Film removal device

Abstract

To realize a film removal device with high processing efficiency while suppressing equipment costs while preventing an object to be processed from becoming hot.SOLUTION: A film removal device (100) includes a vacuum vessel (10), an antenna (4) provided outside the vacuum vessel (10), a magnetic field introduction window (WR), a first disc (20) within the vacuum vessel (10), a second disc (30) provided on the first disc (20), and a holding member (40) holding a workpiece (W) provided on the second disk (30), and in a plan view, a perpendicular line (VH) is located perpendicular to a magnetic field introduction window (WR) through the third center point (P3) of the magnetic field introduction window (WR) in a vertical line placement area (VR) from the first tangent (H1) of the first disc (20) to the second tangent (H2) of the orbital circle (32) of the second center point (P2) of the second disc (30) parallel to the first tangent (H1).SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a film removal device that removes a film from a workpiece on which a film has been formed by using plasma. [Background technology]

[0002] Conventionally, there are known techniques for removing a coating from a workpiece (subject to be processed) on which the coating is formed. For example, Patent Document 1 discloses a coating removal device that irradiates an ion flow onto a coating material to remove the coating from the coating material. The coating removal device described in Patent Document 1 places the coated coating material in an ion flow concentration area where two or more ion flows overlap, and removes the coating from the coating material by irradiating the ion flow onto the coating material. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2016 / 163278 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the conventional technology described above, since the coating material is placed in the ion flow concentration area and treated, there is a problem that the coating material becomes hot. In addition, since the coating material is continuously irradiated with an ion flow, the temperature of the coating material rises significantly. Furthermore, in order to increase the amount of coating material to be removed, it is necessary to expand the area of ​​the ion flow concentration area. In order to expand the area of ​​the ion flow concentration area, it is necessary to enlarge the ion source. Since the coating removal device described in Patent Document 1 requires multiple ion sources, in order to increase the amount of coating material to be removed, the multiple ion sources must be enlarged, which results in a problem of a significant increase in the cost of the device.

[0005] One aspect of the present invention has been made in consideration of the above-mentioned problems in the conventional art, and aims to realize a film removal apparatus that prevents the workpiece from becoming too hot, reduces equipment costs, and has high processing efficiency. [Means for solving the problem]

[0006] In order to solve the above problems, a film removal apparatus according to one aspect of the present invention includes a vacuum vessel that accommodates a workpiece therein, an antenna that is provided outside the vacuum vessel and generates a high-frequency magnetic field, a magnetic field introduction window provided on a wall surface of the vacuum vessel that introduces the high-frequency magnetic field into the vacuum vessel to generate plasma inside the vacuum vessel, and a stage that is installed inside the vacuum vessel and that places a plurality of the workpieces thereon, the stage including a first circular plate that rotates around a first central point that is the center, and The device has a first disk, a plurality of second disks arranged along the outer periphery of the first disk and rotating around a second center point which is the center of each second disk, and a plurality of holding members arranged on the second disk and each holding the workpiece, and in a planar view, a perpendicular line passing through the center of the magnetic field introduction window and perpendicular to the magnetic field introduction window is located in a perpendicular line arrangement region from a first tangent line touching the outer periphery of the first disk to a second tangent line which is a tangent line to the orbital circle of the second center point which is parallel to the first tangent line and is located on the first tangent side of the first center point. Effect of the Invention

[0007] According to one aspect of the present invention, which has been made in consideration of the above-mentioned conventional problems, it is possible to realize a film removal apparatus that prevents the workpiece from becoming too hot, reduces equipment costs, and has high processing efficiency. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a plan view of a film removal device according to a first embodiment of the present invention. [Diagram 2] 2 is a cross-sectional view of the film removal apparatus taken along a combination of cross sections AA and BB in FIG. 1. [Diagram 3] FIG. 4 is a plan view of a magnetic field introduction window of the film removal device. [Figure 4] 4 is a CC cross-sectional view of the magnetic field introduction window in FIG. 3. [Diagram 5] 13 is a plan view showing a modified example of the magnetic field introduction window of the film removal apparatus. FIG. [Figure 6] 1 is a graph showing the relationship between the distance from the antenna and the plasma density. [Figure 7] FIG. 2 is a plan view showing a plasma region of the film removal apparatus. [Figure 8] FIG. 5 is a plan view of a film removal device according to a second embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] [Embodiment 1] FIG. 1 is a plan view of a film removal apparatus 100 according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view of the film removal apparatus 100 showing a combination of the AA cross section and the BB cross section of FIG. 1, where range M in FIG. 2 is the AA cross section of FIG. 1, and range N in FIG. 2 is the BB cross section of FIG. 1. The film removal apparatus 100 is a film removal apparatus that removes a coating from a processing object (workpiece W) on which a coating is formed, using plasma. The workpiece W is, for example, a metal part made as a base material, on whose surface a coating made of an inorganic substance is formed. One embodiment of the present invention will be described in detail below.

[0010] [Configuration of the film removal device] A schematic configuration of the film removal device 100 will be described with reference to Figures 1 and 2. In Figure 1, the direction from the plasma source 1 toward the vacuum container 10 is the x-axis direction, the direction in which the antenna 4 extends is the z-axis direction, and the direction perpendicular to the x-axis direction and the z-axis direction is the y-axis direction. In Figure 1, the holding member 40 is illustrated only on one second disk 30, and the holding members 40 provided on the other second disks 30 are omitted. In Figure 1, the workpiece W is illustrated only on one holding member 40, and the workpieces W held by the other holding members 40 are omitted. The same applies to Figures 7 and 8.

[0011] As shown in FIGS. 1 and 2, the film removal apparatus 100 includes a plasma source 1 and a vacuum vessel 10. The plasma source 1 and the vacuum vessel 10 include ...

[0012] (Plasma source) The plasma source 1 is an ICP (inductively coupled plasma device) that generates high density plasma in a vacuum chamber 10 by inductive coupling. The plasma source 1 has a density of, for example, 1e11 to 1e12 / cm 3 It is possible to generate a high density plasma.

[0013] The plasma source 1 is provided outside the vacuum vessel 10. The plasma source 1 includes a matching box 2, a shielding box 3, an antenna 4, and a magnetic field introduction window WR. The matching box 2 is an electric circuit that matches the power from the power source D1 according to the load. The matching box 2 efficiently transmits power from the power source D1 to the antenna 4. The shielding box 3 houses the antenna 4 and the magnetic field introduction window WR inside, and prevents the high-frequency magnetic field generated from the antenna 4 from leaking to the outside. The shielding box 3 is provided between the matching box 2 and the vacuum vessel 10. An opening 3b is formed in a wall surface 3a of the shielding box 3. The opening 3b is formed at a position corresponding to the opening 10b formed in the wall surface 10a of the vacuum vessel 10, so as to open larger than the opening 10b.

[0014] In the first embodiment, the film removal apparatus 100 includes two plasma sources 1 arranged in the x-axis direction with the vacuum vessel 10 in between, but is not limited to this. Since the film removal process can be performed with only one plasma source 1, it is sufficient that the film removal apparatus 100 includes at least one plasma source 1.

[0015] (antenna) The antenna 4 generates a high-frequency magnetic field. The antenna 4 is a metal pipe antenna extending in the Z direction, and is arranged in the shielding box 3 along the magnetic field introduction window WR. As shown in FIG. 2, the length L1 of the antenna 4 in the height direction (Z direction) of the workpiece W is longer than the height L2 of the workpiece W. This allows the workpiece W to be positioned within the area where plasma is generated even in the height direction of the workpiece W, so that the entire workpiece W can be subjected to the film removal treatment. By changing the length of the antenna 4, the film removal treatment area can be increased, and plasma can be generated that matches the size of the workpiece W.

[0016] The antenna 4 can be curved as necessary. This allows the distance from each point of the antenna 4 to the magnetic field introduction window WR to be changed, and the plasma density in the z-axis direction generated in the vacuum vessel 10 to be adjusted.

[0017] (magnetic field introduction window) The magnetic field introduction window WR introduces the high frequency magnetic field generated by the antenna 4 into the interior 11 of the vacuum vessel 10 in order to generate plasma inside the vacuum vessel 10. The magnetic field introduction window WR is constituted by a magnetic field introduction window component 5 and is a part of the magnetic field introduction window component 5. The magnetic field introduction window WR is disposed so as to be approximately parallel to the antenna 4. The magnetic field introduction window component 5 is disposed in an opening 3b formed in a wall surface 3a of the shielding box 3, and the magnetic field introduction window component 5 is provided on the wall surface 10a of the vacuum vessel 10 so as to cover the opening 10b of the vacuum vessel 10.

[0018] FIG. 3 is a plan view of the magnetic field introduction window WR of the film removal apparatus 100 when the plasma source 1 is viewed from the vacuum vessel 10 side. FIG. 4 is a CC cross-sectional view of FIG. 3. More specifically, a cross-sectional view 1001 of FIG. 4 shows a CC cross-sectional view of the film removal apparatus 100, a cross-sectional view modification 1002 shows a modification of the cross-sectional view 1001, and a cross-sectional view modification 1003 shows another modification of the cross-sectional view 1001. Note that FIG. 3 illustrates the antenna 4 so that the positional relationship between the magnetic field introduction window WR and the antenna 4 can be understood. In addition, each view of FIG. 4 illustrates the antenna 4, a part of the shielding box 3, and a part of the vacuum vessel 10 so that the positional relationship between the magnetic field introduction window WR, the antenna 4, the shielding box 3, and the vacuum vessel 10 can be understood.

[0019] 3 and 4, the magnetic field introduction window forming part 5 includes a metal plate 6 and a dielectric plate 7. On the wall surface 3a of the shielding box 3, the metal plate 6 and the dielectric plate 7 are provided in this order as the magnetic field introduction window forming part 5 from the vacuum vessel 10 side toward the antenna 4 side.

[0020] 4, the metal plate 6 is provided on the wall surface 10a of the vacuum vessel 10 so as to cover the opening 10b of the vacuum vessel 10. Moreover, the metal plate 6 is disposed on the wall surface 10a of the vacuum vessel 10 by being placed at the opening 3b formed in the wall surface 3a of the shielding box 3.

[0021] As shown in the cross-sectional view 1001 of Fig. 3 and Fig. 4, the metal plate 6 has a plurality of slits 61 penetrating the metal plate 6 in the x-axis direction. Each of the plurality of slits 61 is a long and narrow rectangular opening extending in the y-axis direction. The plurality of slits 61 are arranged in a line in the z-axis direction. The slits 61 are formed in the metal plate 6 so that the longitudinal direction of the antenna 4 and the longitudinal direction of the slits 61 are at right angles.

[0022] The dielectric plate 7 is placed in contact with the metal plate 6 from the atmospheric side (antenna 4 side) of the metal plate 6 so as to cover the multiple slits 61. The dielectric plate 7 is made of a dielectric substance. For example, ceramics or glass can be used as the material for the dielectric plate 7. As shown in Figs. 3 and 4, the metal plate 6 and the dielectric plate 7 in the region where the slits 61 are formed in the magnetic field introduction window forming part 5 constitute the magnetic field introduction window WR. In other words, the magnetic field introduction window WR is composed of the metal plate 6 having the multiple slits 61 and the dielectric plate 7 that covers the slits 61 placed on the atmospheric side of the metal plate 6.

[0023] The high-frequency magnetic field generated by the antenna 4 is supplied to the inside 11 of the vacuum vessel 10 through the dielectric plate 7 and the multiple slits 61 in the metal plate 6 at the magnetic field introduction window WR. Since the multiple slits 61 are blocked by the dielectric plate 7, the vacuum in the inside 11 of the vacuum vessel 10 is maintained.

[0024] By forming the magnetic field introduction window WR not only with the dielectric plate 7 but also with the metal plate 6 in which the slits 61 are formed, it is possible to increase the mechanical strength of the magnetic field introduction window WR while ensuring the function of introducing a high-frequency magnetic field into the vacuum vessel 10. This makes it possible to reduce the risk of the dielectric plate 7 being damaged.

[0025] Furthermore, by introducing a high-frequency magnetic field generated from an antenna 4 arranged outside the vacuum vessel 10 into the interior 11 of the vacuum vessel 10 through a magnetic field introduction window WR, plasma can be generated inside the vacuum vessel 10. The plasma has a density distribution equivalent to the magnetic field distribution that is inversely proportional to the distance from the antenna 4 in the x-axis direction, and also has a highly directional distribution that spreads in the y-axis direction. This allows high-density plasma to be generated widely inside the vacuum vessel 10, allowing the workpiece W to be processed efficiently.

[0026] (Modification of the positional relationship between the magnetic field introduction window, the shielding box, and the vacuum vessel) Based on a modified cross-sectional view 1002 and a modified cross-sectional view 1003 in FIG. 4, modifications of the positional relationship between the magnetic field introducing window WR, the shielding box 3, and the vacuum vessel 10 will be described.

[0027] As shown in the cross-sectional view modification 1002 of FIG. 4, in the film removal apparatus 100, the opening 3b of the wall surface 3a of the shielding box 3 may be formed at a position corresponding to the opening 10b formed in the wall surface 10a of the vacuum vessel 10, with a size that is approximately the same as the opening 10b. In this case, the magnetic field introduction window component 5 is provided on the wall surface 3a of the shielding box 3 so as to cover the opening 3b formed in the wall surface 3a of the shielding box 3. More specifically, the metal plate 6 of the magnetic field introduction window component 5 constituting the magnetic field introduction window WR is provided on the wall surface 3a of the shielding box 3 so as to block the opening 3b. As described above, since the opening 3b is formed on the wall surface 3a of the shielding box 3 at a position corresponding to the opening 10b of the wall surface 10a of the vacuum vessel 10, the magnetic field introduction window WR, which is a part of the magnetic field introduction window component 5, can be regarded as being provided on the wall surface 10a of the vacuum vessel 10.

[0028] In addition, in the film removal apparatus 100, as shown in a cross-sectional view modification 1003 in Fig. 4, a shielding box 3 having an open wall surface 3a on the vacuum vessel 10 side may be used. In this case, the metal plate 6 of the magnetic field introduction window forming part 5 is placed on the wall surface 10a of the vacuum vessel 10 so as to cover the opening 10b formed in the wall surface 10a of the vacuum vessel 10. Furthermore, by placing the wall surface 3a on the surface of the metal plate 6 opposite the vacuum vessel 10 at a position other than the magnetic field introduction window WR, the shielding box 3 is placed on the wall surface 3a of the vacuum vessel 10 via the metal plate 6.

[0029] Even if the configuration of the CC cross-sectional view of the film removal apparatus 100 is changed to the configuration shown in cross-sectional view variant 1002 and cross-sectional view variant 1003 in Figure 4, the same effect can be achieved as with the film removal apparatus 100 having the configuration shown in cross-sectional view 1001.

[0030] (Modification of the magnetic field introduction window) A modified example of the magnetic field introduction window WR will be described with reference to Fig. 5. Fig. 5 is a plan view showing a magnetic field introduction window WRA which is a modified example of the magnetic field introduction window WR of the film removal apparatus 100. Fig. 5 illustrates the antenna 4 so that the positional relationship between the magnetic field introduction window WRA and the antenna 4 can be seen. As shown in Fig. 5, the magnetic field introduction window WRA differs from the magnetic field introduction window WR in that it includes an opening 63 instead of the slit 61, but is otherwise similar to the magnetic field introduction window WR.

[0031] As shown in FIG. 5, the magnetic field introduction window component 5A includes a metal plate 6A and a dielectric plate 7. The metal plate 6A has one opening 63 corresponding to the opening 10b of the vacuum vessel 10. In the magnetic field introduction window component 5A, the metal plate 6A and the dielectric plate 7 in the region where the opening 63 is formed form the magnetic field introduction window WRA. In this case, the magnetic field introduction window WRA is essentially formed only by the dielectric plate 7. In other words, the magnetic field introduction window WRA for introducing a high-frequency magnetic field into the vacuum vessel 10 is composed of at least the dielectric plate 7. Even if the slit 61 is not formed in the metal plate 6 as in the magnetic field introduction window WRA, plasma can be generated in the interior 11 of the vacuum vessel 10 by the plasma source 1. In this way, by providing the magnetic field introduction window WRA with an opening 63 of a size corresponding to the opening 10b of the vacuum vessel 10, many high-frequency magnetic fields can be introduced into the vacuum vessel 10.

[0032] (vacuum container) As shown in Figures 1 and 2, a vacuum vessel 10 accommodates a workpiece W in an interior 11. The interior 11 of the vacuum vessel 10 is evacuated by a vacuum pump 8, and a gas is introduced into the interior 11 of the vacuum vessel 10. The gas introduced into the interior 11 of the vacuum vessel 10 is not particularly specified, and any gas can be used as long as it can generate plasma capable of removing a film from the workpiece W. The vacuum vessel 10 is, for example, a box-shaped vessel made of metal. As described above, an opening 10b penetrating the wall surface 10a of the vacuum vessel 10 in the thickness direction is formed. The vacuum vessel 10 is electrically grounded. A stage S is provided within the vacuum vessel 10.

[0033] (stage) A plurality of workpieces W are placed on the stage S. The stage S has a first circular plate 20 and a second circular plate 30. The first circular plate 20 rotates around a first center point P1, which is the center. The first circular plate 20 rotates around the first center point P1 in, for example, the direction indicated by the arrow Q1.

[0034] A plurality of second disks 30 are provided on the first disk 20 along the outer periphery of the first disk 20. The second disks 30 rotate around the second center point P2, which is their respective centers. The second disks 30 rotate around the second center point P2 in the direction indicated by the arrow Q2, for example. As the first disk 20 rotates around the first center point P1, the second center point P2 moves on an orbital circle 32.

[0035] A plurality of holding members 40 are provided on the second circular plate 30 along the outer periphery of the second circular plate 30. Each of the plurality of holding members 40 holds a workpiece W. Furthermore, the holding members 40 rotate on their axes. The holding members 40 rotate on their axes in the direction indicated by the arrow Q3, for example.

[0036] 2, the workpiece W is connected to a pulse power source D2 via a first disk 20, a second disk 30, and a holding member 40, and a bias voltage can be applied to the workpiece W. By using the bias voltage, for example, the energy of ions in the plasma in the vacuum vessel 10 when they are incident on the workpiece W can be controlled, thereby controlling the removal of the film from the workpiece W.

[0037] The diameter of the second disk 30 is smaller than the radius of the first disk 20. This allows a larger number of workpieces W to be processed. In addition, in FIG. 1, the second disk 30 is inscribed in the first disk 20, but this is not limited to the above. For example, the second disk 30 may be located on the first disk 20 so that the second disk 30 is included within the first disk 20, or the second center point P2 of the second disk 30 may be located on the first disk 20, and a part of the outer periphery of the second disk 30 may be located outside the outer periphery of the first disk 20.

[0038] [Positional relationship between the magnetic field introduction window and the stage] In a plan view in the z-axis direction (height direction of the workpiece W), the magnetic field introducing window WR and the stage S are disposed so that a perpendicular line VH that passes through the third center point P3 of the magnetic field introducing window WR and is perpendicular to the magnetic field introducing window WR touches the outer periphery of the first circular plate 20 at a tangent point T1. In other words, the perpendicular line VH coincides with the first tangent line H1 that touches the first circular plate 20 at the tangent point T1. The third center point P3 of the magnetic field introducing window WR approximately coincides with the center point of the antenna 4.

[0039] By arranging the magnetic field introduction window WR and the stage S in this manner, many workpieces W can be included in the plasma region PR1 described below. This allows plasma processing to be performed on many workpieces W even with one plasma source 1.

[0040] (Plasma region) The plasma region PR1 will be described with reference to Fig. 6 and Fig. 7. The plasma region PR1 refers to the region where plasma is generated. Fig. 6 is a graph showing the relationship between the distance from the antenna 4 and the plasma density. The horizontal axis indicates the distance from the antenna 4, and the vertical axis indicates the plasma density. Fig. 7 is a plan view showing the plasma region PR1 of the film removal apparatus 100.

[0041] The plasma region PR1 expands as the distance from the antenna 4 increases. However, as shown in FIG. 6, the plasma density decreases as the distance from the antenna 4 increases. If the plasma density becomes too low, the processing efficiency decreases. Therefore, the film removal device 100 uses a plasma density with a relative value of the plasma density of about 0.1 to 0.5. This makes it possible to perform the film removal process in a wide plasma region PR1 with high plasma density.

[0042] 6, the plasma density used in the film removal apparatus 100 has a small gradient and is stable with respect to the change in distance from the antenna 4, so that a uniform film removal process can be performed. Furthermore, since plasma with a relatively low plasma density is used, the film removal process can be performed without an extreme change in plasma density between the plasma region PR1 and a non-plasma generation region PR2 (described later) in the vacuum vessel 10.

[0043] The plasma region PR1 and the plasma non-generation region PR2, which is the region other than the plasma region PR1 in the vacuum vessel 10, are distributed, for example, as shown in Fig. 7. As shown in Fig. 7, if the magnetic field introduction window WR and the stage S are arranged so that the junction T1 is located at a position where the width L3 of the plasma region PR1 is about twice the width L4 of the slit 61, the plasma region PR1 having a stable plasma density can be formed.

[0044] [Operation] First, the workpiece W is held by each holding member 40 on the second disk 30. Next, plasma is generated in the vacuum vessel 10 by the plasma source 1, the first disk 20 is rotated about the first center point P1, the second disk 30 is rotated about the second center point P2, and the holding members 40 are rotated on their axes.

[0045] As the first circular plate 20 rotates about the first center point P1, the workpiece W is alternately positioned between the plasma region PR1 and the plasma non-generation region PR2, as shown in Fig. 7. Therefore, the workpiece W is not continuously but intermittently exposed to the plasma inside 11 of the vacuum vessel 10. This allows the film removal process to proceed in the plasma region PR1, and the temperature rise of the workpiece W can be suppressed at the time when the workpiece W leaves the plasma region PR1, which is located in the plasma non-generation region PR2. In this way, in the film removal apparatus 100, the workpiece W is unlikely to become too hot, since there is a timing when the workpiece W leaves the plasma region PR1.

[0046] In addition, the second disk 30 rotates around the second center point P2 and the holding member 40 rotates on its axis, so that the workpiece W is alternately exposed to areas of high plasma density and areas of low plasma density while rotating, and is subjected to the film removal treatment. This enables uniform film removal.

[0047] The rotation speeds of the first and second disks 20, 30 are determined according to the temperature of the workpiece W. Specifically, for example, an upper limit temperature of the workpiece W is set, and the rotation speeds are set in consideration of the temperature rise value of the workpiece W so that the temperature of the workpiece W does not reach the upper limit temperature.

[0048] (effect) In the film removal apparatus 100, since an ICP is employed, high density plasma can be generated, and film removal processing can be performed with one plasma source 1, so that the cost of the apparatus can be reduced.

[0049] In the film removal apparatus 100, the magnetic field introduction window WR and the stage S are arranged so that the perpendicular line VH is approximately aligned with the first tangent line H1 of the first disk 20, and thus plasma can be generated so that a plasma region PR1 with high plasma density spreads near the tangent line of the first disk 20. This expands the processing range of one plasma source 1, and allows many workpieces W to be processed. In addition, since the workpieces W can be positioned within the plasma region PR1 for a long period of time, the time required for the film removal process can be shortened, and the efficiency of the film removal process is improved.

[0050] In the film removal apparatus 100, a plurality of second disks 30 are provided along the outer periphery of the first disk 20, and a plurality of holding members 40 are provided along the outer periphery of each of the second disks 30. This makes it possible to increase the number of workpieces W that can be loaded into the vacuum vessel 10, and therefore to increase the number of workpieces W that can be processed at one time.

[0051] In the film removal apparatus 100, the first disk 20 rotates in the vacuum vessel 10, so that the workpiece W is alternately positioned in the plasma region PR1 and the plasma non-generation region PR2. This allows the workpiece W to be intermittently exposed to the plasma, which makes it possible to prevent the workpiece W from becoming too hot.

[0052] Furthermore, if the distance between the plasma source 1 and the workpiece W is short, the workpiece W is likely to become hot. In contrast, in the film removal device 100, the magnetic field introduction window WR and the stage S are arranged so that the perpendicular line VH approximately coincides with the tangent line of the first circular plate 20. As a result, the distance between the plasma source 1 and the workpiece W is greater than when the magnetic field introduction window WR and the stage S are arranged so that the perpendicular line VH passes through the first center point P1 of the first circular plate 20, and therefore the film removal process can be performed without drastically increasing or decreasing the temperature of the workpiece W.

[0053] As described above, the film removal apparatus 100 can perform efficient film removal processing with a small number of plasma generation sources while preventing the workpiece W from becoming too hot.

[0054] [Embodiment 2] Another embodiment of the present invention will be described below with reference to Fig. 8. Fig. 8 is a plan view of a film removal apparatus 100A according to a second embodiment of the present invention. For ease of explanation, the same reference numerals are used for members having the same functions as those described in the previous embodiment, and the explanations thereof will not be repeated. As shown in Fig. 8, the film removal apparatus 100A is different from the film removal apparatus 100 in the relative positional relationship between the magnetic field introduction window WR and the stage S, but the other configurations are the same.

[0055] In the film removal apparatus 100A, the magnetic field introduction window WR and the stage S are arranged so that a perpendicular line VH that passes through the third center point P3 of the magnetic field introduction window WR and is perpendicular to the magnetic field introduction window WR is located in a perpendicular line arrangement region VR in a plan view in the z-axis direction. Here, the perpendicular line arrangement region VR is a region from the first tangent line H1 to the second tangent line H2 that is a tangent to the orbital circle 32 of the second center point P2 that is parallel to the first tangent line H1 and is located closer to the first tangent line H1 than the first center point P1. This allows the film removal apparatus 100A to achieve the same effects as the film removal apparatus 100.

[0056] 〔summary〕 A film removal apparatus (100, 100A) according to a first aspect of the present invention includes a vacuum vessel (10) for accommodating a workpiece (work W) inside (11), an antenna (4) provided outside the vacuum vessel and generating a high-frequency magnetic field, a magnetic field introduction window (WR) provided in a wall surface (10a) of the vacuum vessel for introducing the high-frequency magnetic field into the vacuum vessel in order to generate plasma inside the vacuum vessel, and a stage (S) installed inside the vacuum vessel and for placing a plurality of the workpieces, the stage including a first circular plate (20) that rotates around a first center point (P1) that is the center, and a magnetic field introduction window (WR) provided in a wall surface (10a) of the vacuum vessel for introducing the high-frequency magnetic field into the vacuum vessel. The apparatus has a plurality of second disks (30) provided along the outer periphery of the first disk and rotating around a second center point (P2) which is the center of each disk, and a plurality of holding members (40) provided on the second disk and each holding the workpiece, and in a planar view, a perpendicular line (VH) passing through the center (third center point P3) of the magnetic field introduction window (WR) and perpendicular to the magnetic field introduction window is located in a perpendicular line arrangement region (VR) from a first tangent (H1) tangent to the outer periphery of the first disk to a second tangent (H2) which is a tangent to the orbital circle (32) of the second center point that is parallel to the first tangent and is located on the first tangent side of the first center point.

[0057] According to the above configuration, since a high-frequency magnetic field is introduced into the vacuum vessel through the magnetic field introduction window, plasma can be generated in the vacuum vessel. In addition, in a plan view, a perpendicular line passing through the center of the magnetic field introduction window and perpendicular to the magnetic field introduction window is located in the perpendicular line arrangement area, so that many objects to be treated can be included in the plasma area. This allows many objects to be treated with plasma treatment even with one antenna. In addition, the rotation of the first disk creates a timing at which the object to be treated is located in an area where the plasma does not hit, and the object to be treated is prevented from being continuously exposed to the plasma, so that the temperature rise of the object to be treated can be suppressed. Furthermore, the rotation of the second disk makes the plasma density to which each object to be treated is exposed uniform. As a result, it is possible to realize a film removal device that prevents the object to be treated from becoming too hot, while suppressing the device cost and having high treatment efficiency.

[0058] In the film removal apparatus (100 / 100A) according to aspect 2 of the present invention, in the above-mentioned aspect 1, the magnetic field introduction window (WR) may be composed of a metal plate (6) having a plurality of slits (61) and a dielectric plate (7) covering the slits and installed on the atmospheric side of the metal plate.

[0059] According to the above configuration, since the magnetic field introduction window is composed of a metal plate and a dielectric plate, plasma can be generated in the vacuum vessel by the high frequency magnetic field generated by the antenna. Also, the strength of the magnetic field introduction window can be increased by the slits in the metal plate, so that damage to the dielectric plate can be prevented.

[0060] The film removal apparatus (100 / 100A) according to aspect 3 of the present invention may be configured such that, in aspect 2, the magnetic field introduction window (WR) is arranged so as to be approximately parallel to the antenna (4), and the slit (61) is formed in the metal plate (6) so that the longitudinal direction of the antenna and the longitudinal direction of the slit (61) are perpendicular to each other.

[0061] According to the above configuration, the longitudinal direction of the slit is perpendicular to the longitudinal direction of the antenna, so that a plasma region with high plasma density can be generated in the vacuum vessel in a direction perpendicular to the longitudinal direction of the antenna.

[0062] In the film removal apparatus (100 / 100A) according to a fourth aspect of the present invention, in any one of the first to third aspects, the rotation speeds of the first and second disks (20) and (30) may be determined in accordance with the temperature of the object to be treated (workpiece W). With this configuration, film removal from the object to be treated can be performed in an appropriate temperature range.

[0063] In the film removal apparatus (100, 100A) according to a fifth aspect of the present invention, in any one of the first to fourth aspects, the holding member (40) may rotate on its axis. This configuration enables a more uniform film removal process.

[0064] In the film removal apparatus (100 / 100A) according to aspect 6 of the present invention, in any one of aspects 1 to 5, the length (L1) of the antenna (4) in the height direction of the object to be treated (workpiece W) may be longer than the height (L2) of the object to be treated. With this configuration, the object to be treated can be covered with plasma even in the height direction of the object to be treated, so that the entire object to be treated can be subjected to film removal treatment.

[0065] The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of the present invention. [Explanation of symbols]

[0066] 4 Antennas 5. Magnetic field introduction window component 6, 6A metal plate 7 Dielectric plate 10 Vacuum container 20 First Disc 30 Second Disc 32 Orbital Circle 40 Retaining member 61 Slit 100, 100A film removal equipment H1 1st tangent H2 second tangent VR Perpendicular Line Placement Area P1 1st center point P2 2nd center point P3 3rd center point (center) L1: Length of the antenna in the height direction of the workpiece (object to be processed) L2 Height of workpiece (processing object) WR magnetic field introduction window

Claims

1. a vacuum vessel for accommodating an object to be treated therein; an antenna provided outside the vacuum vessel and configured to generate a high-frequency magnetic field; a magnetic field introduction window provided on a wall surface of the vacuum vessel for introducing the high frequency magnetic field into the vacuum vessel in order to generate plasma inside the vacuum vessel; a stage installed in the vacuum chamber and on which a plurality of the objects to be processed are placed; The stage comprises: A first disk that rotates around a first center point; a plurality of second disks provided on the first disk along an outer periphery of the first disk, the second disks rotating around a second center point that is the center of each second disk; a plurality of holding members provided on the second disk, each holding the workpiece; A film removal device in which, in a planar view, a perpendicular line passing through the center of the magnetic field introduction window and perpendicular to the magnetic field introduction window is located in a perpendicular line arrangement region from a first tangent line tangent to the outer periphery of the first circular plate to a second tangent line tangent to the orbital circle of the second center point that is parallel to the first tangent line and is located on the first tangent side of the first center point.

2. 2. The film removal apparatus according to claim 1, wherein the magnetic field introduction window is composed of a metal plate having a plurality of slits and a dielectric plate that covers the slits and is disposed on the atmospheric side of the metal plate.

3. The magnetic field introduction window is disposed so as to be substantially parallel to the antenna, The film removal apparatus according to claim 2 , wherein the slit is formed in the metal plate such that a longitudinal direction of the antenna and a longitudinal direction of the slit are perpendicular to each other.

4. The film removal apparatus according to claim 1 , wherein the rotation speeds of the first disk and the second disk are determined in accordance with a temperature of the object to be treated.

5. The film removal apparatus according to claim 1 , wherein the holding member rotates on its axis.

6. The film removal apparatus according to claim 1 , wherein a length of the antenna in a height direction of the object to be treated is longer than a height of the object to be treated.

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