Process chamber with multiple cooling plates

Abstract

Multiple embodiments of process chambers having cooling plates are provided herein. In some embodiments, the process chamber includes a chamber body defining an internal space. The chamber body has a viewport side having an opening configured as a viewport, a pump side having a pump port, and a shutter side facing the viewport side. In this case, the viewport side, the pump side, and the shutter side are all different sides of the chamber body. The process chamber further includes a first cooling plate coupled to the viewport side and having one or more first coolant channels, a second cooling plate coupled to the pump side and having one or more second coolant channels, and a third cooling plate coupled to the shutter side and having one or more third coolant channels.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to a substrate processing apparatus.

Background Art

[0002]

[0002] In the manufacture of semiconductor integrated circuits, sputtering, also referred to as physical vapor deposition (PVD), is used for depositing metals and other materials. The use of sputtering has been extended to applications where a material layer is deposited on the sidewalls of high aspect ratio (HAR) holes or gaps (e.g., vias or other vertical interconnect structures). However, the inventors have confirmed, without limitation, that when processing a substrate such as a 200 mm substrate at a high temperature (e.g., >700 °C), the temperature of the chamber body becomes prohibitively high, the pump efficiency decreases, and the performance may deteriorate.

[0003]

[0003] Accordingly, the inventors have provided several embodiments of an improved process chamber.

Summary of the Invention

[0004]

[0004] Several embodiments of a process chamber having a cooling plate are provided herein. In some embodiments, the process chamber includes a chamber body that defines an internal space. The chamber body has a viewport side having an opening configured as a viewport, a pump side having a pump port, and a shutter side opposite the viewport side. In that case, the viewport side, the pump side, and the shutter side are all on different sides of the chamber body. The process chamber further includes a first cooling plate coupled to the viewport side and having one or more first coolant channels, a second cooling plate coupled to the pump side and having one or more second coolant channels, and a third cooling plate coupled to the shutter side and having one or more third coolant channels.

[0005]

[0005] In some embodiments, the process chamber includes a chamber body that defines an internal space. The chamber body has a viewport side having an opening configured as a viewport, a pump side having a pump port, and a shutter side facing the viewport side. In this case, the viewport side, the pump side, and the shutter side are all different sides of the chamber body. The process chamber further includes a first cooling plate coupled to the viewport side, having one or more first coolant channels and having a first conduit inside; a second cooling plate coupled to the pump side, having one or more second coolant channels and having a second conduit inside; and a third cooling plate coupled to the shutter side, having one or more third coolant channels and having a third conduit inside. In this case, the first conduit is fluidly coupled to the second conduit and the third conduit.

[0006]

[0006] In some embodiments, the process chamber includes a chamber body that defines an internal space. The chamber body has a viewport side having an opening configured as a viewport, a pump side having a pump port, and a shutter side facing the viewport side. In this case, the viewport side, the pump side, and the shutter side are all different sides of the chamber body. The process chamber further includes a first cooling plate coupled to the viewport side, having one or more first coolant channels and having a first conduit inside; a second cooling plate coupled to the pump side, having one or more second coolant channels and having a second conduit inside; and a third cooling plate coupled to the shutter side, having one or more third coolant channels and having a third conduit inside. In this case, the first conduit is fluidly coupled to the second conduit and the third conduit. The process chamber further includes an upper plate coupled to the upper surface of the chamber body, the upper plate having one or more coolant channels fluid-coupled to the first conduit, and a cryopump coupled to the pump port.

[0007]

[0007] Other and further embodiments of the present disclosure are described below.

[0008]

[0008] Embodiments of the present disclosure, which are briefly summarized above and described in more detail below, can be understood by referring to exemplary embodiments of the present disclosure shown in the accompanying drawings. However, since the present disclosure may allow for other equally valid embodiments, the accompanying drawings show only typical embodiments of the present disclosure and should not be considered limiting in scope. [Brief explanation of the drawing]

[0009] [Figure 1]

[0009] A schematic cross-sectional side view of a process chamber according to at least some embodiments of the present disclosure is shown. [Figure 2]

[0010] A schematic top isometric view of a process chamber according to at least some embodiments of the present disclosure is shown. [Figure 3]

[0011] A schematic bottom isometric view of a process chamber according to at least some embodiments of the present disclosure is shown. [Figure 4]

[0012] A schematic isometric view of a process chamber according to at least some embodiments of the present disclosure is shown. [Figure 5]

[0013] An isometric view of a first cooling plate according to at least some embodiments of the present disclosure is shown. [Figure 6]

[0014] An isometric view of a second cooling plate according to at least some embodiments of the present disclosure is shown. [Figure 7]

[0015] An isometric view of a third cooling plate according to at least some embodiments of the present disclosure is shown. [Figure 8]

[0016] A cross-sectional side view of a portion of a first cooling plate according to at least some embodiments of the embodiments of the present disclosure is shown. [Modes for carrying out the invention]

[0010]

[0017] For ease of understanding, the same reference numerals have been used to indicate identical elements common to the figures where possible. The figures are not to scale and may be simplified for clarity. Elements and features of one embodiment may be usefully incorporated into other embodiments without further description.

[0011]

[0018] Multiple embodiments of process chambers having cooling plates are provided herein. The process chamber may be a deposition chamber, such as a physical vapor deposition (PVD) chamber. Conventional process chambers typically do not have any further cooling mechanisms, because the outer wall temperature of the chamber body is about 65 degrees Celsius or less. When a conventional process chamber operates at high temperatures without further cooling mechanisms, the temperature of the chamber body can exceed 100 degrees Celsius. Such high temperatures pose a danger to personnel operating the process chamber and can reduce the efficiency of certain components of the process chamber (e.g., cryopump). The process chamber includes multiple cooling plates coupled to the process chamber, which reduce the temperature of the chamber body during processing when the internal space of the process chamber is heated to high temperatures.

[0012]

[0019] Multiple cooling plates are advantageously coupled to multiple sides of the chamber body to adequately cool the chamber body while maintaining access to ports, conduits, gas supply sources, power sources, etc. Cooling plates generally include internally positioned channels or conduits for the flow of coolant through them. Each channel or conduit in a cooling plate may be isolated for independent temperature control of each cooling plate, or all channels or conduits in a cooling plate may be fluidly coupled. In some embodiments, channels may take the form of slots or grooves configured to receive internally positioned conduits. In some embodiments, channels may be perforated or otherwise formed within the cooling plate. Thereafter, coolant can flow through the channels without any further internally positioned conduits. Gaskets can be advantageously positioned between the multiple cooling plates and the chamber body to enhance heat conduction. Multiple cooling plates advantageously maintain the outer wall of the chamber body at a temperature of approximately 100 degrees Celsius or less, for example, below 60 degrees Celsius.

[0013]

[0020] Figure 1 shows a schematic cross-sectional side view of a process chamber 100 according to at least some embodiments of the present disclosure. Although the process chamber 100 is illustrated as a PVD chamber, the cooling plates described herein may be used with any suitable chamber for semiconductor processing. The process chamber 100 generally includes a chamber body 101 defining an internal space 140. A target 103 is positioned in the internal space 140 opposite a substrate support 113 configured to support a substrate 150 for processing. A process kit 131 may be positioned in the internal space 140 around the substrate support 113 to prevent undesirable deposition on the chamber walls or other chamber components. The chamber body 101 supports the target 103. In some embodiments, the target 103 is sealed at one end of the chamber body 101 via a target isolator 102 using a plurality of O-rings. The target 103 has at least a surface portion made of the material to be sputtered, which is positioned on the substrate 150 positioned on the substrate support 113. The chamber body 101 includes a substrate transfer opening 157 to facilitate the transfer of the substrate 150 into and out of the internal space 140. In some embodiments, the substrate transfer opening 157 is located on the opposite side of the chamber body 101 from the pump port 153.

[0014]

[0021] A magnetron 105 may be positioned above the target 103. The magnetron 105, positioned adjacent to the target 103 and rotated, includes a plurality of magnets 174A-174B. The plurality of magnets 174A-174B are used to confine the plasma P generated within the internal space 140 by biasing the target 103 using a power supply 193 to "sputter" the material from the target surface 103A. The magnetron 105 may be any suitable type of magnetron for which a particular process is performed on the substrate 150. The power supply 193 generally includes a power supply 194 configured to supply DC and / or RF power to the target 103. In some RF power supply configurations, the power supply 193 may also include a match 195.

[0015]

[0022] The pump assembly 121 is coupled to the chamber body 101 via a pump port 153 located on the pump side 101A of the chamber body 101. In some embodiments, the pump side 101A is located on the side wall of the chamber body 101. In some embodiments, the pump side 101A may be the bottom wall 101D of the chamber body 101. The pump assembly 121 generally comprises a pump 123 and a valve 122 located between the pump 123 and the pump port 153. In some embodiments, the pump 123 is a cryopump. In some embodiments, the pump 123 includes both a cryopump and a roughing pump. The roughing pump is used to maintain a desired pressure in the internal space 140.

[0016]

[0023] In some embodiments, the substrate support 113 includes an electrostatic chuck 112. The electrostatic chuck 112 has a support surface adapted to support the substrate 150 on one or more electrodes 132. The one or more electrodes 132 may be chuck electrodes. Alternatively, the substrate support 113 may have other suitable holding mechanisms for holding the substrate 150, such as a vacuum chuck or clamp. One or more heating elements 156, cooling channels (not shown), and heat transfer gas cavities (not shown) may be formed within the substrate support 113 to provide thermal control of the substrate 150 during processing. One or more heating elements 156 may be configured to heat the substrate support 113 to 700 degrees Celsius or higher during the physical vapor deposition (PVD) process. In some applications, one or more electrodes 132 may be coupled to a power supply 130 to apply RF and / or DC biases to the substrate 150 to attract the plasma P and process gas.

[0017]

[0024] In some embodiments, the process kit 131 includes a covering 107 positioned around the substrate support 113. In some embodiments, the process kit 131 includes one or more chamber shields 109 positioned around the processing space between the target 103 and the substrate support 113. While only one chamber shield is shown in Figure 1, the one or more chamber shields 109 may be two or more shields, for example, depending on the operating temperature. The one or more chamber shields 109 may be used to lower the temperature of the chamber body 101 by shielding it from radiation emanating from the processing area. In some embodiments, the process kit 131 includes a dark space shield 108. The dark space shield 108 may be isolated from the one or more chamber shields 109 by a second dielectric shield isolator 110. Components of the process kit 131 are positioned inside the process chamber 100 to protect the chamber walls from undesirable deposits. In some embodiments, the dark space shield 108 is permitted to be electrically floating, and one or more chamber shields 109 are electrically grounded. However, in some embodiments, one or both of the shields may be grounded and floating, or biased to the same or different ungrounded levels. One or more chamber shields 109 and the dark space shield 108 are typically made of a metal such as stainless steel, and the inside of the dark space shield 108 (e.g., inner surface 111) may be bead-blasted or otherwise roughened to promote the adhesion of material sputter deposited on them.

[0018]

[0025] In use, substrate 150 can be biased to attract or repel ions generated in the formed plasma P so as to be suitable for its application. For example, power supply 130 can apply RF power to one or more electrodes 132 to bias substrate 150 and can be provided to attract ions of the target material during the deposition process. In addition, power supply 130 can be configured to apply RF power to one or more electrodes 132 to couple supplementary energy to the plasma. When the power supply 130 used to bias substrate 150 is an RF power supply, the power supply can operate at an appropriate frequency such as 13.56 MHz. The computer-based controller 191 can be programmed to control the power levels, voltages, currents, and frequencies of various sources according to a specific application.

[0019]

[0026] Gas source 164 supplies a sputtering working gas, such as a chemically inert noble gas like argon, to the internal space 140 through mass flow controller 166. The working gas can be introduced at the top of the chamber or, as shown, at the bottom of the chamber. In either case, one or more inlet pipes penetrate the opening through the lower part of one or more chamber shields 109 or through the gap between one or more chamber shields 109 and substrate support 113. During the reactive PVD process, nitrogen gas can be supplied from source 198 to form a nitride-containing layer such as aluminum nitride on substrate 150.

[0020]

[0027] FIG. 2 shows a schematic top isometric view of the process chamber 100 according to at least some embodiments of the present disclosure. FIG. 3 shows a schematic bottom isometric view of the process chamber 100 according to at least some embodiments of the present disclosure. The chamber body 101 includes a viewport side 101B having an opening 210 configured as a viewport for viewing the internal space 140 from outside the chamber body 101. In some embodiments, the viewport side 101B is adjacent to the pump side 101A. The chamber body 101 includes a shutter side 101C having a shutter opening configured to provide access to the internal space 140 from the shutter side 101C. In some embodiments, the shutter side 101C is disposed opposite the viewport side 101B. The viewport side 101B, the pump side 101A, and the shutter side 101C are all on different sides of the chamber body 101.

[0021]

[0028] The upper plate 204 is coupled to the upper surface 208 of the chamber body 101. The upper plate 204 may include a central opening 218 for upper access to the internal space 140. In some embodiments, the upper plate 204 includes one or more coolant channels 216 (shown in dashed lines in FIG. 2) disposed internally in a suitable pattern around the central opening 218. The one or more coolant channels 216 may be coupled to a chiller 220 configured to circulate coolant through the one or more coolant channels 216. In some embodiments, the coolant includes water or the like. A lid 212 may be disposed on the upper plate 204 to close the central opening 218.

[0022]

[0029] A first cooling plate 232 is coupled to the viewport side 101B and includes one or more first coolant channels 242. Figure 5 shows an isometric view of the first cooling plate 232 according to at least some embodiments of the present disclosure. In some embodiments, as shown in Figure 5, the first cooling plate 232 includes conduits 510 disposed within one or more first coolant channels 242. The conduits 510 may be press-fitted into or otherwise coupled or held within one or more first coolant channels 242. In some embodiments, one or more first coolant channels 242 may be sealed within the first cooling plate 232, and the conduits 510 may or may not be required. The one or more first coolant channels 242 generally surround substantially the port opening 520 formed within the first cooling plate 232 to receive the opening 210 for the viewport. It extends along the conduit 510. The conduit 510 can be made of copper or any other suitable material.

[0023]

[0030] In some embodiments, one or more first coolant channels 242 define an inlet 512 at one end and an outlet 514 at a second end for circulating coolant through them. In some embodiments, the inlet 512 and outlet 514 are located along the same side of the first cooling plate 232. For example, as shown in Figure 5, the inlet 512 and outlet 514 are located along the lower end 502 of the first cooling plate 232. In some embodiments, the inlet 512 and outlet 514 are reversed. In some embodiments, the first cooling plate 232 includes one or more openings 528 for access to chamber body connections (e.g., gas supply source, power supply, etc.).

[0024]

[0031] In some embodiments, the first cooling plate 232 may include one or more first coolant channels 242. The one or more first coolant channels 242 are sealed and configured to allow coolant to flow through them without conduits 510 (see, for example, Figure 8). For example, one or more first coolant channels 242 may be perforated in the cooling plate to form suitable flow paths, perforation may involve creating holes through one or more side walls of the first cooling plate 232. Thereafter, the holes intersect within the first cooling plate 232 to form desired flow paths. Perforated openings along side walls that are not inlets 512 or outlets 514 may be sealed via plugs or the like. The one or more sealed first coolant channels 242 may be formed by other suitable methods. For example, they may be machined into the first plate and then joined to the second plate to seal the channels.

[0025]

[0032] Referring back to Figures 2 and 3, the second cooling plate 234 is coupled to the pump side 101A and includes one or more second coolant channels 344. The third cooling plate 236 is coupled to the shutter side 101C. Figure 6 shows an isometric view of the second cooling plate 234 according to at least some embodiments of the present disclosure. In some embodiments, as shown in Figure 6, the second cooling plate 234 includes conduits 610 disposed within one or more second coolant channels 344. The conduits 610 may be press-fitted into one or more second coolant channels 344 or otherwise coupled or held in place. In some embodiments, one or more second coolant channels 344 may be sealed within the second cooling plate 234, and the conduits 610 may or may not be necessary.

[0026]

[0033] In some embodiments, the second cooling plate 234 is coupled to at least two sides of the chamber body 101. In some embodiments, the second cooling plate 234 includes a side plate 604 coupled to the pump side 101A and a lower plate 608 extending from the side plate 604 and coupled to the lower wall 101D of the chamber body 101. The multiple side design of the second cooling plate 234 advantageously enhances the cooling of the pump side 101A coupled to the pump 123 during use.

[0027]

[0034] In some embodiments, one or more second coolant channels 344 are located within the side plate 604 and the lower plate 608. One or more second coolant channels 344 within the side plate 604 extend around the pump port 153 on the pump side 101A. In some embodiments, the second cooling plate 234 extends only partially around the pump port 153. In some embodiments, the second cooling plate 234 includes an inlet 622 and an outlet 628. In this case, one or more second coolant channels 344 define at least partially the flow path from the inlet 622 to the outlet 628. In some embodiments, the second cooling plate 234 includes a second outlet 624 within the side plate 604 and a second inlet 626 within the lower plate 608.

[0028]

[0035] In some embodiments, the flow path through the second cooling plate 234 extends from the inlet 622 to the second outlet 624 and from the second inlet 626 to the outlet 628. In some embodiments, the flow path may be reversed. In some embodiments, the conduit 610 extends from the inlet 622 to the outlet 628. The conduit 610 may extend through one or more second coolant channels 344, either entirely or partially, through one or more second coolant channels 344. For example, one or more bends 615 of the conduit 610 may be located outside one or more second coolant channels 344.

[0029]

[0036] Figure 4 shows a schematic isometric view of the process chamber 100 according to at least some embodiments of the present disclosure. The third cooling plate 236 coupled to the shutter side 101C includes one or more third coolant channels 446. Figure 7 shows an isometric view of the third cooling plate 236 according to at least some embodiments of the present disclosure. In some embodiments, as shown in Figure 7, the third cooling plate 236 includes conduits 710 disposed within one or more third coolant channels 446. The conduits 710 may be press-fitted into one or more third coolant channels 446 or otherwise coupled or held in place. In some embodiments, one or more third coolant channels 246 may be sealed within the third cooling plate 236, and the conduits 710 may or may not be required.

[0030]

[0037] The third cooling plate 236 may include one or more notches 708 for access to or receiving a connection to the chamber body 101. The conduit 710 may extend through one or more third coolant channels 446, either entirely or partially, through one or more third coolant channels 446. For example, one or more bends 715 of the conduit 710 may be located outside one or more third coolant channels 446.

[0031]

[0038] One or more third coolant channels 446 of the third cooling plate 236 may include inlets 722 and outlets 732 to define the flow path through them. In some embodiments, the inlets 722 and outlets 732 are located along the same side of the third cooling plate 236. In some embodiments, the flow through the inlets 722 and outlets 732 may be in opposite directions.

[0032]

[0039] In some embodiments, similar to those described above with respect to the first cooling plate 232, one or more second coolant channels 344 and one or more third coolant channels 446 may be enclosed within the second cooling plate 234 and the third cooling plate 236, respectively, and configured to allow coolant to flow through them. For example, one or more second coolant channels 344 and one or more third coolant channels 446 may be perforated into the respective cooling plates or appropriately machined.

[0033]

[0040] Referring back to Figures 2 and 3, in some embodiments, one or more first coolant channels 242, one or more second coolant channels 344, and one or more third coolant channels 446 are all fluid-coupled. For example, one or more first coolant channels 242 may be coupled to one or more second coolant channels 344 via a first conduit 262. In some embodiments, the second conduit 264 couples one or more second coolant channels 344 to one or more third coolant channels 446. In some embodiments, two or more of the one or more first coolant channels 242, one or more second coolant channels 344, and one or more third coolant channels 446 are fluid-uncoupled.

[0034]

[0041] In some embodiments in which one or more second coolant channels 242, one or more second coolant channels 344, and one or more third coolant channels 446 are formed within each cooling plate, a first conduit 262 extends from each outlet of a second cooling plate 232 to each inlet of a second cooling plate 234, and a second conduit 264 extends from each outlet of one or more second coolant channels 344 to each inlet of one or more third coolant channels 446.

[0035]

[0042] In some embodiments, one or more coolant channels 216 of the upper plate 204 are fluid-coupled to the conduit 610. In some embodiments, one or more coolant channels 216 of the upper plate 204 are fluid-coupled to at least one of one or more first coolant channels 242, one or more second coolant channels 344, and one or more third coolant channels 446. For example, a third conduit 266 may couple one or more third coolant channels 446 to one or more coolant channels 216 of the upper plate 204. In some embodiments, the flow path extends from the upper plate 204 to the first cooling plate 232, to the second cooling plate 234, to the third cooling plate 236, and back to the upper plate 204. However, the flow path may be in the reverse order, or pass through the first cooling plate 232, the second cooling plate 243, and the third cooling plate 236 through any suitable order and flow path.

[0036]

[0043] In some embodiments, the body 292 of the first cooling plate 232, the body 294 of the second cooling plate 234, and the body 296 of the third cooling plate 236 are substantially made of aluminum. In some embodiments, at least one of the first cooling plate 232, the second cooling plate 234, and the third cooling plate 236 includes a gasket 280 to enhance heat conduction. In some embodiments, the gasket 280 comprises a flat sheet of material attached to each cooling plate or sandwiched between each cooling plate and the wall of the chamber body 101. In some embodiments, the gasket 280 includes graphite, for example, semiconductor-grade graphite. In some embodiments, the gasket 280 is made of a combination of tin and indium. The gasket 280 is generally positioned on the side facing the chamber body 101 to enhance heat conduction. In some embodiments, only the first cooling plate 232 and the second cooling plate 234 include a gasket 280.

[0037]

[0044] Figure 8 shows a cross-sectional side view of a portion of the first cooling plate 232 according to at least some embodiments of the embodiments of the present disclosure. In some embodiments, the gasket 280 includes a first layer 810 bonded to the body 292. In some embodiments, the gasket 280 includes a second layer 820 bonded to the first layer 810 on the side opposite to the body 292. In some embodiments, the first layer 810 is made of a metal such as indium. In some embodiments, the second layer 820 is made of a metal such as tin. In some embodiments, the first layer 810 is wider than the second layer 820. In some embodiments, the first layer 810 is about 0.08 to about 0.15 inches thick. In some embodiments, the second layer 820 is about 0.02 to about 0.06 inches thick. A first cooling plate 232 is shown in Figure 8, but a second cooling plate 234 and a third cooling plate 236 may also include a gasket 280. In some embodiments, one or more first coolant channels 242 may be enclosed within the first cooling plate 232. One or more first coolant channels 242 may be enclosed via a further material 830. The further material 830 may be, for example, part of the body 292 when one or more first coolant channels 242 are formed through perforations passing through the body 292. In some embodiments, the further material 830 may be a separate part fitted into a front opening 840 of one or more first coolant channels 242.

[0038]

[0045] While the foregoing applies to several embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure may be devised without departing from the fundamental scope of the present disclosure.

Claims

1. A chamber body defining an internal space, wherein the chamber body has a viewport side having an opening configured as a viewport, a pump side having a pump port, and a shutter side facing the viewport side, and the viewport side, the pump side, and the shutter side are all different sides of the chamber body, A first cooling plate having one or more first coolant channels is coupled to the chamber body on the viewport side. On the pump side, a second cooling plate is coupled to the chamber body and has one or more second coolant channels, and A process chamber comprising a third cooling plate coupled to the chamber body on the shutter side and having one or more third coolant channels.

2. The process chamber according to claim 1, further comprising one or more conduits extending through the one or more first coolant channels to the one or more second coolant channels and to the one or more third coolant channels.

3. The process chamber according to claim 1, wherein the second cooling plate comprises a side plate coupled to the pump side and a lower plate extending from the side plate and coupled to the lower wall of the chamber body.

4. The process chamber according to claim 3, wherein the one or more second cooling channels are arranged within the side plate and the lower plate.

5. The process chamber according to claim 1, wherein the first cooling plate includes a port opening for receiving the viewport, and the one or more first coolant channels are arranged substantially around the port opening.

6. The process chamber according to any one of claims 1 to 5, further comprising an upper plate coupled to the upper surface of the chamber body, wherein the upper plate includes one or more coolant channels.

7. The process chamber according to any one of claims 1 to 5, wherein at least one of the first cooling plate, the second cooling plate, and the third cooling plate includes a gasket for enhancing heat conduction.

8. The process chamber according to claim 7, wherein the gasket comprises a first layer substantially made of tin and a second layer bonded to the first layer and substantially made of indium.

9. The process chamber according to any one of claims 1 to 5, further comprising a substrate support disposed within the internal space, wherein the substrate support has one or more heating elements configured to heat the substrate support to 700 degrees Celsius or higher during a physical vapor deposition (PVD) process.

10. The process chamber according to any one of claims 1 to 5, wherein the first cooling plate includes a first conduit disposed inside, the second cooling plate includes a second conduit disposed inside, and the third cooling plate includes a third conduit disposed inside, and the first conduit is fluidly coupled to the second and third conduits.

11. The process chamber according to claim 10, further comprising an upper plate coupled to the upper surface of the chamber body, wherein the upper plate includes one or more coolant channels fluidly coupled to the first conduit.

12. The process chamber according to any one of claims 1 to 5, wherein the body of the first cooling plate, the body of the second cooling plate, and the body of the third cooling plate are substantially made of aluminum.

13. The process chamber according to any one of claims 1 to 5, further comprising one or more chamber shields disposed within the internal space and configured to lower the temperature of the chamber body.

14. The process chamber according to any one of claims 1 to 5, wherein the first cooling plate and the second cooling plate include a gasket substantially made of a combination of tin and indium, which is positioned on the side facing the chamber body.

15. The process chamber according to any one of claims 1 to 5, further comprising a cryopump coupled to the pump port.

16. The process chamber according to claim 15, wherein the one or more first coolant channels, the one or more second coolant channels, and the one or more third coolant channels are all coupled together.

17. The process chamber according to claim 15, wherein the pump port is located on the side wall of the chamber body.

18. The process chamber according to claim 15, wherein at least one of the first cooling plate, the second cooling plate, and the third cooling plate includes a gasket made of a tin-indium combination, which is positioned on the side facing the chamber body to enhance heat conduction.

19. The process chamber according to any one of claims 1 to 5, wherein the second cooling plate is coupled to at least two sides of the chamber body.

20. The process chamber according to any one of claims 1 to 5, wherein the process chamber is a physical gas phase deposition chamber.

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