Semiconductor Module

Abstract

Provided is a semiconductor module comprising: a first switching element which is reverse conducting and is provided to one of an upper arm and a lower arm; a second switching element which is reverse conducting and is provided to the other one of the upper arm and the lower arm; a first passage member which is electrically connected to one of a gate electrode and an emitter electrode of the first switching element; and a second passage member which is electrically connected to the other one of the gate electrode and the emitter electrode of the first switching element. The first passage member is disposed in proximity to the second switching element compared to the second passage member. The current flowing to the first passage member flows antiparallel to a reverse recovery current of the arm to which the second switching element is provided.

Description

[Technical field]

[0001] The present invention relates to a semiconductor module. [Background technology]

[0002] 2. Description of the Related Art Semiconductor modules equipped with switching elements are known (see, for example, Patent Documents 1 to 3). Patent Document 1: International Publication No. 2017 / 199580 Patent Document 2: JP 2011-188540 A Patent Document 3: JP 2020-98921 A Problem to be Solved

[0003] It is preferable to reduce the turn-on losses.

[0004] In a first aspect of the present invention, there is provided a semiconductor module comprising: a first reverse conducting switching element provided in one of the upper arm or the lower arm; a second reverse conducting switching element provided in the other of the upper arm or the lower arm; a first path member electrically connected to one of a gate electrode or an emitter electrode of the first switching element; and a second path member electrically connected to the other of the gate electrode or the emitter electrode of the first switching element, the first path member being provided closer to the second switching element than the second path member, and a current flowing in the first path member flowing anti-parallel to a reverse recovery current of the arm in which the second switching element is provided.

[0005] half The first path member of the conductor module may be a gate wiring member electrically connected to the gate electrode of the first switching element, and the second path member may be an auxiliary emitter wiring member electrically connected to the emitter electrode of the first switching element.

[0006] In any of the semiconductor modules described above, the first path member may be an auxiliary emitter wiring member electrically connected to an emitter electrode of the first switching element, and the second path member may be a gate wiring member electrically connected to a gate electrode of the first switching element.

[0007] In any of the semiconductor modules described above, the first path member and the second path member may include a conductive circuit plate. The circuit plate of the first path member may be provided between the circuit plate of the second path member and the second switching element in a top view.

[0008] In any of the semiconductor modules described above, the first path member may include a conductive circuit board. The second path member may include a conductive wire member. The circuit board of the first path member may be disposed closer to the second switching element than the wire member of the second path member.

[0009] In any of the above semiconductor modules, the semiconductor module may include a gate external terminal electrically connected to the gate electrode of the first switching element via the first path member or the second path member. The semiconductor module may include an auxiliary emitter external terminal electrically connected to the emitter electrode of the first switching element via the first path member or the second path member. The gate external terminal may be provided closer to the second switching element than the auxiliary emitter external terminal.

[0010] In any of the above semiconductor modules, the semiconductor module may include a gate external terminal electrically connected to the gate electrode of the first switching element via the first path member or the second path member. The semiconductor module may include an auxiliary emitter external terminal electrically connected to the emitter electrode of the first switching element via the first path member or the second path member. The gate external terminal may be provided farther away from the second switching element than the auxiliary emitter external terminal.

[0011] In any of the above semiconductor modules, the semiconductor module may include an output terminal provided on a predetermined side of the semiconductor module. The gate external terminal and the auxiliary emitter external terminal may be provided on a side opposite to the side on which the output terminal is provided.

[0012] In any of the above semiconductor modules, the semiconductor module may include a positive electrode terminal and a negative electrode terminal provided on a predetermined side of the semiconductor module. The positive electrode terminal and the negative electrode terminal may be provided on a side perpendicular to the side on which the gate external terminal and the auxiliary emitter external terminal are provided.

[0013] In any of the semiconductor modules described above, the first switching element and the second switching element may each be formed by a single chip.

[0014] In any of the above semiconductor modules, the first switching element and the second switching element may be either an RC-IGBT, an element integrating a SiC-MOS and a SiC-SBD, or an element in which the body diode of a SiC-MOS functions as a freewheeling diode.

[0015] In any of the semiconductor modules described above, the gate wiring member electrically connected to the gate electrode of the first switching element may be longer than the gate wiring member electrically connected to the gate electrode of the second switching element.

[0016] In any of the semiconductor modules described above, the auxiliary emitter wiring member electrically connected to the emitter electrode of the first switching element may be longer than the auxiliary emitter wiring member electrically connected to the emitter electrode of the second switching element.

[0017] In any of the above semiconductor modules, the semiconductor module may include a plurality of legs each formed of an upper arm and a lower arm. The semiconductor module may include a plurality of laminated substrates for arranging the plurality of legs. The plurality of legs may be arranged on the plurality of laminated substrates, respectively.

[0018] In any of the above semiconductor modules, the semiconductor module may include a plurality of legs each formed of an upper arm and a lower arm. The semiconductor module may include a laminated substrate for arranging the plurality of legs. The plurality of legs may be arranged on a common laminated substrate.

[0019] The above summary of the invention does not list all of the features of the present invention. Also, subcombinations of these features may also be inventions. [Brief description of the drawings]

[0020] [Figure 1A] 1 shows an outline of the configuration of a semiconductor module 100. [Figure 1B] An example of a cross section of the semiconductor assembly 102 taken along the line aa' is shown. [Figure 1C] 1 is an example of an enlarged view of the semiconductor assembly 102. [Figure 1D] 1 shows the relationship between the gate current Ig flowing through the gate wiring member 12 and the reverse recovery current Irr. [Figure 1E] 1 is a main circuit diagram of a semiconductor module 100 according to an embodiment. [Figure 2A] 2 shows an example of the configuration of a semiconductor module 500 according to a comparative example. [Figure 2B] 1 shows the relationship between the auxiliary emitter current Ie flowing through the auxiliary emitter wiring member 514 and the reverse recovery current Irr. [Diagram 3] 2 shows current-voltage characteristics during switching of the semiconductor module 100. [Figure 4A] 4 is a circuit diagram showing an on-state of a switching element 10 arranged in the upper arm at time T1 in FIG. 3. FIG. [Figure 4B] 4 is a circuit diagram showing an off state of a switching element 10 arranged in the upper arm at time T2 in FIG. 3. FIG. [Figure 4C] 4 is a circuit diagram showing an on-state of a switching element 10 arranged in the upper arm at time T3 in FIG. 3. FIG. [Figure 5A] 4 is a circuit diagram showing an on-state of a switching element 10 arranged in the lower arm at time T1 in FIG. 3. FIG. [Figure 5B] 4 is a circuit diagram showing an off state of a switching element 10 arranged in the lower arm at time T2 in FIG. 3. FIG. [Figure 5C] 4 is a circuit diagram showing an on-state of a switching element 10 arranged in the lower arm at time T3 in FIG. 3. FIG. [Figure 6A] 1 shows the switching characteristics of a semiconductor module 500 as a comparative example. [Figure 6B] 2 shows the switching characteristics of the semiconductor module 100 according to the embodiment. [Figure 7] 1 shows a modified example of the configuration of the semiconductor module 100. [Figure 8A] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 8B] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 8C] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 8D] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 8E] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 8F] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 8G] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 9A] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 9B] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 9C] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 9D] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 9E] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 9F] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 9G] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 9H] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 10A] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 10B] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 10C] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 10D] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 10E] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 10F] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 10G] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 10H] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 11A] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 11B] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 11C] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 11D] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 11E] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 11F] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 11G] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. [Figure 11H] FIG. 2 is an enlarged view of a modified example of the semiconductor assembly 102. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] The present invention will be described below through embodiments of the invention, but the following embodiments do not limit the scope of the invention according to the claims. Furthermore, not all of the combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0022] 1A shows an outline of the configuration of a semiconductor module 100. The semiconductor module 100 includes a plurality of semiconductor assemblies 102. The semiconductor module 100 of this example includes three semiconductor assemblies 102a to 102c, but is not limited to this.

[0023] The semiconductor module 100 may be applied to a power conversion device such as a power module that configures an inverter circuit. For example, when the semiconductor module 100 configures a three-phase inverter circuit, the semiconductor assemblies 102a to 102c may correspond to the U-phase, V-phase, and W-phase of the three-phase inverter circuit, respectively.

[0024] The semiconductor assembly 102 includes a switching element 10, a switching element 20, and a laminated substrate 150. The semiconductor assembly 102 is housed in a housing 104 of a semiconductor module 100. The semiconductor assembly 102 may be sealed in the housing 104 by any sealing resin material.

[0025] The switching element 10 and the switching element 20 are reverse-conducting switching elements arranged on the laminated substrate 150. The reverse-conducting switching element is a switching element configured with a transistor that passes current in antiparallel and a freewheeling diode. The switching element 10 and the switching element 20 may each be configured with a single chip. For example, the switching element 10 and the switching element 20 are RC-IGBTs (Reverse-Conducting IGBTs) including an insulated gate bipolar transistor (IGBT) and a freewheeling diode (FWD). The switching element 10 and the switching element 20 may be elements that integrate a SiC-MOS and a SiC-SBD, or may be elements in which the body diode of the SiC-MOS functions as a freewheeling diode.

[0026] The switching element 10 is a reverse-conducting switching element provided in one of the upper arm and the lower arm. The switching element 20 is a reverse-conducting switching element provided in the other of the upper arm and the lower arm. In this example, the switching element 10 is arranged in the upper arm and the switching element 20 is arranged in the lower arm, but the switching element 10 may be arranged in the lower arm and the switching element 20 may be arranged in the upper arm.

[0027] The laminated substrate 150 has the switching element 10 and the switching element 20 mounted thereon. The laminated substrate 150 may be a DCB (Direct Copper Bonding) substrate or an AMB (Active Metal Brazing) substrate. In this example, the main surface of the laminated substrate 150 is the XY plane. The semiconductor module 100 in this example includes three laminated substrates 150a to 150c arranged in the Y-axis direction, but the number and arrangement of the laminated substrates 150 are not limited to this.

[0028] The semiconductor module 100 includes a plurality of legs, each of which is composed of an upper arm and a lower arm. The plurality of legs are disposed on a multilayer substrate 150a, a multilayer substrate 150b, and a multilayer substrate 150c, respectively. The plurality of legs may be mounted on a common multilayer substrate 150.

[0029] 1B shows an example of an aa' cross section of the semiconductor assembly 102. The laminated substrate 150 includes an insulating plate 151, a circuit board 152, and a metal plate 153.

[0030] The insulating plate 151 has a given thickness in the Z-axis direction and is made of a flat insulating material having an upper surface and a lower surface. 2 O 3 ), aluminum nitride (AlN), silicon nitride (Si 3 N 4The insulating plate 151 may be made of a resin material such as epoxy, or an epoxy resin material using a ceramic material as a filler.

[0031] The circuit board 152 has an arbitrary thickness in the Z-axis direction and is a conductive member provided on the upper surface of the insulating plate 151. The metal plate 153 has an arbitrary thickness in the Z-axis direction and is a conductive member provided on the lower surface of the insulating plate 151. The circuit board 152 and the metal plate 153 may be formed of a plate containing a metal material such as copper or a copper alloy. The circuit board 152 and the metal plate 153 may be fixed to the insulating plate 151 by solder, brazing, or the like. The metal plate 153 may be formed of a thermally conductive material such as copper or aluminum, and may function as a heat sink.

[0032] First circuit board 11 and second circuit board 21 are one example of circuit board 152 provided on the upper surface of insulating plate 151. First circuit board 11 and second circuit board 21 will be described later.

[0033] 1C is an example of an enlarged view of the semiconductor assembly 102. The semiconductor module 100 may include a plurality of semiconductor assemblies 102 having the same configuration as this example.

[0034] The gate wiring member 12 is electrically connected to the gate electrode 17 of the switching element 10. A gate current Ig flows through the gate wiring member 12 from the gate external terminal 112 to the switching element 10. The gate wiring member 12 may be formed by combining a circuit board 152 and a wire member.

[0035] The gate wiring member 12 of this example includes a gate control wire Wg1, a gate circuit board Cg1, and a gate control wire Wg3. The gate control wire Wg1 is a wire member for connecting between the gate electrode 17 and the gate circuit board Cg1. The gate circuit board Cg1 is an example of a circuit board 152 for passing a gate current Ig to the switching element 10. The gate circuit board Cg1 of this example has a substantially U-shaped shape, but is not limited to this. The gate control wire Wg3 is a wire member for connecting between the gate external terminal 112 and the gate circuit board Cg1.

[0036] The auxiliary emitter wiring member 14 is electrically connected to the emitter electrode 19 of the switching element 10. An auxiliary emitter current Ie flows through the auxiliary emitter wiring member 14 from the switching element 10 to the auxiliary emitter external terminal 114. The auxiliary emitter current Ie is a current that returns from the switching element 10 to the control terminal in response to a gate current Ig flowing from the control terminal to the switching element 10. The auxiliary emitter wiring member 14 may be formed by a combination of a circuit board 152 and a wire member.

[0037] The auxiliary emitter wiring member 14 of this example includes an auxiliary emitter control wire We1, an auxiliary emitter circuit board Ce1, and an auxiliary emitter control wire We3. The auxiliary emitter control wire We1 is a wire member for connecting between the emitter electrode 19 and the auxiliary emitter circuit board Ce1. The auxiliary emitter circuit board Ce1 is a wire member for connecting between the switching element 10 and the auxiliary emitter control wire We3. Emitter current Ie This is an example of a circuit board 152 for passing the auxiliary emitter circuit board Ce1. The auxiliary emitter circuit board Ce1 of this example has an I-shape extending in the X-axis direction. The auxiliary emitter control wire We3 is a wire member for connecting between the auxiliary emitter external terminal 114 and the auxiliary emitter circuit board Ce1.

[0038] Here, the gate wiring member 12 is either the first path member or the second path member. The auxiliary emitter wiring member 14 is the other of the first path member and the second path member. The first path member is a member electrically connected to one of the gate electrode 17 or the emitter electrode 19 of the switching element 10. The second path member is a member electrically connected to the other of the gate electrode 17 or the emitter electrode 19 of the switching element 10. The first path member is provided closer to the switching element 20 than the second path member. The current flowing through the first path member flows anti-parallel to the reverse recovery current Irr of the arm in which the switching element 20 is provided. Note that the current flowing anti-parallel does not only mean the case where the current flows in a completely opposite direction, but also means a relationship that generates a mutual induction current Im1 that strengthens the current flowing through the first path member, as described later. The first path member and the second path member may be configured by a combination of a circuit board 152 and a wire member. Whether the gate wiring member 12 or the auxiliary emitter wiring member 14 functions as the first path member or the second path member can vary depending on the arrangement of each member in the semiconductor module 100.

[0039] The reverse recovery current Irr is a current that flows through the switching element 20 when the switching element 10 of the opposing arm is on. The direction in which the reverse recovery current Irr flows is determined depending on the arrangement of the switching element 20, etc. In this example, the reverse recovery current Irr flows in the negative direction of the X-axis.

[0040] The gate wiring member 12 of this example is disposed so that a current flows antiparallel to the reverse recovery current Irr of the arm in which the switching element 20 is provided. The gate wiring member 12 is provided closer to the switching element 20 than the auxiliary emitter wiring member 14. That is, the gate wiring member 12 of this example functions as a first path member. The gate wiring member 12 of this example is provided between the auxiliary emitter wiring member 14 and the switching element 20 on the insulating plate 151. More specifically, the gate circuit board Cg1 is provided between the auxiliary emitter circuit board Ce1 and the switching element 20 in a top view. However, the gate wiring member 12 may be provided farther away from the switching element 20 than the auxiliary emitter wiring member 14, depending on the direction of the reverse recovery current Irr. The gate wiring member 12 and the auxiliary emitter wiring member 14 of this example have a circuit board 152.

[0041] The first circuit board 11 is a circuit board 152 on which the switching element 10 is mounted. The first circuit board 11 is electrically connected to the back electrode of the switching element 10 using a conductive fixing member such as solder. The first circuit board 11 may be electrically connected to the positive terminal 132. The second circuit board 21 is a circuit board 152 on which the switching element 20 is mounted. The second circuit board 21 is electrically connected to the back electrode of the switching element 20 using a conductive fixing member such as solder.

[0042] The output terminal 110 is an external terminal for electrically connecting to a load provided outside the semiconductor module 100. The output terminal 110 is provided on a predetermined side of the semiconductor module 100. In this example, the output terminal 110 is provided on a side extending in the Y-axis direction on the positive side in the X-axis direction of the semiconductor module 100. The position of the output terminal 110 is not limited to this.

[0043] The gate external terminal 112, the auxiliary emitter external terminal 114, the gate external terminal 122, and the auxiliary emitter external terminal 124 are examples of control terminals for controlling the operation of the semiconductor module 100. The control terminals in this example are provided on a side opposite to the side on which the output terminal 110 is provided. The control terminals in this example are provided on a side extending in the Y-axis direction on the negative side of the semiconductor module 100 in the X-axis direction.

[0044] The gate external terminal 112 is electrically connected to the gate electrode 17 of the switching element 10 via the gate wiring member 12. The gate external terminal 112 in this example is electrically connected to the gate electrode 17 via a gate control wire Wg1, a gate circuit board Cg1, and a gate control wire Wg3.

[0045] The auxiliary emitter external terminal 114 is electrically connected to the emitter electrode 19 of the switching element 10 via the auxiliary emitter wiring member 14. The auxiliary emitter external terminal 114 in this example is electrically connected to the emitter electrode 19 via the auxiliary emitter control wire We1, the auxiliary emitter circuit board Ce1, and the auxiliary emitter control wire We3.

[0046] The gate external terminal 122 is electrically connected to the gate electrode 27 of the switching element 20. In this example, the gate external terminal 122 is electrically connected to the gate electrode 27 via the gate control wire Wg2, the third circuit plate 31, and the gate control wire Wg4.

[0047] The auxiliary emitter external terminal 124 is electrically connected to the emitter electrode 29 of the switching element 20. In this example, the auxiliary emitter external terminal 124 is electrically connected to the emitter electrode 29 via the main current wire W2, the fourth circuit board 41, and the auxiliary emitter control wire We4.

[0048] The gate external terminal 112 in this example is provided farther away from the switching element 20 than the auxiliary emitter external terminal 114. That is, the gate external terminal 112 is provided on the positive side in the Y-axis direction than the auxiliary emitter external terminal 114. However, the arrangement of each terminal of the control terminal is not limited to this example. The control terminals in this example are arranged in the order of the gate external terminal 112, the auxiliary emitter external terminal 114, the gate external terminal 122, and the auxiliary emitter external terminal 124 toward the negative side in the Y-axis direction. That is, the gate and emitter of the control terminal in this example are arranged in the order of GEGE (here, G is the gate and E is the emitter).

[0049] The third circuit plate 31 is electrically connected to the gate electrode 27 of the switching element 20 by a gate control wire Wg2. The third circuit plate 31 is electrically connected to the gate external terminal 122 by a gate control wire Wg4.

[0050] The fourth circuit board 41 is electrically connected to the emitter electrode 29 of the switching element 20 by a main current wire W2. The fourth circuit board 41 is electrically connected to the auxiliary emitter external terminal 124 by an auxiliary emitter control wire We4. The fourth circuit board 41 may also be electrically connected to the negative terminal 134.

[0051] The positive terminal 132 and the negative terminal 134 are provided on a predetermined side of the semiconductor module 100. In this example, the positive terminal 132 and the negative terminal 134 are provided on a side perpendicular to the side on which the output terminal 110 is provided. The positive terminal 132 and the negative terminal 134 may be provided on a side perpendicular to the side on which the control terminals such as the gate external terminal 112 are provided. The positive terminal 132 in this example is a side extending in the X-axis direction on the positive side of the Y-axis direction of the semiconductor module 100. The positive terminal 132 in this example is electrically connected to the first circuit board 11 by a positive wire Wp1. The negative terminal 134 is electrically connected to the fourth circuit board 41 by a negative wire Wn1.

[0052] The positive wire Wp2 electrically connects the upper arms of adjacent legs. For example, the positive wire Wp2 is bonded to any circuit board of the adjacent semiconductor assembly 102 so as to be electrically connected to the back electrodes of the switching elements 10 of the adjacent legs. The negative wire Wn2 electrically connects the lower arms of adjacent legs. For example, the negative wire Wn2 is bonded to any circuit board of the adjacent semiconductor assembly 102 so as to be electrically connected to the top electrodes of the switching elements 20 of the adjacent legs. However, the method of connecting adjacent legs is not limited to this example.

[0053] 1D shows the relationship between the gate current Ig and the reverse recovery current Irr flowing through the gate wiring member 12. In this example, the reverse recovery current Irr flows toward the negative side in the X-axis direction, and the gate current Ig flows toward the positive side in the X-axis direction. That is, the gate wiring member 12 is disposed so that the reverse recovery current Irr and the gate current Ig flow in anti-parallel.

[0054] At the start of switching, the reverse recovery current Irr increases in the direction of the arrow. As a result, the mutual induction current Im1 generated in the gate wiring member 12 receiving the magnetic flux of the reverse recovery current Irr is induced in a direction that prevents the increase of the reverse recovery current Irr, as shown by the arrow. When the gate current Ig or the auxiliary emitter current Ie flows in the same direction as the mutual induction current Im1, the switching speed at turn-on is increased. When the gate current Ig or the auxiliary emitter current Ie flows in the opposite direction to the mutual induction current Im1, the switching speed at turn-on is decreased.

[0055] For example, when the reverse recovery current Irr flows toward the negative side in the X-axis direction, a mutual induction current Im1 flows toward the positive side in the X-axis direction in the gate wiring member 12 arranged near the reverse recovery current Irr. As a result, the gate current Ig is strengthened by the mutual induction current Im1 flowing in the same direction.

[0056] In addition, when the reverse recovery current Irr flows toward the negative side in the X-axis direction, the gate line member 12 Apart from reverse recovery current IrrA mutual induction current Im1' flowing toward the positive side in the X-axis direction is also generated in the auxiliary emitter wiring member 14 arranged therein. However, the mutual induction current Im1' generated in the auxiliary emitter wiring member 14 is smaller than the mutual induction current Im1 generated in the gate wiring member 12 because the distance to the reverse recovery current Irr is large. Therefore, although the mutual induction current Im1' is generated in a direction that weakens the auxiliary emitter current Ie, the effect on the auxiliary emitter current Ie is smaller than the effect of the mutual induction current Im1 on the gate current Ig. Therefore, when the gate current Ig flows antiparallel to the reverse recovery current Irr in the gate wiring member 12 arranged close to the switching element 20, the switching speed at the time of turn-on increases overall.

[0057] In this example, the case where the gate current Ig flowing through the gate wiring member 12 is strengthened has been described. However, if the auxiliary emitter wiring member 14 is closer to the switching element 20 than the gate wiring member 12, the auxiliary emitter current Ie flowing through the auxiliary emitter wiring member 14 can be strengthened.

[0058] The semiconductor module 100 includes a gate wiring member 12 and an auxiliary emitter wiring member 14 that are wired to prevent the flow of the gate current Ig or the auxiliary emitter current Ie from being blocked by the reverse recovery current Irr. This enables the semiconductor module 100 to suppress a decrease in switching speed at turn-on and reduce losses.

[0059] In particular, when the switching element 10 and the switching element 20 are each configured on a single chip, the degree of freedom in chip layout is lower than when the transistor and the free wheel diode are configured on separate chips, and the transistor and the free wheel diode of the opposing arm tend to be spatially close to each other. The semiconductor module 100 of this example can improve the degree of freedom in chip layout even when the switching element 10 and the switching element 20 are configured on a single chip in this way. For example, the semiconductor module 100 of this example can suppress a decrease in switching speed caused by the reverse recovery current Irr by devising the wiring of the gate wiring member 12 and the auxiliary emitter wiring member 14, even when the control terminal is arranged on the side opposite the output terminal 110.

[0060] The path member of the arm strengthened by the mutually induced current Im1 of the reverse recovery current Irr may be longer than the path member of the other arm. For example, when the gate current Ig of the gate wiring member 12 electrically connected to the switching element 10 is strengthened, the gate wiring member 12 may be longer than the gate wiring member connected to the gate electrode 27 of the switching element 20. Similarly, when the auxiliary emitter current Ie of the auxiliary emitter wiring member 14 electrically connected to the switching element 10 is strengthened, the auxiliary emitter wiring member 14 may be longer than the auxiliary emitter wiring member connected to the emitter electrode 29 of the switching element 20. In this way, by strengthening the current of the arm of the path member that is longer, Opposite The switching speed of the switching elements provided in the arms can be made uniform.

[0061] 1E is a main circuit diagram of a semiconductor module 100 according to an embodiment. For example, the semiconductor module 100 functions as a part of an in-vehicle unit that drives a motor of a vehicle. The semiconductor module 100 has a positive terminal 132, a negative terminal 134, an output terminal 110U, an output terminal 110V, and an output terminal 110W.

[0062] The leg U-INV is composed of a pair of switching elements 10U and 20U. The leg V-INV is composed of a pair of switching elements 10V and 20V The leg W-INV is composed of a pair of switching elements 10W and 20W.

[0063] Switching element 10U, switching element 10V, and switching element 10W form an upper arm of semiconductor module 100. Switching element 20U, switching element 20V, and switching element 20W form a lower arm of semiconductor module 100.

[0064] The back electrodes of switching element 10U, switching element 10V, and switching element 10W are each electrically connected to positive terminal 132. The front electrodes of switching element 10U, switching element 10V, and switching element 10W are each electrically connected to output terminal 110U, output terminal 110V, or output terminal 110W. Note that, although this example has been described with respect to a case in which the switching elements are RC-IGBTs, which of the front electrode and the back electrode is connected can be changed depending on the direction of the current.

[0065] Front electrodes of switching element 20U, switching element 20V, and switching element 20W are each electrically connected to negative terminal 134. Back electrodes of switching element 20U, switching element 20V, and switching element 20W are each electrically connected to output terminal 110U, output terminal 110V, or output terminal 110W. Each switching element may be alternately switched by a signal input to a control terminal of semiconductor module 100, and function as a three-phase AC inverter circuit.

[0066] 2A shows an example of the configuration of a semiconductor module 500 according to a comparative example. The semiconductor module 500 of this example includes an auxiliary emitter wiring member 514 that is closer to the switching element 20 than the gate wiring member 512. Since the auxiliary emitter current Ie flows in the auxiliary emitter wiring member 514 in the same direction as the reverse recovery current Irr, it is weakened by the influence of the reverse recovery current Irr.

[0067] FIG. 2B shows the relationship between the auxiliary emitter current Ie and the reverse recovery current Irr flowing through the auxiliary emitter wiring member 514. In this example, both the reverse recovery current Irr and the auxiliary emitter current Ie flow toward the negative side in the X-axis direction. When the reverse recovery current Irr flows toward the negative side in the X-axis direction, a mutual induction current Im1 flowing toward the positive side in the X-axis direction is generated in the auxiliary emitter wiring member 514 arranged near the reverse recovery current Irr. As a result, the auxiliary emitter current Ie is weakened by the mutual induction current Im1 flowing in the reverse direction. Also, a mutual induction current Im1' flowing toward the positive side in the X-axis direction is generated in the gate wiring member 512. As a result, the gate current Ig is strengthened by the mutual induction current Im1 flowing in the reverse direction. However, the influence of the weakening of the auxiliary emitter current Ie is greater than the influence of the strengthening of the gate current Ig, so that the switching speed at the time of turn-on is reduced overall. In this example, the case where the auxiliary emitter current Ie flowing through the auxiliary emitter wiring member 514 is weakened has been described, but the gate current Ig flowing through the gate wiring member 512 can also be weakened by a similar arrangement.

[0068] 3 shows the current-voltage characteristics during switching of the semiconductor module 100. This figure shows the gate voltage VGE, collector-emitter voltage VCE, and collector current Ic of the IGBT of the switching element 10. This figure also shows the anode-cathode voltage VAK and forward current IF of the FWD of the switching element 20.

[0069] The circuit states corresponding to times T1 to T3 will be described later. Between times T2 and T3, when a gate current Ig is supplied to the switching element 10 and the IGBT is turned on, a reverse recovery current Irr flows through the opposing arm of the switching element 10. Note that, in this example, a case has been described in which the switching elements 10 and 20 are RC-IGBTs, but the type of the switching elements is not limited to this.

[0070] Fig. 4A is a circuit diagram at time T1 in Fig. 3 showing the on state of the switching element 10 arranged in the upper arm. In this example, the switching element 10 and the switching element 20 are RC-IGBTs including an IGBT and an FWD. When the IGBT of the switching element 10 is turned on by the driving unit 210, a collector current Ic flows to the load 200 at a constant di / dt via the inductance L. Here, since the relationship V = LdIc / dt holds, dIc / dt = V / L = constant.

[0071] Fig. 4B is a circuit diagram at time T2 in Fig. 3, showing the off state of the switching element 10 arranged in the upper arm. When the IGBT of the switching element 10 is turned off, the inductance L causes a current to flow in a direction that prevents a current change. Then, a loop current flows through the FWD of the switching element 20 arranged in the lower arm. When the switching element 10 arranged in the upper arm is in the off state, the switching element 20 arranged in the lower arm is turned on except during the dead time period, but no current flows through the IGBT of the switching element 20 due to the influence of the inductance.

[0072] Fig. 4C is a circuit diagram at time T3 in Fig. 3, showing the on state of the switching element 10 arranged in the upper arm. The drive unit 210 of this example supplies a gate current Ig to the switching element 10 arranged in the upper arm. This turns on the IGBT of the switching element 10, and a current obtained by adding the collector current Ic from the switching element 10 to the loop current flows to the load 200. A reverse recovery current Irr is generated in the FWD of the switching element 20 arranged in the lower arm.

[0073] Fig. 5A is a circuit diagram at time T1 in Fig. 3, showing the on state of the switching element 10 arranged in the lower arm. That is, Fig. 4A and Fig. 5A differ in that the upper arm or the lower arm is made conductive. As in the case of Fig. 4A, when the IGBT of the switching element 10 is turned on by the drive unit 210, the collector current Ic flows to the load 200 at a constant di / dt via the inductance L. Here, the relationship V=LdIc / dt holds, so dIc / dt=V / L=constant.

[0074] Fig. 5B is a circuit diagram at time T2 in Fig. 3, showing the off state of the switching element 10 arranged in the lower arm. When the IGBT of the switching element 10 is turned off, the inductance L causes a current to flow in a direction that prevents a current change. Then, a loop current flows through the FWD of the switching element 20 arranged in the upper arm. When the switching element 10 arranged in the lower arm is in the off state, the switching element 20 arranged in the upper arm is turned on except during the dead time period, but no current flows through the IGBT of the switching element 20 due to the influence of the inductance.

[0075] Fig. 5C is a circuit diagram at time T3 in Fig. 3, showing the on state of the switching element 10 arranged in the lower arm. The drive unit 210 of this example supplies a gate current Ig to the switching element 10 arranged in the lower arm. This turns on the IGBT of the switching element 10, and a current obtained by adding the collector current Ic from the switching element 10 to the loop current flows to the load 200. A reverse recovery current Irr is generated in the FWD of the switching element 20 arranged in the upper arm.

[0076] 6A shows the switching characteristics of a semiconductor module 500, which is a comparative example. This figure shows the gate voltage VGE, collector-emitter voltage VCE, and collector current Ic of the IGBT of the switching element 10 of the semiconductor module 500. This figure also shows the turn-on waveform and the magnitude of loss of the semiconductor module 500. The di / dt (the rate of change of the collector current Ic per time) when the semiconductor module 500 is turned on is 0.88 kA / μs. The loss of the semiconductor module 500 is 97.5 mJ.

[0077] 6B shows the switching characteristics of the semiconductor module 100 according to the embodiment. This figure shows the gate voltage VGE, collector-emitter voltage VCE, and collector current Ic of the IGBT of the switching element 10 of the semiconductor module 100. This figure also shows the turn-on waveform and the magnitude of loss of the semiconductor module 100. The di / dt at the time of turning on the semiconductor module 100 is 1.12 kA / μs. The loss of the semiconductor module 100 is 75.2 mJ.

[0078] As described above, it can be seen that the switching speed of the semiconductor module 100 is faster than that of the semiconductor module 500, and the loss is improved by approximately 25%. In other words, the semiconductor module 100 suppresses the effect of the reverse recovery current Irr on the switching speed, and can obtain better turn-on characteristics than the semiconductor module 500.

[0079] Next, a modified example of the semiconductor module 100 will be described. In the modified example of the semiconductor module 100, the current path of the gate current Ig and the auxiliary emitter current Ie that is antiparallel to the direction of the reverse recovery current Irr is arranged closer to the reverse recovery current Irr, and the current path that is forward to the direction of the reverse recovery current Irr is arranged farther from the reverse recovery current Irr. That is, as described in FIG. 1D, the gate current Ig and the auxiliary emitter current Ie are increased as a whole due to the influence of the mutual induction current Im1 generated according to the reverse recovery current Irr, thereby improving the switching speed at the time of turn-on.

[0080] FIG. 7 shows a modified example of the configuration of the semiconductor module 100. This example differs from the embodiment of FIG. 1A in that a plurality of legs are mounted on a common laminated substrate 150. The semiconductor module 100 of this example has components corresponding to the U-phase, V-phase, and W-phase of a three-phase inverter circuit mounted on the common laminated substrate 150. The other components may be the same as those of the semiconductor module 100 of FIG. 1A. Even when a plurality of legs are mounted on the common laminated substrate 150 as in this example, the gate wiring member 12 and the auxiliary emitter wiring member 14 are arranged so as to prevent the flow of the gate current Ig or the auxiliary emitter current Ie from being obstructed by the reverse recovery current Irr.

[0081] 8A is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of FIG. 1C in that the control terminals are arranged in the order of EGEG. That is, the control terminals are arranged in the order of the auxiliary emitter external terminal 114, the gate external terminal 112, the auxiliary emitter external terminal 124, and the gate external terminal 122 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of FIG. 1C will be particularly described. The gate external terminal 112 of this example is provided closer to the switching element 20 than the auxiliary emitter external terminal 114.

[0082] The gate circuit board Cg1 extends in the X-axis direction between the switching element 20 and the auxiliary emitter circuit board Ce1. The auxiliary emitter circuit board Ce1 is disposed on the positive side of the gate circuit board Cg1 in the Y-axis direction. The auxiliary emitter circuit board Ce1 in this example has an L-shape, but is not limited to this. Another circuit board 152, such as a fourth circuit board 41, may be provided on the positive side of the auxiliary emitter circuit board Ce1 in the Y-axis direction.

[0083] The gate wiring member 12 of this example is provided closer to the switching element 20 than the auxiliary emitter wiring member 14. That is, the gate circuit board Cg1 is provided between the auxiliary emitter circuit board Ce1 and the switching element 20 in the XY plane. The gate wiring member 12 and the auxiliary emitter wiring member 14 of this example are arranged in the Y-axis direction in an order corresponding to the gate external terminal 112 and the auxiliary emitter external terminal 114, and are wired without crossing each other in a top view. The gate wiring member 12, through which the gate current Ig flows antiparallel to the reverse recovery current Irr, is closer to the switching element 20 than the auxiliary emitter wiring member 14, through which the auxiliary emitter current Ie flows in the direction that is the same as the direction of the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall. An overall increase in the gate current Ig and the auxiliary emitter current Ie may mean that the effect of increasing these currents due to the reverse recovery current Irr is greater than the effect of decreasing these currents, and may mean that the switching speed at turn-on is improved.

[0084] 8B is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of FIG. 1C in that the positions of the control terminal connected to the upper arm and the control terminal connected to the lower arm are interchanged. That is, the control terminals of this example are arranged in the order of the gate external terminal 122, the auxiliary emitter external terminal 124, the gate external terminal 112, and the auxiliary emitter external terminal 114 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of FIG. 1C will be particularly described. The gate external terminal 112 of this example is provided closer to the switching element 20 than the auxiliary emitter external terminal 114.

[0085] The gate wiring member 12 is provided on the negative side in the Y-axis direction of the switching element 20. The gate wiring member 12 includes a gate control wire Wg1, a gate circuit board Cg1, and a gate control wire Wg3. The gate wiring member 12 is provided between the switching element 20 and the auxiliary emitter wiring member 14. The gate circuit board Cg1 extends in the X-axis direction between the switching element 20 and the auxiliary emitter circuit board Ce1.

[0086] The auxiliary emitter wiring member 14 is provided on the negative side in the Y-axis direction relative to the switching element 20. The auxiliary emitter wiring member 14 includes an auxiliary emitter control wire We1, an auxiliary emitter circuit board Ce1, and an auxiliary emitter control wire We3. The auxiliary emitter circuit board Ce1 is disposed on the negative side in the Y-axis direction relative to the gate circuit board Cg1, and extends in the X-axis direction.

[0087] In this way, even if the position of the switching element 20 is changed, the gate current Ig and the reverse recovery current Irr flowing in the gate wiring member 12 functioning as the first path member can flow anti-parallel to each other. When the gate wiring member 12 and the auxiliary emitter wiring member 14 are disposed in a position closer to the adjacent semiconductor assembly 102 than the switching element 20, the current path may be wired so that the gate current Ig and the auxiliary emitter current Ie increase overall, taking into consideration the influence of the adjacent semiconductor assembly 102 in addition to the reverse recovery current Irr of that semiconductor assembly 102.

[0088] 8C is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of FIG. 8B in that the control terminals are arranged in the order EGEG. That is, the control terminals are arranged in the order of the auxiliary emitter external terminal 124, the gate external terminal 122, the auxiliary emitter external terminal 114, and the gate external terminal 112 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of FIG. 8B will be particularly described. The gate external terminal 112 in this example is closer to the switching element 20 than the auxiliary emitter external terminal 114. At a distance from It will be established.

[0089] The gate circuit board Cg1 is provided between the switching element 20 and the auxiliary emitter circuit board Ce1. The gate circuit board Cg1 in this example has an L-shape, but is not limited thereto. The auxiliary emitter circuit board Ce1 extends in the X-axis direction on the negative side in the Y-axis direction of the gate circuit board Cg1. Another circuit board 152, such as a fourth circuit board 41, may be provided on the positive side in the Y-axis direction of the switching element 20. As a result, the gate wiring member 12 and the auxiliary emitter wiring member 14 are arranged so as to avoid the flow of the gate current Ig or the auxiliary emitter current Ie being hindered by the reverse recovery current Irr even in relation to the adjacent semiconductor assembly 102.

[0090] The gate wiring member 12 of this example is provided closer to the switching element 20 than the auxiliary emitter wiring member 14. The gate circuit board Cg1 of this example is provided between the auxiliary emitter circuit board Ce1 and the switching element 20 in the XY plane. The gate wiring member 12 and the auxiliary emitter wiring member 14 of this example may be wired so as to cross each other in a top view. In this example, the gate circuit board Cg1 and the auxiliary emitter control wire We3 are wired so as to cross each other.

[0091] Fig. 8D is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 1C in that the positions of the positive electrode terminal 132 and the negative electrode terminal 134 are interchanged. The positive electrode terminal 132 of this example is disposed on the negative side in the X-axis direction relative to the negative electrode terminal 134. In this example, the differences from the embodiment of Fig. 1C will be particularly described.

[0092] The gate circuit board Cg1 is provided between the switching element 20 and the auxiliary emitter circuit board Ce1. In this example, the gate circuit board Cg1 has a substantially U-shaped shape, but is not limited to this. The auxiliary emitter circuit board Ce1 extends in the X-axis direction on the positive side in the Y-axis direction of the gate circuit board Cg1. Another circuit board 152, such as the first circuit board 11, may be provided on the positive side in the Y-axis direction of the auxiliary emitter circuit board Ce1.

[0093] In this example, the negative terminal 134 is disposed on the positive side in the X-axis direction relative to the positive terminal 132, and when the switching element 10 disposed in the upper arm is energized, a reverse recovery current Irr is generated in the lower arm toward the positive side in the X-axis direction. Meanwhile, a gate current Ig flows in the gate circuit board Cg1 toward the negative side in the X-axis direction. Therefore, the gate current Ig adjacent to the switching element 20 flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0094] Fig. 8E is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 8D in that the control terminals are arranged in the order of EGEG. That is, the control terminals are arranged in the order of the auxiliary emitter external terminal 114, the gate external terminal 112, the auxiliary emitter external terminal 124, and the gate external terminal 122 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of Fig. 8D will be particularly described. The gate external terminal 112 of this example is provided closer to the switching element 20 than the auxiliary emitter external terminal 114.

[0095] The gate circuit board Cg1 extends in the X-axis direction between the switching element 20 and the auxiliary emitter circuit board Ce1. The auxiliary emitter circuit board Ce1 extends in the X-axis direction on the positive side of the Y-axis direction from the gate circuit board Cg1. Another circuit board 152, such as the first circuit board 11, may be provided on the positive side of the auxiliary emitter circuit board Ce1 in the Y-axis direction. The gate wiring member 12 and the auxiliary emitter wiring member 14 of this example are arranged in the Y-axis direction in an order corresponding to the gate external terminal 112 and the auxiliary emitter external terminal 114, and are wired without crossing each other in a top view.

[0096] In this example, the negative terminal 134 is disposed on the positive side in the X-axis direction relative to the positive terminal 132, and when the switching element 10 disposed in the upper arm is energized, a reverse recovery current Irr toward the positive side in the X-axis direction is generated in the lower arm. Meanwhile, an auxiliary emitter current Ie toward the negative side in the X-axis direction flows in the auxiliary emitter circuit board Ce1. Therefore, the auxiliary emitter current Ie adjacent to the switching element 20 flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0097] Fig. 8F is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 8D in that the gate external terminal 112 and the auxiliary emitter external terminal 114 are disposed on the negative side in the Y-axis direction relative to the gate external terminal 122 and the auxiliary emitter external terminal 124. The control terminals of this example are disposed in the order of the gate external terminal 122, the auxiliary emitter external terminal 124, the gate external terminal 112, and the auxiliary emitter external terminal 114 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of Fig. 8D will be particularly described.

[0098] The gate circuit board Cg1 extends in the Y-axis direction on the negative side of the X-axis direction relative to the switching element 10. The gate current Ig flows in the negative side of the Y-axis direction in the gate circuit board Cg1. The auxiliary emitter wiring member 14 is provided closer to the switching element 20 than the gate wiring member 12. That is, in this example, the gate wiring member 12 functions as a second path member, and the auxiliary emitter wiring member 14 functions as a first path member. The auxiliary emitter circuit board Ce1 is disposed on the positive side of the X-axis direction relative to the gate circuit board Cg1. The auxiliary emitter circuit board Ce1 in this example has an L-shape, but is not limited thereto.

[0099] When the switching element 10 arranged in the upper arm is energized, a reverse recovery current Irr is generated in the lower arm toward the positive side in the X-axis direction. Meanwhile, in the auxiliary emitter circuit board Ce1, an auxiliary emitter current Ie flows toward the negative side in the X-axis direction in a region adjacent to the switching element 20. In this way, even if the arrangement of the control terminal and the switching element 20 is changed, the auxiliary emitter current Ie adjacent to the switching element 20 flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0100] The auxiliary emitter circuit board Ce1 is arranged so that the region of the L-shape where the auxiliary emitter current Ie flows anti-parallel to the reverse recovery current Irr is closer to the switching element 20 than the region where the auxiliary emitter current Ie flows in a direction perpendicular to the reverse recovery current Irr. This improves the switching speed at turn-on and allows the current path to be wired more flexibly.

[0101] Fig. 8G is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 8F in that the control terminals are arranged in the order of EGEG. That is, the control terminals are arranged in the order of the auxiliary emitter external terminal 124, the gate external terminal 122, the auxiliary emitter external terminal 114, and the gate external terminal 112 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of Fig. 8F will be particularly described.

[0102] The gate circuit board Cg1 extends in the Y-axis direction between the switching element 10 and the auxiliary emitter circuit board Ce1. The auxiliary emitter circuit board Ce1 is provided between the switching element 20 and the gate circuit board Cg1. The auxiliary emitter circuit board Ce1 in this example has an L-shape, but is not limited to this. Another circuit board 152, such as the first circuit board 11, may be provided on the positive side of the switching element 20 in the Y-axis direction. As a result, the gate wiring member 12 and the auxiliary emitter wiring member 14 are arranged so as to avoid the flow of the gate current Ig or the auxiliary emitter current Ie being hindered by the reverse recovery current Irr even in relation to the adjacent semiconductor assembly 102.

[0103] In this example, the gate wiring member 12 and the auxiliary emitter wiring member 14 may be wired so as to cross each other in a top view. The auxiliary emitter circuit board Ce1 has an L-shape, which makes it easier for the gate wiring member 12 and the auxiliary emitter wiring member 14 to cross each other. In this example, the auxiliary emitter circuit board Ce1 and the gate control wire Wg3 are wired so as to cross each other. Also, as in the example of FIG. 8F, by devising the arrangement of the L-shaped auxiliary emitter circuit board Ce1, it is possible to improve the switching speed at the time of turn-on and wire the current path more flexibly.

[0104] 9A is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of FIG. 1C in that a reverse recovery current Irr is generated in the upper arm when the switching element 10 arranged in the lower arm is energized. That is, the second circuit board 21 on which the switching element 20 is arranged is electrically connected to the positive terminal 132. In this example, the differences from the embodiment of FIG. 1C will be particularly described. The control terminals of this example are arranged in the order of the gate external terminal 122, the auxiliary emitter external terminal 124, the gate external terminal 112, and the auxiliary emitter external terminal 114 toward the negative side in the Y-axis direction.

[0105] The gate circuit plate Cg1 extends in the Y-axis direction. The auxiliary emitter circuit plate Ce1 is disposed on the positive side of the gate circuit plate Cg1 in the X-axis direction. The auxiliary emitter circuit plate Ce1 in this example has an L-shape, but is not limited thereto. Regardless of the shape of the auxiliary emitter circuit plate Ce1, the region in which the auxiliary emitter current Ie flows antiparallel to the reverse recovery current Irr may be disposed closer to the switching element 20 than the region in which the auxiliary emitter current Ie flows in a direction perpendicular to the reverse recovery current Irr.

[0106] The auxiliary emitter wiring member 14 in this example is provided closer to the switching element 20 than the gate wiring member 12. That is, the auxiliary emitter circuit board Ce1 is provided between the gate circuit board Cg1 and the switching element 20 in the XY plane. In this way, even when a reverse recovery current Irr is generated in the upper arm, the auxiliary emitter current Ie flowing in the auxiliary emitter wiring member 14 functioning as the first path member flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and auxiliary emitter current Ie increase overall.

[0107] 9B is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of FIG. 9A in that the control terminals are arranged in the order E, G, and E. The control terminal of 9A。 In this example, the differences from the embodiment in Fig. 9A will be particularly described. The gate external terminal 112 in this example is provided farther away from the switching element 20 than the auxiliary emitter external terminal 114.

[0108] The gate circuit board Cg1 extends in the Y-axis direction on the negative side of the X-axis direction from the switching element 10. The auxiliary emitter circuit board Ce1 is disposed between the gate circuit board Cg1 and the switching element 20. That is, the auxiliary emitter wiring member 14 is provided closer to the switching element 20 than the gate wiring member 12. The auxiliary emitter circuit board Ce1 in this example has an L-shape, but is not limited thereto. The gate wiring member 12 and the auxiliary emitter wiring member 14 in this example are disposed in the Y-axis direction in an order corresponding to the gate external terminal 112 and the auxiliary emitter external terminal 114, and are wired without crossing each other in a top view.

[0109] Fig. 9C is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 9A in that the gate external terminal 112 and the auxiliary emitter external terminal 114 are arranged on the positive side in the Y-axis direction relative to the gate external terminal 122 and the auxiliary emitter external terminal 124. The control terminals of this example are arranged in the order of the gate external terminal 112, the auxiliary emitter external terminal 114, the gate external terminal 122, and the auxiliary emitter external terminal 124 toward the negative side in the Y-axis direction. The gate external terminal 112 of this example is provided farther away from the switching element 20 than the auxiliary emitter external terminal 114.

[0110] When the switching element 10 arranged in the lower arm is energized, a reverse recovery current Irr is generated in the upper arm toward the positive side in the X-axis direction. Meanwhile, in the auxiliary emitter circuit board Ce1, an auxiliary emitter current Ie flows toward the negative side in the X-axis direction in a region adjacent to the switching element 20. In this way, even if the arrangement of the control terminal and the switching element 20 is changed, the auxiliary emitter current Ie adjacent to the switching element 20 flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0111] The auxiliary emitter circuit plate Ce1 is arranged so that the region of the L-shaped configuration in which the auxiliary emitter current Ie flows anti-parallel to the reverse recovery current Irr is closer to the switching element 20 than the region in which the auxiliary emitter current Ie flows in a direction perpendicular to the reverse recovery current Irr. This improves the switching speed at the time of turn-on and allows the current path to be wired more flexibly. In this example, the case in which the auxiliary emitter current Ie flows anti-parallel to the reverse recovery current Irr in the auxiliary emitter circuit plate Ce1 has been described, but the same applies to the case in which the gate current Ig flows anti-parallel to the reverse recovery current Irr in the gate circuit plate Cg1.

[0112] Fig. 9D is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 9C in that the control terminals are arranged in the order of EGEG. That is, the control terminals are arranged in the order of the auxiliary emitter external terminal 114, the gate external terminal 112, the auxiliary emitter external terminal 124, and the gate external terminal 122 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of Fig. 9C will be particularly described. The gate external terminal 112 of this example is provided closer to the switching element 20 than the auxiliary emitter external terminal 114.

[0113] The gate circuit board Cg1 extends in the Y-axis direction on the negative side of the switching element 10 in the X-axis direction. The auxiliary emitter circuit board Ce1 is provided between the gate circuit board Cg1 and the switching element 20. The auxiliary emitter circuit board Ce1 in this example has an L-shape, but is not limited to this. A circuit board 152 may be provided on the positive side of the switching element 10, the gate circuit board Cg1, and the auxiliary emitter circuit board Ce1 in the Y-axis direction. As a result, the gate wiring member 12 and the auxiliary emitter wiring member 14 are arranged so as to avoid the flow of the gate current Ig or the auxiliary emitter current Ie being hindered by the reverse recovery current Irr even in relation to the adjacent semiconductor assembly 102.

[0114] Furthermore, since the gate circuit board Cg1 of this example is provided extending in the Y-axis direction, it is possible to avoid the influence of the reverse recovery current Irr generated in the adjacent semiconductor assembly 102. Similarly, since the auxiliary emitter circuit board Ce1 has an L-shaped portion extending in the Y-axis direction provided at an end of the semiconductor assembly 102 and a portion extending in the X-axis direction provided in the center of the semiconductor assembly 102, it is easy to avoid the influence of the reverse recovery current Irr generated in the adjacent semiconductor assembly 102.

[0115] Fig. 9E is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 9A in that the positions of the positive electrode terminal 132 and the negative electrode terminal 134 are interchanged. The positive electrode terminal 132 of this example is disposed on the negative side in the X-axis direction relative to the negative electrode terminal 134. In this example, the differences from the embodiment of Fig. 9A will be particularly described.

[0116] The gate circuit board Cg1 extends in the X-axis direction on the negative side in the Y-axis direction of the switching element 20. The auxiliary emitter circuit board Ce1 is provided between the gate circuit board Cg1 and the switching element 20. The auxiliary emitter circuit board Ce1 in this example has an L-shape, but is not limited to this. Another circuit board 152, such as the second circuit board 21, may be provided on the negative side in the Y-axis direction of the gate circuit board Cg1 and the auxiliary emitter circuit board Ce1.

[0117] In this example, the negative terminal 134 is disposed on the positive side in the X-axis direction relative to the positive terminal 132, and when the switching element 10 disposed in the lower arm is energized, a reverse recovery current Irr toward the positive side in the X-axis direction is generated in the upper arm. Meanwhile, an auxiliary emitter current Ie toward the negative side in the X-axis direction flows in the auxiliary emitter circuit board Ce1. Therefore, the auxiliary emitter current Ie adjacent to the switching element 20 flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0118] 9F is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of FIG. 9E in that the control terminals are arranged in the order of EGEG. That is, the control terminals are arranged in the order of the auxiliary emitter external terminal 124, the gate external terminal 122, the auxiliary emitter external terminal 114, and the gate external terminal 112 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of FIG. 9E will be particularly described. The gate external terminal 112 of this example is provided farther away from the switching element 20 than the auxiliary emitter external terminal 114.

[0119] The gate circuit board Cg1 extends in the X-axis direction on the negative side in the Y-axis direction of the switching element 20. The auxiliary emitter circuit board Ce1 extends in the X-axis direction between the gate circuit board Cg1 and the switching element 20. Another circuit board 152, such as a second circuit board 21, may be provided on the negative side in the Y-axis direction of the gate circuit board Cg1 and the auxiliary emitter circuit board Ce1. The gate wiring member 12 and the auxiliary emitter wiring member 14 of this example are arranged in the Y-axis direction in an order corresponding to the gate external terminals 112 and the auxiliary emitter external terminals 114, and are wired without crossing each other in a top view.

[0120] In this example, the negative terminal 134 is disposed on the positive side in the X-axis direction relative to the positive terminal 132, and when the switching element 10 disposed in the lower arm is energized, a reverse recovery current Irr toward the positive side in the X-axis direction is generated in the upper arm. Meanwhile, an auxiliary emitter current Ie toward the negative side in the X-axis direction flows in the auxiliary emitter circuit board Ce1. Therefore, the auxiliary emitter current Ie adjacent to the switching element 20 flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0121] Fig. 9G is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 9E in that the gate external terminal 112 and the auxiliary emitter external terminal 114 are disposed on the positive side in the Y-axis direction relative to the gate external terminal 122 and the auxiliary emitter external terminal 124. The control terminals of this example are disposed in the order of the gate external terminal 112, the auxiliary emitter external terminal 114, the gate external terminal 122, and the auxiliary emitter external terminal 124 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of Fig. 9E will be particularly described.

[0122] The gate circuit plate Cg1 extends in the X-axis direction on the positive side in the Y-axis direction of the switching element 20. The auxiliary emitter circuit plate Ce1 extends in the X-axis direction between the gate circuit plate Cg1 and the switching element 20. Another circuit plate 152, such as the second circuit plate 21, may be provided on the positive side in the Y-axis direction of the gate circuit plate Cg1 and the auxiliary emitter circuit plate Ce1.

[0123] When the switching element 10 arranged in the lower arm is energized, a reverse recovery current Irr is generated in the upper arm toward the positive side in the X-axis direction. Meanwhile, an auxiliary emitter current Ie flows toward the negative side in the X-axis direction in the auxiliary emitter circuit board Ce1. In this way, even if the arrangement of the control terminal and the switching element 20 is changed, the auxiliary emitter current Ie adjacent to the switching element 20 flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0124] Fig. 9H is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 9G in that the control terminals are arranged in the order of EGEG. That is, the control terminals are arranged in the order of the auxiliary emitter external terminal 114, the gate external terminal 112, the auxiliary emitter external terminal 124, and the gate external terminal 122 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of Fig. 9G will be particularly described.

[0125] The gate circuit board Cg1 is provided on the positive side in the Y-axis direction of the switching element 20. In this example, the gate circuit board Cg1 has an L-shape, but is not limited to this. The auxiliary emitter circuit board Ce1 extends in the X-axis direction between the gate circuit board Cg1 and the switching element 20. Another circuit board 152, such as the second circuit board 21, may be provided on the positive side in the Y-axis direction of the gate circuit board Cg1 and the auxiliary emitter circuit board Ce1.

[0126] The auxiliary emitter wiring member 14 in this example is provided closer to the switching element 20 than the gate wiring member 12. The gate wiring member 12 and the auxiliary emitter wiring member 14 in this example may be wired so as to cross each other in a top view. The gate circuit board Cg1 having an L-shape makes it easier for the gate wiring member 12 and the auxiliary emitter wiring member 14 to cross each other. In this example, the gate circuit board Cg1 and the auxiliary emitter control wire We3 are wired so as to cross each other.

[0127] Fig. 10A is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 1C in that one of the gate wiring member 12 and the auxiliary emitter wiring member 14 is made of a circuit board 152 and the other is made of a wire member in a region adjacent to the switching element 20. In this example, the differences from the embodiment of Fig. 1C will be particularly described.

[0128] The gate wiring member 12 of this example has a gate circuit board Cg1 at a position facing the reverse recovery current Irr. The auxiliary emitter wiring member 14 has an auxiliary emitter control wire We5 at a position facing the reverse recovery current Irr. The position facing the reverse recovery current Irr refers to, for example, a position extending in the direction in which the reverse recovery current Irr flows and facing the switching element 20 in the Y-axis direction. Note that, at a position facing the reverse recovery current Irr, the gate wiring member 12 may have a wire member, and the auxiliary emitter wiring member 14 may have an auxiliary emitter circuit board Ce1.

[0129] The gate circuit board Cg1 is disposed on the positive side in the Y-axis direction relative to the switching element 20. In this example, the gate circuit board Cg1 is provided between the auxiliary emitter control wire We5 and the switching element 20 in top view. The gate circuit board Cg1 is provided closer to the switching element 20 than the auxiliary emitter control wire We5. The gate circuit board Cg1 has a substantially U-shape, but is not limited to this.

[0130] The auxiliary emitter control wire We5 is provided so as to extend substantially in the X-axis direction in a top view. The auxiliary emitter circuit plate Ce1 is disposed on the negative side in the X-axis direction relative to the gate circuit plate Cg1. 5 is wired from the switching element 10 to the auxiliary emitter circuit plate Ce1, passing above the gate circuit plate Cg1. The auxiliary emitter current Ie flows in the auxiliary emitter control wire We5 substantially in the X-axis direction.

[0131] In this way, even if the auxiliary emitter wiring member 14 is composed of the auxiliary emitter control wire We5 in the region adjacent to the switching element 20, the current flowing through the first path member adjacent to the switching element 20 can be arranged anti-parallel to the reverse recovery current Irr, as in the other embodiments. That is, whether the first path member and the second path member are adjacent to the switching element 20 may be determined in consideration of a three-dimensional space, not limited to the XY plane. The auxiliary emitter wiring member 14 of this example further easily suppresses the influence of the reverse recovery current Irr by arranging the auxiliary emitter control wire We5 at a position facing the reverse recovery current Irr and moving the auxiliary emitter current Ie above the circuit board 152.

[0132] 10B is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of FIG. 10A in that the control terminals are arranged in the order of E, G, and E. The control terminal of10A。 In this example, the differences from the embodiment in Fig. 10A will be particularly described. The gate external terminal 112 in this example is provided closer to the switching element 20 than the auxiliary emitter external terminal 114.

[0133] The gate circuit board Cg1 is provided on the positive side in the Y-axis direction relative to the switching element 20. The gate circuit board Cg1 in this example is X Although it extends in the axial direction, it may have a shape having a step in a substantially S-shape. In the gate wiring member 12 of this example, by disposing the gate circuit board Cg1 at a position facing the reverse recovery current Irr, it becomes closer to the reverse recovery current Irr than when a wire member is used, and the mutual induction current Im1 makes it easier to strengthen the gate current Ig.

[0134] The auxiliary emitter wiring member 14 includes an auxiliary emitter control wire We1, an auxiliary emitter circuit board Ce1, an auxiliary emitter control wire We5, an auxiliary emitter circuit board Ce2, and an auxiliary emitter control wire We3. The auxiliary emitter circuit board Ce1 and the auxiliary emitter circuit board Ce2 are disposed on the positive side in the Y-axis direction of the switching element 20, sandwiching the gate circuit board Cg1 therebetween. The auxiliary emitter control wire We5 is wired in the substantially X-axis direction from the auxiliary emitter circuit board Ce1 to the auxiliary emitter circuit board Ce2, passing above the gate circuit board Cg1. The auxiliary emitter control wire We5 is disposed farther away from the switching element 20 than the gate circuit board Cg1.

[0135] The auxiliary emitter control wire We5 may cross the gate circuit board Cg1 in top view. In this example, the gate circuit board Cg1 is wired so that the reverse recovery current Irr and the gate current Ig flow anti-parallel in the region close to the reverse recovery current Irr, so that the gate current Ig can be strengthened by the reverse recovery current Irr. This makes it easier for the gate current Ig and the auxiliary emitter current Ie to increase overall, and makes it easier to improve the switching speed at turn-on.

[0136] Fig. 10C is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 10A in that the gate external terminal 112 and the auxiliary emitter external terminal 114 are arranged on the negative side in the Y-axis direction relative to the gate external terminal 122 and the auxiliary emitter external terminal 124. The control terminals of this example are arranged in the order of the gate external terminal 122, the auxiliary emitter external terminal 124, the gate external terminal 112, and the auxiliary emitter external terminal 114 toward the negative side in the Y-axis direction. The gate external terminal 112 of this example is provided closer to the switching element 20 than the auxiliary emitter external terminal 114.

[0137] The gate circuit board Cg1 is provided on the negative side in the Y-axis direction from the switching element 20. The gate circuit board Cg1 in this example is X Although it extends in the axial direction, it may have a shape having a step in a substantially S-shape. In the gate wiring member 12 of this example, by disposing the gate circuit board Cg1 at a position facing the reverse recovery current Irr, it becomes closer to the reverse recovery current Irr than when a wire member is used, and the mutual induction current Im1 makes it easier to strengthen the gate current Ig.

[0138] The auxiliary emitter wiring member 14 includes an auxiliary emitter control wire We1, an auxiliary emitter circuit board Ce1, an auxiliary emitter control wire We5, an auxiliary emitter circuit board Ce2, and an auxiliary emitter control wire We3. The auxiliary emitter circuit board Ce1 and the auxiliary emitter circuit board Ce2 are disposed on the negative side of the switching element 20 in the Y-axis direction, sandwiching the gate circuit board Cg1 therebetween. The auxiliary emitter control wire We5 is wired in the approximate X-axis direction from the auxiliary emitter circuit board Ce1 to the auxiliary emitter circuit board Ce2, passing above the gate circuit board Cg1. The auxiliary emitter control wire We5 is disposed farther away from the switching element 20 than the gate circuit board Cg1.

[0139] When the switching element 10 arranged in the upper arm is energized, a reverse recovery current Irr is generated in the lower arm toward the negative side in the X-axis direction. Meanwhile, in the gate circuit board Cg1, a gate current Ig flows toward the positive side in the X-axis direction in a region adjacent to the switching element 20. In this way, even if the arrangement of the control terminal and the switching element 20 is changed, the gate current Ig adjacent to the switching element 20 flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0140] Fig. 10D is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 10C in that the control terminals are arranged in the order of EGEG. That is, the control terminals are arranged in the order of the auxiliary emitter external terminal 124, the gate external terminal 122, the auxiliary emitter external terminal 114, and the gate external terminal 112 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of Fig. 10C will be particularly described. The gate external terminal 112 of this example is provided farther away from the switching element 20 than the auxiliary emitter external terminal 114.

[0141] The gate circuit board Cg1 is provided on the negative side in the X-axis direction of the switching element 10. The gate circuit board Cg1 in this example is XIt extends in the axial direction and may have a substantially S-shaped step.

[0142] The auxiliary emitter wiring member 14 includes an auxiliary emitter control wire We1, an auxiliary emitter circuit board Ce1, an auxiliary emitter control wire We5, an auxiliary emitter circuit board Ce2, an auxiliary emitter control wire We6, an auxiliary emitter circuit board Ce3, and an auxiliary emitter control wire We3. The auxiliary emitter circuit board Ce1 and the auxiliary emitter circuit board Ce2 are disposed on the negative side in the Y-axis direction from the switching element 20, with the gate circuit board Cg1 interposed therebetween.

[0143] The auxiliary emitter control wire We5 is wired from the auxiliary emitter circuit plate Ce1 to the auxiliary emitter circuit plate Ce2, passing above the gate circuit plate Cg1, in approximately the X-axis direction. The auxiliary emitter circuit plate Ce3 is disposed on the negative side of the auxiliary emitter circuit plate Ce2 in the X-axis direction, with the fourth circuit plate 41 in between. The auxiliary emitter control wire We6 is wired from the auxiliary emitter circuit plate Ce2 to the auxiliary emitter circuit plate Ce3, passing above the fourth circuit plate 41.

[0144] Fig. 10E is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 10A in that the positions of the positive electrode terminal 132 and the negative electrode terminal 134 are interchanged. The positive electrode terminal 132 of this example is disposed on the negative side in the X-axis direction relative to the negative electrode terminal 134. In this example, the differences from the embodiment of Fig. 10A will be particularly described.

[0145] The gate wiring member 12 includes a gate control wire Wg1, a gate circuit board Cg1, a gate control wire Wg5, a gate circuit board Cg2, and a gate control wire Wg3. The gate circuit board Cg1 and the gate circuit board Cg2 are disposed on the positive side in the Y-axis direction of the switching element 20, sandwiching the auxiliary emitter circuit board Ce1. The gate control wire Wg5 is provided extending in the X-axis direction beyond above the auxiliary emitter circuit board Ce1. A circuit board 152 such as the first circuit board 11 may be disposed on the positive side in the Y-axis direction of the gate circuit board Cg1 and the gate circuit board Cg2.

[0146] In this example, the negative terminal 134 is disposed on the positive side in the X-axis direction relative to the positive terminal 132, and when the switching element 10 disposed in the upper arm is energized, a reverse recovery current Irr toward the positive side in the X-axis direction is generated in the lower arm. Meanwhile, an auxiliary emitter current Ie toward the negative side in the X-axis direction flows in the auxiliary emitter circuit board Ce1. Therefore, the auxiliary emitter current Ie adjacent to the switching element 20 flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0147] Fig. 10F is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 10E in that the control terminals are arranged in the order of EGEG. That is, the control terminals are arranged in the order of the auxiliary emitter external terminal 114, the gate external terminal 112, the auxiliary emitter external terminal 124, and the gate external terminal 122 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of Fig. 10E will be particularly described. The gate external terminal 112 of this example is provided closer to the switching element 20 than the auxiliary emitter external terminal 114.

[0148] The gate circuit plate Cg1 and the gate circuit plate Cg2 are disposed with the auxiliary emitter circuit plate Ce1 between them. The gate control wire Wg5 is wired extending substantially in the X-axis direction beyond the upper part of the auxiliary emitter circuit plate Ce1. The auxiliary emitter circuit plate Ce1 has a region closer to the switching element 20 than the gate control wire Wg5. In the region of the auxiliary emitter circuit plate Ce1 close to the switching element 20, the auxiliary emitter current Ie flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0149] In this example, the gate control wire Wg1 and the auxiliary emitter control wire We1 are disposed at positions facing the reverse recovery current Irr. The auxiliary emitter control wire We1 passes an auxiliary emitter current Ie anti-parallel to the reverse recovery current Irr, and is disposed closer to the switching element 20 than the gate control wire Wg1. This makes it possible to strengthen the auxiliary emitter current Ie flowing through the auxiliary emitter wiring member 14.

[0150] Fig. 10G is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 10E in that the gate external terminal 112 and the auxiliary emitter external terminal 114 are disposed on the negative side in the Y-axis direction relative to the gate external terminal 122 and the auxiliary emitter external terminal 124. The control terminals of this example are disposed in the order of the gate external terminal 122, the auxiliary emitter external terminal 124, the gate external terminal 112, and the auxiliary emitter external terminal 114 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of Fig. 10E will be particularly described.

[0151] The gate circuit board Cg1 and the gate circuit board Cg2 are disposed on the negative side of the switching element 20 in the Y-axis direction, sandwiching the auxiliary emitter circuit board Ce1. The auxiliary emitter circuit board Ce1 extends in the X-axis direction on the negative side of the switching element 20 in the Y-axis direction. The auxiliary emitter circuit board Ce1 of this example has a region closer to the switching element 20 than the gate control wire Wg5. In the region of the auxiliary emitter circuit board Ce1 closer to the switching element 20 than the gate control wire Wg5, the auxiliary emitter current Ie flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0152] Fig. 10H is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 10G in that the control terminals are arranged in the order of EGEG. That is, the control terminals are arranged in the order of the auxiliary emitter external terminal 124, the gate external terminal 122, the auxiliary emitter external terminal 114, and the gate external terminal 112 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of Fig. 10G will be particularly described.

[0153] The gate circuit board Cg1 is disposed between the switching element 10 and the switching element 20. The gate circuit board Cg2 is disposed on the negative side of the switching element 20 in the X-axis direction. The auxiliary emitter circuit board Ce1 extends in the X-axis direction between the gate circuit board Cg2 and the switching element 10. A circuit board 152 such as the second circuit board 21 may be provided on the negative side of the switching element 10 in the Y-axis direction. A circuit board 152 such as the first circuit board 11 may be provided on the positive side of the switching element 20 in the Y-axis direction.

[0154] The auxiliary emitter circuit plate Ce1 in this example has a region closer to the switching element 20 than the gate control wire Wg5. In the region of the auxiliary emitter circuit plate Ce1 closer to the switching element 20 than the gate control wire Wg5, the auxiliary emitter current Ie flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0155] 11A is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of FIG. 10A in that a reverse recovery current Irr is generated in the upper arm when the switching element 10 arranged in the lower arm is energized. That is, the second circuit board 21 on which the switching element 20 is arranged is electrically connected to the positive terminal 132. In this example, the differences from the embodiment of FIG. 10A will be particularly described. The control terminals of this example are arranged in the order of the gate external terminal 122, the auxiliary emitter external terminal 124, the gate external terminal 112, and the auxiliary emitter external terminal 114 toward the negative side in the Y-axis direction.

[0156] The gate circuit board Cg1 and the gate circuit board Cg2 are provided with the auxiliary emitter circuit board Ce1 between them. The auxiliary emitter circuit board Ce1 is provided on the negative side of the switching element 20 in the Y-axis direction. The auxiliary emitter circuit board Ce1 in this example has an L-shape, but is not limited to this. The auxiliary emitter circuit board Ce1 has a region closer to the switching element 20 than the gate control wire Wg5. In the region of the auxiliary emitter circuit board Ce1 closer to the switching element 20 than the gate control wire Wg5, the auxiliary emitter current Ie flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0157] 11B is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of FIG. 11A in that the control terminals are arranged in the order of E, G, and E. The control terminal of , the auxiliary emitter external terminal 124, the gate external terminal 122, the auxiliary emitter external terminal 114, and the gate external terminal 112 are arranged in this order toward the negative side in the Y-axis direction. In this example, differences from the embodiment in Fig. 11A will be particularly described. The gate external terminal 112 in this example is provided farther away from the switching element 20 than the auxiliary emitter external terminal 114.

[0158] The gate circuit board Cg1 and the gate circuit board Cg2 are provided on either side of the auxiliary emitter circuit board Ce1. In this example, the gate circuit board Cg2 extends to the negative side in the Y-axis direction up to the vicinity of the gate external terminal 112 in order to be connected to the gate external terminal 112 by the gate control wire Wg3.

[0159] The auxiliary emitter circuit plate Ce1 extends in the X-axis direction on the negative side in the Y-axis direction of the switching element 20. The auxiliary emitter circuit plate Ce1 has a region closer to the switching element 20 than the gate control wire Wg5. In the region of the auxiliary emitter circuit plate Ce1 closer to the switching element 20 than the gate control wire Wg5, the auxiliary emitter current Ie flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and auxiliary emitter current Ie increase overall.

[0160] 11C is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of FIG. 11A in that the gate external terminal 112 and the auxiliary emitter external terminal 114 are disposed on the positive side in the Y-axis direction relative to the gate external terminal 122 and the auxiliary emitter external terminal 124. The control terminals of this example are disposed in the order of the gate external terminal 112, the auxiliary emitter external terminal 114, the gate external terminal 122, and the auxiliary emitter external terminal 124 toward the negative side in the Y-axis direction. The gate external terminal 112 of this example is provided farther away from the switching element 20 than the auxiliary emitter external terminal 114.

[0161] The gate circuit board Cg1 and the gate circuit board Cg2 are provided on either side of the auxiliary emitter circuit board Ce1 on the positive side in the Y-axis direction of the switching element 20. In this example, the gate circuit board Cg2 extends to the positive side in the Y-axis direction up to the vicinity of the gate external terminal 112 in order to be connected to the gate external terminal 112 by the gate control wire Wg3.

[0162] The auxiliary emitter circuit plate Ce1 extends in the X-axis direction on the positive side in the Y-axis direction of the switching element 20. The auxiliary emitter circuit plate Ce1 has a region closer to the switching element 20 than the gate control wire Wg5. In the region of the auxiliary emitter circuit plate Ce1 closer to the switching element 20 than the gate control wire Wg5, the auxiliary emitter current Ie flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and auxiliary emitter current Ie increase overall.

[0163] 11D is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of FIG. 11C in that the control terminals are arranged in the order of EGEG. That is, the control terminals are arranged in the order of the auxiliary emitter external terminal 114, the gate external terminal 112, the auxiliary emitter external terminal 124, and the gate external terminal 122 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of FIG. 11C will be particularly described. The gate external terminal 112 of this example is provided closer to the switching element 20 than the auxiliary emitter external terminal 114.

[0164] The auxiliary emitter circuit plate Ce1 is provided on the positive side in the Y-axis direction relative to the switching element 20. In this example, the auxiliary emitter circuit plate Ce1 has an L-shape, but is not limited to this. The auxiliary emitter circuit plate Ce1 has a region closer to the switching element 20 than the gate control wire Wg5. In the region of the auxiliary emitter circuit plate Ce1 closer to the switching element 20 than the gate control wire Wg5, the auxiliary emitter current Ie flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0165] Fig. 11E is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 11A in that the positions of the positive electrode terminal 132 and the negative electrode terminal 134 are interchanged. The positive electrode terminal 132 of this example is disposed on the negative side in the X-axis direction relative to the negative electrode terminal 134. In this example, the differences from the embodiment of Fig. 11A will be particularly described.

[0166] The gate circuit board Cg1 and the gate circuit board Cg2 are disposed on the negative side of the switching element 20 in the Y-axis direction, sandwiching the auxiliary emitter circuit board Ce1. The auxiliary emitter circuit board Ce1 extends in the X-axis direction on the negative side of the switching element 20 in the Y-axis direction. The gate control wire Wg5 extends substantially in the X-axis direction beyond the upper part of the auxiliary emitter circuit board Ce1. A circuit board 152 such as the second circuit board 21 may be disposed on the negative side of the gate circuit board Cg1 and the gate circuit board Cg2 in the Y-axis direction.

[0167] In this example, the negative terminal 134 is disposed on the positive side in the X-axis direction relative to the positive terminal 132, and when the switching element 10 disposed in the lower arm is energized, a reverse recovery current Irr toward the positive side in the X-axis direction is generated in the upper arm. Meanwhile, an auxiliary emitter current Ie toward the negative side in the X-axis direction flows in the auxiliary emitter circuit board Ce1. Therefore, the auxiliary emitter current Ie adjacent to the switching element 20 flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0168] 11F is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of FIG. 11E in that the control terminals are arranged in the order of EGEG. That is, the control terminals are arranged in the order of the auxiliary emitter external terminal 124, the gate external terminal 122, the auxiliary emitter external terminal 114, and the gate external terminal 112 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of FIG. 11E will be particularly described. The gate external terminal 112 of this example is provided farther away from the switching element 20 than the auxiliary emitter external terminal 114.

[0169] The gate circuit plate Cg1 and the gate circuit plate Cg2 are disposed on the negative side of the switching element 20 in the Y-axis direction, sandwiching the auxiliary emitter circuit plate Ce1. The auxiliary emitter circuit plate Ce1 extends in the X-axis direction on the negative side of the switching element 20 in the Y-axis direction. The auxiliary emitter circuit plate Ce1 has a region closer to the switching element 20 than the gate control wire Wg5. In the region of the auxiliary emitter circuit plate Ce1 closer to the switching element 20, the auxiliary emitter current Ie flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0170] Fig. 11G is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 11E in that the gate external terminal 112 and the auxiliary emitter external terminal 114 are disposed on the positive side in the Y-axis direction relative to the gate external terminal 122 and the auxiliary emitter external terminal 124. The control terminals of this example are disposed in the order of the gate external terminal 112, the auxiliary emitter external terminal 114, the gate external terminal 122, and the auxiliary emitter external terminal 124 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of Fig. 11E will be particularly described.

[0171] The gate circuit board Cg1 and the gate circuit board Cg2 are disposed on the positive side in the Y-axis direction from the switching element 20, sandwiching the auxiliary emitter circuit board Ce1. The auxiliary emitter circuit board Ce1 extends in the X-axis direction on the positive side in the Y-axis direction from the switching element 20. The auxiliary emitter circuit board Ce1 of this example has a region closer to the switching element 20 than the gate control wire Wg5. In the region of the auxiliary emitter circuit board Ce1 closer to the switching element 20 than the gate control wire Wg5, the auxiliary emitter current Ie flows anti-parallel to the reverse recovery current Irr, and the current path is wired so that the gate current Ig and the auxiliary emitter current Ie increase overall.

[0172] Fig. 11H is an enlarged view of a modified example of the semiconductor assembly 102. This example differs from the embodiment of Fig. 11G in that the control terminals are arranged in the order of EGEG. That is, the control terminals are arranged in the order of the auxiliary emitter external terminal 114, the gate external terminal 112, the auxiliary emitter external terminal 124, and the gate external terminal 122 toward the negative side in the Y-axis direction. In this example, the differences from the embodiment of Fig. 11G will be particularly described.

[0173] The gate circuit plate Cg1 and the gate circuit plate Cg2 are disposed on the positive side of the switching element 20 in the Y-axis direction. The auxiliary emitter circuit plate Ce1 extends in the X-axis direction between the gate circuit plate Cg1 and the gate circuit plate Cg2. A circuit plate 152 such as the second circuit plate 21 may be provided on the positive side of the auxiliary emitter circuit plate Ce2 in the Y-axis direction. A circuit plate 152 such as the second circuit plate 21 may be provided on the negative side of the switching element 20 in the Y-axis direction.

[0174] Although the present invention has been described above using the embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It is clear to those skilled in the art that various modifications and improvements can be made to the above embodiments. It is clear from the claims that such modifications and improvements can also be included in the technical scope of the present invention.

[0175] It should be noted that the order of execution of each process, such as operations, procedures, steps, and stages, in the devices, systems, programs, and methods shown in the claims, specifications, and drawings is not specifically indicated as "before," "prior to," etc., and may be realized in any order unless the output of a previous process is used in a later process. Even if the operational flow in the claims, specifications, and drawings is explained using "first," "next," etc. for convenience, it does not mean that it is essential to perform the process in this order. [Explanation of symbols]

[0176] REFERENCE SIGNS LIST 10 switching element, 11 first circuit board, 12 gate wiring member, 14 auxiliary emitter wiring member, 17 gate electrode, 19 emitter electrode, 20 switching element, 21 second circuit board, 27 gate electrode, 29 emitter electrode, 31 third circuit board, 41 fourth circuit board, 100 semiconductor module, 102 semiconductor assembly, 104 housing, 110 output Terminal, 112...gate external terminal, 114...auxiliary emitter external terminal, 122...gate external terminal, 124...auxiliary emitter external terminal, 132...positive terminal, 134...negative terminal, 150...laminated substrate, 151...insulating plate, 152...circuit board, 153...metal plate, 200...load, 210...driver, 500...semiconductor module, 512...gate wiring member, 514...auxiliary emitter wiring member

Claims

1. a reverse conducting first switching element provided in one of the upper arm or the lower arm; a second switching element in reverse conduction provided in the other of the upper arm or the lower arm; a first path member electrically connected to one of a gate electrode or an emitter electrode of the first switching element; a second path member electrically connected to the other of the gate electrode or the emitter electrode of the first switching element; Equipped with the first path member is provided closer to the second switching element than the second path member is, a current flowing through the first path member flows anti-parallel to a reverse recovery current of an arm in which the second switching element is provided, The first path member, the first switching element, and the second switching element are disposed on a same insulating substrate. Semiconductor module.

2. the first path member is a gate wiring member electrically connected to the gate electrode of the first switching element, The second path member is an auxiliary emitter wiring member electrically connected to the emitter electrode of the first switching element. The semiconductor module according to claim 1 .

3. the first path member is an auxiliary emitter wiring member electrically connected to the emitter electrode of the first switching element, The second path member is a gate wiring member electrically connected to the gate electrode of the first switching element. The semiconductor module according to claim 1 .

4. the first path member and the second path member each include a conductive circuit board; The circuit board of the first path member is provided between the circuit board of the second path member and the second switching element in a top view. The semiconductor module according to claim 1 .

5. the first path member includes a conductive circuit board; The second path member includes a conductive wire member, The circuit board of the first path member is provided closer to the second switching element than the wire member of the second path member. The semiconductor module according to claim 1 .

6. a gate external terminal electrically connected to the gate electrode of the first switching element via the first path member or the second path member; an auxiliary emitter external terminal electrically connected to the emitter electrode of the first switching element via the first path member or the second path member; Equipped with The gate external terminal is provided closer to the second switching element than the auxiliary emitter external terminal. The semiconductor module according to claim 1 .

7. a gate external terminal electrically connected to the gate electrode of the first switching element via the first path member or the second path member; an auxiliary emitter external terminal electrically connected to the emitter electrode of the first switching element via the first path member or the second path member; Equipped with The gate external terminal is provided farther away from the second switching element than the auxiliary emitter external terminal. The semiconductor module according to claim 1 .

8. an output terminal provided on a predetermined side of the semiconductor module; The gate external terminal and the auxiliary emitter external terminal are provided on a side opposite to a side on which the output terminal is provided. The semiconductor module according to claim 6 .

9. a positive terminal and a negative terminal provided on a predetermined side of the semiconductor module; The positive electrode terminal and the negative electrode terminal are provided on a side perpendicular to a side on which the gate external terminal and the auxiliary emitter external terminal are provided. The semiconductor module according to claim 6 .

10. The first switching element and the second switching element are each configured as one chip. The semiconductor module according to claim 1 .

11. The first switching element and the second switching element are either an RC-IGBT, an element in which a SiC-MOS and a SiC-SBD are integrated, or an element in which a body diode of a SiC-MOS functions as a freewheeling diode. The semiconductor module according to claim 10.

12. A gate wiring member electrically connected to the gate electrode of the first switching element is longer than a gate wiring member electrically connected to the gate electrode of the second switching element. The semiconductor module according to claim 1 .

13. The auxiliary emitter wiring member electrically connected to the emitter electrode of the first switching element is longer than the auxiliary emitter wiring member electrically connected to the emitter electrode of the second switching element. The semiconductor module according to claim 1 .

14. A plurality of legs, each of which is composed of an upper arm and a lower arm; a plurality of laminate substrates for arranging the plurality of legs; Equipped with The plurality of legs are disposed on the plurality of laminated substrates, respectively. The semiconductor module according to claim 1 .

15. A plurality of legs, each of which is composed of an upper arm and a lower arm; a laminated substrate for arranging the plurality of legs; Equipped with The plurality of legs are disposed on a common laminate substrate. The semiconductor module according to claim 1 .

16. A semiconductor module comprising: a reverse conducting first switching element provided in one of the upper arm or the lower arm; a second switching element in reverse conduction provided in the other of the upper arm or the lower arm; a first path member electrically connected to one of a gate electrode or an emitter electrode of the first switching element; a second path member electrically connected to the other of the gate electrode or the emitter electrode of the first switching element; a gate external terminal electrically connected to the gate electrode of the first switching element via one of the first path member or the second path member; an auxiliary emitter external terminal electrically connected to the emitter electrode of the first switching element via the other of the first path member or the second path member; a positive terminal and a negative terminal provided on a predetermined side of the semiconductor module; Equipped with the first path member is provided closer to the second switching element than the second path member is, a current flowing through the first path member flows anti-parallel to a reverse recovery current of an arm in which the second switching element is provided, The positive electrode terminal and the negative electrode terminal are provided on a side perpendicular to a side on which the gate external terminal and the auxiliary emitter external terminal are provided. Semiconductor module.

17. The first path member is a gate wiring member electrically connected to the gate electrode of the first switching element, The second path member is an auxiliary emitter wiring member electrically connected to the emitter electrode of the first switching element. The semiconductor module according to claim 16.

18. The first path member is an auxiliary emitter wiring member electrically connected to the emitter electrode of the first switching element, The second path member is a gate wiring member electrically connected to the gate electrode of the first switching element. The semiconductor module according to claim 16.

19. The first path member and the second path member have a conductive circuit board, The circuit board of the first path member is provided between the circuit board of the second path member and the second switching element in a top view. The semiconductor module according to any one of claims 16 to 18.

20. The first path member has a conductive circuit board, The second path member includes a conductive wire member, The circuit board of the first path member is provided closer to the second switching element than the wire member of the second path member. The semiconductor module according to any one of claims 16 to 18.

21. The gate external terminal is provided closer to the second switching element than the auxiliary emitter external terminal. The semiconductor module according to any one of claims 16 to 18.

22. The gate external terminal is provided farther away from the second switching element than the auxiliary emitter external terminal. The semiconductor module according to any one of claims 16 to 18.

23. An output terminal provided on a predetermined side of the semiconductor module, The gate external terminal and the auxiliary emitter external terminal are provided on a side opposite to a side on which the output terminal is provided. The semiconductor module according to claim 21.

24. The first switching element and the second switching element are each configured as a single chip. The semiconductor module according to any one of claims 16 to 18.

25. The first switching element and the second switching element are either an RC-IGBT, an element in which a SiC-MOS and a SiC-SBD are integrated, or an element in which a body diode of a SiC-MOS functions as a freewheeling diode. The semiconductor module according to claim 24. A gate wiring member electrically connected to the gate electrode of the first switching element is longer than a gate wiring member electrically connected to the gate electrode of the second switching element. The semiconductor module according to any one of claims 16 to 18.

27. ​​The auxiliary emitter wiring member electrically connected to the emitter electrode of the first switching element is longer than the auxiliary emitter wiring member electrically connected to the emitter electrode of the second switching element. The semiconductor module according to any one of claims 16 to 18.

28. A plurality of legs, each of which is composed of an upper arm and a lower arm; a plurality of laminate substrates for arranging the plurality of legs; Equipped with The plurality of legs are disposed on the plurality of laminated substrates, respectively. The semiconductor module according to any one of claims 16 to 18.

29. A plurality of legs, each of which is composed of an upper arm and a lower arm; a laminated substrate for arranging the plurality of legs; Equipped with The plurality of legs are disposed on a common laminate substrate. The semiconductor module according to any one of claims 16 to 18.

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