Raw material composition for forming aluminum oxide film, method for forming aluminum oxide film, aluminum oxide film, and apparatus for manufacturing aluminum oxide film

Abstract

This invention provides a raw material composition for forming an aluminum oxide film, a method for forming an aluminum oxide film, an aluminum oxide film, and an apparatus for manufacturing an aluminum oxide film, which improves the step coverage of the aluminum oxide film even when forming an aluminum oxide film on the surface of a three-dimensional substrate. [Solution] A raw material composition for forming an aluminum oxide film, comprising trimethylaluminum and dimethylaluminum hydride, wherein the content of dimethylaluminum hydride in the composition is greater than 0 ppm by mass and less than or equal to 1000 ppm by mass. An aluminum oxide film manufacturing apparatus 100 for forming an aluminum oxide film on the surface of a three-dimensional substrate 31 comprises a raw material supply unit 10 for supplying the raw material composition, a reaction gas supply unit 20 for supplying a reaction gas containing oxygen atoms, and a reaction chamber 30 for reacting the aluminum oxide film forming raw material composition supplied from the raw material supply unit with the reaction gas supplied from the reaction gas supply unit.

Claims

1. A raw material composition for forming an aluminum oxide film, comprising trimethylaluminum and dimethylaluminum hydride, The boron content in the aluminum oxide film forming raw material composition is 100 × 10 －９ mol / g or less, and chlorine content is 300 x 10 －９ A raw material composition for forming an aluminum oxide film, having a concentration of mol / g or less.

2. A raw material composition for forming an aluminum oxide film according to claim 1, which does not contain dimethylaluminum chloride.

3. The total content of chromium and iron in the aluminum oxide film forming raw material composition is 3 × 10 －９ A raw material composition for forming an aluminum oxide film according to claim 1 or 2, wherein the concentration is mol / g or less.

4. A method for forming an aluminum oxide film, comprising a reaction step of adhering the aluminum oxide film-forming raw material composition described in claim 1 or 2 to the surface of a substrate as a raw material, and reacting the raw material with a reaction gas containing an oxygen atom gas.

5. The method for forming an aluminum oxide film according to claim 4, wherein the reaction gas contains ozone.

6. The method for forming an aluminum oxide film according to claim 4, wherein the reaction step is carried out using atomic layer deposition.

7. An aluminum oxide film obtained by the method for forming an aluminum oxide film according to claim 4.

8. A raw material supply unit that supplies the raw material composition for forming an aluminum oxide film according to claim 1 or 2, A reaction gas supply unit that supplies a reaction gas containing oxygen atoms, An aluminum oxide film manufacturing apparatus comprising: a raw material composition for forming an aluminum oxide film supplied from the raw material supply unit; and a reaction chamber for reacting the reaction gas supplied from the reaction gas supply unit.

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