Integrated cooling assembly including rear power / ground supply and method for manufacturing the same

Abstract

This disclosure provides an integrated cooling system including back-side power supply and a method for manufacturing the same. The integrated cooling assembly may include a device and a cold plate. The cold plate has a first side and a second side opposite thereto, the first side having a concave surface, a sidewall around the concave surface extending downward therefrom and defining a cavity, and a plurality of support features disposed within the cavity. The first side of the cold plate is attached to the back surface of the device and defines a coolant channel between them. The cold plate includes a substrate, a dielectric layer disposed on a first surface of the substrate, a first conductive layer disposed between the first surface and the dielectric layer, a second conductive layer disposed on a second surface of the substrate, and a through-substrate interconnect connecting the first conductive layer to the second conductive layer.

Description

Technical Field

[0004]

[0001] [Cross - Reference to Related Applications] This application claims priority to U.S. Provisional Patent Application No. 63 / 456,415, filed Mar. 31, 2023, the entire disclosure of which is incorporated herein by reference.

[0002] This disclosure relates to advanced packaging for microelectronic devices, specifically to embedded cooling systems including backside power delivery and methods of manufacturing the same.

Background Art

[0003] As the demand for large - scale computing increases, energy consumption in conjunction with chip layout management has become an important issue. Specifically, the active side, i.e., the front - side area of a semiconductor chip, is likely to be secured for various high - power - density circuits and / or other integrated circuits. Due to high power density, a supply network that can support an increase in energy consumption without interfering with the active side is required. In one approach, the device can include a power / ground delivery network on the front side. However, in this approach, the power / ground supply from the front side may occupy precious space that should have been secured to address large - scale computing demands. The supply network in such an approach may be difficult to manufacture while meeting large - scale computing demands such as low impedance and high computing frequency. Furthermore, the front - side power / ground supply network may also compete with the extensive signal routing required to support data traffic in large - scale computing.

[0004] Another approach involves placing the power / grounding network on the passive side, or back, of the chip. However, placing the power / grounding network on the back of the chip may interfere with components of the back-side heat dissipation system. Heat dissipation of high-power-density chips remains a critical issue because increased gate density and improved chip performance through multi-core microprocessors, etc., lead to higher power density and correspondingly increased heat flux that raises chip temperature. For example, even a slight increase in operating temperature can degrade the performance of microprocessors, memory devices, and other electronic components, so cooling costs in large-scale computing account for a significant portion of the energy requirements of computing centers. Power / grounding methods that interfere with the heat dissipation system may prevent thermal budgets from being met in large-scale computer systems and / or other computer systems. [Overview of the project] [Problems that the invention aims to solve]

[0005] Therefore, in this field, there is a need for an integrated cooling system having a power supply and / or ground supply, and a method for manufacturing the same. [Means for solving the problem]

[0006] This disclosure relates to an integrated cooling system that provides power / grounding and fluid cooling. Specifically, embodiments described herein provide an integrated device cooling assembly having a power and / or grounding network on a side separate from the active portion of the device. This integrated device cooling assembly has the advantage of reducing resistance in the thermal path and providing power / grounding on the same side as the device's heat dissipation system without interfering with the thermal path. In some embodiments, the thermal path formed by the integrated cooling assembly can be reinforced by the power / grounding network.

[0007] In one embodiment, an integrated cooling assembly includes a semiconductor device and a cold plate. The cold plate can be bonded to one side of the device to define a coolant channel between them. For example, the cold plate includes a patterned side spaced apart from one side of the device facing the device, and the patterned side has support features that define the coolant channel. The cold plate may include a substrate and a dielectric layer disposed on one side of the substrate.

[0008] In one embodiment, the cold plate includes a substrate, one or more sides including a first side and a second side, and one or more through-substrate interconnects. The first side may include one or more layers, for example, a first conductive layer and a dielectric layer. The dielectric layer may be disposed on and / or on the substrate. The second side may include one or more layers, for example, a second conductive layer. The through-substrate interconnects can connect the layers of the first side and the layers of the second side. For example, the through-substrate interconnects can electrically connect the first conductive layer on the first side and the second conductive layer on the second side. In some embodiments, the first and / or second conductive layers may include metallized components and / or be at least partially formed using a metallization process. For example, the first conductive layer may be formed by metallizing one side of the substrate. Such a conductive layer may be called a metallized layer.

[0009] In some embodiments, the cold plate may include a plurality of conductive layers disposed on both sides of the substrate and / or between the dielectric layer and each side of the substrate. The conductive layers may be disposed on both sides of the substrate. The cold plate may include through-substrate interconnects (e.g., vias) connecting one or more conductive layers on a first side of the substrate to one or more conductive layers on a second side of the substrate. In one embodiment, the cold plate may include (i) a first conductive layer disposed between a first portion of the first side of the substrate and the dielectric layer, (ii) a second conductive layer disposed on a second side of the substrate, and (iii) a through-substrate interconnect connecting the first conductive layer and the second conductive layer. Furthermore, the cold plate may include (iv) a third conductive layer disposed between a second portion of the first side of the substrate and the dielectric layer, (v) a fourth conductive layer disposed on a second side of the substrate, and (vi) a second through-substrate interconnect connecting the third conductive layer and the fourth conductive layer.

[0010] In one embodiment, the integrated cooling assembly includes a device and a cold plate. The device has an active side and a back side located opposite the active side. The cold plate may have a first side and a second side opposite to the first side. The first side of the cold plate may include a concave surface, a side wall surrounding the concave surface and extending downward therefrom to define a cavity, and a plurality of support features located within the cavity. The first side of the cold plate may be attached to the back side of the device to define a coolant channel between them.

[0011] In embodiments where the cold plate includes two or more conductive layers on the same side of the substrate, the conductive layers on the same side can be separated from each other and arranged in various configurations. For example, a second conductive layer can be placed on a fourth conductive layer and separated by a portion placed between them. For example, this portion may include a dielectric or insulating material. In a non-limiting example, a first portion of the first conductive layer and a second portion of the third conductive layer are laterally adjacent and separated by a portion of the dielectric layer.

[0012] In some embodiments, the cold plate may include a substrate, a dielectric layer disposed on the substrate, a first conductive layer disposed between one side of the substrate and the dielectric layer, a second conductive layer disposed on the other side of the substrate, and a through-substrate interconnect connecting the first and second conductive layers. For example, the substrate may have a first surface on the first side of the cold plate and a second surface on the side opposite to the first surface. The dielectric layer may be disposed on the first surface of the substrate. The first conductive layer may be disposed between the first surface and the dielectric layer. The second conductive layer may be disposed on the second surface of the substrate. In this example, the through-substrate interconnect extends from the first surface to the second surface to electrically connect the first and second conductive layers.

[0013] In some embodiments, the cold plate may include a first dielectric layer disposed on a first surface of a substrate, a first conductive layer disposed between at least a portion of the first surface and the first dielectric layer, a second conductive layer disposed on the first dielectric layer, covering the first conductive layer, a second dielectric layer disposed on a second surface of the substrate, a third conductive layer disposed between at least a portion of the second surface and the second dielectric layer, a fourth conductive layer disposed on the second dielectric layer, covering the third conductive layer, one or more first through-substrate interconnects connecting the first conductive layer to the third conductive layer, and one or more second through-substrate interconnects connecting the second conductive layer to the fourth conductive layer.

[0014] In some embodiments, the cold plate may include a first conductive layer disposed on a first portion of a second surface of the substrate and a second conductive layer disposed on a second portion of a second surface, wherein the first and second conductive layers are electrically disconnected or isolated from each other.

[0015] This disclosure provides a manufacturing process for an integrated cooling system that provides power / grounding and fluid cooling. In one process example, a substrate can be prepared having a first side including a base surface and support features. Multiple conductive vias can be formed on the substrate, starting from a second side of the substrate and ending at the base surface. A first conductive layer is formed on the first side. A second conductive layer is formed on the second side. The first and second conductive layers are connected by multiple conductive vias. A dielectric layer can be deposited on the first conductive layer to form a cold plate having a patterned first side. A portion of the patterned first side is prepared for bonding. The cold plate can be bonded to a semiconductor device to electrically couple the first conductive layer to the semiconductor device. When bonding the cold plate to a semiconductor device, a coolant channel can be established between the base surface and the device side by separating them.

[0016] In one embodiment, the manufacturing method of the integrated cooling system may include bonding the back side of the device to a first side of a cold plate to establish a coolant channel between them. The cold plate may include a substrate, a dielectric layer disposed on the substrate, a first conductive layer disposed between one side of the substrate and the dielectric layer, a second conductive layer disposed on the other side of the substrate, and a through-substrate interconnect connecting the first conductive layer to the second conductive layer.

[0017] In one embodiment, a method for manufacturing an integrated cooling system may include forming a cold plate having a first side having a concave surface, a side wall surrounding the concave surface and extending downward therefrom to define a cavity, and a plurality of support features disposed within the cavity, and a second side opposite to the first side. Forming the cold plate may include preparing a substrate having a first surface on the first side and a second surface opposite to the first surface, forming a dielectric layer on the first surface, forming a first conductive layer on the first surface (for example, placing the first conductive layer between the first surface and the dielectric layer), forming a second conductive layer on the second surface, and forming through-substrate interconnects connecting the first conductive layer to the second conductive layer. The method may also include bonding the first side of the cold plate to the back side of the device to define a coolant channel between them.

[0018] In one embodiment, a method for manufacturing an integrated cooling system may include forming a cold plate and bonding a first side of the cold plate to one side of a device to define a coolant channel between them, the bonding of which may include electrically coupling a first conductive layer to the device. The cold plate has a first side and a second side opposite to the first side, the first side may have a concave surface, a sidewall surrounding the concave surface and extending downward therefrom to define a cavity, and a plurality of support features disposed within the cavity. Forming the cold plate may include preparing a substrate having a first surface and a second surface opposite to the first surface, forming a plurality of conductive vias in the substrate, and forming a first side of the cold plate on the first surface, the first side having a first conductive layer and a dielectric layer on the first conductive layer. The method may include forming a second side of the cold plate on the second surface, the second side including a second conductive layer. Multiple conductive vias can start from the second side and terminate with a concave surface, electrically connecting the first conductive layer and the second conductive layer.

[0019] The above and other objects and advantages of the present disclosure will become apparent by considering the following detailed description together with the accompanying drawings.

Brief Description of the Drawings

[0020] [Figure 1A] It is a schematic plan view of an example of a system panel according to an embodiment of the present disclosure. [Figure 1B] It is a schematic partial cross-sectional side view of a device package mounted on a PCB according to an embodiment of the present disclosure. [Figure 2A] It is a schematic exploded isometric view of the device package of Figure 1B. [Figure 2B] It is a schematic cross-sectional view of the device package of Figure 1B. [Figure 3] It is a schematic cross-sectional view of an integrated cooling assembly having a power / ground supply network according to some embodiments of the present disclosure. [Figure 4] It is a schematic cross-sectional view of an integrated cooling assembly having a cold plate including laterally adjacent metallization layers according to some embodiments of the present disclosure. [Figure 5] It is a schematic cross-sectional view of a cold plate assembled using an upper portion and a lower portion according to some embodiments of the present disclosure. [Figure 6] It is a schematic cross-sectional view of some configurations of a power / ground supply network according to some embodiments of the present disclosure. [Figure 7] It is a diagram showing an exemplary process applicable for manufacturing one or more integrated cooling assemblies described in various embodiments of the present disclosure.

Modes for Carrying Out the Invention

[0021] The figures in this specification show various embodiments of the present disclosure for illustrative purposes only. It will be understood that additional or alternative structures, assemblies, systems, and methods may be implemented within the scope of the principles shown in the present disclosure.

[0022] As used herein, the term “substrate” means any workpiece, wafer, or article that provides a base material or support surface on which components, elements, devices, assemblies, modules, systems, or features of the heat-generating devices, packaging components, and cooling assembly components described herein can be formed. The term “substrate” also means a “semiconductor substrate” that provides a support material on which elements of semiconductor devices are fabricated or mounted, and any material layer, features, and / or electronic devices formed on, inside, or through therein.

[0023] As used herein, the term “layer” means a sheet of the same material type arranged on a surface or side (for example, on a substrate). As referred to herein, a layer can be formed in one or more steps belonging to the same forming process. In one general embodiment, one side of a layer abuts the surface on which the layer is placed. A layer can be conformal (for example, molded to abut a surface). As used herein, a layer can mean multiple regions of the same material type arranged on a surface. For example, a layer can be patterned into individual parts or regions. Specifically, a layer can be shown as a single part adjacent to an object in a cross-sectional side view, but can mean a continuous sheet of the same material type having a continuous region around the object (for example, when shown from a top-down view).

[0024] As described later, a semiconductor substrate as used herein generally has a "device side," such as the side on which semiconductor device elements like transistors, resistors, and capacitors are fabricated, and a "back side" opposite the device side. The term "active side" includes the device-side surface of the substrate and can be understood to include the device-side surface of the semiconductor substrate and / or any material layer formed thereon or extending outward therefrom, the surface of a device element or feature, and / or any opening formed thereon. Therefore, it can be understood that the (single or multiple) materials forming the active side can vary depending on the manufacturing and assembly stages of the device. Similarly, the term "non-active side" (opposite to the active side) includes the non-active side of the substrate at any stage of device manufacturing, including the surface of any material layer, any feature formed thereon or extending outward therefrom, and / or any opening formed thereon. Therefore, the terms "active side" or "non-active side" can include the respective surfaces of the semiconductor substrate at the start of device manufacturing and any surfaces formed during material removal, such as after substrate thinning operations. The terms “active side” and “inactive side” are also used to describe the surface of a material layer or feature formed on, within, or through a semiconductor substrate, depending on the device manufacturing or assembly stage, regardless of whether such material layer or feature ultimately exists in the manufactured or assembled device.

[0025] In this specification, spatially relative terms are used to describe relationships between elements, such as the relationships between substrates, heat-generating devices, cooling assembly components, device packaging components, and other feature parts described later. Unless otherwise specified, terms such as "above," "over," "upper," "upwardly," "outwardly," "on," "below," "under," "beneath," and "lower" are generally used to refer to the X, Y, and Z directions shown in the drawings. Therefore, it should be understood that the spatially relative terms used herein are intended to cover different orientations of the substrate and are not limited by the direction of gravity unless otherwise specified. Unless otherwise specified, terms describing relationships between elements, such as "disposed on," "embedded in," "coupled to," "connected by," "attached to," and "bonded to," can be used alone or in combination with spatial relative terms to include both relationships with intervening elements and direct relationships without intervening elements.

[0026] Unless otherwise specified, the term “cold plate” generally refers to a base plate that can be bonded to a semiconductor device, or a stack of base plates directly bonded to one another. A cold plate may include material layers and / or metallic features formed on or within the surface of the base plate or stack of base plates to facilitate direct dielectric bonding or hybrid bonding with the semiconductor device. Generally, the term “integrated cooling assembly” (ICA) refers to a cold plate attached to a semiconductor device to form a single piece using methods such as direct bonding, as described below. Direct bonding allows heat from the semiconductor device to be directly transferred to a coolant flowing between the cold plate and the semiconductor device. Unless otherwise specified, the device packages and cold plates described herein can be used with any selected fluid coolant, such as liquid, gas, and / or vapor-phase coolants. Therefore, these terms should not be interpreted as limiting the coolant to any single fluid phase.

[0027] Figure 1A is a schematic plan view of an example of a system panel 100 according to an embodiment of the present disclosure. Generally, the system panel 100 includes a printed circuit board, here referred to as a PCB 102, a plurality of device packages 201 mounted on the PCB 102, and a plurality of coolant lines 108 that fluidly connect each of the device packages 201 to a coolant source 110. The coolant can be supplied to each of the device packages 201 in any desired fluid phase, such as liquid, vapor, gas, or a combination thereof, and is assumed to be able to flow out of the device packages 201 in the same phase or a different phase. In some embodiments, the coolant is supplied to the device packages 201 and returned there as a liquid, and the coolant source 110 may include a heat exchanger or chiller to maintain the coolant at a selected temperature. In other embodiments, the coolant is supplied to the device packages 201 as a liquid, vaporizes within the device packages to become a liquid, and returns to the coolant source 110 as vapor. In these embodiments, the device package 201 can be fluidly coupled in parallel to the coolant source 110, which may include, or further include, a compressor (not shown) for condensing the received vapor into a liquid form.

[0028] Figure 1B is a schematic partial cross-sectional side view of a portion of the system panel 100 of Figure 1. As shown, each device package 201 is positioned within a socket 114 of the PCB 102 and connected to the socket 114 using a number of pins 116 or by other preferred connection methods such as solder bumps (not shown). The device package 201 can be seated within the socket 114 and secured to the PCB 102 using a mounting frame 106 and a number of fasteners 112, such as compression screws, collectively configured to exert a relatively uniform downward force on the upward edge of the device package 201. This uniform downward force ensures proper pin contact between the device package 201 and the socket 114.

[0029] Figure 2A is a schematic exploded isometric view of an example device package 201 according to an embodiment of the present disclosure. Figure 2B is a schematic cross-sectional view of the device package 201 cut along the line A-A' in Figure 2A. Generally, the device package 201 includes a package substrate 202, an ICA 203 (shown in Figure 2B) disposed on the package substrate 202, and a package cover 208 disposed on the periphery of the package substrate 202. The package cover 208 extends over the entire ICA 203 so that the ICA 203 is positioned between the package substrate 202 and the package cover 208. As shown, the device package 201 further includes a sealing material layer 222 that forms a coolant-impermeable barrier between the package cover 208 and the ICA 203. Coolant is supplied to the ICA 203 through an inlet / outlet opening 212 of the package cover 208 and a corresponding opening 222A formed through the sealing material layer 222. In some embodiments, the device package 201 may further include a support member 207 attached to the ICA 203 (shown by a dashed line in Figure 2B).

[0030] Generally, the package substrate 202 includes a rigid material such as an epoxy or resin-based laminate that supports the ICA 203 and the package cover 208. The package substrate 202 may include conductive features disposed within or on the rigid material that electrically couple the ICA 203 to a system panel such as the PCB 102.

[0031] Typically, ICA203 includes a semiconductor device, here device 204, and a cold plate 206 bonded to device 204. Here, device 204 includes an active side 218 on which device components such as transistors, resistors, and capacitors are formed on top or inside, and a non-active side opposite to the active side 218, here device back surface 220. As shown in the figure, the active side 218 is adjacent to and facing the package substrate 202. The active side 218 can be electrically connected to the package substrate 202 by using conductive bumps 219 encased in a first underfill layer 221 placed between device 204 and the package substrate 202. The first underfill layer 221 may contain a curing polymer resin or epoxy that provides mechanical support to the conductive bumps 219 and protects them from thermal fatigue.

[0032] Generally, the cold plate 206 includes a patterned side facing the device 204 and a opposite side facing the package cover 208. The patterned side includes a device-facing cavity comprising a base surface 209, side walls 211 surrounding the base surface 209, and a plurality of support features 224 positioned inside the side walls 211. For example, the support features 224 may include protruding features that extend away from the base surface 209. In some embodiments, the support features 224 may include protruding features having a width that traverses along the base surface 209. For example, one or more of the support features 224 may extend from a first opening of the inlet / outlet opening 212 to a second opening of the inlet / outlet opening 212 (for example, starting near the right side of the left-side opening 212 and ending near the left side of the right-side opening 212). When attached to the lower-positioned device 204, the base surface 209 forms the upper surface of the coolant channel 210, the side walls 211 form the inner circumference of the coolant channel 210, and the device back surface 220 forms the bottom surface of the coolant channel 210. Thus, the device back surface 220 is in direct thermal contact with the coolant flowing therethrough. Generally, the support feature 224 extends from the base surface 209 to the bonding interface with the device back surface 220. The support feature 224 provides structural support to the ICA 203 and increases heat transfer between them by disrupting the laminar flow at the interface between the coolant and the device back surface 220.

[0033] Here, coolant circulates through a coolant channel 210 that passes through the cold plate 206 and is shown here as an opening 206A, located between a downward-facing base surface 209 and an upward-facing surface opposite it. The opening 206A is in fluid communication with the inlet / outlet opening 212 of the package cover 208 through an opening 222A formed in the sealing layer 222 located between the package cover 208 and the package cover 208.

[0034] As described below, in some embodiments, the cold plate 206 can be patterned using an anisotropic etching process that inclines the surfaces of the sidewalls and support features 224 to form an angle of less than 90° with respect to the bonding surface of the device 204, for example. This anisotropic etching process gives the cross-section of the support features 224 a trapezoidal shape in which the width at each base surface 209 of the support features 224 is wider than the width at the interface with the device 204. Similarly, the sidewalls are also inclined away from the base surface 209, with the width at their bottoms being wider than the width at the interface with the device 204.

[0035] The inclined surface is desirable to enhance the stability of the sidewalls 211 and support features 224 during the manufacturing of the ICA203. If the base features are narrow, distortion and breakage may occur as the aspect ratio (ratio of height to width) increases. This added stability allows for a narrower field surface of the sidewalls 211 and a deeper coolant channel compared to a cold plate with orthogonal surfaces.

[0036] Here, the cold plate 206 is directly bonded to the device back surface 220, i.e., attached to the device back surface 220 without the use of intervening adhesive, so that the cold plate 206 and the device back surface 220 are in direct thermal contact. Generally, the package cover 208 includes one or more vertical or inclined sidewall portions 208A and an outer portion 208B that extends to and connects the sidewall portions 208A. The sidewall portions 208A extend upward from the periphery of the package substrate 202 and surround the device 204 and the cold plate 206 placed on it. The sidewall portions 208B are positioned to cover the cold plate 206 and are spaced apart from the cold plate 206 by a gap that is usually corresponding to the thickness of the sealing material layer 222. Coolant circulates through a coolant channel 210 through an inlet / outlet opening 212 formed through the outer portion 208B. In each embodiment described herein, the coolant line 108 can be attached to the device package 201 by using connector features formed on the package cover 208, such as threads formed on the side wall of the inlet / outlet opening 212 and / or a protruding feature 214 that surrounds the opening 212 and extends upward from the surface of the outer portion 208B.

[0037] Typically, the package cover 208 is formed of a semi-rigid or rigid material so that at least a portion of the downward force exerted on the package cover 208 by the mounting frame 106 (Figure 2) is transmitted to the support surface of the package substrate 202 and not to the cold plate 206 and device 204 below. In some embodiments, the package cover 208 is formed of a thermally conductive metal such as aluminum or copper. In some embodiments, the package cover 208 functions as a heat spreader that redistributes heat from one or more electronic components in a multi-component device package, as described later.

[0038] The sealing layer 222 forms an impermeable barrier between the ICA 203 and the package cover 208, preventing coolant from reaching and damaging the active side 218 of the device 204. In some embodiments, the sealing layer 222 includes a polymer or epoxy material that extends upward from the package substrate 202 and encloses and / or surrounds at least a portion of the device 204. In other embodiments, the sealing layer 222 may be located only between the upward surface of the cold plate 206 and the portion of the package cover 208 that covers the cold plate 206. In some embodiments, the sealing layer is formed of a molding compound, such as a thermosetting resin, which forms an airtight seal between the package cover 208 and the cold plate 206 during polymerization. Here, coolant is supplied to the cold plate 206 through an opening 222A located through the sealing layer 222. As shown in the figure, the opening 222A is aligned with the inlet / outlet opening 212 of the upper package cover 208 and the inlet / outlet opening 206A of the lower cold plate 206, respectively, to communicate with the fluid. Typically, the coolant line 108 is attached to the device package 201 by using connector features formed on the package cover 208, such as threads formed on the side wall of the inlet / outlet opening 212 and / or a protruding feature 214 that surrounds the inlet / outlet opening 212 and extends upward from the surface of the outer portion 208B.

[0039] The sealing layer 222 has the advantage of providing mechanical support that enhances system reliability and extends the useful life of the device package 201. For example, the sealing layer 222 can reduce mechanical stresses that could weaken the interfacial bonds and / or electrical connections between the electrical components of the device package 201, such as stresses caused by vibration, mechanical and thermal shocks, and / or fatigue resulting from repetitive thermal cycling. In some embodiments, the sealing layer 222 may be a thermally conductive material such as a polymer or epoxy having one or more thermally conductive additives such as solder (e.g., In), silver, graphite, and / or other forms of carbon (e.g., graphene or carbon nanoparticles). In some embodiments, the device package 201 further includes a support member 207 attached to the upward surface of the cold plate 206, the support member 207 may be formed of a rigid material such as a metal or ceramic plate that provides mechanical support to the cold plate 206. The support member 207 can be attached to the cold plate 206 using a direct bonding method or by using an intervening adhesive layer (not shown).

[0040] Figure 3 is a schematic cross-sectional view of ICA300, 350 having a power / grounding supply network according to some embodiments of the present disclosure. ICA300, 350 includes a cold plate attached to a device, between which coolant channels are defined as described with respect to Figures 1A to 2B. For example, ICA300 may include a device 204 and a cold plate 206. The cold plate may include a substrate, a first side, a second side, one or more conductive layers on each of the first and second sides, through-substrate vias (TSVs) interconnecting the conductive layers, a dielectric layer, and one or more conductive pads on the side facing the device. In this specification, the conductive layers, TSVs, and conductive pads may be collectively referred to as a supply network, power network, power / grounding supply network, grounding network, and back-side supply network, etc. In some embodiments, the conductive layers may extend around and / or along the sidewalls of the support features of the cold plate. In some embodiments, various parts of the cold plate may include materials having a low coefficient of thermal expansion (CTE).

[0041] In some embodiments, the supply network can be a continuous supply network. In addition to or instead of this, the supply network can also include separate network sections. Some network sections can be interconnected while remaining electrically isolated from other network sections. For example, a first network section can be used to supply power, and a second network section can be used to provide grounding. Each of the first and second network sections can include its own conductive layer, TSV, conductive pad, etc., which are electrically isolated from the other network sections. It is assumed that the network sections and parts thereof can be arranged in various configurations. As an illustrative example, some supply networks can be coupled to power sources, and some supply networks can be coupled to grounding. For example, rows of supply networks can be alternately coupled to power sources and grounding. For example, in a top-down view, the inner section may include the first supply network, and the outer section surrounding the inner section (e.g., a ring) may include the second supply network. In this example, the inner and outer sections can be separated by a non-conductive material placed between them. Several exemplary configurations are described with respect to Figures 3 to 6.

[0042] Each of the ICA300 and 350 includes a supply network as part of the cold plate. The supply network can enable the ICA to supply power or provide grounding through the back surface of the device package. For example, conductive wires (e.g., power and / or grounding wires) can be connected to the conductive layer on the back surface of the ICA through the side of the assembly, or such conductive wires can be arranged along the side of the device. The conductive layer on the back surface of the ICA can be coupled to an external source in various ways, and the examples described herein are intended to be non-limiting. The conductive layer on the back surface of the ICA may include a coating that is resistant to degradation and oxidation. The coating can be formed on the conductive layer before coupling to an external source. For example, the coating can be formed using electroless plating, sputtering, etc. Some material examples include Ni-based alloys such as Ni-P, NiV, and / or NiW. In some embodiments, the coating may include a thin dielectric layer (e.g., an oxide layer) covering the conductive layer. The coating can thinly cover the conductive layer to protect it from external exposure without significantly increasing the overall thickness of the ICA. For example, the coating can be 1-10% of the ICA thickness.

[0043] The device may include a device side 320 facing the cold plate, a device side 322, and a plurality of device vias 324. For example, device side 320 may be the back side of the device, and device side 322 may be the front side of the device opposite to device side 320. Device side 320 may be an inactive side of the device, such as the inactive side 220 of device 204. Device side 320 may include a protective coating or protective layer 321 exposed within the coolant channel. In various embodiments, the material type of the layer may be dielectric and therefore may be called a dielectric layer or dielectric coating. The protective coating or protective layer 321 may contain or have the same material type as the dielectric layer 313 on the first side 304 of the cold plate. For example, the dielectric layers 313 and 321 on each side 304 and 320 may be dielectric layers of different thicknesses. Dielectric layers may be referred to as dielectric layers in Figures 3 to 7 for illustrative purposes only, and these are intended to be non-limiting examples. The device side 322 can be the active side of a device, such as the active side 218 of device 204. The device side 322 can be electrically connected to the package substrate (e.g., package substrate 202), the second device, and / or the back-end-of-line (BEOL) layer using various connector types, including bumps, interconnects, vias, pads, and wires. Device vias 324 can connect the cold plate to the device, starting from the device side 320. For example, device vias 324 can include backside vias of the device. In some embodiments, device vias 324 can include blind vias that stop before reaching the device side 322, as shown in Figure 3. In some embodiments, device vias 324 can be through vias that terminate at the device side 322, for example, connecting to the second device on the opposite side of the first device. As described in the following paragraphs, the device vias 324 on the device side 320 electrically couple the device to the cold plate supply network.

[0044] In the ICA300, the cold plate may include a substrate 301, a side 302, a side 304, conductive layers 306 and 308 on the respective sides 302 and 304, through-substrate vias (TSVs) 310, dielectric layers 311 and 313 on the respective conductive layers 306 and 308, and a conductive pad 316. The TSV 310 electrically couples the conductive layers 306 and 308. The conductive pad 316 is positioned through the dielectric layer 313 and electrically couples the conductive layer 308 to the device. The dielectric layers 313 and 321 may include materials that are resistant to damage from coolant. In some embodiments, one or more of the dielectric layers 311, 313, and 321 may include oxide or nitride materials. In some embodiments, one or more of the dielectric layers 311, 313, and 321 may include a first dielectric material and a corrosion-resistant coating on the dielectric material. For example, the dielectric layer 311 may include a protective coating to protect it from the external environment. Some material examples for the dielectric layers 311, 313, and 321 include silicon and aluminum oxides and / or nitrides, such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, and combinations thereof.

[0045] In one embodiment, the conductive pad 316 is connected to an opposing pad of the device (for example, at the end of a device via 324). The conductive pad 316 can be directly bonded to the device via 324 at the bonding interface 318. In some embodiments, the cold plate can be bonded to the device via hybrid bonding at and around the bonding interface 318. Hybrid bonding can form multiple connections between the cold plate supply network and the device. For example, hybrid bonding can electrically couple one or more pads of the conductive layer 308 to the device via 324. For example, the cold plate may include a support feature portion (e.g., support feature portion 224) that protrudes and contacts the device side 320. The conductive pad 316 can be located at the bottom of the support feature portion to form the bonding interface 318. The bottoms of the support feature portion and the conductive pad 316 can be hybrid bonded to the corresponding portions of the device side 320. Each of the conductive layers can have a thickness of at least 0.5 μm and up to 20 μm. In some embodiments, the conductive layer may have a thickness in the range of about 3 to 4 μm. The conductive layer and / or parts thereof may have different thicknesses. For example, conductive layer 308 may have a thickness of about 4.4 μm, and conductive layer 306 may have a thickness of about 3 to 10 μm.

[0046] The cold plate may include inlet / outlet openings such as openings 312 and 314 of the ICA300. Openings 312 and 314 may be similar to inlet / outlet opening 212. For example, opening 312 may be installed in the coolant inlet line, and opening 314 may be installed in the coolant outlet line. It is assumed that the openings may have various inlet / outlet configurations and arrangements for circulating coolant through a coolant channel (e.g., coolant channel 210).

[0047] In some embodiments, the substrate 301 can function as a base layer to support the formation of a supply network. The substrate 301 has a first side and a second side, which are used to form sides 302 and 304, respectively. The substrate 301 may contain dielectric or insulating materials (e.g., structural Si, glass, polysilicon, boron-silicon, and / or artificial polymers such as reinforced polymers). For example, the second side of the substrate 301 may be patterned using an anisotropic etching process to form a support feature portion (e.g., support feature portion 224) having a trapezoidal cross-section. It should be understood that this example is not limiting and the support feature portion may have any cross-sectional shape (e.g., rectangular, elliptical, etc.) without departing from the teachings of this disclosure. For example, the support feature portion 224 may have a first cross-section (e.g., along line A-A') that is rectangular and a second cross-section (e.g., the side wall of the support feature portion 224 facing the X axis) that is trapezoidal. Conformal and / or nonconformal deposition techniques can be used to form subsequent layers on the substrate 301. For example, layer 311 may be a conformal coating. For example, a conductive layer 308 can be formed by depositing a conformal or nonconformal metal layer on a second side of the substrate 301. In embodiments in which the substrate 301 and / or supporting features include a low thermal conductivity (TC) material, the conductive layer can enhance heat dissipation.

[0048] Openings in the substrate 301 (or simply TSV openings) can be formed using any preferred technique (e.g., drilling, etching) that determines the parameters (shape, size, etc.) and placement of the TSV 310. A conductive layer of cold plate can be deposited on the substrate 301 or a portion thereof. In some embodiments, the conductive layers 306, 308, and TSV 310 can be formed from the same conductive process over one or more processing steps. In some embodiments, one or more barrier / adhesive layers (not shown) can be deposited before depositing the conductive layers. In some embodiments, a seed layer can be formed on the (one or more) barrier / adhesive layers, and the conductive layers 306, 308, and 310 can be plated from a preferred electroplating bath or electroless plating bath. In one embodiment, one or more of the layers 306, 308, and 310 are plated via an electroplating bath containing, for example, super-leveling additives (additives that induce bottom-up metal growth). After electrodeposition of the conductive layer, the conductive layer can be annealed at a temperature of, for example, 180°C or lower to stabilize the microstructure of the film. The conductive layer 306 can be planarized to remove selected portions. In some embodiments, conductive layers 306, 308, and 310 can be formed using 3D printing technology, for example, by using printed nanoparticles of a selected conductive metal. The printed conductive layer can be annealed at a temperature sufficient to extract and / or substantially remove impurities (e.g., compounding additives used in the printing process) and densify the conductive layer. The formed conductive layer can be planarized to remove one or more portions. In some applications, one or more portions can be removed by etching (e.g., wet etching).

[0049] TSVs can have a width of approximately 10 μm to approximately 300 μm. In some embodiments, TSVs have a width of approximately 50 μm to approximately 100 μm. Any number of TSVs can be included between conductive layers as part of a supply network. Note that TSV 310 having inclined sides is shown for illustrative purposes only. It is assumed that TSVs may have different parameters and arrangements than those described herein without departing from the teachings of this disclosure. For example, TSVs may have vertical sides in cross-section. For example, TSVs may have hexagonal ends in a top view. For example, TSVs may have various dimensions (e.g., height, width, etc.). For example, in a top view, TSVs may be arranged in a grid, star, concentric, and other patterns or combinations thereof. In some embodiments, TSVs can be partially filled. In this way, stress from the TSVs that may otherwise arise from conductive layers of sufficient thickness to fill the TSVs can be reduced. In a non-limiting example, TSVs may include conformal coatings on the TSV sidewalls. In some embodiments, one or more of the TSV310 may include a first portion and a conductive layer surrounding the first portion. For example, the first portion may include a material different from the conductive layer, such as a dielectric material, an insulating material, and / or a filler material. The conductive layer may be placed between the first portion and the substrate 301. In such embodiments, this conductive layer can electrically couple the conductive layers 306, 308.

[0050] The ICA350 can provide configurations for multiple supply networks. In some embodiments, the ICA350 may be advantageous by providing power and ground to neighboring or the same device region. The ICA350 includes conductive layers 352, 356, 358, 362, and vias 354, 360. In some embodiments, conductive layers 356 and 362 include portions of a single conductive layer patterned to be electrically isolated or insulated from each other. As shown, conductive layers 352, 358 are electrically isolated or insulated from each other by portions of layer 311 placed between them. For example, layer 311 may include SiO2 or other Si-based compounds.

[0051] Conductive layer 352 is connected to conductive layer 356 using via 354 to form a first supply network. Similarly, conductive layer 358 is connected to conductive layer 362 using via 360 to form a second supply network. Specifically, conductive layer 362 can extend along adjacent support features of the cold plate to connect to device vias at the bottom of each adjacent support feature to form a second supply network. The first and second supply networks can be coupled to a device using conductive pads connected to their respective device vias 370, 372. For example, the first supply network can be used to supply power to a device through the corresponding device via, including device via 370. For example, the second supply network can provide ground through device via 372. In the ICA 350, conductive layers 356 and 362 can be separated by portions such as a dielectric layer located on the side surface 304. It is assumed that multiple supply networks can be coupled to the same device region. For example, multiple supply networks can be configured to supply a specific amount of energy and / or a specific voltage to a device region. Each of multiple power grids can supply a portion of the power to the same device area. The ICA350 can be an example of such a configuration. As an illustrative example, the device area may require 1.4V. Three power grids can be coupled to the device area to supply a total of at least 1.4V.

[0052] Figure 4 is a schematic cross-sectional view of ICA400, 450 having a cold plate including laterally adjacent conductive layers, according to some embodiments of the present disclosure. In ICA400, the cold plate may include conductive layers 402, 406 separated by a portion 412. Conductive layer 402 may include areas located on the same side as areas of conductive layer 406. In ICA400, these areas are laterally adjacent and separated by a portion 412. In some embodiments, conductive layers 402, 406 are formed from conductive layers 306, 308, for example by etching, to form separate areas located on a substrate 301. Dielectric layers can be deposited in the gaps between the areas. The cold plate may include conductive pads 404 and 408, each connected to the device in a manner similar to that described with respect to ICA450. Each area including conductive pads 404 and 408 can be separated by a portion 414. In ICA400, conductive layers 402 and conductive pads 404 can form a first supply network. Similarly, the conductive layer 406 and the conductive pad 408 can form a second supply network. In this configuration, the first and second supply networks can be connected to adjacent device vias on the back surface of the device. In some embodiments, the ICA 400 may be advantageous in that it provides power and ground to a neighboring device region or the same device region, similar to the ICA 350.

[0053] ICA450 provides a configuration having multiple supply networks. In ICA450, the cold plate may include a first supply network having a conductive layer region 452. For example, region 452 may extend along the side wall of a support feature portion of the cold plate. Region 452 may be separated from region 454 of a second supply network of the cold plate by a portion 456. The supply networks may be selectively connected to device vias. In ICA450, region 454 can be electrically connected to multiple device vias on the back side of the device, while region 452 is separated from device via 458 by a separator 460 placed between them. In some embodiments, region 452 may be connected to a device 462, for example, in a conductive pad 464. For example, device 462 may include a passive component or another circuit component. For example, device 462 may be a chiplet. Device 462 may be mounted on the base surface of the cold plate in a coolant channel. In such embodiments, device 462 is connected to area 466 of another supply network. For example, area 452 can supply power to device 462, and area 466 can provide grounding to device 462. Device 462 may include a dielectric coating. The dielectric coating includes a material that prevents damage from the coolant in the coolant channel.

[0054] Figure 5 is a schematic cross-sectional view of cold plates 500, 550 assembled using upper and lower portions according to some embodiments of the present disclosure. The cold plate 500 may include a supply network as described herein. Specifically, the supply network includes conductive layers 502, 506 and vias 504, 508. The cold plate 500 includes a substrate 510, a dielectric layer 512, and support features 514. The upper portion of the cold plate 500 may include the conductive layers 502, 506, vias 504, substrate 510, and dielectric layer 512. The lower portion of the cold plate 500 may be collectively defined by the support features 514. In the cold plate 500, the substrate 510 may include a first material, and the support features 514 may also include the same first material. In some embodiments as described in the following paragraphs, the upper and lower portions of the cold plate 500 may be prepared separately and assembled to form the cold plate 500. For example, the upper portion of the cold plate 500 can be formed using a technique similar to the technique applied to form the cold plate of the ICA300.

[0055] The support feature 514 can be formed starting from a second substrate (not shown). For example, the support feature 514 can be formed by etching the second substrate. Vias 508 can be formed through the support feature 514. One side of the support feature 514 can be planarized and prepared for attachment to the upper portion of the cold plate. The support feature 514 is attached to the upper portion of the cold plate at location 516. In some embodiments, vias 508 can be formed on the support feature before attachment to the upper portion. For example, the support feature 514 can be attached to the device-facing side of the cold plate. In some embodiments, the support feature 514 can be directly bonded to location 516 using, for example, a direct dielectric bonding technique at location 516. Location 516 is shown as one configuration. It is assumed that the support feature 514 can be attached in various configurations to form the patterned side of the cold plate, for example, the cold plate 206. In some embodiments, one or more TSVs 508 are formed on the substrate 510 as blind TSVs and extend inward from the front. Excess conductive material used to fill the TSV openings can be removed by a planarization method. The TSVs 508 are exposed from the back surface of the substrate. The revealing process may include thinning, polishing, etching, and dielectric coating operations on the substrate 510 from the back surface. A dielectric layer 512 can be formed while the TSVs 508 are exposed from the back surface of the substrate 510. A conductive layer 506 can be formed over the dielectric layer 512. A dielectric layer 510 can be formed over the conductive layer 506, and the layer 510 can be patterned to form via cavities for conductive vias 504. The conductive vias 504 and conductive layer 502 can be formed sequentially or by a conductive layer coating operation such as a dual damascene metal plating operation. A portion of the conductive layer 502 can be selectively removed by a planarization method.The support feature portion 514 can be formed by creating a coolant cavity from the front side of the substrate using a wet etching method or a dry etching method that uses the dielectric layer 512 as an etching stop.

[0056] Via 504 electrically connects layers 502 and 506. Via 508 electrically connects layer 506 to the base of the support feature 514. In some embodiments, the conductive layer 506 includes a conductive segment that penetrates the dielectric layer 512 and connects to via 508 of the support feature 514. In addition to or instead of this, via 508 may also penetrate the dielectric layer 512 beyond the base surface of the cold plate and connect to the conductive layer 506. Via 508 can connect the supply network to the device in a similar manner to conductive pads (e.g., pads 316, 404, 408).

[0057] The cold plate 550 can be formed in a manner similar to that described with respect to the cold plate 500. Specifically, the cold plate 550 includes a substrate 552 and a support feature 554. In the cold plate 550, the substrate 552 may include a first material suitable for structural support (e.g., structural Si, glass, etc.). The support feature 554 may include a second material different from the first material. For example, the substrate 552 may include bulk Si, and the support feature 554 may be formed of glass. The cold plate 550 can provide an illustrative example of a cold plate having a mixed material for structural support. In some advantageous embodiments, the substrate 552 and / or support feature 554 containing an insulating material (e.g., glass) is inexpensive and therefore the number of intervening layers can be reduced. For example, a glass support feature does not require an insulating layer or a barrier layer. For example, a glass substrate can support a conductive layer without the intervening of a barrier layer.

[0058] Figure 6 is a schematic cross-sectional view of some configurations of a power / grounding supply network according to some embodiments of the present disclosure. Figure 6 includes a cold plate 600 and an ICA 650. The cold plate 600 includes a supply network 602, a substrate 606, and support features. The supply network 602 may include vias 604. The cold plate 600 may have upper and lower portions substantially similar to those of the cold plates 500, 550. The cold plate 600 or a portion thereof may be formed using techniques similar to those described with respect to the cold plates 500, 550.

[0059] In some embodiments, the support feature may include two or more parts. In addition to or instead of this, the parts of the support feature may be made of different materials. As an illustrative example in the cold plate 600, the support feature includes a first part 608 and a second part 610. Vias 604 can penetrate parts 608, 610 and terminate at the bottom of the support feature to connect to the device side. The support feature may include locations 612 for attaching the first part 608 to the second part 610 and / or the first part 608 to the base surface of the cold plate. In the cold plate 600, the first part 608 may be made of a different material from the substrate 606 and / or a different material from the second part 610. For example, the substrate 606 may be made of structural Si, the first part 608 may be made of glass, and the second part 610 may be made of structural Si or a third material. In some advantageous embodiments, the second part 610 may have a higher TC than the first part 608. Materials with a high TC (Toughness) promote the dispersion of localized hot spots at the device contact points to areas that are more easily exposed to the coolant, thus improving cooling efficiency.

[0060] The TSVs of cold plates 500, 550, and 600 can penetrate their respective support features. In addition to or instead of this, a conductive layer may extend around and / or along the sidewalls of the support features, as described with reference to Figures 3 and 4, for example. For example, in cold plate 600, a conductive layer such as layer 356 can be used instead of TSV 604.

[0061] In some embodiments, the supply network can be connected to the device using a redistribution layer (RDL) or interposer placed between the cold plate and the device. As an illustrative example, ICA650 includes a device, an RDL652 on the device, and a cold plate (e.g., as described in ICA400) on the RDL652. The device may include device vias 658, 660 connected to different points on the RDL652. The cold plate includes a first area 654 and a second area 656 on the side of the cold plate furthest from the device. The first area 654 can supply power and the second area 656 can provide ground (e.g., by connecting the areas to their respective sources). The RDL652 can combine power / ground areas to different parts of the device. For example, in one configuration, the first area 654 supplies power to the RDL652. The RDL652 can distribute the supplied power to device vias 658. The second area 656 provides grounding, and the RDL652 connects grounding to the device via 660. In some advantageous embodiments, the ICA650 allows the supply network area to be electrically coupled to any portion of the back surface of the device in a flexible configuration using the RDL652. For example, the RDL652 can provide an interconnection pitch of 5 μm or less to the supply network. In some embodiments, the interconnection pitch can be 2 μm or less. In some embodiments, the RDL can include various passive components (e.g., large-capacity capacitors). It is assumed that the RDL can be included in any embodiment described herein without departing from the teachings of this disclosure.

[0062] While this specification describes RDL and / or interposers, it is assumed that this interposing layer may be a layer enabling hybrid bonding in ICA and is intended to be non-limiting. Specifically, in some embodiments, the interposing layer can enable hybrid bonding. Referring to ICA650, for example, the substrate and / or support feature may include glass or another insulating material. In some embodiments, an adhesive coating may be applied to assist in the attachment of the cold plate to the device. For example, a dielectric layer may be deposited to support direct dielectric bonding. Alternatively, the interposing layer (e.g., RDL652) may provide a bonding interface suitable for hybrid bonding. For example, the interposing layer may bond the cold plate and the device via hybrid bonding.

[0063] Figure 7 shows an exemplary process 700 that can be applied to manufacture one or more ICAs as described in various embodiments of this disclosure. In 702, a substrate is prepared having a first side and a second side opposite to the first side. For example, the substrate can be prepared (e.g., etched, planarized, etc.) to support the formation of a cold plate including a feed grid. The first side may include a base side and a support feature. The first side can be used to define the patterning side when forming the cold plate. Specifically, the base side can define the base surface of the cold plate. The patterning side can be oriented to face the device side when mounting the cold plate to the device side. The second side can be used to define a second side of the cold plate, such as the back surface facing away from the device. In some embodiments, a support feature can extend from the base side (e.g., a support feature 514).

[0064] In 704, a plurality of conductive vias are formed on the substrate, starting from the second side of the substrate and ending on the base side. In some embodiments, some of the conductive vias can penetrate support features. In 706, first and second conductive layers are formed on the respective first and second sides of the substrate (e.g., using deposition and / or conductive techniques). The first and second conductive layers are connected by conductive vias. Specifically, the conductive layers can be connected by a plurality of conductive vias starting from the second side and ending on the base side. In some embodiments, a region of the conductive layer can be located on a portion of the second side to form laterally adjacent metallized regions (e.g., conductive layers 402, 406) on the same side. The regions on the second side can be connected to corresponding regions on the first side to form a supply network as described with respect to Figures 3 and 4.

[0065] In some embodiments, a dielectric layer can be deposited over the second conductive layer. A third conductive layer can be formed on the dielectric layer. Conductive vias can be extended and / or formed to connect the third conductive layer to a portion of the conductive vias in the substrate. Such a process can form layers 352 and 358 with a portion of layer 311 in between, thereby enabling the ICA350 to have first and second supply networks. Alternatively, a structure including conductive layer 352, a portion of layer 311, and conductive layer 358 can be formed on the second substrate. This structure can be placed on a substrate 301 having conductive vias to assemble the cold plate of the ICA350.

[0066] In 708, a cold plate having a patterned first side can be formed by depositing a dielectric layer on and / or on the first side of the substrate. The dielectric layer may include dielectric materials, insulating materials, and the like. The patterned first side may include a base surface and sidewalls of support features that collectively define a coolant channel between the cold plate and the device. Specifically, the dielectric layer may include a coating that prevents damage that would otherwise occur due to interaction with the coolant. The first conductive layer may include conductive pads (e.g., pads 316, 464). Parts of these dielectric layers may be planarized to expose the conductive pads. Specifically, the dielectric layer may be the same height as the conductive pads.

[0067] In 710, at least a portion of the patterned first side is prepared for bonding. A plurality of first conductive pads can be placed at the bottom of the support feature portion. Specifically, the bottom of the support feature portion can be prepared to form a bonding interface with the device side. The bonding interface may include a dielectric layer and conductive pads of the first conductive layer. In 712, the cold plate can be bonded to the semiconductor device and the first conductive layer can be electrically coupled to the semiconductor device. For example, the support feature portion of the patterned first side can be bonded to the back surface of the device at the bonding interface. Once the patterned first side of the cold plate is bonded to the semiconductor device, the base surface and / or the support feature portion can establish a coolant channel between them. The bonding may involve hybrid bonding between the patterned first side and the device side. In some embodiments, a plurality of second conductive pads can be placed on the base surface (e.g., pad 464). A second set of conductive pads and a patterned portion of the first side surrounding the conductive pads can be prepared for mounting a second device (e.g., device 462). Process 700 describes a method for manufacturing the embodiments described herein. It is assumed that the embodiments described herein can be manufactured using various techniques, preferred substitutes for the techniques described, and / or combinations thereof without departing from the teachings of this disclosure.

[0068] The embodiments described above are illustrative and not intended to limit. Those skilled in the art will understand that individual embodiments of the cooling assemblies, device packages, manufacturing processes, and / or methods described herein can be omitted, modified, combined, and / or rearranged without departing from the scope of this disclosure. Only the following claims are intended to limit the scope of this disclosure.

Claims

1. An integrated cooling assembly, A device having an active side and a reverse side positioned opposite the active side, A cold plate having a first side and a second side opposite to the first side, The cold plate comprises, the first side having a concave surface, a side wall surrounding the concave surface and extending downward from the concave surface to define a cavity, and a plurality of support features disposed within the cavity, the first side of the cold plate being attached to the back side of the device to define a coolant channel between them, and the cold plate is, A substrate having a first surface on the first side and a second surface on the opposite side from the first surface, A dielectric layer disposed on the first surface, A first conductive layer disposed between the first surface and the dielectric layer, A second conductive layer disposed on the second surface, A substrate through-connection portion connecting the first conductive layer and the second conductive layer, An integrated cooling assembly, further including the above.

2. The coefficient of thermal expansion (CTE) of the cold plate is approximately the same as that of the device. The integrated cooling assembly according to claim 1.

3. The cold plate contains Si, The integrated cooling assembly according to claim 1.

4. The second conductive layer includes a power plane or a ground plane. The integrated cooling assembly according to claim 1.

5. The cold plate is attached to the device by a direct hybrid bond formed between it and the device. The integrated cooling assembly according to claim 1.

6. The device is electrically connected to the first conductive layer directly by a hybrid bond. The integrated cooling assembly according to claim 5.

7. The plurality of support features and the side wall define the bonding interface with the device. The integrated cooling assembly according to claim 1.

8. The first conductive layer is electrically connected to the back side of the device through an opening in the dielectric layer, and the opening is located between the support feature and the back side of the device. The integrated cooling assembly according to claim 7.

9. The cold plate further includes a third conductive layer that is positioned to cover the second conductive layer and is electrically insulated from the second conductive layer. The first conductive layer has a first portion and a second portion electrically insulated from the first portion. The first portion is electrically connected to the second conductive layer, and the second portion is electrically connected to the third conductive layer through each of the substrate through-connectors of the substrate through-connectors. The integrated cooling assembly according to claim 7.

10. One of the second and third conductive layers includes a power plane, and the other of the second and third conductive layers includes a ground plane. The integrated cooling assembly according to claim 9.

11. The second conductive layer includes a power plane and a ground plane electrically insulated from the power plane. The first conductive layer includes a first portion electrically connected to the power plane and a second portion electrically connected to the ground plane. Each of the first and second portions is positioned between one of the support features and the device, and is electrically insulated from each other by a portion of the dielectric layer positioned between them. The integrated cooling assembly according to claim 7.

12. Each of the aforementioned plurality of support features has a width that decreases from the concave surface to the bonding interface. The integrated cooling assembly according to claim 7.

13. Each of the plurality of support features is hybrid bonded to the device at the bonding interface. The integrated cooling assembly according to claim 7.

14. Each of the plurality of support features is directly attached to the device by a dielectric bond. The integrated cooling assembly according to claim 7.

15. The substrate penetration interconnection portion has a lower height than the plurality of support feature portions. The integrated cooling assembly according to claim 7.

16. The substrate through-connection portion is positioned between the concave surface of the cavity and the second surface of the substrate. The integrated cooling assembly according to claim 7.

17. The side wall of the cold plate is inclined. The integrated cooling assembly according to claim 7.

18. The side wall is inclined at an angle of less than 90 degrees from the back side of the device. The integrated cooling assembly according to claim 17.

19. The side wall is inclined from the device at an angle greater than 90 degrees. The integrated cooling assembly according to claim 17.

20. The side wall is inclined from the device at an angle greater than 115 degrees. The integrated cooling assembly according to claim 19.

21. The substrate comprises a first material, and each of the plurality of support features comprises the first material. The integrated cooling assembly according to claim 7.

22. The first material contains Si, The integrated cooling assembly according to claim 21.

23. The substrate comprises a first material, and each of the plurality of support features comprises a second material different from the first material. The integrated cooling assembly according to claim 7.

24. Each of the plurality of support features includes (i) a first portion comprising a first material and (ii) a second portion comprising a second material different from the first material. The integrated cooling assembly according to claim 7.

25. The substrate is a semiconductor substrate, and the integrated cooling assembly is The aforementioned device is located on a package substrate, A package cover disposed on the package substrate and extending over the cold plate and the device, having an inlet opening and an outlet opening that penetrate the package cover, A material layer disposed between the package cover and the cold plate, The device package includes the following, and the coolant channel is in fluid communication with the inlet opening and the outlet opening. The integrated cooling assembly according to claim 1.

26. The substrate through-connection portion includes an interconnection portion where the first end is wider than the second end. The integrated cooling assembly according to claim 1.

27. The back side of the device includes a rewiring layer, and the rewiring layer includes an interconnection between the first conductive layer and the active side circuit of the device. The integrated cooling assembly according to claim 1.

28. The conductive layer and vias of the cold plate form a power / ground supply network, the bonding includes direct hybrid bonding, the direct hybrid bonding electrically couples the power / ground supply network, and conductive elements are arranged within the back side of the device, on the back side, and / or through the back side. The integrated cooling assembly according to claim 27.

29. The cold plate is bonded directly to the device without the use of an intervening adhesive. The integrated cooling assembly according to claim 27.

30. An integrated cooling assembly, A device having an active side and a reverse side positioned opposite the active side, A cold plate having a first side and a second side opposite to the first side, The cold plate comprises, the first side having a concave surface, a side wall surrounding the concave surface and extending downward from the concave surface to define a cavity, and a plurality of support features disposed within the cavity, the first side of the cold plate being attached to the back side of the device to define a coolant channel between them, and the cold plate is, A substrate having a first surface on the first side and a second surface on the opposite side from the first surface, A first dielectric layer disposed on the first surface, A first conductive layer disposed between at least a portion of the first surface and the first dielectric layer, A second conductive layer is disposed on the first dielectric layer, covering the first conductive layer, A second dielectric layer disposed on the second surface, A third conductive layer disposed between at least a portion of the second surface and the second dielectric layer, A fourth conductive layer is disposed on the second dielectric layer, covering the third conductive layer, One or more first substrate through-connection portions connecting the first conductive layer and the third conductive layer, One or more second substrate through-connection portions connecting the second conductive layer and the fourth conductive layer, An integrated cooling assembly, further including the above.

31. The conductive layer and vias of the cold plate form a power / ground supply network, the bonding includes direct hybrid bonding, the direct hybrid bonding electrically couples the power / ground supply network, and conductive elements are arranged within the back side of the device, on the back side, and / or through the back side. The integrated cooling assembly according to claim 30.

32. The cold plate is bonded directly to the device without the use of an intervening adhesive. The integrated cooling assembly according to claim 30.

33. An integrated cooling assembly, A device having an active side and a reverse side positioned opposite the active side, A cold plate having a first side and a second side opposite to the first side, The cold plate comprises, the first side having a concave surface, a side wall surrounding the concave surface and extending downward from the concave surface to define a cavity, and a plurality of support features disposed within the cavity, the first side of the cold plate being attached to the back side of the device to define a coolant channel between them, and the cold plate is, A substrate having a first surface on the first side and a second surface on the opposite side from the first surface, A dielectric layer disposed on the first surface, A first conductive layer is disposed between the first portion of the first surface and the dielectric layer, A second conductive layer is disposed between the second portion of the first surface and the dielectric layer, A third conductive layer disposed on the third portion of the second surface, A fourth conductive layer, separated from the third conductive layer, is disposed on the fourth portion of the second surface, One or more first substrate through-connection portions connecting the first conductive layer and the third conductive layer, One or more second substrate through-connection portions connecting the second conductive layer and the fourth conductive layer, An integrated cooling assembly, further including the above.

34. The conductive layer and vias of the cold plate form a power / ground supply network, the bonding includes direct hybrid bonding, the direct hybrid bonding electrically couples the power / ground supply network, and conductive elements are arranged within the back side of the device, on the back side, and / or through the back side. The integrated cooling assembly according to claim 33.

35. The cold plate is bonded directly to the device without the use of an intervening adhesive. The integrated cooling assembly according to claim 33.

36. A method for forming an integrated cooling assembly including a cold plate having a first side and a second side opposite to the first side, wherein the first side has a concave surface, a side wall surrounding the concave surface and extending downward from the concave surface to define a cavity, and a plurality of support features disposed within the cavity, the method is Bonding the device to the cold plate, comprising bonding the first side of the cold plate to the back side of the device to establish a coolant channel between them, wherein the cold plate is A substrate having a first surface on the first side and a second surface on the opposite side from the first surface, A dielectric layer disposed on the first surface, A first conductive layer disposed between the first surface and the dielectric layer, A second conductive layer disposed on the second surface, A substrate through-connection portion connecting the first conductive layer and the second conductive layer, Methods that further include this.

37. Bonding the device to the cold plate includes forming a plurality of electrical connections between the first conductive layer and the device. The method according to claim 36.

38. A method for forming an integrated cooling assembly, The method includes forming a cold plate having a first side and a second side opposite to the first side, wherein the first side has a concave surface, a side wall surrounding the concave surface and extending downward from the concave surface to define a cavity, and a plurality of support features disposed within the cavity, and forming the cold plate is A substrate-penetrating interconnection portion is formed between the first surface of the substrate and the second surface on the opposite side, Forming a first conductive layer on the first surface, Forming a dielectric layer on the first conductive layer, Forming a second conductive layer on the second surface, Bonding the first side of the cold plate to the back side of the device to establish a coolant channel between them, Methods that include...

39. Bonding the first side of the cold plate to the back side of the device includes forming a plurality of electrical connections between the first conductive layer and the device. The method according to claim 38.

40. The conductive layer and vias of the cold plate form a power / ground supply network, the bonding includes direct hybrid bonding, the direct hybrid bonding electrically couples the power / ground supply network, and conductive elements are arranged within the back side of the device, on the back side, and / or through the back side. The method according to claim 38.

41. The cold plate is bonded directly to the device without the use of an intervening adhesive. The method according to claim 38.

42. A method for forming an integrated cooling assembly including a device and a cold plate, wherein the cold plate has a first side and a second side opposite to the first side, the first side having a concave surface, a side wall surrounding the concave surface and extending downward from the concave surface to define a cavity, and a plurality of support features disposed within the cavity, the method is This includes forming the cold plate, and forming the cold plate is A plurality of conductive vias are formed on a substrate having a first surface and a second surface opposite to the first surface, The first side of the cold plate is formed on the first surface, including a first conductive layer and a dielectric layer on the first conductive layer. The second side of the cold plate, which includes a second conductive layer, is formed on the second surface. The method includes, wherein the plurality of conductive vias begin from the second side and terminate at the concave surface, and the plurality of conductive vias electrically connect the first conductive layer and the second conductive layer, A method further comprising bonding the first side of the cold plate to the device to establish a coolant channel between them, wherein the bonding includes electrically coupling the first conductive layer to the conductive elements of the device.

43. The conductive layer and vias of the cold plate form a power / ground supply network, the bonding includes direct hybrid bonding, the direct hybrid bonding electrically couples the power / ground supply network, and conductive elements are arranged inside, on, and / or through the back side of the device. The method according to claim 42.

44. The cold plate is bonded directly to the device without the use of an intervening adhesive. The method according to claim 42.

45. An integrated cooling assembly, The device and The device comprises a cold plate attached to the device, and the cold plate is circuit board and A first side comprising a first conductive layer and a dielectric layer disposed on the first conductive layer and on at least a portion of the substrate, A second side opposite to the first side, which includes a second conductive layer, A substrate through-connection portion connecting the first conductive layer to the second conductive layer, An integrated cooling assembly, including the above.

46. An integrated cooling assembly, The device comprises a device and a cold plate bonded to the device, wherein the cold plate is circuit board and The first side and, The second side is opposite to the first side, Including the first side, A first conductive layer and A second conductive layer, A first dielectric layer disposed on the first conductive layer, the second conductive layer, and at least a portion of the substrate, The second side includes, A third conductive layer, A second dielectric layer disposed on the third conductive layer, A fourth conductive layer disposed on the second dielectric layer, The cold plate includes, One or more first substrate through-connection portions connecting the first conductive layer to the third conductive layer, One or more second substrate through-connection portions connecting the second conductive layer to the fourth conductive layer, An integrated cooling assembly, further including the above.

47. The conductive layers on the first and second sides of the cold plate form a power / ground supply network, and the power / ground supply network is electrically coupled to conductive elements disposed within, on, and / or through the back side of the device by a direct hybrid bond formed between them. The integrated cooling assembly according to claim 46.

48. The cold plate is bonded directly to the device without the use of an intervening adhesive. The integrated cooling assembly according to claim 46.

49. An integrated cooling assembly, The device comprises a device and a cold plate bonded to the device, wherein the cold plate is circuit board and The first side and, The second side is opposite to the first side, Including the first side, A first conductive layer and A second conductive layer, A first dielectric layer disposed on the first conductive layer and the second conductive layer, The second side includes, A third conductive layer, A fourth conductive layer separated from the third conductive layer, The cold plate includes, One or more first substrate through-connection portions connecting the first conductive layer to the third conductive layer, One or more second substrate through-connection portions connecting the second conductive layer to the fourth conductive layer, An integrated cooling assembly, further including the above.

50. The conductive layers on the first and second sides of the cold plate form a power / ground supply network, and the power / ground supply network is electrically coupled to conductive elements disposed within, on, and / or through the back side of the device by a direct hybrid bond formed between them. The integrated cooling assembly according to claim 49.

51. The cold plate is bonded directly to the device without the use of an intervening adhesive. The integrated cooling assembly according to claim 49.

52. An integrated cooling assembly, A device having a back side containing a conductive layer, The cold plate bonded to the back side, An integrated cooling assembly comprising, wherein the cold plate includes an integrated network of conductive layers bonded to the conductive layer of the device, and the back side of the device and the side of the cold plate bonded to the back side define a coolant channel between them.

53. The integrated network of the conductive layer is configured to supply power and / or ground to the device. The integrated cooling assembly according to claim 52.

54. The integrated network of the conductive layers forms a power / ground supply network, and the power / ground supply network is electrically coupled to conductive elements arranged within, on, and / or through the back side of the device by direct hybrid bonds formed between them. The integrated cooling assembly according to claim 52.

55. The cold plate is bonded directly to the device without the use of an intervening adhesive. The integrated cooling assembly according to claim 52.

56. An integrated cooling assembly, A device having an active side and a reverse side positioned opposite the active side, A cold plate including a power / grounding supply network, An integrated cooling assembly comprising, wherein the cold plate has a first side and a second side opposite to the first side, the first side having a concave surface, a side wall surrounding the concave surface and extending downward from the concave surface to define a cavity, and a plurality of support features disposed within the cavity, the first side of the cold plate being bonded to the back side of the device by a direct hybrid bond, the direct hybrid bond connecting the power / ground supply network to conductive elements disposed within, on, and / or through the back side of the device.

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