Gas exhaust frames including paths with size variations, and related devices and methods.

Abstract

Embodiments of the present disclosure relate to gas exhaust frames, including paths of varying sizes, used within a substrate processing chamber, and related apparatus and methods. In one or more embodiments, the processing chamber includes a chamber body and a window. The processing chamber includes one or more heat sources, substrate supports, liners, and a preheating ring. The processing chamber includes one or more gas inlets and a first set of exhaust paths located on a first side of a reference plane. The first set of exhaust paths has a first cross-sectional gradient increasing along a first direction. The processing chamber includes a second set of exhaust paths located on a second side of a reference plane. The second set of exhaust paths has a second cross-sectional gradient increasing along a second direction opposite to the first direction.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure relate to a gas exhaust frame including a path having size variations, used within a substrate processing chamber, and related apparatus and methods.

Background Art

[0002]

[0002] The continuous reduction in the size of semiconductor devices depends, for example, on more precise control of the flow rate and temperature of process gases supplied to a semiconductor process chamber. In many cases, in a cross-flow chamber, the process gas can be supplied to the chamber and directed across the surface of the substrate being processed. The uniformity of deposition on the substrate can be affected, for example, by the gas flow rate.

[0003]

[0003] For example, the non-uniformity of the gas flow rate can include a plume-shaped profile of the gas concentration. Further, the modularity of adjusting process parameters can be limited, which can prevent the uniformity of deposition (such as uniformity from the center to the edge).

[0004]

[0004] Therefore, there is a need for an improved processing chamber that promotes the uniformity of deposition and a method of using the same.

Summary of the Invention

[0005]

[0005] Embodiments of the present disclosure relate to a gas exhaust frame including a path having size variations, used within a substrate processing chamber, and related apparatus and methods.

[0006]

[0006] In one or more embodiments, a processing chamber applicable to use in semiconductor manufacturing includes a chamber body and a window, the chamber body and window defining at least partially a processing space. The processing chamber includes one or more heat sources configured to heat the processing space, a substrate support disposed within the processing space, a liner that at least partially lines the chamber body, and a preheating ring disposed within the processing space and at least partially supported by the liner. The processing chamber includes one or more gas inlets and a first set of exhaust paths located opposite one or more gas inlets on a first side of a reference plane. The first set of exhaust paths has a first cross-sectional gradient increasing along a first direction. The processing chamber includes a second set of exhaust paths located opposite one or more gas inlets on a second side of a reference plane. The second set of exhaust paths has a second cross-sectional gradient increasing along a second direction opposite to the first direction.

[0007]

[0007] In one or more embodiments, a gas exhaust frame is included, which is inserted into a processing chamber applicable to use in semiconductor manufacturing. The gas exhaust frame includes a first outer surface, a second outer surface, and a third outer surface. The second and third outer surfaces extend from the first outer surface along a certain length, and the gas exhaust frame has a height between the second and third outer surfaces. The gas exhaust frame includes a plurality of exhaust paths having size variations. Thereafter, at least a portion of each exhaust path in the plurality of exhaust paths is different in size from each of the other exhaust paths in the plurality of exhaust paths.

[0008]

[0008] In one or more embodiments, a method for modifying a processing chamber applicable to use in semiconductor processing includes arranging a liner including an opening in the processing space. The method includes arranging one or more gas exhaust frames at least partially in the opening of the liner. One or more gas exhaust frames include a first set of exhaust paths arranged on a first side of a reference plane, the first set of exhaust paths having a first cross-sectional area gradient increasing along a first direction. One or more gas exhaust frames include a second set of exhaust paths arranged on a second side of a reference plane, the second set of exhaust paths having a second cross-sectional area gradient increasing along a second direction opposite to the first direction. The method includes fluidly connecting one or more exhaust frames to an exhaust assembly.

[0009]

[0009] To enable a more detailed understanding of the above-mentioned features of the Disclosure, a more specific description of the Disclosure, which has been briefly summarized above, can be given by reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered to limit the scope of the Disclosure, and other equally valid embodiments may also be permitted. [Brief explanation of the drawing]

[0010] [Figure 1]

[0010] This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments. [Figure 2]

[0011] This is a schematic top view of the processing chamber shown in Figure 1 according to one or more embodiments. [Figure 3]

[0012] This is a schematic isometric projection view of a pair of gas exhaust frames according to one or more embodiments. [Figure 4]

[0013] This is a schematic top view of a pair of gas exhaust frames shown in Figure 3 according to one or more embodiments. [Figure 5]

[0014] This is a schematic isometric projection view of a pair of gas exhaust frames according to one or more embodiments. [Figure 6]

[0015] This is a schematic top view of a pair of gas exhaust frames shown in Figure 5 according to one or more embodiments. [Figure 7]

[0016] This is a schematic isometric projection view of a pair of gas exhaust frames according to one or more embodiments. [Figure 8]

[0017] This is a schematic top view of a pair of gas exhaust frames shown in Figure 7 according to one or more embodiments. [Figure 9]

[0018] This is a schematic isometric projection view of a pair of gas exhaust frames according to one or more embodiments. [Figure 10]

[0019] This is a schematic top view of a pair of gas exhaust frames shown in Figure 9 according to one or more embodiments. [Figure 11]

[0020] This is a schematic isometric projection view of a pair of gas exhaust frames according to one or more embodiments. [Figure 12]

[0021] This is a schematic top view of a pair of gas exhaust frames shown in Figure 11 according to one or more embodiments. [Figure 13]

[0022] This is a schematic isometric projection view of a pair of gas exhaust frames according to one or more embodiments. [Figure 14]

[0023] This is a schematic front view of a pair of gas exhaust frames shown in Figure 13 according to one or more embodiments. [Figure 15]

[0024] These are schematic isometric projection views of a pair of gas exhaust frames shown in Figures 13 and 14 according to one or more embodiments. [Figure 16]

[0025] This is a schematic front view of a pair of gas exhaust frames shown in Figure 15 according to one or more embodiments. [Figure 17]

[0026] This is a schematic isometric projection view of a pair of gas exhaust frames according to one or more embodiments. [Figure 18]

[0027] Schematic front view of a pair of gas exhaust frames shown in FIG. 17 according to one or more embodiments above. [Figure 19]

[0028] Schematic flow diagram of a method of modifying a processing chamber applicable for use in semiconductor processing according to one or more embodiments. [Figure 20]

[0029] Schematic top view of a substrate during a deposition process according to one or more embodiments. [Figure 21]

[0030] Schematic top view of a substrate during a deposition process according to one or more embodiments. [Figure 22]

[0031] Schematic graph of deposition thickness versus substrate radius according to one or more embodiments.

Mode for Carrying Out the Invention

[0011]

[0032] For ease of understanding, the same reference numbers are used, where possible, to indicate the same elements common to the figures. Elements and features of one embodiment are assumed to be beneficially incorporated into other embodiments without further recitation.

[0012]

[0033] Embodiments of the present disclosure relate to a gas exhaust frame including a path having size variations used within a substrate processing chamber, as well as related apparatuses and methods. The size variations facilitate modularity in adjusting gas parameters (such as flow zones, pressure zones, and / or temperature zones, etc.) to promote enhanced deposition uniformity (such as uniformity from the center to the edge, etc.).

[0013]

[0034] FIG. 1 is a schematic side cross-sectional view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is utilized to grow an epitaxial film on a substrate 102. The processing chamber 100 generates a cross-flow of precursors across the upper surface 150 of the substrate 1

[0014]

[0035] The deposition chamber 100 includes an upper body 156, a lower body 148 positioned below the upper body 156, and a flow module 112 positioned between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form at least a portion of the chamber body. Inside the chamber body are a substrate support 106, an upper window 108 (such as an upper dome), a lower window 110 (such as a lower dome), a plurality of upper heat sources 141, and a plurality of lower heat sources 143. As shown in the figure, a controller 195 is used to communicate with the processing chamber 100 and to control processes and methods, such as at least a portion of the steps of the method described herein.

[0015]

[0036] A substrate support 106 is positioned between the upper window 108 and the lower window 110. The substrate support 106 includes a support surface 123 for supporting the substrate 102. Multiple upper heat sources 141 are positioned between the upper window and the lid 154. The multiple upper heat sources 141 form part of the upper lamp module 155. The lid 154 may include multiple sensors positioned to measure the temperature inside the processing chamber 100. Multiple lower heat sources 143 are positioned between the lower window 110 and the floor 152. The multiple lower heat sources 143 form part of the lower lamp module 145. The upper window 108 and the lower window 110 are made of an energy-permeable material such as quartz.

[0016]

[0037] A process space 136 and a purge space 138 are formed between the upper window 108 and the lower window 110. The process space 136 and the purge space 138 are part of the internal space that is at least partially defined by the upper window 108, the lower window 110, the upper liner 122, and the lower liner 109.

[0017]

[0038] The internal space has a positioned substrate support 106. The substrate support 106 includes a top surface on which a substrate 102 is positioned. The substrate support 106 is attached to a shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices. They provide movement and / or adjustment of the shaft 118 and / or the substrate support 106 within the processing space 136.

[0018]

[0039] The substrate support 106 may include positioned lift pin holes 107. The lift pin holes 107 are sized to receive lift pins 132 for raising and lowering the substrate 102 to and from the substrate support 106 before or after the deposition process is performed. The lift pins 132 may rest on a lift pin stop 134 when the substrate support 106 is lowered from the process position to the transfer position. The lift pin stop 134 may be coupled to a second shaft 104 via a plurality of arms.

[0019]

[0040] The flow module 112 includes one or more gas inlets 114 (multiple are shown), multiple purge gas inlets 164, and one or more gas exhaust outlets 116. In one or more embodiments, the multiple gas inlets 114 and multiple purge gas inlets 164 are located on the opposite side of the flow module 112 from the one or more gas exhaust outlets 116. An upper liner 122 and a lower liner 109 are located on the inner surface of the flow module 112 and protect the flow module 112 from reactive gases used during the deposition and / or cleaning processes. The (one or more) gas inlets 114 and the (one or more) purge gas inlets 164 are each positioned to allow gas to flow parallel to the upper surface 150 of the substrate 102 located in the process space 136. The (one or more) gas inlets 114 are fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The (one or more) purge gas inlets 164 are fluidly connected to one or more purge gas sources 162. One or more gas exhaust outlets 116 are fluidly connected to an exhaust pump 157. One or more process gases supplied using one or more process gas sources 151 may include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N2) and / or hydrogen (H2)). One or more purge gases supplied using one or more purge gas sources 162 may include one or more inert gases (such as one or more of argon (Ar), helium (He), hydrogen (H2), and / or nitrogen (N2)). One or more cleaning gases supplied using one or more cleaning gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more process gases include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0020]

[0041] One or more gas exhaust outlets 116 are further connected to or include an exhaust system 178. The exhaust system 178 fluidly connects one or more gas exhaust outlets 116 to an exhaust pump 157. The exhaust system 178 can assist in the controlled deposition of layers onto the substrate 102. In one or more embodiments, the exhaust system 178 is located on the opposite side of the processing chamber 100 from (one or more) gas inlets 114 and / or purge gas inlets 164. The exhaust system 178 includes a pair of gas boxes 179 and a common gas box 180.

[0021]

[0042] A preheating ring 200 is located outside the substrate support 106. The preheating ring 200 is supported on a shelf of the lower liner 109. The preheating ring 200 is further described in Figures 2 to 10. In one or more embodiments, the preheating ring 200 and / or the liner 109 and / or 122 are formed of one or more of the following: quartz (transparent quartz, e.g., clear quartz; opaque quartz, e.g., white quartz or gray quartz; and / or black quartz) and / or silicon carbide (SiC) and / or SiC-coated graphite.

[0022]

[0043] While heat sources 141 and 143 heat the preheating ring 200 and the substrate 102, one or more process gases P1 flow from one or more gas inlets 114 into the processing space 136 and over the substrate 102, forming one or more layers on the substrate 102 (e.g., epitaxially). After flowing over the substrate 102, one or more process gases P1 exit the internal space and flow through one or more gas exhaust outlets 116. The flow module 112 may be at least part of the side wall of the processing chamber 100. The disclosure also considers that one or more purge gases may be supplied to the purge space 138 (through a plurality of purge gas inlets 164) during the deposition process and exhausted from the purge space 138.

[0023]

[0044] The lower liner 109 includes an opening 190 (such as an upper recess), and a pair of gas exhaust frames 600A and 600B (the first gas exhaust frame 600A is shown in Figure 1) are at least partially positioned within the opening 190. The gas exhaust frames 600A and 600B will be further described in reference to Figure 5 below.

[0024]

[0045] As shown in the figure, the controller 195 communicates with the processing chamber 100 and is used to control processes and methods, such as at least some of the steps of the method described herein.

[0025]

[0046] The controller 195 is configured to receive data or input as sensor readings from multiple sensors. The sensors may include, for example, sensors that monitor the growth of (one or more) layers on the substrate 102, sensors that monitor growth or residue on the inner surfaces of the chamber components of the processing chamber 100 (such as the inner surfaces of the upper window 108 and / or liners 109, 122), sensors that monitor the gas flow of one or more process gases P1, and / or sensors that monitor the temperature of the substrate 102, substrate support 106, upper window 108, and / or liners 109, 122. The controller 195 is equipped with a system model of the processing chamber 100, or the controller 195 communicates with a system model. The system model includes a heating model, a deposition model, a coating model, a rotational position model, and / or a gas flow model. The system model is a program configured to estimate parameters within the processing chamber 100 (gas flow rate, uniformity profile from center to edge, gas pressure, processing temperature, rotational position of (one or more) components, heating profile, coating state, and / or cleaning state) through the deposition and / or cleaning processes. The controller 195 is further configured to store readings and calculated values. The readings and calculated values ​​include previous sensor readings, such as previous sensor readings within the processing chamber 100. The readings and calculated values ​​further include stored calculated values ​​after the sensor readings have been measured by the controller 195 and run through the system model. Thus, the controller 195 is configured to retrieve both stored readings and calculated values, as well as to save the readings and calculated values ​​for future use. By maintaining previous readings and calculated values, the controller 195 can be adjusted so that the system model reflects a more accurate version of the processing chamber 100 over time.

[0026]

[0047] The controller 195 may monitor and estimate optimized parameters, adjust the size of the cross-sectional area of ​​the exhaust paths of the gas exhaust frames 600A and 600B, detect the coating status of the upper window 108, generate a warning on the display, stop the deposition process, start a chamber downtime period, delay subsequent iterations of the deposition process, start a cleaning process, detect the cleaning status of the upper window 108, stop the cleaning process, adjust the heating power, and / or adjust the process recipe.

[0027]

[0048] The controller 195 includes a central processing unit (CPU) 198 (e.g., a processor), a memory 196 containing instructions, and support circuitry 197 for the CPU 198. The controller 195 directly controls various items or controls them via other computers and / or controllers. In one or more embodiments, the controller 195 is communicably coupled to a dedicated controller, and the controller 195 functions as a central controller.

[0028]

[0049] The controller 195 is any form of general-purpose computer processor. It is used in industrial settings to control various board processing chambers and equipment, as well as the subprocessors provided therein. Memory 196, or non-transient computer-readable media, is one or more readily available memories such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read-only memory (ROM), floppy disks, hard disks, flash drives, or local or remote memory. The support circuit 197 of the controller 195 is coupled to the CPU 198 to support the CPU 198. The support circuit 197 includes cache, power supply, clock circuit, input / output circuit and subsystems, etc. Operating parameters (e.g., center-to-edge profile, coating state, process gas P1 pressure, processing temperature, heating profile, process gas P1 flow rate, cleaning gas pressure, cleaning gas flow rate, and / or rotational position of substrate support 106) and processes are stored in memory 196 as software routines that are executed or invoked to convert the controller 195 into a controller for a specific purpose in order to control the processes of the various chambers / modules described herein. The controller 195 is configured to execute any of the processes described herein. When the instructions stored in memory are executed, they cause the processing chamber 100 to execute one or more of the processes of method 2000 (described below). The controller 195 and the processing chamber 100 are at least part of a system for processing substrates.

[0029]

[0050] Various processes described herein (such as the process in Method 2000, e.g., process 2016) may be performed automatically using the controller 195, or certain processes may be performed by a user, either automatically or manually.

[0030]

[0051] In one or more embodiments, the controller 195 includes a mass storage device, an input control unit, and a display unit. The controller 195 monitors the temperature of the substrate 102, the temperature of the substrate support 106, the temperature of the upper window 108, the process gas flow, and / or the purge gas flow. In one or more embodiments, the controller 195 includes multiple controllers 195. Thereafter, the stored readings and calculated values ​​and the system model are stored in a controller separate from the controller 195 that controls the processes of the processing chamber 100. In one or more embodiments, the entire system model and the stored readings and calculated values ​​are stored in the controller 195.

[0031]

[0052] The controller 195 is configured to control the sensor device, deposition, washing, rotational position, heating, and gas flow through the processing chamber 100 by providing outputs to control devices for the heat source, gas flow, and motion assembly 121. The control devices include control devices for the sensor device, upper heat source 141, lower heat source 143, process gas source 151, purge gas source 162, motion assembly 121, and exhaust pump 157.

[0032]

[0053] The controller 195 is configured to adjust the output to the control unit based on sensor readings, a system model, and stored and calculated readings. The controller 195 includes embedded software and compensation algorithms for calibrating the measured values. The controller 195 may include one or more machine learning algorithms and / or artificial intelligence algorithms. These algorithms estimate optimized parameters for the deposition and / or cleaning processes (such as adjusting the deposition process (e.g., process recipe), stopping the deposition process, initiating a chamber downtime period, delaying subsequent iterations of the deposition process, starting the cleaning process, stopping the cleaning process, adjusting the heating power, and / or adjusting the cleaning process). Optimized parameters may include, for example, a center-to-edge profile for the substrate 102 (to promote uniformity) with respect to temperature, gas flow rate, substrate position, and / or deposition thickness.

[0033]

[0054] One or more machine learning algorithms and / or artificial intelligence algorithms can implement, adjust, and / or improve the one or more algorithms, inputs, outputs, or variables described above. Furthermore or alternatively, one or more machine learning algorithms and / or artificial intelligence algorithms can rank or prioritize certain aspects of adjustments to process chamber 100 and / or method 2000 for multiple other aspects of process chamber 100 and / or method 2000. One or more machine learning algorithms and / or artificial intelligence algorithms can consider multiple other changes within the processing chamber, such as hardware replacement and / or degradation. In one or more embodiments, one or more machine learning algorithms and / or artificial intelligence algorithms consider upstream or downstream changes that may occur in the processing system as a result of changes in variables of process chamber 100 and / or method 2000. For example, if variable "A" is adjusted to cause a change in process aspect "B", and such adjustment unintentionally causes a change in process aspect "C", one or more machine learning algorithms and / or artificial intelligence algorithms can take such change in aspect "C" into account. In such embodiments, one or more machine learning algorithms and / or artificial intelligence algorithms embody a plurality of predictive modes related to carrying out the process chamber 100 and / or method 2000. These predictive modes may be used to proactively mitigate unintended changes within the processing system.

[0034]

[0055] One or more machine learning algorithms and / or artificial intelligence algorithms can, for example, use regression models (such as linear regression models) or clustering techniques to estimate optimized parameters. The algorithms may be unsupervised or supervised. One or more machine learning algorithms and / or artificial intelligence algorithms can, for example, optimize the heating power applied to heat sources 141, 143 and / or the size of one or more cross-sectional areas of one or more exhaust paths of gas exhaust frames 600A, 600B. One or more machine learning algorithms and / or artificial intelligence algorithms can, for example, optimize the size and / or gas conductance of at least one exhaust path (such as all of the exhaust paths) of gas exhaust frames 600A, 600B.

[0035]

[0056] One or more machine learning algorithms and / or artificial intelligence algorithms can optimize, for example, the center-to-edge gas concentration profile across the substrate 102 during the deposition process. The center-to-edge gas concentration profile can be pre-generated using a simulation process. One or more machine learning algorithms and / or artificial intelligence algorithms can adjust the center-to-edge gas concentration profile using data collected in real time. The center-to-edge gas concentration profile is affected, for example, by the size of the exhaust path.

[0036]

[0057] In one or more embodiments, the controller 195 automatically performs one or more of the steps described herein without the use of one or more machine learning algorithms or artificial intelligence algorithms. In one or more embodiments, the controller 195 compares measured values ​​(such as (one or more) gas flow rates) and / or deposition thickness with data in a lookup table and / or library to determine whether (one or more) adjustments can be used to facilitate the center-to-edge profile. The controller 195 may store the measured values ​​as data in a lookup table and / or library.

[0037]

[0058]

[0038]

[0059] Figure 2 is a schematic top view of the processing chamber 100 shown in Figure 1 according to one or more embodiments.

[0039]

[0060] The processing chamber 100 includes a gas injection assembly 185. In one or more embodiments, a side gas injection assembly 189 can inject one or more process gases P1 in a cross-flow manner in addition to the primary flow of one or more process gases P1.

[0040]

[0061] Figure 3 is a schematic isometric projection view of a pair of gas exhaust frames 400A and 400B according to one or more embodiments.

[0041]

[0062] Figure 4 is a schematic top view of a pair of gas exhaust frames 400A and 400B shown in Figure 3, according to one or more embodiments.

[0042]

[0063] Each of the gas exhaust frame pairs 400A and 400B includes multiple exhaust paths 411A-415A and 411B-415B. In each of the gas exhaust frame pairs 400A and 400B, the respective multiple exhaust paths 411A-415A and 411B-415B are substantially equal in size to one another.

[0043]

[0064] Figure 5 is a schematic isometric projection view of a pair of gas exhaust frames 600A and 600B according to one or more embodiments.

[0044]

[0065] Figure 6 is a schematic top view of a pair of gas exhaust frames 600A and 600B shown in Figure 5, according to one or more embodiments.

[0045]

[0066] Each gas exhaust frame 600A, 600B includes a first outer surface 621A, 621B, a second outer surface 622A, 622B, and a third outer surface 623A, 623B. The outer surfaces 622A, 622B and 623A, 623B of the second and third outer surfaces extend along length L1 relative to the first outer surfaces 621A, 621B. Each gas exhaust frame 600A, 600B has a height H1 between the second outer surface 622A, 622B and the third outer surface 623A, 623B. Each gas exhaust frame 600A, 600B has a width W1 that is greater than the length L1 and height H1. Each of the gas exhaust frame pairs 600A, 600B includes a plurality of exhaust paths 611A-615A, 611B-615B. In each of the gas exhaust frame pairs 600A and 600B, the respective multiple exhaust paths 611A-615A and 611B-615B have size variations. As a result, at least a portion of each of the multiple exhaust paths 611A-615A and 611B-615B is of a different size from each of the other exhaust paths 611A-615A and 611B-615B. In one or more embodiments, one or more of the exhaust paths 611A-615A and 611B-615B are of equal size to one another. The first outer surfaces 621A and 621B are arc-shaped. In one or more embodiments, the size variation is a size gradient. In one or more embodiments, the size gradient is a cross-sectional area gradient. In one or more embodiments, the cross-sectional area gradient is with respect to the cross-sectional area of ​​the multiple exhaust paths 611A-615A and 611B-615B shown in Figure 6.

[0046]

[0067] The first set of exhaust paths 611A to 615A is located on the first side of the reference plane RP1. The second set of exhaust paths 611B to 615B is located on the second side of the reference plane RP1. The second set of exhaust paths has a second cross-sectional gradient that increases along the second direction opposite to the first direction. When the first and second gas exhaust frames 600A and 600B are located within the opening 190 of the lower liner 109, the first set of exhaust paths 611A to 615A and the second set of exhaust paths 611B to 615B are located on the opposite side of one or more gas inlets 114 (as shown in Figure 1).

[0047]

[0068] In the first gas exhaust frame 600A, the cross-sectional area gradient (e.g., the first cross-sectional area gradient for the first set of exhaust paths 611A to 615A) increases along a first direction D1 (e.g., the arc direction) parallel to the first outer surface 621A of the first gas exhaust frame 600A. In the second gas exhaust frame 600B, the cross-sectional area gradient (e.g., the second cross-sectional area gradient for the second set of exhaust paths 611B to 615B) increases along a second direction D2 (e.g., the arc direction) parallel to the first outer surface 621B of the second gas exhaust frame 600B. The second direction D2 is opposite to the first direction D1.

[0048]

[0069] Each gas exhaust frame 600A, 600B includes arc-shaped bars 625A, 625B and a plurality of legs 631A-636A, 631B-636B extending from each arc-shaped bar 625A, 625B. Each of the plurality of legs 631A-636A, 631B-636B surrounds each of the plurality of exhaust paths 611A-615A, 611B-615B. As shown in Figure 1, when the plurality of legs 631A-636A, 631B-636B are positioned in the processing chamber 100, they abut against (one or more) inner surfaces of the upper liner 122, and one or more process gases P1 flow vertically through the exhaust paths 611A-615A, 611B-615B when exhausted from the process space 136. Each of the multiple exhaust paths 611A-615A, 611B-615B includes multiple opening sections. These sections extend to the second outer surfaces 622A, 622B and from the second outer surfaces 622A, 622B to the third outer surfaces 623A, 623B. Each of the multiple opening sections includes a cross-sectional gradient along the first direction D1 or the second direction D2. The multiple opening sections of the first set of exhaust paths 611A-615A and the multiple opening sections of the second set of exhaust paths 611B-615B are aligned above the preheating ring 200 (as shown in Figure 1).

[0049]

[0070] The exhaust paths 611A and 611B at the first end closest to the first ends 616A and 616B of each gas exhaust frame 600A and 600B have a first cross-sectional area (in the view shown in Figure 6), and the exhaust paths 615A and 615B at the second end closest to the second ends 617A and 617B of each gas exhaust frame 600A and 600B have a second cross-sectional area (in the view shown in Figure 6). The second cross-sectional area is larger than the first cross-sectional area by a ratio of the ratio to the first cross-sectional area. In one or more embodiments, the ratio is 0.2 or greater, for example, in the range of 0.2 to 0.3. In one or more embodiments, the ratio is approximately 0.25. In each of the first gas exhaust frame 600A and the second gas exhaust frame 600B, the cross-sectional area gradient increases by a step S1 between each of the multiple exhaust paths 611A~615A and 611B~615B (in directions D1 and D2, respectively). In one or more embodiments, step S1 is in the range of 4.6% (0.046) to 6.8% (0.068). In one or more embodiments, step S1 is in the range of 5.7% (0.057) to 5.8% (0.058), for example, about 5.74% (0.0574).

[0050]

[0071] The exhaust paths 611A and 611B at the first end are the outermost exhaust paths, furthest from the reference plane RP1, for each set of exhaust paths 611A-615A and 611B-615B. The exhaust paths 615A and 615B at the second end are the innermost exhaust paths, closest to the reference plane RP1, for each set of exhaust paths 611A-615A and 611B-615B.

[0051]

[0072] Figure 7 is a schematic isometric projection view of a pair of gas exhaust frames 800A and 800B according to one or more embodiments.

[0052]

[0073] Figure 8 is a schematic top view of a pair of gas exhaust frames 800A and 800B shown in Figure 7, according to one or more embodiments.

[0053]

[0074] Each of the gas exhaust frame pairs 800A and 800B includes a plurality of exhaust paths 811A to 815A and 811B to 815B. The exhaust paths 811A and 811B closest to the first ends 616A and 616B of each gas exhaust frame 800A and 800B have a first cross-sectional area (in the view shown in Figure 8), and the exhaust paths 815A and 815B closest to the second ends 617A and 617B of each gas exhaust frame 800A and 800B have a second cross-sectional area (in the view shown in Figure 8). The second cross-sectional area is larger than the first cross-sectional area by a ratio of the ratio to the first cross-sectional area. In one or more embodiments, the second ratio is 0.5 or greater, for example, 0.7 or greater, for example, 0.75 or greater. In one or more embodiments, the second ratio is in the range of 0.7 to 0.8, for example, about 0.75. In each of the first gas exhaust frame 800A and the second gas exhaust frame 800B, the cross-sectional area gradient increases by the second step S2 between each of the multiple exhaust paths 811A to 815A and 811B to 815B. In one or more embodiments, the second step S2 is in the range of 10.5% (0.105) to 16% (0.16). In one or more embodiments, the second step S2 is in the range of 14% (0.14) to 16% (0.16), for example, about 15% (0.15).

[0054]

[0075] Figure 9 is a schematic isometric projection view of a pair of gas exhaust frames 1000A and 1000B according to one or more embodiments.

[0055]

[0076] Figure 10 is a schematic top view of a pair of gas exhaust frames 1000A and 1000B shown in Figure 9, according to one or more embodiments.

[0056]

[0077] Each of the gas exhaust frame pairs 1000A and 1000B includes multiple exhaust paths 1011A-1015A and 1011B-1015B. The exhaust paths 1015A and 1015B closest to the first ends 617A and 617B of each gas exhaust frame 1000A and 1000B have a first cross-sectional area (in the view shown in Figure 10), and the exhaust paths 1011A and 1011B closest to the second ends 616A and 616B of each gas exhaust frame 1000A and 1000B have a second cross-sectional area (in the view shown in Figure 10). The second cross-sectional area is larger than the first cross-sectional area by the ratio described above in relation to Figure 6.

[0057]

[0078] In the first gas exhaust frame 1000A, the cross-sectional area gradient increases along the first direction D3 (e.g., the arc direction) parallel to the first outer surface 621A of the first gas exhaust frame 1000A. In the second gas exhaust frame 1000B, the cross-sectional area gradient increases along the second direction D4 (e.g., the arc direction) parallel to the first outer surface 621B of the second gas exhaust frame 1000B. The second direction D4 is opposite to the first direction D3. In each of the first gas exhaust frame 1000A and the second gas exhaust frame 1000B, the cross-sectional area gradient increases by a step S1 between each of the multiple exhaust paths 1011A~1015A, 1011B~1015B (in the first direction D3 and the second direction D4, respectively) (as described above in relation to Figure 6).

[0058]

[0079] Figure 11 is a schematic isometric projection view of a pair of gas exhaust frames 1200A and 1200B according to one or more embodiments.

[0059]

[0080] Figure 12 is a schematic top view of a pair of gas exhaust frames 1200A and 1200B shown in Figure 11, according to one or more embodiments.

[0060]

[0081] Each of the gas exhaust frame pairs 1200A and 1200B includes multiple exhaust paths 1211A-1215A and 1211B-1215B. The exhaust paths 1215A and 1215B closest to the first ends 617A and 617B of each gas exhaust frame 1200A and 1200B have a first cross-sectional area (in the view shown in Figure 12), and the exhaust paths 1211A and 1211B closest to the second ends 616A and 616B of each gas exhaust frame 1200A and 1200B have a second cross-sectional area (in the view shown in Figure 12). The second cross-sectional area is larger than the first cross-sectional area by the second ratio described above in relation to Figure 8.

[0061]

[0082] In the first gas exhaust frame 1200A, the cross-sectional area gradient increases along the first direction D3 (e.g., the arc direction) parallel to the first outer surface 621A of the first gas exhaust frame 1200A. In the second gas exhaust frame 1200B, the cross-sectional area gradient increases along the second direction D4 (e.g., the arc direction) parallel to the first outer surface 621B of the second gas exhaust frame 1200B. In each of the first gas exhaust frame 1200A and the second gas exhaust frame 1200B, the cross-sectional area gradient increases by a second step S2 between each of the multiple exhaust paths 1211A~1215A and 1211B~1215B (in the first direction D3 and the second direction D4, respectively) (as described above in relation to Figure 8).

[0062]

[0083] Figure 13 is a schematic isometric projection of a pair of gas exhaust frames 1400A and 1400B according to one or more embodiments. The gas exhaust frames 1400A and 1400B can be used at least partially in place of the gas exhaust frames 600A and 600B shown in Figures 1 and 5.

[0063]

[0084] Figure 14 is a schematic front view of a pair of gas exhaust frames 1400A and 1400B shown in Figure 13, according to one or more embodiments.

[0064]

[0085] The first gas exhaust frame 1400A includes a first set of exhaust paths 1411A to 1415A. The first set of exhaust paths 1411A to 1415A includes a plurality of opening sections 1431A to 1435A. These sections extend to a first outer surface 1421A of the first gas exhaust frame 1400A and extend from the first outer surface 1421A to a second outer surface 1424A of the first gas exhaust frame 1400A. The plurality of opening sections 1431A to 1435A of the first set include a first cross-sectional area gradient that increases in a first direction D1.

[0065]

[0086] The second gas exhaust frame 1400B includes a second set of exhaust paths 1411B to 1415B. The second set of exhaust paths 1411B to 1415B includes a plurality of opening sections 1431B to 1435B that extend to the first outer surface 1421B of the second gas exhaust frame 1400B. The plurality of opening sections 1431B to 1435B of the second set include a second cross-sectional area gradient that increases in the second direction D2.

[0066]

[0087] In one or more embodiments (as shown in Figures 13 and 14), the first cross-sectional gradient and / or the second cross-sectional gradient includes a ratio and / or a first step S1 (as described in relation to Figure 6). The disclosure considers that the first cross-sectional gradient and / or the second cross-sectional gradient may include a second ratio and / or a second step S2 (as described in relation to Figure 8).

[0067]

[0088] The gas exhaust frames 1400A and 1400B are inserted through one or more side walls of the processing chamber 100 and may extend at least partially into the opening 190 of the lower liner 109.

[0068]

[0089] Figure 15 is a schematic isometric projection of a pair of gas exhaust frames 1400A and 1400B shown in Figures 13 and 14 according to one or more embodiments. The gas exhaust frames 1400A and 1400B can be used at least partially in place of the gas exhaust frames 600A and 600B shown in Figures 1 and 5.

[0069]

[0090] Figure 16 is a schematic front view of a pair of gas exhaust frames 1400A and 1400B shown in Figure 15, according to one or more embodiments.

[0070]

[0091] In the embodiments shown in Figures 15 and 16, a plurality of opening sections 1431A to 1435A of the first set include a first cross-sectional area gradient that increases in a second direction D3, and a plurality of opening sections 1431B to 1435B of the second set include a second cross-sectional area gradient that increases in a second direction D4.

[0071]

[0092] Figure 17 is a schematic isometric projection of a pair of gas exhaust frames 1800A and 1800B according to one or more embodiments. The gas exhaust frames 1800A and 1800B can be used at least partially in place of the gas exhaust frames 600A and 600B shown in Figures 1 and 5.

[0072]

[0093] Figure 18 is a schematic front view of a pair of gas exhaust frames 1800A and 1800B shown in Figure 17, according to one or more embodiments.

[0073]

[0094] The first gas exhaust frame 1800A includes a first set of exhaust paths 1811A to 1815A. The first set of exhaust paths 1811A to 1815A includes a plurality of first opening sections 1831A to 1835A. These sections extend to a first outer surface 1821A of the first gas exhaust frame 1800A and extend to a plurality of second opening sections 1841A to 1845A that intersect the plurality of first opening sections 1831A to 1835A at an angle. In one or more embodiments, the plurality of second opening sections 1841A to 1845A include a first cross-sectional area gradient that increases in a first direction D1 (e.g., toward a reference plane RP1). The disclosure considers that the first cross-sectional area gradient may increase in a first direction D3 (e.g., away from the reference plane RP1). The first opening section 1835A and the second opening section 1845A are shown as ghosts in Figure 17 for the exhaust gas path 1815A at the end of the first gas exhaust frame 1800A.

[0074]

[0095] The second gas exhaust frame 1800B includes a second set of exhaust paths 1811B–1815B. The second set of exhaust paths 1811B–1815B includes a plurality of first opening sections 1831B–1835B extending to the first outer surface 1821B of the second gas exhaust frame 1800B. The plurality of first opening sections 1831B–1835B of the second set include a second cross-sectional area gradient that increases in a second direction D2 (e.g., toward the reference plane RP1). The disclosure considers that the second cross-sectional area gradient may increase in a second direction D4 (e.g., away from the reference plane RP1).

[0075]

[0096] In one or more embodiments (as shown in Figures 17 and 18), the first cross-sectional gradient and / or the second cross-sectional gradient includes a ratio and / or a first step S1 (as described in relation to Figure 6). The disclosure considers that the first cross-sectional gradient and / or the second cross-sectional gradient may include a second ratio and / or a second step S2 (as described in relation to Figure 8).

[0076]

[0097] In one or more embodiments, for each pair of gas exhaust frames 1800A, 1800B, the respective plurality of first opening sections 1831A-1835A, 1831B-1835B are substantially equal in size (e.g., cross-sectional area) to one another.

[0077]

[0098] The plurality of first opening sections 1831A-1835A, 1831B-1835B and the plurality of second opening sections 1841A-1845A, 1841B-1845B are shown as elongated slots in Figures 17 and 18. The present disclosure considers that the plurality of first opening sections 1831A-1835A, 1831B-1835B and the plurality of second opening sections 1841A-1845A, 1841B-1845B may be circular in shape, oval in shape, and / or rectangular in shape (as shown for exhaust passages 411A-415A, 411B-415B in Figures 3 and 4).

[0078]

[0099] This disclosure takes into consideration the following: the gas exhaust frames described herein (gas exhaust frames 1800A, 1800B, etc.) may be omitted, and the exhaust paths described herein (sets of exhaust paths 1811A-1815A, 1811B-1815B, etc.) may be formed within one or more components of the processing chamber 100 (such as the lower liner 109).

[0079]

[0100] This disclosure considers that the gas exhaust frames described herein may replace at least a portion of the gas box 179 shown in Figure 2. For example, the shelf sections 1861A and 1861B of the gas exhaust frames 1800A and 1800B may at least partially replace the vertical section of the gas box 179 shown in Figure 2.

[0080]

[0101] This disclosure takes into consideration the following: although five exhaust paths are shown for each gas exhaust frame in this specification, a different number (e.g., two, three, four, six or more) of exhaust paths may be used for each gas exhaust frame. The number may depend, for example, on process requirements and / or design constraints.

[0081]

[0102] Figure 19 is a schematic flowchart of a method 2000 for modifying a processing chamber, applicable to use in semiconductor processing according to one or more embodiments.

[0082]

[0103] Step 2002 includes placing the liner within the processing space. The liner includes an opening.

[0083]

[0104] Step 2004 includes positioning and / or adjusting one or more gas exhaust frames at least partially within the opening of the liner. The one or more gas exhaust frames include a first set of exhaust paths positioned on a first side of a reference plane. The first set of exhaust paths has a first cross-sectional gradient increasing along a first direction. The one or more gas exhaust frames include a second set of exhaust paths positioned on a second side of the reference plane. The second set of exhaust paths has a second cross-sectional gradient increasing along a second direction opposite to the first direction. In one or more embodiments, the positioning and / or adjustment of one or more gas exhaust frames adjusts the conductance of the gas flow through the liner. In one or more embodiments, the positioning and / or adjustment of one or more gas exhaust frames adjusts one or more of the flow ratio, pressure, temperature, and / or purge flow of (one or more) gases through the liner.

[0084]

[0105] Step 2006 includes fluidly connecting one or more exhaust frames to an exhaust assembly. In one or more embodiments, the exhaust assembly includes a plurality of gas boxes and a common exhaust box including a common plenum.

[0085]

[0106] Step 2008 includes placing the substrate on a substrate support within the processing space.

[0086]

[0107] Step 2010 includes heating the substrate.

[0087]

[0108] Step 2012 includes flowing one or more process gases over the substrate. The process gases form one or more layers (e.g., epitaxially) on the substrate.

[0088]

[0109] Step 2014 includes exhausting one or more process gases from the chamber. The one or more process gases are exhausted through a first set of exhaust paths and a second set of exhaust paths of one or more gas exhaust frames. The one or more gas exhaust frames are fluidly connected to an exhaust pump.

[0089]

[0110] An optional step 2016 includes adjusting the size of one or more cross-sectional areas of at least one exhaust path in a first set of exhaust paths or at least one exhaust path in a second set of exhaust paths. In one or more embodiments, the size adjustment is performed in real time and in situ. For example, blocks and / or plates may be moved (e.g., by actuators) to adjust the size of the cross-sectional area. In one embodiment, one or more of blocks 671-675, shown as ghosts in Figure 6, are moved to block or open their respective exhaust paths 611A-615A (e.g., outward along radial RD1). The disclosure considers that blocks similar to blocks 671-675 may be included in a second set of exhaust paths 611B-615B.

[0090]

[0111] Method 2000 may be used to modify the processing chamber. For example, to change the size of the exhaust path of the processing chamber, an existing liner may be replaced with the liner mentioned in step 2002.

[0091]

[0112] Figure 20 is a schematic top view of the substrate 102 during the deposition process according to one or more embodiments.

[0092]

[0113] Figure 21 is a schematic top view of the substrate 102 during the deposition process according to one or more embodiments.

[0093]

[0114] In Figure 20, the first boundary 2111 defines the area having the second gas flow concentration, and the second boundary 2112 defines the boundary of the area having the second gas flow concentration which is higher than the first gas flow concentration of the first boundary 2111.

[0094]

[0115] In Figure 21, the first boundary 2211 defines an area having a first gas flow concentration, and the second boundary 2212 defines the boundary between two areas having a second gas flow concentration higher than the first gas flow concentration of the first boundary 2211. In Figure 21, the first and second cross-sectional area gradients described above are used to exhaust a process gas P1 of 1 or more. As shown in Figure 21, the plume shape (e.g., of the first boundary 2211) is reduced compared to Figure 20 (e.g., of the first boundary 2111).

[0095]

[0116] Figure 22 is a schematic graph showing the relationship between deposition thickness and substrate radius according to one or more embodiments.

[0096]

[0117] The first profile 2301 shows the deposition thickness profile across the surface of the first substrate, and the second profile 2302 shows the deposition thickness profile across the surface of the second substrate (using the first and second cross-sectional area gradients described above to exhaust one or more process gases P1). As shown by the second profile 2302, the deposition thickness of the epitaxially deposited film on the second substrate is higher from the center of the second substrate to the edge of the second substrate.

[0097]

[0118] The third profile 2303 shows the deposition thickness profile across the surface of the third substrate. As shown by the third profile 2303, the gas flow over the third substrate is controlled and distributed as follows: the center-to-edge non-uniformity is reduced (compared to the first and second profiles 2301 and 2302) by reducing the thickness near the center of the third substrate and increasing the thickness near the outer edge of the third substrate. The advantages of this disclosure include the adjustability of processing parameters (gas flow rate, processing temperature, and / or deposition profile, e.g., center-to-edge profile), reduced gas flow non-uniformity, enhanced deposition thickness, increased throughput, enhanced center-to-edge deposition uniformity, modularity in adjusting processing parameters, rapid, simple, and cost-effective adjustment of exhaust path size to adjust processing parameters, and modularity in easily changing various processing chambers to perform various processes (e.g., various processing steps). By using various configurations of the gas exhaust frame, the boundary shape of the gas flow can take on various shapes (e.g., inverted U-shape, M-shape, or W-shape), which can facilitate changes in the uniformity profile of the deposition thickness from the center to the edge.

[0098]

[0119] This disclosure describes apparatus, systems, and methods used in connection with epitaxial deposition chambers. This disclosure takes into consideration that the apparatus, systems, and methods described herein may be used in connection with various other chambers, such as other epitaxial chambers and / or chambers for other processes.

[0099]

[0120] It is assumed that one or more embodiments disclosed herein may be combined. For example, one or more embodiments, features, components, processes, and / or characteristics of the processing chamber 100, controller 195, gas exhaust frames 400A, 400B, 600A, 600B, 800A, 800B, 1000A, 1000B, 1200A, 1200B, 1400A, 1400B, 1800A, 1800B, and / or method 2000 may be combined. Furthermore, it is assumed that one or more embodiments disclosed herein may include some or all of the aforementioned advantages.

[0100]

[0121] While the above description applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure can be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is defined by the following claims.

Claims

1. A processing chamber applicable to use in semiconductor manufacturing, Chamber body, A window, wherein the chamber body and the window define at least partially the processing space, One or more heat sources configured to heat the processing space, A substrate support arranged within the processing space, A liner that at least partially lines the chamber body, A preheating ring disposed within the processing space and at least partially supported by the liner, One or more gas inlets, A first set of exhaust paths arranged on the opposite side of the one or more gas inlets on the first side of the reference plane, the first set of exhaust paths having a first cross-sectional area gradient that increases along the first direction, and A processing chamber comprising a second set of exhaust paths located on the second side of the reference plane opposite to the one or more gas inlets, the second set of exhaust paths having a second cross-sectional area gradient that increases along the second direction opposite to the first direction.

2. The processing chamber according to claim 1, wherein the inner exhaust path of the first set and the second set closest to the reference plane has a first cross-sectional area, and the outer exhaust path of the first set and the second set furthest from the reference plane has a second cross-sectional area, the second cross-sectional area being larger than the first cross-sectional area by a ratio of 0.2 or more.

3. The processing chamber according to claim 1, wherein the outer exhaust path of each of the first set and the second set furthest from the reference surface has a first cross-sectional area, and the inner exhaust path of each of the first set and the second set closest to the reference surface has a second cross-sectional area, the second cross-sectional area being larger than the first cross-sectional area by a ratio of 0.2 or more.

4. A first gas exhaust frame having a first set of exhaust paths, wherein the first set of exhaust paths includes a plurality of opening sections extending outward from the outer surface of the first gas exhaust frame, and the plurality of opening sections of the first set include a first cross-sectional gradient, and The processing chamber according to claim 1, further comprising a second gas exhaust frame having a second set of exhaust paths, wherein the second set of exhaust paths includes a plurality of opening sections extending outward from the outer surface of the second gas exhaust frame, and the plurality of opening sections of the second set include a second cross-sectional gradient.

5. The processing chamber according to claim 4, wherein the first gas exhaust frame and the second gas exhaust frame are at least partially arranged within an opening formed in the liner.

6. The processing chamber according to claim 4, wherein the plurality of opening sections of the first set and the plurality of opening sections of the second set are aligned above the preheating ring.

7. A gas exhaust frame inserted into a processing chamber applicable to use in semiconductor manufacturing, First outer surface, The second exterior, A third outer surface, wherein the second and third outer surfaces extend toward the first outer surface along a certain length, and the gas exhaust frame has a height between the second and third outer surfaces, and A gas exhaust frame comprising multiple exhaust paths having variations in size, wherein at least a portion of each of the multiple exhaust paths is of a different size from each of the other exhaust paths in the multiple exhaust paths.

8. The gas exhaust frame according to claim 7, wherein the first outer surface is arc-shaped.

9. The gas exhaust frame according to claim 8, wherein the size variation is a size gradient.

10. The gas exhaust frame according to claim 9, wherein the size gradient is a cross-sectional area gradient.

11. The gas exhaust frame according to claim 10, wherein the cross-sectional area gradient increases along a direction parallel to the first outer surface.

12. The gas exhaust frame according to claim 11, wherein the exhaust path at the first end closest to the first end of the gas exhaust frame has a first cross-sectional area, and the exhaust path at the second end closest to the second end of the gas exhaust frame has a second cross-sectional area, wherein the second cross-sectional area is larger than the first cross-sectional area by a ratio of 0.2 or more.

13. The gas exhaust frame according to claim 11, comprising an arc-shaped bar and a plurality of legs, wherein the plurality of legs extend from the arc-shaped bar and define the boundaries of the plurality of exhaust paths.

14. The gas exhaust frame according to claim 11, wherein the cross-sectional area gradient increases by a step between the plurality of exhaust paths, and the step is in the range of 4.6% to 6.8%.

15. The gas exhaust flame according to claim 14, wherein the step is in the range of 5.7% to 5.8%.

16. The gas exhaust frame according to claim 11, wherein the plurality of exhaust paths include a plurality of first opening sections extending from the second outer surface to the third outer surface, and the plurality of first opening sections include the cross-sectional gradient.

17. The aforementioned multiple exhaust paths are Multiple first opening sections, and The gas exhaust frame according to claim 11, comprising a plurality of second opening sections that intersect the plurality of first opening sections at an angle, the plurality of second opening sections including the cross-sectional gradient.

18. A method for modifying a processing chamber applicable to use in semiconductor processing, Placing the liner, including the opening, within the processing space. One or more gas exhaust frames are arranged at least partially within the opening of the liner, wherein the one or more gas exhaust frames are A first set of exhaust paths arranged on the first side of a reference plane, the first set of exhaust paths having a first cross-sectional area gradient that increases along a first direction, Arranging one or more gas exhaust frames, including a second set of exhaust paths located on the second side of the reference plane, the second set of exhaust paths having a second cross-sectional area gradient that increases along the second direction opposite to the first direction, and A method comprising fluidly connecting one or more of the aforementioned gas exhaust frames to an exhaust assembly.

19. Placing a substrate on a substrate support within the processing space, To form one or more layers on the substrate, one or more process gases are flowed over the substrate, and The method according to claim 18, further comprising exhausting one or more process gases through a first set of exhaust paths and a second set of exhaust paths.

20. The method according to claim 19, further comprising adjusting the size of the cross-sectional area of ​​one or more exhaust paths in at least one exhaust path of the first set of exhaust paths or at least one exhaust path of the second set of exhaust paths.

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