Self-cleaning inductively coupled plasma source

Abstract

The substrate processing system includes a processing chamber, a plasma source, a first coil and a second coil, and a power supply. The plasma source is configured to supply plasma to the processing chamber through a gas distributor positioned between the processing chamber and the plasma source. The first and second coils are positioned to fit into the gaps above the plasma source and are configured to ignite the gas supplied to the plasma source to generate plasma. The power supply is configured to alternately supply power to the first and second coils.

Description

Technical Field

[0001] Cross - reference to Related Applications This application claims the benefit of U.S. Provisional Application No. 63 / 467,761, filed on May 19, 2023. The entire disclosure of the application referenced above is incorporated herein by reference.

[0002] The present disclosure generally relates to substrate processing systems, and more particularly to self - cleaning inductively coupled plasma sources.

Background Art

[0003] The description of the background art provided herein is for the purpose of generally presenting the context of the present disclosure. To the extent that aspects of the description are not recognized as prior art at the time of filing, including the research of the inventors, they are not admitted as prior art to the present disclosure, either expressly or impliedly.

[0004] Atomic layer deposition (ALD) is a thin - film deposition method that sequentially performs gas - phase chemical processes to deposit a thin film on the surface of a material (e.g., the surface of a substrate such as a semiconductor wafer). Most ALD processes use at least two chemical substances called precursors (reactants) that react with the surface of the material, and the precursors are used sequentially and self - limitingly, one at a time. For example, a typical ALD process includes a series of dose steps and purge steps that are continuously repeated. By repeatedly exposing to different precursors, a thin film is gradually deposited on the surface of the material.

[0005] Plasma - enhanced ALD (PEALD) processes use plasma after the dose step. In some substrate processing systems, the plasma can be generated in - situ within the processing chamber. Alternatively, the plasma can be generated outside or remotely from the processing chamber and supplied to the processing chamber.

Summary of the Invention

Means for Solving the Problems

[0006] The substrate processing system comprises a processing chamber, a plasma source, a first coil and a second coil, and a power supply. The plasma source is configured to supply plasma to the processing chamber through a gas distribution device positioned between the processing chamber and the plasma source. The first coil and the second coil are positioned to fit into the gaps above the plasma source and are configured to ignite the gas supplied to the plasma source to generate plasma. The power supply is configured to alternately supply power to the first coil and the second coil.

[0007] In an additional feature, the power supply is configured to supply more power to the first coil than to the second coil.

[0008] In addition, the windings of the first and second coils are entangled with each other.

[0009] In an additional feature, the first coil and the second coil are electrically insulated from each other.

[0010] In an additional feature, the board processing system further comprises a switching circuit connected to a power supply. The switching circuit comprises a first output connected to a first coil and a second output connected to a second coil. The switching circuit is configured to alternately supply power from the power supply to the first and second coils via the first and second outputs, respectively.

[0011] In an additional feature, the power supply is configured to supply a first high-frequency power to a first coil and a second high-frequency power to a second coil.

[0012] In an additional feature, the first high-frequency power supplied to the first coil is greater than the second high-frequency power supplied to the second coil.

[0013] In an additional feature, the power supply is configured to supply a first high-frequency power to a first coil over a first period and a second high-frequency power to a second coil over a second period.

[0014] In terms of additional features, the first period is longer than the second period.

[0015] In addition, the first high-frequency power supplied to the first coil over a first period is greater than the second high-frequency power supplied to the second coil over a second period. The first period is longer than the second period.

[0016] In an additional feature, the power supply is configured to power the first coil in order to generate plasma.

[0017] In an additional feature, the power supply is configured to power a second coil in order to erode material deposited on the inner surface of the plasma source in the region between the windings of the first coil.

[0018] In terms of additional features, the plasma source may be dome-shaped, cylindrical, elliptical, or conical.

[0019] In addition, the plasma source is dome-shaped, cylindrical, elliptical, or conical. The first and second coils are arranged around the plasma source.

[0020] In additional features, the plasma source is cylindrical with a first end coupled to a gas distributor. The first and second coils are positioned on the surface of the second end of the plasma source.

[0021] In an additional feature, the substrate processing system further comprises an injector and a pedestal. The injector is coupled to a plasma source. The injector is configured to inject gas into the plasma source to generate plasma. The pedestal is disposed within the processing chamber and supports the substrate. The gas distribution device is configured to filter ions from the plasma and supply radicals from the plasma into the processing chamber to process the substrate.

[0022] In yet another feature, the substrate processing system comprises a processing chamber, a plasma source, a coil, and an actuator configured to vary the position of the coil over the plasma source. The plasma source is configured to supply plasma to the processing chamber through a gas distribution device disposed between the processing chamber and the plasma source. The coil is disposed over the plasma source and is configured to ignite the gas supplied to the plasma source to generate plasma. And

[0023] In an additional feature, the substrate processing system further comprises a power supply configured to supply power to the coil to ignite the gas. The actuator is configured to vary the position of the coil while the power supply supplies power to the coil.

[0024] In an additional feature, the actuator is configured to vary the position of the coil to erode material deposited on the inner surface of the plasma source in the region between the turns of the coil.

[0025] In an additional feature, the actuator is configured to vary the position of the coil intermittently.

[0026] In an additional feature, the actuator is configured to vary the position of the coil periodically.

[0027] In an additional feature, the actuator is configured to repeatedly vary the position of the coil between two positions.

[0028] In an additional feature, the actuator is configured to linearly change the position of the coil between two positions.

[0029] In an additional feature, the actuator is configured to change the position of the coil by rotating the coil and moving the turns of the coil across different regions of the plasma source.

[0030] In an additional feature, the actuator is configured to change the position of the coil by compressing and releasing the coil.

[0031] In an additional feature, the actuator is configured to change the position of the coil by dishing the coil.

[0032] In an additional feature, the plasma source is dome-shaped, cylindrical, elliptical, or conical.

[0033] In an additional feature, the plasma source is dome-shaped, cylindrical, elliptical, or conical. The coil is disposed around the plasma source.

[0034] In an additional feature, the plasma source is cylindrical and has a first end coupled to a gas distribution device. The coil is disposed on the surface of the second end of the plasma source.

[0035] In an additional feature, the substrate processing system further includes an injector and a pedestal. The injector is coupled to the plasma source. The injector is configured to inject gas into the plasma source to generate plasma. The pedestal is disposed within the processing chamber and supports a substrate. The gas distribution device is configured to filter ions from the plasma and supply radicals from the plasma into the processing chamber to process the substrate.

[0036] Further areas of application of this disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and do not limit the scope of this disclosure.

[0037] This disclosure will be better understood from the detailed description and accompanying drawings. [Brief explanation of the drawing]

[0038] [Figure 1] This figure shows an example of a substrate processing system equipped with an inductively coupled plasma (ICP) source. [Figure 2] This figure shows an example of a substrate processing system having dual radio frequency (RF) antennas and a dome-shaped ICP plasma source. [Figure 3A] An example of a substrate processing system with dual RF antennas and a cylindrical ICP plasma source is shown. [Figure 3B] An example of a substrate processing system with dual RF antennas and a cylindrical ICP plasma source is shown. [Figure 4] This figure shows an example of a substrate processing system having a dual RF antenna and an elliptical ICP plasma source. [Figure 5] This figure shows an example of a substrate processing system having a dual RF antenna and a conical ICP plasma source. [Figure 6] This figure shows an example of a substrate processing system having a single spatially movable RF antenna and a dome-shaped ICP plasma source. [Figure 7A] An example of a substrate processing system having a single spatially movable RF antenna and a cylindrical ICP plasma source is shown. [Figure 7B] An example of a substrate processing system having a single spatially movable RF antenna and a cylindrical ICP plasma source is shown. [Figure 8] This figure shows an example of a substrate processing system having a single spatially movable RF antenna and an elliptical ICP plasma source. [Figure 9] This figure shows an example of a substrate processing system having a single spatially movable RF antenna and a conical ICP plasma source. [Figure 10] This document describes how to operate the substrate processing system shown in Figures 2 to 5 using a dual RF antenna. [Figure 11] This document describes how to operate the substrate processing system shown in Figures 6 to 9 using a single, spatially movable RF antenna. [Modes for carrying out the invention]

[0039] In drawings, reference numbers may be reused to identify similar and / or identical elements.

[0040] Typically, inductively coupled plasma (ICP) plasma sources are not used to deposit conductive films on substrates such as semiconductor wafers. However, because ICP plasma sources can generally achieve much higher plasma densities and associated higher radical fluxes than other types of plasma sources, they are attractive candidates for challenging applications such as depositing conductive films on substrates such as semiconductor wafers.

[0041] ICP plasma sources typically use a solid dielectric window to isolate a helical coil-shaped antenna, excited by radio frequency (RF) power, from the plasma generated within the processing chamber. When a conductive film is deposited on a substrate within the processing chamber using an ICP plasma source, the conductive film also slowly deposits on the dielectric window in areas not beneath the antenna. This deposition of conductive film on the dielectric window in areas not beneath the antenna is sometimes referred to as "window fogging."

[0042] Conductive films deposited on dielectric windows in areas not beneath the antenna increasingly act as a Faraday cage, shielding the electric field from the antenna and hindering consistent power coupling to the plasma. The main negative effect of shielding the electric field from the antenna and interfering with consistent power coupling to the plasma is process drift. Process drift can cause non-uniformity in substrate processing and is therefore highly undesirable in semiconductor manufacturing processes.

[0043] To overcome the problem of unintended conductive film deposition in ICP plasma sources, which otherwise prevents inductive coupling through dielectric windows or domes, several solutions have been proposed. For example, one solution is to fully immerse the coil (i.e., antenna) in the vacuum within the processing chamber without a dielectric window. However, in such a configuration, the coil itself sputters onto the substrate being processed within the processing chamber. Sputtering is unacceptable in some applications, including the deposition of conductive films performed using an ICP plasma source.

[0044] This disclosure provides two methods for overcoming window fogging. The first method uses a secondary antenna. The second method uses a single antenna with spatial movement of the antenna. These methods are first briefly described below and then described in detail below with reference to Figure 2 and subsequent figures.

[0045] Secondary antenna: Window fogging may not occur directly beneath the antenna. This is thought to be due to localized continuous sputtering near the antenna. When the secondary coil is co-wound and spatially entangled with the primary antenna, a system can be adopted that allows for periodic power supply to the primary antenna and periodic power supply to an alternative secondary antenna. At any given point in time, most, if not all, of the RF power is applied to only one antenna.

[0046] Spatial movement of the antenna: In this method, a single antenna is used and moved slowly so that the sputtering area moves continuously to effectively clean different parts of the dielectric window. The coil can be moved in various ways depending on the shape of the plasma source (e.g., dome-shaped, cylindrical, elliptical, hemispherical, conical, etc.) and how the coil is positioned around the plasma source. For example, the coil can be rotated around the vertical axis of the plasma source, oscillated (e.g., compressed and released) around the vertical axis of the plasma source, and rotated back and forth or linearly displaced on the top surface of the plasma source (e.g., cylindrical plasma source).

[0047] The movement may be continuous or intermittent. The movement allows different parts of the coil to be positioned at different locations around the plasma source at different times. This movement can not only minimize the deposition of conductive film on the dielectric window, but also remove any residual deposition of conductive film that may occur on the dielectric window.

[0048] Examples of mechanisms used to move an antenna include a stepper motor. An antenna can also be rotated by rotating the entire electrical system itself (e.g., by rotating the RF power supply and coils). An antenna can also be rotated using an electrically rotating coupling device such as an electric slip ring. Other examples of slip rings include liquid mercury slip rings and ball bearing-based slip rings.

[0049] Dual-antenna and spatial-moving antenna schemes overcome significant limitations in the application of conventional ICP plasma sources to conductive film deposition by providing self-cleaning of dielectric windows. For example, in a secondary-antenna scheme, if the primary antenna is fed but the secondary antenna is not, material may accumulate in the dielectric window beneath the secondary antenna. Subsequently, if the primary antenna is stopped and the secondary antenna is fed, the accumulation beneath the secondary antenna is eroded. Similarly, if the secondary antenna is fed but the primary antenna is not, material may accumulate in the dielectric window beneath the primary antenna. Subsequently, if the secondary antenna is stopped and the primary antenna is fed, the accumulation beneath the primary antenna is eroded. In a spatial-moving scheme, any accumulation that may occur between antenna segments is eroded (cleaned) when the antenna is moved.

[0050] In the antenna spatial movement method, the movement of the antenna can not only minimize the deposition of conductive films on the dielectric window, but also remove any residual deposition of conductive films that may occur on the dielectric window during substrate processing. These and other features of the present disclosure are described in detail below.

[0051] This disclosure is organized as follows: Section 1 describes an example of a substrate processing system with an ICP plasma source, with reference to Figure 1. Sections 2-5 describe examples of substrate processing systems with dual antennas of different geometric shapes and ICP plasma sources, with reference to Figures 2-5. Sections 6-9 describe examples of substrate processing systems with spatially movable antennas of different geometric shapes and ICP plasma sources, with reference to Figures 6-9. Sections 10 and 11 describe methods for operating a substrate processing system with dual antennas and a spatially movable single antenna, with reference to Figures 9 and 10.

[0052] Section 1: An example of a substrate processing system Figure 1 shows an example of a substrate processing system 100 comprising a processing chamber 102, a dual plenum shower head 104, and a dome-shaped plasma source 106. The dome shape is shown for illustrative purposes only. The plasma source 106 can be any other shape (e.g., elliptical, cylindrical, etc.) as shown in subsequent figures. In the illustrated example, the plasma source 106 has a circular base. The plasma source 106 extends upward from the circular base to the upper center, having a dome-shaped (e.g., parabolic or conical) contour. The plasma source 106 contains a ceramic (e.g., dielectric) material. The plasma source 106 includes an injector 107 located in the upper center of the plasma source 106.

[0053] The showerhead 104 includes a metallic material (e.g., aluminum or an alloy). The showerhead 104 is positioned between the processing chamber 102 and the plasma source 106. The showerhead 104 is positioned above the processing chamber 102 and below the plasma source 106. The showerhead 104 separates the plasma source 106 from the processing chamber 102. The processing chamber 102 is positioned on one side of the showerhead 104 (i.e., the side facing the substrate). The plasma source 106 is positioned on a second side of the showerhead 104, opposite to the first side of the showerhead 104.

[0054] The processing chamber 102 includes a pedestal 108. The substrate 110 is placed on the pedestal 108 during processing. An actuator 112 is connected to the stem of the pedestal 108. The actuator 112 can adjust the gap between the substrate 110 and the shower head 104 by moving the pedestal 108 vertically up and down relative to the shower head 104.

[0055] The substrate processing system 100 includes a gas delivery system 120 that supplies various gases to the processing chamber 102 and the plasma source 106. For example, during substrate processing, the gas delivery system 120 includes a process gas supply source 122, a purge gas supply source 124, and a precursor supply source 126. The process gas supply source 122 can supply one or more process gases depending on the process being performed on the substrate 110. The purge gas supply source 124 can supply one or more process gases (e.g., one or more inert gases). The precursor supply source 126 can supply one or more precursors (reactants) depending on the process being performed on the substrate 110.

[0056] Furthermore, although not shown, the gas delivery system 120 may also include a cleaning gas source capable of supplying one or more cleaning gases to clean the processing chamber 102, shower head 104, and plasma source 106 during preventive maintenance. Furthermore, although not shown, each of the process gas source 122, purge gas source 124, and precursor source 126 (and cleaning gas source) may include valves and mass flow controllers for controlling the supply of their respective gases.

[0057] The gas delivery system 120 further comprises a plurality of valves (e.g., valves 130, 132, 134, 136). The process gas supply source 122 supplies one or more process gases to the injector 107 via valve 130. The purge gas supply source 124 can supply one or more purge gases to the injector 107 via valve 132. The purge gas supply source 124 can supply one or more purge gases to the showerhead 104 via valve 134. The precursor supply source 126 can supply one or more precursors to the showerhead 104 via valve 136.

[0058] The shower head 104 is a dual plenum shower head. The shower head 104 is substantially cylindrical in shape. The shower head 104 comprises an upper part 103 and a lower part 105. The upper part 103 is cylindrical. The lower part 105 is annular. The shower head 104 is monolithic; that is, the upper part 103 and the lower part 105 are one unit (i.e., a single part). The upper part 103 is also called the body of the shower head 104. The body (i.e., upper part) 103 of the shower head 104 comprises an upper surface, a lower surface, and sides that define the plenum of the shower head 104, as will be described in detail below.

[0059] The plasma source 106 is attached to the upper part 103 of the shower head 104. Specifically, the circular base portion of the plasma source 106 is attached to the upper part 103 of the shower head 104. The lower part 105 of the shower head 104 extends vertically downward from the lower peripheral region of the upper part 103 of the shower head 104. The upper part 103 of the shower head 104 extends radially outward from the upper region of the lower part 105, forming a flange 101. The side wall of the processing chamber 102 is attached to the lower end of the lower part 105 of the shower head 104. The flange 101 of the shower head 104 extends radially outward from the side wall of the processing chamber 102.

[0060] The outer diameter (OD) of the flange 101 of the shower head 104 is the same as the OD of the upper part 103 of the shower head 104. The OD of the lower part 105 of the shower head 104 is the same as the OD of the side wall of the processing chamber 102. The OD of the upper part 103 of the shower head 104 is larger than the OD of the lower part 105 of the shower head 104. The inner diameter (ID) of the lower part 105 of the shower head 104 is larger than the OD of the pedestal 108. This allows the pedestal 108 to be raised and lowered by the actuator 112 to adjust the distance between the substrate 110 and the shower head 104.

[0061] The shower head 104 has two plenums on its upper part 103. The two plenums are defined by the top, bottom, and sides of the upper part 103 of the shower head 104. The first plenum 140 extends radially across the upper part 103 of the shower head 104. The first plenum 140 has an inlet 121 located around the upper part 103 of the shower head 104 (e.g., on the flange 101). The first plenum 140 receives one or more precursors from a precursor supply source 126 through the inlet 121 via a valve 136. The first plenum 140 has a plurality of holes 142-1, 142-2, ..., and 142-N (collectively holes 142, where N is a positive integer). The first plenum 140 supplies one or more precursors into the processing chamber 102 via the holes 142. Thus, the holes 142 are also called precursor holes 142. The inlet 121, the first plenum 140, and the precursor hole 142 are in fluid communication with each other.

[0062] The precursor holes 142 extend from the first plenum 140 to the bottom surface of the upper part 103 of the showerhead 104 (i.e., the surface facing the substrate or the processing chamber 102). For convenience, the first plenum 140 containing the precursor holes 142 is collectively referred to as the precursor plenum 140. The precursor holes 142 are radially distributed across the upper part 103 of the showerhead 104, from the center of the showerhead 104 to the ID of the lower part 105 of the showerhead 104. The diameter of the first plenum 140 is greater than the diameter of the substrate 110.

[0063] The upper part 103 of the showerhead 104 has a second plenum comprising a plurality of through-holes 144-1, 144-2, ..., and 144-N (collectively, through-holes 144, where N is a positive integer). The through-holes 144 extend from the top surface of the upper part 103 of the showerhead 104 to the bottom surface of the upper part 103 of the showerhead 104. As described later, when plasma 113 is formed in the plasma source 106, ions from the plasma 113 are filtered by the through-holes 144, and radicals from the plasma 113 pass through the through-holes 144 into the processing chamber 102. Therefore, the through-holes 144 are also called radical holes 144. The radical holes 144 are radially distributed across the upper part 103 of the showerhead 104, from the center of the showerhead 104 to the ID of the lower part 105 of the showerhead 104.

[0064] The diameter of the radical pore 144 is larger than the diameter of the precursor pore 142. In some implementations, the diameter of the radical pore 144 may also be smaller and therefore equal to the diameter of the precursor pore 142. The radical pore 144 is not in fluid communication with the first plenum 140 and the precursor pore 142. For convenience, the radical pore 144 is collectively referred to as the second plenum 144. The first plenum 140 and the second plenum 144 are separate from each other (i.e., not in fluid communication with each other).

[0065] A coil (also called an antenna) 114 is positioned around the plasma source 106. An RF power supply 116 supplies RF power to the coil 114. When the process gas is injected into the plasma source 106 through the injector 107, the RF power supply 116 supplies RF power to the coil 114. The RF power supplied to the coil 114 activates the process gas, generating plasma 113 in the plasma source 106. A second plenum 144 (i.e., radical pore 144) filters ions from the plasma 113 and supplies radicals from the plasma 113 into the processing chamber 102.

[0066] The showerhead 104 further comprises a cooling channel 146. The cooling channel 146 is located in the upper part 103 of the showerhead 104. The cooling channel 146 is located above the first plenum 140 (i.e., the precursor plenum 140). The cooling channel 146 extends radially across the upper part 103 of the showerhead 104. The fluid delivery system 150 circulates the coolant through the cooling channel 146 via inlets and outlets (neither shown) located around the upper part 103 of the showerhead 104 (e.g., on the flange 101). The cooling channel 146, the first plenum 140, and the second plenum 144 are isolated from each other (i.e., not fluidly communicating with each other).

[0067] Although not shown, the pedestal 108 also includes a cooling channel. The fluid delivery system 150 also circulates coolant through the cooling channel in the pedestal 108 via an inlet and outlet (both not shown) provided in the pedestal 108. The pedestal 108 further includes a heater 109. The heater 109 heats the pedestal 108, thereby heating the substrate 110. The pedestal 108 includes a temperature sensor 152 for detecting the temperature of the pedestal 108. The showerhead 104 also includes a temperature sensor 154 for detecting the temperature of the showerhead 104. The system controller 160 controls the heater 109 and the supply of coolant from the fluid delivery system 150 to the pedestal 108 and showerhead 104 to control the temperatures of the pedestal 108 and showerhead 104.

[0068] The processing chamber 102 includes a plurality of exhaust ports (not shown) arranged around the lower periphery of the side wall of the processing chamber 102. The exhaust ports are connected to a foreline 162 which is coupled to the processing chamber 102 via a valve 166. The substrate processing system 100 includes a vacuum pump 164 which is coupled to the processing chamber 102 and the foreline 162 via the valve 166. The vacuum pump 164 maintains the pressure (e.g., vacuum) inside the processing chamber 102 during substrate processing. The vacuum pump 164 also exhausts gases (e.g., precursors, process gases, purge gases, etc.) and reaction byproducts from inside the processing chamber 102 during substrate processing and cleaning processes during preventive maintenance. The system controller 160 controls all the elements of the substrate processing system 100 described above.

[0069] Herein, an example of an ALD cycle including dose and purge steps that can be performed on a substrate 110 in a substrate processing system 100 is described. For example, in the dose step, a precursor is supplied into the processing chamber 102 through the precursor plenum 142. A purge gas (e.g., an inert gas) is supplied at a low flow rate (i.e., supplied at a low flow rate) into the plasma source 106 through the injector 107 to maintain positive pressure in the plasma source 106.

[0070] A post-dose purge step follows the dose step. In the post-dose purge step, the plasma source 106 and the processing chamber 102 are purged with an inert gas. In the post-dose purge step, a low flow rate of the inert gas is maintained through the plasma source 106, and the purge gas is supplied into the processing chamber 102 through the precursor plenum 140. In some examples, the flow rate of the purge gas through the plasma source 106 can be greater than the low flow rate supply.

[0071] The conversion step follows the post-dose purge step. In the conversion step, a process gas (e.g., nitrogen) is supplied to the plasma source 106 through the injector 107 at a flow rate greater than that of the low-flow supply. Nitrogen can also be supplied as a purge gas used in the purge step of the ALD cycle. The RF power supply 116 supplies RF power to the coil 114, which activates the process gas to generate plasma 113 in the plasma source 106. The second plenum 144 filters ions from the plasma 113 and supplies radicals from the plasma 113 into the processing chamber 102. The radicals react with precursors previously deposited on the substrate 110 during the dose step to deposit the desired material (e.g., silicon nitride) on the substrate 110.

[0072] A second purging step follows the conversion step. In the second purging step of the ALD cycle, at the end of the conversion process, the RF power supply 116 stops supplying RF power to the coil 114, extinguishing the plasma 113 in the plasma source 106. The plasma source 106 and the processing chamber 102 are purged as described in the post-dose purging step above. The cycle of these steps is repeated until a material of the desired thickness is deposited on the substrate 110. During the purging step, the vacuum pump 164 removes gases and reaction byproducts from the processing chamber 102.

[0073] In some processes, the same or different precursors can be used in alternating dose steps of ALD cycles, depending on the recipe used to process the substrate 110. For example, a first precursor can be used in the first dose step of the first ALD cycle, and a second precursor can be used in the second dose step of the second ALD cycle that follows the first ALD cycle. These ALD cycles are repeated until a material of the desired thickness is deposited on the substrate 110.

[0074] As described above, during substrate processing, some material may deposit in the region 111 of the plasma source 106 between the windings of the coil 114. This material can accumulate over time and act as a Faraday cage to shield the electric field from the coil 114, thus hindering consistent power coupling to the plasma 113. The main negative effect of shielding the electric field from the coil 114 and interfering with consistent power coupling to the plasma 113 is process drift. Process drift can therefore cause non-uniformity in substrate processing, which is highly undesirable in semiconductor manufacturing processes.

[0075] This disclosure provides two methods for minimizing and cleaning up undesirable deposition and accumulation of material on a plasma source. The first method uses a secondary antenna in addition to a primary antenna. The second method uses a single antenna with spatial movement of the antenna. These methods are described below in detail for various shapes of plasma sources. Throughout the following description, the terms antenna(s) and coil(s) are used interchangeably and synonymously for elements 114 and 115.

[0076] Section 2: Dual Antenna System - Dome-shaped Plasma Source Figure 2 shows a substrate processing system 200 with dual antennas (two coils) arranged around a dome-shaped plasma source 106. The substrate processing system 200 is similar to the substrate processing system 100 shown in Figure 1 in that it also includes the same dome-shaped plasma source used in the substrate processing system 100. The substrate processing system 200 differs from the substrate processing system 100 in that, in addition to the coil 114 (also called the first coil) used in the substrate processing system 100, it includes a second coil 115. All elements identified in Figure 2, which have the same reference numerals as those used in Figure 1, are not repeated for the sake of brevity. Some elements shown in Figure 1 are omitted in Figure 2 for the sake of simplicity, but are assumed to exist.

[0077] Coils 114 and 115 are also called antennas 114 and 115. Together, coils 114 and 115 are called a dual coil or dual antenna. Coil 114 can be called the first coil, primary coil, first antenna, or primary antenna. Coil 115 can be called the second coil, secondary coil, second antenna, or secondary antenna.

[0078] The first and second coils 114 and 115 are positioned to fit into the gaps around the plasma source 106. "Fitting into the gaps" means they are interwoven, entangled, cross-connected, or wound around each other. The first and second coils 114 and 115 are co-wound and spatially cross-connected. For example, the windings of the first and second coils 114 and 115 are alternating as shown. The first and second coils 114 and 115 are not electrically connected to each other. Rather, the first and second coils 114 and 115 are electrically insulated from each other. The windings of the second coil 115 cover the region 111 of the plasma source 106 between the windings of the first coil 114.

[0079] The substrate processing system 200 includes a switching circuit 117. The switching circuit 117 is connected to an RF power supply 116. The switching circuit 117 has a first output connected to a first coil 114. The switching circuit 117 also has a second output connected to a second coil 115.

[0080] The system controller 160 is connected to the switching circuit 117. The system controller 160 controls the switching circuit 117. The system controller 160 and the switching circuit 117 control the amount and duration of RF power supplied from the RF power supply 116 to the first and second coils 114 and 115. The switching circuit 117 controls the supply of RF power from the RF power supply 116 to the first and second coils 114 and 115. The switching circuit 117 alternately supplies RF power from the RF power supply 116 to the first and second coils 114 and 115, and therefore the RF power supply 116 alternately supplies RF power to the first and second coils 114 and 115 as follows.

[0081] The RF power supplied to the first coil 114 generates plasma 113 within the processing chamber 102. In contrast, the RF power supplied to the second coil 115 cleans material deposited or accumulated on the inner surface of the plasma source 106 in the region 111 between the windings of the first coil 114. The RF power supplied to the second coil 115 does not generate plasma in the plasma source 106. Therefore, the switching circuit 117 supplies a small amount of RF power to the second coil 115 for a shorter period than to the first coil 114. For example, the RF power supplied to the second coil 115 may be less than 10% or less than 5% of the RF power supplied to the first coil 114. The switching circuit 117 supplies more RF power to the first coil (i.e., primary antenna 114) than to the second coil (i.e., secondary antenna) 115 for a longer period.

[0082] Generally, the switching circuit 117 supplies a first amount of RF power from the RF power supply 116 to the first coil 114 via its first output. The switching circuit 117 also supplies a second amount of RF power from the RF power supply 116 to the second coil 115 via its second output. The second amount is less than the first amount.

[0083] The switching circuit 117 supplies a first amount of RF power to the first coil 114 over a first period. The switching circuit 117 supplies a second amount of RF power to the second coil 115 over a second period. The second period is shorter than the first period.

[0084] The amount of RF power supplied and the duration for which RF power is supplied to the first and second coils 114 and 115 may differ depending on the amount of RF power supplied and the switching circuit 117. The switching circuit 117 may use different combinations of the amount of RF power supplied and the duration for which RF power is supplied to the first and second coils 114 and 115.

[0085] At any given time, the switching circuit 117 supplies the majority (e.g., 90% or 95%) of the RF power from the RF power supply 116 to only one antenna (e.g., a first coil or primary antenna 114). By supplying RF power to a second coil (i.e., a secondary antenna) 115, material deposition and accumulation in the region 111 of the plasma source 106 beneath the winding of the second coil (i.e., secondary antenna) 115 can be minimized and / or cleaned. As a result, process drift that could otherwise be caused by material accumulation in the region 111 of the plasma source 106 is minimized or eliminated, and non-uniformity in substrate processing is avoided.

[0086] Section 3: Dual Antenna System - Cylindrical Plasma Source Figure 3A shows a substrate processing system 300 equipped with a dual antenna (two coils) positioned on a cylindrical plasma source 106. The substrate processing system 300 is similar to the substrate processing system 200 shown in Figure 2, except that the substrate processing system 300 is equipped with a cylindrical plasma source instead of a dome-shaped plasma source. The first and second coils 114 and 115 are positioned laterally on the upper surface of the cylindrical plasma source 106. The first and second coils 114 and 115 are positioned horizontally on the upper surface of the cylindrical plasma source 106 in a plane parallel to the plane on which the upper part 103 of the showerhead 104 is located. The upper surface of the cylindrical plasma source 106 is on the opposite side from the bottom surface of the cylindrical plasma source 106 attached to the upper part 103 of the showerhead 104.

[0087] As shown in Figure 2 of the substrate processing system 200, the first and second coils 114 and 115 are co-wound and spatially entangled with each other. The first and second coils 114 and 115 are positioned to fit into the gaps on the upper surface of the cylindrical plasma source 106. For example, the windings of the first and second coils 114 and 115 are alternate as shown. The winding of the second coil 115 covers the region 111 on the upper surface of the cylindrical plasma source 106 that lies between the windings of the first coil 114.

[0088] All elements identified in Figure 3A, which have the same reference numerals as those used in Figures 1 and 2, are not repeated for the sake of brevity. Some elements shown in Figure 1 are omitted in Figure 3A for the sake of simplicity, but are assumed to be present. The switching circuit 117 controls the supply of RF power from the RF power supply 116 to the first and second coils 114 and 115, as described above with reference to Figure 2. Therefore, for the sake of brevity, the description is not repeated.

[0089] Here again, at any given time, the majority of the RF power from the RF power supply 116 is applied to only one antenna (e.g., the first coil or primary antenna 114). By supplying RF power to the second coil (i.e., secondary antenna) 115, the deposition and accumulation of material in the upper surface region 111 of the cylindrical plasma source 106 below the winding of the second coil (i.e., secondary antenna) 115 can be minimized and / or cleaned. As a result, process drift that could otherwise be caused by material accumulation in the upper surface region 111 of the cylindrical plasma source 106 is minimized or eliminated, and non-uniformity in substrate processing is avoided.

[0090] Figure 3 shows a substrate processing system 300-1 equipped with a dual antenna (two coils) positioned on a cylindrical plasma source 106. Substrate processing system 300-1 differs from substrate processing system 300 shown in Figure 3A in that it includes an alternating arrangement of first and second coils 114 and 115 on the cylindrical plasma source 106. Specifically, in substrate processing system 300-1, the first and second coils 114 and 115 are not positioned on the top surface of the cylindrical plasma source 106. Instead, in substrate processing system 300-1, the first and second coils 114 and 115 are positioned around the side walls of the cylindrical plasma source 106. The first and second coils 114 and 115 are positioned perpendicular to the side walls of the cylindrical plasma source 106 along a vertical axis perpendicular to the plane in which the upper part 103 of the showerhead 104 is located. Otherwise, the substrate processing system 300-1 is the same as the substrate processing system 300 shown in Figure 3A.

[0091] As shown in the substrate processing systems 200 and 300 in Figures 2 and 3A, the first and second coils 114 and 115 are co-wound and spatially entangled with each other. The first and second coils 114 and 115 are positioned 111 so as to fit into the gaps around the sidewall of the cylindrical plasma source 106. For example, the windings of the first and second coils 114 and 115 are alternate as shown. The winding of the second coil 115 covers the region 111 of the sidewall of the cylindrical plasma source 106 between the windings of the first coil 114.

[0092] All elements identified in Figure 3B, which have the same reference numerals as those used in Figures 1, 2, and 3A, are not repeated for the sake of brevity. Some elements shown in Figure 1 are omitted in Figure 3B for the sake of simplicity, but are assumed to be present. The switching circuit 117 controls the supply of RF power from the RF power supply 116 to the first and second coils 114 and 115, as described above with reference to Figure 2. Therefore, for the sake of brevity, the description is not repeated.

[0093] Here again, at any given time, the majority of the RF power from the RF power supply 116 is applied to only one antenna (e.g., the first coil or primary antenna 114). By supplying RF power to the second coil (i.e., secondary antenna) 115, the deposition and accumulation of material in the region 111 on the side wall of the cylindrical plasma source 106 below the winding of the second coil (i.e., secondary antenna) 115 can be minimized and / or cleaned. As a result, process drift that could otherwise be caused by material accumulation in the region 111 on the upper side wall of the plasma source 106 is minimized or eliminated, and non-uniformity in substrate processing is avoided.

[0094] Section 4: Dual Antenna System - Elliptical Plasma Source Figure 4 shows a substrate processing system 400 comprising a dual antenna (two coils) arranged around an elliptical plasma source 106. Substrate processing system 400 is similar to substrate processing systems 200, 300, and 300-1 shown in Figures 2, 3A, and 3B, except that substrate processing system 400 comprises an elliptical plasma source instead of a dome-shaped or cylindrical plasma source. In substrate processing system 400, the first and second coils 114 and 115 are arranged around the elliptical plasma source 106.

[0095] As shown in the substrate processing systems 200, 300, and 300-1 in Figures 2, 3A, and 3B, the first and second coils 114 and 115 are co-wound and spatially entangled with each other. The first and second coils 114 and 115 are arranged to fit into the gaps around the elliptical plasma source 106. For example, the windings of the first and second coils 114 and 115 are alternating as shown. The winding of the second coil 115 covers the region 111 of the elliptical plasma source 106 between the windings of the first coil 114.

[0096] All elements identified in Figure 4, which have the same reference numerals as those used in Figures 1, 2, 3A, and 3B, are not repeated for the sake of brevity. Some elements shown in Figure 1 are assumed to exist in Figure 4, but are omitted for the sake of simplicity. The switching circuit 117 controls the supply of RF power from the RF power supply 116 to the first and second coils 114 and 115, as described above with reference to Figure 2. Therefore, for the sake of brevity, the description is not repeated.

[0097] Here again, at any given time, the majority of the RF power from the RF power supply 116 is applied to only one antenna (e.g., the first coil or primary antenna 114). By supplying RF power to the second coil (i.e., secondary antenna) 115, the deposition and accumulation of material in the region 111 of the elliptical plasma source 106 beneath the winding of the second coil (i.e., secondary antenna) 115 can be minimized and / or cleaned. As a result, process drift that could otherwise be caused by material accumulation in the region 111 of the elliptical plasma source 106 is minimized or eliminated, and non-uniformity in substrate processing is avoided.

[0098] Section 5: Dual Antenna System - Conical Plasma Source Figure 5 shows a substrate processing system 500 comprising a dual antenna (two coils) arranged around an elliptical plasma source 106. Substrate processing system 500 is similar to substrate processing systems 200, 300, 300-1, and 400 shown in Figures 2, 3A, 3B, and 4, except that substrate processing system 500 comprises a dome-shaped plasma source, a cylindrical plasma source, or a conical plasma source instead of an elliptical plasma source. In substrate processing system 500, the first and second coils 114 and 115 are arranged around the conical plasma source 106.

[0099] As shown in the substrate processing systems 200, 300, 300-1, and 400 in Figures 2, 3A, 3B, and 4, the first and second coils 114 and 115 are co-wound and spatially entangled with each other. The first and second coils 114 and 115 are arranged to fit into the gaps around the elliptical plasma source 106. For example, the windings of the first and second coils 114 and 115 are alternating as shown. The winding of the second coil 115 covers the region 111 of the conical plasma source 106 between the windings of the first coil 114.

[0100] All elements identified in Figure 5, which have the same reference numerals as those used in Figures 1, 2, 3A, 3B, and 4, are not repeated for the sake of brevity. Some elements shown in Figure 1 are omitted in Figure 5 for the sake of simplicity in illustration, but are assumed to be present. The switching circuit 117 controls the supply of RF power from the RF power supply 116 to the first and second coils 114 and 115, as described above with reference to Figure 2. Therefore, for the sake of brevity, the description is not repeated.

[0101] Here again, at any given time, the majority of the RF power from the RF power supply 116 is applied to only one antenna (e.g., the first coil or primary antenna 114). By supplying RF power to the second coil (i.e., secondary antenna) 115, the deposition and accumulation of material in the region 111 of the conical plasma source 106 beneath the winding of the second coil (i.e., secondary antenna) 115 can be minimized and / or cleaned. As a result, any process drift that could otherwise be caused by material accumulation in the region 111 of the conical plasma source 106 is minimized or eliminated, and non-uniformity in substrate processing is avoided.

[0102] Section 6: Single Antenna System - Dome-shaped Plasma Source Figure 6 shows a substrate processing system 600 comprising a single antenna (single coil) 114 arranged around a dome-shaped plasma source 106. The substrate processing system 600 is similar to the substrate processing system 100 shown in Figure 1 in that it also includes the dome-shaped plasma source used in the substrate processing system 100. The substrate processing system 600 differs from the substrate processing system 100 in that it includes a coil movement system 119 for moving the coil 114. The coil movement system 119 will be described in detail below. All elements identified in Figure 6, which have the same reference numerals as those used in Figure 1, are not repeated for brevity. Some elements shown in Figure 1 are omitted in Figure 6 for simplicity of explanation, but are assumed to exist.

[0103] The coil movement system 119 is connected to the coil 114. The system controller 160 is connected to the coil movement system 119. The system controller 160 controls the coil movement system 119. The coil movement system 119 moves or displaces the coil 114 between two positions on or around the surface of the dome-shaped plasma source 106. For example, the two positions may be called the first and second positions. For example, the two positions may be called the native position and the displaced position. In Figures 6 to 9, the first position of the coil 114 is shown by indicating the coil 114 with a solid line. The second (displaced) position of the coil 114 is shown by indicating the coil 114 with a dashed line.

[0104] For example, the coil moving system 119 moves the coil 114 from a first position to a second position. Subsequently, the coil moving system 119 moves the coil 114 from the second position to the first position. The coil moving system 119 repeatedly moves the coil 114 between the first and second positions (e.g., swinging, dithering (i.e., moving intermittently or randomly), or oscillating). For example, the coil moving system 119 may periodically oscillate the coil 114, or intermittently move the coil 114 to random positions between the first and second positions. The coil moving system 119 can move the coil 114 between the first and second positions periodically or continuously.

[0105] As the coil relocation system 119 moves or displaces the coil 114 from a first position to a second position, the windings of the coil 114 move into the region 111 of the dome-shaped plasma source 106 that is between the windings of the coil 114 when the coil 114 is in the first position. The coil relocation system 119 moves the coil 114 while the RF power supply 116 supplies RF power to the coil 114. By moving the coil 114 between the first and second positions while supplying RF power to the coil 114, the deposition and buildup of material in the region 111 of the dome-shaped plasma source 106 can be minimized and / or cleaned.

[0106] The coil moving system 119 can move or displace the coil 114 in many ways. The coil moving system 119 may include different types of actuators coupled to the coil 114 to move or displace the coil 114 in different ways. For example, the coil moving system 119 may include a stepper motor connected to the outermost winding of the coil 114. The stepper motor may repeatedly push and pull (e.g., compress and release) the coil 114.

[0107] In some examples, although not shown, the coil moving system 119 may include a first stepper motor connected to the uppermost winding of the coil 114 and a second stepper motor connected to the lowermost winding of the coil 114. The first and second stepper motors can move the coil 114 as follows:

[0108] For example, a first stepper motor connected to the uppermost winding can push coil 114 downward (towards the shower head 104), and a second stepper motor connected to the lowermost winding can pull coil 114 downward (towards the shower head 104). In some examples, a first stepper motor connected to the uppermost winding can push coil 114 downward (towards the shower head 104), and a second stepper motor connected to the lowermost winding can push coil 114 upward (away from the shower head 104).

[0109] The coil moving system 119 can repeat push and pull operations of the first and second stepper motors. The coil moving system 119 may control the first and second stepper motors to perform different combinations of push and pull operations. The coil moving system 119 can move or displace the coil 114 between two or more positions using any combination of the above movements. Furthermore, the coil moving system 119 can repeat the movements in any order. In some examples, the movements can be randomized. Using these movements, the windings of the coil 114 are displaced and come into contact with different regions (e.g., region 111) on the inner surface or surrounding area of ​​the dome-shaped plasma source 106. The coil moving system 119 can move the coil 114 periodically or continuously.

[0110] In other examples, the coil movement system 119 may include a rotation system that rotates the coil 114 around the surface or periphery of the dome-shaped plasma source 106. For example, the rotation system of the coil movement system 119 rotates the coil 114 around a vertical axis perpendicular to the plane on which the upper part 103 of the showerhead 104 is located. By rotating the coil 114, the windings of the coil 114 are displaced and come into contact with different regions (e.g., region 111) on the inner surface or periphery of the dome-shaped plasma source 106.

[0111] For example, the rotation system of the coil moving system 119 can rotate the coil 114 clockwise around a vertical axis to a first position. Subsequently, the rotation system of the coil moving system 119 can rotate the coil 114 counterclockwise around the vertical axis to a second position. The rotation system of the coil moving system 119 can repeatedly move the coil 114 between the first and second positions. The rotation system of the coil moving system 119 can move the coil 114 between the first and second positions periodically or continuously.

[0112] In some examples, the rotation system of the coil moving system 119 can rotate coil 114 by rotating the entire electrical system (for example, by rotating the RF power supply 116 and coil 114). In other examples, the rotation system of the coil moving system 119 can rotate coil 114 using an electrically rotating coupling device such as an electric slip ring. Other examples of slip rings include liquid mercury slip rings and ball bearing-based slip rings. The linear and rotational mechanisms of the coil moving system 119 that move coil 114 linearly and rotate coil 114 as described above can be collectively referred to as the actuators of the coil moving system 119 that move coil 114.

[0113] In the example described above, the coil moving system 119 moves the coil 114 while the RF power supply 116 supplies RF power to the coil 114. Moving the coil 114 while supplying RF power to it minimizes and / or cleans the deposition and buildup of material in the region 111 of the dome-shaped plasma source 106 between the windings of the coil 114. As a result, process drift that may be caused by material buildup in the region 111 of the dome-shaped plasma source 106 is minimized or eliminated, and non-uniformity of the substrate processing is avoided.

[0114] Section 7: Single Antenna System - Cylindrical Plasma Source Figure 7A shows a substrate processing system 700 comprising a single antenna (single coil) 114 positioned on a cylindrical plasma source 106. The substrate processing system 700 is similar to the substrate processing system 600 shown in Figure 6, except that the substrate processing system 700 comprises a cylindrical plasma source instead of a dome-shaped plasma source. All elements identified in Figure 7A, which have the same reference numerals as those used in Figures 1 and 6, are not repeated for the sake of brevity. Some elements shown in Figure 1 are presumed to be present in Figure 7A, but are omitted for the sake of simplicity.

[0115] The coil 114 is positioned laterally on the upper surface of the cylindrical plasma source 106. The coil 114 is positioned horizontally on the upper surface of the cylindrical plasma source 106 in a plane parallel to the plane on which the upper part 103 of the shower head 104 is located. The upper surface of the cylindrical plasma source 106 is on the opposite side from the bottom surface of the cylindrical plasma source 106 attached to the upper part 103 of the shower head 104.

[0116] The coil movement system 119 can move or displace the coil 114 laterally along a plane parallel to the plane on which the upper part 103 of the shower head 104 is located. For example, one or two stepper motors can move (displace) the coil 114 linearly along a plane parallel to the plane on which the upper part 103 of the shower head 104 is located. Alternatively, the coil movement system 119 can rotate the coil 114 around a vertical axis perpendicular to the plane on which the upper part 103 of the shower head 104 is located. The coil movement system 119 can move the coil 114 linearly or by rotating the coil 114 in different ways as described above with reference to Figure 6. Therefore, for brevity, the description will not be repeated. By moving the coil 114 laterally or by rotating the coil 114, the windings of the coil 114 are displaced and come into contact with different regions (e.g., region 111) on the upper inner surface of the cylindrical plasma source 106.

[0117] The coil moving system 119 moves the coil 114 (either laterally or by rotating the coil 114) while the RF power supply 116 supplies RF power to the coil 114. Moving the coil 114 while supplying RF power to it minimizes and / or cleans the deposition and buildup of material in the upper surface region 111 of the cylindrical plasma source 106. As a result, any process drift that could otherwise be caused by material buildup in the upper surface region 111 of the cylindrical plasma source 106 is minimized or eliminated, and non-uniformity in substrate processing is avoided.

[0118] Figure 7B shows a substrate processing system 700-1 comprising a single antenna (single coil) 114 positioned on a cylindrical plasma source 106. The substrate processing system 700-1 differs from the substrate processing system 700 shown in Figure 7A in that it includes an alternating arrangement of first coils 114 on the cylindrical plasma source 106. Specifically, in the substrate processing system 700-1, the first coils 114 are not positioned on the top surface of the cylindrical plasma source 106. Instead, in the substrate processing system 700-1, the coils 114 are positioned around the sidewalls of the cylindrical plasma source 106. The coils 114 are positioned perpendicular to the sidewalls of the cylindrical plasma source 106 along an axis perpendicular to the plane in which the upper part 103 of the showerhead 104 is located. Otherwise, the substrate processing system 700-1 is similar to the substrate processing system 700 shown in Figure 7A. All elements identified in Figure 7B, which have the same reference numbers as those used in Figures 1, 6, and 7A, are not repeated for the sake of brevity. Some elements shown in Figure 1 are omitted in Figure 7B for the sake of simplicity, but are assumed to exist.

[0119] The coil movement system 119 can move or displace the coil 114 linearly along a vertical axis perpendicular to the plane on which the upper part 103 of the shower head 104 is located. For example, one or two stepper motors can move (displace) the coil 114 linearly along a vertical axis perpendicular to the plane on which the upper part 103 of the shower head 104 is located. Alternatively, the coil movement system 119 can rotate the coil 114 around a vertical axis perpendicular to the plane on which the upper part 103 of the shower head 104 is located. The coil movement system 119 can move the coil 114 linearly and by rotating the coil 114 in different ways as described above with reference to Figure 6. Therefore, for brevity, the description will not be repeated. By moving the coil 114 laterally or by rotating the coil 114, the windings of the coil 114 are displaced and come into contact with different regions (e.g., region 111) of the sidewall of the cylindrical plasma source 106.

[0120] The coil moving system 119 moves the coil 114 (either laterally or by rotating the coil 114) while the RF power supply 116 supplies RF power to the coil 114. Moving the coil 114 while supplying RF power to it minimizes and / or cleans up material deposition and buildup in the region 111 on the side wall of the cylindrical plasma source 106. As a result, any process drift that could otherwise be caused by material accumulation in the region 111 on the upper surface of the cylindrical plasma source 106 is minimized or eliminated, and non-uniformity in substrate processing is avoided.

[0121] Section 8: Single Antenna System - Elliptical Plasma Source Figure 8 shows a substrate processing system 800 comprising a single antenna (single coil) 114 positioned around an elliptical plasma source 106. The substrate processing system 800 is similar to the substrate processing systems 600, 700, and 700-1 shown in Figures 6, 7A, and 7B, except that the substrate processing system 800 comprises an elliptical plasma source instead of a dome-shaped or cylindrical plasma source. In the substrate processing system 800, the coil 114 is positioned around the elliptical plasma source 106. All elements identified in Figure 8, which have the same reference numerals as those used in Figures 1, 6, 7A, and 7B, are not repeated for the sake of brevity. Some elements shown in Figure 1 are omitted in Figure 8 for the sake of simplicity, but are assumed to exist.

[0122] The coil movement system 119 can move or displace the coil 114 along the surface or periphery of the elliptical plasma source 106 in different ways, as described above with reference to Figure 6. Alternatively, the coil movement system 119 can rotate the coil 114 in different ways, as described above with reference to Figure 6. Therefore, for brevity, the explanation will not be repeated. By moving or rotating the coil 114, the windings of the coil 114 are displaced and come into contact with different regions (e.g., region 111) on the surface of the elliptical plasma source 106.

[0123] The coil movement system 119 moves or rotates the coil 114 while the RF power supply 116 supplies RF power to the coil 114. By moving or rotating the coil 114 while supplying RF power to it, the deposition and accumulation of material within the region 111 of the elliptical plasma source 106 can be minimized and / or cleaned. As a result, any process drift that could otherwise be caused by material accumulation within the region 111 of the elliptical plasma source 106 is minimized or eliminated, and non-uniformity in substrate processing is avoided.

[0124] Section 9: Single Antenna System - Conical Plasma Source Figure 9 shows a substrate processing system 900 comprising a single antenna (single coil) 114 arranged around a conical plasma source 106. The substrate processing system 900 is similar to the substrate processing systems 600, 700, 700-1, and 800 shown in Figures 6, 7A, 7B, and 8, except that the substrate processing system 500 comprises a conical plasma source instead of a dome-shaped, cylindrical, or elliptical plasma source. In the substrate processing system 900, the coil 114 is positioned around the conical plasma source 106. All elements identified in Figure 9, which have the same reference numerals as those used in Figures 1, 6, 7A, 7B, and 8, are not repeated for brevity. Some elements shown in Figure 1 are omitted in Figure 9 for simplicity of explanation but are assumed to exist.

[0125] The coil movement system 119 can move or displace the coil 114 along the surface or periphery of the conical plasma source 106 in various ways, as described above with reference to Figure 6. Alternatively, the coil movement system 119 can rotate the coil 114 at many different points, as described above with reference to Figure 6. Therefore, for brevity, the explanation will not be repeated. By moving or rotating the coil 114, the windings of the coil 114 are displaced and come into contact with different regions (e.g., region 111) on the inner surface of the conical plasma source 106.

[0126] The coil movement system 119 moves or rotates the coil 114 while the RF power supply 116 supplies RF power to the coil 114. By moving or rotating the coil 114 while supplying RF power to it, the deposition and accumulation of material within the region 111 of the conical plasma source 106 can be minimized and / or cleaned. As a result, any process drift that could otherwise be caused by material accumulation within the region 111 of the conical plasma source 106 is minimized or eliminated, and non-uniformity in substrate processing is avoided.

[0127] Section 10: Control Method - Dual Antenna System Figure 10 shows method 1000 for controlling the dual antennas (coils 114, 115) described above with reference to Figures 2 to 5. For example, the system controller 160 and switching circuit 117 described above with reference to Figures 2 to 5 can implement method 1000.

[0128] In 1002, the two coils 114 and 115 are spatially entangled with each other around the plasma source 106, as described above with reference to Figures 2 to 5. In 1004, the substrate 110 is loaded into the processing chamber 102. In 1006, in order to process the substrate 110 in the processing chamber 102, the gas delivery system 120 supplies process gas to the plasma source 106, as described above with reference to Figure 1.

[0129] In 1008, the system controller 160 and the switching circuit 117 control the RF power supplied to the two coils 114 and 115, as described above with reference to Figures 2 to 5. The RF power supplied to coil 114 ignites the gas in the plasma source 106, generating plasma 113 within the plasma source 106 to deposit material on the substrate 110. The RF power supplied to coil 115 minimizes and / or cleans up material deposition in the region 111 of the plasma source 106. In 1010, the plasma 113 is used to deposit material on the substrate 110.

[0130] Section 11: Control Method - Single Antenna System Figure 11 shows method 1100 for controlling the single antenna (coil 114) described above with reference to Figures 6 to 9. For example, the system controller 160 and coil moving system 119 described above with reference to Figures 6 to 9 can perform method 1100.

[0131] In 1102, the coil 114 is positioned around the plasma source 106 as described above with reference to Figures 6 to 9. In 1104, the substrate 110 is loaded into the processing chamber 102. In 1106, in order to process the substrate 110 in the processing chamber 102, the gas delivery system 120 supplies process gas to the plasma source 106 as described above with reference to Figure 1.

[0132] In 1108, the RF power supply 116 supplies RF power to the coil 114 as described above with reference to Figures 6 to 9. The RF power supplied to the coil 114 ignites the gas in the plasma source 106, generating plasma 113 within the plasma source 106 to deposit material on the substrate 110. In 1110, the system controller 160 and the coil movement system 119 intermittently or continuously move the coil 114 around the plasma source 106 as described above with reference to Figures 6 to 9. The movement of the coil 114 minimizes and / or cleans up material deposition in the region 111 of the plasma source 106 while the plasma 113 is used to deposit material on the substrate 110.

[0133] The foregoing description is merely illustrative and is not intended to limit the Disclosure, its uses, or any applications. The broad teachings of this Disclosure can be implemented in various forms. Therefore, while this Disclosure includes certain examples, the true scope of this Disclosure should not be limited in this way, as other modifications become apparent when considering the drawings, specification, and appended claims.

[0134] It should be understood that one or more steps within the method may be performed in a different order (or simultaneously) without altering the principles of this disclosure. Furthermore, although each example is described above as having a specific feature, one or more of those features described in relation to any one of the examples in this disclosure may be implemented and / or combined with features in any of the other examples, even if the combination is not explicitly described. In other words, the examples described are not mutually exclusive, and permutations of one or more examples with respect to each other remain within the scope of this disclosure.

[0135] The spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.) are described using a variety of terms, including “connected,” “engaged,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “disposed.” Unless explicitly stated to be “direct,” if a relationship between a first and second element is described in the above disclosure, that relationship may be a direct relationship in which no other intervening elements exist between the first and second elements, or it may be an indirect relationship in which one or more intervening elements (spatially or functionally) exist between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted as meaning (A OR B OR C) using the non-exclusive logic OR, and not as meaning "at least one of A, at least one of B, and at least one of C."

[0136] In some implementations, the controller is part of a system that may be part of the examples described above. Such a system may comprise a semiconductor processing apparatus including one or more process tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as a wafer pedestal or gas flow system). These systems may be integrated with electronic equipment for controlling pre-processing, in-processing, and post-processing operations of the semiconductor wafer or substrate.

[0137] Electronic devices may be referred to as “controllers” that can control various components or sub-components of one or more systems. Depending on the processing requirements and / or the type of system, a controller can be programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer and tool loading / unloading connected to or interfaced with a particular system, and other transfer tools and / or load locks.

[0138] Broadly speaking, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software).

[0139] Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing a specific process on a semiconductor wafer or system. In some examples, operational parameters may be part of a recipe defined by a process engineer to achieve one or more processing steps during the manufacturing of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0140] In some implementations, the controller may be part of, or coupled to, a computer integrated with, coupled to, or otherwise networked to, the system, or a combination thereof. For example, the controller may be in all or part of a “cloud” or fab-host computer system, enabling remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance metrics from multiple manufacturing operations, modify parameters of the current process, set processing steps to follow the current process, or initiate a new process.

[0141] In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network that may include a local network or the internet. The remote computer may include a user interface that allows input or programming of parameters and / or settings, which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify the parameters for each of the processing steps performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to interface with or control.

[0142] Therefore, as described above, the controllers may be distributed, for example, by comprising one or more separate controllers that are networked together and act toward a common purpose such as the processes and controls described herein. An example of a distributed controller for such purposes is one or more integrated circuits on a chamber that communicate with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer) which are combined to control the processes on the chamber.

[0143] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, clean chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems related to or usable in the fabrication and / or manufacture of semiconductor wafers.

[0144] As described above, depending on one or more processing steps performed by the tool, the controller may communicate with one or more of the following: other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, the main computer, another controller, or tools used for material transport to carry wafer containers to tool locations and / or load ports in the semiconductor manufacturing plant. [Explanation of symbols]

[0145] 100 substrate processing systems 102 Processing Chamber 103 Upper 103 104 Dual Plenum Shower Head 105 Lower part 106 Plasma source 107 Injectors 108 Pedestals 109 Heater 110 circuit boards 111 areas 112 Actuator 113 Plasma 114 coils 115 coils 116 RF power supply 117 Switching Circuits 119 Coil Transfer System 120 Gas Delivery Systems 121 Entrance 122 Process gas supply sources 124 Purge gas supply source 126 Precursor Source 130 valve 132 valves 134 valves 136 valves 140 First Plenum 142 Precursor pores 144 holes 144 Radical Pores 144 Through holes 144 Second Plenum 146 cooling channels 150 Fluid Delivery Systems 152 Temperature Sensor 154 Temperature Sensor 160 System Controllers 162 Magnetic field lines 164 Vacuum pump 166 valves

Claims

1. Processing chamber and A plasma source comprising a plasma source that supplies plasma to the processing chamber through a gas distribution device disposed between the processing chamber and the plasma source, A first coil and a second coil are positioned on the plasma source so as to fit into the gap, and ignite the gas supplied to the plasma source to generate the plasma. A power supply that alternately supplies power to the first coil and the second coil, A substrate processing system equipped with the following features.

2. The substrate processing system according to claim 1, wherein the power supply is configured to supply more power to the first coil than to the second coil.

3. The substrate processing system according to claim 1, wherein the windings of the first coil and the second coil are entangled with each other.

4. The substrate processing system according to claim 1, wherein the first coil and the second coil are electrically insulated from each other.

5. The substrate processing system according to claim 1, further comprising a switching circuit connected to the power supply, wherein the switching circuit comprises a first output connected to the first coil and a second output connected to the second coil, and the switching circuit is configured to alternately supply the power from the power supply to the first and second coils via the first and second outputs, respectively.

6. The substrate processing system according to claim 1, wherein the power supply is configured to supply a first high-frequency power to the first coil and a second high-frequency power to the second coil.

7. The substrate processing system according to claim 6, wherein the first high-frequency power supplied to the first coil is greater than the second high-frequency power supplied to the second coil.

8. The substrate processing system according to claim 6, wherein the power supply is configured to supply the first high-frequency power to the first coil over a first period of time and to supply the second high-frequency power to the second coil over a second period of time.

9. The substrate processing system according to claim 8, wherein the first period is longer than the second period.

10. The substrate processing system according to claim 8, wherein the first high-frequency power supplied to the first coil over the first period is greater than the second high-frequency power supplied to the second coil over the second period, and the first period is longer than the second period.

11. The substrate processing system according to claim 1, wherein the power supply is configured to supply the power to the first coil in order to generate the plasma.

12. The substrate processing system according to claim 1, wherein the power supply is configured to supply power to the second coil in order to erode material deposited on the inner surface of the plasma source in the region between the windings of the first coil.

13. The substrate processing system according to claim 1, wherein the plasma source is dome-shaped, cylindrical, elliptical, or conical.

14. The substrate processing system according to claim 1, wherein the plasma source is dome-shaped, cylindrical, elliptical, or conical, and the first and second coils are arranged around the plasma source.

15. The substrate processing system according to claim 1, wherein the plasma source is cylindrical with a first end coupled to the gas distribution device, and the first and second coils are arranged on the surface of the second end of the plasma source.

16. An injector coupled to the plasma source, configured to inject gas into the plasma source to generate the plasma, A pedestal, which is placed inside the processing chamber and supports the substrate, Furthermore, The gas distribution device is configured to filter ions from the plasma and supply radicals from the plasma into the processing chamber to process the substrate. The substrate processing system according to claim 1.

17. Processing chamber and The plasma source supplies plasma to the processing chamber through a gas distribution device positioned between the processing chamber and the plasma source, A coil is placed in the plasma source and ignites the gas supplied to the plasma source to generate the plasma, An actuator that changes the position of the coil on the plasma source, A substrate processing system comprising the above.

18. The substrate processing system according to claim 17, further comprising a power supply configured to supply power to the coil in order to ignite the gas, wherein the actuator is configured to change the position of the coil while the power supply is supplying power to the coil.

19. The substrate processing system according to claim 18, wherein the actuator is configured to change the position of the coil in order to erode material deposited on the inner surface of the plasma source in the region between the windings of the coil.

20. The substrate processing system according to claim 17, wherein the actuator is configured to intermittently change the position of the coil.

21. The substrate processing system according to claim 17, wherein the actuator is configured to periodically change the position of the coil.

22. The substrate processing system according to claim 17, wherein the actuator is configured to repeatedly change the position of the coil between two positions.

23. The substrate processing system according to claim 17, wherein the actuator is configured to linearly change the position of the coil between two positions.

24. The substrate processing system according to claim 17, wherein the actuator is configured to change the position of the coil by rotating the coil and moving the windings of the coil across different regions of the plasma source.

25. The substrate processing system according to claim 17, wherein the actuator is configured to change the position of the coil by compressing and releasing the coil.

26. The substrate processing system according to claim 17, wherein the actuator is configured to change the position of the coil by periodically vibrating the coil.

27. The substrate processing system according to claim 17, wherein the plasma source is dome-shaped, cylindrical, elliptical, or conical.

28. The substrate processing system according to claim 17, wherein the plasma source is dome-shaped, cylindrical, elliptical, or conical, and the coil is arranged around the plasma source.

29. The substrate processing system according to claim 17, wherein the plasma source is cylindrical with a first end coupled to the gas distribution device, and the coil is arranged on the surface of the second end of the plasma source.

30. An injector coupled to the plasma source, configured to inject gas into the plasma source to generate the plasma, A pedestal, which is placed inside the processing chamber and supports the substrate, Furthermore, The gas distribution device is configured to filter ions from the plasma and supply radicals from the plasma into the processing chamber to process the substrate. The substrate processing system according to claim 17.

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