Retaining ring for chemical mechanical polishing

Abstract

Retaining rings used in chemical mechanical processing include a thermally conductive material formed from a base material and a material filler. The material filler is between 10% and 70% by weight relative to the material of the retaining ring.

Claims

1. A retaining ring for chemical mechanical processing, It has a thermally conductive material formed from a base material and a material filler, A retaining ring wherein the material filler is between 10% and 70% by weight of the material of the retaining ring.

2. The retaining ring according to claim 1, wherein the thermal conductivity of the thermal conductive material at the through-surface of the retaining ring is between 0.5 W / mk and 40 W / mk.

3. The retaining ring according to claim 2, wherein the thermal conductivity of the thermally conductive material at the through-surface of the retaining ring is between 2.0 W / mk and 40 W / mk.

4. The aforementioned material fillers are carbon, glass, polyimide, PAI, and TiO 2 A retaining ring according to any one of claims 1 to 3, comprising at least one of ceramic, silica, alumina, boron nitride, diamond, aramid, aluminum oxide, aluminum nitride, pitch carbon fiber, PAN carbon fiber, pitch graphite fiber, graphite fiber, and graphite.

5. The retaining ring according to claim 1 or 2, wherein the substrate is a thermoplastic polymer comprising at least one of PEEK, PPS, PET, PI, PAI, PK, PAEK, PTFE, PPA, LCP, PBT, nylon, TPU, polyolefin, or similar polymers.

6. The retaining ring according to claim 1 or 2, wherein the thermally conductive material is a crosslinked polymer.

7. The retaining ring according to claim 1 or 2, wherein the material filler is between 20% by weight and 40% by weight in terms of the weight ratio of the retaining ring material.

8. The aforementioned material fillers are carbon, glass, polyimide, PAI, and TiO 2 The retaining ring according to claim 7, comprising at least one of ceramic, silica, alumina, boron nitride, diamond, aramid, aluminum oxide, aluminum nitride, pitch carbon fiber, PAN carbon fiber, pitch graphite fiber, graphite fiber, and graphite.

9. The retaining ring according to claim 4, wherein the material filler is boron nitride.

10. The retaining ring according to claim 9, wherein the material filler is between 20% by weight and 40% by weight in terms of the weight ratio of the retaining ring material.

11. The retaining ring according to claim 4, wherein the substrate is a thermoplastic polymer comprising at least one of PEEK, PPS, PET, PI, PAI, PK, PAEK, PTFE, PPA, LCP, PBT, nylon, TPU, polyolefin, or similar polymers.

12. A chemical mechanical polishing system, Platen and, A polishing pad placed on the platen, A slurry distribution system configured to supply polishing slurry onto the polishing pad, A carrier head configured to hold a wafer, A retaining ring configured to hold the wafer at a predetermined position on the housing of the carrier head, It has, At least one of the platen and the carrier head is configured to rotate, The retaining ring has a thermally conductive material formed from a base material and a material filler. A chemical mechanical polishing system wherein the material filler is between 10% and 70% by weight of the material of the retaining ring.

13. A method of chemical mechanical polishing, The steps include: holding the wafer in the carrier head, The steps include: fixing the wafer onto the housing of the carrier head using a retaining ring; Steps include providing a polishing pad on the platen, The steps include supplying polishing slurry onto the polishing pad, The steps include: polishing the wafer by rotating at least one of the platen and the carrier head and applying pressure between the wafer and the polishing pad; It has, The retaining ring has a thermally conductive material formed from a base material and a material filler. The method wherein the material filler is between 10% and 70% by weight in weight ratio of the material of the retaining ring.

14. The method according to claim 13, wherein the wafer is made of GaAs or SiC.

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