Capacitor dielectric layer, method for manufacturing the same, and capacitor structure
A laminated capacitor dielectric layer with zirconium oxide and hafnium oxide in specific crystal phases, combined with a barrier layer, addresses the challenge of high dielectric constants and low leakage currents in DRAM capacitors, enhancing capacitor performance.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- シーエックスエムティー コーポレーション
- Filing Date
- 2025-03-20
- Publication Date
- 2026-06-03
AI Technical Summary
Existing semiconductor technologies face challenges in achieving higher dielectric constants and lower leakage currents in DRAM capacitors, particularly with materials like hafnium oxide that do not crystallize into high-permittivity phases, leading to high leakage currents.
A capacitor dielectric layer is constructed with laminates of zirconium oxide and hafnium oxide in specific crystal phases, including tetragonal and orthorhombic structures, with a barrier layer to control leakage currents, using atomic layer deposition to achieve a stacked structure with controlled thickness ratios and lattice matching.
The laminated structure achieves high relative permittivity and low leakage currents, meeting the requirements for high capacitance and low leakage in DRAM capacitors.
Smart Images
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