A nuclear battery in a safety metal can device using a tandem CVD diamond cell module structure.

Abstract

A nuclear battery in a safety metal container device using a tandem type CVD diamond cell module structure is provided, utilizing high-level or low-level radioactive waste including debris from meltdowns. [Solution] The nuclear battery of a safety metal container device using a tandem-type CVD diamond cell module structure has a thallium layer 2 and a lead layer 3 for blocking ionizing radiation arranged in parallel inside a metal container 1 having a cubic or rectangular plane, and a modular structure in which a group of tandem-type CVD diamond cells in series are connected to a cooled metal container 5 that dissipates heat using a cooling layer 8 using circulating water, and the DC electromotive force of the long-term conversion power generated by the tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer 10 covered with a radiation-resistant and insulating CVD diamond thin film layer 9 is connected to the cooled metal container 5, which dissipates heat using a cooling layer 8 using circulating water. The group is divided into several groups and connected to bypass diamond diodes, and the increased power that is in a conductive state without being affected by deterioration is utilized to enhance the shielding of ionizing radiation.

Description

[Technical field]

[0001] This invention relates to a nuclear battery with a safety metal container device using a tandem-type CVD diamond cell module structure, in which radioactive waste from nuclear fission reaction nuclear power generation or nuclear fusion reactor power generation is sealed in a metal container, and the ionizing radiation emitted from the radioactive material is converted into electricity using a tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer, and utilized. [Background technology]

[0002] The Japan Atomic Energy Agency's (JAEA) fast reactor Joyo is part of the nuclear fuel cycle, which extracts plutonium and other materials from spent nuclear fuel at nuclear power plants and reuses them. It began operation in 1977, but was shut down due to equipment problems. If it is restarted, it will advance research and development of fast reactors, which the government positions as the next generation of nuclear reactors. J-Power announced that it will postpone the planned start of safety measures at the Oma Nuclear Power Plant, which is currently under construction. This is the sixth postponement due to the prolonged review by the Nuclear Regulation Authority. The target start of operation, which is set for fiscal year 2030, will not be changed. The intermediate storage facility in Mutsu City, Aomori Prefecture, will temporarily store spent nuclear fuel until it can be transported to a reprocessing plant. It is said that the government will begin considering where to transport the fuel from the intermediate storage facility, with the reprocessing plant in Rokkasho Village, Aomori Prefecture in mind. Interim storage and reprocessing are important steps in the nuclear fuel cycle, which is the government's basic policy, but the construction of a reprocessing plant is lagging behind. There are concerns within Aomori Prefecture that the interim storage may "turn into permanent storage." [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent application No. 2020-136026 [Patent Document 2] Patent application No. 2020-112115 [Patent Document 3] Patent Application No. 2020-077761 Utility Model Registration Document 1 Utility Application No. 2024-003737 Utility Model Registration Document 2 Utility Model Registration No. 3245038 Utility Model Registration Document 3 Utility Model Registration No. 3245277 Utility Model Registration Document 4 Utility Model Registration No. 3243275 Utility Model Registration Document 5 Utility Model Registration No. 3242297 Utility Model Registration Document 6 Utility Model Registration No. 3239423 Utility Model Registration Document 7 Utility Model Registration No. 3238830 Utility Model Registration Document 8 Utility Model Registration No. 3238365 Utility Model Registration Document 9 Utility Model Registration No. 3238270 Utility Model Registration Document 10 Utility Model Registration No. 3233214 Utility Model Registration Document 11 Utility Model Registration No. 3225438 Non-Patent Documents

[0004] Cited non-patent literature 1 Edited by the "All about Nuclear Power" Editorial Committee, All about Nuclear Power, Chapter 1 Nuclear Energy 1-3 Various Nuclear Reactors (1) Types of Nuclear Reactors p8-10, Chapter 10 10-5 Expectations for the Large-Scale Project "International Thermonuclear Experimental Reactor (ITER)" - Japan's Important Role - p291-295, References 2. Relationship between radiation and humans ▲2▼ What is radiation? p306, (6) Radioactive waste ▲1▼ What is radioactive waste? p341, ▲4▼ Waste treatment methods for nuclear power generation, ▲5▼ Basic concepts of radioactive waste treatment and disposal p344, (7) Others ▲1▼ Overview of the nuclear fuel cycle facility in Rokkasho Village, Aomori Prefecture p347, 10. "The sun on earth" in the hands of humanity ▲1▼ Main methods of nuclear fusion devices currently under development p410, ▲4▼ Radioactive waste from nuclear fusion reactors and its disposal, Radioactive waste disposal scenarios p414, 2003 edition, Independent Administrative Institution National Printing Bureau. Cited non-patent literature 2 Supervised by Fujimori Naoharu, Shikata Shinichi, The Frontline of Diamond Electronics "Popular Edition", Chapter 2: Single Crystal Diamond Gas Phase Synthesis p15-22, Chapter 4: Nanocrystalline Diamond Thin Film p36-44, Chapter 6: Semiconductor Properties p63-71, Chapter 7: Semiconductor Properties of p-Type Homoepitaxial Diamond Thin Film p75-84, Chapter 8: n-Type Doping and Semiconductor Properties p86-98, 2014 Edition, CMC Publishing Co., Ltd. Cited non-patent literature 3 Nihon Keizai Shimbun, Startup Procurement File, Okuma Diamond Device, Aiming to produce and commercialize diamond semiconductors that can withstand high temperatures and high radiation concentrations, Hokkaido University, National Institute of Advanced Industrial Science and Technology startup, page 16 (Business 2), published on October 31, 2024, Nihon Keizai Shimbun. Cited Non-Patent Document 4 Author ▲C▼ Yoshiharu Horikoshi, Photovoltaic Power Generation: From the Basics to Introduction to Power Systems, Chapter 8 Materials and Structures Used in Solar Cells 8.2.2 Manufacturing Process of Crystalline Si Solar Cells p102-107, 2020 Edition, Uchida Rokakuho Co., Ltd. Cited Non-Patent Document 5 Author Michio Inagaki, Carbon: Old and New Materials, Chapter 1 Carbon in Our Lives 4 Graphite Film in the Keyboard: Preparation of Graphite Sheets from Expanded Graphite p69-71, Remarkable Anisotropy of Flexible Graphite Sheets p71-72, 2009 Edition, Kogyo Chosakai Co., Ltd.Cited Non-Patent Document 6: Nihon Keizai Shimbun, Cycle Policy Continues to be Postponed, Nuclear Fuel to be Stored in Interim Storage, Page 1, Published August 28, 2024, Nihon Keizai Shimbun. Cited Non-Patent Document 7: Nihon Keizai Shimbun, From Academia, Nuclear Fuel By-Products to Batteries, Page 21 (Science Frontier), Published October 1, 2024, Nihon Keizai Shimbun. Summary of the Invention [Problem to be solved by the invention]

[0005] Nuclear fission reaction A major issue for Japan in utilizing nuclear power generation is that the destination of high-level radioactive waste, including that from the decommissioning of the Fukushima Daiichi Nuclear Power Plant, and low-level radioactive waste has not been decided. The first interim storage facility in the country to accept spent nuclear fuel will be up and running in Mutsu City, Aomori Prefecture, as early as September 2024. The country places the "cycle" at the center of its nuclear policy. The policy is to reprocess spent nuclear fuel from nuclear power generation at Japan Nuclear Fuel's plant, extract plutonium and uranium, and use it again as fuel. If it is to be used repeatedly, a reprocessing plant is essential. Japan Nuclear Fuel has announced the 27th postponement of the completion of its reprocessing plant. Electric power companies have no choice but to store spent nuclear fuel on the premises of each nuclear power plant. If the cycle does not start, Mutsu City will become a disposal site rather than an "interim storage site." The Federation of Electric Power Companies of Japan has requested Aomori Prefecture, which will accept the waste generated when reprocessing spent nuclear fuel in France, to change the storage method, but issues remain. The Japan Atomic Energy Agency is developing a storage battery that uses depleted uranium, a by-product of the fuel manufacturing process for nuclear power plants. The "redox flow battery" is a stationary, container-type storage battery with a huge tank, and uses depleted uranium instead of the rare metal vanadium as the material to store electricity. The radiation emitted by depleted uranium is weak, and its impact on the human body is said to be relatively small. The aim is to reduce the cost of storage batteries and reduce the amount of depleted uranium stored in Japan. The aim is to put the battery to practical use by 2035 as a storage battery for storing surplus electricity from renewable energy sources. Japan's biggest challenge in utilizing nuclear power is the fact that it has not yet decided what to do with the high-level and low-level radioactive waste, including about 880 tonnes of debris from the meltdowns at Tokyo Electric Power Company's Fukushima Daiichi Units 1 to 3. High-level radioactive waste or low-level radioactive waste from nuclear fission reactors (Pressurized Water Reactors (PWR), Boiling Water Reactors (BWR), Heavy Water Reactors, Gas-Cooled Reactors, etc.), next-generation reactors (Innovative Light Water Reactors, Small Modular Reactors, High Temperature Gas Reactors, Fast Reactors), and floating reactors (Small Modular Reactors (SMR), Molten Salt Fast Reactors (MCFR)). There is no clear method for treating, disposing of, or utilizing low-level radioactive waste from nuclear fusion reactors (Tokamak, Helical, Mirror, Reversed Field Pinch, Inertial Confinement), the International Thermonuclear Experimental Reactor ITER, or the prototype nuclear fusion reactor CFETR being developed by China. Nuclear power cannot be ignored when considering decarbonization and a stable supply of energy. The biggest issue is that if the government fails to take action, the burden will be passed on to the next generation. [Means for solving the problem]

[0006] In a tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer module structure, radioactive waste from nuclear fission reactions of radioactive decay nuclides (nuclear power generation) or nuclear fusion reactor power generation is enclosed in a metal container with a cubic or rectangular parallelepiped plane, and the ionizing radiation emitted from the radioactive material is converted into electricity. High-level radioactive waste or low-level radioactive waste including debris from nuclear fission nuclear power plant meltdowns, or low-level radioactive waste from nuclear fusion reactor power plant are sealed in a metal container, and the charged particle beams of ionizing radiation "α rays and β rays" and electromagnetic waves "γ rays and X-rays" emitted from radioactive materials are converted into electricity. The top cell layer of the tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer is an np-type or pn-type CVD diamond semiconductor thin film conversion layer doped with arsenic (As) or gallium (Ga), and the i-type intrinsic CVD diamond thin film conversion layer is a tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer with a flexible graphite layer on the entrance surface, and the bottom cell layer is an np-type or pn-type CVD diamond semiconductor thin film conversion layer doped with phosphorus (P) or indium (In). A nuclear battery for a safety metal container device using a tandem-type CVD diamond cell module structure, characterized by: improving electromotive force by providing a transparent opening in the graphite sheet electrode for transmitting charged particle beams (alpha and beta beams); improving heat dissipation by a cooling layer using circulating water for dissipating heat from the tandem-type CVD diamond semiconductor thin-film ionizing radiation conversion layer by providing a heat dissipation opening for thermal conduction in the flexible graphite sheet electrode on the back side of the tandem-type CVD diamond semiconductor thin-film ionizing radiation conversion layer; or stopping non-charged particle beams (neutron beams) and strengthening ionizing radiation shielding by providing a lead-thallium (PbTl) alloy layer or a lead (Pb) layer and thallium (Tl) layer in parallel. The nuclear battery for a safety metal container device using a tandem-type CVD diamond cell module structure, characterized by:

[0007] A nuclear battery with a safety metal container device using a tandem-type CVD diamond cell module structure, characterized by improved heat dissipation from the heat generated by the tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer installed in a metal container through an air-cooling layer with forced air circulation, and enhanced ionizing radiation shielding by a lead-thallium (PbTl) alloy layer or a lead (Pb) layer and thallium (Tl) layer installed in parallel. This nuclear battery utilizes the electricity generated by long-term conversion power generation after storage and safekeeping of the metal container, burial or geological disposal.

[0008] A group of tandem CVD diamond cells in a modular structure in which the DC electromotive forces of the tandem CVD diamond semiconductor thin film ionizing radiation conversion layers mounted in a metal container are connected in series are divided into several groups, and diamond diodes are connected between them so that they have the opposite polarity to the tandem CVD diamond cells.The bypass diamond diodes are biased in the positive direction by the electromotive force of the normal tandem CVD diamond cell group, becoming conductive, allowing current to flow without being affected by deterioration of the tandem CVD diamond cell group.Safety using a tandem CVD diamond cell module structureA nuclear battery with a safe metal container device that uses a tandem CVD diamond cell module structure to utilize the power generated by the long-term conversion power generation of the metal container. Effect of the Invention

[0009] A nuclear battery with a safety metal container device that uses a tandem-type CVD diamond cell module structure that utilizes increased power generated by a module structure in which high-level or low-level radioactive waste is sealed in a cubic or rectangular metal container and the direct current electromotive force of a tandem-type CVD diamond semiconductor thin-film ionizing radiation conversion layer that converts the ionizing radiation emitted from the radioactive material into electricity is connected in series, and the battery has enhanced shielding against ionizing radiation. [Brief description of the drawings]

[0010] [Figure 1] Reference side and cross-sectional views of a safety metal container device using a tandem-type CVD diamond cell module structure, in which radioactive waste is sealed in a metal container 1 having a cubic or rectangular parallelepiped shape, a thallium (Tl) layer 2 and a lead (Pb) layer 3 arranged in parallel in a metal container 1, and a tandem-type CVD diamond semiconductor thin-film ionizing radiation conversion layer 10 covered with a CVD diamond thin-film layer 9 in a cooled metal container 5 with a circulating water cooling layer 8 or an air-cooled layer 8 with forced air circulation. [Diagram 2]Reference side and cross-sectional views of a safety metal container device using a tandem-type CVD diamond cell module structure, in which radioactive waste is sealed in a metal container 1 having a lead-thallium (PbTl) alloy layer 4 in a metal container 1 shaped with a cubic or rectangular parallelepiped plane, and a tandem-type CVD diamond semiconductor thin-film ionizing radiation conversion layer 10 covered with a CVD diamond thin-film layer 9 in a cooled metal container 5 with a circulating water cooling layer 8 or an air-cooled layer 8 with forced air circulation. [Diagram 3] A radiation-resistant insulating CVD diamond thin film layer 11 and a flexible graphite sheet electrode 12 with a transmission hole 12-1 are provided on the incident surface of the ionizing radiation. The top cell layer is made of arsenic (As) or gallium (Ga) doped np-type CVD diamond semiconductor thin film conversion layers 13-14 and an i-type intrinsic CVD diamond thin film layer 15 to suppress recombination due to a heterojunction. The bottom cell layer is made of phosphorus (P) or indium (In) doped np-type CVD diamond semiconductor thin film layers 16-17. A reference cross-sectional diagram of a safety metal container device using a tandem-type CVD diamond cell module structure, in which a flexible graphite sheet electrode 18 with a heat sink 18-1 and a radiation-resistant, insulating CVD diamond thin film layer 19 are provided on the tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layers 13·14·15·16·17, and a metal container 1 with a thallium (Tl) layer 2 and lead (Pb) layer 3 provided in parallel in a cooling volume metal container 5 of a circulating water cooling layer 8 or an air-cooled layer 8 with forced air circulation. [Figure 4]A cross-sectional view of a safety metal container device using a tandem-type CVD diamond cell module structure, in which a flexible graphite sheet electrode 12 with a radiation-resistant and insulating CVD diamond thin film layer 11 and a transmission hole 12-1 is provided on the ionizing radiation incident surface, arsenic (As) or gallium (Ga) doped np-type CVD diamond semiconductor thin film conversion layers 13·14 are provided on the top cell layer, and a flexible graphite sheet electrode 18 with a heat sink 18-1 and a radiation-resistant and insulating CVD diamond thin film layer 19 are provided on tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layers 13·14·16·17 junctioned with phosphorus (P) or indium (In) doped np-type CVD diamond semiconductor thin film conversion layers 16·17 are provided on the bottom cell layer, and a circulating water cooling layer 8 or forced air cooling layer 8 is provided with a lead-thallium (PbTl) alloy layer 4 in the cooling metal container 5. [Diagram 5] This is a reference plan view of an electromotive force improvement in which a transmission hole 12-1 is provided in a flexible graphite sheet electrode 12 on the entrance surface of a tandem-type CVD diamond semiconductor thin-film ionizing radiation conversion layer 10 to allow the transmission of charged particle beams "α rays and β rays," or a heat dissipation hole 18-1 is provided in a flexible graphite sheet electrode 18 on the back surface to dissipate heat generated by the tandem-type CVD diamond semiconductor thin-film ionizing radiation conversion layer through a cooling layer 8 with circulating water or an air-cooling layer 8 with forced air circulation. [Figure 6] Reference cross-sectional view of a flexible graphite sheet electrode 12 having a transmission opening 12-1 on the incident surface of a tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer 10, and a flexible graphite sheet electrode 18 having a heat dissipation opening 18-1 on the back surface. [Figure 7] FIG. 2 is a reference diagram of a tandem CVD diamond cell 20 connected to a module structure. [Figure 8]A reference diagram of a module structure and bypass diode in which a tandem CVD diamond cell group 24 with a modular structure in which DC electromotive forces are connected in series is divided and diamond diodes 22 are connected between the divided parts so that they have the opposite polarity to the CVD diamond cells.The bypass diamond diode 23 is biased in the positive direction by the electromotive force of the tandem CVD diamond cell group 21 and becomes conductive, allowing current to flow without being affected by deterioration of the tandem CVD diamond cell group 21. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Diamond synthesis methods are broadly divided into high-temperature, high-pressure synthesis and chemical vapor synthesis (CVD). CVD diamond has a band gap of 5.48 eV and has semiconductor properties. CVD diamond thin films are nanocrystalline diamond thin films produced by high-power microwave plasma CVD, microwave plasma CVD, and surface wave plasma CVD. CVD diamond is considered to be a material that has the highest or near-highest values ​​of thermal conductivity, elastic constant, translucency, heat resistance, chemical resistance, radiation resistance, insulation, and dielectric breakdown among all substances. "Authors of cited non-patent document 2" Nanocrystalline diamond thin film, Nanotube Application Research Center, National Institute of Advanced Industrial Science and Technology. Semiconductor properties, Diamond Research Center, National Institute of Advanced Industrial Science and Technology. Semiconductor properties of p-type homoepitaxial diamond thin film, Sensor Materials Center, National Institute for Materials Science. n-type doping and semiconductor properties, Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Sensor Materials Center, National Institute for Materials Science. The tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer of the present invention has a top cell layer of an np-type or pn-type CVD diamond semiconductor thin film conversion layer doped with arsenic (As) or gallium (Ga) and having a band gap of 1.43 eV, which is considered to be resistant to radiation, and a bottom cell layer of a tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer junction with an np-type or pn-type CVD diamond semiconductor thin film conversion layer doped with phosphorus (P) or indium (In) and having a band gap of 1.35 eV, which is considered to be resistant to radiation. Or, a tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer with nip-type or pin-type junction has a similar configuration.

[0012] CVD diamond belongs to the same group 14 element as carbon (C). n-type CVD diamond semiconductor thin film can be doped with group 15 elements such as nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), and bismuth (Bi). p-type CVD diamond semiconductor thin film can be doped with group 13 elements such as boron (B), aluminum (Al), gallium (Ga), indium (In), and thallium (Tl). However, when nitrogen (N) is added to diamond, deep donor levels and carrier traps are introduced, making it an insulator, and its use as a semiconductor is not expected. "Author of cited non-patent document 2" Effect of nitrogen addition, Diamond Research Center, National Institute of Advanced Industrial Science and Technology. The tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer of the present invention has a top cell layer provided with an np-type or pn-type CVD diamond semiconductor thin film conversion layer doped with arsenic (As) or gallium (Ga), which is considered to be resistant to radiation, and a bottom cell layer formed of a tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer junction with an np-type or pn-type CVD diamond semiconductor thin film conversion layer doped with phosphorus (P) or indium (In), which is also considered to be resistant to radiation. The nip-type or pin-type with an i-type CVD diamond thin film layer sandwiched therebetween also has a similar configuration.

[0013] Since the hexagonal net planes of the raw graphite are selectively oriented so that they are parallel to the sheet surface, the physical properties differ greatly between the parallel and perpendicular directions. The electrical resistivity perpendicular to the sheet surface is more than 100 times that of the parallel direction. The sheet conducts electricity more than 100 times more easily in the parallel direction than in the perpendicular direction, and the thermal conductivity is about 40 times higher in the parallel direction. The thermal conductivity of flexible graphite sheet is almost comparable to that of metals such as copper or aluminum. Flexible graphite sheet can withstand temperatures of more than 3,000°C. After the graphite particles are converted into expanded graphite, they can be compressed into sheets and rolled through rolls to obtain sheets of any thickness. The sheets are soft and can be punched into various shapes. The graphite sheets are rolled and stored. The sheets made in this way are called flexible graphite sheets. The transparent opening provided in the flexible graphite sheet electrode used in the tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer of this invention is for improving conversion efficiency by providing transmission of charged particle beams (α-rays and β-rays), and for improving heat dissipation by providing a heat dissipation port (CVD diamond has 5.5 times the heat dissipation capacity of copper) for dissipating heat generated by the tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer. The transparent opening or heat dissipation port is a configuration using a flexible graphite sheet electrode formed by punching a flexible graphite sheet.

[0014] The order of the metal container with parallel layers of lead (Pb) and thallium (Tl) to shield against the charged particle rays (α-rays and β-rays) and electromagnetic waves (γ-rays and X-rays) of ionizing radiation is as follows: the thallium (Tl) layer and the lead (Pb) layer are placed in parallel on the metal container from the side of the ionizing radiation incident surface emitted by radioactive materials of the radionuclide decay series (thorium series, uranium series, actinium series). Plutonium 241 ( 241 The neptunium series, which starts with Pu, has layers of lead (Pb) and thallium (Tl) in parallel in a metal container to enhance shielding from ionizing radiation.

[0015] Neutron rays, a non-charged particle beam that can be stopped by placing water or concrete, are a type of light water 1H and heavy water 2 Tritium is produced by neutron irradiation of H(DO, DHO) 3 H(T) tritium is produced. Its half-life is 12.3 years. In this invention, the circulating water in the cooling layer stops the non-charged particle beam "neutron beam."

[0016] The reference side and cross-sectional views are shown in Figure 1. A thallium (Tl) layer 2 and a lead (Pb) layer 3 are provided in parallel inside a metal container 1 having a cubic or rectangular parallelepiped plane, a cooling metal container 5 with a cooling layer 8 using circulating water or an air-cooling layer 8 with forced air circulation is covered with a radiation-resistant and insulating CVD diamond thin film layer 9, and radioactive waste is sealed in the metal container 1 provided with a radiation-resistant and insulating CVD diamond thin film layer 9 on a tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer 10, and the ionizing radiation charged particle beams "α rays and β rays" and electromagnetic waves "γ rays and X-rays" emitted from radioactive materials are converted into electricity. A nuclear battery for a safety metal container device using a tandem-type CVD diamond cell module structure that utilizes the electricity generated by the long-term conversion power generation of the tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer 10, dissipating heat from the tandem-type CVD diamond cell 10 through a cooling layer 8 using circulating water and stopping non-charged particle beams "neutron rays" or dissipating heat through an air-cooling layer 8 with forced air circulation, and strengthening the shielding from ionizing radiation by providing a lead (Pb) layer 3 and a thallium (Tl) layer 2 in parallel in the metal container 1. The nuclear battery for a safety metal container device using a tandem-type CVD diamond cell module structure that utilizes the electricity generated by the long-term conversion power generation of the tandem-type CVD diamond cell 10 after storage, keeping, burial or geological disposal of the metal container 1.

[0017] The reference side and cross-sectional views are shown in Figure 2. A lead-thallium (PbTl) alloy layer 4 is provided on the inside of a metal container 1 having a cubic or rectangular parallelepiped flat surface, a cooling metal container 5 with a cooling layer 8 using circulating water or an air-cooling layer 8 with forced air circulation is covered with a radiation-resistant and insulating CVD diamond thin film layer 9, and radioactive waste is sealed in the metal container 1 provided with a radiation-resistant and insulating CVD diamond thin film layer 9 on a tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer 10, and the tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer 10 converts the charged particle beams of ionizing radiation "α rays and β rays" and electromagnetic waves "γ rays and X-rays" emitted from radioactive materials into electricity. A nuclear battery for a safety metal container device using a tandem-type CVD diamond cell module structure that utilizes the electricity from the perpetual conversion power generation of the above-mentioned metal container 1, and dissipates heat from the tandem-type CVD diamond semiconductor thin-film ionizing radiation conversion layer 10 through a cooling layer 8 using circulating water and by stopping non-charged particle beams "neutron beams" or dissipating heat through an air-cooling layer 8 with forced air circulation, and enhances shielding from ionizing radiation by providing a lead-thallium (PbTl) alloy layer 4 on the metal container 1. The nuclear battery for a safety metal container device using a tandem-type CVD diamond cell module structure that utilizes the electricity from the perpetual conversion power generation of the above-mentioned metal container 1 after storage, keeping, burial or geological disposal.

[0018] The cross-sectional view of FIG. 3 is an example. Radioactive waste is sealed in a metal container, and a radiation-resistant insulating CVD diamond thin film layer 11 and a flexible graphite sheet electrode 12 of a transmission port 12-1 are provided on the incident surface of ionizing radiation emitted from the radioactive material in the top cell layer. The np-type CVD diamond semiconductor thin film conversion layer 13·14 of an arsenic (As) doped n-type CVD diamond semiconductor thin film layer 13 or a gallium (Ga) doped p-type CVD diamond semiconductor thin film layer 14 junction is connected to an i-type intrinsic CVD diamond thin film layer 15 to suppress recombination due to a heterojunction. The bottom cell layer is connected to a tandem CVD diamond semiconductor thin film of an np-type CVD diamond semiconductor thin film conversion layer 16·17 junction of a phosphorus (P) doped n-type CVD diamond semiconductor thin film layer 16 or an indium (In) doped p-type CVD diamond semiconductor thin film layer 17 junction. A nuclear battery for a safety metal container device using a tandem-type CVD diamond cell module structure, in which heat generated by a tandem-type CVD diamond semiconductor thin-film ionizing radiation conversion layer 10 having a flexible graphite sheet electrode 18 at a heat sink 18-1 and a radiation-resistant, insulating CVD diamond thin-film layer 19 provided on conductive thin-film ionizing radiation conversion layers 13·14·15·16·17 is dissipated by a cooling layer 8 using circulating water in a cooling metal container 5, and heat is dissipated by an air-cooling layer 8 that stops non-charged particle beams (neutron beams) or by forced air circulation, and ionizing radiation shielding is strengthened by providing a lead (Pb) layer 3 and a thallium (Tl) layer 2 in parallel on the metal container 1. The battery utilizes the electricity generated by the long-term conversion power generation after storage, safekeeping, burial or geological disposal of the metal container 1.

[0019] The cross-sectional view of FIG. 4 shows the reference. Radioactive waste is sealed in a metal container, and a radiation-resistant insulating CVD diamond thin film layer 11 and a flexible graphite sheet electrode 12 of a transmission port 12-1 are provided on the incident surface of the ionizing radiation emitted from the radioactive material. The top cell layer is provided with np-type CVD diamond semiconductor thin film conversion layers 13·14 of arsenic (As)-doped n-type CVD diamond semiconductor thin film layer 13 or gallium (Ga)-doped p-type CVD diamond semiconductor thin film layer 14 junctions, and the bottom cell layer is provided with a tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer 16·17 of np-type CVD diamond semiconductor thin film conversion layers 16·17 of phosphorus (P)-doped n-type CVD diamond semiconductor thin film layer 16 or indium (In)-doped p-type CVD diamond semiconductor thin film layer 17 junctions. A nuclear battery for a safety metal container device using a tandem-type CVD diamond cell 10 module structure in which heat generated by a tandem-type CVD diamond semiconductor thin-film ionizing radiation conversion layer 10 having a flexible graphite sheet electrode 18 at a heat dissipation port 18-1 and a radiation-resistant, insulating CVD diamond thin-film layer 19 at 3·14·16·17 is dissipated by a cooling layer 8 using circulating water in a cooling metal container 5, and heat is dissipated by an air-cooled layer 8 with forced air circulation to stop non-charged particle beams "neutron beams", and ionizing radiation shielding is strengthened by providing a lead-thallium (PbTl) alloy layer 4 on the metal container 1. The battery utilizes the electricity generated by long-term conversion power generation after storage, safekeeping, burial or geological disposal of the metal container 1.

[0020] This is shown in the reference plan view of Figure 5. A transparent opening 12-1 is provided in the flexible graphite sheet electrode 12 on the entrance surface of the tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer 10, and this transparent opening 12-1 improves the conversion efficiency by transmitting the charged particle beams "α-rays and β-rays." A heat dissipation opening 18-1 is provided in the flexible graphite sheet electrode 18 on the back surface of the tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer 10, and this heat dissipation opening 18-1 is provided to thermally conduct the heat generated by the tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer 10 to the CVD diamond thin film layer 19. Alpha (α) rays are stopped by paper. Beta (β) rays are stopped by a thin metal plate such as aluminum. Gamma (γ) rays and X-rays are stopped by a lead or thick iron plate. The flexible graphite sheet electrode 12 based on the reference 1, "What is radiation?," edited by the "All about atomic energy" editorial committee, is highly likely to shield the charged particle beams "α rays and β rays," and has a transparent opening 12-1 to allow the charged particle beams "α rays and β rays" to pass through, improving the conversion efficiency. The thermal conductivity of the flexible graphite sheet is said to be almost comparable to that of metals such as copper or aluminum. The thermal conductivity of copper is 4.0 (W / cm.K), and that of CVD diamond is 22 (W / cm.K). CVD diamond has a thermal conductivity and heat dissipation property that is 5.5 times that of copper, and is excellent in heat dissipation. A flexible graphite sheet electrode 18, which is a material that can withstand temperatures of 3,000°C or more, is provided with a heat dissipation port 18-1, and heat is dissipated by heat conduction to the CVD diamond thin film layer 19.

[0021] This is shown in the reference cross-sectional view of Figure 6. A transparent opening 12-1 is provided in flexible graphite sheet electrode 12 on the incident surface of the tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer, and a heat dissipation opening 18-1 is provided in flexible graphite sheet electrode 18 on the back surface.

[0022] The reference diagram is shown in Fig. 7. A connection configuration to a tandem type CVD diamond cell group 21 and a tandem type CVD diamond cell group 24 of a module structure using tandem type CVD diamond cells 20 in which DC electromotive force is connected in series.

[0023] The module structure and bypass diodes are shown in the reference diagram of FIG. 8. The module structure tandem CVD diamond cell group 24, which has a direct current electromotive force connected in series, is divided into several parts (three parts in the reference diagram), and the bypass diamond diode 23 is connected between the divided parts so that the diamond diode 22 has the opposite polarity to the tandem CVD diamond cell 21. When the module structure tandem CVD diamond cell group 24 is exposed to ionizing radiation and operates normally, a potential difference of + / - occurs at the output terminal of the module, and the electric field generated by each tandem CVD diamond cell group 21 biases all the bypass diamond diodes 23 in the reverse direction, so no current flows. If a problem such as deterioration occurs in the central tandem CVD diamond cell group 21, the entire module will not function. However, since the other tandem CVD diamond cell groups 21 generate electromotive forces normally, the bypass diamond diodes 23 are biased in the forward direction by this electromotive force and become conductive. As a result, the other normal tandem-type CVD diamond cell groups 21 can pass current without being affected by deterioration of the central tandem-type CVD diamond cell group 21. This is a configuration of a safety nuclear battery in a metal container 1 using a tandem-type CVD diamond cell 10 module structure.

[0024] High-level radioactive waste, including debris from a meltdown, or low-level radioactive waste is enclosed in a safety metal container 1 in which a nuclear battery is provided in a shape with a cubic or rectangular parallelepiped plane, and the ionizing radiation emitted from the radioactive material is converted into electricity. This nuclear battery is a safety metal container device using a tandem CVD diamond cell module structure that utilizes the power of secular conversion power generation with increased voltage and current due to a module structure in which the DC electromotive forces of tandem CVD diamond cells 10 are connected in series.

[0025] The diamond of the present invention is a CVD diamond formed by chemical vapor deposition, and the same applies to diamonds synthesized by high pressure and high temperature methods. [Explanation of symbols]

[0026] 1 Metal containers 1-1 Metal container lid 2 Thallium (Tl) layer 3 Lead (Pb) layer 4 Lead-thallium (PbTl) alloy layer 5 Cooling metal container 6 Cooling water inlet or air intake 7 Circulating water outlet or forced air circulation outlet 8 Cooling layer or air-cooling layer 9 Radiation-resistant and insulating CVD diamond thin film layer 10 Tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer 10 Tandem CVD diamond cell 11 Radiation-resistant and insulating CVD diamond thin film layer 12 Flexible graphite sheet electrode 12-1 Transmission port 13 Arsenic (As) doped n-type CVD diamond semiconductor thin film layer 14 Gallium (Ga) doped p-type CVD diamond semiconductor thin film layer 15 i-type intrinsic CVD diamond thin film layer 16 Phosphorus (P) doped n-type CVD diamond semiconductor thin film layer 17 Indium (In) doped p-type CVD diamond semiconductor thin film layer 18 Flexible graphite sheet electrode 18-1 Heat vent 19 Radiation-resistant and insulating CVD diamond thin film layer 20 Tandem CVD diamond cell 21 Tandem CVD Diamond Cell Group 22 Diamond Diode 23 Bypass Diamond Diode 24 Modular tandem CVD diamond cell array

Claims

1. In a tandem CVD diamond semiconductor thin film ionizing radiation conversion layer module structure, radioactive waste from nuclear fission reactions of radioactive decay nuclides (nuclear power generation) or nuclear fusion reactor power generation is enclosed in a metal container having a cubic or rectangular parallelepiped plane, and the ionizing radiation emitted from the radioactive material is converted into electricity. High-level radioactive waste or low-level radioactive waste including debris from the meltdown of nuclear fission nuclear power generation, or low-level radioactive waste from nuclear fusion reactor power generation is sealed in a metal container, and the charged particle rays "α rays and β rays" of ionizing radiation emitted from radioactive materials and electromagnetic waves "γ rays and X-rays" are converted into electricity by a tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer. The top cell layer of the tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer is an np-type or pn-type CVD diamond semiconductor thin film conversion layer doped with arsenic (As) or gallium (Ga), and the bottom cell layer is an np-type or pn-type CVD diamond semiconductor thin film conversion layer doped with phosphorus (P) or indium (In), and the flexible graphene on the entrance surface of the tandem-type CVD diamond semiconductor thin film ionizing radiation conversion layer is a junction of an np-type or pn-type CVD diamond semiconductor thin film conversion layer. a tandem-type CVD diamond cell module structure that utilizes a safe metal container device nuclear battery, characterized in that: an electromotive force is improved by providing a transparent opening in the graphite sheet electrode that allows the passage of charged particle beams (alpha beams and beta beams); or heat dissipation is improved by a cooling layer using circulating water to dissipate heat generated by the tandem-type CVD diamond semiconductor thin-film ionizing radiation conversion layer, which has a heat conduction opening in the flexible graphite sheet electrode on the back side of the tandem-type CVD diamond semiconductor thin-film ionizing radiation conversion layer; or non-charged particle beams (neutron beams) are stopped and ionizing radiation shielding is strengthened by providing a lead-thallium (PbTl) alloy layer or a lead (Pb) layer and a thallium (Tl) layer in parallel.

2. 2. A nuclear battery in a safety metal container device using the tandem CVD diamond cell module structure described in claim 1, characterized in that the heat generated by the tandem CVD diamond semiconductor thin film ionizing radiation conversion layer provided in the metal container is dissipated by an air-cooling layer with forced air circulation, and the shielding of ionizing radiation is strengthened by providing a lead-thallium (PbTl) alloy layer or a lead (Pb) layer and a thallium (Tl) layer in parallel.

3. A nuclear battery of a safety metal container device using a tandem CVD diamond cell module structure as described in claim 1 or claim 2, which utilizes the power of long-term conversion power generation of a safety metal container using a tandem CVD diamond cell module structure described in claim 1 or claim 2, in which a group of tandem CVD diamond cells having a modular structure in which the DC electromotive forces of tandem CVD diamond semiconductor thin film ionizing radiation conversion layers provided in a metal container are connected in series, and diamond diodes are connected between them so that they have the opposite polarity to the tandem CVD diamond cells, and the bypass diamond diodes are biased in the positive direction by the electromotive force of the normal tandem CVD diamond cell group, becoming conductive, allowing current to flow without being affected by deterioration of the tandem CVD diamond cell group.

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