Enables CVD chamber processing on wafers at different temperatures.

Abstract

Methods and apparatus for processing substrates are described herein. The systems and methods described enable a chemical vapor deposition (CVD) chamber to process substrates (also referred to herein as wafers) at different temperatures. The processing chamber includes a chamber body, a substrate support disposed within the chamber body and having an upper surface, a plurality of substrate lift pins disposed through the substrate support, and a shadowing lift assembly. The shadowing lift assembly is operable to raise and lower a shadowing positioned above or at the same height as the upper surface of the substrate support.

Description

Technical Field

[0001] Embodiments of the present specification relate to systems and methods used in the manufacture of electronic devices, and more particularly, to systems and methods used to enable a chemical vapor deposition (CVD) chamber to process substrates (also referred to herein as wafers) at different temperatures.

Background Art

[0002] Tungsten (W) is widely used in the manufacture of integrated circuit (IC) devices to form conductive features that require relatively low electrical resistance and relatively high resistance to electromigration. For example, tungsten can be used as a metal filling material to form source contacts, drain contacts, metal gate fills, gate contacts, interconnects (e.g., horizontal features formed on the surface of a dielectric material layer), and vias (e.g., vertical features formed through a dielectric material layer to connect other interconnect features disposed above and below the dielectric material layer). Due to its relatively low resistivity, tungsten is also generally used to form bit lines and word lines used to address individual memory cells within a memory cell array of a dynamic random access memory (DRAM) device.

[0003] Tungsten may be applied to a substrate (e.g., for ICs) by a process including tungsten nucleation and bulk tungsten deposition. The nucleation process can achieve excellent coverage to a desired depth of 12 μm when the substrate is at a temperature of approximately 300°C. Bulk tungsten deposition can result in a desirable lower internal stress when the substrate is at a temperature of approximately 450°C. To deposit tungsten on a substrate, the substrate can undergo the nucleation process in a first chamber at a temperature of approximately 300°C, then be moved to a second chamber where bulk tungsten deposition can occur at a temperature of approximately 450°C. Moving the substrate from the first chamber to the second chamber during processing negatively impacts the process's production rate (throughput).

[0004] Therefore, what is needed in this field is a processing system and method to solve the above-mentioned problems. [Overview of the Initiative]

[0005] This disclosure relates to systems and methods used in the manufacture of electronic devices in general, and more particularly to systems and methods used to enable chemical vapor deposition (CVD) chambers to process wafers at different temperatures.

[0006] In one embodiment, a processing chamber for processing a substrate includes a chamber body, a substrate support disposed within the chamber body, a plurality of substrate lift pins disposed through the substrate support, and a shadowing lift assembly. The substrate support has an upper surface. The shadowing lift assembly is operable to raise and lower a shadowing positioned above or at the same height as the upper surface of the substrate support.

[0007] In one embodiment, a method for processing a substrate includes supporting the substrate at a first distance from a heater in a processing chamber, performing a nucleation process on the substrate within the processing chamber, supporting the substrate at a second distance from the heater, and performing a bulk process on the substrate within the processing chamber. The first distance is based on a first temperature of the substrate. The nucleation process is performed on the substrate while it is at the first temperature in the processing chamber. The second distance is based on a second temperature of the substrate. The bulk process is performed on the substrate within the processing chamber while it is at the second temperature.

[0008] In one embodiment, a method for determining the temperature of a substrate in a processing chamber includes collecting electromagnetic radiation from the upper surface of a substrate support placed in the processing chamber, sensing the temperature of the upper surface of the substrate support, estimating the temperature of the upper surface of the substrate support, determining the transmittance of a light pipe, collecting electromagnetic radiation from the substrate in the processing chamber, and determining the temperature of the substrate. Electromagnetic radiation is collected from the upper surface of the substrate support using a light pipe. The temperature of the upper surface of the substrate support is sensed using a temperature sensor inside the substrate support. The temperature of the upper surface of the substrate support is estimated based on the electromagnetic radiation collected from the upper surface of the substrate support by the light pipe. The transmittance of the light pipe is determined based on a comparison between the estimated temperature of the upper surface of the substrate support and the sensed temperature of the upper surface of the substrate support. Electromagnetic radiation from the substrate in the processing chamber is collected using a light pipe. The temperature of the substrate is determined based on the electromagnetic radiation collected from the substrate by the light pipe and the transmittance.

[0009] To allow for a more detailed understanding of the features enumerated above in this disclosure, a more detailed description of the disclosure, which has been briefly summarized above, can be given with reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings only illustrate exemplary embodiments of this specification and should therefore not be considered to limit its scope, as other equally effective embodiments may be permitted. [Brief explanation of the drawing]

[0010] [Figure 1] This figure schematically shows one embodiment of a processing system that can be used to process a substrate according to an embodiment of the present disclosure. [Figure 2] This figure schematically shows the processing system of Figure 1, in which a substrate is supported by a substrate support, according to an embodiment of the present disclosure. [Figure 3] This figure schematically shows a light pipe assembly in a processing system according to an embodiment of the present disclosure. [Figure 4] This figure schematically shows a substrate support within a processing system according to an embodiment of the present disclosure. [Figure 5] This figure shows a method for processing a substrate according to an embodiment of the present disclosure. [Figure 6] This figure shows a method for determining the temperature of a substrate in a processing chamber according to an embodiment of the present disclosure. [Figure 7A-7C] Figure 5 is a schematic cross-sectional view of a part of a substrate showing various embodiments of the method described therein. [Modes for carrying out the invention]

[0011] For ease of understanding, the same reference numerals are used, where possible, to designate identical elements common to the figures. Elements and features of one embodiment are intended to be usefully incorporated into other embodiments without further detail.

[0012] This disclosure is directed to apparatus and methods for enabling a chemical vapor deposition (CVD) chamber (also referred herein as a processing chamber or chamber) to process a substrate (also referred herein as a wafer) at different temperatures. Enabling a CVD chamber to process a substrate at different temperatures improves the coating of the nucleation process on the substrate and improves the production rate (i.e., throughput) of the chamber. In the embodiments described herein, the substrate is supported at a first distance from the chamber's heater. The heater can be incorporated into the substrate support. The first distance is determined based on a first temperature of the substrate. The first temperature can be a temperature at which the nucleation process results in good coating of the substrate (e.g., 300°C). The nucleation process is then performed on the substrate. During the nucleation process, a shadowing is positioned on the surface of the substrate. After the nucleation process has been performed on the substrate, the substrate support and / or the substrate can be moved so that the substrate is at a second distance from the heater (e.g., 0 mm, where the substrate rests on the substrate support). The substrate is heated by a heater within the substrate support to a second temperature (e.g., 450°C), at which point a bulk process deposits tungsten with low internal stress onto the substrate. The shadowing is lowered close to the surface of the substrate before the bulk process is performed. The bulk process can then be performed on the substrate. It is beneficial to perform the nucleation process at a first temperature and the bulk process at a second temperature within the processing chamber, resulting in both the nucleation and bulk processes achieving good results and the substrate processing being faster than if the nucleation and bulk processes were performed in separate chambers. It is beneficial to support the substrate at a first distance from the substrate support during the nucleation process, as the temperature of the substrate support changes slowly due to the thermal mass of the substrate support, thus allowing the substrate to reach a first temperature different from the substrate support temperature (rather than changing the substrate support temperature from the first to the second temperature). It is beneficial to support the shadowing above the surface of the substrate during the nucleation process, allowing the nucleation process to take place near the bevel edge of the substrate and preventing the shadowing from contaminating the front surface of the substrate.

[0013] As discussed herein, the temperature of a substrate in a processing chamber can be determined by collecting electromagnetic radiation (e.g., visible or infrared (IR) light) from the substrate using a light pipe and transmitting the electromagnetic radiation to a pyrometer controller via an optical waveguide (e.g., optical fiber). The transmittance of the light pipe may change over time, for example, due to vapor deposition occurring at the end of the light pipe in the CVD chamber. A method for determining the substrate temperature may include estimating the temperature of the substrate support based on the electromagnetic radiation collected from the substrate support by the light pipe, and comparing the estimated temperature of the substrate support with the temperature of the substrate support sensed by a sensor (e.g., thermocouple or resistance temperature detector (RTD)) within the substrate support.

[0014] Figures 1 and 2 schematically show one embodiment of a processing system 100 that can be used to process the substrate 130. A tungsten deposition process, such as a bottom-up tungsten gap-filling substrate process, may be an example of the process described herein. Here, the processing system 100 is configured to provide different processing conditions desirable for each of the nucleation process and the tungsten bulk deposition process, within a single processing chamber 102, i.e., without transferring the substrate 130 between multiple processing chambers.

[0015] The processing system 100 includes a processing chamber 102, a gas supply system 104 fluidly coupled to the processing chamber 102, and a system controller 108. The processing chamber 102 includes a chamber lid assembly 110, one or more side walls 112, and a chamber body 114, which together define a processing volume section 115. The processing volume section 115 is fluidly coupled to an exhaust section 117, which includes one or more vacuum pumps used to maintain the processing volume section 115 under near-atmospheric pressure conditions and to discharge processing gases and processing by-products therefrom.

[0016] Figure 1 schematically shows the substrate 130, substrate lift pins 167, shadow ring 135, and shadow ring lift pins 167 in a first position. When the substrate 130, substrate lift pins 167, shadow ring 135, and shadow ring lift pins 167 are in the first position, the substrate 130 can be supported by the substrate lift pins 167 at a second distance D2 from the substrate support 122 (as shown in Figure 1). The second distance D2 can be determined based on the substrate 130 being heated to a first temperature (e.g., 300°C). When in the first position, the shadow ring 135 can be supported by the substrate lift pins slightly above the substrate 130, so that the substrate 130 does not come into contact with the shadow ring 135. When in the first position, the bottom surface of the shadow ring 135 can be about 0.25 mm to 0.5 mm or about 0.3 mm to 0.35 mm above the top surface of the substrate 130.

[0017] The chamber lid assembly 110 includes a lid plate 116 and a shower head 118 coupled to the lid plate 116, which together define a gas distribution volume 119. The shower head 118 faces a substrate support assembly 120 located in the processing volume 115. As will be discussed below, the substrate support assembly 120 is configured to move the substrate support 122, and therefore the substrate 130 located on the substrate support 122, between a raised substrate processing position (as shown in Figure 2) and a lowered substrate transport position (similar to the first position shown in Figure 1, but the substrate 130 cannot be transported while the substrate lift pin 167 is raised as shown). When the substrate support assembly 120 is in the raised substrate processing position, the shower head 118 and the substrate support 122 define a processing region 121.

[0018] The gas supply system 104 is fluidically coupled to the processing chamber 102 via a gas inlet located through the lid plate 116. The processing gas or cleaning gas supplied by using the gas supply system 104 flows through the gas inlet 123 into the gas distribution volume section 119 and is distributed to the processing area 121 through multiple openings in the shower head 118.

[0019] Here, the processing gas and processing by-products are discharged radially outward from the processing region 121 through an annular channel 126 surrounding the processing region 121. The annular channel 126 may be formed in a first annular liner 127 positioned radially inward of one or more sidewalls 112 (as shown in the figure), or it may be formed in one or more sidewalls 112. In some embodiments, the processing chamber 102 includes one or more second liners 128 used to protect the inner surface of one or more sidewalls 112 or the chamber body 114 from corrosive gases and / or undesirable material deposits.

[0020] In some embodiments, a purge gas source 137, fluidly connected to the processing volume 115, is used to flow a chemically inert purge gas, such as argon (Ar), into a region located directly beneath the substrate support 122, for example, through an opening in the chamber body 114 surrounding the movable support shaft 162 of the substrate support 122. The purge gas can be used to create a region of positive pressure (compared to the pressure in the processing area 121) beneath the substrate support 122 during substrate processing. Generally, the purge gas flows through the chamber body 114 and upward from there, around the edges of the substrate support 122, and is discharged from the processing volume 115 through annular channels 126. The purge gas reduces unwanted material deposition on the surface directly beneath the substrate support 122 by reducing and / or preventing the flow of material precursor gas to that area.

[0021] Here, the substrate support assembly 120 includes a movable support shaft 162 that extends hermetically through the chamber body 114, such as one surrounded by a bellows 165 in the region below the chamber body 114, and a substrate support 122 disposed on the movable support shaft 162. To facilitate the transfer of substrates to and from the substrate support 122, the substrate support assembly 120 includes a lift pin assembly 166 that includes a plurality of substrate lift pins 167 coupled to or engaged with a lift hoop 168. The plurality of substrate lift pins 167 are movably disposed in openings formed through the substrate support 122.

[0022] When the substrate support 122 is disposed at a lowered substrate transfer position (similar to the first position shown in FIG. 1), the plurality of substrate lift pins 167 extend above the substrate receiving surface 124 (also referred to herein as the upper surface) of the substrate support 122 to lift the substrate 130 therefrom and enable access to the (inactive) surface on the back side of the substrate 130 by a substrate handler (not shown). When the substrate support 122 is in the first position (e.g., the nucleation process position as shown in FIG. 1), the plurality of substrate lift pins 167 are raised above the upper surface 124 of the substrate support 122 to enable the substrate 130 to rest on the substrate lift pins 167.

[0023] A plurality of substrate lift pins 167 can be raised and lowered by a lift pin actuator 170. The lift pin actuator 170 can be a motor or other actuator such as a stepping motor, a servo motor, or a direct drive motor. In some embodiments, the lift pin actuator 170 is electrically coupled to a system controller such as the system controller 108. The lift pin actuator 170 can be coupled to the lift pin assembly via one or more pin lift shafts 173. The pin lift shaft 173 can be coupled to the lift hoop 168. In the embodiments described herein, the lift hoop 168 can be a plate or disk supported by one or more pin lift shafts 173 and configured to support at least the lift pin assembly 166.

[0024] When the substrate support 122 is in the transfer position, the substrate 130 can be selectively transferred into and out of the substrate support 122 through one or more openings 188, such as slit valves, disposed in one of the one or more sidewalls 112. Here, one or more openings within the region surrounding the door 171, for example, the opening of the door housing, are fluidly coupled to a purge gas source 137. The purge gas is used to prevent the process gas and the cleaning gas from contacting the seal surrounding the door and / or from deteriorating the seal surrounding the door, thereby extending the service life of the door.

[0025] The substrate support 122 is configured for use as a vacuum chuck, in which the substrate 130 is secured to the substrate support 122 by applying a vacuum to the interface between the substrate 130 and the substrate receiving surface 124. The vacuum is applied by using a vacuum source 172 fluidly coupled to one or more channels 174 in a support shaft 162. The channels 174 may be connected to channels or ports formed in the substrate receiving surface 124 of the substrate support 122. In other embodiments, for example, if the processing chamber 102 is configured for direct plasma processing, the substrate support 122 may be configured for use as an electrostatic chuck. In some embodiments, the substrate support 122 includes one or more electrodes (not shown) coupled to a bias voltage power supply (not shown), such as a continuous-wave (CW) RF power supply or a pulsed RF power supply, which supplies a bias voltage to it.

[0026] As shown in the figure, the substrate support assembly 120 includes a heater 163. The substrate support assembly 120 may further include a temperature sensor 192 (e.g., a thermocouple or RTD) that can supply temperature readings of the upper surface of the substrate support 122 to a controller such as a system controller 108.

[0027] The substrate support assembly 120 further includes a shadowing ring 135 which can be used to prevent undesirable material deposition on the circumferential bevel edge of the substrate 130 during processing (e.g., bulk processing as discussed herein) when the substrate 130 is positioned on the substrate support 122 (as shown in Figure 2). During substrate transfer to and from the substrate support 122, the substrate support assembly 120 is positioned in a lowered position (similar to the first position shown in Figure 1). When the substrate support assembly 120 is positioned in an elevated or second processing position (e.g., bulk processing position as shown in Figure 2), the radially outer surface of the substrate support 122 engages with the shadowing ring 135 such that the shadowing ring surrounds the substrate 130 positioned on the substrate support 122. Here, the shadow ring 135 is shaped such that when the substrate support assembly 120 is in the second processing position, the portion of the shadow ring 135 facing radially inward is positioned on the bevel edge of the substrate 130.

[0028] In some embodiments, the substrate support assembly 120 further includes a purge ring 136 positioned on the substrate support 122 so as to surround the substrate 130. In those embodiments, a shadow ring 135 may be positioned on the purge ring 136 when the substrate support assembly 120 is in a second processing position. Generally, the purge ring 136 features a plurality of radially inward-facing openings fluidly connected to a purge gas source 137. During substrate processing, the purge gas flows into an annular region defined by the shadow ring 135, the purge ring 136, the substrate support 122, and the bevel edge of the substrate 130, preventing the processing gas from entering the annular region and causing undesirable material deposition on the bevel edge of the substrate 130.

[0029] In some embodiments, the processing chamber 102 is configured for direct plasma processing. In those embodiments, the showerhead 118 is electrically coupled to a first power supply 131, such as an RF power supply, which supplies power to ignite and maintain the plasma of the processing gas flowing into the processing area 121 via capacitive coupling with the processing gas. In some embodiments, the processing chamber 102 includes an inductive plasma generator (not shown), the plasma being formed by inductively coupling RF power to the processing gas.

[0030] Here, the processing system 100 may be configured to perform void-free and seam-free tungsten gap-filling process tungsten nucleation and bulk tungsten deposition processes, respectively, without removing the substrate 130 from the processing chamber 102. The gas used to perform the individual processes of the gap-filling process and to clean residues from the internal surface of the processing chamber is supplied to the processing chamber 102 using a gas supply system 104 that is fluidly coupled to it.

[0031] Generally, the gas supply system 104 includes one or more remote plasma sources, hereby first and second radical generators 106A-106B, a deposition gas source 140, and a conduit system 194 that fluidly connects the radical generators 106A-106B and the deposition gas source 140 to the chamber lid assembly 110. The gas supply system 104 further includes a number of isolation valves, hereby first and second valves 190A-190B, respectively, positioned between the radical generators 106A-106B and the lid plate 116, which can be used to fluidly separate each of the radical generators 106A-106B from the processing chamber 102 and from each other.

[0032] Each of the radical generators 106A to 106B is coupled to its respective power supply 193A to 193B. The power supplies 193A to 193B are used to ignite and maintain the plasma of the gas supplied to the plasma chamber volume in the radical generators 106A to 106B from the corresponding first gas source 187A or second gas source 187B, which is fluidically coupled to the plasma chamber volume in the radical generators 106A to 106B. In some embodiments, the first radical generator 106A generates radicals used in a differential suppression process. For example, the first radical generator 106A can be used to ignite and maintain a processing plasma from a non-halogen-containing mixed gas supplied from the first gas source 187A to the first plasma chamber volume. The second radical generator 106B can be used to generate cleaning radicals used in a chamber cleaning process by igniting and maintaining a cleaning plasma from a halogen-containing mixed gas supplied from the second gas source 187B to the second plasma chamber volume.

[0033] In some embodiments, the first radical generator 106A is also fluidically coupled to a second gas source 187B, which can supply a halogen-containing conditioning gas to the first plasma chamber volume for use in the plasma source condition process. In those embodiments, the gas supply system 104 may further include a plurality of diverter valves 191 that can operate to guide the halogen-containing mixed gas from the second gas source 187B to the first plasma chamber volume of the radical generator 106A.

[0034] Suitable remote plasma sources that can be used with one or both of the radical generators 106A-106B include radio frequency (RF) or very high frequency (VHRF) capacitively coupled plasma (CCP) sources, inductively coupled plasma (ICP) sources, microwave-inductive (MW) plasma sources, electron cyclotron resonance (ECR) chambers, or high-density plasma (HDP) chambers.

[0035] The operation of the processing system 100 is facilitated by a system controller 108. The system controller 108 includes a programmable central processing unit, here a CPU 195, which is operable by memory 196 (e.g., non-volatile memory) and support circuitry 197. The CPU 195 is one of any form of general-purpose computer processor used in industrial environments, such as a logic control unit (PLC) that can be programmed to control various chamber components and subprocessors. Memory 196 coupled to the CPU 195 facilitates the operation of the processing chamber. Support circuitry 197 conventionally includes caches, clock circuits, input / output subsystems, power supplies, etc., and combinations thereof, coupled to the CPU 195 and various components of the processing system 100 to facilitate control of board processing operations.

[0036] Here, the instructions in memory 196 are in the form of a program product, such as a program that implements the method of the present disclosure. In one example, the present disclosure may be implemented as a program product stored on a computer-readable storage medium for use in a computer system. The program of the program product defines the function of the embodiment (including the method of the present specification). Thus, a computer-readable storage medium is an embodiment of the present disclosure if it holds computer-readable instructions that direct the function of the method of the present specification.

[0037] Advantageously, the processing system 100 described above can be used to carry out nucleation and bulk deposition processes, respectively, thereby providing a single-chamber, seam-free tungsten gap-filling solution.

[0038] In some embodiments, when the substrate 130 is in either a first position (e.g., nucleation process position) as shown in Figure 1 or a second position (e.g., bulk deposition process position) as shown in Figure 2, the first distance D1 between the bottom surface of the showerhead 118 and the top surface of the substrate 130 is less than about 25 mm, for example less than about 20 mm, for example less than about 15 mm, for example about 5 mm to about 15 mm.

[0039] The processing system 100 includes a shadowing lift assembly 180. The shadowing lift assembly 180 is integrated with a lift pin assembly 166, so that the lift hoop 168 can be detachably coupled to both a plurality of substrate lift pins 167 and a plurality of shadowing lift pins 181. The shadowing lift assembly 180 is configured to raise and lower the shadowing 135 between or during processing steps. Both the shadowing 135 and the substrate lift pins 167 can be raised and lowered simultaneously or separately, as described herein.

[0040] As shown in Figure 1, the shadowing lift assembly 180 includes a lift hoop 168, a lift pin assembly 166, a shadowing lift pin 181, a shadowing lift plate 186, one or more shadowing lift arms 182 extending from the shadowing lift plate 186, and a plurality of substrate lift pin holders 183 extending through the shadowing lift plate 186. The plurality of substrate lift pin holders 183 are openings that pass through the shadowing lift plate 186 and include side walls extending downward from the shadowing lift plate 186 to provide guides for the substrate lift pins 167.

[0041] The bottom surface of each substrate lift pin holder 183 is coupled to the lift hoop 168 and positioned above the lift hoop 168. In some embodiments, the substrate lift pin holder 183 is positioned through the lift hoop 168, forming an opening through the lift hoop 168. In some embodiments, the substrate lift pin holder 183 is positioned both partially above and partially below the lift hoop 168, resulting in the substrate lift pin holder 183 being a shaft positioned through the lift hoop 168. The substrate lift pin holder 183 may be mechanically coupled to each of the shadowing lift arms 182. The shadowing lift arms 182 extend outward from the shadowing lift plate 186 and couple the shadowing lift pins 181 to the shadowing lift plate 186 and the substrate lift pin holder 183, subsequently allowing the movement of the shadowing lift pins 181 as the lift hoop 168 moves in upward and downward movements.

[0042] The lift hoop 168 can be coupled to one or more pin lift shafts 173 and lift pin actuators 170 to allow vertical movement of the lift hoop 168. The lift hoop 168 can then provide movement to one or both of the lift pin assembly 166 or the shadowing lift assembly 180. The lift pin actuator 170 can be a motor or a pneumatic actuator. The system controller 108 can control the lift pin actuator 170 to position the lift hoop 168, substrate lift pins 167, shadowing lift pins 181, and substrate lift pin holders 183, as described with reference to Figures 1 and 2. In some embodiments, the shadowing lift plate 186 is coupled to the lift hoop 168 and positioned on the lift hoop 168, and the bottom surfaces of each of the substrate lift pin holders 183 do not contact the lift hoop 168.

[0043] The lift pin assembly 166 includes a lift pin base 185 coupled to each lift pin 167. The lift pins 167 are configured to extend through a portion of the substrate support 122 and contact the back side of the substrate 130. The lift pins 167 are configured to rest on slots located within the substrate support 122. The bottom distal end of the lift pin 167 is coupled to the lift pin base 185. The lift pin base 185 can be a cylindrical base and is configured to have a diameter substantially similar to that of each hollow inner surface 184 of the substrate lift pin holder 183. Each of the substrate lift pin holders 183 has a hollow inner surface 184 through which the lift pin base 185 can move. In one embodiment, the substrate lift pin holder 183 surrounds the entire perimeter of the lift pin base 185. In other embodiments, the substrate lift pin holder 183 surrounds the perimeter of the lift pin base 185.

[0044] The substrate processing system includes an opening 188 positioned through the side of the processing chamber 102. The opening 188 may include a slit valve or door 171 positioned therein. Although not evident from Figures 1 and 2, it should be noted that the shadowing lift pin 181 is offset from the opening 188 to allow the substrate 130 to move in and out of the processing chamber 102.

[0045] While in the substrate transfer position, the lift hoop 168 contacts the lift pin base 185 and the substrate lift pin holder 183. The lift hoop 168 is a ring connected to one or more pin lift shafts 173 and is used as a base for lifting the substrate and the shadow ring 135. While in the substrate transfer position, the first distance D1 between the bottom surface of the shower head 118 and the top surface of the substrate support 122 is about 40 mm to about 80 mm, for example about 50 mm to about 70 mm, for example about 55 mm to about 65 mm. While in the substrate transfer position, the tops of the shadow ring 135 and the shadow ring lift pins 181 can be in various positions above the substrate support 122 and the substrate 130. As described herein, the height of the shadow ring 135 depends at least in part on the position of the substrate lift pins 167 while transferring the substrate 130 in and out of the processing area 121.

[0046] While in the substrate transfer position, the shadowing lift pins 181 contact the bottom surface of the shadowing 135. Each of the shadowing lift pins 181 is positioned radially outward of the substrate 130 and is obtusely positioned around the substrate support 122 so as to allow the substrate 130 to pass between them and enter the opening 188 during substrate transfer.

[0047] As shown in Figure 2, the shadowing lift assembly 180 and the lift pin assembly 166 are in the second position. While in the second position, the lift hoop 168 is in a position where the shadowing ring 135 is supported by the purge ring 136 above the shadowing lift pin 181, while the substrate lift pin 167 is in the lowered position. The lowered position of the substrate lift pin 167 is a position where the top of the substrate lift pin 167 is at the same height as or below the substrate support surface and the substrate 130. The substrate support 122 is in the raised position while in the second position such that the substrate receiving surface 124 of the substrate support 122 is at a second distance D1 from the bottom surface of the shower head 118. While in the second position, the second distance D1 is less than about 25 mm, for example less than about 20 mm, for example less than about 15 mm, for example about 10 mm to about 15 mm.

[0048] While in the second position, as shown in Figure 2, the substrate lift pin 167 is freely suspended from the substrate support 122, and as a result, the lift pin base 185 does not contact the upper surface of the lift hoop 168, but is still positioned within the hollow inner surface 184 of the substrate lift pin holder 183. A gap can be provided between the lift pin base 185 and the lift hoop 168, and as a result, the substrate lift pin 167 is at least partially positioned within the substrate lift pin holder 183 but is not mechanically supported by the lift hoop 168.

[0049] As shown in Figure 2, both the shadow ring 135 and the substrate lift pins 167 are shown in the second position, so that the shadow ring 135 is configured to protect the substrate 130 during the deposition process. The shadow ring 135 is in a lower position than the first position in Figure 1, so that the lift hoop 168 and the substrate lift pin holder 183 are lowered. The substrate lift pins 167 are hanging freely from the substrate support 122, as in the processing position in Figure 4B. The substrate lift pins 167 may not move while the shadow ring 135 is being lowered from the first position to the second position, or while the shadow ring 135 is being raised from the second position to the first position.

[0050] While in the second position, the shadowing lift pin 181 may still be in contact with the bottom of the shadowing ring 135, or it may be separated from the shadowing ring 135 (as shown in Figure 2). In some embodiments, the shadowing lift plate 186 and / or shadowing lift arm 182 are positioned on and in contact with the lower wall 189 of the chamber body 114 while in the second position. By contacting the lower wall 189 of the chamber body 114, the shadowing lift plate 186 can engage with and disengage from the lift hoop 168.

[0051] The positioning of the shadowing lift plate 186, the lift hoop 168, and the lift pin base 185 can be adjusted for the lengths of the substrate lift pins 167 and the shadowing lift pins 181, as well as for a desired second distance D2 between processing and deposition on the substrate 130.

[0052] Referring back to Figure 1, during processing of the substrate 130 within the processing system 100, the substrate 130 may be supported by substrate lift pins 167 at a second distance D2 from the substrate support 122 (as shown in Figure 1). The second distance D2 can be determined based on the substrate 130 being heated to a first temperature (e.g., 300°C). The shower head 118 and lid plate 116 may be maintained at a temperature lower than the temperature of the substrate support 122 (e.g., 450°C) (e.g., 80-100°C), and the substrate 130 may be heated to and maintained at the first temperature as a result of radiant heat transfer from the substrate support 122 to the substrate 130 and from the substrate 130 to the shower head 118. The temperature of the substrate 130 may be determined based on electromagnetic radiation (e.g., IR rays) from the substrate 130 collected by the light pipe assembly 300 shown in Figure 3.

[0053] While the substrate 130 is being processed, supported by substrate lift pins 167 as shown in Figure 1, a purge gas may be supplied from a purge gas source 137 to a channel 174, and from the channel 174 to a port or channel on the upper surface of the substrate support 122, as shown in Figure 4. The purge gas may act to prevent the process gas (also referred to herein as precursor, deposition gas, and processing gas) supplied via the showerhead 118 (i.e., from above the substrate) from coming into contact with and reacting with the back surface of the substrate 130.

[0054] Figure 2 shows a substrate 130 at a second distance D2 (e.g., 0 mm) from the substrate support surface 124 of the substrate support 122 within the processing system 100. As shown in Figure 2, when the substrate 130 is at the second distance D2 from the substrate support surface 124, the lift pin 167 can be retracted directly below the substrate support surface 124 to allow the substrate 130 to rest on the substrate support surface. The second distance D2 can be determined based on the substrate 130 being heated to a second temperature (e.g., 450°C). As shown in Figure 1, the shower head 118 and lid plate 116 can be maintained at a temperature lower than the temperature of the substrate support 122 (e.g., 450°C) (e.g., 80-100°C). The substrate 130 can be heated to and maintained at the second temperature as a result of radiant heat transfer from the substrate support 122 to the substrate 130, conductive heat transfer from the substrate support 122 to the substrate 130, and radiant heat transfer from the substrate 130 to the shower head 118. The temperature of the substrate 130 may be determined based on electromagnetic radiation (e.g., IR rays) from the substrate 130 collected by the light pipe assembly 300 shown in Figure 3.

[0055] Figure 3 schematically shows a light pipe assembly 300 within the processing system 100. The light pipe assembly 300 includes a light pipe support 302, a light pipe support seal 304, a light pipe 306, a light pipe seal 308, and an optical waveguide plug 310. The light pipe support 302 is attached to the lid plate 116 of the processing system 100 (e.g., by screws). The light pipe support 302 has an elongated central structure that is installed through through holes in the lid plate 116, the perforated blocker plate 125 (if present), and the shower head 118. The light pipe support 302 has through holes in the elongated structure into which the light pipe 306 is installed. Thus, one end of the light pipe 306 is exposed to the inside of the processing chamber 102. The other end of the light pipe 306 is exposed to the outside of the processing chamber 102. The light pipe 306 is made of a material that is semi-transparent to most IR and optical wavelengths of light. The optical waveguide plug 310 is installed on the light pipe support 302 above the end of the light pipe 306 that is exposed to the outside of the processing chamber 102. The light pipe support seal 304 is installed below the light pipe support 302 and is compressed between the light pipe support 302 and the lid plate 116 to prevent gas from leaking below the light pipe support 302 and into or out of the processing chamber 102. The light pipe seal 308 is installed around the light pipe 306 where the light pipe 306 exits the processing chamber 102 from the light pipe support 302. The light pipe seal 308 can prevent gas from leaking into or out of the processing chamber 102 through the through-hole in the light pipe support 302. The optical waveguide plug 310 is configured to allow the optical waveguide 352 (e.g., an optical fiber) to be connected to the light pipe 306 so that electromagnetic radiation (e.g., light) from inside the processing chamber 102 can be transmitted to the pyrometer controller 350.The pyrometer controller 350 receives electromagnetic radiation transmitted by the optical waveguide 352 and determines the temperature of the substrate 130 shown in Figures 1 and 2, the substrate support 122 shown in Figures 1 and 2, or several other items within the field of view of the light pipe 306 (i.e., inside the processing chamber 102). The pyrometer controller 350 can send a signal indicating the detected temperature to the system controller 108 of the processing system 100.

[0056] In embodiments of this disclosure, components of the CVD chamber (e.g., processing chamber 102) may be covered or become covered with substrate gas emissions and process residues. Such covering may interfere with the collection of electromagnetic radiation from inside the processing chamber 102 by the light pipe 306.

[0057] In embodiments of this disclosure, a controller (e.g., a system controller 108, a pyrometer controller 350, or a combination thereof) can estimate the transmission loss of the light pipe 306 based on the radiated signal to the controller and accurate temperature measurements. The estimated transmission loss can then be used by the controller to determine the temperature measurement of the substrate 130 in the processing chamber 102.

[0058] For example, a controller (e.g., a system controller 108, a pyrometer controller 350, or a combination thereof) can estimate the temperature of the substrate receiving surface 124 of the heater 163 and / or substrate support 122 based on the electromagnetic radiation collected by the light pipe 306, and compare the estimated temperature with a measured temperature of the heater 163 and / or substrate receiving surface 124 of the substrate support 122 taken by a temperature sensor 192 in the substrate support 122. Based on the comparison of the estimated temperature and the measured temperature, the controller can estimate the transmission loss of the light pipe 306.

[0059] In embodiments of this disclosure, an operator or controller (e.g., a system controller 108, a high-temperature controller 350, or a combination thereof) can execute the following algorithm. 1. When the light pipe 306 is not exposed to process gas (e.g., when the light pipe 306 is newly installed and / or in its initial state), the temperature of the heater 163 or the substrate support surface 124 is measured based on the electromagnetic radiation collected by the light pipe 306 (e.g., using a pyrometer). 2. Calculate the effective emissivity εe of the heater 163 or the substrate receiving surface 124 based on the measured temperature. 3. During processing in the processing system 100, before each substrate 130 is transferred to the processing chamber 102, a. Based on the electromagnetic radiation collected by the light pipe 306, estimate the temperature of the heater 163 or the substrate support surface 124 (e.g., using a pyrometer). b. Sensing the temperature of the heater 163 or the substrate receiving surface 124 (for example, using a temperature sensor 192), c. Based on the comparison of the estimated temperature and the sensed temperature, calculate the new effective emissivity εe' of the heater 163 or the substrate receiving surface 124. d. Calculate the transmittance μ of the light pipe 306 using μ = εe' / εe. 4. During processing in the processing system 100, after each substrate 130 has been transferred to the processing chamber 102, and before the substrate 130 is removed from the processing chamber, a. Estimate the temperature of the substrate 130 based on the electromagnetic radiation collected by the light pipe 306 (for example, using a pyrometer), b. The temperature of the substrate 130 is determined based on the estimated temperature and the calculated transmittance μ of the light pipe 306. In embodiments of this disclosure, if it is desirable for the operator or controller to perform a number of processing steps at different temperatures of the substrate 130, step #4 of the algorithm described above may be repeated a number of times.

[0060] Figure 4 schematically shows the substrate support 122 within the processing system 100. As shown in Figure 4, the substrate 130 is in a first position, similar to the substrate 130 shown in Figure 1. As previously mentioned, when the substrate is in the first position and processing is being carried out in the processing chamber 102, purge gas (indicated by arrows in Figure 4) can be supplied from the purge gas source 137 through the channel 174 to a port or channel on the substrate receiving surface 124 of the substrate support 122. When purge gas is supplied to the channel 174, the system controller 108 (not shown in Figure 4, see Figures 1-2) closes valve 175 and opens valve 177 to allow the purge gas to flow into the channel 174. When the substrate 130 is to be vacuum chucked to the substrate support 122, the system controller closes valve 177 and opens valve 175 to supply vacuum to the channel 174, allowing the substrate 130 to be vacuum chucked to the substrate support 122.

[0061] Figure 5 is a flowchart of a method 500 for processing a substrate such as the substrate 130 described herein. An operator or controller (e.g., the system controller 108 in Figures 1 and 2) can control each step of this method.

[0062] Step 502 includes supporting the substrate at a first distance from the heater of the processing chamber, the first distance being based on a first temperature of the substrate. For example, referring to Figure 1, an operator or controller (e.g., system controller 108 in Figures 1-2) moves the substrate lift pin 167 to support the substrate 130 at a first distance (e.g., D2 in Figure 1) from the heater 163 of the processing chamber 102, the first distance being based on a first temperature of the substrate 130 (e.g., 300°C).

[0063] Step 504 includes performing a nucleation process on the substrate in the processing chamber while the substrate is at a first temperature. Continuing from the example above, an operator or controller (e.g., system controller 108 from Figures 1-2) causes the processing system 100 to perform a nucleation process on the substrate 130 in the processing chamber 102.

[0064] Step 506 includes supporting the substrate at a second distance from the heater, the second distance being based on a second temperature of the substrate. Continuing the example above, an operator or controller (e.g., system controller 108 in Figures 1-2) causes the substrate support 122 to support the substrate 130 at a second distance from the heater 163 (e.g., D2 in Figure 2) (e.g., by raising the substrate support 122 on the support shaft 162 and lowering the lift hoop 168 on the lift pin actuator 170), the second distance being based on a second temperature of the substrate 130 (e.g., 450°C).

[0065] Step 508 includes performing a bulk process on the substrate in the processing chamber while the substrate is at a second temperature. Continuing from the example above, an operator or controller (e.g., system controller 108 from Figures 1-2) causes the processing system 100 to perform a bulk process on the substrate 130 in the processing chamber 102 while the substrate 130 is at a second temperature (e.g., 450°C).

[0066] In some embodiments, the second distance is 0 millimeters (mm), and the second temperature of the substrate is approximately equal to the temperature of the heater.

[0067] In some embodiments, Method 500 further includes using one or more shadowing lift pins to support the shadowing of the processing chamber above the substrate while the nucleation process is performed on the substrate.

[0068] In some embodiments, the first temperature is between 285°C and 315°C.

[0069] In some embodiments, the first temperature is between 298°C and 302°C.

[0070] In some embodiments, the second temperature is between 435°C and 465°C.

[0071] In some embodiments, the second temperature is between 448°C and 452°C.

[0072] In some embodiments, method 500 further includes supporting the purge ring with a heater. In one embodiment, method 500 further includes supporting the shadowing of the processing chamber with the purge ring while performing a bulk process.

[0073] Figure 6 is a flowchart of a method 600 for determining the temperature of a substrate, such as a substrate 130, in a processing chamber, such as a processing chamber 102, as described in this disclosure. An operator or controller (e.g., the system controller 108 in Figures 1 and 2) can control each step of this method.

[0074] Step 602 includes using a light pipe to collect electromagnetic radiation from the upper surface of the substrate support placed in the processing chamber. For example, referring to Figures 1 to 3, an operator or controller (e.g., the system controller 108 in Figures 1 to 2, the pyrometer controller 350 in Figure 3, or a combination thereof) uses a light pipe 306 to collect electromagnetic radiation (e.g., visible light and / or IR light) from the upper surface of the substrate support 122 (e.g., the substrate receiving surface 124 in Figures 1 to 2) placed in the processing chamber 102.

[0075] Step 604 includes sensing the temperature of the upper surface of the substrate support using a temperature sensor within the substrate support. Continuing from the above example, an operator or controller (e.g., the system controller 108 from Figures 1-2, the pyrometer controller 350 in Figure 3, or a combination thereof) senses the temperature (e.g., 450°C) of the upper surface of the substrate support 122 (e.g., the substrate receiving surface 124 in Figures 1-2) using a temperature sensor 192 within the substrate support 122.

[0076] Step 606 includes estimating the temperature of the upper surface of the substrate support based on electromagnetic radiation collected from the upper surface of the substrate support by the light pipe. Continuing the example above, an operator or controller (e.g., the system controller 108 in Figures 1-2, the pyrometer controller 350 in Figure 3, or a combination thereof) estimates the temperature (e.g., 450°C) of the upper surface of the substrate support 122 (e.g., the substrate support surface 124 in Figures 1-2) based on electromagnetic radiation collected from the upper surface of the substrate support 122 (e.g., the substrate support surface 124 in Figures 1-2) by the light pipe 306.

[0077] Step 608 includes determining the transmittance of the light pipe based on a comparison of the estimated temperature of the upper surface of the substrate support with the sensed temperature of the upper surface of the substrate support. Continuing from the examples above, an operator or controller (e.g., system controller 108 from Figures 1-2, pyrometer controller 350 in Figure 3, or a combination thereof) determines the transmittance of the light pipe 306 (e.g., 1.0) based on a comparison of the estimated temperature (e.g., 450°C) of the upper surface of the substrate support 122 (e.g., substrate receiving surface 124 in Figures 1-2) with the sensed temperature (e.g., 450°C) of the upper surface of the substrate support 122 (e.g., substrate receiving surface 124 in Figures 1-2).

[0078] Step 610 includes collecting electromagnetic radiation from the substrate in the processing chamber using a light pipe. Continuing from the examples above, an operator or controller (e.g., the system controller 108 in Figures 1-2, the pyrometer controller 350 in Figure 3, or a combination thereof) collects electromagnetic radiation (e.g., visible light and / or IR light) from the substrate 130 in the processing chamber 102 using a light pipe 306.

[0079] Step 612 includes determining the temperature of the substrate based on the electromagnetic radiation collected from the substrate by the light pipe and its transmittance. Continuing from the example above, an operator or controller (e.g., system controller 108 from Figures 1-2, pyrometer controller 350 from Figure 3, or a combination thereof) determines the temperature of the substrate 130 (e.g., 300°C) based on the electromagnetic radiation (e.g., visible light and / or IR light) collected from the substrate 130 by the light pipe 306 and its transmittance (e.g., 1.0).

[0080] Figure 7A schematically shows a portion of an exemplary substrate 700 on which a nucleation layer 704 is formed. The exemplary substrate 700 may be an example of the substrate 130 shown in Figures 1, 2, and 4. The substrate 700 features a patterned surface 701 including a dielectric material layer 702 having a plurality of openings 705 (one shown) formed thereon. In some embodiments, the plurality of openings 705 include one or a combination of high aspect ratio via or trench openings having a width of about 1 μm or less, e.g., about 800 nm or less or about 500 nm or less, and a depth of about 2 μm or more, e.g., about 3 μm or more or about 4 μm or more. In some embodiments, individual openings 705 may have an aspect ratio (depth-to-width ratio) of about 5:1 or more, e.g., about 10:1 or more, about 15:1 or more, or between about 10:1 and about 40:1, e.g., between about 15:1 and about 40:1. As shown in the figure, the patterned surface 701 conformally lines the opening 705 and includes a barrier or adhesive layer 703 (e.g., a titanium nitride (TiN) layer) deposited on the dielectric material layer 702 to facilitate the subsequent deposition of the tungsten nucleation layer 704. In some embodiments, the adhesive layer 703 is deposited to a thickness between about 2 angstroms (Å) and about 100 Å.

[0081] In some embodiments, the adhesive layer 703 and the nucleating layer 704 may be deposited sequentially within the same processing chamber 102. In some embodiments, the adhesive layer 703 functions as a nucleating layer that allows for subsequent bulktungsten deposition on it.

[0082] In some embodiments, the nucleation layer 704 is deposited using an atomic layer deposition (ALD) process. Generally, the ALD process involves repeating cycles of alternately exposing the substrate 700 to a tungsten-containing precursor and the substrate 700 to a reducing agent, and purging the processing area 121 between alternating exposures. Examples of suitable tungsten-containing precursors (also referred herein as process gases or deposition gases) include tungsten halides such as tungsten hexafluoride (WF6), tungsten hexachloride (WCl6), or combinations thereof. Examples of suitable reducing agents include hydrogen gas (H2), borane, e.g., B2H6, and silane, e.g., SiH4, Si2H6, or combinations thereof. In some embodiments, the tungsten-containing precursor includes WF6, and the reducing agent includes B2H6, SiH4, or combinations thereof. In some embodiments, the tungsten-containing precursor includes organometallic precursors and / or fluorine-free precursors, such as MDNOW (methylcyclopentadienyl-dicarbonylnitrosyl-tungsten), EDNOW (ethylcyclopentadienyl-dicarbonylnitrosyl-tungsten), tungsten hexacarbonyl (W(CO)6), or combinations thereof.

[0083] During the nucleation process, the processing volume section 115 is generally maintained at a pressure of less than about 120 Torr, for example, between about 900 mTorr and about 120 Torr, between about 1 Torr and about 100 Torr, or for example, between about 1 Torr and about 50 Torr. Exposure of the substrate 700 to the tungsten-containing precursor includes flowing the tungsten-containing precursor from the deposition gas source 140 to the processing area 121 at a flow rate of more than about 10 sccm, for example, between about 10 sccm and about 1000 sccm, for example, between about 10 sccm and about 750 sccm, or between about 10 sccm and about 500 sccm. Exposure of the substrate 700 to the reducing agent includes flowing the reducing agent from the deposition gas source 140 to the processing area 121 at a flow rate of between about 10 sccm and about 1000 sccm, for example, between about 10 sccm and about 750 sccm. It should be noted that the flow rates for the various deposition and processing processes described herein are for processing system 100 configured to process substrates with a diameter of 300 mm. Appropriate scaling may be used in processing systems configured to process substrates of different sizes.

[0084] Here, the tungsten-containing precursor and the reducing agent are each passed through the processing area 121 for periods of approximately 0.1 seconds and approximately 10 seconds, for example, approximately 0.5 seconds and approximately 5 seconds. The processing area 121 can be purged between alternating exposures by passing an inert purge gas, such as argon (Ar), through the processing area 121 for periods of approximately 0.1 seconds and approximately 10 seconds, for example, approximately 0.5 seconds and approximately 5 seconds. The purge gas can be supplied from the deposition gas source 140 or the bypass gas source 138. Generally, the repetition of the nucleation process cycle continues until the nucleation layer 704 has a thickness of approximately 10 Å and approximately 200 Å, for example, approximately 10 Å and approximately 150 Å, or approximately 20 Å and approximately 150 Å. If a shadowing adjacent to the substrate 700 (e.g., shadowing 135) is present, the deposition rate near the bevel edge of the substrate 700 may be reduced.

[0085] The nucleating layer 704 may be treated to suppress tungsten deposition onto the field surface of the substrate 700 and to form differential suppression profiles within a plurality of openings 705 by using a differential suppression process. Generally, forming differential suppression profiles involves exposing the nucleating layer 704 to an activated nuclide of a treatment gas, e.g., a treatment radical 706 shown in Figure 7B. Suitable treatment gases that can be used in the suppression process include N2, H2, NH3, NH4, O2, CH4, or combinations thereof. In some embodiments, the treatment gas includes nitrogen such as N2, H2, NH3, NH4, or combinations thereof, and the activated nuclide includes nitrogen radicals, e.g., atomic nitrogen. In some embodiments, the treatment gas is combined with an inert carrier gas such as Ar, He, or combinations thereof to form a treatment mixed gas.

[0086] The activated nitrogen nuclide (treated radical 706) can be incorporated into a portion of the nucleation layer 704 by adsorption of the activated nitrogen nuclide and / or by reaction with metallic tungsten in the nucleation layer 704, thereby forming a tungsten nitride (WN) surface. The adsorbed nitrogen and / or nitrided surface of the tungsten nucleation layer 704 can delay (suppress) further tungsten nucleation, and therefore subsequent tungsten deposition thereon.

[0087] Generally, the diffusion of treated radicals 706 into multiple openings 705 can be controlled to produce a desired suppression gradient within the openings 705 of the feature area. Here, the diffusion of treated radicals 706 is controlled such that the tungsten growth suppression effect at the walls of the openings 705 decreases with increasing distance from the field of the patterned surface 701 (Figures 7B-7C). As a result, tungsten nucleation is more easily established at or near the bottom of the feature area, and once established, tungsten growth (deposition of gap-filling material 708) within the openings 705 is accelerated from the point of nucleation (e.g., from unsuppressed or low-suppression areas at the bottom of the openings 705), enabling bottom-up seamless tungsten gap-filling. The direction of the suppression gradient from high-suppression areas to unsuppressed or low-suppression areas is indicated by the arrow 717 shown in Figure 7C. The diffusion of the treated radicals 706 into the opening 705 generally depends at least in part on the size and aspect ratio of the opening 705 and, in particular, can be regulated by controlling the energy, flux, and, depending on the embodiment, the directionality of the treated radicals 706 on the patterned surface 701.

[0088] In some embodiments, exposing the nucleating layer 704 to the treatment radicals 706 includes forming a treatment plasma of substantially halogen-free treatment mixed gas using a first radical generator 106A and flowing the treatment plasma ejecta into a treatment area 121. In some embodiments, the flow rate of the treatment mixed gas to the first radical generator 106A, and therefore the flow rate of the treatment plasma ejecta into the treatment area 121, is between about 1 sccm and about 3000 sccm, for example, between about 1 sccm and about 2500 sccm, between about 1 sccm and about 2000 sccm, between about 1 sccm and about 1000 sccm, between about 1 sccm and about 500 sccm, between about 1 sccm and about 250 sccm, between about 1 sccm and about 100 sccm, or between about 1 sccm and about 75 sccm, for example, between about 1 sccm and about 50 sccm.

[0089] In some embodiments, the concentration of substantially halogen-free process gas in the process gas mixture is between about 0.5 vol% and about 50 vol%, for example between about 0.5 vol% and about 40 vol%, between about 0.5 vol% and about 30 vol%, between about 0.5 vol% and about 20 vol%, or, for example, between about 0.5 vol% and about 10 vol%, for example between about 0.5 vol% and about 5 vol%.

[0090] In some embodiments, for example, when the substantially halogen-free treatment gas contains N2, NH3, and / or NH4, the first radical generator 106A can be used to activate atomic nitrogen in amounts between approximately 0.02 mg and approximately 150 mg, for example, between approximately 0.02 mg and approximately 150 mg, or between approximately 0.02 mg and approximately 100 mg, or between approximately 0.1 mg and approximately 100 mg, or between approximately 0.1 mg and approximately 100 mg, or between approximately 1 mg and approximately 100 mg, during the suppression treatment process of a 300 mm diameter substrate. In some embodiments, the first radical generator 106A can be used to activate atomic nitrogen in amounts of approximately 0.02 mg or more, for example, approximately 0.2 mg or more, approximately 0.4 mg or more, approximately 0.6 mg or more, approximately 0.8 mg or more, approximately 1 mg or more, approximately 1.2 mg or more, approximately 1.4 mg or more, approximately 1.6 mg or more, approximately 1.8 mg or more, approximately 2 mg or more, approximately 2.2 mg or more, approximately 2.4 mg or more, approximately 2.6 mg or more, approximately 2.8 mg or more, or approximately 3 mg or more, during the suppression treatment process of a 300 mm diameter substrate. Appropriate scaling may be used in a processing system configured to process substrates of different sizes.

[0091] In other embodiments, the treatment radicals 706 can be formed using a remote plasma (not shown) that is ignited and maintained in a portion of the treatment volume section 115 separated from the treatment area 121 by the showerhead 118, for example, between the showerhead 118 and the lid plate 116. In those embodiments, the activated treatment gas can be passed through an ion filter before the treatment radicals 706 reach the surface of the treatment area 121 and the substrate 700 in order to remove substantially all ions from it. In some embodiments, the showerhead 118 may be used as an ion filter. In other embodiments, the plasma used to form the treatment radicals is an in-situ plasma formed in the treatment area 121 between the showerhead 118 and the substrate 700. In some embodiments, for example, when using an in-situ treatment plasma, the substrate 700 can be biased to control the directionality and / or accelerate ions formed from the treatment gas, such as charged treatment radicals, toward the substrate surface.

[0092] The tungsten gap-filling material 708 shown in Figure 7C can be selectively deposited into a plurality of openings 705 according to a differential suppression profile established by a prior suppression treatment. In one embodiment, the tungsten gap-filling material 708 is formed using a low-stress chemical vapor deposition (CVD) process that includes simultaneously (parallel) flowing a tungsten-containing precursor gas (also referred herein as process gas or deposition gas) and a reducing agent into a processing area 121 and exposing the substrate 700 to it. The tungsten-containing precursor and reducing agent used in the tungsten gap-filling CVD process may include any combination of tungsten-containing precursors and reducing agents described herein. In some embodiments, the tungsten-containing precursor includes WF6, and the reducing agent includes H2, B2H6, SiH4, or a combination thereof.

[0093] Here, the tungsten-containing precursor can be flowed into the processing area 121 at a rate between approximately 50 sccm and approximately 1000 sccm, or greater than approximately 50 sccm, or less than approximately 1000 Torr, or between approximately 100 sccm and approximately 900 sccm. The reducing agent is flowed into the processing area 121 at a rate greater than approximately 500 sccm, for example greater than approximately 750 sccm, greater than approximately 1000 sccm, or between approximately 500 sccm and approximately 10000 sccm, for example between approximately 1000 sccm and approximately 9000 sccm, or between approximately 1000 sccm and approximately 8000 sccm.

[0094] In some embodiments, tungsten gap-filling CVD process conditions are selected to provide tungsten features with relatively lower residual film stress compared to other tungsten CVD processes. For example, in some embodiments, the tungsten gap-filling CVD process includes heating the substrate to a temperature of about 250°C or higher, for example, about 300°C or higher, or between about 250°C and about 600°C, or between about 300°C and about 500°C. The substrate temperature may be controlled and monitored according to embodiments of the present disclosure. During the CVD process, the processing area 121 is generally maintained at a pressure of less than about 600 Torr, less than about 500 Torr, less than about 400 Torr, or between about 1 Torr and about 500 Torr, for example, between about 1 Torr and about 450 Torr, or between about 1 Torr and about 400 Torr, or for example, between about 1 Torr and about 300 Torr.

[0095] In another embodiment, the tungsten gap-filling material 708 may be deposited using an atomic layer deposition (ALD) process. The tungsten gap-filling ALD process involves repeatedly cycling between alternating exposure of the substrate 700 to a tungsten-containing precursor gas (also referred herein as the process gas or deposition gas) and a reducing agent, and purging the processing area 121 between alternating exposures. The tungsten-containing precursor and reducing agent used in the tungsten gap-filling ALD process may include any combination of the tungsten-containing precursor and reducing agent described herein. In some embodiments, the tungsten-containing precursor comprises WF6 and the reducing agent comprises H2.

[0096] Here, the tungsten-containing precursor and the reducing agent can each be passed through the processing area 121 for a period of time such as approximately 0.1 seconds and approximately 10 seconds, for example, approximately 0.5 seconds and approximately 5 seconds. The processing area 121 is generally purged between alternating exposures by passing an inert purge gas such as argon (Ar) through the processing area 121 for a period of time such as approximately 0.1 seconds and approximately 10 seconds, for example, approximately 0.5 seconds and approximately 5 seconds.

[0097] Exposure of the substrate 700 to a tungsten-containing precursor may include flowing the tungsten-containing precursor from the deposition gas source 140 to the processing area 121 at flow rates between approximately 10 sccm and approximately 1000 sccm, for example, between approximately 100 sccm and approximately 1000 sccm, between approximately 200 sccm and approximately 1000 sccm, between approximately 400 sccm and approximately 1000 sccm, or between approximately 500 sccm and approximately 900 sccm. Exposure of the substrate 700 to a reducing agent may include flowing the reducing agent from the deposition gas source 140 to the processing area 121 at flow rates between approximately 500 sccm and approximately 10000 sccm, for example, between approximately 500 sccm and approximately 8000 sccm, between approximately 500 sccm and approximately 5000 sccm, or between approximately 1000 sccm and approximately 4000 sccm.

[0098] In some embodiments, the tungsten gap-filling ALD process includes heating the substrate to a temperature of about 250°C or higher, for example, about 300°C or higher, or between about 250°C and about 600°C, or between about 300°C and about 500°C. The temperature of the substrate may be controlled and monitored according to embodiments of the present disclosure. In some embodiments, the ALD process includes maintaining the processing area 121 at a pressure such as less than about 150 Torr, less than about 100 Torr, less than about 50 Torr, for example, less than about 30 Torr, or between about 0.5 Torr and about 50 Torr, for example, between about 1 Torr and about 20 Torr.

[0099] In other embodiments, the tungsten gap-filling material 708 is deposited using a pulsed CVD method, which involves repeatedly exposing the substrate 700 to a tungsten-containing precursor gas and a reducing agent in alternating cycles without purging the processing area 121. The processing conditions for the tungsten gap-filling pulsed CVD method can be the same, substantially the same, or within the same range as those described above for the tungsten gap-filling ALD process.

[0100] While the foregoing applies to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims.

Claims

1. A processing chamber for processing substrates, Chamber body and A substrate support having an upper surface is disposed within the chamber body, Multiple substrate lift pins are arranged to penetrate the substrate support, A shadowing lift assembly that is operable to raise and lower a shadowing positioned above the upper surface of the substrate support or at the same height as the upper surface of the substrate support, A processing chamber, including a processing chamber.

2. The processing chamber according to claim 1, wherein the shadowing lift assembly is further operable to raise and lower the plurality of substrate lift pins.

3. The shadowing lift assembly is A plurality of substrate lift pin holders, each substrate lift pin holder being positioned around the base of a corresponding substrate lift pin among the plurality of substrate lift pins, Multiple shadowing lift pins, each shadowing lift pin is positioned radially outward of the corresponding substrate lift pin holder and configured to contact the bottom surface of the shadowing, A lift hoop configured to support each of the aforementioned substrate lift pin holders The processing chamber according to claim 2, further comprising:

4. The processing chamber according to claim 3, further comprising a controller configured to move the lift hoop vertically via a lift pin actuator, thereby moving the plurality of substrate lift pins and the shadowing lift pins vertically.

5. The processing chamber according to claim 3, comprising a lift pin base configured such that each of the plurality of substrate lift pins is positioned in one of the lift pin holders.

6. The processing chamber according to claim 1, further comprising a shower head disposed above the substrate support.

7. One or more gas sources configured to supply one or more accumulated gases to the processing volume section of the chamber body through the shower head, One or more radical generators configured to supply one or more plasmas to the processing volume section of the chamber body through the shower head, The processing chamber according to claim 6, further comprising:

8. The processing chamber according to claim 1, further comprising a lift pin actuator in the shadowing lift assembly that is operable to raise and lower the shadowing.

9. The processing chamber according to claim 1, wherein the substrate support includes a heater that is operable to heat the upper surface of the substrate support.

10. A light pipe that can be operated to collect electromagnetic radiation from inside the chamber body, A sensor capable of operating to sense the temperature of the upper surface of the substrate support, It is a controller, Based on the electromagnetic radiation collected from the upper surface of the substrate support by the light pipe, the temperature of the upper surface of the substrate support is estimated. Based on a comparison between the estimated temperature of the upper surface of the substrate support and the sensed temperature of the upper surface of the substrate support, the transmittance of the light pipe is determined. The temperature of the substrate is determined based on the electromagnetic radiation collected from the substrate by the light pipe and the transmittance. A controller and The processing chamber according to claim 1, further comprising:

11. The aforementioned controller Based on the temperature of the substrate, one or more gas sources configured to supply one or more deposit gases to the processing volume section of the chamber body through a shower head are controlled. Based on the temperature of the substrate, control one or more radical generators configured to supply one or more plasmas to the processing volume of the chamber body through the showerhead. The processing chamber according to claim 10, further configured as follows.

12. A method for processing a substrate, The substrate is supported at a first distance from the heater of the processing chamber, and the first distance is based on a first temperature of the substrate. The process involves performing a nucleation process on the substrate in the processing chamber while the substrate is at the first temperature, The substrate is supported at a second distance from the heater, and the second distance is based on the second temperature of the substrate. Performing a bulk process on the substrate in the processing chamber while the substrate is at the second temperature. Methods that include...

13. The second distance is 0 millimeters (mm), The method according to claim 12, wherein the second temperature of the substrate is approximately equal to the temperature of the heater.

14. During the nucleation process to be carried out on the substrate, one or more shadowing lift pins are used to support the shadowing of the processing chamber above the substrate. The method according to claim 12, further comprising:

15. The method according to claim 12, wherein the first temperature is between 285°C and 315°C.

16. The method according to claim 12, wherein the first temperature is between 298°C and 302°C.

17. The method according to claim 12, wherein the second temperature is between 435°C and 465°C.

18. The method according to claim 12, wherein the second temperature is between 448°C and 452°C.

19. The heater is used to support the purging, During the execution of the bulk process, the purging ring is used to support the shadowing of the processing chamber. The method according to claim 12, further comprising:

20. A method for determining the temperature of a substrate in a processing chamber, Using a light pipe, electromagnetic radiation from the upper surface of the substrate support placed inside the processing chamber is collected, The temperature of the upper surface of the substrate support is sensed using the temperature sensor within the substrate support, Based on the electromagnetic radiation collected from the upper surface of the substrate support by the light pipe, the temperature of the upper surface of the substrate support is estimated. The transmittance of the light pipe is determined based on a comparison between the estimated temperature of the upper surface of the substrate support and the sensed temperature of the upper surface of the substrate support. The light pipe is used to collect electromagnetic radiation from the substrate in the processing chamber, The temperature of the substrate is determined based on the electromagnetic radiation collected from the substrate by the light pipe and the transmittance. Methods that include...

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