Photoresist Loading Solutions for Flat Optical Device Manufacturing

Abstract

[0003] Embodiments of the present disclosure relate to a method for fabricating an optical device. One embodiment of the method includes disposing a layer of structural material on a surface of a substrate and disposing a patterned photoresist on the structural material layer. The patterned photoresist has at least one device portion and at least one auxiliary portion. Each device portion and each auxiliary portion exposes an unmasked portion of the structural material layer. The unmasked portion of the structural material layer corresponding to each device portion and each auxiliary portion is etched. Etching the unmasked portions forms at least one optical device having a device structure corresponding to the unmasked portion of the at least one device portion and at least one auxiliary region having an auxiliary structure corresponding to the unmasked portion of the at least one auxiliary portion.

Description

[Technical field]

[0001] FIELD OF THE DISCLOSURE

[0002] Embodiments of the present disclosure relate generally to optical devices. More particularly, embodiments described herein provide for the manufacture of one or more optical devices. [Background technology]

[0002] Optical devices can be used to manipulate the propagation of light. One example of an optical device is a flat optical device. Flat optical devices in the visible and near infrared spectrum may require a transparent substrate with structures, such as nanostructures, disposed thereon. However, processing a transparent substrate to form an optical device is complex and difficult as a new technology. For example, large areas of structural material can be etched away in areas between adjacent optical devices and between the optical devices and the periphery of the substrate, such that the optical devices are surrounded only by the surface of the substrate. Surrounding the optical devices only by the surface of the substrate can result in an inability to determine the end point of the etching process, leading to undesirable critical dimensions of the structures.

[0003] Thus, there is a need in the art for improved methods of manufacturing optical devices. Summary of the Invention

[0004] In one embodiment, a method is provided. The method includes disposing a structural material layer on a surface of a substrate and disposing a patterned photoresist on the structural material layer. The patterned photoresist has at least one device portion and at least one auxiliary portion. Each device portion and each auxiliary portion exposes an unmasked portion of the structural material layer. The unmasked portion of the structural material layer corresponding to each device portion and each auxiliary portion is etched. Etching the unmasked portion forms at least one optical device having a device structure corresponding to the unmasked portion of the at least one device portion and at least one auxiliary region having an auxiliary structure corresponding to the unmasked portion of the at least one auxiliary portion.

[0005] In another embodiment, a method is provided. The method includes disposing a structural material layer on a surface of a substrate and disposing a patterned photoresist on the structural material layer. The patterned photoresist has at least one device portion exposing an unmasked device portion of the structural material layer, at least one auxiliary portion masking at least one auxiliary region of the substrate, an auxiliary region defined by an intermediate region to be formed and a periphery of the substrate, and at least one intermediate portion exposing an unmasked intermediate portion of the structural material layer between each device portion and each auxiliary portion. The unmasked device portion and the unmasked intermediate portion of the structural material layer corresponding to each device portion and each intermediate portion are etched. Etching the unmasked device portion and the unmasked intermediate portion forms at least one optical device having a device structure corresponding to the unmasked portion of the at least one device portion and at least one intermediate region between each optical device and each auxiliary region exposing the surface of the substrate. The auxiliary region is masked by each auxiliary portion.

[0006] In yet another embodiment, a method is provided. The method includes disposing a structural material layer on a surface of a substrate and disposing a patterned photoresist on the structural material layer. The patterned photoresist has at least one device portion exposing an unmasked device portion of the structural material layer and at least one auxiliary portion masking at least one auxiliary region of the substrate. The auxiliary region is defined by a middle region to be formed and a periphery of the substrate, and the at least one intermediate portion exposes an unmasked intermediate portion of the structural material layer between each of the device portions and each of the auxiliary portions. The unmasked distance between each of the device portions and each of the auxiliary portions varies. The unmasked device portion and the unmasked intermediate portion of the structural material layer corresponding to each of the device portions and each of the intermediate portions are etched. Etching the unmasked device portion and the unmasked intermediate portion forms at least one optical device having a device structure corresponding to the unmasked portion of the at least one device portion and at least one intermediate region between each of the optical devices and each of the auxiliary regions exposing the surface of the substrate. The auxiliary region is masked by each of the auxiliary portions, and the exposed distance between each of the intermediate regions and each of the auxiliary portions varies.

[0007] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure, briefly summarized above, can be had by reference to embodiments, some of which are illustrated in the accompanying drawings, which should be noted, however, that the accompanying drawings illustrate only typical embodiments of the present disclosure, and therefore should not be considered as limiting its scope, since the present disclosure may admit of other equally effective embodiments. [Brief description of the drawings]

[0008] [Figure 1] 1 is a flow diagram illustrating operations of a method for manufacturing one or more optical devices, according to an embodiment. [Figure 2A-C] 1A-1D are schematic top views of a substrate during a method of manufacturing an optical device according to an embodiment; [Fig. 2D-F]1A-1D are schematic cross-sectional views of a substrate during a method of manufacturing an optical device according to an embodiment; [Figure 3A-C] 1A-1D are schematic top views of a substrate during a method of manufacturing an optical device according to an embodiment; [Fig. 3D-F] 1A-1D are schematic cross-sectional views of a substrate during a method of manufacturing an optical device according to an embodiment; [Figure 4] 1 is a flow diagram illustrating operations of a method for manufacturing one or more optical devices, according to an embodiment. [Figure 5A-C] 1A-1D are schematic top views of a substrate during a method of manufacturing an optical device according to an embodiment; [Fig. 5D-F] 1A-1D are schematic cross-sectional views of a substrate during a method of manufacturing an optical device according to an embodiment; [Figure 6A-C] 1A-1D are schematic top views of a substrate during a method of manufacturing an optical device according to an embodiment; [Figure 6D-F] 1A-1D are schematic cross-sectional views of a substrate during a method of manufacturing an optical device according to an embodiment; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] An embodiment of the disclosure relates to a method for fabricating an optical device. One embodiment of the method includes disposing a layer of structural material on a surface of a substrate and disposing a patterned photoresist on the structural material layer. The patterned photoresist has at least one device portion and at least one auxiliary portion. Each device portion and each auxiliary portion exposes an unmasked portion of the structural material layer. The unmasked portion of the structural material layer corresponding to each device portion and each auxiliary portion is etched. Etching the unmasked portion forms at least one optical device having a device structure corresponding to the unmasked portion of the at least one device portion and at least one auxiliary region having an auxiliary structure corresponding to the unmasked portion of the at least one auxiliary portion.

[0010] 1 is a flow diagram illustrating operations of a method 100 for manufacturing one or more optical devices 200, 300. FIGS. 2A-2C are schematic top views of a substrate 201 during a method 100 for manufacturing an optical device 200 according to one embodiment that may be combined with other embodiments described herein, and FIGS. 2D-2F are schematic cross-sectional views of the substrate 201. FIGS. 3A-3C are schematic top views of a substrate 201 during a method 100 for manufacturing an optical device 300 according to another embodiment that may be combined with other embodiments described herein, and FIGS. 3D-3F are schematic cross-sectional views of the substrate 201.

[0011] In operation 101, as shown in Figures 2A and 2D and Figures 3A and 3D, a photoresist material is disposed on a structural material layer 202. The structural material layer 202 is disposed on a surface 203 of a substrate 201. The photoresist material is developed to form a patterned photoresist 206, 306. The photoresist material may be disposed on the structural material layer 202 using a spin-on coating process. The patterned photoresist 206, 306 may include, but is not limited to, a photosensitive polymer-containing material. Developing the photoresist material may include performing a lithography process, such as photolithography and digital lithography.

[0012] The substrate 201 can also be selected to transmit an appropriate amount of light of a desired wavelength or range of wavelengths, such as one or more wavelengths from about 100 to about 3000 nanometers. In some embodiments, but not limited to, the substrate 201 is configured such that the substrate 201 transmits about 50% or more, 60% or more, 70% or more, 80% or more, 90% or more, 95% or more, 99% or more of the IR to UV region of the light spectrum. The substrate 201 can be formed from any suitable material, provided that the substrate 201 can adequately transmit light of a desired wavelength or range of wavelengths and can function as a suitable support for an optical device. In some embodiments, which can be combined with other embodiments described herein, the material of the substrate 201 has a relatively low refractive index compared to the refractive index of the structural material layer 202. The substrate selection can include substrates of any suitable material, including, but not limited to, amorphous dielectrics, non-amorphous dielectrics, crystalline dielectrics, silicon oxides, polymers, and combinations thereof. In some embodiments, which may be combined with other embodiments described herein, the substrate 201 includes a transparent material. In one embodiment, which may be combined with other embodiments described herein, the substrate 201 is transparent and has an absorption coefficient less than 0.001. Suitable examples may include oxides, sulfides, phosphides, tellurides, or combinations thereof. In one example, the substrate 201 includes silicon (Si), silicon dioxide (SiO2), sapphire, and high refractive index transparent material-containing materials.

[0013] The structural material layer 202 can be disposed on the surface 203 of the substrate 201 using a liquid material injection casting process, a spin-on coating process, a liquid spray coating process, a dry powder coating process, a screen printing process, a doctor blade process, a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, a plasma enhanced CVD (FCVD) process, a flowable CVD (FCVD) process, an atomic layer deposition (ALD) process, an evaporation process, or a sputtering process. In one embodiment, which can be combined with other embodiments described herein, the structural material layer 202 includes a metal-containing dielectric material, including but not limited to titanium dioxide (TiO2), zinc oxide (ZnO), tin dioxide (SnO2), aluminum doped zinc oxide (AZO), fluorine doped tin oxide (FTO), cadmium stannate (tin oxide) (CTO), niobium oxide (Nb2O5), and zinc stannate (tin oxide) (SnZnO3) containing materials. In another embodiment, which can be combined with other embodiments described herein, the structural material comprises a non-conductive non-crystalline material, such as a dielectric material. The dielectric material can include amorphous dielectrics, non-amorphous dielectrics, and crystalline dielectrics. Examples of dielectric materials include, but are not limited to, Si-containing materials, such as silicon nitride (Si3N4), and amorphous silicon (a-Si).

[0014] In one embodiment, which may be combined with other embodiments described herein, in operation 101, a patterned photoresist 206, 306 is disposed on one or more etch layers 204, such as a hard mask or etch stop layer, disposed on the structural material layer 202. The hard mask can be disposed on the structural material layer 202 using a liquid material injection casting process, a spin-on coating process, a liquid spray coating process, a dry powder coating process, a screen printing process, a doctor blade process, a PVD process, a CVD process, a PECVD process, an FCVD process, an ALD process, an evaporation process, or a sputtering process. In one embodiment, the hard mask is an opaque hard mask that is removed after the one or more optical devices 200 are formed. In another embodiment, the hard mask is a transparent hard mask. Examples of hard masks include chromium (Cr), silver (Ag), Si3N 4、 These include, but are not limited to, SiO2, TiN, and carbon (C) containing materials.

[0015] In one embodiment, which can be combined with other embodiments described herein, the patterned photoresist 206, 306 includes at least one device portion 208, 308 and at least one auxiliary portion 212, 312. In another embodiment, which can be combined with other embodiments described herein, the patterned photoresist 206, 306 includes at least one device portion 208, 308, at least one intermediate portion 210, 310, and at least one auxiliary portion 212, 312. Each intermediate portion 210, 310 is between the device portion 208, 308 and the auxiliary portion 212, 312. Each of the at least one device portion 208, 308, at least one intermediate portion 210, 310, and at least one auxiliary portion 212, 312 exposes an unmasked portion 205, 305 of the structural material layer 202. As shown in Figures 2C and 2F and Figures 3C and 3F, each device portion 208, 308 corresponds to one of the optical devices 200, 300 having an array of device structures 207 formed on or integral with the surface 203 of the substrate 201. Each intermediate portion 210, 310 corresponds to an intermediate region 214, 314 between the optical device 200, 300 and an auxiliary region 216, 316. Each auxiliary portion 212, 312 corresponds to an auxiliary region 216, 316 of the substrate 201 having an array of auxiliary structures 209, 309, also known as dummy structures, described in detail herein, formed on or integral with the surface 203 of the substrate 201. The auxiliary region 216, 316 is defined by a space defined by each intermediate region 214, 314 and the periphery of the substrate 201.

[0016] In operation 102, the unmasked portions 205, 305 of the structural material layer 202 are etched, as shown in Figures 2B and 2E and Figures 3B and 3E. Etching the unmasked portions 205, 305 of the structural material layer 202 includes at least one dry etching process, including but not limited to ion implantation, ion etching, reactive ion etching (RIE), directional RIE, plasma etching, and wet etching. Etching the unmasked portions 205, 305 forms the device structures 207 of the optical devices 200, 300 and exposes the surface 203 of the substrate 201 in the intermediate regions 214, 314 and the support structures 209, 309 in the support regions 216, 316. In one embodiment, which can be combined with other embodiments described herein, the unmasked portions 211 of the one or more etching layers 204 are etched before the unmasked portions 205, 305 of the structural material layer 202. In an embodiment, which may be combined with other embodiments described herein, at least one of the etch layers 204 has an etch selectivity greater than the structural material layer 202. In operation 103, the patterned photoresist 206, 306 is removed, as shown in Figures 2C and 2F and 3C and 3F. Removing the patterned photoresist 206, 306 may include a lithography process or an etching process as described herein. In an embodiment with one or more etch layers 204, the one or more etch layers 204 are removed. Removing the one or more etch layers 204 may include ion etching, RIE, or selective wet chemical etching.

[0017] In an embodiment that can be combined with other embodiments described herein, the device structures 207 can have the same dimensions, such as height and width. In another embodiment that can be combined with other embodiments described herein, at least one of the device structures 207 can have at least one dimension, such as one of height and width, that is different from a dimension of the additional structures of the device structures 207. In some embodiments described herein, the width of each of the device structures 207 is the critical dimension 213. In some embodiments described herein, the width of each of the auxiliary structures 209, 309 is the critical dimension 221, 321. In an embodiment that can be combined with other embodiments described herein, the device structures 207 can have the same refractive index. In another embodiment that can be combined with other embodiments described herein, at least one of the device structures 207 can have a refractive index that is different from the refractive index of the additional structures of the device structures 207. In some embodiments that can be combined with other embodiments described herein, the optical device 200, 300 is a metasurface having device structures 207 that are nanostructures in the form of nanoscale features. In one example, the nanostructures have a critical dimension 213, 313 that is less than about 1000 nm, such as less than about 500 nm, less than about 200 nm, less than about 100 nm, or even less than about 20 nm.

[0018] The device structures 207 have a device gap 218 defined as the distance between adjacent device structures 207. In an embodiment that can be combined with other embodiments described herein, the device gap 218 of each of the device structures 207 can be substantially the same. In another embodiment that can be combined with other embodiments described herein, at least one of the device structures 207 can have at least one different device gap 218. The support structures 209, 309 have a support gap 219, 319 defined as the distance between adjacent support structures 307, 309. In an embodiment that can be combined with other embodiments described herein, the support gap 219, 319 of each of the support structures 209, 309 can be substantially the same. In another embodiment that can be combined with other embodiments described herein, at least one of the support structures 209, 309 can have at least one different support gap 219, 319.

[0019] The method 100 forms one or more optical devices 200 on a substrate 201, separated from an auxiliary region 216 by an intermediate region 214. The optical devices 200 have a relationship between a critical dimension 213 of the device structure 207 and a critical dimension 221 of the auxiliary structure 209. In portions of the optical devices 200 and auxiliary regions 216 having substantially the same device gaps 218 and auxiliary gaps 219, the critical dimension 213 of the device structure 207 and the critical dimension 221 of the auxiliary structure 209 are substantially the same. The substantially equal critical dimensions 213 and 221 of the portions having substantially equal device gaps 218 and auxiliary gaps 219 provide control of loading dependence during etching of the unmasked portions 205 of the structural material layer 202. The loading dependence indicates the relationship between the loading of the patterned photoresist 206, 306, i.e., the exposed area of ​​the unmasked portions 205, and the etch rate of the structural material layer 202.

[0020] Due to the substantially equal critical dimension 213 of the device structure 207 and the critical dimension 221 of the assist structure 209, the width 223 of the unmasked portion 205 is substantially the same for both the device portion 208 and the assist portion 212 corresponding to the portion of the optical device 200 and the assist region 216 having substantially the same device gap 218 and assist gap 219. The unmasked portion 205 of substantially equal width 223 provides a constant loading of the patterned photoresist 206. The constant loading provides endpoint detection during the etching of operation 102 to provide a critical dimension 213 of the device structure 207 of less than about 1000 nm, e.g., less than about 500 nm, less than about 200 nm, less than about 100 nm, or even less than about 20 nm. The endpoint detection provides the ability to terminate the etching of operation 102 as soon as the device structure 207 is formed such that the critical dimension 213 and the sidewall profile of the device structure 207 are maintained. As a result of the constant loading of the patterned photoresist 206, 306, the critical dimension 213 is substantially the same for the device structures 207 and the assist structures 209. The critical dimension 213 is controlled such that the assist structures 209 reduce or prevent optical interaction of the beam with the substrate and the optical device 200.

[0021] The method 100 forms one or more optical devices 300 on the substrate 201, separated from the assist regions 316 by intermediate regions 314. The optical devices 300 have a relationship between the critical dimension 213 of the device structures 207 and the critical dimension 321 of the assist structures 309. In portions of the optical devices 300 and the assist regions 316 having substantially the same device gaps 218 and assist gaps 319, the critical dimension 213 of the device structures 207 is smaller than the critical dimension 321 of the assist structures 309. The critical dimension 213 of the device structures 207 being smaller than the critical dimension 321 of the assist structures 309 provides a substantially constant loading of the patterned photoresist 306. The substantially constant loading provides endpoint detection during the etching of operation 102, providing a critical dimension 213 of the device structures 207 of less than about 1000 nm, e.g., less than about 500 nm, less than about 200 nm, less than about 100 nm, or even less than about 20 nm. As a result of the substantially constant loading of the patterned photoresist 306, the critical dimension 213 of the device structure 207 is smaller than the critical dimension 315 of the assist structures 309, preserving the sidewall profile of the device structure 207. The critical dimension 315 is controlled such that the assist structures 309 reduce or prevent optical interaction of the beam with the substrate and the optical apparatus 300.

[0022] 4 is a flow diagram illustrating operations of a method 400 for manufacturing one or more optical devices 500, 600. Figures 5A-5C are schematic top views of a substrate 201 during a method 400 for manufacturing an optical device 500 according to one embodiment that may be combined with other embodiments described herein, and Figures 5D-5F are schematic cross-sectional views of the substrate 201. Figures 6A-6C are schematic top views of a substrate 201 during a method 400 for manufacturing an optical device 600 according to another embodiment that may be combined with other embodiments described herein, and Figures 6D-6F are schematic cross-sectional views of the substrate 201.

[0023] In operation 401, as shown in FIGS. 5A and 5D and 6A and 6D, a photoresist material is disposed on the structural material layer 202. The structural material layer 202 is disposed on the surface 203 of the substrate 201. The photoresist material is developed to form a patterned photoresist 506, 606. The photoresist material can be disposed on the structural material layer 202 using a spin-on coating process. The photoresist material can include, but is not limited to, a photosensitive polymer-containing material. In an embodiment that can be combined with other embodiments described herein, in operation 401, the patterned photoresist 506, 606 is disposed on one or more etch layers 204, such as a hard mask or etch stop layer, disposed on the structural material layer 202. Developing the photoresist material can include performing a lithography process, such as photolithography and digital lithography.

[0024] In one embodiment, which can be combined with other embodiments described herein, the patterned photoresist 506, 606 includes at least one device portion 508, 608 and at least one auxiliary portion 512, 612. In another embodiment, which can be combined with other embodiments described herein, the patterned photoresist 506, 606 includes at least one device portion 508, 608, at least one intermediate portion 510, 610, and at least one auxiliary portion 512, 612. Each intermediate portion 510, 610 is between the device portion 508, 608 and the auxiliary portion 512, 612. The at least one device portion 508, 608 exposes the unmasked device portion 505 of the structural material layer 202. The auxiliary portion 512, 612 masks, i.e., covers, the structural material layer 202. At least one intermediate portion 510, 610 exposes an unmasked intermediate portion 511, 611 of the structural material layer 202 between the device portion 508, 608 and the auxiliary portion 512, 612. Each of the unmasked intermediate portions 511, 611 has an unmasked distance 517, 617 from the device portion 508, 608 to the auxiliary portion 512, 612. In one embodiment, which can be combined with other embodiments described herein, the unmasked distance 517 between each device portion 508 and each auxiliary portion 512 is constant. In another embodiment, which can be combined with other embodiments described herein, the unmasked distance 617 between each device portion 608 and each auxiliary portion 612 varies.

[0025] In operation 402, as shown in Figures 5B and 5E and Figures 6B and 6E, the unmasked device portion 505 and the unmasked intermediate portion 511, 611 of the structural material layer 202 are etched. Etching the unmasked device portion 505 and the unmasked intermediate portion 511, 611 of the structural material layer 202 includes at least one dry etching process, including but not limited to at least one of ion implantation, ion etching, reactive ion etching (RIE), directional RIE, plasma etching, and wet etching. Etching the unmasked device portion 505 and the unmasked intermediate portion 511, 611 forms the device structure 207 of the optical device 500, 600 and exposes the surface 203 of the substrate 201 in the intermediate region 514, 614. The auxiliary portions 512, 612 of the patterned photoresist 506, 606 remain on the structural material layer 202.

[0026] As shown in Figures 5C and 5D and 6C and 6F, each device portion 508, 608 corresponds to one of the optical devices 500, 600 having an array of device structures 207 formed on or integrated with the surface 203 of the substrate 201. Each intermediate portion 510, 610 corresponds to an intermediate region 514, 614 between the optical device 500, 600 and an auxiliary region 516, 616. Each auxiliary portion 512, 612 corresponds to an auxiliary region 516, 616 of the substrate 201. The auxiliary region 516, 616 is defined by a space defined by each intermediate region 514, 614 and the periphery of the substrate 201. The auxiliary portion 512, 612 of the patterned photoresist 506, 606 is a dark field mask over the auxiliary portion 512, 612.

[0027] In one embodiment, which may be combined with other embodiments described herein, the unmasked portions 211 of the one or more etch layers 204 are etched before the unmasked device portions 505 and the unmasked intermediate portions 511, 611 of the structural material layer 202. In operation 403, the device portions 508, 608 of the patterned photoresist 506, 506 are removed, as shown in Figures 5C and 5D and Figures 6C and 6F. Removing the device portions 508, 608 may include lithography or etching processes as described herein. In an embodiment with one or more etch layers 204, the one or more etch layers 204 are removed.

[0028] The constant unmasked distance 517 between each device portion 508 and each auxiliary portion 512 provides loading of the patterned photoresist 506. The loading provides endpoint detection during etching of operation 402 and provides a critical dimension 213 of the device structure 207 of less than about 1000 nm, e.g., less than about 500 nm, less than about 200 nm, less than about 100 nm, or even less than about 20 nm. The unmasked distance 517 between each device portion 508 and each auxiliary portion 512 corresponds to a constant exposed distance 521 of the surface 203 between each intermediate region 514 and each auxiliary portion 512. The constant exposed distance 521 provides control of the optical interaction of the auxiliary portion 512 with the light incident on the optical device 500. The varying unmasked distance 617 between each device portion 608 and each auxiliary portion 612 provides loading of the patterned photoresist 606. The loading provides endpoint detection during the etching of operation 402 and provides a critical dimension 213 of the device structure 207 of less than about 1000 nm, e.g., less than about 500 nm, less than about 200 nm, less than about 100 nm, or even less than about 20 nm. The unmasked distance 617 between each device portion 608 and each auxiliary portion 612 corresponds to a varying exposed distance 621 of the surface 203 between each intermediate region 614 and each auxiliary portion 612. The varying exposed distance 621 provides control of the optical interaction of the auxiliary portion 612 with the light incident on the optical device 600. The dark field mask of the auxiliary portions 512, 612 on top of the auxiliary portions 512, 612 acts as an aperture that prevents the beam from optically interacting with a substrate outside the optical device 500, 600, thereby preventing the beam from degrading the function and efficiency of the optical device 500, 600.

[0029] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow.

Claims

1. At least one optical device having one or more arrays of device structures, the device structures being nanostructures disposed on or integrated with a surface of a substrate, each of the device structures comprising: A device critical dimension defined by the width of the device structure, less than 1000 nanometers (nm); and Device gap, defined as the distance between adjacent device structures At least one optical device having a support region defined by an intermediate region disposed around each optical device, the support region having one or more arrays of support structures disposed on or integral with the surface of the substrate, each of the support structures comprising: a support critical dimension defined by a width of the support structure; and A support gap defined as the distance between adjacent support structures A sub-region having Including, the device structure and the support structure are disposed on the same plane of the substrate; the device structure and the support structure have the same height; An optical device, wherein the device critical dimension is smaller than the auxiliary critical dimension.

2. At least one of the device structure or the support structure is made of titanium dioxide (TiO ２ ), zinc oxide (ZnO), tin dioxide (SnO ２ ), aluminum doped zinc oxide (AZO), fluorine doped tin oxide (FTO), cadmium stannate (tin oxide) (CTO), zinc stannate (tin oxide) (SnZnO ３ ), silicon nitride (Si ３ N ４ ), niobium oxide (Nb ２ O ５ 13. The apparatus of claim 1, further comprising one or more of the following:

3. The device of claim 1 , wherein the device structure and the support structure are made of the same material.

4. At least one optical device having one or more arrays of device structures, the device structures being nanostructures disposed on or integrated with a surface of a substrate, each of the device structures comprising: A device critical dimension defined by the width of the device structure, less than 1000 nanometers (nm); and Device gap, defined as the distance between adjacent device structures At least one optical device having an intermediate region surrounding each optical device, the intermediate region exposing a surface of the substrate corresponding to an exposure distance between an auxiliary region of the substrate and each optical device, the auxiliary region having a dark field mask disposed on or integral with the surface of the substrate, the intermediate region having an auxiliary structure disposed on the surface of the substrate; Including, the device structure and the support structure are disposed on the same plane of the substrate; the device structure and the support structure have the same height; An optical device, wherein the device critical dimension is smaller than a critical dimension of the support structure.

5. The apparatus of claim 4 , wherein the dark field mask is at least one of a photoresist or a hard mask disposed over the assist structures disposed on the surface of the substrate.

6. The hard mask is made of chromium (Cr), silver (Ag), silicon nitride (Si ３ N ４ ) 、 Silicon dioxide (SiO ２ 6. The apparatus of claim 5, comprising at least one of titanium nitride (TiN), titanium nitride (TiN), or a carbon (C) containing material.

7. The device of claim 5 , wherein the device structure and the support structure are made of the same material.

8. The apparatus of claim 4 , wherein the exposure distance between the auxiliary region of the substrate and each optical device is constant.

9. The apparatus of claim 4 , wherein an exposed distance between the auxiliary region of the substrate and each optical device varies.

10. The device structure is made of titanium dioxide (TiO ２ ), zinc oxide (ZnO), tin dioxide (SnO ２ ), aluminum doped zinc oxide (AZO), fluorine doped tin oxide (FTO), cadmium stannate (tin oxide) (CTO), zinc stannate (tin oxide) (SnZnO ３ ), silicon nitride (Si ３ N ４ ), niobium oxide (Nb ２ O ５ 5. The apparatus of claim 4, comprising one or more of the following: silicon-containing material;

11. 1. A method for making an optical device, comprising: disposing a layer of structural material on a surface of a substrate; disposing a patterned photoresist over the layer of structural material, the patterned photoresist comprising: At least one device part; and At least one auxiliary part each device portion and each auxiliary portion exposing an unmasked portion of said layer of structural material; a width of the unmasked portion of the auxiliary portion is greater than a width of the unmasked portion of the at least one device portion, and a dimension of the auxiliary portion is greater than a dimension of the device portion; depositing a patterned photoresist; and etching the unmasked portions of the layer of structural material corresponding to each device portion and each auxiliary portion, whereby at least one optical device having said device portion; and At least one auxiliary region having said auxiliary portion is formed, etching Including, The method, wherein the device portion and the auxiliary portion have the same height.

12. The structural material layer is made of titanium dioxide (TiO ２ ), zinc oxide (ZnO), tin dioxide (SnO ２ ), aluminum doped zinc oxide (AZO), fluorine doped tin oxide (FTO), cadmium stannate (tin oxide) (CTO), zinc stannate (tin oxide) (SnZnO ３ ), silicon nitride (Si ３ N ４ 12. The method of claim 11 , comprising one or more of: amorphous silicon (a-Si) containing materials;

13. 12. The method of claim 11, wherein etching the unmasked portions comprises one or more of ion implantation, ion etching, reactive ion etching (RIE), directional RIE, plasma etching, and wet etching.

Images