Material for forming a patterned coating containing multiple parts and device incorporating the same.

Abstract

A layered semiconductor device comprising a mixed ligand compound, wherein the mixed ligand compound comprises a cyclophosphazene core portion, a first ligand portion, and a second ligand portion. The first ligand portion and the second ligand portion are each bonded to the core portion. A composition comprising a plurality of compounds, each of which comprises a cyclophosphazene core portion and at least one ligand portion bonded to the cyclophosphazene core portion, wherein the plurality of compounds all have at least one ligand portion in common.

Description

[Technical Field]

[0001] (Cross-reference of related applications) This application claims priority to U.S. Provisional Application No. 63 / 498,486 filed on 26 April 2023 and U.S. Provisional Application No. 63 / 587,027 filed on 29 September 2023, the contents of which are incorporated herein by reference in their entirety.

[0002] (Field of invention) This disclosure relates to layered semiconductor devices, and in some non-limiting examples, to layered optoelectronic devices having a plurality of subpixel light-emitting regions and a plurality of light-transmitting regions, wherein each subpixel comprises first and second electrodes separated by a semiconductor layer, and at least one of the electrodes, a conductive film electrically coupled thereto, and a transmissive region is patterned by depositing a patterning film which can be at least one of acting as a nucleation-inhibiting film for patterning at least one conductive deposition material that can be deposited during a device manufacturing process, and is a nucleation-inhibiting film, thereby forming such electrodes and conductive films, and preventing the deposition of such deposition material, and forming such transmissive regions. [Background technology]

[0003] In optoelectronic devices such as organic light-emitting diodes (OLEDs), at least one semiconductor layer, including an emissive layer, is disposed between a pair of electrodes, such as an anode and a cathode. The anode and cathode are electrically coupled to a power source and can generate holes and electrons, respectively, that move toward each other through at least one semiconductor layer. When a pair of holes and electrons combine, light can be emitted by the emissive layer in the form of photons.

[0004] OLED display panels, such as active-matrix OLED (AMOLED) panels, may comprise multiple pixels, each further comprising multiple subpixels (including, but not limited to, three and four subpixels). In some non-limiting examples, the various subpixels of a pixel may be characterized by any three or four different colors, including, but not limited to, R (red), G (green), and B (blue). Each (sub)pixel may have an associated light-emitting region comprising a laminate of an associated pair of electrodes and at least one semiconductor layer between those electrodes. In some non-limiting examples, each subpixel of a pixel may emit light, including, but not limited to, photons having an associated wavelength spectrum characterized by a given color, including, but not limited to, one of R (red), G (green), B (blue), and W (white). In some non-limiting examples, (sub)pixels may be selectively driven by a driving circuit comprising at least one thin-film transistor (TFT) structure electrically coupled to a conductive metal wire, in some non-limiting examples, within a substrate on which electrodes and at least one semiconducting layer are deposited. In some non-limiting examples, various coatings (layers) of such a panel may be formed by a vacuum-based deposition process.

[0005] In AMOLED panels, light can be emitted by a subpixel when a voltage is applied between the anode and cathode of that subpixel. It may be possible to control the light emission from each subpixel of such a panel by controlling the voltage applied between the anode and cathode. If a common cathode is provided across multiple subpixels, the voltage across the anode and cathode in each subpixel can be controlled by modulating the anode voltage. In some non-limiting examples, adjacent anodes may be spaced laterally apart, and at least one non-emitting region may be provided between them.

[0006] In some non-limiting examples, the objective may be to provide a conductive deposited layer in a pattern over at least one of its sides and cross-sections for each (sub)pixel of a panel by selectively depositing a sealed film of conductive deposited material during the OLED manufacturing process to form device features, including but not limited to one of electrodes, electrically coupled conductive elements, and areas substantially free of deposited material, which are intended to define transparent areas of the device.

[0007] One way to do this, in some non-limiting cases, involves inserting a fine metal mask (FMM) during the deposition of the depositional material. However, such depositional materials have substantially high evaporation temperatures, which affects at least one of the ability to reuse the FMM and the accuracy of the pattern that can be achieved, and consequently, may increase cost, labor, and complexity.

[0008] One method for this involves, in some non-limiting examples, depositing the material and then removing the unwanted areas to form a pattern (including, but not limited to, by a laser drilling process). However, the removal process often involves either the creation or presence of debris, which can affect the yield of the manufacturing process.

[0009] In some non-limiting cases, such methods may be less applicable to certain applications. In some non-limiting cases, such methods may be less applicable to devices with certain surface geometries.

[0010] In some non-limiting applications, the objective may be to provide an improved mechanism for selective deposition of conductive deposition materials. [Brief explanation of the drawing]

[0011] Herein, examples of the present disclosure will be illustrated with reference to the following figures, where the same reference numeral in different figures indicates at least one of the same, and in some non-limiting examples, similar, and corresponding elements. [Figure 1] This is a simplified block diagram from the longitudinal view of an exemplary device having multiple layers on a side surface, formed by selective deposition of a patterning film in a first portion of the side surface, followed by deposition of a sealing film of the deposited material in a second portion thereof, according to an example of the present disclosure. [Figure 2] This is a simplified view from the longitudinal direction of an exemplary version of the device of Figure 1, in which a sealing film of the deposited material in the second portion, according to an example of the present disclosure, forms the second electrode of the optoelectronic device. [Figure 3] This is a schematic diagram showing an exemplary cross-sectional view of an exemplary display panel having multiple layers, each having at least one opening through which at least one electromagnetic signal can be exchanged, according to an example of the present disclosure. [Figure 4] This is a schematic diagram illustrating an exemplary process for depositing a patterned patterned coating on the exposed layer surface of the underlying layer in an exemplary version of the device shown in Figure 1, according to an example of the present disclosure. [Figure 5] Figure 3 is a schematic diagram illustrating an exemplary process for depositing a deposition material onto a second portion of the exposed layer surface, including the deposition pattern of the patterned coating, where the patterned coating is a nucleation inhibitory coating (NIC). [Figure 6A] Figure 1 is a schematic diagram showing an exemplary version of the device in a cross-sectional view. [Figure 6B] This is a schematic diagram showing the device in Figure 6A in a supplementary plan view. [Figure 7A] This schematic diagram illustrates various possible behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 1, based on various examples of the present disclosure. [Figure 7B] This schematic diagram illustrates various possible behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 1, based on various examples of the present disclosure. [Figure 8A] Figure 1 is a simplified block diagram from a cross-sectional view of an exemplary version of the device, illustrating various examples of possible interactions between a particle structure patterning coating and a particle structure, as shown in the examples of the present disclosure. [Figure 8B] Figure 1 is a simplified block diagram from a cross-sectional view of an exemplary version of the device, illustrating various examples of possible interactions between a particle structure patterning coating and a particle structure, as shown in the examples of the present disclosure. [Figure 8C] Figure 1 is a simplified block diagram from a cross-sectional view of an exemplary version of the device, illustrating various examples of possible interactions between a particle structure patterning coating and a particle structure, as shown in the examples of the present disclosure. [Figure 8D] Figure 1 is a simplified block diagram from a cross-sectional view of an exemplary version of the device, illustrating various examples of possible interactions between a particle structure patterning coating and a particle structure, as shown in the examples of the present disclosure. [Figure 8E] Figure 1 is a simplified block diagram from a cross-sectional view of an exemplary version of the device, illustrating various examples of possible interactions between a particle structure patterning coating and a particle structure, as shown in the examples of the present disclosure. [Figure 8F] Figure 1 is a simplified block diagram from a cross-sectional view of an exemplary version of the device, illustrating various examples of possible interactions between a particle structure patterning coating and a particle structure, as shown in the examples of the present disclosure. [Figure 8G] Figure 1 is a simplified block diagram from a cross-sectional view of an exemplary version of the device, illustrating various examples of possible interactions between a particle structure patterning coating and a particle structure, as shown in the examples of the present disclosure. [Figure 8H] Figure 1 is a simplified block diagram from a cross-sectional view of an exemplary version of the device, illustrating various examples of possible interactions between a particle structure patterning coating and a particle structure, as shown in the examples of the present disclosure. [Figure 9] This schematic diagram shows an exemplary cross-sectional view of an exemplary version of the device of Figure 2, having an additional exemplary deposition step, according to an example of the present disclosure. [Figure 10]This is a schematic diagram that may illustrate an exemplary step of an exemplary process for manufacturing an exemplary version of an OLED device having a subpixel region having a second electrode of a different thickness, according to an example of the present disclosure. [Figure 11] This is a schematic diagram showing an exemplary cross-sectional view of an exemplary version of an OLED device in which a second electrode is coupled to an auxiliary electrode, according to an example of the present disclosure. [Figure 12] This schematic diagram shows an exemplary cross-sectional view of an exemplary version of an OLED device having a partition wall and shaded areas such as recesses in a non-emissive region, according to an example of the present disclosure. [Figure 13A] This schematic diagram shows an exemplary cross-sectional view of an exemplary OLED device having a non-emissive region with a partition and a shaded region such as an opening, according to various examples of the present disclosure. [Figure 13B] This schematic diagram shows an exemplary cross-sectional view of an exemplary OLED device having a non-emissive region with a partition and a shaded region such as an opening, according to various examples of the present disclosure. [Figure 14] This is an exemplary energy profile showing the energy state of adsorbed atoms absorbed onto a surface, as an example of this disclosure. [Figure 15] This is a schematic diagram illustrating the formation of a membrane nucleus according to an example of the disclosure. [Figure 16] This is a block diagram of an exemplary computer device in a computing and communications environment that may be used to implement a typical example of a device and method in this disclosure. [Modes for carrying out the invention]

[0012] In this disclosure, some elements / features may be identified by reference numbers, which may not be shown in any of the figures provided herein.

[0013] In this disclosure, a reference number accompanied by at least one of at least one digit (including, but not limited to, at least one superscript and / or subscript) and at least one alphabetic character (including, but not limited to, a lowercase letter) may be considered to refer to at least one of a particular instance or subset thereof of the feature (element) described by that reference number. Referring to a reference number without referring to at least one of the attached digit and / or character may, as the context indicates, generally refer to the feature described by at least one of the reference number and the set of all instances described by it. Similarly, a reference number may have the letter "x" instead of a digit. Referring to such a reference number may, as the context indicates, generally refer to the feature described by the reference number in which the letter "x" is replaced by at least one of the digit and the set of all instances described by it.

[0014] This disclosure includes, but is not limited to, certain details, including, specific architectures, interfaces, and technologies, provided for illustrative purposes only, in order to give a complete understanding of the disclosure. In some cases, detailed descriptions of well-known systems, technologies, components, devices, circuits, methods, and applications are omitted so as not to obscure the description of the disclosure with unnecessary details.

[0015] Furthermore, it will be understood that the block diagrams reproduced herein can represent conceptual diagrams of illustrative components that embody the principles of this technology.

[0016] Accordingly, the components of the systems and methods are represented in the drawings by conventional symbols as necessary, so as not to obscure the disclosure by details that would be readily apparent to those skilled in the art who have an interest in the description herein, and only those specific details relevant to understanding the examples of the disclosure are shown.

[0017] Any drawings provided herein may not be drawn to a specific scale and should not be considered to limit this disclosure.

[0018] Any feature indicated by a dashed outline can be considered optional in some examples.

[0019] overview In a broader embodiment, a layered semiconductor device is disclosed comprising a mixed ligand compound including a cyclophosphazene core portion, a first ligand portion, and a second ligand portion, wherein the first ligand portion and the second ligand portion are each bonded to the core portion.

[0020] In some non-limiting examples, at least one of the first ligand portion and the second ligand portion may be a fluorine (F)-containing portion.

[0021] In some non-limiting examples, each of the first ligand moiety and the second ligand moiety independently contains F, chlorine (Cl), hydroxyl group, substituted alkyl group, unsubstituted alkyl group, substituted fluoroalkyl group, unsubstituted fluoroalkyl group, substituted cycloalkyl group, unsubstituted cycloalkyl group, substituted fluorocycloalkyl group, unsubstituted fluorocycloalkyl group, substituted heterocycloalkyl group, unsubstituted heterocycloalkyl group, substituted fluoroheterocycloalkyl group, unsubstituted fluoroheterocycloalkyl group, substituted alkoxy group, unsubstituted alkoxy group, substituted fluoroalkoxy group, unsubstituted fluoroalkoxy group, substituted aryloxy group, unsubstituted aryloxy group, substituted fluoroaryloxy group, unsubstituted fluoro It may contain at least one of the following: aryloxy group, substituted heteroaryloxy group, unsubstituted heteroaryloxy group, substituted fluoroheteroaryloxy group, unsubstituted fluoroheteroaryloxy group, substituted aryl group, unsubstituted aryl group, substituted fluoroaryl group, unsubstituted fluoroaryl group, substituted alkylsilyl group, unsubstituted alkylsilyl group, substituted alkylsiloxy group, unsubstituted alkylsiloxy group, amino group, amine group, alkylamine group, arylamine group, cyano group, phosphazo group, sulfanyl group, pentafluorosulfanyl group, sulfide group, sulfonyl group, thiol group, alkylthio group, trifluoromethylthio group, carbonyl group, siloxane group, silane group, and organosilicon group.

[0022] In some non-limiting examples, the first ligand portion and the second ligand portion are each linked to linker portion R B , terminal part R T , and linker portion R B and terminal portion R T Intermediate part R located between them D It may include.

[0023] In some non-restrictive examples, the first ligand part and the second ligand part can each be independently represented by equation (E-1).

[0024] [ka] Here, * may represent a bonding point to the cyclophosphazene core moiety, R B represents a linker moiety, R D represents an intermediate moiety, and R T represents a terminal moiety.

[0025] In some non-limiting examples, R B may include one of O, N, S, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted arylene, unsubstituted arylene, substituted heteroarylene, and unsubstituted heteroarylene.

[0026] In some non-limiting examples, R B may be selected from -O- and -O-CH2-.

[0027] In some non-limiting examples, R D may include at least one of O, ether, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted arylene, unsubstituted arylene, substituted phenyl, unsubstituted phenyl, substituted biphenyl, unsubstituted biphenyl, substituted binaphthalene, unsubstituted binaphthalene, substituted heteroarylene, and unsubstituted heteroarylene.

[0028] In some non-limiting examples, R D may be represented by formula (EB-1).

[0029]

Chemical formula

[0030] In some non-restrictive examples, R T This may include at least one of substituted alkyl, unsubstituted alkyl, branched fluoroalkyl, unbranched fluoroalkyl, substituted heterocycloalkyl, unsubstituted heterocycloalkyl, substituted alkoxy, unsubstituted alkoxy, branched silyloxy, unbranched silyloxy, branched fluoroalkoxy, unbranched fluoroalkoxy, fluoroaryl, polyfluorosulfanyl, and fluorocycloalkyl.

[0031] In some non-restrictive examples, R T This may include at least one of F, H, CF2H, CF3, OCF3, CF2CF3, CF2CF2H, CH2CF2H, and CH2CF3.

[0032] In some non-limiting examples, the first ligand moiety and the second ligand moiety may independently comprise at least one of a fluoroalkyl moiety and a fluoroaryl moiety.

[0033] In some non-restrictive examples, the first ligand part can be represented by equation (FCM-1).

[0034] [ka] Here, t is an integer between 1 and 3. u is an integer between 5 and 12. Z represents at least one of H, D, and F.

[0035] In some non-restrictive examples, the second ligand part can be represented by equation (FCM-2).

[0036] [ka] Here, v is an integer between 1 and 3. w is an integer between 3 and 15. Z represents at least one of H, D, and F.

[0037] In some non-limiting examples, a mixed ligand compound may contain multiple at least one of the first ligand moiety and the second ligand moiety.

[0038] In some non-limiting examples, the number of second ligand moieties in a mixed ligand compound may be less than or equal to the number of first ligand moieties within it.

[0039] In some non-restrictive examples, the number of F atoms in the first ligand portion and the second ligand portion may differ by only one of the following: 2 or less, 4 or less, 6 or less, 8 or less, 9 or less, 11 or less, 13 or less, 15 or less, 16 or less, 18 or less, 20 or less, 24 or less, and 48 or less.

[0040] In some non-restrictive examples, the number of CF2 portions of the first ligand portion and the second ligand portion may differ by only one of the following: 1 or less, 2 or less, 3 or less, 4 or less, 5 or less, 6 or less, 7 or less, 8 or less, 9 or less, 10 or less, 11 or less, and 22 or less.

[0041] In some non-restrictive examples, the number of carbon atoms in the first ligand portion and the second ligand portion may differ by only one of the following: 1 or less, 2 or less, 3 or less, 4 or less, 5 or less, 6 or less, 7 or less, 8 or less, 9 or less, 10 or less, 11 or less, and 22 or less.

[0042] In some non-limiting examples, the molar masses attributable to the first ligand portion and the second ligand portion may differ by only one of the following: approximately 20 g / mol or less, approximately 40 g / mol or less, approximately 50 g / mol or less, approximately 100 g / mol or less, approximately 150 g / mol or less, approximately 200 g / mol or less, approximately 300 g / mol or less, approximately 400 g / mol or less, approximately 500 g / mol or less, approximately 600 g / mol or less, approximately 700 g / mol or less, approximately 800 g / mol or less, approximately 900 g / mol or less, and approximately 1,100 g / mol or less.

[0043] In some non-limiting examples, the molar masses attributable to the first ligand portion and the second ligand portion may differ by only one of the following: approximately 20 g / mol or less, approximately 40 g / mol or less, approximately 50 g / mol or less, approximately 100 g / mol or less, approximately 150 g / mol or less, approximately 200 g / mol or less, approximately 300 g / mol or less, approximately 400 g / mol or less, approximately 500 g / mol or less, approximately 600 g / mol or less, approximately 700 g / mol or less, approximately 800 g / mol or less, approximately 900 g / mol or less, and approximately 1,100 g / mol or less.

[0044] In some non-limiting examples, the fluorination degrees of the first ligand portion and the second ligand portion may differ by only one of the following: approximately 0.03 or less, approximately 0.09 or less, approximately 0.14 or less, approximately 0.18 or less, approximately 0.22 or less, approximately 0.28 or less, approximately 0.36 or less, approximately 0.56 or less, approximately 0.71 or less, approximately 0.78 or less, approximately 0.82 or less, approximately 0.99 or less, approximately 1.56 or less, approximately 1.64 or less, approximately 1.78 or less, approximately 1.85 or less, approximately 1.98 or less, approximately 2.34 or less, approximately 3.56 or less, approximately 3.64 or less, and approximately 3.70 or less.

[0045] In some non-limiting examples, the device may include a composition comprising several compounds, where at least one of the several compounds may be a mixed ligand compound, and the several compounds may share at least one ligand moiety.

[0046] In some non-limiting examples, at least one of the multiple compounds may contain one or more of the first ligand moieties of the mixed ligand compound.

[0047] In some non-limiting examples, the number of at least one other first ligand moiety among multiple compounds may be equal to the sum of the number of first ligand moieties and the number of second ligand moieties in the mixed ligand compound.

[0048] In some non-limiting examples, at least one other ligand moiety among several compounds may be substantially composed of the first ligand moiety.

[0049] In some non-limiting examples, the mixed ligand compound may include one second ligand moiety, and the remainder of the ligand moiety of the mixed ligand compound may be substantially composed of the first ligand moiety.

[0050] In some non-limiting examples, the majority of the composition may consist substantially of mixed ligand compounds, and the remainder of the composition may consist substantially of at least one other of several compounds.

[0051] In some non-limiting examples, the mixed ligand compound may constitute one of approximately 50%, 60%, 70%, 75%, 80%, 85%, 90%, 95%, 98%, and 99% of the composition.

[0052] In some non-limiting examples, a mixed ligand compound may contain the first ligand moiety and the second ligand moiety in a ratio of approximately 1:1 in terms of the number of ligand moieties in the compound.

[0053] In some non-limiting examples, at least one of several compounds may contain the first ligand moiety and the second ligand moiety in a ratio of at least about 1:2, at least about 2:1, at least about 1:5, and at least about 5:1, in terms of the number of ligand moieties composed of such compound.

[0054] In some non-limiting examples, the proportion of a composition that is a mixed ligand compound may be greater than or equal to the proportion of any other compound in the composition.

[0055] In some non-limiting examples, the difference in the molar mass of each of the multiple compounds in the composition may be one of the following: approximately 4,300 g / mol or less, approximately 4,000 g / mol or less, approximately 3,700 g / mol or less, approximately 3,500 g / mol or less, approximately 3,100 g / mol or less, approximately 2,800 g / mol or less, approximately 2,400 g / mol or less, approximately 2,200 g / mol or less, approximately 1,800 g / mol or less, approximately 1,400 g / mol or less, approximately 1,200 g / mol or less, approximately 900 g / mol or less, approximately 800 g / mol or less, approximately 700 g / mol or less, approximately 600 g / mol or less, approximately 500 g / mol or less, approximately 400 g / mol or less, approximately 300 g / mol or less, approximately 200 g / mol or less, approximately 100 g / mol or less, approximately 40 g / mol or less, and approximately 20 g / mol or less.

[0056] In some non-limiting examples, the polydispersity of the composition may be one of approximately 2.08 or less, approximately 2.06 or less, approximately 2.04 or less, approximately 2.02 or less, and approximately 2.00 or less.

[0057] In some non-limiting examples, multiple compounds in a composition may each exhibit substantially the same vapor pressure.

[0058] In some non-limiting examples, at least one of a plurality of compounds may comprise a first ligand moiety containing a fluoroalkyl moiety and a second ligand moiety containing at least one of a substituted alkyl moiety, an unsubstituted alkyl moiety, a substituted fluoroalkyl moiety, an unsubstituted fluoroalkyl moiety, a substituted fluoroaryl moiety, an unsubstituted fluoroaryl moiety, a substituted aryl moiety, an unsubstituted aryl moiety, a substituted polycyclic aromatic moiety, an unsubstituted polycyclic aromatic moiety, a substituted binaphthyl moiety, an unsubstituted binaphthyl moiety, a substituted biphenyl moiety, an unsubstituted biphenyl moiety, a substituted adamantyl moiety, and an unsubstituted adamantyl moiety.

[0059] In some non-limiting examples, the core portion of each compound may be a cyclophosphazene moiety.

[0060] In some non-limiting examples, the device may further include a patterning coating comprising a mixed ligand compound, disposed on a first layer surface of a base layer in a first portion of the lateral surface of the base layer, and a deposited layer made of a deposited material disposed in a second portion, wherein the first portion substantially lacks a sealing coating of the deposited material.

[0061] In some non-limiting examples, patterned coatings can be adapted to reduce the initial adhesion probability of vapor flux to conductive deposited materials.

[0062] In some non-limiting examples, the device may further include a substrate, a first electrode, a second electrode, and at least one semiconductor layer disposed between the first electrode and the second electrode, wherein the first electrode is disposed between the substrate and the at least one semiconductor layer.

[0063] In some non-restrictive examples, the first part may exclude the lateral surfaces of the light-emitting region.

[0064] In some non-limiting examples, the second electrode may include at least a portion of the sedimentary layer as its layer.

[0065] In some non-restrictive examples, the first portion may include the lateral surface of the luminescent region.

[0066] In some non-limiting examples, the device may further include auxiliary electrodes, which may have a deposited layer as its layer.

[0067] In a broader embodiment, a composition comprising multiple compounds is disclosed, each of which may comprise a cyclophosphazene core portion and at least one ligand portion bonded to the cyclophosphazene core portion, and the multiple compounds may share at least one ligand portion in common.

[0068] In some non-limiting examples, at least one of the multiple compounds may contain at least one of the first ligand moiety and the second ligand moiety.

[0069] In some non-limiting examples, the composition may comprise a first compound comprising at least one first ligand moiety and at least one second ligand moiety, and a second compound comprising at least one first ligand moiety of the first compound.

[0070] In some non-limiting examples, at least one compound in the composition may contain a ligand moiety that is not present in any other compound in the composition.

[0071] In some non-restrictive examples, the number of first ligand parts in the second compound may be equal to the sum of the number of first ligand parts and the number of second ligand parts in the first compound.

[0072] In some non-limiting examples, the number of second ligand moieties in at least one of the first and second compounds may be less than or equal to the number of first ligand moieties in it.

[0073] In some non-limiting examples, the ligand moiety of the first compound may be substantially composed of a first ligand moiety and a second ligand moiety.

[0074] In some non-limiting examples, the ligand moiety of the second compound may be substantially composed of the first ligand moiety.

[0075] In some non-limiting examples, the first compound may contain one second ligand moiety, and the remainder of the ligand moiety of the first compound may be substantially composed of the first ligand moiety.

[0076] In some non-limiting examples, the majority of the composition may consist substantially of the first compound, and the remainder of the composition may consist substantially of the second compound.

[0077] In some non-limiting examples, the first compound may constitute one of about 50%, about 60%, about 70%, about 75%, about 80%, about 85%, about 90%, about 95%, about 98%, and about 99% of the composition.

[0078] In some non-limiting examples, each of the multiple compounds may contain a first ligand moiety and a second ligand moiety.

[0079] In some non-limiting examples, the first compound may contain the first ligand moiety and the second ligand moiety in a ratio of approximately 1:1, based on the number of ligand moieties in the compound.

[0080] In some non-limiting examples, the composition may include at least one additional compound comprising a first ligand portion and a second ligand portion in a ratio of approximately 1:2, approximately 2:1, approximately 1:5, and approximately 5:1, in relation to the number of ligand portions composed of such compound.

[0081] In some non-limiting examples, the proportion of the first compound in the composition may be greater than or equal to the proportion of any other compound in the composition.

[0082] In some non-limiting examples, the difference in the molar mass of each of the multiple compounds in the composition may be one of the following: approximately 4,300 / mol or less, approximately 4,000 / mol or less, approximately 3,700 / mol or less, approximately 3,500 / mol or less, approximately 3,100 / mol or less, approximately 2,800 / mol or less, approximately 2,400 / mol or less, approximately 2,200 / mol or less, approximately 1,800 / mol or less, approximately 1,400 / mol or less, approximately 1,200 / mol or less, approximately 900 / mol or less, approximately 800 / mol or less, approximately 700 / mol or less, approximately 600 / mol or less, approximately 500 / mol or less, approximately 400 / mol or less, approximately 300 / mol or less, approximately 200 / mol or less, approximately 100 / mol or less, approximately 40 / mol or less, and approximately 20 g / mol or less.

[0083] In some non-limiting examples, the polydispersity of the composition may be one of approximately 2.08 or less, approximately 2.06 or less, approximately 2.04 or less, approximately 2.02 or less, and approximately 2.00 or less.

[0084] In some non-limiting examples, the compounds in a composition may each exhibit substantially the same vapor pressure.

[0085] In some non-limiting examples, at least one ligand portion is the linker portion R B , terminal part R T , and linker portion R B and terminal portion R T Intermediate part R located between them D It may include.

[0086] In some non-restrictive examples, the linker part R B This may include one of O, N, S, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted arylene, unsubstituted arylene, substituted heteroarylene, and unsubstituted heteroarylene.

[0087] In some non-restrictive examples, terminal portion R T This can be one of CF3, CF2CF2, CH2CF2H, and CF2H.

[0088] In some non-limiting examples, at least one ligand moiety may include at least one of a fluoroalkyl moiety and a fluoroaryl moiety.

[0089] In some non-limiting examples, the first ligand portion and the second ligand portion may be F-containing portions.

[0090] In some non-limiting examples, the second ligand moiety is fluorinated sp 2 It may substantially lack carbon atoms.

[0091] In some non-limiting examples, the second ligand moiety may substantially lack F.

[0092] In some non-limiting examples, at least one of the plurality of compounds may include a first ligand moiety containing a fluoroalkyl moiety and a second ligand moiety containing at least one of a substituted alkyl moiety, an unsubstituted alkyl moiety, a substituted fluoroalkyl moiety, an unsubstituted fluoroalkyl moiety, a substituted fluoroaryl moiety, an unsubstituted fluoroaryl moiety, a substituted aryl moiety, an unsubstituted aryl moiety, a substituted polycyclic aromatic moiety, an unsubstituted polycyclic aromatic moiety, a substituted binaphthyl moiety, an unsubstituted binaphthyl moiety, a substituted biphenyl moiety, an unsubstituted biphenyl moiety, a substituted adamantyl moiety, and an unsubstituted adamantyl moiety.

[0093] In some non-limiting examples, the second ligand moiety may contain a number of F atoms that is less than or equal to the number of F atoms in the first ligand moiety.

[0094] In some non-limiting examples, the second ligand moiety may have a degree of fluorination that is less than or equal to the degree of fluorination of the first ligand moiety.

[0095] In some non-limiting examples, the number of F atoms in the first ligand moiety and the second ligand moiety may differ by only one of 2 or less, 4 or less, 6 or less, 8 or less, 9 or less, 11 or less, 13 or less, 15 or less, 16 or less, 18 or less, 20 or less, 24 or less, and 48 or less.

[0096] In some non-limiting examples, the number of CF2 moieties in the first ligand moiety and the second ligand moiety may differ by only one of 1 or less, 2 or less, 3 or less, 4 or less, 5 or less, 6 or less, 7 or less, 8 or less, 9 or less, 10 or less, 11 or less, and 22 or less.

[0097] In some non-limiting examples, the number of C atoms in the first ligand moiety and the second ligand moiety may differ by only one of 1 or less, 2 or less, 3 or less, 4 or less, 5 or less, 6 or less, 7 or less, 8 or less, 9 or less, 10 or less, 11 or less, and 22 or less.

[0098] In some non-limiting examples, the molar masses attributable to the first ligand portion and the second ligand portion may differ by only one of the following: approximately 20 g / mol or less, approximately 40 g / mol or less, approximately 50 g / mol or less, approximately 100 g / mol or less, approximately 150 g / mol or less, approximately 200 g / mol or less, approximately 300 g / mol or less, approximately 400 g / mol or less, approximately 500 g / mol or less, approximately 600 g / mol or less, approximately 700 g / mol or less, approximately 800 g / mol or less, approximately 900 g / mol or less, and approximately 1,100 g / mol or less.

[0099] In some non-limiting examples, the fluorination degrees of the first ligand portion and the second ligand portion may differ by only one of the following: approximately 0.03 or less, approximately 0.09 or less, approximately 0.14 or less, approximately 0.18 or less, approximately 0.22 or less, approximately 0.28 or less, approximately 0.36 or less, approximately 0.56 or less, approximately 0.71 or less, approximately 0.78 or less, approximately 0.82 or less, approximately 0.99 or less, approximately 1.56 or less, approximately 1.64 or less, approximately 1.78 or less, approximately 1.85 or less, approximately 1.98 or less, approximately 2.34 or less, approximately 3.56 or less, approximately 3.64 or less, and approximately 3.70 or less.

[0100] In some non-limiting examples, the cyclophosphazene core portion may be one of the cyclotriphosphazene and cyclotetraphosphazene portions.

[0101] In a broader embodiment, a device comprising a composition is disclosed.

[0102] Detailed description of the invention Layered devices This disclosure generally relates to layered semiconductor devices 100, and more specifically to optoelectronic devices 200. Optoelectronic devices 200 can generally encompass any device 100 that converts electrical signals into light (in the form of photons) and vice versa. In some non-limiting examples, optoelectronic devices 200 may include organic light-emitting diodes (OLEDs).

[0103] Those skilled in the art will understand that although this disclosure relates to an optoelectronic device 200, the principle may be applicable to any panel having multiple layers, including, but not limited to, at least one layer of conductive deposition material 531, including layers as thin films, and in some non-limiting examples, an electromagnetic (EM) signal may pass through it partially and / or completely at a non-zero angle with respect to the plane of at least one layer (including, but not limited to, this condition).

[0104] Now, looking at Figure 1, a cross-sectional view of an exemplary layered semiconductor device 100 may be shown. In some non-limiting examples, the device 100 may include multiple layers deposited on a substrate 10, as shown in more detail in Figure 2.

[0105] A first lateral axis, identified as the X-axis, may be shown together with a longitudinal axis, identified as the Z-axis. A second lateral axis, identified as the Y-axis, may be shown as substantially crossing both the X-axis and the Z-axis. At least one of the lateral axes can define a lateral surface of the device 100. The longitudinal axis can define a longitudinal surface of the device 100.

[0106] The layers of device 100 may extend laterally, substantially parallel to a plane defined by a lateral axis. Those skilled in the art will understand that the substantially planar representation shown in Figure 1 may be abstracted for illustrative purposes in some non-limiting examples. In some non-limiting examples, there may be localized substantially planar layers of different thicknesses and dimensions over the lateral extent of device 100, and in some non-limiting examples, at least one of the layers separated by non-planar transition areas (including lateral gaps and further discontinuities) may not be substantially complete.

[0107] Therefore, for illustrative purposes, device 100 may be shown in its longitudinal plane as a substantially hierarchical structure of substantially parallel planar layers, but such device 100 may locally exhibit a variety of topographies for defining features, each of which may substantially exhibit the hierarchical profile considered in the longitudinal plane.

[0108] In some non-limiting examples, the lateral surface of the exposed layer surface 11 of device 100 may include a first portion 101 and a second portion 102. In some non-limiting examples, the second portion 102 may include the portion of the exposed layer surface 11 of device 100 that extends beyond the first portion 101. As shown in Figure 1, the layers of device 100 may include a substrate 10 and a patterning coating 110 disposed on at least a portion of the exposed layer surface 11 on its side. In some non-limiting examples, the patterning coating 110 may have a lateral extent limited to the first portion 101, and the deposited layer 130 may be disposed as a sealing coating 140 on the exposed layer surface 11 of device 100 in the second portion 102 of its lateral surface.

[0109] In some non-limiting examples, at least one particle structure 150 may be disposed as a discontinuous layer 160 on the exposed layer surface 11 of the patterning film 110. In some non-limiting examples, although not shown, at least one of the patterning film 110, the deposited layer 130, and the at least one particle structure 150 may be deposited on a layer other than the substrate 10 (underlayment layer 710), which includes but is not limited to an intervening layer between the substrate 10 and one of the patterning film 110, the deposited layer 130, and the at least one particle structure 150. In some non-limiting examples, the underlayment layer 710 may include at least one of an orientation layer and an organic support layer.

[0110] In some non-limiting examples, at least one of the patterned coating 110, the deposited layer 130, and the at least one particle structure 150 may be covered by at least one upper layer 170.

[0111] In some non-limiting examples, such upper layer 170 may include at least one of a sealing layer and an optical coating. In some non-limiting examples, the sealing layer may include at least one of a glass cap, barrier film, barrier adhesive, barrier coating, sealing layer, and thin-film sealing (TFE) layer provided to seal the device 100. In some non-limiting examples, the optical coating may include, but not limited to, a polarizer, color filter, anti-reflective coating, anti-glare coating, cover glass, and optically clear adhesive (OCA), at least one of the optics, and structure, coating, and at least one of its components.

[0112] In some non-limiting examples, at least one of the substantially thin patterning coating 110 of the first portion 101 and the deposited layer 130 of the second portion 102 may provide a substantially flat surface on which the top layer 170 can be deposited. In some non-limiting examples, providing such a substantially flat surface for the application of such top layer 170 can increase its adhesion to such surface.

[0113] In some non-limiting examples, the optical properties of at least one of the following types of light transmitted, emitted, and absorbed by device 100, including but not limited to plasmon modes, can be tuned using an optical coating. In some non-limiting examples, the optical coating may be used as at least one of the following: an optical filter, a refractive index matching coating, a light extraction coating, a scattering layer, a diffraction grating, and a part thereof.

[0114] In some non-limiting examples, at least one optical microcavity effect within device 100 can be adjusted using an optical coating (but not limited thereto) by modulating at least one of the total optical path length and its refractive index. At least one optical property of device 100 can be affected by modulating at least one optical microcavity effect, including but not limited to output light including at least one of the angular dependence of intensity and its wavelength shift. In some non-limiting examples, the optical coating may be a non-electrical component, i.e., the optical coating may not be configured to conduct and transmit at least one of current during normal device operation.

[0115] In some non-limiting examples, the optical coating may be formed from any deposition material 531, and in some non-limiting examples, any mechanism for depositing the deposition layer 130 as described herein may be employed.

[0116] Patterning In some non-limiting examples, referring to FIG. 1, a patterning coating 110 including a patterning material 411, which may be a nucleation inhibition coating (NIC) material in some non-limiting examples, may be disposed as a sealing coating 140 on the exposed layer surface 11 of an underlying layer 710 including but not limited to the substrate 10 of device 100 in some non-limiting examples, and the lateral extent is limited by selective deposition including but not limited to using a shadow mask 415 such as a fine metal mask (FMM) including but not limited to a first portion 101 in some non-limiting examples.

[0117] Thus, in some non-limiting examples, in the second portion 102 of device 100, the exposed layer surface 11 of the underlying layer 710 of device 100 may substantially lack the sealing coating 140 of the patterning coating 110.

[0118] Patterning coating The patterning coating 110 may include the patterning material 411. In some non-limiting examples, the patterning coating 110 may include a sealing coating 140 of the patterning material 411.

[0119] The patterning coating 110 can provide an exposed layer surface 11 that has a substantially low tendency (including, but not limited to, a substantially low initial adhesion probability) to deposit the deposit material 531 when such surface is exposed to the vapor flux 532 of the deposit material 531 (in some non-limiting examples, under the conditions specified in the dual QCM technique described by Walker et al.), and in some non-limiting examples, this tendency can be substantially lower than the tendency for the deposit material 531 to deposit on the exposed layer surface 11 of the underlying layer 710 of the device 100 on which the patterning coating 110 is deposited.

[0120] Due to attributes of the deposition of the deposited material 531, including but not limited to a low initial adhesion probability of at least one of the patterning coating 110 and the patterning material 411, in some non-limiting examples, when deposited as at least one of the forms of a film and a coating, and under similar circumstances to the deposition of the patterning coating 110 in the device 100, the exposed layer surface 11 of the first portion 101 including the patterning coating 110 may substantially lack a sealing coating 140 of the deposited material 531.

[0121] However, exposure of the device 100 to the vapor flux 532 of the deposited material 531 may, in some non-limiting examples, result in the formation of a sealing film 140 of the deposited layer 130 of the deposited material 531 in the second portion 102, and the exposed layer surface 11 of the underlying layer 710 may substantially lack the patterning film 110.

[0122] Therefore, in some non-limiting examples, the patterning film 110 may provide high patterning contrast (NIC) for subsequent deposition of the deposited material 531, and as a result, in some non-limiting examples, the deposited material 531 tends not to be deposited as a sealed film 140 on which the patterning film 110 is deposited.

[0123] In some non-limiting examples, the patterned coating 110 may include the patterned material 411. In some non-limiting examples, the patterned material 411 may include the NIC material. In some non-limiting examples, the patterned coating 110 may include the sealing coating 140 of the patterned material 411.

[0124] In some non-limiting examples, there may be scenarios where the patterning coating 110 on a first portion 101 is required to provide a patterning coating 110 that, when subjected to a vapor flux 532 of the deposited material 531, causes the formation of a discontinuous layer 160 of at least one particulate structure 150. In at least some applications, the attributes of the patterning coating 110 may be such that a sealing coating 140 of the deposited material 531 may be formed on a second portion 102 where the patterning coating 110 is substantially absent, while only a discontinuous layer 160 of at least one particulate structure 150 having at least one characteristic may be formed on the first portion 101 of the patterning coating 110.

[0125] To simplify the discussion, in this disclosure, insofar as the patterning film 110 is deposited and serves as a base for depositing at least one particle structure 150 thereon, such patterning film 110 is a particle structure patterning film 110 p It can be called a patterning film 110. In contrast, as long as the patterning film 110 is deposited on the first portion 101 and substantially prevents the formation of a sealing film 140 of the deposited layer 130 on such first portion 101, and thus limits the deposition of the sealing film 140 of the deposited layer 130 to the second portion 102, such patterning film 110 is a non-particulate patterning film 110. nIt may be specified as. As those skilled in the art will know, in some non-limiting examples, the patterning coating 110 is a particle structure patterning coating 110 p and non-particulate structure patterning coating 110 n- You will come to understand that it can function as both.

[0126] In some non-limiting examples, while depositing a sealed coating 140 of a deposited material 531 having a thickness of approximately 100 nm or less, approximately 75 nm or less, approximately 50 nm or less, approximately 25 nm or less, and approximately 15 nm or less (but not limited to these examples), in the second portion 102, there may be scenarios that require forming a discontinuous layer 160 of at least one particle structure 150 of the deposited material 531, which may be one of metals and metal alloys (metals / alloys) containing at least one of ytterbium (Yb), silver (Ag), magnesium (Mg), and Ag-containing materials (including but not limited to MgAg). In some non-limiting examples, the amount of deposited material 531 deposited as a discontinuous layer 160 of at least one particle structure 150 in the first portion 101 may correspond to one of approximately 1-50%, approximately 2-25%, approximately 5-20%, and approximately 7-10% of the amount of deposited material 531 deposited as a sealing film 140 in the second portion 102, and in non-limiting examples, may correspond to one of approximately 100 nm or less, approximately 75 nm or less, approximately 50 nm or less, approximately 25 nm or less, and approximately 15 nm or less.

[0127] In some non-limiting examples, the patterning coating 110 may be arranged in a pattern that can be defined by at least one region thereof, which may substantially lack a sealing coating 140 of the patterning coating 110.

[0128] In some non-limiting examples, the patterned coating 110 can be separated into multiple individual fragments by at least one region. In some non-limiting examples, the multiple individual fragments of the patterned coating 110 can be physically separated from each other laterally. In some non-limiting examples, the multiple individual fragments of the patterned coating 110 may be arranged in a regular structure including, but not limited to, an array (matrix), and as a result, in some non-limiting examples, the individual fragments of the patterned coating 110 may consist of repeating patterns.

[0129] In some non-limiting examples, at least one of the individual fragments of the patterned coating 110 may each correspond to an emissive region 210. In some non-limiting examples, the aperture ratio of the emissive region 410 may be one of approximately 50% or less, approximately 40% or less, approximately 30% or less, and approximately 20% or less.

[0130] In some non-limiting examples, the patterning coating 110 may be formed as a single monolithic coating.

[0131] Patterning coating / Material attributes composition In some non-limiting examples, a mixed ligand compound may be provided, which comprises a core portion, a first ligand portion, and a second ligand portion, the first ligand portion and the second ligand portion may each be bonded to the core portion.

[0132] In some non-limiting examples, a layered semiconductor device 100 comprising a mixed ligand compound may be provided. In some non-limiting examples, the mixed ligand compound may comprise a core portion, a first ligand portion, and a second ligand portion. In some non-limiting examples, the first portion and the second portion may each be bonded to the core portion.

[0133] In some non-limiting examples, a layered semiconductor device 100 comprising a composition comprising multiple compounds may be provided. In some non-limiting examples, at least one of the multiple compounds may be a mixed ligand compound. In some non-limiting examples, each of the multiple compounds may comprise a core portion and multiple ligand portions bonded to the core portion. In some non-limiting examples, the multiple compounds may comprise at least one common ligand portion. In some non-limiting examples, at least one of the multiple compounds may comprise at least one of a first ligand portion and a second ligand portion. In some non-limiting examples, each of the multiple compounds may comprise a core portion, a first ligand portion, and a second ligand portion. In some non-limiting examples, the first portion and the second portion may each be bonded to the core portion.

[0134] In some non-limiting examples, compositions comprising multiple compounds can be provided. In some non-limiting examples, each compound comprising multiple compounds may comprise a cyclophosphazene core portion and at least one ligand portion bonded to the cyclophosphazene core portion. In some non-limiting examples, multiple compounds may comprise at least one common ligand portion.

[0135] Ligand part As used herein, the term “ligand portion” can generally be understood to refer to at least one of the first ligand portion and the second ligand portion.

[0136] In some non-limiting examples, the ligand moieties are independently F, chlorine (Cl), hydroxyl group, substituted alkyl group, unsubstituted alkyl group, substituted fluoroalkyl group, unsubstituted fluoroalkyl group, substituted cycloalkyl group, unsubstituted cycloalkyl group, substituted fluorocycloalkyl group, unsubstituted fluorocycloalkyl group, substituted heterocycloalkyl group, unsubstituted heterocycloalkyl group, substituted fluoroheterocycloalkyl group, unsubstituted fluoroheterocycloalkyl group, substituted alkoxy group, unsubstituted alkoxy group, substituted fluoroalkoxy group, unsubstituted fluoroalkoxy group, substituted aryloxy group, unsubstituted aryloxy group, substituted fluoroaryloxy group, unsubstituted fluoroaryloxy group. It may contain at least one of the following: substituted heteroaryloxy group, unsubstituted heteroaryloxy group, substituted fluoroheteroaryloxy group, unsubstituted fluoroheteroaryloxy group, substituted aryl group, unsubstituted aryl group, substituted fluoroaryl group, unsubstituted fluoroaryl group, substituted alkylsilyl group, unsubstituted alkylsilyl group, substituted alkylsiloxy group, unsubstituted alkylsiloxy group, amino group, amine group, alkylamine group, arylamine group, cyano group, phosphazo group, sulfanyl group, pentafluorosulfanyl group, sulfide group, sulfonyl group, thiol group, alkylthio group, trifluoromethylthio group, carbonyl group, siloxane group, silane group, and organosilicon group.

[0137] In some non-limiting examples, at least one ligand portion (including, but not limited to, at least one of the first ligand portion and the second ligand portion) may be an F-containing portion. In some non-limiting examples, the first ligand portion may be an F-containing portion, and the second ligand portion may substantially lack F. In some non-limiting examples, both the first ligand portion and the second ligand portion may be F-containing portions.

[0138] In some non-limiting examples, at least one ligand portion may include a skeleton and at least one F atom bonded thereto. In some non-limiting examples, the skeleton may be a C-containing skeleton. In some non-limiting examples, the skeleton may include heteroatoms that include but are not limited to silicon (Si).

[0139] In some non-restrictive examples, the ligand portion is the linker portion R B , terminal part R T , and linker portion R B and terminal portion R T Intermediate part R located between them D It may include.

[0140] In some non-restrictive examples, the ligand portion may be represented by chemical formula (E-1).

[0141] [ka] During the ceremony, * This indicates the bonding site within the compound. R B This represents the linker section, R D This represents the middle part, and R T This represents the end portion.

[0142] In some non-restrictive examples, the ligand portion is the branching portion R. E It may include. In some non-restrictive examples, such ligand parts may include one of the chemical formulas (E-2) to (E-4).

[0143] [Table 1]

[0144] In some non-limiting examples, the ligand portion may contain at least one saturated bond. In some non-limiting examples, the bonds of the ligand portion may consist substantially of saturated bonds, such that the ligand portion may be a saturated portion. In some non-limiting examples, R B , R D , R T , and R E At least one portion of the ligand moiety, which includes but is not limited to at least one of the following, may be a saturated portion. In some non-limiting examples, the ligand moiety may include unsaturated bonds. In some non-limiting examples, the bonding of the ligand moiety may consist substantially of saturated bonds, such that the ligand moiety may be a saturated portion. In some non-limiting examples, R B , R D , R T , and R E At least one portion of the ligand portion, which includes but is not limited to at least one of the following, may be an unsaturated portion.

[0145] In some non-restrictive examples, the ligand moiety may contain one of approximately 4, 3, 2, or 1 or fewer ether units. While we do not wish to be bound by any particular theory, it is assumed that the presence of multiple ether units within a single ligand moiety may reduce the melting point of the compound, which may be less applicable in some scenarios.

[0146] In some non-restrictive examples, the linker part R B This may correspond to the terminal portion of the ligand portion that may be close to the core portion, and may include an atom that bonds the ligand portion to the core portion. In some non-limiting examples, R B This may include one of O, N, S, substituted alkylenes, unsubstituted alkylenes, substituted fluoroalkylenes, unsubstituted fluoroalkylenes, substituted cycloalkylenes, unsubstituted cycloalkylenes, substituted arylenes, unsubstituted arylenes, substituted heteroarylenes, and unsubstituted heteroarylenes. In some non-limiting examples, R B It may contain P=N and one of the phosphazene groups. In some non-restrictive examples, RB This includes at least one of fluoromethylene and difluoromethylene. In some non-limiting examples, R B This can be selected from -O- and -O-CH2-.

[0147] In some non-restrictive examples, the intermediate part R D This can generally correspond to a portion of the ligand portion located between the linker portion and the terminal portion. In some non-limiting examples, R D This may include O, ether, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted arylene, unsubstituted arylene, substituted phenyl, unsubstituted phenyl, substituted biphenyl, unsubstituted biphenyl, substituted binaphthalene, unsubstituted binaphthalene, substituted heteroarylene, and unsubstituted heteroarylene. In some non-limiting examples, R D It may include F. In some non-restrictive examples, R D It may contain fluoroalkylene units. In some non-limiting examples, R D This may include at least one of CF2 units, CFH units, and CH2 units. In some non-limiting examples, R D It may contain multiple CF2 units that bond together to form a fluoroalkylene and one of its subunits. In some non-limiting examples, R D This may include at least one CH2 unit and at least one CF2 unit. In some non-limiting examples, R D This may include etheric units. In some non-restrictive examples, R D This may include saturated bonds. In some non-restrictive examples, R D It may substantially lack unsaturated bonds. In some non-restrictive examples, R D This may include unsaturated bonds. In some non-restrictive examples, R D It may contain one carbon atom among approximately 25 or fewer, approximately 15 or fewer, approximately 13 or fewer, approximately 12 or fewer, and approximately 10 or fewer.

[0148] In some non-restrictive examples, terminal portion R T The core portion may correspond to the terminal portion of the ligand portion, including but not limited to the distal portion of the ligand portion. In some non-limiting examples, the terminal portion may correspond to the terminal portion of the ligand portion opposite to the linker portion. In some non-limiting examples, the ligand portion includes an annular intermediate portion, R T This may include a portion bonded to the ring atom in the intermediate part. In some non-limiting examples, R T It may include F. In some non-restrictive examples, R T It may contain hydrogen (H). In some non-restrictive examples, R T It may contain Si. In some non-restrictive examples, R T This may include at least one of substituted alkyl, unsubstituted alkyl, branched fluoroalkyl, unbranched fluoroalkyl, substituted heterocycloalkyl, unsubstituted heterocycloalkyl, substituted alkoxy, unsubstituted alkoxy, branched silyloxy, unbranched silyloxy, branched fluoroalkoxy, unbranched fluoroalkoxy, fluoroaryl, polyfluorosulfanyl, and fluorocycloalkyl. In some non-limiting examples, R T This can be at least one of F, H, CF2H, CF3, OCF3, CF2CF3, CF2CF2H, CH2CF2H, and CH2CF3. In some non-limiting examples, R T It may contain one carbon atom among approximately 8 or fewer, approximately 6 or fewer, approximately 5 or fewer, approximately 3 or fewer, approximately 2 or fewer, and approximately 1 or fewer.

[0149] Branching section R E This generally corresponds to a portion of the ligand where multiple branches of the skeleton may extend. In some non-restrictive examples, R E It can act as a branching point in the skeleton. In some non-restrictive examples, the branching point can cause at least three or more of the other parts that form the ligand part to R E This can occur by joining to R. In some non-restrictive examples, E The ligand part may take various arrangements (positions), R B , R D , and RT may be coupled to at least one of them. In some non-limiting examples, R E At least three moieties attached to R B R D and R T ; R B R B and R B ; R D R D and R D ; and R T R T and R T may be one of them. In some non-limiting examples, R E is a ligand moiety having a plurality of R D and R T and may be coupled to at least one of a plurality of R D and a plurality of R T . In some non-limiting examples, R E may include at least one of O, N, S, amine, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted heterocycloalkylene, unsubstituted heterocycloalkylene, substituted arylene, unsubstituted arylene, substituted heteroarylene, and unsubstituted heteroarylene. In some non-limiting examples, R E may contain one of C atoms of about 8 or less, about 6 or less, about 5 or less, about 3 or less, about 2 or less, and about 1 or less. In some non-limiting examples, R E may be in a state substantially lacking C atoms.

[0150] In some non-limiting examples, R B of Chemical Formula (E-1) may be represented by one of Chemical Formulas (EA-1) to (EA-6).

[0151]

Table 2

[0152] In some non-restrictive examples, terminal portion R T R is the intermediate part of the secondary ligand portion. D It can be coupled to

[0153] In some non-restrictive examples, the secondary ligand portion may be represented by the chemical formula (ED-1).

[0154] [ka]

[0155] In some non-limiting examples, the R of the secondary ligand portion of the chemical formula (ED-1) D and R T This is the R of the ligand portion of the chemical formula (E-1). D and R T The molecular structure may be identical. In some non-limiting examples, the R of the secondary ligand portion of chemical formula (ED-1) D and R T At least one of these may differ from that of the ligand portion of chemical formula (E-1). In some non-limiting examples, R provided herein with respect to the ligand portion of chemical formula (E-1) D and R T Explanations of various non-limiting examples include the R of the secondary ligand portion of the chemical formula (ED-1). D and R T It can be applied to this.

[0156] In some non-restrictive examples, R of chemical formula (E-1) D It can be represented by the chemical formula (EB-1).

[0157] [ka] During the ceremony, Each X is independently one of H, D, F, and CF3. a is an integer between 0 and 6. b is an integer between 0 and 12. The sum of a and b is 1 or greater.

[0158] In some non-restrictive examples, the sum of a and b can be one of the following: approximately 15 or less, approximately 12 or less, approximately 10 or less, and approximately 9 or less.

[0159] In some non-limiting examples, R by chemical formula (EB-1) D It may contain at least one of the chemical formulas (EB-10) to (EB-21).

[0160] [Table 3]

[0161] In some non-restrictive examples, a can be an integer between 1 and 4, b can be an integer between 4 and 9, and the sum of a and b can be an integer between 6 and 13.

[0162] In some non-restrictive examples, a can be an integer between 2 and 4, b can be an integer between 5 and 9, and the sum of a and b can be an integer between 7 and 13.

[0163] In some non-restrictive examples, R in chemical formula (E-1) T It can be represented by one of the chemical formulas (EC-1) to (EC-11).

[0164] [Table 4]

[0165] In some non-limiting examples, the ligand moiety may include a C-containing skeleton of a ring-closed structure, and in some non-limiting examples, may form a cyclic structure comprising at least one of fluorocycloalkyl (including but not limited to perfluorocyclopentyl and perfluorocyclohexyl), aryl (including but not limited to phenyl and naphthyl), and biaryl (including but not limited to biphenyl and binaphthyl).

[0166] In some non-limiting examples, the ligand portion may include a closed-cage structure containing adamantyl, but not limited to adamantyl.

[0167] In some non-limiting examples, the ligand moiety may include, but is not limited to, a fluorine-containing moiety that includes a fluoroalkyl moiety and a fluoroaryl moiety.

[0168] Those skilled in the art will know, in some non-limiting examples, R B , R D , R E , and R T You will understand that the various descriptions may apply to several non-limiting examples of ligand parts, including but not limited to those of chemical formulas (E-2) to (E-4). In some non-limiting examples, the ligand part may have multiple R B , multiple R D , multiple R E , and multiple R T If it includes multiple given parts, each such part can be selected independently of the others, including at least one of the above.

[0169] In some non-restrictive examples, a compound may contain a ligand moiety selected from one of the chemical formulas (F-1) to (F-314).

[0170] [Table 5-1]

[0171] Table 5-2

[0172] Table 5-3

[0173] Table 5-4

[0174] Table 5-5

[0175] Table 5-6

[0176] Table 5-7

[0177] Table 5-8

[0178] Table 5-9

[0179] Table 5-10

[0180] Table 5-11

[0181] Table 5-12

[0182] [Table 5-13]

[0183] [Table 5-14]

[0184] [Table 5-15]

[0185] [Table 5-16]

[0186] [Table 5-17]

[0187] [Table 5-18] Here, in each of the chemical formulas (F-1) to (F-314) * This represents the connection point to the core.

[0188] First ligand portion and second ligand portion In some non-limiting examples, a mixed ligand compound may contain multiple at least one of the first ligand moiety and the second ligand moiety.

[0189] In some non-limiting examples, the first ligand portion and the second ligand portion may each include a low surface tension portion. In some non-limiting examples, the first ligand portion and the second ligand portion may each include an F-containing portion.

[0190] In some non-limiting examples, the number of second ligand moieties in a compound may be less than or equal to the number of first ligand moieties in that compound.

[0191] In some non-limiting examples, a compound may contain multiple first ligand moieties and a single second ligand moiety.

[0192] In some non-limiting examples, at least one of the first ligand moiety and the second ligand moiety may be an F-containing moiety. In some non-limiting examples, one of the first ligand moiety and the second ligand moiety may be an F-containing moiety, while the other of the first ligand moiety and the second ligand moiety may be a substantially F-deficient moiety, including but not limited to one of H, Cl, a hydroxyl moiety, an alkyl moiety, a cycloalkyl moiety, an alkoxy moiety, an aryloxy moiety, an aryloxy moiety, an aryloxy moiety, an arylsilyl moiety, an amino moiety, an amine moiety, an alkylamine moiety, an arylamine moiety, a cyano moiety, a phosphazo moiety, a siloxane moiety, a silane moiety, and an organosilicon moiety.

[0193] In some non-limiting examples, the first ligand portion and the second ligand portion may be F-containing portions. In some non-limiting examples, the first ligand portion and the second ligand portion may each contain fluorocarbon units. In some non-limiting examples, the first ligand portion and the second ligand portion may each contain a different number of fluorocarbon units.

[0194] In some non-limiting examples, one of the first ligand portion and the second ligand portion may contain fluorocarbon units that may not be present in the other of the second ligand portion and the first ligand portion. In some non-limiting examples, the terminal portion of the first ligand portion may differ from the terminal portion of the second ligand portion. In some non-limiting examples, the terminal portion of the first ligand portion may contain CF3, and the terminal portion of the second ligand portion may contain CF2H.

[0195] In some non-limiting examples, the second ligand moiety is fluorinated sp 2 The carbon atom may be substantially absent. In some non-restrictive examples, the second ligand portion may substantially lack fluorine.

[0196] In some non-limiting examples, a mixed ligand compound may comprise a first ligand moiety containing a fluoroalkyl moiety and a second ligand moiety containing at least one of the following: a substituted alkyl moiety, an unsubstituted alkyl moiety, a substituted fluoroalkyl moiety, an unsubstituted fluoroalkyl moiety, a substituted fluoroaryl moiety, an unsubstituted fluoroaryl moiety, a substituted aryl moiety, an unsubstituted aryl moiety, a substituted polycyclic aromatic moiety, an unsubstituted polycyclic aromatic moiety, a substituted binaphthyl moiety, an unsubstituted binaphthyl moiety, a substituted biphenyl moiety, an unsubstituted biphenyl moiety, a substituted adamantyl moiety, and an unsubstituted adamantyl moiety.

[0197] In some non-limiting examples, the second ligand portion may have an F content less than or equal to the F content of the first ligand portion. In some non-limiting examples, the second ligand portion may contain a number of F atoms less than or equal to the number of F atoms in the first ligand portion. In some non-limiting examples, the second ligand portion may have a degree of fluorination less than or equal to the degree of fluorination of the first ligand portion. In some non-limiting examples, the second ligand portion may contain fluorocarbon units less than or equal to the number of fluorocarbon units in the first ligand portion. In some non-limiting examples, the second ligand portion may contain C atoms less than or equal to the number of C atoms in the first ligand portion.

[0198] In some non-limiting examples, the first ligand moiety may contain a first fluoroalkyl moiety, and the second ligand moiety may contain a second fluoroalkyl moiety. In some non-limiting examples, the first fluoroalkyl moiety may contain a different number of carbon atoms than the second fluoroalkyl moiety. In some non-limiting examples, the number of carbon atoms in the first ligand moiety and the second ligand moiety may differ by only one of 1, 2, 3, and 4. In some non-limiting examples, the number of carbon atoms in the first ligand moiety and the second ligand moiety may differ by only one of approximately 2–7, approximately 2–6, approximately 2–5, and approximately 3–5.

[0199] In some non-limiting examples, the first ligand portion and the second ligand portion may contain different numbers of fluorine atoms. In some non-limiting examples, the number of fluorine atoms in the first ligand portion and the second ligand portion may differ by only one of the following: approximately 2 or less, approximately 4 or less, approximately 6 or less, approximately 8 or less, approximately 9 or less, approximately 11 or less, approximately 13 or less, approximately 15 or less, approximately 16 or less, approximately 18 or less, approximately 20 or less, approximately 24 or less, and approximately 48 or less. In some non-limiting examples, the first ligand portion and the second ligand portion may contain the same number of fluorine atoms.

[0200] In some non-restrictive examples, the first ligand portion and the second ligand portion may contain different numbers of CF2 portions. In some non-restrictive examples, the number of CF2 portions in the first ligand portion and the second ligand portion may differ by only one of the following: approximately 1 or less, approximately 2 or less, approximately 3 or less, approximately 4 or less, approximately 5 or less, approximately 6 or less, approximately 7 or less, approximately 8 or less, approximately 9 or less, approximately 10 or less, approximately 11 or less, and approximately 22 or less. In some non-restrictive examples, the first ligand portion and the second ligand portion may contain the same number of CF2 portions.

[0201] In some non-limiting examples, the first ligand portion and the second ligand portion may contain different numbers of carbon atoms. In some non-limiting examples, the number of carbon atoms in the first ligand portion and the second ligand portion may differ by only one of the following: approximately 1 or less, approximately 2 or less, approximately 3 or less, approximately 4 or less, approximately 5 or less, approximately 6 or less, approximately 7 or less, approximately 8 or less, approximately 9 or less, approximately 10 or less, approximately 11 or less, and approximately 22 or less. In some non-limiting examples, the first ligand portion and the second ligand portion may contain the same number of carbon atoms.

[0202] In some non-limiting examples, the molar mass attributable to the first ligand portion may differ from the molar mass attributable to the second ligand portion. In some non-limiting examples, the molar masses attributable to the first ligand portion and the molar masses attributable to the second ligand portion may differ by at least one of the following: at least about 14 g / mol, at least about 30 g / mol, at least about 45 g / mol, at least about 50 g / mol, at least about 75 g / mol, at least about 100 g / mol, at least about 150 g / mol, and at least about 200 g / mol. In some non-limiting examples, the molar masses attributable to the first ligand portion and the second ligand portion may differ by only one of the following: approximately 20 g / mol or less, approximately 40 g / mol or less, approximately 50 g / mol or less, approximately 100 g / mol or less, approximately 150 g / mol or less, approximately 200 g / mol or less, approximately 300 g / mol or less, approximately 400 g / mol or less, approximately 500 g / mol or less, approximately 600 g / mol or less, approximately 700 g / mol or less, approximately 800 g / mol or less, approximately 900 g / mol or less, and approximately 1,100 g / mol or less. In some non-limiting examples, the molar mass attributable to the second ligand portion may be less than or equal to the molar mass attributable to the first ligand portion.

[0203] As used herein, the term “F content” of a ligand moiety may be understood in some non-limiting examples to generally correspond to the amount of F contained in the ligand moiety, measured by at least one of the atomic percentage, weight percentage, and volume percentage of the ligand moiety.

[0204] In some non-limiting examples, the first ligand portion and the second ligand portion may have different degrees of fluorination. In some non-limiting examples, the degree of fluorination can be measured by the F content of each ligand portion. In some non-limiting examples, the degree of fluorination can be measured by the F / C quotient, which can represent the ratio of the number of F atoms to the number of C atoms present in the ligand portion. In some non-limiting examples, the fluorination degrees of the first ligand portion and the second ligand portion may differ by only one of the following: approximately 0.03 or less, approximately 0.09 or less, approximately 0.14 or less, approximately 0.18 or less, approximately 0.22 or less, approximately 0.28 or less, approximately 0.36 or less, approximately 0.56 or less, approximately 0.71 or less, approximately 0.78 or less, approximately 0.82 or less, approximately 0.99 or less, approximately 1.56 or less, approximately 1.64 or less, approximately 1.78 or less, approximately 1.85 or less, approximately 1.98 or less, approximately 2.34 or less, approximately 3.56 or less, approximately 3.64 or less, and approximately 3.70 or less.

[0205] core part In some non-limiting examples, the core portion of a mixed ligand compound may include at least one of the following: aromatic moieties (including, but not limited to, aromatic hydrocarbon moieties, polycyclic aromatic hydrocarbon moieties, and heterocyclic aromatic moieties (including, but not limited to, those containing polycyclic structures); cyclic hydrocarbon moieties; heterocyclic moieties; linear moieties (including, but not limited to, those containing at least one of linear moieties containing at least one heteroatom and linear hydrocarbon moieties); branched moieties (including, but not limited to, those containing at least one of branched moieties containing at least one heteroatom and branched hydrocarbon moieties); crosslinked moieties (including, but not limited to, those containing at least one of crosslinked moieties containing at least one heteroatom and hydrocarbon crosslinked moieties); caged moieties; oligomeric moieties; and polymeric moieties.

[0206] In some non-limiting examples, the core portion may include a heterocyclic moiety containing at least one N atom, but not limited to a heterocyclic moiety containing at least one N atom. In some non-limiting examples, the heterocyclic moiety may include a triazole moiety. In some non-limiting examples, the core portion may include, but not limited to, a metal atom containing a transition atom and a post-transition atom. In some non-limiting examples, the metal atom may include at least one of aluminum (Al), copper (Cu), iridium (Ir), and platinum (Pt) atoms. In some non-limiting examples, the core portion may include at least one of N, O, and phosphorus (P) atoms. In some non-limiting examples, the core portion may include a cyclic hydrocarbon moiety, and in some non-limiting examples, it may be aromatic. In some non-limiting examples, the core moiety may include at least one of substituted alkyls, unsubstituted alkyls, cycloalkynyls (including, but not limited to, those containing 1 to 7 carbon atoms), alkenyls, alkynyls, aryls (including, but not limited to, one of phenyl, naphthyl, thienyl, and indolyl), arylalkyls, heterocyclic moieties (including, but not limited to, cyclic amines, one of morpholino, piperidino, and pyrrolidinone), cyclic ether moieties (including, but not limited to, one of tetrahydrofuran moieties and tetrahydropyran moieties), heteroaryls (including, but not limited to, one of pyrrole, furan, thiophene, imidazole, oxazole, thiazole, triazole, pyrazole, pyridine, pyrazine, pyrimidine, polycyclic heteroaromatic moieties, and dibenzylthiophenyl), fluorene moieties, and silyls.

[0207] In some non-restrictive examples, the core portion may contain at least one of the chemical formulas (AR-1) to (AR-31).

[0208] [Table 6-1]

[0209] [Table 6-2]

[0210] In each of equations (AR-1) to (AR-31), X independently represents C and one of the heteroatoms, which in some non-limiting examples may act as a binding site for a core portion to which a ligand portion is bound, including but not limited to a ligand portion; and Q independently represents C and one of the heteroatoms, which can act as a binding site for a core portion to an R group, including but not limited to a ligand portion, in some non-restrictive examples.

[0211] In some non-restrictive examples, X can be a heteroatom selected from one of O and N, and may include, but is not limited to, one heteroatom that is either substituted or unsubstituted.

[0212] In some non-restrictive examples, Q can be a heteroatom selected from one of N, S, O, and Si, and may include, but is not limited to, one heteroatom that is either substituted or unsubstituted.

[0213] In some non-limiting examples, the core portion may include a cyclophosphazene moiety. In some non-limiting examples, the cyclophosphazene moiety may be one of a cyclotriphosphazene moiety and a cyclotetraphosphazene moiety.

[0214] In some non-restrictive examples, a compound may contain any one of the chemical formulas (C-1) through (C-6).

[0215] [Table 7]

[0216] Chemical formulas (C-1) to (C-6) show non-limiting examples of bond configurations between the R groups and the core. In each of chemical formulas (C-1) to (C-6), each R group can independently represent a ligand moiety in each instance. In some non-limiting examples, at least one R group may represent a first ligand moiety, and at least one other R group may represent a second ligand moiety.

[0217] In some non-limiting examples, the core portion may include a silsesquioxane moiety. In some non-limiting examples, the compound may include a core portion represented by one of the following: (RSiO 1.5 )8, (RSiO 1.5 ) 10 , and (RSiO 1.5 ) 12 In some non-restrictive examples, the molecular structure of such a compound may be represented by any one of the chemical formulas (PO-1) to (PO-3).

[0218] [Table 8]

[0219] In some non-restrictive examples, the R group in the chemical formulas (PO-1) to (PO-3) is each (RSiO 1.5 The units can be independently selected when they appear. In some non-restrictive examples, the chemical formula (RSiO) contains two different R groups. 1.5 ) v The compound has the chemical formula (R 1 SiO 1.5 ) w (R 2 SiO 1.5 ) x It can also be expressed as, where the sum of w and x is v. In some non-restrictive examples, such compounds, and other compounds containing multiple different R groups, have the general chemical formula (RSiO 1.5 ) may be encompassed by v. In some non-restrictive examples, at least one R group may represent a first ligand moiety, and at least one other R group may represent a second ligand moiety.

[0220] In some non-restrictive examples, the core may include a heterocyclic part. In some non-restrictive examples, the heterocyclic part may include, but is not limited to, monocyclic structures represented by any one of the chemical formulas (MC-1) to (MC-23).

[0221] [Table 9]

[0222] In each of the above chemical formulas (MC-1) to (MC-23), R A and R B Each of these groups can independently represent a ligand moiety R, each time it appears. In some non-restrictive examples, at least one of the R groups may represent a first ligand moiety, and at least one of the other R groups may represent a second ligand moiety.

[0223] In some non-restrictive examples, the heterocyclic portion may include fused polycyclic structures that consist of multiple cyclic structures fused together such that adjacent cyclic structures may share multiple adjacent atoms.

[0224] In some non-restrictive examples, the heteroaryl moiety may include, but is not limited to, polycyclic structures represented by any one of the chemical formulas (PC-1) to (PC-27).

[0225] [Table 10-1]

[0226] [Table 10-2]

[0227] In each of the above equations, R A and R BEach of these groups can independently represent a ligand moiety R, each time it appears. In some non-restrictive examples, at least one of the R groups may represent a first ligand moiety, and at least one of the other R groups may represent a second ligand moiety.

[0228] In some non-restrictive examples, the core portion may include one of the aryl and heteroaryl moieties represented by any one of the chemical formulas (AN-1) to (AN-66).

[0229] [Table 11-1]

[0230] [Table 11-2]

[0231] [Table 11-3]

[0232] It will be understood that, when one of the aryl and heteroaryl moieties of chemical formulas (AN-1) to (AN-66) represents the core, it may be bonded to another part of the molecule, including but not limited to one of the first and second ligand moieties, at any site among the C and heteroatoms available for the formation of such a bond. In some non-limiting examples, in formulas containing an NH group, hydrogen may be replaced by a "bond" to another part of the molecule, so that an NC bond may be formed between the nitrogen atom of the heteroaryl group and the carbon atoms of another part of the molecule.

[0233] Phosphazene core portion and multiple ligand portions In some non-limiting examples, a mixed ligand compound may comprise a phosphazene moiety as a core and multiple ligand moieties bound to it. In some non-limiting examples, the core moiety may be a cyclophosphazene moiety.

[0234] In some non-restrictive examples, the molecular structure of a mixed ligand compound may be represented by one of the chemical formulas (XAA-1) to (XAA-5) and (XAB-1) to (XAB-7).

[0235] [Table 12]

[0236] In each of the above chemical formulas (XAA-1) to (XAA-5) and (XAB-1) to (XAB-7), R 1 represents the first ligand part, R 2 This represents the second ligand part.

[0237] In some non-restrictive examples, the first ligand part may be represented by the chemical formula (FCM-1).

[0238] [ka] During the ceremony, t is an integer between 1 and 3. u is an integer between 5 and 12. Z represents one of H, D, and F.

[0239] In some non-restrictive examples, the second ligand part may be represented by the chemical formula (FCM-2).

[0240] [ka] During the ceremony, v is an integer between 1 and 3. w is an integer between 3 and 15. Z represents one of H, D, and F.

[0241] In some non-restrictive cases, w can be less than or equal to u. In some non-restrictive cases, the difference between w and u can be one of 2, 3, 4, 5, and 6.

[0242] In some non-restrictive cases, t and v can have the same value. In some non-restrictive cases, both t and v can be 1.

[0243] In some non-restrictive examples, Z in chemical formula (FCM-1) and Z in chemical formula (FCM-2) may represent the same atom. In some non-restrictive examples, Z in the first ligand part and Z in the second ligand part may represent one of H and D. In some non-restrictive examples, Z in chemical formula (FCM-1) may represent one of H and D, and Z in chemical formula (FCM-2) may represent F.

[0244] In some non-restrictive examples, R 1 This is represented by the chemical formula (FCM-1), and R 2 Compounds represented by one of the chemical formulas (XAA-5) and (XAB-2), where is represented by the chemical formula (FCM-2), are summarized herein.

[0245] [Table 13]

[0246] composition containing multiple compounds In some non-limiting examples, a composition comprising multiple compounds can be provided. In some non-limiting examples, each compound of the multiple compounds may comprise a core portion and at least one ligand portion bonded to the core portion. In some non-limiting examples, at least one of the multiple compounds may be a mixed ligand compound. In some non-limiting examples, the multiple compounds may comprise at least one common ligand portion. In some non-limiting examples, the composition may comprise a mixed ligand compound comprising at least one first ligand portion and at least one second ligand portion, and a second compound comprising at least one first ligand portion of the mixed ligand compound. In some non-limiting examples, such a composition may be provided as a formulation that can be used to form thin films for various applications, including semiconductors, displays, and optical coatings. In some non-limiting examples, such a composition may be part of a layered semiconductor device 100.

[0247] In some non-limiting examples, at least one compound in the composition may contain a ligand moiety that is not present in any other compound in the composition.

[0248] In some non-limiting examples, the number of first ligand portions in the second compound may be equal to the sum of the number of first and second ligand portions in the mixed ligand compound. In some non-limiting examples, the number of second ligand portions in at least one of the mixed ligand compound and the second compound may be less than or equal to the number of first ligand portions in it. In some non-limiting examples, the ligand portion of the mixed ligand compound may be substantially composed of first and second ligand portions. In some non-limiting examples, the ligand portion of the second compound may be substantially composed of first ligand portions.

[0249] In some non-limiting examples, a mixed ligand compound may contain one second ligand portion, and the remainder of the ligand portion may be substantially composed of the first ligand portion. In some non-limiting examples, the majority of the composition may be substantially composed of the mixed ligand compound, and the remainder of the composition may be substantially composed of the second compound. In some non-limiting examples, the mixed ligand compound may constitute at least about 50%, at least about 60%, at least about 70%, at least about 75%, at least about 80%, at least about 85%, at least about 90%, at least about 95%, at least about 98%, and at least about 99% of the composition.

[0250] In some non-limiting examples, a mixed ligand compound may contain a first ligand part and a second ligand part in a ratio of approximately 1:1 in terms of the number of ligand parts constituting such a compound. In some non-limiting examples, a composition may contain an additional mixed ligand compound, which includes but is not limited to a second compound, and which contains a first ligand part and a second ligand part in a ratio of at least approximately 1:2, at least approximately 2:1, at least approximately 1:5, and at least approximately 5:1 in terms of the number of ligand parts constituting such a compound. In some non-limiting examples, the proportion of a composition that is a mixed ligand compound may be greater than or equal to the proportion of any other compound in the composition.

[0251] In some non-limiting examples, each of the compounds in the composition may contain a first ligand moiety and a second ligand moiety. In some non-limiting examples, each of the compounds may be a mixed ligand compound. In some non-limiting examples, the compounds in the composition may contain at least one first ligand moiety and at least one second ligand moiety. In some non-limiting examples, the compounds in the composition may have different ratios of the number of first ligand moieties to the number of second ligand moieties they comprise. In some non-limiting examples, the composition may contain an additional compound comprising one of the first ligand moiety and the second ligand moiety.

[0252] In some non-limiting examples, the core portions of multiple compounds may have substantially identical chemical structures. In some non-limiting examples, the core portion may be a cyclophosphazene moiety containing, but not limited to, one of a cyclotriphosphazene moiety and a cyclotetraphosphazene moiety.

[0253] In some non-limiting examples, a composition comprising multiple compounds having substantially similar chemical structures, including but not limited to compounds comprising at least one of a common core portion, a first ligand portion, and a second ligand portion, may tend to exhibit a different set of properties than the corresponding set of properties of any single compound in the composition. While we do not wish to be bound by any particular theory, it can be assumed that a composition may, in at least some scenarios, have applicability for providing a patterned coating 110. In some non-limiting examples, a patterned coating 110 comprising a composition containing a first compound having a low melting point and a low initial adhesion probability, and a second compound having a high melting point and a high initial adhesion probability, has been found to tend to exhibit a melting point greater than or equal to the melting point of the first compound, and an initial adhesion probability less than or equal to the initial adhesion probability of the second compound. In some non-limiting examples, such a composition may offer the ability to modulate at least one property of the patterned coating 110 by adjusting (including but not limited to) the individual amounts of the compounds in the composition.

[0254] In some non-limiting examples, the difference in molar mass of compounds in a composition may be one of the following: approximately 4,300 g / mol or less, approximately 4,000 g / mol or less, approximately 3,700 g / mol or less, approximately 3,500 g / mol or less, approximately 3,100 g / mol or less, approximately 2,800 g / mol or less, approximately 2,400 g / mol or less, approximately 2,200 g / mol or less, approximately 1,800 g / mol or less, approximately 1,400 g / mol or less, approximately 1,200 g / mol or less, approximately 900 g / mol or less, approximately 800 g / mol or less, approximately 700 g / mol or less, approximately 600 g / mol or less, approximately 500 g / mol or less, approximately 400 g / mol or less, approximately 300 g / mol or less, approximately 200 g / mol or less, approximately 100 g / mol or less, approximately 40 g / mol or less, and approximately 20 g / mol or less.

[0255] While we do not wish to be bound by any particular theory, it can be assumed that, in at least some scenarios, substantially small differences in the molar masses of compounds in a composition may be applicable. In some non-limiting examples, a composition containing multiple compounds with molar masses differing by only one of the following: about 1,000 or less, about 900 or less, about 800 or less, about 700 or less, about 600 or less, about 500 or less, about 400 or less, about 300 or less, and about 200 or less, may be applicable in some scenarios. In some non-limiting examples, compounds with substantially small differences in molar mass may tend to exhibit similar sublimation properties, which in some non-limiting examples may correspond to similar sublimation temperatures and partial pressures exhibited by the compounds at a given temperature. In some non-limiting examples in which the composition is sublimated to provide a patterned coating 110, compounds in the composition, including but not limited to compounds with substantially small differences in molecular weight, may facilitate the provision of a substantially homogeneous patterned coating 110 even over long deposition periods.

[0256] Those skilled in the art will understand that polydispersity is approximately analogous to the polydispersity index (PDI), which is the quotient of the weight-average molecular weight and the number-average molecular weight of a composition according to formula (1).

[0257]

number

[0258]

number

[0259] In some non-limiting examples, the polydispersity of the composition may be one of about 2.08 or less, about 2.06 or less, about 2.04 or less, about 2.02 or less, and about 2.00 or less. In some non-limiting examples, the polydispersity of the composition may be one of at least about 1.04, at least about 1.03, at least about 1.02, at least about 1.01, and 1.00.

[0260] In some non-limiting examples, the compounds in a composition may exhibit substantially the same vapor pressure.

[0261] Fluorine and silicon In some non-limiting examples, at least one of the patterning film 110 and the patterning material 411 may contain at least one of F atoms and Si atoms. In a non-limiting example, the patterning material 411 for forming the patterning film 110 may be a compound that contains at least one of F and Si.

[0262] In some non-limiting examples, the patterning material 411 may contain compounds containing F. In some non-limiting examples, the patterning material 411 may contain compounds that may contain F and C atoms. In some non-limiting examples, the patterning material 411 may contain compounds that may contain F and C in atomic ratios where the F / C quotient is at least about 1.3, at least about 1.5, at least about 1.7, and at least about 2. In some non-limiting examples, the F to C atomic ratio counts all F atoms present in the compound structure, and for C atoms, counts the sp atoms present in the compound structure. 3 This can be determined by counting only the hybridized carbon atoms. In some non-limiting examples, the patterning material 411 may contain a compound that, as part of its molecular substructure, contains portions of F and C in atomic ratios corresponding to one of the following F / C quotients: about 2.0 or less, about 2.5 or less, about 3.0 or less, about 3.5 or less, about 4.0 or less, about 4.5 or less, about 5.0 or less, about 5.5 or less, about 6.0 or less, about 6.5 or less, and about 7.0 or less.

[0263] Initial attachment probability In some non-limiting examples, the initial adhesion probability of the patterning material 411 can be determined by depositing the material as a film and coating it under conditions similar to those for depositing the patterning coating 110 in device 100, such that the film has a thickness sufficient to mitigate any influence on the degree of intermolecular interactions with the substrate when deposited on the surface of the substrate. In some non-limiting examples, the initial adhesion probability can be measured on a film / coating having a thickness of at least about 20 nm, at least about 25 nm, at least about 30 nm, at least about 50 nm, at least about 60 nm, and at least about 100 nm.

[0264] In some non-limiting examples, at least one of the patterning film 110 and the patterning material 411 may have an initial adhesion probability for the deposition of the deposition material 531, which is one of about 0.3 or less, about 0.2 or less, about 0.15 or less, about 0.1 or less, about 0.08 or less, about 0.05 or less, about 0.03 or less, about 0.02 or less, about 0.01 or less, about 0.008 or less, about 0.005 or less, about 0.003 or less, about 0.001 or less, about 0.0008 or less, about 0.0005 or less, about 0.0003 or less, and about 0.0001 or less, when deposited in some non-limiting examples as at least one of the forms of film and coating and under similar conditions to the deposition of the patterning film 110 in the device 100.

[0265] In some non-limiting examples, one of the patterning film 110 and the patterning material 411 may, in some non-limiting examples, have an initial adhesion probability to the deposition of at least one of Ag and Mg, which is one of about 0.3 or less, about 0.2 or less, about 0.15 or less, about 0.1 or less, about 0.08 or less, about 0.05 or less, about 0.03 or less, about 0.02 or less, about 0.01 or less, about 0.008 or less, about 0.005 or less, about 0.003 or less, about 0.001 or less, about 0.0008 or less, about 0.0005 or less, about 0.0003 or less, and about 0.0001 or less, as at least one of the forms of film and coating, and when deposited under similar conditions to the deposition of the patterning film 110 in the device 100.

[0266] In some non-limiting examples, one of the patterning film 110 and the patterning material 411, in some non-limiting examples, as at least one of the forms of film and coating, and deposited under similar conditions to the deposition of the patterning film 110 in device 100, is approximately 0.15-0.0001, approximately 0.1-0.0003, approximately 0.08-0.0005, approximately 0. 0.08~0.0008, approximately 0.05~0.001, approximately 0.03~0.0001, approximately 0.03~0.0003, approximately 0.03~0.0005, approximately 0.03~0.0008, approximately 0.03~0.001, approximately 0.03~0.005, approximately 0.03~0.008, approximately 0.03~0.01, approximately 0.02~0.0001, approximately 0.02~0.0003, approximately 0.02~0.0005, approximately 0.0 2~0.0008, approximately 0.02~0.001, approximately 0.02~0.005, approximately 0.02~0.008, approximately 0.02~0.01, approximately 0.01~0.0001, approximately 0.01~0.0003, approximately 0.01~0.0005, approximately 0.01~0.0008, approximately 0.01~0.001, approximately 0.01~0.005, approximately 0.01~0.008, approximately 0.008~0.0001, approximately 0.008 It may have an initial adhesion probability for the deposition of one of the following deposit material 531: ~0.0003, approximately 0.008~0.0005, approximately 0.008~0.0008, approximately 0.008~0.001, approximately 0.008~0.005, approximately 0.005~0.0001, approximately 0.005~0.0003, approximately 0.005~0.0005, approximately 0.005~0.0008, and approximately 0.005~0.001.

[0267] In some non-limiting examples, at least one of the patterning film 110 and the patterning material 411 may have an initial adhesion probability for the deposition of a plurality of deposition materials 531, which, in some non-limiting examples, is below a threshold when deposited as at least one of the forms of film and coating, and is selected from at least one of silver (Ag), magnesium (Mg), ytterbium (Yb), cadmium (Cd), and zinc (Zn), among others, as at least one of these. In some non-limiting examples, such thresholds could be one of approximately 0.3, 0.2, 0.18, 0.15, 0.13, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0268] In some non-limiting examples, at least one of the patterning film 110 and the patterning material 411, when deposited in the form of at least one of film and coating, and under conditions similar to the deposition of the patterning film 110 in the device 100, may have an initial adhesion probability below such a threshold for the deposition of a plurality of deposition materials 531 selected from at least one of Ag, Mg, Yb, Cd, and Zn. In some non-limiting examples, the patterning film 110 may exhibit an initial adhesion probability below such a threshold for the deposition of a plurality of deposition materials 531 selected from at least one of Ag, Mg, and Yb.

[0269] In some non-limiting examples, at least one of the patterning film 110 and the patterning material 411, when deposited in the form of at least one of a film and a coating, under conditions similar to the deposition of the patterning film 110 in the device 100, may exhibit an initial adhesion probability for the deposition of a first deposition material 531, including but not limited to a first threshold, and an initial adhesion probability for the deposition of a second deposition material 531, including but not limited to a second threshold. In some non-limiting examples, the first deposition material 531 may be Ag, and the second deposition material 531 may be Mg. In some non-limiting examples, the first deposition material 531 may be Ag, and the second deposition material may be Yb. In some non-limiting examples, the first deposition material 531 may be Yb, and the second deposition material 531 may be Mg. In some non-limiting examples, the first threshold may exceed the second threshold.

[0270] In some non-limiting examples, there may be scenarios where, when the patterning coating 110 is subjected to the vapor flux 532 of the deposit material 531, it is necessary to provide a patterning coating 110 that causes the formation of a discontinuous layer 160 of at least one particulate structure 150. In some non-limiting examples, the patterning coating 110 may exhibit a substantially low initial adhesion probability such that a sealing coating 140 of the deposit material 531 may be formed on a second portion 102 where the patterning coating 110 is substantially absent, while a discontinuous layer 160 of at least one particulate structure 150 having at least one characteristic may be formed on a first portion 101 of the patterning coating 110. In some non-limiting examples, there may be scenarios in which, while depositing a sealing film 140 of deposited material 531 having a thickness of, for example, one of the following: about 100 nm or less, about 50 nm or less, about 25 nm or less, and about 15 nm or less, the second portion 102 requires the formation of a discontinuous layer 160 of at least one particle structure 150 of deposited material 531, which may be one of the following: metal and metal alloy. In some non-limiting examples, the amount of deposited material 531 deposited as a discontinuous layer 160 of at least one particle structure 150 in the first portion 101 may correspond to one of the following: about 1-50%, about 2-25%, about 5-20%, and about 7-10% of the amount of deposited material 531 deposited as a sealing film 140 in the second portion 102, which may correspond to a thickness of, for example, one of the following: about 100 nm or less, about 75 nm or less, about 50 nm or less, about 25 nm or less, and about 15 nm or less.

[0271] In some non-limiting examples, there may be a positive correlation between the initial adhesion probability of at least one of the patterning film 110 and the deposition of the deposited material 531 and the average layer thickness of the deposited material 531 on it, in some non-limiting examples, as at least one of the forms of film and coating, and deposited under similar conditions to the deposition of the patterning film 110 in the device 100.

[0272] Transmittance In some non-limiting examples, at least one of the patterning coating 110 and the patterning material 411, in some non-limiting examples, as at least one of the forms of film and coating, and deposited under conditions similar to the deposition of the patterning coating 110 in the device 100, may have a transmittance to light of at least a threshold transmittance value after being exposed to a vapor flux 532 of a depositing material 531 containing but not limited to Ag.

[0273] In some non-limiting examples, such transmittance can be measured after exposure of at least one exposed layer surface 11 of a patterning film 110 and patterning material 411, which are formed as thin films under typical conditions and can be used to deposit electrodes for an optoelectronic device 200, which may be the cathode of an organic light-emitting diode (OLED) device 200, to a vapor flux 532 of a deposition material 531 which includes at least one of metals and alloys including but not limited to Yb, Ag, Mg, and Ag-containing substances (including but not limited to MgAg).

[0274] In some non-limiting examples, the conditions for subjecting the exposed layer surface 11 to a vapor flux 532 of a deposited material 531 containing at least one metal and alloy containing at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg) may include: (i) a vacuum pressure of about 10 -4 Torr and about 10 -5(ii) Maintaining a reference pressure including but not limited to one of Torr, (ii) The vapor flux 532 of the deposited material 531 including but not limited to at least one of metals and alloys including but not limited to at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg) is substantially consistent with a reference deposition rate including but not limited to about 1 angstrom (Å) / second, which can be monitored using QCM in some non-limiting examples, (iii) The vapor flux 532 of the deposited material 531 is directed toward the exposed layer surface 11 at an angle substantially close to perpendicular to the plane of the exposed layer surface 11, (iv) (v) The exposed layer surface 11 is subjected to a vapor flux 532 of a deposited material 531 containing at least one metal and alloy containing at least one of Yb, Ag, Mg, and Ag-containing substances (including but not limited to MgAg) until it reaches a reference average layer thickness of about 15 nm, and (v) once such reference average layer thickness is reached, the exposed layer surface 11 is not subjected to further vapor flux of the deposited material 531 containing at least one metal and alloy containing at least one of Yb, Ag, Mg, and Ag-containing substances (including but not limited to MgAg).

[0275] In some non-limiting examples, the exposed layer surface 11 of a deposited material 531 containing, but not limited to, at least one of Yb, Ag, Mg, and Ag-containing materials (including, but not limited to, MgAg), which is subjected to a vapor flux 532, may be substantially at room temperature (e.g., about 25°C). In some non-limiting examples, the exposed layer surface 11 of a deposited material 531 containing, but not limited to, at least one of metals and alloys containing, but not limited to, at least one of Yb, Ag, Mg, and Ag-containing materials (including, but not limited to, MgAg), which is subjected to a vapor flux 532, may be located about 65 cm away from the evaporation source from which the deposited material 531 containing, but not limited to, at least one of metals and alloys containing, but not limited to, at least one of Yb, Ag, Mg, and Ag-containing materials (including, but not limited to, MgAg), evaporates.

[0276] In some non-limiting examples, the threshold transmittance value may be measured at a wavelength in the visible spectrum, which may be at least about 450 nm, at least about 500 nm, at least about 550 nm, and at least about 600 nm. In some non-limiting examples, the threshold transmittance value may be measured at at least one wavelength in the IR and NIR spectra. In some non-limiting examples, the threshold transmittance value may be measured at a wavelength of about 700 nm, about 900 nm, and about 1000 nm. In some non-limiting examples, the threshold transmittance value can be expressed as the percentage of incident EM power that can penetrate the sample. In some non-limiting examples, the threshold transmittance value may be at least about 60%, at least about 65%, at least about 70%, at least about 75%, at least about 80%, at least about 85%, and at least about 90%.

[0277] Those skilled in the art will understand that high transmittance generally indicates the absence of a sealing film 140 of the deposited material 531 containing, but not limited to, at least one of Yb, Ag, Mg, and Ag-containing substances (including, but not limited to, MgAg). On the other hand, since a thin metal film can exhibit a high degree of light absorption, especially when formed as a sealing film 140, low transmittance generally indicates the presence of a sealing film 140 of the deposited material 531 containing, but not limited to, at least one of Yb, Ag, Mg, and Ag-containing substances (including, but not limited to, MgAg).

[0278] A series of samples were prepared to measure the transmittance of exemplary materials and to visually observe whether a sealing film 140 of the deposited material 531 was formed on the exposed layer surface 11 of such exemplary materials.

[0279] The molecular structures of the exemplary materials used in the samples described herein are shown in Table 1 below.

[0280] [Table 14-1]

[0281] [Table 14-2]

[0282] [Table 14-3]

[0283] [Table 14-4]

[0284] [Table 14-5]

[0285] [Table 14-6]

[0286] [Table 14-7]

[0287] [Table 14-8]

[0288] Those skilled in the art will understand that a sample with little to no deposited material 531, which includes at least one of the metals and alloys, which includes but are not limited to at least one of the Yb, Ag, Mg, and Ag-containing substances (including but not limited to MgAg), may be substantially transparent, while a sample with a substantial amount of at least one of the metals and alloys, which includes but are not limited to a sealing film 140, deposited thereon may exhibit substantially reduced transmittance in some non-limiting examples. Thus, the performance of various exemplary coatings as patterning films 110 can be evaluated by measuring the transmittance through a sample, and this transmittance may be inversely correlated with at least one of the amount and average thickness of the deposited material 531, which includes at least one of the metals and alloys, which includes but are not limited to at least one of the Yb, Ag, Mg, and Ag-containing substances (including but not limited to MgAg), deposited thereon, as a thin metal film, including but not limited to when formed as a sealing film 140, may exhibit high light absorption.

[0289] Specifically, the following experiments were conducted to compare the performance of patterned coatings 110 containing various exemplary materials.

[0290] Experiment 1 A series of samples were prepared by depositing layers of various nucleation-modifying materials, each approximately 30 nm thick, onto a glass substrate in a vacuum. The nucleation-modifying material varied between samples. For each sample, the exposed layer surface 11 of the resulting nucleation-modifying film was then subjected to open-mask deposition of Ag-containing deposition material 531 at a rate of approximately 1 Å / s until a reference thickness of approximately 15 nm was achieved. Once the samples were prepared, EM transmittance measurements were performed to determine the relative amount of deposition material deposited on the exposed layer surface 11 of the patterned film 110. Those skilled in the art will understand that samples with little to no metal present may be substantially transparent, while samples with metal deposited on them, especially as a sealed film, may generally exhibit substantially lower light transmittance.

[0291] Table 2 below shows the transmittance measured at wavelengths of 450 nm, 520 nm, and 850 nm after exposure of each sample to Ag vapor flux 532.

[0292] [Table 15]

[0293] As can be seen from the results in Table 2, it was found here that in some non-limiting examples, nucleation-modified materials including a core portion, a first ligand portion, and a second ligand portion may exhibit different EM transmittance characteristics. In some non-limiting examples, nucleation-modified materials including a core portion, a first ligand portion, and a second ligand portion (including but not limited to EM-19 and EM-64 to EM-74) may exhibit EM transmittance characteristics at one of at least about 450 nm, at least about 520 nm, and at least about 850 nm, which is the EM transmittance characteristic of nucleation-modified materials substantially lacking at least one of the core portion, the first ligand portion, and the second ligand portion (including but not limited to EM-13).

[0294] Experiment 2 A series of samples were prepared by depositing layers of various nucleation-modifying materials, each approximately 30 nm thick, onto a glass substrate in a vacuum. The nucleation-modifying material varied between samples. Next, for each sample, the exposed layer surface 11 of the nucleation-modifying film formed thereon was subjected to open-mask deposition of a Yb-containing deposition material 531. First, Yb:LiF (1:1 (volume ratio)) was deposited until a reference thickness of approximately 1.5 nm was reached, and then MgAg (Mg:Ag=1:9 (volume ratio)) was deposited until a reference thickness of approximately 15 nm was reached. After the samples were prepared, EM transmittance was measured to determine the relative amount of deposition material deposited on the exposed layer surface 11 of the patterned film 110.

[0295] Table 3 below shows the transmittance measured at wavelengths of 450 nm, 520 nm, and 850 nm after each sample was exposed to vapor flux 532 of Yb:LiF and MgAg.

[0296] [Table 16]

[0297] Table 4 summarizes the decrease in EM transmittance at wavelengths of 450, 520, and 850 nm after each sample was exposed to vapor flux 532 of Yb:LiF (1:1 volume ratio) and MgAg (1:9 volume ratio). The decrease in EM transmittance was determined by measuring the EM transmittance through each sample and comparing it to a reference sample that was not exposed to vapor flux 532 of Yb:LiF and MgAg.

[0298] [Table 17]

[0299] As can be seen from the results in Tables 3 and 4, it was found here that in some non-limiting examples, nucleation-modified materials including a core portion, a first ligand portion, and a second ligand portion may exhibit different EM transmittance characteristics. In some non-limiting examples, nucleation-modified materials including a core portion, a first ligand portion, and a second ligand portion (including but not limited to EM-18, EM-75 to EM-79, and EM-81 to EM-83) may exhibit EM transmittance characteristics at one of at least about 450 nm, at least about 520 nm, and at least about 850 nm, which are the EM transmittance characteristics of nucleation-modified materials substantially lacking at least one of the core portion, the first ligand portion, and the second ligand portion (including but not limited to EM-4, EM-11, and EM-12).

[0300] Example of synthesis Synthesis of EM-18, EM-70, EM-71, EM-72, EM-75, EM-77, and EM-78 Each of these compounds was synthesized from sample EM-11 using a three-step process involving the formation of two reaction intermediates: IM-11-OH and IM-11-Cl, as outlined in the following diagram.

[0301] [ka]

[0302] I. Synthesis of EM-11 from hexachlorocyclotriphosphazene In a 2.0 L round-bottom flask equipped with a stirring rod, 12.8 g of NaOH was placed in 20 mL of deionized (DI) water and suspended in 500 mL of toluene. 145.1 g of 1H,1H,9H-hexadecafluoro-1-nonanol was added, and the suspension was heated at 95 °C for a total of 4 hours under a continuous flow of nitrogen gas (N2). A solid precipitate formed during this time.

[0303] The temperature was adjusted to 85°C, and a water condenser was attached to the flask under a N2 atmosphere. 13.92 g of hexachlorocyclotriphosphazene, dissolved in 100 mL of dry tetrahydrofuran (THF) under N2 conditions, was added to the reaction mixture via a cannula. The reaction mixture was stirred at 85°C for 2 hours, and then at room temperature for 48 hours.

[0304] The reaction was quenched by adding 200 mL of water, and the mixture was filtered by vacuum filtration in a filtration funnel (pore size: approximately 10-20 μm). The recovered solid was washed with water (3 × 1 L), isopropyl alcohol (1 L), and dichloromethane (DCM, 1 L). 95.2 g of a white solid was collected and identified as sample EM-11. Sample EM-11 was further purified by vacuum sublimation.

[0305] II. Formation of IM-11-OH 50 g of EM-11 was dissolved in 250 mL of acetone in a 1.0 L round-bottom flask equipped with a stirring rod and a water condenser. Then, 25 mL of DI water was added to the flask to obtain a clear solution. The reaction mixture was heated to 80 °C, and then NaOH was added. After stirring the reaction mixture for 48 hours, 300 mL of water was added to the reaction mixture. Acetone was removed from the mixture using a rotary evaporator. The mixture was then acidified with concentrated hydrochloric acid and stirred for 2 hours. A brown solid was obtained by vacuum suction filtration of this mixture using a medium-grade filter. The solid was washed with acetone / DCM (1:1, 3 × 100 mL / 100 mL) and then dried to obtain IM-11-OH.

[0306] II. IM-11-Cl formation 26 g of IM-11-OH suspended in 200 mL of toluene was placed in a 1.0 L round-bottom flask equipped with a stirring rod and a water condenser. 10 mL of SOCl2 was added, and 50 μL of N,N-dimethylformamide (DMF) was slowly added to the round-bottom flask. The suspension was then heated to 110 °C and stirred for 18 hours. The product obtained by evaporating the solvent was IM-11-Cl.

[0307] III. Formation of the final product A dry 250 mL round-bottom flask equipped with a stirring rod, argon balloon, and septum was filled with the solvent and R2-OH using a syringe. The reaction flask was cooled to 0°C in an ice bath, and the base was added to the flask. The mixture was stirred overnight, or until gas generation ceased. Then, while maintaining the reaction temperature at 0°C, the material IM-11-Cl was added to the mixture. The reactants were stirred overnight, or until the reaction was complete.

[0308] Next, the solvent was removed by rotary evaporation to concentrate the solution and form a suspension. The resulting suspension in the mixture was then filtered. The solid recovered from the filtration was optionally washed with water, MeOH, DCM, and isopropanol to obtain the final compound.

[0309] Table 5 summarizes the reactants and solvents involved in step III.

[0310] [Table 18]

[0311] Synthesis of EM-19 1H,1H,11H-perfluoroundecane-1-ol (40 mmol, 21.28 g) and 1H,1H,9H-hexadecafluoro-1-nonanol (40 mmol, 17.28 g) were placed in a 1.0 L round-bottom flask equipped with a stirring bar. 500 mL of dry THF was then added to form a mixture, which was purged under argon. NaH (1.8 g, 75 mmol) was then added to the reaction mixture at room temperature, and the reaction mixture was stirred for 3 hours.

[0312] Octochlorocyclotriphosphazene (8.9 mmol, 4.1 g) was added to the reactants at room temperature, and the reactants were stirred for approximately 36 hours. The mixture was filtered, and the solvent was evaporated using a rotary evaporator. The remaining solid was dissolved in acetone (approximately 20 mL), and water (approximately 500 mL) was added to the solution to precipitate the solid. The mixture was filtered directly to obtain the solid, which was then washed with water (2 × 300 mL), isopropyl alcohol (1 × 300 mL), and DCM (2 × 300 mL). The dried solid was then sublimated under vacuum to obtain the product.

[0313] Sedimentary contrast In some non-limiting examples, a material including a patterning material 411, which can function as a NIC for a given at least one of metals and alloys, including at least one of Mg, Ag, and MgAg, may have substantially high deposition contrast when deposited on a substrate 10.

[0314] In some non-limiting examples, if the substrate 10 tends to function as a nucleation-promoting coating (NPC) 720 (Figure 7A), and a portion thereof is coated with a patterning material 411 which may tend to function as a NIC for the deposition of a deposition material 531 which may contain at least one of metals and alloys containing at least one of Yb, Ag, Mg, and Ag-containing substances (including but not limited to MgAg), then the coated portion (first portion 101) and the uncoated portion (second portion 102) may tend to have at least one of different initial adhesion probabilities and nucleation rates, such that the deposition material 531 deposited thereon may tend to have different average film thicknesses.

[0315] As used herein, in such a scenario, the quotient obtained by dividing the average thickness of the deposited material 531 deposited in the second portion 102 by the average thickness of the deposited material in the first portion 101 can generally be referred to as the deposition contrast. Therefore, if the deposition contrast is substantially high, the average thickness of the deposited material 531 in the second portion 102 may be substantially equal to or greater than the average thickness of the deposited material 531 in the first portion 101.

[0316] In some non-limiting examples, materials including, but not limited to, a patterning material 411 that can function as a NIC for a given deposition material 531 may have substantially high deposition contrast when deposited on the substrate 10.

[0317] In some non-limiting examples, there may be a negative correlation between the initial adhesion probability of at least one of the patterning film 110 and the patterning material 411, and, in some non-limiting examples, the deposition of the deposited material 531 and its deposition contrast, when deposited as at least one of the forms of film and coating, and under similar conditions to the deposition of the patterning film 110 in device 100; in other words, a low initial adhesion probability may be highly correlated with a high deposition contrast.

[0318] In some non-limiting examples, when the deposition contrast is substantially high, there may be little to no deposition of deposition material 531 in the first portion 101 when there is sufficient deposition of deposition material 531 in the second portion 102 to form a sealing film 140 of the deposition material 531.

[0319] In some non-limiting examples, when the deposition contrast is substantially low, there may be discontinuous layers 160 of at least one particle structure 150 of the deposited material 531 deposited in the first portion 101, when there is sufficient deposition of the deposited material 531 in the second portion 102 to form a sealing film 140.

[0320] In some non-limiting examples, there may be scenarios in which the formation of a discontinuous layer 160 of at least one particle structure 150 of the deposited material 531 is required in the first portion 101, including but not limited to the formation of such nanoparticles (NPs) in the first portion 101, where the average thickness of the sealing film 140 of the deposited material 531 in the second portion 102 is substantially small, and the light absorption by nanoparticles is required to protect the underlying layer 710 from light having wavelengths of about 460 nm or less (but not limited to this purpose), and the wavelength of such NPs is about 100 nm or less, about 50 nm or less, about 25 nm or less, and about 15 nm or less.

[0321] In some non-limiting examples, such scenarios may be applicable to one of the following sedimentary contrasts: approximately 2–100, approximately 4–50, approximately 5–20, and approximately 10–15.

[0322] In some non-limiting examples, materials including, but not limited to, patterning material 411 having a substantially low deposition contrast with respect to the deposition of the deposited material 531 may have reduced applicability in some scenarios requiring a substantially high deposition contrast, such as when the average layer thickness of the deposited material 531 in the first portion 101 is large and includes, but not limited to, one of at least about 95 nm, at least about 45 nm, at least about 20 nm, at least about 10 nm, and at least about 8 nm.

[0323] In some non-limiting examples, materials including, but not limited to, patterning material 411 having substantially low deposition contrast with respect to the deposition of deposited material 531 may have reduced applicability in some scenarios requiring substantially high deposition contrast, including, but not limited to, scenarios requiring increased transparency to light having a wavelength of at least approximately 460 nm, and some scenarios requiring substantially absent absorption of light in at least one of the visible spectrum and NIR spectrum, including, but not limited to, scenarios requiring increased transparency to light having a wavelength of at least approximately 460 nm.

[0324] In some non-limiting examples, materials including, but not limited to, patterning materials 411 having a substantially low deposition contrast with respect to the deposition of the deposited material 531 may be applicable in some scenarios where the average layer thickness of the sealing film 140 of the deposited material 531 in the second part 102 is substantially high, and includes, but is not limited to, one of at least about 95 nm, at least about 45 nm, at least about 20 nm, at least about 10 nm, and about 8 nm, and requires at least one of discontinuous layers 160 and low density of the particle structure 150 of the deposited material 531 in the first part 101. In some non-limiting examples, deposition contrasts of about 2-100, about 4-50, about 5-20, and about 10-15 may be applicable in some scenarios where the average layer thickness of the deposited material 531 in the second part 102 is substantially high, and includes, but is not limited to, one of at least about 95 nm, at least about 45 nm, at least about 20 nm, at least about 10 nm, and at least about 8 nm.

[0325] In some non-limiting examples, materials including but not limited to patterning material 411 may tend to have substantially low deposition contrast if the initial adhesion probability of such material to at least one of metals and alloys including but not limited to Mg, Ag, and MgAg is substantially high.

[0326] Surface energy When used herein, characteristic surface energy may, in some non-limiting examples, generally refer to the surface energy determined from a material, particularly with respect to a material.

[0327] In some non-limiting examples, characteristic surface energies can be measured from surfaces formed by materials deposited (coated) in thin film form.

[0328] Various methods and theories are known for determining the surface energy of solids.

[0329] In some non-limiting examples, surface energy can be calculated (derived) based on a series of measurements of the contact angles at which various liquids can come into contact with a solid surface, in order to determine the contact angle between the liquid-vapor interface and the surface. In some non-limiting examples, the surface energy of a solid surface may be equal to the surface tension of the liquid having the highest surface tension to completely wet the surface.

[0330] In some non-restrictive cases, the critical surface tension of a surface can be determined according to the Zisman method, as further detailed in WAZisman, Advances in Chemistry 43 (1964), pp. 1-51.

[0331] In some non-limiting examples, the characteristic surface energy of a material including but not limited to a patterning film 411 in a film including but not limited to a patterning film 110 can be determined by depositing the material as a substantially pure film (e.g., a film formed from a substantially pure material) on a substrate 10 and measuring its contact angle with a set of applicable probe liquids.

[0332] In some non-restrictive examples, a Zisman plot can be used to determine the surface tension value that results in complete wetting with the surface (i.e., a contact angle θc of 0°).

[0333] In some non-limiting examples, materials applicable to applications forming patterned coatings 110 may generally have low surface energy when deposited as a thin film (coating) on ​​a surface. In some non-limiting examples, materials with low surface energy may exhibit low intermolecular forces.

[0334] While we do not wish to be bound by any particular theory, it is assumed here that materials with substantially high surface energies may be applicable in some applications requiring at least high-temperature reliability.

[0335] While we do not wish to be bound by any particular theory, it has been found that a patterning film 110 containing a material that exhibits substantially high surface energy when deposited as a thin film may, in some non-limiting examples, form a discontinuous layer 160 of at least one particle structure 150 of the deposited material 531 in the first portion 101 and a sealing film 140 of the deposited material 531 in the second portion 102, when the thickness of the sealing film is, in some non-limiting examples, one of approximately 100 nm or less, approximately 75 nm, approximately 50 nm or less, approximately 25 nm or less, and approximately 15 nm or less.

[0336] As some non-limiting examples, a series of samples were prepared to measure the critical surface tension of surfaces formed from various materials. The measurement results are summarized in Table 6.

[0337] [Table 19]

[0338] Based on the above-described measurements of critical surface tension in Table 6 and previous observations regarding the presence or absence of a substantially sealed coating 140 on the Ag-formed deposited material 531, it was found that materials that form substantially low surface energy surfaces when deposited as a coating including but not limited to a patterning coating 110 may, as some non-limiting examples, be materials having a critical surface tension of about 12–23 dynes / cm and may be applicable to forming a patterning coating 110 and inhibiting the deposition of deposited material 531 containing, but not limited to, at least one of Yb, Ag, Mg, and Ag-containing substances (including but not limited to MgAg) on ​​it.

[0339] While we do not wish to be bound by any particular theory, we may assume that in some non-limiting examples, materials forming surfaces with a surface energy of approximately 13 dynes / cm or less may exhibit at least one of the following: substantially weak adhesion to surrounding layers, a low melting point, and a low sublimation temperature, and therefore may have poor applicability as patterning material 411 in some scenarios.

[0340] In some non-limiting examples, materials including but not limited to patterning materials 411 that may tend to function as NICs for deposition materials 531, which include but not limited to at least one of metals and alloys containing at least one of Mg, Ag, and Ag-containing materials (including but not limited to MgAg), may tend to exhibit substantially low surface energy when deposited as a thin film (coating) on ​​the exposed layer surface 11.

[0341] In some non-limiting examples, materials including but not limited to patterning material 411 may tend to exhibit substantially low surface energy when deposited as a thin film (coating) on ​​the exposed layer surface 11.

[0342] In some non-limiting examples, materials including, but not limited to, patterning materials 411 having substantially low surface energies may tend to exhibit substantially low intermolecular forces.

[0343] In some non-limiting examples, there may be scenarios requiring a patterning material 411 having a substantially low surface energy that is not excessively low.

[0344] In some non-limiting examples, materials including, but not limited to, patterning materials 411 having substantially high surface energies may be applicable in some scenarios for detecting films of such materials using optical techniques.

[0345] While we do not wish to be bound by any particular theory, it can be assumed that, in some non-limiting examples, materials including but not limited to patterning material 411 with substantially high surface energy may be applicable to some scenarios requiring substantially high temperature reliability.

[0346] In some non-limiting examples, a material including but not limited to a patterning material 411 that can function as a NIC for at least one of metals and alloys containing at least one of Mg, Ag, and Ag-containing materials (including but not limited to MgAg), having substantially high surface energy, may be applicable in some scenarios requiring a discontinuous layer 160 of at least one part of the metal and alloy in the first part 101, where the average layer thickness of the continuous coating 140 of at least one of the metals and alloys in the second part 102 is substantially low, being one of about 100 nm or less, about 50 nm or less, about 25 nm or less, and about 15 nm or less (but not limited to these).

[0347] In some non-limiting examples, a patterning material 411 that can function as a NIC for a deposited material 531 having a substantially low surface energy, including but not limited to a patterning material 411 that includes at least one of metals and alloys (including but not limited to MgAg) that include at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg), may be applicable in some scenarios requiring a discontinuous layer 160 and low density of the particle structure 150 of the deposited material 531 in the first part 101, where the average layer thickness of the sealing film 140 of the deposited material 531 in the second part 102 is substantially high, and is at least about 95 nm, at least about 45 nm, at least about 20 nm, at least about 10 nm, and at least about 8 nm (but not limited to these).

[0348] In some non-limiting examples, when at least one surface of the patterning coating 110 and the patterning material 411 is deposited under similar conditions to the deposition of the patterning coating 110 in a device 100 containing the compound described herein, in some non-limiting examples, as at least one of the forms of film and coating, it may exhibit one of the following surface energies: about 24 dynes / cm or less, about 22 dynes / cm or less, about 20 dynes / cm or less, about 18 dynes / cm or less, about 16 dynes / cm or less, about 15 dynes / cm or less, about 13 dynes / cm or less, about 12 dynes / cm or less, and about 11 dynes / cm or less.

[0349] In some non-limiting examples, the surface values ​​in the various non-limiting examples herein may correspond to such values ​​measured near normal temperature and pressure (NTP), which may correspond to a temperature of 20°C and an absolute pressure of 1 atm.

[0350] In some non-limiting examples, the surface energy may be one of at least about 6 dynes / cm, at least about 7 dynes / cm, and at least about 8 dynes / cm.

[0351] In some non-limiting examples, the surface energy can be one of approximately 10–20 dynes / cm and approximately 13–19 dynes / cm.

[0352] temperature glass transition temperature In some non-limiting examples, at least one of the patterning film 110 and the patterning material 411, in some non-limiting examples, as at least one of the forms of film and coating, and when deposited under conditions similar to the deposition of the patterning film 110 in the device 100, may have a glass transition temperature of at least about 300°C, at least about 200°C, at least about 170°C, at least about 150°C, at least about 130°C, at least about 120°C, at least about 110°C, and at least about 100°C, and one of about 20°C or less, about 0°C or less, about -20°C or less, about -30°C or less, and about -50°C or less.

[0353] sublimation temperature In some non-limiting examples, materials including, but not limited to, patterning material 411 with substantially low intermolecular forces may tend to exhibit substantially low sublimation temperatures.

[0354] In some non-limiting examples, materials including, but not limited to, patterning materials 411 having substantially low sublimation temperatures may have reduced applicability to manufacturing processes that require substantially precise control of the average thickness of the sealing film 140 of the deposited film of the material.

[0355] In some non-limiting examples, patterning materials 411 having sublimation temperatures of approximately 140°C or less, approximately 120°C or less, approximately 110°C or less, approximately 100°C or less, and approximately 90°C or less may tend to encounter constraints on at least one of the deposition rate and average thickness of films containing such materials that can be deposited using known deposition methods, including but not limited to vacuum thermal deposition.

[0356] In some non-limiting examples, materials including, but not limited to, patterning materials 411 having substantially high sublimation temperatures may be applicable in some scenarios where substantially high precision is required in controlling the average layer thickness of films containing such materials.

[0357] In some non-limiting examples, the patterning material may have a sublimation temperature of one of the following: approximately 100–320°C, approximately 120–300°C, approximately 140–280°C, and approximately 150–250°C. In some non-limiting examples, such a sublimation temperature may allow the patterning material 411 to be deposited substantially easily as a coating using PVD.

[0358] In some non-limiting examples, materials with substantially low intermolecular forces may exhibit substantially low sublimation temperatures.

[0359] In some non-limiting examples, materials including, but not limited to, patterning materials 411 having substantially low sublimation temperatures may have reduced applicability to manufacturing processes that require substantially precise control of the average layer thickness of the sealing film 140 of the material.

[0360] In some non-limiting examples, patterning materials 411 having sublimation temperatures of approximately 140°C or less, approximately 120°C or less, approximately 110°C or less, approximately 100°C or less, and approximately 90°C or less may tend to encounter constraints on at least one of the deposition rate and average thickness of films containing such materials that can be deposited using known deposition methods, including but not limited to vacuum thermal deposition.

[0361] In some non-limiting examples, materials including, but not limited to, patterning materials 411 having substantially high sublimation temperatures may be applicable in some scenarios where substantially high precision is required in controlling the average layer thickness of films containing such materials.

[0362] The sublimation temperature of the patterning material 411, including but not limited to it, can be determined using various methods apparent to those skilled in the art, such as, in some non-limiting examples, about 10 -4 Heating a material in a Torr evaporation source under substantially high vacuum, including but not limited to a crucible, and, • Observe the beginning of material deposition on the exposed layer surface 11 on the QCM, which is attached at a certain distance from the crucible. • Observe a specific deposition rate on the exposed layer surface 11 on the QCM attached at a certain distance from the crucible, which in some non-limiting examples is 0.1 Å / sec, and • In some non-specific examples, about 10 -4 and about 10 -5 This includes, but is not limited to, determining the temperature that can be achieved to do at least one of the following: reaching the threshold vapor pressure of one of the Torr materials.

[0363] In some non-limiting cases, the QCM can be mounted approximately 65 cm away from the crucible for the purpose of determining the sublimation temperature.

[0364] In some non-limiting examples, the patterning material 411 may have a sublimation temperature of approximately 100-320°C, approximately 100-300°C, approximately 120-300°C, approximately 100-250°C, approximately 140-280°C, approximately 120-230°C, approximately 130-220°C, approximately 140-210°C, approximately 140-200°C, approximately 150-250°C, and approximately 140-190°C.

[0365] melting point In some non-limiting examples, materials including, but not limited to, patterning material 411 with substantially low intermolecular forces may tend to exhibit substantially low melting points.

[0366] In some non-limiting examples, patterning materials 411 having substantially low melting points may have reduced applicability in some scenarios requiring sufficient temperature reliability to one of the following temperatures: below approximately 60°C, below approximately 80°C, and below approximately 100°C, due to changes in the physical properties of such materials at operating temperatures approaching their melting point.

[0367] In some non-limiting examples, materials with a melting point of approximately 120°C may have reduced applicability in certain scenarios requiring substantially high temperature reliability, including but not limited to at least approximately 100°C.

[0368] In some non-limiting examples, materials including, but not limited to, patterning material 411 having a substantially high melting point may be applicable in some scenarios requiring substantially high temperature reliability.

[0369] In some non-limiting examples, at least one of the patterned film 110 and its compounds may have a melting temperature at atmospheric pressure that is one of at least about 90°C, at least about 100°C, at least about 120°C, at least about 140°C, at least about 160°C, at least about 180°C, and at least about 200°C. [Examples]

[0370] As some non-limiting examples, the melting points of the materials in the selected examples were measured using differential scanning calorimetry. Specifically, the melting point for each sample was determined during a second heating cycle at a heating rate of 10°C / min. The measurement results are summarized in Table 7.

[0371] [Table 20]

[0372] Energy of cohesion According to Young's equation (Equation 14), the cohesive energy (fracture toughness / cohesive strength) of a material may tend to be proportional to its surface energy (see Young, Thomas (1805) "An essay on the cohesion of fluids," Philosophical Transactions of the Royal Society of London, 95:65-87).

[0373] According to Lindemann's criteria, the cohesive energy of a material may tend to be proportional to its melting temperature (see Nanda, KK, Sahu, SN, and Behera, SN (2002) "Liquid-drop model for the size-dependent melting of low-dimensional systems" Phys. Rev. A. 66(1): 013208).

[0374] In some non-limiting examples, materials including, but not limited to, patterning material 411 with substantially low intermolecular forces may tend to exhibit substantially low cohesive energy.

[0375] In some non-limiting examples, patterning materials 411 having substantially low cohesive energy may have shown reduced applicability in some scenarios requiring sufficient fracture toughness in devices 100 that may be prone to being subjected to at least one of shear stress and bending stress during at least one of manufacturing and use, and therefore, in such scenarios, the material may be prone to cracking (fracture). In some non-limiting examples, patterning materials 411 having cohesive energy of about 30 dynes / cm or less may have shown reduced applicability in some scenarios in devices 100 manufactured on a flexible substrate 10.

[0376] In some non-limiting examples, materials including but not limited to patterning materials 411 having substantially high cohesive energy may be applicable in some scenarios requiring substantially high reliability under at least one of shear stress and bending stress, including but not limited to devices 100 fabricated on a flexible substrate 10.

[0377] In some non-limiting examples, materials including but not limited to patterning materials 411 having substantially low but not excessively low surface energies may be applicable in some scenarios requiring sufficient reliability under at least one of shear stress and bending stress, including but not limited to devices 100 fabricated on a flexible substrate 10.

[0378] Examples As some non-limiting examples, a series of samples were prepared to determine the point of failure during delamination or interlayer delamination. Specifically, each sample was prepared by depositing a layer of approximately 50 nm thick of each exemplary material, functioning as a patterning film 110, followed by a layer of approximately 50 nm thick of an organic material commonly used as a capping layer (CPL) on a glass substrate 10. Adhesive tape was then applied to the exposed layer surface 11 of the CPL of each sample. The adhesive tape was peeled off to induce interlayer delamination (cohesive failure) in each sample, and the peeled adhesive tape and the delaminated sample were analyzed to determine which layer (including, but not limited to, the interface with its adjacent layer) had failed the delamination test. Samples in which failure occurred within the patterning film 110 (including, but not limited to, the interface between the patterning film 110 and the adjacent layer) were identified as failing the delamination test, while samples in which failure occurred within the CPL (i.e., cohesive failure within the CPL) were identified as passing the delamination test. Table 8 summarizes the results of this analysis.

[0379] [Table 21]

[0380] Based on the above analysis of the delamination test and previous observations regarding the melting point and critical surface tension of the exemplary materials, it was found that samples prepared using a patterning coating 110 containing EM-8 as the patterning material 411 (indicating that both the melting point and critical surface tension were greater than or equal to the values ​​of both EM-10 and EM-11) showed fracture occurring within the CPL, in that the CPL separated and a new surface was formed. On the other hand, samples prepared using a patterning coating 110 containing EM-10 and EM-11 as the patterning material 411 showed fracture occurring within the patterning coating 110, in that the patterning coating 110 separated and a new surface was formed.

[0381] While we do not wish to be bound by any particular theory, it can be assumed that, when the patterning material 411 contains EM-8, this is due to the cohesive energy of the CPL being less than or equal to both the cohesive energy of the patterning film 110 and the adhesion energy at the interface between the patterning film 110 and the CPL. Conversely, each patterning film 110 formed by the patterning material 411 containing one of EM-4, EM-10, EM-11, EM-12, EM-13, and EM-14 exhibits a cohesive energy less than or equal to both the cohesive energy of the CPL and the adhesion energy at the interface between the patterning film 110 and the CPL for such a sample, resulting in delamination due to cohesive failure occurring within the patterning film 110 of both samples.

[0382] Optical gap / band gap In this disclosure, semiconductor materials can generally be described as materials exhibiting a band gap. In some non-limiting examples, the band gap may be formed between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the semiconductor material. Thus, semiconductor materials may tend to exhibit conductivity that is substantially less than or equal to that of conductive materials (including, but not limited to, at least one of metals and alloys) but substantially at least equivalent to that of insulating materials (including, but not limited to, glass). In some non-limiting examples, semiconductor materials may include organic semiconductor materials. In some non-limiting examples, semiconductor materials may include inorganic semiconductor materials.

[0383] In some non-limiting examples, the optical gaps of materials, including but not limited to patterned material 411, may tend to correspond to the HOMO-LUMO gaps of the material.

[0384] In some non-limiting examples, patterning materials 411 having substantially large / broad optics (HOMO-LUMO gap) may tend to exhibit substantially weak photoluminescence (including but not limited to cases where they exhibit substantially no photoluminescence) in at least one of the deep B (blue) region of the visible spectrum, the near-UV spectrum, the visible spectrum, and the NIR spectrum.

[0385] In some non-limiting examples, materials with substantially small HOMO-LUMO gaps may be applicable in scenarios where optical techniques are used to detect the film of the material.

[0386] In some non-limiting examples, the optical gap of the patterning material 411 can be wider than the photon energy of the light emitted by the source, such that the patterning material 411 does not undergo photoexcitation when exposed to such light.

[0387] Refractive index and extinction coefficient In some non-limiting examples, one of the patterning film 110 and the patterning material 411 may have a low refractive index, in some non-limiting examples, as at least one of the forms of a film and a coating, and when deposited under similar circumstances for the deposition of the patterning film 110 within the device 100.

[0388] In some non-limiting examples, at least one of the patterning coating 110 and the patterning material 411 may, in some non-limiting examples, have a refractive index for light at a wavelength of 550 nm, which may be one of about 1.55 or less, about 1.5 or less, about 1.45 or less, about 1.43 or less, about 1.4 or less, about 1.39 or less, about 1.37 or less, about 1.35 or less, about 1.32 or less, and about 1.3 or less, as at least one of the form of film and coating, and when deposited under conditions similar to the deposition of the patterning coating 110 in the device 100.

[0389] In some non-limiting examples, the refractive index of the patterned coating 110 may be about 1.7 or less. In some non-limiting examples, the refractive index of the patterned coating 110 may be one of about 1.6 or less, about 1.5 or less, about 1.4 or less, and about 1.3 or less. In some non-limiting examples, the refractive index of the patterned coating 110 may be at least one of about 1.2 to 1.6, about 1.2 to 1.5, and about 1.25 to 1.45. As further explained in the various non-limiting examples above, a patterned coating 110 exhibiting a substantially low refractive index may have applications that enhance at least one of the optical properties and performance of the device 100 in some scenarios, for example, by enhancing the outcoupling of light emitted by the optoelectronic device 200.

[0390] While we do not wish to be bound by any particular theory, it has been observed that providing a patterned coating 110 with a substantially low refractive index can increase the transmittance of external light through its second portion 102 in at least some devices 100. In some non-limiting examples, a device 100 containing an air gap, which may be placed near the patterned coating 110, may exhibit substantially higher transmittance compared to a similarly configured device 100 in which such a low refractive index patterned coating 110 is not provided, when the patterned coating 110 has a substantially low refractive index.

[0391] In some non-limiting examples, a series of samples were prepared to measure the refractive index at a wavelength of 550 nm of coatings formed from some of the various exemplary materials. The measurement results are summarized in Table 9 below.

[0392] [Table 22]

[0393] Based on the aforementioned measurements of refractive indices in Table 9 and observations regarding the presence or absence of a substantial sealing film 140 of Ag in these samples, it was found that materials forming low refractive index films may, in some non-limiting examples, be materials having a refractive index of one of about 1.4 or less and about 1.38 or less, and may be applicable in some scenarios where a patterning film 110 is formed and substantially inhibits the deposition of a deposit material 531 thereon, which includes, but is not limited to, at least one of metals and alloys containing, but not limited to, Yb, Ag, Mg, and Ag-containing substances (including, but not limited to, MgAg).

[0394] In some non-limiting examples, one of the patterning film 110 and the patterning material 411 may have a low refractive index, in some non-limiting examples, as at least one of the forms of a film and a coating, and when deposited under similar circumstances for the deposition of the patterning film 110 within the device 100.

[0395] In some non-limiting examples, at least one of the patterning coating 110 and the patterning material 411 may, in some non-limiting examples, have a refractive index for light at a wavelength of 550 nm, which may be one of about 1.55 or less, about 1.5 or less, about 1.45 or less, about 1.43 or less, about 1.4 or less, about 1.39 or less, about 1.37 or less, about 1.35 or less, about 1.32 or less, and about 1.3 or less, as at least one of the form of film and coating, and when deposited under conditions similar to the deposition of the patterning coating 110 in the device 100.

[0396] In some non-limiting examples, the patterned coating 110 may be substantially transparent and light-transmitting, or at least one of the latter.

[0397] In some non-limiting examples, at least one of the patterning coating 110 and the patterning material 411, when deposited in some non-limiting examples as at least one of the forms of film and coating, and under conditions similar to the deposition of the patterning coating 110 in the device 100, may have an absorption coefficient that may be less than or equal to about 0.01 for light at a wavelength that is at least about 600 nm, at least about 500 nm, at least about 460 nm, at least about 420 nm, and at least about 410 nm.

[0398] In some non-limiting examples, at least one of the patterning coating 110 and the patterning material 411, when deposited in some non-limiting examples as at least one of the forms of film and coating, and under similar circumstances to the deposition of the patterning coating 110 in the device 100, may have an extinction coefficient for EM radiation at a wavelength of at least about 0.05, at least about 0.1, at least about 0.2, and at least about 0.5 with respect to one of the wavelengths of about 400 nm or less, about 390 nm or less, about 380 nm or less, and about 370 nm or less.

[0399] In this way, at least one of the patterning film 110 and the patterning material 411, when deposited as at least one of the forms of a film and a coating, and under conditions similar to the deposition of the patterning film 110 within the device 100, absorbs light in the UVA spectrum incident on the device 100, thereby reducing the possibility that light in the UVA spectrum may impose limitations on at least one of the following: device performance, device stability, device reliability, and device lifetime.

[0400] In some non-limiting examples, the patterned coating 110 may exhibit an absorption coefficient of one or less among approximately 0.1 or less, approximately 0.08 or less, approximately 0.05 or less, approximately 0.03 or less, and approximately 0.01 or less in the visible light spectrum.

[0401] Photoluminescence, absorption, and other optical effects In some non-limiting examples, the photoluminescence of at least one of the coatings and materials may be observed through a photoexcitation process. In the photoexcitation process, at least one of the coatings and materials may be exposed to light emitted from a source including, but not limited to, a UV lamp.

[0402] When emitted light is absorbed by at least one of the coating and material, its electrons may be transiently excited. Following the excitation, at least one relaxation process may occur, including but not limited to at least one of fluorescence and phosphorescence, where light may be emitted from at least one of the coating and material.

[0403] Light emitted from at least one of the coating and material during such a process can be detected, for example, by a photodetector to characterize the photoluminescence properties of at least one of the coating and material.

[0404] As used herein, the wavelength of photoluminescence relating to at least one of coatings and materials may generally refer to the wavelength of light emitted by at least one of such coatings and materials as a result of the relaxation of electrons from an excited state. As will be understood by those skilled in the art, the wavelength of light emitted by at least one of the coatings and materials as a result of a photoexcitation process may, in some non-limiting examples, be longer than the wavelength of the radiation used to initiate the photoexcitation. Photoluminescence may be detected using a variety of techniques known in the art, including but not limited to fluorescence microscopy.

[0405] In some non-limiting examples, the optical gaps of various coatings / materials may correspond to the energy gaps of the coatings / materials where either light absorption or emission occurs during the photoexcitation process.

[0406] In some non-limiting examples, photoluminescence can be detected by exposing one of a coating and a material to light having a wavelength corresponding to the UV spectrum, such as one of UVA and UVB. In some non-limiting examples, the light to induce photoexcitation may have a wavelength of approximately 365 nm.

[0407] In some non-limiting examples, the patterning material 411 does not have to substantially exhibit photoluminescence at any wavelength corresponding to the visible spectrum.

[0408] In some non-limiting examples, the patterning material 411 does not have to exhibit photoluminescence when exposed to light having one of the wavelengths at least about 300 nm, at least about 320 nm, at least about 350 nm, and at least about 365 nm.

[0409] As used herein, at least one of the photoluminescent coatings and materials may exhibit photoluminescence at a certain wavelength when irradiated with excitation radiation of a specific wavelength. In some non-limiting examples, at least one of the photoluminescent coatings and materials may exhibit photoluminescence at wavelengths beyond approximately 365 nm, which is the wavelength of radiation sources frequently used in fluorescence microscopy, when irradiated with excitation radiation having a wavelength of 365 nm.

[0410] At least one of the photoluminescent coatings and materials can be detected on the substrate 10 using standard optical techniques, including but not limited to fluorescence microscopy, thereby confirming the presence of at least one of the coatings and materials.

[0411] In some non-limiting examples, a coating including but not limited to a patterned coating 110 may exhibit photoluminescence by including but not limited to a material that exhibits photoluminescence.

[0412] In some non-limiting cases, the presence of such patterning film 110 can be detected (observed) using routine characterization techniques such as fluorescence microscopy during the deposition of the patterning film 110.

[0413] In some non-exclusive examples, coatings include, but are not limited to, a patterning coating 110. Photoluminescence can be exhibited at wavelengths corresponding to at least one of the UV spectrum and the visible spectrum by a method that includes, but is not limited to, a material exhibiting photoluminescence. In some non-limiting examples, photoluminescence may occur at wavelengths (ranges) corresponding to the UV spectrum, including, but not limited to, one of the UVA spectrum and the UVB spectrum. In some non-limiting examples, photoluminescence may occur at wavelengths (ranges) corresponding to the visible spectrum. In some non-limiting examples, photoluminescence may occur at wavelengths (ranges) corresponding to one of the deep blue and near-UV spectrum.

[0414] In some non-limiting examples, at least one of the materials of the patterning film 110 that can exhibit photoluminescence may include at least one of a conjugated bond, an aryl moiety, a donor-acceptor group, and a heavy metal complex.

[0415] In some non-limiting examples, a patterning coating 110 including, but not limited to, a patterning material 411 having substantially weak photoluminescence (absorption) or substantially no photoluminescence (absorption) in at least one wavelength range of at least about 365 nm and at least about 460 nm, may tend not to function as either a photoluminescent coating or an absorbing coating, and may be applicable in some scenarios requiring substantially high transparency in at least one of the visible spectrum and the NIR spectrum.

[0416] In some non-limiting cases, such materials may tend to exhibit substantially low photoluminescence when exposed to light having a wavelength of approximately 365 nm, which is the wavelength of radiation sources used in fluorescence microscopy. The presence of such materials, including but not limited to patterning material 411, may reduce applicability in some scenarios requiring typical optical detection techniques, including but not limited to fluorescence microscopy, particularly when deposited as thin films in some non-limiting cases. This may impose constraints in some scenarios where the material is selectively deposited on a portion of the substrate 10, for example, through FMM, because there may be several scenarios that determine the portion where such material is present following the deposition of the material.

[0417] In some non-limiting examples, materials that have substantially low absorption or substantially no absorption at wavelengths of at least about 365 nm and at least about 460 nm may be applicable in some scenarios where substantially high transparency in at least one of the visible spectrum and NIR spectrum is required.

[0418] In some non-limiting examples, at least one of the patterning coating 110 and the patterning material 411, when deposited in some non-limiting examples as at least one of the forms of a film and a coating, and under conditions similar to the deposition of the patterning coating 110 in the device 100, may not substantially attenuate light passing through it, at least in the visible spectrum.

[0419] In some non-limiting examples, at least one of the patterning coating 110 and the patterning material 411, when deposited as at least one of the forms of a film and a coating, and under conditions similar to the deposition of the patterning coating 110 in the device 100, may not substantially attenuate light passing through it in at least one of the IR spectrum and NIR spectrum.

[0420] In this way, at least one of the patterning film 110 and the patterning material 411, when deposited as at least one of the forms of a film and a coating, and under conditions similar to the deposition of the patterning film 110 within the device 100, absorbs light in the UVA spectrum incident on the device 100, thereby reducing the possibility that light in the UVA spectrum may impose limitations on at least one of the following: device performance, device stability, device reliability, and device lifetime.

[0421] In some non-limiting examples, the patterned coating 110 can function as an optical coating.

[0422] In some non-limiting examples, the patterned coating 110 can modify one or more properties of the light (including but not limited to the form of photons) emitted by the device 100, and at least one of the one or more properties. In some non-limiting examples, the patterned coating 110 can exhibit a degree of haze and scatter the emitted light. In some non-limiting examples, the patterned coating 110 may contain crystalline material to scatter the light that has passed through it. Such scattering of light may facilitate the enhancement of outcoupling of light from the device 100 in some non-limiting examples. In some non-limiting examples, the patterned coating 110 may first be deposited as a substantially amorphous coating, including but not limited to substantially amorphous material, and thereafter, after its deposition, the patterned coating 110 may crystallize and subsequently serve as an optical coupler.

[0423] In some non-limiting examples, the patterning material 411 may exhibit slight absorption (including, but not limited to, no detectable absorption) when exposed to light having one of the wavelengths at least about 300 nm, at least 320 nm, at least 350 nm, and at least 365 nm.

[0424] In some non-limiting examples, the patterned coating 110 may not exhibit any substantial light absorption at any wavelength corresponding to the visible light spectrum.

[0425] average layer thickness In some non-limiting examples, the average layer thickness of the patterned coating 110 may be one of the following: approximately 10 nm or less, approximately 8 nm or less, approximately 7 nm or less, approximately 6 nm or less, and approximately 5 nm or less.

[0426] weight While we do not wish to be bound by any particular theory, we can assume that for compounds adapted to form surfaces with substantially low surface energy, there may be scenarios, at least in some applications, where the molar mass of such compounds needs to be one of the following: approximately 800–3,000 g / mol, approximately 900–2,000 g / mol, approximately 900–1,800 g / mol, and approximately 900–1,600 g / mol.

[0427] In some non-limiting examples, the molar mass of at least one compound of patterning material 411 may be less than or equal to about 6,000 g / mol. In some non-limiting examples, the molar mass of the compound may be one of the following: less than or equal to about 6,000 g / mol, less than or equal to about 5,500 g / mol, less than or equal to about 5,000 g / mol, less than or equal to about 4,500 g / mol, less than or equal to about 4,300 g / mol, or less than or equal to about 4,000 g / mol.

[0428] In some non-limiting examples, the molar mass of the compound may be one of at least about 500, at least about 550, at least about 580, at least about 650, at least about 750, at least about 1,000, at least about 1,200, at least about 1,300, at least about 1,500, at least about 1,700, at least about 2,000, at least about 2,200, and at least about 2,500 g / mol.

[0429] In some non-limiting examples, the molar mass of a compound can be one of the following: approximately 800–4,000 g / mol, approximately 900–2,000 g / mol, approximately 900–1,800 g / mol, and approximately 900–1,600 g / mol.

[0430] In some non-limiting examples, the proportion of the molar weight of such a compound that may be due to the presence of the fluorine atom may be one of approximately 40–90%, 45–85%, 50–80%, 55–75%, and 60–75%. In some non-limiting examples, the fluorine atom may constitute the majority of the molar weight of such a compound.

[0431] Interrelationships between patterning coating attributes While we do not wish to be bound by any particular theory, it can be assumed that an exposed layer surface 11 exhibiting a low initial adhesion probability for a deposited material 531 containing at least one of metals and alloys containing but not limited to Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg) may exhibit high transmittance.

[0432] In some non-limiting examples, materials including but not limited to patterning material 411 may have a substantially high initial adhesion probability for deposition of depositing material, provided the material has a substantially high surface energy, and includes but not limited to metals and alloys including at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg).

[0433] In some non-limiting cases, a patterned coating 110 having substantially low surface energy and substantially high melting point may be applicable in some scenarios requiring high temperature reliability. Considering that in some non-limiting cases a single material with low surface energy may tend to exhibit a low melting point, in some non-limiting cases, there may be challenges in achieving such a combination from a single material.

[0434] In some non-limiting examples, patterning materials 411 having substantially low surface tensions, but not excessively low, may be applicable in some scenarios requiring substantially high melting points, including but not limited to about 15–22 dynes / cm.

[0435] In some non-limiting examples, materials including, but not limited to, patterning materials 411 having substantially low but not excessively low surface tension may be applicable in some scenarios requiring substantially high sublimation temperatures.

[0436] In some non-limiting examples, a patterning coating 110 containing a patterning material 411 having substantially low surface energy and substantially high sublimation temperature may have applications in some scenarios where substantially high precision is required in controlling the average layer thickness of a film containing such material.

[0437] While not bound by any particular theory, in some non-limiting examples, it can be hypothesized that a material forming an exposed layer surface 11 having a surface energy of approximately 13 dynes / cm or less, approximately 14 dynes / cm or less, and approximately 15 dynes / cm or less may have reduced applicability as a patterning material 411 in some scenarios because such a material exhibits at least one of substantially low adhesion to the surrounding layer, substantially low melting point, and substantially low sublimation temperature.

[0438] While not bound by any particular theory, in some non-limiting examples, it can be assumed that a material forming an exposed layer surface 11 having a surface energy of approximately 13 dynes / cm or less, approximately 15 dynes / cm or less, and approximately 17 dynes / cm or less may have reduced applicability as a patterning material 411 in some scenarios because such a material exhibits at least one of substantially weak cohesive strength, substantially low melting point, and substantially low sublimation temperature.

[0439] While we do not wish to be bound by any particular theory, we can assume that such compounds, comprising but not limited to at least one patterning film 411, may exhibit at least one property that may be applicable in some scenarios for forming at least one of films and layered fields having at least one of the following: (i) a substantially high melting point of at least 100°C in some non-limiting examples, (ii) a substantially low surface energy, and (iii) a substantially amorphous structure when deposited using a vacuum-based thermal deposition process in some non-limiting examples.

[0440] In some non-limiting examples, patterned coatings 110 having substantially low surface energy, substantially high cohesive energy, and substantially high melting point may be applicable in some scenarios requiring substantially high reliability under various conditions. In some non-limiting examples, considering that a single material with substantially low surface energy may tend to exhibit substantially low cohesive energy and substantially low melting point, there may be challenges in achieving such a combination from a single material in some non-limiting examples.

[0441] In some non-limiting examples, patterning materials 411 having substantially low surface energy and substantially high cohesive energy may be applicable in some scenarios requiring substantially high reliability under at least one of shear stress and bending stress. In some non-limiting examples, considering that a thin film substantially formed from a single material having substantially low surface energy may tend to exhibit substantially low cohesive energy, there may be challenges in achieving such a combination from a single material in some non-limiting examples.

[0442] In some non-limiting examples, materials including but not limited to patterning material 411 having substantially low surface energy may tend to exhibit at least one optical gap that is substantially large and substantially wide.

[0443] Generally, materials with low surface energy may, as an unrestricted example, exhibit at least one of a large optical gap and a wide optical gap, which may correspond to the HOMO-LUMO gap of the material.

[0444] Here, it was also found that a patterned coating 110 formed by a compound exhibiting substantially low surface energy can also exhibit substantially low refractive index.

[0445] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 may exhibit a surface energy of about 25 dynes / cm or less and a refractive index of about 1.45 or less. In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 711 may include a material exhibiting a surface energy of about 20 dynes / cm or less and a refractive index of about 1.4 or less.

[0446] In some non-limiting examples, materials including, but not limited to, patterning materials 411 having substantially low surface energy may be applicable in some scenarios where substantially weak photoluminescence and substantially weak absorption are required or not required in a wavelength range of at least about 365 nm and at least about 460 nm.

[0447] In some non-limiting examples, patterning materials 411 having at least one of substantially large optical gaps (and HOMO-LUMO gaps) and substantially wide optical gaps (and HOMO-LUMO gaps) may exhibit substantially weak photoluminescence or substantially no photoluminescence in at least one of the deep B (blue) region of the visible spectrum, the near-UV spectrum, the visible spectrum, and the NIR spectrum.

[0448] While not bound by any particular theory, it has been observed that compounds with substantially low surface energies and molar masses of about 1,000 g / mol or less may exhibit low sublimation temperatures, including but not limited to those below about 100°C, and substantially low melting points, including but not limited to those below about 100°C and at least one of those below about 80°C. As a result, such compounds may have reduced applicability in certain scenarios.

[0449] While we do not wish to be bound by any particular theory, we can assume that in some limited examples, for compounds adapted to form surfaces with substantially low surface energy, there may be scenarios where the molar mass of such compounds needs to be one of the following: approximately 500–6,000 g / mol, approximately 550–5,500 g / mol, approximately 580–4,500 g / mol, approximately 580–4,000 g / mol, approximately 650–3,800 g / mol, approximately 750–3,500 g / mol, and approximately 1,000–3,000 g / mol.

[0450] At least some materials having at least one of a large and wide optical gap, and at least one of a HOMO-LUMO gap, may exhibit substantially weak photoluminescence or substantially no photoluminescence in at least one of the visible spectrum, its deep B (blue) region, and near-UV spectrum. In some non-limiting examples, materials with substantially small HOMO-LUMO gaps may be applicable to applications where optical techniques are used to detect the film of the material. In some non-limiting examples, materials with higher surface energies may be applicable to applications where optical techniques are used to detect the film of the material.

[0451] In some non-limiting examples, materials with substantially large HOMO-LUMO gaps may be applicable in certain scenarios where at least one of weak photoluminescence and weak absorption is required or not required in at least one wavelength range of at least about 365 nm and at least about 460 nm.

[0452] doping In some non-limiting examples, the patterning coating 110 may have at least one nucleation site for the deposited material 531, for reasons including, but not limited to, at least one of the patterning material 411 used and the deposition environment.

[0453] In some non-limiting examples, the patterning film 110 may be doped in a manner that includes, but is not limited to, coating and complementation with another material that can function as at least one of seed and heterogeneity, so as to function as such nucleating sites for the deposited material 531. In some non-limiting examples, such other material may include NPC720 material. In some non-limiting examples, such other material may include, in some non-limiting examples, organic material (polycyclic aromatic compounds and materials containing at least one of nonmetallic elements, including but not limited to at least one of O, S, N, and C), whose presence may otherwise become a contaminant in at least one of the source material, the equipment used for deposition, and the vacuum chamber environment. In some non-limiting examples, such other material may be deposited in a layer thickness that is a small portion of a single layer in order to avoid forming its sealing film 140. Rather, monomers of such other material may tend to be separated to the sides so as to form separate nucleating sites for the deposited material.

[0454] Multiple materials forming a patterned coating In some non-limiting examples, forming a patterned coating 110 of a single patterned material 411 onto a deposited material 531 containing at least one of a given metal and a given alloy containing at least one of Yb, Ag, Mg, and Ag-containing substances (including but not limited to MgAg), satisfying constraints of at least one material property selected from at least one of the following: initial adhesion probability, transmittance, deposition contrast, surface energy, glass transition temperature, melting point, sublimation temperature, evaporation temperature, cohesive energy, optical gap, photoluminescence, refractive index, extinction coefficient, absorption, other optical effects, average layer thickness, molar mass, and composition, can be challenging for a given scenario, given the substantially complex interrelationships between various material properties.

[0455] In some non-limiting examples, the patterning coating 110 may comprise multiple materials. In some non-limiting examples, the patterning coating 110 may comprise a first material and a second material. In some non-limiting examples, the patterning coating 110 may comprise additional materials, including but not limited to at least one of a third material and a fourth material.

[0456] In some non-limiting examples, at least one of the multiple materials of the patterning film 110 may serve as a NIC when deposited as a thin film.

[0457] In some non-limiting examples, at least one of the multiple patterning materials 411 may serve as a NIC when deposited as a thin film. In some non-limiting examples, at least one of the patterning materials 411 may not function as a NIC. In some non-limiting examples, at least one of the patterning materials 411 that does not function as a NIC may form an NPC 720 when deposited as a thin film. In some non-limiting examples, the presence of a first material in the patterning film 110 may result in an increased initial adhesion probability compared to the case where the patterning film 110 is formed from a second material and substantially lacks the first material.

[0458] In some non-limiting examples, at least one of the first and second materials may include molecules having at least one of a cage structure, a cyclic structure, and an organic-inorganic hybrid structure.

[0459] In some non-limiting examples, the host may contain fully condensed oligomers. In some non-limiting examples, the molecular structure of the host may substantially lack any partially condensed parts, including but not limited to uncondensed parts.

[0460] In some non-limiting examples, the first material may form NPC720 when deposited as a thin film, and the second material may form NIC when deposited as a thin film.

[0461] In some non-limiting examples, employing multiple patterning materials 411, each satisfying a different combination of constraints for at least one material property, may be applicable in several scenarios to achieve a desired combination of properties of the patterning coating 110 (including, but not limited to, at least one of the following): • High patterning contrast, • Low tendency to crystallize into thin film form. • Low risk of cohesive failure and / or delamination in thin film form. • A patterned coating 110 that exhibits a photoluminescence response, and - Formation of at least one particle structure 150 on the exposed layer surface 11 of the patterned coating 110.

[0462] In some non-limiting examples, at least one of the materials of the patterning film 110 may be adapted to form a surface having a lower surface energy when deposited as a thin film. In some non-limiting examples, the first material may be adapted to form a surface having a lower surface energy when deposited as a thin film than the surface provided by the thin film containing the second material.

[0463] In some non-limiting examples, the patterned coating 110 may exhibit photoluminescence in a manner that includes, but is not limited to, including, the inclusion of a material that exhibits photoluminescence.

[0464] In some non-limiting examples, the first material may exhibit photoluminescence at wavelengths corresponding to the visible spectrum, while the second material may not exhibit substantial photoluminescence at any wavelength corresponding to the visible spectrum.

[0465] In some non-limiting examples, the second material may not substantially exhibit photoluminescence at any wavelength corresponding to the visible spectrum. In some non-limiting examples, the second material may not exhibit photoluminescence when exposed to light having one wavelength among at least about 300 nm, at least about 320 nm, at least about 350 nm, and at least about 365 nm. In some non-limiting examples, the second material may exhibit slight absorption or no detectable absorption when exposed to such light.

[0466] In some non-limiting examples, the second optical gap of the second material may be wider than the photon energy of the light emitted by the source, such that the second material does not undergo photoexcitation when exposed to such light. However, in some non-limiting examples, the patterning film 110 containing such second material may nevertheless exhibit photoluminescence when exposed to light, in order for the first material to exhibit photoluminescence. In some non-limiting examples, the presence of the patterning film 110 may be detected using common characterization techniques such as fluorescence microscopy at the time of deposition of the patterning film 110.

[0467] In some non-limiting examples, the first material may have a first optical gap, and the second material may have a second optical gap. In some non-limiting examples, the second optical gap may be larger than the first optical gap. In some non-limiting examples, the difference between the first optical gap and the second optical gap may exceed one of about 0.3 eV, about 0.5 eV, about 0.7 eV, about 1 eV, about 1.3 eV, about 1.5 eV, about 1.7 eV, about 2 eV, about 2.5 eV, and about 3 eV.

[0468] In some non-limiting cases, the first optical gap may be one of approximately 4.1 eV or less, approximately 3.5 eV or less, and approximately 3.4 eV or less. In some non-limiting cases, the second optical gap may exceed one of approximately 3.4 eV, approximately 3.5 eV, approximately 4.1 eV, approximately 5 eV, and approximately 6.2 eV.

[0469] In some non-restrictive examples, at least one of the first optical gap and the second optical gap may correspond to the HOMO-LUMO gap.

[0470] In some non-limiting examples, at least one optical gap among a variety of coatings and materials, including but not limited to at least one of a first optical gap and a second optical gap, may correspond to at least one energy gap among the coatings and materials, where at least one of light absorption and / or emission occurs during the photoexcitation process.

[0471] In some non-limiting examples, the concentration of the first material in the patterning film 110 may be less than or equal to the concentration of the second material in the patterning film 110, but without limitation. In some non-limiting examples, the patterning film 110 may contain at least about 0.1% by weight, at least about 0.2% by weight, at least about 0.5% by weight, at least about 0.8% by weight, at least about 1% by weight, at least about 3% by weight, at least about 5% by weight, at least about 8% by weight, at least about 10% by weight, at least about 15% by weight, and at least about 20% by weight of the first material. In some non-limiting examples, the patterning coating 110 may comprise one of the following first materials in amounts of about 50% by weight or less, about 40% by weight or less, about 30% by weight or less, about 25% by weight or less, about 20% by weight or less, about 15% by weight or less, about 10% by weight or less, about 8% by weight or less, about 5% by weight or less, about 3% by weight or less, and about 1% by weight or less. In some non-limiting examples, the remainder of the patterning coating 110 may be substantially composed of a second material.

[0472] In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may include a plurality of at least one of the first ligand portion and the second ligand portion.

[0473] In some non-limiting examples, at least one of the materials of the patterning film 110, which includes but is not limited to at least one of the first material and the second material, may include a plurality of at least one of the first ligand moieties and the second ligand moieties. In some non-limiting examples, a plurality of at least one of the first ligand moieties and the second ligand moieties may be bonded to the core moiety. In some non-limiting examples, the core moiety may include nitrogen. In some non-limiting examples, the core moiety may include a phosphazene group. In some non-limiting examples, the core moiety may be a cyclophosphazene.

[0474] In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to the first material and the second material, may be represented by the chemical formula (CPH-1).

[0475] [ka] During the ceremony, R independently represents one of the first ligand portion and the second ligand portion; and n is an integer between 2 and 4.

[0476] In some non-limiting examples, at least one of the materials of the patterning film 110, which includes but is not limited to the first material, may contain the first ligand portion and the second ligand portion in a ratio of approximately 1:1 in terms of the number of ligand portions in such material.

[0477] In some non-limiting examples, at least one of the materials of the patterning film 110, which includes but is not limited to a second material, may contain the first ligand portion and the second ligand portion in a ratio of at least about 1:2, at least about 2:1, at least about 1:5, and at least about 5:1, in terms of the number of ligand portions composed in such material.

[0478] In some non-limiting examples, at least one of a plurality of materials of a patterning coating, including but not limited to a first material and a second material, may include a first ligand moiety comprising a fluoroalkyl moiety and a second ligand moiety comprising at least one of a substituted alkyl moiety, an unsubstituted alkyl moiety, a substituted fluoroalkyl moiety, an unsubstituted fluoroalkyl moiety, a substituted fluoroaryl moiety, an unsubstituted fluoroaryl moiety, a substituted aryl moiety, an unsubstituted aryl moiety, a substituted polycyclic aromatic moiety, an unsubstituted polycyclic aromatic moiety, a substituted binaphthyl moiety, an unsubstituted binaphthyl moiety, a substituted biphenyl moiety, an unsubstituted biphenyl moiety, a substituted adamantyl moiety, and an unsubstituted adamantyl moiety.

[0479] Examples To compare the performance of patterning coatings 110 containing compositions with at least one mixed ligand compound, the following experiment was conducted.

[0480] Synthesis of compositions containing EM-80 In a dry 150 mL round-bottom flask equipped with a stirring bar, argon balloon, and septum, anhydrous THF (10 mL) and HCF2(CF2)7CH2OH (15.5 mmol, 3.1 equivalents) were added. NaH (25.5 mmol, 3.1 equivalents, 60% w / w) was carefully added to the flask at room temperature. The mixture was stirred until gas generation ceased. Next, toluene (100 mL, anhydrous) was added to the reaction mixture, followed by hexachlorocyclotriphosphazene at room temperature. The reaction mixture was stirred for 48 hours until the reaction was complete (confirmed by NMR analysis).

[0481] Water (100 mL) was added to the reaction mixture. Organic matter in the reaction mixture was removed by blowing air onto it. The remaining suspension was filtered under vacuum. The solid obtained after filtration was washed with water (3 × 200 mL) and DCM (2 × 200 mL) to obtain the final product (8.7 g, white solid).

[0482] The final product was analyzed by high-resolution electrospray ionization mass spectrometry (HRESI-MS). As summarized in Table 10 below, the HRESI-MS results suggest that a composition containing EM-80 (referred to herein as “Composition A”) was formed.

[0483] [Table 23-1]

[0484] [Table 23-2]

[0485] The samples were prepared by depositing a layer of composition A approximately 30 nm thick on each glass substrate in a vacuum. The exposed layer surface 11 of the resulting nucleation-modified film was then subjected to open-mask deposition of Ag-containing deposition material 531 at a rate of approximately 1 Å / s until a reference thickness of approximately 15 nm was achieved. Once the samples were prepared, EM transmittance measurements were performed to determine the amount of deposition material deposited on the exposed layer surface 11 of the patterned film 110. Those skilled in the art will understand that samples with little or no metal present may be substantially transparent, while samples with metal deposited on them, particularly as a sealed film, may generally exhibit substantially lower light transmittance.

[0486] Table 11 below shows the transmittance measured at wavelengths of 450 nm, 520 nm, and 850 nm after exposure of the sample to Ag vapor flux 532.

[0487] [Table 24]

[0488] The decrease in EM transmittance at wavelengths of 450, 520, and 850 nm after exposure of samples to Yb vapor flux 532 is summarized in Table 12: Yb:LiF (1:1 (volume ratio)) and MgAg (1:9 (volume ratio)). The decrease in EM transmittance was determined by measuring the EM transmittance through the sample and comparing it to a reference sample that was not exposed to Yb:LiF and MgAg vapor flux 532.

[0489] [Table 25]

[0490] As can be seen from the results in Tables 3, 4, 11, and 12, it was found here that in some non-limiting examples, nucleation-modified materials comprising compositions of multiple compounds, including but not limited to at least one mixed ligand compound containing EM-80, may exhibit different EM transmittance characteristics. In some non-limiting examples, nucleation-modified materials comprising compositions of multiple compounds, including but not limited to composition A, may exhibit EM transmittance characteristics at one of the wavelengths at least about 450 nm, at least about 520 nm, and at least about 850 nm, which are the EM transmittance characteristics of nucleation-modified materials (including but not limited to EM-4, EM-11, and EM-12) substantially lacking at least one of the core portion, first ligand portion, and second ligand portion. It was found that the decrease in transmittance at wavelengths of about 450 nm and 520 nm (including but not limited to) for patterning films 110 formed from composition A was substantially lower compared to patterning films 100 formed from EM-11 alone. While we do not wish to be limited to any particular theory, it can be assumed that, in at least some scenarios, a coating containing multiple compounds, such as composition A, may exhibit a decrease in transmittance that may be less than that of a coating containing a single compound.

[0491] Mixture with other materials In some non-limiting examples, at least one of the materials of the patterning coating 110, including but not limited to a first material and a second material, may contain at least one of F and Si. In some non-limiting examples, at least one of the first material and a second material may contain at least one of F and Si. In some non-limiting examples, the first material may contain at least one of F and Si, and the second material may contain at least one of F and Si. In some non-limiting examples, both the first material and the second material may contain F. In some non-limiting examples, both the first material and the second material may contain Si. In some non-limiting examples, each of the first material and the second material may contain at least one of F and Si.

[0492] In some non-limiting examples, at least one of the first and second materials may contain both F and Si. In some non-limiting examples, one of the first and second materials may not contain at least one of F and Si. In some non-limiting examples, the second material may contain at least one of F and Si, and the first material may not contain at least one of F and Si.

[0493] In some non-limiting examples, at least one of the materials of the patterning coating 110, including but not limited to a first material and a second material, may contain a compound containing F. In some non-limiting examples, at least one of the first material and the second material may contain a compound containing F and C. In some non-limiting examples, at least one of the first material and the second material may contain a compound containing F and C in an atomic ratio corresponding to one of the F / C quotients of at least about 0.5, at least about 0.7, at least about 1, at least about 1.5, at least about 2, and at least about 2.5.

[0494] In some non-limiting examples, the F to C atomic ratio counts the number of F atoms present in the compound structure, and for C atoms, it counts the number of sp atoms present in the compound structure.3 This can be determined by counting only the hybridized carbon atoms. In some non-limiting examples, at least one of the materials of the patterning material 110, including but not limited to the first and second materials, may contain a compound as part of its molecular substructure that includes a portion containing F and C in an atomic ratio corresponding to one of the F / C quotients of at least about 1, at least about 1.5, and at least about 2.

[0495] In some non-limiting examples, at least one of the materials of the patterning coating 110, which may be at least one of the first material and the second material, may include F, and at least one of the other materials of the patterning coating 110 may be sp 2 It may contain C atoms. In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to the first material and the second material, may contain F, and at least one of the other materials of the patterning coating 110 may contain sp 3 It may contain C atoms. In some non-limiting examples, for example, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may contain F and sp 3 It may contain C atoms, and at least one of the other materials of the patterned coating 110 is sp 2 It may contain C atoms. In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may contain F and sp 3 It may contain a carbon atom, and all F atoms bonded to the carbon atom are sp 3 It can bond to C atoms, and at least one of the other materials of the patterned coating 110 is sp 2 It may contain C atoms. In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may contain F and sp 3 It may contain a carbon atom, and all F atoms bonded to the carbon atom are sp 3It can bond to C atoms, and at least one of the other materials of the patterned coating 110 is sp 2 It may contain carbon atoms, but may not contain fluorine. As an unrestricted example, in any of the unrestricted examples described above, "at least one of the materials of the patterning coating 110" may correspond to the second material, and "at least one of the other materials of the patterning coating 110" may correspond to the first material.

[0496] As will be understood by those skilled in the art, F, sp 2 C atom, sp 3 The presence of material in a coating, including at least one of a carbon atom, an aromatic hydrocarbon moiety, another functional group, and other moieties, can be detected using a variety of methods known in the art, including, but not limited to, X-ray photoelectron spectroscopy (XPS).

[0497] In some non-limiting examples, at least one of the materials of the patterning film 110, which may be at least one of the first material and the second material, may contain F, and at least one of the other materials of the patterning film 110 may contain an aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning film 110, which may include but are not limited to at least one of the first material and the second material, may contain F, and at least one of the materials of the patterning film 110 may not contain an aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning film 110, which may include but are not limited to at least one of the first material and the second material, may contain F and may not contain an aromatic hydrocarbon moiety, and at least one of the other materials of the patterning film 110 may contain an aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including but not limited to the first material and the second material, may contain F and not contain an aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may contain an aromatic hydrocarbon moiety and not contain F. In some non-limiting examples, the aromatic hydrocarbon moiety includes at least one of a substituted polycyclic aromatic hydrocarbon moiety, an unsubstituted polycyclic aromatic hydrocarbon moiety, a substituted phenyl moiety, and an unsubstituted phenyl moiety.

[0498] In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may contain F, and at least one of the other materials of the patterning coating 110 may contain a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may contain F, and at least one of the materials of the patterning coating 110 may lack a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may contain F, may lack a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may contain a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including but not limited to at least one of the first material and the second material, may contain F and be devoid of a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may contain a polycyclic aromatic hydrocarbon moiety and be devoid of F.

[0499] While we do not wish to be bound by any particular theory, in some non-limiting examples, at least one sp is included, but not limited to, a polycyclic aromatic hydrocarbon moiety. 2 The presence of high surface tension moieties in a compound, including but not limited to C atom-containing moieties, can be assumed to reduce the ability of a patterning film 110 containing such a compound to function as a NIC for the deposition of a deposition material 531, including but not limited to metals and alloys containing but not limited to Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg). In some non-limiting examples, the patterning film 110 containing such a compound may have a substantially high initial adhesion probability due to the presence of high surface tension moieties.

[0500] In some non-limiting examples, at least one sp, including but not limited to a polycyclic aromatic hydrocarbon moiety. 2 It can be assumed that high surface tension portions in a compound, including but not limited to portions containing carbon atoms, can enhance the reliability of a patterned coating 110 by increasing at least one of the cohesive energy and stability of the patterned coating 110 (including but not limited to methods that increase such cohesive energy and stability).

[0501] While we do not wish to be bound by any particular theory, in some non-limiting examples, it can be hypothesized that the presence of a low surface tension moiety in a compound, which includes but is not limited to a fluoroalkyl moiety, or a moiety containing at least one F atom, may increase the ability of a patterning film 110 containing such a compound to function as a NIC for the deposition of a deposition material 531, which includes but is not limited to at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg), or at least one of metals and alloys. In some non-limiting examples, the patterning film 110 containing such a compound may have a substantially low initial adhesion probability due to the presence of the low surface tension moiety.

[0502] In some non-limiting examples, low surface tension moieties in a compound, including but not limited to fluoroalkyl moieties or moieties containing at least one F atom, can be assumed to reduce the reliability of a patterned coating 110 containing such a compound by methods (including but not limited to methods) that reduce the cohesive energy of the patterned coating 110.

[0503] In some non-limiting examples, mixed ligand compounds containing high-surface-tension and low-surface-tension portions may be applicable in some scenarios. In some non-limiting examples, such mixed ligand compounds may be applicable in providing a substantially homogeneous patterning film 110. While we do not wish to be bound by any particular theory, it can be assumed that a patterning film 110 containing a compound having high-surface-tension and low-surface-tension portions, including but not limited to a mixed ligand compound, may exhibit increased reliability and may also exhibit the ability to inhibit the deposition of a deposition material 531 containing but not limited to at least one of metals and alloys containing but not limited to at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg).

[0504] In some non-limiting examples, compositions comprising multiple compounds, each comprising at least one compound with a high surface tension portion and at least one compound with a low surface tension portion, may be applicable in several scenarios. While we do not wish to be bound by any particular theory, it can be assumed that patterning films 110 comprising such compositions may exhibit increased reliability and may also exhibit the ability to inhibit the deposition of deposition materials 531 comprising at least one metal and alloy comprising at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg).

[0505] In some non-limiting examples, at least one of the materials of the patterning coating 110, including but not limited to a first material and a second material, may be an organic-inorganic hybrid material.

[0506] In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to the first material and the second material, may include an oligomer.

[0507] In some non-limiting examples, at least one of the materials of the patterning coating 110, including but not limited to the first and second materials, may include a compound having a molecular structure including a skeleton and at least one functional group bonded to the skeleton. In some non-limiting examples, the skeleton may be an inorganic part, and at least one functional group may be an organic part.

[0508] In some non-limiting examples, at least one of the materials of the patterning coating 110, including but not limited to the first and second materials, may have a molecular structure containing a siloxane group. In some non-limiting examples, the siloxane group may be one of a linear siloxane group, a branched siloxane group, and a cyclic siloxane group. In some non-limiting examples, the skeleton may contain a siloxane group. In some non-limiting examples, the skeleton may contain a siloxane group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. In some non-limiting examples, such a compound may contain a fluorosiloxane.

[0509] In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may include at least one of the fluorocarbon moiety and the siloxane moiety, and at least one of the other materials of the patterning coating 110 may include a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may include at least one of the fluorocarbon moiety and the siloxane moiety, and at least one of the materials of the patterning coating 110 may not include a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may include at least one of the fluorocarbon moiety and the siloxane moiety, and may not include a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may include a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may include at least one of the fluorocarbon moiety and the siloxane moiety, and may not include a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may include a polycyclic aromatic hydrocarbon moiety, and may not include at least one of the fluorocarbon moiety and the siloxane moiety.

[0510] In some non-limiting examples, at least one of the materials of the patterning coating 110, including but not limited to the first and second materials, may have a molecular structure containing a silsesquioxane group. In some non-limiting examples, the silsesquioxane group may be polyoctahedral silsesquioxane (POSS). In some non-limiting examples, the skeleton may contain a silsesquioxane group. In some non-limiting examples, the skeleton may contain a silsesquioxane group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group.

[0511] In some non-limiting examples, at least one of the materials of the patterning coating 110, including but not limited to the first and second materials, may have a molecular structure comprising at least one of a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group. In some non-limiting examples, the aryl group may be at least one of phenyl and naphthyl. In some non-limiting examples, at least one C atom of the aryl group may be substituted with a heteroatom (in non-limiting examples, this may be at least one of O, N, and S) to derive a heteroaryl group. In some non-limiting examples, the skeleton may comprise at least one of a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group. In some non-limiting examples, the molecular structure of the compound may comprise (i) a skeleton comprising at least one of a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group, and (ii) at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group.

[0512] In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may contain F, and at least one of the other materials of the patterning coating 110 may contain a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may contain F, and at least one of the materials of the patterning coating 110 may not contain a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may contain F and may not contain a phenyl moiety, and at least one of the other materials of the patterning coating 110 may contain a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may contain F and not contain a phenyl moiety, and at least one of the other materials of the patterning coating 110 may contain a phenyl moiety and not contain F.

[0513] In some non-limiting examples, at least one of the materials of the patterning film 110, which includes but is not limited to at least one of the first material and the second material, may include at least one of the fluorocarbon moiety and the siloxane moiety, and at least one of the other materials of the patterning film 110 may include a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterning film 110, which includes but is not limited to at least one of the first material and the second material, may include at least one of the fluorocarbon moiety and the siloxane moiety, and at least one of the other materials of the patterning film 110 may include a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may include at least one of the fluorocarbon portion and the siloxane portion, and may not include the phenyl portion, and at least one of the other materials of the patterning coating 110 may include the phenyl portion, and may not include either the fluorocarbon portion or the siloxane portion.

[0514] In some non-limiting examples, at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may have a molecular structure comprising at least one of a substituted hydrocarbon group and an unsubstituted hydrocarbon group. In some non-limiting examples, the compound may have a molecular structure comprising at least one of a linear hydrocarbon group, a branched hydrocarbon group, and a cyclic hydrocarbon group. In some non-limiting examples, one or more C atoms of the hydrocarbon group may be substituted by heteroatoms comprising but is not limited to at least one of O, N, and S.

[0515] In some non-limiting examples, at least one of the materials of the patterning film 110, which includes but is not limited to at least one of the first material and the second material, may be a fluoropolymer. In some non-limiting examples, the compound may be a block copolymer containing F. In some non-limiting examples, the compound may be an oligomer. In some non-limiting examples, the oligomer may be a fluorooligomer. In some non-limiting examples, the compound may be a block oligomer containing F.

[0516] In some non-limiting examples, at least one of the materials of the patterning film 110, which includes but is not limited to at least one of the first material and the second material, may be a metal complex. In some non-limiting examples, the metal complex may be an organometallic complex. In some non-limiting examples, the organometallic complex may contain F. In some non-limiting examples, the organometallic complex may contain at least one ligand containing F. In some non-limiting examples, the at least one ligand containing F may contain a fluoroalkyl group.

[0517] In general, at least one of the molecular structures and molecular compositions of the material of the patterning film 110, which includes but is not limited to at least one of the first material and the second material, may differ. In some non-limiting examples, the materials may be selected to have at least one property that is substantially similar to and substantially different from each other, including but not limited to at least one of the monomer molecular structure, monomer backbone, and functional groups, the presence of common elements, similarity of molecular structures, characteristic surface energy, refractive index, molar mass, and thermal properties, including but not limited to at least one of the melting point, sublimation temperature, glass transition temperature, and thermal decomposition temperature.

[0518] When used herein, characteristic surface energy may, in some non-limiting examples, generally refer to the surface energy determined from a material, particularly with respect to a material. In some non-limiting examples, characteristic surface energy may be measured from a surface formed by a material deposited in thin film form. Various methods and theories are known for determining the surface energy of solids. In some non-limiting examples, surface energy may be determined based on a series of measurements of the contact angle at which various liquids can come into contact with a solid surface, in order to measure the contact angle between the liquid-vapor interface and the surface. In some non-limiting examples, the surface energy of a solid surface may be equal to the surface tension of the liquid having the highest surface tension that completely wets the surface. In some non-limiting examples, a Zisman plot may be used to determine the highest surface tension value that results in complete wetting with the surface (i.e., a contact angle of 0°).

[0519] In some non-limiting examples, at least one of the first and second materials of the patterning film 110 may be an oligomer.

[0520] In some non-limiting examples, the first material may contain a first oligomer, and the second material may contain a second oligomer. Each of the first and second oligomers may contain multiple monomers.

[0521] In some non-limiting examples, at least one molecular structure fragment of the material of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may be represented by formula (I). (Mon) n (I) During the ceremony, Mon represents monomer, n is an integer greater than or equal to 2.

[0522] In some non-restrictive examples, n can be one integer from approximately 2 to 100, approximately 2 to 50, approximately 3 to 20, approximately 3 to 15, approximately 3 to 10, and approximately 3 to 7.

[0523] In some non-restrictive examples, the first material may be a linked cyclophosphazene, and the molecular structure of the second material may independently be represented by formula (I).

[0524] In some non-limiting examples, at least one functional group of the monomer may have a surface tension of one of the following values: about 25 dynes / cm or less, about 21 dynes / cm or less, about 20 dynes / cm or less, about 19 dynes / cm or less, about 18 dynes / cm or less, about 17 dynes / cm or less, about 16 dynes / cm or less, about 15 dynes / cm or less, about 14 dynes / cm or less, about 13 dynes / cm or less, about 12 dynes / cm or less, about 11 dynes / cm or less, and about 10 dynes / cm or less.

[0525] In some non-limiting examples, the monomer may contain at least one of the CF2 and CF2H moieties. In some non-limiting examples, the monomer may contain at least one of the CF2 and CF3 moieties. In some non-limiting examples, the monomer may contain a CH2CF3 moiety. In some non-limiting examples, the monomer may contain at least one of C and O. In some non-limiting examples, the monomer may contain a fluorocarbon monomer. In some non-limiting examples, the monomer may contain at least one of the vinyl fluoride moiety, vinylidene fluoride moiety, tetrafluoroethylene moiety, chlorotrifluoroethylene moiety, hexafluoropropylene moiety, and fluorinated 1,3-dioxole moiety.

[0526] In some non-limiting examples, a monomer may include a monomer skeleton and functional groups. In some non-limiting examples, functional groups may be attached to the monomer skeleton directly and / or via linking groups. In some non-limiting examples, a monomer may include linking groups, which may be attached to the monomer skeleton and functional groups. In some non-limiting examples, a monomer may include multiple functional groups, which may be the same or different from each other. In such examples, each functional group may be attached to the monomer skeleton directly and / or via linking groups. In some non-limiting examples, if multiple functional groups are present, multiple linking groups may also be present.

[0527] In some non-limiting examples, the molecular structure of the second material may contain multiple different monomers. In some non-limiting examples, such a molecular structure may contain monomer species having at least one of different molecular compositions and molecular structures. Non-limiting examples of such molecular structures include those represented by formulas (II) and (III). (Mon A ) k (Mon B ) m (II) (Mon A ) k (Mon B ) m (Mon C ) o (III) During the ceremony, Mon A Mon B , and Mon C Each represents a monomer species, k, m, and o each represent an integer greater than or equal to 2.

[0528] In some non-limiting examples, k, m, and o represent one integer from approximately 2 to 100, approximately 2 to 50, approximately 3 to 20, approximately 3 to 15, approximately 3 to 10, and approximately 3 to 7, respectively. Those skilled in the art will see various non-limiting examples and descriptions relating to the monomer, Mon. A Mon B , and MonC You will understand that this may be applicable to each of them.

[0529] In some non-restrictive examples, monomers can be represented by formula (IV). M-(LR x ) y (IV) During the ceremony, M represents the monomer skeleton unit. L represents a linking group, R represents a functional group. x is an integer between 1 and 4. y is an integer between 1 and 3.

[0530] In some non-restrictive examples, a linking group can be represented by a single bond, or at least one of O, N, NH, C, CH, CH2, and S.

[0531] Various non-limiting examples of functional groups described herein may apply to R of formula IV. In some non-limiting examples, the functional group R may include an oligomer unit, which may further include a plurality of functional group monomer units. In some non-limiting examples, the functional group monomer unit may be at least one of CH2 and CF2. In some non-limiting examples, such functional group monomer units may be bonded together to form at least one of alkyl and fluoroalkyl oligomer units. In some non-limiting examples, the oligomer unit may further include a functional group terminal unit. In some non-limiting examples, the functional group terminal unit may be located at the end of the oligomer unit and bonded to the functional group monomer unit. In some non-limiting examples, the end to which the functional group terminal unit may be located may correspond to a fragment of the functional group that is distal to the monomer backbone unit. In some non-limiting examples, the functional group terminal unit may include at least one of CF2H and CF3.

[0532] In some non-limiting examples, a monomer skeleton unit M may have a high surface tension. In some non-limiting examples, a monomer skeleton unit may have a higher surface tension than at least one of the functional groups R to which it is bonded. In some non-limiting examples, a monomer skeleton unit may have a higher surface tension than any of the functional groups R to which it is bonded.

[0533] In some non-limiting examples, a monomer skeleton unit may have a surface tension of at least about 25 dynes / cm, at least about 30 dynes / cm, at least about 40 dynes / cm, at least about 50 dynes / cm, at least about 75 dynes / cm, at least about 100 dynes / cm, at least about 150 dynes / cm, at least about 200 dynes / cm, at least about 250 dynes / cm, at least about 500 dynes / cm, at least about 1,000 dynes / cm, at least about 1,500 dynes / cm, and at least about 2,000 dynes / cm.

[0534] In some non-limiting examples, the monomer backbone unit may contain P and N, including but not limited to phosphazenes, with a double bond between P and N, and may be represented as at least one of "NP" and "N=P". In some non-limiting examples, the monomer backbone unit may contain SiO 3 / 2 It may contain, but is not limited to, silsesquioxane, which can be represented as such, Si and O.

[0535] In some non-limiting examples, for example, at least a portion of the molecular structure of at least one of the materials of the patterning coating 110, which may be at least one of the first material and the second material, is represented by formula (V), (NP-(LR x ) y ) n (V) During the ceremony, NP represents the phosphazene monomer skeleton unit, L represents a linking group, R represents a functional group. x is an integer between 1 and 4. y is an integer between 1 and 3. n is an integer greater than or equal to 2.

[0536] In some non-restrictive cases, the molecular structure of the second material can be represented by formula (V). In some non-restrictive cases, the second material may be a cyclophosphazene. In some non-restrictive cases, the molecular structure of a cyclophosphazene can be represented by formula (V).

[0537] In some non-limiting examples, L may represent O, x may be 1, and R may represent a fluoroalkyl group. In some non-limiting examples, at least a fragment of the molecular structure of the second material may be represented by formula (VI). (NP(OR f )2) n (VI) During the ceremony, R f This represents a fluoroalkyl group, n is an integer between 3 and 7.

[0538] In some non-limiting examples, the fluoroalkyl group may include at least one of the following: CF2, CF2H, CH2CF3, and CF3. In some non-limiting examples, the fluoroalkyl group may be represented by formula (VII),

[0539] [ka] During the ceremony, p is an integer between 1 and 5. q is an integer between 6 and 20. Z represents one of H and F.

[0540] In some non-restrictive cases, p can be 1.

[0541] In some non-limiting examples, the fluoroalkyl group R in formula (VI) f This can be expressed by equation (VII).

[0542] In some non-limiting examples, at least a fragment of the molecular structure of the second material may be represented by formula (VIII). (SiO 3 / 2 -(LR)) n (VIII) During the ceremony, L represents a linking group, R represents a functional group. n is an integer between 6 and 12.

[0543] In some non-limiting examples, L may represent the presence of at least one of a single bond, O, a substituted alkyl, and an unsubstituted alkyl. In some non-limiting examples, n may be one of 8, 10, and 12. In some non-limiting examples, R may include a functional group having low surface tension. In some non-limiting examples, R may include at least one of an F-containing group and a Si-containing group. In some non-limiting examples, R may include at least one of a fluorocarbon group and a siloxane-containing group. In some non-limiting examples, R may include at least one of a CF2 group and a CF2H group. In some non-limiting examples, R may include at least one of a CF2 and a CF3 group. In some non-limiting examples, R may include a CH2CF3 group. In some non-limiting examples, the material represented by formula (VIII) may be POSS.

[0544] In some non-limiting examples, at least one molecular structure fragment of the material of the patterning coating 110, which includes but is not limited to the second material, may be represented by formula (IX). (SiO 3 / 2 -R f )n (IX) During the ceremony, n is an integer between 6 and 12. R f This represents a fluoroalkyl group.

[0545] In some non-restrictive cases, n may be one of 8, 10, and 12. In some non-restrictive cases, R f It may contain functional groups having low surface tension. In some non-limiting examples, R f This may include at least one of the CF2 portion and the CF2H portion. In some non-restrictive examples, R f This may include at least one of the CF2 and CF3 portions. In some non-restrictive examples, R f This may include the CH2CF3 portion. In some non-restrictive examples, the material represented by formula (IX) may be POSS.

[0546] In some non-limiting examples, the fluoroalkyl group R in formula (IX) f This can be expressed by equation (VII).

[0547] In some non-limiting examples, at least a fragment of the molecular structure of the second material may be represented by formula (X), (SiO 3 / 2 -(CH2) x (CF3)) n (X) During the ceremony, x is an integer between 1 and 5. n is an integer between 6 and 12.

[0548] In some non-restrictive examples, n may be one of 8, 10, and 12.

[0549] In some non-restrictive examples, the compound represented by formula (X) may be a POSS.

[0550] In some non-limiting examples, the functional group R and the fluoroalkyl group R fAt least one of these can be independently selected for each occurrence of such group in any of the aforementioned formulas. Those skilled in the art will also understand that any of the aforementioned formulas may represent a substructure of a compound, and that at least one of additional groups and additional parts not expressly shown in the above formulas may be present. Those skilled in the art will also understand that the various formulas provided in this application may represent at least one of linear, branched, cyclic, cyclic-linear, and crosslinked structures.

[0551] While several non-limiting examples have been described herein with respect to the first and second materials, the patterning film may further include at least one additional material, including but not limited to at least one of the third and fourth materials, and it will be understood that the descriptions relating to at least one of the molecular structures and properties of the first material, the second material, the first oligomer, and the second oligomer may be applicable with respect to the additional material that may be contained in the patterning film 110.

[0552] In some non-limiting examples, the difference in sublimation temperatures between multiple materials of the patterning coating 110, including but not limited to the difference between the first material and the second material, may be one of the following: approximately 5°C or less, approximately 10°C or less, approximately 15°C or less, approximately 20°C or less, approximately 30°C or less, approximately 40°C or less, and approximately 50°C or less.

[0553] In some non-limiting examples, the difference in melting points of multiple materials in the patterning coating 110, including but not limited to the difference between the first material and the second material, may be one of the following: approximately 5°C or less, approximately 10°C or less, approximately 15°C or less, approximately 20°C or less, approximately 30°C or less, approximately 40°C or less, and approximately 50°C or less.

[0554] In some non-limiting examples, at least one of the materials of the patterning coating 110, including but not limited to the first material and the second material, may have a low characteristic surface energy.

[0555] In some non-limiting examples, at least one of the materials of the patterning coating 110, including but not limited to the first material and the second material, may have a low characteristic surface energy of about 20 dynes / cm or less.

[0556] In some non-limiting examples, the surface energies of at least two materials of the patterning coating 110, including but not limited to the surface energies of the first and second materials, are one of the following: approximately 25 dynes / cm or less, approximately 21 dynes / cm or less, approximately 20 dynes / cm or less, approximately 19 dynes / cm or less, approximately 18 dynes / cm or less, approximately 17 dynes / cm or less, approximately 16 dynes / cm or less, approximately 15 dynes / cm or less, approximately 14 dynes / cm or less, approximately 13 dynes / cm or less, approximately 12 dynes / cm or less, approximately 11 dynes / cm or less, and approximately 10 dynes / cm or less.

[0557] In some non-limiting examples, the refractive index of at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, at least one of the refractive indices at 500 nm and 460 nm may be one of about 1.5 or less, about 1.45 or less, about 1.44 or less, about 1.43 or less, about 1.42 or less, and about 1.41 or less.

[0558] In some non-limiting examples, the molar mass of at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may be one of at least about 750 g / mol, at least about 1,000 g / mol, at least about 1,250 g / mol, at least about 1,500 g / mol, at least about 1,750 g / mol, and at least about 2,000 g / mol.

[0559] In some non-limiting examples, the molar mass of at least one of the materials of the patterning coating 110, which includes but is not limited to at least one of the first material and the second material, may be one of about 10,000 g / mol or more, about 8,000 g / mol or more, about 7,000 g / mol or more, and about 5,000 g / mol or more.

[0560] In some non-limiting examples, the patterned coating 110 may comprise multiple materials exhibiting similar thermal properties, including, but not limited to, at least one of the melting point and sublimation temperature.

[0561] In some non-limiting examples, a method for manufacturing a layered semiconductor device 100, including but not limited to an optoelectronic device 200, may include the operation of depositing a patterning film on a first exposed layer surface 11 of the device 100 in a first lateral portion 101, and the operation of depositing a deposition material 531 on a second exposed layer surface 11 of the device 100 in a second lateral portion 102. The initial adhesion probability of the deposition material 531 for the patterning film 110 on the exposed layer surface 11 in the first portion 101 may be substantially smaller than the initial adhesion probability of the deposition material 531 for the exposed layer surface 11 in the second portion 102, so that the exposed layer surface 11 of the patterning film 110 in the first portion 101 may substantially lack a sealing film 140 of the deposition material 531. In some non-limiting examples, the patterning film 110 deposited on the first exposed layer surface 11 of the device 100 may include a first material and a second material.

[0562] In some non-limiting examples, depositing a patterned coating 110 on the first exposed layer surface 11 of device 100 may include providing a mixture containing multiple materials and depositing the mixture on the first exposed layer surface 11 of device 100 to form a patterned coating 110 thereon. In some non-limiting examples, the mixture may include a first material and a second material. In some non-limiting examples, both the first material and the second material may be deposited on the first exposed layer surface 11 to form a patterned coating 110 thereon.

[0563] In some non-limiting examples, a mixture containing multiple materials may be deposited on the first exposed layer surface 11 of device 100 by a PVD process including but not limited to thermal deposition. In some non-limiting examples, a patterned coating 110 may be formed by evaporating the mixture from a single evaporation source and depositing the mixture on the first exposed layer surface 11 of device 100. In some non-limiting examples, a mixture containing a first material and a second material, as an example, may be placed in a single evaporation source (crucible) heated under vacuum. When the evaporation temperature of the materials is reached, the vapor flux generated therefrom may be directed toward the first exposed layer surface 11 of device 100 to deposit the patterned coating 110 thereon.

[0564] While we do not wish to be bound by any particular theory, it can be assumed that a composition comprising multiple materials, including but not limited to a first material and a second material having at least one of substantially similar sublimation temperatures and molar masses, may be applicable in several scenarios requiring the formation of a substantially homogeneous patterned coating 110, even over long deposition periods (during which the patterned coating 110 may be deposited from the crucible containing such composition).

[0565] For the purposes of this disclosure, the terms “composition” and “mixture” may be used interchangeably to refer to the same concept.

[0566] In some non-limiting examples, the patterning coating 110 may be deposited by co-deposition of the first material and the second material. In some non-limiting examples, the first material may be evaporated from a first evaporation source and the second material may be evaporated simultaneously from a second evaporation source to form a mixture in the gas phase, which may then be co-deposited on the surface 11 of the first exposed layer to provide the patterning coating 110 thereon.

[0567] substrate In some non-limiting examples, the substrate 10 may include a base substrate 215. In some non-limiting examples, the base substrate 215 may be formed from a material suitable for its use, including but not limited to one of the following: an inorganic material including but not limited to at least one of Si, glass, metal (including but not limited to metal foil), sapphire, and other inorganic materials, and an organic material including but not limited to a polymer including but not limited to at least one of polyimide and Si-based polymers. In some non-limiting examples, the base substrate 215 may be one of rigid and flexible. In some non-limiting examples, the substrate 10 may be defined by at least one plane. In some non-limiting examples, the substrate 10 may have at least one exposed layer surface 11 supporting the remaining components of the front plane 201 of the device 200, including but not limited to at least one of a first electrode 220, one or more semiconductor layers 230, and a second electrode 240.

[0568] In some non-limiting examples, such a surface may be at least one of an organic surface and an inorganic surface.

[0569] In some non-limiting examples, the substrate 10 may include, in addition to the base substrate 215, at least one additional organic and inorganic layer (not shown or specifically described herein) supported on the exposed layer surface 11 of the base substrate 215.

[0570] In some non-limiting examples, such additional layers may include at least one organic layer that can replace, supplement, or complement at least one of the semiconductor layers 230.

[0571] In some non-limiting examples, such additional layer may include at least one inorganic layer which may include at least one electrode, which in some non-limiting examples may include, replace, or complement at least one of the first electrode 220 and the second electrode 240.

[0572] Backplane and TFT structure embodied within it In some non-limiting examples, such additional layers may include a backplane 202. In some non-limiting examples, the backplane 202 may comprise at least one power circuit and switching element for driving the device 200, including but not limited to one of one or more components thereof, of one or more electronic thin-film transistor (TFT) structures 206 that can be formed by a photolithography process.

[0573] In some non-limiting examples, the backplane 202 of the substrate 10 may include at least one electronic component (including but not limited to optoelectronic components), including but not limited to one of a transistor, resistor, and capacitor, which may function as one of an active matrix device 200 and a passive matrix device 200. In some non-limiting examples, such a structure may be a TFT structure 206.

[0574] In some non-limiting examples, the TFT structure 206 may include one of the top-gate, bottom-gate, n-type, and p-type TFT structures 206. In some non-limiting examples, the TFT structure 206 may incorporate one of the following: amorphous Si (a-Si), indium gallium zinc oxide (IGZO), and low-temperature polycrystalline Si (LTPS).

[0575] First electrode The first electrode 220 may be deposited on the substrate 10. In some non-limiting examples, the first electrode 220 may be electrically coupled to at least one of the terminals of a power supply and / or ground. In some non-limiting examples, the first electrode 220 may be thus coupled through at least one drive circuit, which may incorporate at least one TFT structure 206 within the backplane 202 of the substrate 10.

[0576] In some non-limiting examples, the first electrode 220 may comprise one of an anode and a cathode. In some non-limiting examples, the first electrode 220 may be an anode.

[0577] In some non-limiting examples, the first electrode 220 may be formed by depositing at least one thin conductive film on (part of) the substrate 10. In some non-limiting examples, there may be a plurality of first electrodes 220 arranged in a spatial arrangement on the lateral surface of the substrate 10. In some non-limiting examples, at least one of such at least one first electrode 220 may be deposited on (part of) a TFT insulating layer 207 arranged laterally in a spatial arrangement. In that case, in some non-limiting examples, at least one of such at least one first electrode 220 may extend through an opening in the corresponding TFT insulating layer 207 and be electrically coupled to an electrode of the TFT structure 206 in the backplane 202.

[0578] In some non-limiting examples, at least one first electrode 220 and at least one of its at least one thin film may include a variety of materials, including but not limited to at least one metallic material, including but not limited to at least one of Mg, Al, calcium (Ca), Zn, Ag, Cd, barium (Ba), and Yb (including but not limited to alloys containing any of such materials), at least one metal oxide, including but not limited to TCO, including but not limited to a ternary composition such as at least one of FTO, IZO, and ITO in various proportions (including but not limited to any combination thereof in one or more layers (of which at least one layer may be non-limitingly a thin film)).

[0579] Second electrode The second electrode 240 may be deposited on at least one semiconductor layer 230. In some non-limiting examples, the second electrode 240 may be electrically coupled to at least one of the power supply terminals and ground. In some non-limiting examples, the second electrode 240 may be thus coupled through at least one drive circuit, which may incorporate at least one TFT structure 206 within the backplane 202 of the substrate 10.

[0580] In some non-limiting examples, the second electrode 240 may comprise either an anode or a cathode. In some non-limiting examples, the second electrode 240 may be a cathode.

[0581] In some non-limiting examples, the second electrode 240 may be formed by depositing the deposition layer 130, in some non-limiting examples, as at least one thin film on at least one semiconductor layer 230 (or a portion thereof).

[0582] In some non-limiting examples, the deposited layer 130 may be deposited on a second portion 102 by exposing the exposed layer surface 11 of a device 200, which may (in some non-limiting examples) include at least one semiconductor layer 230, to the evaporative flux 412 of a patterning material 411, by using a shadow mask 415 (in some non-limiting ways). Whether or not a shadow mask 415 is used, in some non-limiting examples, as shown in Figure 2, the patterning material 110 may be substantially limited in its lateral aspect from the luminescent region 210 to the non-luminescent region 211 (including, but not limited to, at least one signal-transmitting region 212 located therein).

[0583] In some non-limiting examples, there may be multiple second electrodes 240 arranged in a spatial configuration on the lateral surface of at least one semiconductor layer 230.

[0584] In some non-limiting examples, at least one second electrode 240 may contain a variety of materials, including, but not limited to, one or more metallic materials containing, but not limited to, at least one of Mg, Al, Ca, Zn, Ag, Cd, Ba, and Yb (including, but not limited to, alloys containing any of such materials), at least one metal oxide containing, but not limited to, TCO, including, but not limited to, a ternary composition such as, but not limited to, one of FTO, IZO, and ITO in various proportions, and various proportions of zinc oxide (ZnO), as well as other oxides containing at least one of In and Zn, and one or more non-metallic materials (including, but not limited to, at least one of which may be a non-limiting thin conductive film). In some non-limiting examples, for Mg:Ag alloys, such alloy composition may be in the range of about 1:9 to 9:1 by volume.

[0585] In some non-limiting examples, the deposition of the second electrode 240 may be carried out using one of the open-mask and mask-free deposition processes.

[0586] In some non-limiting examples, the second electrode 240 may include multiple such coatings. In some non-limiting examples, such coatings may be separate coatings arranged on top of each other.

[0587] In some non-limiting examples, the second electrode 240 may include a Yb / Ag bilayer coating. In some non-limiting examples, such a bilayer coating may be formed by depositing a Yb coating followed by an Ag coating. In some non-limiting examples, the thickness of such Ag coating may exceed the thickness of the Yb coating.

[0588] In some non-limiting examples, the second electrode 240 may be a multi-coated electrode 240 comprising one or more of the metal coating and oxide coatings.

[0589] In some non-limiting examples, the second electrode 240 may contain fullerene and Mg.

[0590] In some non-limiting examples, such coatings can be formed by depositing a fullerene coating followed by a Mg coating. In some non-limiting examples, fullerene-containing Mg alloy coatings can be formed by dispersing fullerene within a Mg coating. Non-limiting examples of such coatings are described in U.S. Patent Application Publication No. 2015 / 0287846, published on October 8, 2015, and at least one of International Application PCT / IB No. 2017 / 054970, filed on August 15, 2017, and published as International Publication No. 2018 / 033860 on February 22, 2018.

[0591] Semiconductor layer In some non-limiting examples, at least one semiconductor layer 230 may include multiple layers 231, 233, 235, 237, 239, any of these layers may, in some non-limiting examples, be arranged in a stacked configuration within a thin film, the stacked configuration may include, but is not limited to, at least one of the following: a hole injection layer (HIL) 231, a hole transport layer (HTL) 233, an emissive layer (EML) 235, an electron transport layer (ETL) 237, and an electron injection layer (EIL) 239.

[0592] In some non-limiting examples, at least one semiconductor layer 230 can form a “tandem” structure containing multiple EMLs 235. In some non-limiting examples, such a tandem structure may also include at least one charge generation layer (CGL).

[0593] Those skilled in the art will readily understand that the structure of device 200 can be modified by omitting or combining at least one of the semiconductor layers 231, 233, 235, 237, and 239.

[0594] In some non-limiting examples, any of layers 231, 233, 235, 237, and 239 of at least one semiconductor layer 230 may contain any number of sublayers. In some non-limiting examples, any of such layers 231, 233, 235, 237, and 239 (including, but not limited to, its sublayers) may contain a variety of mixtures and compositional gradients. In some non-limiting examples, not shown, the device 200 may contain at least one layer containing one of inorganic materials and an organometallic material, and is not necessarily limited to a device 200 composed solely of organic materials. In some non-limiting examples, the device 200 may contain at least one quantum dot (QD).

[0595] In some non-limiting examples, HIL231 can be formed by injecting holes from the anode, and in some non-limiting examples, by using a hole injection material that can be easily formed.

[0596] In some non-limiting cases, HTL233 can be formed using hole transport materials that may exhibit high hole mobility.

[0597] In some non-limiting cases, ETL237 can be formed using electron transport materials that can exhibit high electron mobility.

[0598] In some non-limiting examples, EIL239 can be formed using electron injection materials that facilitate electron injection from the cathode.

[0599] In some non-limiting examples, at least one EML235 may be formed by doping a host material with at least one emitter material. In some non-limiting examples, the emitter material may be at least one of a fluorescent emitter material, a phosphorescent emitter material, and a thermally activated delayed fluorescence (TADF) emitter material.

[0600] In some non-limiting examples, the emitter material may be one of the following: a red (R) emitter material, a green (G) emitter material, and a blue (B) emitter material, i.e., an emitter material that facilitates the emission of red (R), green (G), and blue (B) light, respectively.

[0601] In some non-limiting examples, device 200 may be an OLED in which at least one semiconductor layer 230 includes at least one EML 235 inserted between conductive thin-film electrodes 220, 240, thereby allowing holes to be injected into at least one semiconductor layer 230 through the anode and electrons to be injected into at least one semiconductor layer 230 through the cathode, move toward the at least one EML 235, couple and emit light in the form of photons.

[0602] In some non-limiting examples, device 200 may be an electroluminescent QD device 200 which may include an active layer in which at least one semiconductor layer 230 contains at least one QD. When a power supply provides current to the first electrode 220 and the second electrode 240, light including but not limited to photons may be emitted from the active layer, which includes at least one semiconductor layer 230 positioned between them.

[0603] In some non-limiting examples, including cases where device 200 includes a lighting panel, the entire lateral surface of device 200 may correspond to a single radiating element. Thus, the substantially flat cross-sectional profile shown in Figure 2 can extend substantially along the entire lateral surface of device 200 so that light is radiated from device 200 substantially along its entire lateral range. In some non-limiting examples, such a single radiating element may be driven by a single drive circuit of device 200.

[0604] In some non-limiting examples, including when the device 200 includes a display module, the lateral surface of the device 200 may be subdivided into multiple light-emitting regions 210 of the device 200, and the longitudinal surface of the device structure 200 within each of the light-emitting regions 210 may emit light when energized.

[0605] Those skilled in the art will readily understand that the structure of device 200 can be altered by introducing at least one additional layer (not shown) at a suitable location within at least one semiconductor layer 230 stack, including but not limited to at least one of the following: a hole blocking layer (HBL) (not shown), an electron blocking layer (EBL) (not shown), a charge transport layer (CTL) (not shown), and a charge injection layer (CIL) (not shown).

[0606] In some non-limiting examples, the patterned film 110 may be formed simultaneously with at least one semiconductor layer 230. In some non-limiting examples, at least one material used to form the patterned film 110 may also be used to form at least one semiconductor layer 230. In some non-limiting examples, the ETL 237 of at least one semiconductor layer 230 may be a patterned film 110 that can be deposited in a first portion 101 and a second portion 102 during the deposition of at least one semiconductor layer 230. Then, the EIL 239 can be selectively deposited in the light-emitting region 210 of the second portion 102 on the ETL 237 such that the exposed layer surface 11 of the ETL 237 in the first portion 101 substantially lacks the EIL 239. Next, the exposed layer surface 11 of the EIL 239 within the light-emitting region 210 and the exposed layer surface of the ETL 237, which functions as a patterning film 110, can be exposed to the vapor flux 532 of the deposition material 531 to form a sealed film 140 of the deposition layer 130 on the EIL 239 in the second portion 102 and a discontinuous layer 160 of the deposition material 531 on the EIL 237 in the first portion 101. In such non-limiting examples, multiple steps for fabricating the device 200 can be reduced.

[0607] Display panels and user devices Referring here to Figure 3, a cross-sectional view of an exemplary layered optoelectronic device 200, such as a display panel 300, is shown. In some non-limiting examples, the display panel 300 may include multiple layers deposited on a substrate 10, terminating at the outermost layer forming its surface 301. In some non-limiting examples, the display panel 300 may be a version of device 200.

[0608] The surface 301 of the display panel 300 may extend along its lateral surface substantially along a plane defined by a lateral axis.

[0609] In some non-limiting examples, surface 301, or more precisely, the entire display panel 300, may function as the surface of a user device 310 through which at least one EM signal 331 can be exchanged at a non-zero angle with respect to the plane of surface 301. In some non-limiting examples, the user device 310 may be a computing device 310, for example, not limited to a smartphone, tablet, laptop, electronic reader, and any other electronic device 310 (including, but not limited to, automotive displays, windshields, household appliances, and medical, commercial, and industrial devices 310, as well as monitors, television sets, and smart devices 310).

[0610] In some non-limiting examples, the surface 301 corresponds to at least one of a body 320 and an opening 321 therein, which can accommodate at least one under-display component 330, and in some non-limiting examples, it can be fitted to it.

[0611] In some non-limiting examples, at least one under-display component 330 may be formed integrally with the display panel 300 on the surface opposite to the surface 301, or may be formed as an assembled module.

[0612] In some non-limiting examples, at least one opening 322 may be formed within the display panel 300 to allow the exchange of at least one EM signal 331 through the surface 301 of the display panel 300 at a non-zero angle with respect to a plane defined by a lateral axis (and consequently including, but not limited to, layers of the display panel 300, including, but not limited to, the surfaces 301 of the display panel 300).

[0613] In some non-limiting examples, at least one aperture 322 may be understood to include one of the absence and reduction of at least one thickness and volume of a substantially opaque coating distributed across the display panel 300. In some non-limiting examples, at least one aperture 322 may be embodied as a signal-transmitting region 212 as described herein.

[0614] Regardless of how at least one aperture 322 is materialized, at least one EM signal 331 can pass through it so as to pass through the surface 301. As a result, at least one EM signal 331 can be considered to exclude any light that may extend along a plane defined by the lateral axis, including but not limited to any current that may be conducted laterally across at least one particle structure 150 across the display panel 300.

[0615] Furthermore, those skilled in the art will understand that at least one EM signal 331 can be distinguished from light itself, including but not limited to electric current and the electric field it generates, in that at least one EM signal 331 can transmit some informational content, including but not limited to an identifier that can distinguish at least one EM signal 331 from the other EM signals 331, either alone or in combination with other EM signals 331. In some non-limiting examples, informational content may be transmitted by specifying, modifying, and modulating at least one of the wavelength, frequency, phase, timing, bandwidth, intensity, time of flight, resistance, capacitance, impedance, conductance, and other characteristics of at least one EM signal 331.

[0616] In some non-limiting examples, at least one EM signal 331 passing through at least one aperture 322 of the display panel 300 may include at least one photon, and in some non-limiting examples, may have a wavelength spectrum that is within the range of at least one of the visible spectrum, the IR spectrum, and the NIR spectrum, but is not limited to that.

[0617] In some non-limiting examples, at least one EM signal 331 passing through at least one aperture 322 of the display panel 300 may include ambient light incident on it.

[0618] In some non-limiting examples, at least one EM signal 331 exchanged through at least one aperture 322 of the display panel 300 may be transmitted and received by at least one under-display component 330.

[0619] In some non-limiting examples, at least one under-display component 330 may have the size of at least one signal-transmitting region 212, but may also be under multiple, or at least one light-emitting region 210 extending between them. Similarly, in some non-limiting examples, at least one under-display component 330 may have the size of at least one aperture 322.

[0620] In some non-limiting examples, at least one under-display component 330 receives at least one EM signal 331 that passes through the user device 310 and then through at least one aperture 322. r Receiver 330 adapted to receive and process r This may include the receiver 330. r Non-exclusive examples include under-display cameras (UDCs), and sensors including, but not limited to, IR sensors / detectors, NIR sensors / detectors, LIDAR detection modules, fingerprint detection modules, light detection modules, IR (proximity) detection modules, iris recognition detection modules, and face recognition detection modules (including, but not limited to, some of these).

[0621] In some non-limiting examples, at least one under-display component 330 transmits at least one transmitted EM signal 331 through at least one aperture 322 beyond the user device 310. t Transmitter 330 adapted to emit t This may include the transmitter 330. t Non-exclusive examples include light sources, including but not limited to built-in flashes, torches, IR emitters, NIR emitters, LIDAR detection modules, fingerprint detection modules, light detection modules, IR (proximity) detection modules, iris recognition detection modules, and face recognition detection modules.

[0622] In some non-limiting examples, at least one received EM signal 331 r is at least one transmitted EM signal 331 t It may include at least a fragment of which is one of the following: reflected from the outer surface of the user device 310 (including but not limited to the user 30), and / or otherwise returned by the outer surface.

[0623] In some non-limiting examples, at least one EM signal 331 that passes through at least one aperture 322 of the display panel 300 beyond the user device 310 includes a transmitter 330 t A transmitted EM signal 331 is emitted by at least one under-display component 330 which may include t This includes, but is not limited to, the received EM signal 331, which is emitted from the display panel 300 and received through at least the aperture 322 of the display panel 300. r Receiver 330 r It may return to at least one under-display component 330 which may include.

[0624] In some non-limiting examples, the under-display component 330 may include an IR emitter and an IR sensor. In some non-limiting examples, such under-display component 330 may include, as part thereof, as a component, or as one of a module, at least one of the following: a dot matrix projector, a time-of-flight (ToF) sensor module capable of operating as at least one of a direct ToF sensor and an indirect ToF sensor, a vertical cavity surface-emitting laser (VCSEL), a floodlight illuminator, an NIR imager, an aliasing optical system, and a diffraction grating.

[0625] In some non-limiting examples, there may be multiple under-display components 330 within the user device 310, the first of which transmits at least one transmitted EM signal 331 through at least one aperture 322 beyond the user device 310.t Transmitter 330 for emitting t This may include, the second of which is at least one received EM signal 331 r Receiver 330 for receiving r This may include. In some non-limiting examples, such transmitter 330 t and receiver 330 r This can be embodied in a single under-display component 330.

[0626] In some non-limiting examples, the display panel 300 may include at least one signal switching unit 303 and at least one display unit 307.

[0627] In some non-limiting examples, at least one display unit 307 may comprise a plurality of light-emitting regions 210 arranged in a horizontal pattern. In some non-limiting examples, the light-emitting regions 210 within at least one display unit 307 may correspond to (sub)pixels 1015 / 216 of the display panel 300.

[0628] In some non-limiting examples, at least one signal exchange unit 303 may comprise at least one light-emitting region 210 and at least one signal-transmitting region 212. In some non-limiting examples, at least one light-emitting region 210 within at least one signal exchange unit 303 may correspond to (sub)pixels 1015 / 216 of the display panel 300, and in some non-limiting examples, may be substantially laid out in a lateral pattern including a lateral pattern similar to that of at least one display unit 307 (including, but not limited to, the same lateral pattern).

[0629] In some non-limiting examples, at least one display unit 307 may be adjacent to at least one signal exchange unit 303, and in some non-limiting examples, it may be separated by at least one signal exchange unit 303.

[0630] In some non-limiting examples, at least one signal exchange unit 303 may be positioned close to the edge of the display panel 300, including but not limited to at least one of its edges and corners. In some non-limiting examples, at least one signal exchange unit 303 may be positioned substantially in the center of the lateral plane of the display panel 300.

[0631] In some non-limiting examples, at least one display unit 307 may substantially surround at least one signal switching unit 303 (including, but not limited to, surrounding it together with at least one other display unit 307).

[0632] In some non-limiting examples, at least one signal exchange unit 303 may be positioned and configured close to the edge such that at least one display unit 307 does not completely surround the at least one signal exchange unit 303.

[0633] In some non-limiting examples, the pixel density of at least one light-emitting area 210 of at least one signal-switching unit 303 may be substantially the same as the pixel density of at least one light-emitting area 210 of at least one display unit 307 in at least an area substantially adjacent to the signal-switching unit 303. In some non-limiting examples, the pixel density of the display panel 300 may be substantially uniform across it. In at least some applications, there may be scenarios that require at least one signal-switching unit 303 and at least one display unit 307 to have substantially the same pixel density, thereby the resolution of the display panel 300 may be substantially the same across both the signal-switching unit 303 and at least one display unit 307, but this is not limited to this.

[0634] Those skilled in the art may have a scenario requiring that the layout of (sub)pixels 1015 / 216 in the signal switching section 303 of the display panel 300 be somewhat similar to its layout in the display section 307 of the display panel 300, including but not limited to the size, shape, (color) order, and configuration of the (sub)pixels 1015 / 216, and will understand that the spacing ("pitch") between adjacent (sub)pixels 1015 / 216 in the signal switching section 303 is the same as, or an integer multiple of, its pitch in the display section 307.

[0635] Nevertheless, the examples in this disclosure may be applicable in scenarios where the layout of (sub)pixels 1015 / 216 in the signal switching unit 303 may differ substantially from that of the display unit 307 of the display panel 300.

[0636] In some non-limiting examples, the pixel density of the signal switching unit 303 of the display panel 300 may be less than or equal to the pixel density of the display unit 307 of the display panel 300.

[0637] In some non-limiting examples, at least one of the size, shape, configuration, and pitch of (sub)pixels 1015 / 216 in the signal switching section 303 of the display panel 300 may be substantially identical to the size, shape, configuration, and pitch of (sub)pixels 1015 / 216 in the display section 307 of the display panel 300, although the number of such (sub)pixels 1015 / 216 may be reduced in the signal switching section 303 of the display panel 300. In such scenarios, in some non-limiting examples, a common FMM can be used to pattern at least the (sub)pixels 1015 / 216 in both the signal switching section 303 and the display section 307, thereby reducing manufacturing costs and complexity. In such scenarios, in some non-limiting examples, apertures in the FMM corresponding to (omitted) (sub)pixels 1015 / 216 that are not present in the signal switching unit 303 may be covered (blocked) in such a way that, when used with the signal switching unit 303, substantially prevents the formation of at least one (sub)pixel 1015 / 216.

[0638] In some non-limiting examples, at least one signal-transmitting region 212 may be formed in a region where the formation of such at least one (sub)pixel 415 / 216 is substantially prevented in the signal-switching unit 303.

[0639] In some non-limiting examples, the display panel 300 may further include at least one transition region (not shown) between at least one signal exchange unit 303 and at least one display unit 307, and the configuration of at least one of the light-emitting region 210 and the signal-transmitting region 212 therein may differ from the configuration of at least one of the signal exchange unit 303 and at least one display unit 307. In some non-limiting examples, such a transition region may be omitted so that the light-emitting region 210 is provided in a substantially continuous repeating pattern across the signal exchange unit 303 and at least one display unit 307.

[0640] In some non-limiting examples, at least one signal exchange unit 303 may have a polygonal contour that includes, but is not limited to, at least one of substantially square and rectangular configurations.

[0641] In some non-limiting examples, at least one signal exchange unit 303 may have a curved contour, which includes, but is not limited to, at least one of substantially circular, oval, and elliptical configurations.

[0642] In some non-limiting examples, multiple signal transmission regions 212 within at least one signal exchange unit 303 may be configured to allow EM signals having wavelengths (ranges) corresponding to the IR spectrum to pass through their entire cross-section.

[0643] In some non-limiting examples, at least one signal switching unit 303 may have a reduced number of backplane components, or may be substantially devoid of backplane components. The backplane components include, but are not limited to, metal trace lines, capacitors, and other light-absorbing elements, including, but not limited to, opaque elements, and include, but are not limited to, TFT structures 206, whose presence may otherwise interfere with the capture of EM signals by at least one under-display component 330 (including, but not limited to, the capture of images by a camera).

[0644] In some non-limiting examples, user device 310 transmits at least one EM signal 331 t At least one transmitter 330 for transmitting outward from surface 301 through at least one first signal transmission area 212 within the first signal exchange unit 303 (in some non-limiting examples, through at least one first signal transmission area 212 substantially corresponding to the first signal exchange unit 303) t It may accommodate. In some non-limiting examples, user device 310 receives at least one EM signal 331 tto receive from outside surface 301 through at least one second signal transmission region 212 within the second signal exchange unit 303 (in some non-limiting examples, through at least one second signal transmission region 212 substantially corresponding to the second signal exchange unit 303) at least one receiver 330 t It may accommodate at least one received EM signal 331. r This includes, but is not limited to, the transmission of at least one EM signal 331 for its biometric authentication, which is reflected from an external surface including, but not limited to, user 30. t It may be identical to that.

[0645] In some non-limiting examples, at least one transmitter 330 t and at least one receiver 330 t At least one of these may be located behind the corresponding at least one signal switching unit 303, so that EM signals, including but not limited to IR signals, can be transmitted and received, respectively, by passing through the at least one signal switching unit 303 of the display panel 300. In some non-limiting examples, at least one transmitter 330 t and at least one receiver 330 r Both may be located behind a single signal exchange unit 303, and in some non-limiting examples, they may be elongated along at least one configuration axis, thereby connecting at least one transmitter 330 t and at least one receiver 330 r It extends across both.

[0646] In some non-limiting examples, the display panel 300 may further include a non-display portion (not shown) which, in some non-limiting examples, may substantially lack any light-emitting area 210. In some non-limiting examples, the user device 310 may house at least one of an under-display component 330 including, but not limited to, a camera, and a non-under-display component including, but not limited to, a punch-hole camera, the non-under-display component may, in some non-limiting examples, be provided in at least one of a cutout in the panel 300 and its bezel located within the non-display portion.

[0647] In some non-specific examples, the hidden portion is transmitter 330 t and receiver 330 r They may be positioned adjacent to (and in some non-limiting examples between) multiple signal exchange sections 303 corresponding to multiple sub-display components 330, including but not limited to, the above.

[0648] In some non-limiting examples, the non-display portion may include a through-hole portion (not shown) which may be positioned to overlap at least one of the under-display and non-under-display components. In some non-limiting examples, the display panel 300 may substantially lack at least one of the layers, coatings, and components that may otherwise be present in at least one of the at least one of the signal exchange portion 303 and at least one display portion 307 (including, but not limited to, at least one of the backplane 202 and the frontplane 201), the presence of which may otherwise interfere with at least one of the transmission of EM signals through the panel 300 and the capture of EM signals by at least one of the under-display and non-under-display components (including, but not limited to, the capture of images by a camera). In some non-limiting examples, the polarizer of the display panel 300 and the upper layer 170, which includes but is not limited to at least one of the cover glass and / or glass cap, may substantially extend over at least one signal-exchanging portion 303, at least one display portion 307, and non-display portions, so as to extend substantially over the display panel 300. In some non-limiting examples, through-hole portions may substantially lack polarizers to enhance the transmission of light passing through them.

[0649] In some non-limiting examples, the non-display portion may include a non-through-hole portion, and in some non-limiting examples, the non-through-hole portion may be located between the through-hole portion and the laterally adjacent signal exchange portion 303. In some non-limiting examples, the non-through-hole portion may surround at least a portion of the periphery of the through-hole portion. In some non-limiting examples, the user device 310 may include at least one of additional modules, components, and sensors in the portion of the user device 310 corresponding to the non-through-hole portion of the display panel 300.

[0650] In some non-limiting examples, the light-emitting region 210 within at least one signal-exchanging unit 303 may be electrically coupled to at least one TFT structure located within a non-through-hole portion of a non-display unit. That is, in some non-limiting examples, the TFT structure 206 for operating the (sub)pixels 1015 / 216 within at least one signal-exchanging unit 303 may be relocated outside the at least one signal-exchanging unit 303 and within a non-through-hole portion of the display panel 300, thereby allowing substantially high light transmission in at least one of the IR and NIR spectra to be directed through the non-light-emitting region 211 within at least one signal-exchanging unit 303. In some non-limiting examples, the TFT structure 206 within a non-through-hole portion may be electrically coupled to the (sub)pixels 1015 / 216 within at least one signal-exchanging unit 303 via a conductive trace. In some non-limiting examples, transmitter 330 t and receiver 330 r At least one of these is positioned laterally in close proximity to the non-through-hole portion so that the distance the current travels between the TFT structure 206 and its associated subpixels 1015 / 216 can be reduced.

[0651] Luminous region In some non-limiting examples, including cases where the OLED device 200 includes a display module, the lateral surface of the device 200 may be subdivided into multiple light-emitting regions 210 of the device 200, and the longitudinal surface of the device 200 structure within each of the light-emitting regions 210 may emit light when energized.

[0652] In some non-limiting examples, individual light-emitting regions 210 may have a pair of associated electrodes 220, 240, one of which may function as an anode and the other as a cathode, and may have at least one semiconductor layer 230 between them. Such a light-emitting region 210 can emit light in a given wavelength spectrum and may correspond to one of the pixels 1015 and its subpixels 216. In some non-limiting examples, multiple subpixels 216, each corresponding to and emitting light of a different wavelength (range), may collectively form a pixel 1015.

[0653] In some non-limiting examples, wavelength spectra may correspond, but not necessarily, to colors in the visible spectrum. Light of a first wavelength (range) emitted by the first subpixel 216 of pixel 1015 may function differently from light of a second wavelength (range) emitted by its second subpixel 216 due to the different wavelengths (ranges) it contains.

[0654] In some non-limiting examples, the active region 208 of an individual light-emitting region 210 may be defined such that, in the longitudinal direction, it is bounded by the first electrode 220 and the second electrode 240, and in the lateral direction, it is confined to a light-emitting region 210 defined by the presence of each of the first electrode 220, the second electrode 240, and at least one semiconductor layer 230 between them ("light-emitting region layer"), i.e., the first electrode 220, the second electrode 240, and at least one semiconductor layer 230 between them overlap in the lateral direction.

[0655] Those skilled in the art will understand that the lateral surfaces of the light-emitting region 210, and therefore the lateral boundaries of the active region 208, may not correspond to the entire lateral surface of at least one of the first electrode 220 and the second electrode 240. Rather, the lateral surfaces of the light-emitting region 210 may substantially be less than or equal to the lateral range of either the first electrode 220 or the second electrode 240. In some non-limiting examples, at least one of the following is true: a portion of the first electrode 220 may be covered by the PDL 209, and a portion of the second electrode 240 may not be disposed on at least one semiconductor layer 230, resulting in one or more scenarios where the light-emitting region 210 may be constrained laterally.

[0656] In some non-limiting examples, at least one of the various luminescent region layers may be deposited by the deposition of the corresponding constituent luminescent region layer material.

[0657] In some non-limiting examples, some of at least one semiconductor layer 230 may be laid out in a desired pattern by depositing the corresponding light-emitting region layer material through a fine metal mask (FMM) having openings corresponding to desired locations where the light-emitting region layer material is deposited. In some non-limiting examples, multiple light-emitting region layers may be laid out in a similar pattern by depositing their respective light-emitting region layer material in their respective deposition stages using an FMM (including, but not limited to, such methods).

[0658] In some non-limiting examples, as described herein, the light-emitting region layer material corresponding to at least one of the first electrode 220 and the second electrode 240 (including but not limited to the second electrode 240) may be deposited by pre-depositing the patterning film 110 by depositing the patterning material through an FMM having openings corresponding to desired locations where the patterning film 110 is deposited, and then depositing the light-emitting region layer material using one of the open-mask and mask-free deposition processes.

[0659] In some non-limiting examples, the patterning film 110 may be adapted to influence the tendency of the vapor flux 532 of the deposited material 531 deposited thereon (which may constitute the light-emitting region layer material), including but not limited to an initial adhesion probability for the deposition of the deposited material 531 that is less than or equal to the initial adhesion probability for the deposition of the deposited material 531 on the exposed layer surface 11 of at least one semiconductor layer 230.

[0660] In some non-limiting examples, the first electrode 220 may be disposed on the exposed layer surface 11 of the device 200, and in some non-limiting examples, it may be disposed within at least a portion of the lateral surface of the light-emitting region 210. In some non-limiting examples, within the lateral surface of the light-emitting region 210 of at least (sub)pixels 1015 / 216, the exposed layer surface 11 may include a TFT insulating layer 207 of various TFT structures 206 that constitute a driving circuit for the light-emitting region 210 corresponding to a single display (sub)pixel 1015 / 216 when the first electrode 220 is deposited.

[0661] In some non-limiting examples, the TFT insulating layer 207 may be formed with openings extending therethrough, allowing the first electrode 220 to be electrically coupled to TFT electrodes, including but not limited to the TFT drain electrode.

[0662] Those skilled in the art will understand that the drive circuit may include multiple TFT structures 206. In Figure 2, for the sake of simplicity, only one TFT structure 206 may be shown, but those skilled in the art will understand that such a TFT structure 206 may represent at least one of the multiple components that constitute the drive circuit, and at least one of those components.

[0663] In some non-limiting examples, the tip of the first electrode 220 may be covered by at least one PDL 209 such that a portion of at least one PDL 209 may be interposed between the first electrode 220 and at least one semiconductor layer 230, and as a result, such tip of the first electrode 220 may be located beyond the active region 208 of the associated light-emitting region 210.

[0664] In some non-limiting examples, at least one semiconductor layer 230 (including, but not limited to, at least one of layers 231, 233, 235, 237, and 239) may be deposited on the exposed layer surface 11 of the device 200, including at least a portion of the lateral surface of such light-emitting region 210 of the (sub)pixel 1015 / 216. In some non-limiting examples, at least within the lateral surface of the light-emitting region 210 of the (sub)pixel 1015 / 216, such exposed layer surface 11 may include a first electrode 220 when the at least one semiconductor layer 230 is deposited.

[0665] In some non-limiting examples, at least one semiconductor layer 230 may extend beyond the lateral surface of the light-emitting region 210 of the (sub)pixel 1015 / 216 and at least partially into the lateral surface of the surrounding non-light-emitting region 211. In some non-limiting examples, such exposed layer surface 11 of such surrounding non-light-emitting region 211 may include PDL 209 when at least one semiconductor layer 230 is deposited.

[0666] In some non-limiting examples, the second electrode 240 may be located on the exposed layer surface 11 of the device 200, including at least a portion of the lateral surface of the light-emitting region 210 of the (sub)pixel 1015 / 216. In some non-limiting examples, such exposed layer surface 11 may include at least one semiconductor layer 230 at the time of deposition of the second electrode 220, at least within the lateral surface of the light-emitting region 210 of the (sub)pixel 1015 / 216.

[0667] In some non-limiting examples, the second electrode 240 may also extend beyond the lateral surfaces of the light-emitting regions 210 of the (sub) pixels 1015 / 216 and, at least partially, into the lateral surfaces of the surrounding non-light-emitting regions 211. In some non-limiting examples, the exposed layer surface 11 of such surrounding non-light-emitting regions 211 may include the PDL 209 during the deposition of the second electrode 240.

[0668] In some non-limiting examples, the second electrode 240 may extend over a substantially portion (including but not limited to substantially all) of the lateral surface of the surrounding non-luminescent region 211.

[0669] In some non-limiting examples, individual light-emitting regions 210 of the device 200 may be laid out in a lateral pattern. In some non-limiting examples, the pattern may extend along a first lateral direction. In some non-limiting examples, the pattern may also extend along a second lateral direction, and in some non-limiting examples, it may extend at an angle with respect to the first lateral direction. In some non-limiting examples, the second lateral direction may be substantially perpendicular to the first lateral direction. In some non-limiting examples, the pattern may have several elements within such a pattern, each element being characterized by at least one feature including, but not limited to, at least one of the following: the wavelength of light emitted by its light-emitting region 210, the shape of such light-emitting region 210, dimensions (along at least one of the first and second lateral directions), orientation (with respect to at least one of the first and second lateral directions), and spacing (with respect to at least one of the first and second lateral directions) from a preceding element in the pattern. In some non-restrictive examples, the pattern may be repeated in at least one of the first and second horizontal directions.

[0670] In some non-limiting examples, each individual light-emitting region 210 of device 200 may be associated with and driven by a corresponding drive circuit in the backplane 202 of device 200 to drive an OLED structure for the associated light-emitting region 210. In some non-limiting examples, including but not limited to cases where the light-emitting regions 210 may be laid out in a regular pattern extending in both a first (row) lateral direction and a second (column) lateral direction, there may be signal lines in the backplane 202 corresponding to each row of the light-emitting region 210 extending in the first lateral direction, and signal lines corresponding to each column of the light-emitting region 210 extending in the second lateral direction. In such a non-limiting configuration, signals on row selection lines can energize the respective gates of the electrically coupled switching TFT structure 206, and signals on data lines can energize the respective sources of the electrically coupled switching TFT structure 206, thereby enabling the signals on row selection line / data line pairs to be electrically coupled by the positive terminal of the power supply to energize the anode of the OLED structure of the light-emitting region 210 associated with such pairs, causing it to emit photons, the cathode of which is electrically coupled to the negative terminal of the power supply 204.

[0671] In some non-limiting examples, a single display pixel 1015 may contain three subpixels 216, which in some non-limiting examples may be the R (red) subpixel 216. R G (green) subpixel 216 G , and B (blue) subpixel 216 B Each of the three colors may correspond to a single subpixel 216, each containing at least one of the following colors. In some non-limiting examples, a single display pixel 1015 may contain four subpixels 216, each subpixel being an R (red) subpixel 216. R and B (blue) subpixel 216 B A single subpixel 216 of each of the two colors, including but not limited to, and a G (green) subpixel 216 GEach corresponds to two subpixels 216 of a third color, including but not limited to these. In some non-limiting examples, a single display pixel 1015 may contain four subpixels 216, these of which, in some non-limiting examples, are R (red) subpixels 216. R G (green) subpixel 216 G , and B (blue) subpixel 216 B Each of the three colors and the fourth W (white) subpixel 216 includes at least one of the following: W Each of the 216 single subpixels may correspond to a single subpixel.

[0672] In some non-limiting examples, the emission spectrum of light emitted by a given (sub)pixel 10¹⁵ / 2¹⁶ may correspond to the colors that the (sub)pixel 10¹⁵ / 2¹⁶ may display. In some non-limiting examples, the wavelength of light may not correspond to such colors, but by methods obvious to those skilled in the art, further processing can be performed to convert the wavelength to such a corresponding wavelength.

[0673] In some non-limiting examples, the emission spectrum of light emitted by a given (sub)pixel 10¹⁵ / 2¹⁶, corresponding to the color that the (sub)pixel 10¹⁵ / 2¹⁶ can exhibit, may be related to at least one of the structure and composition of at least one semiconductor layer 230 extending between the first electrode 220 and the second electrode 240, which includes but is not limited to at least one EML 235. In some non-limiting examples, at least one EML 235 of the at least one semiconductor layer 230 may be tuned to facilitate the emission of light having an emission spectrum corresponding to the color that the (sub)pixel 10¹⁵ / 2¹⁶ can exhibit. In some non-limiting examples, R (red) subpixel 2¹⁶ R EML235 may include, but is not limited to, R(red)EML material doped with R(red) emitter material. In some non-limiting examples, G(green) subpixel 216 GEML235 may include, but is not limited to, a G(green)EML material containing a host material doped with a G(green) emitter material. In some non-limiting examples, B(blue) subpixel 216 B The EML235 may include, but is not limited to, a B(blue)EML material that includes a host material doped with a B(blue) emitter material.

[0674] In some non-limiting examples, at least one property (including but not limited to its presence, absence, thickness, composition, and order) of at least one semiconductor layer 230 in the longitudinal plane, including but not limited to HIL231, HTL233, EML235, ETL237, and EIL239, may be selected to facilitate the emission of light from there having a wavelength spectrum corresponding to a color that can represent a given subpixel 216, including but not limited to at least one of R (red), G (green), and B (blue).

[0675] In some non-limiting examples, the emission of light having wavelength spectra corresponding to multiple colors selected from R (red), G (green), and B (blue) may, according to additive colorimetric methods, facilitate the emission of light having wavelength spectra corresponding to different colors, including but not limited to W (white) (R+G+B), Y (yellow) (R+G), C (cyan) (G+B), and M (magenta) (B+R).

[0676] In some non-limiting examples, the exposed layer surface 11 of the device 100 may be exposed to a vapor flux 532 of the deposited material 531, including but not limited to one of an open-mask deposition process and a mask-free deposition process.

[0677] In some non-limiting examples, at least one semiconductor layer 230 may be deposited on the exposed layer surface 11 of the device 200, which includes a first electrode 220, in at least a portion of the light-emitting region 210.

[0678] In some non-limiting examples, the exposed layer surface 11 of the device 200, which may include at least one semiconductor layer 230, may be exposed to evaporated flux 412 of patterning material 411 using a shadow mask 415, but not limited to, in order to form a patterning film 110 on a first portion 101. Whether or not a shadow mask 415 is employed, the patterning film 110 may be substantially limited to a signal-transmitting region 212 on its lateral side.

[0679] In some non-limiting examples, the lateral surface of at least one light-emitting region 210 may extend across and include at least one associated TFT structure 206 to drive the light-emitting region 210 along data lines and scan lines (not shown), and in some non-limiting examples, may be formed from at least one of Cu and TCO.

[0680] In some non-limiting examples, (sub)pixels 1015 / 216 may be arranged in a contiguous order. In some non-limiting examples, the (color) order of subpixels 216 of the first pixel 1015 may be the same as the (color) order of subpixels 216 of the second pixel 1015. In some non-limiting examples, the (color) order of subpixels 216 of the first pixel 1015 may be different from the (color) order of subpixels 216 of the second pixel 1015.

[0681] In some non-limiting examples, a subpixel 216 of an adjacent pixel 1015 may be aligned to at least one of row, column, and array arrangements.

[0682] In some non-limiting examples, at least one of the first rows and columns of aligned subpixels 216 of adjacent pixels 1015 may contain one (sub)pixel 216 of the same color and one of different colors.

[0683] In some non-limiting examples, at least one of the first rows and columns of the aligned subpixel 216 of an adjacent pixel 1015 may be aligned with at least one of the second and third rows and columns of the adjacent aligned subpixel 216 of the adjacent pixel 1015.

[0684] In some non-limiting examples, at least one of the first rows and columns of the aligned subpixel 216 of adjacent pixel 1015 may be offset and misaligned with at least one of the second and third rows and columns of the aligned subpixel 216 of adjacent pixel 1015.

[0685] In some non-limiting examples, subpixels 216 of at least one adjacent pixel 1015 of the first, second, and third in at least one row and column may be arranged such that each corresponding subpixel 216 of the first, second, and third in at least one row and column may be the same color.

[0686] In some non-limiting examples, the subpixels 216 of adjacent pixels 1015 in at least one of the first, second, and third rows and columns may be arranged such that each corresponding subpixel 216 of the first, second, and third rows and columns may be of a different color.

[0687] In some non-limiting examples, in at least one signal-transparent region 212 in at least one signal-exchanging section 303 of the display panel 300, at least one signal-transparent region 212 may be located between a plurality of light-emitting regions 210. In some non-limiting examples, at least one signal-transparent region 212 may be located between adjacent (sub)pixels 1015 / 216. In some non-limiting examples, adjacent subpixels 216 surrounding at least one signal-transparent region 212 may form part of the same pixel 1015. In some non-limiting examples, adjacent subpixels 216 surrounding at least one signal-transparent region 212 may be associated with different pixels 1015.

[0688] In some non-limiting examples, a region substantially lacking a sealing film 140 of the second electrode material ("...

Claims

1. A layered semiconductor device comprising a mixed ligand compound including a cyclophosphazene core portion, a first ligand portion, and a second ligand portion, wherein the first ligand portion and the second ligand portion are each bonded to the core portion.

2. The device according to claim 1, wherein at least one of the first ligand portion and the second ligand portion is a fluorine (F)-containing portion.

3. Each of the first ligand portion and the second ligand portion independently comprises F, chlorine (Cl), hydroxyl group, substituted alkyl group, unsubstituted alkyl group, substituted fluoroalkyl group, unsubstituted fluoroalkyl group, substituted cycloalkyl group, unsubstituted cycloalkyl group, substituted fluorocycloalkyl group, unsubstituted fluorocycloalkyl group, substituted heterocycloalkyl group, unsubstituted heterocycloalkyl group, substituted fluoroheterocycloalkyl group, unsubstituted fluoroheterocycloalkyl group, substituted alkoxy group, unsubstituted alkoxy group, substituted fluoroalkoxy group, unsubstituted fluoroalkoxy group, substituted aryloxy group, unsubstituted aryloxy group, substituted fluoroaryloxy group, unsubstituted fluoroaryloxy group, substituted hetero The device according to any one of claims 1 and 2, comprising at least one of a reeloxy group, an unsubstituted heteroaryloxy group, a substituted fluoroheteroaryloxy group, an unsubstituted fluoroheteroaryloxy group, a substituted aryl group, an unsubstituted aryl group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a pentafluorosulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a trifluoromethylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group.

4. Each of the first ligand portion and the second ligand portion is a linker portion R Ｂ , terminal part R Ｔ , and the linker portion R Ｂ and the end portion R Ｔ Intermediate part R positioned between them Ｄ The device according to any one of claims 1 and 2, including the device described in either claim 1 or 2.

5. Each of the first ligand portion and the second ligand portion is independently expressed in formula (E-1): 【Chemistry 1】 (In the formula, ＊ This indicates the binding point to the cyclophosphazene core portion, R Ｂ This represents the linker portion, R Ｄ represents the aforementioned intermediate portion, and R Ｔ represents the terminal portion.) The device according to claim 4, as represented by [the specified symbol].

6. R Ｂ The device according to any one of claims 4 and 5, wherein the device comprises one of oxygen (O), nitrogen (N), sulfur (S), substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted arylene, unsubstituted arylene, substituted heteroarylene, and unsubstituted heteroarylene.

7. R Ｂ These are -O- and -O-CH ２ A device according to any one of claims 4 to 6, selected from the following.

8. R Ｄ The device according to any one of claims 4 to 7, comprising at least one of O, ether, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted arylene, unsubstituted arylene, substituted phenyl, unsubstituted phenyl, substituted biphenyl, unsubstituted biphenyl, substituted binaphthalene, unsubstituted binaphthalene, substituted heteroarylene, and unsubstituted heteroarylene.

9. R Ｄ Equation (EB-1): 【Chemistry 2】 (In the formula, X is independently H, D, F, and CF ３ It is one of them a is an integer between 0 and 6. b is an integer between 0 and 12. The sum of a and b is 1 or greater. A device according to any one of claims 4 to 8, as represented by the following:

10. R Ｔ The device according to any one of claims 4 to 9, comprising at least one of substituted alkyl, unsubstituted alkyl, branched fluoroalkyl, unbranched fluoroalkyl, substituted heterocycloalkyl, unsubstituted heterocycloalkyl, substituted alkoxy, unsubstituted alkoxy, branched silyloxy, unbranched silyloxy, branched fluoroalkoxy, unbranched fluoroalkoxy, fluoroaryl, polyfluorosulfanyl, and fluorocycloalkyl.

11. R Ｔ F, H, CF ２ H, CF ３ OCF ３ CF ２ CF ３ CF ２ CF ２ H, CH ２ CF ２ H and CH ２ CF ３ The device according to any one of claims 4 to 10, comprising at least one of the following.

12. The device according to any one of claims 1 to 11, wherein the first ligand portion and the second ligand portion independently comprise at least one of a fluoroalkyl portion and a fluoroaryl portion.

13. The first ligand portion is given by equation (FCM-1): 【Transformation 3】 (In the formula, t is an integer between 1 and 3. u is an integer between 5 and 12. Z represents at least one of H, D, and F. A device according to any one of claims 1 to 12, as represented by the following:

14. The second ligand portion is given by equation (FCM-2): 【Chemistry 4】 (In the formula, v is an integer between 1 and 3, w is an integer between 3 and 15. Z represents at least one of H, D, and F. The device according to any one of claims 1 to 13, as represented by the following:

15. The device according to any one of claims 1 to 14, wherein the mixed ligand compound comprises a plurality of at least one of the first ligand portion and the second ligand portion.

16. The device according to any one of claims 1 to 15, wherein the number of second ligand portions in the mixed ligand compound is less than or equal to the number of first ligand portions therein.

17. The device according to any one of claims 1 to 16, wherein the number of F atoms in the first ligand portion and the second ligand portion differs by only one of the following: 2 or less, 4 or less, 6 or less, 8 or less, 9 or less, 11 or less, 13 or less, 15 or less, 16 or less, 18 or less, 20 or less, 24 or less, and 48 or less.

18. CF of the first ligand portion and the second ligand portion ２ The device according to any one of claims 1 to 17, wherein the number of parts differs by only 1 or less, 2 or less, 3 or less, 4 or less, 5 or less, 6 or less, 7 or less, 8 or less, 9 or less, 10 or less, 11 or less, and 22 or less.

19. The device according to any one of claims 1 to 18, wherein the number of C atoms in the first ligand portion and the second ligand portion differs by only one of 1 or less, 2 or less, 3 or less, 4 or less, 5 or less, 6 or less, 7 or less, 8 or less, 9 or less, 10 or less, 11 or less, and 22 or less.

20. The device according to any one of claims 1 to 19, wherein the molar mass attributable to the first ligand portion and the second ligand portion differs by only one of the following: about 20 g / mol or less, about 40 g / mol or less, about 50 g / mol or less, about 100 g / mol or less, about 150 g / mol or less, about 200 g / mol or less, about 300 g / mol or less, about 400 g / mol or less, about 500 g / mol or less, about 600 g / mol or less, about 700 g / mol or less, about 800 g / mol or less, about 900 g / mol or less, and about 1,100 g / mol or less.

21. The device according to any one of claims 1 to 20, wherein the molar mass attributable to the first ligand portion and the second ligand portion differs by only one of the following: about 20 g / mol or less, about 40 g / mol or less, about 50 g / mol or less, about 100 g / mol or less, about 150 g / mol or less, about 200 g / mol or less, about 300 g / mol or less, about 400 g / mol or less, about 500 g / mol or less, about 600 g / mol or less, about 700 g / mol or less, about 800 g / mol or less, about 900 g / mol or less, and about 1,100 g / mol or less.

22. The device according to any one of claims 1 to 21, wherein the degree of fluorination of the first ligand portion and the second ligand portion differs by only one of the following: about 0.03 or less, about 0.09 or less, about 0.14 or less, about 0.18 or less, about 0.22 or less, about 0.28 or less, about 0.36 or less, about 0.56 or less, about 0.71 or less, about 0.78 or less, about 0.82 or less, about 0.99 or less, about 1.56 or less, about 1.64 or less, about 1.78 or less, about 1.85 or less, about 1.98 or less, about 2.34 or less, about 3.56 or less, about 3.64 or less, and about 3.70 or less.

23. The device according to any one of claims 1 to 22, comprising a composition containing a plurality of compounds, wherein at least one of the plurality of compounds is the mixed ligand compound, and the plurality of compounds commonly contain at least one ligand portion.

24. The device according to claim 23, wherein at least one of the plurality of compounds comprises the at least one first ligand portion of the mixed ligand compound.

25. The device according to claim 24, wherein the number of at least one other first ligand portion among the plurality of compounds is equal to the sum of the number of first ligand portions and the number of second ligand portions of the mixed ligand compound.

26. The device according to any one of claims 24 and 25, wherein the at least one ligand portion among the plurality of compounds is substantially composed of the first ligand portion.

27. The device according to any one of claims 1 to 26, wherein the mixed ligand compound comprises one second ligand portion, and the remainder of the ligand portion of the mixed ligand compound is substantially composed of the first ligand portion.

28. The device according to claim 27, wherein the majority of the composition is substantially composed of the mixed ligand compound, and the remainder of the composition is substantially composed of at least one of the plurality of compounds.

29. The device according to any one of claims 27 and 28, wherein the mixed ligand compound constitutes one of about 50%, about 60%, about 70%, about 75%, about 80%, about 85%, about 90%, about 95%, about 98%, and 99% of the composition.

30. The device according to any one of claims 1 to 27, wherein the mixed ligand compound comprises the first ligand portion and the second ligand portion in a ratio of approximately 1:1 in terms of the number of ligand portions in the compound.

31. The device according to claim 30, wherein at least one of the plurality of compounds comprises the first ligand portion and the second ligand portion in a ratio of the number of ligand portions contained in such compound, one of at least about 1:2, at least about 2:1, at least about 1:5, and at least about 5:

1.

32. The device according to any one of claims 30 and 31, wherein the proportion of the composition being the mixed ligand compound is equal to or greater than the proportion of any other compound in the composition.

33. The difference in molar mass of each of the plurality of compounds in the composition is approximately 4,300 g / mol or less, approximately 4,000 g / mol or less, approximately 3,700 g / mol or less, approximately 3,500 g / mol or less, approximately 3,100 g / mol or less, approximately 2,800 g / mol or less, approximately 2,400 g / mol or less, approximately 2,200 g / mol or less, approximately 1,800 g / mol or less, approximately 1,400 g / mol or less, and approximately 1,200 g / mol or less. The device according to any one of claims 23 to 32, wherein the amount is one of 0 g / mol or less, about 900 g / mol or less, about 800 g / mol or less, about 700 g / mol or less, about 600 g / mol or less, about 500 g / mol or less, about 400 g / mol or less, about 300 g / mol or less, about 200 g / mol or less, about 100 g / mol or less, about 40 g / mol or less, and about 20 g / mol or less.

34. The device according to any one of claims 23 to 33, wherein the polydispersity of the composition is one of about 2.08 or less, about 2.06 or less, about 2.04 or less, about 2.02 or less, and about 2.00 or less.

35. The device according to any one of claims 23 to 34, wherein the plurality of compounds in the composition each exhibit substantially the same vapor pressure.

36. The device according to any one of claims 23 to 35, wherein at least one of the plurality of compounds comprises a first ligand moiety including a fluoroalkyl moiety and a second ligand moiety including at least one of a substituted alkyl moiety, an unsubstituted alkyl moiety, a substituted fluoroalkyl moiety, an unsubstituted fluoroalkyl moiety, a substituted fluoroaryl moiety, an unsubstituted fluoroaryl moiety, a substituted aryl moiety, an unsubstituted aryl moiety, a substituted polycyclic aromatic moiety, an unsubstituted polycyclic aromatic moiety, a substituted binaphthyl moiety, an unsubstituted binaphthyl moiety, a substituted biphenyl moiety, an unsubstituted biphenyl moiety, a substituted adamantyl moiety, and an unsubstituted adamantyl moiety.

37. The device according to any one of claims 23 to 36, wherein the core portion of each of the plurality of compounds is a cyclophosphazene portion.

38. A patterning coating comprising the mixed ligand compound, wherein the patterning coating is disposed on the first layer surface of the underlying layer in a first portion of its lateral side, The second part further comprises a sedimentary layer made of sedimentary material, The device according to any one of claims 1 to 37, wherein the first portion substantially lacks a sealing coating of the deposited material.

39. The device according to claim 38, wherein the patterning coating is adapted to reduce the initial adhesion probability of vapor flux of a conductive deposit material.

40. circuit board and A first electrode and a second electrode, The present invention further comprises a light-emitting region comprising at least one semiconductor layer disposed between the first electrode and the second electrode, The device according to any one of claims 1 to 39, wherein the first electrode is disposed between the substrate and the at least one semiconductor layer.

41. The device according to claim 38, wherein the first portion excludes the lateral surface of the light-emitting region.

42. The device according to claim 40, wherein the second electrode includes at least a portion of the deposited layer as its layer.

43. The device according to claim 38, wherein the first portion includes a lateral surface of the light-emitting region.

44. The device according to claim 38, further comprising an auxiliary electrode including the aforementioned deposited layer as the layer.

45. A composition comprising a plurality of compounds, each of which comprises a cyclophosphazene core portion and at least one ligand portion bonded to the cyclophosphazene core portion, wherein the plurality of compounds all contain at least one ligand portion in common.

46. The composition according to claim 45, wherein at least one of the plurality of compounds comprises a plurality of at least one of the first ligand moieties and the second ligand moieties.

47. The composition according to claim 45 or 46, comprising a first compound comprising at least one first ligand portion and at least one second ligand portion, and a second compound comprising the at least one first ligand portion of the first compound.

48. The composition according to any one of claims 45 to 47, wherein at least one compound of the composition includes a ligand moiety that is not present in the other compound of the composition.

49. The composition according to claim 47 or 48, wherein the number of first ligand portions of the second compound is equal to the sum of the number of first ligand portions and the number of second ligand portions of the first compound.

50. The composition according to any one of claims 47 to 49, wherein the number of second ligand portions in at least one of the first compound and the second compound is less than or equal to the number of first ligand portions in it.

51. The composition according to any one of claims 47 to 50, wherein the ligand portion of the first compound is substantially composed of the first ligand portion and the second ligand portion.

52. The composition according to any one of claims 47 to 51, wherein the ligand portion of the second compound is substantially composed of the first ligand portion.

53. The composition according to any one of claims 47 to 52, wherein the first compound comprises one second ligand portion, and the remainder of the ligand portion of the first compound is substantially composed of the first ligand portion.

54. The composition according to any one of claims 47 to 53, wherein the majority of the composition is substantially composed of the first compound, and the remainder of the composition is substantially composed of the second compound.

55. The composition according to any one of claims 47 to 54, wherein the first compound constitutes one of about 50%, about 60%, about 70%, about 75%, about 80%, about 85%, about 90%, about 95%, about 98%, and 99% of the composition.

56. The composition according to claim 46 or 47, wherein each of the plurality of compounds comprises a first ligand moiety and a second ligand moiety.

57. The composition according to any one of claims 47 to 56, wherein the first compound comprises the first ligand portion and the second ligand portion in a ratio of approximately 1:1 in terms of the number of ligand portions in the compound.

58. The composition according to any one of claims 47 to 57, wherein the composition comprises at least one additional compound, the compound comprising the first ligand portion and the second ligand portion in a ratio of about 1:2, about 2:1, about 1:5, and about 5:1, in terms of the number of ligand portions composed of the compound.

59. The composition according to any one of claims 47 to 58, wherein the proportion of the composition which is the first compound is greater than or equal to the proportion of any other compound in the composition.

60. The difference in molar mass of each of the plurality of compounds in the composition is approximately 4,300 g / mol or less, approximately 4,000 g / mol or less, approximately 3,700 g / mol or less, approximately 3,500 g / mol or less, approximately 3,100 g / mol or less, approximately 2,800 g / mol or less, approximately 2,400 g / mol or less, approximately 2,200 g / mol or less, approximately 1,800 g / mol or less, approximately 1,400 g / mol or less, and approximately 1,200 g / mol or less. The composition according to any one of claims 45 to 59, wherein the amount is 0 g / mol or less, about 900 g / mol or less, about 800 g / mol or less, about 700 g / mol or less, about 600 g / mol or less, about 500 g / mol or less, about 400 g / mol or less, about 300 g / mol or less, about 200 g / mol or less, about 100 g / mol or less, about 40 g / mol or less, and about 20 g / mol or less.

61. The composition according to any one of claims 45 to 60, wherein the polydispersity of the composition is one of about 2.08 or less, about 2.06 or less, about 2.04 or less, about 2.02 or less, and about 2.00 or less.

62. The composition according to any one of claims 45 to 61, wherein the compounds of the composition each exhibit substantially the same vapor pressure.

63. The aforementioned at least one ligand portion is linker portion R Ｂ , terminal part R Ｔ , and linker portion R Ｂ and terminal portion R Ｔ Intermediate part R positioned between them Ｄ The composition according to claim 45, comprising:

64. The aforementioned linker portion R Ｂ The composition of claim 63, comprising one of O, N, S, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted arylene, unsubstituted arylene, substituted heteroarylene, and unsubstituted heteroarylene.

65. End part R Ｔ CF ３ CF ２ CF ２ ,CH ２ CF ２ H, and CF ２ The composition according to claim 63 or 64, which is one of H.

66. The composition according to any one of claims 45 to 65, wherein the at least one ligand portion comprises at least one of a fluoroalkyl portion and a fluoroaryl portion.

67. The composition according to any one of claims 46 to 66, wherein the first ligand portion and the second ligand portion are F-containing portions.

68. The second part mentioned above is fluorinated sp ２ A panel according to any one of claims 46 to 67, substantially lacking carbon atoms.

69. The panel according to any one of claims 46 to 68, wherein the second ligand portion substantially lacks F.

70. The composition according to any one of claims 45 to 69, wherein at least one of the plurality of compounds comprises a first ligand moiety containing a fluoroalkyl moiety and a second ligand moiety containing at least one of a substituted alkyl moiety, an unsubstituted alkyl moiety, a substituted fluoroalkyl moiety, an unsubstituted fluoroalkyl moiety, a substituted fluoroaryl moiety, an unsubstituted fluoroaryl moiety, a substituted aryl moiety, an unsubstituted aryl moiety, a substituted polycyclic aromatic moiety, an unsubstituted polycyclic aromatic moiety, a substituted binaphthyl moiety, an unsubstituted binaphthyl moiety, a substituted biphenyl moiety, an unsubstituted biphenyl moiety, a substituted adamantyl moiety, and an unsubstituted adamantyl moiety.

71. The composition according to any one of claims 46 to 70, wherein the second ligand portion contains a number of F atoms less than or equal to the number of F atoms in the first ligand portion.

72. The composition according to any one of claims 46 to 71, wherein the second ligand portion has a degree of fluorination less than or equal to the degree of fluorination of the first ligand portion.

73. The composition according to any one of claims 46 to 72, wherein the number of F atoms in the first ligand portion and the second ligand portion differs by only one of the following: 2 or less, 4 or less, 6 or less, 8 or less, 9 or less, 11 or less, 13 or less, 15 or less, 16 or less, 18 or less, 20 or less, 24 or less, and 48 or less.

74. CF of the first ligand portion and the second ligand portion ２ The composition according to any one of claims 46 to 73, wherein the number of parts differs by only one of 1 or less, 2 or less, 3 or less, 4 or less, 5 or less, 6 or less, 7 or less, 8 or less, 9 or less, 10 or less, 11 or less, and 22 or less.

75. The composition according to any one of claims 46 to 74, wherein the number of C atoms in the first ligand portion and the second ligand portion differs by only one of 1 or less, 2 or less, 3 or less, 4 or less, 5 or less, 6 or less, 7 or less, 8 or less, 9 or less, 10 or less, 11 or less, and 22 or less.

76. The composition according to any one of claims 46 to 75, wherein the molar mass attributable to the first ligand portion and the second ligand portion differs by only one of the following: about 20 g / mol or less, about 40 g / mol or less, about 50 g / mol or less, about 100 g / mol or less, about 150 g / mol or less, about 200 g / mol or less, about 300 g / mol or less, about 400 g / mol or less, about 500 g / mol or less, about 600 g / mol or less, about 700 g / mol or less, about 800 g / mol or less, about 900 g / mol or less, and about 1,100 g / mol or less.

77. The composition according to any one of claims 46 to 76, wherein the degree of fluorination of the first ligand portion and the second ligand portion differs by only one of the following: about 0.03 or less, about 0.09 or less, about 0.14 or less, about 0.18 or less, about 0.22 or less, about 0.28 or less, about 0.36 or less, about 0.56 or less, about 0.71 or less, about 0.78 or less, about 0.82 or less, about 0.99 or less, about 1.56 or less, about 1.64 or less, about 1.78 or less, about 1.85 or less, about 1.98 or less, about 2.34 or less, about 3.56 or less, about 3.64 or less, and about 3.70 or less.

78. The device according to any one of claims 45 to 77, wherein the cyclophosphazene portion is one of a cyclotriphosphazene portion and a cyclotetraphosphazene portion.

79. A device comprising the composition according to any one of claims 45 to 78.

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