Gas flow substrate support, processing chamber, and related methods and apparatus for semiconductor manufacturing.
The substrate support design with recessed features and angled flow openings addresses contamination and non-uniformity issues, enhancing semiconductor processing efficiency and component longevity.
Patent Information
- Application Number
- JP2025558701
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-12-14
- Filing Date
- 2024-01-17
- Publication Date
- 2026-05-13
AI Technical Summary
Substrate supports in semiconductor processing can cause unwanted deposition and contamination, leading to substrate damage and non-uniform film formation due to metal contaminants and film accumulation.
A substrate support design with recessed features and angled flow openings, along with lift pin openings, to manage gas flow and reduce contamination and deposition, enhancing thermal and deposition uniformity.
Reduces contamination and deposition on the substrate and chamber components, improves thermal and deposition uniformity, and extends component life, while minimizing substrate damage and downtime.
Smart Images
Figure 2026514694000001_ABST
Abstract
Description
Technical Field
[0001]
[0001] This disclosure relates to a gas flow substrate support for semiconductor manufacturing, a processing chamber, and related methods and apparatuses.
Background Art
[0002]
[0002] Semiconductor substrates are processed for various applications, including the manufacture of integrated circuit devices and microdevices. One way to process a substrate involves depositing a material, such as a semiconductor material or a conductive material, onto the upper surface of the substrate. For example, epitaxy is one deposition process that deposits films of various materials onto the surface of a substrate within a processing chamber. During processing, various parameters can potentially affect the uniformity of the material deposited on the substrate.
[0003]
[0003] However, the substrate support can cause unwanted deposition and / or unwanted contamination. For example, metal contaminants can potentially contaminate the substrate and / or wear the coating on the substrate support. As another example, a film can deposit in specific regions of components such as the substrate support and / or the back side of the substrate. The film and / or contaminants can accumulate and cause the substrate to fuse to the substrate support, which can potentially damage the substrate.
[0004]
[0004] Therefore, there is a need for improved apparatuses and methods in semiconductor processing.
Summary of the Invention
[0005]
[0005] This disclosure relates to a gas flow substrate support for semiconductor manufacturing, a processing chamber, and related methods and apparatuses.
[0006]
[0006] In one or more embodiments, a substrate support usable for semiconductor manufacturing includes a first outer surface, a ledge located inside the first outer surface and recessed relative to the first outer surface, and a pocket located inside the ledge and defining a recessed pocket surface relative to the ledge. The substrate support includes a plurality of first flow openings extending into the pocket surface, a plurality of second flow openings extending into the ledge, and a plurality of third flow openings extending into the first outer surface.
[0007]
[0007] In one or more embodiments, a substrate support usable for semiconductor manufacturing includes a first outer surface and a pocket that is located inside the first outer surface and defines a pocket surface that is recessed relative to the first outer surface. The substrate support includes one or more lift pin openings. At least one of the one or more lift pin openings includes an opening section having a diameter and a ledge that is recessed relative to the pocket surface by a first distance and extends by a second distance. The method according to claim 1, wherein the sum of the first distance and the second distance is less than the diameter. At least one of the one or more lift pin openings includes a hole that extends relative to the ledge.
[0008]
[0008] In one or more embodiments, a processing chamber usable for semiconductor manufacturing includes one or more side walls, a window defining at least partially the processing space, one or more heat sources operable to heat the processing space, and a substrate support disposed within the processing space. The substrate support includes a first outer surface, a ledge disposed inside the first outer surface and concave with respect to the first outer surface, and a pocket disposed inside the ledge and defining a pocket surface concave with respect to the ledge. The substrate support includes a plurality of second flow openings extending into the ledge, a plurality of third flow openings extending inside the first outer surface, and one or more lift pin openings. At least one of the one or more lift pin openings includes an opening section having a diameter and a ledge that is concave with respect to the pocket surface by a first distance and extends by a second distance. The sum of the first distance and the second distance is less than the diameter.
[0009]
[0009] To enable a detailed understanding of the above-described features of the Disclosure, a more specific description of the Disclosure, which has been briefly summarized above, can be obtained by referring to embodiments. Some of these embodiments are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered to limit the scope of the Disclosure, and other equally valid embodiments are also permissible. [Brief explanation of the drawing]
[0010] [Figure 1] This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments. [Figure 2] This is a schematic top view of a substrate support according to one or more embodiments. [Figure 3] This is a schematic lateral cross-sectional view along section 3-3 of the substrate support shown in Figure 2, according to one or more embodiments. [Figure 4] This is a schematic lateral cross-sectional view along section 4-4 of the substrate support shown in Figure 2, according to one or more embodiments. [Figure 5] This is a schematic block diagram of a substrate processing method for semiconductor manufacturing according to one or more embodiments. [Modes for carrying out the invention]
[0011]
[0015] For ease of understanding, the same reference numerals were used to indicate identical elements common to the figures where possible. It is assumed that elements and features of one embodiment can be usefully incorporated into other embodiments without further description.
[0012]
[0016] This disclosure relates to a gas-flow substrate support, a processing chamber, and related methods and apparatus for semiconductor manufacturing.
[0013]
[0017] Figure 1 is a schematic side cross-sectional view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is used to grow an epitaxial film on a substrate 102. The processing chamber 100 generates a crossflow of precursor across the upper surface 150 of the substrate 102. The processing chamber 100 is shown under the processing conditions in Figure 1.
[0014]
[0018] The processing chamber 100 includes an upper body 156, a lower body 148 positioned below the upper body 156, and a flow module 112 positioned between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form the chamber body. Inside the chamber body are a substrate support 106, an upper window 108 (such as an upper dome), a lower window 110 (such as a lower dome), and one or more heat sources 141, 143. One or more heat sources 141, 143 include a plurality of upper heat sources 141 and a plurality of lower heat sources 143. In one or more embodiments, the upper heat source 141 includes an upper lamp, and the lower heat source 143 includes a lower lamp. This disclosure is intended to show that other heat sources may be used (in addition to or instead of the lamps) for the various heat sources described herein. For example, various heat sources described in this book may include resistance heaters, light-emitting diodes (LEDs), and / or lasers.
[0015]
[0019] A substrate support 106 is positioned between the upper window 108 and the lower window 110. The substrate support 106 supports the substrate 102. In one or more embodiments, the substrate support 106 includes a susceptor. Other substrate supports (e.g., including a substrate carrier and / or one or more ring segments supporting one or more outer regions of the substrate 102) are contemplated by this disclosure. A plurality of upper heat sources 141 are positioned between the upper window and the lid 154. The plurality of upper heat sources 141 form part of an upper heat source module 155.
[0016]
[0020] Multiple lower heat sources 143 are positioned between the lower window 110 and the floor 152. The multiple lower heat sources 143 form part of the lower heat source module 145. The upper window 108 is an upper dome and / or is made of an energy-transferring material such as quartz. The lower window 110 is a lower dome and / or is made of an energy-transferring material such as quartz.
[0017]
[0021] A processing space 136 and a purge space 138 are formed between the upper window 108 and the lower window 110. The processing space 136 and the purge space 138 are part of the internal space that is at least partially defined by the upper window 108, the lower window 110, and one or more liners 111, 163. In one or more embodiments, the processing space 136 is the processing space. One or more liners 111, 163 are located inside the chamber body.
[0018]
[0022] The internal space has a substrate support 106 disposed therein. The substrate support 106 includes an upper surface on which the substrate 102 is placed. The substrate support 106 is attached to the shaft 118. In one or more embodiments, the substrate support 106 is connected to the shaft 118 via one or more arms 119 connected to the shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that move and / or adjust the shaft 118 and / or the substrate support 106 within the processing space 136.
[0019]
[0023] The substrate support 106 may include lift pin openings 107 located therein. Each lift pin opening 107 is sized to accommodate lift pins 132 for lifting the substrate 102 from the substrate support 106 before or after the deposition process is performed. The lift pins 132 may rest on lift pin stops 134 when the substrate support 106 is lowered from the processing position to the moving position. The lift pin stops 134 may include a plurality of arms 139 attached to a shaft 135.
[0020]
[0024] The flow module 112 includes one or more gas inlets 114 (e.g., multiple gas inlets), one or more purge gas inlets 164 (e.g., multiple purge gas inlets), and one or more gas exhaust ports 116. The one or more gas inlets 114 and the one or more purge gas inlets 164 are located on the opposite side of the flow module 112 from the one or more gas exhaust ports 116. A preheating ring 117 is located below the one or more gas inlets 114 and the one or more gas exhaust ports 116. The preheating ring 117 is located above the one or more purge gas inlets 164. The preheating ring 117 may include a complete ring or one or more ring segments. One or more liners 111, 163 are located on the inner surface of the flow module 112 to protect the flow module 112 from reactive gases used during the deposition and / or cleaning processes. One or more gas inlets 114 and one or more purge gas inlets 164 are arranged to allow one or more processing gases P1 and one or more purge gases P2 to flow parallel to the upper surface 150 of the substrate 102 located in the processing space 136. The gas inlets 114 are fluidically connected to one or more processing gas sources 151 and one or more cleaning gas sources 153. One or more purge gas inlets 164 are fluidically connected to one or more purge gas sources 162. One or more gas exhaust ports 116 are fluidically connected to an exhaust pump 157. One or more process gases P1 supplied using one or more process gas sources 151 may contain one or more reactive gases (e.g., one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (e.g., one or more of nitrogen (N2) and / or hydrogen (H2)). One or more purge gases P2 supplied using one or more purge gas sources 162 may contain one or more inert gases (e.g., one or more of argon (Ar), helium (He), and / or nitrogen (N2)). One or more scrubbing gases supplied using one or more scrubbing gas sources 153 may contain one or more of hydrogen (H) and / or chlorine (Cl).In one or more embodiments, one or more process gases P1 include silicon phosphide (SiP) and / or phosphorus (PH3), and one or more cleaning gases include hydrochloric acid (HCl).
[0021]
[0025] One or more gas outlets 116 are further connected to an exhaust system 109 or include the exhaust system 109. The exhaust system 109 fluidly connects one or more gas outlets 116 and an exhaust pump 157. The exhaust system 109 can be useful when depositing a layer on the substrate 102 while controlling the layer. The exhaust system 109 is disposed on the opposite side of the flow module 112 in the processing chamber 100.
[0022]
[0026] The processing chamber 100 includes one or more liners 111, 163 (e.g., a lower liner 111 and an upper liner 163). The flow module 112 (which can be at least a part of the sidewall of the processing chamber 100) includes one or more gas inlets 114 that are in fluid communication with the processing space 136. One or more gas inlets 114 are in fluid communication with one or more flow gaps between the upper liner 163 and the lower liner 111. One or more second gas inlets 175 are in fluid communication with one or more inlet openings 183 of the upper liner 163.
[0023]
[0027] During a deposition operation (e.g., an epitaxial growth operation), one or more process gases P1 flow through one or more gas inlets 114, through one or more gaps, into the processing space 136, and flow over the substrate 102.
[0024]
[0028] The present disclosure also contemplates that, during the deposition operation, one or more purge gases P2 can be supplied to the purge space 138 (via one or more purge gas inlets 164) and discharged from the purge space 138. The one or more purge gases P2 flow simultaneously with the flow of the one or more process gases P1. The one or more process gases P1 are exhausted through one or more gas outlets 116 through a gap between the upper liner 163 and the lower liner 111. The one or more purge gases P2 can be exhausted through one or more outlet openings and through the same one or more gas outlets 116 as the one or more process gases P1. The present disclosure contemplates that the one or more purge gases P2 can be separately exhausted through one or more second gas outlets separated from the one or more gas outlets 116.
[0025]
[0029] During the cleaning process, one or more cleaning gases flow into the processing space 136 through one or more gas inlets 114 and through one or more gaps (between the upper liner 163 and the lower liner 111).
[0026]
[0030] The processing system includes one or more sensor devices 195, 196, 197, 198 (e.g., temperature sensors) configured to measure parameters (e.g., temperature) within the processing chamber 100. In one or more embodiments, one or more temperature sensor devices 195, 196, 197, 198 include a central sensor device 196 and one or more outer sensor devices 195, 197, 198. A controller 190 (described later) can control one or more sensor devices 195, 196, 197, 198 and can use at least one of the sensor devices 195, 196, 197, 198 to perform a method(s) for analyzing the uniformity of substrate processing. In one or more embodiments, one or more sensor devices 195, 196, 197, 198 each include a sensor containing one or more of silicon (Si), carbon (C), gallium (Ga), and / or nitrogen (N). In one or more embodiments, one or more sensor devices 195, 196, 197, 198 each include a silicon sensor, a silicon carbide (SiC) sensor, and / or a gallium nitride (GaN) sensor. In one or more embodiments, each sensor device 195, 196, 197, 198 is an optical sensor such as a pyrometer and / or an optical pyrometer. The disclosure intends that sensor devices other than pyrometers may be used, and / or that one or more of the sensor devices 195, 196, 197, 198 may measure characteristics other than temperature (such as measurement characteristics).
[0027]
[0031] In one or more embodiments, the sensor devices 195, 196, 197, 198 include one or more upper sensor devices 196, 197, 198 positioned above the substrate 102 and adjacent to the lid 154, and one or more lower sensor devices 195 positioned below the substrate 102 and adjacent to the floor 152. The disclosure intends that at least one of the one or more lower sensor devices 195 can be vertically aligned below at least one of the upper sensor devices 196, 196, 197 (e.g., outer sensor device 197).
[0028]
[0032] Each of the sensor devices 195, 196, 197, and 198 may be a single-wavelength sensor device or a multi-wavelength (such as dual-wavelength) sensor device. In one or more embodiments, the system including the processing chamber 100 includes any one, any two, or any three of the four illustrated sensor devices 195, 196, 197, and 198. In one or more embodiments, the processing chamber 100 includes one or more additional sensor devices in addition to the sensor devices 195, 196, 197, and 198. In one or more embodiments, the processing chamber 100 may include sensor devices positioned and / or oriented differently from the illustrated sensor devices 195, 196, 197, and 198.
[0029]
[0033] As shown in the figures, the controller 190 communicates with the processing chamber 100 and is used to control processes and methods, such as the operation of the methods described herein (e.g., Method 500). The controller 190 is configured to receive data or input as sensor readings from sensors (e.g., one or more of the sensor devices 195, 196, 197, 198). The sensor devices may include, for example, a sensor device for monitoring the growth of a layer(s) on the substrate 102, and / or a sensor device for monitoring the temperature of the substrate 102, the substrate support 106, and / or the liners 111, 163. As described, one or more sensor devices may include, for example, pyrometers.
[0030]
[0034] The controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), a memory 191 containing instructions, and support circuitry 192 for the CPU 193. The controller 190 controls various items directly or via other computers and / or controllers. In one or more embodiments, the controller 190 is communicably connected to a dedicated controller, and the controller 190 functions as a central controller.
[0031]
[0035] The controller 190 is any form of general-purpose computer processor used in an industrial environment to control various board processing chambers and devices, as well as subprocessors on or within them. Memory 191, or non-transient computer-readable medium, is one of readily available memory (e.g., random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic memory (SDRAM) (e.g., DDR1, DDR2, DDR3, LPDDR3, DDR4, LPDDR4, etc.), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other local or remote digital storage. The support circuit 192 of the controller 190 is connected to the CPU 193 to support the CPU 193. The support circuit 192 includes cache, power supply, clock circuit, input / output circuit and This includes subsystems, etc. Operating parameters (e.g., power applied to heat sources 141, 143, cleaning recipes, and / or processing recipes) and operations are stored in memory 191 as software routines that are executed or called to transform the controller 190 into a purpose-specific controller that controls the operation of the various chambers / modules described herein. The controller 190 is configured to perform any of the steps described herein. When the instructions stored in memory are executed, they cause the processing chamber 100 to perform one or more of the steps described herein (such as one or more steps of Method 500). The controller 190 and the processing chamber 100 are at least part of a system for processing substrates.
[0032]
[0036] The various operations described herein can be performed automatically using the controller 190, or can be performed automatically or manually using specific operations performed by the user.
[0033]
[0037] The controller 190 is configured to control power to the heat sources 141, 143 passing through the processing chamber 100 by providing an output for control of sensor devices 195, 196, 197, 198, an upper heat source 141, a lower heat source 143, a processing gas source 151, a purge gas source 162, a motion assembly 121, and / or an exhaust pump 157.
[0034]
[0038] Figure 2 is a schematic top view of a substrate support 200 according to one or more embodiments. The substrate support 200 can be used as the substrate support 106 shown in Figure 1.
[0035]
[0039] The substrate support 200 includes a first outer surface 201 and a ledge 203 located inside the first outer surface 201 and recessed relative to the first outer surface 201. In one or more embodiments, the first outer surface 201 is the top surface. The substrate support 200 includes a pocket 205 located inside the ledge 203 and defining a pocket surface 207 recessed relative to the ledge 203. The substrate support 200 includes a plurality of first flow openings 211 (e.g., first gas openings) extending into the pocket surface 207, a plurality of second flow openings 212 (e.g., second gas openings) extending into the ledge 203, and a plurality of third flow openings 213 (e.g., third gas openings) extending into the first outer surface 201. The substrate support 200 includes a plurality of lift pin openings 215 extending into the pocket surface 207. The second flow opening 212 and the third flow opening 213 are arranged along circular rows, respectively. The first flow opening 211 is arranged along multiple rows. In one or more embodiments, the rows are diagonal rows. The diagonals may be, for example, part of a hexagonal ring. In one or more embodiments, the rows are circular rows, such as circular rows concentric with each other. In one or more embodiments, one of the first flow openings 211 is located inward in the center of the row. In one or more embodiments, the second flow opening 212 is located radially outward of the first flow opening 211, and the third flow opening 213 is located radially outward of the second flow opening 212.
[0036]
[0040] Figure 3 is a schematic side cross-sectional view along section 3-3 of the substrate support 200 shown in Figure 2, according to one or more embodiments.
[0037]
[0041] The ledge 203 of the substrate support 200 is oriented at a first angle A1 with respect to the plane of the lower end of the ledge 203. In one or more embodiments, the ledge 203 has an average surface roughness (Ra) of less than 5 microns, for example, in the range of 3.0 to 3.5 microns. In one or more embodiments, the first angle A1 is oblique. In one or more embodiments, the first angle A1 is in the range of 0 to 5 degrees, for example, about 3 degrees. The ledge is configured to support the substrate 102 (shown as a ghost in Figure 3) during the epitaxial deposition process in which a film is deposited on the substrate. In one or more embodiments, the back side of the substrate 102 covers the upper end of the second flow opening 212 when the substrate 102 is supported by the ledge 203. In one or more embodiments, the film deposited on the substrate 102 contains silicon and / or germanium. In one or more embodiments, the film contains silicon carbide. In one or more embodiments, the substrate support 200 is formed from one or more metals (such as aluminum and / or stainless steel) and / or one or more ceramics. In one or more embodiments, the substrate support 200 is formed from silicon carbide and / or silicon carbide-coated graphite. Multiple second flow openings 212 are oriented at a second angle A2 with respect to the plane of the lower end of the pocket surface 207. In one or more embodiments, the second angle A2 is oblique. The second angle A2 is 20 degrees or more. In one or more embodiments, the second angle A2 is in the range of 20 to 90 degrees, for example, in the range of 50 to 60 degrees. In one or more embodiments, the second angle A2 is about 55 degrees. In one or more embodiments, the substrate support 200 includes a susceptor.
[0038]
[0042] The upper end of the ledge 203 is located at a first depth DE1 relative to the first outer surface 201, and the lower end of the ledge 203 is located at a second depth DE2 relative to the first depth DE1. The upper end of the pocket surface 207 is located at a third depth DE3 relative to the lower end of the ledge 203, and the lower end of the pocket surface 207 is located at a fourth depth DE4 relative to the upper end of the pocket surface 207. In one or more embodiments, the third depth DE3 is a first depth ratio of the second depth D2, and the first depth ratio is in the range of 0.09 to 0.4. In one or more embodiments, the fourth depth DE4 is approximately equal to the third depth DE3 (e.g., within a difference of 5% or less). In one or more embodiments, the first depth DE1 is in the range of 0.5 mm to 1.0 mm, for example, 0.6 mm to 1.0 mm. In one or more embodiments, the second depth DE2 is in the range of 0.2 mm to 0.44 mm, for example, 0.2 mm to 0.4 mm, for example, 0.25 mm to 0.35 mm.
[0039]
[0043] In one or more embodiments, the third depth DE3 is 0.1 mm or less, for example, in the range of 0.03 mm to 0.1 mm. In one or more embodiments, the fourth depth DE4 is 0.1 mm or less, for example, in the range of 0.03 mm to 0.1 mm.
[0040]
[0044] A gas (e.g., one or more purge gases P2) can flow from below the substrate support 106 through the third flow opening 213 and the second flow opening 212. The gas can be supplied to the space 255 or discharged from the space 255 through the first flow opening 211.
[0041]
[0045] The substrate support 200 facilitates the benefit of reducing undesirable deposits, for example, on the inner wall 216 of the substrate support 200, the ledge 203, and / or the pocket surface 207, and / or the back side of the substrate 102 during processing. As an example, the first angle A1, the second A2 of the second flow opening 312, and the third flow opening 313 facilitate the stability of the gas flow of one or more purge gases P1 and one or more processing gases P1, reducing or eliminating the possibility of the substrate 102 fusing to the substrate support 200 and reducing or eliminating the possibility of the substrate 102 being damaged. The first angle A1, the second A2 of the second flow opening 312, and the third flow opening 313 also facilitate the reduction or elimination of contamination of the substrate support 200 and / or the substrate 102.
[0042]
[0046] Figure 4 is a schematic side cross-sectional view along section 4-4 of the substrate support shown in Figure 2, according to one or more embodiments.
[0043]
[0047] At least one of the one or more lift pin openings 215 of the substrate support 200 (for example, one, two, or all three of the lift pin openings 215 shown in Figure 2) includes an opening 231 having a diameter D1. In one or more embodiments, the diameter D1 is in the range of 5.3 mm to 5.8 mm, for example, in the range of 5.5 mm to 5.8 mm, for example, about 5.55 mm or about 5.75 mm. At least one of the one or more lift pin openings 215 includes a ledge 233 that is recessed by a first distance DS1 from the pocket surface 207 and extends by a second distance DS2 (for example, downward into the substrate support 200). The sum of the first distance DS1 and the second distance DS2 is less than the diameter D1. At least one of the one or more lift pin openings 215 includes a hole 235 extending relative to the ledge 233. The hole 235 extends a third distance DS3 to the second outer surface 238 (e.g., the bottom surface) of the substrate support 200. In one or more embodiments, the ledge 233 defines a third angle A3 which is at least 80 degrees. In one or more embodiments, the third angle A3 is in the range of 80 to 100 degrees, for example, about 90 degrees.
[0044]
[0048] At least one of the one or more lift pin openings 215 includes an arched surface 239 along its inner edge. The arched surface 239 has a radius 240. In one or more embodiments, the sum of a first distance DS1 and a second distance DS2 is in the range of 2.7 mm to 3.2 mm. This sum can define the depth of the pocket. In one or more embodiments, the sum is a first ratio of the diameter D1, and the first ratio is in the range of 0.45 to 0.65, for example, 0.45 to 0.60. In one or more embodiments, the radius 240 is in the range of 0.1 mm to 0.5 mm, for example, 0.2 mm to 0.3 mm. In one or more embodiments, the radius 240 is approximately 0.25 mm. In one or more embodiments, the radius 240 is a second ratio of the diameter D1, and the second ratio is 0.1 or less, such as in the range of 0.1 to 0.1.
[0045]
[0049] The lift pin 132 is sized and molded to be positioned in at least one of the one or more lift pin openings 215. The head 133 of the lift pin 132 has a second diameter D2. In one or more embodiments, the second diameter D2 is a third ratio of the diameter D1, and the third ratio is 0.70 or less. In one or more embodiments, the lift pin is formed of glassy carbon. In one or more embodiments, the second diameter D2 is in the range of 3.0 mm to 3.6 mm.
[0046]
[0050] The sum of the first distance DS1 and the second distance DS2 is the fourth ratio of the second diameter D2. In one or more embodiments, the fourth ratio is in the range of 0.85 to 0.95, for example, in the range of 0.87 to 0.93. The first diameter D1 is the fifth ratio of the second diameter D2. In one or more embodiments, the fifth ratio is in the range of 1.45 to 1.95, for example, in the range of 1.55 to 1.95, for example, in the range of 1.59 to 1.85. The radius 240 is the sixth ratio of the second diameter D2. In one or more embodiments, the sixth ratio is in the range of 0.065 to 0.085, for example, in the range of 0.069 to 0.084. The hole 235 has a third diameter D3. In one or more embodiments, the third diameter D3 is the seventh ratio of the first diameter D1, where the seventh ratio is at least 1.3, for example, 1.5 or more, for example, 1.6 or more. In one or more embodiments, the third diameter D3 is in the range of 3.6 mm to 4.0 mm, for example, about 3.8 mm.
[0047]
[0051] The lift pin openings 215 facilitate the reduction or elimination of erosion of the substrate support 200 (e.g., reduction or elimination of erosion of silicon carbide on the substrate support 200), and / or the reduction or elimination of contamination of the lift pins 132, substrate 102 and / or substrate support 200 (e.g., reduction or elimination of shadowing effect). The lift pin openings 215 also facilitate improved thermal uniformity and deposition uniformity of the substrate support 200 and substrate 102 being processed.
[0048]
[0052] Figure 5 is a schematic block diagram of a substrate processing method 500 for semiconductor manufacturing according to one or more embodiments.
[0049]
[0053] Step 502 of Method 500 includes heating a substrate placed on a substrate support within the processing space of a processing chamber. In one or more embodiments, the substrate is heated to a target temperature. In one or more embodiments, the target temperature is 800°C or higher, for example, 1,000°C or higher. Other target temperatures are also possible.
[0050]
[0054] Step 504 includes flowing one or more processing gases over the substrate.
[0051]
[0055] Step 506 includes depositing one or more layers on the substrate.
[0052]
[0056] The advantages of this disclosure include, for example, reduced or eliminated contamination (e.g., substrate and / or chamber components), more targeted deposition (e.g., reduced or eliminated deposition on chamber components and / or the back surface of the substrate), improved thermal and deposition uniformity, reduced or eliminated component wear, increased component life (e.g., substrate supports and lift pins), increased throughput, increased number of substrates processed by the clean cycle, reduced or eliminated substrates to fuse, reduced or eliminated substrate damage, and reduced machine downtime. Such advantages can be further enhanced, for example, for processing parameters with higher intensity (e.g., processing temperatures of 800 degrees Celsius or higher, e.g., 1,000 degrees Celsius or higher).
[0053]
[0057] It is assumed that one or more embodiments disclosed herein may be combined. For example, one or more embodiments, features, components, operations, and / or characteristics of the processing chamber 100, controller 190, substrate support 106, substrate support 200, flow openings 211-213, lift pin opening 215, and / or method 500 may be combined. Furthermore, it is assumed that one or more embodiments disclosed herein may include some or all of the aforementioned advantages.
[0054]
[0058] While the above description applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure can be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is defined by the following claims.
[0055]
[0059] Certain embodiments and features are described using sets of upper and lower numerical bounds. Unless otherwise indicated, it should be recognized that the range is assumed to include any pair of values (e.g., any lower value and any upper value, any two lower values, and / or any two upper values).
Claims
1. A substrate support that can be used in semiconductor manufacturing, The first outer surface and A ledge positioned on the inside of the first outer surface and recessed relative to the first outer surface, A pocket is located inside the ledge and defines a pocket surface that is recessed relative to the ledge, A plurality of first flow openings extending within the pocket surface, A plurality of second flow openings extending within the ledge, Multiple third flow openings extending to the first outer surface and A substrate support comprising the above.
2. The substrate support according to claim 1, further comprising a plurality of lift pin openings extending into the pocket surface.
3. The substrate support according to claim 1, wherein the ledge is oriented at a certain angle with respect to the plane of the lower end of the ledge, and the angle is within the range of 0 to 5 degrees.
4. The substrate support according to claim 3, wherein the plurality of second flow openings are oriented at an oblique angle with respect to the plane of the lower end of the pocket.
5. The substrate support according to claim 4, wherein the angle of inclination is 20 degrees or more.
6. The substrate support according to claim 5, wherein the angle of inclination is within the range of 50 to 60 degrees.
7. The substrate support according to claim 1, wherein the second flow opening and the third flow opening are each arranged along a circular row.
8. The substrate support according to claim 7, wherein the first flow openings are arranged along a plurality of rows.
9. A substrate support usable in semiconductor manufacturing, wherein the substrate support is The first outer surface and A pocket is positioned on the inside of the first outer surface and defines a pocket surface that is recessed relative to the first outer surface, One or more lift pin openings and The lift pin openings of the one or more lift pin openings are provided, An opening having a diameter, A ledge that is recessed from the pocket surface by a first distance and extends by a second distance, wherein the sum of the first and second distances is less than the diameter, A hole extending from the aforementioned ledge and A substrate support comprising the above.
10. The substrate support according to claim 9, wherein the sum is the ratio of the diameters, and the ratio is in the range of 0.45 to 0.
65.
11. The substrate support according to claim 9, wherein the sum of the above is within the range of 2.7 mm to 3.2 mm.
12. The substrate support according to claim 9, wherein the diameter is within the range of 5.3 mm to 5.8 mm.
13. The substrate support according to claim 9, wherein at least one of the one or more lift pin openings includes an arched surface along its inner edge.
14. The substrate support according to claim 13, wherein the arched surface has a radius, the radius is a ratio of the diameter, and the ratio is 0.1 or less.
15. The substrate support according to claim 9, further comprising a lift pin sized and molded to be positioned in at least one of the one or more lift pin openings.
16. The substrate support according to claim 15, wherein the head of the lift pin has a second diameter which is a ratio of the diameter, and the ratio is 0.70 or less.
17. The substrate support according to claim 15, wherein the head of the lift pin has a second diameter, the diameter is a ratio of the second diameter, and the ratio is in the range of 1.45 to 1.
95.
18. The substrate support according to claim 15, wherein the head of the lift pin has a second diameter, the sum of which is a ratio of the second diameters, and the ratio is in the range of 0.85 to 0.
95.
19. A processing chamber usable for semiconductor manufacturing, wherein the processing chamber is One or more side walls, A window that defines the processing space at least partially, One or more heat sources capable of operating to heat the processing space, A substrate support arranged in the processing space The substrate support comprises, The first outer surface and A ledge positioned on the inside of the first outer surface and recessed relative to the first outer surface, A pocket is located inside the ledge and defines a pocket surface that is recessed relative to the ledge, A plurality of second flow openings extending within the ledge, Multiple third flow openings extending to the first outer surface, One or more lift pin openings, The lift pin openings of the one or more lift pin openings are provided, An opening having a diameter, A ledge that is recessed from the pocket surface by a first distance and extends by a second distance, wherein the sum of the first and second distances is less than the diameter. A processing chamber equipped with the following:
20. The processing chamber according to claim 19, further comprising a lift pin sized and molded to be positioned in at least one of the one or more lift pin openings, wherein the lift pin has a second diameter, and at least one of the one or more lift pin openings has an arched surface along its inner edge, the arched surface having a radius, the radius being a ratio of the second diameter, and the ratio being in the range of 0.0065 to 0.085.