Secondary battery manufacturing equipment

The secondary battery manufacturing apparatus addresses productivity issues by using magnetic field-controlled laser welding to manage sputter adhesion and ensure consistent welds, enhancing reliability and throughput in secondary battery production.

JP2026528845APending Publication Date: 2026-08-25LG ENERGY SOLUTION LTD
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Patent Information

Application Number
JP2026508940
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-03-07
Filing Date
2025-03-05
Publication Date
2026-08-25

AI Technical Summary

Technical Problem

The challenge is to enhance the productivity of secondary battery manufacturing processes, particularly in the welding of electrode tabs and leads, to improve reliability and extend the maintenance cycles of manufacturing equipment.

Method used

A secondary battery manufacturing apparatus is designed with masking fixtures and sputter adsorption devices that apply magnetic fields to control the laser welding process, using magnetic field generating rods to manage sputter adhesion and maintain contact between electrode leads and tabs, thereby improving the manufacturing process efficiency.

Benefits of technology

The apparatus extends the cleaning cycles of manufacturing components, enhances manufacturing throughput, and improves the reliability of secondary battery production by minimizing sputter adhesion and maintaining consistent weld quality.

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Abstract

According to exemplary embodiments, an apparatus for manufacturing a secondary battery is provided. The apparatus includes a first masking fixture having a first opening for pressurizing a first surface of a lead-tab assembly of a battery cell and exposing the first surface; a first sputter adsorption device coupled to the first masking fixture; and a scanner head configured to irradiate the lead-tab assembly with a laser beam so that the lead-tab assembly melts.
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Description

Technical Field

[0001] The present disclosure relates to a secondary battery manufacturing apparatus.

[0002] This application claims the benefit of priority based on Korean Patent Application No. 10-2024-0032305 filed on March 7, 2024, and all the contents disclosed in the document of the Korean patent application are incorporated herein by reference.

Background Art

[0003] Unlike primary batteries, secondary batteries can be charged and discharged multiple times. Secondary batteries are widely used as an energy source for various cordless devices such as mobile phones, notebook computers, and cordless vacuum cleaners. In recent years, due to improvements in energy density and economies of scale, the manufacturing cost per unit capacity of secondary batteries has been significantly reduced, and as the driving range of battery electric vehicles (BEVs) has increased to a level comparable to that of fuel vehicles, the main application of secondary batteries has been shifting from mobile devices to mobility.

[0004] To meet the rapid growth in demand for secondary batteries for mobility, cell manufacturers are facing huge capital expenditures. Each company is enhancing productivity per line to maximize the return on invested capital, and various studies for improving yield and productivity are ongoing for this purpose.

Summary of the Invention

Problems to be Solved by the Invention

[0005] The technical problem to be achieved by the present disclosure is to provide an apparatus for manufacturing secondary batteries with improved productivity.

Means for Solving the Problems

[0006] According to exemplary embodiments of the present disclosure for solving the above-mentioned problems, a secondary battery manufacturing apparatus is provided. The apparatus includes a first masking fixture having a first opening for pressurizing a first surface of a lead-tab assembly of a battery cell and exposing the first surface; a first sputter adsorption device coupled to the first masking fixture; and a scanner head configured to irradiate the lead-tab assembly with a laser beam so that the lead-tab assembly melts.

[0007] The first sputtering adsorption apparatus described above is configured to apply a first magnetic field to the first opening.

[0008] The intensity of the first magnetic field at the central portion of the first aperture is different from the intensity of the first magnetic field at the edge portion of the first aperture.

[0009] The intensity of the first magnetic field at the center of the first aperture is less than the intensity of the first magnetic field at the edge of the first aperture.

[0010] The first sputter adsorption apparatus described above includes a first magnetic field generating rod and a second magnetic field generating rod configured to generate the first magnetic field.

[0011] The direction of the first current applied to the first magnetic field generating rod is opposite to the direction of the second current applied to the second magnetic field generating rod.

[0012] At the center of the first opening, the magnetic field generated by the first magnetic field generating rod cancels out the magnetic field generated by the second magnetic field generating rod.

[0013] The apparatus further includes a second masking jig which includes a second opening that pressurizes the second surface of the lead-tab assembly opposite to the first surface of the lead-tab assembly, thereby exposing the second surface, and a second sputter adsorption device coupled to the second masking jig.

[0014] The second sputtering adsorption apparatus described above is configured to apply a second magnetic field to the second opening.

[0015] The intensity of the second magnetic field at the central portion of the second aperture is different from the intensity of the second magnetic field at the edge portion of the second aperture.

[0016] The intensity of the second magnetic field at the center of the second aperture is less than the intensity of the second magnetic field at the edge of the second aperture.

[0017] The second sputtering adsorption apparatus described above includes a third magnetic field generating rod and a fourth magnetic field generating rod configured to generate the second magnetic field.

[0018] The direction of the third current applied to the third magnetic field generating rod is opposite to the direction of the fourth current applied to the fourth magnetic field generating rod.

[0019] At the center of the second opening, the magnetic field generated by the third magnetic field generating rod cancels out the magnetic field generated by the fourth magnetic field generating rod.

[0020] According to exemplary embodiments, a secondary battery manufacturing apparatus is provided. The apparatus includes a first masking fixture having a first opening for pressurizing a first surface of a lead-tab assembly of a battery cell and exposing the first surface; a second masking fixture having a second opening for pressurizing a second surface of the lead-tab assembly opposite to the first surface and exposing the second surface; a second sputtering adsorption device coupled to the second masking fixture; and a scanner head configured to irradiate the first surface of the lead-tab assembly with a laser beam so that the lead-tab assembly melts.

[0021] The second sputtering adsorption apparatus described above is configured to apply a second magnetic field to the second opening.

[0022] The intensity of the second magnetic field at the central portion of the second aperture is different from the intensity of the second magnetic field at the edge portion of the second aperture.

[0023] The intensity of the second magnetic field at the center of the second aperture is less than the intensity of the second magnetic field at the edge of the second aperture.

[0024] The second sputter adsorption device includes a third magnetic field generation rod and a fourth magnetic field generation rod configured to generate the second magnetic field.

[0025] The direction of the third current applied to the third magnetic field generation rod is opposite to the direction of the fourth current applied to the fourth magnetic field generation rod.

[0026] At the center of the second opening, the magnetic field generated by the third magnetic field generation rod cancels out the magnetic field generated by the fourth magnetic field generation rod.

Advantages of the Invention

[0027] The secondary battery manufacturing apparatus according to an exemplary embodiment of the present disclosure includes a sputter adsorption device configured to adsorb sputter generated during welding of an electrode-tab assembly. Thereby, the management cycle of the secondary battery manufacturing apparatus such as the cleaning cycle can be extended, and the throughput can be improved.

[0028] The effects obtained from the exemplary embodiments of the present disclosure are not limited to the effects mentioned above, and other effects not mentioned can be clearly derived and understood by those having ordinary knowledge in the technical field to which the exemplary embodiments of the present disclosure belong from the following description. That is, unintended effects associated with implementing the exemplary embodiments of the present disclosure can also be derived by those having ordinary knowledge in the technical field from the exemplary embodiments of the present disclosure.

Brief Description of the Drawings

[0029] [Figure 1] The drawing shows a secondary battery manufacturing apparatus according to an exemplary embodiment. [Figure 2] The drawing shows the effects of a secondary battery manufacturing apparatus according to an exemplary embodiment. [Figure 3] The drawing shows a secondary battery manufacturing apparatus according to another exemplary embodiment.

Modes for Carrying Out the Invention

[0030] Preferred embodiments of this disclosure will be described in detail below with reference to the attached drawings. As a premise, terms and words used herein and in the claims should not be construed to be limited to their usual or dictionary meanings, but rather to meanings and concepts consistent with the technical idea of ​​this disclosure, based on the principle that inventors may appropriately define the concepts of terms in order to best describe their own inventions.

[0031] Therefore, the embodiments described herein and the configurations shown in the drawings represent only one of the most preferred embodiments of the disclosure and do not represent the entire technical concept of the disclosure. As a result, there may be a variety of equivalents and modifications that can be substituted for them at the time of filing.

[0032] Furthermore, if it is determined that a specific description of a relevant publicly known configuration or function in this disclosure would obscure the gist of this disclosure, such detailed description will be omitted.

[0033] Since embodiments of this disclosure are provided to explain the disclosure more fully to a person of ordinary skill, the shapes and sizes of components in the drawings may be exaggerated, omitted, or shown schematically for the sake of clarity. Accordingly, the sizes and proportions of each component do not fully reflect their actual sizes and proportions.

[0034] (First Embodiment) Figure 1 is a drawing showing a secondary battery manufacturing apparatus according to an exemplary embodiment.

[0035] Referring to Figure 1, the secondary battery manufacturing apparatus 100 may include a scanner head 110, a first masking jig 120, a second masking jig 130, and a first sputtering adsorption device 140.

[0036] The secondary battery manufacturing apparatus 100 can be configured to process the electrode-tab assembly LTC of the battery cell BC. The secondary battery manufacturing apparatus 100 can be configured to perform laser welding. The secondary battery manufacturing apparatus 100 can be configured to weld the electrode tab ET and electrode lead EL of the electrode-tab assembly LTC of the battery cell BC. Welding with a welding beam WB may be keyhole welding. Welding the electrode tab ET and electrode lead EL may include irradiating the welding beam WB along a helical welding line.

[0037] The electrode lead EL may be the output terminal of the battery cell BC. The battery cell BC may include a case, electrode assembly, electrolyte, and electrode lead EL. The electrode tab ET may be connected to the electrode assembly. The case may be one of a pouch case, cylindrical case, or rectangular case. The electrode assembly may be one of a jelly roll type or stack type. A jelly roll type electrode assembly may include a winding structure of a positive electrode, a negative electrode, and a separator membrane interposed between them. A stack type electrode assembly may include multiple positive electrodes, multiple negative electrodes, and multiple separator membranes interposed between them, stacked sequentially.

[0038] As the energy density of the battery cell BC increases, the electrode leads EL and electrode tabs ET can be bonded via ultrasonic pre-welding and laser beam main welding. This allows the electrode leads EL and electrode tabs ET to be bonded by methods such as ultrasonic welding before the electrode-tab assembly LTC is processed by the secondary battery manufacturing apparatus 100. However, the electrode leads EL and electrode tabs ET of the electrode-tab assembly LTC do not necessarily have to be processed by the pre-welding process and may form a laminated structure that is not welded to each other.

[0039] The scanner head 110 may be coupled to a beam source, or it may include a beam source. The beam source may be a laser (Light Amplification by Stimulated Emission of Radiation) device. The beam source may be configured to generate a welding beam (WB). The welding beam (WB) may be a laser beam. According to an exemplary embodiment, the welding beam (WB) may be near-infrared. According to an exemplary embodiment, the wavelength of the welding beam (WB) may be in the range of about 750 nm to about 2500 nm. According to an exemplary embodiment, the wavelength of the welding beam (WB) may be about 1070 nm.

[0040] As an example, the beam source may be a solid-state laser device such as a semiconductor laser device, a neodium-yag (Nd:YAG) laser device, a titanium-sapphire (Ti-Sapphire) laser device, or an optical fiber laser device. As another example, the beam source may be a liquid laser device such as a dye laser device. As yet another example, the beam source may be a gas laser device such as a helium-neon laser, a carbon dioxide laser, or an excimer laser.

[0041] The welding beam WB generated by the beam source can be coupled to the scanner head 110. According to an exemplary embodiment, the welding beam WB can be transmitted to the scanner head 110 via one of the following: free space optics, optical integrated circuit, and fiber optics.

[0042] The first masking fixture 120 may be configured to apply pressure to the first surface S1 of the electrode-tab assembly LTC. The first masking fixture 120 may include a first opening 120OP that exposes the first surface S1 of the electrode-tab assembly LTC.

[0043] The second masking jig 130 can be configured to pressurize the second surface S2 of the electrode-tab assembly LTC. The second masking jig 130 may include a second opening 130OP that exposes the second surface S2 of the electrode-tab assembly LTC.

[0044] Since the electrode-tab assembly LTC is pressurized by the first masking jig 120 and the second masking jig 130, contact between the electrode lead EL and the electrode tab ET is maintained while the electrode-tab assembly LTC is processed by the welding beam WB, preventing lifting between the electrode lead EL and the electrode tab ET, thereby improving reliability in the manufacture of secondary batteries.

[0045] As a non-restrictive example, the first opening 120OP and the second opening 130OP may have a rectangular planar shape. The first opening 120OP can expose the area to be welded on the first surface S1 of the electrode-tab assembly LTC, and the second opening 130OP can expose the area to be welded on the second surface S2 of the electrode-tab assembly LTC.

[0046] According to an exemplary embodiment, the first sputter adsorption device 140 can be coupled to the first masking jig 120. According to an exemplary embodiment, the first sputter adsorption device 140 may be located within the first opening 120OP of the first masking jig 120.

[0047] The first sputtering adsorption device 140 may include a first magnetic field generating rod 141 and a second magnetic field generating rod 143. The first sputtering adsorption device 140 may be configured to apply a magnetic field to the first aperture 120OP. The magnetic field applied to the first aperture 120OP by the first sputtering adsorption device 140 may be called the first magnetic field.

[0048] Here, horizontal and vertical are defined with respect to the welding beam (WB). The direction substantially parallel to the direction in which the welding beam (WB) propagates toward the lead-tab connector (LTC) is called the vertical direction, and the direction substantially perpendicular to the direction in which the welding beam (WB) propagates toward the lead-tab connector (LTC) is called the horizontal direction.

[0049] According to an exemplary embodiment, a first current can be applied to the first magnetic field generating rod 141, and a second current can be applied to the second magnetic field generating rod 143. This allows the first magnetic field generating rod 141 and the second magnetic field generating rod 143 to be configured to apply the magnetic fields induced by the first and second currents to the first aperture 120OP.

[0050] In this case, the magnetic field generated by the first magnetic field generating rod 141 in the central portion of the first aperture 120OP may be opposite to the magnetic field generated by the second magnetic field generating rod 143. In the central portion of the first aperture 120OP, the intensity of the magnetic field generated by the first magnetic field generating rod 141 may be substantially the same as the intensity of the magnetic field generated by the second magnetic field generating rod 143.

[0051] According to an exemplary embodiment, the intensity of the first magnetic field in the central portion (more specifically, the horizontal central portion) of the first aperture 120OP may differ from the intensity of the first magnetic field in the edge portion of the first aperture 120OP. According to an exemplary embodiment, the intensity of the first magnetic field in the central portion (more specifically, the horizontal central portion) of the first aperture 120OP may be less than the intensity of the first magnetic field in the edge portion of the first aperture 120OP. According to an exemplary embodiment, in the central portion of the first aperture 120OP, the magnetic field generated by the first magnetic field generating rod 141 can be canceled out by the magnetic field generated by the second magnetic field generating rod 143.

[0052] Here, the edge portion of the first opening 120OP may be a portion that is horizontally separated from the central portion of the first opening 120OP. More specifically, here, the edge portion of the first opening 120OP may be a portion that is separated from the central portion of the first opening 120OP in the direction of separation between the first magnetic field generating rod 141 and the second magnetic field generating rod 143.

[0053] According to an exemplary embodiment, a non-zero first magnetic field at the center of the first aperture 120OP can deflect the welding beam WB, thereby reducing the straightness of the welding beam WB. When the straightness of the welding beam WB is reduced, the welding beam WB may irradiate a portion different from the pre-designed weld line, which can reduce reliability in the manufacture of secondary batteries. According to an exemplary embodiment, even though a first magnetic field is applied to the first aperture 120OP by the first sputter adsorption device 140, at the center of the first aperture 120OP, the magnetic field generated by the first magnetic field generating rod 141 and the magnetic field generated by the second magnetic field generating rod 143 cancel each other out or the strength of the first magnetic field is relatively reduced, thereby improving reliability in the manufacture of secondary batteries.

[0054] Figure 2 is a diagram illustrating the effects of a secondary battery manufacturing apparatus 100 according to an exemplary embodiment.

[0055] Referring to Figure 2, welding with a welding beam (WB) can be a keyhole weld, and irradiation with the welding beam (WB) can form a keyhole (KH) in the lead tab joint (LTC). Spatter (SPT) may be generated from the keyhole (KH).

[0056] If sputtered SPT adheres to the first masking fixture 120, the reliability of the welding beam (WB) treatment may decrease. Therefore, if the contamination level of the first masking fixture 120 exceeds critical conditions, cleaning of the first masking fixture 120 is necessary. Generally, the cleaning cycle of the first masking fixture 120 is relatively short compared to the management cycles of other elements (e.g., the replacement cycle of the oscillator), which can reduce the throughput of secondary battery manufacturing.

[0057] According to an exemplary embodiment, the first sputter adsorption device 140 can be configured to adsorb sputter SPT. The first sputter adsorption device 140 can prevent or mitigate the adhesion of sputter SPT to the masking jig 120. This allows for an extension of the cleaning cycle of the first masking jig 120, thereby improving the throughput of secondary battery manufacturing.

[0058] (Second Embodiment) Figure 3 is a diagram illustrating a secondary battery manufacturing apparatus 101 according to an exemplary embodiment.

[0059] Referring to Figure 3, the secondary battery manufacturing apparatus 101 may include a scanner head 110, a first masking jig 120, a second masking jig 130, a first sputter adsorption device 140, and a second sputter adsorption device 150.

[0060] The scanner head 110, the first masking jig 120, the second masking jig 130, and the first sputter adsorption device 140 are substantially the same as those described with reference to Figure 1, so their redundant descriptions will be omitted.

[0061] According to an exemplary embodiment, the second sputter adsorption device 150 can be coupled to the second masking jig 130. According to an exemplary embodiment, the second sputter adsorption device 150 may be located within the second opening 130OP of the second masking jig 130.

[0062] The second sputtering adsorption device 150 may include a third magnetic field generating rod 151 and a fourth magnetic field generating rod 153. The second sputtering adsorption device 150 may be configured to apply a magnetic field to the second aperture 130OP. The magnetic field applied to the second aperture 130OP by the second sputtering adsorption device 150 may be called the second magnetic field.

[0063] According to an exemplary embodiment, a third current can be applied to the third magnetic field generating rod 151, and a fourth current can be applied to the fourth magnetic field generating rod 153. This allows the third magnetic field generating rod 151 and the fourth magnetic field generating rod 153 to be configured to apply the magnetic fields induced by the third and fourth currents to the second aperture 130OP.

[0064] In this case, the magnetic field generated by the third magnetic field generating rod 151 in the central portion of the second aperture 130OP may be opposite to the magnetic field generated by the fourth magnetic field generating rod 153. In the central portion of the second aperture 130OP, the intensity of the magnetic field generated by the third magnetic field generating rod 151 may be substantially the same as the intensity of the magnetic field generated by the fourth magnetic field generating rod 153.

[0065] According to an exemplary embodiment, the intensity of the second magnetic field in the central portion of the second aperture 130OP may differ from the intensity of the second magnetic field in the edge portion of the second aperture 130OP. According to an exemplary embodiment, the intensity of the second magnetic field in the central portion of the second aperture 130OP may be less than the intensity of the second magnetic field in the edge portion of the second aperture 130OP. According to an exemplary embodiment, in the central portion of the second aperture 130OP, the magnetic field generated by the third magnetic field generating rod 151 can be canceled out by the magnetic field generated by the fourth magnetic field generating rod 153. The definitions of the central portion and edge portion of the second aperture 130OP follow substantially the same manner as those of the first aperture 120OP, so their redundant explanations are omitted.

[0066] According to an exemplary embodiment, a non-zero second magnetic field at the center of the second aperture 130OP can deflect the welding beam WB, which can reduce the straightness of the welding beam WB. When the straightness of the welding beam WB is reduced, the welding beam WB may irradiate a portion other than the pre-designed weld line, which can reduce reliability in the manufacture of secondary batteries.

[0067] According to an exemplary embodiment, even though a second magnetic field is applied to the second aperture 130OP by the second sputtering adsorption device 150, the magnetic field generated by the third magnetic field generating rod 151 and the magnetic field generated by the fourth magnetic field generating rod 153 cancel each other out or the strength of the second magnetic field is relatively reduced in the center of the second aperture 130OP, thereby improving reliability in the manufacture of secondary batteries.

[0068] The present disclosure has been described in more detail above with reference to the drawings and embodiments. However, the configurations described in the drawings or embodiments described herein represent only one embodiment of the present disclosure and do not represent the entire technical concept of the present disclosure. Therefore, there may be various equivalents and modifications that can be substituted for them at the time of filing.

Claims

1. A first masking jig includes a first opening that pressurizes the first surface of the lead-tab assembly of a battery cell and exposes the first surface, A first sputtering adsorption device coupled to the first masking jig, A secondary battery manufacturing apparatus comprising: a scanner head configured to irradiate the lead-tab assembly with a laser beam so as to melt the lead-tab assembly.

2. The secondary battery manufacturing apparatus according to claim 1, wherein the first sputtering adsorption apparatus is configured to apply a first magnetic field to the first opening.

3. The secondary battery manufacturing apparatus according to claim 2, wherein the strength of the first magnetic field at the central portion of the first opening is different from the strength of the first magnetic field at the edge portion of the first opening.

4. The secondary battery manufacturing apparatus according to claim 2, wherein the strength of the first magnetic field at the central portion of the first opening is less than the strength of the first magnetic field at the edge portion of the first opening.

5. The secondary battery manufacturing apparatus according to claim 2, wherein the first sputter adsorption apparatus includes a first magnetic field generating rod and a second magnetic field generating rod configured to generate the first magnetic field.

6. The secondary battery manufacturing apparatus according to claim 5, wherein the direction of the first current applied to the first magnetic field generating rod is opposite to the direction of the second current applied to the second magnetic field generating rod.

7. The secondary battery manufacturing apparatus according to claim 5, wherein at the center of the first opening, the magnetic field generated by the first magnetic field generating rod cancels out the magnetic field generated by the second magnetic field generating rod.

8. A second masking jig includes a second opening that pressurizes the second surface of the lead-tab assembly opposite to the first surface of the lead-tab assembly, exposing the second surface, The secondary battery manufacturing apparatus according to claim 1, further comprising a second sputter adsorption device coupled to the second masking jig.

9. The secondary battery manufacturing apparatus according to claim 8, wherein the second sputtering adsorption apparatus is configured to apply a second magnetic field to the second opening.

10. The secondary battery manufacturing apparatus according to claim 9, wherein the strength of the second magnetic field at the central portion of the second aperture is different from the strength of the second magnetic field at the edge portion of the second aperture.

11. The secondary battery manufacturing apparatus according to claim 9, wherein the strength of the second magnetic field in the central portion of the second aperture is less than the strength of the second magnetic field in the edge portion of the second aperture.

12. The secondary battery manufacturing apparatus according to claim 9, wherein the second sputter adsorption apparatus includes a third magnetic field generating rod and a fourth magnetic field generating rod configured to generate the second magnetic field.

13. The secondary battery manufacturing apparatus according to claim 12, wherein the direction of the third current applied to the third magnetic field generating rod is opposite to the direction of the fourth current applied to the fourth magnetic field generating rod.

14. The secondary battery manufacturing apparatus according to claim 12, wherein at the center of the second opening, the magnetic field generated by the third magnetic field generating rod cancels out the magnetic field generated by the fourth magnetic field generating rod.

15. A first masking jig includes a first opening that pressurizes the first surface of the lead-tab assembly of a battery cell and exposes the first surface, A second masking jig includes a second opening that pressurizes the second surface of the lead-tab assembly opposite to the first surface of the lead-tab assembly, exposing the second surface, A second sputtering adsorption device coupled to the second masking jig, A secondary battery manufacturing apparatus comprising: a scanner head configured to irradiate a first surface of the lead-tab assembly with a laser beam so that the lead-tab assembly melts;

16. The secondary battery manufacturing apparatus according to claim 15, wherein the second sputtering adsorption apparatus is configured to apply a second magnetic field to the second opening.

17. The secondary battery manufacturing apparatus according to claim 16, wherein the strength of the second magnetic field at the central portion of the second aperture is different from the strength of the second magnetic field at the edge portion of the second aperture.

18. The secondary battery manufacturing apparatus according to claim 16, wherein the strength of the second magnetic field in the central portion of the second aperture is less than the strength of the second magnetic field in the edge portion of the second aperture.

19. The secondary battery manufacturing apparatus according to claim 16, wherein the second sputter adsorption apparatus includes a third magnetic field generating rod and a fourth magnetic field generating rod configured to generate the second magnetic field.

20. The secondary battery manufacturing apparatus according to claim 19, wherein the direction of the third current applied to the third magnetic field generating rod is opposite to the direction of the fourth current applied to the fourth magnetic field generating rod.

21. The secondary battery manufacturing apparatus according to claim 19, wherein at the center of the second opening, the magnetic field generated by the third magnetic field generating rod cancels out the magnetic field generated by the fourth magnetic field generating rod.