Plasma Processing Equipment

Abstract

To provide a plasma processing apparatus capable of switching the potential state of a conductive member to which a voltage or current is applied from a power supply.SOLUTION: A plasma processing apparatus includes a processing container, a first conductive member disposed within the processing container, a second conductive member having a second surface facing a first surface of the first conductive member, a third member disposed on at least one of the first conductive member and the second conductive member and having a shape that changes with changes in temperature, and a control mechanism that provides the temperature change to the third member.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a plasma processing apparatus. [Background technology]

[0002] 2. Description of the Related Art A plasma processing apparatus is known in which a voltage or a current is applied to an upper electrode.

[0003] Patent Document 1 discloses a plasma processing apparatus having an electrode support made of a conductive material and an electrode plate made of silicon or SiC, and including an upper electrode supported on the top of a processing vessel via an insulating shielding member. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2020-109838 A Summary of the Invention [Problem to be solved by the invention]

[0005] Incidentally, in a plasma processing apparatus that applies a voltage or current to a conductive member such as the electrode support disclosed in Patent Document 1, when switching between a state in which the conductive member floats above the ground voltage when applying a voltage or current (Float state) and a state in which the conductive member is at the ground voltage (GND state), it is necessary to change the configuration of the conductive member.

[0006] In one aspect, the present disclosure provides a plasma processing apparatus capable of switching a potential state of a conductive member to which a voltage or current is applied from a power supply. [Means for solving the problem]

[0007] In order to achieve the above object, according to one aspect, a processing apparatus is provided, comprising: a processing vessel; a first conductive member disposed in the processing vessel; a second conductive member having a second surface facing a first surface of the first conductive member; a third member disposed on at least one of the first conductive member and the second conductive member, the third member changing its shape in response to a temperature change; and a control mechanism for applying the temperature change to the third member. A change in the shape of the third member switches between electrical continuity and non-conduction between the first conductive member and the second conductive member. A plasma processing apparatus is provided. Effect of the Invention

[0008] According to one aspect, it is possible to provide a plasma processing apparatus capable of switching a potential state of a conductive member to which a voltage or current is applied from a power supply. [Brief description of the drawings]

[0009] [Figure 1] 1 is a diagram showing an example of the configuration of a plasma processing system according to an embodiment; [Diagram 2] 4 shows an example of the upper electrode of the first embodiment when no DC is applied. [Diagram 3] 13 shows an example of the upper electrode of the first embodiment when DC is applied. [Figure 4] 13 shows an example of an upper electrode according to the second embodiment when no DC is applied. [Diagram 5] 13 shows an example of an upper electrode according to the second embodiment when DC is applied. [Figure 6] 13 shows an example of an upper electrode according to the third embodiment when no DC is applied. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0011] An example of the configuration of the plasma processing system will be described below. Fig. 1 is a diagram showing an example of the configuration of a plasma processing system according to an embodiment.

[0012] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a controller 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13 (also referred to as an upper electrode). The substrate support 11 is disposed in the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a part of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas exhaust port 10e for exhausting gas from the plasma processing space 10s. The sidewall 10a is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the plasma processing chamber 10 housing.

[0013] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W, and an annular region (ring support surface) 111b for supporting the ring assembly 112. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. In one embodiment, the main body 111 includes a base and an electrostatic chuck. The base includes a conductive member. The conductive member of the base functions as a lower electrode. The electrostatic chuck is disposed on the base. The upper surface of the electrostatic chuck has a substrate support surface 111a. The ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Although not shown, the substrate support 11 may include a temperature adjustment module configured to adjust at least one of the electrostatic chuck, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 111a.

[0014] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The shower head 13 also includes a conductive member. The conductive member of the shower head 13 functions as an upper electrode. In addition to the shower head 13, the gas introduction unit may include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0015] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include one or more flow modulation devices to modulate or pulse a flow rate of the at least one process gas.

[0016] The power source 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to a conductive member of the substrate support 11 and / or a conductive member of the showerhead 13. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power source 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more processing gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to the conductive member of the substrate support 11, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0017] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to the conductive member of the substrate support 11 and / or the conductive member of the shower head 13 via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the conductive member of the substrate support 11 and / or the conductive member of the shower head 13. The second RF generating unit 31b is coupled to the conductive member of the substrate support 11 via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated bias RF signal or signals are provided to the conductive members of the substrate support 11. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0018] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to a conductive member of the substrate support 11 and configured to generate a first DC signal. The generated first bias DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the first DC signal may be applied to another electrode, such as an electrode in an electrostatic chuck. In one embodiment, the second DC generator 32b is connected to a conductive member of the showerhead 13 and configured to generate a second DC signal. The generated second DC signal is applied to the conductive member of the showerhead 13. In various embodiments, at least one of the first and second DC signals may be pulsed. The first and second DC generating units 32a, 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.

[0019] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof. The plasma processing apparatus 1 also includes a baffle plate 14. The baffle plate 14 is provided between the side wall 10a and the substrate support 11 and regulates the flow of gas from the plasma processing space 10s to the gas exhaust port 10e.

[0020] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various steps described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control operations based on a program stored in the storage unit 2a2. The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0021] Next, an example of the upper electrode (shower head 13) of the plasma processing apparatus 1 will be further described with reference to Fig. 2 and Fig. 3. Fig. 2 shows an example of the upper electrode of the first embodiment when no DC voltage is applied. Fig. 3 shows an example of the upper electrode of the first embodiment when DC voltage is applied. In Fig. 3, the applied voltage or current is shown by a dashed line.

[0022] The plasma processing apparatus 1 includes an electrode plate 110, an electrode support (first conductive member) 120, a contactor 130, an energized actuator (third member) 140, an insulator 150, an annular member (second conductive member) 160, and an upper cover member 170. The electrode plate 110 and the electrode support 120 form an upper electrode.

[0023] The electrode plate 110 constitutes a surface facing the substrate support 11 which functions as a lower electrode. A gas inlet 13c (see FIG. 1) is also formed in the electrode plate 110. The electrode plate 110 is made of, for example, silicon, SiC, or the like.

[0024] The electrode support 120 detachably supports the electrode plate 110. A gas diffusion chamber 13b (see FIG. 1) is formed in the electrode support 120. The electrode support 120 is made of a conductive material, such as aluminum. The electrode plate 110 is disposed on the lower surface side of the electrode support 120. The electrode support 120 has an upper side with a larger diameter than the electrode plate 110, and has a surface (first surface) 121 facing the annular member 160.

[0025] A contactor 130 made of a conductive material is provided on the upper surface side of the electrode support 120. One end of a power feed rod 131 is connected to the contactor 130. The other end of the power feed rod 131 is connected to a power source 30 (DC power source 32, second DC generation unit 32b). As a result, the power source 30 applies a voltage or current (second DC signal) to the electrode support 120 and the electrode plate 110 via the power feed rod 131 and the contactor 130.

[0026] The insulator 150 is made of a non-conductive material such as alumina, etc. The insulator 150 is an annular member, and is disposed between the electrode support 120 and the annular member 160.

[0027] The annular member 160 is made of a conductive material, such as aluminum. The annular member 160 is a substantially cylindrical member, and supports the electrode support 120 via the insulator 150. The annular member 160 also has a surface (second surface) 161 that faces the surface 121 of the electrode support 120.

[0028] The top cover member 170 is made of a conductive material, such as aluminum, etc. The top cover member 170 is electrically connected to the annular member 160. The annular member 160 and the top cover member 170 are electrically connected to the side wall 10a of the plasma processing chamber 10 and are electrically grounded.

[0029] The actuator 140 is a member made of a shape memory alloy (SMA) whose shape changes when a temperature change is applied. The actuator 140 is an axially shaped member made of, for example, a Ni-Ti alloy, and when a temperature change is applied to the actuator 140B by applying a voltage or current to the electrode support 120 and the electrode plate 110, the length in the axial direction is reduced.

[0030] One end of the electromotive actuator 140 is fixed to the surface 121 of the electrode support 120 .

[0031] 2, in a state where no voltage or current is applied from the power source 30 to the electrode support 120 and the electrode plate 110, the other end of the energized actuator 140 is in contact with a surface 161 of the annular member 160. As a result, the electrode support 120 and the annular member 160 are electrically connected via the energized actuator 140. That is, the potentials of the electrode support 120 and the electrode plate 110 are in a GND state. In other words, the electrode support 120 and the annular member 160 are at the same potential.

[0032] On the other hand, as shown in FIG. 3, when a temperature change is caused by applying a voltage or current from the power source 30 to the electrode support 120 and the electrode plate 110, the axial length of the energized actuator 140 is reduced, and the other end of the energized actuator 140 is separated from the surface 161 of the annular member 160. As a result, the electrical continuity between the electrode support 120 and the annular member 160 is released. That is, the potentials of the electrode support 120 and the electrode plate 110 are in a floating state. In other words, the electrode support 120 and the annular member 160 have different electrical potentials. Note that, when a voltage or current is applied from the power source 30 to the upper electrode support 120 and the electrode plate 110, the current flowing from the electrode support 120 to the annular member 160 via the energized actuator 140 causes the energized actuator 140 to generate heat (change in temperature), the axial length of the energized actuator 140 is reduced, and the electrical continuity between the electrode support 120 and the annular member 160 is released. Furthermore, plasma is generated in the plasma processing space 10s between the upper electrode (electrode support 120 and electrode plate 110) and the lower electrode (substrate support 11), and the heat of the plasma heats the energized actuator 140 (changes its temperature), maintaining the state in which electrical continuity between the electrode support 120 and the annular member 160 is released.

[0033] Thus, according to the upper electrode according to the first embodiment, the electrode support 120 and the electrode plate 110 can be switched between a GND state and a Float state by applying a voltage or current (second DC signal) from the power source 30 to the electrode support 120 and the electrode plate 110. In other words, it is possible to switch between electrical continuity and non-conduction between the electrode support 120 and the annular member 160. That is, the power source 30 constitutes a control mechanism that switches electrical continuity and non-conduction between the electrode support 120 and the annular member 160 by applying a temperature change to the energized actuator 140.

[0034] Furthermore, since the application of a voltage or current from a direct current power supply (power supply 30, DC power supply 32, second DC generating unit 32b) provided in the plasma processing apparatus 1 can switch between electrical continuity and non-conduction between the electrode support 120 and the annular member 160, there is no need to provide a separate power supply for switching electrical continuity and non-conduction in the energized actuator 140. Furthermore, since the energized actuator 140 does not require mechanical drive for switching electrical continuity and non-conduction, it can be made quiet and simple in structure. However, a separate power supply (control mechanism) for causing a temperature change to the energized actuator 140 may be provided.

[0035] It should be noted that the energization actuator 140 has been described as switching the electrical continuity between the electrode support 120 and the annular member 160, but is not limited to this.

[0036] Next, another example of the upper electrode (shower head 13) of the plasma processing apparatus 1 will be further described with reference to Fig. 4 and Fig. 5. Fig. 4 shows an example of the upper electrode of the second embodiment when no DC voltage is applied. Fig. 5 shows an example of the upper electrode of the second embodiment when DC voltage is applied.

[0037] The plasma processing apparatus 1 includes an electrode plate 110, an electrode support (first conductive member) 120, a contactor 130, an energized actuator (third member) 140A, an insulator 150 (not shown in FIGS. 4 and 5), an annular member 160 (not shown in FIGS. 4 and 5), and an upper cover member (second conductive member) 170. The electrode plate 110 and the electrode support 120 form an upper electrode.

[0038] The electrode support 120 has a surface (first surface) 121A facing the upper cover member (second conductive member) 170. In addition, the upper cover member 170 has a surface (second surface) 171A facing the surface 121A of the electrode support 120.

[0039] The actuator 140A is a member made of a shape memory alloy (SMA) whose shape changes when a temperature change is applied. The actuator 140A is an axially shaped member made of, for example, a Ni-Ti alloy, and when a temperature change is applied to the actuator 140A by applying a voltage or current to the electrode support 120 and the electrode plate 110, the length in the axial direction is reduced.

[0040] One end of the energized actuator 140A is fixed to the surface 121 of the electrode support 120. The other end of the energized actuator 140A is connected to a contact member 141A. The contact member 141A is made of a conductive material, such as aluminum.

[0041] 4, in a state where no voltage or current is applied from the power source 30 to the electrode support 120 and the electrode plate 110, the contact member 141A provided at the other end of the energized actuator 140A is in contact with the surface 171A of the upper cover member 170. As a result, the electrode support 120 and the upper cover member 170 are electrically connected via the energized actuator 140A and the contact member 141A. That is, the potentials of the electrode support 120 and the electrode plate 110 are in a GND state. In other words, the electrode support 120 and the upper cover member 170 are at the same potential.

[0042] On the other hand, as shown in Fig. 5, when a temperature change is caused by applying a voltage or current from the power source 30 to the electrode support 120 and the electrode plate 110, the axial length of the energized actuator 140A is reduced, and the abutment member 141A provided at the other end of the energized actuator 140A moves away from the surface 171A of the upper cover member 170. This causes the conduction between the electrode support 120 and the upper cover member 170 to be released. That is, the electric potentials of the electrode support 120 and the electrode plate 110 are in a floating state. In other words, the electrode support 120 and the upper cover member 170 have different electric potentials.

[0043] Next, still another example of the upper electrode (shower head 13) of the plasma processing apparatus 1 will be further described with reference to Fig. 6. Fig. 6 shows an example of the upper electrode of the third embodiment when no DC voltage is applied.

[0044] The plasma processing apparatus 1 includes an electrode plate 110, an electrode support 120, a contactor (first conductive member) 130B, an energized actuator (third member) 140B, an insulator 150 (not shown in FIG. 6), an annular member 160 (not shown in FIG. 6), and an upper cover member (second conductive member) 170. The electrode plate 110 and the electrode support 120 form an upper electrode.

[0045] Contactor 130B has a surface (first surface) 131B facing upper cover member (second conductive member) 170. In addition, upper cover member 170 has a surface (second surface) 171B facing surface 131B of contactor 130B.

[0046] The actuator 140B is a member made of a shape memory alloy (SMA) whose shape changes when a temperature change is applied. The actuator 140B is a cylindrical member made of, for example, a Ni-Ti alloy, and when a temperature change is applied to the actuator 140B by applying a voltage or current to the electrode support 120 and the electrode plate 110, the length in the axial direction is reduced. The contactor 130B has a cylindrical portion into which the power feed rod 131 is inserted, and a flange portion that is larger in diameter than the cylindrical portion and connects to the electrode support 120. The cylindrical actuator 140B is housed in the cylindrical portion of the contactor 130B.

[0047] One end of the energization actuator 140B is fixed to a surface 131B of the contactor 130B. Also, a surface 171B of the upper cover member 170 is provided with a conductive gasket 141B.

[0048] 6, in a state where no voltage or current is applied from the power source 30 to the electrode support 120 and the electrode plate 110, the other end of the energized actuator 140B contacts the surface 171B of the upper cover member 170 via the conductive gasket 141B. As a result, the electrode support 120 and the upper cover member 170 are electrically connected via the energized actuator 140B and the conductive gasket 141B. That is, the potentials of the electrode support 120 and the electrode plate 110 are in a GND state. In other words, the electrode support 120 and the upper cover member 170 are at the same potential.

[0049] On the other hand, when a temperature change is caused by applying a voltage or current from the power source 30 to the electrode support 120 and the electrode plate 110, the axial length of the energized actuator 140B is reduced, and the other end of the energized actuator 140B moves away from the conductive gasket 141B (surface 171B of the upper cover member 170). This causes the conduction between the electrode support 120 and the upper cover member 170 to be released. That is, the electric potentials of the electrode support 120 and the electrode plate 110 are in a floating state. In other words, the electrode support 120 and the upper cover member 170 have different electric potentials.

[0050] In this way, according to the upper electrode according to the second embodiment (see FIGS. 4 and 5) and the upper electrode according to the third embodiment (see FIG. 6), the electrode support 120 and the electrode plate 110 can be switched between a GND state and a Float state by applying a voltage or current (second DC signal) from the power source 30 to the electrode support 120 and the electrode plate 110. In other words, the electrode support 120 and the upper cover member 170 can be switched between conductive and non-conductive. That is, the power source 30 constitutes a control mechanism that switches between conductive and non-conductive states between the electrode support 120 and the upper cover member 170 by applying a temperature change to the current-carrying actuators 140A and 140B.

[0051] In addition, since the electrode support 120 and the upper cover member 170 can be switched between conductive and non-conductive by applying a voltage or current from a direct current power supply (power supply 30, DC power supply 32, second DC generating unit 32b) provided in the plasma processing apparatus 1, there is no need to prepare a separate power supply for switching between conductive and non-conductive states in the energized actuator 140. In addition, since the energized actuator 140 does not require mechanical drive for switching between conductive and non-conductive states, it can be made quiet and simple in structure. However, a separate power supply (control mechanism) for applying a temperature change to the energized actuators 140A and 140B may be provided.

[0052] The above describes embodiments of the plasma processing system, but the present disclosure is not limited to the above embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure described in the claims.

[0053] The second conductive member (annular member 160, upper cover member 170) has been described as being grounded, but this is not limited thereto, and may be at a reference potential.

[0054] Although the actuators 140, 140A, and 140B have been described as being made of shape memory alloy members, this is not limiting, and the actuators 140, 140A, and 140B may be made of piezoelectric members, bimetal members, or the like.

[0055] The energizing actuator 140 has been described as switching between electrical continuity and non-conduction between the electrode support 120 to which a voltage or current is applied from the power source 30 and the grounded members (the annular member 160 and the upper cover member 170), but is not limited thereto. For example, the plasma processing apparatus 1 has a baffle plate 14 provided between the side wall 10a and the substrate support 11, and for adjusting the gas flow from the plasma processing space 10s to the gas exhaust port 10e. In addition, a voltage or current is applied to the baffle plate from a power source (not shown). The energizing actuator may be provided to switch between electrical continuity and non-conduction between the baffle plate and the side wall 10a. This allows the amount of plasma confinement to be controlled, and the etching characteristics to be adjusted. [Explanation of symbols]

[0056] 1. Plasma processing equipment 10 Plasma processing chamber (processing vessel) 10a Side wall (exterior wall member) 30 Power supply (control mechanism) 110 Electrode Plate 120 holding plate (first conductive member) 130, 130B Contactor (first conductive member) 140, 140A, 140B: Electric actuator (third member) 150 Insulator 160 Annular member (second conductive member) 170 Upper cover member (second conductive member) 121, 121A, 131B faces (first faces) 161, 171A, 171B faces (second faces)

Claims

1. A processing vessel; a first conductive member disposed in the processing chamber; a second conductive member having a second surface opposing the first surface of the first conductive member; a third member that is disposed on at least one of the first conductive member and the second conductive member and whose shape changes in response to a temperature change; a control mechanism for applying the temperature change to the third member, A change in shape of the third member switches between electrical continuity and non-conduction between the first conductive member and the second conductive member. Plasma processing equipment.

2. A processing vessel; a first conductive member disposed in the processing chamber; a second conductive member having a second surface opposing the first surface of the first conductive member; a third member that is disposed on at least one of the first conductive member and the second conductive member and whose shape changes in response to a temperature change; a power source that applies a voltage or a current to the third member to cause the temperature change; a voltage or a current is applied from the power source to one of the first conductive member and the second conductive member, and the other conductive member is at a reference potential; Plasma processing equipment.

3. The control mechanism is a power source, and the temperature change is caused by applying a voltage or a current from the power source. The plasma processing apparatus according to claim 1 .

4. a voltage or a current is applied from the power source to one of the first conductive member and the second conductive member, and the other conductive member is at a reference potential; The plasma processing apparatus according to claim 3 .

5. The voltage or the current is a direct current.

5. The plasma processing apparatus according to claim 2, wherein the first and second electrodes are arranged on the first and second surfaces.

6. The third member includes at least one of a shape memory alloy member, a piezoelectric member, and a bimetal member. The plasma processing apparatus according to any one of claims 1 to 5.

7. the first conductive member is an upper electrode, and the second conductive member is a member electrically connected to an outer wall member of the processing vessel; 7. The plasma processing apparatus according to claim 1, wherein the first and second electrodes are disposed on the first and second surfaces of the substrate.

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