Light-emitting devices, display devices, and backlight devices

Abstract

The present invention provides a light-emitting device, a display device, and a backlight device. The light-emitting device includes a light-emitting subunit, the light-emitting subunit including a first semiconductor layer, a second semiconductor layer, a light-emitting layer, and a protective layer. The second semiconductor layer is laminated on the first semiconductor layer and is made of a different material from the first semiconductor layer, the light-emitting layer is located between the first semiconductor layer and the second semiconductor layer and is configured to emit light, the protective layer is located on the side of the first semiconductor layer away from the second semiconductor layer, the first semiconductor layer includes a central region and an edge region surrounding the central region, the protective layer covers at least the central region, the central region includes a first working area, and when the light-emitting device is transported by an ejector pin, the ejector pin is located in the first working area.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a light-emitting device, a display device, and a backlight device.

Background Art

[0002] LEDs (light-emitting diodes) have advantages such as low cost, high luminous efficiency, energy saving, and environmental protection, and are widely used in scenes such as lighting, visible light communication, and light-emitting displays.

[0003] Miniaturization and micromation are one of the development directions of LEDs. Since LEDs can be miniaturized to form arrays with millimeter intervals or even micron intervals, achieving ultra-high resolution, they can be more widely used in fields such as information display.

[0004] Currently, small-sized flip-chip type LED chips are widely used in backlight displays and RGB display devices. All currently commercially available display products have either single light-emitting units or flip-chip type LED chips in which two light-emitting units are connected in series, and thousands or tens of thousands of them are mounted in reverse on a circuit board. The smaller the chip size, the closer the distance between chips, and the higher the final display contrast.

[0005] When thousands or tens of thousands of flip-chip type LED chips are transferred to a circuit board and further mounted to form a display panel, the ejector pins of the transfer device need to act on the central region of the front surface of the flip-chip type LED chip to lift and transfer the chip, which requires higher technology and cost. Currently, there are problems such as low transfer success rate and low alignment accuracy of the ejector pins. Furthermore, the ejector pins are highly likely to damage the top structure of the LED chip, thereby affecting the luminous efficiency of the LED chip or damaging the LED chip.

Summary of the Invention

[0006] At least one embodiment of the present disclosure provides a light-emitting device comprising a light-emitting subunit, the light-emitting subunit comprising a first semiconductor layer, a second semiconductor layer, a light-emitting layer, and a protective layer. The second semiconductor layer is laminated on the first semiconductor layer and is made of a different material from the first semiconductor layer, the light-emitting layer is located between the first semiconductor layer and the second semiconductor layer and is configured to emit light, the protective layer is located on the side of the first semiconductor layer away from the second semiconductor layer, the first semiconductor layer comprises a central region and an edge region surrounding the central region, the protective layer at least covers the central region, the central region comprises a first working area, and when the light-emitting device is transported by an ejector pin, the ejector pin is in the first working area action do.

[0007] For example, in a light-emitting device according to at least one embodiment of the present disclosure, the first semiconductor layer has an upper surface separated from the second semiconductor layer, and the area of ​​the portion of the upper surface of the first semiconductor layer covered by the protective layer is in ratio to 1 / 2 or more of the area of ​​the upper surface of the second semiconductor layer.

[0008] For example, in a light-emitting device according to at least one embodiment of the present disclosure, the protective layer covers the entire first semiconductor layer.

[0009] For example, a light-emitting device according to at least one embodiment of the present disclosure further includes a current-diffusing layer laminated on the first semiconductor layer and the second semiconductor layer, located on the side of the first semiconductor layer away from the second semiconductor layer, and in contact with at least a portion of the first semiconductor layer to be electrically connected to each other, wherein the current-diffusing layer includes an ejector pin action portion located in the central region, and the protective layer at least covers the ejector pin action portion of the current-diffusing layer.

[0010] For example, in a light-emitting device according to at least one embodiment of the present disclosure, the protective layer covers the entire current diffusion layer.

[0011] For example, a light-emitting device according to at least one embodiment of the present disclosure further includes a first insulating layer, the protective layer being floating, and the floating protective layer and the first semiconductor layer are separated by the first insulating layer and insulated from each other.

[0012] For example, in a light-emitting device according to at least one embodiment of the present disclosure, the first insulating layer encloses the entire floating protective layer and is covered by and in contact with the lower surface of the floating reflective layer near the first semiconductor layer, the upper surface facing the lower surface, and the side surface intersecting both the upper and lower surfaces of the floating reflective layer.

[0013] For example, a light-emitting device according to at least one embodiment of the present disclosure includes a first bridge electrode, a first electrode, and a second electrode. The first bridge electrode is located on the side of the first semiconductor layer away from the second semiconductor layer and is insulated from the second semiconductor layer via an interlayer insulating layer, the first bridge is electrically connected to the first semiconductor layer by the electrode, the second electrode is electrically connected to the second semiconductor layer, and the first bridge electrode also functions as the protective layer, and the front Record number 1. The edge of the first bridge electrode is not present within the operating area.

[0014] For example, in a light-emitting device according to at least one embodiment of the present disclosure, the front of the first bridge electrode Record number 1. The portion covering the working area does not cover the edges of the interlayer insulating layer and has a flat surface.

[0015] For example, a light-emitting device according to at least one embodiment of the present disclosure further includes a first electrode and a second electrode. The first electrode is electrically connected to the first semiconductor layer, and the second electrode is electrically connected to the second semiconductor layer, and if the direction in which the first semiconductor layer and the second semiconductor layer are stacked relative to each other is defined as the perpendicular direction, then the first electrode is perpendicular to the perpendicular direction. aspect The orthographic projection in front of the first semiconductor layer markingsThe light-emitting device further comprises a current-diffusing layer laminated on the first and second semiconductor layers, located on the side of the first semiconductor layer away from the second semiconductor layer, and in contact with at least a portion of the first semiconductor layer to be electrically connected to the first semiconductor layer, wherein the current-diffusing layer comprises an ejector pin action portion located in the central region, the surface of the current-diffusing layer away from the first semiconductor layer is a flat surface, and the current-diffusing layer also functions as the protective layer, or the light-emitting device further comprises a first insulating layer, the protective layer being a floating reflective layer, the floating reflective layer and the first semiconductor layer being insulated from each other by the first insulating layer, and the protective layer at least covering the ejector pin action portion of the current-diffusing layer.

[0016] For example, a light-emitting device according to at least one embodiment of the present disclosure further includes a first bridge electrode, a first electrode, and a second electrode. The first bridge electrode is located on the side of the first semiconductor layer away from the second semiconductor layer and is insulated from the second semiconductor layer via an interlayer insulating layer, the first electrode is electrically connected to the first semiconductor layer by the first bridge electrode, and the second electrode is electrically connected to the second semiconductor layer, and if the direction in which the first semiconductor layer and the second semiconductor layer are stacked relative to each other is considered perpendicular, the first bridge electrode is located on the side of the first semiconductor layer away from the second semiconductor layer and perpendicular to the said perpendicular direction of the first bridge electrode. aspect The orthographic projection in front of the first semiconductor layer markings It overlaps with a portion of the orthographic projection and is in front of the first working area of ​​the central region. markings It does not overlap with the orthographic projection.

[0017] For example, in a light-emitting device according to at least one embodiment of the present disclosure, the orthographic projection of the first bridge electrode extends laterally toward the orthographic projection of the first semiconductor layer until it overlaps with it, and the lateral width of the portion of the orthographic projection of the first bridge electrode that overlaps with the orthographic projection of the first semiconductor layer is less than half the lateral width of the first semiconductor layer.

[0018] For example, in a light-emitting device according to at least one embodiment of the present disclosure, when the light-emitting device is transported by the ejector pin, the ejector pin is in the first working area action and in front of the first bridge electrode markings In the orthographic projection, the edge near the first working area includes a recessed portion that is recessed away from the first working area.

[0019] For example, in a light-emitting device according to at least one embodiment of the present disclosure, in front of the first bridge electrode Note The shape of the recess at the edge of the orthographic projection on the surface is the first working area The ejector pin that acts on before markings This is complementary to the shape of the outer contour of the edge opposite the first bridge electrode in the orthographic projection.

[0020] For example, in a light-emitting device according to at least one embodiment of the present disclosure, in front of the first bridge electrode markings The shape of the recess at the edge of the orthographic projection is an arc shape that is recessed away from the first working area.

[0021] For example, in a light-emitting device according to at least one embodiment of the present disclosure, the light-emitting device further includes a plurality of light-emitting subunits, each of which includes a first semiconductor layer and a second semiconductor layer laminated on the first semiconductor layer and made of a different material from the first semiconductor layer, the plurality of light-emitting subunits include a transport light-emitting subunit, and the transport light-emitting subunit further includes the protective layer.

[0022] For example, in a light-emitting device according to at least one embodiment of the present disclosure, the odd-numbered light-emitting sub-units arranged continuously constitute one light-emitting unit, and the light-emitting sub-unit for transfer is located at the middle position of the odd-numbered light-emitting sub-units.

[0023] For example, in a light-emitting device according to at least one embodiment of the present disclosure, the plurality of light-emitting sub-units includes a first light-emitting sub-unit adjacent to the light-emitting sub-unit for transfer. The light-emitting device further includes a second bridge electrode, and the second bridge electrode electrically connects the first semiconductor layer of the light-emitting sub-unit for transfer and the second semiconductor layer of the first light-emitting sub-unit.

[0024] For example, in a light-emitting device according to at least one embodiment of the present disclosure, the second bridge electrode also functions as the protective layer.

[0025] For example, in a light-emitting device according to at least one embodiment of the present disclosure, the plurality of light-emitting sub-units includes a second Sub light-emitting unit and a third light-emitting sub-unit adjacent to each other, and there is a gap between the second Sub light-emitting unit and the third light-emitting sub-unit. and, the Two action areas are located within the gap. When transferring the light-emitting device with the ejector pin, the ejector pin touches the second action area. action The light-emitting device further includes a second bridge electrode, and the second bridge electrode electrically connects the first semiconductor layer of the second Sub light-emitting unit and the second semiconductor layer of the third light-emitting sub-unit. When the direction in which the first semiconductor layer and the second semiconductor layer are stacked on each other is the vertical direction, the orthogonal projection of the second bridge electrode in the vertical direction does not overlap with the orthogonal projection of the second action area of the ejector pin. aspect in front of markings does not overlap with the orthogonal projection of the ejector pin's second action area.

[0026] For example, in a light-emitting device according to at least one embodiment of the present disclosure, the second Sub The light-emitting unit and the third light-emitting subunit are arranged in the lateral direction, and the direction perpendicular to the lateral direction in the plane on which the second semiconductor layer extends is the vertical direction, and the second bridge electrode extends in the lateral direction and is located on one side of the second working area in the vertical direction.

[0027] For example, in a light-emitting device according to at least one embodiment of the present disclosure, in front of the second bridge electrode markings In the orthographic projection, the edge near the second area of ​​action includes a recessed portion that is set back from the second area of ​​action.

[0028] For example, in a light-emitting device according to at least one embodiment of the present disclosure, in front of the second bridge electrode markings The recessed portion at the edge near the second working area in the orthographic projection is the second working area The ejector pin acting on Before markings In the orthographic projection, the outer contour and shape of the edge opposite the second bridge electrode are complementary.

[0029] For example, in a light-emitting device according to at least one embodiment of the present disclosure, the first edge of the second semiconductor layer of the second light-emitting subunit that is closer to the third light-emitting subunit in the lateral direction is closer to the spacing than the first edge of the first semiconductor layer of the second light-emitting subunit that is closer to the third light-emitting subunit in the lateral direction, the first edge of the second semiconductor layer of the third light-emitting subunit that is closer to the spacing than the first edge distance of the first semiconductor layer of the third light-emitting subunit that is closer to the second light-emitting subunit in the lateral direction, the first edge of the second semiconductor layer of the second light-emitting subunit includes a recessed portion that is set back away from the third light-emitting subunit, and the first edge of the second semiconductor layer of the third light-emitting subunit includes a recessed portion that is set back away from the second light-emitting subunit.

[0030] For example, in a light-emitting device according to at least one embodiment of the present disclosure, in front of the first semiconductor layer of the second light-emitting subunit markingsOrthographic projection and in front of the first semiconductor layer of the third light-emitting subunit markings In orthographic projection, the opposing edges each include recesses that are recessed away from the aforementioned spacing, and / or in front of the light-emitting layer of the second light-emitting subunit. markings Orthographic projection and in front of the light-emitting layer of the third light-emitting subunit markings In orthographic projection, the opposing edges each include a recessed portion that is set back from the aforementioned interval.

[0031] For example, in a light-emitting device according to at least one embodiment of the present disclosure, the cross-section of the second bridge electrode along the vertical direction includes a first inclined plane, the angle between the first inclined plane and the horizontal direction is 70° or less, and the horizontal direction is perpendicular to the vertical direction.

[0032] For example, in a light-emitting device according to at least one embodiment of the present disclosure, if the direction in which the first semiconductor layer and the second semiconductor layer are stacked relative to each other is defined as the perpendicular direction, then the cross-section of the second semiconductor layer along the perpendicular direction includes a second slope, the angle between the second slope and the horizontal direction is 70° or less, and the horizontal direction is perpendicular to the vertical direction.

[0033] For example, in a light-emitting device according to at least one embodiment of the present disclosure, the light-emitting device is a mini light-emitting diode (Mini LED) or a micro light-emitting diode (Micro LED), the material of the current diffusion layer is a transparent conductive material, the first semiconductor material is a P-type semiconductor material and the second semiconductor material is an N-type semiconductor material, or the first semiconductor material is an N-type semiconductor material and the second semiconductor material is a P-type semiconductor material.

[0034] At least one embodiment of the present disclosure also includes a plurality of light-emitting subunits, each of which provides a light-emitting device comprising a first semiconductor layer, a second semiconductor layer, and a light-emitting layer. The second semiconductor layer is laminated on the first semiconductor layer and is made of a different material from the first semiconductor layer, and the light-emitting layer is located between the first semiconductor layer and the second semiconductor layer and is configured to emit light, and the plurality of light-emitting subunits are adjacent to each other. Sub The light-emitting unit and the third light-emitting subunit are included, and the second Sub A gap exists between the light-emitting unit and the third light-emitting subunit. , the The second working area is located within the aforementioned interval, and when the light-emitting device is moved by the ejector pin, the ejector pin is located in the second working area. action Furthermore, the light-emitting device further includes a second bridge electrode, the second bridge electrode is the second Sub When the first semiconductor layer of the light-emitting unit and the second semiconductor layer of the third light-emitting subunit are electrically connected, and the direction in which the first and second semiconductor layers are stacked relative to each other is defined as perpendicular, the second bridge electrode is perpendicular to the said perpendicular direction. aspect The orthographic projection in front Record number 2. Before the action area markings It does not overlap with the orthographic projection.

[0035] At least one embodiment of the present disclosure also provides a display device including any light-emitting device according to an embodiment of the present disclosure.

[0036] At least one embodiment of the present disclosure also provides a backlighting device comprising any of the light-emitting devices according to the embodiments of the present disclosure.

[0037] At least one embodiment of the present disclosure also provides an electronic device including any backlight device according to an embodiment of the present disclosure. [Brief explanation of the drawing]

[0038] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the drawings of these embodiments will be briefly described below, although it is clear that the drawings in the following description relate only to some embodiments of this disclosure and do not limit the disclosure.

[0039] [Figure 1A] This is a schematic diagram of the planar structure of a light-emitting device according to one embodiment of the present disclosure. [Figure 1B] This is a schematic cross-sectional view along the line A-A' in Figure 1A. [Figure 1C] This is a schematic diagram of a light-emitting device including an odd number of light-emitting subunits according to one embodiment of the present disclosure. [Figure 2A] A schematic diagram of the planar structure of another light-emitting device according to one embodiment of the present disclosure. [Figure 2B] Figure 2A is a schematic cross-sectional view of the light-emitting device shown. [Figure 3A] A schematic diagram of the planar structure of another light-emitting device according to one embodiment of the present disclosure. [Figure 3B] Figure 3A is a schematic cross-sectional view of the light-emitting device shown. [Figure 4A] A schematic diagram of the planar structure of another light-emitting device according to one embodiment of the present disclosure. [Figure 4B] Figure 4A is a schematic cross-sectional view of the light-emitting device shown. [Figure 5A] A schematic diagram of the planar structure of another light-emitting device according to one embodiment of the present disclosure. [Figure 5B] Figure 5A is a schematic cross-sectional view of the light-emitting device shown. [Figure 6A] This is a schematic cross-sectional view of another light-emitting device according to one embodiment of the present disclosure. [Figure 6B] This is a schematic cross-sectional view of another light-emitting device according to one embodiment of the present disclosure. [Figure 7A] A schematic diagram of the planar structure of another light-emitting device according to one embodiment of the present disclosure. [Figure 7B] Figure 7A is a schematic cross-sectional view of the light-emitting device shown. [Figure 8A] A schematic diagram of the planar structure of another light-emitting device according to one embodiment of the present disclosure. [Figure 8B] Figure 8A is a schematic cross-sectional view of the light-emitting device shown. [Figure 9] A schematic diagram of the planar structure of another light-emitting device according to one embodiment of the present disclosure. [Figure 10] This is a schematic planar structure diagram of a light-emitting device including an even number of light-emitting subunits according to one embodiment of the present disclosure. [Figure 11] This is a schematic cross-sectional view along the line D-D' in Figure 10. [Figure 12] This is a schematic block diagram of a display device according to one embodiment of the present disclosure. [Figure 13] A schematic diagram of a backlight device according to one embodiment of the present disclosure. [Modes for carrying out the invention]

[0040] To further clarify the objectives, technical solutions, and advantages of the embodiments of this disclosure, the technical solutions of the embodiments of this disclosure will be described clearly and completely below with reference to the drawings of the embodiments of this disclosure. The embodiments described below are a selection of, but not all, embodiments of this disclosure. All other embodiments that a person skilled in the art could obtain without requiring any creative effort based on the embodiments of this disclosure described herein are within the scope of this disclosure.

[0041] Unless otherwise defined, technical or scientific terms used herein have their ordinary meanings as understood by those skilled in the art. The terms “first,” “second,” and similar terms used herein do not imply any order, quantity, or importance, but are used solely to distinguish different components. Similarly, similar terms such as “equip” or “include” mean that the element or article currently preceding the term encompasses the elements or articles and their equivalents listed after the term, and do not exclude other elements or articles. Similar terms such as “connected” or “linked” are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. “Up,” “down,” “left,” “right,” etc., are used solely to describe relative positions, and if the absolute position of the object being described changes, the relative position may also change.

[0042] The terms “parallel,” “perpendicular,” and “same” as used in this disclosure all include, in a strict sense, the characteristics of “parallel,” “perpendicular,” and “same,” and also include errors such as “substantially parallel,” “substantially overlapping,” and “substantially identical,” meaning that they are within an acceptable range of deviation for a particular value as determined by a person skilled in the art, taking into account errors related to measurement or the measurement of a particular quantity (e.g., limitations of the measurement system). For example, “substantially,” unless otherwise specified, may mean within one or more standard deviations, and may mean within a deviation of 10% or 5% from that value.

[0043] In this disclosure, "floating" means that a floating structure is not connected to any other conductive structure and does not transmit electrical signals.

[0044] In the process of lifting and transporting a flip-chip LED light-emitting device by using the ejector pins of the transport equipment to act on the central area of ​​the front of the device, there is a high possibility that the top structure of the LED light-emitting device will be damaged by the ejector pins, affecting the LED light-emitting device and causing abnormal operation. For example, the insulating layer may rupture, causing electrical leakage and affecting the luminous efficiency, the bridge electrode may break, reducing the signal transmission efficiency, and the electrode that controls light emission near the top may be damaged. The area where the ejector pins are located during the transport process is called the ejector pin action area, and in particular, if the ejector pin action area is not flat, there is a particularly high possibility that the film layer near the top of the flip-chip LED chip will be damaged, causing the abnormal operation of the LED light-emitting device as described above. Therefore, in the process of transporting LED light-emitting devices with ejector pins, it is extremely important to prevent damage to the film layer in the ejector pin action area in order to improve the success rate of transport and ensure the normal operation of the LED light-emitting device.

[0045] At least one embodiment of the present disclosure provides a light-emitting device comprising a light-emitting subunit, the light-emitting subunit comprising a first semiconductor layer, a second semiconductor layer, a light-emitting layer, and a protective layer. The second semiconductor layer is laminated on the first semiconductor layer and is made of a different material from the first semiconductor layer, the light-emitting layer is located between the first semiconductor layer and the second semiconductor layer and is configured to emit light, the protective layer is located on the side of the first semiconductor layer away from the second semiconductor layer, the first semiconductor layer comprises a central region and an edge region surrounding the central region, the protective layer at least covers the central region, the central region comprises a first working area, and when the light-emitting device is transported by an ejector pin, the ejector pin is located in the first working area.

[0046] At least one embodiment of the present disclosure also provides a display device that includes any light-emitting device according to an embodiment of the present disclosure.

[0047] At least one embodiment of the present disclosure also provides a backlighting device comprising any of the light-emitting devices according to the embodiments of the present disclosure.

[0048] At least one embodiment of the present disclosure also provides an electronic device including any backlight device according to an embodiment of the present disclosure.

[0049] Illustratively, Figure 1A is a schematic planar structure of a light-emitting device according to one embodiment of the present disclosure, and Figure 1B is a schematic cross-sectional view along the line A-A' in Figure 1A. Referring to Figures 1A to 1B, the light-emitting device 10 includes a light-emitting subunit U, which includes a first semiconductor layer 1a, a second semiconductor layer 1b, a light-emitting layer 1c, and a protective layer 3. The second semiconductor layer 1b is laminated on the first semiconductor layer 1a and is made of a different material from the first semiconductor layer 1a. The light-emitting layer 1c is located between the first semiconductor layer 1a and the second semiconductor layer 1b and is configured to emit light. The protective layer 3 is located on the side of the first semiconductor layer 1a away from the second semiconductor layer 1b. The first semiconductor layer 1a includes a central region CA and an edge region PA surrounding the central region CA. The protective layer 3 covers at least the central region CA, which includes a first working area 1A. When the light-emitting device 10 is transferred by the ejector pin, the ejector pin is located in the first working area 1A. In Figure 1A, the dotted circle in the central region represents the first working area 1A. Here, taking the case where the planar shape of the first working area is circular as an example, for example, the planar shape of the first working area is also the planar shape of the surface of the ejector pin that contacts the light-emitting device. Of course, the planar shape of the first working area is not limited to a circle and may be any shape.

[0050] In the process of lifting and transporting the light-emitting device 10 by using an ejector pin of a transport device to act on the central region CA on the front of the light-emitting device 10 according to an embodiment of the present disclosure, the ejector pin is located on the side of the protective layer 3 away from the first semiconductor layer 1a, i.e., the front refers to the side of the light-emitting device 10 where the protective layer and the first semiconductor layer are located. Because the protective layer 3 is closer to the ejector pin, covers the central region CA, and covers the first working area 1A where the ejector pin is located when the light-emitting device 10 transports the ejector pin, when a force is applied to the structure of the first working area 1A by the ejector pin, the protective layer 3 can protect the film layer below it, which includes the first semiconductor layer 1a. These film layers are protected from damage and rupture by the ejector pin, thereby avoiding electrical leakage problems in the light-emitting device due to the rupture of these film layers, affecting the luminous efficiency of the light-emitting device, and preventing malfunctions such as causing bridge electrode rupture and reducing signal transmission efficiency.

[0051] Furthermore, the first action area is not a single region of the first semiconductor layer 1a, but rather a region applicable to multiple film layers of the light-emitting device. In other words, all of the multiple film layers include portions located in the first action area, and the ejector pin applies force to any portion of the multiple film layers located in the first action area.

[0052] For example, the light-emitting device 10 further includes a substrate 101, and a first semiconductor layer 1a and a second semiconductor layer 1b are laminated on the main surface of the substrate 101. For example, the substrate 101 may be a sapphire substrate, a GaAs substrate, a GaN substrate, a SiC substrate, a Si substrate, or a glass substrate, a quartz substrate, etc. In the embodiments of this disclosure, the material of the substrate is not limited and can be selected as needed by those skilled in the art.

[0053] The meaning of "cover" here is as follows: For example, for A to cover B means that A is located on the side of B that is closer to the ejector pin, that is, A is located on the side of B that is further away from the substrate 101, and B surface The orthographic projection is A surfaceThis means that it lies within the orthographic projection. For example, if the direction in which the first semiconductor layer and the second semiconductor layer are stacked relative to each other is defined as the perpendicular direction, then the above surface This refers to a plane perpendicular to the vertical direction, that is, the vertical direction is perpendicular to the main surface of the substrate 101, and the above surface It is substantially parallel to the main surface of the substrate 101.

[0054] For example, the light-emitting device 10 is a mini light-emitting diode (Mini LED) or a micro light-emitting diode (Micro LED). For example, the dimensions of a mini light-emitting diode are approximately 100 to 300 μm. The dimensions of a micro light-emitting diode are 100 μm or less. For example, the first semiconductor material is a P-type semiconductor material and the second semiconductor material is an N-type semiconductor material, or the first semiconductor material is an N-type semiconductor material and the second semiconductor material is a P-type semiconductor material, and electrons and holes are driven by an electric current and coupled in the light-emitting layer 1c, and electrical energy is converted into light energy for light emission.

[0055] Referring to Figures 1A-1B, for example, the protective layer 3 covers a portion of the upper surface of the first semiconductor layer 1a. For example, the first semiconductor layer 1a has an upper surface that is separated from the second semiconductor layer 1b, and the area of ​​the portion of the upper surface of the first semiconductor layer 1a covered by the protective layer 3 is at least half the area of ​​the upper surface of the second semiconductor layer 1b, thereby leaving sufficient space in the working area 1A of the ejector pin, and the ejector pin is protected by the protective layer 3. surface It may act on a region within the orthographic projection, thereby ensuring that the protective layer 3 sufficiently covers the area of ​​action of the ejector pin.

[0056] Referring to Figures 1A to 1B, for example, the light-emitting device 10 further includes a first electrode 01, a second electrode 02, and a first insulating layer IL1. The first electrode 01 is electrically connected to the first semiconductor layer 1a by passing through a first via V1 of the first insulating layer IL1, and the second electrode 02 is electrically connected to the second semiconductor layer 1b by passing through a second via V2 of the first insulating layer IL1. For example, the light-emitting device 10 further includes a first bridge electrode 4, the first bridge electrode 4 located on the side of the first semiconductor layer 1a away from the second semiconductor layer 1b and insulated from the second semiconductor layer 1b via an interlayer insulating layer IL0, the first electrode 01 is electrically connected to the first bridge electrode 4 via a first via V1, the first bridge electrode 4 is electrically connected to the first semiconductor layer 1a, for example, the first bridge electrode 4 is directly abutted against the side of the first semiconductor layer 1a away from the substrate 101, thereby the first electrode 01 is electrically connected to the first semiconductor layer 1a by the first bridge electrode 4.

[0057] For example, the first electrode 01 and the second electrode 02 are arranged in the lateral direction, and the vertical direction is perpendicular to the lateral direction. For example, in the lateral and vertical directions, the length of the portion of the first semiconductor layer 1a covered by the protective layer 3 is greater than or equal to the total length of the first semiconductor layer 1a, thereby leaving sufficient space in the working area 1A of the ejector pin, and the ejector pin is covered by the protective layer 3 surface It may act on a region within the orthographic projection, thereby ensuring that the protective layer 3 sufficiently covers the area of ​​action of the ejector pin.

[0058] Figure 2A is a schematic planar structure of another light-emitting device according to one embodiment of the present disclosure, and Figure 2B is a schematic cross-sectional view of the light-emitting device shown in Figure 2A. The light-emitting devices shown in Figures 2A to 2B differ from the light-emitting devices shown in Figures 1A to 1B in the following respects. Referring to Figures 2A to 2B, the protective layer 3 covers the entire first semiconductor layer 1a, that is, the first semiconductor layer 1a surface Orthographic projection in protective layer 3 surface It is located within the orthographic projection, and this is the first semiconductor layer 1a surface The area of ​​the orthographic projection is the protective layer 3 surfaceThis includes the case where the area is equal to the orthographic projection area, and also the protective layer 3 surface The area of ​​the orthographic projection is the first semiconductor layer 1a surface This includes cases where the area is larger than the orthographic area. The other structures and corresponding technical effects of the light-emitting devices shown in Figures 2A-2B are all the same as those of the light-emitting devices shown in Figures 1A-1B, so you can refer to the description of the light-emitting devices shown in Figures 1A-1B.

[0059] Referring again to Figures 1A and 1B, the light-emitting device 10 is provided stacked perpendicularly to the first semiconductor layer 1a and the second semiconductor layer 1b, and further includes a current-diffusing layer 2 located on the side of the first semiconductor layer 1a away from the second semiconductor layer 1b, and in contact with at least a portion of the first semiconductor layer 1a to electrically connect with each other, the current-diffusing layer 2 includes an ejector pin operating portion located in the central region CA, and the protective layer 3 covers at least the ejector pin operating portion of the current-diffusing layer 2, thereby protecting the current-diffusing layer 2 from damage by the ejector pin during the transfer process of the light-emitting device 10 and ensuring the normal conduction of electrical signals.

[0060] For example, the material of the current diffusion layer 2 may be a transparent conductive material that can transmit light emitted by the light-emitting layer 1c. The transparent conductive material may be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide, aluminum zinc oxide, gallium zinc oxide, etc., but is not limited to the types listed above, and the embodiments of this disclosure do not limit the type of transparent conductive material.

[0061] For example, protective layer 3 covers the entire current diffusion layer 2, that is, current diffusion layer 2 surface Orthographic projection in protective layer 3 surface It is located within the orthographic projection, which is the current diffusion layer 2 surface The area of ​​the orthographic projection is the protective layer 3 surface This includes the case where the area is equal to the orthographic projection area, and also the protective layer 3 surface The area of ​​the orthographic projection is the current diffusion layer 2 surface This includes cases where the area is larger than the area of ​​the orthographic projection.

[0062] Referring to Figures 1A-1B, for example, protective layer 3 is floating, meaning that protective layer 3 is not connected to other conductive structures and does not transmit electrical signals. For example, protective layer 3 may be made of a non-conductive material or a conductive material. For example, protective layer 3 does not transmit light.

[0063] For example, protective layer 3 is a floating reflective layer, and the floating reflective layer and the first semiconductor layer 1a are separated by the first insulating layer IL1 and insulated from each other. Light is emitted from the side where the substrate 101 is located, and the fact that protective layer 3 is a reflective layer is advantageous in improving the reflectivity of light from the light-emitting layer 1c and improving the luminescence of the light-emitting device 10. For example, protective layer 3 is a floating metal layer, and the metal layer has a relatively high reflectivity. For example, a white metal layer is used to maximize the reflectivity of light. For example, the material of protective layer 3 is aluminum, which is lightweight, thin, and has a relatively high reflectivity, but of course, it is not limited to aluminum. When the floating metal layer functions as a protective layer, it can protect film layers such as the first semiconductor layer and the current diffusion layer from damage by the ejector pin as described above, and can also improve the light extraction efficiency. Furthermore, because the metal layer is floating, it can prevent signal transmission by the metal layer and prevent the metal layer from interfering with the normal transmission of signals in the light-emitting device.

[0064] For example, referring to Figure 1A, the central region CA of the first semiconductor layer 1a is at the geometric center of the planar shape of the first semiconductor layer 1a, and the planar shape of the central region CA of the first semiconductor layer 1a substantially coincides with the geometric center of the protective layer 3. For example, the planar shape of the first semiconductor layer 1a is the same as the planar shape of the protective layer 3. Thus, the degree of structural symmetry is relatively high. Here, it is illustrated that both the planar shape of the first semiconductor layer 1a and the planar shape of the protective layer 3 are rectangles (right-angled rectangles and rounded-corner rectangles are collectively referred to as rectangles). The geometric center of a rectangle is its diagonal foci. Of course, the planar shapes of the first semiconductor layer 1a and the planar shape of the protective layer 3 can both be arbitrary shapes, such as regular figures, circles, ellipses, polygons, etc., or irregular figures, and may be designed as needed. If the planar shape of the first semiconductor layer is irregular, the protective layer only needs to cover the substantial intermediate region of the first semiconductor layer.

[0065] Referring to Figure 1B, for example, the first insulating layer IL1 encloses the entire floating protective layer 3 and is covered and in contact with the lower surface of the floating protective layer 3 near the first semiconductor layer 1a, the upper surface facing the lower surface, and the sides intersecting both the upper and lower surfaces of the floating protective layer 3, thereby ensuring that the floating protective layer 3 is insulated from other structures.

[0066] For example, Figures 1A and 1B show the case of a light-emitting device having a single light-emitting subunit, and in some embodiments, for example, the light-emitting device may include a plurality of light-emitting subunits. Figure 1C is a schematic diagram of a light-emitting device including an odd number of light-emitting subunits according to one embodiment of the present disclosure. Referring to 1C, for example, the light-emitting device 10 includes a plurality of light-emitting subunits, each light-emitting subunit including a first semiconductor layer 1a and a second semiconductor layer 1b laminated on the first semiconductor layer 1a and made of a different material from the first semiconductor layer 1a, and a plurality of continuously arranged light-emitting subunits constitute a single light-emitting unit, and the plurality of light-emitting subunits of the light-emitting unit include a transport light-emitting subunit, and the transport light-emitting subunit further includes the protective layer, for example, protective layer 3. In a single light-emitting unit, only the transport light-emitting subunit includes the protective layer, and other light-emitting subunits other than the transport light-emitting subunit do not have the protective layer. When the light-emitting device is transferred using the ejector pin, the ejector pin acts on the transfer light-emitting subunit to transfer multiple light-emitting subunits simultaneously.

[0067] For example, an odd number of light-emitting subunits arranged in a continuous sequence constitute one light-emitting unit. Referring to Figure 1C, here we take three continuously arranged light-emitting subunits as an example: the first light-emitting subunit A, the second light-emitting subunit B, and the third light-emitting subunit C constitute one light-emitting unit, and the transport light-emitting subunit is located in the middle of the odd number of light-emitting subunits. That is, the intermediate second light-emitting subunit B functions as the transport light-emitting subunit, thereby balancing the light-emitting device during transport and improving the success rate of transporting the light-emitting device.

[0068] Figure 3A is a schematic planar structure of another light-emitting device according to one embodiment of the present disclosure, and Figure 3B is a schematic cross-sectional view of the light-emitting device shown in Figure 3A. The light-emitting devices shown in Figures 3A to 3B differ from the light-emitting devices shown in Figures 1A to 1B in the following ways.

[0069] Referring to Figures 3A-3B, for example, the light-emitting device 10 further includes a first bridge electrode 4, which is located on the side of the first semiconductor layer 1a away from the second semiconductor layer 1b and is insulated from the second semiconductor layer 1b via an interlayer insulating layer IL0. The first electrode 01 is electrically connected to the first semiconductor layer 1a by the first bridge electrode 4, and the second electrode 02 is electrically connected to the second semiconductor layer 1b, and the first bridge electrode 4 also functions as a protective layer. In this embodiment, the first bridge electrode 4 functions as a protective layer, that is, the first bridge electrode 4 covers at least the central region CA and the first working area 1A, for example, the entire first working area 1A, thereby protecting all film layers in the region in contact with the ejector pins. For example, the first bridge electrode 4 covers a portion of the upper surface of the first semiconductor layer 1a, and the area of ​​the portion of the upper surface of the first semiconductor layer 1a covered by the first bridge electrode 4 is equal to or greater than half of the total area of ​​the upper surface of the first semiconductor layer 1a. For example, the first bridge electrode 4 covers the entire first semiconductor layer 1a. As a result, the first bridge electrode 4 is larger compared to the light-emitting device in Figures 1A-1B. For example, because the first bridge electrode 4 covers the first working area 1A, the edge of the first bridge electrode 4 does not exist within the first working area 1A of the ejector pin. The pressure from the ejector pin is relatively large at the edge, causing serious damage. Therefore, in the process of transporting the light-emitting device 10 with the ejector pin shown in Figure 3A, the ejector pin acting on the first working area 1A does not cause significant damage to the first bridge electrode 4. This reduces the damage that the ejector pin inflicts on the first bridge electrode 4 and the film layer below the first bridge electrode 4 during the transport process of the light-emitting device 10, for example, reducing damage to the current diffusion layer 2 and the first semiconductor layer 1a.

[0070] The first bridge electrode 4 electrically connects the first electrode 01 of a single light-emitting subunit to the first semiconductor layer 1a. The second bridge electrode, shown below, connects adjacent light-emitting subunits in series.

[0071] The other structures and corresponding technical effects of the light-emitting devices shown in Figures 3A to 3B are all the same as those of the light-emitting devices shown in Figures 1A to 1B, so you can refer to the description of the light-emitting devices shown in Figures 1A to 1B.

[0072] Figure 4A is a schematic planar structure of another light-emitting device according to one embodiment of the present disclosure, and Figure 4B is a schematic cross-sectional view of the light-emitting device shown in Figure 4A. The light-emitting devices shown in Figures 4A to 4B have the following differences compared to the light-emitting devices shown in Figures 1A to 1B.

[0073] Referring to Figures 4A-4B, for example, the interlayer insulating layer IL0 has an edge E1 close to the first working area 1A, and the portion of the ejector pin on the first bridge electrode 4 that covers the first working area 1A does not cover the edge E1 of the interlayer insulating layer IL0 and has a flat surface, thereby eliminating the step difference in the first working area 1A between the first bridge electrode 4 and the interlayer insulating layer IL0. If the edge E1 of the interlayer insulating layer IL0 is present in the first working area 1A, a step difference is formed when the first bridge electrode 4 covers the edge E1 of the interlayer insulating layer IL0. When the ejector pin acts on the first working area 1A, if the ejector pin covers the step difference and pushes on the step difference, the pressure at the step difference is too great, and as a result, the top of the light-emitting device 10 is severely damaged at the step difference, and the damage is particularly widespread at the first bridge electrode 4 which is relatively close to the ejector pin. If the first bridge electrode 4 breaks, the effectiveness of the electrical connection between the current diffusion layer 2 and the first semiconductor layer 1a and the first electrode 01 will be reduced, affecting the luminous efficiency of the light-emitting device. By adopting the solution shown in Figures 4A to 4B, it is possible to prevent the edge E1 of the interlayer insulating layer IL0 from being present in the first working area 1A of the ejector pin. As a result, the first bridge electrode 4 does not cover the edge E1 of the interlayer insulating layer IL0, and no step is created in the first working area 1A of the ejector pin due to the first bridge electrode 4 covering the edge E1 of the interlayer insulating layer IL0. In this way, when the ejector pin acts on the first working area 1A, it does not press on the step position, thereby avoiding causing significant damage to the first bridge electrode 4 at the step position.

[0074] For example, in the embodiment shown in Figures 4A to 4B, a portion of the first semiconductor layer 1a is covered with an interlayer insulating layer IL0, and for example, the lateral length of the portion of the first semiconductor layer 1a covered with the interlayer insulating layer IL0 is less than 1 / 4 of the lateral length of the first semiconductor layer 1a, so that a sufficiently flat area remains in the first working area 1A (i.e., there is no step area between the first bridge electrode 4 and the interlayer insulating layer IL0). This makes it easier to operate the ejector pin to act on the first working area 1A and transport the light-emitting device, and ensures that the top film layer of the light-emitting device is not damaged.

[0075] Furthermore, the "step" described in this application can be understood as a stepped structure, and since this is the same in other embodiments, it will not be explained in detail.

[0076] The other structures and corresponding technical effects of the light-emitting devices shown in Figures 4A to 4B are all the same as those of the light-emitting devices shown in Figures 3A to 3B, so you can refer to the description of the light-emitting devices shown in Figures 3A to 3B.

[0077] Figure 5A is a schematic planar structure of another light-emitting device according to one embodiment of the present disclosure, and Figure 5B is a schematic cross-sectional view of the light-emitting device shown in Figure 5A. The light-emitting devices shown in Figures 5A to 5B have the following differences compared to the light-emitting devices shown in Figures 3A to 3B.

[0078] Referring to Figures 5A to 5B, for example, the portion of the ejector pin covering the first working area 1A of the first bridge electrode 4 does not cover the edge E1 of the interlayer insulating layer IL0 near the first working area 1A, and has a flat surface, thereby eliminating the step difference within the first working area 1A between the first bridge electrode 4 and the interlayer insulating layer IL0, and the first semiconductor layer 1a as a whole is not covered by the interlayer insulating layer IL0, that is, the first semiconductor layer 1a does not have a portion covered by the interlayer insulating layer IL0, and in order for the interlayer insulating layer IL0 to insulate the first bridge electrode 4 and the second semiconductor layer 1c, the edge E1 of the interlayer insulating layer IL0 near the first working area 1A and the edge of the first semiconductor layer 1a near the interlayer insulating layer IL0 are in contact with each other, and there is no lateral gap between these two, that is, the edge E1 of the interlayer insulating layer IL0 near the first working area 1A surface Orthographic projection, and the edge of the first semiconductor layer 1a near the interlayer insulating layer IL0 surface The orthographic projections overlap each other, at least within the area where the first bridge electrode 4 is distributed, and there is no gap between these two orthographic projections. In this way, a sufficient platform area is left in the first working area 1A, making it easier for the ejector pins to act on the first working area 1A to transport the light-emitting device, and ensuring that the top film layer of the light-emitting device is not damaged.

[0079] The other structures and corresponding technical effects of the light-emitting devices shown in Figures 5A to 5B are all the same as those of the light-emitting devices shown in Figures 4A to 4B, so you can refer to the description of the light-emitting devices shown in Figures 4A to 4B.

[0080] Figure 6A is a schematic cross-sectional view of another light-emitting device according to one embodiment of the present disclosure. The light-emitting device shown in Figure 6A has the following differences compared to the light-emitting device shown in Figure 1A-1B. Referring to Figure 6A, the light-emitting device 10 includes a first electrode 01 and a second electrode 02. The first electrode 01 is electrically connected to the first semiconductor layer 1a, and the second electrode 02 is electrically connected to the second semiconductor layer 1b. If the direction in which the first semiconductor layer 1a and the second semiconductor layer 1b are stacked relative to each other is defined as the perpendicular direction, then the first electrode 01 is perpendicular to the perpendicular direction. aspectThe orthographic projection in the first semiconductor layer 1a surface The orthographic projection overlaps at least partially, and the first electrode 01 and the first semiconductor layer 1a are directly electrically connected via the first via V1, rather than, for example, the first bridge electrode. For example, the first electrode 01 and the first semiconductor layer 1a are not electrically connected by other structures such as the first bridge electrode, with no other conductive structures between them, and the first bridge electrode and the interlayer insulating layer for insulating the first bridge electrode from the second semiconductor layer are eliminated, simplifying the structure of the light-emitting device 10. This allows a flat structure to be formed on the surface of the first semiconductor layer 1a away from the second semiconductor layer 1b (i.e., above the first semiconductor layer 1a), and the ejector pins act on the flat structure, reducing damage to the platform structure above the first semiconductor layer 1a and to the first semiconductor layer 1a by the ejector pins.

[0081] For example, referring to Figure 6A, the light-emitting device 10 is laminated on a first semiconductor layer 1a and a second semiconductor layer 1b, and includes a current-diffusing layer 2 located on the side of the first semiconductor layer 1a away from the second semiconductor layer 1b, and in contact with at least a portion of the first semiconductor layer 1a to electrically connect with each other, the current-diffusing layer 2 including an ejector pin operating portion located in the central region CA. For example, as shown in Figure 6A, the first electrode 01 is electrically connected to the current-diffusing layer 2 by contacting the current-diffusing layer 2 via a first via V1. For example, the surface of the current-diffusing layer 2 away from the first semiconductor layer 1a is a flat surface. In this embodiment, the first bridge electrode and the interlayer insulating layer for insulating the first bridge electrode from the second semiconductor layer are removed, thereby eliminating the step formed by the insulating of the first bridge electrode and the second semiconductor layer on the current-diffusing layer 2. For example, the current-diffusing layer 2 also functions as a protective layer covering the first operating area 1A of the ejector pin of the first semiconductor layer 1a. For example, the current diffusion layer 2 covers the entire first operating area 1A of the ejector pin, thereby ensuring that the entire region in contact with the ejector pin is flat. For example, the current diffusion layer 2 covers a portion of the upper surface of the first semiconductor layer 1a, and for example, the area of ​​the portion of the upper surface of the first semiconductor layer 1a covered by the current diffusion layer 2 is equal to or greater than half of the area of ​​the upper surface of the first semiconductor layer 1a, and for example, the current diffusion layer 2 covers the entire first semiconductor layer 1a. Since the surface of the current diffusion layer 2 away from the first semiconductor layer 1a is a flat surface, there are no edges of film layers that would form a step between film layers within the first operating area 1A of the ejector pin. At the edges, the pressure from the ejector pin is relatively large, causing serious damage. As a result, in the process of transporting the light-emitting device 10 with the ejector pin shown in Figure 3A, the ejector pin acting on the first operating area 1A does not cause significant damage to the current diffusion layer 2. Consequently, the flat current diffusion layer 2 reduces the damage that the ejector pin inflicts on the current diffusion layer 2 itself and the first semiconductor layer 1a covered by the current diffusion layer 2 during the process of transporting the light-emitting device 10.

[0082] Figure 6B is a schematic cross-sectional view of another light-emitting device according to one embodiment of the present disclosure. The light-emitting device shown in Figure 6B differs from the light-emitting device shown in Figure 6A in the following ways. Referring to Figure 6B, similar to the solutions in Figures 1A-1B, the light-emitting device 10 includes an additional floating protective layer as a protective layer 3, which at least covers the portion of the current diffusion layer 2 on which the ejector pins act, thereby further blocking the damage that the ejector pins inflict on the current diffusion layer 2 and the first semiconductor layer 1a. The remaining structures in Figure 6B are all the same as the corresponding structures in Figure 6A, so the description of Figure 6A can be referred to. Also, other structures not described in Figures 6A and 6B, such as the substrate and light-emitting layer, are all not redundant here, as the corresponding features of the other embodiments described above can be referred to.

[0083] Figure 7A is a schematic planar structure of another light-emitting device according to one embodiment of the present disclosure, and Figure 7B is a schematic cross-sectional view of the light-emitting device shown in Figure 7A. The light-emitting devices shown in Figures 7A to 7B have the following differences compared to the light-emitting devices shown in Figures 1A to 1B.

[0084] Referring to Figures 7A to 7B, for example, if the direction in which the first semiconductor layer 1a and the second semiconductor layer 1b are stacked relative to each other is defined as the vertical direction, then the first bridge electrode 4 is perpendicular to the vertical direction. aspect The orthographic projection is shown in the first semiconductor layer 1a surface The first working area 1A of the ejector pin overlaps with a portion of the orthographic projection and is located in the central region. surfaceIt does not overlap with the orthographic projection. When the light-emitting device 10 is transferred by the ejector pin, the ejector pin is located in the first working area 1A. According to the technical solution in Figures 7A-7B, the first bridge electrode 4 can avoid the first working area 1A of the ejector pin, and there is no edge E3 of the first bridge electrode 4 close to the first working area 1A within the first working area 1A. This prevents the first bridge electrode 4 from being damaged by the ejector pin, and also avoids the step formed by the edge E3 of the first bridge electrode 4 being present in the first working area 1A. This avoids the risk of the film layer at the step being severely damaged by the ejector pin, thereby improving the success rate of transferring the light-emitting device.

[0085] Referring to Figure 7A, for example, the orthographic projection of the first bridge electrode 4 extends laterally in D1 toward the orthographic projection of the first semiconductor layer 1a until it overlaps with it. The width in the laterally in D1 of the portion of the orthographic projection of the first bridge electrode 4 that overlaps with the orthographic projection of the first semiconductor layer 1a is less than half the width in the laterally in D1 of the first semiconductor layer 1a, thereby ensuring that the first bridge electrode 4 avoids the first working area 1A of the ejector pin.

[0086] Referring to Figure 7A, for example, the first bridge electrode 4 surface In the orthographic projection, the edge E3 near the first working area 1A includes a recessed portion that is set back from the first working area 1A. The presence of this recess makes the edge E3 of the first bridge electrode 4 less likely to be pressed by the ejector pin, reducing the risk of the edge E3 of the first bridge electrode 4 contacting the ejector pin, and allowing the edge E3 of the first bridge electrode 4 to avoid the ejector pin during the process in which the ejector pin acts.

[0087] Referring to Figure 7A, for example, the first bridge electrode 4 surface Orthographic projection, and ejector pin located in the first working area 1A. surfaceIn orthographic projection, the opposing edges have complementary outer contour shapes; that is, the recess of the edge E3 of the first bridge electrode 4 is complementary in shape to the edge of the opposing first working area 1A, thereby allowing the edge E3 of the first bridge electrode 4 to more effectively avoid the ejector pin.

[0088] Referring to Figure 7A, for example, the first bridge electrode 4 surface The shape of the recess at the edge E3 of the orthographic projection is an arc shape that is recessed away from the first working area 1A. For example, the edge E3 of the first working area 1A surface The orthographic projection is arc-shaped, for example, ejector pin surface The orthographic outer contour is circular, and the arc of the edge E3 of the first working area 1A of the ejector pin and the outer contour of the ejector pin have substantially the same curvature in the opposing arc portions, thereby allowing the edge E3 of the first bridge electrode 4 to more effectively avoid the ejector pin.

[0089] Referring to Figure 7A, for example, the interlayer insulating layer IL0 has an edge E1 close to the first working area 1A, and in the lateral direction D1, the edge E1 of the interlayer insulating layer IL0 is located away from the first working area 1A of the ejector pin at the edge E3 of the first bridge electrode 4, thereby avoiding the formation of a step between the interlayer insulating layer IL0 and the first bridge electrode 4 near the central region. For example, in Figure 7A, a portion of the first semiconductor layer 1a is covered by the interlayer insulating layer IL0, but in other embodiments, the position of the interlayer insulating layer IL0 may be similar to that in Figure 5A, and the edge E1 of the interlayer insulating layer IL0 close to the first working area 1A and the edge of the first semiconductor layer 1a close to the interlayer insulating layer IL0 are in contact with each other, and there is no lateral gap between these two, that is, the edge E1 of the interlayer insulating layer IL0 close to the first working area 1A surface Orthographic projection, and the edge of the first semiconductor layer 1a near the interlayer insulating layer IL0 surface The orthographic projections overlap each other, at least within the area where the first bridge electrode 4 is distributed, and there is no gap between these two orthographic projections.

[0090] For example, the light-emitting device shown in Figure 7A does not include the protective layer 3.

[0091] The other structures and corresponding technical effects of the light-emitting devices shown in Figures 7A to 7B are all the same as those of the light-emitting devices shown in Figures 1A to 1B, so you can refer to the description of the light-emitting devices shown in Figures 1A to 1B.

[0092] For example, Figure 8A is a schematic planar structure of another light-emitting device according to one embodiment of the present disclosure, and Figure 8B is a schematic cross-sectional view of the light-emitting device shown in Figure 8A. The light-emitting devices shown in Figures 8A to 8B have the following differences compared to the light-emitting devices shown in Figures 7A to 7B. Referring to Figures 8A to 8B, for example, the light-emitting device 10 may include the protective layer 3, which is floating, thereby enhancing protection for the current diffusion layer 2 and the first semiconductor layer 1a.

[0093] Figure 9 is a schematic planar structure of another light-emitting device according to one embodiment of the present disclosure. Referring to Figure 9, for example, one light-emitting unit of the light-emitting device includes a plurality of light-emitting subunits, the plurality of light-emitting subunits including a transport light-emitting subunit B and a first light-emitting subunit A adjacent to the transport light-emitting subunit B. As in Figure 1C, taking as an example a case in which one light-emitting unit includes an odd number (e.g., three) of continuously arranged light-emitting subunits, the first light-emitting subunit A, the second light-emitting subunit B, and the third light-emitting subunit C constitute one light-emitting unit, and the transport light-emitting subunit is located in the middle of the odd number of light-emitting subunits, i.e., the intermediate second light-emitting subunit B functions as the transport light-emitting subunit. The first light-emitting subunit A is adjacent to the transport light-emitting subunit B. The light-emitting device 10 further includes a second bridge electrode 5, which electrically connects the first semiconductor layer 1a of the transport light-emitting subunit B and the second semiconductor layer 1b of the first light-emitting subunit A. For example, the second bridge electrode 5 also functions as the protective layer described above; that is, the second bridge electrode 5 covers at least the central region CA and the first working area 1A of the transfer light-emitting subunit B, for example, the second bridge electrode 5 covers the entire first working area 1A, thereby protecting all film layers in the region in contact with the ejector pins. For example, the second bridge electrode 5 covers a portion of the upper surface of the first semiconductor layer 1a, or in other embodiments, the area of ​​the portion of the upper surface of the first semiconductor layer 1a covered by the second bridge electrode 5 is equal to or greater than half of the total area of ​​the upper surface of the first semiconductor layer 1a, for example, the second bridge electrode 5 covers the entire first semiconductor layer 1a.As a result, the second bridge electrode 5 is larger compared to a normal light-emitting device. For example, because the second bridge electrode 5 covers the first working area 1A, the edge of the second bridge electrode 5 does not exist within the first working area 1A of the ejector pin. The pressure from the ejector pin is relatively large at the edge, causing serious damage. Therefore, in the process of transporting the light-emitting device 10 with the ejector pin shown in Figure 9, the ejector pin acting on the first working area 1A does not cause significant damage to the second bridge electrode 5. This reduces the damage that the ejector pin inflicts on the second bridge electrode 5 and the film layer below the second bridge electrode 5 during the transport process of the light-emitting device 10, for example, reducing damage to the current diffusion layer 2 and the first semiconductor layer 1a.

[0094] For example, in the light-emitting device shown in Figure 9, the upper surface of the second bridge electrode 5 away from the first semiconductor layer 1a is a flat surface. That is, there is no step formed by the second bridge electrode 5 and other film layers on the upper surface of the second bridge electrode 5. As a result, no such step exists within the first working area 1A, preventing the ejector pin from applying large pressure to the film layer at the step position, and thus avoiding the problem of serious damage occurring at the step position at the top of the light-emitting device 10.

[0095] For example, in the light-emitting device shown in Figure 9, the transfer light-emitting subunit B may include the protective layer added above, similar to the floating protective layer 3 in Figures 1A-1B, or it may not have the floating protective layer added above.

[0096] For other unmentioned structures of each light-emitting subunit in Figure 9, refer to the above description.

[0097] Figure 10 is a schematic planar diagram of a light-emitting device including an even number of light-emitting subunits according to one embodiment of the present disclosure. Referring to Figure 10, for example, the light-emitting device 10 includes a plurality of light-emitting subunits, each light-emitting subunit including a first semiconductor layer 1a and a second semiconductor layer 1b laminated on the first semiconductor layer 1a and made of a different material from the first semiconductor layer 1a, and a plurality of continuously arranged light-emitting subunits constitute a single light-emitting unit.

[0098] For example, an even number of consecutively arranged light-emitting subunits constitute one light-emitting unit. Referring to Figure 10, here we take two consecutively arranged light-emitting subunits as an example: the second light-emitting subunit B and the third light-emitting subunit C, which are adjacent to each other, constitute one light-emitting unit. Sub A gap SP exists between the light-emitting unit B and the third light-emitting subunit C, and the second working area 2A of the ejector pin is within the gap SP. The surface of the gap SP away from the substrate 101 is flat, that is, the surface of the gap SP in contact with the second working area 2A is flat, which means that there are no steps or unevenness formed by the edges of layers on the surface of the gap SP in contact with the second working area 2A. When the light-emitting device 10 is transported by the ejector pin, the ejector pin is located in the second working area 2A, and the ejector pin acts on the second working area 2A to transport multiple light-emitting subunits simultaneously. The light-emitting device 10 further includes a second bridge electrode 5, and the second bridge electrode 5 is the second Sub When the first semiconductor layer 1a of the light-emitting unit B and the second semiconductor layer 1b of the third light-emitting subunit C are electrically connected, and the direction in which the first semiconductor layer 1a and the second semiconductor layer 1b are stacked relative to each other is defined as the vertical direction, then the second bridge electrode 5 is perpendicular to the vertical direction. aspect The orthographic projection shows the second working area 2A of the ejector pin. surfaceBy not overlapping with the orthographic projection, the second bridge electrode 5 avoids the second working area 2A of the ejector pin, and there are no edges of the second bridge electrode 5 within the second working area 2A. The ejector pin acts on a flat gap SP, thereby preventing the second bridge electrode 5 from being damaged by the ejector pin, and also avoiding the step formed in the second working area 2A by the edge of the second bridge electrode 5. This reduces the risk of the film layer at the step being severely damaged by the ejector pin, thereby improving the success rate of transporting the light-emitting device.

[0099] Referring to Figure 10, for example, the second Sub The light-emitting unit B and the third light-emitting subunit C are arranged in the lateral direction D1, and in the plane on which the second semiconductor layer 1b extends, the direction perpendicular to the lateral direction D1 is the vertical direction D2. The second bridge electrode 5 extends in the lateral direction D1 and is located on one side of the second working area 2A in the vertical direction D2. In the vertical direction D2, the second working area 2A is located in the intermediate region of the spacing SP, that is, in the vertical direction D2, from the center of the second working area 2A to the second Sub The distance to the upper edge of the light-emitting unit B is from the center of the second operating area 2A to the second Sub The distance to the lower edge of the light-emitting unit B is substantially equal to the second Sub The upper edge and second Sub The lower edges of the light-emitting unit B face each other in the vertical direction D2. For example, the upper edge of the third light-emitting subunit C and the second Sub The upper edge of the light-emitting unit B is substantially flush with the lower edge of the third light-emitting subunit C and the second Sub The lower edge of the light-emitting unit B is substantially flush. In the lateral direction D1, the second operating area 2A is also in the intermediate region of the spacing SP, that is, in the lateral direction D1, from the center of the second operating area 2A to the second Sub The distance from the center of the second operating area 2A to the edge of the third light-emitting subunit C of the light-emitting unit B is the distance from the center of the second operating area 2A to the second edge of the third light-emitting unit C. Sub The distance to the edge closest to the light-emitting unit B is substantially equal to the second Sub The upper edge of the light-emitting unit B, and the second SubThe lower edges of the light-emitting unit B face each other in the vertical direction D2. In this way, the second bridge electrode 5 avoids the second working area 2A, and the second bridge electrode 5 to the ejector pin of This design avoids damage and allows the ejector pins to act on the intermediate region of the spacing SP, thereby maintaining the balance of the light-emitting device during transport and improving the success rate of the light-emitting device transport.

[0100] For example, the center of the second working area 2A refers to the geometric center of the plan view of the second working area 2A. The region where the surface of the ejector pin that contacts the light-emitting device exists is the second working area 2A. In Figure 10, the second working area 2A is exemplified as a circle, and the center of the second working area 2A is the center of the circle. Of course, it may also be other regular shapes, such as polygons or ellipses.

[0101] Referring to Figure 10, for example, the second bridge electrode 5 surface In the orthographic projection, the edge 51 closest to the second working area 2A (hereinafter referred to as the edge 51 of the second bridge electrode 5) includes a recessed portion that is set back from the second working area 2A. The presence of this recess makes it difficult for the edge 51 of the second bridge electrode 5 to be pressed by the ejector pin, reducing the risk of the edge 51 of the second bridge electrode 5 contacting the ejector pin, and allowing the edge 51 of the second bridge electrode 5 to avoid the ejector pin during the process in which the ejector pin acts.

[0102] Referring to Figure 10, for example, the second bridge electrode 5 surface Orthographic projection, and ejector pin located in the second working area 2A. surface In the orthographic projection, the opposing edges are complementary in shape, and the shape of the recess of the edge 51 of the second bridge electrode 5 is the second working area 2A surface The shape of the edge facing the second bridge electrode 5 in the orthographic projection is complementary, thereby allowing the edge 51 of the second bridge electrode 5 to more effectively avoid the ejector pin.

[0103] Referring to Figure 10, for example, the first edge BE1 of the second semiconductor layer 1b of the second light-emitting subunit B that is close to the third light-emitting subunit C in the lateral direction D1 is closer to the spacing SP than the first edge BE2 of the first semiconductor layer 1a of the second light-emitting subunit B that is close to the third light-emitting subunit C in the lateral direction D1, and the first edge CE1 of the second semiconductor layer 1b of the third light-emitting subunit C that is close to the second light-emitting subunit B in the lateral direction D1 is closer to the spacing SP than the first edge CE2 of the first semiconductor layer 1a of the third light-emitting subunit C that is close to the second light-emitting subunit B in the lateral direction D1. The first edge BE1 of the second semiconductor layer 1b of the second light-emitting subunit B includes a recessed portion that is set back away from the third light-emitting subunit C, and the first edge CE1 of the second semiconductor layer 1b of the third light-emitting subunit C includes a recessed portion that is set back away from the second light-emitting subunit B. Due to the presence of the aforementioned recesses, the first edge BE1 of the second semiconductor layer 1b of the second light-emitting subunit B and the first edge CE1 of the second semiconductor layer 1b of the third light-emitting subunit C are less likely to be pressed by the ejector pins. This reduces the risk of the first edge BE1 of the second semiconductor layer 1b of the second light-emitting subunit B and the first edge CE1 of the second semiconductor layer 1b of the third light-emitting subunit C coming into contact with the ejector pins, thus allowing the entire second semiconductor layer 1b of the second light-emitting subunit B and the entire second semiconductor layer 1b of the third light-emitting subunit C to avoid the ejector pins during the process in which the ejector pins are acting.

[0104] Referring to Figure 10, for example, the shape of the recess at the first edge BE1 of the second semiconductor layer 1b of the second light-emitting subunit B is complementary to the shape of the recess at the first edge CE1 of the second semiconductor layer 1b of the third light-emitting subunit C, thereby allowing the second semiconductor layer 1b of the second light-emitting subunit B and the second semiconductor layer 1b of the third light-emitting subunit C to more effectively avoid the ejector pin.

[0105] Referring to Figure 10, for example, the first semiconductor layer 1a of the second light-emitting subunit B surface Orthographic projection in the first semiconductor layer 1a of the third light-emitting subunit C. surfaceIn orthographic projection, the opposing edges each include a recessed portion that is set back from the spacing SP, that is, the edge BE3 of the second light-emitting subunit B in the first semiconductor layer 1a near the third light-emitting subunit C includes a recessed portion that is set back from the third light-emitting subunit C, and the edge CE3 of the third light-emitting subunit C in the first semiconductor layer 1a near the second light-emitting subunit B includes a recessed portion that is set back from the second light-emitting subunit B.

[0106] Referring to Figure 10, for example, the light-emitting layer 1c of the second light-emitting subunit B. surface Orthographic projection, and the light-emitting layer 1c of the third light-emitting subunit C. surface In orthographic projection, the opposing edges each include recessed portions that are set back from the spacing SP, thereby allowing the light-emitting layer 1c of the second light-emitting subunit B and the light-emitting layer 1c of the third light-emitting subunit C to more effectively avoid the second operating area 2A of the ejector pin.

[0107] For example, in the light-emitting device shown in Figure 10, each light-emitting subunit may include a first operating area of ​​the ejector pin. Each light-emitting subunit may be provided with a corresponding floating protective layer (floating protective layer 3 in Figures 1A-1B), thereby providing a first operating area of ​​the ejector pin, where the ejector pin acts on the central region, for each light-emitting subunit, as preparation for transporting multiple light-emitting subunits, and thus increasing the number of methods for transporting the light-emitting device. For example, in the light-emitting device shown in Figure 10, a floating protective layer may not be provided.

[0108] For example, in the light-emitting device shown in Figure 10, the second light-emitting subunit B may include a first working area for the ejector pin. This allows for a first working area for the ejector pin, where the ejector pin acts on the central region, to be provided for each light-emitting subunit in preparation for transporting multiple light-emitting subunits, thus increasing the number of methods for transporting the light-emitting device. In the second light-emitting subunit B, a corresponding protective layer may be provided, and the second bridge electrode 5 may be enlarged so that the second bridge electrode 5 covers the central region of the first semiconductor layer 1a of the second light-emitting subunit B, and the second bridge electrode 5 covers the first working area for the ejector pin of the second light-emitting subunit B, that is, the second bridge electrode 5 may also function as a protective layer. This is similar to how the first bridge electrode 4 in Figure 4A functions as a protective layer, preventing the ejector pin from damaging the film layer of the light-emitting device. The same applies to the third light-emitting subunit C. In this case, the second bridge electrode 5 may have features related to the first bridge electrode in the above embodiment where the first bridge electrode functions as a protective layer (for example, the shape of the edge is complementary to the shape of the outer contour of the corresponding first working area), and these features may be combined with the fact that the second bridge electrode 5 in Figure 10 also functions as a protective layer.

[0109] Figure 11 is a schematic cross-sectional view along the line D-D' in Figure 10. Referring to Figure 11, if the direction in which the first semiconductor layer 1a and the second semiconductor layer 1b are stacked relative to each other is defined as the vertical direction D4, then the horizontal direction D3 is perpendicular to the vertical direction D4. For example, the cross-section of the second bridge electrode 5 in the vertical direction D4 includes the first slope S1, and the angle between the first slope S1 and the horizontal direction D3 (hereinafter referred to as the first angle) is 70° or less. A smaller first angle is advantageous for maintaining the stability of the film layer of the second bridge electrode 5, advantageous for the stability of the second bridge electrode 5 when it covers the film layer below it, and advantageous for the overall stability of the light-emitting device structure. Test results show that when the first angle is 70° or less, the stability of the film layer of the second bridge electrode 5 is favorable, while when the first angle is greater than 70°, the second bridge electrode 5 is prone to detachment, and the stability of the film layer is poor.

[0110] Referring to Figure 11, for example, the cross-section of the second semiconductor layer 1b in the vertical direction D4 includes the second slope S2, and the angle between the second slope S2 and the horizontal direction (hereinafter referred to as the second angle) is 70° or less. The smaller the second angle, the more advantageous it is for maintaining the stability of the film layer covering the second slope S2 of the second semiconductor layer 1b, and the more advantageous it is for the overall stability of the light-emitting device structure. Test results showed that when the second angle is 70° or less, the stability of the film layer is favorable, and when the second angle is greater than 70°, the film layer covering the second slope S2 of the second semiconductor layer 1b is prone to detachment, and the stability of the film layer is poor.

[0111] At least one embodiment of the present disclosure also provides a display device, and Figure 12 shows an embodiment of the present disclosure. display A schematic diagram of the device is shown in Figure 12, where the display device 1000 according to an embodiment of the present disclosure includes any of the light-emitting devices 10 according to an embodiment of the present disclosure. For example, the display device 1000 includes a light-emitting array, which includes a plurality of light-emitting devices 10 arranged in an array. For example, the display device may be a display, display panel, television, electronic paper, mobile phone, tablet computer, laptop computer, digital photo frame, navigator, or other product or component with a display function. Of course, the display device is not limited to the above types.

[0112] At least one embodiment of the present disclosure also provides a backlighting device, and Figure 13 is a schematic block diagram of a backlighting device according to one embodiment of the present disclosure. Referring to Figure 13, the backlighting device 100 according to an embodiment of the present disclosure includes any of the light-emitting devices 10 according to an embodiment of the present disclosure. The backlighting device 100 may also serve as a backlighting source for any electronic device requiring backlighting. For example, the backlighting device 100 includes a light-emitting array, the light-emitting array includes a plurality of light-emitting devices 10 arranged in an array.

[0113] At least one embodiment of the present disclosure also provides electronic equipment, and the electronic equipment according to the embodiment of the present disclosure includes any of the backlight devices 100 according to the embodiment of the present disclosure.

[0114] For example, the electronic device may be a display device, and the backlight device 100 may function as a backlight source for the display device. The display device may be, for example, a liquid crystal display device, or any other display device that requires a backlight source. For example, the display device may be a display, display panel, television, e-paper, mobile phone, tablet computer, laptop computer, digital photo frame, navigator, or other product or component with a display function. Of course, the specific type of display device is not limited to those listed above.

[0115] For example, the electronic device may be a lighting device, such as a lamp, and the backlight device 100 provides a light source to the lighting device as a backlight source for the lighting device.

[0116] The above description is merely an exemplary embodiment of the present invention and is not intended to limit the scope of protection of the present invention. The scope of protection of the present invention is determined according to the scope defined in the claims.

Claims

1. A light-emitting device including a light-emitting subunit, The aforementioned light-emitting subunit is The first semiconductor layer, A second semiconductor layer is provided stacked on the first semiconductor layer and is made of a different material from the first semiconductor layer, A light-emitting layer located between the first semiconductor layer and the second semiconductor layer, The first semiconductor layer includes a protective layer located on the side of the first semiconductor layer away from the second semiconductor layer, A light-emitting device wherein the first semiconductor layer includes a central region and an edge region surrounding the central region, the protective layer covers at least the central region, the central region includes a first working area, and when the light-emitting device is transported by the ejector pin, the ejector pin is located in the first working area.

2. The light-emitting device according to claim 1, wherein the first semiconductor layer has an upper surface separated from the second semiconductor layer, and the area of ​​the portion of the upper surface of the first semiconductor layer covered by the protective layer is in proportion to 1 / 2 or more of the area of ​​the upper surface of the second semiconductor layer.

3. The light-emitting device according to claim 1, wherein the protective layer covers the entire first semiconductor layer.

4. The light-emitting device according to claim 1, further comprising a current-diffusing layer laminated on the first semiconductor layer and the second semiconductor layer, located on the side of the first semiconductor layer away from the second semiconductor layer, and in contact with at least a portion of the first semiconductor layer to electrically connect with each other, wherein the current-diffusing layer includes an ejector pin operating portion located in the central region, and the protective layer at least covers the ejector pin operating portion of the current-diffusing layer.

5. The light-emitting device according to claim 4, wherein the protective layer covers the entire current diffusion layer.

6. The light-emitting device according to any one of claims 1 to 5, further comprising a first insulating layer, wherein the protective layer is floating, and the floating protective layer and the first semiconductor layer are separated by the first insulating layer and insulated from each other.

7. The light-emitting device according to claim 6, wherein the first insulating layer encloses the entire floating protective layer and is covered by and in contact with the lower surface of the floating reflective layer near the first semiconductor layer, the upper surface facing the lower surface, and the side surfaces intersecting both the upper and lower surfaces of the floating reflective layer.

8. A first bridge electrode located on the side of the first semiconductor layer away from the second semiconductor layer and insulated from the second semiconductor layer via an interlayer insulating layer, A first electrode electrically connected to the first semiconductor layer by a first bridge electrode, The present invention further includes a second electrode electrically connected to the second semiconductor layer, The light-emitting device according to any one of claims 1 to 5, wherein the first bridge electrode also functions as the protective layer, and the edge of the first bridge electrode is not located within the first working area of ​​the ejector pin.

9. The light-emitting device according to claim 8, wherein the portion of the first bridge electrode that covers the first working area of ​​the ejector pin does not cover the edge of the interlayer insulating layer and has a flat surface.

10. A first electrode electrically connected to the first semiconductor layer, The present invention further includes a second electrode that is electrically connected to the second semiconductor layer, and whose orthogonal projection on a horizontal plane perpendicular to the vertical direction, when the direction in which the first semiconductor layer and the second semiconductor layer are stacked relative to each other is defined as the vertical direction, at least partially overlaps with the orthogonal projection of the first semiconductor layer on the horizontal plane, and the first electrode and the first semiconductor layer are directly electrically connected via vias. The light-emitting device further includes a current-diffusing layer laminated on the first semiconductor layer and the second semiconductor layer, located on the side of the first semiconductor layer away from the second semiconductor layer, and in contact with at least a portion of the first semiconductor layer for electrical connection to each other, wherein the current-diffusing layer includes an ejector pin operating portion located in the central region. The light-emitting device according to any one of claims 1 to 3, wherein the surface of the current diffusion layer away from the first semiconductor layer is a flat surface, and the current diffusion layer also functions as the protective layer, or the light-emitting device further includes a first insulating layer, the protective layer is a floating reflective layer, the floating reflective layer and the first semiconductor layer are separated by the first insulating layer and insulated from each other, and the protective layer covers at least the ejector pin operating portion of the current diffusion layer.

11. A first bridge electrode located on the side of the first semiconductor layer away from the second semiconductor layer and insulated from the second semiconductor layer via an interlayer insulating layer, A first electrode electrically connected to the first semiconductor layer by a first bridge electrode, A light-emitting device according to any one of claims 1 to 7, further comprising: a second electrode electrically connected to the second semiconductor layer, wherein, when the direction in which the first semiconductor layer and the second semiconductor layer are stacked relative to each other is considered perpendicular, the first bridge electrode is located on the side of the first semiconductor layer away from the second semiconductor layer, and the orthogonal projection of the first bridge electrode on a horizontal plane perpendicular to the vertical direction overlaps with a portion of the orthogonal projection of the first semiconductor layer on the horizontal plane, and does not overlap with the orthogonal projection of the first working area of ​​the central region on the horizontal plane.

12. The light-emitting device according to claim 11, wherein the orthographic projection of the first bridge electrode extends laterally toward the orthographic projection of the first semiconductor layer until it overlaps with it, and the lateral width of the portion of the orthographic projection of the first bridge electrode that overlaps with the orthographic projection of the first semiconductor layer is less than half the lateral width of the first semiconductor layer.

13. The light-emitting device according to claim 11 or 12, wherein when the light-emitting device is transferred by the ejector pin, the ejector pin is located in the first working area, and the edge of the first bridge electrode in the orthographic projection on the horizontal plane that is close to the first working area includes a recessed portion that is recessed away from the first working area.

14. The light-emitting device according to claim 13, wherein the shape of the recess at the edge of the orthographic projection of the first bridge electrode in the horizontal plane is complementary to the shape of the outer contour of the edge facing the first bridge electrode in the orthographic projection of the first working area in the horizontal plane.

15. The light-emitting device according to claim 13 or 14, wherein the shape of the recess at the edge of the orthographic projection of the first bridge electrode on the horizontal plane is an arc shape recessed away from the first working area.

16. The light-emitting device according to any one of claims 1 to 15, wherein the light-emitting device includes a plurality of light-emitting subunits, each of which includes a first semiconductor layer and a second semiconductor layer laminated on the first semiconductor layer and made of a different material from the first semiconductor layer, the plurality of light-emitting subunits include a transport light-emitting subunit, and the transport light-emitting subunit further includes the protective layer.

17. The light-emitting device according to claim 16, wherein an odd number of light-emitting subunits arranged in a continuous sequence constitute a single light-emitting unit, and the transport light-emitting subunit is located at an intermediate position among the odd number of light-emitting subunits.

18. The plurality of light-emitting subunits include a first light-emitting subunit adjacent to the transport light-emitting subunit, The light-emitting device according to claim 16 or 17, further comprising a second bridge electrode, the second bridge electrode electrically connecting the first semiconductor layer of the transport light-emitting subunit and the second semiconductor layer of the first light-emitting subunit.

19. The light-emitting device according to claim 18, wherein the second bridge electrode also functions as the protective layer.

20. The plurality of light-emitting subunits include a second light-emitting unit and a third light-emitting subunit adjacent to each other, with a gap between the second light-emitting unit and the third light-emitting subunit, the second operating area of ​​the ejector pin is located within the gap, and when the light-emitting device is moved by the ejector pin, the ejector pin is located in the second operating area. The light-emitting device according to claim 16, further comprising a second bridge electrode, the second bridge electrode electrically connects the first semiconductor layer of the second light-emitting unit and the second semiconductor layer of the third light-emitting subunit, and when the direction in which the first semiconductor layer and the second semiconductor layer are stacked relative to each other is defined as perpendicular, the orthogonal projection of the second bridge electrode on a horizontal plane perpendicular to the perpendicular direction does not overlap with the orthogonal projection of the second working area of ​​the ejector pin on the horizontal plane.

21. The second light-emitting unit and the third light-emitting subunit are arranged in the lateral direction, and in the plane on which the second semiconductor layer extends, the direction perpendicular to the lateral direction is the vertical direction. The light-emitting device according to claim 20, wherein the second bridge electrode extends in the lateral direction and is located on one side of the second working area in the vertical direction.

22. The light-emitting device according to claim 21, wherein the edge of the second bridge electrode in the orthographic projection on the horizontal plane, near the second working area, includes a recessed portion that is recessed away from the second working area.

23. The light-emitting device according to claim 22, wherein the recess of the edge of the second bridge electrode near the second working area in the orthographic projection on the horizontal plane is complementary in shape to the outer contour of the edge of the second working area facing the second bridge electrode in the orthographic projection on the horizontal plane.

24. The first edge of the second semiconductor layer of the second light-emitting subunit that is closer to the third light-emitting subunit in the lateral direction is closer to the aforementioned spacing than the first edge of the first semiconductor layer of the second light-emitting subunit that is closer to the third light-emitting subunit in the lateral direction, and the first edge of the second semiconductor layer of the third light-emitting subunit that is closer to the second light-emitting subunit in the lateral direction is closer to the aforementioned spacing than the first edge of the first semiconductor layer of the third light-emitting subunit that is closer to the second light-emitting subunit in the lateral direction, The light-emitting device according to any one of claims 20 to 23, wherein the first edge of the second semiconductor layer of the second light-emitting subunit includes a recessed portion that is set back from the third light-emitting subunit, and the first edge of the second semiconductor layer of the third light-emitting subunit includes a recessed portion that is set back from the second light-emitting subunit.

25. In the orthographic projection of the first semiconductor layer of the second light-emitting subunit on the horizontal plane and the orthographic projection of the first semiconductor layer of the third light-emitting subunit on the horizontal plane, the opposing edges each include recessed portions that are recessed away from the spacing, and / or The light-emitting device according to claim 24, wherein in the orthographic projection of the light-emitting layer of the second light-emitting subunit on the horizontal plane and the orthographic projection of the light-emitting layer of the third light-emitting subunit on the horizontal plane, the edges facing each other each include recessed portions that are set back from the aforementioned interval.

26. The light-emitting device according to any one of claims 18 to 25, wherein the cross-section of the second bridge electrode along the vertical direction includes a first inclined plane, the angle between the first inclined plane and the horizontal direction is 70° or less, and the horizontal direction is perpendicular to the vertical direction.

27. The light-emitting device according to any one of claims 1 to 26, wherein, when the direction in which the first semiconductor layer and the second semiconductor layer are stacked relative to each other is defined as the perpendicular direction, the cross-section of the second semiconductor layer along the perpendicular direction includes a second slope, the angle between the second slope and the horizontal direction is 70° or less, and the horizontal direction is perpendicular to the vertical direction.

28. The light-emitting device is a mini light-emitting diode (Mini LED) or a micro light-emitting diode (Micro LED). The material of the current diffusion layer is a transparent conductive material. The light-emitting device according to any one of claims 1 to 27, wherein the first semiconductor material is a P-type semiconductor material and the second semiconductor material is an N-type semiconductor material, or the first semiconductor material is an N-type semiconductor material and the second semiconductor material is a P-type semiconductor material.

29. A light-emitting device comprising a plurality of light-emitting subunits, wherein each of the light-emitting subunits is The first semiconductor layer, A second semiconductor layer is provided stacked on the first semiconductor layer and is made of a different material from the first semiconductor layer, The present invention includes a light-emitting layer located between the first semiconductor layer and the second semiconductor layer and configured to emit light, The plurality of light-emitting subunits include a second light-emitting unit and a third light-emitting subunit adjacent to each other, with a gap between the second light-emitting unit and the third light-emitting subunit, the second operating area of ​​the ejector pin is located within the gap, and when the light-emitting device is transported by the ejector pin, the ejector pin is located in the second operating area. The light-emitting device further includes a second bridge electrode, the second bridge electrode electrically connects the first semiconductor layer of the second light-emitting unit and the second semiconductor layer of the third light-emitting subunit, and when the direction in which the first semiconductor layer and the second semiconductor layer are stacked relative to each other is defined as vertical, the orthogonal projection of the second bridge electrode on a horizontal plane perpendicular to the vertical direction does not overlap with the orthogonal projection of the second working area of ​​the ejector pin on the horizontal plane.

30. A backlight device, A backlight device comprising a light-emitting device according to any one of claims 1 to 29.

31. A display device, A display device comprising a light-emitting device according to any one of claims 1 to 29.

Images