Gas delivery systems and methods

Abstract

The system may include a main line for delivering a first gas and a sensor for measuring a concentration of a precursor in the first gas delivered through the main line. The system may further include a first sub-line and a second sub-line for providing fluid access to each of the first and second processing chambers. The first sub-line may include a first flow controller for controlling the first gas flowing through the first sub-line. The second sub-line may include a second flow controller for controlling the first gas flowing through the second sub-line. The delivery controller may be configured to control the first and second flow controllers based on the measured concentrations of the precursor to deliver a first mixture of the first gas and the second gas and a second mixture of the first gas and the second gas to the first and second semiconductor processing chambers, respectively.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of priority to U.S. Patent Application No. 62 / 934,317, filed November 12, 2019, the contents of which are incorporated herein by reference in their entirety for all purposes. [Technical field]

[0002] The present technology relates to semiconductor processes and devices, and more particularly to semiconductor processing systems and methods for gas detection, control, and / or delivery. [Background technology]

[0003] Integrated circuits are made possible by processes that produce intricately patterned layers of materials on a substrate surface. As device dimensions continue to shrink in next generation devices, uniformity and precise control of processing conditions continue to become more important, and chamber design and system setup can play a key role in the quality of the devices produced. Thus, there is a need for systems and methods that can be used to create high quality devices and structures. Summary of the Invention

[0004] An embodiment of the present technology may include a method for precursor delivery. An exemplary method may include flowing a first gas through a first delivery main line. The first gas may include a precursor and a dilution gas. The first delivery main line may be fluidly connected to a first delivery sub-line and a second delivery sub-line downstream of the first delivery main line. The first delivery sub-line may be configured to provide fluid access from the first delivery main line to a first semiconductor processing chamber. The second delivery sub-line may be configured to provide fluid access from the first delivery main line to a second semiconductor processing chamber. The method may further include measuring a concentration of a precursor contained in the first gas delivered through the first delivery main line. The method may also include adjusting a first flow rate of the first gas delivered through the first delivery sub-line based at least in part on the measured concentration of the precursor, and adjusting a second flow rate of the first gas delivered through the second delivery sub-line based at least in part on the measured concentration of the precursor. The method may further include delivering a first mixture of the first gas and a second gas, which may include a diluent gas, delivered through the first delivery sub-line to a first semiconductor processing chamber according to a first recipe setpoint. The method may also include delivering a second mixture of the first gas and the second gas delivered through the second delivery sub-line to a second semiconductor processing chamber according to a second recipe setpoint. The first mixture and the second mixture may be delivered simultaneously to the first semiconductor processing chamber and the second semiconductor processing chamber, respectively.

[0005] In some embodiments, the precursor may include diborane. In some embodiments, the diluent gas may include hydrogen. In some embodiments, the concentration of the precursor may be measured using an optical absorption sensor. In some embodiments, the optical absorption sensor may include an elongated optical cell. The elongated optical cell may be configured to direct the first gas to flow through at least a portion of the elongated optical cell along a longitudinal axis of the elongated optical cell, while the concentration of the precursor contained in the first gas may be measured by the optical absorption sensor. In some embodiments, the optical absorption sensor may include an optical filter defining a first end of the elongated optical cell. The optical filter may be configured to filter the following wavenumbers: 1,600±100 cm -1 Or 2,520±100cm -1 In some embodiments, the light absorption sensor can include an optical window that defines a second end of the elongated optical cell. Light passing through the optical window and entering the elongated optical cell can be configured to allow infrared radiation having one or more of the following characteristics to pass therethrough: -1 and about 3,000 cm -1 This may include infrared radiation having wave numbers between .

[0006] In some embodiments, the first recipe set point may define a first concentration of a precursor contained in a first mixture of the first gas and the second gas. The second recipe set point may define a second concentration of a precursor contained in a second mixture of the first gas and the second gas. In some embodiments, the method may further include flowing the second gas through a second transmission main line. The second transmission main line may be fluidly connected to a third transmission sub-line and a fourth transmission sub-line downstream of the second transmission main line. The third transmission sub-line may be configured to provide fluid access from the second transmission main line to the first semiconductor processing chamber. The fourth transmission sub-line may be configured to provide fluid access from the second transmission main line to the second semiconductor processing chamber. The method may also include adjusting a first flow rate of the second gas delivered through the third delivery sub-line based at least in part on the measured concentration of the precursor, and adjusting a second flow rate of the second gas delivered through the fourth delivery sub-line based at least in part on the measured concentration of the precursor. In some embodiments, delivering a first mixture of the first gas and the second gas delivered through the first delivery sub-line may include delivering a first mixture of the first gas delivered through the first delivery sub-line and the second gas delivered through the third delivery sub-line. In some embodiments, delivering a second mixture of the first gas and the second gas delivered through the second delivery sub-line may include delivering a second mixture of the first gas delivered through the second delivery sub-line and the second gas delivered through the fourth delivery sub-line.

[0007] An embodiment of the present technology may include a system for precursor delivery. An exemplary precursor delivery system may include a first delivery main line configured to deliver a first gas and a precursor sensor configured to measure a concentration of a precursor contained in the first gas delivered through the first delivery main line. The precursor delivery system may also include a first delivery sub-line and a second delivery sub-line fluidly connected to the first delivery main line and downstream of the first delivery sub-line. The first delivery sub-line may be configured to provide fluid access from the first delivery main line to a first semiconductor processing chamber. The second delivery sub-line may be configured to provide fluid access from the first delivery main line to a second semiconductor processing chamber. The first delivery sub-line may include a first flow controller configured to control a first flow rate of the first gas flowing into the first semiconductor processing chamber. The second delivery sub-line may include a second flow controller configured to control a second flow rate of the first gas flowing into the second semiconductor processing chamber. The precursor delivery system may further include a precursor delivery controller communicatively connected to the precursor sensor, the first flow controller, and the second flow controller. The precursor delivery controller may be configured to control the first flow controller based on the measured concentration of the precursor to deliver a first mixture of the first gas and the second gas to the first semiconductor processing chamber according to a first recipe set point. The precursor delivery controller may further be configured to control the second flow controller based on the measured concentration of the precursor to deliver a second mixture of the first gas and the second gas to the second semiconductor processing chamber according to a second recipe set point.

[0008] In some embodiments, the precursor delivery system may be configured to simultaneously deliver the first mixture to a first semiconductor processing chamber and the second mixture to a second semiconductor processing chamber. In some embodiments, the precursor may include diborane and the first gas may further include hydrogen. The second gas may include hydrogen. In some embodiments, the precursor sensor may include an optical absorption sensor. In some embodiments, the optical absorption sensor may include an elongated optical cell, and the elongated optical cell may be configured to direct the first gas to flow through at least a portion of the elongated optical cell along a longitudinal axis of the elongated optical cell, while a concentration of the precursor contained in the first gas may be measured by the optical absorption sensor. In some embodiments, the optical absorption sensor may include an optical filter that defines a first end of the elongated optical cell. The optical filter may be configured to detect the following wavenumbers: 1,600±100 cm -1 Or 2,520±100cm -1 In some embodiments, the light absorption sensor can include an optical window that defines a second end of the elongated optical cell. Light passing through the optical window and entering the elongated optical cell can be configured to allow infrared radiation having one or more of the following characteristics to pass therethrough: -1 and about 3,000 cm -1 In some embodiments, the optical absorption sensor may further include at least one of a pressure sensor configured to measure a pressure within the elongated optical cell, or a temperature sensor configured to measure a temperature within the elongated optical cell.

[0009] In some embodiments, the precursor delivery system may further include a second delivery main line configured to deliver the second gas. The precursor delivery system may also include a third delivery sub-line and a fourth delivery sub-line fluidly connected to the second delivery main line and downstream of the second delivery sub-line. The third delivery sub-line may be configured to provide fluid access from the second delivery main line to the first semiconductor processing chamber. The fourth delivery sub-line may be configured to provide fluid access from the second delivery main line to the second semiconductor processing chamber. The third delivery sub-line may include a third flow controller configured to control a first flow rate of the second gas flowing into the first semiconductor processing chamber. The fourth delivery sub-line may include a fourth flow controller configured to control a second flow rate of the second gas flowing into the second semiconductor processing chamber. The precursor delivery controller may further be communicatively connected to the third flow controller and the fourth flow controller. The precursor delivery controller may be further configured to control the third flow controller based on the measured concentration of the precursor to deliver the first mixture to the first semiconductor processing chamber according to the first recipe set point. The precursor delivery controller may be further configured to control the fourth flow controller based on the measured concentration of the precursor to deliver the second mixture to the second semiconductor processing chamber according to the second recipe set point. In some embodiments, the first recipe set point may define a first concentration of the precursor contained in the first mixture of the first gas and the second gas. The second recipe set point may define a second concentration of the precursor contained in the second mixture of the first gas and the second gas.

[0010] An embodiment of the present technology may include a semiconductor processing system. An exemplary semiconductor processing system may include a first semiconductor processing chamber and a second semiconductor processing chamber arranged in a tandem section of the semiconductor processing system. The semiconductor processing system may also include a precursor delivery system. The precursor delivery system may include a first delivery main line configured to deliver a first gas. The first delivery main line may be fluidly connected with a first delivery sub-line and a second delivery sub-line. The first delivery sub-line may include a first flow controller and may be configured to provide fluid access from the first delivery main line to the first semiconductor processing chamber. The second delivery sub-line may include a second flow controller and may be configured to provide fluid access from the first delivery main line to the second semiconductor processing chamber. The precursor delivery system may also include an optical absorption sensor mounted along the first delivery main line. The optical absorption sensor may be configured to measure a concentration of a precursor contained in the first gas. The precursor delivery system may also include a second delivery main line configured to deliver a second gas. The second delivery main line may be fluidly connected to the third delivery sub-line and the fourth delivery sub-line. The third delivery sub-line may include a third flow controller and may be configured to provide fluid access from the second delivery main line to the first semiconductor processing chamber. The fourth delivery sub-line may include a fourth flow controller and may be configured to provide fluid access from the second delivery main line to the second semiconductor processing chamber. The precursor delivery system may further include a precursor delivery controller communicatively connected to the optical absorption sensor, the first flow controller, the second flow controller, the third flow controller, and the fourth flow controller. The precursor delivery controller may be configured to control the first flow controller and the third flow controller based on the measured concentration of the precursor to deliver the first mixture of the first gas and the second gas to the first semiconductor processing chamber according to the first recipe set point.The precursor delivery controller may be further configured to control the second flow controller and the fourth flow controller based on the measured concentrations of the precursors to deliver a second mixture of the first gas and the second gas to the second semiconductor processing chamber according to a second recipe set point. The precursor delivery system may be configured to deliver the first mixture and the second mixture simultaneously.

[0011] The present technique may provide numerous advantages over conventional systems and techniques. For example, the present technique may provide accurate precursor delivery into one or more processing chambers by compensating for any variations in the concentration of the precursor delivered from the gas source. Additionally, the present technique may enable different processes to be performed simultaneously utilizing a single gas source to deliver different concentrations and / or amounts of precursor to one or more processing chambers. The above and other embodiments, along with many of their advantages and features, may be described in more detail in the following specification and in conjunction with the accompanying drawings.

[0012] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief description of the drawings]

[0013] [Figure 1] 1 shows a top view of an embodiment of an exemplary processing system, in accordance with an embodiment of the present technique. [Diagram 2] 1 illustrates a schematic diagram of one embodiment of an exemplary processing system including a precursor delivery system according to an embodiment of the present technique; [Diagram 3] 1 illustrates a schematic diagram of an exemplary configuration of a precursor sensor according to an embodiment of the present technique; [Figure 4] 4 illustrates a schematic diagram of fluid flow through the precursor sensor of FIG. 3 according to an embodiment of the present technology; [Figure 5A] 1 illustrates a schematic diagram of an exemplary radiation intensity measurement according to an embodiment of the present technique; [Figure 5B] 1 illustrates a schematic diagram of an exemplary radiation intensity measurement according to an embodiment of the present technique; [Figure 6] 1 illustrates exemplary steps in a method for precursor delivery according to an embodiment of the present technology. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Some of the figures are included as schematics. It is understood that the figures are for illustrative purposes and are not to be considered to scale unless expressly stated to be to scale. Furthermore, as schematics, the figures are provided to aid in understanding and may not include all aspects or information as compared to realistic representations and may include material that is emphasized for illustrative purposes.

[0015] In the accompanying drawings, similar components and / or features may have the same reference numbers. Furthermore, various components of the same type may be distinguished by following the reference numbers with a letter that distinguishes between the similar components. If only a first reference number is used in this specification, the description is applicable to any of the similar components having the same first reference number, regardless of the letter.

[0016] Selectivity in the semiconductor industry may refer to the deposition / etch rate of one material relative to another. The gas mixture delivered into the semiconductor processing chamber may affect the selectivity. The gas mixture may be stable at times, but often unstable. Instabilities in the delivery of the gas mixture may be due to the chemical properties of the gas mixture, environmental factors, delivery path configurations, etc. Instabilities or variations in the delivery of the gas mixture may be detrimental to the overall processing quality of the film or substrate being processed.

[0017] The technology described herein overcomes these problems by utilizing an optical absorption sensor to measure and / or monitor the concentration of a precursor contained in a first gas delivered from a gas source. Based on the measured concentration, the flow rates of the first and second gases, which may be utilized to dilute the first gas and / or correct any variations in the concentration of the precursor, may be adjusted to achieve accurate delivery of the precursor into one or more processing chambers. Furthermore, by separately adjusting the flow rates of the first and second gases flowing into one or more processing chambers, the technology may utilize a single gas source to deliver different concentrations and / or amounts of precursor to one or more processing chambers to perform different processes. The remaining disclosure routinely identifies specific precursor and dilution gases utilizing the disclosed technology, but it will be readily apparent that the systems and methods are equally applicable to a variety of other processes that may be utilized during semiconductor processing. Correspondingly, the technology should not be considered limited to use with only the gases described. Additionally, although optical absorption sensors are described herein as an example, any sensor that can be used to measure the concentrations and / or relative ratios of a gas mixture may be utilized and / or implemented in the present technology.

[0018] 1 illustrates a top view of an embodiment of a deposition, etch, bake, and cure chamber processing system 100 according to an embodiment. In the figure, a pair of front opening unified pods (FOUPs) 102 provide substrates of various sizes that are received by a robot arm 104 and placed in a low pressure holding area 106 and then placed into one of the substrate processing chambers 108a-108f located in tandem sections 109a-109c. A second robot arm 110 can be used to transfer substrate wafers from the holding area 106 to the substrate processing chambers 108a-108f and vice versa. Each substrate processing chamber 108a-108f can be equipped to perform several substrate processing steps, including cyclical layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), wet etching, pre-cleaning, degassing, alignment, and other substrate processes, as well as the dry etch processes and selective deposition described herein.

[0019] The substrate processing chambers 108a-108f may include one or more system components for depositing, annealing, curing, and / or etching a dielectric film on a substrate wafer. In one configuration, two pairs of processing chambers (e.g., 108c-108d and 108e-108f) may be used to deposit a dielectric or metal-containing material on a substrate, and a third pair of processing chambers (e.g., 108a-108b) may be used to etch the deposited dielectric. In another configuration, all three pairs of chambers (e.g., 108a-108f) may be configured to etch a dielectric film on a substrate. Any one or more of the processes described may be performed in chambers separate from the fabrication system shown in various embodiments.

[0020] In some embodiments, the chambers specifically include at least one etch chamber and at least one deposition chamber. By combining these chambers in the processing side of the factory interface, all of the etching and deposition processes can be performed in a controlled environment. For example, a vacuum environment can be maintained on the processing side of the holding area 106, such that all chambers and transfers are maintained under vacuum in embodiments. This can also prevent water vapor and other air components from contacting the substrate being processed. It will be understood that additional configurations of deposition, etch, annealing, and curing chambers for dielectric films are contemplated by the system 100.

[0021] FIG. 2 illustrates a schematic diagram of an exemplary processing system 200 according to an embodiment of the present technique. The processing system 200 may include a first semiconductor processing chamber 202 and a second semiconductor processing chamber 204. In some embodiments, the first semiconductor processing chamber 202 and the second semiconductor processing chamber 204 may be disposed in a tandem section 206 of the processing system 200, similar to the pair of processing chambers 108 described above with reference to FIG. 1. The first processing chamber 202 and the second processing chamber 204 may be configured to simultaneously perform different processes. The processing system 200 may further include a precursor delivery system 208 configured to deliver one or more precursors or gas mixtures to the first semiconductor processing chamber 202 and / or the second semiconductor processing chamber 204. In some embodiments, the precursor delivery system 208 may be configured to deliver one or more precursors or gas mixtures to the first processing chamber 202 and / or the second processing chamber 204 simultaneously and / or separately.

[0022] The precursor delivery system 208 may include a first delivery main line 210 configured to deliver a first gas from a first gas source 212, such as a precursor source. Depending on the gas, the first gas source 212 may include a cylinder or other container for storing the first gas in solid, liquid, and / or gas form that may be vaporized for delivery through the first delivery main line 210. In some embodiments, the first delivery main line 210 may also be configured to deliver a purge gas from a purge gas source 213, such as nitrogen, or any other gas suitable for semiconductor processing. Although two gas sources are shown in FIG. 1, the first delivery main line 210 may be configured to deliver only one gas or more than two gases from one gas source or multiple gas sources.

[0023] The precursor delivery system 208 may further include a first delivery sub-line 214 fluidly connected to the first delivery main line 210. The first delivery sub-line 214 may be configured to provide fluid access from the first delivery main line 210 to the first semiconductor processing chamber 202. In some embodiments, the first delivery sub-line 214 may include a flow controller 216, e.g., a mass flow controller, configured to control a flow rate of the first gas delivered through the first delivery sub-line 214 into the first processing chamber 202. In some embodiments, the precursor delivery system 208 may further include a second delivery sub-line 218 fluidly connected to the first delivery main line 210. The second delivery sub-line 218 may be configured to provide fluid access from the first delivery main line 210 to the second semiconductor processing chamber 204. In some embodiments, the second delivery sub-line 218 may include a flow controller 220, e.g., a mass flow controller, configured to control the flow rate of the first gas delivered through the second delivery sub-line 218 into the second processing chamber 204.

[0024] In some embodiments, the precursor delivery system 208 may further include a precursor sensor 224 implemented along the first delivery main line 210 and upstream of the first delivery sub-line 214 and the second delivery sub-line 218. In some embodiments, the precursor sensor 224 may include an optical absorption sensor. The precursor sensor 224 may be configured to measure a concentration of one or more precursors contained in the first gas delivered through the first delivery main line 210, as described in more detail below.

[0025] In some embodiments, the precursor delivery system 208 may further include a second delivery main line 226 configured to deliver a second gas from a second gas source 228, such as a diluent gas source. Depending on the gas, the second gas source 228 may include a cylinder or other container for storing the second gas in solid, liquid, and / or gas form, which may be vaporized for delivery through the second delivery main line 226.

[0026] In some embodiments, the precursor delivery system 208 may further include a third delivery sub-line 230 fluidly connected to the second delivery main line 226. The third delivery sub-line 230 may be configured to provide fluid access from the second delivery main line 226 to the first semiconductor processing chamber 202. In some embodiments, the third delivery sub-line 230 may include a flow controller 232, e.g., a mass flow controller, configured to control a flow rate of the second gas through the third delivery sub-line 230 to the first processing chamber 202. In some embodiments, the precursor delivery system 208 may further include a fourth delivery sub-line 234 fluidly connected to the second delivery main line 226. The fourth delivery sub-line 234 may be configured to provide fluid access from the second delivery main line 226 to the second semiconductor processing chamber 204. In some embodiments, the fourth delivery sub-line 234 may include a flow controller 236, e.g., a mass flow controller, configured to control the flow rate of the second gas flowing through the fourth delivery sub-line 234 into the second processing chamber 204.

[0027] 2, the third transmission sub-line 230 and the fourth transmission sub-line 234 are described as being fluidly connected to the second transmission main line 226, although in some embodiments, the second transmission main line 226 may be omitted. In some embodiments, each of the third transmission sub-line 230 and the fourth transmission sub-line 234 may be connected to a diluent gas source. The diluent gas sources connected to the third transmission sub-line 230 and the fourth transmission sub-line 234 may be the same in some embodiments or may be different in some embodiments.

[0028] One or more valves may be installed along the first delivery main line 210 and / or the second delivery main line 226, and / or the first delivery sub-line 214, the second delivery sub-line 218, the third delivery sub-line 230, and / or the fourth delivery sub-line 234 for safety and / or to prevent cross-contamination. In some embodiments, a manual valve and / or safety valve 250 may be installed along the first delivery main line 210 downstream of the first gas source 212. A purge valve 252 may be installed downstream of the purge gas source 213. An upstream valve 254 may be installed downstream of the first gas source 212 and the purge gas source 213 and upstream of the precursor sensor 224. In some embodiments, along the first and second delivery sublines 214, 218, upstream valves 256a, 256b may be installed upstream of the corresponding flow controllers 216, 220, and downstream valves 258a, 258b may be installed downstream of the corresponding flow controllers 216, 220. Final valves 260a, 260b may also be installed downstream of the valves 256, 258 and upstream of the corresponding first and second processing chambers 202, 204. In some embodiments, along the third and fourth delivery sublines 230, 234, manual valves 262a, 262b may be installed downstream of the second gas source 228, and upstream valves 264a, 264b may be installed downstream of the corresponding manual valves 262a, 262b and upstream of the corresponding flow controllers 232, 236. Additionally, along the third and fourth transmission sub-lines 230, 234, final valves 266a, 266b may also be installed downstream of the corresponding flow controllers 232, 236 and upstream of the corresponding first and second processing chambers 202, 204.

[0029] In some embodiments, the precursor delivery system 208 may further include a precursor delivery controller 270. The precursor delivery controller 270 may be communicatively coupled to the precursor sensor 224 and may be configured to receive measurements from the precursor sensor 224 indicative of concentrations of one or more precursors contained in the first gas. The precursor delivery controller 270 may also be communicatively coupled to the flow controllers 216, 220, 232, 236 and may be configured to separately control each of the flow controllers 216, 220, 232, 236 to adjust corresponding flow rates of the first gas and / or second gas flowing into the first process chamber 202 and / or the second process chamber 204 to deliver the gas mixture according to one or more semiconductor process recipes. Specifically, in some embodiments, the precursor delivery controller 270 may further be communicatively coupled to a process recipe data store 272. The process recipe data store 272 may be configured to store a semiconductor process recipe, which may include process setpoints such as flow rates of one or more precursors and / or diluent gases, concentrations of one or more precursors, process pressures, and process temperatures. The precursor delivery controller 270 may be configured to retrieve or obtain the process recipe setpoints, among others, from the process recipe data store 272. Based on the retrieved process setpoints and the measured concentrations of one or more precursors in the first gas, the precursor delivery controller 270 may control and / or adjust one or more of the flow controllers 216, 220, 232, 236 separately from each other to deliver the gas mixture to the first process chamber 202 and / or the second process chamber 204 accordingly.

[0030] As discussed above, the gas mixture may be unstable due to chemical properties, environmental factors, delivery pathway configurations, etc. For example, the first gas may include a precursor, such as diborane (B2H6), which may be diluted with a diluent gas, such as hydrogen (H2), at a particular concentration, e.g., about 10% to about 30%, which may be higher than the process setpoint of various process recipes. However, the concentration of the precursor delivered from the first gas source 212 may deviate from the specified concentration due to various reasons. Such deviations in the concentration of the delivered precursor may lead to variations in the amount and / or concentration of the precursor delivered to the first process chamber 202 and / or the second process chamber 204 for processing the semiconductor substrate contained therein. The variations in the amount and / or concentration of the delivered precursor may be detrimental to the quality of the substrate being processed, e.g., to the quality of the film.

[0031] To limit or prevent fluctuations in the amount of precursor delivered to the first process chamber 202 and / or the second process chamber 204, the concentration of the precursor delivered from the first gas source 212 can be monitored and / or measured using the precursor sensor 224. The measured concentration of the precursor can be used to further dilute the first gas containing the precursor using a second gas, which can be hydrogen (H2), such that a precise amount of precursor can be delivered to the first process chamber 202 and / or the second process chamber 204 according to the process set point.

[0032] Specifically, in some embodiments, based on the measured concentration of the precursor contained in the first gas, the precursor delivery controller 270 may be configured to control the flow controller 216 and the flow controller 232 to control the flow rates of the first gas and the second gas, respectively, flowing into the first process chamber 202. By controlling the flow rates of the first gas and the second gas flowing into the first process chamber 202 based on the measured precursor concentration, a precise amount of precursor may be delivered into the first process chamber 202 according to the first recipe process set point. Similarly, based on the measured concentration of the precursor contained in the first gas, the precursor delivery controller 270 may be further configured to control the flow controller 220 and the flow controller 236 to control the flow rates of the first gas and the second gas, respectively, flowing into the second process chamber 204. By controlling the flow rates of the first gas and the second gas flowing into the second processing chamber 204 based on the measured precursor concentration, a precise amount of precursor can be delivered into the second processing chamber 204 according to the second recipe process setpoints.

[0033] As described above, the first process chamber 202 and the second process chamber 204 can be configured to perform different processes simultaneously and / or separately from each other. For example, by controlling the flow controllers 216, 220, 232, 236 separately from each other, different gas mixtures with different concentrations of precursors can be delivered to the first process chamber 202 and / or the second process chamber 204. For example, a first gas mixture of a first gas and a second gas can be delivered to the first process chamber 202 while a second gas mixture of a first gas and a second gas can be delivered to the second process chamber 204, where the first gas mixture and the second gas mixture can contain different concentrations of precursors. The different concentrations can be specified by corresponding process set points of the first process chamber 202 and the second process chamber 204.

[0034] There are several advantages associated with the precursor delivery system 208 described herein. By controlling the flow rates of the first gas and the second gas delivered to different process chambers, e.g., the first process chamber 202 and / or the second process chamber 204, different amounts and / or concentrations of precursors can be delivered to different process chambers. Furthermore, a mixture of the first gas and the second gas can be delivered at different total flow rates according to different recipes and / or process set points. Furthermore, the processing system 200 can enable a single gas source, e.g., the first gas source 212, to be used to deliver different levels or concentrations of precursors into different process chambers to perform different processes according to different process recipe set points, instead of using multiple gas sources when multiple processes can be performed in multiple chambers. Furthermore, by measuring the concentration of the precursor delivered from the gas source, precise control of the amount and / or concentration of the precursor delivered can be achieved, and instability and / or drift in the amount of precursor delivered into the process chamber can be avoided. 2, it should be noted that the processing system 200 may include only one processing chamber or more than two processing chambers. The precursor delivery system 208 may be configured to deliver different amounts and / or concentrations of precursors from one gas source into three, four, five, six, etc. different processing chambers simultaneously and / or separately from each other.

[0035] FIG. 3 illustrates a schematic of an exemplary configuration of a precursor sensor 224 according to an embodiment of the present technology. The precursor sensor 224 may include an optical absorption sensor, such as a non-dispersive infrared sensor. However, any sensor that may be used to measure the concentration and / or relative ratio of a gas mixture may be utilized and / or implemented in the present technology. In some embodiments, the precursor sensor 224 may include an elongated optical cell 300. The optical cell 300 may include an inlet 302 that may be disposed near a first end 304 of the optical cell 300. The first end 304 of the optical cell 300 may be defined by an optical filter, as described in more detail below. The inlet 302 may provide fluid access to the optical cell 300 from the first gas source 212. The optical cell 300 may further include an outlet 306 that may be disposed near a second end 308 of the optical cell 300. The second end 308 of the optical cell 300 may be defined by an optical window, as described in more detail below. The outlet 306 may provide fluid access from the optical cell 300 to the downstream first transmission sub-line 214 and / or second transmission sub-line 218. In some embodiments, the optical cell 300 may be made of a metal, such as stainless steel, aluminum with or without a surface coating or treatment, such as anodization, aluminum oxide, or aluminum nitride. Other suitable materials for making the optical cell 300 may be selected based on the flow of fluids through the optical cell 300 and various other considerations.

[0036] The precursor sensor 224 may further include a light source 310 and a photodetector 312 disposed at opposing ends of the optical cell 300. An optical filter 314 defining a first end 304 of the optical cell 300 may be disposed between the optical cell 300 and the photodetector 312. An optical window 316 defining a second end 308 of the optical cell 300 may be disposed between the optical cell 300 and the light source 310. In the embodiment shown in FIG. 3, the light source 310 may be disposed at the second end 308 of the optical cell 300 near the outlet 306 and the photodetector 312 may be disposed at the first end 304 of the optical cell 300 near the inlet 302. In some embodiments, the light source 310 may be disposed at the first end 304 of the optical cell 300 near the inlet 302 and the photodetector 312 may be disposed at the second end 308 of the optical cell 300 near the outlet 306. Although the figures show that the inlet 302 and / or outlet 306 may be located on a side wall of the optical cell 300 and oriented at an angle to the longitudinal axis of the optical cell 300, the inlet 302 and / or outlet 306 may be located at any suitable location on the optical cell 300, such as at opposing ends of the optical cell 300, and / or may be oriented parallel to the longitudinal axis of the optical cell 300.

[0037] The light source 310 and the light detector 312 may be disposed within the light source section 318 and the light detector section 320, respectively. In some embodiments, the light source section 318 and the light detector section 320 may each include a common cross-section as the optical cell 300, which may be circular, elliptical, polygonal, such as triangular, square, diamond, rectangular, pentagonal, hexagonal, or any suitable shape. Thus, the light source section 318, the optical cell 300, and the light detector section 320 may define an elongated body of the precursor sensor 224. In some embodiments, at least one of the light source section 318 and / or the light detector section 320 may have a different cross-sectional size and / or shape than the optical cell 300 to accommodate the various light sources 310 and / or light detectors 312 that may be utilized for the precursor sensor 224.

[0038] The optical cell 300 may define a linear optical path for light emitted from the light source 310. The light source 310, the optical window 316, the optical cell 300, the optical filter 314, and the photodetector 312 may be aligned along a longitudinal axis of the optical cell 300 such that the light emitted from the light source 310 may pass through the optical cell 300 and be detected by the photodetector 312. Thus, as the first gas may flow through the optical cell 300, the first gas may be analyzed, for example, using optical absorption. For example, the level or concentration of a precursor contained in the first gas may be measured, for example, the level or concentration of diborane contained in the first gas. The measured level or concentration of the precursor may further be used to control the flow controllers 216, 220, 232, 236 to ensure that the correct amount and / or concentration of the precursor may be delivered to the first processing chamber 202 and / or the second processing chamber 204.

[0039] In some embodiments, the precursor sensor 224 may further include one or more sensors 324, such as a pressure sensor configured to measure the pressure inside the optical cell 300 and / or a temperature sensor configured to measure the temperature inside the optical cell 300. Although the one or more sensors 324 are shown co-located and disposed on a cell wall of the optical cell 300 in FIG. 3, in some embodiments, the one or more sensors 324 may be disposed in separate locations, such as at various locations on the cell wall of the optical cell 300, at the inlet 302, at the outlet 306, or at any other suitable location for measuring the temperature and / or pressure inside the optical cell 300. The precursor sensor 224 may further include a circuit board 326 that electrically connects other electronic or electrical components, such as the light source 310, the light detector 312, and / or the one or more sensors 224. In some embodiments, the various components of the precursor sensor 224 described herein may be housed within a sensor enclosure.

[0040] FIG. 4 is a schematic diagram of a fluid flowing through and analyzed by a precursor sensor 224 according to an embodiment of the present technology. The fluid flow may be or may include a first gas 328 flowing from a first gas source 212 into an optical cell 300 via an inlet 302. The first gas 328 may then be directed to flow through the optical cell 300 along a longitudinal axis of the optical cell 300 toward an outlet 306. Light (not shown in FIG. 4) may be emitted from the light source 310 and transmitted through the optical cell 300 filled with the first gas 328. A portion of the light may be absorbed by the first gas 328, for example, by diborane contained in the first gas 328. The concentration of diborane contained in the first gas 328 may then be analyzed using a light detector 312 based on the absorption of light by the first gas 328.

[0041] To facilitate measurement of the level or concentration of diborane, optical window 316 may be configured to allow light that may be absorbed by diborane to be transmitted from light source 310. For example, in some embodiments, optical window 316 may be configured to allow light, such as infrared radiation, to be transmitted and enter optical cell 300. Infrared radiation transmitted through optical window 316 may have a wavelength of approximately 400 cm. -1 and about 3,000 cm -1 or between about 2 μm and about 30 μm. The above range may include a number of absorption wavelengths specific to diborane, which have the following wavenumbers: 1,600±100 cm -1 , 2,520±100cm -1 , and / or other characteristic wave numbers, or infrared radiation having the following wavelengths: 3,968±100 nm, 6,250±100 nm, and / or other characteristic wavelengths.

[0042] In some embodiments, the optical window 316 may be selected and / or configured to allow radiation to pass therethrough that may include higher or lower absorption wavelengths specific to diborane. In some embodiments, the optical window 316 may be selected and / or configured to allow radiation to pass therethrough that may include only a single absorption wavelength ... -1 and about 2,000 cm -1 Between the two, approximately 1,200 cm -1 and about 2,800 cm -1 Between, about 2,000cm -1 and about 3,200 cm -1 , or any other suitable range of infrared radiation. Exemplary materials that may be suitable for the optical window 316 may include potassium bromide, sapphire, barium fluoride, germanium, or any other suitable material that may allow the radiation that diborane may absorb to pass through. The material for the optical window 316 may also be selected and / or configured to be corrosion resistant. Various gases or precursors utilized during semiconductor processing may be corrosive. The exemplary materials described herein not only allow the radiation that diborane may absorb to pass through, but may also be resistant to corrosion by the various gases flowing through, thus extending the operational life of the precursor sensor 224.

[0043] In some embodiments, to facilitate measurement of the level or concentration of diborane, the optical filter 314 can be selected and / or configured to allow transmission of radiation encompassing a single absorption wavelength characteristic of diborane. For example, the filter 314 can be configured to transmit radiation encompassing the following wavenumbers: 1,600±100 cm -1 , 2,520±100cm -1, and / or other characteristic wavelengths characteristic of diborane absorption, or infrared radiation having any of the following wavelengths: 3,968±100 nm, 6,250±100 nm, and / or other characteristic wavelengths characteristic of diborane absorption. In some embodiments, filter 314 may be selected and / or configured to allow radiation encompassing more than one absorption wavelength characteristic of diborane to pass through. As with optical window 316, various materials that may be suitable for filter 314 may also be resistant to corrosion by various gases flowing through optical cell 300. As described herein, optical window 316 and / or filter 314 may be selected or configured specifically to detect diborane. Without the specific configuration or selection of optical window 316 and / or filter 314 described herein, effective detection of diborane levels or concentrations under conditions suitable for semiconductor processing may not be achieved.

[0044] In some embodiments, the fluid flowing through the optical cell 300 may include one or more precursors instead of or in addition to diborane. The one or more precursors may include tetraborane, arsine, and / or phosphine, etc. The optical window 316 and / or the filter 314 may be further configured to facilitate detection of the level or concentration of one or more of tetraborane, arsine, phosphine, etc. For example, the optical window 316 may be configured to allow radiation that may include one or more absorption wavelengths characteristic of tetraborane, arsine, phosphine, and / or other precursors that may be included in the first gas. The filter 314 may be configured to allow radiation that may include one or more absorption wavelengths characteristic of tetraborane, arsine, phosphine, and / or other precursors to detect the level or concentration thereof.

[0045] The photodetector 312 may be configured to detect the intensity of the incident light, more specifically, the decrease in the intensity of the incident light at wavelengths characteristic of precursor absorption, to determine the level or concentration of precursors, such as diborane, tetraborane, arsine, phosphine, and / or other precursors. FIGS. 5A and 5B are schematic illustrations of detected radiation intensity according to an embodiment of the present technology. The signal 502 in both FIGS. 5A and 5B may represent a reference signal 502, which may be kept constant during normal operation of the precursor sensor 224. The reference signal 502 may decrease due to degradation of the light source 310. Thus, the reference signal 502 may be utilized to perform a health check and / or a periodic baseline check of the sensor. The signal 504 in FIGS. 5A and 5B may represent the intensity of radiation detected by the photodetector 312 to measure the level or concentration of one or more precursors of interest that may flow through the optical cell 300. FIG. 5A illustrates an embodiment in which no fluid flows through the optical cell 300 or the fluid flowing through the optical cell 300 may not absorb any of the radiation emitted from the light source 310. Correspondingly, no drop in intensity signal 504 is detected. FIG. 5B illustrates an embodiment in which the fluid passing through the optical cell 300 may absorb at least a portion of the radiation as indicated by a drop 506 in radiation intensity measured by the photodetector 312. For example, the fluid flowing through the optical cell 300 may be or include a first gas flowed from the process chamber 102, and thus may contain diborane in some embodiments. In this case, a drop 506 in radiation intensity at an absorption wavelength specific to diborane may be detected due to the presence of diborane. Although the drop 506 is shown only at or near one wavelength, drops at or near multiple wavelengths may be detected depending on the configuration of the light source 310 and / or the photodetector 312. The decrease in the detected radiation intensity due to absorption can be used to determine the level or concentration of diborane contained in the first gas. In some embodiments, the level or concentration of diborane can be represented by the partial pressure of diborane. Thus, based on the measured radiation intensity, the partial pressure of diborane contained in the first gas can be determined.

[0046] In some embodiments, the pressure of the first gas flowing through the optical cell 300 may be relatively low, between about 1 mTorr and about 10 Torr, for example, between about 1 mTorr and about 5 Torr, between about 1 mTorr and about 4 Torr, between about 1 mTorr and about 3 Torr, between about 1 mTorr and about 2 Torr, or between about 1 mTorr and about 1 Torr. Many conventional diborane detectors may not operate in these low pressure ranges. In contrast, the precursor sensor 224 configuration described herein can effectively detect diborane contained in the first gas at a relatively low pressure range. For example, the precursor sensor 224 described herein can effectively detect partial pressures of diborane that can be as low as about 100 ppm or less, about 90 ppm or less, about 80 ppm or less, about 70 ppm or less, about 60 ppm or less, about 50 ppm or less, about 40 ppm or less, about 30 ppm or less, about 20 ppm or less, about 10 ppm or less, about 5 ppm or less, about 3 ppm or less, about 1 ppm or less, or even less.

[0047] In some embodiments, the detected partial pressure of diborane is between about 1 ppm and about 900,000 ppm, e.g., between about 1 ppm and about 500,000 ppm, between about 1 ppm and about 100,000 ppm, between about 1 ppm and about 50,000 ppm, between about 1 ppm and about 10,000 ppm, between about 1 ppm and about 5000 ppm, between about 1 ppm and about 3000 ppm, between about 1 ppm and about 1000 ppm, between about 1 ppm and about 500 ppm, between about 1 ppm and about 400 ppm, between about 1 ppm and about 500 ppm, between about 1 ppm and about 600 ppm, between about 1 ppm and about 700 ppm, between about 1 ppm and about 800 ppm, between about 1 ppm and about 900,000 ppm, e.g., between about 1 ppm and about 500,000 ppm, between about 1 ppm and about 1000 ppm, between about 1 ppm and about 500 ppm, between about 1 ppm and about 400 ppm, between about 1 ppm and about 500 ppm, between about 1 ppm and about 600 ppm, between about 1 ppm and about 800 ppm, between about 1 ppm and about 900,000 ppm, between about 1 ppm and about 1000 ppm, between about 1 ppm and about 1000 ppm, between about 1 ppm and about 15 ...500 ppm, between about 1 ppm and about 1000 ppm, between between about 1 ppm and about 300 ppm, between about 1 ppm and about 200 ppm, between about 1 ppm and about 100 ppm, between about 1 ppm and about 90 ppm, between about 1 ppm and about 80 ppm, between about 1 ppm and about 70 ppm, between about 1 ppm and about 60 ppm, between about 1 ppm and about 50 ppm, between about 1 ppm and about 40 ppm, between about 1 ppm and about 30 ppm, between about 1 ppm and about 20 ppm, between about 1 ppm and about 10 ppm, between about 1 ppm and about 5 ppm, or between about 1 ppm and about 3 ppm.

[0048] Although an optical absorption sensor is described herein as an example of the precursor sensor 224, in some embodiments, the precursor sensor 224 may be or include an acoustic sensor. The acoustic sensor may measure the concentration of the precursor by transmitting a high frequency spread spectrum acoustic signal, for example in the MHz range, through the gas flowing past the sensor. A maximum likelihood time delay between the first received signal and its echo may be calculated. Based on the maximum likelihood time delay, the speed of sound in the gas flowing past the sensor may be calculated. Based on the calculated speed of sound, the concentration of the precursor contained in the gas may be determined.

[0049] The processing systems described above may be used in carrying out exemplary semiconductor methods. Figure 6 illustrates exemplary steps in a method 600 for precursor delivery in accordance with an embodiment of the present technology. The delivered precursor may be used in a variety of semiconductor processes, including deposition and / or etching. Some or all of the steps may be performed using the chambers and / or systems described above, or may be performed in different chambers and / or systems.

[0050] The method 600 may begin in step 605 by flowing a first gas from a first gas source through a first main line of a semiconductor processing system, such as the first main line 210 of the semiconductor processing system 200 described above. The first gas may include a precursor and a diluent gas. In some embodiments, the precursor may include diborane. In some embodiments, the diluent gas may include hydrogen. In some embodiments, the first main line may be fluidly connected to a first sub-line and a second sub-line downstream of the first main line, such as the first sub-line 214 and the second sub-line 218. The first sub-line may be configured to provide fluid access from the first main line to a first semiconductor processing chamber, such as the first processing chamber 202 of the processing system 200. A second transmission sub-line may be configured to provide fluid access from the first transmission main line to a second semiconductor processing chamber, such as the second processing chamber 204 of the processing system 200. Thus, the first chamber and the second chamber may be configured to simultaneously perform different semiconductor processes.

[0051] In step 610, a concentration of a precursor contained in the first gas transmitted through the first transmission main line may be measured. The concentration of the precursor may be measured using an optical absorption sensor, such as the precursor sensor 224 described above with reference to FIG. 3. Thus, in some embodiments, the optical absorption sensor may include an elongated optical cell, such as the optical cell 300 described above. The optical cell may be configured to direct the first gas to flow through at least a portion of the elongated optical cell along a longitudinal axis of the optical cell, during which the concentration of the precursor contained in the first gas may be measured. In some embodiments, the optical absorption sensor may include an optical filter, such as the optical filter 314 described above, that may define a first end of the elongated optical cell. The optical absorption sensor may also include an optical window, such as the optical window 316 described above, that may define a second end of the elongated optical cell opposite the first end of the optical cell. The optical absorption sensor may further include a photodetector, such as photodetector 312, and a light source, such as light source 310, disposed at first and second opposing ends of the optical cell. To facilitate detection of a precursor, such as diborane, the optical window may be about 400 cm -1 and about 3,000 cm -1 The optical filter may be configured to allow radiation having a wavenumber between 1,600 and 100 cm to enter the optical cell through the optical window. The optical filter may be configured to filter out radiation specific to diborane absorption, e.g., radiation having a wavenumber between 1,600 and 100 cm. -1 , 2,520±100cm -1 , or at least one of the other wavenumbers characteristic of diborane absorption may be transmitted and detected by the photodetector.

[0052] In some embodiments, in step 615, a second gas may be flowed from a second gas source through a second delivery main line, for example, through the second delivery main line 226 of the processing system 200 described above. The second gas may include a diluent gas, such as hydrogen. The second delivery main line may be fluidly connected to a third delivery sub-line and a fourth delivery sub-line downstream of the second delivery main line, for example, the third delivery sub-line 230 and the fourth delivery sub-line 234. The third delivery sub-line may be configured to provide fluid access from the second delivery main line to the first semiconductor processing chamber. The fourth delivery sub-line may be configured to provide fluid access from the second delivery main line to the second semiconductor processing chamber.

[0053] In step 620, a first flow rate of the first gas transmitted through the first transmission sub-line may be adjusted based at least in part on the measured concentration of the precursor. In step 625, a second flow rate of the first gas transmitted through the second transmission sub-line may also be adjusted based at least in part on the measured concentration of the precursor. In some embodiments, the method may include adjusting, in step 630, a first flow rate of the second gas transmitted through the third transmission sub-line based at least in part on the measured concentration of the precursor, and adjusting, in step 635, a second flow rate of the second gas transmitted through the fourth transmission sub-line based at least in part on the measured concentration of the precursor. The above adjustments may be made by controlling flow controllers, such as mass flow controllers, disposed along each of the first, second, third, and fourth transmission sub-lines, e.g., flow controllers 216, 220, 232, and 236 described above. The flow controller may be communicatively coupled to a precursor delivery controller, such as precursor delivery controller 270 described above. The precursor delivery controller may be configured to receive a process recipe set point from a process recipe data store, such as process recipe data store 272, and to receive a measured concentration of the precursor from the optical absorption sensor. The process set point may specify the concentration of the precursor in the gas mixture delivered to each process chamber, the flow rate of one or more gases flowing into the process chamber, etc., to perform various semiconductor processes. Based on the measured concentration of the precursor and the process recipe set point, the precursor delivery controller may control the flow rate of the first gas and / or the flow rate of the second gas delivered through the first sub-line, the second sub-line, the third sub-line, and / or the fourth sub-line.

[0054] In step 640, a first mixture of a first gas delivered through the first delivery sub-line and a second gas delivered through the third delivery sub-line may be delivered to a first semiconductor processing chamber according to a first recipe set point. The first recipe set point may define or specify a first concentration of a precursor contained in the first mixture of the first gas and the second gas. In step 645, a second mixture of a first gas delivered through the second delivery sub-line and a second gas delivered through the fourth delivery sub-line may be delivered to a second semiconductor processing chamber according to a second recipe set point. The second recipe set point may define or specify a second concentration of a precursor contained in the second mixture of the first gas and the second gas. The first recipe set point and the second recipe set point may be the same or different from each other. As mentioned above, in some embodiments, the first and second processing chambers can be configured to simultaneously execute different process recipes, such that a first gas mixture and a second gas mixture can be simultaneously delivered to the first and second semiconductor processing chambers, respectively, to execute different processes that may utilize different amounts and / or concentrations of precursors.

[0055] In the preceding description, for purposes of explanation, numerous details have been set forth in order to facilitate an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details or with additional details.

[0056] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents may be used without departing from the spirit of the above embodiments. Moreover, some well-known processes and elements have not been described to avoid unnecessarily obscuring the present technology. Thus, the above description should not be considered as limiting the scope of the present technology. Furthermore, although a method or process may be described sequentially or stepwise, it should be understood that the steps may be performed simultaneously or in a different order than listed.

[0057] Where a range of values ​​is given, unless the context clearly indicates otherwise, it is understood that each intervening value between the upper and lower limits of that range is specifically disclosed to the smallest unit of the lower limit. Any narrower range between any stated or unstated intervening value in a stated range and any other stated or intervening value in that stated range is included. The upper and lower limits of these narrower ranges may be individually included or excluded in the range, and each range where one or both limits are included or neither are included in the narrower range is also included within the scope of the technology, subject to any specifically excluded limit in the stated range. When a stated range includes one or both limits, ranges excluding one or both of the included limits are also included.

[0058] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "a precursor" includes a plurality of such precursors, and reference to "the layer" includes a reference to one or more layers and equivalents known to those skilled in the art, and so forth.

[0059] Additionally, the words "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including", when used in this specification and claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. 1. A method comprising: flowing a first gas, including a precursor and a diluent gas, through a first delivery main line; flowing a first gas through the first delivery main line, the first delivery sub-line being fluidly connected to a first delivery sub-line and a second delivery sub-line downstream of the first delivery main line, the first delivery sub-line being configured to provide fluid access from the first delivery main line to a first semiconductor processing chamber, and the second delivery sub-line being configured to provide fluid access from the first delivery main line to a second semiconductor processing chamber; Measuring a concentration of the precursor contained in the first gas delivered through the first delivery main line; adjusting a first flow rate of the first gas delivered through the first delivery sub-line based at least in part on the measured concentration of the precursor; adjusting a second flow rate of the first gas delivered through the second delivery sub-line based at least in part on the measured concentration of the precursor; delivering a first mixture of the first gas and a second gas including the diluent gas delivered through the first delivery sub-line to the first semiconductor processing chamber according to a first recipe set point; delivering a second mixture of the first gas and the second gas delivered through the second delivery sub-line to the second semiconductor processing chamber according to a second recipe set point; Including, The method, wherein the first mixture and the second mixture are simultaneously transferred to the first semiconductor processing chamber and the second semiconductor processing chamber, respectively.

2. The method of claim 1 , wherein the precursor comprises diborane.

3. The method of claim 1 , wherein the diluent gas comprises hydrogen.

4. The method of claim 1 , wherein the concentration of the precursor is measured using an optical absorption sensor.

5. the light absorption sensor includes an elongated optical cell; 5. The method of claim 4, wherein the elongated optical cell is configured to direct the first gas to flow through at least a portion of the elongated optical cell along a longitudinal axis of the elongated optical cell while the concentration of the precursor contained in the first gas is measured by the optical absorption sensor.

6. the optical absorption sensor includes an optical filter defining a first end of the elongated optical cell; The optical filter is adapted to receive the following wave numbers: 1,600±100cm －１ or 2,520 ± 100 cm －１ The method of claim 5 , further configured to allow infrared radiation having one or more of:

7. The light absorption sensor includes an optical window defining a second end of the elongated optical cell, and light incident on the elongated optical cell through the optical window is absorbed within a range of about 400 cm －１ and about 3,000 cm －１ The method of claim 5, comprising infrared radiation having a wave number between

8. the first recipe set point defines a first concentration of the precursor in the first mixture of the first gas and the second gas; The method of claim 1 , wherein the second recipe set point defines a second concentration of the precursor contained in the second mixture of the first gas and the second gas.

9. flowing the second gas through a second transmission main line; flowing the second gas through the second delivery main line, the second delivery sub-line being fluidly connected to a third delivery sub-line and a fourth delivery sub-line downstream of the second delivery main line, the third delivery sub-line being configured to provide fluid access from the second delivery main line to the first semiconductor processing chamber, and the fourth delivery sub-line being configured to provide fluid access from the second delivery main line to the second semiconductor processing chamber; adjusting a first flow rate of the second gas delivered through the third delivery sub-line based at least in part on the measured concentration of the precursor; adjusting a second flow rate of the second gas delivered through the fourth delivery sub-line based at least in part on the measured concentration of the precursor; Further comprising: transmitting the first mixture of the first gas and the second gas transmitted through the first transmission sub-line includes transmitting the first mixture of the first gas transmitted through the first transmission sub-line and the second gas transmitted through the third transmission sub-line; 2. The method of claim 1, wherein transmitting the second mixture of the first gas and the second gas transmitted through the second transmission sub-line comprises transmitting the second mixture of the first gas transmitted through the second transmission sub-line and the second gas transmitted through the fourth transmission sub-line.

10. A precursor delivery system comprising: a first transmission main line configured to transmit a first gas; a precursor sensor configured to measure a concentration of a precursor contained in the first gas delivered through the first delivery main line; a first transmission sub-line and a second transmission sub-line fluidly connected to and downstream of the first transmission main line, the first delivery sub-line is configured to provide fluid access from the first delivery main line to a first semiconductor processing chamber, and the second delivery sub-line is configured to provide fluid access from the first delivery main line to a second semiconductor processing chamber; a first delivery sub-line and a second delivery sub-line, the first delivery sub-line including a first flow controller configured to control a first flow rate of the first gas flowing into the first semiconductor processing chamber, and the second delivery sub-line including a second flow controller configured to control a second flow rate of the first gas flowing into the second semiconductor processing chamber; a precursor delivery controller communicatively connected to the precursor sensor, the first flow controller, and the second flow controller, configured to control the first flow controller based on the measured concentration of the precursor to deliver a first mixture of the first gas and a second gas to the first semiconductor processing chamber according to a first recipe set point; a precursor delivery controller further configured to control the second flow controller based on the measured concentration of the precursor to deliver a second mixture of the first gas and the second gas to the second semiconductor processing chamber according to a second recipe set point; A precursor delivery system comprising:

11. 11. The precursor delivery system of claim 10, wherein the precursor delivery system is configured to simultaneously deliver the first mixture to the first semiconductor processing chamber and deliver the second mixture to the second semiconductor processing chamber.

12. 11. The precursor delivery system of claim 10, wherein the precursor comprises diborane, the first gas further comprises hydrogen, and the second gas comprises hydrogen.

13. The precursor delivery system of claim 10 , wherein the precursor sensor comprises an optical absorption sensor.

14. the light absorption sensor includes an elongated optical cell; 14. The precursor delivery system of claim 13, wherein the elongated optical cell is configured to direct the first gas to flow through at least a portion of the elongated optical cell along a longitudinal axis of the elongated optical cell while the concentration of the precursor contained in the first gas is measured by the optical absorption sensor.

15. the optical absorption sensor includes an optical filter defining a first end of the elongated optical cell; The optical filter is adapted to receive the following wave numbers: 1,600±100cm －１ or 2,520±100 cm －１ 15. The precursor delivery system of claim 14, configured to allow infrared radiation having one or more of:

16. The light absorption sensor includes an optical window defining a second end of the elongated optical cell, and light incident on the elongated optical cell through the optical window is absorbed within a range of about 400 cm －１ and about 3,000 cm －１ 15. The precursor delivery system of claim 14, comprising infrared radiation having a wave number between

17. 15. The precursor delivery system of claim 14, wherein the optical absorption sensor further comprises at least one of a pressure sensor configured to measure a pressure inside the elongated optical cell, or a temperature sensor configured to measure a temperature inside the elongated optical cell.

18. The precursor delivery system comprises: a second transmission main line configured to transmit a second gas; a third transmission sub-line and a fourth transmission sub-line fluidly connected to the second transmission main line and downstream of the second transmission sub-line, the third delivery sub-line is configured to provide fluid access from the second delivery main line to the first semiconductor processing chamber, and the fourth delivery sub-line is configured to provide fluid access from the second delivery main line to the second semiconductor processing chamber; a third delivery sub-line and a fourth delivery sub-line, the third delivery sub-line including a third flow controller configured to control a first flow rate of the second gas flowing into the first semiconductor processing chamber, and the fourth delivery sub-line including a fourth flow controller configured to control a second flow rate of the second gas flowing into the second semiconductor processing chamber; Further comprising: the precursor delivery controller is further communicatively connected to the third flow controller and the fourth flow controller; the precursor delivery controller is further configured to control the third flow controller based on the measured concentration of the precursor to deliver the first mixture to the first semiconductor processing chamber according to the first recipe set point; 11. The precursor delivery system of claim 10, wherein the precursor delivery controller is further configured to control the fourth flow controller based on the measured concentration of the precursor to deliver the second mixture to the second semiconductor processing chamber according to the second recipe set point.

19. 11. The precursor delivery system of claim 10, wherein the first recipe set point defines a first concentration of the precursor contained in the first mixture of the first gas and the second gas, and the second recipe set point defines a second concentration of the precursor contained in the second mixture of the first gas and the second gas.

20. 1. A semiconductor processing system comprising: a first semiconductor processing chamber and a second semiconductor processing chamber disposed in a tandem section of the semiconductor processing system; A precursor delivery system; wherein the precursor delivery system comprises: a first transmission main line configured to transmit a first gas, the first transmission main line being fluidly connected to the first transmission sub-line and the second transmission sub-line; the first delivery sub-line includes a first flow controller and is configured to provide fluid access from the first delivery main line to the first semiconductor processing chamber; a first delivery main line, the second delivery sub-line including a second flow controller and configured to provide fluid access from the first delivery main line to the second semiconductor processing chamber; an optical absorption sensor mounted along the first main transmission line, the optical absorption sensor configured to measure a concentration of a precursor contained in the first gas; a second transmission main line configured to transmit a second gas, the second transmission main line being fluidly connected to the third transmission sub-line and the fourth transmission sub-line; the third delivery sub-line includes a third flow controller and is configured to provide fluid access from the second delivery main line to the first semiconductor processing chamber; a second delivery main line, the fourth delivery sub-line including a fourth flow controller and configured to provide fluid access from the second delivery main line to the second semiconductor processing chamber; a precursor delivery controller communicatively coupled to the optical absorption sensor, the first flow controller, the second flow controller, the third flow controller, and the fourth flow controller, configured to control the first flow controller and the third flow controller based on the measured concentration of the precursor to deliver a first mixture of the first gas and the second gas to the first semiconductor processing chamber according to a first recipe set point; a precursor delivery controller further configured to control the second flow controller and the fourth flow controller based on the measured concentration of the precursor to deliver a second mixture of the first gas and the second gas to the second semiconductor processing chamber according to a second recipe set point; the precursor delivery system is configured to simultaneously deliver the first mixture and the second mixture; Semiconductor processing systems.

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