Method for detecting the cleanliness of a process chamber and process chamber

Abstract

The process chamber includes a chamber body and at least one quartz crystal oscillator, the quartz crystal oscillator being fixedly mounted to the chamber body and having a deposition detection surface facing the interior of the chamber body, and the cleanliness detection method for the process chamber includes the steps of detecting the current natural frequency of the quartz crystal oscillator, determining the deposition film thickness on the corresponding inner wall of the chamber body based on the current natural frequency of the quartz crystal oscillator, and determining that the process chamber needs to be cleaned if the deposition film thickness is greater than a first predetermined film thickness threshold.

Description

Technical Field

[0001] This application relates to the field of process chambers, and specifically, to a method for detecting the cleanliness of a process chamber and a process chamber.

Background Art

[0002] Semiconductor process equipment is widely applied in the manufacturing process of integrated circuits (ICs) or MEMS devices. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, radicals, and neutral groups. These particles reach the surface of the wafer under the action of a bias voltage and interact with the wafer to generate various physical and chemical reactions on the material surface, generating a large number of fine particles. Most of the fine particles are removed after the process ends, but still a small amount of fine particles adhere to the inner wall of the process chamber, and after deposition, they either fall off or decompose on the surface of the wafer during the process, causing etching defects on the wafer.

[0003] In related processes, in order to prevent the fine particles adhering to the inner wall of the process chamber from causing etching defects on the surface of the wafer, usually, after performing a semiconductor process of N wafers in the process chamber (one process cycle for each wafer), a detection wafer is introduced to perform a specific detection process. After the detection process ends, by using a particle detection device to detect whether the change in the number of fine particles with a size of 60 nm or more on the surface before and after the wafer enters the chamber is less than 50, it is determined whether the cleanliness of the chamber meets the process requirements. If the requirements are not met, a specific waferless automatic cleaning (WAC) process is performed on the chamber, and after the detection result of the cleanliness of the chamber meets the process requirements, a semiconductor process such as etching is restarted.

[0004] However, conventional methods for detecting and removing microparticles in process chambers require the use of external equipment each time the process is started, the detection process is time-consuming, and the cleanliness of the inner wall of the process chamber depends on the accuracy of the waferless automated cleaning process. After cleaning, the state of polymer deposition on the inner wall of the chamber is not clear, and only the problem of microparticles can be mitigated, without ensuring that the process chamber is sufficiently cleaned. Furthermore, microparticles on the inner wall of the process chamber still fall onto the wafer surface during the process, causing etching defects in the wafer and reducing product yield.

[0005] Therefore, providing a method for detecting the cleanliness of a process chamber that can ensure the cleanliness of the inner wall of the process chamber is an urgent technical challenge that needs to be addressed in this field. [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] The present invention aims to provide a process chamber cleanliness detection method and a process chamber that can ensure the cleanliness of the inner wall of the process chamber. [Means for solving the problem]

[0007] To achieve the above objective, one aspect of the present invention provides a method for detecting the cleanliness of a process chamber, wherein the process chamber includes a chamber body and at least one quartz crystal oscillator, the quartz crystal oscillator is fixedly mounted to the chamber body and has a deposit detection surface facing the interior of the chamber body, and the method for detecting the cleanliness of the process chamber is: The steps include detecting the current natural frequency of the quartz crystal oscillator, The steps include determining the deposition film thickness on the inner wall of the corresponding chamber body based on the current natural frequency of the quartz crystal oscillator, The process includes the step of determining that the process chamber needs to be cleaned if the deposited film thickness is greater than a first predetermined film thickness threshold.

[0008] In some embodiments, the method is After cleaning the process chamber, the step of detecting the current natural frequency of the crystal oscillator, The steps include determining the deposition film thickness on the inner wall of the corresponding chamber body based on the current natural frequency of the quartz crystal oscillator, The process chamber is cleaned again if the deposited film thickness is greater than a second predetermined film thickness threshold, and the cleaning of the process chamber is terminated if the deposited film thickness is less than or equal to the second predetermined film thickness threshold.

[0009] A process chamber according to a second aspect of the present application includes a chamber body and at least one quartz crystal oscillator, the quartz crystal oscillator being fixedly mounted to the chamber body and having a deposition detection surface facing the interior of the chamber body, the current natural frequency of the quartz crystal oscillator representing the cleanliness of the process chamber.

[0010] In some embodiments, the chamber body includes a chamber body and a top cover, the top cover closing the top opening of the chamber body, a first mounting groove formed on the upper surface of the top cover, a first mounting hole formed at the bottom of the first mounting groove penetrating to the bottom surface of the top cover, the process chamber further includes a plurality of connecting wires, the first mounting hole is provided with the crystal oscillator, and the plurality of connecting wires pass through the first mounting groove and are connected to the electrodes of the crystal oscillator.

[0011] In some embodiments, the process chamber further includes a sleeve provided in the first mounting groove, the bottom of which is sealed and connected to the bottom of the first mounting groove, the sleeve having a first connection hole extending along the axial direction of the sleeve, and a plurality of the connection wires passing through the first connection hole and connected to the electrodes of the quartz crystal oscillator.

[0012] In some embodiments, a second mounting groove is formed in the outer wall of the chamber body, and a second mounting hole is formed at the bottom of the second mounting groove, penetrating to the inner wall of the chamber body. The process chamber further includes a plurality of connecting wires, the crystal oscillator is provided in the second mounting hole, and the plurality of connecting wires pass through the second mounting groove and are connected to the electrodes of the crystal oscillator.

[0013] In some embodiments, the process chamber further includes an airtight valve plate provided in the second mounting groove, sealed and connected to the second mounting groove, and having a second connection hole formed therein, wherein a plurality of the connection wires pass through the second connection hole and are connected to the electrodes of the quartz crystal oscillator.

[0014] In some embodiments, the process chamber further includes a mounting valve plate and wiring connection members, the mounting valve plate being fixedly mounted to the outer wall of the chamber body and positioned one-to-one with the crystal oscillators, the mounting valve plate having a plurality of relief through-holes formed through the mounting valve plate along the thickness direction of the mounting valve plate, and a plurality of connection wires corresponding to each crystal oscillator each pass through the plurality of relief through-holes on the corresponding mounting valve plate in a one-to-one correspondence. The wiring connection member seals the multiple relief through holes in a one-to-one correspondence and securely connects the connection wire to the mounting valve plate.

[0015] In some embodiments, a protective film is provided on the deposition detection surface of the quartz oscillator, and the material of the protective film includes yttrium oxide.

[0016] In some embodiments, the process chamber further includes a controller electrically connected to the quartz crystal oscillator, which detects the current natural frequency of the quartz crystal oscillator and determines whether the process chamber needs to be cleaned based on the current natural frequency.

[0017] In some embodiments, the controller further detects the current natural frequency of the crystal oscillator after cleaning the process chamber and determines whether to terminate the cleaning of the process chamber based on the current natural frequency. [Effects of the Invention]

[0018] In the process chamber cleanliness detection method and process chamber according to the present invention, the quartz crystal oscillator has a deposition detection surface facing the inside of the chamber body. Therefore, when fine particles or polymers are deposited on the inner wall of the chamber body to form a thin film during a semiconductor process, the thin film is also deposited on the deposition detection surface of the quartz crystal oscillator, changing the overall thickness of the quartz crystal oscillator and further changing the natural frequency of the quartz crystal oscillator. The natural frequency of the quartz crystal oscillator changes linearly according to its thickness. As a result, the deposition film thickness on the inner wall of the chamber body corresponding to the current natural frequency of the quartz crystal oscillator can be determined, and if the deposition film thickness is greater than a first predetermined film thickness threshold, it can be determined in a timely manner that the process chamber needs to be cleaned.

[0019] This invention enables accurate real-time monitoring of the internal conditions of a process chamber by determining the deposition film thickness using a quartz crystal oscillator installed inside the process chamber. This eliminates the need to check the internal conditions of the chamber by introducing a detection wafer and performing a specific detection process, thereby improving the maintenance efficiency of the process chamber, ensuring the effectiveness of the semiconductor process, and improving the yield of wafer products. [Brief explanation of the drawing]

[0020] The drawings provide further understanding of the present application and constitute part of the specification, illustrating the present application together with the following specific embodiments, but not limiting it.

[0021] [Figure 1] This is a schematic diagram of the process chamber according to an embodiment of the present invention. [Figure 2]It is a partial enlarged schematic view of area A of the process chamber in FIG. 1. [Figure 3] It is a partial enlarged schematic view of area B of the process chamber in FIG. 1. [Figure 4] It is a schematic view of a part of the structure of the process chamber according to an embodiment of the present application. [Figure 5] It is a schematic configuration diagram of a process chamber according to an embodiment of the present application. [Figure 6] It is a schematic configuration diagram of a process chamber according to another embodiment of the present application. [Figure 7] It is a flowchart of a method for detecting the cleanliness of a process chamber according to an embodiment of the present application. [Figure 8] It is a flowchart of a method for detecting the cleanliness of a process chamber according to another embodiment of the present application. [Figure 9] It is a flowchart of a method for detecting the cleanliness of a process chamber according to another embodiment of the present application. [Figure 10] It is a curve in which the natural frequency of the crystal oscillator changes according to its thickness.

Modes for Carrying Out the Invention

[0022] Hereinafter, specific embodiments of the present application will be described in detail with reference to the drawings. It should be understood that the specific embodiments described herein are only for explaining and interpreting the present application, and do not limit the present application.

[0023] In order to solve the above technical problems, as one aspect of the present application, a method for detecting the cleanliness of a process chamber is provided. The method for detecting the cleanliness of the process chamber is used for the process chamber. As shown in FIG. 1, the process chamber houses the wafer 10 and performs a semiconductor process on the wafer 10 introduced therein. The process chamber includes a chamber main body 100 and at least one crystal oscillator 210. The crystal oscillator 210 is fixedly provided on the chamber main body 100 and has a deposition detection surface facing the inside of the chamber main body 100. As shown in FIG. 7, the method for detecting the cleanliness of the process chamber is Step S1 involves detecting the current natural frequency of the crystal oscillator 210, Step S2 determines the deposition film thickness on the inner wall of the corresponding chamber body 100 based on the current natural frequency of the quartz oscillator 210, The process includes step S3, which determines that the process chamber needs to be cleaned if the deposited film thickness is greater than a first predetermined film thickness threshold.

[0024] The natural frequency of the piezoelectric effect of the quartz oscillator 210 depends on its geometric dimensions, cut type, and thickness, and its calculation formula is: f·d = v / 2, Here, f is the natural frequency of the crystal oscillator 210, d is the thickness of the element of the crystal oscillator 210, and v is the shear rate of the element of the crystal oscillator 210.

[0025] When the accumulation thickness of fine particles on the deposition detection surface of the quartz oscillator 210 changes, and the amount of change is Δd, a mass loading effect occurs, which causes the natural frequency of the quartz oscillator 210 to change, and the amount of change is Δf. The formula for calculating this is:

number

[0026] In the embodiment of the present invention, the quartz oscillator 210 has a deposition detection surface facing the interior of the chamber body 100. Therefore, when fine particles or polymers are deposited on the inner wall of the chamber body 100 to form a thin film during the semiconductor process, the thin film is also deposited on the deposition detection surface of the quartz oscillator 210, changing the overall thickness of the quartz oscillator 210 and further changing the natural frequency of the quartz oscillator 210. As can be seen from the above analysis, the natural frequency of the quartz oscillator 210 changes linearly with respect to its thickness.

[0027] Therefore, the cleanliness detection method for a process chamber according to the present invention determines the deposition film thickness on the inner wall of the corresponding chamber body 100 from the current natural frequency of the quartz oscillator 210 based on pre-stored parameters relating to the linear relationship between the natural frequency of the quartz oscillator 210 and the film thickness, and further determines in a timely manner that the process chamber needs to be cleaned if the deposition film thickness is greater than a first predetermined film thickness threshold.

[0028] In some embodiments, if the deposited film thickness is below a first predetermined film thickness threshold, it is not necessary to clean the process chamber, and the semiconductor process can continue on the wafer.

[0029] The cleanliness detection method for a process chamber according to the present invention allows for accurate real-time monitoring of the internal conditions of the process chamber by determining the deposition film thickness using a quartz crystal oscillator 210 installed inside the process chamber. This eliminates the need to check the internal conditions of the chamber by introducing a detection wafer and performing a specific detection process, thereby improving the maintenance efficiency of the process chamber, ensuring the effectiveness of the semiconductor process, and improving the yield of wafer products.

[0030] As one preferred embodiment of the present invention, as shown in Figure 8, the method for detecting the cleanliness of a process chamber is: If it is determined that the process chamber needs to be cleaned, the process further includes step S4 of cleaning the process chamber.

[0031] In order to ensure the cleaning effect of the chamber body 100, as one preferred embodiment of the present invention, the method is as shown in Figure 9. After cleaning the process chamber (i.e., after completing step S4), step S41 is performed to detect the current natural frequency of the crystal oscillator 210, Step S42 determines the deposition film thickness on the inner wall of the corresponding chamber body 100 based on the current natural frequency of the quartz oscillator 210, The process further includes step S43, which involves cleaning the process chamber again (i.e., proceeding to step S4) if the deposited film thickness is greater than a second predetermined film thickness threshold, and ending the cleaning of the process chamber if the deposited film thickness is less than or equal to the second predetermined film thickness threshold.

[0032] In the embodiment of the present invention, after cleaning the inside of the chamber body 100, the deposition film thickness on the inner wall of the chamber body 100 is determined again, and the chamber cleaning effect is determined by comparing the deposition film thickness with a second predetermined film thickness threshold. This ensures the cleaning effect of the chamber body 100 and further ensures the effectiveness of the semiconductor process.

[0033] As one preferred embodiment of the present invention, a method for detecting the cleanliness of a process chamber is: The method further includes the step of ensuring that the process chamber reaches the required level of cleanliness before performing the semiconductor process, by repeatedly performing the semiconductor process and executing steps S1 to S3 before each semiconductor process.

[0034] A second aspect of the present invention provides a process chamber comprising a chamber body 100 and at least one quartz crystal oscillator 210, wherein the quartz crystal oscillator 210 is fixedly mounted to the chamber body 100 and has a deposition detection surface facing the interior of the chamber body 100, and the current natural frequency of the quartz crystal oscillator 210 represents the cleanliness of the process chamber.

[0035] In the embodiments of this invention, the quartz oscillator 210 has a deposition detection surface facing the interior of the chamber body 100, and the current natural frequency of the quartz oscillator 210 represents the cleanliness of the process chamber. In the semiconductor process, when fine particles or polymers are deposited on the inner wall of the chamber body 100 to form a thin film, the thin film is also deposited on the deposition detection surface of the quartz oscillator 210, changing the overall thickness of the quartz oscillator 210 and further changing the natural frequency of the quartz oscillator 210. This allows for the timely determination that the process chamber needs to be cleaned if the deposited film is greater than a first predetermined film thickness threshold, based on pre-stored parameters relating to the linear relationship between the natural frequency of the quartz oscillator 210 and the film thickness.

[0036] The process chamber according to this application can accurately monitor the internal conditions of the process chamber in real time by determining the deposition film thickness using a quartz crystal oscillator 210 provided inside the process chamber. This eliminates the need to check the internal conditions of the chamber by introducing a detection wafer and performing a specific detection process, thereby improving the maintenance efficiency of the process chamber, ensuring the effectiveness of the semiconductor process, and improving the yield of wafer products.

[0037] As one preferred embodiment of the present invention, as shown in Figure 1, the chamber body 100 includes a chamber body 110 and a top cover 120, the top cover 120 closing the top opening of the chamber body 110.

[0038] In one preferred embodiment of the present invention, the process chamber further includes a controller electrically connected to a quartz crystal oscillator 210 (via a connecting wire 220) that detects the current natural frequency of the quartz crystal oscillator 210 and determines whether the process chamber needs to be cleaned based on the current natural frequency, i.e., that implements the cleanliness detection method for the process chamber according to the embodiment of the present invention.

[0039] In one preferred embodiment of the present invention, the controller further ensures the cleaning effect of the chamber body 100 and further ensures the effect of the semiconductor process by detecting the current natural frequency of the quartz crystal oscillator after cleaning the process chamber and determining whether or not to terminate the cleaning of the process chamber based on the current natural frequency. For example, the deposition film thickness on the inner wall of the corresponding chamber body 100 is determined based on the current natural frequency of the quartz crystal oscillator 210. If the deposition film thickness is greater than a second predetermined film thickness threshold, the process chamber is cleaned again (i.e., the process proceeds to step S4), and if the deposition film thickness is less than or equal to the second predetermined film thickness threshold, the cleaning of the process chamber is terminated.

[0040] In one preferred embodiment of the present invention, as shown in Figures 5 and 6, the controller may include an industrial computer 1 and a control module 2, the control module 2 having an oscillator circuit that collects the current natural frequency of the quartz crystal oscillator 210, calculates the surface thickness of the quartz crystal oscillator 210, and transmits the data to the industrial computer 1. The industrial computer 1 compares the data and determines the next process (for example, whether to perform a semiconductor process or clean the process chamber).

[0041] In one preferred embodiment of the present invention, as shown in Figure 2, a first mounting groove is formed on the upper surface of the top cover 120, and a first mounting hole is formed at the bottom of the first mounting groove, penetrating to the bottom surface of the top cover 120. The process chamber further includes a plurality of connecting wires 220, a quartz crystal oscillator 210 is provided in the first mounting hole, and the plurality of connecting wires 220 pass through the first mounting groove and are connected to the electrodes of the quartz crystal oscillator 210.

[0042] To ensure airtightness of the chamber body 100, in one preferred embodiment of the present invention, as shown in Figure 2, the process chamber further includes a sleeve 410 provided in a first mounting groove, the bottom of which is sealed and connected to the bottom of the first mounting groove, the sleeve 410 having a first connection hole extending along the axial direction of the sleeve 410, and a plurality of connection wires 220 passing through the first connection hole and connected to the electrodes of the quartz oscillator 210.

[0043] In the embodiment of the present invention, a sleeve 410 is provided in the first mounting groove, and the sleeve 410 protects the connecting wire 220 and can be sealed to the bottom of the first mounting groove, thereby preventing the internal environment of the chamber body 100 from communicating with the outside through the gap between the crystal oscillator 210 and the first mounting hole, and ensuring the airtightness of the chamber body 100.

[0044] As one preferred embodiment of the present invention, as shown in Figure 2, the deposition detection surface of the quartz oscillator 210 and the bottom surface of the top cover 120 are flush, thereby ensuring consistency between the film thickness deposited on the deposition detection surface and the film thickness deposited on the inner wall of the chamber body 100.

[0045] In order to further ensure the airtightness of the chamber body 100, in one preferred embodiment of the present invention, the sleeve 410 includes a main body and a positioning part connected in order along the axial direction of the sleeve 410, wherein the main body is provided in the first mounting groove and its cross-sectional shape corresponds to the cross-sectional shape of the first mounting groove, and the positioning part has a cross-sectional shape corresponding to the cross-sectional shape of the first mounting hole and its bottom end is inserted into the first mounting hole. The process chamber further includes an airtight gasket 420, which is fitted onto a positioning portion to seal the bottom of the sleeve 410 to the bottom of the first mounting groove.

[0046] In the embodiment of the present invention, the sleeve 410 employs a stepped design, and the stepped portion is fitted to the bottom of the first mounting groove by an airtight gasket 420 to create a sealed connection, thereby further ensuring the airtightness of the chamber body 100.

[0047] In one preferred embodiment of the present invention, the material of the sleeve 410 is ceramic.

[0048] In one preferred embodiment of the present invention, as shown in Figure 3, a second mounting groove is formed in the outer wall of the chamber body 100, and a second mounting hole is formed at the bottom of the second mounting groove, penetrating to the inner wall of the chamber body 100. The process chamber further includes connecting wires 220, a quartz crystal oscillator 210 is provided in the second mounting hole, and a plurality of connecting wires 220 pass through the second mounting groove and are connected to the electrodes of the quartz crystal oscillator 210.

[0049] To ensure the airtightness of the chamber body 100, in one preferred embodiment of the present invention, as shown in Figure 3, the process chamber further includes an airtight valve plate 430 provided in a second mounting groove, sealed to the second mounting groove, and having a second connection hole formed therein, where a plurality of connection wires 220 pass through the second connection hole and are connected to the electrodes of the quartz crystal oscillator 210. Each electrode of the quartz crystal oscillator 210 is connected to the controller via the connection wires 220.

[0050] As one preferred embodiment of the present invention, as shown in Figure 3, the deposition detection surface of the quartz oscillator 210 and the inner wall of the chamber body 100 are flush, thereby ensuring consistency between the film thickness deposited on the deposition detection surface and the film thickness deposited on the inner wall of the chamber body 100.

[0051] As one preferred embodiment of the present invention, as shown in Figures 2 to 4, the process chamber further includes a mounting valve plate 310 and a wiring connection member 320, wherein the mounting valve plate 310 is fixedly provided on the outer wall of the chamber body 100 and is positioned in a one-to-one correspondence with the crystal oscillator 210, the mounting valve plate 310 has a plurality of relief through holes formed therein along the thickness direction of the mounting valve plate 310, a plurality of connection wires 220 corresponding to each crystal oscillator 210 each pass through the plurality of relief through holes on the corresponding mounting valve plate 310 in a one-to-one correspondence, the wiring connection member 320 seals the plurality of relief through holes in a one-to-one correspondence and fixes the connection wires 220 to the mounting valve plate 310.

[0052] Specifically, as shown in Figure 2, when a first mounting groove is formed on the upper surface of the top cover 120 and the sleeve 410 is provided in the first mounting groove, the mounting valve plate 310 corresponding to the sleeve 410 is fixedly provided on the upper surface of the top cover 120 and seals the opening of the first mounting groove on the upper surface of the top cover 120.

[0053] As shown in Figure 3, when a second mounting groove is formed in the outer wall of the chamber body 100 and an airtight valve plate 430 is provided in the second mounting groove, the mounting valve plate 310 corresponding to the airtight valve plate 430 is fixedly provided in the outer wall of the chamber body 100 and seals the opening of the second mounting groove in the outer wall of the chamber body 100.

[0054] In the embodiment of the present invention, a mounting valve plate 310 is further attached to the outside of the sleeve 410 and / or airtight valve plate 430, and the mounting valve plate 310 is fixedly connected to the surface of the chamber body 100 from the outside, and by sealing the opening of the first mounting groove or the second mounting groove, the airtightness of the chamber body 100 can be further ensured. Furthermore, by fixing the wiring connection member 320 to the connection wire 220 and the mounting valve plate 310, the portion of the connection wire 220 located between the crystal oscillator 210 and the mounting valve plate 310 is fixed by the mounting valve plate 310, thereby avoiding displacement of the crystal oscillator 210 due to vibration and twisting of the connection wire 220 in that region, ensuring the stability of the position of the crystal oscillator 210, and further ensuring the stability of the monitoring results inside the chamber.

[0055] As one preferred embodiment of the present invention, as shown in Figure 4, the mounting valve plate 310 has a plurality of fixing through holes 311 that penetrate the mounting valve plate 310 along the thickness direction of the mounting valve plate 310, and the outer wall of the chamber body 100 has a plurality of fixing holes, and the mounting valve plate 310 is fixedly connected to the chamber body 100 by fasteners that sequentially penetrate the fixing through holes 311 and the corresponding fixing holes.

[0056] In one preferred embodiment of the present invention, the wiring connection member 320 is welded to the connection wire 220 and the mounting valve plate 310.

[0057] In one preferred embodiment of the present invention, a protective film is provided on the deposition detection surface of the quartz oscillator 210, and the material of the protective film includes yttrium oxide.

[0058] In one preferred embodiment of the present invention, a high-purity thin film may be manufactured by vacuum electron beam deposition. Specifically, a high-energy electron beam is irradiated onto yttrium oxide (which is a white powder at room temperature) in a high-vacuum environment to melt it. After reaching the saturated vapor pressure, the material evaporates and fills the chamber in a gaseous state, and a quartz crystal oscillator is placed at the top of the chamber. At this time, gaseous yttrium oxide particles condense on the surface of the quartz crystal oscillator to form a film, and a yttrium oxide thin film of a certain thickness is gradually formed.

[0059] To ensure that it is understood, the embodiments described above are merely exemplary embodiments used to illustrate the principles of the present application, and the application is not limited thereto. A person skilled in the art could make several improvements and modifications without departing from the spirit and substance of the present application, and these improvements and modifications would also be deemed to fall within the scope of the protection of the present application. [Explanation of Symbols]

[0060] 100 Chamber-based 110 Chamber body 120 Top lid 210 Crystal Oscillator 220 connecting wires 310 Mounting valve plate 311 Fixing through hole 320 Wiring connection components 410 sleeves 420 Airtight gasket 430 Airtight valve plate 10 wafers 1. Industrial Computers 2 Control Module

Claims

1. A method for detecting the cleanliness of a process chamber, wherein the process chamber includes a chamber body and at least one quartz crystal oscillator, the quartz crystal oscillator is fixedly mounted to the chamber body and has a deposit detection surface facing the interior of the chamber body, and the method for detecting the cleanliness of the process chamber is: The steps include detecting the current natural frequency of the quartz crystal oscillator, The steps include determining the deposition film thickness on the inner wall of the corresponding chamber body based on the current natural frequency of the quartz crystal oscillator, A method for detecting the cleanliness of a process chamber, comprising the step of determining that the process chamber needs to be cleaned if the deposited film thickness is greater than a first predetermined film thickness threshold.

2. After cleaning the process chamber, the step of detecting the current natural frequency of the crystal oscillator, The steps include determining the deposition film thickness on the inner wall of the corresponding chamber body based on the current natural frequency of the quartz crystal oscillator, The method for detecting the cleanliness of a process chamber according to claim 1, further comprising the steps of: cleaning the process chamber again if the deposited film thickness is greater than a second predetermined film thickness threshold; and terminating the cleaning of the process chamber if the deposited film thickness is less than or equal to the second predetermined film thickness threshold.

3. A process chamber comprising a chamber body and at least one quartz crystal oscillator, wherein the quartz crystal oscillator is fixedly mounted to the chamber body and has a deposit detection surface facing the interior of the chamber body, and the current natural frequency of the quartz crystal oscillator represents the cleanliness of the process chamber.

4. The process chamber according to claim 3, wherein the chamber body includes a chamber body and a top cover, the top cover closes the top opening of the chamber body, a first mounting groove is formed on the upper surface of the top cover, a first mounting hole is formed at the bottom of the first mounting groove and penetrates to the bottom surface of the top cover, the process chamber further includes a plurality of connecting wires, the crystal oscillator is provided in the first mounting hole, and the plurality of connecting wires pass through the first mounting groove and are connected to the electrodes of the crystal oscillator.

5. The process chamber according to claim 4, further comprising a sleeve provided in the first mounting groove, the bottom of which is sealed and connected to the bottom of the first mounting groove, wherein the sleeve has a first connection hole extending along the axial direction of the sleeve, and a plurality of connection wires pass through the first connection hole and are connected to the electrodes of the quartz oscillator.

6. The process chamber according to claim 3, wherein a second mounting groove is formed in the outer wall of the chamber body, a second mounting hole is formed at the bottom of the second mounting groove, and the process chamber further includes a plurality of connecting wires, the crystal oscillator is provided in the second mounting hole, and the plurality of connecting wires pass through the second mounting groove and are connected to the electrodes of the crystal oscillator.

7. The process chamber according to claim 6, further comprising an airtight valve plate provided in the second mounting groove and sealed to the second mounting groove, wherein a plurality of the connecting wires pass through the second connecting hole and are connected to the electrodes of the quartz oscillator.

8. The apparatus further includes a mounting valve plate and a wiring connection member, wherein the mounting valve plate is fixedly mounted on the outer wall of the chamber body and its position corresponds one-to-one with the crystal oscillator, the mounting valve plate has a plurality of relief through holes formed along the thickness direction of the mounting valve plate and passing through the mounting valve plate, and each of the plurality of connection wires corresponding to each crystal oscillator passes through the plurality of relief through holes on the corresponding mounting valve plate in a one-to-one correspondence. The process chamber according to any one of claims 4 to 7, characterized in that the wiring connection member seals a plurality of relief through holes in a one-to-one correspondence and fixes the connection wire to the mounting valve plate.

9. The process chamber according to any one of claims 3 to 7, wherein a protective film is provided on the deposition detection surface of the quartz oscillator, and the material of the protective film includes yttrium oxide.

10. The process chamber according to any one of claims 3 to 7, further comprising a controller electrically connected to the quartz oscillator, which detects the current natural frequency of the quartz oscillator and determines whether or not the process chamber needs to be cleaned based on the current natural frequency.

11. The process chamber according to claim 10, further comprising the controller detecting the current natural frequency of the crystal oscillator after cleaning the process chamber, and determining whether or not to terminate the cleaning of the process chamber based on the current natural frequency.

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