OLED panel with separate protrusions

Abstract

The embodiments described herein generally relate to a device. The device includes a substrate and a plurality of subpixels. Each subpixel includes an adjacent protrusion located on the substrate. Each protrusion includes two or more protrusion structures, an organic light-emitting diode (OLED) material, and a cathode. The protrusion structure includes a first protrusion defined by an outer extension of the first protrusion structure of a second structure that extends laterally past the first structure. The first structure is located on the substrate. The second structure is located on the first structure. The second structure of the first protrusion structure is separated from the second structure of the second protrusion structure by a gap between the structures. The OLED material is located on the anode. The cathode is located on the OLED material.

Description

Technical Field

[0001] The embodiments described herein generally relate to displays. More particularly, the embodiments described herein relate to sub-pixel circuits that may be utilized within a display, such as an organic light emitting diode (OLED) display, and methods of forming the sub-pixel circuits.

Background Art

[0002] Input devices including display devices may be used within various electronic systems. An organic light emitting diode (OLED) is a light emitting diode (LED) in which a light emitting electroluminescent layer is a film of an organic compound and the film emits light in response to an electric current. When the emitted light passes through a transparent or semi-transparent bottom electrode and a substrate on which a panel is manufactured, the OLED device is classified as a bottom emission type device. A top emission type device is classified based on whether the light emitted from the OLED device passes through a lid added after the manufacture of the device. OLEDs are currently used to fabricate display devices for many electronic devices. Today's electronic device manufacturers are pushing to reduce the size of these display devices while at the same time providing higher resolutions than just a few years ago.

[0003] [[ID=,16]]The patterning of OLED pixels is currently based on a process that limits panel size, pixel resolution, and substrate size. Instead of using a fine metal mask to pattern pixels, photolithography should be used. Currently, in the patterning of OLED pixels, it is necessary to remove the organic material after the patterning process. When removed, the organic material causes particle problems that degrade OLED performance. Therefore, in the art, there is a need for sub-pixel circuits and methods of forming sub-pixel circuits that increase the number of pixels per inch and provide improved OLED performance.

Summary of the Invention

[0004] This specification shows and describes a device. The device includes a substrate and a plurality of subpixels. Each subpixel includes an adjacent protrusion located on the substrate. Each protrusion includes two or more protrusion structures, an organic light-emitting diode (OLED) material, and a cathode. The protrusion structure includes a first protrusion defined by an outer extension of the first protrusion structure of a second structure that extends laterally past the first structure. The first structure is located on the substrate. The second structure is located on the first structure. The second structure of the first protrusion structure is separated from the second structure of the second protrusion structure by a gap between the structures. The OLED material is located on the anode. The cathode is located on the OLED material.

[0005] This specification describes and illustrates a method for forming a device. The method includes depositing a first structural layer and a second structural layer on a substrate; depositing and patterning a plurality of first resists on the second structural layer; and removing the second structural layer and portions of the first structural layer to form a protrusion, wherein the protrusion has two or more protrusion structures separated by structural gaps, and the two or more protrusion structures comprise a second structure formed from the second structural layer, which is positioned on a first structure formed from the first structural layer; depositing first subpixel organic light-emitting diode (OLED) material, cathode, and encapsulation layer on the protrusion; depositing and patterning a second resist on the first subpixel; and removing portions of the encapsulation layer, cathode, and OLED material.

[0006] This specification shows and describes a device. The device includes a substrate and a plurality of subpixels. Each subpixel includes an adjacent protrusion located on the substrate. Each protrusion includes two or more protrusion structures, an organic light-emitting diode (OLED) material, and a cathode. The protrusion structure includes a first protrusion and a second protrusion. The first protrusion is defined by an outer extension of the second structure that extends laterally past the top surface and outer side wall of the first structure. The second protrusion is defined by an inner extension of the first protrusion that extends laterally past the top surface and inner side wall of the first structure. The first structure is located on the substrate. The second structure is positioned on top of the first structure. The first protruding structure is separated from the second protruding structure by a gap between the structures. The OLED material is positioned on top of the anode. The cathode is positioned on top of the OLED material.

[0007] A more detailed description of the disclosure outlined above can be obtained by referring to embodiments, some of which are shown in the accompanying drawings, so that the features of the disclosure listed above can be understood in detail. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered limiting to the scope of the disclosure, and other equally valid embodiments may be accepted. [Brief explanation of the drawing]

[0008] [Figure 1A] This is a schematic cross-sectional view of the subpixel circuit at the cutting line 1A-1A according to the embodiment. [Figure 1B] This is a schematic cross-sectional view of the protruding subpixel circuit structure at the cutting line 1B-1B according to the embodiment. [Figure 1C] This is a schematic cross-sectional view of the subpixel circuit at the cutting line 1A-1A according to the embodiment. [Figure 1D] This is a schematic cross-sectional view of the protruding subpixel circuit structure at the cutting line 1B-1B according to the embodiment. [Figure 1E] This is a schematic cross-sectional view of the subpixel circuit at the cutting line 1C-1C according to the embodiment. [Figure 2] This is a flowchart of a method for forming a subpixel circuit according to an embodiment. [Figure 3A-3M] This is a schematic cross-sectional view of a substrate during a method for forming a subpixel circuit according to an embodiment. [Figure 4A-4D] This is a schematic cross-sectional view of the overhang according to the embodiment. [Modes for carrying out the invention]

[0009] For ease of understanding, the same reference numerals are used to indicate identical elements common to the figures where possible. Elements disclosed in one embodiment are intended to be usefully utilized in other embodiments unless otherwise specified.

[0010] The embodiments described herein generally relate to displays. More specifically, the embodiments described herein relate to subpixel circuits that may be used in displays such as organic light-emitting diode (OLED) displays, and methods for forming subpixel circuits. In various embodiments, these subpixels use advanced protruding structures to enhance the functionality of the display.

[0011] Each of the embodiments of a subpixel circuit described herein includes a plurality of subpixels, each of which is defined by an adjacent protruding structure that is permanently present in the subpixel circuit. The figure shows two subpixels, each defined by an adjacent protruding structure, but the subpixel circuits of the embodiments described herein include a plurality of subpixels, such as two or more subpixels. Each subpixel has an OLED material configured to emit white, red, green, blue, or other colored light when energized. For example, the OLED material of the first subpixel emits red light when energized, the OLED material of the second subpixel emits green light when energized, and the OLED material of the third subpixel emits blue light when energized.

[0012] These protrusions are permanently present in the subpixel circuit. A protrusion comprises two or more protrusion structures, for example, comprising at least a first and a second protrusion structure. Each protrusion structure comprises at least a second structure positioned on top of the first structure. Adjacent protrusion structures defining each subpixel in the subpixel circuit of the display define the formation of the subpixel circuit using deposition and define that the protrusion structures remain in place after the subpixel circuit is formed. Deposition is used to deposit the OLED material and cathode (including the hole injection layer (HIL), hole transport layer (HTL), light emission layer (EML), and electron transport layer (ETL)). In some examples, an encapsulation layer may be positioned by deposition. In embodiments including one or more capping layers, the capping layer is positioned between the cathode and the encapsulation layer. The encapsulation layer for each subpixel is positioned on top of the cathode. The deposition angle set by the protrusions and the deposition source defines the deposition angle. In other words, the overhang, along with the deposition angle set by the deposition source, defines the shadowing effect during deposition.

[0013] Figure 1A is a schematic cross-sectional view of the first subpixel circuit 100A. The cross-sectional view of Figure 1A is a view taken along the cutting line 1A-1A in Figure 1E. Figure 1B is a schematic cross-sectional view of the overhanging structure 110 of the first subpixel circuit 100A. The cross-sectional view of Figure 1B is a view taken along the cutting line 1B-1B in Figure 1E. Figure 1E is a schematic upper cross-sectional view of the first subpixel 100A along the cutting line 1E-1E.

[0014] The first subpixel circuit 100A includes a substrate 102. A metal-containing layer 104 (e.g., an anode) may be patterned on the substrate 102, and the metal-containing layer 104 is defined by adjacent pixel structures (PS) 126A disposed on the substrate 102. In one embodiment, the PS 126A is disposed on the substrate 102. In one embodiment, the metal-containing layer 104 is pre-patterned on the substrate 102. For example, the substrate 102 is pre-patterned with an indium tin oxide (ITO) metal-containing layer 104. The metal-containing layer 104 is configured to act as the anode of each subpixel. In one embodiment, the metal-containing layer 104 is a layer stack of a first transparent conductive oxide (TCO) layer, a second metal-containing layer disposed on the first TCO layer, and a third TCO layer disposed on the second metal-containing layer. The metal-containing layer 104 may include, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials.

[0015] Multiple PS126A are arranged on a substrate 102. A PS126A comprises one of the following: an organic material, an organic material with an inorganic coating on which an inorganic coating is placed. The organic material of the PS126A includes, but is not limited to, polyimide. The inorganic material of the PS126A includes, but is not limited to, silicon oxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (Si2N2O), magnesium fluoride (MgF2), or a combination thereof. Adjacent PS126A define their respective subpixels and expose the anode (i.e., the metal-containing layer 104) of their respective first subpixel circuits 100A.

[0016] The first subpixel circuit 100A has a plurality of subpixels 106, including at least a first subpixel 108A and a second subpixel 108B. While these figures show the first subpixel 108A and the second subpixel 108B, the first subpixel circuit 100A in the embodiments described herein may include two or more subpixels 106, such as a third and a fourth subpixel. Each subpixel 106 has an OLED material configured to emit white, red, green, blue, or other colored light when energized. For example, the OLED material of the first subpixel 108A emits red light when energized, the OLED material of the second subpixel 108B emits green light when energized, the OLED material of the third subpixel emits blue light when energized, and the OLED material of the fourth subpixel emits another colored light when energized.

[0017] Each subpixel 106 includes a protrusion 110. The protrusion 110 is permanently present in the first subpixel circuit 100A. The protrusion 110 further defines each subpixel 106 of the first subpixel circuit 100A. Each protrusion 110 includes two or more protrusion structures, such as a first protrusion structure 110A and a second protrusion structure 110B. The protrusion structures (e.g., the first protrusion structure 110A and the second protrusion structure 110B) are separated by a gap 118. The first protrusion structure 110A includes a first structure 120A and a second structure 121A. The second structure 121A is positioned on top of the first structure 120A. The second protrusion structure 110B includes a first structure 120B and a second structure 121B. The second structure 121B is positioned on top of the first structure 120B. The first overhanging structure 110A and the second overhanging structure 110B include a first overhang 109 and a second overhang 117. The first overhang 109 is defined by a first overhanging extension 109A of the second structure 121A that extends laterally past the upper surface 105A of the first structure 120A, and a first overhanging extension 109B of the second structure 121B that extends laterally past the upper surface 105B of the first structure 120B. In some embodiments, the first overhanging extension 109A and the first overhanging extension 109B extend laterally past the outer side walls 111A and 111B of the first structure 120A and the first structure 120B, respectively.

[0018] The second overhang 117 is defined by a second overhang extension 117A of the second structure 121A that extends laterally past the upper surface 105A of the first structure 120A, and a second overhang extension 117B of the second structure 121B that extends laterally past the upper surface 105B of the first structure 120B. In some embodiments, the first overhang extension 117A and the first overhang extension 117B extend laterally past the inner side walls 119A and 119B of the first structure 120A and the first structure 120B, respectively.

[0019] In one embodiment, the second structure 121A and the second structure 121B include a non-conductive inorganic material, while the first structure 120A and the first structure 120B include a conductive inorganic material. The conductive material of the first structure 120A and 120B includes aluminum (Al), aluminum neodymium (AlNd), molybdenum (Mo), molybdenum tungsten (MoW), copper (Cu), titanium (Ti), or a combination thereof. The inorganic material of the second structure 121A and the second structure 121B includes silicon nitride (Si3N4), silicon oxide (SiO2), silicon oxynitride (Si2N2O), or a combination thereof. The first protruding structure 110A and the second protruding structure 110B can remain in place; that is, the first protruding structure 110A and the second protruding structure 110B are permanently present. Therefore, no organic material that degrades OLED performance will remain after peeling off from the extension 110. Eliminating the need for a peeling procedure increases throughput.

[0020] In one embodiment, the first structure 120A and the first structure 120B include a metal-containing material. In one example, the metal-containing material is a transparent conductive oxide (TCO) material. The TCO material includes, but is not limited to, indium zinc oxide (IZO), indium tin oxide (ITO), indium gallium zinc oxide (IGZO), or a combination thereof. In another embodiment, the first structure 120A, the first structure 120B, the second structure 121A, and the second structure 121B include a conductive material.

[0021] The first overhang 109 of the first overhang structure 110A and the first overhang 109 of the second overhang structure 110B are each defined by a first overhang extension 109A and a first overhang extension 109B. The second overhang 117 of the first overhang structure 110A and the second overhang 117 of the second overhang structure 110B are each defined by a second overhang extension 117A and a second overhang extension 117B. To form the first overhang extensions 109A, 109B, second overhang extensions 117A, and 117B, at least the bottom surfaces 107A of the second structures 121A and the bottom surfaces 107B of the second structures 121B are each wider than the upper surfaces 105 of the first structures 120A and 120B.

[0022] The first overhang extensions 109A and 109B form the first overhang 109, the second overhang extensions 117A and 117B form the second overhang 117, and enable the second structures 121A and 121B to shadow the first structures 120A and 120B, respectively. The shadowing of the first overhang 109 and the second overhang 117 defines the deposition of the OLED material 112 and the cathode 114. The OLED material 112 may include one or more of HIL, HTL, EML, and ETL. The OLED material is disposed in contact with the metal-containing layer 104 on the metal-containing layer 104. The OLED material 112 is disposed under the adjacent first overhang 109 and the adjacent second overhang 117. In some embodiments, the OLED material 112 is disposed on the outer sidewalls 111A of the first structure 120A, the outer sidewalls 111B of the first structure 120B, the inner sidewalls 119A of the first structure 120A, and the inner sidewalls 119B of the first structure 120B. In some embodiments, the OLED material 1121 is disposed on the outer sidewalls 113A of the second structure 121A, the outer sidewalls 113B of the second structure 121B, the inner sidewalls 123A of the second structure 121A, and the inner sidewalls 123B of the second structure 121B.

[0023] The cathode 114 includes a conductive material such as a metal. For example, the cathode 114 includes, without limitation, silver, magnesium, chromium, titanium, aluminum, ITO, or a combination thereof. The cathode 114 is disposed on the OLED material 112. In some embodiments, the cathode 114 is disposed on the outer sidewall 111A of the first structure 120A, the outer sidewall 111B of the first structure 120B, the inner sidewall 119A of the first structure 120A, and the inner sidewall 119B of the first structure 120B. In some embodiments, the cathode 114 is disposed on the outer sidewall 113A of the second structure 121A, the outer sidewall 113B of the second structure 121B, the inner sidewall 123A of the second structure 121A, and the inner sidewall 123B of the second structure 121B.

[0024] Each subpixel 106 includes an encapsulation layer 116. The encapsulation layer 116 may be a local passivation layer or may correspond to a local passivation layer. The encapsulation layer 116 of each subpixel is disposed on the cathode 114 (and the OLED material 112), and the encapsulation layer 116 extends under at least a portion of each of the first overhang 109 and the second overhang 117. The encapsulation layer 116 may be disposed along the sidewalls 111A, 111B, 113A, 113B, 119A, 119B, 123A, 123B. In some embodiments, the encapsulation layer 116 is disposed on the upper surface 115A of the second structure 121A and the upper surface 115B of the second structure 121B. The encapsulation layer 116 includes a non-conductive inorganic material such as a silicon-containing material. This silicon-containing material may include a material containing Si3N4.

[0025] When the OLED material 112, the cathode 114, and the encapsulation layer 116 are disposed on the sidewalls 111A, 111B, 113A, 113B, 119A, 119B, 123A, 123B, the overhang structures 110A, 110B of the overhang 110 are encapsulated. This encapsulation prevents the formation of moisture intrusion paths during manufacturing. Fewer intrusion paths reduce the likelihood of moisture intrusion and thus prevent degradation of the subpixel circuit 100.

[0026] In embodiments including one or more capping layers, the capping layers are positioned between the cathode 114 and the encapsulation layer 116. For example, a first capping layer and a second capping layer are positioned between the cathode 114 and the encapsulation layer 116. Each of the embodiments described herein may include one or more capping layers positioned between the cathode 114 and the encapsulation layer 116. The first capping layer may contain an organic material. The second capping layer may contain an inorganic material such as lithium fluoride. The first and second capping layers may be deposited by vapor deposition.

[0027] In another embodiment, the first subpixel circuit 100A further includes at least one broad-area passivation layer 120 disposed on the overhang structure 110 and the encapsulation layer 116. In yet another embodiment, the subpixel includes an intermediate passivation layer disposed on each of the overhang structures 110 of the subpixel 106 and between the encapsulation layer 116 and the broad-area passivation layer 120.

[0028] Figure 1C is a schematic cross-sectional view of a second subpixel circuit 100B according to an embodiment. Figure 1D is a schematic cross-sectional view of a second subpixel circuit 100B according to an embodiment. The second subpixel circuit 100B includes a substrate 102. A base layer 125 may be patterned on the substrate 102. The base layer 125 includes, but is not limited to, a CMOS layer. A metal-containing layer 104 (e.g., an anode) may be patterned on the base layer 125, and the metal-containing layer 104 is defined by adjacent pixel structures (PS) 126B disposed on the substrate 102. In one embodiment, the metal-containing layer 104 is pre-patterned on the base layer 125. For example, the base layer 125 is pre-patterned with an indium tin oxide (ITO) metal-containing layer 104. The metal-containing layer 104 may be disposed on the substrate 102. The metal-containing layer 104 is configured to act as the anode of each subpixel. In one embodiment, the metal-containing layer 104 is a layer stack comprising a first transparent conductive oxide (TCO) layer, a second metal-containing layer disposed on the first TCO layer, and a third TCO layer disposed on the second metal-containing layer. The metal-containing layer 104 includes, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials.

[0029] PS126B is placed on the substrate 102. PS126B may also be placed on the base layer 125. PS126B comprises one of the following: an organic material, an organic material with an inorganic coating placed thereon, or an inorganic material. The organic material of PS126B includes, but is not limited to, polyimide. The inorganic material of PS126B includes, but is not limited to, silicon oxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (Si2N2O), magnesium fluoride (MgF2), or a combination thereof. Adjacent PS126Bs define their respective subpixels and expose the metal-containing layer 104 of their respective second subpixel circuits 100B.

[0030] The second subpixel circuit 100B has a plurality of subpixel lines (e.g., a first subpixel line 106A and a second subpixel line 106B). These subpixel lines are adjacent to each other along the pixel plane. Each subpixel line contains at least two subpixels. For example, the first subpixel line 106A contains a first subpixel 108A and a second subpixel (not shown), and the second subpixel line 106B contains a third subpixel 108C and a fourth subpixel (not shown). Figure 1A shows the first subpixel line 106A and the second subpixel line 106B, but the second subpixel circuit 100B in the embodiments described herein may contain two or more subpixel lines, such as a third subpixel line and a fourth subpixel. Each subpixel line has an OLED material configured to emit white, red, green, blue, or other colored light when energized. For example, the OLED material in the first subpixel line 106A emits red light when energized, the OLED material in the second subpixel line 106B emits green light when energized, the OLED material in the third subpixel line emits blue light when energized, and the OLED material in the fourth subpixel emits light of a different color when energized. The OLED materials within a single pixel line may be configured to emit light of the same color when energized. For example, the OLED materials in the first subpixel 108A and the second subpixel of the first subpixel line 106A emit red light when energized, and the OLED materials in the third subpixel 108C and the fourth subpixel of the second subpixel line 106B emit green light when energized.

[0031] Each subpixel line includes an adjacent overhang 110, and adjacent subpixel lines share the adjacent overhang 110. The overhangs 110 are permanently present in the second subpixel circuit 100B. The overhangs 110 further define each subpixel line of the second subpixel circuit 100B. Each overhang 110 includes two or more overhang structures, such as a first overhang structure 110A and a second overhang structure 110B. The overhang structures (e.g., the first overhang structure 110A and the second overhang structure 110B) are separated by a gap 118. The first overhang structure 110A includes a first structure 120A and a second structure 121A. The second structure 121A is located on top of the first structure 120A.

[0032] The second overhang structure 110B includes the first structure 120B and the second structure 121B. The second structure 121B is positioned above the first structure 120B. The first overhang structure 110A and the second overhang structure 110B include the first overhang 109 and the second overhang 117. The first overhang 109 is defined by the first overhang extension portion 109A of the second structure 121A (shown in Figure 1B) which extends laterally past the upper surface 105A of the first structure 120A, and the first overhang extension portion 109B of the second structure 121B (shown in Figure 1B) which extends laterally past the upper surface 105B of the first structure 120B. In some embodiments, the first overhanging extension 109A and the first overhanging extension 109B extend laterally past the outer side walls 111A and 111B of the first structure 120A and the first structure 120B, respectively. The first endpoint 130A of the bottom surface 131A of the first structure 120A may extend to the first edge 132A of the PS126B, or it may extend past the first edge 132A of the PS126B. The first endpoint 130B of the bottom surface 131B of the first structure 120B may extend to the second edge 132B of the PS126B, or it may extend past the second edge 132B of the PS126B.

[0033] The second structures 121A and 121B may also be placed on top of the intermediate structure. The intermediate structure may be placed on the upper surface 105A of the first structure 120A of the first protruding structure 110A, and on the upper surface 105B of the first structure 120B of the first protruding structure 110B. The intermediate structure may be a seed layer or an adhesive layer. The seed layer functions as a current path for the second subpixel circuit 100B. The seed layer may contain titanium (Ti) material. The adhesion promoting layer improves adhesion between the first structures 120A, 120B and the second structures 121A, 121B. The adhesive layer may contain chromium (Cr) material.

[0034] The second overhang 117 is defined by a second overhang extension 117A of the second structure 121A (shown in Figure 1B) that extends laterally past the upper surface 105A of the first structure 120A, and a second overhang extension 117B of the second structure 121B (shown in Figure 1B) that extends laterally past the upper surface 105B of the first structure 120B. In some embodiments, the first overhang extension 109A and the second overhang extension 117B extend laterally past the inner side walls 119A and 119B of the first structure 120A and the first structure 120B, respectively.

[0035] In one embodiment, the second structure 121A and the second structure 121B include a conductive inorganic material, and the first structure 120A and the first structure 120B include a non-conductive inorganic material. The conductive material of the second structure 121A and the second structure 121B includes copper (Cu), chromium (Cr), aluminum (Al), aluminum neodymium (AlNd), molybdenum (Mo), molybdenum tungsten (MoW), titanium (Ti), or a combination thereof. The non-conductive material of the first structure 120A and the first structure 120B includes amorphous silicon (a-Si), silicon nitride (Si3N4), silicon oxide (SiO2), silicon oxynitride (Si2N2O), or a combination thereof. The overhang 110 can remain in place; that is, the overhang structure 110 is permanent.

[0036] The first overhang 109 of the first overhang structure 110A and the first overhang 109 of the second overhang structure 110B are defined by the first overhang extension portion 109A and the first overhang extension portion 109B, respectively. The second overhang 117 of the first overhang structure 110A and the second overhang 117 of the second overhang structure 110B are defined by the second overhang extension portion 117A and the second overhang extension portion 117B, respectively. In order to form the first overhanging extension portion 109A, the first overhanging extension portion 109B, the second overhanging extension portion 117A, and the second overhanging extension portion 117B, at least the bottom surface 107A of the second structure 121A and the bottom surface 107B of the second structure 121B are wider than the top surface 105 of the first structure 120A and the first structure 120B, respectively.

[0037] The first overhang extension 109A, the first overhang extension 109B, the second overhang extension 117A, and the second overhang extension 117B each form the first overhang 109 and the second overhang 117, respectively, allowing the second structure 121A and the second structure 121B to shadow the first structure 120A and 120B, respectively. The shadowing of the first overhang 109 and the second overhang 117 defines the deposition of the OLED material 112 and the cathode 114. The OLED material 112 may include one or more of HIL, HTL, EML, and ETL. The OLED material is placed on and in contact with the metal-containing layer 104. The OLED material 112 is placed beneath the adjacent first overhang 109 and the adjacent second overhang 117. In some embodiments, the OLED material 112 is positioned on the outer sidewall 111A of the first structure 120A, the outer sidewall 111B of the first structure 120B, the inner sidewall 119A of the first structure 120A, and the inner sidewall 119B of the first structure 120B. In some embodiments, the OLED material 1121 is positioned on the outer sidewall 113A of the second structure 121A, the outer sidewall 113B of the second structure 121B, the inner sidewall 123A of the second structure 121A, and the inner sidewall 123B of the second structure 121B. In yet another embodiment, the OLED material 112 ends on the outer sidewall 111A of the first structure 120A, the outer sidewall 111B of the first structure 120B, the inner sidewall 119A of the first structure 120A, and the inner sidewall 119B of the first structure 120B. In other words, the OLED material 112 is not placed on the outer side wall 113A of the second structure 121A, the outer side wall 113B of the second structure 121B, the inner side wall 123A of the second structure 121A, or the inner side wall 123B of the second structure 121B.

[0038] The cathode 114 includes a conductive material such as a metal. For example, the cathode 114 includes, but is not limited to, silver, magnesium, chromium, titanium, aluminum, ITO, or a combination thereof. The cathode 114 is positioned on top of the OLED material 112. In some embodiments, the cathode 114 is positioned on the outer sidewall 111A of the first structure 120A, the outer sidewall 111B of the first structure 120B, the inner sidewall 119A of the first structure 120A, and the inner sidewall 119B of the first structure 120B. In some embodiments, the cathode 114 is positioned on the outer sidewall 113A of the second structure 121A, the outer sidewall 113B of the second structure 121B, the inner sidewall 123A of the second structure 121A, and the inner sidewall 123B of the second structure 121B. In yet another embodiment, the cathode 114 ends on the outer side wall 111A of the first structure 120A, the outer side wall 111B of the first structure 120B, the inner side wall 119A of the first structure 120A, and the inner side wall 119B of the first structure 120B. That is, the cathode 114 is not located on the outer side wall 113A of the second structure 121A, the outer side wall 113B of the second structure 121B, the inner side wall 123A of the second structure 121A, and the inner side wall 123B of the second structure 121B.

[0039] Each subpixel 106 includes an encapsulation layer 116. The encapsulation layer 116 may be a local passivation layer or equivalent. The encapsulation layer 116 of each subpixel is located on the cathode 114 (and OLED material 112), and the encapsulation layer 116 extends beneath at least a portion of each of the first overhang 109 and the second overhang 117, and also extends along the sidewalls 111A, 111B, 113A, 113B, 119A, 119B, 123A, and 123B. The encapsulation layer 116 is located on the cathode 114 and extends in the pixel plane to contact the cathode 114 on at least the sidewalls 111A, 111B, 119A, and 119B of the first structure 120A and 120B. In some embodiments, the encapsulation layer 116 extends to contact the side walls 111A, 111B, 119A, and 119B of the first structures 120A and 120B. In some embodiments, the encapsulation layer 116 extends to contact the second structure 110B at the lower surfaces of the first overhanging extensions 109A, 109B and the second overhanging extensions 117A and 117B of the second structures 121A and 121B, as well as at the side walls 113A, 113B, 123A, and 123B. In some embodiments, the encapsulation layer 116 terminates at the side walls 111A, 111B, 119A, and 119B of the first structures 120A and 120B. In other words, the encapsulation layer 116 is not placed on the side walls 113A, 113B, 123A, and 123B or the top surfaces 105A and 105B of the second structures 121A and 121B. The encapsulation layer 116 contains a non-conductive inorganic material such as a silicon-containing material. This silicon-containing material may contain a material containing Si3N4.

[0040] When the OLED material 112, cathode 114, and encapsulation layer 116 are placed on the side walls 111A, 111B, 113A, 113B, 119A, 119B, 123A, and 123B, the protruding structures 110A and 110B of the protrusion 110 are encapsulated. This encapsulation prevents the formation of moisture intrusion pathways during manufacturing. Fewer intrusion pathways reduce the possibility of moisture intrusion and thus prevent degradation of the subpixel circuit 100.

[0041] Each subpixel line may contain adjacent isolation structures, and within the line plane, adjacent subpixels share adjacent isolation structures. The isolation structures are permanently present in the second subpixel circuit 100B. The isolation structures further define each subpixel in the subpixel lines of the second subpixel circuit 100B. The isolation structures are positioned on the upper surface 103 of PS126B.

[0042] The OLED material 112 is positioned in the line plane on top of the metal-containing layer 104 and the isolation structure, in contact with the metal-containing layer 104 and the isolation structure. The cathode 114 is positioned on top of the OLED material 112 in the line plane. The encapsulation layer 116 is positioned on top of the cathode 114 in the line plane. As shown in Figure 1D, the OLED material 112, cathode 114, and encapsulation layer 116 maintain continuity along the length of the line plane to allow current to flow across each subpixel 106.

[0043] In embodiments including one or more capping layers, the capping layers are positioned between the cathode 114 and the encapsulation layer 116. For example, a first capping layer and a second capping layer are positioned between the cathode 114 and the encapsulation layer 116. Each of the embodiments described herein may include one or more capping layers positioned between the cathode 114 and the encapsulation layer 116. The first capping layer may contain an organic material. The second capping layer may contain an inorganic material such as lithium fluoride. The first and second capping layers may be deposited by vapor deposition.

[0044] In another embodiment, the first subpixel circuit 100A further includes at least one broad-area passivation layer 120 disposed on the overhang structure 110 and the encapsulation layer 116. In yet another embodiment, the subpixel includes an intermediate passivation layer disposed on each of the overhang structures 110 of the subpixel 106 and between the encapsulation layer 116 and the broad-area passivation layer 120.

[0045] Figure 2 is a flowchart of method 200 for forming a subpixel circuit. Figures 3A to 3M are schematic cross-sectional views of the substrate 102 during method 200 for forming a subpixel circuit. This subpixel circuit may be a first subpixel circuit 100A or a second subpixel circuit 100B.

[0046] In operation 201, the first structural layer 320 and the second structural layer 321 are deposited on the substrate 102, as shown in Figure 3A. The first structural layer 320 is placed on top of the PDL structure 126. The first structural layer 320 corresponds to the first structure 120A of the first overhang structure 110A and the first structure 120B of the second overhang structure 110B of the overhang 110. The second structural layer 321 is placed on top of the first structural layer 320. The second structural layer 321 corresponds to the second structure 121A of the first overhang structure 110A and the second structure 121B of the second overhang structure 110B of the overhang 110.

[0047] In operation 202, multiple resists 306 are placed and patterned as shown in Figure 3B. The multiple resists 306 are placed on a second structural layer 321. The multiple resists 306 are either positive-type resists or negative-type resists. Positive-type resists include portions of the resist that, when exposed to electromagnetic radiation, are soluble to the resist developer applied to the resist after the pattern has been written to the resist using that electromagnetic radiation. Negative-type resists include portions of the resist that, when exposed to electromagnetic radiation, are insoluble to the resist developer applied to the resist after the pattern has been written to the resist using that electromagnetic radiation. The chemical composition of the resist 306 determines whether it is a positive-type resist or a negative-type resist. The portion of the second structural layer 321 on which the resists 306 are placed is patterned to form the pixel openings 124 and structural gaps 118 of the first subpixel 108A. This patterning is one of the following processes: photolithography, digital lithography, or laser ablation.

[0048] In operation 203, the portions of the second structural layer 321 and the first structural layer 320 exposed by the pixel openings 124 are removed, as shown in Figure 3C. The second structural layer 321 may be removed by a dry etching process. The first structural layer 320 may be removed by a wet etching process. Operation 203 forms a protrusion 110 having two or more protrusion structures, for example, a protrusion 110 having a first protrusion structure 110A and a second protrusion structure 110B. The first protrusion structure 110A includes a second structure 121A formed from the second structural layer 321. The second protrusion structure 110B includes a second structure 121B formed from the second structural layer 321. The first protrusion structure 110A includes a first structure 120A formed from the first structural layer 320. The second cantilever structure 110B includes the first structure 120B formed from the first structural layer 320. The first cantilever structure 110A and the second cantilever structure 110B are separated by a structural gap 118. Each cantilever structure includes a first cantilever 109 and a second cantilever 117. The first cantilever 109 of the first cantilever structure 110A is defined by the first cantilever extension 109A of the second structure 121A, which extends laterally past the upper surface 105A and outer side wall 111A of the first structure 120A. The first cantilever 109 of the second cantilever structure 110B is defined by the second cantilever extension 109B of the second structure 121B, which extends laterally past the upper surface 105B and outer side wall 111B of the first structure 120B. The second overhang 117 of the first overhang structure 110A is defined by the inner extension portion 117A of the second structure 121A that extends past the upper surface 105A and inner side wall 119A of the first structure 120A. The second overhang 117 of the second overhang structure 110B is defined by the inner extension portion 117B of the second structure 121B that extends past the upper surface 105B and inner side wall 119B of the first structure 120B. Multiple resists 306 are removed.

[0049] In operation 204, the OLED material 112 and cathode 114 of the first subpixel 108A are deposited as shown in Figure 3D. The shadowing of the first overhang 109 and the second overhang 117 defines the deposition of the OLED material 112 and cathode 114, respectively.

[0050] In operation 205, the encapsulation layer 116 and resist 308 of the first subpixel 108A are deposited and patterned, as shown in Figure 3E. The resist 308 is either a positive or negative resist. The chemical composition of the resist 308 determines whether it is a positive or negative resist. The resist 308 is patterned to protect the first subpixel 108A from subsequent etching processes. The resist 308 is deposited in the interstructure gaps 118.

[0051] In operation 206, the portion of the encapsulation layer 116 exposed by the resist 308 is removed, as shown in Figure 3F. The encapsulation layer 116 may also be removed by a dry etching process. In operation 207, the portion of the OLED material 112 and cathode 114 exposed by the resist 308 is removed, as shown in Figure 3G. The OLED material 112 and cathode 114 may also be removed by a wet etching process. The portion of the resist 308 located within the structural gaps 118 prevents the OLED material 112, cathode 114, and encapsulation layer 116 located on the inner sidewall 123A of the second structure 121A and the inner sidewall 119A of the first structure 120A from being etched. Similarly, in the adjacent protrusion 110 defining the first subpixel 108A, the portion of the resist 308 positioned within the structural gap 118 prevents etching of the OLED material 112, cathode 114, and encapsulation layer 116 positioned on the inner sidewall 123B of the second structure 121B of the second protrusion structure 110B and the inner sidewall 119B of the first structure 120B.

[0052] In operation 208, the resist 308 is removed as shown in Figure 3H. After removing the resist, the first subpixel 108A remains.

[0053] In operation 209, the OLED material 112 and cathode 114 of the second subpixel 108B are deposited, as shown in Figure 3I. The shadowing of the first overhang 109 and the second overhang 117 defines the deposition of the OLED material 112 and cathode 114, respectively.

[0054] In operation 210, an encapsulation layer 116 for the second subpixel 108B is deposited, as shown in Figure 3J. In operation 211, a resist 312 is deposited and patterned, as shown in Figure 3K. The resist 312 is either a positive or negative resist. The chemical composition of the resist 312 determines whether it is a positive or negative resist. The resist 312 is patterned to protect the second subpixel 108B from subsequent etching processes. The resist 312 is deposited on top of the interstructure gaps 118.

[0055] In operation 212, the portion of the encapsulation layer 116 exposed by the resist 312 is removed, as shown in Figure 3L. The portion of the encapsulation layer 116 exposed by the resist 312 is the portion where the resist was not deposited and patterned. The encapsulation layer 116 may also be removed by a dry etching process.

[0056] In operation 213, the portions of the OLED material 112 and cathode 114 exposed by the resist 312 are removed, as shown in Figure 3M. The resist 312 is removed. The OLED material 112 and cathode 114 may be removed by a dry etching or wet etching process. The portion of the resist 312 positioned over the structural gap 118 prevents the encapsulation layer 116 positioned over the inner sidewall 123B of the second structure 121B of the second protrusion structure 110B and the inner sidewall 119B of the first structure 120B from being etched. Similarly, in the adjacent protrusion 110 defining the second subpixel 108B, the portion of the resist 312 positioned within the structural gap 118 prevents the encapsulation layer 116 positioned over the inner sidewall 123A of the second structure 121A of the first protrusion structure 110A and the inner sidewall 119A of the first structure 120A from being etched. When the resist is removed, the second subpixel 108B remains.

[0057] Figures 4A to 4D are schematic cross-sectional views of the overhang 110. Figure 4A is a schematic cross-sectional view of the first overhang 109 and the overhang 110 with angled etching. Both the first structures 120A, 120B and the second structures 121A, 121B may be etched using a dry etching process or a wet etching process to minimize lateral etching. Using dry etching for both the first structures 120A, 120B and the second structures 121A, 121B increases process flexibility and simultaneously prevents the formation of moisture intrusion pathways.

[0058] Figure 4B is a schematic cross-sectional view of the first overhang 109 and the overhang 110 having parallel etching. Both the first structures 120A, 120B and the second structures 121A, 121B may be etched using a dry etching process or a wet etching process to minimize lateral etching. Using dry etching for both the first structures 120A, 120B and the second structures 121A, 121B increases process flexibility and simultaneously prevents the formation of moisture intrusion pathways.

[0059] Figure 4C is a schematic cross-sectional view of the overhang 110 having a third overhang structure 110C. The third overhang structure includes the first structure 120C and the second structure 121C. The additional overhang structure further prevents the formation of moisture intrusion pathways due to its more complex structure. To improve the functionality of the subpixel circuit 100, the third overhang structure 110C may be shared by other subpixels 106.

[0060] Figure 4D is a schematic cross-sectional view of the first overhang 109 and the second overhang 117, as well as the overhang 110 having partial etching of the first structure 120A.

[0061] The etching selectivity between the material of the second structural layer 321 corresponding to the second structures 121A and 121B and the material of the first structural layer 320 corresponding to the first structures 120A and 120B determines the variation in the shape of the protrusion 110.

[0062] While the above description applies to embodiments of the present disclosure, other embodiments and additional embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims.

Claims

1. circuit board and It comprises multiple subpixels, and each subpixel is These are adjacent protrusions placed on the substrate, and each protrusion is It comprises two or more overhanging structures, and the overhanging structures are A first overhang is defined by the outer extension of the first overhang structure of the second structure, which extends laterally past the first structure, the first structure is placed on the substrate, the second structure is placed on the first structure, and the second structure of the first overhang structure is separated from the second structure of the second overhang structure by a gap between structures, with respect to an adjacent overhang. An organic light-emitting diode (OLED) material placed on the anode, A cathode placed on the OLED material and A device equipped with the following features.

2. The device according to claim 1, wherein the OLED material and the cathode are arranged on the upper surface of the second structure.

3. The device according to claim 1, wherein the first overhang is further defined by an outer extension of the first overhang structure that extends laterally past the outer side wall of the first structure.

4. The device according to claim 3, further comprising a second overhang defined by an inner extension of the first overhang structure that extends laterally past the inner side wall of the first structure.

5. The device according to claim 4, wherein a encapsulation layer is positioned on at least a portion of the first protrusion, and the encapsulation layer extends below at least a portion of the first protrusion.

6. The device according to claim 5, wherein the encapsulation layer is disposed on the inner side wall and the outer side wall of the first structure.

7. The device according to claim 6, wherein the encapsulation layer is disposed on the outer and inner side walls of the second structure.

8. The device according to claim 1, wherein the first structure of the first protrusion is separated from the first structure of the second protrusion by the gap between the structures.

9. The device according to claim 1, wherein the second structure includes an inorganic material.

10. The device according to claim 1, wherein the first structure S includes a conductive inorganic material.

11. The device according to claim 10, wherein the conductive inorganic material includes copper, titanium, aluminum, molybdenum, silver, indium tin oxide, indium zinc oxide, or a combination thereof.

12. The device according to claim 1, further comprising a third protruding structure separated from the first protruding structure and the second protruding structure.

13. A method for manufacturing a device, Depositing a first structural layer and a second structural layer on a substrate, The process involves depositing and patterning multiple first resists on the second structural layer, The method involves removing the second structural layer and a portion of the first structural layer to form a protrusion, wherein the protrusion has two or more protrusion structures separated by a structural gap, and the two or more protrusion structures comprise a second structure formed from the second structural layer, which is placed on a first structure formed from the first structural layer. On the aforementioned protrusion, the first subpixel organic light-emitting diode (OLED) material, cathode, and encapsulation layer are deposited. Depositing a second resist on the first subpixel and patterning it, Removing the aforementioned encapsulation layer, the cathode, and a portion of the OLED material Methods that include...

14. On the aforementioned protrusion, a second subpixel organic light-emitting diode (OLED) material, cathode, and encapsulation layer are deposited. A third resist is deposited on the second subpixel and patterned, Removing the aforementioned encapsulation layer, cathode, and a portion of the OLED material The method according to claim 13, further comprising:

15. The aforementioned overhanging structure, A first projection extending laterally past the first structure, defined by the outer extension portion of the first projection structure of the second structure, A second overhang extending laterally beyond the first structure, defined by the inner extension portion of the first overhang structure, The method according to claim 13, comprising:

16. The method according to claim 15, wherein the first overhang is defined by an outer extension of the first overhang structure that extends laterally past the outer side wall of the first structure, and the second overhang is defined by an inner extension of the first overhang structure that extends laterally past the inner side wall of the first structure.

17. circuit board and It comprises multiple subpixels, and each subpixel is These are adjacent protrusions placed on the substrate, and each protrusion is It comprises two or more overhanging structures, and the overhanging structures are A first overhang defined by the outer extension of the first overhang structure of the second structure, which extends laterally past the top surface and outer side wall of the first structure, The structure comprises a second overhang defined by an inner extension of the first overhang structure that extends laterally past the upper surface and inner side wall of the first structure, wherein the first structure is placed on the substrate, the second structure is placed on the first structure, and the first overhang structure is separated from the second overhang structure by a gap between structures, and is adjacent to the structure. An organic light-emitting diode (OLED) material placed on the anode, A cathode placed on the OLED material and A device equipped with the following features.

18. The device according to claim 17, further comprising a third protruding structure separated from the first protruding structure and the second protruding structure.

19. The device according to claim 17, wherein a encapsulation layer is disposed on at least a portion of the first and second protrusions, and the encapsulation layer extends below at least a portion of the first and second protrusions.

20. The device according to claim 19, wherein the encapsulation layer is disposed on the inner side wall of the first structure, the outer side wall of the first structure, the outer side wall of the second structure, and the inner side wall of the second structure.

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