Perovskite battery, its manufacturing method, and power consumption device

Abstract

This application relates to the technical field of solar cells, and more particularly to a perovskite cell, a manufacturing method thereof, and a power consumption device. The perovskite cell includes a first electrode layer disposed as an electrode layer for receiving light in the perovskite cell; a first carrier transport layer disposed on the first electrode layer and being one of a hole transport layer and an electron transport layer; a perovskite layer disposed on the first carrier transport layer on a side away from the first electrode layer; a second electrode layer disposed on the perovskite layer on a side away from the first electrode layer; and a first functional layer disposed on the perovskite layer on a side away from the first electrode layer and on one side in the thickness direction of the second electrode layer, the first functional layer being capable of reflecting, to the perovskite layer, at least a portion of light incident from the first electrode layer and transmitted through the perovskite layer. This application achieves high light utilization efficiency and high photoelectric conversion efficiency of the perovskite cell.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application references Chinese patent application No. 2023102189549, filed on March 9, 2023, entitled "Perovskite Battery and Manufacturing Method Thereof, and Power Consumption Device," the entire contents of which are incorporated herein by reference. [Technical Field]

[0002] The present application relates to the technical field of solar cells, and in particular to perovskite cells and their manufacturing methods, and power consumption devices. [Background technology]

[0003] In recent years, with the rapid development of solar cell technology, perovskite batteries have become a type of battery that has attracted attention. Perovskite batteries have advantages such as high conversion efficiency, easy manufacturing, a wide range of materials, and low cost, and have the potential for widespread application. However, the photoelectric conversion efficiency of perovskite batteries in related technologies is low. Summary of the Invention

[0004] Therefore, there is a need to provide a perovskite battery, a manufacturing method thereof, and a power consumption device to address the problem of low photoelectric conversion efficiency in perovskite batteries in the related art.

[0005] According to a first aspect, the present application provides a perovskite battery, the battery comprising: a first electrode layer disposed as an electrode layer for receiving light in the perovskite cell; a first carrier transport layer provided on the first electrode layer and being one of a hole transport layer and an electron transport layer; a perovskite layer provided on a side of the first carrier transport layer away from the first electrode layer; a second electrode layer located on a side of the perovskite layer away from the first electrode layer; and and a first functional layer located on a side of the perovskite layer away from the first electrode layer and on one side in the thickness direction of the second electrode layer, the first functional layer being capable of reflecting, to the perovskite layer, at least a portion of light that has entered from the first electrode layer and transmitted through the perovskite layer.

[0006] In the above solution, a first functional layer is provided, the first functional layer is located on the side of the perovskite layer away from the first electrode layer, and the first functional layer can reflect at least a portion of the light incident from the first electrode layer and transmitted through the perovskite layer back to the perovskite layer, thereby allowing the light that is not completely absorbed by the perovskite layer to be reintroduced into the perovskite layer, thereby increasing the light utilization efficiency and improving the photoelectric conversion efficiency of the perovskite cell.

[0007] In some embodiments, the material of the first functional layer is TiO2, ZnO, SnO2, Al2O3, MoO3, WO3, NiO x , ITO, FTO, AgBiS2, WS2, MoS2, LiF, MgF2, NaF, KF, Au, Ag, Cu, Al, and Cr.

[0008] By using these materials, the first functional layer can reflect light that is not fully utilized by the perovskite layer back to the perovskite layer, improving light utilization efficiency, stabilizing the properties of the first functional layer, and isolating the contact reaction between the second carrier transport layer material and water, oxygen, and dust in the environment, thereby improving the stability of the perovskite battery.

[0009] In some embodiments, the first functional layer has a thickness of 0.5 nm to 20 nm.

[0010] This thickness not only ensures good reflection of light transmitted through the perovskite layer by the first functional layer, but also sufficiently blocks the reaction between the second electrode layer and the second carrier transport layer, improves interfacial contact, and reduces charge accumulation at the interface.

[0011] In some embodiments, the perovskite battery further comprises a second carrier transport layer disposed between the perovskite layer and the second electrode layer, the second carrier transport layer being the other of a hole transport layer and an electron transport layer; wherein the first functional layer is provided between the perovskite layer and the second carrier transport layer; or The first functional layer is disposed between the second carrier transport layer and the second electrode layer, or the first functional layer is provided on a side of the second electrode layer that is away from the second carrier transport layer; or The first functional layer is simultaneously provided between the perovskite layer and the second carrier transport layer and between the second carrier transport layer and the second electrode layer; or The first functional layer is simultaneously provided between the perovskite layer and the second carrier transport layer and on the side of the second electrode layer facing away from the second carrier transport layer; or The first functional layer is simultaneously provided between the second carrier transport layer and the second electrode layer and on the side of the second electrode layer that is remote from the second carrier transport layer; or The first functional layer is simultaneously provided between the perovskite layer and the second carrier transport layer, between the second carrier transport layer and the second electrode layer, and on the side of the second electrode layer away from the second carrier transport layer.

[0012] The location of the first functional layer may be flexibly set according to actual needs, thereby enhancing the design flexibility of the perovskite battery.

[0013] In some embodiments, the first functional layer is disposed between the second carrier transport layer and the second electrode layer; The second electrode layer includes a second functional layer and a first metal layer stacked on the side of the first functional layer away from the second carrier transport layer, and the second functional layer is configured to be able to block the movement of iodine ions in the perovskite layer to the first metal layer.

[0014] In the above solution, the second electrode layer includes a second functional layer and a first metal layer stacked on the side of the first functional layer away from the second carrier transport layer, i.e., the second functional layer is located between the first functional layer and the first metal layer, i.e., the second functional layer separates the perovskite layer and the first metal layer.

[0015] The good conductivity and stable properties of the second functional layer prevent iodine ions from migrating from the perovskite layer to the first metal layer, which plays a role in charge transport, thus ensuring charge transport and effectively preventing the breakdown of the perovskite battery caused by the reaction between the second electrode layer and iodine ions in the perovskite layer.

[0016] In some embodiments, the material of the second functional layer is The material includes at least one of ITO, FTO, LiF, MgF2, and MoO3.

[0017] The use of these materials can improve the stability of the second functional layer, effectively inhibit the migration of iodine ions in the perovskite layer, and effectively reduce defects and recombination sites at the interface, thereby increasing the efficiency and improving the long-term stability of perovskite batteries.

[0018] In some embodiments, the second functional layer has a thickness of 5 nm to 30 nm.

[0019] This thickness not only effectively blocks iodine ions in the perovskite layer, but also does not affect the process of charge transport from the perovskite layer to the first metal layer.

[0020] In some embodiments, the surface of the perovskite layer facing away from the first carrier transport layer is roughened.

[0021] In this way, an undulating structural form is formed on the surface of the perovskite layer facing away from the first carrier transport layer, and compared to a planar structure, the surface area of ​​the surface of the perovskite layer facing the second carrier transport layer is increased, thereby increasing the absorption area of ​​light incident on the perovskite layer, improving the light utilization efficiency and the photoelectric conversion efficiency of the perovskite cell.

[0022] In some embodiments, the perovskite layer has a plurality of recessed structures on a surface facing away from the first carrier transport layer.

[0023] By providing the recessed structure, the portions where no recesses are formed become protruding structures, thereby forming an undulating rough surface on the surface of the perovskite layer.

[0024] In some embodiments, the shape of the inner contour of the recessed structure is an inverted pyramid.

[0025] In this way, each side surface of the recessed structure is inclined toward the second carrier transport layer, and when the recessed structure is manufactured using a mold in this way, it is easy to release it from the mold.

[0026] In some embodiments, the depth h1 of the recessed structure is 0

[0027] ​When the mold is used to cover the perovskite wet film to form a recessed structure, a portion of the wet film enters the cavity of the first mold, for example, the space between two adjacent protrusions. If the depth of the recessed structure is too large or the opening edge dimension of the recessed structure is large, too much perovskite precursor solution may enter the cavity of the first mold, resulting in a situation where some areas on the first carrier transport layer are not covered by the perovskite layer. Therefore, the depth h1 of the recessed structure is 0.

[0028] In some embodiments, the plurality of recessed structures are arranged in an array.

[0029] In this way, it becomes easy to form depression structures of uniform size over the entire perovskite layer.

[0030] According to a second aspect, the present application provides a power consuming device, the device including a battery as described above.

[0031] According to a third aspect, the present application provides a method for manufacturing a perovskite battery, the method comprising: forming a first carrier transport layer on the first electrode layer; forming a perovskite layer on a side of the first carrier transport layer away from the first electrode layer; forming a first functional layer on a side of the perovskite layer away from the first electrode layer; Here, the first carrier transport layer is one of a hole transport layer and an electron transport layer, the first electrode layer is provided as an electrode layer for receiving light in the perovskite cell, and the first functional layer can reflect at least a portion of the light that has entered from the first electrode layer and transmitted through the perovskite layer back to the perovskite layer.

[0032] ​In the above solution, a perovskite layer is formed on the side of the first carrier transport layer facing away from the first electrode layer, and a first functional layer is formed on the side of the perovskite layer facing away from the first electrode layer, and the first functional layer can reflect at least a portion of the light incident from the first electrode layer and transmitted through the perovskite layer back to the perovskite layer, thereby allowing the light that is not completely absorbed by the perovskite layer to be reintroduced into the perovskite layer, increasing the light utilization efficiency and improving the photoelectric conversion efficiency of the perovskite cell.

[0033] In some embodiments, the step of forming a perovskite layer on the side of the first carrier transport layer away from the first electrode layer comprises specifically: spin-coating a perovskite precursor solution onto the first carrier transport layer to form a perovskite interlayer; and covering the cavity of the first mold on the perovskite interlayer layer, and annealing and cooling the perovskite interlayer layer to form a perovskite layer having a roughened surface.

[0034] In the above method, a perovskite interlayer is formed on a first carrier transport layer, and the perovskite interlayer is covered using the cavity of the first mold. The interlayer is then annealed and cooled to form a perovskite layer with a rough surface. This method is not only low cost, but also has a simple manufacturing process and is easy to implement.

[0035] In some embodiments, the spin coating speed is 4000 rpm and the spin coating time is 20 s; or The annealing time length is 45 min and the annealing temperature is 120°C; or The rotation speed of the spin coater is 4000 rpm, the time length of the spin coater is 20 seconds, the time length of the annealing is 45 minutes, and the annealing temperature is 120°C.

[0036] The perovskite intermediate film layer formed by spin-coating the perovskite precursor solution on the first carrier transport layer is a wet film, and it is advantageous to smoothly form the recessed structure by setting the spin-coating rotation speed to 4000 rpm, the spin-coating time length to 20 s, and / or the annealing time length to 45 min and the annealing temperature to 120°C.

[0037] In some embodiments, the first mold cavity includes a plurality of protrusions disposed within the cavity; The step of covering the cavity of the first mold on the perovskite interlayer layer and annealing and cooling the perovskite interlayer layer to form a perovskite layer with a rough surface specifically includes: covering the cavity of the first mold on the perovskite interlayer layer, with the protrusions embedded in the perovskite interlayer layer; annealing and cooling the perovskite interlayer; The method includes a step of releasing the first mold from the perovskite intermediate film layer to form a perovskite layer having a plurality of recessed structures, the recessed structures corresponding one-to-one to the plurality of protrusions.

[0038] The protrusions formed in the cavity of the first mold are fitted into the perovskite intermediate film layer to form a recessed structure on the surface of the perovskite layer, so that the areas where no recesses have occurred become protruding structures, thereby forming an undulating rough surface on the surface of the perovskite layer. [Brief explanation of the drawings]

[0039] In order to more clearly explain the technical solutions of the embodiments of the present application, the following briefly introduces the drawings that need to be used in the embodiments of the present application. It is obvious that the drawings described below are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on the drawings without exerting any creative efforts. [Figure 1]1 is a structural schematic diagram of a perovskite battery according to some embodiments of the present application; [Figure 2] FIG. 1 is a structural schematic diagram of a manufacturing mold for a recessed structure on a perovskite layer in a perovskite battery according to some embodiments of the present application. [Figure 3] FIG. 3 is a left side view of FIG. 2. [Figure 4] FIG. 3 is a plan view of FIG. 2. [Figure 5] FIG. 1 is another structural schematic diagram of a perovskite battery according to some embodiments of the present application. [Figure 6] 1 is a flowchart of a method for manufacturing a perovskite battery according to some embodiments of the present application. [Figure 7] FIG. 2 is a schematic diagram illustrating forming a first carrier transport layer on a first electrode layer in a method for manufacturing a perovskite battery according to some embodiments of the present application. [Figure 8] FIG. 2 is a schematic diagram of forming a perovskite layer on a first carrier transport layer in a method for manufacturing a perovskite battery according to some embodiments of the present application. [Figure 9] FIG. 2 is a schematic diagram illustrating sequentially forming a second carrier transport layer and a first functional layer on a perovskite layer in a method for manufacturing a perovskite battery according to some embodiments of the present application. [Figure 10] FIG. 2 is a schematic diagram illustrating forming a second electrode layer on a first functional layer in a method for manufacturing a perovskite battery according to some embodiments of the present application. [Figure 11] FIG. 2 is a structural schematic diagram of a perovskite battery manufactured by another manufacturing method of a perovskite battery according to some embodiments of the present application. [Figure 12] 1 is a schematic diagram of the structure of a reticle in Example 1 of the present application. DETAILED DESCRIPTION OF THE INVENTION

[0040] In order to make the above-mentioned objects, features, and advantages of the present application clearer and easier to understand, the following detailed description of specific embodiments of the present application will be provided in conjunction with the drawings. In order to fully understand the present application, many specific details are set forth in the following description. However, the present application can be implemented in many other forms different from those described herein, and those skilled in the art can make similar improvements under circumstances that do not violate the connotation of the present application, so the present application is not limited to the specific embodiments disclosed below.

[0041] In the description of the present application, it should be understood that the orientations or positional relationships indicated by terms such as "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," etc. are orientations or positional relationships shown based on the drawings, and are intended merely for the convenience and simplification of the description of the present application. They do not indicate or imply that the referred devices or elements must have a specific orientation or be configured and operated in a specific orientation, and therefore should not be understood as limitations on the present application.

[0042] It should be noted that the terms "first" and "second" are for descriptive purposes only and should not be understood as expressing or suggesting relative importance or implicitly indicating the number of technical features shown. Thus, a feature qualified by "first" or "second" may explicitly or implicitly include one or more of the feature. In the description of this application, unless otherwise clearly and specifically limited, "plurality" means at least two, e.g., two, three, etc.

[0043] In this application, unless otherwise clearly specified and limited, the terms "attached," "coupled," "connected," "fixed," etc. should be understood in a broad sense, and may refer to, for example, a fixed connection, a detachable connection, or an integral connection, a mechanical connection, an electrical connection, a direct connection, an indirect connection via an intermediate medium, an internal communication between two elements, or an interactive relationship between two elements. Those skilled in the art can understand the specific meanings of the above terms in this application according to specific circumstances.

[0044] Unless otherwise clearly defined and limited in this application, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact with each other, or that the first and second features are in indirect contact with each other via an intermediate medium. Furthermore, a first feature being "above," "upper," and "on the upper surface" of a second feature may simply indicate that the first feature is directly above or diagonally above the second feature, or that the horizontal height of the first feature is higher than that of the second feature. A first feature being "below," "below," and "on the lower surface" of a second feature may simply indicate that the first feature is directly below or diagonally below the second feature, or that the horizontal height of the first feature is lower than that of the second feature.

[0045] It should be understood that when an element is referred to as being "fixed" or "mounted" to another element, it may be directly on the other element, or intermediate elements may be present. When an element is considered to be "connected" to another element, it may be directly connected to the other element, or intermediate elements may also be present. Terms such as "vertical," "horizontal," "top," "bottom," "left," "right," and similar expressions used herein are for descriptive purposes only and do not represent the only embodiment.

[0046] Solar cells, as an important representative of new energy, are a type of photovoltaic device that converts light into electricity. Conventional solar cells include crystalline silicon solar cells, cadmium telluride solar cells, copper indium gallium selenium solar cells and other film solar cells, which have a large market share, but their manufacturing process is polluting, energy consumption is high, and their power generation cost is still not competitive with traditional power generation methods.

[0047] Perovskite cells are a new type of solar cell that uses halogen-containing perovskite as the light-absorbing layer, and have the advantages of being easy to manufacture, widely available in a wide range of materials, and low cost, making them promising for widespread application. However, current perovskite cells have a low utilization rate of incident light, which leads to low photoelectric conversion efficiency of perovskite cells.

[0048] Perovskite cells in the related art generally include a transparent glass substrate (light incident surface), a conductive layer, a carrier transport layer, a perovskite light absorption layer, a carrier transport layer, and a back electrode layer, which are stacked in sequence. The inventors have conducted research and discovered the following: Light incident from the transparent glass substrate passes through each functional layer one by one and reaches the perovskite light absorption layer, but is unable to be completely absorbed. Some of the light is not absorbed and directly exits, resulting in light loss.

[0049] Through research, the inventors of the present application have found that if unused light can be reflected multiple times before it leaves the perovskite electronic assembly and absorbed by the perovskite layer before it leaves, the utilization rate of incident light can be greatly improved, and the photoelectric conversion efficiency of the perovskite cell can also be improved.

[0050] Based on this, the present application provides a perovskite battery, a manufacturing method thereof, and a power consumption device.

[0051] FIG. 1 is a structural schematic diagram of a perovskite battery according to some embodiments of the present application.

[0052] Referring to FIG. 1 , according to a first aspect, an embodiment of the present application provides a perovskite battery 100, comprising: a first electrode layer 10 disposed as an electrode layer into which light in the perovskite battery 100 is incident; a first carrier transport layer 20 disposed on the first electrode layer 10 and which is one of a hole transport layer and an electron transport layer; a perovskite layer 30 disposed on a side of the first carrier transport layer 20 facing away from the first electrode layer 10; a second electrode layer 60 located on the side of the perovskite layer 30 facing away from the first electrode layer 10; and a first functional layer 50 located on the side of the perovskite layer 30 facing away from the first electrode layer 10 and on one side in a thickness direction of the second electrode layer 60, the first functional layer 50 being capable of reflecting, to the perovskite layer 30, at least a portion of light incident from the first electrode layer 10 and transmitted through the perovskite layer 30.

[0053] In the above solution, a first functional layer 50 is provided, which is located on the side of the perovskite layer 30 that faces away from the first electrode layer 10, and the first functional layer 50 can reflect at least a portion of the light that is incident on the first electrode layer 10 and transmitted through the perovskite layer 30 back to the perovskite layer 30. This allows light that is not completely absorbed by the perovskite layer 30 to be reintroduced into the perovskite layer 30, thereby increasing the light utilization efficiency and improving the photoelectric conversion efficiency of the perovskite cell 100.

[0054] The inventors of the present application conducted experimental verification and found that in the perovskite battery 100 equipped with the first functional layer 50, the short-circuit current density significantly increased, the hysteresis effect of the perovskite battery 100 weakened, the difference in fill factor (FF) between the forward sweep and the reverse sweep was less than 3%, and the difference in photoelectric conversion efficiency (PCE) was less than 1%, indicating that the performance of the perovskite battery 100 improved after the addition of the first functional layer 50.

[0055] The first electrode layer 10 is provided as an electrode layer for receiving light in the perovskite cell 100, which means that external light enters the perovskite cell 100 through the first electrode layer 10, and the light incident from the first electrode layer 10 passes through the first carrier transport layer 20 before being irradiated onto the perovskite layer 30, generating electron-hole pairs in the perovskite layer 30.

[0056] It should be explained that the first functional layer 50 being located on the side of the perovskite layer 30 that faces away from the first electrode layer 10 means that the first functional layer 50 may be directly disposed on the side of the perovskite layer 30 that faces away from the first electrode layer 10, or that another functional layer may be further provided on the side of the perovskite layer 30 that faces away from the first electrode layer 10, and the first functional layer is located between the other functional layers. The first functional layer 50 being located on one side in the thickness direction of the second electrode layer 60 means that the first functional layer 50 may be located on the side of the second electrode layer 60 that faces the first electrode layer 10, or on the side of the second electrode layer 60 that faces away from the first electrode layer 10, and the thickness direction of the second electrode layer 60 may specifically refer to the stacking direction of the functional layers in the perovskite battery.

[0057] 1 , the perovskite battery 100 may further include a second carrier transport layer 40, which is disposed between the perovskite layer 30 and the second electrode layer 60, and which is the other of a hole transport layer and an electron transport layer. In some embodiments, the second electrode layer 60 may be a back electrode layer. Furthermore, the lamination here may be direct contact or lamination via an intermediate functional layer.

[0058] To facilitate understanding, the examples of the present application will be described taking as an example a case where the first carrier transport layer 20 is a hole transport layer and the second carrier transport layer 40 is an electron transport layer. However, the present application is not limited to this, and the first carrier transport layer 20 may be an electron transport layer and the second carrier transport layer 40 may be a hole transport layer. The arrangement of the other film layers in a perovskite battery with such a structure is similar to that of the perovskite battery 100 in which the first carrier transport layer 20 is a hole transport layer and the second carrier transport layer 40 is an electron transport layer, and therefore a description thereof will be omitted here.

[0059] For example, the first functional layer 50 may be provided as an entire layer, i.e., the entire layer forms a continuous film layer structure, and the shape of the outer contour may approximately match the shape of the outer contour of the perovskite layer 30.

[0060] Regarding the installation position of the first functional layer 50, the first functional layer 50 may be provided between the second carrier transport layer 40 and the second electrode layer 60. Of course, the present application is not limited thereto, and may include the following situations (not shown) in addition to the situation shown in FIG.

[0061] The first functional layer 50 is disposed between the perovskite layer 30 and the second carrier transport layer 40, and / or the first functional layer 50 is disposed on the side of the second electrode layer 60 that is away from the second carrier transport layer 40. As can be understood, the position of the first functional layer 50 may be flexibly set according to actual needs, which increases the design flexibility of the perovskite battery 100.

[0062] When the first functional layer 50 is disposed between the second carrier transport layer 40 and the second electrode layer 60, the interface structure is optimized, the interface contact is increased, and the decomposition of the perovskite layer 30 or the second carrier transport layer 40 caused by ions in the second electrode layer 60 passing through the second carrier transport layer 40 and reacting with the perovskite layer 30 can be prevented, the charge accumulation at the interface can be reduced, and the stability of the perovskite battery 100 during long-term operation can be improved.

[0063] For example, the first electrode layer 10 is a substrate having electrical conductivity, and may include a glass substrate 11 and a conductive layer 12 provided on the glass substrate 11 .

[0064] The glass substrate 11 serves as a support for the perovskite battery 100 and must meet the requirements of the perovskite battery 100 in terms of both translucency and strength. Materials for the glass substrate 11 include, but are not limited to, glass, PET (polyethylene terephthalate), PI (polyimide), etc.

[0065] The function of the conductive layer 12 is to guide the photo-generated carriers, and its material may be selected from one or a combination of FTO (F-doped tin oxide), ITO (In-doped tin oxide), and AZO (Al-doped zinc oxide), where FTO (F-doped tin oxide) is conductive and can simultaneously filter out ultraviolet light that is destructive to the perovskite layer 30.

[0066] The embodiments of the present application will be described taking the first electrode layer 10 as an example of FTO conductive glass, and the situation when the first electrode layer 10 is of other types is similar to this, and the description will be omitted here.

[0067] The first carrier transport layer 20 can transport holes and block electrons, and the material of the first carrier transport layer 20 can be 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (Spiro-OMeTAD), polytriarylamine (PTAA), NiO x , poly3,4-ethylenedioxythiophene:polystyrenesulfonate (PEDOT:PSS), and WO3.

[0068] The fact that the perovskite layer 30 is provided on the side of the first carrier transport layer 20 that is away from the first electrode layer 10 means that the perovskite layer 30 may be provided on the first carrier transport layer 20, or another intermediate functional layer may be provided between the perovskite layer 30 and the first carrier transport layer 20. The thickness of the perovskite layer 30 is generally 300 nm to 600 nm.

[0069] The second carrier transport layer 40 transports electrons and blocks holes, and the material of the second carrier transport layer 40 is typically one or a combination of TiO2, SnO2, ZnO, and [6,6]-phenyl-C61-isomethyl butyrate (PCBM).

[0070] The first functional layer 50 can reflect to the perovskite layer 30 at least a portion of the light that is incident from the first electrode layer 10 and passes through the perovskite layer 30. This means that after light that is not completely absorbed by the perovskite layer 30 passes through the second carrier transport layer 40 and reaches the first functional layer 50, at least a portion of the light is reflected by the first functional layer 50, returns to the perovskite layer 30, and is absorbed again by the perovskite layer 30, thereby significantly improving the utilization rate of the incident light.

[0071] The material of the second electrode layer 60 may be one or a combination of two or more of Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, MoO3, ITO, FTO, and AZO.

[0072] According to some embodiments of the present application, the material of the first functional layer 50 may optionally be generally an inorganic compound or a metal. Illustratively, the material of the first functional layer 50 may be TiO2, ZnO, SnO2, Al2O3, MoO3, WO3, NiO x , ITO, FTO, AgBiS2, WS2, MoS2, LiF, MgF2, NaF, KF, Au, Ag, Cu, Al, and Cr. That is, the material of the first functional layer 50 may be one or a combination of two or more of the above materials.

[0073] By using the above materials, the first functional layer 50 can reflect light that is not fully utilized by the perovskite layer 30 back to the perovskite layer 30, thereby improving light utilization efficiency. At the same time, the properties of the first functional layer 50 can be stabilized, and the contact reaction between water, oxygen, and dust in the environment and the material of the second carrier transport layer 40 can be isolated, improving the stability of the perovskite battery 100.

[0074] As can be appreciated, the material of the first functional layer 50 includes, but is not limited to, the materials listed above, and may be other inorganic compounds and metals, as long as it has the ability to reflect back to the perovskite layer 30 at least a portion of the light transmitted through the perovskite layer 30.

[0075] According to some embodiments of the present application, optionally, the thickness of the first functional layer 50 is between 0.5 nm and 20 nm.

[0076] This thickness not only improves the reflective effect of the first functional layer 50 on light transmitted through the perovskite layer 30, but also sufficiently blocks the reaction between the second electrode layer 60 and the second carrier transport layer 40, improves interfacial contact, and reduces charge accumulation at the interface.

[0077] The thickness of the first functional layer 50 may be set thin, thereby realizing a lightweight and thin structure of the perovskite battery 100. If the thickness of the first functional layer 50 is less than 0.5 nm, problems with poor light reflection may occur or the manufacturing costs may be high. If the thickness of the first functional layer 50 is greater than 20 nm, the transport of electrons from the perovskite layer 30 to the second electrode layer 60 may be blocked, affecting the performance of the perovskite battery 100.

[0078] In the examples of the present application, still referring to FIG. 1, in order to further improve the light utilization efficiency of the perovskite layer 30, the surface of the perovskite layer 30 facing away from the first carrier transport layer 20 is roughened.

[0079] In this way, an undulating structural form is formed on the surface of the perovskite layer 30 facing away from the first carrier transport layer 20, and compared to a planar structure, the surface area of ​​the surface of the perovskite layer 30 facing the second carrier transport layer 40 is increased, thereby increasing the absorption area of ​​light incident on the perovskite layer 30, improving the light utilization efficiency and improving the photoelectric conversion efficiency of the perovskite cell 100.

[0080] Specifically, a plurality of recessed structures 31 may be provided on the surface of the perovskite layer 30 facing away from the first carrier transport layer 20, thereby forming a roughened surface. It should be noted that the recessed structures 31 may be structures formed so as to be recessed from the surface of the perovskite layer 30 towards the first carrier transport layer 20. By providing the recessed structures 31, the areas where no recesses are formed become protruding structures, thereby forming an undulating roughened surface on the surface of the perovskite layer 30.

[0081] FIG. 2 is a structural schematic diagram of a mold for manufacturing a recess structure on a perovskite layer in a perovskite battery according to some embodiments of the present application, FIG. 3 is a left side view of FIG. 2, and FIG. 4 is a plan view of FIG. 2.

[0082] The roughened surface may be formed using a mold. For example, forming the recessed structures 31 may be performed using a first mold 70 as shown in Figures 2, 3, and 4. Here, the cavity 731 of the first mold 70 has a plurality of protrusions 71 therein. In the process of manufacturing the perovskite layer 30, simply by covering the cavity 731 of the first mold 70 with a wet perovskite film, after steps such as annealing and cooling, a plurality of recessed structures 31 can be formed on the surface of the perovskite layer 30 at positions corresponding to the plurality of protrusions 71.

[0083] 1 and 2, the first mold 70 includes a base 72 and a molding part 73 disposed on one surface of the base 72. The molding part 73 defines a cavity 731, and the cavity 731 includes a plurality of protrusions 71 protruding from the bottom surface of the cavity 731, the number of protrusions 71 being plural. The outer contour dimensions of the base 72 may be approximately the same as the outer contour dimensions of the glass substrate 11, and the thickness R of the base 72 is less than 0.5 mm.

[0084] In some embodiments, the material of the first mold 70 may be corrosion-resistant PTFE (polytetrafluoroethylene).

[0085] According to some embodiments of the present application, optionally, the shape of the inner contour of the recessed structure 31 is an inverted pyramid.

[0086] In this way, each side of the recessed structure 31 is inclined toward the first carrier transport layer 20, and thus when the recessed structure 31 is manufactured using the first mold 70, it is easy to release it from the mold.

[0087] It should be noted that the inverted pyramid shape here may be an inverted triangular pyramid shape, and accordingly, the surface of the first mold 70 is formed in a pyramid shape, and of course, the inverted pyramid shape of the recess structure 31 may be an inverted square pyramid shape, an inverted polygonal pyramid shape, etc.

[0088] According to some embodiments of the present application, still referring to FIG. 1, the depth h1 of the recessed structure 31 is 0

[0089] ​2, it can be seen that when the mold is used to cover the perovskite wet film to form the recessed structure 31, a portion of the wet film enters the cavity 731 of the first mold 70, for example, into the space between two adjacent protrusions 71. If the depth of the recessed structure 31 is too large or the dimension of the opening edge of the recessed structure 31 is large, too much perovskite precursor solution may enter the cavity 731 of the first mold 70, resulting in a situation where some areas on the first carrier transport layer 20 are not covered by the perovskite layer 30. If the depth h1 of the recessed structure 31 is too large, or if the opening edge dimension of the recessed structure 31 is too large, the amount of the perovskite precursor solution may become too large, resulting in a situation where some areas on the first carrier transport layer 20 are not covered by the perovskite layer 30.

[0090] Furthermore, the shape of the inner contour of the recessed structure 31 is configured as an inverted square pyramid, and the depth h1 of the recessed structure 31 is 0.

[0091] As can be understood, the protrusion 71 may have a quadrangular pyramidal structure in order to make the shape of the inner contour of the recessed structure 31 an inverted quadrangular pyramidal shape.

[0092] ​​​Here, when the protrusion height h2 is 20 nm (and correspondingly, h1 is 20 nm), the recessed structure 31 formed after annealing the perovskite layer 30 prevents the grain boundaries from widening, favoring the formation of a flat, dense light-absorbing layer and preventing voids between the grains from causing leakage current. The protrusion height h2 can also be 60 nm (and correspondingly, h1 is 60 nm), allowing recesses to be formed between the grains of the perovskite layer 30 without the grains penetrating and contacting the underside. Such deep recesses reduce the vertical transport distance of carriers, increasing carrier transport efficiency and reducing the probability of interface recombination, effectively improving the short-circuit current density Jsc and fill factor FF of the device.

[0093] According to some embodiments of the present application, the plurality of recessed structures 31 are arranged in an array. That is, the recessed structures 31 are arranged in rows and columns on the surface of the perovskite layer 30. In this way, it is easy to form recessed structures 31 of uniform size throughout the perovskite layer 30. It should be noted that the embodiments of the present application are described using an example in which there are 6 rows and 11 columns of protrusions 71 on the surface of the first mold 70, i.e., there are 66 recessed structures 31 on the surface of the perovskite layer 30, but the number of recessed structures 31 is not limited to this and may be set differently as needed.

[0094] FIG. 5 is another structural schematic diagram of a perovskite battery according to some embodiments of the present application.

[0095] According to some embodiments of the present application, referring to FIG. 5 , when the first functional layer 50 is provided between the second carrier transport layer 40 and the second electrode layer 60, the second electrode layer 60 includes a second functional layer 61 and a first metal layer 62 stacked on the side of the first functional layer 50 away from the second carrier transport layer 40, and the second functional layer 61 is configured to be able to block the movement of iodine ions in the perovskite layer 30 to the first metal layer 62.

[0096] In the perovskite battery of the related art, iodine ions in the perovskite layer are likely to migrate to the back electrode layer, and metal ions in the back electrode layer react with the iodine ions, causing oxidation and corrosion of the back electrode layer, thereby causing failure of the perovskite battery. In the above solution, the second electrode layer 60 includes a second functional layer 61 and a first metal layer 62 stacked on the side of the first functional layer 50 away from the second carrier transport layer 40. That is, the second functional layer 61 is located between the first functional layer 50 and the first metal layer 62, that is, the second functional layer 61 separates the perovskite layer 30 and the first metal layer 62.

[0097] The second functional layer 61 has good conductivity and stable properties, which inhibits the migration of iodine ions in the perovskite layer 30 to the first metal layer 62. The first metal layer 62 performs the function of charge transport, thus ensuring charge transport and effectively preventing failure of the perovskite battery 100 due to a reaction between the second electrode layer 60 and the iodine ions in the perovskite layer 30.

[0098] As described above, the second electrode layer 60 has a two-layer structure, in which the second functional layer 61 in contact with the second carrier transport layer 40 acts as a protective layer, and the first metal layer 62 is a conductive layer.

[0099] According to some embodiments of the present application, the material of the second functional layer 61 includes at least one of ITO, FTO, LiF, MgF2, and MoO3.

[0100] The use of the above materials improves the stability of the second functional layer 61, effectively inhibits the migration of iodine ions in the perovskite layer 30, and effectively reduces defects and recombination sites at the interface, thereby increasing the efficiency and improving the long-term stability of the perovskite battery 100.

[0101] According to some embodiments of the present application, optionally, the thickness of the second functional layer 61 is between 5 nm and 30 nm.

[0102] This thickness not only effectively blocks iodine ions in the perovskite layer 30 but also does not affect the process of charge transport from the perovskite layer 30 to the first metal layer 62.

[0103] According to some embodiments of the present application, optionally, the material of the first metal layer 62 may be a metallic material, including but not limited to Ag, Cu, Au, Al, Ni, and Cr, etc.

[0104] 1 and 5 , a perovskite battery 100 according to the embodiments of the present application includes a first electrode layer 10, a first carrier transport layer 20 provided on the first electrode layer 10, a perovskite layer 30 provided on the side of the first carrier transport layer 20 facing away from the first electrode layer 10, and a first functional layer 50 located on the side of the perovskite layer 30 facing away from the first electrode layer 10, wherein the first functional layer 50 can reflect, to the perovskite layer 30, at least a portion of light incident from the first electrode layer 10 and transmitted through the perovskite layer 30. By providing the first functional layer 50, the first functional layer 50 can reintroduce light that is not completely absorbed by the perovskite layer 30 into the perovskite layer 30, thereby increasing the light utilization efficiency and improving the photoelectric conversion efficiency of the perovskite battery 100. Here, the surface of the perovskite layer 30 facing away from the first carrier transport layer 20 is roughened, and for example, a plurality of recessed structures 31 are provided on the surface of the perovskite layer 30 facing away from the first carrier transport layer 20. In this way, an undulating structure is formed on the surface of the perovskite layer 30, which increases the surface area of ​​the perovskite layer 30 compared to a planar structure, thereby increasing the absorption area of ​​light incident on the perovskite layer 30 and further improving the photoelectric conversion efficiency of the perovskite cell 100. The second electrode layer 60 includes a second functional layer 61 and a first metal layer 62, and the second functional layer 61 and the first metal layer 62 are stacked and arranged on the side of the first functional layer 50 facing away from the second carrier transport layer 40. In this way, the second functional layer 61 can separate the perovskite layer 30 and the first metal layer 62, preventing iodine ions in the perovskite layer 30 from migrating to the first metal layer 62, effectively preventing failure of the perovskite battery 100 due to reaction between the second electrode layer 60 and the iodine ions in the perovskite layer 30.

[0105] According to a second aspect, an embodiment of the present application further provides a power consumption device, which includes the battery in any one of the above solutions.

[0106] It should be noted that the batteries disclosed herein may be used in power consuming devices such as, but not limited to, vehicles, watercraft, or aircraft, and the batteries disclosed herein may be used to configure the power supply system of the power consuming devices.

[0107] In the battery-powered power consumption device according to the embodiment of the present application, the power consumption device may be, but is not limited to, a mobile phone, a tablet, a laptop, an electric toy, an electric tool, a battery-powered vehicle, an electric car, a steamship, a spacecraft, a space station, etc. Here, the electric toy may include stationary or mobile electric toys, such as a game console, an electric car toy, an electric steamship toy, and an electric plane toy.

[0108] According to a third aspect, the embodiments of the present application further provide a method for manufacturing a perovskite battery, which is used to manufacture the perovskite battery 100 in any one of the above solutions.

[0109] FIG. 6 is a flowchart of a method for manufacturing a perovskite battery according to some embodiments of the present application.

[0110] Combining FIG. 1 and FIG. 6, the manufacturing method of the perovskite battery of this example is as follows: forming a first carrier transport layer on the first electrode layer; forming a perovskite layer on the first carrier transport layer on a side away from the first electrode layer (S20); and forming a first functional layer S30 on the side of the perovskite layer away from the first electrode layer.

[0111] Here, the first electrode layer is provided as an electrode layer into which light is incident in the perovskite cell, and the first functional layer can reflect at least a portion of the light that has entered from the first electrode layer and transmitted through the perovskite layer back to the perovskite layer.

[0112] In the above solution, a perovskite layer 30 is formed on the side of the first carrier transport layer 20 facing away from the first electrode layer 10, and a first functional layer 50 is formed on the side of the perovskite layer 30 facing away from the first electrode layer 10, and the first functional layer 50 can reflect at least a portion of the light incident from the first electrode layer 10 and transmitted through the perovskite layer 30 back to the perovskite layer 30. This allows light that is not completely absorbed by the perovskite layer 30 to be reintroduced into the perovskite layer 30, increasing the light utilization efficiency and improving the photoelectric conversion efficiency of the perovskite cell 100.

[0113] Here, the first electrode layer 10 is a substrate having electrical conductivity, and may include a glass substrate 11 and a conductive layer 12 provided on the glass substrate 11 .

[0114] The glass substrate 11 serves as a support for the perovskite battery 100 and must meet the requirements of the perovskite battery 100 in terms of both translucency and strength. Materials for the glass substrate 11 include, but are not limited to, glass, PET (polyethylene terephthalate), PI (polyimide), etc.

[0115] The function of the conductive layer 12 is to guide the photo-generated carriers, and its material may be selected from one or a combination of FTO (F-doped tin oxide), ITO (In-doped tin oxide), and AZO (Al-doped zinc oxide), where FTO (F-doped tin oxide) is conductive and can simultaneously filter out ultraviolet light that is destructive to the perovskite layer 30.

[0116] The embodiments of the present application will be described taking the first electrode layer 10 as an example of FTO conductive glass, and the situation when the first electrode layer 10 is of other types is similar to this, and the description will be omitted here.

[0117] The first carrier transport layer 20 can transport holes and block electrons, and the material of the first carrier transport layer 20 can be 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (Spiro-OMeTAD), polytriarylamine (PTAA), NiO x , poly3,4-ethylenedioxythiophene:polystyrenesulfonate (PEDOT:PSS), and WO3.

[0118] The first functional layer 50 can reflect to the perovskite layer 30 at least a portion of the light that is incident from the first electrode layer 10 and passes through the perovskite layer 30. This means that after light that is not completely absorbed by the perovskite layer 30 passes through the second carrier transport layer 40 and reaches the first functional layer 50, at least a portion of the light is reflected by the first functional layer 50, returns to the perovskite layer 30, and is absorbed again by the perovskite layer 30, thereby significantly improving the utilization rate of the incident light.

[0119] The material of the second electrode layer 60 may be one or a combination of two or more of Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, MoO3, ITO, FTO, and AZO.

[0120] In the embodiment of the present application, in steps S20 and S30, forming a perovskite layer 30 on the side of the first carrier transport layer 20 away from the first electrode layer 10 and forming a first functional layer 50 on the side of the perovskite layer 30 away from the first electrode layer 10 specifically includes forming a perovskite layer 30 on the side of the first carrier transport layer 20 away from the first electrode layer 10, and forming the first functional layer 50 on the perovskite layer 30.

[0121] In some other examples, in steps S20 and S30, forming a perovskite layer 30 on the side of the first carrier transport layer 20 away from the first electrode layer 10 and forming a first functional layer 50 on the side of the perovskite layer 30 away from the first electrode layer 10 specifically includes sequentially forming a perovskite layer 30, a second carrier transport layer 40, a second electrode layer 60, and a first functional layer 50 on the side of the first carrier transport layer 20 away from the first electrode layer 10.

[0122] In some other examples, in steps S20 and S30, forming a perovskite layer 30 on the side of the first carrier transport layer 20 away from the first electrode layer 10 and forming a first functional layer 50 on the side of the perovskite layer 30 away from the first electrode layer 10 specifically includes sequentially forming a perovskite layer 30, a second carrier transport layer 40, a first functional layer 50, and a second electrode layer 60 on the side of the first carrier transport layer 20 away from the first electrode layer 10, as shown in FIG. 1 .

[0123] As can be seen, when the first functional layer 50 is disposed between the second carrier transport layer 40 and the second electrode layer 60, the first functional layer 50 can block reactions between the second electrode layer 60 and the second carrier transport layer 40, improve interfacial contact, and reduce charge accumulation at the interface. During the manufacturing process, the first functional layer 50 can also protect the second carrier transport layer 40 from the previous process, preventing the second carrier transport layer 40 from reacting with water or oxygen in the environment and being decomposed, thereby improving the long-term stability of the perovskite battery 100.

[0124] In the embodiment of the present application, the step of forming the first functional layer 50 on the second carrier transport layer 40 specifically includes:

[0125] The first functional layer 50 is formed by depositing a LiF layer or an MgF layer on the second carrier transport layer 40 using a vacuum thermal evaporation method, or by depositing an AlO layer on the second carrier transport layer 40 using an atomic layer deposition method, or by depositing a NiO layer on the second carrier transport layer 40 using a magnetron sputtering method. x Layers are deposited to form the first functional layer 50 .

[0126] The above materials are used to form the first functional layer 50, which can reflect light that is not fully utilized by the perovskite layer 30 back to the perovskite layer 30, improving light utilization efficiency. At the same time, the properties of the first functional layer 50 can be stabilized, and the contact reaction between water, oxygen, and dust in the environment and the material of the second carrier transport layer 40 can be isolated, improving the stability of the perovskite battery 100.

[0127] Methods for forming the first functional layer 50 include, but are not limited to, spin coating, evaporation physical vapor deposition, sputtering physical vapor deposition, atomic layer deposition, and the like.

[0128] According to some embodiments of the present application, in step S20, forming the perovskite layer 30 on the side of the first carrier transport layer 20 away from the first electrode layer 10 may involve directly forming the perovskite layer 30 on the first carrier transport layer 20, or may involve forming another intermediate functional layer on the first carrier transport layer 20 and then forming the perovskite layer 30 on the other intermediate functional layer.

[0129] Specifically, the step of forming the perovskite layer 30 on the first carrier transport layer 20 includes: spin-coating a perovskite precursor solution onto the first carrier transport layer 20 to form a perovskite intermediate layer; and covering the cavity 731 of the first mold 70 onto the perovskite interlayer layer, and annealing and cooling the perovskite interlayer layer to form a perovskite layer 30 having a roughened surface.

[0130] In the above solution, a perovskite interlayer is formed on the first carrier transport layer 20, and the cavity 731 of the first mold 70 is used to cover the perovskite interlayer. The interlayer is then annealed and cooled to form a perovskite layer 30 with a rough surface. This is not only low cost, but also has a simple manufacturing process and is easy to implement.

[0131] Furthermore, since a rough surface is formed on the surface of the perovskite layer 30, the surface of the perovskite layer 30 forms an undulating structure, which increases the surface area of ​​the surface of the perovskite layer 30 that faces away from the first carrier transport layer 20 compared to a planar structure, thereby increasing the absorption area of ​​light incident on the perovskite layer 30, thereby increasing the light utilization efficiency and improving the photoelectric conversion efficiency of the perovskite cell 100.

[0132] Here, the perovskite precursor solution is spin-coated onto the first carrier transport layer 20, and the perovskite intermediate film layer formed on the first carrier transport layer 20 is a wet film. At this time, the cavity 731 of the first mold 70 is covered on the perovskite intermediate film layer, and after the wet film is annealed and cooled, the surface of the perovskite layer can be formed as a rough surface.

[0133] In the embodiment of the present application, there are a plurality of protrusions 71 in the cavity 731 of the first mold 70, and exemplarily, the protrusions 71 protrude along the thickness direction of the perovskite interlayer layer. Furthermore, covering the cavity 731 of the first mold 70 on the perovskite interlayer layer and annealing and cooling the perovskite interlayer layer to form the perovskite layer 30 with a rough surface specifically includes:

[0134] The cavity 731 of the first mold 70 is placed on the perovskite interlayer, where the protrusions 71 are embedded in the perovskite interlayer, the perovskite interlayer is annealed and cooled, and the first mold 70 is demolded from the perovskite interlayer to form a perovskite layer 30 having a plurality of recessed structures 31, where the recessed structures 31 correspond one-to-one to the plurality of protrusions 71.

[0135] In this way, by forming recessed structures 31 on the surface of the perovskite layer 30, the areas where no recesses are formed become protruding structures, thereby forming an undulating rough surface on the surface of the perovskite layer 30.

[0136] According to some embodiments of the present application, the spin coating speed is 4000 rpm, the spin coating time is 20 s, and / or the annealing time is 45 min, and the annealing temperature is 120°C.

[0137] The perovskite intermediate film layer formed by spin-coating the perovskite precursor solution on the first carrier transport layer 20 is a wet film, and it is advantageous to smoothly form the recessed structure 31 by setting the spin-coating rotation speed to 4000 rpm, the spin-coating time length to 20 s, and / or the annealing time length to 45 min and the annealing temperature to 120°C.

[0138] According to some embodiments of the present application, the step of covering the cavity 731 of the first mold 70 on the perovskite interlayer layer specifically includes: The method includes covering the cavity 731 of the first mold 70 with the perovskite interlayer layer under vacuum conditions, which is not only beneficial to the smooth formation of the recessed structure 31 but also beneficial to the deposition process of the perovskite layer 30.

[0139] According to some embodiments of the present application, as described above, in steps S20 and S30, forming a perovskite layer 30 on the side of the first carrier transport layer 20 away from the first electrode layer 10 and forming a first functional layer 50 on the side of the perovskite layer 30 away from the first electrode layer 10 specifically includes sequentially forming a perovskite layer 30, a second carrier transport layer 40, a first functional layer 50, and a second electrode layer 60 on the side of the first carrier transport layer 20 away from the first electrode layer 10.

[0140] Specifically, the step of forming the second electrode layer 60 on the first functional layer 50 specifically includes: forming a second functional layer 61 on the first functional layer 50; and forming a first metal layer 62 on the second functional layer 61.

[0141] In the above method, a second functional layer 61 is formed on the first functional layer 50, and a first metal layer 62 is formed on the second functional layer 61, so that the second functional layer 61 is positioned between the first functional layer 50 and the first metal layer 62, i.e., the second functional layer 61 separates the perovskite layer 30 and the first metal layer 62.

[0142] The second functional layer 61 has good conductivity and stable properties, which prevents the migration of iodine ions in the perovskite layer 30 to the first metal layer 62, thereby preventing breakdown of the perovskite battery 100. The first metal layer 62 also functions as a charge transport layer, ensuring charge transport and effectively preventing breakdown of the perovskite battery 100 due to a reaction between the second electrode layer 60 and the iodine ions in the perovskite layer 30.

[0143] The second functional layer 61 may be an inorganic compound layer, and the material thereof may include at least one of ITO, FTO, LiF, MgF2, and MoO3.

[0144] The use of the above materials improves the stability of the second functional layer 61, effectively inhibits the migration of iodine ions in the perovskite layer 30, and effectively reduces defects and recombination sites at the interface, thereby increasing the efficiency and improving the long-term stability of the perovskite battery 100.

[0145] According to some embodiments of the present application, optionally, the thickness of the second functional layer 61 is between 5 nm and 30 nm.

[0146] This thickness not only effectively blocks iodine ions in the perovskite layer 30 but also does not affect the process of charge transport from the perovskite layer 30 to the first metal layer 62.

[0147] According to some embodiments of the present application, optionally, the material of the first metal layer 62 may be a metallic material, including but not limited to Ag, Cu, Au, Al, Ni, and Cr, etc.

[0148] According to some embodiments of the present application, the step of selectively forming the second functional layer 61 on the first functional layer 50 specifically includes: The method includes depositing a LiF layer or an ITO layer on the first functional layer 50 using a vacuum thermal evaporation method to form an inorganic compound layer.

[0149] The second functional layer 61 employs a LiF layer or an ITO layer, which improves the stability of the second functional layer 61, effectively inhibits the migration of iodine ions in the perovskite layer 30, and effectively reduces defects and recombination sites at the interface, thereby increasing the efficiency and improving the long-term stability of the perovskite battery 100.

[0150] Hereinafter, several specific examples will be given to describe the manufacturing method of the perovskite battery 100 according to the embodiments of the present application.

[0151] Example 1: FIG. 7 is a schematic diagram of forming a first carrier transport layer on a first electrode layer in a method for manufacturing a perovskite battery according to some embodiments of the present application; FIG. 8 is a schematic diagram of forming a perovskite layer on a first carrier transport layer in a method for manufacturing a perovskite battery according to some embodiments of the present application; FIG. 9 is a schematic diagram of sequentially forming a second carrier transport layer and a first functional layer on a perovskite layer in a method for manufacturing a perovskite battery according to some embodiments of the present application; and FIG. 10 is a schematic diagram of forming a second electrode layer on the first functional layer in a method for manufacturing a perovskite battery according to some embodiments of the present application.

[0152] The method for manufacturing the perovskite battery 100 includes the following steps.

[0153] A) Referring to Figure 7, a 2x2cm FTO conductive glass substrate was prepared. Localized areas on the FTO conductive glass were laser etched, and the FTO etching in these localized areas was removed to form insulating areas on the FTO conductive glass. The substrate was then ultrasonically treated for 20 minutes using deionized water, detergent, ethanol, isopropanol, acetone, ethanol, and deionized water, followed by blow drying with N2 to form a clean first electrode layer 10 ready for use.

[0154] B) NiO x The nanoparticle solution was spin-coated at 3000 rpm onto the 2x2 cm first electrode layer 10 prepared in step A), annealed at 200°C for 15 min, and allowed to cool naturally for use, thereby forming a first carrier transport layer 20 with a thickness of 15 nm.

[0155] C) FA at a concentration of 1M 0.9 Cs 0.1 A PbI3 perovskite precursor solution was prepared using DMF (N,N-dimethylformamide) as the solvent. The solution was stirred to produce a perovskite precursor solution, which was then sealed and ready for use.

[0156] D) Referring to FIG. 8 , the first electrode layer 10 having the first carrier transport layer 20 formed thereon produced in step B) is treated with ultraviolet ozone for 15 minutes, and then the surface is purged clean. The perovskite precursor solution produced in step C) is taken and spin-coated at 4000 rpm for 20 seconds onto the purged first carrier transport layer 20 to produce a perovskite intermediate film layer, i.e., a perovskite wet film. After 30 seconds of vacuuming, the cavity 731 of the first mold 70 is covered on the perovskite intermediate film layer. This is then annealed on a hot stage at 120°C for 45 minutes and allowed to cool naturally, resulting in a perovskite layer 30 having a plurality of recessed structures 31. Here, the dimensions of the first mold 70 are 2x2 cm, the height h2 of the inverted pyramid structure is <100 nm, and the length of the base is <100 nm (the height of the inverted pyramid in the mold used specifically is 60 nm, and the length of the base is 80 nm), and the thickness of the perovskite layer is 500 nm, and h1 is <100 nm (specifically, h1 = 50 nm).

[0157] E) Referring to Figure 9, a PCBM (phenyl-C61-isomethyl butyrate) / BCP (bathocuproine) solution was spin-coated at 3000 rpm onto the perovskite layer 30 formed in step D) to form a second carrier transport layer 40. Here, the PCBM had a thickness of 20 nm, and the BCP had a thickness of 7 nm.

[0158] F) Still referring to FIG. 9, a 1 nm thick LiF layer was deposited on the second carrier transport layer 40 by vacuum thermal evaporation to form the first functional layer 50.

[0159] G) Referring to Figure 10, a vacuum thermal evaporation method was used to deposit a Cu counter electrode on the first functional layer 50 formed in step F) using a reticle with a specific pattern as shown in Figure 12, thereby forming a second electrode layer 60. Here, the thickness of the deposited Cu is 100 nm. The unit of dimensions in Figure 12 is mm.

[0160] The perovskite battery manufactured in the above steps A) to G) was designated as A1.

[0161] When further improving the above embodiment, step F) Alternatively, a vacuum thermal evaporation method may be used to deposit a 5 nm thick LiF layer on the second carrier transport layer 40 to form the first functional layer 50. In this case, the perovskite battery manufactured through steps A) to G) is designated as A2.

[0162] Or when further improving the above embodiment, step F) Alternatively, atomic layer deposition may be used to deposit a 1 nm thick Al2O3 layer on the second carrier transport layer 40 to form the first functional layer 50. In this case, the perovskite battery manufactured through steps A) to G) is designated as A3.

[0163] Or when further improving the above embodiment, step F) Alternatively, a vacuum thermal evaporation method may be used to deposit a 1 nm thick MgF layer on the second carrier transport layer 40 to form the first functional layer 50. In this case, the perovskite battery manufactured through steps A) to G) is designated as A4.

[0164] Or when further improving the above embodiment, step F) A 15 nm thick NiO film was deposited on the second carrier transport layer 40 by magnetron sputtering. x This may be replaced by a step of depositing a layer to form the first functional layer 50, and in this case, the perovskite battery manufactured through steps A) to G) is designated as A5.

[0165] Or when further improving the above embodiment, step F) Alternatively, a vacuum thermal evaporation method may be used to deposit a 0.5 nm thick LiF layer on the second carrier transport layer 40 to form the first functional layer 50. In this case, the perovskite battery manufactured through steps A) to G) is designated as A6'.

[0166] Or when further improving the above embodiment, step F) Alternatively, a vacuum thermal evaporation method may be used to deposit a 20 nm thick LiF layer on the second carrier transport layer 40 to form the first functional layer 50. In this case, the perovskite battery manufactured through steps A) to G) is designated as A7'.

[0167] Comparative Example 1: Step F) in the above example was omitted, and steps A), B), C), D), and E) were performed. Then, a vacuum thermal evaporation method was used to deposit a Cu counter electrode on the second carrier transport layer 40 formed in step E) using a specific pattern reticle. The steps and parameters were the same as those of the A1 perovskite battery, and a perovskite battery was obtained, designated C1.

[0168] The photoelectric conversion efficiency test and the stability test were performed on the perovskite cells A1, A2, A3, A4, A5, A6', A7', and C1. The test results at time t1 were recorded in Table 1, the test results at time t2 were recorded in Table 2, and the results at time t1 were recorded in Table 3. <t2である。

[0169] Here, Voc is the open circuit voltage, Jsc is the short circuit current density, FF is the fill factor, and PCE is the photoelectric conversion efficiency.

[0170] [Table 1]

[0171] [Table 2]

[0172] As can be seen from Tables 1 and 2, the open circuit voltage Voc, short circuit current density Jsc, fill factor FF, and photoelectric conversion efficiency PCE of the perovskite cells A1, A2, A3, A4, A5, A6', and A7' provided with the first functional layer 50 are all higher than those of the perovskite cell C1 not provided with the first functional layer 50. This indicates that the light utilization efficiency of the perovskite cell 100 after the first functional layer 50 is provided is higher, and the photoelectric conversion efficiency of the perovskite cell 100 is improved.

[0173] Then, after a certain time (t2-t1), for example 500 hours, the percentages of the photoelectric conversion efficiency PCE relative to the initial time for the perovskite cells A1, A2, A3, A4, A5, A6', and A7' provided with the first functional layer 50, and the perovskite cell C1 not provided with the first functional layer 50, are as follows:

[0174] A1, 14.12 / 15.04=93.9% A2, 14.58 / 15.65=93.2% A3, 14.54 / 16.02=90.8% A4, 14.95 / 16.55=90.3% A5, 14.79 / 15.09=98% A6', 12.02 / 13.31=90.3% A7', 13.64 / 14.71=92.7% C1, 10.85 / 12.67=85.6%

[0175] As can be seen from the above calculation results, after a certain time (t2-t1), the photoelectric conversion efficiencies of the perovskite cells A1, A2, A3, A4, A5, A6', and A7' provided with the first functional layer 50 were 90% or more of their initial values, and the amount of decrease was smaller than that of the perovskite cell C1 not provided with the first functional layer 50. This indicates that the long-term stability of the perovskite cells A1, A2, A3, A4, A5, A6', and A7' provided with the first functional layer 50 is superior to that of the perovskite cell C1 not provided with the first functional layer 50.

[0176] Example 2: FIG. 11 is a structural schematic diagram of a perovskite battery manufactured by another manufacturing method of a perovskite battery according to some embodiments of the present application.

[0177] Referring to FIG. 11, the method for manufacturing the perovskite battery 100 includes the following steps.

[0178] H) A 2x2cm FTO conductive glass was provided, and a localized area on the FTO conductive glass was laser etched. The FTO etching in the localized area was removed to form an insulating area on the FTO conductive glass. The FTO conductive glass was then ultrasonically treated for 20 minutes using deionized water, detergent, ethanol, isopropanol, acetone, ethanol, and deionized water, followed by blow drying with N2 to form a clean first electrode layer 10 ready for use.

[0179] I) NiO x The nanoparticle solution was spin-coated at 3000 rpm onto the 2x2 cm first electrode layer 10 prepared in step A), annealed at 200°C for 15 min, and allowed to cool naturally for use, thereby forming a first carrier transport layer 20 with a thickness of 15 nm.

[0180] J) FA at a concentration of 1M 0.9 Cs 0.1 A PbI3 perovskite precursor solution was prepared using DMF (N,N-dimethylformamide) as the solvent. The solution was stirred to produce a perovskite precursor solution, which was then sealed and ready for use.

[0181] K) The first electrode layer 10 having the first carrier transport layer 20 formed thereon, produced in step I), was treated with ultraviolet ozone for 15 minutes, and then the surface was purged clean. The perovskite precursor solution produced in step J) was taken and spin-coated at 4000 rpm for 20 seconds onto the clean, purged first carrier transport layer 20 to produce a perovskite wet film. This was then evacuated for 30 seconds, annealed on a hot stage at 120°C for 45 minutes, and allowed to cool naturally, resulting in a first perovskite layer 30' having a thickness of 500 nm.

[0182] L) A PCBM (phenyl-C61-isomethyl butyrate) / BCP (bathocuproine) solution was spin-coated at 3000 rpm onto the first perovskite layer 30′ formed in step K) to form a second carrier transport layer 40. Here, the PCBM had a thickness of 25 nm, and the BCP had a thickness of 7 nm.

[0183] M) A vacuum thermal evaporation method was used to deposit a 10 nm thick LiF layer on the second carrier transport layer 40 to form the second functional layer 61, and a 70 nm thick Cu counter electrode was deposited on the second functional layer 61 to form the first metal layer 62.

[0184] The perovskite battery manufactured in the above steps H) to M) was designated as A6.

[0185] When further improving the above embodiment, step M) may be replaced with a step of depositing a 20 nm thick LiF layer on the second carrier transport layer 40 using vacuum thermal evaporation to form the second functional layer 61, and depositing a 60 nm thick Cu counter electrode on the second functional layer 61 to form the first metal layer 62. In this case, the perovskite battery manufactured through steps H) to M) is designated as A7.

[0186] When further improving the above embodiments, step M) may be replaced with the step of adopting the vacuum thermal evaporation method to deposit an ITO layer with a thickness of 30 nm on the second carrier transport layer 40 to form a second functional layer 61, and depositing a 40-nm Cu counter electrode on the second functional layer 61 to form a first metal layer 62. In this case, the perovskite battery manufactured through steps H) to M) is designated as A8.

[0187] When further improving the above embodiments, step M) may be replaced with the step of adopting the magnetron sputtering method to deposit an ITO layer with a thickness of 5 nm on the second carrier transport layer 40 to form a second functional layer 61, and depositing a 70-nm Cu counter electrode on the second functional layer 61 to form a first metal layer 62. In this case, the perovskite battery manufactured through steps H) to M) is designated as A9.

[0188] Also, the components of the perovskite precursor solution are not limited to those listed in the above embodiments, and may be FA 1-x Cs x Pb(I 1-y Br y ) where 0 < x, y < 1, the concentration is 0.8 to 1.5 M, and the solvent used is one of DMF (N,N-dimethylacetamide), DMSO (dimethyl sulfoxide), and NMP (1-methyl-2-pyrrolidone), or a mixture of two in a certain volume ratio.

[0189] Comparative Example 2: Step M) in the above embodiments was replaced with the step of adopting the vacuum thermal evaporation method to deposit a 70-nm Cu counter electrode on the second carrier transport layer 40 to form a second electrode layer 60. At this time, the perovskite battery manufactured through steps H) to M) is designated as C2.

[0190] Photovoltaic conversion efficiency tests and stability tests were conducted on perovskite batteries A6, A7, A8, and C2, and the test results at time t3 were recorded in Table 3, the test results at time t4 were recorded in Table 4, and t3 < t4.

[0191] Here, Voc is the open circuit voltage, Jsc is the short circuit current density, FF is the fill factor, and PCE is the photoelectric conversion efficiency.

[0192] [Table 3]

[0193] [Table 4]

[0194] As can be seen from Tables 3 and 4, the open circuit voltage Voc, short circuit current density Jsc, fill factor FF, and photoelectric conversion efficiency PCE of the perovskite cells A6, A7, A8, and A9 provided with the second functional layer 61 are all higher than those of the perovskite cell C2 not provided with the second functional layer 61. This indicates that the light utilization efficiency of the perovskite cells after the second functional layer 61 is provided is higher, and the photoelectric conversion efficiency of the perovskite cells is improved.

[0195] Then, after a certain time (t4-t3), for example 500 hours, the percentages of the photoelectric conversion efficiency PCE relative to the initial time for the perovskite cells A6, A7, A8, and A9 provided with the second functional layer 61, and the perovskite cell C2 not provided with the second functional layer 61, are as follows:

[0196] A6, 16.63 / 17.47=95.2% A7, 16.05 / 16.55=97.0% A8, 17.43 / 17.80=97.9% A9, 14.35 / 16.26=88.3% C2, 12.92 / 15.13=85.4%

[0197] As can be seen from the above calculation results, after a certain time (t4-t3) has elapsed, the decrease in photoelectric conversion efficiency of the perovskite cells A6, A7, A8, and A9 provided with the second functional layer 61 is smaller than that of the perovskite cell C2 not provided with the second functional layer 61, which indicates that the stability of the perovskite cells A6, A7, A8, and A9 provided with the second functional layer 61 is superior to that of the perovskite cell C2 not provided with the second functional layer 61.

[0198] The technical features of the embodiments described above may be combined in any manner, and for the sake of brevity, not all possible combinations of the technical features in the above embodiments are described comprehensively. However, as long as there is no contradiction in the combinations of these technical features, they should all be considered to be within the scope of the description of this specification.

[0199] The above-described examples only show some embodiments of the present application, and the descriptions are detailed and specific, but for that reason, they should not be understood as limitations on the patent scope of the present invention. It should be noted that those skilled in the art can make further modifications and improvements without departing from the concept of the present application, all of which fall within the scope of protection of the present application. Therefore, the scope of protection of the patent of the present application should be governed by the appended claims. [Explanation of symbols]

[0200] 100 perovskite battery, 10 first electrode layer, 11 glass substrate, 12 conductive layer, 20 first carrier transport layer, 30 perovskite layer, 30' first perovskite layer, 31 recess structure, 40 second carrier transport layer, 50 first functional layer, 60 second electrode layer, 61 second functional layer, 62 first metal layer, 70 first mold, 71 protrusion, 72 base, 73 molding portion, 731 cavity.

Claims

1. A perovskite battery, a first electrode layer disposed as an electrode layer for receiving light in the perovskite cell; a first carrier transport layer provided on the first electrode layer and being one of a hole transport layer and an electron transport layer; a perovskite layer provided on a side of the first carrier transport layer away from the first electrode layer; a second electrode layer located on a side of the perovskite layer away from the first electrode layer; and a first functional layer located on a side of the perovskite layer facing away from the first electrode layer and on one side in a thickness direction of the second electrode layer, the first functional layer being capable of reflecting, to the perovskite layer, at least a portion of light that has entered from the first electrode layer and transmitted through the perovskite layer.

2. The material of the first functional layer is TiO ２ , ZnO, SnO ２ , Al ２ O ３ , MoO ３ , W.O. ３ , NiO ｘ , ITO, FTO, AgBiS ２ , W.S. ２ , MoS ２ , LiF, MgF ２ , NaF, KF, Au, Ag, Cu, Al, and Cr.

3. The perovskite battery according to claim 1 or 2, wherein the first functional layer has a thickness of 0.5 nm to 20 nm.

4. the perovskite battery includes a second carrier transport layer disposed between the perovskite layer and the second electrode layer, the second carrier transport layer being the other of the hole transport layer and the electron transport layer; wherein the first functional layer is provided between the perovskite layer and the second carrier transport layer; or the first functional layer is provided between the second carrier transport layer and the second electrode layer; or the first functional layer is provided on a side of the second electrode layer that is away from the second carrier transport layer; or the first functional layer is simultaneously provided between the perovskite layer and the second carrier transport layer and between the second carrier transport layer and the second electrode layer; or The first functional layer is simultaneously provided between the perovskite layer and the second carrier transport layer and on a side of the second electrode layer away from the second carrier transport layer; or The first functional layer is simultaneously provided between the second carrier transport layer and the second electrode layer and on a side of the second electrode layer that is away from the second carrier transport layer; or 4. The perovskite battery according to claim 1, wherein the first functional layer is simultaneously provided between the perovskite layer and the second carrier transport layer, between the second carrier transport layer and the second electrode layer, and on a side of the second electrode layer away from the second carrier transport layer.

5. the first functional layer is provided between the second carrier transport layer and the second electrode layer, 5. The perovskite battery according to claim 4, wherein the second electrode layer includes a second functional layer and a first metal layer stacked on a side of the first functional layer facing away from the second carrier transport layer, and the second functional layer is configured to be able to block migration of iodine ions in the perovskite layer to the first metal layer.

6. The material of the second functional layer is ITO, FTO, LiF, MgF ２ , and MoO ３ 6. The perovskite battery of claim 5, comprising at least one material selected from the group consisting of:

7. The perovskite battery according to claim 5 or 6, wherein the second functional layer has a thickness of 5 nm to 30 nm.

8. The perovskite battery according to any one of claims 1 to 7, wherein the surface of the perovskite layer facing away from the first carrier transport layer is roughened.

9. The perovskite battery according to claim 8 , wherein a plurality of recess structures are provided on a surface of the perovskite layer facing away from the first carrier transport layer.

10. The perovskite battery according to claim 9 , wherein the shape of the inner contour of the recessed structure is an inverted pyramid.

11. The perovskite battery according to claim 9 or 10, wherein the depth h1 of the recess structure satisfies 0 < h1 ≦ 100 nm.

12. The perovskite battery according to any one of claims 9 to 11, wherein the plurality of recessed structures are arranged in an array.

13. 13. An electrical power consuming device comprising a perovskite cell according to any one of claims 1 to 12, wherein the perovskite cell is used to provide electrical energy.

14. A method for manufacturing a perovskite battery, comprising: forming a first carrier transport layer on the first electrode layer; forming a perovskite layer on the first carrier transport layer on a side away from the first electrode layer; forming a first functional layer on a side of the perovskite layer away from the first electrode layer; wherein the first carrier transport layer is one of a hole transport layer and an electron transport layer, the first electrode layer is provided as an electrode layer into which light is incident in the perovskite battery, and the first functional layer is capable of reflecting, to the perovskite layer, at least a portion of the light that has entered from the first electrode layer and transmitted through the perovskite layer.

15. Specifically, the step of forming a perovskite layer on the side of the first carrier transport layer away from the first electrode layer includes: spin-coating a perovskite precursor solution onto the first carrier transport layer to form a perovskite intermediate layer; and covering a cavity of a first mould onto the perovskite interlayer layer, and annealing and cooling the perovskite interlayer layer to form the perovskite layer with a roughened surface.

16. The rotation speed of the spin coating is 4000 rpm, and the time length of the spin coating is 20 s; or The duration of the annealing is 45 minutes and the temperature of the annealing is 120°C; or 16. The method for producing a perovskite battery according to claim 15, wherein the rotation speed of the spin coating is 4000 rpm, the time length of the spin coating is 20 s, the time length of the annealing is 45 min, and the annealing temperature is 120°C.

17. a plurality of protrusions are provided in the cavity of the first mold; The step of covering the cavity of the first mold on the perovskite interlayer layer and annealing and cooling the perovskite interlayer layer to form the perovskite layer with a rough surface specifically includes: placing a cavity of a first mold over the perovskite interlayer layer, wherein the protrusions are embedded in the perovskite interlayer layer; annealing and cooling the perovskite interlayer layer; 17. The method for producing a perovskite battery according to claim 15 or 16, further comprising the step of: removing the first mold from the perovskite interlayer layer to form a perovskite layer having a plurality of recessed structures, the recessed structures corresponding one-to-one to the plurality of protrusions.

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