Method for detecting wiring abnormalities and plasma processing apparatus

Abstract

To provide a method of properly detecting a wiring abnormality in a DC power supply system of a plasma processing apparatus.SOLUTION: A plasma processing apparatus includes: a chamber that performs plasma processing of a substrate therein; a stage that is provided inside the chamber and has an electrostatic chuck to suck and hold the substrate; a DC power source system that is configured to control plasma generated inside the chamber; and an ampere meter that measures a current flowing through the DC power source. The DC power source system has: a DC power source that applies a DC voltage to the DC power source system; a high frequency filter that deletes high frequency components from the DC power source; and a DC voltage application member which is an application target of the DC voltage. A detection method includes the steps of: applying the DC voltage from the DC power source; measuring the current flowing through a circuit that constitutes the DC power source system; and comparing a measurement value of the current with a predetermined threshold. When the measured value is the threshold or more, it is determined that a wiring abnormality has occurred in the circuit constituting the DC power source system.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] The present disclosure relates to a wiring abnormality detection method and a plasma processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a method for detecting a disconnection in an electrostatic chuck circuit, in which, when no substrate is placed on the electrostatic chuck, a voltage higher than that when the electrostatic chuck attracts and holds a substrate is applied to the electrostatic chuck from a direct current. According to the method described in Patent Document 1, a current flowing between a direct current power source and the electrostatic chuck due to the application of the voltage is measured, and a disconnection in the electrostatic chuck circuit is detected based on the magnitude of the current. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 10-308439 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure appropriately detects a wiring abnormality in a DC power supply system of a plasma processing apparatus. [Means for solving the problem]

[0005] One aspect of the present disclosure is a method for detecting a wiring abnormality in a plasma processing apparatus, the plasma processing apparatus including a chamber for performing plasma processing on a substrate therein, a stage provided inside the chamber and having an electrostatic chuck for attracting and holding the substrate, a DC power supply system for controlling plasma generated inside the chamber, and an ammeter for measuring a current flowing through the DC power supply system, the DC power supply system providing a DC voltage to the DC power supply system. By pulse waveA DC power source that applies a voltage, a high-frequency filter that removes high-frequency components from the DC power source, and a DC voltage application member to which the DC voltage is applied are electrically connected in this order to form a circuit, and the detection method includes detecting a voltage by the DC power source. The above A step of applying a DC voltage and configuring the DC power supply system The above measuring a current through a circuit; and comparing the measured current with a predetermined threshold; Based on the comparing step, whether or not a wiring abnormality occurs in the circuit constituting the DC power supply system. Make a judgment. Effect of the Invention

[0006] According to the present disclosure, a wiring abnormality in a DC power supply system of a plasma processing apparatus can be appropriately detected. [Brief description of the drawings]

[0007] [Figure 1] 1 is a vertical cross-sectional view showing an outline of a configuration of a plasma processing apparatus according to an embodiment of the present invention. [Diagram 2] FIG. 2 is an explanatory diagram showing a configuration example of a DC power supply system of the plasma processing apparatus according to the present embodiment. [Diagram 3] FIG. 11 is an explanatory diagram showing another configuration example of the DC power supply system of the plasma processing apparatus according to the present embodiment. [Figure 4] FIG. 1 is an explanatory diagram illustrating a schematic diagram of a state in which a wiring abnormality occurs in a DC power supply system. [Diagram 5] FIG. 2 is a flowchart showing main steps of a wiring abnormality detection method according to the present embodiment. [Figure 6] 1 is a graph showing an example of VI characteristics. [Figure 7] FIG. 11 is a flowchart showing main steps of a wiring anomaly detection method according to a second embodiment. [Figure 8] 1 is a graph showing an example of VI characteristics. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] In the manufacturing process of semiconductor devices, a process gas is supplied to a semiconductor wafer (hereinafter simply referred to as "wafer"), and the wafer is subjected to various plasma processes such as etching, film formation, diffusion, etc. In recent years, safety inspections for these plasma processes have become stricter due to the influence of higher power and higher voltage, and an interlock mechanism is required to prohibit access to live parts while they are live, or to stop power output when access is detected.

[0009] Conventionally, as the above-mentioned interlock mechanism, for example, an interlock key is provided on the connector of the transmission line of the plasma processing apparatus, or an interlock cover is provided on the connector so that the connector cannot be attached or detached unless the cover is removed. It has also been proposed to provide the interlock cover at a position where a switch linked to the power output operation of the plasma processing apparatus is pressed, so that the power output is automatically cut off when the cover is removed while the power is live.

[0010] However, in these conventional interlock mechanisms, it was possible to activate the interlock mechanism even when, for example, the wiring was disconnected or broken (hereinafter, these disconnected and broken wiring may be collectively referred to as "wiring abnormality"). In other words, even if a wiring abnormality occurred, the interlock mechanism may not be able to detect the abnormality and may be able to output power, which may pose a risk of abnormal discharge or electric shock to the worker. In particular, in a direct current (DC) power supply system (e.g., upper electrode circuit, edge ring circuit, etc.) for plasma control, the plasma potential is directly observed in each wiring in the plasma processing apparatus, so if a wiring abnormality occurs, there is a high risk of abnormal discharge during plasma generation.

[0011] In view of such circumstances, it is required to appropriately detect wiring abnormalities in a DC power supply system in a plasma processing apparatus. The above-mentioned Patent Document 1 discloses a method for detecting a disconnection in an electrostatic chuck circuit. However, although Patent Document 1 describes the detection of a disconnection in an electrostatic chuck circuit for holding a wafer, it does not describe the detection of a disconnection in a DC power supply system for performing the above-mentioned plasma control.

[0012] The technology disclosed herein appropriately detects wiring abnormalities in a direct current power supply system of a plasma processing apparatus, particularly in an upper electrode circuit or an edge ring circuit. Hereinafter, a plasma processing apparatus as a substrate processing system and a wafer processing method as a substrate processing method according to the present embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are denoted by the same reference numerals, and duplicated descriptions will be omitted.

[0013] <Plasma processing equipment> First, a plasma processing apparatus according to this embodiment will be described. Fig. 1 is a vertical cross-sectional view showing an outline of the configuration of a plasma processing apparatus 1. Fig. 2 is an explanatory diagram showing an example of a power supply system of the plasma processing apparatus 1. In the plasma processing apparatus 1, plasma processing such as etching processing, film formation processing, and diffusion processing is performed on a wafer W as a substrate.

[0014] 1, the plasma processing apparatus 1 has a substantially cylindrical chamber 10. The chamber 10 defines a processing space S in which plasma is generated. The chamber 10 is made of, for example, aluminum. The chamber 10 is connected to a ground potential.

[0015] A stage 11 on which a wafer W is placed is accommodated inside the chamber 10. The stage 11 has a lower electrode 12, an electrostatic chuck 13, and an edge ring 14. Note that an electrode plate (not shown) made of, for example, aluminum may be provided on the lower surface side of the lower electrode 12.

[0016] The lower electrode 12 is made of a conductive metal, such as aluminum, and has a substantially circular plate shape.

[0017] A coolant flow passage 15a is formed inside the lower electrode 12. A coolant is supplied to the coolant flow passage 15a from a chiller unit (not shown) provided outside the chamber 10 via a coolant inlet pipe 15b. The coolant supplied to the coolant flow passage 15a returns to the chiller unit via a coolant outlet flow passage 15c. By circulating a coolant, such as cooling water, through the coolant flow passage 15a, the electrostatic chuck 13, the edge ring 14, and the wafer W can be cooled to a desired temperature.

[0018] The electrostatic chuck 13 is provided on the lower electrode 12. The electrostatic chuck 13 is a member configured to be able to attract and hold both the wafer W and the edge ring 14 by electrostatic force. The electrostatic chuck 13 has a central upper surface that is higher than the peripheral upper surface. The central upper surface of the electrostatic chuck 13 serves as a wafer mounting surface on which the wafer W is mounted, and the peripheral upper surface of the electrostatic chuck 13 serves as an edge ring mounting surface on which the edge ring 14 is mounted.

[0019] A first electrode 16a for attracting and holding the wafer W is provided at the center inside the electrostatic chuck 13. A second electrode 16b for attracting and holding the edge ring 14 is provided at the periphery inside the electrostatic chuck 13. The electrostatic chuck 13 has a configuration in which the electrodes 16a and 16b are sandwiched between insulating materials made of an insulating material.

[0020] A DC voltage is applied to the first electrode 16a from a DC power supply (not shown). The wafer W is attracted and held on the upper surface of the central portion of the electrostatic chuck 13 by the electrostatic force generated thereby. Similarly, a DC voltage is applied to the second electrode 16b from a DC power supply (not shown). The edge ring 14 is attracted and held on the upper surface of the peripheral portion of the electrostatic chuck 13 by the electrostatic force generated thereby.

[0021] In this embodiment, the central portion of the electrostatic chuck 13 where the first electrode 16a is provided and the peripheral portion where the second electrode 16b is provided are integrated, but these central portion and peripheral portion may be separate.

[0022] The edge ring 14 as a DC voltage application member is an annular member arranged to surround the wafer W placed on the upper surface of the central portion of the electrostatic chuck 13, and a DC voltage is applied to the edge ring 14 from a DC power supply 60 described below. The edge ring 14 is provided to improve the uniformity of the plasma processing. For this reason, the edge ring 14 is made of a material appropriately selected depending on the plasma processing, and may be made of, for example, Si or SiC.

[0023] The stage 11 configured as above is fastened to a substantially cylindrical support member 17 provided at the bottom of the chamber 10. The support member 17 is made of an insulating material such as ceramic or quartz.

[0024] Although not shown, the stage 11 may include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 13, the edge ring 14, and the wafer W to a desired temperature. The temperature adjustment module may include a heater, a flow path, or a combination of these. A temperature adjustment fluid such as a coolant or a heat transfer gas flows through the flow path.

[0025] A shower head 20 is provided above the stage 11 so as to face the stage 11. The shower head 20 has an electrode plate 21 arranged facing the processing space S, and an electrode support 22 provided above the electrode plate 21. The electrode plate 21 functions as a pair of upper electrodes together with the lower electrode 12. When the first high frequency power supply 50 is electrically connected to the lower electrode 12 as described below, the shower head 20 is connected to the ground potential. The shower head 20 is supported on the upper part (ceiling surface) of the chamber 10 via an insulating shielding member 23.

[0026] The electrode plate 21 is formed with a plurality of gas outlets 21a for supplying the processing gas sent from the gas diffusion chamber 22a described later to the processing space S. The electrode plate 21 is made of, for example, a conductor or semiconductor having a low electrical resistivity that generates little Joule heat. A DC voltage is applied to the electrode plate 21 from a second DC power source 70 described later.

[0027] The electrode support 22 supports the electrode plate 21 in a detachable manner. The electrode support 22 has a configuration in which a plasma-resistant film is formed on the surface of a conductive material such as aluminum. This film may be a film formed by anodizing, or a ceramic film such as a film formed from yttrium oxide. A gas diffusion chamber 22a is formed inside the electrode support 22. A plurality of gas circulation holes 22b communicating with the gas outlet 21a are formed from the gas diffusion chamber 22a. In addition, a gas introduction hole 22c connected to a gas supply pipe 33 described later is formed in the gas diffusion chamber 22a.

[0028] Further, a gas supply source group 30 that supplies process gas to the gas diffusion chamber 22a is connected to the electrode support 22 via a flow rate control device group 31, a valve group 32, a gas supply pipe 33, and a gas introduction hole 22c.

[0029] The gas supply source group 30 has a plurality of types of gas supply sources required for plasma processing. The flow control device group 31 includes a plurality of flow controllers, and the valve group 32 includes a plurality of valves. Each of the plurality of flow controllers of the flow control device group 31 is a mass flow controller or a pressure control type flow controller. In the plasma processing apparatus 1, a processing gas from one or more gas supply sources selected from the gas supply source group 30 is supplied to the gas diffusion chamber 22a via the flow control device group 31, the valve group 32, the gas supply pipe 33, and the gas introduction hole 22c. Then, the processing gas supplied to the gas diffusion chamber 22a is dispersed in a shower-like manner and supplied into the processing space S via the gas circulation hole 22b and the gas outlet 21a.

[0030] A baffle plate 40 is provided at the bottom of the chamber 10, between the inner wall of the chamber 10 and the support member 17. The baffle plate 40 is made, for example, of an aluminum material coated with ceramics such as yttrium oxide. A plurality of through holes are formed in the baffle plate 40. The processing space S is in communication with an exhaust port 41 via the baffle plate 40. An exhaust device 42, such as a vacuum pump, is connected to the exhaust port 41, and the inside of the processing space S can be depressurized by the exhaust device 42.

[0031] Further, a loading / unloading port 43 for the wafer W is formed in a side wall of the chamber 10, and the loading / unloading port 43 can be opened and closed by a gate valve 44.

[0032] 1 and 2, the plasma processing apparatus 1 further includes a first high frequency power supply 50, a second high frequency power supply 51, and a matching box 52. The first high frequency power supply 50 and the second high frequency power supply 51 are connected to the lower electrode 12 via the matching box 52.

[0033] The first high frequency power supply 50 is a power supply that generates high frequency power for generating plasma. The first high frequency power supply 50 may have a frequency of 27 MHz to 100 MHz, and in one example, high frequency power HF of 40 MHz is supplied to the lower electrode 12. The first high frequency power supply 50 is connected to the lower electrode 12 via a first matching circuit 53 of a matching device 52. The first matching circuit 53 is a circuit for matching the output impedance of the first high frequency power supply 50 with the input impedance on the load side (lower electrode 12 side). Note that the first high frequency power supply 50 does not have to be electrically connected to the lower electrode 12, and may be connected to the shower head 20, which is the upper electrode, via the first matching circuit 53.

[0034] The second high frequency power supply 51 generates high frequency power (high frequency bias power) LF for attracting ions into the wafer W, and supplies the high frequency power LF to the lower electrode 12. The frequency of the high frequency power LF may be within a range of 400 kHz to 13.56 MHz, and is 400 kHz in one example. The second high frequency power supply 51 is connected to the lower electrode 12 via a second matching circuit 54 of the matching device 52. The second matching circuit 54 is a circuit for matching the output impedance of the second high frequency power supply 51 with the input impedance on the load side (lower electrode 12 side). Note that a DC (Direct Current) pulse generating unit may be used instead of the second high frequency power supply 51.

[0035] The plasma processing apparatus 1 further includes a DC power supply 60, a switching unit 61, and an RF filter 62. The DC power supply 60 is electrically connected to the edge ring 14 via the switching unit 61 and the RF filter 62. In the following description, the DC power supply 60, the switching unit 61, the RF filter 62, and the edge ring 14 may be collectively referred to as an "edge ring circuit" as a DC power supply system targeted for wiring abnormality detection according to this embodiment. In addition, the upstream side of the current flow direction in the edge ring circuit, i.e., the DC power supply 60 side, may be simply referred to as the "upstream side", and the downstream side of the current flow direction, i.e., the edge ring 14 side, may be simply referred to as the "downstream side".

[0036] The DC power supply 60 is a power supply that applies a negative DC voltage for plasma control to the edge ring 14. The DC power supply 60 is a variable DC power supply that is capable of adjusting the high and low of the DC voltage. The DC power supply 60 is also configured to be able to switch the voltage waveform applied to the edge ring 14 between a pulse wave and a continuous wave (CW).

[0037] The switching unit 61 is configured to be able to stop application of a DC voltage from the DC power supply 60 to the edge ring 14. The circuit configuration of the switching unit 61 can be designed as desired by those skilled in the art.

[0038] The RF filter 62 is provided to protect the DC power supply 60, and has an HF filter 63 and an LF filter 64 for reducing or blocking high frequencies. The HF filter 63 reduces or blocks, for example, a 40 MHz high frequency wave from the first high frequency power supply 50. The LF filter 64 reduces or blocks, for example, a 400 kHz high frequency wave from the second high frequency power supply 51.

[0039] In one example, the LF filter 64 is configured to have a variable impedance. That is, the impedance is made variable by making some elements of the LF filter 64 variable elements. The variable elements may be, for example, either coils or capacitors. In addition, the same function can be achieved with any variable impedance element, such as a diode or other element, not limited to coils and capacitors. Furthermore, the elements themselves do not need to be variable, and the impedance may be made variable by switching a combination of elements with fixed values ​​using a switching circuit. The circuit configurations of this LF filter 64 and the above-mentioned HF filter 63 can each be designed arbitrarily by those skilled in the art.

[0040] The plasma processing apparatus 1 further includes a measuring device (not shown) that measures the self-bias voltage of the edge ring 14 (or the self-bias voltage of the lower electrode 12 or the wafer W). The configuration of the measuring device can be designed as desired by a person skilled in the art.

[0041] The edge ring circuit thus configured is provided with an ammeter A for measuring the current flowing through the edge ring circuit. The location where the ammeter A is installed is not particularly limited, and may be provided, for example, inside the DC power supply 60 as shown in Figures 1 and 2, or may be provided outside the DC power supply 60 immediately downstream of the DC power supply 60.

[0042] The plasma processing apparatus 1 further includes a second DC power supply 70, a second switching unit 71, and a second RF filter 72. The second DC power supply 70 is electrically connected to the electrode plate 21 via the second switching unit 71 and the second RF filter 72. In the following description, the second DC power supply 70, the second switching unit 71, the second RF filter 72, and the electrode plate 21 may be collectively referred to as an "upper electrode circuit" as a DC power supply system for which wiring abnormality is detected according to this embodiment.

[0043] The second DC power supply 70 is a power supply that applies a negative DC voltage for plasma control to the electrode plate 21. The second DC power supply 70 is a variable DC power supply that is capable of adjusting the high and low of the DC voltage. The second DC power supply 70 is also configured to be able to switch the voltage waveform applied to the electrode plate 21 between a pulse wave and a continuous wave.

[0044] The second switching unit 71 is configured to be able to stop the application of a DC voltage from the second DC power supply 70 to the electrode plate 21. The circuit configuration of the second switching unit 71 can be designed as desired by those skilled in the art.

[0045] The second RF filter 72 is provided to protect the second DC power supply 70, and has an HF filter 73 and an LF filter 74 for reducing or blocking high frequencies. The HF filter 73 reduces or blocks, for example, a 40 MHz high frequency from the first high frequency power supply 50. The LF filter 74 reduces or blocks, for example, a 400 kHz high frequency from the second high frequency power supply 51. The circuit configurations of the HF filter 73 and the LF filter 74 can each be designed arbitrarily by a person skilled in the art.

[0046] The upper electrode circuit thus configured is provided with an ammeter A for measuring the current flowing through the upper electrode circuit. The location of the ammeter A is not particularly limited, and may be provided, for example, inside the second DC power supply 70 as shown in Figures 1 and 2, or may be provided outside the second DC power supply 70 immediately downstream of the second DC power supply 70.

[0047] The above-described plasma processing apparatus 1 is provided with a control unit 100. The control unit 100 is, for example, a computer equipped with a CPU, a memory, and the like, and has a program storage unit (not shown). The program storage unit stores a program for controlling the plasma processing in the plasma processing apparatus 1. The program may be recorded in a computer-readable storage medium and installed in the control unit 100 from the storage medium.

[0048] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. In addition, elements in different embodiments can be combined to form other embodiments.

[0049] For example, in the above embodiment, the edge ring circuit is directly connected to the edge ring 14, but as shown in Fig. 3, the edge ring circuit may be connected to the edge ring 14 via the lower electrode 12. In such a case, the DC power supply for plasma control is applied to the edge ring 14 via the lower electrode 12.

[0050] <How to detect wiring abnormalities> Next, a method for detecting wiring abnormalities in the upper electrode circuit and the edge ring circuit in the plasma processing apparatus 1 configured as above will be described. Note that the methods for detecting wiring abnormalities in the upper electrode circuit and the edge ring circuit are similar, so the following description will be given taking the method for detecting wiring abnormalities in the edge ring circuit as an example.

[0051] 4 is an explanatory diagram showing a schematic example of wiring abnormality patterns of an edge ring circuit, showing (a) a normal connection state and (b) to (d) states where a wiring abnormality has occurred. In the wiring abnormality detection according to this embodiment, a wiring abnormality of the edge ring circuit is detected based on a change in a circuit constant according to the connection state of each element constituting the edge ring circuit, as described later, more specifically, a change in electrostatic capacitance according to the connection state. In the edge ring circuit shown in FIG. 4, the influence on the circuit constant when a wiring abnormality occurs is negligibly small, so the switching unit 61 is not shown.

[0052] As shown in Fig. 4(a), the edge ring circuit is usually configured such that a DC power supply 60, an LF filter 64, an HF filter 63, and an edge ring 14 (chamber 10) are electrically connected to one another via wiring (e.g., a coaxial cable). In the edge ring circuit configured in this way, in response to a change in the circuit constant when a wiring abnormality occurs, (b) a wiring abnormality in the wiring connecting the LF filter 64 and the HF filter 63, (c) a wiring abnormality on the upstream side of the LF filter 64, and (d) a wiring abnormality immediately downstream of the DC power supply 60 are detected by distinguishing them from the normal connection state shown in Fig. 4(a).

[0053] In addition, when a wiring abnormality occurs in the wiring connecting the HF filter 63 and the edge ring 14 (chamber 10), the amount of change in the circuit constant from the normal connection state shown in Figure 4(a) is almost the same as when there is a wiring abnormality shown in Figure 4(b), so detection is performed under the same conditions as for the wiring abnormality shown in Figure 4(b).

[0054] Fig. 5 is a flow diagram showing main steps of detecting a wiring abnormality in an edge ring circuit according to this embodiment. Note that (a) to (d) shown in the flow diagram of Fig. 5 correspond to (a) a normal connection state and (b) to (d) states where a wiring abnormality has occurred, respectively, shown in Fig. 4.

[0055] 5, in detecting a wiring abnormality in an edge ring circuit, first, a DC voltage for detecting a short circuit (hereinafter, sometimes referred to as "short circuit detection voltage V1") is applied from a DC power supply 60 to the edge ring 14 before a wafer W is loaded into the plasma processing apparatus 1 (step S1 in FIG. 5). The short circuit detection voltage V1 may be a voltage (e.g., 120 V) lower than the voltage applied to the edge ring 14 during plasma processing of the wafer W, and may be applied under pulse conditions of a frequency of 20 kHz and a duty ratio of 60%. The waveform of the short circuit detection voltage V1 is not limited to a pulse wave, and may be applied as a continuous wave.

[0056] Next, the current flowing through the edge ring circuit due to the application of the short-circuit detection voltage V1 in step S1 is measured by an ammeter A, and the measured current value (hereinafter sometimes referred to as the "current value I1") is compared with a predetermined threshold value B1 to detect whether the edge ring circuit is short-circuited or not. Note that the threshold value B1 used for such short-circuit detection can be determined in advance, for example, by measuring the current value that flows when the short-circuit detection voltage V1 is applied to the edge ring circuit prior to wiring abnormality detection.

[0057] Specifically, for example, if the current value I1 is not measured, that is, if the measured current value I1 is 0 A, it is determined that the wiring is not connected to the DC power supply 60 as shown in Fig. 4(d), or that a break has occurred immediately downstream of the DC power supply 60 (step S2-1 in Fig. 5). In such a case, for example, after issuing an alarm to the effect that there is a wiring abnormality (d) in the edge ring circuit, the application of the short circuit detection voltage V1 from the DC power supply 60 is stopped.

[0058] Furthermore, for example, if the measured current value I1 is equal to or greater than the threshold value B1, it is determined that the edge ring circuit is short-circuited and an excessive current is flowing (step S2-2 in FIG. 5). In such a case, for example, an alarm is issued to the effect that the edge ring circuit is short-circuited, and then the application of the short-circuit detection voltage V1 from the DC power supply 60 is stopped.

[0059] If the measured current value I1 is less than the threshold value B1, it is determined that the edge ring circuit is not short-circuited and that at least the wiring is connected to the DC power supply 60, and a notification that the short circuit detection has been passed is issued (step S2-3 in FIG. 5).

[0060] Next, after stopping the application of the short circuit detection voltage V1 from the DC power supply 60, a DC pulse voltage for disconnection detection (hereinafter, sometimes referred to as "disconnection detection voltage V2") is applied from the DC power supply 60 to the edge ring 14 (step S3 in FIG. 5). As the disconnection detection voltage V2, an arbitrary voltage described later is applied under pulse conditions, for example, a frequency of 20 kHz and a duty ratio of 60%.

[0061] Next, the current flowing through the edge ring circuit due to application of the disconnection detection voltage V2 in step S3 is measured by an ammeter A, and the measured current value (hereinafter sometimes referred to as "current value I2") is compared with a predetermined threshold value B2 to detect whether or not a disconnection has occurred in the edge ring circuit. At this time, the comparison of the current value I2 with the threshold value B2 is performed within a predetermined time t (for example, 3 seconds in the example of FIG. 5) to detect whether or not there is a start-up failure in the edge ring circuit.

[0062] Specifically, for example, when the current value I2 reaches the threshold value B2, i.e., the current flows to the edge ring 14 (chamber 10), but it takes 3 seconds or more to reach the threshold value B2, it is determined that a start-up failure has occurred in the edge ring circuit (step S4-1 in FIG. 5). That is, it is determined that although wiring is connected to the edge ring 14, the current is not flowing properly due to, for example, a connection failure. In such a case, for example, an alarm is issued to the effect that a start-up failure has occurred in the edge ring circuit, and then the application of the disconnection detection voltage V2 from the DC power supply 60 is stopped.

[0063] Furthermore, for example, if the measured current value I2 is less than the threshold value B2, it is determined that a wiring abnormality (disconnection or no connection to each element) has occurred in the edge ring circuit (step S4-2 in FIG. 5). In such a case, for example, an alarm is issued to inform the user that a wiring abnormality has occurred in the edge ring circuit, and more preferably, to indicate where in the edge ring circuit the wiring abnormality has occurred, and then the application of the disconnection detection voltage V2 from the DC power supply 60 is stopped.

[0064] The detection of wiring abnormality in the edge ring circuit in step S4-2 will be described in more detail. Fig. 6 is a graph showing an example of a VI characteristic showing the relationship between the disconnection detection voltage V2 and the current value I2. Note that (a) to (d) in the legend of Fig. 6 correspond to (a) a normal connection state and (b) to (d) states where a wiring abnormality has occurred, respectively, shown in Fig. 4.

[0065] As shown in Fig. 6(a), when no wiring abnormality occurs in the edge ring circuit, application of the disconnection detection voltage V2 causes a current to flow properly throughout the entire edge ring circuit, i.e., from the DC power supply 60 to the edge ring 14 (chamber 10). At this time, the current value I2 measured by ammeter A is determined according to the disconnection detection voltage V2, as shown in the VI characteristic in Fig. 6(a).

[0066] On the other hand, as shown in FIG. 6(b) to (d), when a wiring abnormality occurs in the edge ring circuit, when the disconnection detection voltage V2 is applied, a current flows from the DC power supply 60 to the wiring abnormality. In other words, since no current flows downstream of the wiring abnormality in the edge ring circuit, the circuit constant changes (the capacitance of the element located downstream of the wiring abnormality decreases), and the current value I2 measured decreases compared to the normal connection state (a). Therefore, as shown in FIG. 6, based on the VI characteristic acquired in advance, the threshold value B2 is set in advance between the current value I(a) as the first VI characteristic measured in a normal state and the current value I(b) as the second VI characteristic measured in a wiring abnormality. Thereby, by comparing the current value I2 actually measured by the ammeter A with the threshold value B2, it is possible to detect whether or not a wiring abnormality occurs in the edge ring circuit.

[0067] As described above, if a wiring abnormality occurs in the edge ring circuit, no current flows downstream of the wiring abnormality, and the measured current value I2 decreases according to the capacitance of the element located downstream of the wiring abnormality. Therefore, based on the current value I2 measured by ammeter A, it is possible to detect whether the wiring abnormality has occurred in (b) the wiring connecting the LF filter 64 and the HF filter 63, (c) the wiring upstream of the LF filter 64, or (d) the wiring immediately downstream of the DC power supply 60.

[0068] As shown in FIG. 6, the voltage value of the disconnection detection voltage V2 applied to the edge ring circuit can be arbitrarily determined. In this case, by increasing the applied disconnection detection voltage V2, the settable range of the threshold B2, i.e., the difference between the current value I(a) and the current value I(b), can be increased, and the wiring abnormality can be detected by more appropriately distinguishing between (a) a normal connection state and (b) to (d) wiring abnormalities. On the other hand, by decreasing the applied disconnection detection voltage V2, the effect on the electrostatic chuck 13 caused by the application of the disconnection detection voltage V2 and the generation of residual charges as shown in Patent Document 1 can be reduced. In view of these circumstances, the voltage value of the disconnection detection voltage V2 in this embodiment is preferably a voltage value (e.g., 300V to 500V) that is lower than the voltage applied to the edge ring 14 in a normal plasma processing process and allows the threshold B2 to be appropriately set.

[0069] Returning to the explanation of Fig. 5, if the measured current value I2 is equal to or greater than the threshold value B2 and the time taken to reach the threshold value B2 is within 3 seconds, it is determined that no wiring abnormality has occurred in the edge ring circuit, and a notice of successful disconnection detection is issued (step S4-3 in Fig. 5). Then, when it is determined that no wiring abnormality has occurred in the edge ring circuit, the application of the disconnection detection voltage V2 from the DC power supply 60 is stopped, and the series of wiring abnormality detection processes is completed.

[0070] According to the wiring abnormality detection of this embodiment, a disconnection detection voltage V2 is applied to an edge ring circuit, the current flowing therethrough is measured by an ammeter A, and the measured current value I2 is compared with a predetermined threshold value B2, thereby making it possible to detect a wiring abnormality in the edge ring circuit, such as disconnection or disconnection of the wiring.

[0071] In addition, at this time, by observing the amount of decrease in the measured current value I2 from the current value I(a) measured when the wiring is connected normally, it is possible to predict the capacitance of the part through which current flows due to the application of the disconnection detection voltage V2, i.e., to identify the location of the wiring abnormality.

[0072] Moreover, according to this embodiment, various wiring abnormalities in the edge ring circuit can be detected simply by applying the short circuit detection voltage V1 and the disconnection detection voltage V2 from the DC power supply 60 connected to the edge ring circuit. In other words, various wiring abnormalities can be detected using the existing interlock mechanism without providing a new interlock mechanism or the like to the plasma processing apparatus 1, and therefore the present invention is easily applicable to existing plasma processing apparatuses 1.

[0073] According to this embodiment, the disconnection detection voltage V2 is lower than the voltage applied to the edge ring 14 in a normal plasma processing process, and is applied at a voltage value (e.g., 300V to 500V) at which the threshold value B2 can be appropriately set, for example, under pulse conditions of a frequency of 20kHz and a duty ratio of 60%. Note that the pulse conditions of the disconnection detection voltage V2 are not limited to these, and it is preferable that the frequency is determined, for example, between 0.1kHz to 100kHz, preferably between 1kHz to 50kHz, and the duty ratio is determined, for example, between 10% to 90%.

[0074] Here, when wiring abnormality detection is performed by applying the disconnection detection voltage V2 to the edge ring circuit as a continuous wave instead of a pulse wave, no current flows in the circuit at a low voltage (e.g., 300 V to 500 V) as shown in the above example, and the current value I2 cannot be measured. That is, as shown in Patent Document 1, in order to measure the current value I2 in the edge ring circuit using a continuous wave, it is necessary to apply a higher voltage than during normal operation. In such a case, there is a concern that abnormal discharge may occur on the current application path or between the electrostatic chuck 13 and the edge ring 14.

[0075] In this embodiment, the disconnection detection voltage V2 is applied to the edge ring circuit by a pulse wave that includes high-frequency components, unlike a continuous wave. This makes it possible to pass a sufficient amount of detectable current through the circuit even at a low voltage (e.g., 300V to 500V) as shown in the above example, that is, to detect wiring abnormalities. As a result, compared to the case where a continuous wave is used, it is possible to appropriately set the threshold value for detecting the current value I2, appropriately detect wiring abnormalities, and suppress the occurrence of abnormal discharge.

[0076] Furthermore, according to this embodiment, prior to application of the above-mentioned disconnection detection voltage V2, a short circuit detection voltage V1 that is lower than the disconnection detection voltage V2 is applied to detect a short circuit in the edge ring circuit. If the disconnection detection voltage V2 is applied in a state in which the edge ring circuit is short-circuited, the application of the disconnection detection voltage V2 may cause an abnormal discharge in the edge ring circuit. In this regard, in this embodiment, short circuit detection is performed in advance at such a low voltage, thereby reducing the risk of abnormal discharge occurring due to the application of the disconnection detection voltage V2.

[0077] In the wiring abnormality detection according to this embodiment, the short circuit detection voltage V1 is applied prior to the application of the disconnection detection voltage V2 to detect a short circuit. However, when the disconnection detection voltage V2 is applied at a voltage that poses a low risk of abnormal discharge, or when short circuit detection of the edge ring circuit has already been completed, the short circuit detection process (steps S1 and S2 in FIG. 5) may be omitted as appropriate.

[0078] As described above, in the wiring abnormality detection according to the present embodiment, a wiring abnormality of the edge ring circuit is detected based on a change in the circuit constant according to the connection state of each element constituting the edge ring circuit, more specifically, a change in the capacitance according to the connection state. For this reason, when the difference between the current value I(a) measured in the normal connection state shown in FIG. 6 and the current value I(b) measured when the wiring abnormality occurs (b) becomes small due to a change in the device characteristics, for example, the threshold value B2 cannot be set appropriately, and the wiring abnormality may not be detected appropriately. More specifically, when the difference in capacitance between the chamber 10 and the edge ring circuit becomes small, for example, when the capacitance of the chamber 10 is small or the capacitance of the RF filter 62 is large, the threshold value B2 cannot be set appropriately, and it may not be possible to distinguish between the normal connection state (a) and the occurrence of the wiring abnormality (b).

[0079] <Wiring Abnormality Detection According to the Second Embodiment> Next, a description will be given of wiring abnormality detection according to the second embodiment in the case where the difference in capacitance between the chamber 10 and the edge ring circuit is small. FIG. 7 is a flow diagram showing main steps of wiring abnormality detection in an edge ring circuit according to the second embodiment. (a) to (d) shown in the flow diagram of FIG. 7 correspond to (a) a normal connection state and (b) to (d) a state in which a wiring abnormality has occurred, respectively, shown in FIG. 4. In the following description, repeated description of steps similar to those of wiring abnormality detection according to the first embodiment shown in FIG. 5 may be omitted.

[0080] 7, in the wiring abnormality detection of the edge ring circuit according to the second embodiment, first, a short circuit detection voltage V1 is applied to the edge ring 14 from the DC power supply 60 without a wafer W being loaded into the plasma processing apparatus 1 (step P1 in FIG. 7). The conditions for applying the short circuit detection voltage V1 to the edge ring circuit are the same as those for the wiring abnormality detection according to the first embodiment.

[0081] Next, the current flowing through the edge ring circuit due to the application of the short circuit detection voltage V1 in step P1 is measured by an ammeter A, and the measured current value I1 is compared with a predetermined threshold value B1 to detect whether the edge ring circuit is short circuited or not (step P2 in Figure 7).

[0082] The method for detecting a short circuit in an edge ring circuit according to this embodiment is the same as the method for detecting a short circuit in an edge ring circuit according to the first embodiment. That is, for example, if the current value I1 is not measured, it is determined that the wiring is not connected to the DC power supply 60, or that a break has occurred immediately downstream of the DC power supply 60 (step P2-1 in FIG. 7). Also, for example, if the measured current value I1 is equal to or greater than the threshold value B1, it is determined that the edge ring circuit is short-circuited and an excessive current is flowing (step P2-2 in FIG. 7).

[0083] If the measured current value I1 is less than the threshold value B1, it is determined that the edge ring circuit is not short-circuited and that at least the wiring is connected to the DC power supply 60, and a notification that the short circuit detection has been passed is issued (step P2-3 in FIG. 7).

[0084] Subsequently, after stopping the application of the short circuit detection voltage V1 from the DC power supply 60, plasma is generated inside the chamber 10 (step P3 in FIG. 7). Specifically, first, a processing gas is supplied from the gas supply source group 30 to the processing space S via the shower head 20. In addition, a high frequency power HF for plasma generation is supplied to the lower electrode 12 by the first high frequency power supply 50, and the processing gas is excited to generate plasma.

[0085] The generation of plasma in step P3 is performed under conditions that reduce the risk of abnormal discharge or the like occurring due to the generation of plasma, even if a wiring abnormality occurs in the edge ring circuit. 2It is desirable that the gas flow rate is 800 sccm, the internal pressure of the chamber 10 is 100 mTorr or more and 1000 mTorr or less, the applied power of the high frequency power HF is 500 W or less in continuous wave, and Vdc is less than 100 V. In addition, it is desirable that the time for generating the plasma is, for example, 5 seconds or less.

[0086] The lower limit of the internal pressure of the chamber 10 during plasma generation can be further reduced under conditions where a wafer W is loaded into the chamber 10. That is, under conditions where a wafer W is not loaded, the internal pressure of the chamber 10 is desirably 100 mTorr or more as described above, but for example, when wiring anomaly detection is performed with a wafer W loaded into the chamber 10, the internal pressure of the chamber 10 can be controlled to 5 mTorr or more.

[0087] Once plasma is generated inside the chamber 10, a disconnection detection voltage V3 is then applied from the DC power supply 60 to the edge ring 14 (step P4 in FIG. 7). As the disconnection detection voltage V3, any voltage described below is applied in any application manner (applied waveform: pulse wave or continuous wave). When the disconnection detection voltage V3 is applied as a pulse wave, the pulse conditions can be, for example, a frequency of 20 kHz and a duty ratio of 60%.

[0088] Next, the current flowing through the edge ring circuit due to application of the disconnection detection voltage V3 in step P4 is measured by an ammeter A, and the measured current value (hereinafter sometimes referred to as "current value I3") is compared with a predetermined threshold value B3 to detect whether or not a disconnection has occurred in the edge ring circuit. At this time, the comparison of the current value I3 with the threshold value B3 is performed within a predetermined time t (for example, 3 seconds in the example of FIG. 7) to detect whether or not there is a start-up failure in the edge ring circuit.

[0089] The method for detecting a short circuit in an edge ring circuit according to this embodiment is similar to the method for detecting a short circuit in an edge ring circuit according to the first embodiment. That is, for example, if the current value I3 reaches the threshold value B3 but it takes 3 seconds or more to reach the threshold value B3, it is determined that a startup failure has occurred in the edge ring circuit (step S5-1 in FIG. 7). Also, for example, if the measured current value I3 is less than the threshold value B3, it is determined that a wiring abnormality has occurred in the edge ring circuit (step P5-2 in FIG. 7).

[0090] The detection of wiring abnormality in the edge ring circuit in step P5-2 will be described in more detail. Fig. 8 is a graph showing an example of a VI characteristic showing the relationship between the disconnection detection voltage V3 and the current value I3. Note that (a) and (b) shown in the legend of Fig. 8 correspond to (a) a normal connection state and (b) a state where a wiring abnormality has occurred, respectively, shown in Fig. 4.

[0091] As shown in FIG. 8(a), when no wiring abnormality occurs in the edge ring circuit, the application of the disconnection detection voltage V3 causes a current to flow properly throughout the entire edge ring circuit, that is, from the DC power supply 60 to the edge ring 14. Here, the edge ring 14 is disposed adjacent to the processing space S defined inside the chamber 10. For this reason, in the plasma processing apparatus 1 according to the present embodiment, the DC power supply 60 and the plasma generated inside the chamber 10 are connected in an equivalent circuit via the edge ring 14, so that the current flowing through the edge ring circuit also flows through the plasma. In other words, if the edge ring circuit is normally connected and a current flows to the edge ring 14, the plasma generated inside the chamber 10 can be treated as a pseudo load having a low resistance, and the current value I3 measured by the ammeter A can be increased.

[0092] On the other hand, as shown in Fig. 8(b), if a wiring abnormality occurs in the edge ring circuit, even if the disconnection detection voltage V3 is applied, no current flows to the edge ring 14, i.e., to the plasma formed inside the chamber 10, and the current value I3 measured by the ammeter A decreases. Therefore, as shown in Fig. 8, based on the VI characteristics acquired in advance, a threshold value B3 is set in advance between the current value I(a) measured in a normal state and the current value I(b) measured when there is a wiring abnormality. In this way, by comparing the current value I3 actually measured by the ammeter A with the threshold value B3, it is possible to detect whether or not there is a wiring abnormality in the edge ring circuit.

[0093] Returning to the explanation of FIG. 7, if the measured current value I3 is equal to or greater than the threshold value B3 and the time taken to reach the threshold value B3 is within 3 seconds, it is determined that no wiring abnormality occurs in the edge ring circuit, and a notice of failure in the disconnection detection is sent (step P5-3 in FIG. 7). If it is determined that no wiring abnormality occurs in the edge ring circuit, the supply of processing gas to the processing space S and the supply of high frequency power HF to the lower electrode 12 are stopped, and the generation of plasma inside the chamber 10 is stopped (step P6 in FIG. 7). Thereafter, the application of the disconnection detection voltage V3 from the DC power supply 60 is stopped, completing a series of wiring abnormality detection steps.

[0094] According to the wiring abnormality detection of the second embodiment, if the DC power supply 60 and the plasma generated inside the chamber 10 are connected in an equivalent circuit and a current flows capacitively or directly to the plasma, then by generating plasma inside the chamber 10, a current can be passed through the plasma by regarding the plasma as a low-resistance load. That is, even if the difference in capacitance between the chamber 10 and the edge ring circuit is small as described above, the difference between (a) the current value I(a) measured in a normal connection state and (b) the current value I(b) measured when a wiring abnormality occurs can be made large, so that a wiring abnormality in the edge ring circuit can be appropriately detected.

[0095] At this time, by appropriately controlling the plasma generation conditions for the inside of the chamber 10, it is possible to reduce the risk of abnormal discharge or the like due to plasma generation, even if a wiring abnormality occurs in the edge ring circuit. Note that it is preferable to determine in advance, by experiment or the like, the plasma generation conditions under which abnormal discharge or the like does not occur, according to the plasma processing apparatus 1 to be used.

[0096] Furthermore, according to this embodiment, a current can be passed through the plasma generated inside the chamber 10, regarding it as a low-resistance load, so that the voltage value of the disconnection detection voltage V3 applied to the edge ring circuit from the DC power supply 60 can be reduced. As a result, the load on the electrostatic chuck 13 and the generation of residual charge can be appropriately reduced.

[0097] Furthermore, in relation to being able to reduce the voltage value of the disconnection detection voltage V3 in this manner, unlike the method for detecting wiring abnormalities in the first embodiment, the voltage waveform of the disconnection detection voltage V3 is not limited to a pulse wave, and a continuous wave can be used.

[0098] As described above, wiring abnormality can be detected in the upper electrode circuit connected to the second DC power supply 70 by a similar method. That is, a DC voltage is applied to the electrode plate 21 constituting the upper electrode instead of the edge ring 14 (chamber 10), and a measurement value of a current flowing due to the application of the DC voltage is compared with a threshold value, thereby detecting wiring abnormality in the upper electrode circuit. In such a case, the electrode plate 21 constituting the upper electrode corresponds to the DC voltage application member according to the technology of the present disclosure.

[0099] In the above embodiment, the case where a wiring abnormality in an edge ring circuit or an upper electrode circuit is detected has been described as an example, but the circuit to which the wiring abnormality detection method according to the present disclosure is applied is not limited to the above embodiment. That is, wiring abnormality can be detected in any circuit as long as it is a power supply circuit to which a DC power supply is connected. In particular, if the power supply circuit to be detected for wiring abnormality is connected in an equivalent circuit to any object that can be regarded as a low-resistance load (in this embodiment, the plasma generated inside the chamber 10), even if there is no difference in the measured current between the normal connection state of the power supply circuit and when a wiring abnormality occurs, the wiring abnormality can be appropriately detected.

[0100] The threshold values ​​used in the above embodiment are merely examples. For example, other elements may be used as threshold values ​​instead of the measured current values. In addition, the values ​​used as threshold values ​​may be changed as appropriate based on the method of detecting wiring abnormalities.

[0101] The timing for wiring abnormality detection according to the present disclosure can be determined arbitrarily. That is, for example, it may be performed periodically between plasma processing processes performed on the wafer W in the plasma processing apparatus 1, or it may be performed during setup such as start-up of the plasma processing apparatus 1. However, the above-mentioned wiring abnormalities such as disconnection and breakage of the wiring are often caused by the setup of the apparatus. For this reason, it is desirable to perform wiring abnormality detection according to the present disclosure at least during setup such as start-up of the plasma processing apparatus 1.

[0102] In the above embodiment, the wiring abnormality detection is performed in a state where the wafer W is not loaded into the chamber 10, but the wiring abnormality detection may be performed in a state where the wafer W is loaded into the chamber 10. That is, for example, when a defect is confirmed during the wafer processing process, the wiring abnormality detection may be performed as appropriate. In such a case, when plasma is generated inside the chamber 10, the lower limit of the internal pressure of the chamber 10, which is one of the conditions related to the plasma generation, can be lowered as described above.

[0103] The embodiments disclosed herein should be considered as illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0104] 1. Plasma processing equipment 10. Chamber 11 Stage 13 Electrostatic Chuck 14 Edge Ring 21 Electrode plate 60 DC power supply 62 RF Filter 70 Second DC power supply 72 Second RF Filter A Ammeter B2 Threshold B3 Threshold I2 Current value I3 Current value W wafer

Claims

1. A method for detecting a wiring abnormality in a plasma processing apparatus, comprising: The plasma processing apparatus includes: a chamber for plasma processing of a substrate therein; a stage provided inside the chamber and having an electrostatic chuck for attracting and holding the substrate; a DC power supply system for controlling the plasma generated inside the chamber; an ammeter for measuring a current flowing through the DC power supply system; The DC power supply system includes: a DC power source that applies a DC voltage to the DC power source system in the form of a pulse wave; a high frequency filter for removing high frequency components from the DC power supply; a DC voltage application member to which the DC voltage is applied is electrically connected in this order to form a circuit, The detection method includes: applying the DC voltage by the DC power supply; measuring a current flowing through the circuit constituting the DC power supply system; comparing the current measurement to a predetermined threshold; A wiring abnormality detection method, comprising: determining whether or not a wiring abnormality has occurred in the circuit constituting the DC power supply system based on the comparing step.

2. A method for detecting a wiring abnormality in a plasma processing apparatus, comprising: The plasma processing apparatus includes: a chamber for plasma processing of a substrate therein; a stage provided inside the chamber and having an electrostatic chuck for attracting and holding the substrate; a DC power supply system for controlling the plasma generated inside the chamber; an ammeter for measuring a current flowing through the DC power supply system; The DC power supply system includes: a DC power supply that applies a DC voltage to the DC power supply system; a high frequency filter for removing high frequency components from the DC power supply; a DC voltage application member to which the DC voltage is applied is electrically connected in this order to form a circuit, The detection method includes: applying the DC voltage by the DC power supply; measuring a current flowing through the circuit constituting the DC power supply system; comparing the current measurement to a predetermined threshold; determining whether or not a wiring abnormality has occurred in the circuit constituting the DC power supply system based on the comparing step; and identifying a location in the circuit where the wiring anomaly occurs based on the measured current value.

3. A method for detecting a wiring abnormality in a plasma processing apparatus, comprising: The plasma processing apparatus includes: a chamber for plasma processing of a substrate therein; a stage provided inside the chamber and having an electrostatic chuck for attracting and holding the substrate; a DC power supply system for controlling the plasma generated inside the chamber; an ammeter for measuring a current flowing through the DC power supply system; The DC power supply system includes: a DC power supply that applies a DC voltage to the DC power supply system; a high frequency filter for removing high frequency components from the DC power supply; a DC voltage application member to which the DC voltage is applied is electrically connected in this order to form a circuit, The detection method includes: applying the DC voltage by the DC power supply; measuring a current flowing through the circuit constituting the DC power supply system; comparing the current measurement to a predetermined threshold; the threshold value is determined in advance by comparing a first VI characteristic obtained by applying the DC voltage in a state where no wiring abnormality occurs in the DC power supply system with a second VI characteristic obtained by applying the DC voltage in a state where a wiring abnormality occurs in the DC power supply system; A wiring abnormality detection method, comprising: determining whether or not a wiring abnormality has occurred in the circuit constituting the DC power supply system based on the comparing step.

4. A method for detecting a wiring abnormality in a plasma processing apparatus, comprising: The plasma processing apparatus includes: a chamber for plasma processing of a substrate therein; a stage provided inside the chamber and having an electrostatic chuck for attracting and holding the substrate; a DC power supply system for controlling the plasma generated inside the chamber; an ammeter for measuring a current flowing through the DC power supply system; The DC power supply system includes: a DC power supply that applies a DC voltage to the DC power supply system; a high frequency filter for removing high frequency components from the DC power supply; a DC voltage application member to which the DC voltage is applied is electrically connected in this order to form a circuit, The detection method includes: detecting a short circuit in the circuit; applying the DC voltage by the DC power supply; measuring a current flowing through the circuit constituting the DC power supply system; comparing the current measurement to a predetermined threshold; A wiring abnormality detection method, comprising: determining whether or not a wiring abnormality has occurred in the circuit constituting the DC power supply system based on the comparing step.

5. A method for detecting a wiring abnormality in a plasma processing apparatus, comprising: The plasma processing apparatus includes: a chamber for plasma processing of a substrate therein; a stage provided inside the chamber and having an electrostatic chuck for attracting and holding the substrate; a DC power supply system for controlling the plasma generated inside the chamber; an ammeter for measuring a current flowing through the DC power supply system; The DC power supply system includes: a DC power supply that applies a DC voltage to the DC power supply system; a high frequency filter for removing high frequency components from the DC power supply; a DC voltage application member to which the DC voltage is applied is electrically connected in this order to form a circuit, the DC voltage application member is an edge ring disposed around the substrate placed on the stage, or an upper electrode disposed above the stage, The detection method includes: In a state where the substrate for product is not carried into the inside of the plasma processing apparatus, applying the DC voltage by the DC power supply; measuring a current flowing through the circuit constituting the DC power supply system; comparing the current measurement to a predetermined threshold; A wiring abnormality detection method, comprising: determining whether or not a wiring abnormality has occurred in the circuit constituting the DC power supply system based on the comparing step.

6. A method for detecting a wiring abnormality in a plasma processing apparatus, comprising: The plasma processing apparatus includes: a chamber for plasma processing of a substrate therein; a stage provided inside the chamber and having an electrostatic chuck for attracting and holding the substrate; a DC power supply system for controlling the plasma generated inside the chamber; an ammeter for measuring a current flowing through the DC power supply system; The DC power supply system includes: a DC power supply that applies a DC voltage to the DC power supply system; a high frequency filter for removing high frequency components from the DC power supply; a DC voltage application member to which the DC voltage is applied is electrically connected in this order to form a circuit, The detection method includes: generating plasma in the chamber under conditions of an internal pressure of the chamber of 1000 mTorr or less and an applied voltage of 500 W or less; applying the DC voltage by the DC power supply; measuring a current flowing through the circuit constituting the DC power supply system; comparing the current measurement to a predetermined threshold; A wiring abnormality detection method, comprising: determining whether or not a wiring abnormality has occurred in the circuit constituting the DC power supply system based on the comparing step.

7. A method for detecting a wiring abnormality in a plasma processing apparatus, comprising: The plasma processing apparatus includes: a chamber for plasma processing of a substrate therein; a stage provided inside the chamber and having an electrostatic chuck for attracting and holding the substrate; a DC power supply system for controlling the plasma generated inside the chamber; an ammeter for measuring a current flowing through the DC power supply system; The DC power supply system includes: a DC power supply that applies a DC voltage to the DC power supply system; a high frequency filter for removing high frequency components from the DC power supply; a DC voltage application member to which the DC voltage is applied is electrically connected in this order to form a circuit, The detection method includes: generating a plasma within the chamber; applying the DC voltage in the form of a pulse wave or a continuous wave by the DC power source; measuring a current flowing through the circuit constituting the DC power supply system; comparing the current measurement to a predetermined threshold; A wiring abnormality detection method, comprising: determining whether or not a wiring abnormality has occurred in the circuit constituting the DC power supply system based on the comparing step.

8. The wiring abnormality detection method according to any one of claims 2 to 7, wherein the DC power supply applies the DC voltage in the form of a pulse wave.

9. 8. The wiring abnormality detection method according to claim 3, further comprising: identifying a location of an occurrence of a wiring abnormality in the circuit based on the measured current value.

10. The method for detecting a wiring abnormality according to any one of claims 4 to 7, wherein the threshold value is determined in advance by comparing a first VI characteristic obtained by applying the DC voltage in a state where no wiring abnormality occurs in the DC power supply system with a second VI characteristic obtained by applying the DC voltage in a state where a wiring abnormality occurs in the DC power supply system.

11. The wiring abnormality detection method according to any one of claims 5 to 7, further comprising detecting a short circuit in the circuit prior to application of the DC voltage from the DC power supply.

12. 8. The wiring abnormality detection method according to claim 6, wherein the DC voltage application member is an edge ring disposed around the substrate placed on the stage, or an upper electrode disposed above the stage.

13. 6. The wiring abnormality detection method according to claim 1, further comprising the step of generating plasma inside the chamber prior to application of the DC voltage from the DC power supply.

14. The plasma is generated under conditions in which the internal pressure of the chamber is 1000 mTorr or less and the applied voltage is 500 W or less; The wiring abnormality detection method according to claim 13 , wherein the DC power supply applies the DC voltage in the form of a pulse wave or a continuous wave.

15. A plasma processing apparatus for performing plasma processing on a substrate, comprising: a chamber within which plasma processing of the substrate is performed; a stage provided inside the chamber and having an electrostatic chuck for attracting and holding the substrate; a high frequency power source for generating plasma within the chamber; a DC power supply system for controlling the plasma generated inside the chamber; an ammeter for measuring a current flowing through the DC power supply system; A control unit that controls the operation of the DC power supply system, The DC power supply system includes: a DC power source that applies a DC voltage to the DC power source system in the form of a pulse wave; a high frequency filter for removing high frequency components from the DC power supply; a DC voltage application member to which the DC voltage is applied is electrically connected in this order to form a circuit, The control unit is applying the DC voltage by the DC power supply; measuring a current flowing through the circuit constituting the DC power supply system; comparing the measured current with a predetermined threshold value; The plasma processing apparatus determines whether or not a wiring abnormality occurs in the circuit constituting the DC power supply system based on the comparing step.

16. A plasma processing apparatus for performing plasma processing on a substrate, comprising: a chamber within which plasma processing of the substrate is performed; a stage provided inside the chamber and having an electrostatic chuck for attracting and holding the substrate; a high frequency power source for generating plasma within the chamber; a DC power supply system for controlling the plasma generated inside the chamber; an ammeter for measuring a current flowing through the DC power supply system; A control unit that controls the operation of the DC power supply system, The DC power supply system includes: a DC power supply that applies a DC voltage to the DC power supply system; a high frequency filter for removing high frequency components from the DC power supply; a DC voltage application member to which the DC voltage is applied is electrically connected in this order to form a circuit, The control unit is applying the DC voltage by the DC power supply; measuring a current flowing through the circuit constituting the DC power supply system; comparing the measured current with a predetermined threshold value; determining whether or not a wiring abnormality has occurred in the circuit constituting the DC power supply system based on the comparing step; The plasma processing apparatus identifies a location in the circuit where the wiring abnormality has occurred based on the measured current value.

17. A plasma processing apparatus for performing plasma processing on a substrate, comprising: a chamber within which plasma processing of the substrate is performed; a stage provided inside the chamber and having an electrostatic chuck for attracting and holding the substrate; a high frequency power source for generating plasma within the chamber; a DC power supply system for controlling the plasma generated inside the chamber; an ammeter for measuring a current flowing through the DC power supply system; A control unit that controls the operation of the DC power supply system, The DC power supply system includes: a DC power supply that applies a DC voltage to the DC power supply system; a high frequency filter for removing high frequency components from the DC power supply; a DC voltage application member to which the DC voltage is applied is electrically connected in this order to form a circuit, The control unit is applying the DC voltage by the DC power supply; measuring a current flowing through the circuit constituting the DC power supply system; comparing the measured current with a predetermined threshold value; the threshold value is determined in advance by comparing a first VI characteristic obtained by applying the DC voltage in a state where no wiring abnormality occurs in the DC power supply system with a second VI characteristic obtained by applying the DC voltage in a state where a wiring abnormality occurs in the DC power supply system; The plasma processing apparatus determines whether or not a wiring abnormality occurs in the circuit constituting the DC power supply system based on the comparing step.

18. A plasma processing apparatus for performing plasma processing on a substrate, comprising: a chamber within which plasma processing of the substrate is performed; a stage provided inside the chamber and having an electrostatic chuck for attracting and holding the substrate; a high frequency power source for generating plasma within the chamber; a DC power supply system for controlling the plasma generated inside the chamber; an ammeter for measuring a current flowing through the DC power supply system; A control unit that controls the operation of the DC power supply system, The DC power supply system includes: a DC power supply that applies a DC voltage to the DC power supply system; a high frequency filter for removing high frequency components from the DC power supply; a DC voltage application member to which the DC voltage is applied is electrically connected in this order to form a circuit, The control unit is detecting a short circuit in the circuit; applying the DC voltage by the DC power supply; measuring a current flowing through the circuit constituting the DC power supply system; comparing the measured current with a predetermined threshold value; The plasma processing apparatus determines whether or not a wiring abnormality occurs in the circuit constituting the DC power supply system based on the comparing step.

19. A plasma processing apparatus for performing plasma processing on a substrate, comprising: a chamber within which plasma processing of the substrate is performed; a stage provided inside the chamber and having an electrostatic chuck for attracting and holding the substrate; a high frequency power source for generating plasma within the chamber; a DC power supply system for controlling the plasma generated inside the chamber; an ammeter for measuring a current flowing through the DC power supply system; A control unit that controls the operation of the DC power supply system, The DC power supply system includes: a DC power supply that applies a DC voltage to the DC power supply system; a high frequency filter for removing high frequency components from the DC power supply; a DC voltage application member to which the DC voltage is applied is electrically connected in this order to form a circuit, the DC voltage application member is an edge ring disposed around the substrate placed on the stage, or an upper electrode disposed above the stage, The control unit is In a state where the substrate for product is not carried into the inside of the plasma processing apparatus, applying the DC voltage by the DC power supply; measuring a current flowing through the circuit constituting the DC power supply system; comparing the measured current with a predetermined threshold value; The plasma processing apparatus determines whether or not a wiring abnormality occurs in the circuit constituting the DC power supply system based on the comparing step.

20. A plasma processing apparatus for performing plasma processing on a substrate, comprising: a chamber within which plasma processing of the substrate is performed; a stage provided inside the chamber and having an electrostatic chuck for attracting and holding the substrate; a high frequency power source for generating plasma within the chamber; a DC power supply system for controlling the plasma generated inside the chamber; an ammeter for measuring a current flowing through the DC power supply system; A control unit that controls the operation of the DC power supply system, The DC power supply system includes: a DC power supply that applies a DC voltage to the DC power supply system; a high frequency filter for removing high frequency components from the DC power supply; a DC voltage application member to which the DC voltage is applied is electrically connected in this order to form a circuit, The control unit is generating plasma in the chamber under conditions of an internal pressure of the chamber of 1000 mTorr or less and an applied voltage of 500 W or less; applying the DC voltage by the DC power supply; measuring a current flowing through the circuit constituting the DC power supply system; comparing the measured current with a predetermined threshold value; The plasma processing apparatus determines whether or not a wiring abnormality occurs in the circuit constituting the DC power supply system based on the comparing step.

21. A plasma processing apparatus for performing plasma processing on a substrate, comprising: a chamber within which plasma processing of the substrate is performed; a stage provided inside the chamber and having an electrostatic chuck for attracting and holding the substrate; a high frequency power source for generating plasma within the chamber; a DC power supply system for controlling the plasma generated inside the chamber; an ammeter for measuring a current flowing through the DC power supply system; A control unit that controls the operation of the DC power supply system, The DC power supply system includes: a DC power supply that applies a DC voltage to the DC power supply system and is configured to be able to switch the waveform of the DC voltage applied between a pulse wave and a continuous wave; a high frequency filter for removing high frequency components from the DC power supply; a DC voltage application member to which the DC voltage is applied is electrically connected in this order to form a circuit, The control unit is generating a plasma within the chamber; applying the DC voltage in the form of a pulse wave or a continuous wave by the DC power source; measuring a current flowing through the circuit constituting the DC power supply system; comparing the measured current with a predetermined threshold value; The plasma processing apparatus determines whether or not a wiring abnormality occurs in the circuit constituting the DC power supply system based on the comparing step.

22. 22. The plasma processing apparatus according to claim 15, wherein the DC voltage application member is an edge ring disposed around the substrate placed on the stage, or an upper electrode disposed above the stage.

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