Electron beam application device and inspection method

Abstract

To make it possible to adjust an electronic optical system of a projection electron beam application device with high speed and high accuracy.SOLUTION: An electron beam application device comprises: an optical system 1 irradiating a sample 4 with excitation light 5; an electronic optical system 2 projecting a photoelectron image formed of photoelectrons emitted from the sample irradiated with the excitation light onto a camera 3; and a control part 20. The optical system includes a light source 11 generating excitation light and a pattern formation part 12. When the pattern formation part is in an ON-state, the excitation light forms an optical pattern on the surface of the sample, and when the pattern formation part is in an OFF-state, the excitation light does no form an optical pattern on the surface of the sample, but is applied to the sample. The control part adjusts the electronic optical system on the basis of a feature quantity of a bright / dark pattern formed by an optical pattern in a photoelectron image obtained when the pattern formation part is in the ON-state.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to an electron beam application device and an inspection method using the same. [Background technology]

[0002] A photoelectron emission microscope (PEEM) is an instrument that forms an image using photoelectrons generated by irradiating the surface of a sample with ultraviolet light or X-rays (excitation light), and can obtain a photoelectron image with contrast due to the surface structure of the sample.

[0003] Patent Document 1 discloses an example of the structure of a cathode lens microscope (PEEM is one example). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Special Publication No. 2009-528668 Summary of the Invention [Problem to be solved by the invention]

[0005] In the electron optical system of PEEM, a photoelectron image is projected onto a camera by an imaging lens system. If the height of the observation sample differs, the strength (focal length) of the objective lens must be changed to focus the photoelectron image. This changes the size of the photoelectron image formed on the object plane of the imaging lens system, and as a result, the size of the photoelectron image projected onto the camera (the image plane of the imaging lens system) also changes.

[0006] In order to eliminate the change in size of the photoelectron image due to focus adjustment, for example, the focus adjustment can be performed by acquiring a photoelectron image of a standard sample or a pattern of a known size on an observation sample, grasping the magnification of the obtained photoelectron image, and adjusting the magnification of the photoelectron image to a predetermined magnification. However, this method requires moving the observation field of view to adjust the magnification, which takes time. Furthermore, in order to accurately calculate the magnification of the photoelectron image, it is necessary to obtain a photoelectron image with high contrast. [Means for solving the problem]

[0007] An electron beam application device that is one embodiment of the present invention has an optical system that irradiates excitation light onto a sample, an electron optical system that projects a photoelectron image formed by photoelectrons emitted from the sample irradiated with the excitation light onto a camera, and a control unit, the optical system having a light source that generates excitation light and a pattern forming unit, and when the pattern forming unit is ON, the excitation light forms an optical pattern on the surface of the sample, and when the pattern forming unit is OFF, the excitation light is irradiated onto the sample without forming an optical pattern on the surface of the sample, and the control unit adjusts the electron optical system based on the features of the light and dark pattern formed by the optical pattern in the photoelectron image obtained with the pattern forming unit ON. Effect of the Invention

[0008] The present invention makes it possible to adjust the electron optical system of a projection type electron beam application apparatus at high speed and with high precision. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings. [Brief description of the drawings]

[0009] [Figure 1] 1 is a configuration example of an electron beam application device. [Figure 2A] FIG. 2 is a schematic diagram of interference fringes. [Figure 2B] FIG. 2 is a schematic diagram of interference fringes. [Figure 3A] 2 is a configuration example of a pattern forming unit. [Figure 3B] 2 is a configuration example of a pattern forming unit. [Figure 3C] 2 is a configuration example of a pattern forming unit. [Figure 4A] 2 is a configuration example of a pattern forming unit. [Figure 4B] 2 is an example of a mask pattern. [Diagram 5] 11A and 11B are diagrams for explaining photoelectron images when a pattern forming portion is turned ON and OFF. [Figure 6] 1 is a flowchart of observation using an electron beam application device. [Figure 7] 1 is a flowchart of an inspection using a PEEM type inspection device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] FIG. 1 shows an example of the configuration of the electron beam application device of this embodiment. FIG. 1 illustrates a PEEM that obtains an image (photoelectron image) by photoelectrons generated by irradiating the surface of a sample with excitation light such as laser light or X-rays. The main components of the device body 10 include a stage 7 for placing the sample 4, an optical system 1 for irradiating the sample 4 with excitation light 5, a camera 3 for capturing a photoelectron image, and an electron optical system 2 for projecting the photoelectron image onto the camera 3. The optical system 1 includes a light source 11 for generating excitation light 5 and a pattern forming unit 12. The pattern forming unit 12 irradiates the sample 4 with the excitation light 5 from the light source 11 as pattern light to form an optical pattern on the surface of the sample 4. Details will be described later, but the pattern light is irradiated from the optical system 1 to the sample 4 by turning on the pattern forming unit 12, and light that does not form an optical pattern on the sample surface (hereinafter referred to as uniform light) is irradiated to the sample 4 by turning off the pattern forming unit 12. In addition, the optical system 1 may include optical elements such as lenses and mirrors to irradiate the sample 4 with the excitation light 5. A photoelectron image due to photoelectrons 6 generated by irradiating excitation light 5 onto a sample 4 is projected onto a camera 3 by an electron optical system 2. In Fig. 1, the electron optical system 2 is shown representatively as an electron lens, but it may comprise one or more stages of electron lenses and other electron optical elements. The camera 3 may detect and capture the photoelectrons themselves, or may comprise a scintillator that converts electrons into light using the scintillator and detects and captures the converted light.

[0011] The device body 10 is connected to a control unit 20. The control unit 20 controls the device body 10 in response to instructions from a user inputted from a GUI (Graphical User Interface) device 22, and also performs image processing of the photoelectron image captured by the camera 3. The control unit 20 includes a storage unit 21, in which control parameters of the device body 10 and the photoelectron image are stored.

[0012] The pattern light that the pattern forming unit 12 irradiates onto the sample 4 will be described below. A first example of an optical pattern formed by the pattern light is an interference fringe that occurs when the excitation light from the light source 11 is split into a plurality of excitation lights by the pattern forming unit 12 and these light lights interfere with each other. FIG. 2A is a schematic diagram of an interference fringe obtained when the pattern forming unit 12 forms a one-dimensional optical path difference, in which the intensity of the excitation light 5 changes to form a stripe pattern on the sample surface. FIG. 2B is a schematic diagram of an interference fringe obtained when the pattern forming unit 12 forms a two-dimensional optical path difference, in which the intensity of the excitation light 5 changes to form a concentric circle pattern on the sample surface.

[0013] 3A to 3C show examples of the configuration of the pattern forming unit 12 that forms interference fringes on the sample surface. FIG. 3A shows an example in which an optical element 30 having an optical plane is used in the pattern forming unit 12. When the pattern forming unit 12 is turned on, the optical element 30 is inserted into the optical path of the excitation light. The excitation light is multiple-reflected between the incident surface 31 and the exit surface 32 of the optical element 30, and is branched into light having an optical path difference, resulting in interference fringes. When the pattern forming unit 12 is turned off, the optical element 30 is moved out of the optical path of the excitation light. In the figure, the reflections between the incident surface 31 and the exit surface 32 are shown at angles, but this is for the purpose of easily showing the state of multiple reflections. When the optical plane of the optical element 30 is arranged perpendicular to the optical path, the reflected light from the exit surface 32 is reflected in a direction perpendicular to the exit surface 32, so no positional deviation occurs between the light transmitted through the optical element 30 and the light reflected within the optical element 30 as shown in FIG. 3A.

[0014] FIG. 3B shows an example of using an optical assembly 40 that generates an optical path difference by optical path branching. The optical assembly 40 branches the incident light into a plurality of optical paths, and then merges the paths again to emit the light. In the example of FIG. 3B, the optical assembly 40 has movable half mirrors 41a and 41b and fixed mirrors 42a and 42b. When the pattern forming unit 12 is turned on, the half mirrors 41a and 41b are inserted into the optical path of the excitation light. By inserting the half mirrors 41a and 41b into the optical path of the excitation light, the half mirror 41a branches the excitation light into light that transmits the half mirror 41a and light that is reflected. The transmitted light 43 transmits through the half mirror 41b and is emitted from the optical assembly 40. On the other hand, the reflected light 44 is reflected by the mirrors 42a, 42b, and 41b, merges with the transmitted light 43, and is emitted from the optical assembly 40. The excitation light having an optical path difference interferes with each other to generate interference fringes. When the pattern forming unit 12 is turned off, the half mirrors 41a and 41b are moved out of the optical path of the excitation light.

[0015] 3C shows an example in which a movable mirror 50 is used. When the pattern forming unit 12 is turned ON, the movable mirror 50 is arranged so as to be perpendicular to the optical path of the reflected light 51 of the excitation light 5 reflected by the sample 4, and the reflected light 52 of the movable mirror 50 and the excitation light 5 interfere with each other to generate interference fringes. When the pattern forming unit 12 is turned OFF, the movable mirror 50 is moved out of the optical path of the reflected light 51.

[0016] In a second example of an optical pattern formed by pattern light, excitation light from the light source 11 is transmitted through or reflected by an optical mask on which a pattern (called a mask pattern) is formed, and the mask pattern is projected onto the sample 4. A transmission type mask or a reflection type mask can be used as the optical mask, and the pattern forming unit 12 is equipped with a projection optical system including a lens or a mirror so that the mask pattern of the optical mask is imaged on the sample 4. Fig. 4A shows an example of the configuration of the pattern forming unit 12 in which a transmission type mask 60 and a projection lens 61 are used to project the mask pattern formed on the transmission type mask 60 onto the sample 4.

[0017] Fig. 4B shows an example of a mask pattern formed on the transmission mask 60 shown in Fig. 4A. A checkered pattern is formed by transmission parts 63 that transmit the excitation light and shielding parts 64 that shield the excitation light. Even with a reflective mask, it is possible to project the same mask pattern onto the sample 4 by providing reflective parts and transmission parts in the same way. The shape of the mask pattern is not limited, but it is desirable to use a binary pattern that includes many line edges in order to adjust the electron optical system using the feature amount of the light and dark pattern formed by the optical pattern as described later.

[0018] When the pattern forming unit 12 is turned ON, an optical mask is inserted into the optical path of the excitation light from the light source 11. When the pattern forming unit 12 is turned OFF, the optical mask may be moved out of the optical path of the excitation light, or a detour may be provided in advance for irradiating the excitation light from the light source 11 to the sample 4 without passing through the optical mask, and the optical path of the excitation light may be switched to the detour.

[0019] Photoelectron images when the pattern forming unit 12 is turned ON and OFF will be described with reference to FIG. 5. Photoelectron image 70 is a photoelectron image when the pattern forming unit 12 is turned OFF (during observation). When the pattern forming unit 12 is turned OFF, the optical system 1 is adjusted so that the excitation light from the light source 11 is uniformly irradiated onto the sample 4. If the sample 4 has an area made of a different material or structure, the emission probability of photoelectrons generated by irradiation with the excitation light 5 differs between that area and other areas. The difference in the emission probability of photoelectrons becomes the contrast of the photoelectron image, and a photoelectron image is obtained.

[0020] Regions 72 in the photoelectron image 70 reflect regions of different materials or structures on the surface of the sample 4. The higher the intensity of the irradiated excitation light, the brighter the photoelectron image obtained. Therefore, if the excitation light intensity when uniform light is irradiated as the excitation light 5 is A, the photoelectron emission probability on the sample surface is P(x, y), and the brightness of the photoelectron image 70 is I1(x, y), then: I1(x,y)=A P(x,y) This can be expressed as follows.

[0021] On the other hand, when the pattern forming unit 12 is turned on and pattern light is irradiated as the excitation light 5, the excitation light intensity differs depending on the irradiation position. Therefore, when the excitation light intensity is A(x, y) and the brightness of the photoelectron image 71 is I2(x, y), I2(x,y)=A(x,y)·P(x,y) This can be expressed as follows.

[0022] Ideally, the maximum value of the excitation light intensity A(x,y) of the pattern light can be A (excitation light intensity when uniform light is irradiated) and the minimum value can be 0 (state where excitation light is not irradiated), so the contrast of the bright and dark pattern formed by the optical pattern can be greater than the contrast caused by the photoelectron emission probability P(x,y) due to the material and structure of the sample. Therefore, regardless of the material and structure of the sample surface of the sample 4, the bright and dark pattern 73 formed by the optical pattern in the photoelectron image 71 is easy to observe and can be analyzed accurately. By utilizing this, in this embodiment, first, the focus of the electron optical system 2 is adjusted based on the sharpness of the bright and dark pattern 73. Since the bright and dark pattern formed by the optical pattern has high contrast, the focus adjustment can be performed easily and accurately. Secondly, the magnification of the photoelectron image is calculated based on the dimensions of the optical pattern on the sample and the bright and dark pattern 73 in the photoelectron image 71. Since the bright and dark pattern formed by the optical pattern has high contrast, the magnification of the photoelectron image can also be calculated easily and accurately. The dimensions of the optical pattern formed on the sample by the pattern light are obtained in advance and stored in the storage unit 21 .

[0023] FIG. 6 shows a flowchart of observation using an electron beam application device. This flow is controlled by the control unit 20. First, preparation for observation is performed (S01). When preparation for observation is complete, it is sufficient that the position of the sample surface to be observed is captured in the observation field of view. Next, the control unit 20 turns on the pattern forming unit 12 (S02) and acquires an adjustment image (S03). The adjustment image is, for example, a photoelectron image such as photoelectron image 71 (see FIG. 5). The sharpness and magnification of the photoelectron image are calculated from the light and dark pattern of the adjustment image and compared with predetermined thresholds (S04).

[0024] When the light and dark pattern is a line pattern such as the light and dark pattern 73 of the photoelectron image 71, the change in luminance at the edge of the line pattern can be used as an index of sharpness. For example, if the change in luminance at the edge is steep, the sharpness can be determined to be high, and if it is gentle, the sharpness can be determined to be low. In addition, by counting the number of line patterns included in the adjustment image, the dimensions of the optical pattern corresponding to the line pattern are known, so that the actual dimensions of the area shown in the adjustment image can be calculated. The magnification can be calculated from the actual dimensions and the size of the adjustment image.

[0025] If the sharpness and magnification of the adjustment image do not satisfy the desired thresholds, the lens value of the electron optical system 2 is changed and magnification and focus adjustment are performed (S05). If the sharpness and magnification of the adjustment image satisfy the desired thresholds, the pattern forming unit is turned off (S06) and an image for observation is acquired (S07). The image for observation is, for example, a photoelectron image such as photoelectron image 70 (see FIG. 5). By adjusting the electron optical system with a light and dark pattern, a photoelectron image of the sample surface can be acquired as a clear photoelectron image at the desired magnification.

[0026] PEEM is generally used for observations aimed at analyzing samples, but currently, optical inspection equipment using light and SEM (Scanning Electron Microscope) type inspection equipment using electron beams are widely used, and it is thought that PEEM can be used as an inspection equipment for the pattern shapes formed on the surface of semiconductor wafers. This embodiment, which adjusts the electron optical system quickly and with high precision using the light and dark pattern formed by the optical pattern, is extremely effective for PEEM type inspection equipment.

[0027] FIG. 7 shows a flowchart of inspection using a PEEM inspection device. This flow is also controlled by the control unit 20. The same processes as those in the flowchart of FIG. 6 are given the same reference numerals, and duplicated explanations will be omitted. A plurality of inspection points are set on the semiconductor wafer, and after an inspection image for a certain inspection point is acquired (S07a), the stage moves to the next inspection point (S11). The control unit 20 turns on the pattern forming unit 12 (S02) and acquires an adjustment image (S03). The sharpness and magnification of the photoelectron image are calculated from the light and dark pattern of the adjustment image, and compared with predetermined thresholds (S04).

[0028] If the sharpness and magnification of the adjustment image do not satisfy the desired thresholds, the lens value of the electro-optical system 2 is changed to adjust the magnification and focus (S05). If the sharpness and magnification of the adjustment image satisfy the desired thresholds, the pattern forming unit is turned off (S06) and an inspection image is acquired (S07b). After that, the stage moves to the next inspection point.

[0029] As described above, by performing focus adjustment, the magnification of the inspection image at the inspection point changes. In the lens value changing step (S05), the lens value may be adjusted so that the inspection image has a constant magnification. Alternatively, if the magnification is within a predetermined range, it is not necessary to adjust the lens value to match the magnification of the inspection image at each inspection point. This can improve the throughput of acquiring the inspection image. Instead of changing the lens value to adjust the magnification, the inspection image obtained by image processing may be enlarged or reduced based on the magnification, or the pass / fail judgment in the inspection may be made taking into account the magnification of the inspection image without performing image processing on the inspection image. [Explanation of symbols]

[0030] 1: optical system, 2: electron optical system, 3: camera, 4: sample, 5: excitation light, 6: photoelectrons, 7: stage, 10: device body, 11: light source, 12: pattern forming section, 20: control section, 21: memory section, 22: GUI device, 30: optical element, 31: incident surface, 32: exit surface, 40: optical assembly, 41a, 41b: half mirror, 42a, 42b: mirror, 43: transmitted light, 44: reflected light, 50: movable mirror, 51, 52: reflected light, 60: transmission mask, 61: projection lens, 63: transmitting section, 64: shielding section, 70, 71: photoelectron image, 72: area, 73: light and dark pattern.

Claims

1. an optical system for irradiating the sample with excitation light; an electron optical system that projects a photoelectron image formed by photoelectrons emitted from the sample irradiated with the excitation light onto a camera; A control unit, the optical system includes a light source that generates the excitation light and a pattern forming unit, and when the pattern forming unit is ON, the excitation light forms an optical pattern on a surface of the sample, and when the pattern forming unit is OFF, the excitation light is irradiated onto the sample without forming the optical pattern on the surface of the sample; The control unit adjusts the electron optical system based on a feature amount of a light-dark pattern formed by the optical pattern in a photoelectron image obtained by turning on the pattern forming unit.

2. In claim 1, The control unit adjusts the focus of the electron optical system so that the sharpness of the light and dark pattern satisfies a predetermined threshold value.

3. In claim 1, The control unit pre-stores dimensions of the optical pattern, and calculates a magnification of the photoelectron image based on the light-dark pattern and the pre-stored dimensions of the optical pattern.

4. In claim 3, The control unit adjusts the magnification of the electron optical system so that the magnification of the photoelectron image satisfies a predetermined threshold value.

5. In claim 1, The optical pattern is an interference fringe, which is generated when the pattern forming unit branches the excitation light from the light source into multiple excitation light beams having optical path differences, and the multiple excitation light beams interfere with each other.

6. In claim 5, The pattern forming unit includes an optical element having an optical plane, and when the pattern forming unit is ON, the optical element is inserted into the optical path of the excitation light, and when the pattern forming unit is OFF, the optical element is positioned outside the optical path of the excitation light.

7. In claim 5, The pattern forming unit includes an optical assembly that branches incident light into multiple optical paths and then recombines the light to emit, and when the pattern forming unit is ON, the optical assembly branches the excitation light into the multiple optical paths and then recombines the light to emit, and when the pattern forming unit is OFF, the optical assembly emits the excitation light as is without branching it into the multiple optical paths.

8. In claim 1, The optical pattern is an interference fringe, which is generated by reflecting the excitation light reflected by the sample toward the sample using a mirror, causing the excitation light and the reflected light from the mirror to interfere with each other.

9. In claim 8, An electron beam application device in which, when the pattern formation unit is ON, the mirror is positioned to reflect the reflected light from the sample toward the sample, and, when the pattern formation unit is OFF, the mirror is positioned outside the optical path of the reflected light from the sample.

10. In claim 1, An electron beam application device, wherein the pattern forming unit includes an optical mask on which a mask pattern is formed and a projection optical system that projects the mask pattern onto the sample, and the optical pattern is the mask pattern projected onto the surface of the sample.

11. In claim 10, An electron beam application device in which the optical mask is positioned to transmit or reflect the excitation light when the pattern forming unit is ON, and when the pattern forming unit is OFF, the optical mask is positioned outside the optical path of the excitation light, or the optical path of the excitation light is diverted relative to the optical mask.

12. 1. An inspection method using an electron beam application device including: a stage for placing a sample; an optical system for irradiating the sample with excitation light; an electron optical system for projecting a photoelectron image formed by photoelectrons emitted from the sample irradiated with the excitation light onto a camera; and a control unit, A plurality of test points are set on the sample, moving the stage so that any one of the plurality of inspection points is included in an observation field of view; a pattern forming unit included in the optical system is turned on to obtain an adjustment image which is a photoelectron image in a state in which the excitation light forms an optical pattern on the surface of the sample, and the electron optical system is adjusted based on a feature amount of a light-dark pattern formed by the optical pattern in the adjustment image; An inspection method in which a pattern forming unit of the optical system is turned off and an inspection image, which is a photoelectron image, is obtained in a state in which the excitation light does not form the optical pattern on the surface of the sample.

13. In claim 12, An inspection method that adjusts the focus of the electron optical system so that the sharpness of the light and dark pattern of the adjustment image satisfies a predetermined threshold value.

14. In claim 13, The control unit pre-stores dimensions of the optical pattern, and calculates the magnification of the adjustment image based on the light and dark pattern of the adjustment image and the pre-stored dimensions of the optical pattern.

15. In claim 14, An inspection method that performs image processing to adjust the magnification of the electron optical system based on the magnification of the adjustment image so that the magnification of the adjustment image is constant, or to enlarge or reduce the inspection image based on the magnification of the adjustment image.

Images