Substrate for liquid ejection head and recording device

Abstract

To provide a technique that reduces breakage of an insulating layer due to ESD.SOLUTION: A liquid discharge head substrate includes: a substrate composition layer including a substrate and an intermediate layer including a wiring layer; an element generating energy to discharge liquid by supplying power from the wiring layer; an insulating layer covering the element and the substrate composition layer against a liquid chamber having a liquid outlet; and a conductive layer formed on the insulating layer to cover the element against the liquid chamber. The liquid discharge head substrate is provided with: an electric connection part formed at a position where the wiring layer and the element overlap and electrically connecting the wiring layer and the element; a non-insulating part formed on a side of the intermediate layer of the substrate composition layer and covered by the insulating layer against the liquid chamber; and an opening formed in the insulating layer at a position separated from the element and overlapping the conductive layer and the non-insulating part. The non-insulated part is connected to the conductive layer via the opening.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a substrate for a liquid ejection head. [Background technology]

[0002] A recording device that is equipped with a liquid ejection head and ejects ink onto a recording medium to perform recording is known. A thermal method is known as one of the liquid ejection methods used in such recording devices. In the thermal method, a bubbling phenomenon of the liquid is induced by thermal energy generated by a heating resistor element, and this phenomenon is used to eject the liquid.

[0003] In order to protect an element that generates energy to eject liquid, a technique is known in which a protective layer is interposed between the liquid and the element. For example, in the case of the above-mentioned thermal method, it is known that the heating resistor element is covered with a protective layer (cavitation-resistant layer) in order to protect the heating resistor element from heat and physical and chemical shocks when the liquid bubbles and disappears. The protective layer is generally made of a metal material and constitutes a conductive layer. The conductive layer is provided on an insulating layer between the heating resistor element and the protective layer. Patent Document 1 proposes to reduce the range of the protective layer in order to reduce the probability of destruction of the insulating layer due to electrostatic discharge (ESD) or the like. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 9-1803 Summary of the Invention [Problem to be solved by the invention]

[0005] If the protective layer made of a metal material is made too thick, it can cause the board to warp. Therefore, it is effective to make the film thinner. However, if the conductive layer that serves as the protective layer is made thinner and its area of ​​placement is made smaller, the charge is less likely to have an escape route, which can lead to damage to the insulating layer due to ESD.

[0006] The present invention provides a technique for reducing damage to insulating layers caused by ESD. [Means for solving the problem]

[0007] According to the present invention, A substrate layer including a base material and an intermediate layer including a wiring layer; an element formed on the intermediate layer side of the substrate constituent layer, the element generating energy for ejecting liquid in response to power supplied from the wiring layer; an insulating layer that covers the element and the substrate constituent layer with respect to a liquid chamber having an ejection port for the liquid; a conductive layer formed on the insulating layer so as to cover the element with respect to the liquid chamber; A liquid ejection head substrate comprising: The wiring layer is formed at a position where the wiring layer and the element overlap, an electrical connection portion that electrically connects the wiring layer and the element; a non-insulating portion formed on the intermediate layer side of the substrate constituent layer and covered with the insulating layer with respect to the liquid chamber; an opening formed in the insulating layer at a position spaced apart from the element and overlapping the conductive layer and the non-insulating portion; The non-insulating portion is connected to the conductive layer through the opening. R, The substrate layer has a flat surface, The non-insulating portion and the element are formed on the flat surface. The present invention provides a substrate for a liquid ejection head, comprising: Effect of the Invention

[0008] According to the present invention, it is possible to provide a technique for reducing damage to an insulating layer due to ESD. [Brief description of the drawings]

[0009] [Figure 1] 1 is an external view of a recording apparatus according to an embodiment of the present invention. [Diagram 2] (A) is a perspective view of the recording head and its periphery, and (B) is a cutaway view of the ink ejection orifices and their periphery. [Diagram 3] 1A and 1B are a plan view and a partially enlarged view of an element substrate according to an embodiment of the present invention. [Figure 4] Cross-sectional view taken along line AA in Figure 3. [Diagram 5] Cross-sectional view of line BB in Figure 4. [Figure 6] FIG. 11 is a cross-sectional view showing another configuration example of the element substrate. [Figure 7] FIG. 11 is a cross-sectional view showing another configuration example of the element substrate. [Figure 8] 8A is a partial enlarged view showing another configuration example of an element substrate, and FIG. 8B is a cross-sectional view taken along line CC in FIG. 8A. [Figure 9] FIG. 13 is a partial enlarged view showing another configuration example of the element substrate. [Figure 10] 4A and 4B are partial enlarged views showing another configuration example of an element substrate. [Figure 11] FIG. 11 is a cross-sectional view showing another configuration example of the element substrate. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0011] First Embodiment FIG. 1 is an external view of a recording device 30 according to an embodiment of the present invention. The recording device 30 is an inkjet recording device that ejects ink to record on a recording medium. Note that "recording" includes not only forming meaningful information such as characters and figures, but also forming images, patterns, and the like on a recording medium, regardless of whether the information is meaningful or insignificant, or processing the medium, regardless of whether it is manifested in a way that can be visually perceived by humans. In addition, although a sheet of paper is assumed as the "recording medium" in this embodiment, it may also be cloth, plastic film, and the like.

[0012] In addition, the recording device to which the present invention can be applied is not limited to an inkjet recording device, and can also be applied to, for example, a thermal transfer type recording device such as a melting type or a dye sublimation type. The recording device may also be, for example, a manufacturing device for manufacturing a color filter, an electronic device, an optical device, a microstructure, etc. by a predetermined recording method. The recording device may also be a device that forms a three-dimensional image from 3D data.

[0013] The recording device 30 includes an ink tank 31 and a recording head 32, which are assembled into one unit, and are mounted on a carriage 34. The recording head 32 ejects ink contained in the ink tank 31 onto a recording medium P to perform recording. The carriage 34 can be reciprocated in the direction of the arrow by a drive unit 35. The drive unit 35 includes a lead screw 35a and a guide shaft 35b that extend in the moving direction of the carriage 34. The lead screw 35a engages with a screw hole (not shown) of the carriage 34, and the carriage 34 moves due to its rotation. A motor 35c and a gear train 35d are a rotation mechanism for the lead screw 35a. The guide shaft 35b guides the movement of the carriage 34. An optical sensor 34b that detects a detection target piece 34a of the carriage 34 is disposed at one end of the moving range of the carriage 34, and the detection result is used to control the movement of the carriage 34.

[0014] The transport unit 33 transports the recording medium P. The transport unit 33 includes a motor (not shown) that is a drive source, and a transport roller (not shown) that rotates by the driving force of the motor, and the recording medium P is transported by the rotation of the transport roller.

[0015] The recording device 30 includes an internal power source 36 that supplies power consumed by the recording device 30, and a control circuit 37 that controls the recording device 30. The control circuit 37 records an image on the recording medium P by alternately moving the recording head 32 and ejecting ink by moving the carriage 34, and transporting the recording medium P.

[0016] Fig. 2(A) is a perspective view of an ink tank 31 and a recording head 32 which are made into one unit. The ink tank 31 and the recording head 32 can be separated at the positions indicated by the dashed lines. The recording head 32 has a plurality of ink ejection orifices 32a which eject ink. Fig. 2(B) is a cutaway view of the recording head 32 showing the structure around the ink ejection orifices 32a.

[0017] The recording head 32 has a flow path forming member 32b and an element substrate (substrate for liquid ejection head) 1. The flow path forming member 32b is provided on the element substrate 1, and forms the ink ejection ports 32a, the flow paths 32c for supplying ink to each ink ejection port 32a, and a common liquid chamber 32d. The element substrate 1 is provided with ejection elements 2 corresponding to each ink ejection port 32a. A plurality of ejection elements 2 are provided. The ejection elements 2 of this embodiment are elements that generate energy for ejecting liquid (ink) when supplied with power, and are particularly heat generating resistor elements (electrothermal conversion elements). The electrothermal conversion elements heat the ink when energized to cause it to bubble, and the resulting bubble generating energy causes the ink to be ejected from the ink ejection ports 32a. The ejection elements 2 may be piezoelectric elements instead of electrothermal conversion elements.

[0018] <Element substrate> FIG. 3 is a plan view and a partial enlarged view of the element substrate 1. The element substrate 1 has a rectangular shape in a plan view, and a row of multiple electrode pads 3 is formed at each end in the longitudinal direction. The electrode pads 3 are electrical contacts with an external device (such as a control circuit 37). In the center of the element substrate 1 in the lateral direction, an arrangement region 4 of the ejection elements 2 corresponding to the row of multiple ink ejection ports 32a is formed, and FIG. 3 shows an enlarged view of the periphery of three of these ejection elements 2. The region for each ejection element 2 can be called a pressure generating section in that it generates pressure to eject ink, and it can also be said that three pressure generating sections are shown in FIG. 3. The arrangement region 4 is a pressure generating section in that these pressure generating sections are formed in a row in the longitudinal direction of the element substrate 1. region It can be called.

[0019] The configuration of the element substrate 1 will be further described with reference to Figs. 3 to 5. Fig. 4 is a cross-sectional view taken along line AA in Fig. 3, and Fig. 5 is a cross-sectional view taken along line BB in Fig. 4. Fig. 4 also illustrates a flow path forming member 32b in addition to the element substrate 1. The flow path forming member 32b has a plurality of wall portions 32f, and a liquid chamber (pressure chamber or bubble generating chamber) 32e having an ink ejection port 32a is formed on the element substrate 1 by being partitioned by the wall portions 32f. Note that in this embodiment, the flow path forming member 32b is described as having the ink ejection port 32a. However, the ejection port forming member in which the ink ejection port 32a is formed and the flow path forming member having the wall portions 32f may be formed of different materials or provided as separate members.

[0020] The element substrate 1 is broadly divided into a substrate constituent layer 4A and a substrate constituent layer 4B, and the substrate constituent layer 4B is located between the substrate constituent layer 4A and the flow path forming member 32b. The ejection elements 2 are films formed on the intermediate layer 6 side of the substrate constituent layer (on the substrate constituent layer 4A). The substrate constituent layer 4A includes a base 5 and the intermediate layer 6. The base 5 is a plate-shaped member made of, for example, silicon (Si). A circuit (not shown) for selectively driving each ejection element 2 is formed on the base 5. The circuit includes a driving element made of a semiconductor element such as a switching transistor.

[0021] The intermediate layer 6 has a plurality of wiring layers including wiring layers 7A and 7B. The material of the wiring layers is, for example, a material mainly composed of aluminum, and more specifically, for example, AlCu (copper aluminum). The thickness of the wiring layers 7A and 7B is, for example, about 0.2 μm to 1.0 μm. The intermediate layer 6 constitutes a heat storage layer formed mainly of, for example, SiO. The upper surface of the intermediate layer 6 (the boundary surface with the substrate constituent layer 4B) ) is a flat surface. The element substrate 1 may have a plurality of heat storage layers in which wiring layers are embedded. The thickness of the intermediate layer 6 above the wiring layers 7A and 7B is, for example, about 0.5 μm to 3.0 μm. The intermediate layer 6 may have a configuration in which a plurality of heat storage layers in which wiring layers are embedded are provided.

[0022] The substrate constituent layer 4B includes the ejection element 2, an insulating layer 9, a conductive layer 10, and a non-insulating portion 11. The ejection element 2 is a strip-shaped film having a thickness of, for example, about 10 to 100 nm, and contains, for example, tantalum silicon nitride (TaSiN) as a main component. The ejection element 2 is disposed on the upper surface (surface) of the planarized intermediate layer 6. The ejection element 2 and the wiring layers 7A and 7B are formed at overlapping positions, and are connected between them by a plurality of plugs 8A and 8B (electrical connection parts). The plugs 8A and 8B are formed inside holes (through holes) that penetrate from the upper surface of the intermediate layer 6 to the wiring layers 7A and 7B. The plugs 8A and 8B include, for example, a contact metal film that contacts the corresponding wiring layers 7A and 7B, a barrier metal film, and a plug film that is a main component. The contact metal film is formed of, for example, titanium (Ti) having a thickness of about 10 to 50 nm, and the barrier metal film is formed of, for example, titanium nitride (TiN) having a thickness of about 50 to 100 nm. The plug film is made of a material such as tungsten (W), copper (Cu), aluminum (Al), or an alloy thereof, and is formed to a thickness that allows the hole to be filled.

[0023] The wiring layer 7A is disposed at a position overlapping one end of the ejection element 2, and the wiring layer 7B is disposed at a position overlapping the other end of the ejection element 2. Power is supplied to the ejection element 2, for example, by passing a current through the wiring layer 7A, plug 8A, ejection element 2, plug 8B, and wiring layer 7B. When a current flows in this manner, the ejection element 2 generates heat, and the liquid chamber 32 e The ink supplied to the ink ejection port 32a is bubbled to be ejected from the ink ejection port 32a.

[0024] The insulating layer 9 is a protective layer that covers each of the liquid chambers 32e on the flat surface of the upper surface of the substrate constituent layer 4A over the entire arrangement region 4. Each of the ejection elements 2 and each of the non-insulated portions 11 are also covered with the insulating layer 9 for each of the liquid chambers 32e. The insulating layer 9 is a film having a thickness of, for example, about 100 to 300 nm and containing silicon nitride (SiN) as a main component.

[0025] The conductive layer 10 is an anti-cavitation layer formed on the insulating layer 9 so as to cover the ejection elements 2 with respect to the liquid chamber 32e. The conductive layer 10 has a thickness of, for example, about 100 to 300 nm, and is a film mainly composed of tantalum (Ta), iridium (Ir), or the like. In this embodiment, the conductive layer 10 is disposed separately for each ejection element 2, and each has a rectangular shape in a plan view. By providing the conductive layer 10 for each element to be protected, the area of ​​the conductive layer 10 can be reduced, and the probability of ESD falling can be reduced.

[0026] A layer 12 is laminated on the insulating layer 9 to ensure adhesion to the wall 32f of the flow path forming member 32b. The layer 12 is, for example, a SiCN film with a thickness of about 150 nm. The width W1 of the conductive layer 10 is narrower than the width W2 of the liquid chamber 32e. The conductive layer 10 is provided only inside the liquid chamber 32e and is not in direct contact with the wall 32f. There is no need to consider adhesion to the flow path forming member 32b (wall 32f), and the material of the conductive layer 10 can be selected. Furthermore, by forming the conductive layer 10 thinner and smaller, the occurrence of warping of the element substrate 1 can be reduced.

[0027] The non-insulating portion 11 is, for example, a copper aluminum (AlCu) film having a thickness of about 200 nm. The non-insulating portion 11 may be a semiconductor other than a conductor. The non-insulating portion 11 is formed on the intermediate layer 6 side of the substrate constituent layer 4A, and in this embodiment, is particularly disposed on the flattened upper surface (front surface) of the intermediate layer 6. In this embodiment, the non-insulating portion 11 is formed in a strip shape along the ejection element 2. The insulating layer 9 has an opening 9a formed at a position separated from the ejection element 2 in the substrate surface direction of the element substrate 1 and overlapping with the conductive layer 10 and the non-insulating portion 11. The non-insulating portion 11 is connected to the conductive layer 10 via the opening 9a, and forms a charge removal path for the conductive layer 10 as a countermeasure against ESD. The opening 9a is formed between the wall portion 32f and the ejection element 2 in the substrate surface direction, and can remove charge from the conductive layer 10 at a position close to the ejection element 2 within the range of the liquid chamber 32e.

[0028] That is, for example, when ESD falls on the conductive layer 10 from the ink ejection port 32a, it is possible to reduce the occurrence of dielectric breakdown in the insulating layer 9 by dissipating electric charge from the conductive layer 10 to the non-insulating portion 11. In the case of this embodiment, a plurality of openings 9a are formed in the extension direction of the non-insulating portion 11 that extends along the edge of the ejection element 2, and it is possible to more effectively cause the transfer of electric charge from the conductive layer 10 to the non-insulating portion 11.

[0029] In this embodiment, the non-insulating portion 11 and the ejection element 2 are formed on the same flat surface of the intermediate layer 6. In addition, the structure is such that power is supplied to the ejection element 2 from the wiring layers 7A and 7B provided inside the intermediate layer 6 via the plugs 8A and 8B located in the normal direction of the ejection element 2. Therefore, the non-insulating portion 11 can be arranged near the ejection element 2 without interfering with the power supply path to the ejection element 2. Even if ESD falls on the conductive layer 10, the charge can be released to the non-insulating portion 11 in the immediate vicinity of the ejection element 2. In particular, compared to a structure in which the wiring layer that supplies power to the ejection element 2 is provided on the upper surface side of the intermediate layer 6, it is easier to ensure the degree of freedom in the arrangement of the non-insulating portion 11. The shortest distance L between the non-insulating portion 11 and the ejection element 2 is, for example, 1.0 μm or more and 20 μm or less. In the illustrated example, the shortest distance L is the distance from the edge of the non-insulating portion 11 to the edge of the ejection element 2 in the substrate surface direction of the element substrate 1.

[0030] Second Embodiment By electrically connecting the non-insulating portion 11 to the wiring layer and the base 5, it is possible to make it easier for charges to escape from the conductive layer 10, thereby improving the protective performance of the insulating layer 9 against ESD. Figure 6 is a cross-sectional view of an element substrate 1 showing an example of the configuration.

[0031] In the example of FIG. 6, a plurality of wiring layers 7C to 7F are formed on the intermediate layer 6. layer Here, the number is four, but is not limited to this. Three or more layers are particularly advantageous in terms of discharging electricity from the conductive layer 10. The non-insulating portions 11 are electrically connected to the wiring layers 7C-7F via plugs 8C-8G, and are also grounded to the base material 5. When ESD falls on the conductive layer 10, the charge can be released to the wiring layers 7C-7F and the base material 5.

[0032] Moreover, from the viewpoint of reducing the manufacturing load, the wiring layers 7A and 7B electrically connected to the ejection elements 2 and the wiring layer 7C electrically connected to the non-insulating portion 11 may be formed in the same manufacturing process. In the element substrate 1 thus formed, the wiring layers 7A and 7B and the wiring layer 7C are provided at the same position in the substrate surface direction of the element substrate 1. Similarly, the plugs 8A and 8B electrically connected to the ejection elements 2 and the plug 8C electrically connected to the non-insulating portion 11 may be formed in the same manufacturing process.

[0033] <Third embodiment> The conductive layer 10 may include a plurality of layers made of different materials. FIG. 7 is a cross-sectional view of the element substrate 1 showing an example. In the example of FIG. 7, the conductive layer 10 has a three-layer structure of layers 10a to 10c, and the total thickness is, for example, 200 nm. The material of the layer 10a is tantalum (Ta), the material of the layer 10b is indium (Ir), and the material of the layer 10c is tantalum (Ta). Therefore, in the example of FIG. 7, the conductive layer 10 is formed from layers of two types of materials. It is possible to form the conductive layer 10 by making the most of the characteristics of each material.

[0034] <Fourth embodiment> A plurality of non-insulating portions 11 may be provided around the ejection element 2. FIG. 8(A) is a plan view of the element substrate 1 around the ejection element 2, and FIG. 8(B) is a cross-sectional view taken along the line CC in FIG. 8(A). In the example of FIG. 8(A) and FIG. 8(B), a total of two non-insulating portions 11 are formed on both sides of the ejection element 2 in the substrate surface direction, sandwiching the ejection element 2. The non-insulating portions 11 are provided in parallel strips extending in the substrate surface direction along the ejection element 2. An opening 9a is formed for each non-insulating portion 11, and the conductive layer 10 and each non-insulating portion 11 are connected. When ESD falls on the conductive layer 10, the charge can be released to the two non-insulating portions 11, which can further reduce dielectric breakdown.

[0035] 8(B), similarly to the second embodiment, the non-insulating portion 11 is electrically connected to the wiring layers and the base 5. One non-insulating portion 11 is electrically connected to the wiring layers 7C-7F via plugs 8C-8G and is also grounded to the base 5, while the other non-insulating portion 11 is electrically connected to the wiring layers 7C'-7F' via plugs 8C'-8G' and is also grounded to the base 5. When ESD falls on the conductive layer 10, the charge can be released to the wiring layers 7C-7F and 7C'-7F' and the base 5.

[0036] The number of non-insulating portions 11 is not limited to two. In the example of Fig. 9, four non-insulating portions 11 are provided and are arranged on all four sides of the ejection element 2 in the substrate surface direction so as to surround the ejection element 2. This makes it easier for electric charge to escape from the conductive layer 10 to each non-insulating portion 11, further reducing dielectric breakdown.

[0037] <Fifth embodiment> The non-insulating portion 11 may be electrically connected to the electrode pad 3. FIG. 10(A) shows an example. The non-insulating portion 11 is connected to the electrode pad 3 via a wiring layer 11a. Adjacent non-insulating portions 11 are also connected by the wiring layer 11a. The wiring layer 11a is formed, for example, on the flattened upper surface of the intermediate layer 6 and extends in the substrate surface direction. This allows the wiring layer 11a and the electrode pad 3 to be formed in the same layer. The wiring layer 11a is covered with an insulating layer 9.

[0038] By grounding the electrode pad 3, the conductive layer 10 is grounded via the non-insulating portion 11 and the wiring layer 11a. In this embodiment, when grounding the conductive layer 10, it is not necessary to form a static elimination path in the thickness direction within the intermediate layer 6, and this improves the degree of freedom in arranging the wiring layer within the intermediate layer 6. In addition, by connecting adjacent non-insulating portions 11 via the wiring layer 11a, in a configuration in which a plurality of conductive layers 10 are grounded using the electrode pads 3, it is possible to reduce the number of wiring layers 11a and electrode pads 3.

[0039] FIG. 10B shows another example. In the example of FIG. 10B, the non-insulating portion 11A is formed in a ring shape so as to surround the ejection element 2. The non-insulating portion 11A is connected to the electrode pad 3 via the wiring layer 11a. Adjacent non-insulating portions 11A are also connected by the wiring layer 11a. The wiring layer 11a is formed, for example, on the flattened upper surface of the intermediate layer 6, and extends in the substrate surface direction. The wiring layer 11a is covered by the insulating layer 9. By forming the non-insulating portion 11A so as to surround the ejection element 2, the non-insulating portion 11A can be easily connected to the conductive layer 10 and the electrode pad 3 via the wiring layer 11a. A This makes it easier for electric charges to escape, further reducing insulation breakdown.

[0040] Sixth Embodiment The non-insulating portion 11 may be formed from the same material as the ejection elements 2. Fig. 11 shows an example. The non-insulating portion 11B in Fig. 11 is formed from the same material and to the same film thickness (e.g., 20 nm) as the ejection elements 2. In the manufacturing process of the element substrate 1, the non-insulating portion 11B and the ejection elements 2 can also be formed simultaneously in the same layer, which can improve the productivity of the element substrate 1.

[0041] Since the non-insulating portion 11B has the same film thickness as the ejection element 2, the step between the insulating layer 9 and the conductive layer 10 in the non-insulating portion 11B and the surrounding area can be reduced. Since the flatness of the conductive layer 10 is improved overall, the flow path resistance to the ink in the liquid chamber 32e can be reduced. Since the flatness of the insulating layer 9 is improved, the non-insulating portion 11B and the ejection element 2 can be arranged closer to each other while being spaced apart.

[0042] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0043] 1 element substrate, 2 ejection element, 9 insulating layer, 9a opening, 10 conductive layer, 11 non-insulating portion

Claims

1. A substrate layer including a base material and an intermediate layer including a wiring layer; an element formed on the intermediate layer side of the substrate constituent layer, the element generating energy for ejecting liquid in response to power supplied from the wiring layer; an insulating layer that covers the element and the substrate constituent layer with respect to a liquid chamber having an ejection port for the liquid; a conductive layer formed on the insulating layer so as to cover the element with respect to the liquid chamber; A liquid ejection head substrate comprising: The wiring layer is formed at a position where the wiring layer and the element overlap, an electrical connection portion that electrically connects the wiring layer and the element; a non-insulating portion formed on the intermediate layer side of the substrate constituent layer and covered with the insulating layer with respect to the liquid chamber; an opening formed in the insulating layer at a position spaced apart from the element and overlapping the conductive layer and the non-insulating portion; the non-insulating portion is connected to the conductive layer through the opening, The substrate layer has a flat surface, The non-insulating portion and the element are formed on the flat surface. A substrate for a liquid ejection head.

2. 2. The liquid ejection head substrate according to claim 1, the opening is formed at a position between a wall portion that defines the liquid chamber and the element; A substrate for a liquid ejection head.

3. 3. The liquid ejection head substrate according to claim 1, A plurality of the elements are provided, The conductive layer is disposed separately for each of the elements. A substrate for a liquid ejection head.

4. 4. The liquid ejection head substrate according to claim 1, The width of the conductive layer is narrower than the width of the liquid chamber. A substrate for a liquid ejection head.

5. 5. The liquid ejection head substrate according to claim 1, the electrical connection portion is a plug formed inside a through hole penetrating between the wiring layer and the element in the intermediate layer; A substrate for a liquid ejection head.

6. 6. The liquid ejection head substrate according to claim 1, The non-insulating portion is electrically connected to the base material. A substrate for a liquid ejection head.

7. 7. The liquid ejection head substrate according to claim 1, the intermediate layer includes a plurality of wiring layers; The plurality of wiring layers include the wiring layer for supplying power to the element; A wiring layer to which the non-insulating portion is electrically connected. A substrate for a liquid ejection head.

8. 8. The liquid ejection head substrate according to claim 1, An electrode pad is provided which is connected to the non-insulated portion. A substrate for a liquid ejection head.

9. 9. The liquid ejection head substrate according to claim 1, The conductive layer includes multiple layers of different materials. A substrate for a liquid ejection head.

10. 10. The liquid ejection head substrate according to claim 1, the element is a heating resistor element, The non-insulating portion is formed of the same material as the heating resistor element. A substrate for a liquid ejection head.

11. 11. The liquid ejection head substrate according to claim 1, The element and the non-insulating portion are spaced apart from each other by a minimum distance of 20 μm or less. A substrate for a liquid ejection head.

12. 12. The liquid ejection head substrate according to claim 1, the non-insulating portion is provided to extend in a substrate surface direction of the liquid ejection head substrate, A plurality of the openings are formed in the insulating layer. A substrate for a liquid ejection head.

13. 12. The liquid ejection head substrate according to claim 1, The non-insulating portion is provided in a plurality of portions around the element, A plurality of the openings are formed in the insulating layer. A substrate for a liquid ejection head.

14. 12. The liquid ejection head substrate according to claim 1, The non-insulating portion is provided so as to surround the element, A plurality of the openings are formed in the insulating layer. A substrate for a liquid ejection head.

15. 15. The liquid ejection head substrate according to claim 12, The plurality of openings are provided along an edge of the element. A substrate for a liquid ejection head.

16. A recording device having a recording head that ejects ink onto a recording medium, The recording head includes a substrate, The substrate is A substrate layer including a base material and an intermediate layer including a wiring layer; an element formed on the intermediate layer side of the substrate constituent layer, the element generating energy for ejecting ink in response to power supplied from the wiring layer; an insulating layer that covers the element and the substrate constituent layer with respect to a liquid chamber having an ejection port of the ink; a conductive layer formed on the insulating layer so as to cover the element with respect to the liquid chamber, The wiring layer is formed at a position where the wiring layer and the element overlap, The substrate is an electrical connection portion that electrically connects the wiring layer and the element; a non-insulating portion formed on the intermediate layer side of the substrate constituent layer and covered with the insulating layer with respect to the liquid chamber; an opening formed in the insulating layer at a position spaced apart from the element and overlapping the conductive layer and the non-insulating portion; the non-insulating portion is connected to the conductive layer through the opening, The substrate layer has a flat surface, The non-insulating portion and the element are formed on the flat surface. A recording apparatus comprising:

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