Plasma process supply system and HF power amplifier unit for coupling HF signals for plasma process system

Abstract

In particular for a plasma process supply system, an HF power amplifier unit (10) for coupling HF signals, the HF power amplifier unit (10) comprises a) a first HF power amplifier stage device (AU1), b) a second HF power amplifier stage device (AU2), c) first and second transmission line devices (TL1, TL2) each connected to the outputs of the two HF power amplifier stage devices (AU1, AU2), and d) a coupling line device (TLC) configured to transmit the sum of the output power of the two HF power amplifier stage devices (AU1, AU2), where e) two Each of the transmission line devices (TL1, TL2) is connected to the coupling line device (TLC) so that it can transmit the output power of the first and second HF power amplifier stage devices (AU1, AU2) to the coupling line device (TLC), and the HF power amplifier unit (10) includes a measuring device (M1) configured to determine a variable representing the power output by the HF power amplifier stage device and / or the HF power amplifier unit, the measuring device (M1) being located in at least one of the transmission line devices and / or coupling line devices (TL1, TL2, TLC).

Description

Technical Field

[0001] The present invention relates to a power amplifier unit for coupling HF signals, particularly for a plasma process supply system and a plasma process system, which is configured for power of 2 kW or more, preferably 4 kW or more, and for frequencies in the range of 2 MHz to 200 MHz, particularly in the range of 10 MHz to 50 MHz.

[0002] The present invention further relates to a plasma process supply system and a plasma process system.

[0003] The present invention also includes a method for supplying a load, particularly a plasma process.

Background Art

[0004] A plasma process supply system is configured to supply plasma process equipment. A plasma process equipment is a configuration in which plasma is generated and maintained to initiate and maintain a process. This may involve a gas laser excitation device. In particular, it may involve a plasma process apparatus. Such a plasma process apparatus allows materials, especially their surfaces, to be processed, for example, coated, etched, or activated. Such plasma process apparatuses are used, for example, in the manufacture of architectural glass, photovoltaic modules, displays, microcontrollers, or semiconductor components such as semiconductor memory chips. Because these are high-precision processes, the requirements for such plasma process equipment, and therefore for the plasma process supply systems that power them, are extremely high in terms of measurement and control accuracy, reliability, continuous operation, and efficiency. Such plasma process supply systems are often configured for power of 2 kW or more, preferably 4 kW or more, and for frequencies in the range of 2 MHz to 200 MHz, particularly 10 MHz to 50 MHz. Such plasma process supply systems often have one or more high-frequency signal sources, which are configured to jointly provide the required power and adjust their power according to the process specifications. In addition, plasma process supply systems often have one or more impedance matching circuits configured to match the impedance at the output of a radio frequency signal source to the impedance at the input of the plasma process.

[0005] The output power of high-frequency signal sources, particularly HF power amplifier stages with transistor amplifiers, is currently limited to several hundred watts to several kilowatts by the transistors available. Therefore, to achieve higher output power, it is necessary to connect multiple high-frequency signal sources. This combination can be implemented in HF power amplifier units.

[0006] HF power amplifier units are designed to achieve minimal loss over a wide bandwidth. Such HF power amplifier units are particularly necessary for high-frequency signal sources in plasma process supply systems. As the requirements for measurement and control accuracy and stability in plasma process supply systems continue to increase, the corresponding requirements for the HF power amplifier units used in them also continue to grow. At high power levels, HF power amplifier units often require a significant amount of space. In addition, the problem of interference from unwanted radiation increases.

[0007] A power combiner for such a process is known, for example, from the German Utility Model No. 202016008958 (DE202016008958U1).

[0008] A drawback of such power combiners is that they are only suitable for limited power outputs. This is because the number of high-frequency signal sources that can be placed around them is limited by space. [Prior art documents] [Patent Documents]

[0009] [Patent Document 1] German Utility Model No. 202016008958 (DE202016008958U1) Specification [Overview of the project] [Problems that the invention aims to solve]

[0010] Therefore, the object of the present invention is to provide an HF power amplifier unit that reliably combines multiple high-power HF power amplifier stages in a limited space and monitors the output power using a measuring device. [Means for solving the problem]

[0011] This objective is achieved by the HF power amplifier unit described in independent claim 1. Advantageous further developments of the present invention arise from the dependent claims and / or the detailed description of the invention.

[0012] According to the present invention, an HF power amplifier unit is proposed for coupling HF signals configured for power of 2kW or more, preferably 4kW or more, and for frequencies in the range of 2MHz to 200MHz, particularly in the range of 10MHz to 50MHz. The HF power amplifier unit is: a) A first HF power amplifier stage device having a first output impedance, disposed on a first heat sink section, b) A second HF power amplifier stage device having a second output impedance, disposed on a second heat sink section, c) A first transmission line device connected to the output of the first HF power amplifier stage device, configured to transmit the output power of the first HF power amplifier stage device, and configured for a first line impedance equal to the output impedance of the first HF power amplifier stage device, d) A second transmission line device connected to the output of the second HF power amplifier stage device, configured to transmit the output power of the second HF power amplifier stage device, and configured for a second line impedance equal to the output impedance of the second HF power amplifier stage device, e) A coupling line device configured to transmit the sum of the output powers of first and second HF power amplifier stages, and configured for coupling line impedance, wherein the coupling line impedance depends on the first, second, and further line impedances, f) The first and second transmission line devices are connected to the coupling line device so that each can transmit the output power of the first and second HF power amplifier stage devices to the coupling line device, g) A measuring device configured to determine a variable representing the power output by an HF power amplifier stage and / or HF power amplifier unit, the measuring device being located in at least one of a transmission line and / or coupling line, It is equipped with.

[0013] An HF power amplifier stage system refers to a configuration that may include multiple HF power amplifier stages, coupling elements, and energy absorbers.

[0014] An energy absorber, like a resistor, can be a suitable component for extracting electrical energy from a power combiner and converting it into heat. However, this component could also be configured to convert at least a portion of the energy so that this portion can be reused elsewhere.

[0015] The coupling element can be, for example, an inductance or a coupling line having a predetermined length, for example, λ / 4. For example, if all of the coupling elements are inductors, they can advantageously always have the same inductance value and, in particular, can be of the same structure. The coupling elements can be arranged so that they have little, or especially no, influence on each other. "Almost" means a small influence that is negligible according to the laws of physics.

[0016] A heat sink section refers to a part of a cooling unit. A cooling unit may consist of at least a portion of a cooling plate. A cooling unit may consist of multiple parts made of different materials. Examples of such cooling units are disclosed and described in detail in the following publications: International Publication No. 2019 / 072894 (WO2019 / 072894A1), International Publication No. 2013 / 068004 (WO2013 / 068004A1), and International Publication No. 2014 / 207185 (WO2014 / 207185A1).

[0017] This enables the reliable combination of the output powers of two HF power amplifier stage devices within a limited space, and provides an HF power amplifier unit that monitors the power of the HF power amplifier stage device and / or the output power of the HF power amplifier unit using a measuring device. In addition, a shielding effect can be achieved by arranging the HF power amplifier stage device on the heat sink section. This can prevent destructive effects such as unwanted radiation.

[0018] The reason for this is also that the HF power amplifier stages, - often generate so much heat that they need to be cooled by a cooling unit, and / or - carry very high currents and voltages that would mutually interfere by radiating high-frequency electromagnetic fields due to high-power generation, so they often cannot be arranged very close to each other.

[0019] One solution is to place the HF power amplifier stages further apart from each other and / or shield them appropriately. In either case, the outputs of the HF power amplifier stages can then only be arranged at a certain distance from each other. Therefore, they have a disadvantageous distance for the power combiner. This disadvantage can be overcome by the advantageous combination of the aforementioned transmission line device and the coupling line device.

[0020] In a further aspect of the HF power amplifier unit, the following relationship can be applied to the coupling line impedance with respect to the first and second line impedances. ZC’ = 1 / (1 / Z1’ + 1 / Z2’) Here, ZC’: coupling line impedance, Z1’: first line impedance, Z2’: impedance of the second line is.

[0021] In this way, interference due to reflection can be further reduced, and measurement, and thus control, can be further improved.

[0022] In other embodiments of the HF power amplifier unit, the first and second line impedances can be equal.

[0023] In this way, interference due to reflection can be further reduced, and measurement, and thus control, can be further improved.

[0024] In other embodiments of the HF power amplifier unit, the first and second line impedances can each be twice the combined line impedance.

[0025] In this way, interference due to reflection can be further reduced, and measurement, and thus control, can be further improved.

[0026] In other embodiments, the HF power amplifier unit a) one, in particular a plurality of further HF power amplifier stage devices, each having a further output impedance and each being arranged on a further heat sink section, further HF power amplifier stage devices; b) one, in particular a plurality of further transmission line devices, each being connected to the respective output of a further HF power amplifier stage device, each being configured to transmit the output power of a further HF power amplifier stage device, and each being configured for a further line impedance equal to the output impedance of a further HF power amplifier stage device, further transmission line devices; may further comprise c) The combined line device is configured to transmit the sum of the output powers of the first and second HF power amplifier stage devices and is configured for a combined line impedance, the combined line impedance being dependent on the first, second and further line impedances. d) Each of the further transmission line devices is connected to the coupling line device so that the output power of each of the further HF power amplifier stage devices can be connected to and transmitted to the coupling line device.

[0027] In this way, the advantages of the present invention can be achieved even at higher power levels.

[0028] In further embodiments of the HF power amplifier unit, the following relationships may be applied to the coupled line impedance with respect to the first, second, and further line impedances. ZC' = 1 / (1 / Z1' + 1 / Z2' + 1 / Zn') Here, ZC': coupling line impedance, Z1': First line impedance, Z2': Second line impedance, Zn': Further line impedance That is the case.

[0029] Here,

number

[0030] The number of line impedances is obtained from the number of transmission line devices in the HF power amplifier unit.

[0031] In this way, interference due to reflection can be further reduced even at higher power levels, and measurement, and therefore control, can be further improved.

[0032] In a further embodiment of the HF power amplifier unit, the additional line impedance may be equal to the first and / or second line impedance.

[0033] In this way, interference due to reflection can be further reduced even at higher power levels, and measurement, and therefore control, can be further improved.

[0034] In a further embodiment of the HF power amplifier unit, each additional line impedance is N times the magnitude of the coupled line impedance, where N = the number of the first, second, and n transmission line devices.

[0035] In this way, interference due to reflection can be further reduced even at higher power levels, and measurement, and therefore control, can be further improved.

[0036] In a further embodiment of the HF power amplifier unit, one, more particularly, more preferably all, transmission line devices are: - A signal conductor configured to transmit the respective output signals of an HF power amplifier stage, - A reference ground, particularly a reference conductor electrically connected to a potential constant with respect to the reference ground, It can be equipped with.

[0037] In this way, radiation interference can be further reduced, and measurement, and therefore control, can be further improved.

[0038] In a further embodiment of the HF power amplifier unit, the coupling line device is -A coupled signal conductor configured to transmit the combined output signal of an HF power amplifier stage, - A reference ground, particularly a coupled reference conductor electrically connected to a potential constant with respect to the reference ground, It can be equipped with.

[0039] In this way, radiation interference can be further reduced, and measurement, and therefore control, can be further improved.

[0040] In a further embodiment of the HF power amplifier unit, one, in particular several, and especially preferably all, transmission line devices may be configured as microstrip lines.

[0041] In this way, radiation interference can be further reduced, and measurement, and therefore control, can be further improved.

[0042] In a further embodiment of the HF power amplifier unit, one, in particular several, and especially preferably all, transmission line devices may be configured as coaxial lines.

[0043] In this way, radiation interference can be further reduced, and measurement, and therefore control, can be further improved.

[0044] In a further embodiment of the HF power amplifier unit, the coupling line device may be configured as a microstrip line.

[0045] In this way, radiation interference can be further reduced, and measurement, and therefore control, can be further improved.

[0046] In a further embodiment of the HF power amplifier unit, the coupling line device may be configured as a coaxial line.

[0047] In this way, radiation interference can be further reduced, and measurement, and therefore control, can be further improved.

[0048] In a further embodiment of the HF power amplifier unit, one, in particular several, and especially preferably all, transmission line devices may be connected to their respective HF power amplifier stage devices by pins that may be part of their respective transmission line devices, particularly at their connection points, in particular at their signal connection points.

[0049] This makes production easier and enables highly reliable and accurate measurements.

[0050] In a further embodiment of the HF power amplifier unit, one, in particular several, and especially preferably all, HF power amplifier stage devices may be arranged on a printed circuit board, and the printed circuit boards are arranged on their respective heat sink sections, and in particular the transmission line devices are connected to the electrical contacts of these printed circuit boards.

[0051] In this way, radiation interference can be further reduced, and measurement, and therefore control, can be further improved.

[0052] In a further embodiment of the HF power amplifier unit, each heat sink section may be placed on a separate cooling unit.

[0053] In this way, radiation interference can be further reduced, and measurement, and therefore control, can be further improved.

[0054] In another embodiment of the HF power amplifier unit, the heat sink section may be positioned to surround the space enclosed by the heat sink section.

[0055] In this way, radiation interference can be further reduced, and measurement, and therefore control, can be further improved.

[0056] In a further embodiment of the HF power amplifier unit, the coupling line device may be located within a space enclosed by a heat sink section.

[0057] In this way, radiation interference can be further reduced, and measurement, and therefore control, can be further improved.

[0058] In a further embodiment of the HF power amplifier unit, one, in particular several, and especially preferably all, transmission line devices may be located within a space largely enclosed by a heat sink section.

[0059] In this way, radiation interference can be further reduced, and measurement, and therefore control, can be further improved.

[0060] In a further embodiment of the HF power amplifier unit, the measuring device may be located within a space enclosed by a heat sink section.

[0061] In this way, radiation interference can be further reduced, and measurement, and therefore control, can be further improved.

[0062] In a further embodiment of the HF power amplifier unit, one, in particular several, and especially preferably all, HF power amplifier stage devices may be located outside the space enclosed by the heat sink section.

[0063] In this way, radiation interference can be further reduced, and measurement, and therefore control, can be further improved.

[0064] In a further embodiment of the HF power amplifier unit, a plurality of, and more preferably all, HF power amplifier stages can be identically configured and, in particular, can be arranged symmetrically with respect to the coupling line.

[0065] This allows the same components to be used, thereby improving the reliability of the HF power amplifier unit.

[0066] In a further embodiment of the HF power amplifier unit, the cooling unit can be configured, in particular as a fluid cooling unit, especially as a cooling plate, for cooling by air, liquid, or a combination of both.

[0067] This prevents the HF power amplifier unit from overheating, allowing temperature-sensitive components to operate for longer periods, thus improving the reliability of the HF power amplifier unit.

[0068] In a further embodiment of the HF power amplifier unit, one, more particularly, more preferably all HF power amplifier stage device may have multiple amplifier stages whose outputs are connected to the inputs of a power combiner section, the power combiner section - Multiple inputs and one output, - Multiple coupling elements, particularly inductors, each connecting the input of the power combiner section to its output, - Energy absorbers, especially resistors, that connect the inputs of the power combiner section, and multiple energy absorbers, especially resistors, that connect the inputs of the power combiner section, especially in a star configuration, It is equipped with.

[0069] In this way, interference due to reflection can be further reduced even at higher power levels, and measurement, and therefore control, can be further improved.

[0070] In a further embodiment of the HF power amplifier unit, the HF power amplifier unit may include a power combiner, and the power combiner is - Multiple power combiner sections, - Multiple further transmission line devices, each connected to the output of the power combiner section, - Coupling line device, -Especially balanced transmission lines, It is equipped with.

[0071] In this way, interference due to reflection can be further reduced even at higher power levels, and measurement, and therefore control, can be further improved.

[0072] A balanced transmission line has a fixed characteristic impedance, and

number

[0073] Such a balanced transmission line is described, for example, in German Patent Application Publication No. 102023111812.9 (DE102023111812.9A1), filed on 5 May 2023, and is incorporated in its entirety by reference in this application.

[0074] Using such balanced transmission lines can avoid inter-supply of HF power amplifier stages used as high-frequency signal sources and uneven distribution of reflected output power. If the amplitude, phase, or internal impedance of HF power amplifier stages connected to a power combiner are unequal, a push-pull signal detrimental to the high-frequency signal source is generated. Additionally or alternatively, if reflected power is unevenly distributed, the phase and / or amplitude of individual HF power amplifier stages, as well as the load impedance, may change. This can place excessive stress on the HF power amplifier stage with the highest load.

[0075] To avoid this, the balanced transmission line can be connected to the input of the power combiner.

[0076] A balanced transmission line can also be configured as a balanced circuit with additional elements such as resistors.

[0077] In particular, the specified characteristic impedance of a balanced transmission line can be equal to the characteristic impedance at the corresponding input.

[0078] The specified characteristic impedance of a balanced transmission line can be equal to an integer multiple of the characteristic impedance at the corresponding input.

[0079] The specified characteristic impedance of a balanced transmission line can be equal to an integer fraction of the characteristic impedance at the corresponding input.

[0080] The specified characteristic impedance of a balanced transmission line can be equal to 25Ω, 50Ω, or 100Ω, in particular.

[0081] λ generally refers to the wavelength of a radio frequency signal within the operating frequency range of the corresponding transmission line, i.e., in this case, a balanced transmission line, particularly at the center frequency of the operating frequency range.

[0082]

number

[0083] The operating frequency range refers to the frequency range in which a power combiner and any HF power amplifier stages that can be connected to it operate, i.e., their design purpose. This can be a very narrow bandwidth operating frequency range, for example, 13.54 MHz to 13.58 MHz, or a slightly wider bandwidth, for example, 13.06 MHz to 14.06 MHz. In both cases, the center frequency is 13.56 MHz. The operating frequency range is usually specified as the nominal frequency range by the power combiner manufacturer. This varies depending on the application area of ​​the power combiner. If the power combiner is part of an HF power amplifier unit, it is configured for at least this operating frequency range as well.

[0084] The objective can also be achieved by a plasma process supply system comprising at least one HF power amplifier unit as described above, and an impedance matching circuit connected downstream thereof. For example, a power combiner as described above can be used particularly advantageously to ensure certain reliability and stability of the system.

[0085] The objective can also be achieved by a plasma process system comprising a plasma process supply system as described above and a plasma process apparatus connected to an impedance matching circuit.

[0086] For example, power combiners like those described above can be used particularly advantageously to ensure a certain level of reliability and stability in the system.

[0087] The objective can also be achieved by supplying a load, particularly a plasma process apparatus, using a power amplifier unit as described above, and an impedance matching circuit connected particularly downstream thereof, and more preferably connected to a plasma process apparatus. a) The first output power is generated by the first HF power amplifier stage device, b) The second output power is generated by the second HF power amplifier stage, c) First output power from the first transmission line device and d) The second output power from the second transmission line device is e) Transmitted to the coupling line device, f) The coupled output power of the first and second HF power amplifier stages is transmitted to the output of the power amplifier unit. a) The measuring device is used to determine a quantity representing the power output by an HF power amplifier stage and / or HF power amplifier unit in one of the transmission line equipment and / or coupling line equipment. g) These coupled output powers are supplied to the load.

[0088] In this way, the task can be solved with particular advantage.

[0089] Preferred exemplary embodiments of the present invention are schematically shown in the drawings and will be described in more detail below with reference to the figures in the drawings. [Brief explanation of the drawing]

[0090] [Figure 1]This diagram shows a schematic representation of a first embodiment of the HF power amplifier unit according to the present invention. [Figure 2] This diagram shows a schematic representation of a second embodiment of the HF power amplifier unit according to the present invention. [Figure 3] This diagram shows a schematic representation of an embodiment of the HF power amplifier unit according to the present invention. [Figure 4] Further embodiments of the HF power amplifier unit according to the present invention are shown. [Figure 5] This shows a plasma process system having an HF power amplifier unit according to the present invention. [Modes for carrying out the invention]

[0091] Figure 1 shows a first embodiment of the HF power amplifier unit 10 according to the present invention. The HF power amplifier unit 10 comprises two HF power amplifier stage devices AU1 and AU2, two cooling units CP1 and CP2, two heat sink sections CS1 and CS2, two printed circuit boards PCB1 and PCB2, two transmission line devices TL1 and TL2, a measuring device M1, and a coupling line device TLC. The first HF power amplifier stage device AU1 is located on the first printed circuit board PCB1. The first HF power amplifier stage device AU1 is also located on the first heat sink section CS1 via the first printed circuit board PCB1. The first heat sink section CS1 is part of the first cooling unit CP1. The second HF power amplifier stage device AU2 is located on the second printed circuit board PCB2. The second HF power amplifier stage device AU2 is also located on the second heat sink section CS2 via the second printed circuit board PCB2. The second heatsink section CS2 is part of the second cooling unit CP1.

[0092] The two cooling units, CP1 and CP2, are positioned to surround space V1.

[0093] The first transmission line device TL1 connects the first HF power amplifier stage device AU1 to the coupling line device TLC and includes a first signal conductor SL1 and a first reference conductor BL1. The second transmission line device TL2 connects the second HF power amplifier stage device AU2 to the coupling line device TLC and includes a second signal conductor SL2 and a second reference conductor BL2. The coupling line device TLC includes a coupled signal conductor SLC and a coupled reference conductor BLC.

[0094] The two signal conductors SL1 and SL2 are configured to transmit the output signals of the HF power amplifier stages AU1 and AU2, respectively. The two reference conductors BL1 and BL2 represent the reference potentials for the two signal conductors SL1 and SL2 and are electrically connected to a potential that does not change relative to the reference ground. This potential can also be the reference ground itself.

[0095] Two transmission line devices TL1 and TL2 are both connected to a coupling line device TLC. The coupling signal line SLC is configured to transmit the combined output signals of two HF power amplifier stage devices AU1 and AU2. The coupling reference conductor BLC represents the reference potential of the coupling signal conductor SLC and is electrically connected to a constant potential relative to the reference ground. This potential can also be the reference ground itself. The measuring device M1 is integrated into the coupling line device TLC and is configured to determine the combined power of the two HF power amplifier stage devices AU1 and AU2.

[0096] The measuring device M1 may include, for example, at least one directional coupler, or a current sensor and a voltage sensor. Through at least one directional coupler, the measuring device M1 can measure the power of the HF signal transmitted from the HF power supply unit 10 toward the impedance matching circuit 11 or the load. Preferably, the measuring device M1 can also measure the power of the HF signal reflected by the impedance matching circuit 11 and returned to the HF power supply unit 10. The power of the HF signal transmitted from the HF power supply unit 10 toward the impedance matching circuit 11 can also be determined via the current sensor and the voltage sensor. The power of the HF signal reflected by the impedance matching circuit 11 can also be detected by the current sensor and the voltage sensor.

[0097] A typical measuring device M1 is shown, for example, in one of the following publications: International Publication No. 2019 / 185424 (WO2019 / 185424A1), International Publication No. 2013 / 143537 (WO2013 / 143537A1), U.S. Patent Application Publication No. 2009 / 0140722 (US2009 / 0140722A1), U.S. Patent Application Publication No. 2006 / 0232265 (US2006 / 0232265A1), or German Utility Model No. 202011051371 (DE202011051371U1).

[0098] Figure 2 shows a further embodiment of the HF power amplifier unit 10 according to the present invention. The HF power amplifier unit 10 is configured very similarly to the HF power amplifier unit 10 of Figure 1, except that it has an additional third HF power amplifier stage device AUn. This third HF power amplifier stage device AUn is located on a third heat sink section CSn. The third heat sink section CSn is part of a third cooling unit C3. The third HF power amplifier stage device AUn is combined with the first and second HF power amplifier stage devices AU1, AU2 via a third transmission line device TLn and connected to a coupled power device TLC. The third transmission line device TLn has the same structure as the two transmission line devices TL1, TL2 in Figure 1. In contrast to the embodiment of Figure 1, the HF power amplifier unit of this embodiment does not have a printed circuit board. The HF power amplifier stage devices AU1, AU2, and AUn are located directly on cooling units CP1, CP2, and CPn. In addition, the first cooling unit CP1 has a first heat sink section CS1.

[0099] A more detailed explanation of each component mentioned in Figure 1 can be found in the explanation for Figure 1.

[0100] Overall, the HF power amplifier unit 10 of this embodiment is configured to combine the output signals of three HF power amplifier stages AU1, AU2, and AUn, and to further transmit the combined power via a coupled power unit TLC.

[0101] Figure 3 shows a further embodiment of the power amplifier unit 10 according to the present invention. The power amplifier unit 10 comprises a power combiner 1, four HF power amplifier stages AS1 to AS4, and two cooling units CP1 and CP2. The power combiner 1 comprises four inputs In1 to In4, a main output OUT, four coupling elements configured as inductors L1 to L4, and a balanced circuit B. The HF power amplifier stages AS1 to AS4 are connected to inputs In1 to In4. The inductors L1 to L4 connect inputs In1 to In4 to the main output OUT.

[0102] The first two inputs In1 and In2 are connected to the first output O1 via the first two inductors L1 and L2, and the second two inputs In3 and In4 are connected to the second output O2 via the second two inductors L3 and L4. The two outputs O1 and O2 are then connected to the main output OUT.

[0103] The four inductors L1-L4 and the four HF power amplifier stages AS1-AS4 are arranged on two cooling units CP1 and CP2. The first cooling unit CP1 contains the first two inductors L1 and L2 and the first two HF power amplifier stages AS1 and AS2. The HF power amplifier stages AS1 and AS2, along with the components of the first power combiner section 1a, namely the coupling elements configured here as inductors L1 and L2 and the energy absorbers configured here as resistors R1 and R2, together form the first HF power amplifier stage device AU1. The second two inductors L3 and L4 and the second two HF power amplifier stages AS3 and AS4 are arranged on the second cooling unit CP2. The HF power amplifier stages AS3 and AS4, along with the components of the second power combiner section 1b, namely the coupling elements configured here as inductors L3 and L4 and the energy absorbers configured here as resistors R3 and R4, together form the second HF power amplifier stage device AU2.

[0104] Balanced circuit B has four energy absorbers configured as resistors R1 to R4, and a balanced transmission line W1 with length n*λ / 2. Balanced circuit B connects the four inputs In1 to In4. For this purpose, the first two inputs In1 and In2 are interconnected via the first two resistors R1 and R2 located on the first cooling unit CP1. The first resistor R1 is connected to the first input In1, and the second resistor R2 is connected to the second input In2. Similarly, the second two inputs In3 and In4 are interconnected via the second two resistors R3 and R4 located on the second cooling unit CP2. The third resistor R3 is connected to the third input In3, and the fourth resistor R4 is connected to the fourth input In4. The balanced transmission line W1 then interconnects all four inputs In1 to In4.

[0105] In this way, two, and especially more than two, HF power amplifier stage units AU1 and AU2 can be interconnected. When connecting more than two HF power amplifier stage units AU1 and AU2, multiple balanced transmission lines can be connected in a star configuration.

[0106] Individual, and especially multiple, and especially preferably all, HF power amplifier stage units AU1, AU2 may have more than two HF power amplifier stages AS1, AS2. Accordingly, they may then have more than two components of power combiner sections 1a, 1b, namely more than two coupling elements configured here as inductors L1, L2, and more than two energy absorbers configured here as resistors R1, R2.

[0107] Figure 3 also shows possible connection configurations between the two outputs O1 and O2 of the two HF power amplifier stage devices AU1 and AU2 and the main output OUT.

[0108] The first output O1 of the first HF power amplifier stage AU1 is connected to the first transmission line TL1. The first transmission line TL1 includes a first signal conductor SL1 and a first reference conductor BL1. The second output O2 of the second HF power amplifier stage AU2 is connected to the second transmission line TL2. The second transmission line TL2 includes a second signal conductor SL2 and a second reference conductor BL2.

[0109] The two signal conductors SL1 and SL2 are configured to transmit the output signals of the HF power amplifier stages AU1 and AU2, respectively. The two reference conductors BL1 and BL2 represent the reference potential relative to the two signal conductors SL1 and SL2 and are electrically connected to a potential that does not change relative to the reference ground. In this case, this potential is the reference ground GND itself.

[0110] Two transmission line devices TL1 and TL2 are both connected to a coupling line device TLC. The coupling line device TLC has a coupling signal line SLC and a coupling reference line BLC. The coupling signal line SLC is configured to transmit the combined output signals of two HF power amplifier stage devices AU1 and AU2. The coupling reference conductor BLC represents the reference potential of the coupling signal conductor SLC and is electrically connected to a constant potential relative to the reference ground. In this case, this potential is the reference ground GND itself. The coupling line device TLC is connected to the main output OUT of the power amplifier unit 10.

[0111] In this case, the two transmission line devices TL1 and TL2 are configured as a microstrip line MSL.

[0112] Figure 4 shows an embodiment of the power amplifier unit 10 according to the present invention. The power amplifier unit 10 is very similar to the power amplifier unit 10 in Figure 3, except for a different viewpoint, and the connection configuration between the two outputs O1 and O2 of the two HF power amplifier stage devices AU1 and AU2 and the main output OUT is configured as a coaxial line CXL. Descriptions of the two transmission line devices TL1 and TL2, the two signal conductors SL1 and SL2, the two reference conductors BL1 and BL2, the coupling line device TLC, the coupling signal line SLC, and the coupling reference conductor BLC can be found in the description of Figure 3.

[0113] The two cooling units CP1 and CP2 may each have heat sink sections CS1 and CS2. Although the multiple heat sink sections CS1 and CS2 are arranged on a common cooling plate, they may also be spaced apart from each other (not shown in the figure). For example, the first heat sink section CS1 may be placed on the first side of the cooling unit, and the second heat sink section CS2 may be placed on the rear side of the same cooling unit.

[0114] In contrast to the power amplifier unit 10 in Figure 3, the power amplifier unit 10 here has two combiner circuit boards, PCB1 and PCB2.

[0115] The first combiner circuit board PCB1 is placed on the first heat sink section CS1, and therefore, in this embodiment, also on the first cooling unit CP1. The second combiner circuit board PCB2 is placed on the second heat sink section CS2, and therefore, in this embodiment, also on the second cooling unit CP2. Furthermore, the power amplifier unit 10 has the power combiner 1 shown in Figure 3. Four HF power amplifier stages AS1 to AS4 are shown, each distributed to HF power amplifier stage devices AU1 and AU2. Also shown are four coupling elements configured as inductors L1 to L4, a main output OUT, and a balanced circuit B. The balanced circuit B comprises four energy absorbers configured as resistors R1 to R4, and a balanced line W1 of length n*λ / 2.

[0116] The first two HF power amplifier stages AS1 and AS2 are located on the first amplifier circuit board PCB12. The first two HF power amplifier stages AS1 and AS2 are located together with the first amplifier circuit board PCB12 on the first heat sink section CS1, and therefore, in this embodiment, also on the first cooling unit CP1. The second two HF power amplifier stages AS3 and AS4 are located on the second amplifier circuit board PCB34. The second two HF power amplifier stages AS3 and AS4 are located together with the second amplifier circuit board PCB12 on the second heat sink section CS2, and therefore, in this embodiment, also on the second cooling unit CP2.

[0117] The first synthesizer circuit board PCB1 can also be combined with the first amplifier circuit board PCB12 to form a common circuit board.

[0118] The second synthesizer circuit board PCB2 can also be combined with the second amplifier circuit board PCB34 to form a common circuit board.

[0119] This simplifies manufacturing, reduces the number of cable connections between circuit boards, and makes the entire system more reliable.

[0120] The first two inductors L1 and L2 and the first two resistors R1 and R2 are arranged on the first combiner circuit board PCB1. The second two inductors L3 and L4 and the second two resistors R3 and R4 are arranged on the second combiner circuit board PCB2.

[0121] Figure 5 shows a plasma process system 17 having a plasma process supply system 12.

[0122] The plasma process supply system 12 includes a power amplifier unit 10 having a power combiner 1. These can be configured as described above.

[0123] The plasma process supply system 12 also includes an impedance matching circuit 11.

[0124] The main output OUT of the power combiner 1 is connected to the input of the impedance matching circuit 11. The output terminal of the impedance matching circuit 11 is connected to the load, in this case the plasma process equipment in the plasma chamber 13.

[0125] Plasma chamber 13 is - A substrate 15 is processed by plasma 16, for example, by coating or etching, -In order to ignite and maintain the plasma 16, HF power is coupled to the electrode 14 which is connected to the plasma chamber 13, It is equipped with.

[0126] The impedance matching circuit 11 is configured to convert the input impedance of the plasma process at its output to the output impedance of the power amplifier unit 10. Such a plasma process system and / or impedance matching circuit configuration is described, for example, in the following published applications: German Patent Application Publication No. 102009001355 (DE102009001355A1), German Patent Application Publication No. 102011007597 (DE102011007597A1), German Patent Application Publication No. 102011007598 (DE102011007598A1), International Publication No. 2021 / 209390 (WO2021 / 209390A1), and International Publication No. 2021 / 255250 (WO2021 / 255250A1).

Claims

1. In particular, an HF power amplifier unit (10) for coupling HF signals for a plasma process supply system and a plasma process system, wherein the HF power amplifier unit (10) is configured for power of 2 kW or more, preferably 4 kW or more, and for frequencies in the range of 2 MHz to 200 MHz, particularly in the range of 10 MHz to 50 MHz. The HF power amplifier unit (10) is a) A first HF power amplifier stage unit (AU1) having a first output impedance (Z1) disposed on a first heat sink section (CS1), b) A second HF power amplifier stage unit (AU2) having a second output impedance (Z2) disposed on a second heat sink section (CS2), c) A first transmission line device (TL1) connected to the output of the first HF power amplifier stage device (AU1), configured to transmit the output power of the first HF power amplifier stage device, and configured for a first line impedance (Z1') equal to the output impedance (Z1) of the first HF power amplifier stage device (AU1), d) A second transmission line device (TL2) connected to the output of the second HF power amplifier stage device (AU2), configured to transmit the output power of the second HF power amplifier stage device (AU2), and configured for a second line impedance (Z2') equal to the output impedance (Z2) of the second HF power amplifier stage device, e) A coupling line device (TLC) configured to transmit the sum of the output powers of the first and second HF power amplifier stage devices (AU1, AU2), and configured for a coupling line impedance (ZC'), wherein the coupling line impedance (ZC') depends on the first and second line impedances (Z1', Z2'), and here, f) The first and second transmission line devices (TL1, TL2) are each connected to the coupling line device (TLC) so that they can transmit the output power of the first and second HF power amplifier stage devices (AU1, AU2) to the coupling line device (TLC), g) A measuring device (M1) configured to determine a variable representing the power output by the HF power amplifier stage device and / or the HF power amplifier unit, wherein the measuring device (M1) is located in at least one of the transmission line device and / or the coupling line device (TL1, TL2, TLC), An HF power amplifier unit (10) is provided with the following:

2. The coupling line impedance (ZC') has the following relationship with respect to the second and first line impedances (Z2', Z1'): ZC'=(Z1' －１ +Z2' －１ ) －１ An HF power amplifier unit (10) according to claim 1 that satisfies the following conditions.

3. The HF power amplifier unit (10) according to claim 1 or 2, wherein the second and first line impedances (Z2', Z1') are of equal magnitude.

4. The HF power amplifier unit (10) according to any one of claims 1 to 3, wherein the second and first line impedances (Z2', Z1') are each twice the magnitude of the coupling line impedance (ZC').

5. The HF power amplifier unit (10) is a) One, in particular, a plurality of further HF power amplifier stage units (AUn), each having a further output impedance (Zn) and each positioned on a further heat sink section (CSn), b) One, in particular, a plurality of further transmission line devices (TLn), each connected to the respective output of the further HF power amplifier stage device (AUn), each configured to transmit the output power of the further HF power amplifier stage device (AUn), and each configured for a further line impedance (Zn') equal to the output impedance (Zn) of the further HF power amplifier stage device, Furthermore, c) The coupling line device (TLC) is configured to transmit the sum of the output powers of the first and second HF power amplifier stage devices (AU1, AU2, AUn), and is configured for the coupling line impedance (ZC'), the coupling line impedance (ZC') depends on the first, second, and further line impedances (Z1', Z2', Zn'), d) The HF power amplifier unit (10) according to any one of claims 1 to 4, wherein each of the further transmission line devices (TLn) is connected to the coupling line device (TLC) so that it can transmit the output power of the further HF power amplifier stage device (AUn) to the coupling line device (TLC).

6. The coupling line impedance (ZC') has the following relationship with respect to the first, second, and further line impedances (Zn', Z2', Z1'): ZC’=(Z1’ －１ +Z2’ －１ +Zn’ －１ ) －１ An HF power amplifier unit (10) according to any one of claims 1 to 5, which satisfies the following conditions.

7. The HF power amplifier unit (10) according to any one of claims 1 to 6, wherein the further line impedance is equal in magnitude to the second and / or first line impedance (Z2', Z1').

8. The HF power amplifier unit (10) according to any one of claims 1 to 7, wherein each of the further line impedances (Z2', Z1') is N times the magnitude of the coupling line impedance (ZC'), where N is the number of first, second, and nth transmission line devices (TL1, TL2, TLn).

9. One, more particularly several, and especially preferably all, transmission line devices (TL1, TL2, TLn) - Signal conductors (SL1, SL2, SLn) configured to transmit the respective output signals of the HF power amplifier stage devices (AU1, AU2, AUn), - Reference grounding, in particular reference conductors (BL1, BL2, BLn) electrically connected to a potential constant with respect to the reference ground (GND), An HF power amplifier unit (10) according to any one of claims 1 to 8, comprising:

10. The aforementioned coupling line device (TLC) is - A coupled signal conductor (SLC) configured to transmit the combined output signals of the HF power amplifier stage devices (AU1, AU2, AUn), - A coupled reference conductor (BLC) electrically connected to a potential constant with respect to the reference ground, particularly the reference ground (GND), An HF power amplifier unit (10) according to any one of claims 1 to 9, comprising:

11. An HF power amplifier unit (10) according to any one of claims 1 to 10, wherein one, more particularly several, and more preferably all, transmission line devices (TL1, TL2, TLn) are configured as microstrip lines (MSL).

12. An HF power amplifier unit (10) according to any one of claims 1 to 11, wherein one, more particularly several, and more preferably all, transmission line devices (TL1, TL2, TLn) are configured as a coaxial line (CXL).

13. The HF power amplifier unit (10) according to any one of claims 1 to 12, wherein the coupling line device (TLC) is configured as a microstrip line (MSL).

14. The HF power amplifier unit (10) according to any one of claims 1 to 13, wherein the coupling line device (TLC) is configured as a coaxial line (CXL).

15. An HF power amplifier unit (10) according to any one of claims 1 to 14, wherein one, more particularly several, and more preferably all, transmission line devices (TL1, TL2, TLn) are connected to each HF power amplifier stage device (AU1, AU2, AUn) particularly by their signal connection portions, preferably by pins which are part of each transmission line device (TL1, TL2, TLn).

16. An HF power amplifier unit (10) according to any one of claims 1 to 15, wherein one, more particularly several, and more preferably all, HF power amplifier stage devices (AU1, AU2, AUn) are arranged on printed circuit boards (PCB1, PCB2, PCBn), the printed circuit boards (PCB1, PCB2, PCBn) are arranged on their respective heat sink sections (CS1, CS2, CSn), and in particular the transmission line devices (TL1, TL2, TLn) are connected to the electrical contacts of these printed circuit boards (PCB1, PCB2, PCBn).

17. The HF power amplifier unit (10) according to any one of claims 1 to 16, wherein each of the heat sink sections (CS1, CS2, CSn) is arranged on a separate cooling unit (CP1, CP2, CPn).

18. The HF power amplifier unit (10) according to any one of claims 1 to 17, wherein the heat sink sections (CS1, CS2, CSn) are arranged to surround the space (V1) enclosed by them.

19. The HF power amplifier unit (10) according to any one of claims 1 to 18, wherein the coupling line device (TLC) is located within a space (V1) surrounded by the heat sink sections (CS1, CS2, CSn).

20. The HF power amplifier unit (10) according to any one of claims 1 to 19, wherein the majority of one, more particularly several, and especially preferably all, transmission line devices (TL1, TL2, TLn) are located within a space (V1) surrounded by the heat sink sections (CS1, CS2, CSn).

21. The HF power amplifier unit (10) according to any one of claims 1 to 20, wherein the measuring device (M1) is located within a space (V1) surrounded by the heat sink sections (CS1, CS2, CSn).

22. An HF power amplifier unit (10) according to any one of claims 1 to 21, wherein one, more particularly, more preferably all, HF power amplifier stage devices (AU1, AU2, AUn) are located outside the space (V1) surrounded by the heat sink sections (CS1, CS2, CSn).

23. The HF power amplifier unit (10) according to any one of claims 1 to 22, wherein multiple, and more preferably all, HF power amplifier stage devices (AU1, AU2, AUn) are identically configured and are arranged symmetrically with respect to the coupling line device (TLC).

24. The HF power amplifier unit (10) according to any one of claims 1 to 23, wherein the cooling unit (CP1, CP2, CPn) is configured and particularly mounted as a fluid cooling unit, particularly as a cooling plate, for example, to be cooled by air, liquid, or a combination of both.

25. One, more particularly, more preferably all HF power amplifier stage devices (AU1, AU2, AUn) have multiple amplifier stages (AS1, AS2, AS3, AS4), and the outputs of the multiple amplifier stages are connected to the inputs of power combiner sections (1a, 1b). The power combiner section (1a, 1b) is - Multiple inputs and one output, - A plurality of coupling elements, particularly inductors, each connecting the input of the power combiner section (1a, 1b) to the output, - Energy absorbers, particularly resistors, that connect the inputs of the power combiner section (1a, 1b), An HF power amplifier unit (10) according to any one of claims 1 to 24, comprising:

26. The system includes a power combiner (1), and the power combiner (1) is - Multiple power combiner sections (1a, 1b) - A plurality of further transmission line devices (TL1, TL2), each connected to the output of the power combiner section (1a, 1b), - Coupling Line Equipment (TLC), - In particular, the balanced transmission line (W1) and, An HF power amplifier unit (10) according to any one of claims 1 to 25, comprising:

27. A plasma process supply system (12) comprising at least one HF power amplifier unit (10) and an impedance matching circuit (11) connected downstream thereof, as described in any one of claims 1 to 26.

28. A plasma process system (17) comprising a plasma process supply system (12) according to claim 27 and a plasma process apparatus connected to the impedance matching circuit (11).

29. A method for supplying a load, particularly a plasma process, using a power amplifier unit (10) according to any one of claims 1 to 26 and an impedance matching circuit (11) connected particularly downstream thereof, and more preferably connected to a plasma process apparatus, a) The first output power is generated by the first HF power amplifier stage device (AU1), b) The second output power is generated by the second HF power amplifier stage device, c) First output power from the first transmission line device (TL1) and d) The second output power from the second transmission line device (TL2) is e) Transmitted to the coupling line device (TLC), f) The combined output power of the first and second HF power amplifier stage devices (AU1, AU2) is transmitted to the output of the power amplifier unit (10). g) The measuring device (M1) is used to determine a quantity representing the power output by the HF power amplifier stage devices (AU1, AU2) and / or the HF power amplifier unit (10) in one of the transmission line devices and / or coupling line devices (TL1, TL2, TLC), h) A method by which these coupled output powers are supplied to the load.

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