Active dual-band liquid crystal transmissive / reflective array structure

Abstract

We will complete an antenna array structure applicable to the 5G millimeter-wave communication frequency band and the low-Earth orbit satellite communication frequency band. [Solution] We propose an active dual-band liquid crystal transmissive / reflective array structure with a special structural design. The present invention provides an active dual-band liquid crystal transmissive / reflective array structure which includes a first substrate layer, a second substrate layer, a first liquid crystal layer, a first surface unit, a second surface unit, a third surface unit, and a fourth surface unit. The first liquid crystal layer is laminated and connected between the first substrate layer and the second substrate layer. When no bias voltage is applied to the first liquid crystal layer, the center operating frequency of the active dual-band liquid crystal transmissive / reflective array structure is in the first frequency band, and relatively, when a bias voltage is applied to the first liquid crystal layer, the center operating frequency of the active dual-band liquid crystal transmissive / reflective array structure is in the second frequency band, and the first frequency band is higher than the second frequency band.

Description

Technical Field

[0001] The present invention relates to a transmissive - reflective array structure, and particularly to an active dual - band liquid - crystal transmissive - reflective array structure.

Background Art

[0002] Generally, common array structures are mostly passive - type array structures or array structures in which each unit is individually controlled. However, passive - type array structures lack adjustability and are difficult to adapt to the demands of beam - forming directions different from the operating frequency band. Also, due to hardware limitations, the performance of array structures that can individually control each unit is limited.

Summary of the Invention

Problems to be Solved by the Invention

[0003] In view of this, the present invention provides an active dual - band liquid - crystal transmissive - reflective array structure applicable to the 5G millimeter - wave communication frequency band and the low - earth - orbit satellite communication frequency band.

Means for Solving the Problems

[0004] Embodiments of the present invention provide an active dual-band liquid crystal transmissive-reflective array structure, comprising a first substrate layer, a second substrate layer, a first liquid crystal layer, a first surface unit, a second surface unit, a third surface unit, and a fourth surface unit. The first liquid crystal layer is laminated and connected between the first and second substrate layers. The first substrate layer has a first upper surface and a first lower surface. The second substrate layer has a second upper surface and a second lower surface. The first surface units are arranged in an array on the first upper surface. The second surface units are arranged in an array on the first lower surface. The third surface units are arranged in an array on the second upper surface. The fourth surface units are arranged in an array on the second lower surface. When no bias voltage is applied to the first liquid crystal layer, the center operating frequency of the active dual-band liquid crystal transmissive-reflective array structure is within the first frequency band. When a bias voltage is applied to the first liquid crystal layer, the center operating frequency of the active dual-band liquid crystal transmissive-reflective array structure is within the second frequency band. The first frequency band is higher than the second frequency band.

[0005] In embodiments of the present invention, the first part of the active dual-band liquid crystal transmissive-reflective array structure constitutes a reflective unit cell. When no bias voltage is applied to the first liquid crystal layer, the reflective unit cell is used as a reflective surface, and the center operating frequency of the reflective unit cell is within the first frequency band.

[0006] In embodiments of the present invention, the first part of the active dual-band liquid crystal transmissive-reflective array structure includes a first surface outer frame patch in the first surface unit, a first surface inner frame patch in the first surface unit, a first substrate layer, a second surface rectangular patch in the second surface unit, a second surface metal wire in the second surface unit, a first liquid crystal layer, a second substrate layer, a third surface rectangular patch in the third surface unit, and a third surface metal wire in the third surface unit.

[0007] In embodiments of the present invention, the second portion of the active dual-band liquid crystal transmissive-reflective array structure constitutes a transmissive unit cell. When a bias voltage is applied to the first liquid crystal layer, the transmissive unit cell is used as a transmissive surface, and the center operating frequency of the transmissive unit cell is within the second frequency band.

[0008] In embodiments of the present invention, the second part of the active dual-band liquid crystal transmissive-reflective array structure includes a first surface cross-shaped patch in the first surface unit, a first substrate layer, a second surface unit, a first liquid crystal layer, a third surface unit, a second substrate layer, and a fourth surface unit.

[0009] In embodiments of the present invention, the first surface unit includes four first surface outer frame patches and a first surface cross-shaped patch. Each first surface outer frame patch contains a first surface inner frame patch. The four first surface outer frame patches are each arranged around the first surface cross-shaped patch.

[0010] In an embodiment of the present invention, there is a first surface rectangular slit between the first surface outer frame patch and the corresponding first surface inner frame patch, and each first surface inner frame patch has a first surface rectangular slot hole in the center.

[0011] In embodiments of the present invention, the length and width of the first surface outer frame patch are 0.5 to 3.3 millimeters (mm).

[0012] In embodiments of the present invention, the first surface cross-shaped patch has a first longitudinal portion and a first transverse portion, the lengths of the first longitudinal portion and the first transverse portion being 1.5 to 8.5 millimeters.

[0013] In embodiments of the present invention, the second surface unit includes four second surface rectangular patches, a plurality of second surface metal wires connected to the edges of the four second surface rectangular patches, and a second surface cross-shaped slot hole located in the center of each second surface rectangular patch.

[0014] In an embodiment of the present invention, a cross-shaped opening on the second surface is formed by surrounding it with four rectangular patches on the second surface and a plurality of metal wires on the second surface.

[0015] In an embodiment of the present invention, the second surface cross-shaped slot hole has a second longitudinal direction part and a second transverse direction part. The widths of the second longitudinal direction part and the second transverse direction part are 0.57 to 0.67 millimeters, and the lengths of the second longitudinal direction part and the second transverse direction part are 3.25 to 3.35 millimeters.

[0016] In an embodiment of the present invention, the third surface unit includes four third surface rectangular patches, a plurality of third surface metal wires connected to the edges of the four third surface rectangular patches, and a third surface square slot hole located at the center of each third surface rectangular patch.

[0017] In an embodiment of the present invention, a third surface cross-shaped opening is formed so as to be surrounded by the four third surface rectangular patches and the plurality of third surface metal wires.

[0018] In an embodiment of the present invention, the fourth surface unit is a fourth surface cross-shaped patch.

[0019] In an embodiment of the present invention, the first surface unit, the second surface unit, the third surface unit, and the fourth surface unit are all composed of a metal material.

[0020] In an embodiment of the present invention, before and after a bias voltage is applied to the first liquid crystal layer, the dielectric constant and the tangent loss of the first liquid crystal layer are 2.55 to 3.76 and 0.004 to 0.006, respectively.

[0021] In an embodiment of the present invention, the first frequency band is from 27 gigahertz (GHz) to 29 gigahertz.

[0022] In an embodiment of the present invention, the second frequency band is from 17 gigahertz to 19 gigahertz.

[0023] In an embodiment of the present invention, the quantities of the first surface unit, the second surface unit, the third surface unit, and the fourth surface unit are all N×N, where N is a positive integer.

Advantages of the Invention

[0024] Based on the above, the active dual-band liquid crystal transmission / reflection array structure of the present invention can regard the first liquid crystal layer as a switch, and mode switching can be performed on the active dual-band liquid crystal transmission / reflection array structure. Further explained, when no bias voltage is applied to the first liquid crystal layer, the center operating frequency of the reflective unit cell may be within the Ka frequency band. When a bias voltage is applied to the first liquid crystal layer, the center operating frequency of the transmissive unit cell may be within the Ku frequency band. Based on this, the active dual-band liquid crystal transmission / reflection array structure of the present invention can meet various communication requirements.

Brief Description of the Drawings

[0025] [Figure 1A] The schematic diagram of the multi-layer structure of the active dual-band liquid crystal transmission / reflection array structure according to an embodiment of the present invention is shown. [Figure 1B] The cross-sectional view of the active dual-band liquid crystal transmission / reflection array structure according to an embodiment of the present invention is shown. [Figure 2A] The schematic diagram of the unit cell design of the first surface unit according to an embodiment of the present invention is shown. [Figure 2B] The schematic diagram of the unit cell design of the second surface unit according to an embodiment of the present invention is shown. [Figure 2C] The schematic diagram of the unit cell design of the third surface unit according to an embodiment of the present invention is shown. [Figure 2D] The schematic diagram of the unit cell design of the fourth surface unit according to an embodiment of the present invention is shown. [Figure 3A] The schematic diagram of the structure of the reflective unit cell according to an embodiment of the present invention is shown. [Figure 3B] The schematic diagram of the reflection coefficient value and phase change before applying the bias voltage to the reflective unit cell according to an embodiment of the present invention is shown. [Figure 3C] The schematic diagram of the performance before applying the bias voltage above and below the liquid crystal of the reflective unit cell according to an embodiment of the present invention is shown. [Figure 4A] The schematic diagram of the structure of the transmissive unit cell according to an embodiment of the present invention is shown. [Figure 4B] A schematic diagram of the transmission coefficient value and phase change after applying a bias voltage to a transmission unit cell of one embodiment of the present invention is shown. [Figure 4C] This diagram shows a schematic representation of the effect after applying a bias voltage to the top and bottom of the liquid crystal of a transmissive unit cell according to one embodiment of the present invention. [Figure 5A] A schematic diagram of the phase distribution required for phase compensation in a reflective unit cell of one embodiment of the present invention is shown. [Figure 5B] A schematic diagram of the phase distribution required for phase compensation in a transmission unit cell of one embodiment of the present invention is shown. [Figure 6A] A schematic diagram of the structure of the reflective array according to the first embodiment of the present invention is shown. [Figure 6B] This shows the polar coordinate diagram of the first embodiment of the present invention before the application of the bias voltage to achieve the gain of the reflection array. [Figure 6C] This diagram shows the realized gain of the reflection array of the first embodiment of the present invention before the bias voltage is applied. [Figure 7A] A schematic diagram of the structure of a reflective array according to a second embodiment of the present invention is shown. [Figure 7B] This shows the polar coordinate diagram of the realization gain of the reflection array of the second embodiment of the present invention before the application of the bias voltage. [Figure 7C] This shows the realized gain diagram of the reflection array of the second embodiment of the present invention before the bias voltage is applied. [Figure 8A] A schematic diagram of the structure of the transmission array according to the third embodiment of the present invention is shown. [Figure 8B] The polar coordinate diagram of the realization gain of the transmission array according to the third embodiment of the present invention after the application of a bias voltage is shown. [Figure 8C] This diagram shows the realized gain after applying a bias voltage to the transmission array of the third embodiment of the present invention. [Figure 9A] A schematic diagram of the structure of the transmission array according to the fourth embodiment of the present invention is shown. [Figure 9B] The polar coordinate diagram of the realization gain of the transmission array according to the fourth embodiment of the present invention after the application of a bias voltage is shown. [Figure 9C] The figure shows the realized gain after applying a bias voltage to the transmission array of the fourth embodiment of the present invention. [Figure 10A] A schematic diagram of the structure of the transmission array according to the fifth embodiment of the present invention is shown. [Figure 10B] The polar coordinate diagram of the realization gain of the transmission array according to the fifth embodiment of the present invention after the application of a bias voltage is shown. [Figure 10C] This diagram shows the realized gain after applying a bias voltage to the transmission array of the fifth embodiment of the present invention. [Modes for carrying out the invention]

[0026] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Wherever possible, the same reference numerals are used in the drawings and description to represent the same or similar parts.

[0027] Figure 1A shows a schematic diagram of the multilayer structure of an active dual-band liquid crystal transmissive-reflective array structure according to one embodiment of the present invention, and Figure 1B shows a cross-sectional view of the active dual-band liquid crystal transmissive-reflective array structure according to one embodiment of the present invention. Referring to Figures 1A and 1B, the design of the active dual-band liquid crystal transmissive-reflective array structure is mainly a two-layer, four-surface circuit board, and the active dual-band liquid crystal transmissive-reflective array structure includes a first substrate layer 1, a first liquid crystal layer 2, a second substrate layer 3, a first surface unit 111, a second surface unit 121, a third surface unit 311, and a fourth surface unit 321. The first substrate layer 1 has a first upper surface 11 and a first lower surface 12. The second substrate layer 3 has a second upper surface 31 and a second lower surface 32. The number of the first surface unit 111, the second surface unit 121, the third surface unit 311, and the fourth surface unit 321 may be, for example, N × N, where N is a positive integer greater than 1.

[0028] The first liquid crystal layer 2 is laminated and connected between the first substrate layer 1 and the second substrate layer 3. The first surface units 111 are arranged in an array on the first upper surface 11. The second surface units 121 are arranged in an array on the first lower surface 12. The third surface units 311 are arranged in an array on the second upper surface 31. The fourth surface units 321 are arranged in an array on the second lower surface 32.

[0029] The first substrate layer 1 and the second substrate layer 3 may be, for example, high-frequency printed circuit boards. In one embodiment, the dielectric constant of the first substrate layer 1 and the second substrate layer 3 may be, for example, 3.25 to 3.41, the tangent loss may be, for example, 0.002 to 0.0025, and the copper foil thickness may be, for example, 0.017 to 0.018 millimeters. Furthermore, the first surface unit 111, the second surface unit 121, the third surface unit 311, and the fourth surface unit 321 may be formed from, for example, a metallic material (for example, a metal conductor such as copper foil or gold foil, or another metal oxide conductor such as indium tin oxide). The copper foil thickness of the first surface unit 111, the second surface unit 121, the third surface unit 311, and the fourth surface unit 321 may be, for example, 0.035 millimeters.

[0030] The liquid crystal material used in the first liquid crystal layer 2 may be, for example, JNC ZOC-A018XX, and its thickness is 0.1 millimeters. Before and after a bias voltage is applied to the first liquid crystal layer 2, the dielectric constant of the first liquid crystal layer 2 may be, for example, 2.55 to 3.76, and the tangent loss may be, for example, 0.004 to 0.006. For example, before a bias voltage (0V) is applied to the first liquid crystal layer 2, the liquid crystal orientation direction of the first liquid crystal layer 2 is parallel to the electric field direction, the dielectric constant of the first liquid crystal layer 2 is 2.55, and the tangent loss is 0.006. On the other hand, after a bias voltage (for example, 5V to 20V) is applied to the first liquid crystal layer 2, the liquid crystal orientation direction of the first liquid crystal layer 2 becomes perpendicular to the electric field, the dielectric constant changes to 3.76, and the tangent loss changes to 0.004.

[0031] The types of the first substrate layer 1, the second substrate layer 3, and the first liquid crystal layer 2 can be designed in accordance with actual needs, and the present invention is not limited thereto.

[0032] The first liquid crystal layer 2 is installed between the first substrate layer 1 and the second substrate layer 3. In order to apply a bias voltage to the first liquid crystal layer 2, the four peripheral edges of both the first substrate layer 1 and the second substrate layer 3 are designed as metal edges. Therefore, when a bias voltage is applied to the metal edges of the first substrate layer 1 and the second substrate layer 3, a voltage difference can be created in the vertical direction of the first liquid crystal layer 2, thereby allowing a bias voltage to be applied to the first liquid crystal layer 2. Since this method is a well-known and conventional technique to those skilled in the art, the four peripheral edges of the first substrate layer 1 and the second substrate layer 3 are not specifically shown as metal edges in the drawings.

[0033] Figure 2A shows a schematic diagram of the unit cell design of the first surface unit of one embodiment of the present invention. Referring to Figure 2A, the first surface unit 111 is located within one regular rectangular unit included in the first upper surface 11. For example, as shown in Figure 2A, D x and D y Both dimensions are 8 millimeters, and the first surface unit 111 is located within a regular rectangular unit that is 8 millimeters in both length and width and is included in the first top surface 11. To further explain, the metal layer (e.g., copper foil) originally present on the first top surface 11 may be etched, for example, based on a regular rectangular unit that is 8 millimeters in length and width to form the first surface unit 111.

[0034] The first surface unit 111 includes four first surface outer frame units 1111 and first surface cross-shaped patches 1112, the four first surface outer frame units 1111 each arranged around the first surface cross-shaped patches 1112. Each first surface outer frame unit 1111 has a first surface inner frame patch 1115. There is a first surface rectangular slit 1113 between each first surface outer frame unit 1111 and its corresponding first surface inner frame patch 1115, and each first surface inner frame patch 1115 has a first surface rectangular slot hole 1114 in the center.

[0035] The length and width of the first surface outer frame unit 1111 are Y as shown in Figure 2A. The first surface cross-shaped patch 1112 has a first longitudinal portion and a first transverse portion, and the lengths of the first longitudinal portion and the first transverse portion are X as shown in Figure 2A.

[0036] In one embodiment, the length and width (Y shown in Figure 2A) of the first surface outer frame unit 1111 may be, for example, 0.5 to 3.3 millimeters, the length of the first vertical portion and the first horizontal portion (X shown in Figure 2A) of the first surface cross-shaped patch 1112 may be, for example, 1.5 to 8.5 millimeters, the length and width of the first surface rectangular slit 1113 may be, for example, 0.05 to 0.33 millimeters, the length and width of the first surface rectangular slot hole 1114 may be, for example, 0.25 to 1.65 millimeters, and the length and width of the first surface inner frame patch 1115 may be, for example, 0.35 to 2.31 millimeters.

[0037] Figure 2B shows a schematic diagram of the unit cell design of the second surface unit of one embodiment of the present invention. Referring to Figure 2B, the second surface unit 121 is located within a regular rectangular unit included in the first lower surface 12. For example, as shown in Figure 2B, D x and D y Both dimensions are 8 millimeters, and the second surface unit 121 is located within a regular rectangular unit included in the first bottom surface 12, which has a length and width of 8 millimeters. To further explain, the metal layer (e.g., copper foil) originally present on the first bottom surface 12 may be etched, for example, based on a regular rectangular unit with a length and width of 8 millimeters to form the second surface unit 121.

[0038] The second surface unit 121 includes four second surface rectangular patches 1211, a plurality of second surface metal wires 1213 connected to the edges of the four second surface rectangular patches 1211, and a second surface cross-shaped slot hole 1212 located in the center of each second surface rectangular patch. As shown in Figure 2B, the edges of each second surface rectangular patch 1211 are connected to the four second surface metal wires 1213. The aforementioned four second surface rectangular patches 1211 and second surface metal wires 1213 may, for example, surround a second surface cross-shaped opening 1214.

[0039] The position of the second surface cross-shaped slot hole 1212 corresponds to the position of the first surface rectangular slot hole 1114, and the position of the second surface cross-shaped opening 1214 corresponds to the position of the first surface cross-shaped patch 1112.

[0040] The second surface cross-shaped slot hole 1212 has a second vertical portion and a second horizontal portion, and the width and length of the second vertical portion and the second horizontal portion are B and C as shown in Figure 2B, respectively. The second surface cross-shaped opening 1214 has a third vertical portion and a third horizontal portion, and the length of the third vertical portion and the third horizontal portion is A as shown in Figure 2B.

[0041] In one embodiment, the length and width of the second surface rectangular patch 1211 may be, for example, 3.9 to 4.1 millimeters, the width (B shown in Figure 2B) and length (C shown in Figure 2B) of the second vertical and second horizontal portions of the second surface cross-shaped slot hole 1212 may be, for example, 0.57 to 0.67 millimeters and 3.25 to 3.35 millimeters, the length of the second surface metal wire 1213 may be, for example, 0.3 to 0.35 millimeters, and the lengths of the third vertical and third horizontal portions of the second surface cross-shaped opening 1214 may be, for example, 4.55 to 4.62 millimeters (A shown in Figure 2B).

[0042] Figure 2C shows a schematic diagram of the unit cell design of the third surface unit of one embodiment of the present invention. Referring to Figure 2C, the third surface unit 311 is located within a regular rectangular unit included in the second upper surface 31. For example, as shown in Figure 2C, D x and D y Both dimensions are 8 millimeters, and the third surface unit 311 is located within a regular rectangular unit of length and width that is 8 millimeters, which is included in the second top surface 31. To further explain, the metal layer (e.g., copper foil) originally present on the second top surface 31 may be etched based on, for example, a regular rectangular unit of length and width that is 8 millimeters to form the third surface unit 311.

[0043] The third surface unit 311 includes four third surface rectangular patches 3111, a plurality of third surface metal wires 3113 connected to the edges of the four third surface rectangular patches 3111, and a third surface rectangular slot hole 3112 located in the center of each third surface rectangular patch 3111. The aforementioned four third surface rectangular patches 3111 and third surface metal wires 3113 may, for example, surround a third surface cross-shaped opening 3114. The third surface cross-shaped opening 3114 has a fourth longitudinal portion and a fourth transverse portion.

[0044] Furthermore, the position of the third surface rectangular patch 3111 corresponds to the position of the second surface rectangular patch 1211, the position of the third surface square slot hole 3112 corresponds to the position of the second surface cross-shaped slot hole 1212, and the position of the third surface cross-shaped opening 3114 corresponds to the position of the second surface cross-shaped opening 1214.

[0045] In one embodiment, the length and width of the third surface rectangular patch 3111 (D shown in Figure 2C) may be, for example, 2.95 to 3.05 millimeters, the length and width of the third surface square slot hole 3112 (E shown in Figure 2C) may be, for example, 0.85 to 0.95 millimeters, the length of the third surface metal wire 3113 (F shown in Figure 2C) may be, for example, 1.6 to 1.7 millimeters, and the length and width of the fourth longitudinal and fourth transverse portions of the third surface cross-shaped opening 3114 may be, for example, 1.6 to 1.7 millimeters.

[0046] Figure 2D shows a schematic diagram of the unit cell design of the fourth surface unit according to one embodiment of the present invention. Referring to Figure 2D, the fourth surface unit 321 is located within a regular rectangular unit included in the second lower surface 32. For example, as shown in Figure 2D, x and D y All dimensions are 8 millimeters, and the fourth surface unit 321 is located within a regular rectangular unit in the second lower surface 32 that is 8 millimeters in both length and width. To further explain, the metal layer (e.g., copper foil) originally present in the second lower surface 32 may be etched, for example, based on a regular rectangular unit with a length and width of 8 millimeters to form the fourth surface unit 321.

[0047] The fourth surface unit 321 may be, for example, a surface cross-shaped patch (also referred to as a fourth surface cross-shaped patch). The fourth surface unit 321 has a fifth longitudinal portion and a fifth transverse portion, the length of which is X as shown in Figure 2D.

[0048] The location of the fourth surface patch 321 corresponds to the location of the third surface cross-shaped opening 3114.

[0049] In one embodiment, the length and width (X shown in Figure 2D) of the fifth longitudinal and fifth transverse portions of the fourth surface unit 321 (fourth surface cross-shaped patch) may be, for example, 1.5 to 8.5 millimeters.

[0050] Figure 3A shows a schematic diagram of the structure of a reflective unit cell according to one embodiment of the present invention. Referring to Figure 3A, the first substrate layer 1, the first liquid crystal layer 2, and the second substrate layer 3 are stacked to form an active dual-band liquid crystal transmission-reflection array structure. When the dual patches (i.e., the first surface cross-shaped patch 1112 and the fourth surface cross-shaped patch 321) correspond to each other, the transmission response produces an extremely large broadband effect, thereby maintaining the S11 and S21 parameters stably.

[0051] Specifically, the S11 parameter, also called the Input Reflection Coefficient, is used to indicate the return loss at the signal transmitting end. The S21 parameter, also called the Forward Transmission Coefficient, is used to indicate the insertion loss from the signal transmitting end to the signal receiving end. The S11 and S21 parameters relate to the dimensions of each component in the active dual-band liquid crystal transmissive-reflective array structure. More specifically, the patch dimensions of the first surface cross-shaped patch 1112 and the fourth surface cross-shaped patch 321, i.e., X and Y shown in Figures 2A and 2D, relate to the transmission phase and reflection phase angles of the active dual-band liquid crystal transmissive-reflective array structure. The slot hole dimensions of the second surface cross-shaped slot hole 1212, i.e., B and C shown in Figure 2B, relate to the bandwidth and center operating frequency of the active dual-band liquid crystal transmissive-reflective array structure, respectively.

[0052] Referring to Figure 3A, the reflective unit cell is composed of the first part of an active dual-band liquid crystal transmissive-reflective array structure, and its structure is a two-layer substrate design. The dimensions of the reflective unit cell may be, for example, 4.7 millimeters. Specifically, the reflective unit cell is composed of a first surface outer frame patch 1111, a first surface inner frame patch 1115, a first substrate layer 1, a second surface rectangular patch 1211, a second surface metal wire 1213, a first liquid crystal layer 2, a second substrate layer 3, a third surface rectangular patch 3111, and a third surface metal wire 3113.

[0053] When no bias voltage is applied to the first liquid crystal layer 2, the central operating frequency of the active dual-band liquid crystal transmissive-reflective array structure may be, for example, within the first frequency band. Specifically, when no bias voltage is applied to the first liquid crystal layer 2, the reflective unit cell is used as a reflective surface, and the central operating frequency of the reflective unit cell is within the first frequency band, which may be, for example, 27 GHz to 29 GHz. In other words, when no bias voltage is applied to the first liquid crystal layer 2, the reflective unit cell can meet the demands of 5G millimeter-wave communication as a reflective surface with a central operating frequency located in the Ka-band, for example.

[0054] The first frequency band is related to the dimensions of the reflective unit cell.

[0055] Figure 3B shows a schematic diagram of the reflection coefficient value (i.e., S11 parameter) and phase change of a reflective unit cell according to one embodiment of the present invention before the application of a bias voltage. Referring to Figure 3B, the solid line is used to represent the reflection coefficient, the dashed line is used to represent the phase change, the horizontal axis is the size of the patch dimension (Y shown in Figures 2A and 2D), the left vertical axis is the reflection coefficient value, and the right vertical axis is the magnitude of the phase. As shown in Figure 3B, before the bias voltage is applied to the first liquid crystal layer 2, the average value of the reflection coefficient value of the reflective unit cell is approximately 0.75, and the phase change reaches 335 degrees, which meets the performance criteria for reflective array design.

[0056] Figure 3C shows a schematic diagram of the performance of a reflective unit cell of one embodiment of the present invention before bias voltage is applied to the upper and lower liquid crystal layers. Referring to Figure 3C, when no bias voltage is applied to the first liquid crystal layer 2, the active dual-band liquid crystal transmission-reflection array structure may reflect a plane electromagnetic wave incident at 30 degrees with a frequency of, for example, 28 gigahertz, and then focus it at a position of 15 degrees. Both the incident angle and the reflection angle can be designed according to actual requirements, and the present invention is not limited thereto.

[0057] Figure 4A shows a schematic diagram of the structure of a transmissive unit cell according to one embodiment of the present invention. Referring to Figure 4A, the transmissive unit cell is composed of the second part of an active dual-band liquid crystal transmissive-reflective array structure, and its structure is a two-layer substrate design. The dimensions of the transmissive unit cell may be, for example, 9.4 millimeters. Specifically, the transmissive unit cell is composed of a first surface cross-shaped patch 1112, a first substrate layer 1, a second surface unit 121, a first liquid crystal layer 2, a third surface unit 311, a second substrate layer 3, and a fourth surface unit 321.

[0058] When a bias voltage is applied to the first liquid crystal layer 2, the central operating frequency of the active dual-band liquid crystal transmission-reflection array structure may be, for example, within the second frequency band. Specifically, when a bias voltage is applied to the first liquid crystal layer 2, the transmission unit cell is used as a transmission surface, and the central operating frequency of the transmission unit cell is within the second frequency band, which may be, for example, 17 GHz to 19 GHz. That is, when a bias voltage is applied to the first liquid crystal layer 2, the transmission unit cell can meet the demands of low-earth orbit satellite communications as a transmission surface with a central operating frequency located in the Ku frequency band (Ku-band), for example.

[0059] The second frequency band is related to the dimensions of the transmission-type unit cell.

[0060] Figure 4B shows a schematic diagram of the transmission coefficient value (i.e., S21 parameter) and phase change after bias voltage application to a transmissive unit cell of one embodiment of the present invention. Referring to Figure 4B, the solid line is used to represent the transmission coefficient, the dashed line is used to represent the phase change, the horizontal axis is the size of the patch dimension (X shown in Figures 2A and 2D), the left vertical axis is the transmission coefficient value, and the right vertical axis is the phase magnitude. As shown in Figure 4B, after bias voltage is applied to the first liquid crystal layer 2, the average value of the transmission coefficient value of the transmissive unit cell is approximately 0.85, and the phase change reaches 335 degrees, which meets the performance criteria for transmissive array design.

[0061] Figure 4C shows a schematic diagram of the performance of a transmissive unit cell of one embodiment of the present invention after applying a bias voltage to the upper and lower liquid crystal layers. Referring to Figure 4C, when a bias voltage is applied to the first liquid crystal layer 2, the active dual-band liquid crystal transmissive-reflective array structure may transmit a plane electromagnetic wave incident at a frequency of 18 gigahertz and an input angle of 30 degrees, and then focus it to the 0-degree position. Both the incident angle and the transmission angle can be designed according to actual requirements, and the present invention is not limited thereto.

[0062] Once the designs for the reflective unit cell (e.g., the reflective unit cell shown in Figure 3A) and the transmissive unit cell (e.g., the transmissive unit cell shown in Figure 4A) are complete, the phase required for phase compensation between the reflective and transmissive unit cells can be determined.

[0063] Figure 5A shows a schematic diagram of the phase distribution required for phase compensation in a reflective unit cell according to one embodiment of the present invention. Referring to Figure 5A, the schematic diagram of the phase distribution required for phase compensation, calculated by means of a plane electromagnetic wave with a frequency of 28 gigahertz, incident at 30 degrees and reflected at 15 degrees, is shown.

[0064] Figure 5B shows a schematic diagram of the phase distribution required for phase compensation in a transmission-type unit cell of one embodiment of the present invention. Referring to Figure 5B, the schematic diagram of the phase distribution required for phase compensation, which is calculated based on the setting that a plane electromagnetic wave is incident at 0 degrees with a frequency of 18 gigahertz and is transmitted at 0 degrees, is shown.

[0065] The phase required for the aforementioned phase compensation can be obtained, for example, by calculation using formulas and / or algorithms well known to those skilled in the art, and therefore will not be discussed again here.

[0066] After obtaining a schematic diagram of the phase distribution required for phase compensation, as shown in Figures 5A and 5B, an active dual-band liquid crystal transmissive-reflective array structure can be arranged. Specifically, the active dual-band liquid crystal transmissive-reflective array structure can be arranged using reflective unit cells and transmissive unit cells as units. That is, the active dual-band liquid crystal transmissive-reflective array structure can be obtained by arranging multiple reflective unit cells and multiple transmissive unit cells, and multiple reflective unit cells can be arranged to form a reflective array, and multiple transmissive unit cells can be arranged to form a transmissive array.

[0067] Figure 6A shows a schematic diagram of the configuration of a reflective array according to the first embodiment of the present invention, Figure 6B shows a polar coordinate diagram of the realized gain of the reflective array according to the first embodiment of the present invention before the bias voltage is applied, and Figure 6C shows a realized gain diagram of the reflective array according to the first embodiment of the present invention before the bias voltage is applied. Referring to Figures 6A to 6C, the reflective array in Figure 6A is composed of an array of multiple reflective unit cells (for example, the reflective unit cells shown in Figure 3A, whose average reflection coefficient value is approximately 0.75 and whose phase shift reaches 335 degrees), and is obtained by designing it with an incident angle of 30 degrees and a reflection angle of 15 degrees. Since 28-gigahertz electromagnetic waves have a shorter wavelength than 18-gigahertz electromagnetic waves, small unit cells (i.e., the reflective unit cells shown in Figure 3A) are targeted for incidence. In this embodiment, when 28-gigahertz electromagnetic waves are incident, the polar coordinate diagram of the realized gain of the patch unit in action may be as shown in Figure 6B, for example. Furthermore, as shown in Figure 6C, the realized gain of a reflection array with an incident angle of 30 degrees and a reflection angle of 15 degrees is 25.7 dB, and the side-lobe level is approximately 10.7 dB. From this, it can be seen that the reflection array in Figure 6A has the characteristics of reflection phase beam scanning in the 28 gigahertz (Ka frequency band) 5G millimeter-wave communication frequency band.

[0068] Figure 7A shows a schematic diagram of the configuration of a reflective array according to the second embodiment of the present invention, Figure 7B shows a polar coordinate diagram of the realized gain of the reflective array according to the second embodiment of the present invention before the bias voltage is applied, and Figure 7C shows a realized gain diagram of the reflective array according to the second embodiment of the present invention before the bias voltage is applied. Referring to Figures 7A to 7C, the reflective array in Figure 7A is composed of an array of multiple reflective unit cells (for example, the reflective unit cells shown in Figure 3A, whose average reflection coefficient value is approximately 0.75 and whose phase shift reaches 335 degrees), and is obtained by designing it with an incident angle of 30 degrees and a reflection angle of 45 degrees. Since 28-gigahertz electromagnetic waves have a shorter wavelength than 18-gigahertz electromagnetic waves, small unit cells (i.e., the reflective unit cells shown in Figure 3A) are targeted for incidence. In this embodiment, when 28-gigahertz electromagnetic waves are incident, the polar coordinate diagram of the realized gain of the patch unit in action may be as shown in Figure 7B, for example. Furthermore, as shown in Figure 7C, the realized gain of a reflection array with an incident angle of 30 degrees and a reflection angle of 45 degrees is 24.5 dB, and the sidelobe level is approximately 12.3 dB. From this, it can be seen that the reflection array in Figure 7A has the characteristics of reflection phase beam scanning in the 28 gigahertz (Ka frequency band) 5G millimeter-wave communication frequency band.

[0069] Figure 8A shows a schematic diagram of the configuration of a transmission array according to the third embodiment of the present invention, Figure 8B shows a polar coordinate diagram of the realized gain of the transmission array according to the third embodiment of the present invention after the bias voltage is applied, and Figure 8C shows a realized gain diagram of the transmission array according to the third embodiment of the present invention after the bias voltage is applied. Referring to Figures 8A to 8C, the transmission array in Figure 8A is composed of an array of multiple transmission unit cells (for example, the transmission unit cells shown in Figure 4A, whose average value of transmission coefficient is approximately 0.85 and whose phase change reaches 335 degrees), and is obtained by designing it with an incident angle of 0 degrees and a transmission angle of 0 degrees. Since 18 gigahertz electromagnetic waves have a longer wavelength than 28 gigahertz electromagnetic waves, a large unit cell (i.e., the transmission unit cell shown in Figure 4A) is targeted for incidence. In this embodiment, when 18 gigahertz electromagnetic waves are incident, the polar coordinate diagram of the realized gain of the patch unit in action may be as shown in Figure 8B, for example. Furthermore, as shown in Figure 8C, the realized gain of a transmission array with an incident angle of 0 degrees and a transmission angle of 0 degrees is 23.8 dB, and the sidelobe level is approximately 11.8 dB. From this, it can be seen that the transmission array in Figure 8A has the characteristics of transmission phase beam scanning in the 18 gigahertz (Ku frequency band) low Earth orbit satellite communication frequency band.

[0070] Figure 9A shows a schematic diagram of the configuration of a transmission array according to the fourth embodiment of the present invention, Figure 9B shows a polar coordinate diagram of the realized gain of the transmission array according to the fourth embodiment of the present invention after the bias voltage is applied, and Figure 9C shows a realized gain diagram of the transmission array according to the fourth embodiment of the present invention after the bias voltage is applied. Referring to Figures 9A to 9C, the transmission array in Figure 9A is composed of an array of multiple transmission unit cells (for example, the transmission unit cells shown in Figure 4A, whose average value of transmission coefficient is approximately 0.85 and whose phase change reaches 335 degrees), and is obtained by designing it with an incident angle of 30 degrees and a transmission angle of 0 degrees. Since 18 gigahertz electromagnetic waves have a longer wavelength than 28 gigahertz electromagnetic waves, a large unit cell (i.e., the transmission unit cell shown in Figure 4A) is targeted for incidence. In this embodiment, when 18 gigahertz electromagnetic waves are incident, the polar coordinate diagram of the realized gain of the patch unit acting may be as shown in Figure 9B, for example. Furthermore, as shown in Figure 9C, the realized gain of a transmission array with an incidence angle of 30 degrees and a transmission angle of 0 degrees is 22.7 dB, and the sidelobe level is approximately 11.9 dB. From this, it can be seen that the transmission array in Figure 9A has the characteristics of transmission phase beam scanning in the 18 gigahertz (Ku frequency band) low Earth orbit satellite communication frequency band.

[0071] Figure 10A shows a schematic diagram of the configuration of a transmission array according to the fifth embodiment of the present invention, Figure 10B shows a polar coordinate diagram of the realized gain of the transmission array according to the fifth embodiment of the present invention after the bias voltage is applied, and Figure 10C shows a realized gain diagram of the transmission array according to the fifth embodiment of the present invention after the bias voltage is applied. Referring to Figures 10A to 10C, the transmission array in Figure 10A is composed of an array of multiple transmission unit cells (for example, the transmission unit cells shown in Figure 4A, whose average value of transmission coefficient is approximately 0.85 and whose phase change reaches 335 degrees), and is obtained by designing it with an incident angle of 45 degrees and a transmission angle of 0 degrees. Since 18 gigahertz electromagnetic waves have a longer wavelength than 28 gigahertz electromagnetic waves, a large unit cell (i.e., the transmission unit cell shown in Figure 4A) is targeted for incidence. In this embodiment, when 18 gigahertz electromagnetic waves are incident, the polar coordinate diagram of the realized gain of the patch unit in action may be as shown in Figure 10B, for example. Furthermore, as shown in Figure 10C, the realized gain of a transmission array with an incidence angle of 45 degrees and a transmission angle of 0 degrees is 20.4 dB, and the sidelobe level is approximately 10.4 dB. From this, it can be seen that the transmission array in Figure 10A has the characteristics of transmission phase beam scanning in the 18 gigahertz (Ku frequency band) low Earth orbit satellite communication frequency band.

[0072] As described above, the active dual-band liquid crystal transmissive-reflective array structure provided by the embodiments of the present invention forms reflective unit cells and transmissive unit cells using components on different surface units. When no bias voltage is applied to the liquid crystal layer, the reflective unit cell can be used as a reflective surface, and its central operating frequency is located in the Ka frequency band, enabling it to meet the demands of 5G millimeter-wave communication. When a bias voltage is applied to the liquid crystal layer, the transmissive unit cell can be used as a transmissive surface, and its central operating frequency is located in the Ku frequency band, enabling it to meet the demands of low-Earth orbit satellite communication.

[0073] Finally, the embodiments described above are for illustrating the technical solutions of the present invention and are not limiting. Although the present invention has been described in detail with reference to the embodiments described above, those skilled in the art should understand that it is still possible to modify the technical solutions described in the embodiments above, or to substitute some or all of the technical features therein. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention. [Industrial applicability]

[0074] This invention provides an active dual-band liquid crystal transmissive-reflective array structure applicable to the 5G millimeter-wave communication frequency band and the low-Earth orbit satellite communication frequency band. [Explanation of Symbols]

[0075] 1: First substrate layer 11: First top surface 111: First surface unit 1111: First surface outer frame unit 1112: First surface cross-shaped patch 1113: First surface rectangular slit 1114: First surface rectangular slot hole 1115: First surface inner frame patch 12: First lower surface 121: Second surface unit 1211: Second surface rectangular patch 1212: Second surface cross-shaped slot hole 1213: Second surface metal wire 1214: Second surface cross-shaped opening 2: First liquid crystal layer 3: Second substrate layer 31:Second top surface 311: Third surface unit 3111: Third surface rectangular patch 3112: Third surface rectangular slot hole 3113: Third surface metal wire 3114: Third surface cross-shaped opening 32: Second bottom surface 321: Fourth surface unit

Claims

1. A first substrate layer having a first upper surface and a first lower surface, A second substrate layer having a second upper surface and a second lower surface, A first liquid crystal layer is laminated and connected between the first substrate layer and the second substrate layer, The first surface units are arranged in an array on the first upper surface, The second surface units are arranged in an array on the first lower surface, The third surface units are arranged in an array on the second upper surface, An active dual-band liquid crystal transmissive / reflective array structure including a fourth surface unit arranged in an array on the second lower surface, When no bias voltage is applied to the first liquid crystal layer, the central operating frequency of the active dual-band liquid crystal transmission-reflection array structure is within the first frequency band. When a bias voltage is applied to the first liquid crystal layer, the central operating frequency of the active dual-band liquid crystal transmission-reflection array structure is within the second frequency band. The first frequency band is higher than the second frequency band, and the structure is an active dual-band liquid crystal transmissive / reflective array.

2. The first surface unit includes four first surface outer frame patches and a first surface cross-shaped patch. Each of the aforementioned first surface outer frame patches has a first surface inner frame patch. The active dual-band liquid crystal transmissive / reflective array structure according to claim 1, wherein the four first surface outer frame patches are each arranged around the first surface cross-shaped patch.

3. The active dual-band liquid crystal transmissive / reflective array structure according to claim 2, wherein the second surface unit includes four second surface rectangular patches, a plurality of second surface metal wires connected to the edges of the four second surface rectangular patches, and a second surface cross-shaped slot hole located in the center of each of the second surface rectangular patches.

4. The active dual-band liquid crystal transmissive / reflective array structure according to claim 3, wherein the third surface unit includes four third surface rectangular patches, a plurality of third surface metal wires connected to the edges of the four third surface rectangular patches, and a third surface rectangular slot hole located in the center of each of the third surface rectangular patches.

5. The active dual-band liquid crystal transmission-reflection array structure according to claim 4, wherein the fourth surface unit is a fourth surface cross-shaped patch.

6. The active dual-band liquid crystal transmissive / reflective array structure according to claim 1, wherein the second surface unit includes four second surface rectangular patches, a plurality of second surface metal wires connected to the edges of the four second surface rectangular patches, and a second surface cross-shaped slot hole located in the center of each of the second surface rectangular patches.

7. The active dual-band liquid crystal transmissive / reflective array structure according to claim 1, wherein the third surface unit includes four third surface rectangular patches, a plurality of third surface metal wires connected to the edges of the four third surface rectangular patches, and a third surface rectangular slot hole located in the center of each of the third surface rectangular patches.

8. The active dual-band liquid crystal transmission-reflection array structure according to claim 1, wherein the fourth surface unit is a fourth surface cross-shaped patch.

9. The first part of the active dual-band liquid crystal transmissive / reflective array structure constitutes a reflective unit cell. The active dual-band liquid crystal transmissive-reflective array structure according to any one of claims 1 to 8, wherein when no bias voltage is applied to the first liquid crystal layer, the reflective unit cell is used as a reflective surface, and the central operating frequency of the reflective unit cell is within the first frequency band.

10. The active dual-band liquid crystal transmissive / reflective array structure according to any one of claims 1 to 8, wherein the first part of the active dual-band liquid crystal transmissive / reflective array structure includes a first surface outer frame patch in the first surface unit, a first surface inner frame patch in the first surface unit, a first substrate layer, a second surface rectangular patch in the second surface unit, a second surface metal wire in the second surface unit, a first liquid crystal layer, a second substrate layer, a third surface rectangular patch in the third surface unit, and a third surface metal wire in the third surface unit.

11. The second part of the active dual-band liquid crystal transmissive / reflective array structure constitutes a transmissive unit cell. The active dual-band liquid crystal transmissive / reflective array structure according to any one of claims 1 to 8, wherein when a bias voltage is applied to the first liquid crystal layer, the transmissive unit cell is used as a transmissive surface, and the central operating frequency of the transmissive unit cell is within the second frequency band.

12. The active dual-band liquid crystal transmissive-reflective array structure according to any one of claims 1 to 8, wherein the second part of the active dual-band liquid crystal transmissive-reflective array structure includes a first surface cross-shaped patch in the first surface unit, the first substrate layer, the second surface unit, the first liquid crystal layer, the third surface unit, the second substrate layer, and the fourth surface unit.

13. The active dual-band liquid crystal transmissive / reflective array structure according to any one of claims 1 to 8, wherein the first surface unit, the second surface unit, the third surface unit, and the fourth surface unit are all made of a metallic material.

14. The active dual-band liquid crystal transmission-reflection array structure according to any one of claims 1 to 8, wherein the dielectric constant and loss tangent loss of the first liquid crystal layer are 2.55 to 3.76 and 0.004 to 0.006, respectively, before and after a bias voltage is applied to the first liquid crystal layer.

15. The active dual-band liquid crystal transmissive / reflective array structure according to any one of claims 1 to 8, wherein the first frequency band is from 27 gigahertz to 29 gigahertz.

16. The active dual-band liquid crystal transmissive / reflective array structure according to any one of claims 1 to 8, wherein the second frequency band is 17 gigahertz to 19 gigahertz.

17. The active dual-band liquid crystal transmissive / reflective array structure according to any one of claims 1 to 8, wherein the number of the first surface unit, the second surface unit, the third surface unit, and the fourth surface unit is all N × N, where N is a positive integer.

18. The active dual-band liquid crystal transmissive / reflective array structure according to any one of claims 2 to 5, wherein there is a first surface rectangular slit between the first surface outer frame patch and the corresponding first surface inner frame patch, and each of the first surface inner frame patches has a first surface rectangular slot hole in the center.

19. The active dual-band liquid crystal transmissive / reflective array structure according to any one of claims 2 to 5, wherein the length and width of the first surface outer frame patch are 0.5 to 3.3 millimeters.

20. The active dual-band liquid crystal transmissive / reflective array structure according to any one of claims 2 to 5, wherein the first surface cross-shaped patch has a first longitudinal portion and a first transverse portion, and the lengths of the first longitudinal portion and the first transverse portion are 1.5 to 8.5 millimeters.

21. The active dual-band liquid crystal transmission / reflection array structure according to any one of claims 3 to 6, wherein a second surface cross-shaped opening is formed so as to surround the four second surface rectangular patches and the plurality of second surface metal wires.

22. The active dual-band liquid crystal transmissive / reflective array structure according to any one of claims 3 to 6, wherein the second surface cross-shaped slot hole has a second vertical portion and a second horizontal portion, the width of the second vertical portion and the second horizontal portion is 0.57 to 0.67 millimeters, and the length of the second vertical portion and the second horizontal portion is 3.25 to 3.35 millimeters.

23. The active dual-band liquid crystal transmission / reflection array structure according to any one of claims 4, 5, or 7, wherein a third surface cross-shaped opening is formed so as to surround the four third surface rectangular patches and the plurality of third surface metal wires.

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