System for integrated decomposition and scanning of semiconductor wafers.

Abstract

Systems and methods are described for integrated decomposition and scanning of materials, such as semiconductor wafers, including, but not limited to, a scanning nozzle including a nozzle body defining one or more nozzle ports for receiving a fluid for introduction to a surface of the material and for withdrawing the fluid from the surface of the material, and a nozzle hood extending from the nozzle body, the nozzle hood defining an inner channel longitudinally disposed along the nozzle body and further defining one or more outer channels longitudinally disposed along the nozzle body, the inner channel fluidly coupled to the one or more outer channels through one or more gaps defined by the nozzle hood.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit under 35 USC § 119(e) of U.S. Provisional Application No. 63 / 011,183, entitled "SYSTEM FOR INTEGRATED DECOMPOSITION AND SCANNING OF SEMICONDUCTOR WAFERS," filed on April 16, 2020. U.S. Provisional Application No. 63 / 011,183 is incorporated herein by reference in its entirety. [Background technology]

[0002] Inductively Coupled Plasma (ICP) spectroscopy is an analytical technique commonly used to measure trace element concentrations and isotope ratios in liquid samples. ICP spectroscopy uses an electromagnetically generated partially ionized argon plasma that reaches a temperature of approximately 7000 K. When a sample is introduced into this plasma, the high temperature causes the sample atoms to ionize or emit light. Each chemical element produces a characteristic mass or emission spectrum, so by measuring the spectrum of the emitted mass or light, the elemental composition of the original sample can be determined.

[0003] A sample introduction system may be employed to introduce a liquid sample into an ICP spectroscopy instrument (e.g., an inductively coupled plasma mass spectrometry instrument (ICP / ICP-MS), an inductively coupled plasma atomic emission spectrometry instrument (ICP-AES), etc.) for analysis. For example, the sample introduction system may deliver an aliquot of the sample to a nebulizer and convert the aliquot into a polydisperse aerosol suitable for ionization in a plasma by an ICP spectrometer. The aerosol generated in the nebulizer is sorted in a spray chamber to remove larger aerosol particles. The aerosol leaving the spray chamber is introduced into the plasma by the plasma torch assembly of the ICP-MS or ICP-AES instrument for analysis. Summary of the Invention

[0004] Systems and methods for integrated decomposition and scanning of semiconductor wafers are described, where a single chamber is utilized for decomposition and scanning of the target wafer.An embodiment of a scanning nozzle includes, but is not limited to, a nozzle body defining one or more nozzle ports for receiving fluid for introduction to a surface of a material and withdrawing fluid from the surface of the material, and a nozzle hood extending from the nozzle body, the nozzle hood defining an inner channel longitudinally disposed along the nozzle body, the nozzle hood further defining one or more outer channels longitudinally disposed along the nozzle body, the inner channel fluidly coupled to the one or more outer channels through one or more gaps defined by the nozzle.

[0005] Method embodiments include, but are not limited to, introducing a scanning fluid to a surface of the material through a nozzle, the nozzle including a nozzle body defining one or more nozzle ports for receiving fluid for introduction to the surface of the material and for withdrawing fluid from the surface of the material, and a nozzle hood extending from the nozzle body, the nozzle hood defining an inner channel longitudinally disposed along the nozzle body, the nozzle hood further defining one or more outer channels longitudinally disposed along the nozzle body, the inner channel being fluidly coupled to the one or more outer channels through one or more gaps defined by the nozzle hood, method embodiments further include directing the scanning fluid along the surface of the material through the nozzle to at least a portion of the fluid retained within at least the inner channel, and removing the scanning fluid from the surface of the material through the one or more nozzle ports.

[0006] This Summary is provided to introduce some concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter. [Brief description of the drawings]

[0007] The detailed description will be made with reference to the accompanying drawings, in which: Use of the same reference numbers in different instances in the description and drawings may indicate similar or identical parts.

[0008] [Figure 1A] FIG. 1 is an isometric view of a system for integrated decomposition and scanning of semiconductor wafers in accordance with an embodiment of the present disclosure. [Figure 1B] FIG. 1B is an isometric view of the system of FIG. 1A with a semiconductor wafer disposed in the chamber. [Figure 2A] FIG. 1B is a cross-sectional view of the system of FIG. 1A with a semiconductor wafer positioned in a scanning position. [Figure 2B] FIG. 1B is a cross-sectional view of the system of FIG. 1A with a semiconductor wafer positioned in an exploded position. [Figure 2C] FIG. 1B is a cross-sectional view of the system of FIG. 1A with a semiconductor wafer positioned in a rinsing position. [Diagram 3] FIG. 1B is an isometric view of a portion of a chamber body of the system of FIG. 1A according to an embodiment of the present disclosure. [Figure 4] FIG. 1B is an isometric view of the system of FIG. 1A having a scanning arm that positions a nozzle over a surface of a semiconductor wafer positioned at a scanning position. [Diagram 5] FIG. 1B is a partial isometric view of the system of FIG. 1A with the scanning arm positioned at a rinsing station for the nozzles. [Figure 6] 1 is a top view of a scanning arm positioned at a first position and subsequently at a second position over a semiconductor wafer during a scanning process of the semiconductor wafer according to an embodiment of the present disclosure. FIG. [Figure 7A] FIG. 2 is an isometric view of a nozzle for a semiconductor wafer disassembly and scanning system according to an embodiment of the present disclosure. [Figure 7B] FIG. 7B is a top view of the nozzle of FIG. 7A. [Figure 7C] FIG. 7B is a bottom view of the nozzle of FIG. 7A. [Figure 7D] FIG. 7D is a cross-sectional view of the nozzle of FIG. 7B taken along 7D-7D. [Figure 7E]FIG. 2 is an isometric view of a nozzle having multiple channels disposed within a nozzle hood according to an embodiment of the present disclosure. [Figure 7F] FIG. 7F is a bottom view of the nozzle of FIG. 7E. [Figure 7G] FIG. 7F is a partial bottom view of the nozzle of FIG. 7E with fluid introduced into the inner channel. [Figure 7H] FIG. 7F is a partial bottom view of the nozzle of FIG. 7E with fluid introduced into the inner and outer channels. [Figure 7I] FIG. 7F is a partial bottom view of the nozzle of FIG. 7E with fluid withdrawn from the inner and outer channels. [Figure 7J] FIG. 7F is a partial bottom view of the nozzle of FIG. 7E with fluid introduced into the inner channel from the central nozzle port. [Figure 7K] FIG. 7F is a partial bottom view of the nozzle of FIG. 7E with fluid introduced into the inner and outer channels through a central nozzle port. [Figure 7L] FIG. 7F is a partial bottom view of the nozzle of FIG. 7E with fluid withdrawn from the inner and outer channels. [Figure 8A] FIG. 1 is a partial cross-sectional view of a nozzle mount assembly for a system for integrated disassembly and scanning of semiconductor wafers in accordance with an embodiment of the present disclosure. [Figure 8B] FIG. 8B is a partial cross-sectional view of the nozzle mount assembly of FIG. 8A in contact with a surface. [Figure 8C] FIG. 8B is a partial cross-sectional view of the nozzle mount assembly of FIG. 8A lifted off a surface and leveled. [Figure 9A] FIG. 1 is a schematic diagram of a fluid handling system for a semiconductor wafer resolving and scanning system according to an embodiment of the present disclosure. [Figure 9B] FIG. 9B is a schematic diagram of the fluid processing system of FIG. 9A in a chemical blank load configuration according to an embodiment of the present disclosure. [Figure 9C] FIG. 9B is a schematic diagram of the fluid processing system of FIG. 9A in a chemical injection configuration according to an embodiment of the present disclosure. [Figure 9D]FIG. 9B is a schematic diagram of the fluid processing system of FIG. 9A in a nozzle loop loading configuration according to an embodiment of the present disclosure. [Figure 9E] FIG. 9B is a schematic diagram of the fluid processing system of FIG. 9A in a nozzle loaded configuration according to an embodiment of the present disclosure. [Figure 9F] 9B is a schematic diagram of the fluid processing system of FIG. 9A in a recovery configuration according to an embodiment of the present disclosure. [Figure 10] FIG. 1 is a schematic diagram of a nebulizer fluid handling system for a semiconductor wafer disassembly and scanning system according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] overview Measurement of trace element concentration or amount in a sample can provide an indication of the purity of the sample, or the acceptability of the sample for use as a reagent, reaction component, etc. For example, in certain production and manufacturing processes (mining, metallurgy, semiconductor manufacturing, pharmaceutical processing, etc.), the tolerance of impurities can be very stringent, e.g., on the order of parts per billion. In the case of semiconductor wafer processing, wafers are tested for impurities such as metallic impurities that may reduce the capabilities of the wafer or render the wafer inoperable due to reduced carrier lifetime, dielectric breakdown of wafer components, etc.

[0010] Vapor phase decomposition (VPD) followed by scanning of the wafer is a technique that analyzes the composition of the wafer to determine if metallic impurities are present. Conventional VPD and scanning techniques are throughput limited to facilitate the processing and scanning of silicon wafers or other material surfaces for impurity analysis. For example, many systems use separate chambers for VPD and scanning. In the VPD chamber, silicon dioxide and other metallic impurities present on the surface are removed from the surface as vapor (e.g., silicon tetrafluoride (SiF4)) by contacting the surface with vapor (e.g., hydrofluoric acid (HF), hydrogen peroxide (H2O2), or combinations of these). The processed wafer is transported to a separate chamber for scanning, where liquid droplets are introduced onto the surface of the processed wafer and the residues after reaction of the wafer with the decomposition vapors are collected. The scanning procedure involves holding the droplets on the wafer surface with a scanning head and either rotating the wafer while the scanning head moves or keeping the scanning head stationary and moving the droplets over the surface. After multiple rotations of the wafer, the droplets interact with the desired surface areas of the wafer and pull post-decomposition residues from the contacted surfaces. However, conventional wafer processing techniques require significant time and equipment to process the wafers, such as by moving the wafer from a decomposition chamber to a scanning chamber to a rinsing chamber during processing, or by using scanning nozzles that have limited droplet interaction with the wafer surface during scanning (i.e., multiple rotations of the wafer are required to allow the droplets to interact with the entire surface or a portion of it). Furthermore, such handling of wafers potentially exposes technicians or other individuals to toxic hydrofluoric acid or other hazardous chemicals, or increases the risk of environmental contamination to the wafers during transfer of the wafers between various process chambers, and also requires substantial physical process floor space to facilitate the equipment and transfer mechanisms between the equipment.

[0011] Accordingly, the present disclosure relates, at least in part, to a system and method for decomposition and scanning of semiconductor wafers, the chamber facilitating decomposition and scanning of semiconductor wafers in a single chamber footprint, the nozzle directing a flow of fluid along the surface of the semiconductor wafer between a first port and a second port of the nozzle guided by a nozzle hood defining an elongated channel to direct the flow along the wafer surface. The chamber includes a ledge defining at least two openings through which the semiconductor wafer can pass by actuation of a motor system associated with the wafer support, providing a zone for decomposition and rinsing while controlling fluid movement within the chamber, such as draining and preventing cross contamination. The motor system controls the vertical position of the wafer support relative to the chamber body to move the semiconductor within the chamber body, the motor system supporting the upward positioning of the chamber body for loading and unloading the wafer, accessing the nozzle, etc. The chamber may further incorporate a nebulizer for directing decomposition liquid aerosolized by the nebulizer directly to the surface of the semiconductor wafer while the wafer support positions the semiconductor wafer within the interior region of the chamber. The chamber can incorporate a lid that can be opened and closed relative to the chamber to isolate an interior region of the chamber from an area outside the chamber, such as during a disassembly process. The nozzle can be positioned relative to the chamber by a rotatable scanning arm, and the nozzle can be located at a location remote from the chamber to facilitate closing of the lid (e.g., during a disassembly procedure) or to facilitate rinsing of the nozzle at a rinse station. Additionally, the rotating scanning arm can position the nozzle above the semiconductor wafer during the scanning procedure. The system can utilize a fluid handling system that includes switchable selection valves and pumps to control the introduction of fluids to the nozzle, from the surface of the wafer, preparation of blanks, cleaning of system components, and the like. After or during the scanning procedure, the scanning fluid can be collected and sent to an analytical device (e.g., an ICPMS device) for analytical determination of the composition of the scanning fluid.

[0012] Working Example 1A-10 illustrate aspects of a system for integrated decomposition and scanning of semiconductor wafers ("system 100") in accordance with various embodiments of the present disclosure. System 100 generally includes a chamber 102, a scanning arm assembly 104, and a fluid handling system 106 (e.g., shown at least in part in FIGS. 9A-10) that at least facilitates the procedure of decomposition and scanning of a semiconductor wafer 108 (sometimes referred to herein as a "wafer") through the introduction of decomposition fluids to the wafer and the introduction and removal of scanning fluids to the surface of the wafer 108. Although the present disclosure provides exemplary implementations with respect to the decomposition and scanning of semiconductor wafers, the present disclosure is not limited to processes involving semiconductor wafers and may facilitate the processing of other material surfaces. The chamber 102 provides an environment for each of wafer disassembly and wafer scanning in a single chamber footprint and includes a wafer support 110 for holding a wafer 108 and a motor system 112 for controlling the vertical position of the wafer support 110 relative to the chamber 102 (e.g., in, on, etc.) to position the wafer 108 for the disassembly and scanning procedures or during other procedures of the system 100. The motor system 112 also provides rotational control of the wafer support 110 for rotating the wafer 108 during various procedures of the system 100, and provides rotational and vertical control of the scan arm assembly 104 for moving a nozzle of the scan arm assembly 104 to a position over the wafer 108 during a scanning procedure and to a rinse station 114 for nozzle cleaning. In an embodiment, the wafer support 110 includes a vacuum table for holding the wafer 108 fixedly relative to the wafer support 110, such as during movement of the wafer support 110.

[0013] The chamber 102 includes a chamber body 116 that defines an interior region 118 for receiving a wafer 108 for processing. A ledge 120 protrudes into the interior region 118 between a top 122 of the chamber body 116 and a bottom 124 of the chamber body 116. In an embodiment, the chamber body 116 defines a first opening 126 in the top 122 through which the wafer 108 can be received into the interior region 118. In an embodiment, the ledge 120 defines a second opening 128 in an intermediate portion of the interior region 118 between the top 122 and the bottom 124 (e.g., between the first opening 126 and the bottom 124). During the exemplary operation shown in FIG. 1A, the system 100 can select a wafer 108 from a front-end unified pod (FOUP) or other location and receive a semiconductor wafer 108 on the wafer support 110 through the operation of the automated arm 50 that introduces the selected wafer 108 onto the wafer support 110 (e.g., at the center of the wafer support 110). The motor system 112 can position the wafer support 110 at, on, or adjacent to the top 122 of the chamber body 116 to allow the automated arm 50 to access the wafer support 110 to place the wafer 108 on the wafer support 110. For example, the wafer support 110 can be positioned at a first position (e.g., shown in FIG. 2A) adjacent a first opening 126 during loading of the wafer 108. In an embodiment, the first position of the wafer support 110 is positioned outside of the interior region 118 (e.g., extended through the first opening 126) to receive the wafer 108.

[0014] The system 100 can include a lid 130 for isolating the interior region 118 from the exterior region 132 to facilitate disassembly of the wafer while limiting exposure of decomposition liquids to the exterior region 132. For example, the lid 130 can be sized and shaped to cover the first opening 126 when positioned over the first opening 126. The lid 130 is positionable between an open position (e.g., shown in FIG. 1A) and a closed position (e.g., shown in FIG. 1B). The open position can be utilized during wafer loading to provide access to an automated arm, during a scanning procedure, during a wafer unloading procedure, etc. In an embodiment, the lid 130 is in the open position when the wafer support 110 is in a first position adjacent the first opening 126 to provide access to the wafer 108 by a nozzle of the scanning arm assembly 104. The closed position can be utilized during a wafer disassembly procedure to prevent decomposition liquids from exiting the chamber 102 through the first opening 126. In an embodiment, at least a portion of the lid 130 contacts the chamber body 116 to isolate the interior region 118 from the exterior region 132. The wafer 108 is moved to a second position within the interior region 118 through control of the vertical position of the wafer support 110 by the motor system 112. For example, the motor system 112 moves the wafer support 110 to the second position within the interior region 118 before or during movement of the lid 130 from the open position to the closed position. In an embodiment, the lid 130 is disposed adjacent the chamber body 116 and rotatably coupled to a mount 134 via a lid arm 136 to transition the lid 130 between the open and closed positions.

[0015] Following introduction of the wafer 108 to the wafer support 110, the system 100 can be transitioned to a disintegration configuration to facilitate disintegration of one or more surfaces or edges of the wafer 108. For example, the motor system 112 moves the wafer support 110 from a first position to a second position to position the wafer 108 adjacent the second opening 128 of the ledge 120 (e.g., as shown in Figs. IB and 2B). In an embodiment, the chamber 102 includes a nebulizer 138 disposed between the first opening 126 and the second opening 128 to spray a disintegration fluid onto the surface of the wafer 108 when the wafer support 110 is positioned by the motor system 112 in the second position. As such, the disintegration fluid is sprayed directly into the chamber 102 by the nebulizer 138. The disintegration fluid can be supplied from the fluid handling system 106 via one or more fluid lines, for example, via a conduit 140, to a prechamber 142 housing at least a portion of the nebulizer 138. In an embodiment, at least a portion of the nebulizer 138 is at least partially disposed within a wall of the chamber 102. For example, the chamber body 116 can define an opening 144 between the interior region 118 and the antechamber 142, where an outlet of the nebulizer 138 can discharge aerosolized decomposition fluid into the interior region between the first opening 126 and the second opening 128 for covering and decomposing at least a surface 146 of the wafer 108.

[0016] In an embodiment, the chamber 102 induces pressure beneath the wafer 108 during decomposition to prevent the passage of decomposition liquid between the edge of the wafer 108 and the ledge 120. For example, the chamber 102 can include a gas outlet port 148 in the interior region 118 located between the second opening 128 and the bottom 124 of the chamber body 116 for introducing gas or other fluid into the interior region 118 during introduction of decomposition fluid from the nebulizer 138 to the interior region 118. The gas from the gas outlet port 148 can be introduced at a pressure greater than the pressure of the aerosolized decomposition fluid provided from the nebulizer 138 to provide an upward flow of gas through the second opening 128 (e.g., between the edge of the wafer 108 and the ledge 120) to prevent the passage of the decomposition fluid beneath the wafer 108. In an embodiment, the system 100 includes a controller coupled to a gas source for introducing gas from the gas source to a gas outlet port 148 during introduction of decomposition fluid to a surface 146 of the wafer 108 by the nebulizer 138 when the wafer support 110 is disposed in the second position. For example, the gas can be supplied to the gas outlet port 148 via a fluid line through the conduit 140 and the antechamber 142. In an embodiment, the motor system 112 induces rotation of the wafer support 110 during the decomposition procedure to rotate the wafer 108 when aerosolized decomposition fluid is present in the interior region 118.

[0017] The chamber 102 can facilitate removal of fluids from the interior region 118 via one or more channels in the chamber body 116 that are in fluid communication with one or more drains; such fluids can include, for example, excess decomposition liquid, silicon tetrafluoride (SiF4), gas provided by the gas outlet port 148, water, water vapor, rinsing liquid, or other fluids. For example, the chamber body 116 can include a base portion 200, a middle portion 202, and a top portion 204 (e.g., as shown in FIG. 2B) stacked on top of one another (e.g., via interlocking grooves). The base portion 200 can define one or more drains 206 (e.g., drains 206A and 206B) that provide an outlet from the interior region 118 of the chamber 102 to one or more drain receptacles (not shown) via drain conduits. In an embodiment, the drain 206A is fluidly coupled to a channel in the chamber body 116 to provide access to the drain 206A for fluids located between the first opening 126 and the second opening 128. For example, the middle portion 202 can define one or more channels 208, at least a portion of which extends through the middle portion and is vertically aligned with at least a portion of the one or more channels 210 formed by the base portion 200. The channels 208 can be disposed between an inner surface 212 of the chamber body 116 (e.g., of the top 204, the middle portion 202, or a combination thereof) and the ledge 120 to allow fluid retained in the interior region 118 between the lid 130 and the second opening 128 or the surface 146 of the wafer 108 to flow into the channels 208, into the channels 210, and out the drain 206A. In an embodiment, the drain 206B allows a rinse liquid or other fluid to exit the interior region 118 during a rinsing procedure (described herein in connection with FIG. 2C).

[0018] Following disassembly of the wafer 108, the system 100 can be transitioned to a scanning configuration that allows the scanning arm assembly 104 to access the surface 146 of the wafer 108 without transferring the wafer 108 to a separate scanning system. To transition to the scanning configuration, the motor system 112 can position the wafer support 110 from a second position adjacent the second opening 128 to a first position adjacent the first opening 126, or otherwise closer to the top 122 of the chamber body 116, to allow the scanning arm assembly 104 to access the surface 146 of the wafer 108. The scanning arm assembly 104 generally includes a rotatable arm support 300 coupled to a nozzle housing 302 that supports a nozzle 304 configured to introduce a scanning fluid to and withdraw a scanning fluid from the surface 146 of the wafer 108. The motor system 112 can control the rotation of the rotatable arm support 300, the vertical positioning of the rotatable arm support 300, or a combination thereof to position the nozzle housing 302 and nozzle 304 from one or more positions at the rinse station 114 (e.g., shown in FIG. 2A) to one or more positions adjacent to or above the wafer 108 (e.g., shown in FIG. 4). Exemplary implementations of the nozzle 304 are further described herein with reference to FIGS. 7A-7L. In an embodiment, the rotatable arm support 300 rotates or otherwise moves the nozzle 304 to position the nozzle 304 adjacent to the wafer 108 when the wafer support 110 is positioned in a first position by the motor system 112, and to position the nozzle 304 out of a path from the open position to the closed position of the lid 130 when the wafer support 110 is positioned in a second position by the motor system 112.

[0019] With the nozzle 304 positioned adjacent to or above the wafer 108 (e.g., as shown in FIG. 4), the fluid processing system 106 can control the introduction of a scanning fluid to and from the nozzle 304 to facilitate a scanning procedure of the surface 146 of the wafer 108. With reference to FIGS. 7A-7D, an exemplary embodiment of the nozzle 304 is shown. The nozzle 304 is configured to deliver a stream of fluid across the surface 146 of the wafer 108, which can cover a larger surface area of ​​the wafer 108 in a shorter time than moving spot-sized droplets onto the wafer 108. The stream of fluid is directed by the nozzle 304 onto the surface 146 of the wafer 108 to controllably scan a desired surface area of ​​the wafer 108. In an embodiment, the nozzle 304 directs the stream of fluid substantially across the entire surface 146 in one rotation of the wafer 108. In an embodiment, a wedge of the surface 146 (e.g., a sector of the wafer 108 or a portion thereof) can be scanned in a portion of one rotation of the wafer 108. The nozzle 304 includes a nozzle body 500 that defines an inlet port 502, an outlet port 504, a first nozzle port 506, a second nozzle port 508, and a nozzle hood 510. The nozzle 304 may also include one or more mounting openings for mounting the nozzle 304 within the nozzle housing 302. The inlet port 502 and the outlet port 504 receive fluid lines for directing the flow of fluid to and from the nozzle 304 during operation of the system 100. For example, the nozzle 304 receives fluid by the action of a first pump (e.g., a syringe pump) that pushes fluid from a holding line or loop (e.g., a sample holding loop) to the nozzle 304, where the fluid is directed to the inlet port 502 and passes through a channel 503 in the nozzle body 500 that fluidly connects the inlet port 502 and the first nozzle port 506. The fluid is then deposited on the surface 146 of the wafer 108 through the first nozzle port 506. The fluid is directed along the surface 146 of the wafer 108 in a continuous fluid stream through a channel 512 defined between the nozzle hood 510 and the nozzle body 500 , after which the fluid is removed from the surface 146 of the wafer 108 .For example, fluid can be removed from the surface 146 through the action of a second pump (e.g., a syringe pump) pulling fluid through a second nozzle port 508 at the end of the channel 512 distal from the first nozzle port 506 through fluid communication between the outlet port 504 and the second nozzle port 508 via the nozzle body 500. In this manner, the fluid is allowed to contact the wafer 108 during movement from the first nozzle port 506 to the second nozzle port 508. The channel 512 allows a volume of fluid to move over the wafer while being assisted by the nozzle hood 510. In an embodiment, the channel 512 has a volume of about 300 μL. However, the volume of the channel 512 is not limited to 300 μL and can include volumes less than 300 μL and volumes greater than 300 μL. For example, the volume of the channel 512 can provide a desired amount of fluid (e.g., scanning fluid) to the surface 146 depending on the size of the wafer 108 to be processed by the system 100. The length of the channel 512 can be selected based on the size of the wafer 108 to be processed by the system 100, and in an embodiment, the channel 512 has a length of approximately the radius of the wafer 108. In an embodiment, the length of the channel 512 can be from about 20 mm to about 500 mm. For example, the length of the channel 512 can be about 150 mm (e.g., to accommodate a 300 mm diameter wafer), about 100 mm (e.g., to accommodate a 200 mm diameter wafer), or about 225 mm (e.g., to accommodate a 450 mm diameter wafer).

[0020] The nozzle hood 510 extends from the nozzle body 500 adjacent each of the first nozzle port 506 and the second nozzle port 508, defining a channel 512 between the nozzle hood 510 and the nozzle body 500 between the first nozzle port 506 and the second nozzle port 508. The nozzle hood 510 can extend further to include each of the first nozzle port 506 and the second nozzle port 508 within the channel 512 such that the nozzle hood 510 surrounds the first nozzle port 506 and the second nozzle port 508 within the nozzle hood 510 (e.g., as shown in FIG. 7C). In an embodiment, the nozzle body 500 includes substantially opposing sidewalls 514 that traverse the nozzle 304. The opposing sidewalls 514 each include a tapered wall portion 516 that is joined or otherwise extends to provide an opposing portion 518. In an embodiment, the facing portion 518 is substantially vertical to form at least a portion of the nozzle hood 510. The nozzle 304 can be formed from a single integral piece, or portions of the nozzle 304 can be formed separately and fused or otherwise joined together. In an embodiment, the nozzle 304 is formed from chlorotrifluoroethylene (CTFE), polytetrafluoroethylene (PTFE), or a combination thereof.

[0021] The channel 512 of the nozzle 304 has an elongated shape with rounded ends 513A, 513B. The rounded ends can promote superior fluid handling properties compared to angled ends, such as by providing a more consistent delivery and uptake of fluid through the nozzle 304. In an embodiment, the first nozzle port 506 (where fluid is dispensed from the nozzle 304 to the wafer 108) is positioned to abut the edge of the rounded end 513A of the channel 512. Such positioning can aid in a clean cut-off of the fluid flow from the first nozzle port 506 once all of the fluid is introduced to the wafer 108, while avoiding segmentation of the fluid on the surface of the wafer 108. In an embodiment, the rotatable arm support 300 rotates the nozzle housing 302 to extend the rounded end 513A of the nozzle 304 over the edge of the wafer 108 (e.g., following a scanning procedure) to facilitate uptake of fluid flow through the second nozzle port 508 via operation of the fluid processing system 106. For example, as shown in FIG. 6, the nozzle is positioned at a first position (e.g., a scanning position) at a first time (t1) such that the channel 512 is positioned above the surface 146. The rotatable arm support 300 then rotates the nozzle housing 302 at a second time (t2) such that the rounded end 513A extends beyond (e.g., over) the edge of the wafer 108 at a second position rotated approximately 7 degrees from the first position. In an embodiment, the second nozzle port 508 is positioned approximately in the center of the rounded end 513B distal from the first nozzle port 506. Locating the second nozzle port 508 at the center of the rounded end 513B, as opposed to abutting the edge of the rounded end 513B, can facilitate fluid intake while maintaining the fluid flow over the surface 146 without partitioning to precisely control fluid movement over the surface 146 of the wafer 108.

[0022] In an embodiment, the nozzle hood 510 defines a plurality of channels to direct the flow of fluid across the surface 146 of the wafer 108. For example, referring to Figures 7E-7L, the nozzle 304 is shown with the nozzle hood 510 defining an inner channel 700 disposed longitudinally along the nozzle body 500 and one or more outer channels (channels 702, 704 are shown). The nozzle hood 510 is shown having a first hood portion 706 and a second hood portion 708 disposed within the nozzle hood 510 formed by the first hood portion 706. The inner channel 700 is defined by an interior area enclosed by the second hood portion 708, and the outer channel 702 is defined by an area enclosed between the first hood portion 706 and the second hood portion 708. The first nozzle port 506 and the second nozzle port 508 are disposed within an interior area surrounded by a second hood portion 708 at a first end 710 of the nozzle hood 510 and a second end 712 of the nozzle hood 510, respectively.

[0023] The nozzle 304 can direct fluid from the inner channel 700 to the outer channels 702, 704 during introduction of fluid from the nozzle 304 to the wafer 108, and from the outer channels 702, 704 to the inner channel 700 during uptake of fluid from the wafer 108 to the nozzle 304. For example, the nozzle hood 510 includes a gap 714 at the second end 712 to fluidly connect the inner channel 700 and the outer channels 702, 704. In an embodiment, the gap 714 is defined by an opening in the second hood portion 708 between the location of the second nozzle port 508 at the second end 712 of the nozzle hood 510 and the first hood portion 706 to allow passage of fluid between the first inner channel 700 and the outer channels 702, 704 while maintaining and containing the fluid in a fluid configuration on the surface 146 of the wafer 108 within the nozzle hood 510. For example, the second end 712 is typically located at or adjacent to the center of the wafer 108 which limits the tangential force applied to the fluid, which helps maintain a continuous fluid flow within the nozzle 304 as opposed to breaking up the fluid flow and having uncontrolled liquid on the wafer 108 outside the nozzle hood 510. Additionally or alternatively, the nozzle 304 may include the gap 714 or additional gaps at different locations of the second hood portion 708.

[0024] 7G-7I, an exemplary flow path is shown in which fluid is introduced into the inner channel 700 via the first nozzle port 506. The fluid flows along the surface 146 of the wafer 108 in the inner channel 700 until it reaches the gap 714. The fluid can then flow through the gap 714 along the surface 146 to each of the outer channels 702, 704. The first hood portion 706 and the second hood portion 708 direct the fluid in the outer channels 702, 704 back towards the first end 710 of the nozzle hood 510. The amount of fluid introduced into the first nozzle port 506 and the height of the first nozzle port 506 above the surface 146 of the wafer 108 will determine whether there is enough fluid to pass into the outer channels 702, 704, whether the fluid is maintained entirely within the inner channel 700, or how far along the outer channels 702, 704 the fluid passes if there is enough fluid. In an embodiment, the outer channels 702, 704 provide a motion buffer for the height of the nozzle 304 above the wafer 108, or for variations in the height of the nozzle 304 above the wafer 108, during rotation of the wafer 108 relative to the nozzle 304. In an exemplary embodiment, the nozzle 304 can vary for a height difference between the nozzle 304 and the surface 146 from about 0.2 mm to about 0.8 mm (e.g., for a sample volume from about 250 μL to about 550 μL). The outer channels 702, 704 can vary the volume of fluid retained between the inner channel 700 and the surface 146 (e.g., by the outer channels 702, 704 absorbing or releasing liquid as needed) while keeping the fluid flow in tension and maintaining a continuous flow of liquid across the nozzle 304. Fluid withdrawal is shown in the exemplary embodiment of FIG. 7I. Fluid retained in the outer channels 702, 704 is withdrawn along with the flow of fluid retained in the inner channel 700. For example, because the fluid is maintained as a continuous liquid flow between the inner channel 700 and the outer channels 702, 704, the fluid can be collected through a single port (shown in FIG. 7I as the second nozzle port 508, but which could alternatively be the first nozzle port 506 or another nozzle port such as a central nozzle port).

[0025] In an embodiment, the nozzle 304 may include one or more additional or alternative fluid ports for introducing fluid to or removing fluid from the surface 146. For example, the nozzle 304 may include a third nozzle port 716 disposed within the inner channel 700 between the first end 710 and the second end 712 of the nozzle hood 510. The third nozzle port 716 may be fluidly connected to one or more inlet or outlet ports defined by the nozzle body 500, for example, via one or more channels through the nozzle body 500. In an embodiment, the third nozzle port 716 is disposed at an approximately central location along the length of the inner channel 700 (e.g., as shown in FIG. 7J) such that fluid travels simultaneously toward the first end 710 and the second end 712 within the inner channel 700 during a filling operation of the nozzle 304. Once fluid fills the inner channel 700 from fluid supplied through the third nozzle port 716, fluid can pass through the gap 714 to fill at least a portion of the outer channels 702, 704 (e.g., as shown in FIG. 7K). Withdrawal of the fluid can then occur by withdrawing the fluid through a withdrawal port (e.g., the first nozzle port 506, the second nozzle port 714 - shown in FIG. 7L, the third nozzle port 716, another port, etc.) as described herein.

[0026] The position of the nozzle 304 above the surface 416 of the wafer 108 may affect the amount of fluid supported in the channel 512 during the scanning procedure. The system 100 may include a zeroing procedure to ensure that a desired height above the surface 416 is achieved prior to introduction of the scanning fluid to the nozzle to facilitate a desired amount of fluid being guided by the nozzle hood 510 along the surface 146 of the wafer 108. An exemplary zeroing procedure is illustrated in FIGS. 8A-8C, in which a side view of the scanning arm assembly 104 is shown in accordance with various embodiments of the present disclosure. The scanning arm assembly 104 facilitates alignment of the nozzle 304 with respect to the wafer 108 such that the first nozzle port 506 and the second nozzle port 508 are horizontal with respect to the surface 146 of the wafer 108 where fluid is to be applied and removed. The system 100 may undergo an alignment or leveling procedure as necessary to ensure that the nozzle 304 is level with respect to the wafer 108 held by the chamber 102, such as for each wafer 108 processed by the system 100 (e.g., between the scanning of a first wafer removed from the chamber 102 and the scanning of a second wafer introduced into the chamber 102) or before the next scanning procedure. Generally, the nozzle 304 is movably coupled to the nozzle housing 302 to allow the nozzle 304 to have a range of motion relative to the nozzle housing 302 while supported by the nozzle housing 302. The nozzle housing 302 defines an opening 520 through which at least a portion of the nozzle 304 may pass when transitioning between an extended position (e.g., shown in FIG. 8A) and a retracted position (e.g., shown in FIGS. 8B, 8C). For example, the top of nozzle 304 may be positioned within nozzle housing 302, where an additional portion of nozzle 304 may be introduced into the interior of nozzle housing 302 through opening 520 as nozzle 304 transitions from an extended position to a retracted position. For example, when nozzle 304 is positioned to contact zeroing surface 522, nozzle hood 128 may contact surface 522 to force nozzle 304 into a horizontal position relative to surface 522.The nozzle housing 302 can then be actuated to lock the position of the nozzle 304 in place to keep the nozzle 304 horizontal with respect to the surface 522 when the nozzle 304 is lifted off the surface 522 (e.g., to a scanning position). The nozzle housing 302 can include a mechanical, electrical, or electromechanical locking device for releasably securing the nozzle 304 to the nozzle housing 302. In an embodiment, the surface 522 includes the surface 146 of the wafer 108, the surface of the wafer support 110 (e.g., prior to loading the wafer 108 on the wafer support 110), the surface of the rinse station 114, or another surface having a structure that matches the level characteristics of a semiconductor wafer, and when the nozzle 304 contacts the surface 522, the nozzle hood 128, the first nozzle port 506, the second nozzle port 508, etc. are properly positioned with respect to the wafer 108.

[0027] In an embodiment, the nozzle mount assembly 500 includes a nozzle housing 302 for coupling the nozzle 304 to the rotatable arm support 300. The nozzle 304 may be coupled to the nozzle housing 302 via a coupler 524 that defines an opening 526 for interacting with a protrusion 528 of the nozzle housing 302. The protrusion 528 may include a fastener, pin, or other structure having a width or diameter less than the width or diameter of the opening 526 such that when the scanning arm assembly 104 is in a first state (e.g., a leveling state), a top of the opening 526 rests on the protrusion 528, providing a lowered or extended position of the nozzle 304 relative to the nozzle housing 302 via the coupler 524 (e.g., as shown in FIG. 8A). The system 100 may perform an alignment or leveling procedure by lowering the nozzle housing 302 on the rotatable arm support 300 to bring the nozzle 304 into contact with the surface 522 (e.g., as shown in FIG. 8B). For example, when the nozzle 304 contacts the surface 522, the coupler 524 is pushed upward against the protrusion 528 such that the protrusion 528 does not support the coupler 524 via contact with the top of the opening 526. Following contact of the nozzle 304 with the surface 522, the nozzle 304 is in a retracted position and the system 100 can actuate a locking structure 530 (e.g., integrated within the nozzle housing 302) to secure the position of the nozzle 304 relative to the nozzle housing 302. For example, the coupler 524 can include a ferrous material such that it is secured by a magnetic field generated by an electromagnet incorporated into the locking structure 530. In the exemplary embodiment, an electromagnet is shown as part of the locking structure 530, however, other locking structures can be utilized including, but not limited to, a pneumatic solenoid actuator, a mechanical lock, an electromechanical lock, etc.

[0028] The nozzle housing 302 may include a sensor for monitoring the position of the nozzle 304 relative to the nozzle housing 302 to determine whether the nozzle 304 is in an extended state, a retracted state, or a different position. For example, in an embodiment, the nozzle housing 302 includes a sensor 532 for detecting the presence or absence of the coupler 524 and generating or degenerating a signal that is received by a controller of the system 100. The sensor 532 may include an optical switch with a light source on a first side of the coupler 524 and a detector on a second, opposing side of the coupler 524. The coupler 524 may include an index cutout, a portion of which passes between the light source and the detector of the sensor 532. When the nozzle 304 is in the extended position (e.g., the locking structure 530 is not engaged), light from the light source passes through the index cutout of the coupler 524 and is detected by a detector on the other side of the coupler 524. The sensor 532 will then output a signal indicating detection of light or will stop outputting a signal, thereby indicating to the system 100 that the nozzle 304 is in the extended position. When the nozzle 304 is in a retracted position, such as after being leveled on the surface 522, the body of the coupler 524 is disposed between the light source and detector of the sensor 532, blocking light from reaching the detector. The sensor 532 will output a signal indicating that it does not detect the light source or will stop outputting a signal. Such a signal or lack thereof indicates to the system 100 that the nozzle 304 is in a retracted position (e.g., supported by the locking structure 530 to the nozzle housing 302). Operation of the sensor 532 can provide a system check to ensure that the nozzle 304 is still in the retracted and leveled position after a period of operation. A change in the output from the sensor 532 can indicate that a releveling procedure may be appropriate, that the locking structure 530 should be evaluated, etc. Alternatively, the index cutout can be repositioned so that when the nozzle 304 is in the retracted position, the detector aligns with the index cutout, and when the nozzle 304 is in the extended position, the body of the coupler 524 blocks the light.

[0029] Once the nozzle 304 has been leveled against the surface 522 and locked in place via the locking structure 530, the rotatable arm support 300 may lift the nozzle 304 off the surface 522 (e.g., as shown in FIG. 8C ) while maintaining the nozzle 304 in the leveled position. The rotatable arm support 300 may then place the nozzle 304 in a scanning position or otherwise move the nozzle 304 (e.g., to allow the wafer 108 to be placed on the wafer support 110, if the surface 522 used to level the nozzle 304 is the wafer support 110).

[0030] The nozzle housing 302 may include one or more sensors to facilitate the introduction and removal of fluid into and from the nozzle 304. For example, in an embodiment, the nozzle housing 302 includes one or more sensors (sensors 534A, 534B are shown) adjacent one or more of the inlet port 502 and outlet port 504 of the nozzle 304 to control the operation of the fluid processing system 106 to control the flow of fluid into and out of the nozzle 304. The sensors 534A, 534B may include optical sensors, capacitance sensors, ultrasonic sensors, or other sensors, or combinations thereof, to sense the flow of liquid or its absence in the fluid lines of the system 100. For example, the system 100 includes fluid lines from the fluid processing system coupled to fluid line couplers 536A, 536B through which the sensors 534A, 534B, respectively, may detect the presence or absence of fluid therein. The output signal, or lack thereof, may control the operation of one or more components of the fluid processing system 106, including, but not limited to, a pump utilized to introduce fluid to or remove fluid from the nozzles 304.

[0031] The system 100 facilitates a rinse procedure for the wafer 108 and for the nozzle 304, such as following the scan procedure. With reference to FIG. 2C, the chamber 102 is shown in a rinse configuration to facilitate rinsing of the wafer 108. To transition to the rinse configuration, the motor system 112 can position the wafer support 110 from a first position adjacent the first opening 126 (e.g., a scan position) or other position to a rinse position between the ledge 120 and the bottom 124 of the chamber body 116. A rinse fluid is introduced to the wafer 108 provided in the system 100, such as through a rinse port on the nozzle housing 302, whereby the motor system 112 can rotate the wafer 108 to induce removal of the rinse fluid. The rinse fluid can then strike the interior of the chamber body 116 and flow to the drain 206B to leave the interior region 118 of the chamber 102. To clean the nozzle 304, the rotatable arm support 300 can position the nozzle 304 relative to one or more troughs of the rinsing station 114. For example, the rinsing station 114 can include a first trough 115A (e.g., shown in FIG. 5) having an elongated channel through which rinsing fluid is introduced from a rinsing fluid source to interact with the nozzle hood 510, the channel 512, or other portions of the nozzle 304. The nozzle 304 is shown positioned in the first trough 115A in FIGS. 1A, 1B. The rinsing station 114 can also include a second trough 115B having an elongated channel coupled with a drying gas source (e.g., nitrogen or other inert gas) to introduce drying gas into the elongated channel for impingement against the nozzle 304. In FIG. 5, the nozzle 304 is shown positioned in the second trough 115B.

[0032] 9A-10, an exemplary fluid handling system 106 of system 100 is described in accordance with various embodiments of the present disclosure. For example, fluid handling system 106 can facilitate preparation of chemical blanks utilized by system 100 for analysis by the analytical system, can facilitate preparation of decomposition fluids on demand and according to desired ratios for use in chamber 102, can facilitate preparation of scanning fluids on demand and according to desired ratios for use in chamber 102, and combinations thereof. As shown, fluid handling system 106 includes a pumping system including pumps 600, 602, 604, 606, 608, 610, and 612, and draws and pushes fluids through the fluid handling system to interact with other components of system 100 (e.g., nozzle 304), the analytical system, etc. Although the pumping system is shown incorporating a syringe pump, system 100 can utilize different pump types or systems, combinations of pump types or systems, etc. 10 to introduce a decomposition fluid to a nebulizer 138 of a chamber 102 during a decomposition procedure of a wafer 108. A pump 612 can draw hydrofluoric acid (HF) or other decomposition fluid from a decomposition fluid source 613 into a holding line (e.g., a decomposition fluid holding loop 614) having a valve 616 in a first configuration and a valve 618 in a first configuration. In a second configuration of the valve 616, gas from a gas source 619 can be introduced into the fluid line holding the decomposition fluid to provide a barrier between the working fluid used to push the decomposition fluid to the nebulizer 138. In the second configuration of valve 618, pump 612 can draw hydraulic fluid (e.g., deionized water or other fluid) such that valve 618 is switched to the first position and valve 616 is switched to the third configuration to provide fluid communication between pump 612 and nebulizer 138 such that pump 612 pushes the hydraulic fluid against the decomposition fluid held in decomposition fluid valve holding loop 614 (e.g., through any intermediate gaps) and introduces the decomposition fluid into nebulizer 138.Following disintegration of the wafer 108, the system 100 can scan the wafer 108 for a determination of impurities.

[0033] 9A, the fluid processing system 106 is shown in an exemplary chemical loading configuration. Pumps 604, 606, and 608 draw chemicals from chemical sources 620, 622, and 624, respectively, through valve 626 in a first valve configuration. The chemicals may include, for example, hydrofluoric acid (HF), hydrogen peroxide (H2O2), deionized water (DIW), or other fluids. In a second valve configuration of valve 626 (shown in FIG. 9A), each of pumps 604, 606, and 608 is fluidly coupled to a fluid line connector (e.g., manifold 628 or other connector) such that the chemicals drawn by each pump are combined and allowed to mix. The combined fluid is directed to valve 630, which in the first valve configuration directs the combined fluid to a holding line (e.g., holding loop 632). In an embodiment, the system controller independently controls the operation of each of the pumps 604, 606, and 608 to control the flow rate of each fluid handled by the respective pump, thereby providing a controlled composition of the mixed fluid directed to the holding loop 632 after mixing. In an embodiment, a first fluid mixture may be used to interact with the wafer 108 during a first scanning procedure, and a second fluid mixture may be prepared on demand with different operational control of the pump systems 604, 606, and 608 to introduce the second fluid mixture to interact with the wafer 108 during a second scanning procedure. Additional fluid mixtures may be prepared on demand and introduced to the wafer 108 as desired. In an embodiment, the holding loop 632 has a volume that supports multiple wafer scanning procedures without the need to be replenished. For example, a scanning solution may be prepared, where a portion of the scanning solution (e.g., a "blank 1" sample) may be sent to the analysis system to verify that the solution is within the operational constraints for use on the wafer. The remainder of the scanning solution in the holding loop 632 can then be used for multiple scanning procedures, with the scanning solution previously verified as suitable for use. An example of the loading of a chemical blank for analysis is shown with reference to FIG. 9B.

[0034] 9B, the fluid processing system 106 shows an exemplary nozzle bypass configuration for sending a chemical blank for analysis without passing the blank through the nozzle 304. In the nozzle bypass configuration, the pump 610 is in fluid communication with the holding loop 632 (e.g., with the valve 630 of the second valve configuration) and pushes the fluid held in the holding loop 632 through the valve 636 of the first valve configuration and the valve 638 of the first valve configuration to the sample holding line (e.g., the sample holding loop 634). Once the fluid is isolated in the sample holding loop 634, the fluid processing system 106 can switch configuration to the sample injection configuration to transfer the sample to the analytical system for analysis. The analytical system can include, but is not limited to, an inductively coupled plasma spectroscopy instrument for trace element composition determination.

[0035] 9C, the fluid processing system 106 is shown in an exemplary chemical injection configuration whereby the holding loop 632 is in fluid communication with one or more transfer mechanisms. For example, in an embodiment, the valve 638 is in a second configuration (shown in dashed lines in FIG. 9C) for fluidly connecting the holding loop 632 to a gas transfer source (e.g., nitrogen pressure source 640) to push the sample held in the holding loop 632 through valve 644 in the first valve configuration and valve 646 in the first valve configuration to a transfer line 642 to a sample analysis system. In an embodiment, the valve 638 is in a third valve configuration (shown in FIG. 9D) fluidly coupled to the pump 602 through valve 648 in the first valve configuration (shown in solid lines in FIG. 9C) to push the sample held in the holding loop 632 through valve 644 in the first valve configuration and valve 646 in the first valve configuration to a transfer line 642 to a sample analysis system. The pump 602 pushes the sample against the transfer line 642 with a working solution (e.g., deionized water source 650 from DIW). In an embodiment, the fluid processing system 106 introduces a fluid gap between the working solution and the sample, such as by introducing air bubbles (e.g., from nitrogen pressure source 640) into the holding loop 632 prior to pushing the working solution. In an embodiment, the fluid processing system 106 includes a sensor 652 adjacent the transfer line 642 to detect the presence or absence of fluid in the transfer line 642. For example, the sensor 652 can detect the trailing end of the sample pushed out of the holding loop 632 (e.g., by detecting air bubbles in the line), where the sensor signal or lack thereof can inform the controller of the fluid processing system 106 to switch the configuration of the valves 646, 648 to a second valve configuration (shown in dashed lines in FIG. 9C ) to fluidly connect the pump 602 with the transfer line 642 via the fluid line 654. In such a configuration, other parts of the fluid handling system 106 are isolated from the transfer of sample to the sample analyzer, allowing rinsing of those other parts during sample transfer.

[0036] 9D, fluid handling system 106 is shown in an exemplary nozzle loop loaded configuration whereby retention loop 632 is in fluid communication with a nozzle retention line (e.g., nozzle retention loop 656) to prepare for introducing fluid to nozzle 304. In the nozzle loop loaded configuration, pump 610 is in fluid communication with retention loop 632 (e.g., with valve 630 in the second valve configuration) and pushes fluid retained in retention loop 632 through valve 636 in the second valve configuration and valve 658 in the first valve configuration into nozzle retention loop 632. In an embodiment, nozzle retention loop 632 has a volume of about 500 μL, while retention loop 632 has a volume of about 5-20 mL to allow filling of nozzle retention loop 632 for each preparation of scanning solution through operation of pumps 604, 606, 608. Once the fluid is isolated within the nozzle holding loop 656, the fluid processing system 106 can be switched to a nozzle loaded configuration to transfer fluid to the nozzle 304 for a scanning procedure of the wafer 108 or to take a nozzle blank sample (e.g., introducing fluid to an inert surface, such as the surface of the rinse station 114, and removing a sample from the inert surface for analysis).

[0037] 9E, the fluid processing system 106 is shown in an exemplary nozzle load configuration whereby the pump 600 is in fluid communication with the nozzle holding loop 656 and the nozzle 304 via the valve 658 in a second valve configuration to push fluid from the nozzle holding loop 656 to the nozzle 304. In an embodiment, during a scanning procedure, the wafer 108 is held stationary while the nozzle 304 is loaded by the pump 600. In an embodiment, the system 100 performs a zeroing operation (e.g., as described with reference to FIGS. 8A-8C) of the nozzle 304 before filling the nozzle 304 with fluid. The nozzle is then placed in a scanning position over the wafer 108 and the pump 600 can be operated to push fluid from the nozzle holding loop 656 to the inlet port 506 of the nozzle 304, through the nozzle body 500 to the first nozzle port 506, and onto the surface 146 of the wafer 108 (or onto an inert surface for nozzle blank analysis). In an embodiment, the controller of the fluid processing system 106 controls the operation of the pump 600 based on a sensing signal, or lack thereof, from sensors 534A and 534B that detect the presence or absence of fluid being introduced into or exiting the nozzle 304, indicating a filled nozzle 304. In an embodiment, detection of the leading end of the fluid by sensor 534A causes the pump 600 to decrease the flow rate of the fluid being introduced into the nozzle 304 (e.g., from a flow rate of about 50 μL / min to a flow rate of 10-20 μL / min). In an embodiment, the pump 600 operates to fill the nozzle 304 until the trailing end of the fluid is registered by sensor 534B. The pump 600 then operates for a period of time to push the trailing end of the fluid into the nozzle 304, and then ceases operation, thereby allowing all of the fluid previously held by the nozzle holding loop 656 to be placed on the surface 146 of the wafer 108 (or an inert surface if a nozzle blank is being performed). The fluid is then supported on the surface 146 by the nozzle 304. In an embodiment, a portion of the fluid may protrude from the nozzle hood 510 but may remain in contact with the remainder of the fluid in the channel 512, such as by adhesion forces. The system 100 then moves to scanning the nozzle 304 over the surface 146 of the wafer 108.During the scanning procedure, the motor system 112 rotates the wafer 108 (e.g., at about 2 rpm), whereby the fluid supported by the nozzle 304 is transferred onto the surface 146 of the wafer 108. In an embodiment, the fluid interacts with substantially the entire surface 146 of the wafer 108 in one rotation of the wafer 108, however, additional rotations may be performed. For example, the scanning procedure may include two rotations of the wafer 108 by the motor system 112 to allow the fluid to contact the entire surface of the wafer 108 twice. Following the scanning, the nozzle may be rotated (e.g., as described with reference to FIG. 6 ) such that the end of the nozzle extends beyond the edge of the wafer to aid in the uptake of fluid from the surface into the nozzle 304 via the second nozzle port 508.

[0038] 9F, the fluid processing system 106 is shown in an exemplary recovery configuration whereby the pump 602 is in fluid communication with the nozzle 304 via valve 648 in a first configuration, valve 638 in a third configuration, and valve 644 in a second configuration. In the recovery configuration, the pump 602 operates to draw fluid from the surface 146 of the wafer 108 through the second nozzle port 508 and out the nozzle 304 via the outlet port 504 where the fluid is drawn into the specimen holding loop 634. A sensor (e.g., sensor 660) may be utilized to control the operation of the pump 602, similar to the control of the pump 600 by the output of the sensors 534A / 534B. For example, the sensor 660 may detect the trailing end of the fluid flowing into the specimen holding loop 634, which may signal the pump 602 (e.g., via a controller of the fluid processing system 106) to stop operating. Once fluid is retained in the sample retention loop 634, the fluid handling system 106 can transition to a chemical injection configuration as described with reference to Figure 9C to introduce fluid to the sample analyzer via the transfer line 642. In an embodiment, the sample retention loop 634 has a larger volume (e.g., 1.5 mL) than the volume of fluid delivered to the nozzle 304 (e.g., 500 μL) to allow for total withdrawal of fluid following a scan.

[0039] Electromechanical devices (e.g., electric motors, servos, actuators, etc.) may be coupled to or embedded within components of system 100 to facilitate automated operation via control logic built into system 100 or externally driving system 100. Electromechanical devices may be configured to cause device and fluid movement according to various procedures, such as those described herein. System 100 may include or be controlled by a computing system having a processor or other controller configured to execute computer-readable program instructions (i.e., control logic) from a fixed carrier medium (e.g., a storage medium such as a flash drive, hard disk drive, solid state disk drive, SD card, optical disk, etc.). The computing system may be connected to various components of system 100 by direct connection or through one or more network connections (e.g., a local area network (LAN), a wireless area network (WAN or WLAN), one or more hub connections (e.g., USB hub), etc.). For example, the computing system may be communicatively coupled to chamber 102, motor system 112, valves described herein, pumps described herein, other components described herein, components directing their control, or combinations thereof. The program instructions, when executed by a processor or other controller, can cause the computing system to control the system 100 (e.g., controlling pumps, selecting valves, actuators, spray nozzles, positioning devices, etc.) in accordance with one or more operational modes described herein.

[0040] It should be appreciated that the various functions, control operations, processing blocks, or steps described throughout this disclosure may be implemented by any combination of hardware, software, or firmware. In some embodiments, the various steps or functions are performed by one or more of electronic circuits, logic gates, multiplexers, programmable logic devices, application specific integrated circuits (ASICs), controllers / microcontrollers, or computing systems. Computing systems may include, but are not limited to, personal computing systems, mobile computing devices, mainframe computing systems, workstations, image computers, parallel processors, or any other devices known in the art. In general, the term "computing system" is broadly defined to encompass any apparatus having one or more processors or other controllers that execute instructions from a carrier medium.

[0041] Program instructions implementing functions, control operations, processing blocks, or steps as manifested by the embodiments described herein may be transmitted over or stored on a carrier medium. The carrier medium may be a transmission medium such as, but not limited to, a wire, cable, or wireless transmission link. The carrier medium may also include, but is not limited to, a fixed signal-bearing medium or storage medium such as a read-only memory, a random access memory, a magnetic or optical disk, a solid-state or flash memory device, or a magnetic tape.

[0042] It will be further understood that the invention is defined by the appended claims. Although embodiments of the invention have been illustrated, it will be apparent to those skilled in the art that various modifications can be made without departing from the scope and spirit of the disclosure.

Claims

1. 1. A nozzle for scanning a surface of a material, comprising: a nozzle body defining one or more nozzle ports for receiving a fluid for introduction to a surface of the material and for withdrawing the fluid from the surface of the material; a nozzle hood extending from a nozzle body, the nozzle hood defining an inner channel longitudinally disposed along the nozzle body, the nozzle hood further defining one or more outer channels longitudinally disposed along the nozzle body, the inner channel fluidly coupled to the one or more outer channels through one or more gaps defined by the nozzle hood.

2. 2. The nozzle of claim 1, wherein the one or more outer channels include a first outer channel and a second outer channel, and a portion of the first outer channel disposed longitudinally along the nozzle body is separated from a portion of the second outer channel disposed longitudinally along the nozzle body by an inner channel.

3. 2. The nozzle of claim 1, wherein the nozzle hood includes a first hood portion and a second hood portion, the second hood portion being disposed within the nozzle hood defined by the first hood portion.

4. The nozzle of claim 3 , wherein the inner channel is defined by an interior area surrounded by the second hood portion.

5. The nozzle of claim 4 , wherein the one or more nozzle ports include a first nozzle port disposed in an interior area surrounded by the second hood portion.

6. 5. The nozzle of claim 4, wherein the one or more nozzle ports include a first nozzle port and a second nozzle port, the first nozzle port being disposed in an interior area surrounded by the second hood portion at a first end of the nozzle hood and the second nozzle port being disposed in an interior area surrounded by the second hood portion at a second end of the nozzle hood distal from the first end.

7. The nozzle of claim 6 , wherein the one or more nozzle ports include a third nozzle port disposed in an interior area surrounded by the second hood portion between the first nozzle port and the second nozzle port.

8. The nozzle of claim 4 , wherein the at least one outer channel is defined by an enclosed area between the first hood portion and the second hood portion.

9. The nozzle of claim 3 , wherein the one or more gaps include a gap defined by an opening in the second hood portion for fluidly coupling the first channel to the at least one outer channel.

10. The nozzle of claim 9 , wherein the gap is located at an end of the nozzle hood adjacent the nozzle port of the one or more nozzle ports.

11. The nozzle of claim 1 , wherein the surface of the material comprises a surface of a semiconductor wafer.

12. 1. A method of scanning a surface of a material with a multi-channel nozzle, comprising: introducing a scanning fluid onto a surface of the material through a nozzle, the nozzle comprising: a nozzle body defining one or more nozzle ports for receiving a fluid for introduction to a surface of the material and for withdrawing the fluid from the surface of the material; a nozzle hood extending from the nozzle body, the nozzle hood defining an inner channel longitudinally disposed along the nozzle body, the nozzle hood further defining one or more outer channels longitudinally disposed along the nozzle body, the inner channel fluidly coupled to the one or more outer channels via one or more gaps defined by the nozzle hood; directing at least a portion of the scanning fluid held within at least the inner channel through the nozzle and along the surface of the material; and removing the scanning fluid from the surface of the material through the one or more nozzle ports.

13. 13. The method of claim 12, wherein the one or more outer channels include a first outer channel and a second outer channel, and a portion of the first outer channel disposed longitudinally along the nozzle body is separated from a portion of the second outer channel disposed longitudinally along the nozzle body by an inner channel.

14. 13. The method of claim 12, wherein the nozzle hood includes a first hood portion and a second hood portion, the second hood portion being disposed within the nozzle hood formed by the first hood portion.

15. The method of claim 14 , wherein the inner channel is defined by an interior area surrounded by the second hood portion.

16. 13. The method of claim 12, wherein directing at least a portion of the scanning fluid held within at least the inner channel through the nozzle and along the surface of the material comprises directing the scanning fluid through the inner channel along the surface of the material until the scanning fluid reaches one or more gaps defined by the nozzle hood.

17. The method of claim 16 , further comprising directing the scanning fluid through the gap, along a surface of the material, and into the one or more outer channels.

18. 20. The method of claim 17, wherein the scanning fluid is maintained in a stream configuration fluidly coupled from one or more outer channels to the inner channel.

19. 17. The method of claim 16, wherein the scanning fluid is introduced to the surface of the material through a first nozzle port of the nozzle and the scanning fluid is removed from the surface of the material through a second nozzle port of the nozzle.

20. 17. The method of claim 16, wherein the scanning fluid is introduced to the surface of the material through a first nozzle port of the nozzle, and the scanning fluid is removed from the surface of the material through the first nozzle port of the nozzle.

Images