Organoaminosilane precursors and methods for depositing films containing same - Patents.com

Abstract

To provide silane precursors effective for low-temperature atomic layer deposition or plasma enhanced atomic layer deposition of a silicon oxide film or carbon-doped silicon oxide film.SOLUTION: The invention provides organoaminosilane precursors such as 1-dimethylamino-1,3-disilapropane, diisopropylamino-1,3-disilapropane, 1-di-secbutylamino-1,3-disilane propane, 1-diisobutylamino-1,3-disilapropane, 1-di-tertpentylamino-1,3-disilapropane, 1-diethylamino-1,3-disilapropane, 1-dimethylamino-1,4-disilabutane, 1-diethylamino-1,4-disilabutane, 1-diisopropylamino-1,4-disilabutane, 1,3-bis(dimethylamino)-1,3-disilapropane, 1,3-bis(diisopropylamino)-1,3-disilapropane, and 1,3-bis(di-sec-butylamino)-1,3-disilapropane.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This patent application claims priority to U.S. Provisional Patent Application No. 61 / 880,261, filed September 20, 2013, the disclosure of which is incorporated herein by reference in its entirety. [Background technology]

[0002] Described herein are precursors, particularly organoaminosilanes and their compositions, that can be used for depositing silicon-containing films, including but not limited to amorphous silicon films, crystalline silicon films, silicon nitride films, silicon oxide films, carbon-doped silicon oxide films, silicon carbonitride films, and silicon oxynitride films.In yet another aspect, described herein are precursors for depositing silicon-containing films in the manufacture of integrated circuit devices.In these or other aspects, organoaminosilane precursors can be used for various deposition processes, including but not limited to atomic layer deposition ("ALD"), chemical vapor deposition ("CVD"), plasma enhanced chemical vapor deposition ("PECVD"), low pressure chemical vapor deposition ("LPCVD"), and atmospheric pressure chemical vapor deposition.

[0003] Several classes of compounds can be used as precursors for silicon-containing films, such as, but not limited to, silicon oxide films, carbon-doped silicon oxide films, or silicon nitride films. Examples of these compounds suitable for use as precursors include silanes, chlorosilanes, polysilazanes, aminosilanes, and azidosilanes. Inert carrier gases or diluents, such as, but not limited to, helium, hydrogen, nitrogen, etc., are also used to deliver the precursors to the reaction chamber.

[0004] Low pressure chemical vapor deposition (LPCVD) process is one of the most widely accepted methods used in the semiconductor industry for the deposition of silicon-containing films. Low pressure chemical vapor deposition (LPCVD) using ammonia can require deposition temperatures above 750°C to obtain good growth rates and uniformity. Higher deposition temperatures are typically used to provide improved film properties. One of the more common industry methods for growing silicon nitride films or other silicon-containing films is via low pressure chemical vapor deposition using the precursors silane, dichlorosilane, and / or ammonia in a hot wall reactor at temperatures above 750°C. However, there are some drawbacks to using this method. For example, some precursors such as silane are pyrophoric. This creates handling and use issues. Also, films deposited from silane and dichlorosilane can contain some impurities. For example, films deposited using dichlorosilane can contain impurities such as chlorine and ammonium chloride, which are formed as by-products during the deposition process. Films deposited using silane can contain hydrogen.

[0005] Precursors used to deposit silicon nitride films, such as BTBAS and chlorosilanes, generally deposit films at temperatures above 550°C. The trend toward miniaturization and low thermal budgets in semiconductor devices requires lower process temperatures and faster deposition rates. In particular, for substrates containing metallization layers and III-V and II-VI devices, the temperature at which silicon films are deposited must be reduced to prevent ion diffusion in the lattice. Thus, there is a need in the art to provide precursors for the deposition of silicon-containing films, such as silicon oxide films, carbon-doped silicon oxide films, silicon oxynitride films, or silicon nitride films, that are chemically reactive enough to allow deposition via CVD, ALD, or other processes at temperatures below 550°C or even at room temperature.

[0006] US 2013 / 224964 describes a method for forming a dielectric film having Si-C bonds on a semiconductor substrate by atomic layer deposition (ALD), comprising the steps of (i) adsorbing a precursor on a surface of the substrate, (ii) reacting the adsorbed precursor with a reactant gas at the surface, and (iii) repeating steps (i) and (ii) to form a dielectric film having at least Si-C bonds on the substrate, where the precursor has Si-C-Si bonds in its molecule and the reactant gas is oxygen-free, halogen-free, and composed of at least a noble gas.

[0007] The specification of Japanese Patent Application Laid-Open No. 2002-158223 discloses a compound of the formula {R 3 (R 4 )N}3Si-{C(R 1 )R 2} n -Si{N(R 5 )R 6}3[where R 1 , R 2 =H, a hydrocarbon group, or an X (halogen atom)-substituted hydrocarbon group (R 1 and R 2 may be the same), n=an integer of 1 to 5, R 3 , R 4 , R 5 and R 6 =H, a hydrocarbon group or an X(halogen atom)-substituted hydrocarbon group (R 3 , R 4 , R 5 and R 6 The present invention describes an insulating film formed using a Si-type material having a thickness of 100 nm to 150 nm, the thickness of which may be the same as that of the Si-type material. The insulating film may be formed on a substrate by CVD.

[0008] US Pat. No. 7,125,582 describes a method and system that involves combining a Si source precursor and a nitrogen (N) source precursor at a temperature of up to 550° C. and forming a silicon nitride film.

[0009] Mitzel, NW et al., entitled "Synthesis of Volatile Cyclic Silylamines and the Molecular Structures of Two 1-Aza-2,5-disilacyclopentane Derivatives," Inorg. Chem., Vol 36(20) (1997), pp. 4360-4368, describes a synthesis for producing α,ω-bis(bromosilyl)alkanes, BrH2Si(CH2)nSiH2Br (n=2 and 3). In this article, 1,2-bis(bromosilyl)ethane reacts with ammonia to give 1,4-bis(1-aza-2,5-disilacyclopentan-1-yl)-1,4-disilabutane, traces of 1,6-diaza-2,5,7,10,11,14-hexasilabicyclo[4.4.4]tetradecane, and non-volatile products.

[0010] An article entitled “Differences in reactivity of 1,4-disilabutane and n-tetrasilane towards secondary amines” Z. Naturforsch., B: Chem. Sci. FIELD Full Journal Title: Zeitschrift fur Naturforschung, B: Chemical Sciences 45(12): 1679-83 described a synthesis for producing aminosilanes using 1,4-disilabutane H3SiCH2CH2SiH3(I) and n-tetrasilane H3SiSiH2SiH2SiH3. Summary of the Invention [Means for solving the problem]

[0011] Described herein are organoaminosilane precursors, compositions comprising the same, and methods of using the same for forming a film comprising silicon, including but not limited to amorphous silicon, crystalline silicon, silicon oxide, carbon-doped silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon carbonitride, and combinations thereof, on at least a portion of a substrate. In a specific embodiment, the organoaminosilane precursor is effective for low temperature (e.g., 350° C. or less) atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of silicon oxide or carbon-doped silicon oxide films. Further described herein are compositions comprising organoaminosilanes that are substantially free of at least one selected from amines, halides (e.g., Cl, F, I, Br), high molecular weight molecular species, and trace metals. In these or other embodiments, the composition may further comprise a solvent. Also described herein are methods for forming a film or coating comprising silicon on an object to be processed, such as, for example, a semiconductor wafer. In one embodiment of the method described herein, a film comprising silicon and oxygen is deposited on a substrate using an organoaminosilane precursor and an oxygen-containing source in a deposition chamber under conditions for producing a silicon oxide film, a carbon-doped silicon oxide film, on the substrate.In another embodiment of the method described herein, a film comprising silicon and nitrogen is deposited on a substrate using an organoaminosilane precursor and a nitrogen-containing precursor in a deposition chamber under conditions for producing a silicon nitride film on the substrate.In a further embodiment, the organoaminosilane precursor described herein can also be used as a dopant for metal-containing films, such as, but not limited to, metal oxide films or metal nitride films.In the compositions and methods described herein, an organoaminosilane having the formula described herein is used as at least one silicon-containing precursor.

[0012] In one aspect, the organoaminosilane precursors described herein have the following formulae A-E: [ka] (In the formula, R 1 is a straight or branched C1-C10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl groups, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, and optionally R in formula D is selected from the group consisting of 3 forms a ring selected from a 4-membered ring, a 5-membered ring or a 6-membered ring together with the two silicon atoms and at least one nitrogen atom, and p and q in formula E are equal to 1 or 2.

[0013] In another embodiment, (a) a compound represented by the following formulae A to E: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forms a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom.) and (b) a solvent. In some embodiments of the compositions described herein, examples of the solvent can include, but are not limited to, ethers, tertiary amines, alkyl hydrocarbons, aromatic hydrocarbons, tertiary amino ethers, and combinations thereof. In some embodiments, the difference between the boiling point of the organoaminosilane and the boiling point of the solvent is 40° C. or less.

[0014] In another aspect, there is provided a method of forming a silicon-containing film on at least one surface of a substrate, the method comprising: providing said at least one surface of said substrate in a reaction chamber; By a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the following formulas A to E are obtained: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 and forming a silicon-containing film on at least one surface using at least one organoaminosilane precursor comprising a compound represented by one of the following formulas: R 1 and R 2 In another embodiment, R 1 and R 2 are different. In the above or other embodiments, R1 and R2 can be joined together to form a ring. In further embodiments, R1 and R2 are not joined to form a ring.

[0015] In another aspect, a method of forming a silicon oxide film, a carbon doped silicon oxide film, via an atomic layer deposition process or an ALD-like process, the method comprising: a. providing a substrate in a reactor; b. adding to a reactor the following formulas A to E: [ka] (R in the formula 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; c. purging the reactor with a purge gas; d. introducing an oxygen-containing source into the reactor; e. purging the reactor with a purge gas; and steps b through e are repeated until a desired thickness of the film is obtained.

[0016] In a further aspect, there is provided a method of forming a film selected from a silicon oxide film and a carbon-doped silicon oxide film on at least one surface of a substrate using a CVD process, the method comprising: a. providing a substrate in a reactor; b. adding to a reactor the following formulas A to E: [ka] (R in the formula 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; c. providing an oxygen-containing source to deposit a film on at least one surface; In some embodiments, a method is provided comprising: 1 and R 2 In another embodiment, R 1 and R 2 In the above or other embodiments, R 1 and R 2 can be joined together to form a ring. In a further embodiment, R 1 and R 2 do not bond to form a ring.

[0017] In another aspect, a method of forming a silicon nitride or silicon carbonitride film via an atomic layer deposition process, the method comprising: a. providing a substrate in a reactor; b. adding to a reactor the following formulas A to E: [ka] (R in the formula 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; c. purging the reactor with a purge gas; d. introducing a nitrogen-containing source into the reactor; e. purging the reactor with a purge gas; and steps b through e are repeated until a desired thickness of the film is obtained. 1 and R 2 In another embodiment, R 1 and R 2 In the above or other embodiments, R 1 and R 2 can be joined together to form a ring. In a further embodiment, R 1 and R 2 do not bond to form a ring.

[0018] In a further aspect, there is provided a method of forming a silicon nitride or silicon carbonitride film on at least a surface of a substrate using a CVD process, the method comprising: a. providing a substrate in a reactor; b. adding to a reactor the following formulas A to E: [ka] (R in the formula 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; c. providing a nitrogen-containing source; wherein at least one organoaminosilane precursor and a nitrogen-containing source are reacted to deposit a film on at least one surface. 1 and R2 In another embodiment, R 1 and R 2 In the above or other embodiments, R 1 and R 2 can be joined together to form a ring. In a further embodiment, R 1 and R 2 do not bond to form a ring.

[0019] In a further embodiment of the methods described herein, the process deposits an amorphous silicon film or a crystalline silicon film. In this embodiment, the method comprises: placing one or more substrates in a reactor that is heated to one or more temperatures ranging from ambient temperature to about 700° C.; Formulas A to E below: [ka] (R in the formula 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; and providing a source of reducing agent in the reactor to at least partially react with at least one organoaminosilane precursor and deposit a silicon-containing film on one or more substrates. The reducing agent is selected from the group consisting of hydrogen, hydrogen plasma, and hydrogen chloride. In some embodiments of the CVD method, the reactor is maintained at a pressure ranging from 10 mTorr to 760 Torr during the introducing step. The above steps define one cycle of the method described herein, and the cycle of steps can be repeated until a desired thickness of the film is obtained. In some embodiments, R 1 and R 2 In another embodiment, R 1 and R 2 In the above or other embodiments, R 1 and R 2 can be joined together to form a ring. In a further embodiment, R 1 and R 2 do not bond to form a ring.

[0020] In another aspect, a method for depositing an amorphous or crystalline silicon film via an atomic layer deposition or cyclic chemical vapor deposition process, the method comprising: a. providing a substrate in a reactor; b. Formulas A-E below: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; Each step of the process is included. The method includes repeating step b above until a desired film thickness is obtained. In some embodiments, the film thickness can be 1 Å or more, or 1-10,000 Å, or 1-1000 Å, or 1-100 Å.

[0021] In another aspect, described herein is a vessel for depositing silicon-containing films comprising one or more organoaminosilane precursors having any one of the formulas A, B, C, or D or E, combinations thereof, or comprising one or more precursors represented by formulas A, B, C, D or E. In one particular embodiment, the vessel comprises at least one pressurizable vessel (preferably made of stainless steel) with appropriate valves and fittings to enable delivery of one or more precursors to a reactor for a CVD or ALD process.

[0022] In yet another embodiment, Formulas A to E below: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with the two silicon atoms and at least one nitrogen atom, The above method: R 1 R 2 NH and R 1 NH2 (wherein R in the amine 1 Straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R in the amine 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 an amine having a formula selected from [ka] (Wherein, R in the silicon source 3 and R 4 are independently linear or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 a silicon source comprising at least one compound selected from the group consisting of a heteroarylene group, reacting at least a portion of the silicon source with at least a portion of the amine in the presence of a catalyst under reaction conditions sufficient to provide the organoaminosilane. [Brief description of the drawings]

[0023] [Figure 1] FIG. 1 shows the relative deposition rate of the organoaminosilane described herein, 1-di-iso-propylamino-1,4-disilabutane, compared to the deposition rates of other organoaminosilanes provided in the literature, such as bis(diethylamino)silane (BDEAS), bis(tert-butylamino)silane (BTBAS), bis(ethylmethylamino)silane (BEMAS), tris(dimethylamino)silane (TRDMAS), and di-sec-butylaminosilane (DSBAS). DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0024] The organoaminosilanes described herein are used as precursors to form stoichiometric and non-stoichiometric silicon-containing films, such as, but not limited to, amorphous silicon, silicon-rich carbonitride, crystalline silicon, silicon oxide, silicon oxycarbide, silicon nitride, silicon oxynitride, and silicon oxycarbonitride. These precursors can also be used as dopants, for example, for metal-containing films. The organoaminosilane precursors used in semiconductor processes are typically high-purity, volatile liquid precursor chemicals that are vaporized and delivered as gases to a deposition chamber or reactor to deposit silicon-containing films via CVD or ALD processes for semiconductor devices. The selection of precursor materials for deposition depends on the resulting silicon-containing material or film desired. For example, the precursor material can be selected for its chemical element content, stoichiometric ratio of chemical elements, and / or the resulting silicon-containing film or coating formed by CVD. The precursor material may also be selected for various other properties, such as cost, relatively low toxicity, handling properties, ability to maintain a liquid phase at room temperature, volatility, molecular weight, and / or other considerations. In some embodiments, the precursors described herein can be delivered to the reaction system by a number of means, preferably using a pressurizable stainless steel vessel equipped with appropriate valves and fittings to allow delivery of liquid phase precursors to the deposition chamber or reactor.

[0025] The organoaminosilane precursors described herein exhibit a balance of reactivity and stability that makes them ideally suited as CVD or ALD precursors in microelectronic device manufacturing processes. With respect to reactivity, some precursors may have boiling points that are too high to be evaporated and delivered to a reactor and deposited as a film on a substrate. For precursors with high relative boiling points, the delivery vessels and lines must be heated to or above the boiling point of the precursor under some vacuum to prevent condensation or particle formation in the vessel, line, or both. With respect to stability, other precursors may produce silane (SiH4) or disilane (Si2H6) as they decompose. Silane is pyrophoric, i.e., it burns spontaneously, at room temperature, which creates safety and handling issues. Additionally, the production of silane or disilane and other by-products reduces the purity level of the precursor, and even a change as small as 1-2% in chemical purity may be considered unacceptable for reliable semiconductor manufacturing. In some embodiments, the organoaminosilane precursors having formulas A-E described herein contain 2 wt% or less, or 1 wt% or less, or 0.5 wt% or less by-products after storage for 6 months or more or 1 year or more (which indicates shelf life). In addition to the above advantages, in some embodiments, such as for depositing silicon oxide or silicon nitride or silicon films using ALD, ALD-like, PEALD, or CCVD deposition methods, the organoaminosilane precursors described herein can deposit dense materials at relatively low deposition temperatures, for example, 500° C. or less, or 400° C. or less, 300° C. or less, 200° C. or less, 100° C. or less, or 50° C. or less. In some specific embodiments, the organoaminosilane precursors can be used to deposit silicon-containing films via ALD or PEALD at temperatures as low as 50° C. or less, or at ambient or room temperature (e.g., 25° C.).

[0026] In an embodiment, described herein is a composition for forming a silicon-containing film comprising an organoaminosilane having any one of formulas A-E described herein and a solvent. Without intending to be bound by theory, it is believed that the compositions described herein can provide one or more advantages compared to pure organoaminosilane. These advantages include better utilization of the organoaminosilane in semiconductor processes, better stability in long-term storage, cleaner evaporation by flash evaporation, and / or an overall more stable direct liquid injection (DLI) chemical vapor deposition process. The weight percentage of the organoaminosilane in the composition can range from 1-99%, with the remainder being a solvent, where the solvent does not react with the organoaminosilane and has a similar boiling point as the organoaminosilane. With respect to the latter, the difference in boiling point between the organoaminosilane and the solvent in the composition is 40° C. or less, more preferably 20° C. or less, or 10° C. or less. Examples of solvents include, but are not limited to, hexane, octane, toluene, ethylcyclohexane, decane, dodecane, bis(2-dimethylaminoethyl) ether.

[0027] In one embodiment, the compound represented by the following formulae A to E: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forms a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with the two silicon atoms and at least one nitrogen atom.

[0028] In the formula and throughout the specification, the term "alkyl" refers to a straight or branched chain functional group having 1 to 10 or 1 to 6 carbon atoms. Examples of alkyl groups include, but are not limited to, methyl (Me), ethyl (Et), propyl (Pr), propyl (Pb ... n ), isopropyl (Pr i ), Butyl (Bu n ), isobutyl (Bu i ), sec-Butyl (Bu s ), tert-Butyl (Bu t ), pentyl, isopentyl, tert-pentyl (Am t ), hexyl, isohexyl, and neohexyl. In some embodiments, the alkyl group may have one or more functional groups attached thereto, such as, but not limited to, an alkoxy group, a dialkylamino group, or a combination thereof. In other embodiments, the alkyl group does not have one or more functional groups attached thereto. A compound having the formula A, R 1 and R 2 (if present) an alkyl group as R 3 Examples of organic aminosilanes having an alkylene group such as methylene -CH- or ethylene -CHCH- include, but are not limited to, [Table 1] Includes.

[0029] In the formula and throughout the specification, the term "cyclic alkyl" refers to a cyclic functional group having 3 to 10 or 4 to 10 carbon atoms or 5 to 10 carbon atoms. Examples of cyclic alkyl groups include, but are not limited to, cyclobutyl, cyclopentyl, cyclohexyl, and cyclooctyl groups. A compound having the formula A, R 1 and R 2 (if present) a cyclic alkyl group; and R 3 Examples of organic aminosilanes having an alkylene group such as methylene -CH- or ethylene -CHCH- include, but are not limited to, [Table 2] Includes.

[0030] In the formula and throughout the specification, the term "aryl" refers to an aromatic cyclic functional group having 5 to 12 carbon atoms or 6 to 10 carbon atoms. Examples of aryl include, but are not limited to, phenyl (Ph), benzyl, chlorobenzyl, tolyl, and o-xylyl. A compound having the formula A, R 1 and R 2 (if present) an aryl group, and R 3 Examples of organic aminosilanes having an alkylene group such as methylene -CH- or ethylene -CHCH- include, but are not limited to, [Table 3] Includes.

[0031] In some embodiments, one or more of the alkyl, alkenyl, alkynyl, and / or aryl groups in formulas A-E can be substituted or have one or more atoms or groups of atoms substituted, e.g., in place of a hydrogen atom. Examples of substituents include, but are not limited to, oxygen, sulfur, halogen atoms (e.g., F, Cl, I, or Br), nitrogen, and phosphorus. In other embodiments, one or more of the alkyl, alkenyl, alkynyl, and / or aryl groups in formulas A-E can be unsubstituted.

[0032] In the formula and throughout the description, cyclic alkyl is a substituted or heterocyclic alkyl group. The term "heterocyclic alkyl" refers to a cyclic functional group having 3 to 10 or 4 to 10 carbon atoms or 5 to 10 carbon atoms and at least one oxygen atom or nitrogen atom or both. A compound having the formula A, R 1 and R 2 (if present), R is a heterocyclic alkyl group; 3 Examples of organic aminosilanes having an alkylene group such as methylene -CH- are, but are not limited to, [Table 4] Includes.

[0033] In the formula and throughout the description, aryl is substituted or heteroaryl. The term "heteroaryl" refers to an aryl functional group having 3 to 10 or 4 to 10 carbon atoms or 5 to 10 carbon atoms and at least one oxygen atom or nitrogen atom or both. In the formula and throughout the description, the term "alkenyl group" refers to a group having one or more carbon-carbon double bonds and having 3 to 10 or 3 to 6 or 3 to 4 carbon atoms.

[0034] In the formula and throughout the specification, the term "alkynyl group" denotes a group having one or more carbon-carbon triple bonds and having 3 to 10, or 3 to 6, or 3 to 4 carbon atoms.

[0035] The term "alkylene" in the formula and throughout the specification refers to a hydrocarbon group having 1 to 10 or 4 to 10 carbon atoms or 5 to 10 carbon atoms and linked by two silicon atoms. Examples of alkylene groups include, but are not limited to, methylene (-CH2-), ethylene (-CH2CH2-), propylene (-CH2CH2CH2-), and isopropylene (-CH(Me)CH2-).

[0036] In the formula and throughout the specification, the term "arylene" refers to an aromatic cyclic functional group having 5 to 12 carbon atoms or 6 to 10 carbon atoms, preferably with two Si atoms bonded to the 1,2- or 1,4-positions of the arylene group.

[0037] In the formula and throughout the specification, the term "heteroarylene" refers to an aromatic cyclic functional group having 5 to 12 carbon atoms or 6 to 10 carbon atoms, preferably with two Si atoms bonded to the 1,2-positions of the heteroarylene group.

[0038] In some embodiments, R 3 can be linked to form a ring structure in formula D. Examples of organoaminosilanes include, but are not limited to, [Table 5] Includes.

[0039] In yet another embodiment, R 3 and R 4 are each methylene -CH2- or each ethylene -CH2CH2- in formula E. Examples of organoaminosilanes include, but are not limited to, [Table 6] Includes.

[0040] The method used to form silicon-containing film or coating is a deposition process. Examples of deposition processes suitable for the method disclosed herein include, but are not limited to, cyclic CVD (CCVD), MOCVD (metal organic CVD), thermal chemical vapor deposition, plasma enhanced chemical vapor deposition ("PECVD"), high density PECVD, photon assisted CVD, plasma-photon assisted ("PPECVD"), low temperature chemical vapor deposition, chemically assisted vapor deposition, hot filament chemical vapor deposition, CVD of liquid polymer precursors, deposition from supercritical fluids, and low energy CVD (LECVD). In some embodiments, metal-containing films are deposited by atomic layer deposition (ALD), plasma enhanced ALD (PEALD) or plasma enhanced cyclic CVD (PECCVD) process. As used herein, the term "chemical vapor deposition process" refers to any process in which a substrate is exposed to one or more volatile precursors that react and / or decompose on the substrate surface to produce a desired deposition. The term "atomic layer deposition process" as used herein refers to a self-limiting (e.g., the amount of film material deposited in each reaction cycle is constant) sequential surface chemistry that deposits a film of material on a substrate of varying composition. The precursors, reagents, and sources used herein may often be described as "gaseous", but it is understood that the precursors may be liquid or solid, which may be transported into the reactor with or without an inert gas via vaporization, bubbling, or sublimation. In some cases, the vaporized precursors may be passed through a plasma generator. In one embodiment, the silicon-containing film is deposited using an ALD process. In another embodiment, the silicon-containing film is deposited using a CCVD process. In a further embodiment, the silicon-containing film is deposited using a thermal CVD process. The term "reactor" as used herein includes, but is not limited to, a reaction chamber or a deposition chamber.

[0041] In some embodiments, the method disclosed herein avoids pre-reaction of precursors by using ALD or CCVD methods that separate precursors before and / or during introduction into the reactor.In this regard, deposition techniques such as ALD or CCVD processes are used to deposit silicon-containing films.In some embodiments, films are deposited via ALD processes by exposing the substrate surface alternately to silicon-containing precursors, oxygen-containing sources, nitrogen-containing sources, or other precursors or reagents.The growth of the film proceeds through self-limiting control of surface reactions, pulse length of each precursor or reagent, and deposition temperature.However, once the substrate surface is saturated, the growth of the film stops.

[0042] In some embodiments, the methods described herein further include one or more additional silicon-containing precursors other than the organoaminosilane precursors having formulas A-E above. Examples of additional silicon-containing precursors include, but are not limited to, monoaminosilanes (e.g., di-iso-propylaminosilane, di-sec-butylaminosilane, phenylmethylaminosilane), organosilicon compounds such as trisilylamine (TSA), siloxanes (e.g., hexamethyldisiloxane (HMDSO) and dimethylsiloxane (DMSO)), organosilanes (e.g., methylsilane, dimethylsilane, diethylsilane, vinyltrimethylsilane, trimethylsilane, tetramethylsilane, ethylsilane, disilylmethane, 2,4-disilapentane, 1,4-disilabutane, 2,5-disilahexane, 2,2-disilylpropane, 1,3,5-trisilacyclohexane and fluorinated derivatives of these compounds), phenyl-containing organosilicon compounds (e.g., dimethylphenylsilane and and diphenylmethylsilane), oxygen-containing organosilicon compounds, such as dimethyldimethoxysilane, 1,3,5,7-tetramethylcyclotetrasiloxane, 1,1,3,3-tetramethyldisiloxane, 1,3,5,7-tetrasila-4-oxo-heptane, 2,4,6,8-tetrasila-3,7-dioxo-nonane, 2,2-dimethyl-2,4,6,8-tetrasila-3,7-dioxo-nonane, Siloxanes include methylcyclotetrasiloxane, octamethylcyclotetrasiloxane, [1,3,5,7,9]-pentamethylcyclopentasiloxane, 1,3,5,7-tetrasila-2,6-dioxo-cyclooctane, hexamethylcyclotrisiloxane, 1,3-dimethyldisiloxane, 1,3,5,7,9-pentamethylcyclopentasiloxane, hexamethoxydisiloxane, and fluorinated derivatives of these compounds.

[0043] In some embodiments, depending on the deposition method, one or more silicon-containing precursors may be introduced into the reactor at a predetermined molar volume, or from about 0.1 to about 1000 micromoles. In this or other embodiments, the silicon-containing precursor and / or organoaminosilane precursor may be introduced into the reactor for a predetermined period of time. In some embodiments, this period of time ranges from about 0.001 to about 500 seconds.

[0044] In some embodiments, the silicon-containing film deposited using the methods described herein is formed in the presence of oxygen using an oxygen-containing source, reagent or precursor containing oxygen. The oxygen source gas may be introduced into the reactor in the form of at least one oxygen-containing source and / or may be present concomitantly in other precursors used in the deposition process. Suitable oxygen-containing source gases include, but are not limited to, water (H2O) (e.g., deionized water, purified water, and / or distilled water), oxygen (O2), oxygen plasma, ozone (O3), NO, NO2O, NO2, carbon monoxide (CO), carbon dioxide (CO2), carbon dioxide plasma, and combinations thereof. In some embodiments, the oxygen-containing source comprises an oxygen-containing source gas introduced into the reactor at a flow rate ranging from about 1 to about 2000 standard cubic centimeters (sccm) or from about 1 to about 1000 sccm. The oxygen-containing source may be introduced for a time ranging from about 0.1 to about 100 seconds. In one specific embodiment, the oxygen-containing source comprises water having a temperature of 10° C. or higher. In the embodiment where the film is deposited by ALD or cyclic CVD process, the precursor pulse can have a pulse duration of more than 0.01 seconds, and the oxygen-containing source can have a pulse duration of less than 0.01 seconds, while the water pulse duration can have a pulse duration of less than 0.01 seconds.In yet another embodiment, the purge duration between pulses can be as small as 0 seconds, and the pulses are continuously pulsed without any purge in between.The oxygen-containing source or reagent is provided in a molecular amount that is less than 1:1 ratio to the silicon precursor, so that at least some carbon is retained in the as-deposited silicon-containing film.

[0045] In some embodiments, the silicon-containing film comprises silicon and nitrogen. In these embodiments, the silicon-containing film deposited using the methods described herein is formed in the presence of a nitrogen-containing source. The nitrogen-containing source may be introduced into the reactor in the form of at least one nitrogen-containing source and / or may be present concomitantly in other precursors used in the deposition process. Suitable nitrogen-containing source gases may include, for example, ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen / hydrogen, ammonia plasma, nitrogen plasma, nitrogen / argon plasma, nitrogen / helium plasma, nitrogen / hydrogen plasma, and mixtures thereof. In some embodiments, the nitrogen-containing source comprises an ammonia plasma or a hydrogen / nitrogen plasma or a nitrogen / argon plasma or a nitrogen / helium plasma source gas introduced into the reactor at a flow rate ranging from about 1 to about 2000 standard cubic centimeters (sccm) or from about 1 to about 1000 sccm. The nitrogen-containing source may be introduced for a time ranging from about 0.01 to about 100 seconds. In embodiments where the film is deposited by an ALD or cyclic CVD process, the precursor pulses can have pulse durations greater than 0.01 seconds and the nitrogen-containing source can have pulse durations less than 0.01 seconds, while the water pulse duration can have a pulse duration less than 0.01 seconds. In yet another embodiment, the purge duration between pulses can be as little as 0 seconds, pulsed continuously with no purge in between.

[0046] The deposition methods disclosed herein may include one or more purge gases. Purge gases used to purge unconsumed reactants and / or reaction by-products are inert gases that do not react with the precursors. Examples of purge gases include, but are not limited to, argon (Ar), krypton (Kr), xenon (Xe), nitrogen (N2), helium (He), neon, hydrogen (H2), and mixtures thereof. In some embodiments, a purge gas, such as Ar, is supplied to the reactor at a flow rate ranging from about 10 to about 2000 sccm for a time period of about 0.1 to 1000 seconds, thereby purging unreacted materials and any by-products that may remain in the reactor.

[0047] Each step of supplying the precursor, oxygen-containing source, nitrogen-containing source, and / or other precursors, source gases, and / or reagents can be performed by varying the time for which they are supplied to change the stoichiometry of the resulting silicon-containing film.

[0048] Energy is applied to at least one of the precursor, nitrogen-containing source, reducing agent, other precursor, and / or combination thereof to induce reaction and form silicon-containing film or coating on the substrate.Such energy can be provided by, but is not limited to, heat, plasma, pulsed plasma, helicon plasma, high-density plasma, inductively coupled plasma, X-ray, electron beam, photon, remote plasma method, and combinations thereof.In some embodiments, a secondary RF frequency source can be used to modify the plasma characteristics at the substrate surface.In embodiments where deposition involves plasma, the plasma generation process can include a direct plasma generation process in which the plasma is generated directly in the reactor, or alternatively, a remote plasma generation process in which the plasma is generated outside the plasma reactor and fed into the reactor.

[0049] The organoaminosilane precursors and / or other silicon-containing precursors can be delivered to a reaction chamber, such as a CVD or ALD reactor, in a variety of ways. In some embodiments, a liquid delivery system can be utilized. In alternative embodiments, a combined liquid delivery unit and flash vaporization process unit, such as a turbo vaporizer from MSP Corporation of Shoreview, MN, can be used, allowing for the delivery of low volatility materials in precise volumes, which leads to reproducible transport and deposition without precursor thermal decomposition. In liquid delivery formulations, the precursors described herein can be delivered in pure liquid form or can be used in a solvent formulation or composition containing the same. That is, in some embodiments, the precursor formulation can include a solvent component with appropriate characteristics that are desirable and advantageous in a particular end-use application for forming a film on a substrate.

[0050] In embodiments where the precursor having formula A-E is used in a composition comprising a solvent and formula A-E described herein, the solvent or mixture thereof selected does not react with the organoaminosilane. The amount of solvent in the composition ranges from 0.5 wt% to 99.5 wt%, or ranges from 10 wt% to 75 wt%. In this or other embodiments, the solvent has a boiling point similar to the boiling point (bp) of the organoaminosilane of formula A-E, or the difference between the boiling point of the solvent and the boiling point of the organoaminosilane of formula A-E is 40°C or less, 30°C or less, or 20°C or less, or 10°C. Alternatively, the difference between the boiling points ranges from any one or more of the following endpoints: 0, 10, 20, 30, or 40°C. Examples of suitable ranges of boiling point difference include, but are not limited to, 0°C to 40°C, 20°C to 30°C, or 10°C to 30°C. Examples of suitable solvents in the composition include, but are not limited to, ethers (e.g., 1,4-dioxane, dibutyl ether), tertiary amines (e.g., pyridine, 1-methylpiperidine, 1-ethylpiperidine, N,N'-dimethylpiperazine, N,N,N',N'-tetramethylethylenediamine), nitriles (e.g., benzonitrile), alkyl hydrocarbons (e.g., octane, nonane, dodecane, ethylcyclohexane), aromatic hydrocarbons (e.g., toluene, mesitylene), tertiary amino ethers (e.g., bis(2-dimethylaminoethyl) ether), or mixtures thereof.

[0051] In another embodiment, a container for depositing silicon-containing films comprising one or more organoaminosilane precursors having formulae A-E is described herein. In a specific embodiment, the container comprises at least one pressurizable container (preferably made of stainless steel) with appropriate valves and fittings to allow delivery of one or more precursors to a reactor for CVD or ALD processes. In this or other embodiments, the organoaminosilane precursors having formulae A-E are provided in a stainless steel pressurizable container, and the purity of the precursors is 98 wt% or more or 99.5 wt% or more, which is suitable for most semiconductor applications. In some embodiments, such containers can also have a means for mixing the precursors with one or more additional precursors, if desired. In these or other embodiments, the contents of the container can be premixed with the additional precursors. Alternatively, the organoaminosilane precursors and / or other precursors can be maintained in separate containers or a single container with a separation means for keeping the organoaminosilane precursors and other precursors separate during storage.

[0052] In yet another aspect, there is provided a method for preparing an organoaminosilane, such as those having formulas A-E described herein, comprising: R 1 R 2 NH or R 1 NH2 (wherein, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10aryl groups.) and an amine having the formula: [ka] (In the formula, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 a heteroarylene group; and a silicon source selected from compounds having the formula: The silicon source and the amine are reacted with or without an organic solvent to obtain the following compounds represented by the formulas A to E: [ka] wherein n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R3 in formula D forms a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring with the two silicon atoms and at least one nitrogen atom. Examples of catalysts include, but are not limited to, tris(pentafluorophenyl)borane, BR3 (R is a linear, branched, or cyclic C1-C 10 Alkyl groups, C5-C 10 Aryl group, or C1-C 10alkoxy groups), 1,3-diisopropyl-4,5-dimethylimidazol-2-ylidene, 2,2'-bipyridyl, phenanthroline, Mg[N(SiMe3)2]2, [tris(4,4-dimethyl-2-oxazolinyl)phenylborate]MgMe, [tris(4,4-dimethyl-2-oxazolinyl)phenylborate]MgH, trimethylaluminum, triethylaluminum, aluminum chloride, Ca[N(SiMe3)2]2, dibenzylcalcium, {CH-[CMeNC6H3-2,6- i Pr2]2}CaH, triruthenium dodecacarbonyl, {CH-[CMeNC6H3-2,6- iPr2]2}Ca[N(SiMe3)2], bis(cyclopentadienyl)dialkyltitanium(IV), bis(cyclopentadienyl)titanium(IV) difluoride, bis(cyclopentadienyl)titanium(IV) dichloride, bis(cyclopentadienyl)titanium(IV) dihydride, TiMe2(dmpe)2[dmpe=1,2-bis(dimethylphosphino)ethane], (C5H5)2Ti(OAr)2[Ar=(2,6-(iPr)2C6H3)], (C5H5)2Ti(SiHRR')PM e3 [wherein R and R' are each independently selected from a hydrogen atom (H), a methyl group (Me), and a phenyl group (Ph)], bis(benzene)chromium(0), hexacarbonylchromium, decacarbonyldimanganese, [Mn(CO)4Br]2, pentacarbonyliron, (C5H5)Fe(CO)2Me, octacarbonyldicobalt, nickel(II) acetate, nickel(II) chloride, [(dippe)Ni(μ-H)]2 [dippe=1,2-bis(diisopropylphosphino)ethane], (R-indenyl)N i(PR'3)Me [wherein R is selected from 1-i-Pr, 1-SiMe3, and 1,3-(SiMe3)2, and R' is selected from methyl (Me) and phenyl (Ph) groups], [{Ni(η-CH2:CHSiMe2)2O}2{η-CH2:CHSiMe2)2O}], nickel(II) acetylacetonate, ni(cyclooctadiene)2, copper(II) fluoride, copper(I) chloride, copper(II) chloride, copper(I) bromide, copper(II) bromide, copper(I) iodide, copper(I) acetate, Cu(PPh3)3Cl, zinc chloride, Tris(4,4-dimethyl-2-oxazolinyl)phenylborate]ZnH, Sr[N(SiMe3)2]2, bis(cyclopentadienyl)dialkylzirconium(IV), bis(cyclopentadienyl)zirconium(IV) difluoride, bis(cyclopentadienyl)zirconium(IV) dichloride, bis(cyclopentadienyl)zirconium(IV) dihydride, [(Et3P)Ru(2,6-dimesitylthiophenolate)][B[3,5(CF3)2C6H3]4], (C5Me5)Ru(R3P) × (NCMe) 3-x ] +(Wherein, R is a linear, branched, or cyclic C1-C 10 Alkyl groups, and C5-C 10 aryl group, x=0, 1, 2, 3), tris(triphenylphosphine)rhodium(I) carbonyl hydride, di-μ-chloro-tetracarbonyldirhodium(I), tris(triphenylphosphine)rhodium(I) chloride (Wilkinson's catalyst), hexarhodium hexadecacarbonyl, tris(triphenylphosphine)rhodium(I) carbonyl hydride, bis(triphenylphosphine)rhodium(I) carbonyl chloride, [RhCl(cyclooctadiene)]2, tris(dibenzylideneacetone)dipalladium(0), tetrakis(triphenylphosphine)palladium(I), tungsten(II), palladium(II) acetate, palladium(II) chloride, palladium(II) iodide, cesium carbonate, (C5H5)2SmH, (C5Me5)2SmH, (NHC)Yb(N(SiMe3)2)2 [NHC=1,3-bis(2,4,6-trimethylphenyl)imidazol-2-ylidene)], hexacarbonyltungsten, decacarbonyldirhenium, dodecacarbonyltriosmium, dodecacarbonyltetrairidium, (acetylacetonato)dicarbonyliridium(I), (POCOP)IrHCl [(POCOP)=2,6(R2PO)2C6H3 (R is isopropyl ( i Pr), normal butyl ( n (Bu), and methyl (Me)], Ir(Me)2(C5Me5)L [where L is selected from PMe3 and PPh3], [Ir(cyclooctadiene)OMe]2, platinum(0)-1,3-divinyl-1,1,3,3-tetramethyldisiloxane (Karstedt's catalyst), H2PtCl6·nH2O (chloroplatinic acid), bis(tri-tert-butylphosphine)platinum(0), PtO2, and Pt(cyclooctadiene)2.

[0053] In certain embodiments of the methods described herein, a cyclic deposition process such as CCVD, ALD, or PEALD can be used, in which at least one silicon-containing precursor is used that has a formula described herein and is selected from organoaminosilane precursors, optionally having a nitrogen-containing source, such as ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen / hydrogen, ammonia plasma, nitrogen plasma, nitrogen / argon plasma, nitrogen / helium plasma, nitrogen / hydrogen plasma, organic amines (e.g., methylamine, ethylamine, isopropylamine, tert-butylamine), and / or plasmas derived from organic amines.

[0054] In some embodiments, the gas lines connecting the precursor container to the reaction chamber are heated to one or more temperatures depending on the process requirements, and the container of organoazasilane precursor having formulas A-E described herein is maintained at one or more temperatures for bubbling. In another embodiment, a solution containing at least one silicon-containing precursor having formulas described herein is injected into a vaporizer maintained at one or more temperatures for direct liquid injection.

[0055] A flow of argon and / or other gas may be used as a carrier gas to help deliver vapor of at least one organoaminosilane precursor to the reaction chamber during precursor pulsing. In some embodiments, the process pressure of the reaction chamber is about 10 torr or less, preferably about 1 torr.

[0056] In a typical ALD or CCVD process, a substrate, such as, but not limited to, silicon oxide, carbon-doped silicon oxide, flexible substrate, or metal nitride substrate, is heated on a heater stage in a reaction chamber, which is first exposed to a silicon-containing precursor to allow the organoaminosilane to chemically adsorb onto the surface of the substrate. A purge gas, such as nitrogen, argon, or other inert gas, sweeps the excess organoaminosilane that has not been absorbed out of the process chamber. After sufficient purging, an oxygen-containing source is introduced into the reaction chamber to react with the absorbed surface, and then another gas purge removes the reaction by-products from the chamber. This process cycle can be repeated to achieve the desired film thickness. In another embodiment, pumping under vacuum can be used to remove the excess organoaminosilane that has not been absorbed out of the process chamber, and after a sufficient vacuum while pumping, an oxygen-containing source is introduced into the reaction chamber to react with the absorbed surface, and then another gas purge removes the reaction by-products from the chamber. In yet another embodiment, the organoaminosilane and the oxygen-containing source are flowed together into a reaction chamber and reacted on the substrate surface to deposit silicon oxide, carbon-doped silicon oxide. In some embodiments of cyclic CVD, a purge step is not used.

[0057] In this or other embodiments, the steps of the methods described herein can be performed in various orders, either sequentially or simultaneously (e.g., during at least a portion of another step), and any combination thereof. Each step of supplying the precursor and nitrogen-containing source gas can be performed by varying the duration for which they are supplied to vary the stoichiometry of the resulting silicon-containing film.

[0058] In another embodiment of the methods disclosed herein, a film containing both silicon and nitrogen is formed using an ALD, PEALD, CCVD, or PECCVD deposition method, the method comprising: a. providing a substrate in an ALD reactor; b. In the ALD reactor, [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; c. chemisorbing at least one organoaminosilane precursor onto the substrate; d. purging the at least one unreacted organoaminosilane precursor using a purge gas; e. providing a nitrogen-containing source to the organoaminosilane precursors on the heated substrate to react with the chemisorbed at least one organoaminosilane precursor; f. optionally, purging or pumping away unreacted nitrogen-containing source.

[0059] In another aspect, a method of forming a film selected from a silicon oxide film and a carbon doped silicon oxide film via a PEALD or PECCVD deposition process, the method comprising: a. providing a substrate in a reactor; b. adding the following formulas A to E to the reactor: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; c. purging the reactor with a purge gas along with oxygen; d. applying an RF plasma; and e. purging the reactor with a purge gas or pumping the reactor to remove unreacted organoaminosilane and any by-products, wherein steps b through e are repeated until a desired film thickness is obtained.

[0060] In another aspect of the methods disclosed herein, a silicon-containing film is formed using an ALD deposition method, the ALD deposition method comprising: a. providing a substrate in a reactor; b. adding the following formulas A to E to the reactor: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; c. chemisorbing at least one organoaminosilane precursor onto the substrate; d. purging the at least one organoaminosilane precursor that is unreacted using a purge gas; e. providing an oxygen-containing source to the organoaminosilane precursors on the heated substrate to react with said chemisorbed at least one organoaminosilane precursor; f. Optionally, purging or pumping away unreacted oxygen-containing source.

[0061] In another aspect, a method of forming a silicon nitride or silicon carbonitride film via a PEALD or PECCVD process, the method comprising: a. providing a substrate in a reactor; b. adding a nitrogen-containing source and the following compounds of formulas A to E: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; c. purging the reactor with a purge gas along with a nitrogen-containing source; d. applying an RF plasma; and e. purging the reactor with a purge gas or pumping the reactor to remove unreacted organoaminosilane and any by-products, wherein steps b through e are repeated until a desired film thickness is obtained.

[0062] The above steps define one cycle of the method described herein, and this cycle can be repeated until the desired thickness of silicon-containing film is obtained.In this embodiment or other embodiments, the steps of the method described herein can be performed in various orders, and can be performed sequentially or simultaneously (e.g., during at least a portion of another step), and any combination thereof.Each step of supplying the precursor and oxygen-containing source can be performed by varying the duration of supplying them to vary the stoichiometric composition of the resulting silicon-containing film, provided that less than the stoichiometric amount of oxygen is always used relative to the available silicon.

[0063] For multi-component silicon-containing films, other precursors, such as silicon-containing precursors, nitrogen-containing precursors, reducing agents, or other reagents, can be alternately introduced into the reaction chamber.

[0064] In a further embodiment of the methods described herein, the silicon-containing film is deposited using a thermal CVD process. In this embodiment, the method comprises: a. placing one or more substrates in a reactor heated to one or more temperatures ranging from ambient temperature to about 700° C.; b. Formulas A-E below: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; c. providing an oxygen-containing source to the reactor to at least partially react with at least one organoaminosilane precursor to deposit a silicon-containing film on one or more substrates. In some embodiments of the CVD method, the reactor is maintained at a pressure ranging from 10 mTorr to 760 Torr during the introducing step. The above steps define one cycle of the method described herein, which can be repeated until a desired thickness of the silicon-containing film is obtained. It is understood that in this or other embodiments, the steps of the method described herein can be performed in various orders, sequentially or simultaneously (e.g., during at least a portion of another step), and any combination thereof. Each step of providing the precursor and oxygen-containing source can be performed by varying the duration for which they are provided to vary the stoichiometry of the resulting silicon-containing film, provided that always less than a stoichiometric amount of oxygen is used relative to the available silicon.

[0065] In a further embodiment of the method described herein, the precursors of formulas A-E described herein are used to deposit amorphous or crystalline silicon films. In this embodiment, the method comprises: a. placing one or more substrates in a reactor heated to one or more temperatures ranging from ambient temperature to about 700° C.; b. Formulas A-E below: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; and c. providing a reducing agent to the reactor to at least partially react with at least one organoaminosilane precursor to deposit a silicon-containing film on the one or more substrates. The reducing agent is selected from the group consisting of hydrogen, hydrogen plasma, and hydrogen chloride. In some embodiments of the CVD method, the reactor is maintained at a pressure ranging from 10 mTorr to 760 Torr during the introducing step. The above steps define one cycle of the method described herein, which can be repeated until a desired thickness of the film is obtained.

[0066] For multi-component silicon-containing films, other precursors, such as silicon-containing precursors, nitrogen-containing precursors, oxygen-containing sources, reducing agents, and / or other reagents, can be alternately introduced into the reaction chamber.

[0067] In a further embodiment of the methods described herein, the silicon-containing film is deposited using a thermal CVD process. In this embodiment, the method comprises: a. placing one or more substrates in a reactor heated to one or more temperatures ranging from ambient temperature to about 700° C.; b. Formulas A-E below: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; providing a nitrogen-containing source to the reactor to at least partially react with the at least one organoaminosilane precursor to deposit a silicon-containing film on the one or more substrates. In some embodiments of the CVD method, during the introducing step, the reactor is maintained at a pressure in the range of 10 mTorr to 760 Torr.

[0068] In further embodiments of the methods described herein, the organoaminosilane precursor is used to deposit a silicon-containing film that is an amorphous film, a crystalline silicon film, or a mixture thereof. In these embodiments, the silicon-containing film is formed using a deposition method selected from ALD or cyclic CVD, the deposition method comprising: placing the substrate in a reactor heated to a temperature ranging from ambient temperature to about 700° C. and maintained at a pressure of 1 Torr or less; Formulas A to E below: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; and providing a reducing agent to the reactor to at least partially react with at least one organoaminosilane precursor to deposit a silicon-containing film on one or more substrates, where the reducing agent is at least one selected from the group consisting of hydrogen, hydrogen plasma, and hydrogen chloride. The above steps define one cycle of the method described herein, which can be repeated until a desired thickness of the silicon-containing film is obtained. The desired thickness of the film is between 1 Å and 10,000 Å.

[0069] In another aspect, a method of forming a silicon-containing film on at least one surface of a substrate using a deposition process selected from a plasma-enhanced atomic layer deposition (PEALD) process and a plasma-enhanced cyclic chemical vapor deposition (PECCVD) process, the method comprising: a. providing a substrate in an ALD reactor; b. In the ALD reactor, [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; c. purging the ALD reactor with an inert gas; d. providing a plasma source in the ALD reactor; and e. purging the ALD reactor with an inert gas, where steps b through e are repeated until a desired thickness of the silicon-containing film is obtained. The plasma source is selected from the group consisting of hydrogen plasma, argon plasma, helium plasma, neon plasma, xenon plasma, and mixtures thereof. The silicon-containing film is selected from the group consisting of silicon carbonitride, silicon carbide, silicon nitride, silicon carbonitride, and silicon carboxynitride.

[0070] In yet another aspect, a method for depositing an amorphous or crystalline silicon film via atomic layer deposition or cyclic chemical vapor deposition process or chemical vapor deposition at a lower temperature than conventional silicon precursors, the method comprising: a. providing a substrate in a reactor; b. adding the following formulas A to E to the reactor: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; and c. purging the reactor with a purge gas, wherein steps b-c are repeated until a desired thickness of the silicon film is obtained.

[0071] The precursors of formulas A-E can generate H2Si: diradicals or H3Si· radicals upon heating, which can promote the formation of oligomers containing Si-Si bonds or can be anchored to the surface of a substrate. These oligomers or anchored SiH2 or SiH3 can further form amorphous silicon films. In this or other embodiments, these oligomers serve as a seed layer for the subsequent deposition of silicon or silicon oxide films.

[0072] In some embodiments, the organoaminosilane precursors having formulas A-E described herein can also be used as dopants for metal-containing films, such as, but not limited to, metal oxide or metal nitride films. In these embodiments, the metal-containing films are deposited using ALD or CVD processes, such as those described herein, using metal alkoxide, metal amide, or volatile organometallic precursors. Examples of suitable metal alkoxide precursors that can be used in the methods disclosed herein include, but are not limited to, alkoxides of Group 3-6 metals, complexes of Group 3-6 metals with both alkoxy and alkyl-substituted cyclopentadienyl ligands, complexes of Group 3-6 metals with both alkoxy and alkyl-substituted pyrrole ligands, complexes of Group 3-6 metals with both alkoxy and diketonate ligands, and complexes of Group 3-6 metals with both alkoxy and ketoester ligands.Examples of suitable metal amide precursors that can be used in the methods disclosed herein include, but are not limited to, tetrakis(dimethylamino)zirconium (TDMAZ), tetrakis(diethylamino)zirconium (TDEAZ), tetrakis(ethylmethylamino)zirconium (TEMAZ), tetrakis(dimethylamino)hafnium (TDMAH), tetrakis(diethylamino)hafnium (TDEAH), and tetrakis(ethylmethylamino)hafnium (TEMAH), tetrakis(dimethylamino)titanium (TDMAT), tetrakis(diethylamino)titanium (TDEAT), tetrakis(ethylmethylamino)titanium (TEMAT), tert-butyliminotri(diethylamino)tantalum (TBTDET), tert-butyliminotri(dimethylamino)tantalum (TBTDM), and tert-butyliminotri(dimethylamino)tantalum (TBTDM). T), tert-butylimino tri(ethylmethylamino)tantalum (TBTEMT), ethylimino tri(diethylamino)tantalum (EITDET), ethylimino tri(dimethylamino)tantalum (EITDMT), ethylimino tri(ethylmethylamino)tantalum (EITEMT), tert-amylimino tri(dimethylamino)tantalum (TAIMAT), tert-amylimino tri(diethylamino)tantalum, pentakis(dimethylamino)tantalum, tert-amylimino tri(ethylmethylamino)tantalum, bis(tert-butylimino)bis(dimethylamino)tungsten (BTBMW), bis(tert-butylimino)bis(diethylamino)tungsten, bis(tert-butylimino)bis(ethylmethylamino)tungsten, and combinations thereof. Examples of suitable organometallic precursors that can be used in the methods disclosed herein include, but are not limited to, Group 3 metal cyclopentadienyls or alkylcyclopentadienyls, where examples of Group 3-6 metals include, but are not limited to, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Er, Yb, Lu, Ti, Hf, Zr, V, Nb, Ta, Cr, Mo, and W.

[0073] In some embodiments, the resulting silicon-containing film or coating may be exposed to a pre-deposition treatment, such as, but not limited to, a plasma treatment, a chemical treatment, ultraviolet light exposure, electron beam exposure, and / or other treatment that affects one or more properties of the film.

[0074] In some embodiments, the silicon-containing films described herein have a dielectric constant of about 6 or less. In these or other embodiments, the films can have a dielectric constant of about 5 or less, or about 4 or less, or about 3.5 or less. However, it is contemplated that films having other dielectric constants (e.g., higher or lower) can be formed depending on the desired end use of the film. Examples of silicon-containing films or silicon-containing films formed using the organoaminosilane precursors and processes described herein are represented by the formula Si x O y C z N v H w where Si is in the range of about 10% to about 40%, O is in the range of about 0% to about 65%, C is in the range of about 0% to about 75%, or in the range of about 0% to about 50%, N is in the range of about 0% to about 75%, or in the range of about 0% to about 50%, and H is in the range of about 0% to about 50%, where x+y+z+v+w=100 atomic mass as measured, for example, by XPS or other means.

[0075] As described above, the method described herein can be used to deposit a silicon-containing film on at least a portion of a substrate.Examples of suitable substrates include, but are not limited to, silicon, SiO2, Si3N4, OSG, FSG, silicon carbide, hydrogenated silicon carbide, silicon nitride, hydrogenated silicon nitride, silicon carbonitride, hydrogenated silicon carbonitride, boron nitride, anti-reflective coating, photoresist, flexible substrate, organic polymer, porous organic and inorganic material, metal, such as copper and aluminum, and, but are not limited to, TiN, Ti(C)N, TaN, Ta(C)N, Ta, W, or WN.The film is compatible with various subsequent processing steps, such as, for example, chemical mechanical planarization (CMP) and anisotropic etching processes.

[0076] The deposited films have applications including, but not limited to, computer chips, optical devices, magnetic information storage devices, coatings on supporting materials or substrates, microelectromechanical systems (MEMS), nanoelectromechanical systems, thin film transistors (TFTs), light emitting diodes (LEDs), organic light emitting diodes (OLEDs), IGZO, and liquid crystal displays (LCDs).

[0077] The following examples illustrate, but in no way limit, methods for preparing the organoaminosilane precursors described herein, as well as for depositing silicon-containing films. EXAMPLES

[0078] In the following examples, unless otherwise specified, properties were obtained from sample films deposited on medium resistivity (8-12 Ωcm) single crystal silicon wafer substrates.

[0079] Example 1: Synthesis of 1-di-iso-propylamino-1,4-disilabutane In a three-necked round-bottom flask equipped with a mechanical stirrer, a condenser, and a dropping funnel, a solution of 1 equivalent of 1,4-disilabutane in hexane was cooled to -20°C using a cold bath. With stirring, a solution of 0.5 equivalents of lithium diisopropylamide in tetrahydrofuran (THF) was added dropwise using the dropping funnel. After the addition was complete, the reaction mixture was allowed to warm to room temperature. The reaction mixture was stirred overnight at room temperature and then filtered. The white precipitate (lithium hydride) formed from the reaction as a by-product was filtered off. The solvent and excess 1,4-disilabutane in the filtrate were removed by distillation. The product (1-di-iso-propylamino-1,4-disilabutane) was obtained by vacuum distillation. Gas chromatography (GC) confirmed that it was 1-di-iso-propylamino-1,4-disilabutane with a purity of >98%. GC-MS showed the following peaks: 189 (M+), 188 (M-1), 174 (M-15), 159, 144, 130, 102.

[0080] Example 2: Synthesis of 1-t-butyl-1-aza-2-5-disilacyclopentane In a three-necked round-bottom flask equipped with a mechanical stirrer, condenser, and dropping funnel, a solution of 1 equivalent of 1,4-disilabutane in hexane was cooled to -20°C using a cold bath. With stirring, a solution of 0.5 equivalents of lithium t-butylamide in THF was added dropwise using the dropping funnel. After the addition was complete, the reaction mixture was allowed to warm to room temperature. The reaction mixture was stirred overnight at room temperature and then filtered. The white precipitate (lithium hydride) formed from the reaction as a by-product was filtered off. The solvent and excess 1,4-disilabutane in the filtrate were removed by distillation. The product (1-t-butyl-1-aza-2-5-disilacyclopentane) was obtained by vacuum distillation. Gas chromatography (GC) confirmed it to be >98% pure. GC-MS showed the following peaks: 159 (M+), 158 (M-1), 144 (M-15), 128, 114, 100.

[0081] Example 3: Synthesis of 1,4-bis(di-iso-propylamino)-1,4-disilabutane In a three-necked round bottom flask equipped with a mechanical stirrer, a condenser, and a dropping funnel, a solution of 0.5 equivalents of 1,4-disilabutane in hexane was cooled to -20°C using a cold bath. With stirring, a solution of 1 equivalent of lithium di-iso-propylamide in THF was added dropwise using the dropping funnel. After the addition was complete, the reaction mixture was allowed to warm to room temperature. The reaction mixture was stirred overnight at room temperature and then filtered. The white precipitate (lithium hydride) formed from the reaction as a by-product was filtered off. The solvent in the filtrate was removed by distillation. The product (1,4-bis(di-iso-propylamino)-1,4-disilabutane) was obtained by vacuum distillation. Boiling point 124°C / 1 torr. GC-MS showed the following peaks: 288 (M+), 287 (M-1), 243, 229, 207, 188, 144, 130. 1 H NMR: 4.59 (s, 4H), 3.03 (m, 4H), 1.08 (d, 24H), 0.73 (t, 4H). 13 C NMR: 47.76, 24.42, 7.76.

[0082] Example 4: Synthesis of 1-diethylamino-1,4-disilabutane and 1,4-bis(diethylamino)-1,4-disilabutane Two equivalents of 1,4-disilabutane and one equivalent of diethylamine were combined in a scintillation vial. To this, 1 mol% of dodecacarbonyltriruthenium catalyst was added as a solution in THF and the mixture was stirred overnight. The two major products observed in the solution were 1-diethylamino-1,4-disilabutane and 1,4-bis(diethylamino)-1,4-disilabutane. GC-MS showed the following peaks: (a) 1-diethylamino-1,4-disilabutane: 161 (M+), 146 (M-15), 130, 116, 102, 89, 72; (b) 1,4-bis(diethylamino)-1,4-disilabutane: 232 (M+), 217 (M-15), 203, 187, 173, 160, 146, 130, 116.

[0083] Additional organoaminosilane precursors of Formulas A through E were prepared and characterized by mass spectrometry (MS) in a manner similar to Examples 1 through 4. The molecular weight (MW), structure, and corresponding major MS fragmentation peak of each organoaminosilane precursor are provided in Table 1 to confirm its identity. Table 1. Organoaminosilanes having formulas A, B, C, D, and E [Table 7] [Table 8] [Table 9] [Table 10] [Table 11] [Table 12] [Table 13] [Table 14] [Table 15]

[0084] Example 5: Atomic Layer Deposition of Silicon-Containing Films Using 1-Di-iso-propylamino-1-4-disilabutane and Ozone The following depositions were performed on a laboratory-scale ALD processing tool at two temperature conditions (55 °C and 100 °C). The silicon precursor was delivered to the chamber by vapor aspirate. Thus, all gases (e.g., purge and reactant gases or precursor and oxygen source) were preheated before entering the deposition zone. Gas and precursor flow rates were controlled using ALD diaphragm valves with fast actuation. The substrates used during deposition were 12-inch long silicon strips. Thermocouples were attached to the sample holder to check the substrate temperature during deposition. The depositions were performed using ozone (6-19 wt%) as the oxygen source gas.

[0085] A typical ALD cycle includes the following steps: a. providing a substrate to an ALD reactor; b. providing at least one organoaminosilane precursor into an ALD reactor for 6 seconds; c. purging the ALD reactor with an inert gas for 6 seconds; d. providing ozone to the ALD reactor for 4 seconds; e. purging the ALD reactor with an inert gas for 6 seconds; Steps b through e are repeated until the desired thickness of the film is obtained. The thickness and refractive index of the film were measured using a FilmTek 2000SE ellipsometer by fitting the reflectance data from the film to a pre-established physical model (e.g., Lorentz oscillator model). Wet etch rates were performed using a 1% solution of 49% hydrofluoric (HF) acid in deionized water. Thermal oxide wafers were used as a reference for each batch to verify the solution concentration. A typical thermal oxide wafer wet etch rate for a 1% HF in H2O solution is 0.5 Å / sec. The film thickness before and after etching was used to calculate the wet etch rate. The thickness non-uniformity was calculated from six measurements using the following formula: % non-uniformity = ((max-min) / (2 * The elemental composition and density of the film are analyzed by X-ray photoelectron spectroscopy (XPS). The growth rate (GPC) is determined by dividing the film thickness by the total number of cycles. Table 2. Process parameters, growth / cycle (GPC) and refractive index of silicon-containing films using 1-di-iso-propylamino-1,4-disilabutane and ozone [Table 16] Table 3. Film composition of silicon-containing films measured by XPS using 1-di-iso-propylamino-1,4-disilabutane and ozone [Table 17]

[0086] FIG. 1 provides the growth rate / cycles versus temperature for 1-di-iso-propylamino-1,4-disilabutane films (average value from films 1, 3, 5 at 100° C.) and example film 4, as well as films deposited via a thermal ALD process using the following organoaminosilanes: bis(diethylamino)silane (BDEAS: I. Suzuki, K. Yanagita, and C. Dussarrat, ECS Trans.3 (15), 119 (2007) and MW O'Neill, HR Bowen, A. Derecskei-Kovacs, KS Cuthill, B. Han and M. Xiao, Electrochemistry Society Interface Winter 2011, 33 (2011)), bis(tert-butylamino)silane (BTBAS: MW O'Neill, HR Bowen, A. Derecskei-Kovacs, KS Cuthill, B. Han and M. Xiao, Electrochemistry Society Interface Winter 2011, 33 (2011)), bis(ethylmethylamino)silane (BEMAS: SJWon, HS. Jung, S. Suh, YJ Choi, N.-I. Lee, CS Hwang, HJ Kim, J. Vac. Sci. Technol. A 30(1), 01A126 (2012))), tris(dimethylamino)silane (TRDMAS: L. Han, and Z. Chen, Z. ECS Journal of Solid State Science and Technology 2(11): N228-N236 (2013)), di-sec-butylaminosilane (DSBAS: A. Mallikarjunan, A. Derecskei-kovacs, H. Chandra, B. Han, M. Xiao, X. Lei, MLO Neill, H. Liang, H. Bo, Z. Qingfan, H.Cheng, 13th International Conference on Atomic Layer Deposition (2013)). As shown in FIG. 1, silicon-containing films deposited using the organoaminosilanes described herein exhibited faster growth rates compared to other reference organoaminosilane precursors. Furthermore, the deposition temperature can be extended to one or more temperatures below 100° C., such as example film 4, which was deposited at a temperature of 55° C. The carbon concentration in the films ranged from 0.3 wt.% to 9.6 wt.%, depending on the ozone concentration, suggesting that it is possible to tailor the physical properties of the resulting silicon-containing films.

[0087] Example 6: Plasma-enhanced atomic layer deposition of silicon-containing films using 1-di-iso-propylamino-1,4-disilabutane and nitrogen / argon plasma Deposition of silicon-containing films was performed using 1-di-iso-propylamino-1,4-disilabutane and nitrogen / argon plasma. Silicon wafers were heated to 100° C. or 300° C., respectively. The deposition process was performed using a 300 mm production tool, ASM Stellar 3000, with 1000 cycles, using the following process conditions: a. Providing a Substrate to an ALD Reactor b. Introducing an organoaminosilane precursor: 1-di-iso-propylamino-1,4-disilabutane Delivery conditions: Ar carrier gas 200 sccm, precursor vessel was kept at room temperature Chamber pressure: 2 Torr Precursor pulse: 1 second c. Inert gas purge Argon flow: 300sccm Chamber pressure: 2 Torr Purge time: 5 seconds d. Nitrogen / Argon Plasma Argon flow: 500sccm Nitrogen flow: 200sccm Chamber pressure: 2 Torr Plasma power: 500W Plasma Time: 5 seconds e. Purge plasma Argon flow: 300sccm Chamber pressure: 2 Torr Purge time: 0.5 seconds

[0088] The deposition rate, refractive index, density, and wet etch rate of the films obtained in dilute HF are listed below in Table 4. Referring to the data in Table 4, it is believed that oxygen comes from post-deposition air exposure when samples are sent for XPS analysis. Table 4. Deposition rate, refractive index, and film properties of films deposited using 1-di-iso-propylamino-1,4-disilabutane and nitrogen / argon plasma. [Table 18]

[0089] Example 7: Plasma-enhanced atomic layer deposition of silicon-containing films using 1-di-iso-propylamino-1,4-disilabutane and argon plasma Deposition of silicon-containing films was performed using 1-di-iso-propylamino-1,4-disilabutane and argon plasma. Silicon wafers were heated to 100° C. or 300° C., respectively. The deposition process was performed using a 300 mm production tool, ASM Stellar 3000, with 1000 cycles, using the following process conditions: a. Providing a Substrate to an ALD Reactor b. Introducing an organoaminosilane precursor: 1-di-iso-propylamino-1,4-disilabutane Delivery conditions: Ar carrier gas 200 sccm, precursor vessel was kept at room temperature Chamber pressure: 2 Torr Precursor pulse: 1 second c. Inert gas purge Argon flow: 300sccm Chamber pressure: 2 Torr Purge time: 2 seconds d. Argon plasma Argon flow: 500sccm Chamber pressure: 2 Torr Plasma power: 500W Plasma Time: 5 seconds e. Purge plasma Argon flow: 300sccm Chamber pressure: 2 Torr Purge time: 2 seconds

[0090] The deposition rate, refractive index, film composition, density, and wet etch rate of the films obtained in dilute HF are listed below in Table 5. Referring to the data in Table 5, it is believed that oxygen comes from post-deposition air exposure when samples are sent for XPS analysis. Table 5. Deposition rate, refractive index, and film properties of films deposited using 1-di-iso-propylamino-1,4-disilabutane and argon plasma. [Table 19]

[0091] The wet etch rate of 0.05 Å / s in dilute HF is much less than the rate (0.5 Å / s) of a typical thermal oxide film under the same conditions, indicating that the organoaminosilanes described herein affect the resulting physical properties of the silicon-containing films deposited therefrom.

[0092] The following are non-limiting examples of the present invention. <1> Formulas A to E below: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forms a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with the two silicon atoms and at least one nitrogen atom. <2> The R 1 and R 2 are joined together to form a ring, <1> The organic aminosilane described in <3> Formula A (where R 1 and R 2 are the same and are selected from the group consisting of methyl, ethyl, isopropyl, n-propyl, and sec-butyl, and R 3 is selected from the group consisting of methylene and ethylene, n=1, and m=0; <1> The organic aminosilane described in <4> Formula D (wherein, R 3 If is ethylene or propylene, R 1 isopropyl (Pr i ) is not. ) contains compounds, <1> The organic aminosilane described in <5> The compounds include compounds having the formula A, the compounds being 1-dimethylamino-1,3-disilapropane, diisopropylamino-1,3-disilapropane, 1-di-secbutylamino-1,3-disilanepropane, 1-diisobutylamino-1,3-disilapropane, 1-di-tertpentylamino-1,3-disilapropane, 1-diethylamino-1,3-disilapropane, 1-dimethylamino-1,4-disilabutane, 1-diethylamino-1,4-disilabutane, 1-diisopropylamino-1,4-disilabutane, 1,3-bis(dimethylamino)-1,3-disilapropane, 1,3-bis(diisopropylamino)-1,3-disilapropane, 1,3-bis(di-sec-butylamino)-1,3-disilapropane, 1,3-bis(diisobutane). 1,4-bis(di-tert-pentylamino)-1,3-disilapropane, 1,3-bis(diethylamino)-1,3-disilapropane, 1,4-bis(dimethylamino)-1,4-disilabutane, 1,4-bis(diethylamino)-1,4-disilabutane, 1,4-bis(diisopropylamino)-1,3-disilabutane, 1,4-bis(di-sec-butylamino)-1,4-disilabutane, 1,4-bis(diisobutylamino)-1,4-disilabutane, 1,4-bis(isopropyl-n-propylamino)-1,4-disilabutane, 1,3-bis(ethylmethylamino)-1,3-disilabutane, and 1,4-bis(ethylmethylamino)-1,4-disilabutane; <1> The organic aminosilane described in <6> selected from the group consisting of 1-diisopropylamino-1,4-disilabutane, 1-ethylmethylamino-1,4-disilabutane, 1-di-sec-butylamino-1,4-disilabutane, 1-phenylmethylamino-1,4-disilabutane, 2,6-dimethylpiperidino-1,4-disilabutane, phenylethylamino-1,4-disilabutane, 1-diisopropylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropane, 1-di-sec-butylamino-1,3-disilapropane, 1-phenylmethylamino-1,3-disilapropane, 2,6-dimethylpiperidino-1,3-disilapropane, and phenylethylamino-1,3-disilapropane; <1> The organic aminosilane described in <7> (a) Formulas A to E below: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 wherein, together with the two silicon atoms and at least one nitrogen atom, a ring selected from a four-membered ring, a five-membered ring, or a six-membered ring is formed; and (b) a solvent, the solvent having a boiling point, the difference between the boiling point of the solvent and the boiling point of the at least one organoaminosilane being 40° C. or less; A composition comprising: <8> 1-Dimethylamino-1,4-disilabutane, 1-Diethylamino-1,4-disilabutane, 1-Ethylmethylamino-1,4-disilabutane, 1-Diisopropylamino-1,4-disilabutane, 1-Di-sec-butylamino-1,4-disilabutane, 1-Phenylmethylamino-1,4-disilabutane, 2,6-Dimethylpiperidino-1,4-disilabutane, Phenylethylamino-1,4-disilabutane, 1-Dimethylamino-1,3-disilabutane at least one selected from the group consisting of 1,3-diphenylamino-1,3-disilapropane, 1-diethylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropaneopylamino-1,3-disilapropane, 1-di-sec-butylamino-1,3-disilapropane, 1-phenylmethylamino-1,3-disilapropane, 2,6-dimethylpiperidino-1,3-disilapropane, and phenylethylamino-1,3-disilapropane; <7> The organic aminosilane described in <9> At least one selected from the group consisting of ethers, tertiary amines, alkyl hydrocarbons, aromatic hydrocarbons, and tertiary amino ethers; <7> The solvent according to claim 1. <10> 1. A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; Formulas A to E below: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; introducing a nitrogen-containing source into the reactor, wherein the at least one organoaminosilane precursor and the nitrogen-containing source react to form a film on the at least one surface; A method comprising: <11> The at least one organoaminosilane precursor may be selected from the group consisting of 1-dimethylamino-1,4-disilabutane, 1-diethylamino-1,4-disilabutane, 1-ethylmethylamino-1,4-disilabutane, 1-diisopropylamino-1,4-disilabutane, 1-di-sec-butylamino-1,4-disilabutane, 1-phenylmethylamino-1,4-disilabutane, 2,6-dimethylpiperidino-1,4-disilabutane, and phenylethylamino-1,4-disilabutane. , 1-dimethylamino-1,3-disilapropane, 1-diethylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropane, diisopropylamino-1,3-disilapropane, 1-di-sec-butylamino-1,3-disilapropane, 1-phenylmethylamino-1,3-disilapropane, 2,6-dimethylpiperidino-1,3-disilapropane, and phenylethylamino-1,3-disilapropane; <10> The method described above. <12> the nitrogen-containing source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen / hydrogen, ammonia plasma, nitrogen plasma, nitrogen / argon plasma, nitrogen / helium plasma, nitrogen / hydrogen plasma, organic amines, organic amine plasma, and mixtures thereof; <10> The method described above. <13> the silicon-containing film is selected from the group consisting of silicon nitride and silicon carbonitride; <10> The method described above. <14> 1. A method for producing a silicon-containing film via an atomic layer deposition (ALD) process, the method comprising: a. providing a substrate in an ALD reactor; b. adding to the ALD reactor the following formulas A-E: [ka] (R in the formula 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; c. purging the ALD reactor with an inert gas; d. providing a nitrogen-containing source in the ALD reactor; e. purging the ALD reactor with an inert gas; and steps b through e are repeated until a desired thickness of the film is obtained. <15> The at least one organoaminosilane precursor may be selected from the group consisting of 1-dimethylamino-1,4-disilabutane, 1-diethylamino-1,4-disilabutane, 1-ethylmethylamino-1,4-disilabutane, 1-diisopropylamino-1,4-disilabutane, 1-di-sec-butylamino-1,4-disilabutane, 1-phenylmethylamino-1,4-disilabutane, 2,6-dimethylpiperidino-1,4-disilabutane, and phenylethylamino-1,4-disilabutane. , 1-dimethylamino-1,3-disilapropane, 1-diethylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropane, diisopropylamino-1,3-disilapropane, 1-di-sec-butylamino-1,3-disilapropane, 1-phenylmethylamino-1,3-disilapropane, 2,6-dimethylpiperidino-1,3-disilapropane, and phenylethylamino-1,3-disilapropane; <14> The method described above. <16> the nitrogen-containing source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen / hydrogen, ammonia plasma, nitrogen plasma, nitrogen / argon plasma, nitrogen / helium plasma, nitrogen / hydrogen plasma, organic amines, organic amine plasma, and mixtures thereof; <14> The method described above. <17> the silicon-containing film is selected from the group consisting of silicon nitride and silicon carbonitride; <14> The method described above. <18> 1. A method for forming a silicon-containing film on at least one surface of a substrate using a deposition process selected from a plasma-enhanced atomic layer deposition (PEALD) process and a PECCVD process, the method comprising: a. providing a substrate in an ALD reactor; b. adding to the ALD reactor the following formulas A-E: [ka] (In the formula, R 1 is a straight or branched C1-C 10Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; c. purging the ALD reactor with an inert gas; d. providing a plasma nitrogen-containing source in the ALD reactor; e. purging the ALD reactor with an inert gas; and steps b through e are repeated until a desired thickness of the film is obtained. <19> The at least one organoaminosilane precursor may be selected from the group consisting of 1-dimethylamino-1,4-disilabutane, 1-diethylamino-1,4-disilabutane, 1-ethylmethylamino-1,4-disilabutane, 1-diisopropylamino-1,4-disilabutane, 1-di-sec-butylamino-1,4-disilabutane, 1-phenylmethylamino-1,4-disilabutane, 2,6-dimethylpiperidino-1,4-disilabutane, and phenylethylamino-1,4-disilabutane. , 1-dimethylamino-1,3-disilapropane, 1-diethylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropane, diisopropylamino-1,3-disilapropane, 1-di-sec-butylamino-1,3-disilapropane, 1-phenylmethylamino-1,3-disilapropane, 2,6-dimethylpiperidino-1,3-disilapropane, and phenylethylamino-1,3-disilapropane; <18> The method described above. <20> the nitrogen-containing source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen / hydrogen, ammonia plasma, nitrogen plasma, nitrogen / argon plasma, nitrogen / helium plasma, nitrogen / hydrogen plasma, organic amines, organic amine plasma, and mixtures thereof; <18> The method described above. <21> the silicon-containing film is selected from the group consisting of silicon nitride and silicon carbonitride; <18> The method described above. <22> A method for forming a silicon oxide or carbon-doped silicon oxide film on a substrate, comprising reacting an oxygen-containing source with a compound of the following formulas A-E: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 (R) is a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom. <23> The vapor deposition is at least one selected from the group including at least one selected from chemical vapor deposition, low pressure vapor deposition, plasma enhanced chemical vapor deposition, cyclic chemical vapor deposition, plasma enhanced cyclic chemical vapor deposition, atomic layer deposition, and plasma enhanced atomic layer deposition; <22> The method described above. <24> The at least one organoaminosilane precursor may be selected from the group consisting of 1-dimethylamino-1,4-disilabutane, 1-diethylamino-1,4-disilabutane, 1-ethylmethylamino-1,4-disilabutane, 1-diisopropylamino-1,4-disilabutane, 1-di-sec-butylamino-1,4-disilabutane, 1-phenylmethylamino-1,4-disilabutane, 2,6-dimethylpiperidino-1,4-disilabutane, and phenylethylamino-1,4-disilabutane. , 1-dimethylamino-1,3-disilapropane, 1-diethylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropane, diisopropylamino-1,3-disilapropane, 1-di-sec-butylamino-1,3-disilapropane, 1-phenylmethylamino-1,3-disilapropane, 2,6-dimethylpiperidino-1,3-disilapropane, and phenylethylamino-1,3-disilapropane; <22> The method described above. <25> The reacting step is carried out at a temperature of 200° C. or less. <22> The method described above. <26> The reacting step is carried out at a temperature of 100° C. or less. <22> The method described above. <27> The reacting step is carried out at a temperature of 50° C. or less. <22> The method described above. <28> 1. A method for forming a silicon oxide or carbon-doped silicon oxide film on a substrate, comprising the steps of: Formulas A to E below: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom on the substrate by vapor deposition from a composition comprising at least one organoaminosilane precursor comprising a compound represented by one of the following formulas: and at least one oxygen-containing source; The method, wherein the vapor deposition is at least one selected from chemical vapor deposition, low pressure vapor deposition, plasma enhanced chemical vapor deposition, cyclic chemical vapor deposition, plasma enhanced cyclic chemical vapor deposition, atomic layer deposition, and plasma enhanced atomic layer deposition. <29> The at least one organoaminosilane precursor may be selected from the group consisting of 1-dimethylamino-1,4-disilabutane, 1-diethylamino-1,4-disilabutane, 1-ethylmethylamino-1,4-disilabutane, 1-diisopropylamino-1,4-disilabutane, 1-di-sec-butylamino-1,4-disilabutane, 1-phenylmethylamino-1,4-disilabutane, 2,6-dimethylpiperidino-1,4-disilabutane, and phenylethylamino-1,4-disilabutane. , 1-dimethylamino-1,3-disilapropane, 1-diethylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropane, diisopropylamino-1,3-disilapropane, 1-di-sec-butylamino-1,3-disilapropane, 1-phenylmethylamino-1,3-disilapropane, 2,6-dimethylpiperidino-1,3-disilapropane, and phenylethylamino-1,3-disilapropane; <28> The method described above. <30> The reacting step is carried out at a temperature of 200° C. or less. <28> The method described above. <31> The reacting step is carried out at a temperature of 100° C. or less. <28> The method described above. <32> The reacting step is carried out at a temperature of 50° C. or less. <28> The method described above. <33> 1. A method for forming a silicon oxide or carbon-doped silicon oxide film on a substrate, comprising the steps of: Formulas A to E below: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; introducing at least one oxygen-containing source into the reactor, wherein the at least one oxygen-containing source reacts with the organoaminosilane to provide the film on the substrate; A method comprising: <34> 1. A method for forming a silicon oxide or carbon doped silicon oxide film on a substrate, the film comprising a thickness, the method comprising: a. The following formulas A to E: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; b. chemically adsorbing the at least one organoaminosilane precursor onto the substrate; c. driving off the unreacted at least one organoaminosilane precursor using a purge gas; d. providing an oxygen-containing source to the organoaminosilane precursor on the heated substrate to react with the adsorbed at least one organoaminosilane precursor; e. optionally driving off any unreacted oxygen-containing source; A method comprising: <35> Steps a.-d. and optional step e. are repeated until the thickness of the membrane is established; <34> The method described above. <36> The at least one organoaminosilane precursor may be selected from the group consisting of 1-dimethylamino-1,4-disilabutane, 1-diethylamino-1,4-disilabutane, 1-ethylmethylamino-1,4-disilabutane, 1-diisopropylamino-1,4-disilabutane, 1-di-sec-butylamino-1,4-disilabutane, 1-phenylmethylamino-1,4-disilabutane, 2,6-dimethylpiperidino-1,4-disilabutane, and phenylethylamino-1,4-disilabutane. , 1-dimethylamino-1,3-disilapropane, 1-diethylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropane, diisopropylamino-1,3-disilapropane, 1-di-sec-butylamino-1,3-disilapropane, 1-phenylmethylamino-1,3-disilapropane, 2,6-dimethylpiperidino-1,3-disilapropane, and phenylethylamino-1,3-disilapropane; <34> The method described above. <37> The chemical adsorption step is carried out at a temperature of 200° C. or less. <34> The method described above. <38> The chemical adsorption step is carried out at a temperature of 100° C. or less. <34> The method described above. <39> The chemical adsorption step is carried out at a temperature of 50° C. or less. <34> The method described above. <40> The atomic layer deposition process <34> The method described above. <41> A plasma enhanced cyclic chemical vapor deposition process. <34> The method described above. <42> 1. A method for forming a silicon-containing film using a deposition method selected from ALD or cyclic CVD comprising the steps of: a. placing the substrate in a reactor heated to one or more temperatures ranging from about ambient temperature to about 700° C.; b. Formulas A-E below: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; c. optionally using a purge gas to purge away any unreacted at least one organoaminosilane precursor; d. providing a reducing agent in said reactor to at least partially react with the absorbed organoaminosilane; e. optionally driving off any unreacted reducing agent; Including, The method wherein steps b to e are repeated until a desired thickness is obtained. <43> The reducing agent is at least one selected from the group consisting of hydrogen, hydrogen plasma, and hydrogen chloride; <42> How to. <44> 1. A method for depositing an amorphous or crystalline silicon film via a deposition process selected from atomic layer deposition, cyclic chemical vapor deposition process, and chemical vapor deposition, the method comprising: a. providing a substrate in a reactor; b. Formulas A-E below: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom; c. purging the reactor with a purge gas or pumping the reactor; Each step of the process is included. Steps b to c are repeated until a desired thickness is obtained. <45> The at least one organoaminosilane precursor may be selected from the group consisting of 1-dimethylamino-1,4-disilabutane, 1-diethylamino-1,4-disilabutane, 1-ethylmethylamino-1,4-disilabutane, 1-diisopropylamino-1,4-disilabutane, 1-di-sec-butylamino-1,4-disilabutane, 1-phenylmethylamino-1,4-disilabutane, 2,6-dimethylpiperidino-1,4-disilabutane, and phenylethylamino-1,4-disilabutane. , 1-dimethylamino-1,3-disilapropane, 1-diethylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropane, diisopropylamino-1,3-disilapropane, 1-di-sec-butylamino-1,3-disilapropane, 1-phenylmethylamino-1,3-disilapropane, 2,6-dimethylpiperidino-1,3-disilapropane, and phenylethylamino-1,3-disilapropane; <44> The method described above. <46> 1. A method for forming a silicon-containing film on at least one surface of a substrate using a deposition process selected from a plasma-enhanced atomic layer deposition (PEALD) process and a plasma-enhanced cyclic chemical vapor deposition (PECCVD) process, the method comprising: a. providing a substrate in an ALD reactor; b. Formulas A-E below: [ka] (In the formula, R 1 is a straight or branched C1-C10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with two silicon atoms and at least one nitrogen atom into the ALD reactor; c. purging the ALD reactor with an inert gas; d. providing a plasma source in the ALD reactor; e. purging the ALD reactor with an inert gas; Including, The method wherein steps b through e are repeated until a silicon-containing film of a desired thickness is obtained. <47> The at least one organoaminosilane precursor may be selected from the group consisting of 1-dimethylamino-1,4-disilabutane, 1-diethylamino-1,4-disilabutane, 1-ethylmethylamino-1,4-disilabutane, 1-diisopropylamino-1,4-disilabutane, 1-di-sec-butylamino-1,4-disilabutane, 1-phenylmethylamino-1,4-disilabutane, 2,6-dimethylpiperidino-1,4-disilabutane, and phenylethylamino-1,4-disilabutane. , 1-dimethylamino-1,3-disilapropane, 1-diethylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropane, diisopropylamino-1,3-disilapropane, 1-di-sec-butylamino-1,3-disilapropane, 1-phenylmethylamino-1,3-disilapropane, 2,6-dimethylpiperidino-1,3-disilapropane, and phenylethylamino-1,3-disilapropane; <46> The method described above. <48> the plasma source is selected from the group consisting of hydrogen plasma, hydrogen / argon plasma, argon plasma, helium plasma, hydrogen / helium plasma, neon plasma, hydrogen / neon plasma, xenon plasma, hydrogen / xenon plasma, and mixtures thereof; <46> The method described above. <49> the silicon-containing film is selected from the group consisting of silicon carbonitride, silicon carbide, silicon nitride, silicon carbonitride, and silicon carboxynitride; <46> The method described above. <50> 1. A container used to deliver precursors for deposition of a silicon-containing film, the container comprising: Formulas A to E below: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C10 aryl group, R 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are independently linear or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 wherein, together with the two silicon atoms and at least one nitrogen atom, a ring selected from a four-membered ring, a five-membered ring, or a six-membered ring is formed; The precursor has a purity of about 98% or greater. <51> The container is made of stainless steel. <50> A container as described in claim 1. <52> Formulas A to E below: [ka] (In the formula, R 1 is a straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 2is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R 3 and R 4 are each independently a straight or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 heteroarylene groups, n in formula A is equal to 1 or 2, m in formula A is equal to 0, 1, 2, or 3, p and q in formula E are equal to 1 or 2, and optionally R in formula D is selected from the group consisting of 3 forming a ring selected from a 4-membered ring, a 5-membered ring, or a 6-membered ring together with the two silicon atoms and at least one nitrogen atom, The method comprises: R 1 R 2 NH and R 1 NH2 (wherein R 1 Straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10 aryl group, R in the amine 2 is hydrogen, straight or branched C1-C 10 Alkyl groups, linear or branched, C3-C 10 Alkenyl groups, linear or branched, C3-C 10 Alkynyl groups, C3-C 10 Cyclic alkyl groups and C5-C 10an amine having a formula selected from [ka] (Wherein, R in the silicon source 3 and R 4 are independently linear or branched C1-C 10 Alkylene group, linear or branched C3-C6 alkenylene group, linear or branched C3-C6 alkynylene group, C3-C 10 Cyclic alkylene group, C3-C 10 Heterocyclic alkylene groups, C5-C 10 Arylene groups, and C5-C 10 a silicon source comprising at least one compound selected from the group consisting of a heteroarylene group, reacting at least a portion of said silicon source with at least a portion of said amine in the presence of a catalyst under reaction conditions sufficient to provide said organoaminosilane.

Claims

1. 1. A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; Formula E below: 【Chemistry 1】 (In the formula, R １ is a straight or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ２ is hydrogen, linear or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ３ and R ４ are each independently a straight or branched C １ ~C １０ Alkylene group, linear or branched C ３ ~C ６ Alkenylene group, linear or branched C ３ ~C ６ Alkynylene group, C ３ ~C １０ Cyclic alkylene group, C ３ ~C １０ Heterocyclic alkylene group, C ５ ~C １０ Arylene groups, and C ５ ~C １０ wherein p and q are selected from the group consisting of heteroarylene groups, p and q are equal to 1 or 2; introducing a nitrogen-containing source into the reactor, wherein the at least one organoaminosilane precursor and the nitrogen-containing source react to form a film on the at least one surface; A method comprising:

2. 2. The method of claim 1, wherein the nitrogen-containing source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen / hydrogen, ammonia plasma, nitrogen plasma, nitrogen / argon plasma, nitrogen / helium plasma, nitrogen / hydrogen plasma, organic amines, organic amine plasma, and mixtures thereof.

3. 3. The method of claim 1 or 2, wherein the silicon-containing film is selected from the group consisting of silicon nitride and silicon carbonitride.

4. 1. A method for producing a silicon-containing film via an atomic layer deposition (ALD) process, the method comprising: a. providing a substrate in an ALD reactor; b. In said ALD reactor, a compound of formula E: 【Chemistry 2】 (In the formula R １ is a straight or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ２ is hydrogen, linear or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ３ and R ４ are each independently a straight or branched C １ ~C １０ Alkylene group, linear or branched C ３ ~C ６ Alkenylene group, linear or branched C ３ ~C ６ Alkynylene group, C ３ ~C １０ Cyclic alkylene group, C ３ ~C １０ Heterocyclic alkylene group, C ５ ~C １０ Arylene groups, and C ５ ~C １０ wherein p and q are selected from the group consisting of heteroarylene groups, p and q being equal to 1 or 2; c. purging the ALD reactor with an inert gas; d. providing a nitrogen-containing source in the ALD reactor; e. purging the ALD reactor with an inert gas; and steps b through e are repeated until a desired thickness of the film is obtained.

5. 5. The method of claim 4, wherein the nitrogen-containing source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen / hydrogen, ammonia plasma, nitrogen plasma, nitrogen / argon plasma, nitrogen / helium plasma, nitrogen / hydrogen plasma, organic amines, organic amine plasma, and mixtures thereof.

6. 6. The method of claim 4 or 5, wherein the silicon-containing film is selected from the group consisting of silicon nitride and silicon carbonitride.

7. A method for forming a silicon-containing film on at least one surface of a substrate using an atomic layer deposition (ALD) process, the method comprising: a. providing a substrate in an ALD reactor; b. In said ALD reactor, a compound of formula E: 【Chemistry 3】 (In the formula, R １ is a straight or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ２ is hydrogen, linear or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ３ and R ４ are each independently a straight or branched C １ ~C １０ Alkylene group, linear or branched C ３ ~C ６ Alkenylene group, linear or branched C ３ ~C ６ Alkynylene group, C ３ ~C １０ Cyclic alkylene group, C ３ ~C １０ Heterocyclic alkylene group, C ５ ~C １０ Arylene groups, and C ５ ~C １０ wherein p and q are selected from the group consisting of heteroarylene groups, p and q being equal to 1 or 2; c. purging the ALD reactor with an inert gas; d. providing a plasma nitrogen-containing source in the ALD reactor; e. purging the ALD reactor with an inert gas; and steps b through e are repeated until a desired thickness of the film is obtained.

8. 8. The method of claim 7, wherein the nitrogen-containing source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen / hydrogen, ammonia plasma, nitrogen plasma, nitrogen / argon plasma, nitrogen / helium plasma, nitrogen / hydrogen plasma, organic amines, organic amine plasma, and mixtures thereof.

9. 9. The method of claim 7 or 8, wherein the silicon-containing film is selected from the group consisting of silicon nitride and silicon carbonitride.

10. A method for forming a silicon oxide or carbon-doped silicon oxide film on a substrate, comprising: 【Chemistry 4】 (In the formula, R １ is a straight or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ２ is hydrogen, linear or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ３ and R ４ are each independently a straight or branched C １ ~C １０ Alkylene group, linear or branched C ３ ~C ６ Alkenylene group, linear or branched C ３ ~C ６ Alkynylene group, C ３ ~C １０ Cyclic alkylene group, C ３ ~C １０ Heterocyclic alkylene group, C ５ ~C １０ Arylene groups, and C ５ ~C １０ wherein p and q are selected from the group consisting of heteroarylene groups, and p and q are equal to 1 or 2.) to form the film on the substrate.

11. 11. The method of claim 10, wherein the deposition is at least one selected from the group including at least one selected from chemical vapor deposition, low pressure deposition, plasma enhanced chemical vapor deposition, cyclic chemical vapor deposition, plasma enhanced cyclic chemical vapor deposition, atomic layer deposition, and plasma enhanced atomic layer deposition.

12. 12. The method of claim 10 or 11, wherein the reacting step is carried out at a temperature of 200° C. or less.

13. 12. The method of claim 10 or 11, wherein the reacting step is carried out at a temperature of 100° C. or less.

14. 12. The method of claim 10 or 11, wherein the reacting step is carried out at a temperature of 50° C. or less.

15. 1. A method for forming a silicon oxide or carbon-doped silicon oxide film on a substrate, comprising the steps of: Formula E below: 【Chemistry 5】 (In the formula, R １ is a straight or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ２ is hydrogen, linear or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ３ and R ４ are each independently a straight or branched C １ ~C １０ Alkylene group, linear or branched C ３ ~C ６ Alkenylene group, linear or branched C ３ ~C ６ Alkynylene group, C ３ ~C １０ Cyclic alkylene group, C ３ ~C １０ Heterocyclic alkylene group, C ５ ~C １０ Arylene groups, and C ５ ~C １０ and p and q are selected from the group consisting of heteroarylene groups, p and q being equal to 1 or 2; and forming the film on the substrate via vapor deposition from a composition comprising at least one organoaminosilane precursor comprising a compound represented by one of the following formulas: and at least one oxygen-containing source; The method, wherein the deposition is at least one selected from chemical vapor deposition, low pressure deposition, plasma enhanced chemical vapor deposition, cyclic chemical vapor deposition, plasma enhanced cyclic chemical vapor deposition, atomic layer deposition, and plasma enhanced atomic layer deposition.

16. 16. The method of claim 15, wherein the reacting step is carried out at a temperature of 200° C. or less.

17. 16. The method of claim 15, wherein the reacting step is carried out at a temperature of 100° C. or less.

18. 16. The method of claim 15, wherein the reacting step is carried out at a temperature of 50° C. or less.

19. 1. A method for forming a silicon oxide or carbon-doped silicon oxide film on a substrate, comprising the steps of: Formula E below: 【Chemistry 6】 (In the formula, R １ is a straight or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ２ is hydrogen, linear or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ３ and R ４ are each independently a straight or branched C １ ~C １０ Alkylene group, linear or branched C ３ ~C ６ Alkenylene group, linear or branched C ３ ~C ６ Alkynylene group, C ３ ~C １０ Cyclic alkylene group, C ３ ~C １０ Heterocyclic alkylene group, C ５ ~C １０ Arylene groups, and C ５ ~C １０ wherein p and q are selected from the group consisting of heteroarylene groups, p and q are equal to 1 or 2; introducing at least one oxygen-containing source into the reactor, wherein the at least one oxygen-containing source reacts with the organoaminosilane to provide the film on the substrate; A method comprising:

20. 1. A method for forming a silicon oxide or carbon doped silicon oxide film on a substrate, the film comprising a thickness, the method comprising: a. The following formula E: 【Chemistry 7】 (In the formula, R １ is a straight or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ２ is hydrogen, linear or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ３ and R ４ are each independently a straight or branched C １ ~C １０ Alkylene group, linear or branched C ３ ~C ６ Alkenylene group, linear or branched C ３ ~C ６ Alkynylene group, C ３ ~C １０ Cyclic alkylene group, C ３ ~C １０ Heterocyclic alkylene group, C ５ ~C １０ Arylene groups, and C ５ ~C １０ wherein p and q are selected from the group consisting of heteroarylene groups, p and q are equal to 1 or 2; b. chemically adsorbing the at least one organoaminosilane precursor onto the substrate; c. using a purge gas to drive off the unreacted at least one organoaminosilane precursor; d. providing an oxygen-containing source to the organoalumina precursor on the heated substrate to react with the adsorbed at least one organoalumina precursor; e. Optionally, driving off any unreacted oxygen-containing source; A method comprising:

21. 21. The method of claim 20, wherein steps a.-d. and optional step e. are repeated until the thickness of the membrane is established.

22. 22. The method of claim 20 or 21, wherein the chemically adsorbing step is carried out at a temperature of 200° C. or less.

23. 22. The method of claim 20 or 21, wherein the chemically adsorbing step is carried out at a temperature below 100°C.

24. 22. The method of claim 20 or 21, wherein the chemically adsorbing step is carried out at a temperature of 50° C. or less.

25. The method of any one of claims 20 to 24, which is an atomic layer deposition process.

26. The method of any one of claims 20 to 24, which is a plasma enhanced cyclic chemical vapor deposition process.

27. 1. A method for forming a silicon-containing film using a deposition method selected from ALD or cyclic CVD comprising the steps of: a. placing the substrate in a reactor heated to one or more temperatures ranging from ambient temperature to 700° C.; b) Formula E: 【Chemistry 8】 (In the formula, R １ is a straight or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ２ is hydrogen, linear or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ３ and R ４ are each independently a straight or branched C １ ~C １０ Alkylene group, linear or branched C ３ ~C ６ Alkenylene group, linear or branched C ３ ~C ６ Alkynylene group, C ３ ~C １０ Cyclic alkylene group, C ３ ~C １０ Heterocyclic alkylene group, C ５ ~C １０ Arylene groups, and C ５ ~C １０ wherein p and q are selected from the group consisting of heteroarylene groups, p and q are equal to 1 or 2; c. optionally using a purge gas to purge away any unreacted at least one organoaminosilane precursor; d. providing a reducing agent in the reactor to at least partially react with the absorbed organoaminosilane; e. Optionally, driving off any unreacted reducing agent; Including, The method wherein steps b through e are repeated until a desired thickness is obtained.

28. 28. The method of claim 27, wherein the reducing agent is at least one selected from the group consisting of hydrogen, hydrogen plasma, or hydrogen chloride.

29. 1. A method for depositing an amorphous or crystalline silicon film via a deposition process selected from atomic layer deposition, cyclic chemical vapor deposition process, and chemical vapor deposition, the method comprising: a. providing a substrate in a reactor; b) Formula E: 【Chemistry 9】 (In the formula, R １ is a straight or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ２ is hydrogen, linear or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ３ and R ４ are each independently a straight or branched C １ ~C １０ Alkylene group, linear or branched C ３ ~C ６ Alkenylene group, linear or branched C ３ ~C ６ Alkynylene group, C ３ ~C １０ Cyclic alkylene group, C ３ ~C １０ Heterocyclic alkylene group, C ５ ~C １０ Arylene groups, and C ５ ~C １０ wherein p and q are selected from the group consisting of heteroarylene groups, p and q are equal to 1 or 2; c. purging the reactor with a purge gas or pumping the reactor; Each step of the process is included. Steps b-c are repeated until a desired thickness is obtained.

30. A method for forming a silicon-containing film on at least one surface of a substrate using an atomic layer deposition (ALD) process, the method comprising: a. providing a substrate in an ALD reactor; b) Formula E: 【Chemistry 10】 (In the formula, R １ is a straight or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ２ is hydrogen, linear or branched C １ ~C １０ Alkyl group, linear or branched C ３ ~C １０ Alkenyl group, linear or branched C ３ ~C １０ Alkynyl group, C ３ ~C １０ Cyclic alkyl groups, and C ５ ~C １０ aryl group, R ３ and R ４ are each independently a straight or branched C １ ~C １０ Alkylene group, linear or branched C ３ ~C ６ Alkenylene group, linear or branched C ３ ~C ６ Alkynylene group, C ３ ~C １０ Cyclic alkylene group, C ３ ~C １０ Heterocyclic alkylene group, C ５ ~C １０ Arylene groups, and C ５ ~C １０ wherein p and q are selected from the group consisting of heteroarylene groups, p and q are equal to 1 or 2; c. purging the ALD reactor with an inert gas; d. providing a plasma source in the ALD reactor; e. purging the ALD reactor with an inert gas; Including, The method wherein steps b through e are repeated until a silicon-containing film of a desired thickness is obtained.

31. 31. The method of claim 30, wherein the plasma source is selected from the group consisting of hydrogen plasma, hydrogen / argon plasma, argon plasma, helium plasma, hydrogen / helium plasma, neon plasma, hydrogen / neon plasma, xenon plasma, hydrogen / xenon plasma, and mixtures thereof.

32. 32. The method of claim 30 or 31, wherein the silicon-containing film is selected from the group consisting of silicon carbonitride, silicon carbide, silicon nitride, silicon carbonitride, and silicon carboxynitride.

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