Phosphorus-containing passivators, perovskite solar cells, photovoltaic modules, photovoltaic systems, and power consumption devices.

Abstract

Phosphorus-containing passivator, perovskite solar cell, photovoltaic module, photovoltaic system, and power consumption device, wherein the phosphorus-containing passivator comprises an ionic compound containing a cationic group, the cationic group having the structure shown in formula (I), ALB(I), where A represents an organophosphorus group having a lone pair of electrons, B represents a positively charged organophosphorus base, and L represents a linking group between the organophosphorus group and the organophosphorus base. The lone pair of electrons of the organophosphorus group forms a relatively strong P-Pb coordination bond with lead ions unsaturated to the bulk phase and / or upper and lower interfaces of the perovskite absorption layer, thereby passivating low-coordination lead ion defects. The organophosphorus base forms a low-dimensional perovskite at the upper and lower interfaces of the perovskite layer, passivating the perovskite layer interface and suppressing ion movement. The synergistic effect of the organophosphorus group and the organophosphorus base can improve the photoelectric performance and stability of the perovskite solar cell.

Description

Technical Field

[0001] (Cross - reference to related applications) This application refers to Chinese Patent Application No. 202310708422.3, titled "Phosphorus - containing Passivation Agent, Perovskite Solar Cell, Solar Photovoltaic Module, Solar Photovoltaic System and Power - consuming Device", filed on June 14, 2023, the entire content of which is incorporated herein by reference.

[0002] This application relates to the field of solar cell technology, particularly to a phosphorus - containing passivation agent, a perovskite solar cell, a solar photovoltaic module, a solar photovoltaic system and a power - consuming device.

Background Art

[0003] Perovskite solar cells belong to the third generation of solar cells and have many characteristics such as excellent optoelectronic properties, a high light absorption coefficient, a long carrier lifetime and a relatively long diffusion length, and have already become extremely excellent among the third - generation new solar cells.

[0004] However, when perovskite solar cells are fabricated into films, there are a large number of defects on the bulk phase and the surface, including low - coordinated Pb deep - level traps , , , , ,

[0005] , , , Pb clusters, low - coordinated halide ions, anti - site defect PbI3 due to ion migration - , halogen X - vacancies of shallow - level defects and A - site cation vacancies. The existence of a large number of defects affects the optoelectronic performance and stability of perovskite solar cells.

Summary of the Invention

Problems to be Solved by the Invention

[0005] This application is made in view of the above problems, and its purpose includes providing a phosphorus - containing passivation agent, a perovskite solar cell, a solar photovoltaic module, a solar photovoltaic system and a power - consuming device to improve the optoelectronic performance and stability of perovskite solar cells.

Means for Solving the Problem

[0006] This application is realized by the following technical solutions.

[0007] The first aspect of this application provides a phosphorus-containing passivating agent, and the phosphorus-containing passivating agent contains an ionic compound containing a cationic group. The cationic group has a structure shown in the following formula (I), A-L-B (I) Here, A represents an organic phosphorus group having a lone pair of electrons, B represents an organic phosphorus base having a positive charge, and L represents a linking group between the organic phosphorus group and the organic phosphorus base.

[0008] The phosphorus-containing passivating agent of this application contains an organic phosphorus group having a lone pair of electrons and an organic phosphorus base having a positive charge. The lone pair of electrons of the organic phosphorus group can form a relatively strong P-Pb coordination bond with the lead ions coordinated unsaturatedly in the perovskite light-absorbing layer bulk phase and / or the upper and lower interfaces, and can passivate the low-coordination lead ion defects. The organic phosphorus base can form low-dimensional perovskites on the upper and lower interfaces of the perovskite layer, passivate the perovskite layer interface, and suppress ion migration. Therefore, due to the synergistic effect of the organic phosphorus group and the organic phosphorus base, the optoelectronic performance and stability of the perovskite solar cell can be improved.

[0009] In some embodiments, the ionic compound further contains an anionic group, and the anionic group contains one or more of a halogen anion, a pseudohalogen anion, a tetrafluoroborate ion, a hexafluorophosphate ion, and a dimethanesulfonamide ion. The halogen anion and the halogen-containing anionic group can passivate iodine ion vacancies respectively and reduce the energy loss.

[0010] In some embodiments, L contains one or more of a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, and a substituted or unsubstituted arylarylene group.

[0011] In some examples, the phosphorus-containing passivating agent has the structure shown in formula (II) below, [ka] Here, R1, R2, R3, R4, and R5 each include one of the following: a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, and a substituted or unsubstituted aryl group. L contains one of the following: a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, or a substituted or unsubstituted arylarylene group. X contains one of either a halogen anion or a halogen-containing anionic group. 1≦n1≦4, 1≦n2≦10, 1≦n3≦4, and n1, n2, and n3 are integers.

[0012] In some examples, R1, R2, R3, R4, and R5 each contain one of the following: an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 1 to 10 carbon atoms, a phenyl group, and a substituted phenyl group, and the substituents of the substituted phenyl group include one or more of the following: a halogen, an alkyl group, a cycloalkyl group, an alkoxy group, an alkylthio group, an alkylsilyl group, and an alkoxysilyl group. Optionally, the substituents on the substituted phenyl group include one or more of the following: halogens, C1-C10 alkyl groups, C1-C10 cycloalkyl groups, C1-C10 alkoxy groups, C1-C10 alkylthio groups, C1-C10 alkylsilyl groups, and C1-C10 alkoxysilyl groups.

[0013] In some examples, R1 and R2 include one of a cycloalkyl group having 1 to 10 carbon atoms and a phenyl group. Optionally, R1 and R2 each contain either a cycloalkyl group having 1 to 10 carbon atoms or a phenyl group.

[0014] In some embodiments, R3, R4, and R5 each contain one alkyl group having 1 to 10 carbon atoms. Optionally, R3, R4, and R5 each contain one alkyl group having 1 to 10 carbon atoms.

[0015] In some examples, L comprises one of the following: an alkylene group having 1 to 10 carbon atoms, a cycloalkylene group having 1 to 10 carbon atoms, a phenylene group, and a substituted phenylene group, wherein the substituents of the substituted phenylene group comprise one or more of the following: halogen, alkyl group, cycloalkyl group, alkoxy group, alkylthio group, alkylsilyl group, and alkoxysilyl group. Optionally, the substituents on the substituted phenylene group include one or more of the following: halogens, C1-C10 alkyl groups, C1-C10 cycloalkyl groups, C1-C10 alkoxy groups, C1-C10 alkylthio groups, C1-C10 alkylsilyl groups, and C1-C10 alkoxysilyl groups.

[0016] In some embodiments, L includes one alkylene group having 1 to 10 carbon atoms.

[0017] In some embodiments, X comprises either an iodide ion or a boron tetrafluoride ion.

[0018] In some examples, the phosphorus-containing passivator is [ka] It contains one of the following structural formulas.

[0019] A second aspect of this application provides a perovskite solar cell comprising a phosphorus-containing passivator according to the first aspect of this application. By adding the phosphorus-containing passivator in the manufacturing process, a perovskite solar cell containing the phosphorus-containing passivator can be manufactured, which cooperatively passivates low-coordination lead ion defects, interface defects and iodine ion vacancy defects, thereby reducing the appearance of charge in the perovskite absorption layer and / or energy loss at the interface, and improving the photoelectric performance and stability of the perovskite solar cell.

[0020] In some embodiments, the perovskite solar cell includes a perovskite absorption layer containing the phosphorus-containing passivator, and when manufacturing the perovskite absorption layer, the phosphorus-containing passivator is added directly to passivate the low-coordination lead ion defects, interfacial defects, and iodine ion vacancy defects in the perovskite absorption layer.

[0021] Selectively, the mass ratio of the phosphorus-containing passivator in the perovskite absorption layer is 0.01% to 1%, and selectively, 0.05% to 0.5%. When the mass ratio of the phosphorus-containing passivator in the perovskite absorption layer is within the above range, low-coordination lead ion defects, interfacial defects, and iodine ion vacancy defects in the perovskite absorption layer can be effectively passed through.

[0022] In some embodiments, the perovskite solar cell includes a perovskite absorption layer and a passivation layer that are stacked and installed, the passivation layer being located on the light-receiving or light-emitting side of the perovskite absorption layer, the passivation layer containing the phosphorus-containing passivating agent, and optionally the thickness of the passivation layer being 0.1 nm to 10 nm, and optionally 1 nm to 10 nm.

[0023] By forming a passivation layer on the upper surface or the lower surface of the perovskite light-absorbing layer, the low-coordination lead ion defects, interface defects, and iodine ion vacancy defects of the perovskite light-absorbing layer can be passivated. When the thickness of the passivation layer is within the above range, the low-coordination lead ion defects, interface defects, and iodine ion vacancy defects of the perovskite light-absorbing layer can be effectively passivated.

[0024] In some embodiments, the perovskite light-absorbing layer contains an active substance with a molecular formula of ABX3 or A2CDX6. Optionally, the active substance with a molecular formula of ABX3 or A2CDX6 (1) A contains one or more of an organic cation and an inorganic cation. Optionally, A contains one or more of a monovalent amidinium cation, a monovalent amino cation, and Cs + ; (2) B contains one or more of an organic cation and an inorganic cation. Optionally, B contains one or more of Pb 2+ and Sn 2+ ; (3) C contains one or more of an organic cation and an inorganic cation. Optionally, C contains Ag + ; (4) D contains one or more of an organic cation and an inorganic cation. Optionally, D contains one or more of Bi 3+ , Sb 3+ , and In 3+ ; (5) X contains one or more of an organic anion and an inorganic anion. Optionally, X contains one or more of Br - and I - . It has at least one of the above characteristics.

[0025] In some embodiments, the perovskite light-absorbing layer (1) The thickness of the perovskite light-absorbing layer is 100 nm to 1000 nm. (2) The perovskite absorption layer has a band gap width ranging from 1.2 eV to 2.3 eV, and has at least one of these characteristics.

[0026] When the thickness of the perovskite absorption layer is within the above range, sunlight can be effectively absorbed, achieving optimal photoelectric conversion efficiency and stability. When the bandgap width of the perovskite absorption layer is within the above range, a relatively high visible light absorption efficiency can be achieved.

[0027] In some embodiments, the perovskite solar cell further includes an electron transport layer located on the light-emitting side of the perovskite absorption layer, a blocking layer, and an electrode layer, wherein the electron transport layer, the blocking layer, and the electrode layer are stacked in order, and the electron transport layer is closer to the perovskite absorption layer. Optionally, the blocking layer material comprises one or more of 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline, SnO2, ZnO, and cerium-containing oxides. The thickness of the blocking layer is optionally 0.5 nm to 20 nm.

[0028] The blocking layer can effectively block hole transport and reduce energy loss due to charge compounding. By using the above-mentioned material to manufacture the blocking layer, the blocking layer can have a relatively low upper end of the valence band, further improving the hole transport effect of the blocking layer. When the thickness of the blocking layer is within the above-mentioned range, holes can be effectively blocked without becoming too thick and affecting electron transport.

[0029] A third aspect of this application provides a photovoltaic module, the photovoltaic module comprising a perovskite solar cell according to a second aspect of this application. Perovskite solar cells have high photoelectric conversion efficiency and good stability, which can improve the photoelectric efficiency and stability of the photovoltaic module.

[0030] A fourth aspect of this application provides a photovoltaic power generation system, the photovoltaic power generation system including a photovoltaic module according to the third aspect of this application. The photovoltaic power generation system utilizes perovskite solar cells in the photovoltaic module to directly convert solar radiation energy into electrical energy, which is highly efficient and stable.

[0031] A fifth aspect of this application provides a power consumption device, the power consumption device including a perovskite solar cell according to a second aspect of this application. [Brief explanation of the drawing]

[0032] To more clearly explain the technical concept of this application, the following is a brief introduction to the drawings used in this application. Obviously, the drawings described below represent only a few embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any creative effort. [Figure 1] This is a schematic diagram of the structure of a perovskite solar cell according to one embodiment of the present application. [Figure 2] This is a schematic diagram of the structure of a perovskite solar cell according to one embodiment of the present application. [Figure 3] This is a schematic diagram of the structure of a perovskite solar cell according to one embodiment of the present application. [Figure 4] This is a schematic diagram of a power consumption device that uses a perovskite solar cell as a power source according to one embodiment of this application.

[0033] To facilitate understanding of this application, the application will be described more comprehensively below with reference to the relevant drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be realized in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the disclosures of this application.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art relating to the present application. The terms used herein in the specification are solely for the purpose of describing specific embodiments and are not intended to limit the present application.

[0035] In this application, the technical features described in an open manner include closed technical proposals consisting of the enumerated features, as well as open technical proposals that include the enumerated features.

[0036] For the sake of simplification, this specification specifically discloses only a few numerical ranges. However, any lower limit can be combined with any upper limit to form an unspecified range, and any lower limit can be combined with other lower limits to form an unspecified range, and similarly, any upper limit can be combined with any other upper limit to form an unspecified range. Furthermore, each individually disclosed point or single numerical value itself can be combined with any other point or single numerical value, or with other lower limits or upper limits, to form an unspecified range, acting as a lower or upper limit.

[0037] The “range” disclosed in this application is limited in the form of a lower limit and an upper limit, and a given range is limited by selecting one lower limit and one upper limit, which define the boundary of a particular range. The range thus limited may or may not include the endpoints, and any combination is possible, that is, any lower limit can be combined with any upper limit to form a range. For example, if the ranges 60-120 and 80-110 are listed for a particular parameter, it is understood that the ranges 60-110 and 80-120 can also be assumed. Furthermore, if 1 and 2 are listed as the minimum range values ​​and 3, 4, and 5 are listed as the maximum range values, then the ranges 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5 can all be assumed. In this application, unless otherwise specified, the numerical range “a-b” represents an abbreviated expression for any combination of real numbers a-b, where a and b are both real numbers. For example, the numerical range "0 to 5" indicates that all real numbers between "0 to 5" have already been listed in this specification, and "0 to 5" is simply a shortened expression for combinations of these numbers. Also, when a parameter is described as an integer ≥ 2, it is equivalent to disclosing that this parameter is, for example, an integer such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0038] In this application, with respect to numerical intervals, unless otherwise specified, the intervals are considered continuous and include the minimum and maximum values ​​within that range, as well as each value between such minimum and maximum values. Furthermore, if a range refers to an integer, it includes each integer between the minimum and maximum values ​​within that range. If multiple ranges describing features or characteristics are provided, these ranges may be combined. In other words, unless otherwise specified, all ranges disclosed herein should be understood to include any and all subranges contained therein.

[0039] Unless otherwise specified, all embodiments and optional embodiments of this application can be combined to form new technical inventions.

[0040] Unless otherwise specified, all technical features and optional technical features of this application can be combined to form new technical concepts.

[0041] Unless otherwise specified, all steps of this application may be performed sequentially or randomly, preferably sequentially. For example, if a method includes steps (a) and (b), it means that the method may include steps (a) and (b) performed sequentially, or steps (b) and (a) performed sequentially. For example, if a method described above may further include step (c), it means that step (c) may be added to the method in any order, for example, the method may include steps (a), (b) and (c), or steps (a), (c) and (b), or steps (c), (a) and (b), and so on.

[0042] Unless otherwise specified, the terms “includes” and “inclusion” as used in this application may be open or closed. For example, “includes” and “inclusion” may further include or include other components not listed, or may include or include only the listed components.

[0043] In this specification, unless otherwise specified, "above" and "below" include the number of items, and "one or more" means two or more.

[0044] In this specification, unless otherwise specified, the term "or" is inclusive. That is, the phrase "A or B" means "A, B, or both A and B." More specifically, the conditions A is true (or exists) and B is false (or does not exist), the condition A is false (or does not exist) but B is true (or exists), and the condition both A and B are true (or exist) all satisfy "A or B."

[0045] Unless otherwise specified, the numerical values ​​of each parameter referred to in this application can be measured using various measurement methods commonly used in the art (for example, they can be tested according to the methods shown in the embodiments of this application).

[0046] In related technologies, when perovskite solar cells are manufactured into films, a large number of defects occur in the bulk phase and on the surface. The presence of these defects affects the photoelectric performance and stability of perovskite solar cells, and passivating these defects is a problem that must be urgently addressed during the manufacturing of perovskite solar cells.

[0047] Currently, methods for filling these defects can be broadly categorized into passivation using Lewis acids, Lewis bases, anions, and cations. Conventional Lewis base passivators have mostly consisted of molecules or ions containing atoms such as nitrogen, sulfur, and oxygen, and their passivation effects are limited.

[0048] According to the above problem, a first aspect of this application provides a phosphorus-containing passivator comprising an ionic compound containing a cationic group, wherein the cationic group has the structure shown in the following formula (I). ALB (I) Here, A represents an organophosphorus group with a lone pair of electrons, B represents an organophosphorus base with a positive charge, and L represents a linking group between the organophosphorus group and the organophosphorus base.

[0049] It should be explained that the number of organophosphorus groups contained in the cation group may be one or more, and may be set according to the actual requirements. Similarly, the number of organophosphorus bases contained in the cation group may be one or more, and may be set according to the actual requirements. The organophosphorus bases may have one positive charge or multiple positive charges.

[0050] The organophosphorus group and organophosphorus base in the cation group are linked via L.

[0051] To understand this, phosphorus-containing passivators contain an organophosphorus group with a lone pair of electrons and a positively charged organophosphorus base. The lone pair of electrons of the organophosphorus group forms a relatively strong P-Pb coordination bond with lead ions unsaturated to the perovskite absorption layer bulk phase and / or upper and lower interfaces, thereby passivating low-coordination lead ion defects. The organophosphorus base forms low-dimensional perovskite at the upper and lower interfaces of the perovskite layer, passivating the perovskite layer interface and suppressing ion movement. Therefore, the synergistic effect of the organophosphorus group and the organophosphorus base can improve the photoelectric performance and stability of perovskite solar cells.

[0052] In some embodiments, the ionic compound further comprises an anionic group, the anionic group comprising one or more of halogen anions, pseudohalogen anions, tetrafluoroborate ions, hexafluorophosphate ions, and dimethanesulfonamide ions. Halogen anions and halogen-containing anionic groups can passivate iodide ion vacancies and reduce energy loss, respectively.

[0053] It should be explained that a halogen anion is an anion formed after a halogen element gains one electron. A halogen-containing anionic group is an anionic group formed jointly by a halogen element and other elements.

[0054] The organophosphorus groups, organophosphorus bases, and halogen anions and / or halogen-containing anionic groups contained in the ionic compounds of this application can cooperatively passivate low-coordination lead ion defects, interfacial defects, and iodine ion vacancy defects, thereby reducing the appearance of charge in the perovskite absorption layer and / or energy loss at the interface, and improving the photoelectric performance and stability of perovskite solar cells.

[0055] In some embodiments, L includes one or more of substituted or unsubstituted alkylene groups, substituted or unsubstituted cycloalkylene groups, and substituted or unsubstituted arylene groups.

[0056] An alkylene group refers to a hydrocarbon group formed around two monovalent groups by removing one hydrogen atom from an alkyl group, and it may be a saturated branched alkyl group or a saturated linear alkyl group. For example, "C1-C9 alkylene group" refers to a group in which the alkyl group contains 1 to 9 carbon atoms, and each instance may be independently of each other a C1 alkylene group, a C4 alkylene group, a C5 alkylene group, a C6 alkylene group, a C7 alkylene group, a C8 alkylene group, or a C9 alkylene group. Appropriate examples include, but are not limited to, the methylene group (-CH2-), 1,1-ethylene group (-CH(CH3)-), 1,2-ethylene group (-CH2CH2-), 1,1-propylene group (-CH(CH2CH3)-), 1,2-propylene group (-CH2CH(CH3)-), 1,3-propylene group (-CH2CH2CH2-), and 1,4-butylene group (-CH2CH2CH2CH2-).

[0057] A cycloalkylene group refers to a non-aromatic hydrocarbon containing a ring carbon atom formed around two monovalent groups by removing one hydrogen atom from a cycloalkyl group, and may be a monocycloalkylene group, a spirocycloalkylene group, or a crosslinked cycloalkylene group. A phrase containing this term, for example, "C3-C9 cycloalkylene group," refers to a cycloalkylene group containing 3 to 9 carbon atoms, and each occurrence may independently be a cyclopropylene group, cyclobutylidene group, cyclopentylidene group, cyclohexylidene group, cycloheptylidene group, cyclooctylidene group, or cyclononylidene group. A cycloalkylene group may further contain one or more double bonds, and typical examples of cycloalkylene groups containing double bonds include cyclopentenylidene group, cyclohexenylidene group, cyclohexadienylidene group, and cyclobutadienylidene group.

[0058] An arylene group refers to an aromatic hydrocarbon group formed by removing two hydrogen atoms from an aromatic ring compound. It may be a monocyclic arylene group, a fused ring arylene group, or a polycyclic arylene group. In the case of a polycyclic ring species, at least one is an aromatic ring system. For example, "C6~C 20 The term "arylene group" refers to an arylene group containing 6 to 20 carbon atoms, and each instance is independently of the others, such as a C6 arylene group and a C6 arylene group. 10 Allirene group, C 14 Allirene group, C 18 Arylene group or C 20 It may also be an arylene group.

[0059] In one possible embodiment, the phosphorus-containing passivator has the structure shown in the following formula (II): [ka] Here, R1, R2, R3, R4, and R5 each include one of the following: a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, and a substituted or unsubstituted aryl group. L contains one of the following: a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, or a substituted or unsubstituted arylene group. X contains one of either a halogen anion or a halogen-containing anionic group. 1≦n1≦4, 1≦n2≦10, 1≦n3≦4, and n1, n2, and n3 are integers.

[0060] It should be explained that R1, R2, R3, R4, and R5 each contain one of the following: a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, or a substituted or unsubstituted aryl group. n1, n2, and n3 are each integers.

[0061] An alkyl group refers to a saturated hydrocarbon containing a primary (positive) carbon atom, a secondary carbon atom, a tertiary carbon atom, a quaternary carbon atom, or a combination thereof. A phrase containing this term, for example, "C1-C9 alkyl group," refers to an alkyl group containing 1 to 9 carbon atoms, and each instance may independently be a C1 alkyl group, C2 alkyl group, C3 alkyl group, C4 alkyl group, C5 alkyl group, C6 alkyl group, C7 alkyl group, C8 alkyl group, or C9 alkyl group.

[0062] A cycloalkyl group refers to a non-aromatic hydrocarbon containing a ring carbon atom, and may be a monocycloalkyl group, a spirocycloalkyl group, or a crosslinked cycloalkyl group. A phrase containing this term, for example, "C3-C9 cycloalkyl group," refers to a cycloalkyl group containing 3 to 9 carbon atoms, and each occurrence may independently be a C3 cycloalkyl group, C4 cycloalkyl group, C5 cycloalkyl group, C6 cycloalkyl group, C7 cycloalkyl group, C8 cycloalkyl group, or C9 cycloalkyl group. Suitable examples include, but are not limited to, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, and cycloheptyl groups. Furthermore, a "cycloalkyl group" may further contain one or more double bonds; typical examples of cycloalkyl groups containing double bonds include cyclopentenyl, cyclohexenyl, cyclohexadienyl, and cyclobutadienyl groups.

[0063] An aryl group refers to an aromatic hydrocarbon group produced by removing one hydrogen atom from an aromatic ring compound. It may be a monocyclic aryl group, a fused ring aryl group, or a polycyclic aryl group. In the case of a polycyclic ring species, at least one of the rings is an aromatic ring system. For example, "C6~C 20 The term "aryl group" refers to an aryl group containing 6 to 20 carbon atoms, and each instance is independently defined as a C6 aryl group, 10 Aryl group, C 14 Aryl group, C 18 Aryl group or C 20It may also be an aryl group. Suitable examples include, but are not limited to, benzene, biphenyl, naphthalene, anthracene, phenanthrene, perylene, triphenylene and their derivatives.

[0064] It should be explained that "substituted or unsubstituted" means that the defined group may or may not be substituted. If the defined group is substituted, it should be understood that it is substituted with a group that is optionally acceptable in this art, including, but not limited to, alkyl groups, alkoxy groups, alkenyl groups, alkynyl groups, aryl groups, heteroaryl groups, heteroalkyl groups, heterocyclyl groups, amino groups, and halogens.

[0065] In some examples, R1, R2, R3, R4, and R5 include one of the following: an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 1 to 10 carbon atoms, a phenyl group, and a substituted phenyl group. The substituents on the substituted phenyl group include one or more of the following: halogen, alkyl group, cycloalkyl group, alkoxy group, alkylthio group, alkylsilyl group, and alkoxysilyl group.

[0066] It should be explained that R1, R2, R3, R4, and R5 each contain one of the following: an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 1 to 10 carbon atoms, a phenyl group, or a substituted phenyl group.

[0067] In some optional embodiments, the substituents on the substituted phenyl group include one or more of the following: halogens, C1-C10 alkyl groups, C1-C10 cycloalkyl groups, C1-C10 alkoxy groups, C1-C10 alkylthio groups, C1-C10 alkylsilyl groups, and C1-C10 alkoxysilyl groups.

[0068] An alkoxy group refers to a group having an -O-alkyl group, where the alkyl group is linked to the parent structure via an oxygen atom. A phrase containing this term, such as "C1-C9 alkoxy group," refers to a group in which the alkyl group contains 1 to 9 carbon atoms, and each instance may independently be a C1 alkoxy group, C4 alkoxy group, C5 alkoxy group, C6 alkoxy group, C7 alkoxy group, C8 alkoxy group, or C9 alkoxy group. Suitable examples include, but are not limited to, the methoxy group (-O-CH3 or -OMe), the ethoxy group (-O-CH2CH3 or -OEt), and the tert-butoxy group (-OC(CH3)3 or -OtBu).

[0069] An alkylthio group refers to a group in which at least one carbon atom is replaced by a sulfur atom based on an alkyl group, and the alkyl group is linked to the parent structure via the sulfur atom.

[0070] An alkylsilyl group refers to a group in which at least one carbon atom is replaced by a silicon element based on an alkyl group, and the alkyl group is linked to the parent structure via a silicon atom.

[0071] An alkoxysilyl group refers to a group based on an alkyl group in which at least one carbon atom is replaced by a silicon element, and the alkoxy group is linked to the parent structure via the silicon atom.

[0072] In some embodiments, R1 and R2 include one of a cycloalkyl group having 1 to 10 carbon atoms and a phenyl group.

[0073] It should be explained that R1 and R2 each contain either a cycloalkyl group with 1 to 10 carbon atoms or a phenyl group.

[0074] In some optional embodiments, R1 and R2 each contain either a cycloalkyl group having 1 to 10 carbon atoms or a phenyl group.

[0075] In some embodiments, R3, R4, and R5 include one alkyl group having 1 to 10 carbon atoms.

[0076] It should be explained that R3, R4, and R5 each contain one alkyl group with 1 to 10 carbon atoms.

[0077] In some optional embodiments, R3, R4, and R5 each contain one of the alkyl groups having 1 to 10 carbon atoms.

[0078] In one possible embodiment, L comprises one of the following: an alkylene group having 1 to 10 carbon atoms, a cycloalkylene group having 1 to 10 carbon atoms, a phenylene group, and a substituted phenylene group, wherein the substituents on the substituted phenylene group include one or more of the following: halogen, alkyl group, cycloalkyl group, alkoxy group, alkylthio group, alkylsilyl group, and alkoxysilyl group.

[0079] In some optional embodiments, the substituents on the substituted phenylene group include one or more of halogens, C1-C10 alkyl groups, C1-C10 cycloalkyl groups, C1-C10 alkoxy groups, C1-C10 alkylthio groups, C1-C10 alkylsilyl groups, and C1-C10 alkoxysilyl groups.

[0080] In some embodiments, L includes one alkylene group having 1 to 10 carbon atoms.

[0081] In some embodiments, X includes one of either an iodide ion or a boron tetrafluoride ion.

[0082] In some examples, the phosphorus-containing passivating agent was [ka] It contains one of the M1 to M18 structural formulas.

[0083] A second aspect of this application provides a perovskite solar cell comprising a phosphorus-containing passivator of the first aspect of this application. By adding the phosphorus-containing passivator in the manufacturing process, a perovskite solar cell containing the phosphorus-containing passivator can be manufactured, in which the phosphorus-containing passivator can cooperatively passivate low-coordination lead ion defects, interfacial defects and iodine ion vacancy defects, thereby reducing the appearance of charge in the perovskite absorption layer and / or energy loss at the interface, and improving the photoelectric performance and stability of the perovskite solar cell.

[0084] In some embodiments, the perovskite solar cell includes a perovskite absorption layer containing a phosphorus-containing passivator. When manufacturing the perovskite absorption layer, the phosphorus-containing passivator is added directly to passivate the low-coordination lead ion defects, interfacial defects, and iodine ion vacancy defects in the perovskite absorption layer.

[0085] In several optional embodiments, the mass ratio of the phosphorus-containing passivator in the perovskite absorbance layer is 0.01% to 1%, and for example, the mass ratio of the phosphorus-containing passivator in the perovskite absorbance layer may be 0.01%, 0.05%, 0.1%, 0.15%, 0.2%, 0.25%, 0.3%, 0.35%, 0.4%, 0.45%, 0.5%, 0.55%, 0.6%, 0.65%, 0.7%, 0.75%, 0.8%, 0.85%, 0.9%, 0.95%, 1%, and any two of the above values, but is not limited to these. When the mass ratio of the phosphorus-containing passivator in the perovskite absorbance layer is within the above range, low-coordination lead ion defects, interfacial defects, and iodine ion vacancy defects in the perovskite absorbance layer can be effectively passed through. The mass ratio of phosphorus-containing passivator in the perovskite absorption layer is optionally 0.05% to 0.5%.

[0086] For example, the mass ratio of the phosphorus-containing passivator mentioned above in the perovskite absorption layer may be measured by obtaining the perovskite absorption layer powder and determining the phosphorus content in the absorption layer by elemental analysis.

[0087] In some embodiments, the perovskite solar cell includes a perovskite absorption layer and a passivation layer that are stacked together, the passivation layer being located on the light-receiving or light-emitting side of the perovskite absorption layer, and the passivation layer containing a phosphorus-containing passivating agent. By forming a passivation layer on the upper or lower surface of the perovskite absorption layer, low-coordination lead ion defects, interfacial defects, and iodide ion vacancy defects in the perovskite absorption layer can be passed through.

[0088] It should be explained that the "light-ingressing side" refers to the side where sunlight enters the perovskite absorption layer, and the "light-exiting side" refers to the side where sunlight penetrates the perovskite absorption layer.

[0089] In some optional embodiments, the thickness of the passivation layer is 0.1 nanometers (nm) to 10 nanometers, and for example, the thickness of the passivation layer may be 0.1 nm, 0.5 nm, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or in the range between any two of the above values, but is not limited to these. When the thickness of the passivation layer is within the above range, low-coordination lead ion defects, interfacial defects, and iodine ion vacancy defects in the perovskite absorption layer can be effectively passed through. Optionally, the thickness of the passivation layer is 1 nm to 10 nm.

[0090] For example, the thickness of the passivation layer mentioned above may be measured using instruments such as an ellipsometer or an atomic force microscope.

[0091] In some embodiments, the perovskite absorption layer comprises an active material having the molecular formula ABX3 or A2CDX6.

[0092] Optionally, A comprises one or more organic and inorganic cations, and further optionally, A comprises a monovalent amidino cation, a monovalent amino cation, and Cs + Includes one or more of the following.

[0093] Optionally, B includes one or more organic and inorganic cations, and further optionally, B includes Pb 2+ and Sn 2+ Includes one or more of the following.

[0094] Optionally, C includes one or more organic and inorganic cations, and further optionally, C includes Ag + Includes.

[0095] Optionally, D includes one or more organic and inorganic cations, and further optionally, D includes Bi 3+ Sb 3+ , and In 3+ Includes one or more of the following.

[0096] Optionally, X includes one or more organic and inorganic anions, and further optionally, X includes Br - and I - Includes one or more of the following.

[0097] In some embodiments, the thickness of the perovskite absorption layer is 100 nm to 1000 nm. For example, the thickness of the perovskite absorption layer may be 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or any two of the above values, but is not limited to these. When the thickness of the perovskite absorption layer is within the above range, sunlight can be effectively absorbed, achieving optimal photoelectric conversion efficiency and stability.

[0098] For example, the thickness of the perovskite absorption layer mentioned above may be measured using instruments such as an ellipsometer or an atomic force microscope.

[0099] In some embodiments, the bandgap width of the perovskite absorption layer includes 1.2 electron volts to 2.3 electron volts (eV). For example, the bandgap width of the perovskite absorption layer may be in the range of 1.2 eV, 1.3 eV, 1.4 eV, 1.5 eV, 1.6 eV, 1.7 eV, 1.8 eV, 1.9 eV, 2 eV, 2.1 eV, 2.2 eV, 2.3 eV, or any two of the above values, but is not limited to these. When the bandgap width of the perovskite absorption layer is within the above range, a relatively high visible light absorption efficiency can be obtained.

[0100] For example, the band gap width of the perovskite absorbance layer mentioned above may be measured by measuring the absorption spectrum of the perovskite absorbance layer with a UV-Vis spectrophotometer, measuring the emission spectrum of the perovskite absorbance layer with a photoluminescence fluorescence spectrometer, and calculating the band gap width of the perovskite absorbance layer from the intersection of the absorption spectrum and the emission spectrum.

[0101] In some embodiments, the perovskite solar cell further comprises a transparent conductive substrate, an electron transport layer, a hole transport layer, and an electrode layer, wherein the transparent conductive substrate, electron transport layer, perovskite absorption layer, hole transport layer, and electrode layer are stacked in order to form a cis-type device structure, and the perovskite absorption layer contains a phosphorus-containing passivator.

[0102] In some embodiments, the perovskite solar cell further comprises a transparent conductive substrate, an electron transport layer, a hole transport layer, and an electrode layer, wherein the transparent conductive substrate, hole transport layer, perovskite absorption layer, electron transport layer, and electrode layer are stacked in order to form a transformer-type device structure, and the perovskite absorption layer contains a phosphorus-containing passivator.

[0103] Figure 1 is a schematic diagram of the structure of a perovskite solar cell, where 11 represents a transparent conductive substrate, 12 represents an electron transport layer or hole transport layer, 13 represents a perovskite absorption layer, 14 represents a hole transport layer or electron transport layer, and 15 represents an electrode layer. When 12 represents an electron transport layer and 14 represents a hole transport layer, the transparent conductive substrate, electron transport layer, perovskite absorption layer, hole transport layer, and electrode layer are stacked in order to form a cis-type device structure, and the perovskite absorption layer contains a phosphorus-containing passivator. When 12 represents a hole transport layer and 14 represents an electron transport layer, the transparent conductive substrate, hole transport layer, perovskite absorption layer, electron transport layer, and electrode layer are stacked in order to form a transform-type device structure, and the perovskite absorption layer contains a phosphorus-containing passivator.

[0104] In some embodiments, the perovskite solar cell further comprises a transparent conductive substrate, an electron transport layer, a hole transport layer, and an electrode layer, wherein the transparent conductive substrate, electron transport layer, passivation layer, perovskite absorption layer, hole transport layer, and electrode layer are stacked in order to form a cis-type device structure, and the passivation layer contains a phosphorus-containing passivating agent.

[0105] In some embodiments, the perovskite solar cell further comprises a transparent conductive substrate, an electron transport layer, a hole transport layer, and an electrode layer, wherein the transparent conductive substrate, electron transport layer, perovskite absorption layer, passivation layer, hole transport layer, and electrode layer are stacked in order to form a cis-type device structure, and the passivation layer contains a phosphorus-containing passivating agent.

[0106] Figure 2 is a schematic diagram of the structure of a perovskite solar cell, where 21 represents a transparent conductive substrate, 22 represents an electron transport layer, 23 represents a passivation layer or perovskite absorption layer, 24 represents a perovskite absorption layer or passivation layer, 25 represents a hole transport layer, and 26 represents an electrode layer. When 23 represents a passivation layer and 24 represents a perovskite absorption layer, the transparent conductive substrate, electron transport layer, passivation layer, perovskite absorption layer, hole transport layer, and electrode layer are stacked in order to form a cis-type device structure, and the passivation layer contains a phosphorus-containing passivating agent. When 23 represents a perovskite absorption layer and 24 represents a passivation layer, the transparent conductive substrate, electron transport layer, perovskite absorption layer, passivation layer, hole transport layer, and electrode layer are stacked in order to form a cis-type device structure, and the passivation layer contains a phosphorus-containing passivating agent.

[0107] In some embodiments, the perovskite solar cell further includes an electron transport layer located on the light-emitting side of the perovskite absorption layer, a blocking layer, and an electrode layer, wherein the electron transport layer, blocking layer, and electrode layer are stacked in order, and the electron transport layer is closer to the perovskite absorption layer. The blocking layer can effectively block hole transport and reduce energy loss due to charge compounding.

[0108] In some optional embodiments, the blocking layer material comprises one or more of 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline (BCP), SnO2, ZnO, and cerium-containing oxides. By using the above materials to manufacture the blocking layer, the blocking layer can be given a relatively low upper end of the valence band, further improving the hole transport effect of the blocking layer.

[0109] In some optional embodiments, the thickness of the blocking layer is 0.5 nm to 20 nm. For example, the thickness of the blocking layer may be, but is not limited to, 0.50 nm, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, or any two of the above values. When the thickness of the blocking layer is within the above range, holes can be effectively blocked without being too thick and affecting electron transport.

[0110] For example, the thickness of the blocking layer mentioned above may be measured using instruments such as an ellipsometer or an atomic force microscope.

[0111] In some embodiments, the perovskite solar cell includes a transparent conductive substrate, a hole transport layer, a passivation layer, a perovskite absorption layer, an electron transport layer, a blocking layer, and an electrode layer, which are stacked in order, and the passivation layer contains a phosphorus-containing passivating agent.

[0112] In some embodiments, the perovskite solar cell includes a transparent conductive substrate, a hole transport layer, a perovskite absorption layer, a passivation layer, an electron transport layer, a blocking layer, and an electrode layer, which are stacked in order, and the passivation layer contains a phosphorus-containing passivating agent.

[0113] Figure 3 is a schematic diagram of the structure of a perovskite solar cell, where 31 represents a transparent conductive substrate, 32 represents a hole transport layer, 33 represents a passivation layer or perovskite absorption layer, 34 represents a perovskite absorption layer or passivation layer, 55 represents an electron transport layer, 36 represents a blocking layer, and 37 represents an electrode layer. When 33 represents a passivation layer and 34 represents a perovskite absorption layer, the transparent conductive substrate, hole transport layer, passivation layer, perovskite absorption layer, electron transport layer, blocking layer, and electrode layer are stacked in order to form a transformer-type device structure, and the passivation layer contains a phosphorus-containing passivating agent. When 33 represents a perovskite absorption layer and 34 represents a passivation layer, the transparent conductive substrate, hole transport layer, perovskite absorption layer, passivation layer, electron transport layer, blocking layer, and electrode layer are stacked in order to form a transformer-type device structure, and the passivation layer contains a phosphorus-containing passivating agent.

[0114] A transparent conductive substrate is used for light incidence. In some embodiments, the transparent conductive substrate comprises a substrate and a conductive material layer, the conductive material layer being located on the side of the substrate closer to the perovskite absorption layer.

[0115] In some of these embodiments, the conductive material in the conductive material layer includes one or more of the following: fluorine-doped tin dioxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), and indium-doped zinc oxide (IZO).

[0116] In some of these embodiments, the thickness of the transparent conductive substrate is 10 nm to 1000 nm. When the thickness of the transparent conductive substrate is within this range, light transmission can be guaranteed while simultaneously increasing its conductivity. For example, the thickness of the transparent conductive substrate may include, but is not limited to, a range of 10 nm, 50 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or any two of the above values.

[0117] The substrate in this application may be a glass substrate or a flexible substrate, but is not limited to these. The material of the flexible substrate may be an organic polymer material (but is not limited to this), and may be formed by mixing one or more of the following materials in different proportions: polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), polydimethylsiloxane (PDMS), etc.

[0118] The electron transport layer can extract and transport electron carriers and block the passage of free holes. In some embodiments, the material used for the electron transport layer is TiO2, ZnO, SnO2, [6,6]-phenyl C61 methyl butyrate (PC 61 BM), [6,6]-phenyl C71 methyl butyrate (PC 71 BM), Fullerene C 60 (C 60 ), fullerene C 70 (C 70 ), naphthalenediimide (NDI)-based materials, perylenediimide (PDI)-based materials, and one or more derivatives, dopants, passivates, and doping passivates of the above substances.

[0119] In some embodiments, the thickness of the electron transport layer is 5 nm to 100 nm. For example, the thickness of the electron transport layer may include, but is not limited to, a range of 5 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or any two of the above values. When the thickness of the electron transport layer is within the above range, the electron transport effect can be optimized.

[0120] The hole transport layer can extract and transport hole carriers and block the passage of free electrons. In some examples, the material used in the hole transport layer includes one or more of metal oxides, polymers, small molecules, and derivatives, dopants, passivates, and doping passivates of the above substances. Optionally, the metal oxide includes one or more of nickel oxide, molybdenum oxide, and tungsten oxide. Optionally, the polymer includes one or more of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), and poly[bis(4-phenyl)(4-butylphenyl)amine] (Poly-TPD). The small molecule optionally contains one or more of the following: 4-(3,6-dimethylcarbazole-9-yl)butylphosphonic acid (Me-4PACZ), 2-(3,6-dimethoxycarbazole-9-yl)ethylphosphonic acid (MeO-2PACZ), and 4-(carbazole-9-yl)butylphosphonic acid (4PACZ).

[0121] In some embodiments, the thickness of the hole transport layer is 0.1 nm to 100 nm. For example, the thickness of the hole transport layer may include, but is not limited to, a range of 0.1 nm, 1 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or any two of the above values. When the thickness of the hole transport layer is within the above range, the hole transport effect can be optimized.

[0122] In some embodiments, the electrode layer material includes one or more organic conductive materials and inorganic conductive materials, and optionally, the material used for the electrode layer includes one or more of silver, copper, carbon, gold, aluminum, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide.

[0123] In some possible embodiments, the thickness of the electrode layer is 10 nm to 1000 nm, and the charge collection effect can be optimized when the thickness of the electrode layer is within the above range. For example, the thickness of the electrode layer may include, but is not limited to, a range of 10 nm, 50 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or any two of the above values.

[0124] When a perovskite cell operates, after the perovskite absorption layer is irradiated with light, the electrons inside gain energy, break free from the constraints of the perovskite absorption layer, and form negatively charged electron carriers and positively charged hole carriers simultaneously, thereby obtaining electron-hole pairs. These free electrons and free holes are then transported in opposite directions through the corresponding transport layers, causing electron and hole flow, which constitutes an external current and realizes the conversion of light energy to electrical energy. Furthermore, after the perovskite absorption layer absorbs a photon, it is excited, generating electron-hole pairs. These electron-hole pairs further dissociate to form free carriers with opposite charges. The free electrons are transported to the positive electrode through the electron transport layer, and the free holes are transported to the negative electrode through the hole transport layer. The two types of free carriers are collected by the corresponding electrodes, and further form a photocurrent in the perovskite cell circuit.

[0125] To make it easier to understand, one of the transparent conductive substrate and electrode layers can act as a positive electrode, collecting electron carriers transported through the electron transport layer, and the other can act as a negative electrode, collecting hole carriers transported through the hole transport layer.

[0126] In some embodiments, a method for manufacturing a perovskite solar cell includes the steps of: manufacturing an electron transport layer on the side of a transparent conductive substrate having a conductive material layer; manufacturing a perovskite absorption layer containing a phosphorus-containing passivator on the side of the electron transport layer away from the transparent conductive substrate; manufacturing a hole transport layer on the side of the perovskite absorption layer away from the electron transport layer; and manufacturing an electrode layer on the side of the hole transport layer away from the perovskite absorption layer. A cis-type device structure is manufactured by employing this method.

[0127] In some embodiments, a method for manufacturing a perovskite solar cell includes the steps of: manufacturing a hole transport layer on the side of a transparent conductive substrate having a conductive material layer; manufacturing a perovskite absorption layer containing a phosphorus-containing passivator on the side of the hole transport layer away from the transparent conductive substrate; manufacturing an electron transport layer on the side of the perovskite absorption layer away from the hole transport layer; and manufacturing an electrode layer on the side of the electron transport layer away from the perovskite absorption layer. A transformer-type device structure is manufactured by employing this method.

[0128] In some embodiments, a method for manufacturing a perovskite solar cell includes the steps of: manufacturing an electron transport layer on the side of a transparent conductive substrate having a conductive material layer; manufacturing a passivation layer containing a phosphorus-containing passivating agent on the side of the electron transport layer away from the transparent conductive substrate; manufacturing a perovskite absorption layer on the side of the passivation layer away from the electron transport layer; manufacturing a hole transport layer on the side of the perovskite absorption layer away from the passivation layer; and manufacturing an electrode layer on the side of the hole transport layer away from the perovskite absorption layer. A cis-type device structure is manufactured by employing this method.

[0129] In some embodiments, a method for manufacturing a perovskite solar cell includes the steps of: manufacturing an electron transport layer on the side of a transparent conductive substrate having a conductive material layer; manufacturing a perovskite absorption layer on the side of the electron transport layer away from the transparent conductive substrate, manufacturing a passivation layer containing a phosphorus-containing passivating agent on the side of the perovskite absorption layer away from the electron transport layer; manufacturing a hole transport layer on the side of the passivation layer away from the perovskite absorption layer; and manufacturing an electrode layer on the side of the hole transport layer away from the passivation layer. A cis-type device structure is manufactured by employing this method.

[0130] In some embodiments, a method for manufacturing a perovskite solar cell includes the steps of: manufacturing a hole transport layer on the side of a transparent conductive substrate having a conductive material layer; manufacturing a passivation layer containing a phosphorus-containing passivating agent on the side of the hole transport layer away from the transparent conductive substrate; manufacturing a perovskite absorption layer on the side of the passivation layer away from the hole transport layer; manufacturing an electron transport layer on the side of the perovskite absorption layer away from the passivation layer; manufacturing a blocking layer on the side of the electron transport layer away from the perovskite absorption layer; and manufacturing an electrode layer on the side of the blocking layer away from the electron transport layer. A transformer-type device structure is manufactured by employing this method.

[0131] In some embodiments, a method for manufacturing a perovskite solar cell includes the steps of: manufacturing a hole transport layer on the side of a transparent conductive substrate having a conductive material layer; manufacturing a perovskite absorption layer on the side of the hole transport layer away from the transparent conductive substrate; manufacturing a passivation layer containing a phosphorus-containing passivating agent on the side of the perovskite absorption layer away from the hole transport layer; manufacturing an electron transport layer on the side of the passivation layer away from the perovskite absorption layer; manufacturing a blocking layer on the side of the electron transport layer away from the perovskite absorption layer; and manufacturing an electrode layer on the side of the blocking layer away from the electron transport layer. A transformer-type device structure is manufactured by employing this method.

[0132] In some of these embodiments, the passivation layer may be manufactured by employing one of the following methods: spin coating, spray coating, blade coating, slit coating, and roll-to-roll printing.

[0133] In some embodiments, the process of producing the passivation layer includes a step of producing a passivation layer slurry, and the solvent used in producing the passivation layer slurry includes one or more of water, methanol, ethanol, isopropanol, N,N-dimethylformamide, dimethyl sulfoxide, chloroform, chlorobenzene, and toluene. The concentration of the phosphorus-containing passivator in the passivation layer slurry is 0.001 mg / mL to 10 mg / mL, and for example, the concentration of the phosphorus-containing passivator in the passivation layer slurry may be, but is not limited to, 0.001 mg / mL, 0.01 mg / mL, 0.1 mg / mL, 1 mg / mL, 2 mg / mL, 3 mg / mL, 4 mg / mL, 5 mg / mL, 6 mg / mL, 7 mg / mL, 8 mg / mL, 9 mg / mL, 10 mg / mL, or any two of the above values.

[0134] To ensure clarity, the structure of the perovskite battery relating to this application is not limited to the structural layers listed above. Other functional layers, such as buffer layers, may be introduced as needed. In some embodiments, the perovskite battery may be equipped with a buffer layer of appropriate energy levels, which can reduce the energy barrier, promote energy level matching, and improve carrier extraction efficiency, while also performing one or more of the following effects: passivation of interfacial defect states, protection of the light-absorbing layer, suppression of water molecules, suppression of oxidative decomposition of the battery by oxygen gas, improvement of photoelectric conversion efficiency, and improvement of perovskite battery stability. Depending on the location of the buffer layer, there may be four types of buffer layers: a buffer layer between the hole transport layer and the anode, a buffer layer between the electron transport layer and the cathode, a buffer layer between the hole transport layer and the absorption layer, and a buffer layer between the electron transport layer and the absorption layer. Materials that can be used for the buffer layer in the perovskite battery may include, but are not limited to, Cu2O, NiO, AZO, TiO2, etc.

[0135] A third aspect of this application provides a photovoltaic module, the photovoltaic module comprising a perovskite solar cell according to a second aspect of this application.

[0136] The above-mentioned perovskite solar cells have high photoelectric conversion efficiency and good stability, and can improve the photoelectric efficiency and stability of solar power generation modules.

[0137] The above includes one or more perovskite solar cells, which may be selected depending on the specific application scenario. Furthermore, the above photovoltaic module includes multiple perovskite solar cells, which are connected in series or in parallel to form a battery cell.

[0138] In some of these embodiments, the photovoltaic module further includes a photovoltaic glass layer, an adhesive layer, and a backplate.

[0139] An adhesive layer is provided on each of the two surfaces of the battery cell. A back plate is provided on the surface of one of the adhesive layers that is separated from the battery cell, and a solar power generation glass layer is provided on the surface of the other adhesive layer that is separated from the battery cell.

[0140] The photovoltaic glass layer and backplate are used to protect the perovskite solar cell, providing sealing, insulation, and waterproofing functions. The adhesive layer adheres the photovoltaic glass layer to the battery cell and the backplate to the battery cell.

[0141] Optionally, the material of the solar power generation glass layer is tempered glass, the back plate material is TPT (polyfluoroethylene) or TPE (thermoplastic elastomer), and the adhesive layer material is EVA (polyethylene-polyvinyl acetate copolymer).

[0142] Furthermore, the above-mentioned solar power generation module further includes a junction box and an outer frame.

[0143] A junction box is used to protect the entire power generation system of the solar power module. It acts as a current relay station, and if a battery cell is short-circuited, the junction box automatically disconnects the short-circuited battery string.

[0144] The outer frame can support and protect the entire solar power generation module, and the frame may be made of aluminum alloy, which has excellent strength and corrosion resistance.

[0145] Furthermore, silica gel is used to bond and seal the connections between the frame and other parts of the photovoltaic module. The photovoltaic module can convert solar energy into electrical energy, send it to a battery for storage, or power the operation of a load.

[0146] In some of these embodiments, the photovoltaic power generation module is a solar cell panel.

[0147] A fourth aspect of this application provides a photovoltaic power generation system, the photovoltaic power generation system including a photovoltaic power generation module according to the third aspect of this application.

[0148] The photovoltaic power generation system utilizes perovskite solar cells in the above-mentioned photovoltaic power generation module to directly convert solar radiation energy into electrical energy, resulting in high efficiency and good stability. Furthermore, the above-mentioned photovoltaic power generation system is a photovoltaic system.

[0149] A photovoltaic module is the core component of a photovoltaic system, and the photovoltaic system includes one or more photovoltaic modules, which may be selected depending on the specific application scenario. Furthermore, if the photovoltaic system includes multiple photovoltaic modules, the multiple photovoltaic modules form a photovoltaic array.

[0150] The above-mentioned photovoltaic power generation system may be an independent photovoltaic system or a grid-connected photovoltaic system.

[0151] An independent photovoltaic system includes a solar power array, battery pack, charge controller, power converter (inverter), and load. Its operating principle is that solar radiation energy is first converted into electrical energy via the solar power array, then converted again by the power converter before being supplied to the load. At the same time, any excess electrical energy is stored in an energy storage device in the form of chemical energy via the charge controller. In the event of insufficient sunlight, the energy stored in the battery is boosted by a power converter, filter, and commercial frequency transformer, and then supplied to the AC load as 220V, 50Hz AC electrical energy.

[0152] The grid-connected photovoltaic system includes a photovoltaic array, a high-frequency DC / DC boost circuit, a power-electronic converter (inverter), and a system monitor. Its operating principle is that solar radiation energy is converted by the photovoltaic array, then further converted to high-frequency DC, becoming high-voltage DC, and then converted by a power-electronic inverter to output a sinusoidal AC current with a frequency matched to the grid voltage to the grid.

[0153] The two photovoltaic systems described above each have their own characteristics and may be selected depending on the specific application scenario.

[0154] A fifth aspect of this application provides a power consumption device, the power consumption device including a perovskite solar cell according to a second aspect of this application.

[0155] In some of these embodiments, the perovskite solar cell can be used as a power generator for a power consumption device. The type of power generator may include, but is not limited to, integrated power generation. The location of the power generator may include, but is not limited to, the roof or backplate of a vehicle.

[0156] Furthermore, the above-mentioned power-consuming devices may include, but are not limited to, mobile devices such as mobile phones and laptop computers, electric vehicles, electric trains, ships and satellites, and power generation systems.

[0157] Figure 4 shows an example of a power consumption device. This power consumption device is an automobile, and may further be a pure electric vehicle, a hybrid electric vehicle, or a plug-in hybrid electric vehicle.

[0158] Other examples of power-consuming devices may include mobile phones, tablet computers, laptop computers, and desktop calculators.

[0159] Another example of a power-consuming device could be a wearable device, such as a watch.

[0160] The beneficial effects of this application will be further explained below, along with examples.

[0161] To further clarify the technical problems, technical solutions, and beneficial effects addressed by this application, the examples and drawings are described in more detail. Clearly, the described examples represent only a selection of, and not all, examples of, this application. The following description of at least one exemplary example is for illustrative purposes only and does not limit this application or its applications in any way. All other examples derived from the examples in this application without requiring any creative effort from a person skilled in the art are all within the scope of protection of this application. All materials used in the examples and comparative examples of this application are commercially available.

[0162] Unless specific techniques or conditions are described in the examples, the procedures shall be carried out in accordance with the techniques or conditions described in the literature within this art, or in accordance with the product instructions. Unless the manufacturer is specified, the reagents or equipment used are all common products that are commercially available.

[0163] 1. Production of phosphorus-containing passivation agents 1. Production of phosphorus-containing passivation agent M1 Process 1: 1.86 g of compound 1 and 10 mL of tetrahydrofuran were added to three-necked flask 1. After compound 1 dissolved, the temperature was lowered to -78°C. 4 mL of a 2.5 M solution of n-butyllithium (n-BuLi) in n-hexane was added dropwise to three-necked flask 1, and the mixture was stirred for 2 hours to prepare for use. 2.81 g of compound 2 and 10 mL of tetrahydrofuran were added to three-necked flask 2. After compound 2 dissolved, the solution from three-necked flask 1 was added dropwise to three-necked flask 2, and the mixture was stirred for 12 hours. After the reaction was complete, the mixture was treated by silica gel column chromatography to obtain 2.79 g of compound 3, with a yield of 80%, and the results were measured to be as follows: 1 ¹H NMR (400 MHz, CD2Cl2) yielded δ values ​​of 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 3.03-2.98 (m, 2H), and 2.01-1.96 (m, 2H). The reaction process was as follows: [ka] That is the case.

[0164] Process 2: 340 mg of compound 3, 76 mg of trimethylphosphine (P(CH3)3), and 10 mL of o-dichlorobenzene (o-DCB) were added to a three-necked flask 3 and heated at 160°C for 12 hours. After the reaction was complete, the precipitated material was dissolved in 10 mL of water, and the aqueous phase was washed three times with 10 mL x 3 of dichloromethane. Finally, the water was removed by vacuum distillation to obtain 408 mg of phosphorus-containing passivation agent M1, with a yield of 98%. 1 ¹H NMR (400 MHz, D2O) yielded δ values ​​of 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 2.54-2.50 (m, 2H), 1.50-1.46 (m, 2H), and 0.89 (s, 9H). The reaction process was as follows: [ka] That is the case.

[0165] 2. Production of phosphorus-containing passivation agent M2 The preparation of phosphorus-containing passivation agent M2 and its distinction from phosphorus-containing passivation agent M1 are as follows: In process 2, 76 mg of trimethylphosphine (P(CH3)3) is replaced with 202 mg of tributylphosphine (PBu3), and the reaction and post-treatment steps ultimately yield 526 mg of phosphorus-containing passivation agent M2, with a yield of 97%, and the measurement revealed that 1 ¹H NMR (400 MHz, D2O) yielded δ values ​​of 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 2.54-2.48 (m, 8H), 1.50-1.38 (m, 14H), and 0.90 (s, 9H). The reaction process was as follows: [ka] That is the case.

[0166] 3. Production of phosphorus-containing passivation agent M3 The manufacturing process for phosphorus-containing passivation agent M3 and its distinction from phosphorus-containing passivation agent M1 are as follows:

[0167] (1) In process 1, 2.81 g of compound 2 was replaced with 2.96 g of compound 4, and after the reaction, 2.83 g of compound 5 was obtained, with a yield of 80%, and by measurement, 1 ¹H NMR (400 MHz, CD2Cl2) yielded δ values ​​of 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 2.94-2.88 (m, 2H), 1.91-1.86 (m, 2H), and 1.45-1.39 (m, 2H). The reaction process was as follows: [ka] That is the case.

[0168] (2) In process 2, 340 mg of compound 3 was replaced with 354 mg of compound 5, and 76 mg of trimethylphosphine (P(CH3)3) was replaced with 202 mg of tributylphosphine. The reaction and post-treatment steps ultimately yielded 536 mg of phosphorus-containing passivation agent M3, with a yield of 99%, and measurement confirmed that 1 ¹H NMR (400 MHz, D2O) yielded δ values ​​of 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 2.54-2.50 (m, 8H), 1.50-1.36 (m, 16H), and 0.89 (s, 9H). The reaction process was as follows: [ka] That is the case.

[0169] 4. Production of phosphorus-containing passivating agent M4 The manufacturing process for phosphorus-containing passivation agent M4 and its distinction from phosphorus-containing passivation agent M1 are as follows:

[0170] (1) In process 1, 2.81 g of compound 2 was replaced with 2.67 g of compound 6, and after the reaction, 2.36 g of compound 7 was obtained, with a yield of 72%, and by measurement, 1 ¹H NMR (400 MHz, CD2Cl2) δ values ​​of 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), and 2.96 (d, J = 7.2 Hz, 2H) were obtained. The reaction process was as follows: [ka] That is the case.

[0171] (2) In process 2, 340 mg of compound 3 was replaced with 326 mg of compound 7, and 76 mg of trimethylphosphine (P(CH3)3) was replaced with 202 mg of tributylphosphine. The reaction and post-treatment steps ultimately yielded 524 mg of phosphorus-containing passivation agent M4, with a yield of 99%, and measurement confirmed that1 ¹H NMR (400 MHz, D2O) yielded δ values ​​of 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 2.55-2.51 (m, 8H), 1.51-1.34 (m, 12H), and 0.91 (s, 9H). The reaction process was as follows: [ka] That is the case.

[0172] 5. Production of phosphorus-containing passivation agent M5 The manufacturing process for phosphorus-containing passivation agent M5 and its distinction from phosphorus-containing passivation agent M1 are as follows:

[0173] (1) In process 1, 1.86 g of compound 1 was replaced with 1.98 g of compound 8, and after the reaction, 2.82 g of compound 9 was obtained, with a yield of 79%, and by measurement, 1 ¹H NMR (400 MHz, CD2Cl2) yielded δ values ​​of 3.03-2.98 (m, 2H), 2.07-1.95 (m, 2H), and 1.62-1.29 (m, 22H). The reaction process was as follows: [ka] That is the case.

[0174] (2) In process 2, 340 mg of compound 3 was replaced with 352 mg of compound 9, and the reaction and post-treatment steps ultimately yielded 423 mg of phosphorus-containing passivating agent M5, with a yield of 99%, and the measurement confirmed that 1 ¹H NMR (400 MHz, D2O) yielded δ values ​​of 2.58-2.48 (m, 2H), 1.62-1.29 (m, 24H), and 0.90 (s, 9H). The reaction process was as follows: [ka] That is the case.

[0175] 6. Production of phosphorus-containing passivation agent M6 The manufacturing process for phosphorus-containing passivation agent M6 and its distinction from phosphorus-containing passivation agent M5 are as follows:

[0176] In process 2, 76 mg of trimethylphosphine was replaced with 202 mg of tributylphosphine, and the reaction and post-treatment steps ultimately yielded 423 mg of phosphorus-containing passivation agent M6, with a yield of 99%, and measurement confirmed that 1 ¹H NMR (400 MHz, D2O) yielded δ values ​​of 2.58-2.48 (m, 8H), 1.62-1.29 (m, 30H), and 0.89 (s, 9H). The reaction process was as follows: [ka] That is the case.

[0177] 7. Production of phosphorus-containing passivation agent M7 The manufacturing process for phosphorus-containing passivation agent M7 and its distinction from phosphorus-containing passivation agent M5 are as follows:

[0178] (1) In process 1, 2.81 g of compound 2 was replaced with 2.96 g of compound 4, and after the reaction, 2.82 g of compound 10 was obtained, with a yield of 79%, and by measurement, 1 ¹H NMR (400 MHz, CD2Cl2) yielded δ values ​​of 3.03-2.98 (m, 2H), 2.07-1.95 (m, 2H), and 1.62-1.29 (m, 26H). The reaction process was as follows: [ka] That is the case.

[0179] (2) In process 2, 352 mg of compound 9 was replaced with 366 mg of compound 10, and the reaction and post-treatment steps ultimately yielded 551 mg of phosphorus-containing passivating agent M7, with a yield of 99%, and the measurement confirmed that 1¹H NMR (400 MHz, D2O) yielded δ values ​​of 2.58-2.48 (m, 2H), 1.64-1.27 (m, 32H), and 0.90 (s, 9H). The reaction process was as follows: [ka] That is the case.

[0180] 8. Production of phosphorus-containing passivation agent M8 The manufacturing process for phosphorus-containing passivation agent M8 and its distinction from phosphorus-containing passivation agent M5 are as follows:

[0181] (1) In process 1, 2.81 g of compound 2 was replaced with 2.67 g of compound 6, and after the reaction, 2.88 g of compound 11 was obtained, with a yield of 78%, and by measurement, 1 ¹H NMR (400 MHz, CD2Cl2) yielded δ values ​​of 3.09–2.98 (m, 2H) and 1.62–1.29 (m, 22H). The reaction process was as follows: [ka] That is the case.

[0182] (2) In process 2, 352 mg of compound 9 was replaced with 352 mg of compound 11, and the reaction and post-treatment steps ultimately yielded 423 mg of phosphorus-containing passivating agent M8, with a yield of 99%, and the measurement confirmed that 1 ¹H NMR (400 MHz, D2O) yielded δ values ​​of 2.58-2.48 (m, 6H), 1.62-1.29 (m, 28H), and 0.90 (s, 9H). The reaction process was as follows: [ka] That is the case.

[0183] 9. Manufacture of phosphorus-containing passivation agent M9 The manufacturing process for phosphorus-containing passivation agent M9 and its distinction from phosphorus-containing passivation agent M1 are as follows:

[0184] (1) In process 1, 2.81 g of compound 2 was replaced with 2.88 g of compound 12, and after the reaction, 1.25 g of compound 13 was obtained, with a yield of 37%, and by measurement, 1 H NMR (400 MHz, CD2Cl2) δ 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J = 7.2 Hz, 8H), 2.79 (s, 4H), 1.30 (d, J = 7.2 Hz, 4H) were obtained. The reaction process is [ka] That is the case.

[0185] (2) In process 2, 340 mg of compound 3 was replaced with 346 mg of compound 13, and 76 mg of trimethylphosphine (P(CH3)3) was replaced with 202 mg of tributylphosphine. The reaction and post-treatment steps ultimately yielded 541 mg of phosphorus-containing passivation agent M9, with a yield of 99%, and the measurement confirmed that 1 ¹H NMR (400 MHz, D2O) yielded δ values ​​of 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J = 7.2 Hz, 8H), 2.55-2.51 (m, 16H), 1.51-1.34 (m, 24H), and 0.91 (s, 18H). The reaction process was as follows: [ka] That is the case.

[0186] 10. Manufacture of phosphorus-containing passivation agent M10 The manufacturing process for phosphorus-containing passivation agent M10 and its distinction from phosphorus-containing passivation agent M1 are as follows:

[0187] (1) In process 1, 2.81 g of compound 2 was replaced with 3.16 g of compound 14, and after the reaction, 1.27 g of compound 15 was obtained, with a yield of 34%, and by measurement, 1H NMR (400 MHz, CD2Cl2) δ 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J = 7.2 Hz, 8H), 2.95-2.87 (m, 4H), 1.47-1.38 (m, 4H), 1.24-1.17 (m, 4H) was obtained. The reaction process is [ka] That is the case.

[0188] (2) In process 2, 340 mg of compound 3 was replaced with 374 mg of compound 15, and 76 mg of trimethylphosphine (P(CH3)3) was replaced with 202 mg of tributylphosphine. The reaction and post-treatment steps ultimately yielded 446 mg of phosphorus-containing passivation agent M10, with a yield of 99%, and the measurement confirmed that 1 ¹H NMR (400 MHz, D2O) yielded δ values ​​of 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J = 7.2 Hz, 8H), 2.50-2.42 (m, 16H), 1.41-1.14 (m, 40H), and 0.90 (s, 18H). The reaction process was as follows: [ka] That is the case.

[0189] 11. Manufacture of phosphorus-containing passivation agent M11 100 mg of phosphorus-containing passivation agent M10 was passed through an ion exchange resin to obtain 98 mg of phosphorus-containing passivation agent M11, with a yield of 98%, and by measurement, 1 ¹H NMR (400 MHz, D2O) yielded δ values ​​of 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J = 7.2 Hz, 8H), 2.50-2.42 (m, 16H), 1.41-1.14 (m, 40H), and 0.90 (s, 18H). The reaction process was as follows: [ka] That is the case.

[0190] 12. Phosphorus-containing passivating agent M12 The manufacturing process for phosphorus-containing passivation agent M12 and its distinction from phosphorus-containing passivation agent M10 are as follows:

[0191] (1) In process 1, 3.16 g of compound 14 was replaced with 6.31 g, and after the reaction, 1.27 g of compound 16 was obtained, with a yield of 34%, and by measurement, 1 ¹H NMR (400 MHz, CD2Cl2) yielded δ values ​​of 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 2.95-2.87 (m, 6H), 1.47-1.38 (m, 2H), and 1.24-1.17 (m, 8H). The reaction process was as follows: [ka] That is the case.

[0192] (2) In process 2, 374 mg of compound 15 was replaced with 229 mg of compound 16, and the reaction and post-treatment steps ultimately yielded 415 mg of phosphorus-containing passivation agent M12, with a yield of 99%, and the measurement confirmed that 1 ¹H NMR (400 MHz, D2O) yielded δ values ​​of 7.42 (d, J = 7.2 Hz, 6H), 7.15 (d, J = 7.2 Hz, 4H), 2.50-2.42 (m, 6H), 1.41-1.14 (m, 64H), and 0.90 (s, 27H). The reaction process was as follows: [ka] That is the case.

[0193] 13. Phosphorus-containing passivating agent M13 The manufacturing process for phosphorus-containing passivation agent M13 and its distinction from phosphorus-containing passivation agent M10 are as follows:

[0194] (1) In process 1, 3.16 g of compound 14 was replaced with 2.11 g, and after the reaction, 1.51 g of compound 17 was obtained, with a yield of 56%, and by measurement, 1 ¹H NMR (400 MHz, CD2Cl2) yielded δ values ​​of 7.42 (d, J = 7.2 Hz, 18H), 7.15 (d, J = 7.2 Hz, 12H), 2.95-2.87 (m, 2H), 1.47-1.38 (m, 6H), and 1.24-1.17 (m, 8H). The reaction process was as follows: [ka] That is the case.

[0195] (2) In process 2, 374 mg of compound 15 was replaced with 806 mg of compound 17, and the reaction and post-treatment steps ultimately yielded 998 mg of phosphorus-containing passivation agent M13, with a yield of 98%, and the measurement confirmed that 1 ¹H NMR (400 MHz, D2O) yielded δ values ​​of 7.42 (d, J = 7.2 Hz, 18H), 7.15 (d, J = 7.2 Hz, 12H), 2.50-2.42 (m, 14H), 1.41-1.14 (m, 32H), and 0.90 (s, 9H). The reaction process was as follows: [ka] That is the case.

[0196] 14. Phosphorus-containing passivating agent M14 100 mg of phosphorus-containing passivation agent M13 was passed through an ion exchange resin to obtain 98 mg of phosphorus-containing passivation agent M14, with a yield of 98%, and the measurement revealed that 1 ¹H NMR (400 MHz, D2O) yielded δ values ​​of 7.42 (d, J = 7.2 Hz, 12H), 7.15 (d, J = 7.2 Hz, 8H), 2.50-2.42 (m, 16H), 1.41-1.14 (m, 40H), and 0.90 (s, 18H). The reaction process was as follows:

Chem.

[0197] 15. Phosphorus-containing passivator M15 The production of the phosphorus-containing passivator M15 and the distinction from the phosphorus-containing passivator M1 are as follows.

[0198] (1) In Process 1, 2.81 g of Compound 2 was replaced with 3.36 g of Compound 18, and 1.26 g of Compound 19 was obtained after the reaction, with a yield of 32%. By measurement, its 1 1H NMR (400 MHz, CD2Cl2) δ 7.44 - 7.40 (m, 6H), 7.17 - 7.13 (m, 4H), 4.02 - 3.98 (m, 2H), 2.11 - 2.07 (m, 4H), 1.67 - 1.32 (m, 5H) was obtained. The reaction process is

Chem.

[0199] (2) In Process 2, 340 mg of Compound 3 was replaced with 394 mg of Compound 19, and 76 mg of trimethylphosphine (P(CH3)3) was replaced with 202 mg of tributylphosphine. Finally, 587 mg of the phosphorus-containing passivator M15 was obtained through the reaction and post-treatment steps, with a yield of 98%. By measurement, its 1 1H NMR (400 MHz, D2O) δ 7.44 - 7.40 (m, 6H), 7.17 - 7.13 (m, 4H), 2.48 - 2.44 (m, 6H), 1.63 - 1.56 (m, 4H), 1.45 - 1.41 (m, 2H), 1.32 - 1.26 (m, 16H), 0.91 - 0.87 (m, 9H) was obtained. The reaction process is

Chem.

[0200] 16. Phosphorus-containing passivating agent M16 The manufacturing process for phosphorus-containing passivation agent M16 and its distinction from phosphorus-containing passivation agent M1 are as follows:

[0201] The reaction process in Process 1 was not necessary. In Process 2, 340 mg of Compound 3 was replaced with 394 mg of Compound 20, and 76 mg of trimethylphosphine (P(CH3)3) was replaced with 202 mg of tributylphosphine. The reaction and post-treatment steps ultimately yielded 601 mg of phosphorus-containing passivation agent M16, with a yield of 99%, and measurement confirmed that 1 ¹H NMR (400 MHz, D2O) yielded δ values ​​of 7.47-7.42 (m, 6H), 7.19-7.13 (m, 8H), 2.64 (s, 2H), 1.42-1.36 (m, 18H), and 0.93-0.89 (m, 9H). The reaction process was as follows: [ka] That is the case.

[0202] 17. Phosphorus-containing passivating agent M17 The manufacturing process for phosphorus-containing passivation agent M17 and its distinction from phosphorus-containing passivation agent M1 are as follows:

[0203] The reaction process in Process 1 was not necessary. In Process 2, 340 mg of Compound 3 was replaced with 462 mg of Compound 21, and 76 mg of trimethylphosphine (P(CH3)3) was replaced with 202 mg of tributylphosphine. The reaction and workup steps ultimately yielded 632 mg of phosphorus-containing passivator M17, with a yield of 95%, and measurement confirmed that 1 ¹H NMR (400 MHz, D2O) yielded δ values ​​of 7.19-7.13 (m, 8H), 7.00-6.96 (m, 4H), 3.81 (s, 6H), 2.64 (s, 2H), 1.42-1.36 (m, 18H), and 0.93-0.89 (m, 9H). The reaction process was as follows: [ka] That is the case.

[0204] 18. Phosphorus-containing passivating agent M18 The manufacturing process for phosphorus-containing passivation agent M18 and its distinction from phosphorus-containing passivation agent M1 are as follows:

[0205] (1) In process 1, 2.81 g of compound 2 was replaced with 3.33 g of compound 22, and after the reaction, 1.57 g of compound 23 was obtained, with a yield of 41%, and by measurement, 1 ¹H NMR (400 MHz, CD2Cl2) yielded δ values ​​of 7.44-7.40 (m, 6H), 7.17-7.13 (m, 4H), 3.96-3.92 (m, 4H), 3.13-3.08 (m, 2H), and 1.63-1.60 (m, 2H). The reaction process was as follows: [ka] That is the case.

[0206] (2) In process 2, 340 mg of compound 3 was replaced with 384 mg of compound 23, and 76 mg of trimethylphosphine (P(CH3)3) was replaced with 202 mg of tributylphosphine. The reaction and post-treatment steps ultimately yielded 582 mg of phosphorus-containing passivation agent M18, with a yield of 99%, and measurement confirmed that 1 ¹H NMR (400 MHz, D2O) yielded δ values ​​of 7.44-7.40 (m, 6H), 7.17-7.13 (m, 4H), 3.43-3.39 (m, 4H), 1.63-1.56 (m, 4H), 1.45-1.36 (m, 18H), and 0.91-0.87 (m, 9H). The reaction process was as follows: [ka] That is the case.

[0207] 2. Manufacturing of perovskite solar cells Example 1 (1) Twenty pieces of 2.0*2.0cm FTO conductive glass were taken, and 0.35cm of FTO was removed from both ends by laser etching to expose the glass substrate. The etched FTO conductive glass was then ultrasonically cleaned several times in sequence with water, acetone, and isopropanol. The solvent was blown dry from the FTO conductive glass using a nitrogen gas gun, and it was further cleaned in an ultraviolet ozone apparatus. Here, FTO conductive glass refers to glass obtained after forming a conductive material layer on one side of the glass substrate using fluorine-doped tin dioxide as the conductive material. (2) On an FTO substrate treated with ultraviolet ozone, 10 mg / mL of nickel oxide nanoparticles (with aqueous solution as the solvent) are spin-coated at a speed of 4000 rpm, and the mixture is annealed on a hot stage at 100°C for 30 minutes to produce a hole transport layer with a thickness of 35 nm. (3) Weigh lead iodide, iodoformamidine, cesium iodide, and lead bromide in a molar ratio of 97:3:95:5, and phosphorus-containing passivating agent M1, which accounts for 1 wt% of the four substances. Dissolve all of the solid powders in a mixed solution of DMF and DMSO in a volume ratio of 100:1, stir for 3 hours, filter through a 0.22 μm organic filtration membrane to obtain a perovskite precursor solution, spin coat the perovskite precursor solution on a hole transport layer at 3000 rpm, anneal at 100°C for 30 min, cool to room temperature to obtain a perovskite absorption layer with a thickness of 500 nm. (4) A chlorobenzene solution of PC61BM is spin-coated on the perovskite absorption layer at 1500 rpm, annealed at 100°C for 10 min to produce an electron transport layer with a thickness of approximately 30 nm, and then an isopropanol solution of BCP is spin-coated at 5000 rpm to produce a blocking layer with a thickness of 5 nm. (5) The obtained sheet was placed in a vapor deposition machine, and metal electrode Cu was deposited to produce an electrode layer with a thickness of approximately 100 nm.

[0208] Examples 2-18 and 21-24 The manufacturing methods of the perovskite solar cells in Examples 2 to 18 and 21 to 24 are substantially similar to the manufacturing method of the perovskite solar cell in Example 1. The differences mainly lie in that at least one of the type and / or dosage of the phosphorus-containing passivating agent, the type of the material of the blocking layer, the thickness of the blocking layer, the type of the material of the perovskite light-absorbing layer, the thickness of the perovskite light-absorbing layer, the type of the transparent conductive substrate, the type and / or thickness of the electron transport layer, the type and / or thickness of the hole transport layer, and the type and / or thickness of the electrode layer is different. For specific details, refer to Table 1.

[0209] As can be understood, when the type and / or dosage of the raw materials adopted in manufacturing the perovskite light-absorbing layer are different, the type of the material of the manufactured perovskite light-absorbing layer is different. And for the purpose of clarifying and simplifying, since the type and dosage of the raw materials added when manufacturing the perovskite light-absorbing layer can be calculated backward from the type of the manufactured perovskite light-absorbing layer, in the following Table 1, only the type of the material of the perovskite light-absorbing layer manufactured in each example and comparative example needs to be listed.

[0210] Example 19 The difference between the manufacturing method of the perovskite solar cell in Example 19 and the manufacturing method of the perovskite solar cell in Example 1 mainly lies in that the phosphorus-containing passivating agent M1 is not added to the perovskite light-absorbing layer. After the manufacturing of the perovskite light-absorbing layer is completed, an isopropanol solution of 0.5 mg / mL in which the phosphorus-containing passivating agent M1 is dissolved is spin-coated on the surface of the perovskite light-absorbing layer at a rotation speed of 3000 rpm to manufacture a passivation layer with a thickness of 5 nm.

[0211] Example 20 The difference between the manufacturing method of the perovskite solar cell in Example 20 and the manufacturing method of the perovskite solar cell in Example 1 mainly lies in that the phosphorus-containing passivating agent M1 is not added to the perovskite light-absorbing layer. After the manufacturing of the hole transport layer is completed, an isopropanol solution of 0.5 mg / mL in which the phosphorus-containing passivating agent M1 is dissolved is spin-coated on the surface of the hole transport layer at a rotation speed of 3000 rpm to manufacture a passivation layer with a thickness of 5 nm.

[0212] Examples 25-26 The difference between the perovskite solar cell manufacturing method in Examples 25-26 and the perovskite solar cell manufacturing method in Example 19 lies in the thickness of the passivation layer. For specific details, please refer to Table 1.

[0213] Comparative Example 1 The difference between Comparative Example 1 and Example 21 is that a phosphorus-containing passivating agent is not added; otherwise, they are the same. See Table 1 for specific details.

[0214] Comparative Example 2 The difference between Comparative Example 2 and Example 21 is that a passivator X having the structure described below is used instead of the phosphorus-containing passivator M1; otherwise, they are the same. See Table 1 for specific details.

[0215] [ka]

[0216] Comparative Example 3 The difference between Comparative Example 3 and Example 1 is that a passivator Y having the structure described below is used instead of the phosphorus-containing passivator M1; otherwise, both are the same. See Table 1 for specific details.

[0217] [ka]

[0218] The parameter tests for each of the above examples and comparative examples are shown in Table 1.

[0219] [Table 1] JPEG2026511719000039.jpg242150JPEG2026511719000040.jpg242150JPEG20265117190 00041.jpg242152JPEG2026511719000042.jpg242152JPEG2026511719000043.jpg242134

[0220] Here, n1 represents the mass ratio of the phosphorus-containing passivator in the perovskite absorption layer, BCP represents 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline, and PC 61 BM represents [6,6]-phenyl C61 methyl butyrate, FTO represents fluorine-doped tin dioxide, where the fluorine doping amount is 5% atomic percentage, M1 passivation means that a passivation layer is produced on the surface of the perovskite absorption layer after the production of the perovskite absorption layer is complete, and M1 passivation means that a passivation layer is produced on the surface of the hole transport layer after the production of the hole transport layer is complete.

[0221] It should be explained that the thicknesses of the hole transport layer, electron transport layer, perovskite absorption layer, passivation layer, blocking layer, and electrode layer in each of the above examples and comparative examples were measured using an atomic force microscope.

[0222] 3. Performance testing of perovskite solar cells Photoelectric conversion efficiency test Using a solar power simulator manufactured by Enlitech, tests were conducted in accordance with the national standard IEC61215. The light intensity was corrected using crystalline silicon solar cells to make the sunlight intensity the same, setting the AM to 1.5. Perovskite solar cells in each of the above examples and comparative examples were connected to a digital source meter, and the photoelectric conversion efficiency was measured on the 3rd and 30th day under light irradiation. The results are shown in Table 2.

[0223] [Table 2]

[0224] As can be seen from the comparison of the results between Examples 1-26 and Comparative Examples 1-3 in Table 2, adding the phosphorus-containing passivating agent of this application when manufacturing perovskite solar cells can improve the photoelectric conversion efficiency and stability of perovskite solar cells.

[0225] The difference between Example 1 and Examples 21-24 lies in the mass ratio of the phosphorus-containing passivator in the perovskite absorption layer. As can be seen from the results of Examples 1 and 21-24, when the additive content of M1 in the perovskite layer is about 0.1%, the efficiency and stability of the perovskite battery device are superior.

[0226] The difference between Example 19 and Examples 25-26 lies in the thickness of the passivation layer. As can be seen from the results of Examples 19 and 25-26, when M1 forms a layer alone at the upper interface of the perovskite layer with a thickness of approximately 5 nm, the efficiency and stability of the perovskite battery device are superior.

[0227] Each of the technical features of the embodiments described above can be combined in any way, and for the sake of brevity, not all possible combinations of the technical features of the embodiments described above have been explained. However, as long as these combinations of technical features are inconsistent, they should be considered to fall within the scope described herein.

[0228] The embodiments described above are merely examples of some of the embodiments of this application, and although the descriptions are relatively specific and detailed, they should not be understood as limiting the scope of the patent of the invention. It should be noted that those skilled in the art can make some further modifications and improvements without departing from the spirit of this application, and all of these fall within the scope of protection of this application. Therefore, the scope of protection of the patent of this application should be based on the attached claims, and the specification and drawings can be used to illustrate the content of the claims.

Claims

1. A phosphorus-containing passivating agent comprising an ionic compound containing a cationic group, wherein the cationic group has the structure shown in the following formula (I), A-L-B (I) Here, A represents an organophosphorus group having a lone pair of electrons, B represents a positively charged organophosphorus base, and L represents a linking group between the organophosphorus group and the organophosphorus base, wherein this is a phosphorus-containing passivating agent.

2. The phosphorus-containing passivator according to claim 1, wherein the ionic compound further comprises an anionic group, the anionic group comprising one or more of a halogen anion, a pseudohalogen anion, a tetrafluoroborate ion, a hexafluorophosphate ion, and a dimethanesulfonamide ion.

3. The phosphorus-containing passivating agent according to claim 1 or 2, wherein L comprises one or more of substituted or unsubstituted alkylene groups, substituted or unsubstituted cycloalkylene groups, and substituted or unsubstituted arylene groups.

4. The phosphorus-containing passivating agent has the structure shown in the following formula (II): 【Chemistry 1】 Here, R １ , R ２ , R ３ , R ４ , R ５ It comprises one of the following: a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, and a substituted or unsubstituted aryl group. L contains one of the following: a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, or a substituted or unsubstituted arylene group. X contains one of either a halogen anion or a halogen-containing anionic group. A phosphorus-containing passivating agent according to any one of claims 1 to 3, wherein 1 ≤ n1 ≤ 4, 1 ≤ n2 ≤ 10, and 1 ≤ n3 ≤ 4, and n1, n2, and n3 are integers.

5. The above R １ 、the above R ２ 、the above R ３ 、the above R ４ 、the above R ５ includes any one of an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 1 to 10 carbon atoms, a phenyl group, and a substituted phenyl group, and the substituent of the substituted phenyl group includes one or more of halogen, an alkyl group, a cycloalkyl group, an alkoxy group, an alkylthio group, an alkylsilyl group, and an alkoxysilyl group. The phosphorus-containing passivator according to claim 4, wherein optionally, the substituents of the substituted phenyl group include one or more of halogens, C1-C10 alkyl groups, C1-C10 cycloalkyl groups, C1-C10 alkoxy groups, C1-C10 alkylthio groups, C1-C10 alkylsilyl groups, and C1-C10 alkoxysilyl groups.

6. The aforementioned R １ , the R ２ It contains one of the following: a cycloalkyl group having 1 to 10 carbon atoms and a phenyl group. Optionally, R １ , the R ２ The phosphorus-containing passivating agent according to claim 4 or 5, wherein it also contains one of a cycloalkyl group having 1 to 10 carbon atoms and a phenyl group.

7. The aforementioned R ３ , the R ４ , the R ５ It contains one of the alkyl groups having 1 to 10 carbon atoms. Optionally, R ３ , the R ４ , the R ５ The phosphorus-containing passivating agent according to any one of claims 4 to 6, wherein the phosphorus-containing passivating agent also contains one of any alkyl groups having 1 to 10 carbon atoms.

8. The L comprises one of the following: an alkylene group having 1 to 10 carbon atoms, a cycloalkylene group having 1 to 10 carbon atoms, a phenylene group, and a substituted phenylene group, wherein the substituents of the substituted phenylene group comprise one or more of the following: halogen, alkyl group, cycloalkyl group, alkoxy group, alkylthio group, alkylsilyl group, and alkoxysilyl group. The phosphorus-containing passivating agent according to any one of claims 1 to 7, wherein optionally, the substituents on the substituted phenylene group include one or more of halogens, C1-C10 alkyl groups, C1-C10 cycloalkyl groups, C1-C10 alkoxy groups, C1-C10 alkylthio groups, C1-C10 alkylsilyl groups, and C1-C10 alkoxysilyl groups.

9. The phosphorus-containing passivating agent according to any one of claims 1 to 8, wherein L comprises one alkylene group having 1 to 10 carbon atoms.

10. The phosphorus-containing passivating agent according to any one of claims 4 to 9, wherein X comprises one of iodide ions and boron tetrafluoride ions.

11. The phosphorus-containing passivator is 【Chemistry 2】 A phosphorus-containing passivating agent according to any one of claims 1 to 10, comprising any one of the structural formulas shown above.

12. A perovskite solar cell comprising a phosphorus-containing passivating agent according to any one of claims 1 to 11.

13. The perovskite solar cell comprises a perovskite light-absorbing layer containing the phosphorus-containing passivator, The perovskite solar cell according to claim 12, wherein the mass ratio of the phosphorus-containing passivator in the perovskite absorption layer is optionally 0.01% to 1%, and optionally 0.05% to 0.5%.

14. The perovskite solar cell includes a perovskite absorption layer and a passivation layer that are stacked and installed, the passivation layer being located on the light-receiving or light-emitting side of the perovskite absorption layer, and the passivation layer containing the phosphorus-containing passivating agent. The perovskite solar cell according to claim 12, wherein the thickness of the passivation layer is optionally 0.1 nm to 10 nm, and optionally 1 nm to 10 nm.

15. The perovskite absorption layer has a molecular formula of ABX ３ Or A ２ CDX ６ It contains an active material, Selectively, the above, with molecular formula ABX ３ Or A ２ CDX ６ The active material is, (1) A comprises one or more organic cations and inorganic cations, and optionally A comprises a monovalent amidino cation, a monovalent amino cation and Cs ＋ Including one or more of the following, (2) B comprises one or more organic cations and inorganic cations, and optionally B is Pb ２＋ and Sn ２＋ Including one or more of the following, (3) C comprises one or more organic cations and inorganic cations, and optionally C is Ag ＋ Including, (4) D comprises one or more organic cations and inorganic cations, and optionally, D is Bi ３＋ Sb ３＋ , and In ３＋ Including one or more of the following, (5) X includes one or more organic anions and inorganic anions, and optionally X is Br － and I － A perovskite solar cell according to claim 13 or 14, having at least one of the features of including one or more of the following.

16. The perovskite absorption layer is (1) The thickness of the perovskite absorption layer is 100 nm to 1000 nm, (2) The perovskite solar cell according to any one of claims 13 to 15, having at least one of the features of the perovskite absorption layer having a bandgap width of 1.2 eV to 2.3 eV.

17. The perovskite solar cell further includes an electron transport layer located on the light-emitting side of the perovskite absorption layer, a blocking layer, and an electrode layer, wherein the electron transport layer, the blocking layer, and the electrode layer are stacked in order, and the electron transport layer is closer to the perovskite absorption layer. Optionally, the material of the blocking layer may be 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline, SnO ２ , comprising one or more of ZnO and cerium-containing oxides, The perovskite solar cell according to any one of claims 13 to 16, wherein the thickness of the blocking layer is optionally 0.5 nm to 20 nm.

18. A photovoltaic module comprising a perovskite solar cell according to any one of claims 12 to 17.

19. A solar power generation system comprising the solar power generation module described in claim 18.

20. A power consumption device comprising a perovskite solar cell according to any one of claims 12 to 17.

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