate. It is preferable to use a conductive material containing a metal element and oxygen. Conductive materials containing elements and nitrogen may be used. For example, titanium nitride, tantalum nitride, etc. A conductive material containing nitrogen may also be used. In addition, indium tin oxide and tungsten oxide may be used. Indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, titanium oxide Indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, Indium tin oxide with added silicon may also be used. Zinc oxide may be used. By using such a material, channels can be formed. In some cases, hydrogen contained in the metal oxide can be captured. Alternatively, the outer insulator In some cases, hydrogen introduced from sources such as these can be captured.

[0150] <Metal oxides> It is preferable to use a metal oxide that functions as an oxide semiconductor as oxide 230. The following describes metal oxides applicable to the oxide 230 according to the present invention.

[0151] The metal oxide preferably contains at least indium or zinc. In particular, indium Preferably, it contains aluminum and zinc. In addition, aluminum and gallium It is preferable that it contains yttrium or tin, as well as boron, titanium, and iron. Nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium , one of the following selected from hafnium, tantalum, tungsten, or magnesium, It may include multiple species.

[0152] Here, the metal oxide is In-M-Zn oxide, which has indium, element M, and zinc. Let's consider the case where it is a substance. Note that element M is aluminum, gallium, yttrium, and This is tin, etc. Other elements that can be applied to element M include boron, titanium, iron, and nitrile. Germanium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Ha Examples include fluorium, tantalum, tungsten, and magnesium. However, as element M, In some cases, it is acceptable to combine multiple of the aforementioned elements.

[0153] In this specification, metal oxides containing nitrogen are also referred to as metal oxides (metal oxides). They are sometimes collectively referred to as metal oxynitrides (metal oxides). Also, metal oxides containing nitrogen are sometimes called metal oxynitrides (metal oxides). It may also be called tal oxynitride.

[0154] <Composition of metal oxides> CAC-OS (Cloud-) is a metal oxide that can be used in OS transistors. Aligned Composite Oxide Semiconductor), and CAAC-OS(c-axis Aligned Crystal Oxide Se The configuration of the `miconductor` will be explained.

[0155] CAC-OS or CAC-metal oxide refers to materials that have a conductive function in some parts. In addition, a portion of the material has insulating properties, while the material as a whole has semiconductor properties. Furthermore, CAC-OS or CAC-metal oxide is used in the active layer of the transistor. When used, the conductive function is the function of allowing electrons (or holes) that act as carriers to flow, and is an insulating material. The function of a material is to prevent the flow of electrons, which act as carriers. This is the function of both conductivity and insulation. By making the two functions work complementaryly, it enables a switching function (On / Off). This function can be imparted to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, the respective functions are separated. By doing so, the functions of both can be maximized.

[0156] Furthermore, CAC-OS or CAC-metal oxide has conductive and insulating properties. It has regions. The conductive region has the conductive function described above, and the insulating region has the insulating function described above. It has the function of [this]. Furthermore, within the material, the conductive region and the insulating region are at the nanoparticle level. In some cases, they are separated by a rib. Also, conductive regions and insulating regions are located within the material. They may be unevenly distributed. Furthermore, the conductive regions appear blurred around the edges and connected in a cloud-like pattern. There are cases where this occurs.

[0157] Furthermore, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region The marginal region is defined as being between 0.5 nm and 10 nm, preferably between 0.5 nm and 3 nm. These particles may be dispersed in the material at the following sizes.

[0158] Furthermore, CAC-OS or CAC-metal oxide have different band gaps. It is composed of the following components. For example, CAC-OS or CAC-metal oxid e consists of a component with a wide gap due to the insulating region and a narrow gap due to the conductive region. - It consists of a component having a gap. In this configuration, when the carrier is flowed, In components with a narrow gap, mainly carriers flow. Also, the narrow gap The components possessed act complementaryly with components having a wide gap, and have a narrow gap. Carriers also flow to components with a wide gap in conjunction with the components. Therefore, the above CA C-OS or CAC-metal oxide is used in the channel formation region of the transistor. In this case, the transistor has a high current driving force in the ON state, that is, a large ON current, and High field-effect mobility can be obtained.

[0159] In other words, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite (metal m It can also be called an atrix composite.

[0160] [Structure of metal oxides] Oxide semiconductors (metal oxides) include single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. It can be divided into conductors and conductors. Examples of non-single-crystal oxide semiconductors include CAAC-OS, multi-phase Amorphous oxide semiconductor, nc-OS, pseudo-amorphous oxide semiconductor (a-like OS: amor (Phosphor-like oxide semiconductor), and amorphous oxide Examples include semiconductors.

[0161] Furthermore, when focusing on the crystal structure, oxide semiconductors may be classified differently from those mentioned above. Here, we will explain the classification of crystal structures in oxide semiconductors using Figure 15(A). To clarify, Figure 15(A) shows an oxide semiconductor, typically IGZO (In, Ga, Zn). This is a diagram illustrating the classification of the crystal structures of metal oxides (including ).

[0162] As shown in Figure 15(A), IGZO can be broadly divided into Amorphous and Cry They are classified into stalline and cristal. Furthermore, within Amorphous... This includes completely amorphous elements. Also, Crystalli Among the ne components is CAAC (c-axis aligned crystalline). nc (nanocrystalline) and CAC (Cloud-Aligned It includes Composite. Also, within Crystal, there is single cr This includes ystal and polycrystal.

[0163] The structure within the thick frame shown in Figure 15(A) is New crystalline pha This structure belongs to the se group. This structure is between Amorphous and Crystal. It lies in the boundary region. That is, the energetically unstable Amorphous and Cryst In other words, it can be said that it has a completely different structure from alline.

[0164] The crystal structure of the film or substrate can be determined by X-ray diffraction (XRD). It can be evaluated using an ion image. Here, quartz glass and Crystal XRD of IGZO (also called crystalline IGZO) having a crystal structure classified as ine The vectors are shown in Figures 15(B) and (C). Also, Figure 15(B) is quartz glass, and Figure 15(C) is quartz glass. ) is the XRD spectrum of crystalline IGZO. Note that the crystalline IGZO shown in Figure 15(C) is also shown. The composition of O is In:Ga:Zn=4:2:3 [atomic ratio]. Also, Figure 15( The crystalline IGZO shown in C) has a thickness of 500 nm.

[0165] As shown by the arrow in Figure 15(B), the peaks in the XRD spectrum of quartz glass are almost opposite. It is called [name]. On the other hand, as shown by the arrow in Figure 15(C), crystalline IGZO has an XRD spectrum The peak of the Toll is asymmetric. The asymmetrical peak of the XRD spectrum indicates that the crystal Its presence is clearly indicated. In other words, if the peaks in the XRD spectrum are not symmetrical, Am It cannot be said that it is an orphos.

[0166] CAAC-OS has c-axis orientation and multiple nanocrystals are linked in the ab-plane direction. It has a crystalline structure that is linked and distorted. Note that distortion refers to the linkage between multiple nanocrystals. Within a region, between a region with a aligned grid arrangement and another region with a aligned grid arrangement, the grid arrangement This refers to the point where the orientation has changed.

[0167] Nanocrystals are based on a hexagonal shape, but they are not necessarily regular hexagons; they can also be non-regular hexagonal. There are also cases where the distortion has a grid arrangement such as pentagons and heptagons. Furthermore, in CAAC-OS, even near strain, clear grain boundaries (grain bows) are present. It is difficult to confirm (also called unduli). In other words, due to the distortion of the lattice arrangement, the crystal It can be seen that grain boundary formation is suppressed. This is because CAAC-OS is in the ab-plane direction. In this case, the arrangement of oxygen atoms is not dense, and the substitution of metal elements reduces the interatomic bond distance. This is because the distortion can be tolerated due to changes in other factors.

[0168] Furthermore, CAAC-OS consists of a layer containing indium and oxygen (hereinafter referred to as the In layer), and A layered crystal in which layers containing element M, zinc, and oxygen (hereinafter referred to as (M,Zn) layers) are stacked. It tends to have a structure (also called a layered structure). Note that indium and element M are relative to each other. It is interchangeable, and if element M in the (M,Zn) layer is replaced with indium, then (In,M,Zn It can also be represented as a layer. Furthermore, if the indium in the In layer is replaced by element M, (In, It can also be represented as layer M.

[0169] CAAC-OS is a highly crystalline metal oxide. On the other hand, CAAC-OS has a clear bond. Because it is difficult to confirm grain boundaries, a decrease in electron mobility caused by grain boundaries is less likely to occur. It can be said that... Also, the crystallinity of metal oxides decreases due to the inclusion of impurities and the formation of defects. Because this can occur, CAAC-OS may contain impurities or defects (oxygen deficiency (V) O :oxygen v It can also be said that it is a metal oxide with low acancy (also called acancy). Therefore, CAAC- Metal oxides containing OS have stable physical properties. Therefore, CAAC-OS is Metal oxides are heat-resistant and highly reliable.

[0170] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially regions larger than 1 nm). It has periodicity in the atomic arrangement in the region of 3 nm or less. Also, nc-OS has different na No regularity is observed in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the entire film. Therefore, depending on the analytical method, nc-OS may be a-like OS or amorphous oxide semiconductor. It can sometimes be indistinguishable from the body.

[0171] Furthermore, indium is a type of metal oxide containing indium, gallium, and zinc. Um-gallium-zinc oxide (hereinafter referred to as IGZO) is stable when formed into the nanocrystals described above. It may take on a structure. In particular, IGZO tends to have difficulty growing crystals in the atmosphere. Smaller crystals (for example) are preferable to larger crystals (here, crystals of a few millimeters or a few centimeters). In some cases, using the aforementioned nanocrystal structure may result in greater structural stability.

[0172] a-like OS is a metallic acid having a structure between nc-OS and amorphous oxide semiconductors. It is a monster. a-like OS has porous or low-density regions. That is, a-li ke OS has lower crystallinity compared to nc-OS and CAAC-OS.

[0173] Oxide semiconductors (metal oxides) can take on diverse structures, each possessing different properties. An oxide semiconductor according to one aspect of the present invention is an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, and a-li It may have two or more of the following: ke OS, nc-OS, and CAAC-OS.

[0174] Furthermore, in a semiconductor device according to one aspect of the present invention, the structure of the oxide semiconductor (metal oxide) There are no particular limitations, but it is preferable that it be crystalline. For example, if oxide 230 is CA The AC-OS structure allows for a hexagonal crystal structure of oxide 243. By using the above crystal structure for 0 and oxide 243, a semiconductor device with high reliability can be obtained. It is possible to also roughly analyze oxides 230a, 230c, and 243. The same composition can be achieved.

[0175] <Transistors containing oxide semiconductors> Next, we will explain the case where the above oxide semiconductor is used in a transistor.

[0176] By using the above oxide semiconductor in a transistor, a transistor with high field-effect mobility is obtained. This can be achieved. Furthermore, highly reliable transistors can be realized.

[0177] Furthermore, it is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. When lowering the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film is reduced. The degree should be lowered, and the defect level density should be lowered. In this specification, the impurity concentration is low, A low defect level density is referred to as high-purity intrinsic or substantially high-purity intrinsic.

[0178] Furthermore, oxide semiconductor films that are high-purity intrinsic or substantially high-purity intrinsic have a low defect level density. Therefore, the trap level density may also be low.

[0179] Furthermore, the time required for charges trapped in the trap levels of an oxide semiconductor to disappear is... It can behave for a long time, almost like a fixed charge. Therefore, the trap level density is high. Transistors in which a channel formation region is formed in an oxide semiconductor have unstable electrical properties. There are cases where this occurs.

[0180] Therefore, in order to stabilize the electrical characteristics of a transistor, the impurity concentration in the oxide semiconductor is Reducing it is effective. Furthermore, in order to reduce the impurity concentration in oxide semiconductors, It is also preferable to reduce the concentration of impurities in the adjacent membrane. Examples of impurities include hydrogen, nitrogen, and Examples include potassium metals, alkaline earth metals, iron, nickel, and silicon.

[0181] <Impurities> Here, we will explain the effects of various impurities in oxide semiconductors.

[0182] In oxide semiconductors, if silicon or carbon, which are among the Group 14 elements, are present, oxidation occurs. Defect levels are formed in silicon semiconductors. Therefore, in oxide semiconductors, silicon and carbon The concentration of the element, for example, at the interface between an insulator and an oxide semiconductor, and at the silicon and carbon near the interface. Concentration of elementary particles (Secondary Ion Mass Spectrometry (SIMS) The concentration obtained by spectrometry is 2 × 10 18 atoms / cm 3 The following is preferably 2 × 10 17 atoms / cm 3 The following applies:

[0183] Furthermore, if alkali metals or alkaline earth metals are present in the oxide semiconductor, defect levels are formed. This can result in the generation of carriers. Therefore, alkali metals or alkaline earth metals may be present. Transistors using oxide semiconductors tend to exhibit normally-on characteristics. Therefore, it is preferable to reduce the concentration of alkali metals or alkaline earth metals in oxide semiconductors. Specifically, alkali metals or alkalis in oxide semiconductors obtained by SIMS. The concentration of earth metals is 1 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 16 at oms / cm 3 Do the following:

[0184] Furthermore, in oxide semiconductors, when nitrogen is present, electrons, which are carriers, are generated. As the nitrogen concentration increases, it becomes easier to convert to n-type semiconductors. As a result, oxide semiconductors containing nitrogen become semiconductors. The transistor used in this case tends to exhibit normally-on characteristics. Therefore, in this oxide semiconductor... Furthermore, it is preferable that nitrogen is reduced as much as possible. For example, nitrogen in oxide semiconductors The concentration in SIMS is 5 × 10⁻⁶. 19 atoms / cm 3 Less than 5 × 10 18atoms / cm 3 More preferably 1 × 10 18 atoms / cm 3 The following, More preferably 5 × 10 17 atoms / cm 3 The following applies:

[0185] Furthermore, the hydrogen contained in oxide semiconductors reacts with the oxygen bonded to the metal atoms to form water. Therefore, an oxygen deficiency may form. When hydrogen enters this oxygen deficiency, the carrier electrons In some cases, a child may be produced. Also, some of the hydrogen combines with the metal atom and oxygen, resulting in a crystal. It can generate electrons that act as carriers. Therefore, an oxide semiconductor containing hydrogen is used. Transistors with this characteristic tend to exhibit normally-on properties. Therefore, hydrogen in oxide semiconductors It is preferable that the SI is reduced as much as possible. Specifically, in oxide semiconductors, The hydrogen concentration obtained by MS is 1 × 10 20 atoms / cm 3 Less than 1x 10 19 atoms / cm 3 Less than 5x10 18 atoms / cm 3 less than More preferably 1 × 10 18 atoms / cm 3 Less than.

[0186] Using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor. This allows for the provision of stable electrical characteristics.

[0187] <Other semiconductor materials> The semiconductor materials that can be used for oxide 230 are not limited to the metal oxides mentioned above. Material 230 is a semiconductor material with a band gap (not a zero-gap semiconductor). (Body materials) may be used. For example, semiconductors of elemental elements such as silicon, gallium arsenide, etc. Compound semiconductors, layered materials that function as semiconductors (also called atomic layer materials, two-dimensional materials, etc.) It is preferable to use materials such as . as semiconductor materials. In particular, layered materials that function as semiconductors It is suitable for use in semiconductor materials.

[0188] Here, in this specification, etc., "layered material" is a general term for a group of materials having a layered crystalline structure. The layered crystalline structure is formed by layers created by covalent and ionic bonds, such as van der Wain. It is a structure in which layers are attached via weaker bonds than covalent or ionic bonds, such as the Rus force. Layered materials have high electrical conductivity within a unit layer, meaning they have high two-dimensional electrical conductivity. By using a material that functions as a semiconductor and has high two-dimensional electrical conductivity in the channel formation region. This allows us to provide transistors with high on-current.

[0189] Layered materials include graphene, silicene, and chalcogenides. It is a compound containing chalcogens. Furthermore, chalcogens are a general term for elements belonging to Group 16. It contains oxygen, sulfur, selenium, tellurium, polonium, and livermorium. Examples of cogenides include transition metal chalcogenides and group 13 chalcogenides.

[0190] For example, a transition metal chalcogenide that functions as a semiconductor can be used as oxide 230. This is preferable. Specifically, as transition metal chalcogenides applicable as oxide 230, These are molybdenum sulfide (typically MoS2) and molybdenum selenide (typically MoSe 2) Molybdenum telluride (typically MoTe2), tungsten sulfide (typically WS) 2) Tungsten selenide (typically WSe2), tungsten tellurium (typically WTe2), hafnium sulfide (typically HfS2), hafnium selenide (typically HfSe2), zirconium sulfide (typically ZrS2), zirconium selenide (typically Examples include ZrSe2.

[0191] <Method for fabricating semiconductor devices> Next, Figure 1 shows a transistor 200 and a capacitive element 100 according to the present invention. The manufacturing method of the semiconductor device will be explained using Figures 4 to 14. In section 4, (A) in each figure shows a top view. Also, (B) in each figure shows the A1- shown in (A). This is a cross-sectional view corresponding to the area indicated by the dashed line in A2, showing transistor 200 and capacitance element This is also a cross-sectional view of child 100 in the channel length direction. In addition, (C) in each figure is A3-A in (A). This is a cross-sectional view corresponding to the area indicated by the dashed line in 4, showing the channel width direction of transistor 200. It is also a cross-sectional view. In addition, (D) in each figure is the part shown by the dashed line A5-A6 in (A). This is a corresponding cross-sectional view, and also a cross-sectional view of the capacitive element 100 in the channel width direction. In the top view of (A), some elements have been omitted for clarity.

[0192] First, a substrate (not shown) is prepared, and an insulator 214 is deposited on the substrate. 14. Film deposition methods include sputtering and chemical vapor deposition (CVD). Deposition method, Molecular beam epitaxy (MBE) EAM Epitaxy, Pulsed Laser Deposition (PLD) Deposition method, or ALD (Atomic Layer Deposit) This can be done using methods such as the ion method.

[0193] Furthermore, the CVD method is a type of plasma CVD (PECVD) that utilizes plasma. Enhanced CVD (Enhanced CVD), Thermal CVD (TCVD: Thermal CCVD) which utilizes heat. It can be classified into methods such as the VD method and the photoCVD method which utilizes light. Depending on the source gas used, the process can be metal CVD (MCVD) or organometallic CVD. It can be divided into (MOCVD: Metal Organic CVD) methods. The pressure during film deposition determines whether the film is deposited under atmospheric pressure (APCVD: Atmospheric Pressure CVD). (Heric Pressure CVD) method: Film deposition is performed under reduced pressure conditions below atmospheric pressure. It can be divided into CVD (LPCVD: Low Pressure CVD) methods.

[0194] Plasma CVD can produce high-quality films at relatively low temperatures. Thermal CVD, on the other hand, is a method that can produce high-quality films at low temperatures. A film deposition method that does not use Zuma, thus minimizing plasma damage to the workpiece. For example, wiring, electrodes, and elements (transistors, capacitive elements, etc.) included in semiconductor devices. ) and others can be charged up by receiving an electric charge from the plasma. In cases where the accumulated charge destroys the wiring, electrodes, and elements contained in the semiconductor device. On the other hand, in the case of thermal CVD methods that do not use plasma, such plasma damage occurs. Therefore, the yield of semiconductor devices can be increased. Also, in the thermal CVD method, Because plasma damage does not occur within the film, a film with fewer defects can be obtained.

[0195] Furthermore, in the ALD method, the reaction between the precursor and reactant is carried out using only thermal energy. Thermal ALD (Thermal Altode Discharge) method, using plasma-excited reactants. Methods such as EALD (Plasma Enhanced Alopecia) can be used.

[0196] The ALD method utilizes the self-regulating properties of atoms to deposit atoms layer by layer. Because it can deposit extremely thin films, it can deposit films on structures with high aspect ratios, and eliminates pinholes, etc. It enables film formation with fewer defects, film formation with excellent coverage, and film formation at low temperatures. What are the effects? In the PEALD method, by using plasma, film deposition at lower temperatures is possible. This can be beneficial in some cases. Furthermore, the precursor used in the ALD method contains impurities such as carbon. Some contain [this]. Therefore, films formed by the ALD method are different from films formed by other film formation methods. Compared to a standard film, it may contain more impurities such as carbon. Note that the quantitative determination of impurities is done using X. X-ray Photoelectron Spectros (XPS) This can be done using `copy`.

[0197] CVD and ALD are film deposition methods in which particles emitted from a target or other source are deposited. Unlike other methods, this is a film-forming method in which a film is formed by a reaction on the surface of the object being treated. This film-forming method is less affected by the shape of the workpiece and has good step-level coverage. Furthermore, the ALD method has excellent step coverage and excellent thickness uniformity, thus aspect ratio This method is suitable for coating the surface of high-aperture openings, etc. However, the ALD method is relatively suitable for film formation. Because of its slow rate, it should be used in combination with other film deposition methods that have a faster deposition rate, such as CVD. In some cases, this may be preferable.

[0198] The CVD and ALD methods control the composition of the resulting film by adjusting the flow rate ratio of the source gases. This is possible. For example, in the CVD method and ALD method, the flow rate ratio of the raw material gas can be adjusted as needed. A film with the following composition can be formed. Furthermore, for example, in the CVD method and ALD method, film formation can be performed. By changing the flow rate ratio of the raw material gas while simultaneously depositing a film with a continuously changing composition. This is possible. When forming a film while changing the flow rate ratio of the raw material gas, multiple deposition chambers can be used. Compared to the method of film deposition using a conveyor belt, it eliminates the time required for transport and pressure adjustment, thus reducing the time required for film deposition. The interval can be shortened. Therefore, the productivity of semiconductor devices can be increased. There is.

[0199] In this embodiment, silicon nitride is deposited as the insulator 214 by CVD. Next, an insulator 216 is deposited on the insulator 214. The insulator 216 is deposited by sputtering. This can be done using methods such as the CVD method, MBE method, PLD method, or ALD method. In this embodiment, silicon oxide or silicon oxide-nitride is used as the insulator 216. Furthermore, the insulator 216 is formed by a film deposition method using a gas in which the hydrogen atoms described above have been reduced or removed. It is preferable to form a film. This makes it possible to reduce the hydrogen concentration of the insulator 216. .

[0200] Next, an opening is formed in the insulator 216 that reaches the insulator 214. An opening is, for example, a groove or This also includes slits, etc. Furthermore, the term "opening" can sometimes refer to the area where an opening has been formed. The opening can be formed using wet etching, but dry etching is preferable. This is preferable for microfabrication. In addition, the insulator 214 forms grooves by etching the insulator 216. It is preferable to select an insulator that functions as an etching stopper film during the etching process. When a silicon oxide film or silicon oxide-nitride film is used for the insulator 216 that forms the groove, The insulator 214 is made of a silicon nitride film, an aluminum oxide film, or a hafnium oxide film. It would be good to do so.

[0201] After the opening is formed, a conductive film that will become conductor 204a and a conductive film that will become conductor 205a are formed. A film is formed. It is desirable that the conductive film contains a conductor that has the function of suppressing oxygen permeation. For example, tantalum nitride, tungsten nitride, titanium nitride, etc., can be used. Or tantalum, tungsten, titanium, molybdenum, aluminum, copper, molybdenum It can be formed as a laminated film with a sten alloy. A conductive film that becomes the conductor 204a, and a conductive The conductive film that will become the electrode 205a is deposited using sputtering, CVD, MBE, or PLD. Alternatively, it can be performed using methods such as the ALD method.

[0202] In this embodiment, a conductive film that becomes conductor 204a and a conductive film that becomes conductor 205a This will be a multilayer structure. First, tantalum nitride will be deposited by sputtering, and the nitride Titanium nitride is laminated on top of the conductor. Such metal nitrides are used as conductor 204 and conductive By being used in the lower layer of body 205, a conductive film becomes the conductive material 204b described later, and a conductive Even if a diffusible metal such as copper is used as the conductive film that forms body 205b, the metal is a conductor. This prevents diffusion outward from 204a and the conductor 205a.

[0203] Next, a conductive material that will become conductor 204b and a conductive film that will become conductor 205b are formed. The conductive film is formed by plating, sputtering, CVD, MBE, PLD, or This can be done using methods such as the ALD method. In this embodiment, the conductive material 204b is the conductive material. A low-resistance conductive material such as copper is deposited as the body and as a conductive film that will form the conductor 205b.

[0204] Next, CMP treatment (Chemical Mechanical Polishing) By doing so, a conductive film that becomes conductor 204a and a conductive film that becomes conductor 205a are obtained. Next, remove the conductive film that will become conductor 204b and a portion of the conductive film that will become conductor 205b. The insulator 216 is exposed. As a result, the conductors 204a and 204b are exposed only at the opening. Conductors 205a and 205b remain. As a result, the top surface is flat, and the conductor 204 and the conductive material 205 can be formed. Furthermore, by this CMP treatment, an insulating material can be formed. A portion of the edge 216 may be removed (see Figure 4).

[0205] In the above, the conductors 204 and 205 are embedded in the opening of the insulator 216. Although formed by fitting, this embodiment is not limited to this. For example, an insulator Conductors 204 and 205 are formed on 214, and conductor 204 and conductor 2 An insulator 216 is formed on 05, and the insulator 216 is subjected to CMP treatment, thereby the insulator 216 A portion of the material may be removed to expose the surfaces of conductor 204 and conductor 205.

[0206] Next, an insulator 222 is deposited on the insulator 216, the conductor 204, and the conductor 205. The insulator 222 is made of an oxide of either or both aluminum and hafnium. It is preferable to form a film containing an insulator. Insulators containing oxides include aluminum oxide, hafnium oxide, aluminum and ha It is preferable to use an oxide containing hafnium (such as hafnium aluminate). Insulators containing oxides of either or both of nium and hafnium are suitable for oxygen, hydrogen, and It has barrier properties against water. The insulator 222 has barrier properties against hydrogen and water. As a result, hydrogen and water contained in the structure surrounding transistor 200 become saturates. Diffusion into the inside of the transistor 200 through the edge 222 is suppressed, and oxide 230 This can suppress the formation of oxygen deficiencies inside.

[0207] The insulator 222 is deposited by sputtering, CVD, MBE, PLD, or A This can be done using methods such as the LD method.

[0208] Next, an insulator 224 is deposited on the insulator 222. The insulator 224 is deposited by sputtering. This can be done using methods such as the kerning method, CVD method, MBE method, PLD method, or ALD method. In this embodiment, silicon oxide or silicon oxide-nitride is used as the insulator 224. Furthermore, the insulator 224 is formed using a film deposition method with the above-mentioned hydrogen atoms reduced or removed. It is preferable to form the film using this method. This makes it possible to reduce the hydrogen concentration of the insulator 224. The insulator 224 comes into contact with the oxide 230a in a later process, so the hydrogen concentration is such that It is preferable that it be reduced.

[0209] Next, it is preferable to perform a heat treatment. The heat treatment should be performed at a temperature of 250°C to 650°C. The process is carried out at a temperature of 300°C to 500°C, more preferably 320°C to 450°C. That's fine. Note that the heat treatment should be performed in a nitrogen or inert gas atmosphere, or with an oxidizing gas at 10 pp. The process should be carried out in an atmosphere containing m or more, 1% or more, or 10% or more. Furthermore, the heat treatment should be performed under reduced pressure. It may be done. Alternatively, the heat treatment may be performed after heat treatment in a nitrogen or inert gas atmosphere. To compensate for the removed oxygen, it contains oxidizing gas at a concentration of 10 ppm or more, 1% or more, or 10% or more. Heat treatment may be carried out in a suitable atmosphere.

[0210] In this embodiment, after processing at a temperature of 400°C for 1 hour in a nitrogen atmosphere, The material is then treated in an oxygen atmosphere at a temperature of 400°C for 1 hour. This heat treatment improves insulation. It can remove impurities such as water and hydrogen contained in body 224.

[0211] Furthermore, the heat treatment may be performed after the film formation of the insulator 222. This heat treatment is as described above. Heat treatment conditions can be used.

[0212] Here, in order to form an excess oxygen region in the insulator 224, a plasma containing oxygen is used under reduced pressure. Plasma treatment may be performed. Oxygen-containing plasma treatment can be performed, for example, using high-density microwaves. It is preferable to use a device that has a power supply for generating rasma. Alternatively, an RF device on the substrate side may be used. Any high-frequency power supply may be used. By using high-density plasma, high density It can generate oxygen radicals, and by applying RF to the substrate side, a high-density plasma can be created. Therefore, the generated oxygen radicals can be efficiently guided into the insulator 224. Alternatively, After performing plasma treatment with an inert gas using this device, to replenish the desorbed oxygen Plasma treatment containing oxygen may be performed. The conditions for the plasma treatment may be selected as appropriate. By doing so, impurities such as water and hydrogen contained in the insulator 224 can be removed. In that case, heat treatment is not necessary.

[0213] Here, aluminum oxide is applied to the insulator 224, for example, by sputtering. The film may be formed, and CMP may be performed until the aluminum oxide reaches the insulator 224. By performing CMP, the surface of the insulator 224 is planarized and smoothed. This can be achieved. By placing the aluminum oxide on the insulator 224 and performing CMP, C The end point detection of the MP becomes easier. Also, a portion of the insulator 224 is polished by the CMP. The film thickness of the insulator 224 may become thin, but the film thickness can be adjusted during the deposition of the insulator 224. This is sufficient. Planarizing and smoothing the surface of the insulator 224 will improve the adhesion of the oxide film to be formed later. In some cases, it is possible to prevent a deterioration in coverage and thus prevent a decrease in the yield of semiconductor devices. Also, By depositing aluminum oxide on the insulator 224 using the sputtering method, This is preferable because oxygen can be added to the insulator 224.

[0214] Next, oxide films 230A and 230B are deposited sequentially on the insulator 224 (see Figure 4). ). Furthermore, it is preferable to continuously deposit the above oxide film without exposing it to the atmospheric environment. By forming the film without opening it, the oxide film 230A and oxide film 230B are protected from the atmospheric environment. It can prevent impurities or moisture from adhering, and oxide film 230A and oxide film 230B The vicinity of the interface can be kept clean.

[0215] The oxide films 230A and 230B were deposited by sputtering, CVD, and MBE. This can be done using methods such as the PLD method or the ALD method.

[0216] For example, oxide film 230A and oxide film 230B are deposited by sputtering. In this case, oxygen or a mixture of oxygen and a noble gas is used as the sputtering gas. By increasing the proportion of oxygen in the puttering gas, excess oxygen in the formed oxide film... This can increase the amount. Also, when the above oxide film is deposited by sputtering: The above-mentioned In-M-Zn oxide target can be used.

[0217] In particular, during the deposition of oxide film 230A, some of the oxygen contained in the sputtering gas acts as an insulator. It may be supplied to 224. Therefore, it is included in the sputtering gas of oxide film 230A. The proportion of oxygen present should be 70% or more, preferably 80% or more, and more preferably 100%. Yes.

[0218] Furthermore, when forming oxide film 230B by sputtering, the sputtering gas contains When the oxygen content is set to 1% or more and 30% or less, preferably 5% or more and 20% or less, the film is formed. Oxygen-deficient oxide semiconductors are formed. The transistor used in this region provides relatively high field-effect mobility. Also, when the substrate is heated... By performing film formation while simultaneously depositing the oxide film, the crystallinity of the oxide film can be improved. However, one aspect of the present invention is not limited thereto. The oxide film 230B is formed by a sputtering method. In this case, the proportion of oxygen in the sputtering gas is preferably between 30% and 100%. Alternatively, if the film is deposited with an oxygen content of 70% to 100%, an oxygen-rich oxide semiconductor is formed. Transistors using oxygen-rich oxide semiconductors in the channel formation region are relatively high Reliability can be obtained.

[0219] In this embodiment, the oxide film 230A is formed by sputtering, using the In:Ga: Zn = 1:1:0.5 [atomic ratio] (2:2:1 [atomic ratio]), or 1:3:4 [ The film is deposited using a target with an atomic ratio. In addition, as oxide film 230B, sputtering According to the method, In:Ga:Zn = 4:2:4.1 [atomic ratio], or 1:1:1 [ The film is deposited using a target with an atomic ratio. Note that each oxide film is determined by the deposition conditions and atomic ratio. By appropriately selecting the ratio, the oxide 230 can be formed to match the desired properties.

[0220] Next, heat treatment may be performed. The heat treatment can be carried out using the heat treatment conditions described above. The heat treatment removes the water, hydrogen, and other impurities from the oxide film 230A and oxide film 230B. It is possible to remove pure substances, etc. In this embodiment, at a temperature of 400°C in a nitrogen atmosphere After a 1-hour treatment, the sample is continuously treated in an oxygen atmosphere at a temperature of 400°C for another 1 hour. cormorant.

[0221] Next, an oxide film 243A is deposited on the oxide film 230B (see Figure 4). Thin film deposition is performed using sputtering, CVD, MBE, PLD, or ALD methods. It can be done. Oxide film 243A has an atomic ratio of Ga to In, compared to oxide film 230B. It is preferable that the atomic ratio of Ga to In is greater than that of In. In this embodiment, oxide film 2 As 43A, the atom ratio In:Ga:Zn=1:3:4 was obtained by sputtering. The film is deposited using the target.

[0222] Next, using lithography, the insulator 224, oxide film 230A, oxide film 230B, and the oxide film 243A is processed into an island shape to form insulator 224, oxide 230a, oxide 230 b, and oxide layer 243B are formed (see Figure 5). Here, insulator 224, oxide 2 30a, oxide 230b, and oxide layer 243B are at least partially connected to the conductor 205. They are formed to overlap. Also, insulator 224, oxide 230a, oxide 230b, and The oxide layer 243B is formed such that it has at least a region that does not overlap with the conductor 204. Furthermore, this process can be carried out using either a dry etching method or a wet etching method. Dry etching is suitable for microfabrication.

[0223] Furthermore, the sides of oxide 230a, oxide 230b, and oxide layer 243B are insulator 2 It is preferable that it be approximately perpendicular to the upper surface of 22. Oxide 230a, Oxide 230b, Furthermore, the sides of the oxide layer 243B are approximately perpendicular to the upper surface of the insulator 222, When providing multiple transistors 200 and capacitive elements 100, miniaturization and high density are achieved. This becomes possible. However, it is not limited to this, and also applies to oxides 230a, 230b, and oxides The angle between the side surface of layer 243B and the top surface of the insulator 222 may be set to a low angle.

[0224] In lithography, the resist is first exposed through a mask. Next, exposure... The selected area is removed or left intact using a developer to form a resist mask. Next, By etching through the resist mask, conductors, semiconductors, or insulators, etc. It can be processed into the desired shape. For example, KrF excimer laser light, ArF excimer Using malea light, EUV (Extreme Ultraviolet) light, etc., A resist mask can be formed by exposing the resist. Also, between the substrate and the projection lens Alternatively, an immersion technique may be used, in which a liquid (e.g., water) is filled into the container and exposed to light. Alternatively, electron beams or ion beams may be used. If used, a mask is not required. Note that to remove the resist mask, an ashing process is necessary. Which dry etching process, which wet etching process, dry etching process After processing, wet etching is performed, or dry etching is performed after wet etching. It can perform a processing step.

[0225] Alternatively, a hard mask made of an insulator or conductor may be used instead of a resist mask. When using a hard mask, for example, an insulating material that will serve as the hard mask material is placed on the oxide layer 243B. A border film or conductive film is formed, a resist mask is formed on top of it, and the hard mask material is etched. By doing so, a hard mask of the desired shape can be formed. (e.g., oxide layer 243B) Etching can be done after removing the resist mask, or with the resist mask still attached. You can proceed as is. In the latter case, the resist mask may disappear during etching. The hard mask may be removed by etching after etching the oxide layer 243B, etc. i. On the other hand, if the hard mask material does not affect subsequent processes, or can be used in subsequent processes. It is not always necessary to remove the hard mask.

[0226] As a dry etching apparatus, a capacitively coupled plasma (CCP) system with parallel plate electrodes is used. (Capacitively Coupled Plasma) Etching apparatus is used. Capacitively coupled plasma etching apparatus having parallel plate electrodes can be used. Alternatively, a high-frequency power supply may be applied to one electrode of the type electrode. Or, one of the parallel plate type electrodes. Alternatively, a configuration in which multiple different high-frequency power supplies are applied to the electrodes may be used. Or a parallel plate type electrode Alternatively, a configuration in which a high-frequency power supply of the same frequency is applied to each of them may be used. Alternatively, a configuration in which high-frequency power supplies of different frequencies are applied may be used. Or, a high-density plasma source may be used. A dry etching apparatus can be used. Dry etching with a high-density plasma source. The device is, for example, an inductively coupled plasma (ICP) device. Etching equipment such as an ed Plasma etching device can be used.

[0227] Next, a conductive film, which will become the conductive layer 242A, is deposited on the oxide layer 243B (see Figure 6). The conductive film that will become the conductive layer 242A is deposited using sputtering, CVD, MBE, or PLD. This can be done using methods such as the law or the ALD method.

[0228] Next, a conductive film to be made into conductive layer 242A is processed using lithography, and the conductive layer Forms 242A (see Figure 7).

[0229] Next, an insulator 272 is deposited on the conductive layer 242A (see Figure 7). Thin film deposition is performed using methods such as sputtering, CVD, MBE, PLD, or ALD. This can be done. In this embodiment, the insulator 272 is made by sputtering. Aluminum oxide is deposited. Aluminum oxide is deposited by sputtering. This allows oxygen to be injected into the insulator 224.

[0230] Next, an insulator 273 is deposited on the insulator 272. The insulator 273 is deposited by sputtering. This can be performed using methods such as the blotting method, CVD method, MBE method, PLD method, or ALD method. In this embodiment, aluminum oxide is deposited as the insulator 273 by the ALD method. (See Figure 7).

[0231] Next, an insulating film that will become the insulator 280 is deposited. The deposition of the insulating film that will become the insulator 280 is carried out by This can be done using methods such as puttering, CVD, MBE, PLD, or ALD. Yes, it is possible. For example, as insulator 280, a silicon oxide film can be deposited using the sputtering method. Then, if you deposit a silicon oxide film on top of it using the PEALD method or the thermal ALD method... Good. Also, the insulating film that becomes the insulator 280 is a gas in which the above-mentioned hydrogen atoms are reduced or removed. It is preferable to form the film using a film formation method that utilizes [a specific method]. This reduces the hydrogen concentration of the insulator 280. It can be reduced.

[0232] Next, the insulator 280 is subjected to CMP treatment to form an insulator 280 with a flat top surface (Figure 7). (See reference). In addition, similar to the insulator 224, on the insulator 280, for example, by sputtering Therefore, a film of aluminum oxide is formed, and the aluminum oxide is deposited until it reaches the insulator 280. CMP may be performed.

[0233] Next, a portion of the insulator 280, a portion of the insulator 273, a portion of the insulator 272, and the conductive layer 24 A portion of 2A and a portion of the oxide layer 243B are processed to create an opening that reaches the oxide 230b. Form an opening (see Figure 8). It is preferable that the opening be formed so as to overlap with the conductor 205. The formation of the opening allows conductor 242a, conductor 242b, oxide 243a, and acid to be separated. It forms compound 243b.

[0234] A portion of insulator 280, a portion of insulator 273, a portion of insulator 272, and oxide layer 243B Some parts, and some parts of the conductive layer 242A, are processed by dry etching or wet etching. The etching method can be used. Dry etching is suitable for microfabrication. Furthermore, the processing may be carried out under different conditions. For example, the insulator 280 Part of the material was processed using the dry etching method, and part of the insulator 273 was processed using the wet etching method. Then, the insulator 272 is processed by dry etching to form an oxide layer 243B and a conductive layer 2 A portion of 42A may be processed by dry etching.

[0235] Conventional processes such as dry etching can cause oxidation in etching gases, etc. The impurities caused by these impurities adhere to the surface or interior of oxide 230a and oxide 230b, and It can diffuse. Impurities include, for example, fluorine or chlorine.

[0236] To remove the above-mentioned impurities, washing is performed. The washing method involves using a washing solution, etc. These include wet cleaning, plasma treatment using plasma, or cleaning by heat treatment. The above cleaning methods may be combined as appropriate.

[0237] For wet cleaning, use oxalic acid, phosphoric acid, ammonia water, or hydrofluoric acid, etc. Washing may be performed using an aqueous solution diluted with carbonated water or distilled water. Alternatively, distilled water or Ultrasonic cleaning using carbonated water may also be performed.

[0238] Until now, oxide 230 has been processed by methods such as dry etching or the cleaning treatment described above. The film thickness in the region that does not overlap with oxide 243a and oxide 243b of b is oxide 230b The film thickness may be thinner than the region overlapping with oxides 243a and 243b. (See Figure 8)

[0239] Heat treatment may be performed after the etching or cleaning described above. For example, the heat treatment may be performed after the etching or cleaning described above. The process should be carried out at a temperature of 100°C to 450°C, more preferably 350°C to 400°C. The heat treatment is performed in an atmosphere of nitrogen gas or an inert gas, or with an oxidizing gas at 10 pp. The process is carried out in an atmosphere containing m or more, 1% or more, or 10% or more. For example, heat treatment is carried out in an oxygen atmosphere. It is preferable to carry this out using gas. This supplies oxygen to oxides 230a and 230b. Provide oxygen, oxygen deficiency V O This can reduce the amount of heat loss. Also, the heat treatment can be performed under reduced pressure. Good. Alternatively, heat treatment in an oxygen atmosphere followed by continuous treatment in a nitrogen atmosphere without exposure to air. Heat treatment may be performed.

[0240] Next, the oxide film 230C is formed (see Figure 9). Heat treatment is performed before forming the oxide film 230C. This may be done, and the heat treatment shall be carried out under reduced pressure, without exposure to air, and without continuous oxidation. It is preferable to form a film 230C. Furthermore, this heat treatment is carried out in an oxygen-containing atmosphere. This is preferable. By performing such a treatment, adsorption occurs on the surface of oxide 230b, etc. Removes the moisture and hydrogen present, and further removes the moisture in oxide 230a and oxide 230b. The concentration and hydrogen concentration can be reduced. The heat treatment temperature is 100°C to 400°C. A temperature of ℃ or lower is preferred, and more preferably 150℃ or higher and 350℃ or lower. In this embodiment The heat treatment is performed at a temperature of 200°C under reduced pressure.

[0241] Here, the oxide film 230C is at least a portion of the upper surface of oxide 230b, and oxide 243 A portion of the side, a portion of the side of the conductor 242, a portion of the side of the insulator 272, the side of the insulator 273 It is preferable that it be provided so as to be in contact with a part of the surface and a part of the side surface of the insulator 280. Conductor 242 is composed of oxide 243, insulator 272, insulator 273, and oxide film 230C. Being enclosed suppresses the decrease in conductivity due to oxidation of conductor 242 in subsequent processes. It is possible.

[0242] The deposition of oxide film 230C is performed by sputtering, CVD, MBE, PLD, or A This can be done using methods such as LD. The oxide film 230C can be produced by sputtering. So, the target is In:Ga:Zn=4:2:4.1 [atomic ratio], In:Ga:Zn= Target with an atomic ratio of 5:1:3, In:Ga:Zn = 10:1:3 Target, or target with In:Ga:Zn=1:3:4 [atomic ratio], in oxide The film is deposited using a zinc target. A high proportion of indium is used as the oxide film 230C. By using a target, the on-current of transistor 200, or the field-effect mobility, etc. It can improve.

[0243] Furthermore, the oxide film 230C may be layered. For example, by sputtering, A film is deposited using a target with an atomic ratio of Ga:Zn = 4:2:4.1, and then continuously... The film may also be deposited using a target with an atomic ratio of n:Ga:Zn = 1:3:4.

[0244] During the deposition of oxide film 230C, some of the oxygen contained in the sputtering gas becomes oxide 230 a and oxide 230b may be supplied. Alternatively, during the formation of oxide film 230C, In some cases, some of the oxygen contained in the sputtering gas may be supplied to the insulator 280. Therefore, the proportion of oxygen in the sputtering gas of oxide film 230C is preferably 70% or more. It should be 80% or more, more preferably 100%.

[0245] Next, heat treatment may be performed. Furthermore, this heat treatment may be carried out under reduced pressure and exposed to the atmosphere. The deposition of the insulating film 250A may be carried out continuously without interruption. Therefore, it removes moisture and hydrogen adsorbed on the surface of the oxide film 230C, and further oxidation The water and hydrogen concentrations in substance 230a, oxide 230b, and oxide film 230C are reduced. This can be done. The heat treatment temperature is preferably between 100°C and 400°C. In terms of form, the heat treatment temperature is set to 200°C.

[0246] Next, an insulating film 250A is deposited on the oxide film 230C (see Figure 9). The insulating film 250A is Thin films are deposited using methods such as sputtering, CVD, MBE, PLD, or ALD. It is possible. In addition, insulating film 250A is a gas in which the above-mentioned hydrogen atoms are reduced or removed. It is preferable to deposit the film using a film deposition method that utilizes a special agent. This allows for the hydrogen concentration of the insulating film 250A to be determined. This can reduce the amount of heat loss. The insulating film 250A is an insulator that comes into contact with the oxide 230c in a later process. Since the result is 250, it is preferable that the hydrogen concentration is reduced in this way.

[0247] Next, microwaves or high-frequency waves such as RF may be irradiated. The irradiated microwaves, Alternatively, high frequencies such as RF penetrate into the insulator 280, oxide 230b, and oxide 230a. Then, hydrogen is removed from these. In particular, oxides 230a and 230b Then, a reaction occurs in which the VoH bond is broken, or in other words, "V O H→Vo+H A reaction occurs, resulting in dehydrogenation. Some of the hydrogen produced at this time combines with oxygen. It may be removed as H2O from oxide 230 and insulator 280. In some cases, some of the hydrogen may be gettered by the conductor 242. In this way, micro By irradiating with waves or high-frequency waves such as RF, the insulator 280, oxide 230b, and acid The hydrogen concentration in compound 230a can be reduced.

[0248] Furthermore, by using microwaves or high-frequency waves such as RF to turn oxygen gas into plasma, oxygen radio waves are produced. A galvanic layer may be formed. That is, insulator 280, oxide 230b, and oxide 230a Plasma treatment may be performed in an atmosphere containing oxygen. Such treatment is described below. This is sometimes referred to as oxygen plasma treatment. Furthermore, the formed oxygen radicals cause the insulator 28 Oxygen can be supplied to oxide 230b and oxide 230a. Also, Plasma treatment of the edge material 280, oxide 230b, and oxide 230a in an oxygen-containing atmosphere. When performing the procedure, the oxide 230 is configured to be less susceptible to irradiation with microwaves or high-frequency waves such as RF. You can do that.

[0249] Furthermore, oxygen plasma treatment involves generating a high-density plasma using, for example, microwaves. It is preferable to use a microwave processing device that has a power source. The substrate side may have a power supply for applying RF. By using high-density plasma, high density It is possible to generate oxygen radicals by applying RF to the substrate side. The oxygen ions generated by the plasma are efficiently absorbed into the insulator 280 and oxide 230. This can be achieved. Furthermore, the above oxygen plasma treatment is preferably carried out under reduced pressure. The force is 60 Pa or more, preferably 133 Pa or more, more preferably 200 Pa or more, further Preferably, the pressure should be 400 Pa or higher. Also, the oxygen flow rate ratio (O2 / O2+Ar) should be 50 The process should be carried out at a concentration of % or less, preferably between 10% and 30%. The processing temperature should be, for example, 40°C. It is sufficient to perform the procedure at around 0°C. Furthermore, after oxygen plasma treatment, do not expose the product to the outside air. Further heat treatment may be performed.

[0250] Next, conductive films 260Aa and 260Ab are deposited (see Figure 10). Conductive film 2 The deposition of 60Aa and conductive film 260Ab was performed using sputtering, CVD, MBE, and P This can be done using methods such as LD or ALD. For example, the CVD method can be used. Preferred. In this embodiment, a conductive film 260Aa is formed using the ALD method, and then the CVD method is used. A conductive film 260Ab is formed using [this method].

[0251] Next, by CMP treatment, an oxide film 230C, an insulating film 250A, and a conductive film 260Aa are formed. By polishing the conductive film 260Ab until the insulator 280 is exposed, the oxide 230 c. Form an insulator 250 and a conductor 260 (conductor 260a and conductor 260b) (See Figure 11).

[0252] Next, heat treatment may be performed. In this embodiment, heat treatment is performed at a temperature of 400°C in a nitrogen atmosphere. The process is carried out for 1 hour. This heat treatment reduces the moisture content in the insulators 250 and 280. The temperature and hydrogen concentration can be reduced. Furthermore, after the above heat treatment, exposure to the atmosphere is not required. The deposition of the insulator 282 may be carried out continuously.

[0253] Next, on the conductor 260, on the oxide 230c, on the insulator 250, and on the insulator 280 , an insulator 282 is formed. The insulator 282 is deposited by sputtering, CVD, MB This can be done using methods such as the E method, PLD method, or ALD method (see Figure 12). Insulator As an insulating film that becomes 282, in particular, aluminum oxide is formed by sputtering. It is preferable to form a film. Using the sputtering method, in an oxygen-containing atmosphere, the insulator 282 By performing film formation, oxygen can be added to the insulator 280 while the film is being formed. It is preferable to deposit the insulator 282 while heating the substrate. Also, the conductor 26 By forming an insulator 282 in contact with the upper surface of 0, the insulator will be in contact with the upper surface of 0 during the subsequent heat treatment. This is preferable because it can suppress the absorption of oxygen from 280 into the conductor 260. stomach.

[0254] Next, an insulator 283 is formed on the insulator 282 (see Figure 13). Deposition of the insulator 283. This is done using sputtering, CVD, MBE, PLD, or ALD methods. This can be done. Furthermore, the insulator 283 may be multilayered. For example, by sputtering. A silicon nitride film is formed using [a specific method], and silicon nitride is then coated onto the silicon nitride using the CVD method. A film may be formed using this method.

[0255] Next, heat treatment may be performed. In this embodiment, heat treatment is performed at a temperature of 400°C in a nitrogen atmosphere. The process is carried out for 1 hour. This heat treatment causes the acid added by the film formation of the insulator 282 to be removed. The element is diffused into the insulator 280, and further, through the oxide 230c, the oxide 230a, and It can be supplied to oxide 230b. In this way, oxide 230 is subjected to oxygenation treatment. In this way, oxygen vacancies in oxide 230 (oxide 230b) are repaired by oxygen, in other words This can then accelerate the reaction "Vo + O → null". Furthermore, oxide 2 The oxygen supplied reacts with the hydrogen remaining in 30, removing the hydrogen as H2O. This allows (dehydration) the hydrogen remaining in oxide 230 to be acid Recombining into prime defects V O This can suppress the formation of H. This process may be carried out not only after the deposition of the insulator 283, but also after the deposition of the insulator 282.

[0256] Next, insulator 272, insulator 273, insulator 280, insulator 282, and insulator 28 3. An opening is formed that reaches the conductor 242b (see Figure 13). The formation of this opening is done by lithography. This can be done using the Graph method. Note that in Figure 13(A), the opening is circular in shape when viewed from above. However, this is not the only option. For example, if the opening is elliptical when viewed from above, Which shapes are roughly circular, quadrilaterals or other polygons, or quadrilaterals or other polygons with rounded corners? That's fine.

[0257] Next, an insulating film to become an insulator 241 is formed, and the insulating film is anisotropically etched to form an insulator. Forming 241. The insulating film that will become the insulator 241 is deposited by sputtering, CVD, This can be done using methods such as MBE, PLD, or ALD. The insulator 241 As the insulating film, it is preferable to use an insulating film that has the function of suppressing oxygen permeation. For example, it is preferable to deposit aluminum oxide using the PEALD method. Alternatively, It is preferable to deposit silicon nitride using the PEALD method. Silicon nitride is hydrogen It is preferable because it has high blocking properties.

[0258] Furthermore, as an anisotropic etching of the insulating film that becomes the insulator 241, for example, dry etching Methods such as the G method can be used. By providing an insulator 241 on the side wall of the opening, oxygen from the outside can be blocked. This suppresses the transmission of the conductive material and prevents oxidation of the conductive material 240 that is formed next. This prevents impurities such as water and hydrogen from diffusing from the body (body 240) to the outside.

[0259] Next, a conductive film that will become conductor 240 is formed. The conductive film that will become conductor 240 is made of water and hydrogen It is desirable to have a laminated structure that includes a conductor that has the function of suppressing the transmission of impurities. For example, tantalum nitride, titanium nitride, etc., and tungsten, molybdenum, copper, etc. It can be made into a laminate. The conductive film that will become the conductor 240 can be formed by sputtering, C This can be performed using methods such as the VD method, MBE method, PLD method, or ALD method.

[0260] Next, by performing CMP treatment, a portion of the conductive film that will become the conductor 240 is removed, and the insulator 2 The upper surface of 83 is exposed. As a result, the conductive film remains only in the opening, making the upper surface flat. A conductive material 240 can be formed (see Figure 13). Furthermore, this CMP treatment allows for the formation of a conductive material 240. A portion of the upper surface of the insulator 283 may be removed.

[0261] Next, a conductive film that will become conductor 246 is formed. The formation of the conductive film that will become conductor 246 is performed by This can be done using methods such as puttering, CVD, MBE, PLD, or ALD. can.

[0262] Next, the conductive film that will become the conductor 246 is processed by lithography, and the conductive film 240 A conductive material 246 is formed that is in contact with the upper surface (see Figure 14). Although not shown, a conductive material 246 In this case, the film thickness of the insulator 283 in the region that does not overlap with the insulator 283 may become thinner.

[0263] Next, an insulating film 284 is formed on the conductive material 246 and the insulating material 283 (see Figure 1). ). The insulator 284 is deposited by sputtering, CVD, MBE, PLD or A This can be done using methods such as the LD method. Furthermore, the insulator 284 may be multilayered. For example... Then, silicon nitride is deposited using the sputtering method, and CVD is applied to the silicon nitride. Silicon nitride may be deposited using the method. On the conductor 246 and on the insulator 283, By forming the insulator 284, the upper surface and the side surface of the conductor 246 are insulated. The edge 284 is in contact, and a portion of the lower surface of the conductor 246 is in contact with the insulator 283. In other words, it is conductive. Body 246 can be configured to be encased in insulators 284 and 283. By adopting such a configuration, the permeation of oxygen from the outside is suppressed, and oxidation of the conductor 246 is prevented. This is possible. Also, impurities such as water and hydrogen can diffuse from the conductor 246 to the outside. This is preferable because it can prevent this.

[0264] Next, an insulator 274 may be formed on the insulator 284 (see Figure 1). The insulator 274 is This is done using methods such as sputtering, CVD, MBE, PLD, or ALD. This is possible. In addition, the insulator 274 uses a gas in which the above-mentioned hydrogen atoms have been reduced or removed. It is preferable to form the film using the following film formation method. This reduces the hydrogen concentration of the insulator 274. It is possible.

[0265] Based on the above, a semiconductor device having the transistor 200 shown in Figure 1 can be fabricated. As shown in Figures 4 to 14, the method for manufacturing the semiconductor device shown in this embodiment is used. Thus, a semiconductor device having a transistor 200 and a capacitive element 100 can be fabricated. Cut.

[0266] <Modified examples of semiconductor devices> In the following, using Figures 2, 3, 15, 16, 17, 18, and 19, we will explain the previous A transistor according to one aspect of the present invention, which differs from the one shown in the <Example of Semiconductor Device Configuration>. 200 (transistors 200a and 200b), and capacitive element 100 An example of a semiconductor device having (capacitive elements 100a and 100b) will be described. The semiconductor equipment shown in Figures 2, 3, 15, 16, 17, 18, and 19 is... In this context, the structure of the semiconductor device (see Figure 1) shown in <Example of Semiconductor Device Configuration> Structures having the same function as transistor 2 will be denoted with the same reference numeral. Note that in this section, transistor 2 The constituent materials of 00 and the capacitive element 100 are described in detail in <Example of Semiconductor Device Configuration>. The materials used can be used.

[0267] <Example 1 of a semiconductor device> Figure 2(A) shows the top view of a semiconductor device having a transistor 200 and a capacitive element 100. Figure 2(B), Figure 2(C), and Figure 2(D) show cross-sections of the semiconductor device. This is a diagram. Here, Figure 2(B) is a cross-section of the area indicated by the dashed line A1-A2 in Figure 2(A). This is a diagram, and it is also a cross-sectional view of the transistor 200 and the capacitive element 100 in the channel length direction. Furthermore, Figure 2(C) is a cross-sectional view of the area shown by the dashed line A3-A4 in Figure 2(A). This is also a cross-sectional view of transistor 200 in the channel width direction. Furthermore, Figure 2(D) is a cross-sectional view of Figure 2( A) is a cross-sectional view of the area indicated by the dashed line A5-A6, and shows the channel width of the capacitive element 100. This is also a cross-sectional view. Note that in the top view of Figure 2(A), some elements have been omitted for clarity. It's omitted.

[0268] As shown in Figures 2(B) and (D), in this modified example, the cross-sectional shape of the capacitive element 100 is This differs from the capacitive element 100 shown in Figures 1(B) and (D). For details, see Figure 2(B), and As shown in Figure 2(D), the conductor 204b has a channel length direction and a channel width direction. An uneven surface is formed, and the insulator 222 on the conductor 204b is formed to conform to this uneven surface. By shaping it in this way, the conductor 20 functions as one electrode of the capacitive element 100. 4 and the conductor 242a, which functions as the other electrode of the capacitive element 100, The overlapping area via the insulator 222, which functions as a dielectric, is larger than the area viewed from above. This can be achieved by increasing the overlapping area between one electrode and the other electrode in a top view. Since the capacitance of the capacitive element 100 can be increased without any modifications, the capacitive element can be miniaturized.

[0269] To form the uneven surface of the conductor 204b as shown in Figures 2(B) and (D), for example, As shown in Figures 1(B) and (D), the upper surface of the conductor 204b is flat. After forming the material, the conductor 204b can be given a textured surface by lithography. Furthermore, in this modified example, irregularities are formed in both the channel length direction and the channel width direction. However, this is not always the case. For example, it is also possible to form irregularities only in the direction of the channel length, or The unevenness may be formed only in the width direction of the panel. The same applies to the number of unevennesses. Furthermore, the direction or number of bumps is determined according to the capacitance of the capacitive element required by the semiconductor device. It should be formed as is. For other configurations and effects, see Figures 1(A), (B), (C), etc. The example of semiconductor device configuration shown in (D) can be considered.

[0270] <Modified example of a semiconductor device 2> Figure 3(A) shows the top view of a semiconductor device having a transistor 200 and a capacitive element 100. This is a diagram. Figures 3(B), 3(C), and 3(D) show cross-sections of the semiconductor device. This is a diagram. Here, Figure 3(B) is a cross-section of the area indicated by the dashed line A1-A2 in Figure 3(A). This is a diagram, and it is also a cross-sectional view of the transistor 200 and the capacitive element 100 in the channel length direction. Furthermore, Figure 3(C) is a cross-sectional view of the area shown by the dashed line A3-A4 in Figure 3(A). This is also a cross-sectional view of transistor 200 in the channel width direction. Furthermore, Figure 3(D) is a cross-sectional view of Figure 3( A) is a cross-sectional view of the area indicated by the dashed line A5-A6, showing the source of transistor 200. Alternatively, it is a cross-sectional view of the drain channel in the width direction. Note that in the top view of Figure 2(A), the figure Some elements have been omitted for clarity.

[0271] As shown in Figure 3(A), the conductor 205 is connected to the second gate of the transistor 200, and This configuration is also used as one electrode of the quantitative element 100, and also as part of the transistor 200. Conductor 242b, which functions as a source electrode or drain electrode, and conductor 204 are open The configuration is connected via port 238, and also the source electrode of transistor 200 A conductor 240 that functions as a plug to connect to the drain electrode, and a conductor 240 that connects to the drain electrode. A configuration that does not have a conductor 246 and an insulator 241 in contact with the side surface of the conductor 240. In one place, the semiconductor device configuration example shown in Figures 1(A), (B), (C), and (D) They are different. Details about the different configurations are described below.

[0272] As shown in Figure 3(B), the capacitive element 100 has a conductive material 205 on the insulator 214 and a conductive material It has an insulator 222 on the body 205 and a conductor 242a on the insulator 222.

[0273] In the capacitive element 100, the conductor 205 functions as one electrode of the capacitive element 100. The conductor 242a functions as the other electrode of the capacitive element 100. Also, the insulator 222 It functions as a dielectric for the capacitive element 100.

[0274] Furthermore, as shown in Figure 3(D), the conductor 204 on the insulator 214 and the conductor 242b However, they are connected through the opening 238. Conductor 204 is formed in the same layer as conductor 205. This is achieved. Also, as shown in Figure 3(A), the conductor 204 is connected to the conductor 205 and A1-A2 They are arranged parallel to the direction.

[0275] With the above configuration, the conductors 240 and 246 function as plugs. The process of forming the insulator 241 is eliminated, and the transistor 200 and the capacitive element 100 The manufacturing process for semiconductor devices having this feature is simplified, thus reducing manufacturing costs and yield. This is desirable because improvement can be expected.

[0276] Other configurations and effects are shown in Figures 1(A), (B), (C), and (D). Examples of semiconductor device configurations can be considered.

[0277] <Modified example of semiconductor device 3> In the following, transistors 200a, 200b, and capacitance according to one aspect of the present invention are described. An example of a semiconductor device having element 100a and capacitive element 100b will be described.

[0278] Figure 16 shows transistor 200a, transistor 200b, capacitive element 100a, and This is a cross-sectional view in the channel length direction of a semiconductor device having a capacitive element 100b. The semiconductor device is As shown in Figure 16, the structure is symmetrical with respect to the dashed line between A3 and A4. Either the source electrode or the drain electrode of transistor 200a, and transistor 200b The source electrode or drain electrode is configured to also function as the conductor 242c. Also included are a conductor 246 that functions as wiring, a transistor 200a, and a transistor The conductor 240, which also functions as a plug, is configured to connect to 200b. As described above, the connection between the two transistors, two capacitive elements, and the wiring and plug is constructed as follows: By achieving this, it is possible to provide semiconductor devices that can be miniaturized or highly integrated.

[0279] Transistor 200a, transistor 200b, capacitive element 100a, and capacitive element 1 The respective components and effects of 00b are shown in Figures 1(A), (B), (C), and (D). The example configuration of the semiconductor device shown can be used as a reference.

[0280] <Modification 4 of semiconductor device> In the above, transistor 200a and transistor 20 are used as examples of semiconductor device configurations. Although 0b, capacitance element 100a, and capacitance element 100b have been mentioned, the semiconductor shown in this embodiment... The apparatus is not limited to this. For example, as shown in Figure 17, two devices with a similar configuration may be used. The semiconductor device may be configured to be connected via a capacitive section. In this specification, Transistor 200a, transistor 200b, capacitive element 100a, and capacitive element 100b A semiconductor device having these components is called a cell. Transistor 200a, Transistor 200b, Capacity The configuration of the capacitance element 100a and the capacitance element 100b is as described above for transistor 200a. , refer to the descriptions relating to transistor 200b, capacitive element 100a, and capacitive element 100b. It is possible.

[0281] Figure 17 shows transistor 200a, transistor 200b, capacitive element 100a, and Cell 60 having a capacitive element 100b and cell 61 having the same configuration as cell 60 are the capacitive parts This is a cross-sectional view connected via [a certain method].

[0282] As shown in Figure 17, it functions as one electrode of the capacitive element 100b of cell 60. Conductor 204_2 and conductor 242b, which functions as the other electrode, are similar to cell 60. The configuration of the cell 61 having a capacitive element is such that one electrode and the other electrode are combined. Furthermore, although not shown in the diagram, one electrode of the capacitive element 100a of cell 60 is The functional conductor 204_1 and the other conductor 242a, which functions as an electrode, are located in cell 60 On the left side, that is, in Figure 17, one electrode of the capacitive element of the semiconductor device adjacent in the A1 direction It also serves as the other electrode. Furthermore, on the right side of cell 61, that is, in Figure 17, A2 The same configuration applies to the directional cells. In other words, the configuration of the cell array 600 is... This is possible. By configuring the cell array 600 in this way, the spacing between adjacent cells can be reduced. This allows for a reduction in the projected area of ​​the cell array 600, enabling high integration. This becomes possible. In addition, the configuration of the cell array 600 shown in Figure 17 can be arranged in a matrix. This allows for the construction of a matrix-like cell array.

[0283] As described above, in the configuration shown in this embodiment, transistor 200a, transistor 20 By forming 0b, capacitive element 100a and capacitive element 100b, the cell area is reduced. This reduces the size and allows for miniaturization or high integration of semiconductor devices having cell arrays.

[0284] Furthermore, the cell array 600 may be configured not only as a flat surface but also as a stacked structure. Figure 18 shows the cell array. This shows a cross-sectional view of a configuration in which n+1 layers of Luar Array 600 are stacked. As shown in Figure 18, multiple cells By stacking luar arrays, cells can be integrated without increasing the occupied area of ​​the cell array. They can be arranged in this way. In other words, a 3D cell array can be constructed.

[0285] <Modified example of a semiconductor device 5> Below, we will describe an example of a semiconductor device having a 3D cell array as shown in Figure 18. Figure 19 shows a cross-sectional view of the semiconductor device. The semiconductor device consists of a substrate 311 and on the substrate 311. The insulator 211, the insulator 212 on the insulator 211, and the insulator 214 on the insulator 212 , and furthermore, a 3D cell array 600 is stacked in n+1 layers on the insulator 214. A cell array is positioned. Furthermore, the stacked cell array 600 functions as a plug. It is electrically connected by a conductor 240. Also, the 3D cell array is insulated by an insulator 211. Insulator 212, insulator 214, insulator 287, insulator 282, insulator 283, and insulation It is sealed by the body 284 (for convenience, this will be referred to as the sealing structure below). Around the insulator 284 An insulator 274 is provided there. Also, insulator 274, insulator 284, insulator 283, A conductor 430 is provided on the insulator 211, and it is electrically connected to the substrate 311.

[0286] Furthermore, an insulator 280 is provided inside the sealing structure. The insulator 280 is heated It has the function of releasing oxygen. Alternatively, the insulator 280 has an excess oxygen region.

[0287] Furthermore, insulators 211, 283, and 284 block hydrogen. It is preferable that the material has high functionality. Also, insulator 214, insulator 282, and The insulator 287 is preferably a material that has the function of capturing or fixing hydrogen. be.

[0288] For example, materials that have high blocking properties for hydrogen include silicon nitride. Alternatively, silicon nitride and the like are examples. Furthermore, the above hydrogen capture or hydrogen fixation Materials having the function of aluminum oxide, hafnium oxide, and aluminum Examples include hafnium-containing oxides (hafnium aluminate).

[0289] In this specification, barrier properties refer to the function of suppressing the diffusion of the corresponding substance (permeability). It is said that the amount is low. Alternatively, it captures and fixes the corresponding substance (gettarin). (Also known as "g") This function is intended to be used.

[0290] Note that insulators 211, 212, 214, 287, 282, and There are no particular limitations on the crystal structure of the materials used for the edge body 283 and the insulator 284. The structure may be amorphous or crystalline. For example, a structure that captures hydrogen or solidifies hydrogen. As a material having the function of adhesion, an amorphous aluminum oxide film is preferable. Crystalline aluminum oxide is better at capturing hydrogen than highly crystalline aluminum oxide, and In some cases, a large amount of material may adhere to the surface.

[0291] Here, the excess oxygen in the insulator 280 is replaced by hydrogen in the oxide semiconductor in contact with the insulator 280. The following model can be considered for diffusion.

[0292] Hydrogen present in the oxide semiconductor can be transmitted to other materials via the insulator 280 in contact with the oxide semiconductor. It diffuses into the structure. This hydrogen diffusion occurs when excess oxygen in the insulator 280 is absorbed into the oxide semiconductor. It reacts with hydrogen to form an OH bond and diffuses through the insulator 280. The hydrogen atom having an OH bond , a material having the function of capturing or fixing hydrogen (typically, an insulator 282) Upon arrival, the hydrogen atom bonded with an atom in the insulator 282 (for example, a metal atom) in the acid. It reacts with elementary atoms and is captured or fixed in insulator 282. On the other hand, it had an OH bond. It is presumed that the excess oxygen atoms remain in the insulator 280 as excess oxygen. In the diffusion of hydrogen, there is a high probability that the excess oxygen in the insulator 280 plays a bridging role. stomach.

[0293] To satisfy the above model, the semiconductor device manufacturing process is one of the important elements. .

[0294] As an example, an insulator 280 having excess oxygen is formed on an oxide semiconductor, and then an insulating A marginal body 282 is formed. After that, it is preferable to perform a heat treatment. This heat treatment is Specifically, in an atmosphere containing oxygen, an atmosphere containing nitrogen, or a mixed atmosphere of oxygen and nitrogen. The heating process should be carried out at a temperature of 350°C or higher, preferably 400°C or higher. The heating time should be at least 1 hour. Preferably, the incubation period is 4 hours or longer, and more preferably 8 hours or longer.

[0295] As a result of the above heat treatment, hydrogen in the oxide semiconductor is released into insulator 280, insulator 282, It can diffuse outward through the insulator 287. In other words, oxide semiconductor, The absolute amount of hydrogen present near the oxide semiconductor can be reduced.

[0296] After the above heat treatment, insulators 283 and 284 are formed. Furthermore, insulator 284 is a material that has high blocking properties for hydrogen, therefore, external Hydrogen diffused in one direction, or hydrogen present externally, is introduced into the interior, specifically into an oxide semiconductor. Alternatively, it can prevent it from entering the insulator 280.

[0297] Regarding the above heat treatment, the configuration performed after the formation of the insulator 282 is as follows: The examples given are not limited to these. For example, cell array 600_1 to cell array 600 The above heat treatment may be performed after each of the formations of _n+1. Hydrogen is from above or to the side. It spreads in that direction.

[0298] Furthermore, by using the above manufacturing process, the insulator 211 and the insulator 283 are bonded together. This process forms the aforementioned sealing structure.

[0299] As described above, by using the above structure and manufacturing process, the hydrogen concentration is reduced. A semiconductor device using a specially selected oxide semiconductor can be provided. Therefore, it has good reliability. A semiconductor device can be provided. Furthermore, according to one aspect of the present invention, good electrical characteristics can be obtained. We can provide a semiconductor device that does this.

[0300] The configurations, methods, etc. shown in this embodiment may differ from the configurations, structures, methods, etc. shown in other embodiments. They can be used in combination as appropriate.

[0301] (Embodiment 2) In this embodiment, one form of a semiconductor device will be described with reference to Figure 20.

[0302] [Storage device 1] The memory device shown in Figure 20 consists of a transistor 200, a capacitive element 100, and a transistor Figure 20 shows transistor 200 and transistor 300. This is a cross-sectional view along the channel length.

[0303] Transistor 200 is a transistor in which a channel is formed in a semiconductor layer having an oxide semiconductor. It is a transistor. Transistor 200 is used in memory devices because it has a low off-current. This makes it possible to retain memory content for a long period of time. In other words, refresh Because it does not require any operation, or because the refresh operation is performed very infrequently, the memory Power consumption can be significantly reduced.

[0304] In the storage device shown in Figure 20, the wiring 1001 is the source and source of transistor 300. Electrically connected to one side of the rain, wiring 1002 is the source and source of transistor 300. Electrically connected to the other side of the rain, wiring 1007 is electrically connected to the gate of transistor 300. It is connected to the source and drain of transistor 200. Electrically connected to one side, the wiring 1004 is electrically connected to the first gate of transistor 200. The wiring 1006 is connected and electrically connected to the second gate of transistor 200. Furthermore, the wiring 1005 is electrically connected to the other electrode of the capacitive element 100.

[0305] The semiconductor device shown in Figure 20 has channels formed in a semiconductor layer having an oxide semiconductor. It can be applied to a memory device equipped with a transistor. The off-current of transistor 200 is Because it is small and has the characteristic of being able to maintain the potential of one electrode of the capacitive element 100, information It is possible to write, hold, and read data.

[0306] <Structure of storage device 1> A semiconductor device according to one aspect of the present invention, as shown in Figure 20, is a transistor 300, It has a transistor 200 and a capacitive element 100. Transistor 200 is a transistor 300 Located at the top, the transistor 200 and the capacitive element 100 are arranged on the same layer. Regarding the configuration of the transistor 200 and the capacitive element 100, please refer to the previous embodiment. It is possible to pour drinks.

[0307] The transistor 300 is mounted on the substrate 311 and consists of a conductor 316, an insulator 315, and the substrate A semiconductor region 313 consisting of part of 311, and a source region or drain region. It has a low-resistance region 314a and a low-resistance region 314b.

[0308] Transistor 300 can be either a p-channel or n-channel type.

[0309] The region in which the channel of the semiconductor region 313 is formed, the region near it, the source region, or In the low-resistance region 314a and low-resistance region 314b, which are the drain region, It is preferable that the semiconductor contains a condensate semiconductor, and it is preferable that it contains single crystal silicon. Alternatively, Ge (germanium), SiGe (silicon germanium), GaAs (gallium carbonate). Even if formed from materials containing gallium aluminum arsenide (GALAs), etc. Good. By applying stress to the crystal lattice and changing the lattice spacing, the effective mass of silicon is controlled. A configuration using this may also be used. Alternatively, by using GaAs and GaAlAs, etc., transition The 300 is HEMT (High Electron Mobility Transit) You can also use stor.

[0310] Low-resistance regions 314a and 314b are semiconductor regions applied to semiconductor region 313. In addition to conductive materials, elements that impart n-type conductivity, such as arsenic and phosphorus, or p-type conductivity, such as boron, are also used. It contains elements that impart conductivity to the type.

[0311] The conductor 316, which functions as a gate electrode, imparts n-type conductivity to arsenic, phosphorus, etc. Semiconductor materials such as silicon containing elements, or elements that impart p-type conductivity, such as boron. Conductive materials such as cellulose, metallic materials, alloy materials, or metal oxide materials can be used. .

[0312] Furthermore, since the work function is determined by the material of the conductor, by changing the material of the conductor, The threshold voltage can be adjusted. Specifically, titanium nitride or tantalum nitride can be used as the conductor. It is preferable to use materials such as the above. Furthermore, in order to achieve both conductivity and embedding properties, a conductor It is preferable to use metal materials such as tungsten or aluminum as laminates, and in particular Using tungsten is preferable in terms of heat resistance.

[0313] Note that the transistor 300 shown in Figure 20 is just one example, and its structure is not limited to that example. A suitable transistor should be used depending on the configuration and driving method.

[0314] The transistor 300 is covered with insulators 320, 322, 324, and The edge members 326 are arranged in a series of stacked layers.

[0315] For example, acid Silicon oxide, silicon nitride, silicon nitride, silicon nitride, aluminum oxide, Aluminum oxide nitride, aluminum nitride oxide, aluminum nitride, etc., can be used.

[0316] The insulator 322 provides a step created by the transistor 300 and the like located below it. It may also function as a planarizing film that flattens the surface. For example, the upper surface of the insulator 322 is To improve flatness, the surface is flattened using a planarization treatment such as chemical mechanical polishing (CMP). It's fine if you do that.

[0317] Furthermore, the insulator 324 receives transistors from the substrate 311 or the transistor 300, etc. A barrier film is provided in the region where the STA200 is installed, so as not to diffuse hydrogen or impurities. It is preferable to use it.

[0318] As an example of a film that has barrier properties against hydrogen, for example, silica nitride formed by CVD A semiconductor can be used. Here, a semiconductor having an oxide semiconductor such as transistor 200 can be used. Hydrogen diffusion into the semiconductor element can degrade its properties. Therefore, A film that suppresses hydrogen diffusion is used between transistor 200 and transistor 300. Preferably, a membrane that suppresses hydrogen diffusion is a membrane that has a low hydrogen desorption rate. do.

[0319] The amount of hydrogen desorption can be analyzed, for example, using a thermodynamic desorption gas analysis (TDS) method. Yes, it is possible. For example, the amount of hydrogen desorption from insulator 324 can be determined by TDS analysis when the film surface temperature is In the range of 50°C to 500°C, the amount of desorption converted to hydrogen atoms is the area of ​​the insulator 324. Converted to a single win, 10 x 10 15 atoms / cm 2 The following is preferably 5 × 10 15 a toms / cm 2 The following is acceptable.

[0320] Furthermore, it is preferable that the dielectric constant of the insulator 326 is lower than that of the insulator 324. For example, The relative permittivity of the edge material 326 is preferably less than 4, and more preferably less than 3. Also, for example, an insulator... The relative permittivity of 326 is preferably 0.7 times or less, and preferably 0.6 times or less, than the relative permittivity of the insulator 324. This is more preferable. By using a material with a low dielectric constant as the interlayer film, the parasitic capacitance that occurs between the wiring is reduced. It can be reduced.

[0321] Furthermore, insulators 320, 322, 324, and 326 have transients The conductor 328 and conductor 330, etc., which are electrically connected to the sta 300, are embedded within. Furthermore, conductors 328 and 330 function as plugs or wiring. Conductors that function as plugs or wires group together multiple structures and assign them the same code. In some cases, this may occur. Also, in this specification, etc., the wiring and the plug that electrically connects to the wiring are It may be a single unit. That is, when a part of the conductor functions as wiring, and conductive In some cases, a part of the body can function as a plug.

[0322] The material for each plug and wiring (conductor 328, conductor 330, etc.) is metal. Conductive materials such as materials, alloy materials, metal nitride materials, or metal oxide materials are used in a single layer or These can be used in stacked form. Tungsten and molybdenum, which offer both heat resistance and conductivity, are suitable. It is preferable to use any high melting point material, and tungsten is preferred. It is preferable to form it with a low-resistance conductive material such as aluminum or copper. Low-resistance conductive material By using this material, the wiring resistance can be reduced.

[0323] A wiring layer may be provided on the insulator 326 and the conductor 330. For example, as shown in Figure 20. The insulator 350, insulator 352, and insulator 354 are arranged in a sequential stacked configuration. Furthermore, a conductor 356 is formed on insulators 350, 352, and 354. Conductor 356 functions as a plug or wiring. It can be provided using the same material as conductors 328 and 330.

[0324] Furthermore, for example, insulator 350 has a barrier property against hydrogen, similar to insulator 324. It is preferable to use an insulator. Furthermore, the conductor 356 has barrier properties against hydrogen. It is preferable to include a conductor. In particular, it is preferable to include an insulator 350 that has barrier properties against hydrogen. A conductor having a barrier property against hydrogen is formed in the opening. With this configuration, The transistor 300 and the transistor 200 can be separated by a barrier layer. This can suppress the diffusion of hydrogen from transistor 300 to transistor 200.

[0325] For example, tantalum nitride can be used as a conductor that has barrier properties against hydrogen. It would be good to do so. Also, by laminating tantalum nitride and highly conductive tungsten, the wiring can be made It is possible to suppress the diffusion of hydrogen from transistor 300 while maintaining conductivity. In this case, the tantalum nitride layer having barrier properties against hydrogen has barrier properties against hydrogen It is preferable that the structure is in contact with an insulator 350 having the following properties.

[0326] In the above, a wiring layer including a conductor 356 was described, but according to this embodiment... The memory device is not limited to this. A wiring layer similar to the wiring layer containing the conductor 356 is also used. You may use fewer than one layer, or you may use five or more wiring layers similar to the wiring layer containing conductor 356. stomach.

[0327] Insulators 210, 212, and 214 are stacked in order on insulator 354. It is provided as follows: Insulator 210, insulator 212, and insulator 214 are acid It is preferable to use a material that has barrier properties against elements and hydrogen.

[0328] For example, the same material as the insulator 320 can be used for the insulator 210. By using a material with a relatively low dielectric constant as the interlayer film, parasitic capacitance between wiring can be reduced. Yes, it is possible. For example, as the insulator 212, a silicon oxide film or a silicon oxide nitride film can be used. It is possible.

[0329] Insulators 211 and 212 are, for example, connected to a substrate 311 or a transistor 3 Hydrogen and impurities diffuse from the region where 00 is provided to the region where transistor 200 is provided. It is preferable to use a film that has barrier properties that are not present. Therefore, similar to insulator 324. Materials can be used.

[0330] As an example of a film with hydrogen barrier properties, silicon nitride formed by CVD is used. It is possible to have a semiconductor device having an oxide semiconductor such as transistor 200. The properties of the semiconductor device may deteriorate due to the diffusion of hydrogen. Therefore, transient It is preferable to use a film that suppresses hydrogen diffusion between the sta 200 and the transistor 300. Specifically, a membrane that suppresses hydrogen diffusion is a membrane that releases less hydrogen.

[0331] Furthermore, as a film having barrier properties against hydrogen, for example, the insulator 214 contains aluminum oxide. It is preferable to use metal oxides such as nium, hafnium oxide, and tantalum oxide.

[0332] In particular, aluminum oxide is a source of oxygen and water, which can cause variations in the electrical properties of transistors. It has a high barrier effect that prevents both elements and impurities such as water from passing through the membrane. Therefore, Aluminum oxide is affected by hydrogen, moisture, etc. during and after the transistor fabrication process. This prevents impurities from entering transistor 200. Also, transistor 2 The release of oxygen from the oxides that make up 00 can be suppressed. Therefore, the transient It is suitable for use as a protective film for Ta200.

[0333] Also, insulators 210, 211, 212, 214, and 21 6 includes a conductor 218, a conductor constituting the transistor 200, and a capacitive element 1 Conductors and the like that make up 00 are embedded. Note that the conductor 218 is transistor 20 A plug or wire that electrically connects to transistor 300. The conductor 218 is provided using the same material as the conductors 328 and 330. It is possible.

[0334] In particular, the conductor 218 in the region in contact with the insulator 210 and the insulator 214 is oxygen, hydrogen Preferably, the material is a conductor that has barrier properties against water. With this configuration, The Rangista 300 and Transistor 200 have barrier properties against oxygen, hydrogen, and water. In the layer having it, it can be separated, and hydrogen from transistor 300 to transistor 200 This can suppress the spread of [the substance].

[0335] A transistor 200 and a capacitive element 100 are provided above the insulator 214. The structures of the transistor 200 and the capacitive element 100 will be described in the previous embodiment. The transistor 200 and the capacitive element 100 shown in Figure 20 can be used. The transistor 200 and the capacitive element 100 are examples and are not limited to their structure, and the circuit structure may also be used. Appropriate transistors and capacitive elements should be used depending on the configuration and driving method.

[0336] Furthermore, by providing the conductor 240 in contact with the conductor 218, the transistor 300 The conductor connected to it can be brought out above transistor 200. For example, wiring 1002 was brought out above transistor 200, but this is not the only option. The configuration involves bringing out wiring 1001 or wiring 1007, etc., above transistor 200. You may do so.

[0337] The above is a description of the example configuration. By using this configuration, a tortoise having an oxide semiconductor can be constructed. In semiconductor devices using transistors, the aim is to suppress fluctuations in electrical characteristics and improve reliability. It can be raised.

[0338] The configurations, methods, etc. shown in this embodiment may differ from the configurations, structures, methods, etc. shown in other embodiments. They can be used in combination as appropriate.

[0339] (Embodiment 3) In this embodiment, using Figures 22 and 23, we will explain one aspect of the present invention in which an oxide is semi-oxidized. The transistor used as the conductor (which may be referred to as an OS transistor below), and the capacitance element This section explains the storage device to which the child is applied (hereinafter sometimes referred to as the OS memory device). The OS memory device includes at least a capacitive element and an OS transistor that controls the charging and discharging of the capacitive element. This is a memory device that has a zistor. The off-current of the OS transistor is extremely small, so the OS Memory devices possess excellent retention characteristics and can function as non-volatile memory.

[0340] Generally, semiconductor devices such as computers use various types of storage devices (memory) depending on the application. This is used. Figure 21 shows various storage devices in order of hierarchy. Storage devices located in the upper layers are Extremely fast access speeds are required, and lower-level memory devices have larger storage capacities and higher recording capabilities. The density can be calculated. In Figure 21, starting from the top layer, the arithmetic processing units such as the CPU have registers. Memory that is mixed in as such, SRAM (Static Random Access Memory) mory), DRAM (Dynamic Random Access Memory) This indicates 3D NAND memory.

[0341] Memory embedded as registers in processing units such as CPUs is used for temporary storage of calculation results. Because it is used in such applications, it is frequently accessed by the processing unit. Therefore, rather than memory capacity... Fast operating speed is required. Also, registers hold configuration information for the arithmetic processing unit. It also has functions.

[0342] SRAM is used, for example, as a cache. The cache is held in main memory. It has the function of duplicating and storing some of the information it holds. Frequently used data is cached. By creating a copy, you can increase the speed of data access.

[0343] DRAM is used, for example, in main memory. Main memory reads from storage. It has the function of retaining the programs and data that are released. The recording density of DRAM is approximately 0.1~0.3Gbit / mm 2 That is the case.

[0344] 3D NAND memory is used, for example, in storage. Storage is for long-term storage. It has the function of holding necessary data and various programs used by the processing unit. Therefore, storage requires a large storage capacity and high recording density rather than just high operating speed. The recording density of storage devices used for storage is approximately 0.6 to 6.0 Gbit / m². m 2 That is the case.

[0345] A storage device according to one aspect of the present invention has a high operating speed and can retain data for a long period of time. A storage device according to one aspect of the invention has a hierarchy in which the cache is located and a hierarchy in which the main memory is located. It can be suitably used as a storage device located in the boundary region 901 which includes both. A storage device according to one aspect of the present invention comprises a hierarchical layer in which the main memory is located and a hierarchical layer in which the storage is located. It can be suitably used as a storage device located in the boundary region 902 which includes both of the above.

[0346] <Example of a storage device configuration> Figure 22(A) shows an example of the configuration of the OS memory device. The storage device 1400 is connected to peripheral circuit 1 It has 411 and a memory cell array 1470. Peripheral circuit 1411 is row circuit 142 It has a 0, a column circuit 1430, an output circuit 1440, and a control logic circuit 1460.

[0347] The column circuit 1430 includes, for example, a column decoder, a precharge circuit, a sense amplifier, and a writing It has a power supply circuit, etc. The precharge circuit has the function of precharging the wiring. The amplification amplifier has the function of amplifying the data signal read from the memory cell. The above wiring is connected to the memory cells of the memory cell array 1470. More details will be provided later. The amplified data signal is output via the output circuit 1440. It is output to the outside of the storage device 1400 as RDATA. Also, the row circuit 1420 is, for example It has a row decoder, a word line driver circuit, etc., and can select the row to access. ru.

[0348] The storage device 1400 receives a low power supply voltage (VSS) from an external source as the power supply voltage, and peripheral circuits 14 The high power supply voltage (VDD) for 11 and the high power supply voltage (VIL) for the memory cell array 1470 are It is supplied. In addition, the storage device 1400 contains control signals (CE, WE, RE) and address signals. The address signal ADDR and the data signal WDATA are input from an external source. The address signal ADDR is the line The WDATA signal is input to the decoder and column decoder, and then input to the writing circuit.

[0349] The control logic circuit 1460 processes external input signals (CE, WE, RE). It then generates control signals for the row decoder and column decoder. CE is the chip enable signal. WE is the write enable signal, and RE is the read enable signal. The signals processed by the control logic circuit 1460 are not limited to these. If necessary, you can input other control signals.

[0350] The memory cell array 1470 consists of multiple memory cells MC arranged in a matrix, and multiple It has the wiring. Note that the wiring connecting the memory cell array 1470 and the row circuit 1420 The number of lines is determined by the configuration of the memory cell MC, the number of memory cell MCs in a single row, and other factors. Also, the number of wires connecting the memory cell array 1470 and the column circuit 1430 is noted. This is determined by factors such as the configuration of the recell MC and the number of memory cell MCs in each row.

[0351] In Figure 22(A), the peripheral circuit 1411 and the memory cell array 1470 are on the same plane. Although an example of formation on a surface has been shown, this embodiment is not limited to this. As shown in Figure 22(B), a memory cell array 14 is placed on top of a portion of the peripheral circuit 1411. 70 may be provided so as to overlap. For example, it may overlap below the memory cell array 1470. As such, a configuration that includes a sense amplifier may also be used.

[0352] Figures 23(A) to (C) show examples of memory cell configurations applicable to the above-mentioned memory cell MC. I will explain.

[0353] [DOSRAM] Figures 23(A) to (C) show examples of circuit configurations for DRAM memory cells. In this context, DRAM using a 1OS transistor 1 capacitance element type memory cell is used in DOSRA M(Dynamic Oxide Semiconductor Random Acc It is sometimes called a memory cell. As shown in Figure 23(A), memory cell 1471 is It has a transistor M1 and a capacitive element CA. Note that transistor M1 is a gate It has a front gate (sometimes called a front gate) and a rear gate.

[0354] The first terminal of transistor M1 is connected to the first terminal of capacitive element CA, and transistor M The second terminal of 1 is connected to wiring BIL, and the gate of transistor M1 is connected to wiring WOL. Next, the back gate of transistor M1 is connected to wiring BGL. Capacitive element C The second terminal of A is connected to wiring CAL.

[0355] Wiring BIL functions as a bit line, and wiring WOL functions as a word line. CAL functions as wiring for applying a predetermined potential to the second terminal of the capacitive element CA. During data writing and reading, a low-level potential is applied to the wiring CAL. It is preferable to do so. Wiring BGL is used to apply potential to the back gate of transistor M1. It functions as wiring. By applying an arbitrary potential to wiring BGL, the transistor The threshold voltage of M1 can be increased or decreased.

[0356] Furthermore, the memory cell MC is not limited to memory cell 1471, and the circuit configuration can be changed. This is possible. For example, the memory cell MC is like the memory cell 1472 shown in Figure 23(B) In this configuration, the back gate of transistor M1 is connected to the WOL wiring instead of the BGL wiring. It may also be made into a memory cell MC, as shown in Figure 23(C) As shown in 73, a single-gate transistor, that is, a transistor without a back gate, It may also be a memory cell composed of ZISTA M1.

[0357] When the semiconductor device shown in the above embodiment is used as a memory cell 1471, etc., a transistor Transistor 200 is used as M1, and capacitive element 100 is used as capacitive element CA. This can be done. By using an OS transistor as transistor M1, the transistor The leakage current of the M1 can be made very low. In other words, the written data can be transmitted Because it can be retained for a long time by ZISTA M1, the frequency of memory cell refresh is reduced. This can reduce the amount of memory required. Furthermore, it eliminates the need for memory cell refresh operations. It can be done. Also, because the leakage current is very low, memory cell 1471, memory cell 1472, The memory cell 1473 can hold multi-level data or analog data.

[0358] Furthermore, in DOSRAM, as described above, overlaps below the memory cell array 1470 As shown, by using a configuration that includes a sense amplifier, the bit line can be shortened. This reduces the bit line capacitance and thus the memory cell retention capacity.

[0359] The configurations, methods, etc. shown in this embodiment may differ from the configurations, structures, methods, etc. shown in other embodiments. They can be used in combination as appropriate.

[0360] (Embodiment 4) This embodiment is an electronic component and electrical device incorporating the storage device shown in the above embodiment. An example of a sub-device is shown.

[0361] <Electronic Components> First, see Figures 24(A) and (B) for an example of an electronic component incorporating the memory device 1000. We will use this to provide an explanation.

[0362] Figure 24(A) shows the electronic component 700 and the circuit board on which the electronic component 700 is mounted (mounted circuit board 70 A perspective view of 4) is shown. The electronic component 700 shown in Figure 24(A) is stored in the mold 711. It has a storage device 1000. The storage device 1000 also has a drive circuit layer 1500 and multiple memory devices. It has a memory layer 1200 having a molysel array. Figure 24(A) shows the electronic component 700 Some parts have been omitted to show the parts. Electronic component 700 is run on the outside of mold 711. It has a land 712. Land 712 is electrically connected to electrode pad 713, and electrode pad 7 13 is electrically connected to the memory device 1000 by wire 714. Electronic component 70 0 is mounted on, for example, printed circuit board 702. Multiple such electronic components are combined. Then, each component is electrically connected on the printed circuit board 702, completing the mounting board 704. do.

[0363] Figure 24(B) shows a perspective view of electronic component 730. Electronic component 730 is SiP (System Integrity Packaging). em in package) or MCM (Multi Chip Module) This is just one example. The electronic component 730 is embedded on the package substrate 732 (printed circuit board). An interposer 731 is provided, and a semiconductor device 735 and multiple memory devices are placed on the interposer 731. Device 1000 is provided.

[0364] In electronic component 730, the memory device 1000 is a high-bandwidth memory (HBM). An example of its use as width memory is shown. Also, semiconductor device 735 is Integrated circuits (semiconductor devices) such as CPUs, GPUs, and FPGAs can be used.

[0365] The package substrate 732 is a ceramic substrate, a plastic substrate, or a glass epoxy substrate. A substrate can be used. Interposer 731 is a silicon interposer, resin A lipid interposer or similar device can be used.

[0366] The interposer 731 has multiple wirings and powers multiple integrated circuits with different terminal pitches. It has the function of connecting electrically. Multiple wires are provided in single layer or multi-layer configuration. Also, The interposer 731 packages the integrated circuit provided on the interposer 731 to the package substrate 7 It has the function of electrically connecting to the electrode provided at 32. Interposer is sometimes called a "redistribution board" or "intermediate board." Also, interposer 73 A through electrode is provided in 1, and the integrated circuit and the package substrate 732 are electrically connected using the through electrode. In some cases, it may be connected to a silicon interposer. Also, in silicon interposers, TSVs are used as through electrodes. It is also possible to use (through silicon vias).

[0367] It is preferable to use a silicon interposer as the interposer 731. Because interposers do not require active elements, they can be manufactured at a lower cost than integrated circuits. This is possible. On the other hand, the wiring of the silicon interposer is formed using a semiconductor process. Because this allows for the formation of fine wiring, which is difficult with resin interposers, it is easy.

[0368] In HBM, many wires need to be connected to achieve a wide memory bandwidth. Therefore, interposers that implement HBM require the formation of fine and high-density wiring. Therefore, a silicon interposer is used for the interposer that implements HBM. This is preferable.

[0369] Furthermore, in SiP and MCM using silicon interposers, integrated circuits and interposers are used. Reliability degradation due to differences in expansion coefficients between posers is less likely to occur. Also, silicon interpolation Because the silicon interposer has high surface flatness, integrated circuits and silicon are placed on the silicon interposer. Connection failures between interposers are less likely to occur. In particular, when multiple integrated circuits are placed on the interposer... In 2.5D packages (2.5-dimensional packaging) where components are arranged side by side, silicon interpolation It is preferable to use "za".

[0370] Alternatively, a heat sink (heat dissipation plate) may be provided in conjunction with the electronic component 730. If a configuration is provided, it is preferable to align the heights of the integrated circuits provided on the interposer 731. For example, in the electronic component 730 shown in this embodiment, the storage device 1000 and the semiconductor device 7 It is preferable to make the heights of the 35s consistent.

[0371] To mount the electronic component 730 onto another substrate, an electrode 733 is placed at the bottom of the package substrate 732. A suitable feature may be provided. Figure 24(B) shows an example in which the electrode 733 is formed with a solder ball. By arranging solder balls in a matrix pattern at the bottom of the package substrate 732, BGA (B This enables the implementation of an all-grid array. Furthermore, electrode 733 can be connected to conductive pins. It may be formed by providing conductive pins in a matrix at the bottom of the package substrate 732. This allows for the implementation of PGA (Pin Grid Array).

[0372] The electronic component 730 can be mounted on other boards using various mounting methods, not limited to BGA and PGA. It can be installed. For example, SPGA (Staggered Pin Grid Ar ray), LGA (Land Grid Array), QFP (Quad Flat Package), QFJ(Quad Flat J-leaded package) , or QFN (Quad Flat Non-leaded package), etc. Implementation methods can be used.

[0373] This embodiment may be implemented in appropriate combination with the configurations described in other embodiments. This is possible.

[0374] (Embodiment 5) In this embodiment, regarding the application example of a memory device using the semiconductor device shown in the previous embodiment, Let me explain. The semiconductor device shown in the above embodiment is, for example, used in various electronic devices (for example, information Terminals, computers, smartphones, e-readers, digital cameras (including video cameras) This can be applied to storage devices (including recording and playback devices, navigation systems, etc.). Secondly, computers include tablet computers, notebook computers, and This includes not only desktop computers but also large computers such as server systems. Alternatively, the semiconductor device shown in the previous embodiment may be a memory card (for example, S Various types of removable media such as D cards, USB memory sticks, and SSDs (Solid State Drives) This applies to bubble storage devices. Figures 25(A) to (E) show examples of removable storage device configurations. This is schematically shown. For example, the semiconductor device shown in the above embodiment is a packaged It is processed into Moly chips and used in various storage devices and removable memory.

[0375] Figure 25(A) is a schematic diagram of a USB memory device. The USB memory device 1100 is housed in a casing 1101 It has a cap 1102, a USB connector 1103, and a circuit board 1104. Circuit board 110 4 is housed in the casing 1101. For example, the circuit board 1104 contains the memory chip 110 5. Controller chip 1106 is installed. Memory chip 1 on board 1104 The semiconductor device shown in the above embodiment can be incorporated into 105, etc.

[0376] Figure 25(B) is a schematic diagram of the external appearance of an SD card, and Figure 25(C) shows the internal structure of an SD card. This is a schematic diagram of the structure. The SD card 1110 consists of a housing 1111, a connector 1112 and a base It has a board 1113. The circuit board 1113 is housed in the housing 1111. For example, circuit board 11 The memory chip 1114 and the controller chip 1115 are mounted on component 13. By also providing a memory chip 1114 on the back side of the circuit board 1113, the SD card 1110 The capacity can be increased. Also, a wireless chip with wireless communication capabilities is provided on the circuit board 1113. This may be done. This allows wireless communication between the host device and the SD card 1110 to be performed. The memory on board 1113 can be read from and written to the Mori chip 1114. The semiconductor device shown in the above embodiment can be incorporated into chip 1114 or the like.

[0377] Figure 25(D) is a schematic diagram of the external appearance of an SSD, and Figure 25(E) is a schematic diagram of the internal structure of an SSD. This is a diagram of the equation. The SSD1150 consists of a housing 1151, a connector 1152, and a circuit board 1153. It has. The circuit board 1153 is housed in the casing 1151. For example, the circuit board 1153 has The memory chip 1154, memory chip 1155, and controller chip 1156 are installed. The memory chip 1155 is the work memory of the controller chip 1156. For example, a DOSRAM chip can be used. There is also a memory chip 11 on the back side of the circuit board 1153. By adding 54, the capacity of SSD1150 can be increased. (Note on board 1153) The semiconductor device shown in the above embodiment can be incorporated into a rechip 1154 or the like.

[0378] The configurations, methods, etc. shown in this embodiment may differ from the configurations, structures, methods, etc. shown in other embodiments. They can be used in combination as appropriate.

[0379] (Embodiment 6) In this embodiment, a specific example of an electronic device applicable to a semiconductor device according to one aspect of the present invention is described. This will be explained using Figures 26(A) through (F).

[0380] More specifically, a semiconductor device according to one aspect of the present invention is a processor such as a CPU or GPU It can be used as a chip or a tip. Figures 26(A) to (F) show one embodiment of the present invention. Specific examples of electronic devices equipped with such processors or chips, such as CPUs and GPUs, are shown.

[0381] <Electronic Equipment and Systems> A GPU or chip according to one aspect of the present invention can be mounted in various electronic devices. Examples of electronic devices include, for instance, television equipment, desktop or notebook computers. Personal computers, computer monitors, digital signage (Digi Digital signage (electronic billboards), large game machines such as pachinko machines, and other relatively large devices. In addition to electronic devices with screens, digital cameras, digital video cameras, and digital photo Examples include frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices. Furthermore, by providing an integrated circuit or chip according to one aspect of the present invention in an electronic device, Artificial intelligence can be installed in the sub-devices.

[0382] An electronic device according to one aspect of the present invention may have an antenna. The antenna receives a signal. This allows the display unit to show images, information, etc. Also, the electronic device acts as an antenna. Furthermore, if a secondary battery is present, the antenna may be used for contactless power transmission.

[0383] An electronic device according to one aspect of the present invention includes a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation). Number, distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power (including functions for measuring radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation) It is acceptable to have it.

[0384] An electronic device according to one aspect of the present invention can have various functions. For example, various information Functions to display (still images, videos, text images, etc.) on the display unit, touch panel function, calendar Functions to display the date or time, and to run various software (programs). Functions include: wireless communication, and reading programs or data recorded on a recording medium. It can have functions, etc. Examples of electronic devices are shown in Figures 26(A) to (F).

[0385] [mobile phone] Figure 26(A) illustrates a mobile phone (smartphone), which is a type of information terminal. The information terminal 5500 has a housing 5510 and a display unit 5511, and inputs As an interface, a touch panel is provided on the display unit 5511, and buttons are located on the housing 551 It is set up for 0.

[0386] The information terminal 5500 utilizes artificial intelligence by applying a chip according to one embodiment of the present invention. The application can be run. As an application utilizing artificial intelligence. For example, an application that recognizes a conversation and displays the content of that conversation on the display unit 5511. The display unit 5511 recognizes characters, shapes, etc., entered by the user on the touch panel. The application to be displayed on the display unit 5511, and the biometric authentication such as fingerprints and voiceprints are performed. Applications are one example.

[0387] [Information Terminal 1] Figure 26(B) shows a desktop information terminal 5300. The 5300 type information terminal consists of the main unit 5301, the display 5302, and a keyboard. It has 5303.

[0388] The desktop information terminal 5300, like the information terminal 5500 described above, is based on the first part of the present invention. By applying a chip of this type, it is possible to run applications that utilize artificial intelligence. Yes, it is possible. Examples of applications that utilize artificial intelligence include design support software. Examples include document editing software and automated menu generation software. By using the 5300 top-type information terminal, it is possible to develop new artificial intelligence.

[0389] In the above, smartphones and desktop information terminals were used as examples of electronic devices. As shown in Figures 26(A) and (B), these are smartphones and desktops, respectively. Information terminals other than dedicated information terminals can be used. This includes smartphones and desktop computers. Other information terminals besides those used for general information are, for example, PDAs (Personal Digital Devices). Examples include (i) Assistants, notebook computers, and workstations.

[0390] [electric appliances] Figure 26(C) shows an example of an electrical appliance, the electric refrigerator-freezer 5800. The 5800 refrigerator-freezer includes a casing 5801, a door for the refrigerator compartment 5802, a door for the freezer compartment 5803, etc. ru.

[0391] By applying a chip according to one aspect of the present invention to an electric refrigerator 5800, artificial intelligence An electric refrigerator-freezer 5800 with the following features can be realized. By utilizing artificial intelligence... The electric refrigerator-freezer 5800 is used to store food items, and the food It has a function that automatically generates menus based on the expiration dates of ingredients, and the menus are stored in the 5800 electric refrigerator / freezer. It can have features such as automatically adjusting the temperature to suit the ingredients being used.

[0392] In this example, we have described electric refrigerators and freezers as electrical appliances, but other electrical appliances and For example, vacuum cleaners, microwave ovens, electric ovens, rice cookers, water heaters, induction cooktops , water dispensers, heating and cooling appliances including air conditioners, washing machines, dryers, etc. Examples include audiovisual equipment.

[0393] [Game console] Figure 26(D) shows the portable game console 5200, which is an example of a game console. The device includes a housing 5201, a display unit 5202, buttons 5203, etc.

[0394] By applying a GPU or chip according to one aspect of the present invention to a portable game console 5200, This makes it possible to create a low-power portable game console, the 5200. Furthermore, due to its low power consumption, Because it can reduce heat generation from the circuit, the heat generated by the circuit itself, the surrounding circuits, and This can minimize the impact on the module.

[0395] Furthermore, by applying a GPU or chip according to one aspect of the present invention to the portable game console 5200... This makes it possible to realize the 5200, a portable game console equipped with artificial intelligence.

[0396] Originally, the progression of the game, the behavior of creatures appearing in the game, and the phenomena that occur in the game, etc. The expression is determined by the program of the game, but the handheld game console 520 By applying artificial intelligence to 0, it becomes possible to create expressions that are not limited to game programs. For example, the questions the player asks, the game's progress, the time, and the characters that appear in the game. This allows for expressions that describe a change in a person's words and actions.

[0397] Furthermore, when playing games that require multiple players on the 5200 handheld game console, artificial intelligence is used. This allows for the creation of anthropomorphic game players, thus enabling the opponent to be represented by artificial intelligence. By making it a night game, it's possible to play the game even by yourself.

[0398] Figure 26(D) shows a portable game console as an example of a game console, but one aspect of the present invention is Game consoles to which the GPU or chip of this embodiment is applied are not limited thereto. Examples of game machines to which the PU or chip is applied include home consoles and entertainment machines. Arcade game machines installed in entertainment facilities (game centers, amusement parks, etc.), sports facilities Examples include pitching machines installed for batting practice.

[0399] [Mobile] A GPU or chip according to one aspect of the present invention is used in a mobile vehicle and the area around the driver's seat of the vehicle. It can be applied to this.

[0400] Figure 26(E1) shows an example of a mobile vehicle, automobile 5700, and Figure 26(E2) shows an automatic This diagram shows the area around the windshield inside a car. In Figure 26(E2), the dashboard... Display panels 5701, 5702, and 5703 attached to the cord Additionally, a display panel 5704 mounted on the pillar is illustrated.

[0401] Display panels 5701 to 5703 display the speedometer, tachometer, and By displaying information such as distance traveled, fuel gauge, gear status, and air conditioning settings, it provides a variety of information. This is possible. Furthermore, the display items and layout shown on the display panel can be customized to the user's preferences. It can be modified as needed to enhance the design. (Display panel) Panels 5701 through 5703 can also be used as lighting devices.

[0402] The display panel 5704 shows the information from an imaging device (not shown) installed in the automobile 5700. By projecting images, it is possible to compensate for the blind spots (visibility obstructed by pillars). In other words, by displaying images from an imaging device installed on the outside of the automobile 5700 This can compensate for blind spots and enhance safety. It also displays images that fill in the gaps in what is not visible. This allows for a more natural and seamless safety check. (Display panel 570) Item 4 can also be used as a lighting device.

[0403] A GPU or chip according to one aspect of the present invention can be applied as a component of artificial intelligence, for example If so, the chip can be used in the autonomous driving system of the automobile 5700. The chip can be used in systems for road guidance, hazard prediction, and other purposes. (Display panel 57) Panels 01 through 5704 are configured to display information such as road guidance and hazard predictions. That's good too.

[0404] In the above, an automobile was described as an example of a moving object, but the moving object is an automobile. It is not limited to these. For example, examples of moving objects include trains, monorails, ships, and aircraft (helicopters). Other examples include unmanned aerial vehicles (drones), airplanes, and rockets, and these can be moved Applying a chip according to one aspect of the present invention to a moving object to provide it with a system utilizing artificial intelligence. It is possible.

[0405] [Broadcasting System] A GPU or chip according to one aspect of the present invention can be applied to a broadcasting system.

[0406] Figure 26(F) schematically illustrates data transmission in a broadcasting system. Specifically, Figure 26(F) shows that radio waves (broadcast signals) transmitted from broadcasting station 5680 are being received by televisions in each household. This shows the path to the John receiving device (TV) 5600. TV5600 is the receiving device. The receiving device (not shown) receives the broadcast signal received by antenna 5650. It is then transmitted to TV5600.

[0407] In Figure 26(F), antenna 5650 is UHF (Ultra High Frequency). The diagram shows an antenna, but the antenna 5650 is for BS / 110°CS Antennas, including CS antennas, can also be used.

[0408] Radio waves 5675A and 5675B are broadcast signals for terrestrial broadcasting, and radio tower 5670 is The received radio wave 5675A is amplified and used to transmit radio wave 5675B. In each household, the antenna By receiving radio wave 5675B with the NA5650, you can watch terrestrial TV broadcasts with the TV5600. It is possible. Furthermore, the broadcasting system is not limited to terrestrial broadcasting as shown in Figure 26(F), but also includes human This could also include satellite broadcasting using satellites, or data broadcasting via fiber optic lines.

[0409] The broadcasting system described above applies a chip according to one aspect of the present invention and utilizes artificial intelligence for broadcasting. It can also be used as a transmission system. Broadcast data is transmitted from broadcast station 5680 to TVs 5600 in each home. At that time, the encoder compresses the broadcast data, and the antenna 5650 receives the broadcast When data is received, the decoder of the receiving device included in the TV5600 processes the broadcast data Data recovery is performed. By using artificial intelligence, for example, the compression method of the encoder is restored. In motion compensation prediction, which is one aspect of the law, the recognition of display patterns contained in the displayed image. It can do this. It can also perform in-frame predictions using artificial intelligence. Also, for example... For example, receiving low-resolution broadcast data and using the high-resolution TV5600 to view the same broadcast data When displaying the data, the decoder performs upconversion and other processes during the restoration of the broadcast data. It can perform image interpolation.

[0410] The broadcasting system using artificial intelligence described above is designed to handle the increasing volume of broadcast data in ultra-high-definition television. It is suitable for revision (UHDTV: 4K, 8K) broadcasting.

[0411] Furthermore, as an application of artificial intelligence on the TV5600 side, for example, the TV5600 can be equipped with artificial intelligence A recording device having the capability may be provided. By having such a configuration, the recording device By having artificial intelligence learn the user's preferences, the system automatically records programs that match the user's taste. It can be drawn.

[0412] The electronic device described in this embodiment, its functions, examples of artificial intelligence applications, and their effects. These can be combined as appropriate with descriptions of other electronic devices.

[0413] The configurations, methods, etc. shown in this embodiment may differ from the configurations, structures, methods, etc. shown in other embodiments. They can be used in combination as appropriate. [Explanation of Symbols]

[0414] 60 cells 61 cells 100 Capacitive elements 100A capacitive element 100b Capacitive element 200 transistors 200A transistor 200b Transistor 204 Conductor 204_1 Conductor 204_2 Conductor 204a Conductor 204b Conductor 205 Conductors 205a Conductor 205b Conductor 210 Insulator 211 Insulator 212 Insulator 214 Insulator 216 Insulator 218 Conductors 222 Insulator 224 Insulator 230 Oxides 230a Oxide 230A Oxide film 230b Oxide 230B Oxide film 230c oxide 230C oxide film 238 Aperture 240 Conductors 241 Insulator 242 Conductors 242a Conductor 242A conductor layer 242b Conductor 242c conductor 243 Oxides 243a Oxide 243A Oxide film 243b Oxide 243B Oxide layer 246 Conductors 250 Insulator 250A insulating film 260 Conductors 260a Conductor 260Aa conductive film 260Ab conductive film 260b conductor 272 Insulator 273 Insulator 274 Insulator 280 Insulator 282 Insulator 283 Insulator 284 Insulator 287 Insulator 300 transistors 311 circuit board 313 Semiconductor field 314a Low resistance area 314b Low resistance region 315 Insulator 316 Conductors 320 Insulator 322 Insulator 324 Insulator 326 Insulator 328 Conductors 330 Conductors 350 Insulator 352 Insulator 354 Insulator 356 Conductors 430 Conductors 600 cell array 600_n Cell Array 600_1 Cell Array 700 Electronic Components 702 Printed Circuit Board 704 Mounted circuit board 711 Mold 712 Land 713 Electrode Pads 714 Wire 730 Electronic Components 731 Interposer 732 Package substrates 733 Electrode 735 Semiconductor Equipment 901 Boundary area 902 Boundary area 1000 storage devices 1001 Wiring 1002 Wiring 1003 Wiring 1004 Wiring 1005 Wiring 1006 Wiring 1007 Wiring 1100 USB flash drive 1101 enclosure 1102 Cap 1103 USB connector 1104 circuit board 1105 memory chip 1106 Controller Chip 1110 SD card 1111 cabinet 1112 connector 1113 circuit board 1114 memory chips 1115 Controller Chip 1150 SSD 1151 cabinet 1152 Connector 1153 circuit board 1154 memory chips 1155 memory chip 1156 Controller Chip 1200 storage layer 1400 storage device 1411 Peripheral Circuits 1420 row circuit 1430 column circuit 1440 Output Circuit 1460 Control Logic Circuit 1470 memory cell array 1471 memory cells 1472 memory cells 1473 memory cells 1500 Drive circuit layer 5200 portable game consoles 5201 enclosure 5202 Display section 5203 button 5300 Desktop Information Terminal 5301 Main Unit 5302 Display 5303 Keyboard 5500 Information Terminals 5510 enclosure 5511 Display section 5600 TV 5650 Antenna 5670 radio tower 5675A radio wave 5675B Radio Waves 5680 Broadcasting Station 5700 automobiles 5701 Display Panel 5702 Display Panel 5703 Display Panel 5704 Display Panel 5800 Electric Refrigerator / Freezer 5801 enclosure 5802 Refrigerator door 5803 Freezer door

Claims

[Claim 1] A semiconductor device having a transistor and a capacitive element electrically connected to the transistor, The aforementioned transistor is A first conductor and a second insulator on a first insulator, A sixth conductor having a region in contact with the first conductor, A third insulator on the first conductor, on the sixth conductor, and on the second insulator, The fourth insulator on the third insulator, The first oxide on the fourth insulator and The second oxide and the third oxide on the first oxide, A second conductor in contact with the upper surface of the third insulator, the side surface of the fourth insulator, the side surface of the first oxide, the side surface of the second oxide, and the upper surface of the second oxide, A third conductor in contact with the upper surface of the third insulator, the side surface of the fourth insulator, the side surface of the first oxide, the side surface of the third oxide, and the upper surface of the third oxide, The fourth oxide on the first oxide, The fifth insulator on the fourth oxide, The fifth insulator has a fourth conductor, The third insulator has a region in contact with the first conductor and a region in contact with the sixth conductor. The fourth conductor functions as the gate of the transistor, The second conductor and the third conductor each function as a source electrode or a drain electrode. The first oxide, the second oxide, and the fourth oxide each include an oxide semiconductor that functions as a semiconductor. The stacking of the first oxide, the second oxide, and the fourth oxide includes a channel-forming region. The aforementioned capacitive element is The fifth conductor on the first insulator, A seventh conductor having a region in contact with the fifth conductor, The third insulator on the fifth conductor and the seventh conductor, The third insulator has the second conductor on it, The semiconductor device has a third insulator having a region in contact with the fifth conductor and a region in contact with the seventh conductor.

Images