Movable central reflector for semiconductor processing equipment, and related systems and methods

Abstract

This disclosure relates to a radiation reflector assembly used in conjunction with a semiconductor processing chamber, and a substrate processing system having a radiation reflector assembly. The radiation reflector assembly includes a shell body including a cylindrical inner wall, and a reflector disk including a central hole, a bottom reflective surface, and a top surface. The reflector disk is positioned within the cylindrical inner wall, spaced apart from the cylindrical inner wall, to allow fluid to flow between the reflector disk and the cylindrical inner wall. The radiation reflector assembly includes an actuator coupled to the reflector disk, which is capable of displacing the reflector disk axially relative to the shell body. The radiation reflector assembly includes an elongated tube extending through the central hole of the reflector disk. A method for processing a substrate using a radiation reflector assembly is also described.

Description

Technical Field

[0001] The present disclosure relates to a radiation reflector assembly for use with a semiconductor processing chamber, and related apparatus, systems, and methods.

Background Art

[0002] During the manufacture of integrated circuits, deposition processes are used to deposit films of various materials on a semiconductor substrate. Epitaxy is a deposition process that grows a very high purity thin layer of usually silicon or germanium on the surface of the substrate. Forming an epitaxial layer of uniform thickness across the substrate surface can involve precise temperature control. Generally speaking, the process temperature of a deposition process is mainly determined by a heat source. To finely adjust the heat distribution and temperature profile of a semiconductor substrate, other methods and components such as reflectors can be used to direct heat to various positions of the semiconductor substrate. However, reflectors currently available within a deposition chamber can be limited with respect to position and / or reflection direction. The reflector may, for example, not be able to adjust its function of directing energy when the processing parameters of the deposition chamber are adjusted.

[0003] Therefore, there is a need for an improved reflector component for a processing chamber that facilitates adjustability in directing energy towards a substrate in a modular and flexible manner.

Summary of the Invention

[0004] The present disclosure relates to a radiation reflector assembly for use with a semiconductor processing chamber, and related apparatus, systems, and methods. A method of processing a substrate using the radiation reflector assembly is also described.

[0005] In one or more embodiments, a radiation reflector assembly for use with a semiconductor processing chamber includes a shell body including a cylindrical inner wall, and a reflector disk including a central hole, a bottom reflective surface, and a top surface. The radiation reflector assembly includes a reflector disk which is positioned within the cylindrical inner wall, spaced apart from the cylindrical inner wall, to allow fluid to flow between the reflector disk and the cylindrical inner wall, and an actuator coupled to the reflector disk. The actuator is operable to displace the reflector disk axially relative to the shell body. The radiation reflector assembly includes an elongated tube extending through the central hole of the reflector disk.

[0006] In one or more embodiments, a substrate processing system for processing a substrate includes a chamber body including an internal space and a substrate support disposed within the internal space. The substrate processing system includes a translucent window at least partially supported by the chamber body and a shell body disposed above the translucent window and including a cylindrical inner wall. The substrate processing system includes a plurality of heat sources disposed above the translucent window and surrounding the shell body. The substrate processing system includes a reflector disk separated from a plurality of heating lamps by the shell body and an actuator coupled to the reflector disk. The actuator is operable to displace the reflector disk axially within the cylindrical inner wall of the shell body.

[0007] In one or more embodiments, a method for processing a substrate includes arranging a cylindrical wall to separate a source reflector and a heat source from a movable radiation reflector. The method includes using the source reflector to direct radiant energy from the heat source to a substrate placed in a processing chamber. The method includes using a movable radiation reflector, including a reflective disk, to direct radiant energy propagating out of the processing chamber back into the processing chamber while processing the substrate. The method includes adjusting one or more processing parameters of the substrate by moving the movable radiation reflector.

[0008] To better understand the features of this disclosure described above, a more detailed description of this disclosure, briefly summarized above, can be obtained by referring to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that since this disclosure may also permit other equally valid embodiments, the accompanying drawings only illustrate typical embodiments of this disclosure and should not be considered to limit the scope of this disclosure. [Brief explanation of the drawing]

[0009] [Figure 1] A schematic partial lateral cross-sectional view of a processing chamber according to one or more embodiments is shown. [Figure 2A] A schematic bottom perspective view of an upward lamp reflector used in the processing chamber shown in Figure 1, according to one or more embodiments of the present disclosure, is shown. [Figure 2B] A schematic partial lateral cross-sectional view of the upper lamp reflector shown in Figure 2A, according to one or more embodiments, is shown. [Figure 3A] A schematic side cross-sectional view of a reflector assembly including a movable radiation reflector according to one or more embodiments is shown. [Figure 3B] A schematic bottom perspective view of a reflector assembly including a movable radiation reflector according to one or more embodiments is shown. [Figure 4] A schematic cross-sectional view of a movable reflector according to one or more embodiments is shown. [Figure 5] A method for processing a substrate according to one or more embodiments is shown. [Figure 6] A method for cleaning a processing chamber according to one or more embodiments is shown. [Modes for carrying out the invention]

[0010] For ease of understanding, the same reference numerals have been used to indicate identical elements common to the figures where possible. Elements disclosed in one embodiment are intended to be usefully utilized in other embodiments, even without specific description.

[0011] Embodiments described herein relate to a movable radiation reflector used in conjunction with a semiconductor processing chamber, as well as related apparatus, systems, and methods. The movable radiation reflector is configured to reflect back radiant energy (reflected outside the semiconductor processing chamber) into the semiconductor processing chamber. The radiant energy may include radiation in the infrared spectrum, ultraviolet spectrum, and / or other spectra (such as one or more spectra that may be used for the semiconductor processing chamber). The movable radiation reflector described herein can be displaced axially along a central axis, thereby allowing the movable radiation reflector to be used to adjust or fine-tune the radiant energy received by the substrate during processing (e.g., epitaxial deposition), which will affect the temperature profile of the substrate and / or the deposition uniformity of the substrate (e.g., uniformity from center to edge). The movable radiation reflector can also generate additional channels for a cooling medium such as air or liquid, which may be beneficial in lowering the temperature of components near the heat source. The movable radiation reflector provides one or more adjustable options for controlling the temperature profile of the semiconductor substrate.

[0012] Note that a movable radiation reflector may be used in addition to the source reflector. A heat source in the processing chamber (e.g., a lamp) may have an associated reflector positioned near the heat source and configured to direct radiant energy toward the substrate. A cylindrical wall may be used to protect the heat source and associated reflector from other components.

[0013] In this disclosure, terms such as “top,” “bottom,” “side,” “above,” “below,” “up,” “down,” “upward,” “downward,” “horizontally,” and “vertically” do not refer to absolute directions. Instead, these terms refer to directions relative to an unspecified reference plane, which may be vertical, horizontal, or in any other angular direction.

[0014] In this disclosure, the terms “couples,” “coupling,” and “couple” may include, but are not limited to, fastenings such as welding, fusion, melting, interference fits, and / or fastenings such as the use of bolts, nuts, screw connections, pins, and / or screws. In this disclosure, the terms “couple,” “couplable,” and “coupled” may include, but are not limited to, integral molding. In this disclosure, the terms “couple,” “couplable,” and “coupled” may include, but are not limited to, direct bonding and / or indirect bonding such as indirect bonding through components such as links, blocks, and / or frames.

[0015] Figure 1 is a schematic partial lateral cross-sectional view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a thermal deposition chamber, such as an epitaxial deposition chamber. The processing chamber 100 is used to deposit an epitaxial film on a substrate 102. The processing chamber 100 generates a crossflow of precursor over the upper surface 150 of the substrate 102. In one or more embodiments, the processing chamber 100 is used for rapid heat treatment. The processing chamber 100 may operate under vacuum, such as at low pressure or near atmospheric pressure. Other pressures are possible.

[0016] The processing chamber 100 includes an upper body 156, a lower body 148 positioned below the upper body 156, and a flow module 112 positioned between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form at least a portion of the chamber body. Inside the chamber body are a substrate support 106, an upper window (such as an upper dome) 108, a lower window (such as a lower dome) 110, a plurality of upper heat sources 141, and a plurality of lower heat sources 143. As shown in the figure, a controller 120 is able to communicate with the processing chamber 100 and is used to control processes and methods, such as steps of the methods described herein.

[0017] In one or more embodiments, the heat sources described herein (e.g., heat sources 141, 43) include radiant heat sources such as lamps, for example, halogen lamps. The disclosure assumes that other heat sources may be used (in addition to or instead of lamps) for the various heat sources described herein. For example, a resistance heater, a light-emitting diode (LED), and / or a laser may be used for the various heat sources described herein. The heat source generates radiant heat, which is radiated toward a substrate support 106, which is positioned between an upper window 108 and a lower window 110 and has a support surface 123 that supports a substrate 102.

[0018] Multiple upward heat sources 141 are positioned between the upward window 108 and the lid 154. The multiple upward heat sources 141 form part of the upward heat source module 155. The upward heat sources 141 supply heat to the substrate 102 and / or substrate support 106. As described above, the upward heat sources 141 can be, for example, tungsten filament heat sources or higher-power LEDs. The multiple upward heat sources 141 can direct radiation, such as infrared radiation, through the upward window 108 to heat the substrate 102 and / or substrate support 106. The lid 154 includes multiple sensors positioned inside or on the processing chamber for measuring the temperature inside the chamber 100.

[0019] Multiple downward heat sources 143 are positioned between the downward window 110 and the floor 152. The multiple downward heat sources 143 form part of the downward heat source module 145. As described above, the downward heat sources 143 can be, for example, tungsten filament heat sources or higher-power LEDs. The multiple downward heat sources 143 can direct radiation, such as infrared radiation, through the downward window 110 to heat the substrate 102 and / or substrate support 106.

[0020] In one or more embodiments, an upper heat source 141 above the substrate support 106 is installed in the vicinity of the reflector assembly 300. The reflector assembly 300 includes an upper shell assembly 190, an upper source reflector 140 disposed in the peripheral region of the upper shell assembly 190, a movable radiation reflector 352 (such as a movable heat reflector) disposed in the central region of the upper shell assembly 190, and a heat sensor 192 (such as a temperature sensor). The sensor 192 is arranged to sense the temperature of an object (such as the substrate 102) by collecting energy (such as light) through the sensor tube 356 and is operable to sense the temperature. In one or more embodiments, the upper source reflector 140 is disposed above the upper heat source 141 and on or near the outer periphery of the upper shell assembly 190. The upper source reflector 140, the upper shell assembly 190, and the movable radiation reflector 352 can include a reflective material, for example, a reflective alloy material (such as a reflective aluminum alloy), gold, and / or graphite coated with a reflective metal (such as aluminum or gold). In one or more embodiments, the movable radiation reflector 352 is coated with a thin layer of gold. To detect the temperature of the substrate 102 during processing, an upper temperature sensor 192 such as a pyrometer can be installed in or near the upper shell reflector 190.

[0021] The movable radiation reflector 352 is configured to face the central region of the substrate support 106 and directs the radiation energy impinging on the movable radiation reflector 352 towards the substrate support 106 and the substrate 102. The movable radiation reflector 352 can be axially displaced along the central axis of the reflector assembly 300 and thus can adjust the amount and direction of the heat directed towards the substrate 102. Further, the displacement of the movable radiation reflector 352 creates (e.g., forms and / or adjusts) flow paths for a cooling medium, such as air or a cooling liquid, to flow through the reflector assembly 300, e.g., to flow into and / or out of the internal space of the upper heat source module 155. As shown in FIG. 1, the movable radiation reflector 352 can move up and down along the Z-axis representing the vertical direction.

[0022] The lower heat source 143 can be installed within or in the vicinity of the lower shell assembly 193, within or in the vicinity of the lower lamp reflector 130. The lower lamp reflector 130 can surround the lower shell assembly 193. A lower temperature sensor 194, such as a pyrometer, can be installed within the lower shell reflector 193 to detect the temperature of the substrate support 106 and / or the temperature of the back surface of the substrate 102.

[0023] The upper window 108 and the lower window 110 are formed of an energy transmissive material such as quartz and can be transmissive to enable heat (e.g., radiant energy such as infrared light) to pass from the upper heat source 141 and the lower heat source 143 to the substrate 102 and / or the substrate support 106, respectively. A processing space 136 and a purge space 138 are formed between the upper window 108 and the lower window 110. The processing space 136 and the purge space 138 are part of an internal space at least partially defined by the upper window 108, the lower window 110, the upper liner 122, and one or more lower liners 109.

[0024] A substrate support 106 is positioned within the processing space. The substrate support 106 includes a support surface 123 on which a substrate 102 is placed. The substrate support 106 is attached to a shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjusters that bring about movement and / or adjustment for the shaft 118 and / or the substrate support 106 within the processing space 136.

[0025] A lift pin hole 107 may be located within the substrate support 106. The lift pin hole 107 is sized to accommodate lift pins 132 for lifting the substrate 102 from the substrate support 106 and lowering the substrate 102 to the substrate support 106 before or after the deposition process. The lift pins 132 may rest on a lift pin stopper 134 when the substrate support 106 is lowered from the processing position to the transfer position. The lift pin stopper 134 can be coupled to the second shaft 104 via multiple arms.

[0026] The flow module 112 includes a plurality of gas inlets 114, a plurality of purge gas inlets 164, and one or more gas outlets 116. The gas inlets 114 are fluidically connected to one or more process gas sources 151 and one or more scrubbing gas sources 153. The purge gas inlets 164 are fluidically connected to one or more purge gas sources 162. One or more gas outlets 116 are fluidically connected to an exhaust pump 157. One or more process gases supplied using one or more process gas sources 151 may include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N2) and / or hydrogen (H2)). One or more purge gases supplied using one or more purge gas sources 162 may contain one or more inert gases (such as one or more of argon (Ar), helium (He), hydrogen (H2), and / or nitrogen (N2)). One or more cleaning gases supplied using one or more cleaning gas sources 153 may contain one or more of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more processing gases contain silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases contain hydrofluoric acid (HCl).

[0027] One or more gas outlets 116 are further connected to an exhaust system 178, or the system further includes an exhaust system 178. The exhaust system 178 fluidly connects one or more gas outlets 116 to an exhaust pump 157. The exhaust system 178 can assist in the controlled deposition of layers on the substrate 102.

[0028] The controller 120 is configured to control the sensor device, deposition, cleaning, rotational position, heating, movable radiation reflector 352, and gas flow through the processing chamber 100 by providing outputs to control units for the heat sources 141, 143, actuator 362, gas flow, and motion assembly 121. The control units include control units for the sensor device, upper heat source 141, lower heat source 143, processing gas source 151, actuator 362, purge gas source 162, motion assembly 121, and exhaust pump 157.

[0029] The controller 120 is configured to adjust the output to the control unit based on sensor readings, a system model, and stored readings and calculated values. The controller 120 includes embedded software and a compensation algorithm for calibrating the measured values. The controller 120 may include one or more machine learning algorithms and / or artificial intelligence algorithms that estimate optimized parameters for deposition and / or cleaning processes (e.g., for adjusting the vertical position of the movable radiation reflector 352 and / or adjusting the angle TA1 of the movable radiation reflector 352). The optimized parameters may include, for example, a profile from the center to the edge of the substrate 102 (to promote uniformity) relating to temperature, gas flow rate, and / or deposition thickness.

[0030] One or more machine learning algorithms and / or artificial intelligence algorithms may implement, adjust, and / or fine-tune one or more of the algorithms, inputs, outputs, or variables described above. In addition or alternatively, one or more machine learning algorithms and / or artificial intelligence algorithms may rank or prioritize certain aspects of the adjustment of the reflector assembly 300, method 500, and / or method 600 relative to other aspects of the reflector assembly 300, method 500, and / or method 600. One or more machine learning algorithms and / or artificial intelligence algorithms may take into account other changes within the processing system, such as hardware replacement and / or degradation. In one or more embodiments, one or more machine learning algorithms and / or artificial intelligence algorithms may take into account upstream or downstream changes that may occur within the processing system due to variable changes in the processing chamber 100 and / or method 2000. For example, if variable "A" is adjusted to cause a change in process aspect "B," and such adjustment unintentionally causes a change in process aspect "C," then one or more machine learning algorithms and / or artificial intelligence algorithms can take such a change in aspect "C" into account. In such embodiments, one or more machine learning algorithms and / or artificial intelligence algorithms embody a predictive aspect related to the realization of reflector assembly 300, method 500, and / or method 600. This predictive aspect can be used to proactively mitigate unintended changes within the processing system.

[0031] One or more machine learning algorithms and / or artificial intelligence algorithms may use, for example, regression models (such as linear regression models) or clustering techniques to estimate optimized parameters. The algorithms may be unsupervised or supervised. One or more machine learning algorithms and / or artificial intelligence algorithms may optimize, for example, the heating power applied to the heat sources 141, 143, the vertical position of the movable radiant reflector 352, and / or the angle TA1 of the movable radiant reflector 352.

[0032] One or more machine learning algorithms and / or artificial intelligence algorithms can optimize, for example, the center-to-edge temperature profile across the substrate 102 during deposition. The center-to-edge temperature profile can be pre-generated using simulation processing, and one or more machine learning algorithms and / or artificial intelligence algorithms can adjust the center-to-edge temperature profile using data collected in real time. The center-to-edge concentration profile is influenced, for example, by the vertical position and / or angle TA1 of the movable radiation reflector 352.

[0033] In one or more embodiments, the controller 120 automatically performs one or more of the processes described herein without using one or more machine learning algorithms or artificial intelligence algorithms. In one or more embodiments, the controller 120 compares measured values ​​(such as gas flow rate and / or deposit thickness) with data in a lookup table and / or library to determine whether adjustments are available to facilitate a center-to-edge profile. The controller 120 may store the measured values ​​as data in the lookup table and / or library.

[0034] Figure 2A shows a schematic bottom view of the upper lamp reflector 140 of Figure 1 according to one or more embodiments. Since the upper heat source 141 radiates thermal energy in all directions, the upper lamp reflector 140 is configured to reflect the thermal energy radiated from the substrate 102 back to the substrate 102. The upper lamp reflector 140 includes an annular body 201, which has an outer edge 202, an inner edge 203, a top surface 214, and a bottom surface 204. The upper lamp reflector 140 includes an outer rim 205 positioned above and outside the bottom surface 204 of the annular body 201. The annular body 201 is a ring-shaped body including a central opening, as shown in Figure 2A. The outer rim 205 can be used to align the reflector assembly 300 with respect to the lid 154. The base surface 204 includes a plurality of concave reflector structures, each of which includes a first reflective surface 210. The base surface 204 also includes a plurality of second reflective surfaces 220, which may be flat or concave. To visually distinguish the second reflective surfaces 220 from the first reflective surfaces 210, the second reflective surfaces 220 are shaded in Figure 2A. Each first reflective surface 210 and each second reflective surface 220 are positioned at different angular positions with respect to the center line of the annular body 201. As shown in Figure 2A, the upper lamp reflector 140 has approximately 20 first reflective surfaces 210 (2101...210 20 ) and approximately 12 second reflective surfaces 220 (2201...210 12 ) and include.

[0035] Figure 2B shows a schematic partial side section view of the upper lamp reflector of Figure 2A according to one or more embodiments. The partial side section view of Figure 2B shows the relative position between the upper lamp reflector 140, which includes reflective surfaces 2201, 2101, and 2202, and the heat source 141. As shown in Figure 2B, the heat source 141 is positioned between the first reflective surface 210 and the upper window 108 of the processing chamber 100 (for example, between the first reflective surface 210 and the substrate support 106). The first reflective surface 210 and / or the second reflective surface 220 are coated with a protective layer 280. Each first reflective surface 210 has a curved surface with a radius of curvature 212 which may be determined according to the shape factor of the heat source 141. Each second reflective surface 220 may be substantially flat. In one or more embodiments, each first reflective surface 210 has a partially cylindrical shape and extends radially from the outer edge 202 to the inner edge 203 of the upward lamp reflector 140.

[0036] Figure 3A is a schematic side cross-sectional view of a reflector assembly 300 according to one or more embodiments. The reflector assembly 300 includes an upper shell assembly 190, an upper source reflector 140 (e.g., an upper lamp reflector), and a central radiant reflector structure 350. The upper shell assembly 190 connects the upper source reflector 140 and the central radiant reflector structure 350 and includes a shell body 301 and a shell flange 305. The shell body 301 includes a cylindrical wall 382, ​​an inner surface 302, an outer surface 304, a proximal end 316, and a distal end 303. The shell flange 305 includes an upper surface 318, a lower surface 307, an inner diameter end 306, and an outer diameter end 322 extending radially outward from the inner surface 302 of the shell body 301. The shell flange 305 is connected to the nearest end 316 of the shell body 301 at its inner diameter end 306 as an integral monolithic structure. In one or more embodiments, the shell body 301 is a shell sleeve. The upper shell assembly 190 may have an optional downward annular reflector 311 located at the distal end 303 of the shell body 301. The downward radiating reflector 311 may be disc-shaped and have an upper surface 325, a bottom surface 326, an inner edge 327, and an outer edge 328. The downward radiating reflector 311 may be a separate component connected to the shell body 301, or it may be connected to the distal end 303 of the shell body 301 as an integral monolithic structure.

[0037] The downward radiation reflector 311 may be connected to the inner surface 302 of the shell body 301. In one or more embodiments, the inner surface 302 defines the inner diameter of the shell body 301, and the outer surface 304 defines the outer diameter of the shell body 301 (e.g., the shell sleeve). The upper surface 325 of the downward radiation reflector 311 may be connected to the inner surface 302 by a connector 313 such that an annular gap 312 is formed between the inner surface 302 and the outer edge 328. The connector 313 may be a bracket or structure suitable for connecting the downward radiation reflector 311 to the shell body 301. The downward radiation reflector 311 is made of the same material as the upward source reflector 140 and / or is similarly polished and / or coated. The downward radiant reflector 311 may have a notch 314 that allows a second temperature sensor, such as a pyrometer (in addition to the upward temperature sensor 192), to have a line of sight to the outer region (such as the edge) of the substrate 102.

[0038] The central radiation reflector structure 350 includes a movable radiation reflector 352, an upward radiation reflector 354, a sensor tube 356 (e.g., an elongated tube), and a mounting plate 372. The central radiation reflector structure 350 can direct the radiated energy toward the substrate 102 using radiation reflectors 311, 352, and 354 positioned at various locations.

[0039] In one or more embodiments, the sensor tube 356, the movable radiation reflector 352, and the cylindrical wall 382 are arranged coaxially with respect to each other along a common central axis 384. The central axis 384 may also pass through the center of the substrate support 106. The movable radiation reflector 352 can be displaced axially along the central axis 384. For example, the movable radiation reflector 352 can initially be housed near the downward radiation reflector 311, and then moved relative to the downward radiation reflector 311 to a higher position along the sensor tube 356. The movement of the movable radiation reflector 352 changes the distance between the movable radiation reflector 352 and the substrate support 106, which in turn changes the amount of radiation energy directed (e.g., reflected) toward the substrate support 106 by the movable radiation reflector 352. The displacement of the movable radiation reflector 352 also creates an airflow path located between the movable radiation reflector 352 and the downward radiation reflector 311. As the position of the movable radiation reflector 352 is adjusted along the vertical direction, the size of the airflow path between the movable radiation reflector 352 and the downward radiation reflector 311 (e.g., height) also changes, thereby allowing for an increase or decrease in the amount of circulating air. Both the amount of heat directed toward the substrate 102 and / or the substrate support 106, and the amount of circulating air, can be used to fine-tune and control the temperature profile of the substrate 102 (and / or the substrate support 106) and / or the temperature of the upper window 108. The temperatures of the substrate 102, the substrate support 106, and / or the upper window 108 can be adjusted by moving the movable radiation reflector 352.

[0040] In one or more embodiments, the angle TA1 between the movable radiation reflector 352 and the central axis 384 can be adjusted. The tilted position of the movable radiation reflector 352 is shown by a dashed line in Figure 3A. The movable radiation reflector 352 can be maintained in an orientation perpendicular to the central axis 384 and the cylindrical wall 382 (for example, an orientation such that the angle TA1 is approximately 90 degrees). To adjust the orientation relative to the central axis 384 and the cylindrical wall 382, ​​the movable radiation reflector 352 can be tilted via an actuator and coupling mechanism.

[0041] The mounting plate 372 is configured to function as a platform for supporting other parts of the central radiation reflector structure 350. For example, the actuator 362 and the sensor tube 356 are mounted on the mounting plate 372. The actuator 362 is used to drive the movable radiation reflector 352 via a coupling system. The actuator 362 can be an electric motor, a pneumatic actuator, a linear actuator, or any other suitable actuator. In one or more embodiments, the actuator 362 includes a threaded shaft which is rotated to drive a threaded block to move axially. The threaded block can be coupled (e.g., directly or indirectly) to the movable reflector plate 352 so that the axial movement of the threaded block drives the axial movement of the movable reflector 352. In one or more embodiments, the coupling system allows the movable radiation reflector 352 to be displaced axially along the central axis 384. The coupling system controls the orientation of the movable radiation reflector 352, for example, by maintaining the orientation of the movable radiation reflector 352 so as to be perpendicular to the cylindrical wall 382, ​​or by tilting the movable radiation reflector 352. The coupling system may include one or more of the following: beams, fins, planetary gears or worm gear chains, chains and sprockets, and / or any other suitable motion transmission system. As shown in Figure 3A, the coupling system includes a first coupling mechanism 364 and a second coupling mechanism 374, the second coupling mechanism 374 connecting to the movable radiation reflector 352, and the first coupling mechanism 364 connecting the second coupling mechanism 374 to the actuator 362. The first coupling mechanism 364 and the second coupling mechanism 374 can be combined to form a single coupling mechanism. In one or more embodiments, the actuator 362 is an electric motor, the first coupling mechanism 364 is a worm gear that converts rotational motion into linear motion, and the second coupling mechanism 374 includes a flange (such as a fin) that couples with the first coupling mechanism 364 via a mounting plate 372. In one or more embodiments, an upper temperature sensor 192 is mounted on the mounting plate 372 by a sensor stage 368.

[0042] The upward radiant reflector 354 can be attached to the mounting plate 372 via a plurality of couplings 370, such as fasteners like bolts or screws. The couplings 370 can also be used to attach the mounting plate 372 to the lid 154 and / or the upward source reflector 140. A gap is formed between the mounting plate 372 and the upward radiant reflector 354 to form a cooling channel, thereby allowing the temperature of the mounting plate 372 to be adjusted (e.g., lowered) during substrate processing. The upward radiant reflector 354 may be in direct contact with the mounting plate 372 without using couplings 370, and / or the upward radiant reflector 354 may be attached to the sensor tube 356. In one or more embodiments, the upward radiant reflector 354 is an optical component of the central radiant reflector structure 350. In one or more embodiments, the mounting plate 372, the second coupling mechanism 374, and the movable radiation reflector 352 move relative to the sensor tube 356 by the operation of the actuator 362. In one or more embodiments, the mounting plate 372, the second coupling mechanism 374, the movable radiation reflector 352, the upward radiation reflector 354, and the sensor tube 356 move together by the operation of the actuator 362. For example, the movable radiation reflector 352 may be movable relative to the sensor tube 356, or the movable radiation reflector 352 may be fixed in a fixed position relative to the sensor tube 356, thereby causing the movable radiation reflector 352 and the sensor tube 356 to move together.

[0043] A temperature sensor 192, such as a pyrometer, is mounted on one end of a sensor tube 356. The temperature sensor 192 can detect the temperature of the substrate 102 remotely and non-contactually. For both providing a line of sight to the temperature sensor 192 and protecting it from interference by other components, the sensor tube 356 is an elongated tubular member that extends beyond the distal end of the shell body 301 and points to the central region of the substrate 102. The sensor tube 356 may have a circular, rectangular, or other suitable shape. In one or more embodiments, a movable radiation reflector 352 and a second coupling mechanism 374 are mounted on the sensor tube 356 so that the sensor tube 356 moves together with the movable radiation reflector 352 and the second coupling mechanism 374. In one or more embodiments, the sensor tube 356 is mounted on a mounting plate 372, but the movable radiation reflector 352 and the second coupling mechanism 374 are not mounted on the sensor tube 356. In this way, the movable radiation reflector 352 can move freely independently of the sensor tube 356.

[0044] The movable radiant reflector 352 has a disc shape and includes an upper surface 378 and a lower surface 380. In one or more embodiments, the upper surface 378 is absorbent and the lower surface 380 is reflective. The lower surface 380 is shaped so that radiant energy (such as radiant heat) that strikes the lower surface 380 is directed toward the substrate 102. For example, the lower surface 380 may have a concave shape to concentrate radiant energy in the central region of the substrate 102. The lower surface 380 may have a flat shape that directs radiant energy toward the substrate 102 without a focusing effect. The lower surface 380 may be made of the same material as the upper lamp reflector 140, or other suitable material such as the reflective material described herein, and / or may be polished and / or coated in the same manner.

[0045] The movable radiation reflector 352 is positioned around a central axis 384 common to the sensor tube 356 and the upward radiation reflector 354. The sensor tube 356 extends beyond the distal end of the shell body 301. The movable radiation reflector 352 includes a central hole in its central region to allow the sensor tube 356 to pass through it. As shown in Figure 3A, the movable radiation reflector 352 has an outer diameter smaller than the inner diameter of the inner surface 302 of the shell body 301, and the movable radiation reflector 352 is positioned at a distance from the inner surface 302, so that a space is left between the movable radiation reflector 352 and the inner surface 302 that can be used as a channel to allow the flow of a fluid medium 390 such as air or liquid.

[0046] In one or more embodiments, the movable radiation reflector 352 is located within the shell body 301, and one or more cylindrical walls 382 of the shell body 301 separate the movable radiation reflector 352 from the upper source reflector 140 and the upper heat source 141. Such a configuration allows the movable radiation reflector 352 and the upper source reflector 140 to reflect radiation reflected from various components of the processing chamber 100. For example, the upper source reflector 140 is configured to redirect radiant heat generated by the heat source 141. Meanwhile, a certain amount of radiant energy may be reflected by the substrate 102, the upper window 108, and other surfaces of the processing chamber. Radiant energy propagating out of the processing space 136 through the upper window 108 of the processing chamber may strike the bottom surface 380. When this reflected radiant energy reaches the bottom surface 380, it is directed to be reflected back to the substrate 102.

[0047] In one or more embodiments, the actuator 362 has an operating range that displaces the movable radiation reflector 352 outward from within the shell body. For example, the actuator 362 can move the movable radiation reflector 352 above the upper surface 318 of the shell body 301. In one or more embodiments, the inner diameter of the shell hole 319 of the shell body is larger than the outer diameter of the reflector disc of the movable radiation reflector 352, thereby allowing the actuator 362 to move the movable radiation reflector 352 below the bottom surface 326 of the shell body 301.

[0048] Figure 3B shows a schematic bottom perspective view of a reflector assembly 300, including an upper shell assembly 190, an upper lamp reflector 140, and a central radiant reflector structure 350, according to one or more embodiments. The main body 360 is configured to connect to at least the shell body 301, thereby facilitating the reduction of interference reflections from measuring devices such as the upper temperature sensor 192. The cylindrical wall 382 facilitates the protection of the movable radiant reflector 352 from direct radiation from the heat source 141.

[0049] Figure 4 shows a schematic cross-sectional view of a central radiation reflector structure 350 according to one or more embodiments. The cross-sectional view is along the cross-sectional line "SS" shown in Figure 3A. As shown in Figure 4, the mounting plate 372 is provided with a central hole 402 through which a sensor tube 356 can pass. A second coupling mechanism 374 is arranged around the central hole 402 and may or may not be coupled to the sensor tube 356. The central hole 402 may also be included in the upward radiation reflector 354 and the movable radiation reflector 352. A plurality of coupling devices 370 are arranged around the outer circumference of the mounting plate 372. In one or more embodiments, the second coupling mechanism 374 includes a plurality of fins extending radially outward from the sensor tube 356, and the coupling devices 370 include a beam.

[0050] Figure 5 shows a method 500 for processing a substrate according to one or more embodiments. The method 500 may include loading a substrate 102 into a processing chamber 100 which includes a reflector assembly 300.

[0051] In step 502, the cylindrical wall of the shell body 301 is positioned to separate the heat source 141, such as the source reflector 140 and a lamp, from the movable radiation reflector 352. When the substrate 102 is being processed, the heat source 141 generates radiant energy to heat the substrate 102. In this disclosure, step 502 may be optional and may be omitted from method 500.

[0052] In step 504, the upper source reflector 140 directs the radiant energy from the heat source 141 to the substrate 102 placed inside the processing chamber 100. The radiant energy enters the processing chamber 100 and is absorbed by the substrate support 106 and / or the substrate 102. Certain radiant energy is reflected by components of the processing chamber 100 (e.g., the substrate support 106, the substrate 102, and / or other surfaces inside the processing chamber) and propagates out through the upper window 108 of the processing chamber.

[0053] In step 506, while the substrate 102 is being processed (for example, while a film is epitaxially deposited on the substrate 102), if radiant energy propagating out of the processing chamber hits the bottom reflective surface 380 of the movable radiation reflector 352, the movable radiation reflector 352 directs such radiant energy back into the processing chamber 100 through the upper window 108 (for example, by reflection).

[0054] In step 508, one or more processing parameters of the substrate (such as temperature uniformity and / or deposition uniformity) are adjusted by moving the movable radiation reflector 352. In one or more embodiments, the above-mentioned movement includes moving the movable radiation reflector 352 axially and / or tilting it at an angle.

[0055] In this disclosure, it is intended that step 508 can be performed simultaneously with step 504 and / or step 506.

[0056] Moving it in the axial direction may include displacing the reflective disk along the axis of the elongated tube 356, while tilting it at an angle may include adjusting the inclination of the reflective disk with respect to the axis of the sensor tube 356 (e.g., the elongated tube).

[0057] Method 500 may include (for example, simultaneously with one or more of steps 504, 506, and / or 508) flowing a heat transfer fluid (cooling fluid, such as air or liquid) into the space above the upper window 108. The heat transfer fluid may flow, for example, along the path of the fluid medium 390. The heat transfer fluid can cool or heat the upper window 108, thereby cooling or heating the substrate support 106 and / or the processing space 136.

[0058] Figure 6 shows a method 600 for cleaning a processing chamber 100 according to one or more embodiments. Method 600 may include transferring a substrate (e.g., substrate 102 in method 500) out of the processing chamber 100, which includes a reflector assembly 300.

[0059] In step 602, the cylindrical wall of the shell body 301 is positioned to separate the source reflector 140 and the heat source 141, such as a lamp, from the movable radiant reflector 352. When the processing chamber 100 is being cleaned, a cleaning gas (such as hydrofluoric acid) is flowed through it, while the heat source 141 generates radiant energy to heat the substrate support 106. In this disclosure, step 602 may be optional and may be omitted from method 600.

[0060] In step 604, the upper source reflector 140 directs the radiant energy from the heat source 141 to the substrate support 106 located inside the processing chamber 100. The radiant energy enters the processing chamber 100 and is absorbed by the substrate support 106. Certain radiant energy is reflected by components of the processing chamber 100 (e.g., by the substrate support 106 and / or other surfaces inside the processing chamber) and propagates out through the upper window 108 of the processing chamber.

[0061] In step 606, while the processing chamber is being cleaned (for example, while one or more cleaning gases are flowing through the processing space 136), if radiant energy propagating out of the processing chamber hits the bottom reflective surface 380 of the movable radiant reflector 352, the movable radiant reflector 352 directs (for example, reflects) such radiant energy back into the processing chamber 100 through the upper window 108.

[0062] In step 608, one or more processing parameters (such as temperature uniformity) for the substrate support 106 and / or the upper window 108 are adjusted by moving the movable radiation reflector 352. In one or more embodiments, the above-mentioned movement includes moving the movable radiation reflector 352 axially and / or tilting it at an angle.

[0063] In this disclosure, it is intended that step 608 can be performed simultaneously with step 604 and / or step 606. In this disclosure, it is intended that step 600 can be performed before or after method 500.

[0064] Moving it axially may include displacing the reflective disk along the axis of the elongated tube 356, while tilting it at an angle may include adjusting the inclination of the reflective disk relative to the axis of the elongated tube 356.

[0065] Method 600 may include (for example, simultaneously with one or more of steps 604, 606, and / or 608) flowing a heat transfer fluid (cooling fluid, such as air or liquid) into the space above the upper window 108. The heat transfer fluid may flow, for example, along the path of the fluid medium 390. The heat transfer fluid can cool or heat the upper window 108, thereby cooling or heating the substrate support 106 and / or the processing space 136.

[0066] Using the subject matter of the invention herein, various temperature profiles from the center to the edge of the substrate surface are available by using various vertical positions of the movable radiation reflector 352. For example, each vertical position of the movable radiation reflector 352 can induce a different temperature profile along the substrate surface from the center to the edge.

[0067] For example, the temperature profile from the center to the edge of the substrate during processing can be adjusted by adjusting the vertical position of the movable radiation reflector 352. Similarly, the temperature profile from the center to the edge of the upper window 108 during deposition and / or washing can be adjusted by adjusting the vertical position of the movable radiation reflector 352.

[0068] The advantages of this disclosure include the ability to precisely, easily, and efficiently adjust one or more processing parameters of the deposition and / or cleaning processes (such as temperature profiles of the substrate 102, substrate support 106, and / or upper window 108); to improve deposition uniformity (such as uniformity from center to edge); to make the cleaning process more efficient; to optimize (e.g., balance) the deposition on the substrate 102 and the coating on the upper window 108; and to modularly adjust processing parameters across various chamber configurations.

[0069] It is intended that the embodiments described herein can be combined. For example, one or more features, embodiments, components, operations, and / or characteristics of the processing chamber 100, controller 120, upper source reflector 140, reflector assembly 300, method 500, and / or method 600 can be combined. Furthermore, it is intended that any combination will achieve the aforementioned advantages.

[0070] While the above description applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure may be devised without departing from the fundamental scope of the present disclosure. The scope of the present disclosure is determined by the following claims.

Claims

1. A radiation reflector assembly used with a semiconductor processing chamber, A shell body including a cylindrical inner wall, A reflector disc comprising a central hole, a bottom reflective surface and a top surface, wherein the reflector disc is arranged within the cylindrical inner wall at a distance from the cylindrical inner wall, allowing fluid to flow between the reflector disc and the cylindrical inner wall. An actuator coupled to the reflector disc, the actuator being capable of moving the reflector disc axially relative to the shell body, An elongated tube extending through the central hole of the reflector disc, A radiation reflector assembly, equipped with a semiconductor processing chamber, for use in conjunction with the semiconductor processing chamber.

2. A temperature sensor attached to the radiant reflector assembly, which is capable of sensing the temperature of an object by collecting energy through the elongated tube. The radiation reflector assembly according to claim 1, further comprising:

3. The radiation reflector assembly according to claim 2, wherein the temperature sensor includes a pyrometer.

4. The radiation reflector assembly according to claim 1, wherein the reflector disc is attached to the elongated tube.

5. A coupling mechanism connecting the actuator and the reflector disc so as to maintain the reflector disc in a direction perpendicular to the central axis of the cylindrical inner wall. The radiation reflector assembly according to claim 1, further comprising:

6. The coupling mechanism converts the rotational motion of the actuator into linear motion, as described in claim 5.

7. The radiation reflector assembly according to claim 1, wherein the shell body, the reflector disc, and the elongated tube are arranged coaxially with respect to each other.

8. The radiation reflector assembly according to claim 1, wherein the orientation of the reflector disc is adjustable with respect to the central axis of the cylindrical inner wall.

9. The radiation reflector assembly according to claim 1, wherein the reflector disc is movable relative to the elongated tube.

10. The radiation reflector assembly according to claim 1, wherein the inner diameter of the shell hole of the shell body is larger than the outer diameter of the reflector disc, and the actuator has an operating range configured to displace the reflector disc outward from the inside of the shell body.

11. A substrate processing system for processing substrates, The chamber body including the internal space, A substrate support arranged within the aforementioned internal space, A transparent window, at least partially supported by the chamber body, It is positioned above the aforementioned transparent window and comprises a shell body including a cylindrical inner wall, It is positioned above the aforementioned transparent window and comprises multiple heat sources surrounding the shell body, A reflector disc separated from the plurality of heating lamps by the shell body, An actuator coupled to the reflector disc, the actuator being capable of displacing the reflector disc within the cylindrical inner wall of the shell body in the axial direction, A substrate processing system equipped with a substrate processing system.

12. The substrate processing system according to claim 11, further comprising an elongated tube extending through the central hole of the reflector disk.

13. The substrate support is configured to support a substrate thereon, and the substrate processing system is The substrate processing system according to claim 12, further comprising a temperature sensor positioned to sense the temperature of the substrate placed on the substrate support by collecting energy through the elongated tube.

14. The substrate processing system according to claim 13, wherein the temperature sensor includes a pyrometer.

15. The substrate processing system according to claim 12, wherein the reflector disc is attached to the elongated tube.

16. A coupling mechanism connecting the actuator and the reflector disc so as to maintain the reflector disc in a direction perpendicular to the central axis of the cylindrical inner wall. The substrate processing system according to claim 11, further comprising:

17. The substrate processing system according to claim 12, wherein the reflector disc is movable relative to the elongated tube.

18. The substrate processing system according to claim 11, wherein the angular direction of the reflector disc is adjustable with respect to the central axis of the cylindrical inner wall.

19. A method for processing a substrate, A source reflector is used to direct the radiant energy from the heat source to the substrate placed inside the processing chamber, During the processing of the substrate, a movable radiation reflector including a reflective disk is used to direct the radiant energy propagating out of the processing chamber back into the processing chamber, By moving the movable radiation reflector, one or more processing parameters of the substrate are adjusted, A method for processing a substrate, including the processing of a substrate.

20. Displacing the reflective disk axially along the axis of the elongated tube, Adjusting the inclination of the reflective disk with respect to the axis of the elongated tube, The method according to claim 19, further comprising:

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