Deposition methods for high aspect ratio (HAR) features

Non-conformal deposition of metal-containing layers on etch masks modifies their profile, improving mask selectivity and forming uniform high aspect ratio features by minimizing bowing and enhancing plasma etching fidelity.

JP2026521853APending Publication Date: 2026-07-02TOKYO ELECTRON LTD +1
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
TOKYO ELECTRON LTD
Filing Date
2024-03-20
Publication Date
2026-07-02

AI Technical Summary

Technical Problem

The semiconductor industry faces challenges in patterning features at atomic-scale dimensions with accuracy, precision, and uniformity, particularly in forming high aspect ratio (HAR) features due to tapered profiles in etch masks, which affect the directionality of reactive ions and cause undesirable expansion of recesses during plasma etching.

Method used

A method involving non-conformal deposition of a metal-containing layer on etch masks to modify their profile, followed by anisotropic plasma etching, which includes using metal oxides like aluminum oxide to provide sidewall passivation and improve mask selectivity during halogen-based etching processes.

Benefits of technology

This approach enables the formation of linear and uniform high aspect ratio features with minimal bowing, enhancing the fidelity of plasma etching processes and improving mask selectivity, thus addressing the challenges of tapered profiles in etch masks.

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Abstract

A method for processing a substrate, comprising: patterning a carbon-based hard mask layer on a dielectric layer to form a first recess in the carbon-based hard mask layer, wherein the first recess has a tapered profile such that the width of the first recess at a first height is greater than the width of the first recess at a second height lower than the first height; depositing a metal-containing layer on the patterned carbon-based hard mask layer, wherein the metal-containing layer is in physical contact with the sidewall of the patterned carbon-based hard mask layer in the first recess, and the metal-containing layer is thicker at the first height than at the second height; and etching the dielectric layer using the patterned carbon-based hard mask layer as an etch mask by an anisotropic plasma etching process to form a second recess in the dielectric layer.
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