Display panel and manufacturing method thereof

Abstract

The display panel includes a thin film transistor, an anode, and a bonding pad. The thin film transistor includes a source, a drain, and a gate. The anode is electrically connected to the thin film transistor. The material of the anode includes a silver-palladium-copper alloy. The bonding pad is electrically connected to the thin film transistor. The material of the bonding pad is the same as the material of the anode. The material of the anode is an alloy material formed by adding an appropriate proportion of silver, palladium, and copper metal elements, so that the ability of the entire material to withstand the erosion of other elements, such as water vapor resistance, high temperature resistance, sulfurization resistance, and oxidation resistance, can be improved.

Description

[Technical field]

[0001] The present invention relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof. [Background technology]

[0002] In the display panel of the prior art, copper (Cu) or copper alloy is used as metal wiring because of its good conductive performance. The metal wiring is used to electrically connect the flexible circuit board outside the display panel in addition to being the circuit wiring of the thin film transistor of the display panel, to realize the access of external signals. However, since the material of the metal wiring is a material such as copper or copper alloy that easily reacts with oxygen and water vapor in air, a part of the metal wiring exposed to the outside of the display panel for electrically connecting to the flexible circuit board is easily oxidized, which further affects the bonding effect between the display panel and the flexible circuit board. Summary of the Invention [Problem to be solved by the invention]

[0003] In the prior art, to solve the above technical problem, a material with relatively low activity and corrosion resistance, such as molybdenum (Mo) or a molybdenum alloy, is used as a bonding pad to cover the exposed part of the metal wiring, thereby blocking the reaction between the metal wiring and oxygen and water vapor in the air. However, this structural design increases the manufacturing process of the display panel, and increases the manufacturing time and manufacturing cost of the display panel.

[0004] The anode of the display panel adopts a material having high reflectivity, such as silver (Ag) or a composite laminate containing silver. However, during the manufacturing process of the display panel, such a material is easily reacted with oxygen in air, water vapor, or compounds used in the manufacturing process, so that the anode, which is temporarily exposed during the manufacturing process, is easily oxidized (O) or sulfurized (S). After the anode deteriorates, it may break or short circuit with the cathode of the display panel, which may invalidate the pixels of the display panel and affect the display effect of the pixels of the display panel.

[0005] The above-mentioned display panels of the prior art have technical problems in that the metal wiring is easily oxidized, the anode is easily oxidized or sulfurized, and the manufacturing process is relatively complicated. Therefore, in order to solve the above technical problems, a display panel having a material that uses a corrosion-resistant metal as the anode and bonding pad is required. [Means for solving the problem]

[0006] The present invention provides a display panel having a material with corrosion-resistant metal as an anode and a bonding pad. The display panel includes a thin film transistor, an anode, and a bonding pad. The thin film transistor includes a source, a drain, and a gate. The anode is electrically connected to the thin film transistor. The material of the anode includes a silver-palladium-copper alloy. The bonding pad is electrically connected to the thin film transistor. The material of the bonding pad is the same as the material of the anode.

[0007] In one embodiment, the anode further comprises a transparent conductive oxide provided on two opposing surfaces of the silver-palladium-copper alloy.

[0008] In one embodiment, the bonding pad further comprises a transparent conductive oxide disposed on two opposing surfaces of the silver-palladium-copper alloy.

[0009] In one embodiment, the transparent conductive oxide includes indium oxide, antimony oxide, or cadmium oxide.

[0010] In the embodiment, the display panel further includes a passivation layer disposed on the thin film transistor to cover the thin film transistor, the passivation layer including a first through hole formed in the thin film transistor.

[0011] In the present embodiment, the display panel further includes a planarization layer, the planarization layer being disposed on the passivation layer, the planarization layer including a second through hole corresponding to the first through hole, and the anode passing through the first through hole and the second through hole and electrically connected to the thin film transistor.

[0012] In this embodiment, the first through hole and the second through hole are formed by two manufacturing processes respectively.

[0013] In this embodiment, the display panel further includes a metal wiring, the metal wiring is provided in the same layer as the source and the drain of the thin film transistor, and the bonding pad is electrically connected to the thin film transistor via the metal wiring.

[0014] In the present embodiment, the passivation layer further includes a third through hole opened in the metal wiring, and the bonding pad is electrically connected to the metal wiring through the third through hole.

[0015] In this embodiment, the first through hole and the third through hole are formed in the same manufacturing process.

[0016] In one embodiment, the thin film transistor comprises a top-gate thin film transistor.

[0017] In one embodiment, the display panel is an organic light emitting diode display panel, and the anode is an organic light emitting diode anode.

[0018] The present invention further provides a method for manufacturing a display panel having a material with a corrosion-resistant metal as an anode and a bonding pad, the method comprising the steps of: forming a thin film transistor and metal wiring, the thin film transistor including a source, a drain, and a gate, the metal wiring being formed in the same layer as the source and the drain of the thin film transistor; and simultaneously forming an anode and a bonding pad electrically connected to the thin film transistor, wherein a material of the anode comprises a silver-palladium-copper alloy and a material of the bonding pad is the same as the material of the anode.

[0019] In one embodiment, the step of forming an anode and a bonding pad electrically connected to the thin film transistor includes: The method further includes the step of forming the anode and the bonding pad by sequentially stacking a transparent conductive oxide, the silver-palladium-copper alloy, and a transparent conductive oxide.

[0020] In this embodiment, the transparent conductive oxide includes indium oxide, antimony oxide or cadmium oxide.

[0021] In one embodiment, after the step of forming the thin film transistor, forming a passivation layer on the thin film transistor; forming a planarization layer on the passivation layer; forming a second through hole in the planarization layer; The method further includes opening a first through hole in the passivation layer corresponding to a position of the second through hole.

[0022] The anode passes through the first through hole and the second through hole and is electrically connected to the thin film transistor.

[0023] In this embodiment, the step of opening a first through hole in the passivation layer corresponding to the position of the second through hole includes: The method further includes opening a third through hole in the passivation layer simultaneously with the first through hole.

[0024] The bonding pad passes through the third through hole and is electrically connected to the metal wiring.

[0025] In one embodiment, the thin film transistor comprises a top-gate thin film transistor.

[0026] In one embodiment, the display panel is an organic light emitting diode display panel, and the anode is an organic light emitting diode anode. Effect of the Invention

[0027] The display panel according to the present invention includes the thin film transistor, the anode, and the bonding pad. The thin film transistor includes the source, the drain, and the gate. The anode is electrically connected to the thin film transistor. The bonding pad is electrically connected to the thin film transistor. The material of the anode includes a laminate of the transparent conductive oxide / silver-palladium-copper alloy / transparent conductive oxide. The material of the bonding pad is the same as the material of the anode. Since the present invention adopts the laminate of the transparent conductive oxide / silver-palladium-copper alloy / transparent conductive oxide as the anode and the bonding pad, the present invention can avoid the problem that the anode and the bonding pad are oxidized (O) or sulfurized (S) and become ineffective, and can also avoid the problem that the anode may be broken or short-circuited with the cathode of the display panel due to deterioration. At the same time, the present invention can reduce the manufacturing process of the display panel in the prior art, and further reduce the manufacturing time and manufacturing cost of the display panel. [Brief description of the drawings]

[0028] [Figure 1] FIG. 2 is a structural schematic diagram of a display panel of the present invention. [Diagram 2] 3A to 3C are structural schematic diagrams illustrating a manufacturing process of the display panel of the present invention. [Diagram 3] 3A to 3C are structural schematic diagrams illustrating a manufacturing process of the display panel of the present invention. [Figure 4] 3A to 3C are structural schematic diagrams illustrating a manufacturing process of the display panel of the present invention. [Diagram 5] 3A to 3C are structural schematic diagrams illustrating a manufacturing process of the display panel of the present invention. [Figure 6] 3A to 3C are structural schematic diagrams illustrating a manufacturing process of the display panel of the present invention. [Figure 7] 3A to 3C are structural schematic diagrams illustrating a manufacturing process of the display panel of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0029] In order to make the above and other objects, features and advantages of the present invention more apparent, preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0030] Referring to Fig. 1, there is shown a structural schematic diagram of a display panel 100 of the present invention. The display panel 100 includes a thin film transistor 200, which includes a source 210, a drain 220, a gate 230, a channel 240 and a gate insulating layer 250 as a driving switch for making a pixel of the display panel 100 emit light. By controlling the input voltage of the gate 230, the thin film transistor 200 can control the on / off of the current between the source 210 and the drain 220.

[0031] As shown in FIG. 1, the display panel 100 further includes an anode 300, a light-emitting layer 130, and a cathode 600. The light-emitting layer 130 is disposed between the anode 300 and the cathode 600. The anode 300 is disposed in a pair with the cathode 600. At the same time, the anode 300 is electrically connected to one of the source 210 and the drain 220 of the thin film transistor 200. Therefore, when the thin film transistor 200 controls the on / off of the current between both ends of the source 210 and the drain 220, when a current or an electric field is generated between the anode 300 and the cathode 600, the light-emitting layer 130 operates based on the current.

[0032] In one embodiment, the display panel 100 further includes a planarization layer 800 and a passivation layer 700. The planarization layer 800 is disposed on the passivation layer 700. The passivation layer 700 includes a first through hole 710 opened in one of the source 210 and the drain 220 of the thin film transistor 200. The planarization layer 800 includes a second through hole 810 corresponding to the first through hole 710. The anode 300 is electrically connected to one of the source 210 and the drain 220 of the thin film transistor 200 through the first through hole 710 and the second through hole 810.

[0033] In one embodiment, the display panel 100 of the present invention includes an organic light-emitting diode (OLED) display panel. In other words, the anode 300, the light-emitting layer 130 and the cathode 600 together constitute an organic light-emitting diode. The light-emitting layer 130 further includes a hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer and an electron injection layer. When the thin film transistor 200 controls the current to flow through the anode 300, the current is generated between the anode 300 and the cathode 600. Under the action of the current, the electrons and holes in the light-emitting layer 130 are combined in the light-emitting material layer and excited with light, thereby achieving the bright and dark display of the pixel of the display panel 100. It should be noted that the cathode 600 of the present invention includes an electrode material provided on the entire surface, so that the cathode 600 is manufactured on the light-emitting layer 130 by a deposition process, which can further simplify the structure and manufacturing process of the display panel 100.

[0034] The light-emitting layer 130 of the present invention is not limited to the above embodiment. In other embodiments, the light-emitting layer 130 may include electroluminescent quantum dots (ELQDs), mini-light-emitting diodes (LED-LEDs), micro-light-emitting diodes (micro-LEDs), etc.

[0035] Hereinafter, a specific embodiment of the present invention will be further described by taking the display panel 100 as an organic light emitting diode display panel as an example.

[0036] As shown in FIG. 1, the channel 240 of the thin film transistor 200 is electrically connected to the source 210 and the drain 220. In one embodiment, the channel 240 is made of a semiconductor material, in particular indium gallium zinc oxide (IGZO). The electron mobility of the indium gallium zinc oxide used in this embodiment is 20 to 30 times that of a conventional amorphous silicon semiconductor, so that the charge / discharge speed and response speed of the thin film transistor 200 are significantly improved. By using the indium gallium zinc oxide as the channel of the thin film transistor 200, a faster refresh rate of the display panel 100 can be realized. At the same time, the indium gallium zinc oxide has a relatively high driving capability, so that the driving power consumption of the thin film transistor 200 is reduced, which makes the display panel more energy-saving and power-saving, and greatly increases the durability of the display panel.

[0037] As shown in FIG. 1, in one embodiment, the thin film transistor 200 includes a top-gate thin film transistor. In other words, in the structural design of the thin film transistor 200, the channel 240 is the bottom layer, and the gate is the top layer. The top-gate thin film transistor can reduce the manufacturing process of the display panel 100, and further reduce the manufacturing cost. It should be noted that the thin film transistor 200 of the present invention is not limited to the top-gate thin film transistor, and may be a bottom-gate thin film transistor or a thin film transistor with other structures.

[0038] In the present invention, the material of the anode 300 includes silver (Ag)-palladium (Pd)-copper (Cu) alloy (APC alloy). The material of the anode 300 is an alloy material formed by adding appropriate proportions of silver, palladium and copper metal elements, so that the ability of the entire material to withstand corrosion by other elements, such as water vapor resistance, high temperature resistance, sulfur (S) resistance and acid (O) resistance, can be improved.

[0039] In one embodiment, the material of the anode 300 further includes a transparent conductive oxide (TCO) / silver-palladium-copper alloy / transparent conductive oxide stack. Furthermore, the transparent conductive oxide / silver-palladium-copper alloy / transparent conductive oxide stack is fabricated by successively depositing materials by a magnetron sputtering process of physical vapor deposition (PVD). The fabrication method of the transparent conductive oxide / silver-palladium-copper alloy / transparent conductive oxide stack of the present invention is not limited thereto, and may be other methods in the physical vapor deposition, and may even be chemical vapor deposition (CVD), etc. In this embodiment, the transparent conductive oxide is a thin film material including indium oxide, antimony oxide, or cadmium oxide, etc., which matches the properties of polyvalent oxide materials.

[0040] 1, in one embodiment, the display panel 100 of the present invention further includes a bonding pad 400 and a metal wiring 500. The metal wiring 500 is provided in the same layer as the source 210 and the drain 220 of the thin film transistor 200, and is used to transmit power and signals, such as Vdd and Vss, required when the display panel 100 operates. Since the display panel 100 employs chip on film (COF) technology to achieve a narrow frame design, the metal wiring 500 is electrically connected to the bonding pad 400 at the side edge region of the display panel 100 so that a flexible circuit board of the chip on film is bonded to the metal wiring 500.

[0041] In this embodiment, the passivation layer 700 further includes a third through hole 720 formed in the metal line 500. The bonding pad 400 is electrically connected to the metal line 500 through the third through hole 720.

[0042] In this embodiment, the bonding pad 400 is electrically connected to one of the source 210, the drain 220, and the gate 230 of the thin film transistor 200 and the cathode 600 of the display panel 100 through the metal wiring 500. It should be noted that in actual implementation, the display panel 100 includes a plurality of the thin film transistors 200, a plurality of the metal wirings 500, and a plurality of the bonding pads 400. The power supply and the signals required when the display panel 100 operates are all accessed from a chip-on-film flexible circuit board outside the display panel 100 through each of the bonding pads 400, and transmitted to the cathode 600 of the display panel 100, the sources 210, the drains 220, and the gates 230 of each of the thin film transistors 200.

[0043] In this embodiment, the material of the bonding pad 400 is the same as the material of the anode 300. In other words, the material of the bonding pad 400 also includes the silver-palladium-copper alloy. The material of the bonding pad 400 is an alloy material formed by adding an appropriate proportion of silver, palladium and copper metal elements, which can improve the ability of the entire material to resist corrosion by other elements, such as water vapor resistance, high temperature resistance, sulfurization resistance and oxidation resistance, and can prevent the metal wiring 500 adopting copper or copper alloy from being oxidized due to direct contact with air.

[0044] More importantly, in addition to the above technical advantages, since the bonding pad 400 and the anode 300 are configured to be manufactured using the same material, the bonding pad 400 can be formed in the same manufacturing process as the anode 300. Therefore, compared with the display panel of the prior art which adds one manufacturing step to fabricate the bonding pad using molybdenum (Mo) or a molybdenum alloy, the present invention can reduce one manufacturing step of the display panel 100, and greatly reduce the manufacturing time and manufacturing cost of the display panel 100.

[0045] According to the inventors' experiments, the anode 300 and the bonding pad 400 using the transparent conductive oxide / silver-palladium-copper alloy / transparent conductive oxide stack can still maintain the required operational performance and material properties and avoid corrosion by other elements such as sulfurization and oxidation even after 500 hours of continuous testing in a harsh environment reliability analysis (RA) of high temperature (60°C) and high humidity (90RH).

[0046] In addition, the present invention further provides a manufacturing method of the above-mentioned display panel 100. Please refer to Figures 2 to 7, which are structural schematic diagrams of the manufacturing process of the above-mentioned display panel 100 of the present invention.

[0047] 2, in the manufacturing process of the display panel 100, first, a buffer layer 120 is formed on a lower glass substrate 110. Then, the channel 240, the gate insulating layer 250, the gate 230, the source 210 and the drain 220 are sequentially provided on the buffer layer 120, thereby forming the thin film transistor 200 of the display panel 100.

[0048] In one embodiment, the metal wiring 500 and the source 210 and the drain 220 of the thin film transistor 200 are formed in the same manufacturing process and are electrically connected to each other. The metal wiring 500 is used to transmit power and signals required during operation of the display panel 100.

[0049] 2, after the source 210, the drain 220 and the metal wiring 500 are formed, the passivation layer 700 is formed thereon. The passivation layer 700 covers the source 210 and the drain 220 of the thin film transistor 200. The passivation layer 700 not only has an insulating effect, but also provides the display panel 100 with toughness when bent, thereby protecting the display panel 100.

[0050] 3, the present invention then forms the planarization layer 800 on the passivation layer 700. It should be noted that the planarization layer 800 does not cover the side edge region of the display panel 100 when the planarization layer 800 is formed. Since the display panel 100 adopts a chip-on-film technology to achieve a narrow frame design, a space must be reserved in advance in the side edge region of the display panel 100 for bonding the flexible circuit board of the chip-on-film with the metal wiring 500.

[0051] 4, the planarization layer 800 is then patterned. The present invention opens the second through-hole 810 at a position of the planarization layer 800 corresponding to one of the source 210 and the drain 220 of the thin film transistor 200, thereby exposing the passivation layer 700 located under the second through-hole 810.

[0052] As shown in FIG. 5, the passivation layer 700 is then patterned. The present invention exposes one of the source 210 and the drain 220 of the thin film transistor 200 by opening the first through hole 710 at a position corresponding to the second through hole 810 of the passivation layer 700. At the same time, the present invention also exposes the metal wiring 500 located under the passivation layer 700 by opening the third through hole 720 at a position corresponding to the metal wiring 500 of the passivation layer 700. In other words, the first through hole 710 and the third through hole 720 are opened by the same manufacturing process. The third through hole 720 is located in the side edge region of the display panel 100, i.e., provides an area for bonding the flexible circuit board of the chip-on-film and the metal wiring 500.

[0053] Since the anode 300 formed thereafter needs to pass through the planarization layer 800 and the passivation layer 700 at once and be electrically connected to one of the source 210 and the drain 220 of the thin film transistor 200, the display panel 100 needs to provide a through hole penetrating the planarization layer 800 and the passivation layer 700. However, the method of forming the through hole in the prior art is as follows. First, after forming the passivation layer 700, a temporary through hole penetrating the passivation layer 700 is first opened, then the planarization layer 800 is formed on the passivation layer 700 to fill the temporary through hole, and finally, the planarization layer 800 is exposed and developed at once to open a deep hole penetrating the planarization layer 800 and the temporary through hole at once. As can be understood, when the deep hole is opened, the manufacturing process is very difficult, and if the exposure is incomplete, the material of the planarization layer 800 may remain in the deep hole, which may result in incomplete opening of the deep hole and cause problems such as poor electrical signal transmission in the subsequently formed anode 300.

[0054] In this embodiment, the first through hole 710 and the second through hole 810 are formed by two manufacturing processes. First, the second through hole 810 is formed in the planarization layer 800, and then the first through hole 710 is formed in the passivation layer 700 corresponding to the second through hole 810, thereby forming the deep hole in the planarization layer 800. Therefore, the problem in the prior art that the material of the planarization layer 800 remains in the second through hole 810 and the first through hole 710 can be avoided. Therefore, the present invention can improve the yield of electrically connecting the anode 300 to one of the source 210 and the drain 220 of the thin film transistor 200.

[0055] At the same time, the deep hole is sequentially opened by sequentially opening the second through hole 810 and the first through hole 710, which are overlapped in the planarization layer 800 and the passivation layer 700. After the second through hole 810 is opened in the planarization layer 800, the planarization layer 800 is further subjected to a manufacturing process of high temperature baking. Since the first through hole 710 is not opened in the passivation layer 700, the source 210 and the drain 220 of the thin film transistor 200 can be protected from erosion of other elements such as oxidation.

[0056] 6, the anode 300 and the bonding pad 400 are then formed on the planarization layer 800 and the passivation layer 700. The anode 300 is electrically connected to one of the source and the drain of the thin film transistor through the first through hole 710 and the second through hole 810. Also, the bonding pad 400 is electrically connected to the metal wiring 500 through the third through hole 720.

[0057] In this embodiment, the material of the bonding pad 400 is the same as the material of the anode 300. In other words, the material of the bonding pad 400 also includes the silver-palladium-copper alloy. The material of the bonding pad 400 is an alloy material formed by adding an appropriate proportion of silver, palladium and copper metal elements, which can improve the ability of the entire material to resist corrosion by other elements, such as water vapor resistance, high temperature resistance, sulfurization resistance and oxidation resistance, and can prevent the metal wiring 500 adopting copper or copper alloy from being oxidized due to direct contact with air.

[0058] More importantly, in addition to the above technical advantages, since the bonding pad 400 and the anode 300 are configured to be manufactured using the same material, the bonding pad 400 can be formed in the same manufacturing process as the anode 300. Therefore, compared with the display panel of the prior art which adds one manufacturing step to fabricate the bonding pad using molybdenum or molybdenum alloy, the present invention can reduce one manufacturing step of the display panel 100, and greatly reduce the manufacturing time and manufacturing cost of the display panel 100.

[0059] As shown in FIG. 7, after the anode 300 and the bonding pad 400 are formed, the present invention then sequentially forms the light emitting layer 130, the pixel defining layer 140, the cathode 600 and the upper glass substrate 150 to complete the manufacture of the display panel 100.

[0060] The display panel 100 according to the present invention includes the thin film transistor 200, the anode 300, and the bonding pad 400. The thin film transistor includes the source 210, the drain 220, and the gate 230. The anode 300 is electrically connected to one of the source 21 and the drain 220 of the thin film transistor 200. The bonding pad 400 is electrically connected to one of the source 210, the drain 220, and the gate 230 of the thin film transistor 200 and the cathode 600 of the display panel 100. The material of the anode 300 includes a stack of the transparent conductive oxide / silver-palladium-copper alloy / transparent conductive oxide. The material of the bonding pad 400 is the same as the material of the anode 300. Since the present invention adopts the transparent conductive oxide / silver-palladium-copper alloy / transparent conductive oxide laminate as the anode 300 and the bonding pad 400, the present invention can avoid the problem of the anode 300 and the bonding pad 400 being oxidized (O) or sulfurized (S) and becoming ineffective, and can also avoid the problem of the anode 300 being deteriorated and possibly disconnected or short-circuited with the cathode 600 of the display panel 100. At the same time, the present invention can reduce the manufacturing process of the display panel in the prior art, increase the yield of electrically connecting the anode 300 to one of the source 210 and the drain 220 of the thin film transistor 200, and further reduce the manufacturing time and manufacturing cost of the display panel.

[0061] The above description is only the preferred embodiments of the present invention. It should be noted that those skilled in the art can make several improvements and modifications without departing from the principle of the present invention, and these improvements and modifications should also be regarded as within the protection scope of the present invention. [Explanation of symbols]

[0062] 100 Display Panel 110 Lower glass substrate 120 Buffer layer 130 Light-emitting layer 140 Pixel Definition Layer 150 Upper glass substrate 200 Thin-film transistor 210 Source 220 Drain Gate 230 240 Channels 250 Gate insulation layer 300 Anode 400 Bonding Pads 500 metal wiring 600 cathode 700 Passivation Layer 710 First through hole 720 Third Through Hole 800 Planarization layer 810 Second through hole

Claims

1. A display panel, a thin film transistor including a source, a drain, and a gate; an anode electrically connected to the thin film transistor, the anode including a laminate of transparent conductive oxide, silver-palladium-copper alloy, and transparent conductive oxide in this order; a bonding pad electrically connected to the thin film transistor, the material of the bonding pad being the same as the material of the anode, the material of the bonding pad including a laminate formed in the order of a transparent conductive oxide, a silver-palladium-copper alloy, and a transparent conductive oxide; The display panel further includes metal wiring made of copper or a copper alloy, the metal wiring being provided in the same layer as the source and the drain of the thin film transistor, and the bonding pad being electrically connected to the thin film transistor via the metal wiring.

2. The display panel of claim 1 , wherein the transparent conductive oxide comprises indium oxide, antimony oxide or cadmium oxide.

3. The display panel of claim 1 , wherein the transparent conductive oxide comprises indium oxide, antimony oxide or cadmium oxide.

4. 2. The display panel of claim 1, wherein the display panel further includes a passivation layer, the passivation layer being provided on the thin film transistor to cover the thin film transistor, and the passivation layer including a first through hole opened in the thin film transistor.

5. The display panel further includes a planarization layer, the planarization layer being disposed on the passivation layer, the planarization layer including a second through hole corresponding to the first through hole, and The display panel according to claim 4 , wherein the anode is electrically connected to the thin film transistor through the first through hole and the second through hole.

6. 5. The display panel of claim 4, wherein the passivation layer further includes a third through hole opened in the metal wiring, and the bonding pad is electrically connected to the metal wiring through the third through hole.

7. The display panel of claim 1 , wherein the thin film transistor comprises a top-gate thin film transistor.

8. 2. The display panel of claim 1, wherein the display panel is an organic light emitting diode display panel, and the anode is an anode of an organic light emitting diode.

9. A method for manufacturing a display panel, comprising the steps of: forming a thin film transistor and a metal wiring using copper or a copper alloy, the thin film transistor including a source, a drain and a gate, the metal wiring being formed in the same layer as the source and the drain of the thin film transistor; simultaneously forming an anode and a bonding pad electrically connected to the thin film transistor, the material of the anode comprising a silver-palladium-copper alloy and the material of the bonding pad being the same as the material of the anode; forming an anode and a bonding pad electrically connected to the thin film transistor; The method further includes sequentially stacking a transparent conductive oxide, the silver-palladium-copper alloy, and a transparent conductive oxide to form the anode and the bonding pad; After the step of forming a thin film transistor, forming a passivation layer on the thin film transistor; forming a planarization layer on the passivation layer; forming a second through hole in the planarization layer; and opening a first through hole in the passivation layer corresponding to a position of the second through hole, the anode is electrically connected to the thin film transistor through the first through hole and the second through hole; The step of opening a first through hole in the passivation layer corresponding to a position of the second through hole includes: and opening a third through hole in the passivation layer at the same time as the first through hole, The bonding pad is electrically connected to the metal wiring through the third through hole.

10. The method for manufacturing a display panel according to claim 9 , wherein the transparent conductive oxide includes indium oxide, antimony oxide or cadmium oxide.

11. The method for manufacturing a display panel according to claim 9 , wherein the thin film transistor includes a top-gate thin film transistor.

12. The method for manufacturing a display panel according to claim 9 , wherein the display panel is an organic light-emitting diode display panel, and the anode is an anode of an organic light-emitting diode.

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