Electronic Components and Semiconductor Devices

Abstract

To provide an electronic part with improved dielectric strength.SOLUTION: An electronic part 2A includes a first substrate 21, a second substrate 22, and a support member 23. The first substrate 21 includes a first base 211 and a first coil 210. The first coil 210 is electrically insulated from the first base 211. The second substrate 22 includes a second base 221 and a second coil 220. The second coil 220 is electrically insulated from the second base 221. The support member 23 supports the first substrate 21 and the second substrate 22. The first substrate 21 is arranged between the second substrate 22 and the support member 23 in a thickness direction z of the support member 23 and overlaps the second substrate 22 as viewed in a thickness direction x. The first base 211 is positioned between the first coil 210 and the second coil 220 in the thickness direction x. The first coil 210 and the second coil 220 are magnetically coupled to each other.SELECTED DRAWING: Figure 9

Description

[Technical field]

[0001] The present disclosure relates to electronic components and semiconductor devices. [Background technology]

[0002] A semiconductor device is used in an inverter device used in an electric vehicle, a hybrid vehicle, or a home appliance. The inverter device includes, for example, a semiconductor device and a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The semiconductor device has a control element and a drive element. In the inverter device, a control signal output from an ECU (Engine Control Unit) is input to the control element of the semiconductor device. The control element converts the control signal into a PWM (Pulse Width Modulation) control signal and transmits it to the drive element. The drive element drives, for example, six switching elements at a desired timing based on the PWM control signal. As a result, three-phase AC power for driving a motor is generated from the DC power of an on-board battery.

[0003] In the above semiconductor device, the power supply voltage supplied to the control element may be low (approximately 5V), and the power supply voltage supplied to the drive element may be high (approximately 600V or higher). When the power supply voltages are different between the two elements, an insulating element may be used to transmit signals between the two elements. For example, Patent Document 1 discloses a semiconductor integrated circuit that transmits signals via an insulating element. The semiconductor integrated circuit described in Patent Document 1 includes a transmitting circuit, a receiving circuit, and an insulating element. The transmitting circuit is formed on a first semiconductor chip, and the receiving circuit is formed on a second semiconductor chip. The insulating element is, for example, an inductor-type isolator including a primary coil and a secondary coil. The primary coil is conductive to the transmitting circuit, and the secondary coil is conductive to the receiving circuit. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2013-51547 A Summary of the Invention [Problem to be solved by the invention]

[0005] When the insulating element is an inductor type, as in the semiconductor integrated circuit described in Patent Document 1, a potential difference occurs between the primary coil and the secondary coil, which is the same as the potential difference of the power supply voltage supplied to the transmitting circuit (first semiconductor chip) and the receiving circuit (second semiconductor chip). In other words, since a potential difference occurs inside the insulating element, improving the withstand voltage of the semiconductor integrated circuit requires improving the withstand voltage of the insulating element.

[0006] The present disclosure has been made in view of the above circumstances, and has an object to provide an electronic component with improved dielectric strength voltage and a semiconductor device including an electronic component with improved dielectric strength voltage. [Means for solving the problem]

[0007] An electronic component provided by a first aspect of the present disclosure comprises a first substrate having a first substrate and a first coil, the first coil being electrically insulated from the first substrate; a second substrate having a second substrate and a second coil, the second coil being electrically insulated from the second substrate; and a support member supporting the first substrate and the second substrate, wherein the first substrate is disposed between the second substrate and the support member in a thickness direction of the support member and overlaps the second substrate as viewed in the thickness direction, the first substrate is located between the first coil and the second coil in the thickness direction, and the first coil and the second coil are magnetically coupled.

[0008] A semiconductor device provided by a second aspect of the present disclosure comprises an electronic component provided by the first aspect, a conductive support member including a first island portion and a second island portion spaced apart in a direction perpendicular to the thickness direction, a first semiconductor element mounted on the first island portion and constituting a first circuit, a second semiconductor element mounted on the second island portion and constituting a second circuit, and a sealing resin covering the electronic component, the first island portion, the second island portion, the first semiconductor element, and the second semiconductor element, wherein the first coil is electrically connected to the first semiconductor element and the second coil is electrically connected to the second semiconductor element, and the first circuit and the second circuit are electrically insulated by the electronic component. Effect of the Invention

[0009] The electronic components of the present disclosure can improve the withstand voltage, and the semiconductor device of the present disclosure includes electronic components with improved withstand voltage, thereby improving the withstand voltage of the semiconductor device. [Brief description of the drawings]

[0010] [Figure 1] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment. [Diagram 2] FIG. 2 is a plan view of FIG. 1, in which the sealing resin is shown by imaginary lines. [Diagram 3] FIG. 3 is a front view showing the semiconductor device according to the first embodiment. [Figure 4] FIG. 4 is a left side view showing the semiconductor device according to the first embodiment. [Diagram 5] FIG. 5 is a right side view showing the semiconductor device according to the first embodiment. [Figure 6] FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. [Figure 8] FIG. 8 is an exploded perspective view illustrating a detailed configuration example of the electronic component according to the first embodiment. [Figure 9]FIG. 9 is a cross-sectional view showing a detailed configuration example of the electronic component according to the first embodiment, and is an enlarged cross-sectional view of a main part of FIG. [Figure 10] FIG. 10 is a plan view showing the semiconductor device according to the second embodiment, in which the sealing resin is indicated by imaginary lines. [Figure 11] FIG. 11 is a cross-sectional view showing a detailed configuration example of the electronic component according to the second embodiment. [Figure 12] FIG. 12 is a plan view showing the semiconductor device according to the third embodiment, in which the sealing resin is indicated by imaginary lines. [Figure 13] FIG. 13 is a cross-sectional view showing a detailed configuration example of the electronic component according to the third embodiment. [Figure 14] FIG. 14 is a plan view showing the semiconductor device according to the fourth embodiment, in which the sealing resin is indicated by imaginary lines. [Figure 15] FIG. 15 is a cross-sectional view showing a detailed configuration example of the electronic component according to the fourth embodiment. [Figure 16] FIG. 16 is a cross-sectional view showing a detailed configuration example of an electronic component according to a modified example. [Figure 17] FIG. 17 is a cross-sectional view showing a detailed configuration example of an electronic component according to a modified example. [Figure 18] FIG. 18 is a cross-sectional view showing a detailed configuration example of an electronic component according to a modified example. [Figure 19] FIG. 19 is a plan view showing the semiconductor device according to the fifth embodiment, in which the sealing resin is indicated by imaginary lines. [Figure 20] FIG. 20 is a cross-sectional view taken along the line XX-XX in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the electronic component and semiconductor device of the present disclosure will be described below with reference to the drawings. In the following, identical or similar components are designated by the same reference numerals and duplicated descriptions will be omitted.

[0012] 1 to 9 show a semiconductor device A1 according to a first embodiment. As shown in these figures, the semiconductor device A1 includes a first semiconductor element 11, a second semiconductor element 12, an electronic component 2A, a conductive support member 3, a plurality of connection members 4, and a sealing resin 5. The conductive support member 3 has a first lead 31, a second lead 32, a plurality of third leads 33, and a plurality of fourth leads 34, and the plurality of connection members 4 include a plurality of first wires 41, a plurality of second wires 42, a plurality of third wires 43, a plurality of fourth wires 44, a plurality of fifth wires 45, and a sixth wire 46.

[0013] FIG. 1 is a plan view showing the semiconductor device A1. FIG. 2 is a view showing the sealing resin 5 by an imaginary line (two-dot chain line) in the plan view of FIG. 1. FIG. 3 is a front view showing the semiconductor device A1. FIG. 4 is a left side view showing the semiconductor device A1. FIG. 5 is a right side view showing the semiconductor device A1. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 2. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 2. FIG. 8 is an exploded perspective view showing a detailed configuration example of the electronic component 2A. FIG. 9 is a cross-sectional view showing a detailed configuration example of the electronic component 2A, and is an enlarged cross-sectional view of a main part of FIG. 6.

[0014] In the description of the semiconductor device A1, the thickness direction of each of the first semiconductor element 11, the second semiconductor element 12, the electronic component 2A, and the conductive support member 3 is referred to as the "thickness direction z." One side of the thickness direction z may be referred to as the top, and the other side as the bottom. In addition, in the following description, "planar view" refers to a view along the thickness direction z. The direction perpendicular to the thickness direction z is referred to as the "first direction x." The first direction x is the left-right direction in the plan view of the semiconductor device A1 (see FIG. 1). The direction perpendicular to both the thickness direction z and the first direction x is referred to as the "second direction y." The second direction y is the up-down direction in the plan view of the semiconductor device A1 (see FIG. 1).

[0015] The semiconductor device A1 is surface-mounted on a wiring board of an inverter device of an electric vehicle or a hybrid vehicle, for example. The semiconductor device A1 controls the switching operation of a switching element such as an IGBT or a MOSFET. As can be seen from Fig. 1 and Figs. 3 to 5, the package format of the semiconductor device A1 is an SOP (Small Outline Package). However, the package format of the semiconductor device A1 is not limited to an SOP.

[0016] The first semiconductor element 11, the second semiconductor element 12, and the electronic component 2A are elements that are the functional core of the semiconductor device A1. The first semiconductor element 11, the second semiconductor element 12, and the electronic component 2A are all composed of individual elements. In the first direction x, the electronic component 2A is located between the first semiconductor element 11 and the second semiconductor element 12. When viewed along the thickness direction z, each of the first semiconductor element 11, the second semiconductor element 12, and the electronic component 2A has a rectangular shape with the longer side extending in the second direction y.

[0017] The first semiconductor element 11 is a controller (control element) of a gate driver that drives switching elements such as IGBTs, MOSFETs, etc. The first semiconductor element 11 has a circuit that converts a control signal input from an ECU or the like into a PWM control signal, a transmission circuit that transmits the PWM control signal to the electronic component 2A, and a reception circuit that receives an electric signal from the electronic component 2A.

[0018] 2 and 6, the first semiconductor element 11 has a plurality of pads 111. The plurality of pads 111 are provided on an upper surface of the first semiconductor element 11 (a surface facing in the same direction as a first mounting surface 311a of a first island portion 311 of a first lead 31 described later). Each of the plurality of pads 111 contains, for example, aluminum (Al).

[0019] The second semiconductor element 12 is a gate driver (drive element) for driving a switching element. The second semiconductor element 12 has a receiving circuit for receiving a PWM control signal, a circuit for driving the switching element based on the PWM control signal, and a transmitting circuit for transmitting an electric signal to the first semiconductor element 11. The electric signal may be, for example, an output signal from a temperature sensor arranged near the motor.

[0020] 2 and 6, the second semiconductor element 12 has a plurality of pads 121. The plurality of pads 121 are provided on an upper surface of the second semiconductor element 12 (a surface facing in the same direction as a second mounting surface 321a of a second island portion 321 of a second lead 32 described later). Each of the plurality of pads 121 contains, for example, aluminum.

[0021] The electronic component 2A is an element (insulating element) for transmitting PWM control signals and other electric signals in an insulated state. The electronic component 2A is an inductor-coupled insulating element. The electronic component 2A transmits electric signals in an insulated state by inductively coupling two inductors (a first coil 210 and a second coil 220 described below). As shown in FIG. 2 and FIG. 6, the electronic component 2A has a plurality of pads 201, 202. Inside the electronic component 2A, each pad 201 is electrically connected to the first coil 210, and each pad 202 is electrically connected to the second coil 220. The composition of each of the plurality of pads 201, 202 includes, for example, aluminum. Other detailed configurations of the electronic component 2A will be described later.

[0022] In the semiconductor device A1, the second semiconductor element 12 requires a power supply voltage higher than that required for the first semiconductor element 11. For this reason, a significant potential difference occurs between the first semiconductor element 11 and the second semiconductor element 12. Therefore, a first circuit including the first semiconductor element 11 as a component and a second circuit including the second semiconductor element 12 as a component are insulated from each other by the electronic component 2A. The components of the first circuit include, in addition to the first semiconductor element 11, a first lead 31 and a plurality of third leads 33, a plurality of first wires 41, a plurality of third wires 43, and a plurality of fifth wires 45. The components of the second circuit include, in addition to the second semiconductor element 12, a second lead 32, a plurality of fourth leads 34, a plurality of second wires 42, a plurality of fourth wires 44, and a plurality of sixth wires 46. The first circuit and the second circuit have relatively different potentials. In the semiconductor device A1, the potential of the second circuit is higher than the potential of the first circuit. Then, electronic component 2A relays mutual signals between the first circuit and the second circuit. For example, in an inverter device for an electric vehicle or a hybrid vehicle, the voltage applied to the ground of first semiconductor element 11 is about 0V, whereas the voltage applied to the ground of second semiconductor element 12 may transiently reach 600V or more. Depending on the specifications of the inverter device, the voltage applied to the ground of second semiconductor element 12 may reach 3750V or more.

[0023] The conductive support member 3 constitutes a conductive path between the first semiconductor element 11, the second semiconductor element 12, and the electronic component 2A and the wiring board on which the semiconductor device A1 is mounted. The conductive support member 3 is obtained, for example, from the same lead frame. The lead frame is made of, for example, copper or a copper alloy, but may be made of other metal materials. As described above, the conductive support member 3 has the first lead 31, the second lead 32, a plurality of third leads 33, and a plurality of fourth leads 34.

[0024] 1 and 2, the first lead 31 and the second lead 32 are positioned apart from each other in the first direction x. In the semiconductor device A1, the first semiconductor element 11 and the electronic component 2A are mounted on the first lead 31, and the second semiconductor element 12 is mounted on the second lead 32.

[0025] As shown in FIG. 2, the first lead 31 includes a first island portion 311 and two first terminal portions 312.

[0026] The first island portion 311 has a first mounting surface 311a facing the thickness direction z. The first semiconductor element 11 and the electronic component 2A are joined to the first mounting surface 311a via a conductive bonding material (e.g., solder, metal paste, sintered metal, etc.) not shown. The first island portion 311 is covered with a sealing resin 5. In the illustrated example, the first island portion 311 has a rectangular shape in a plan view. The thickness of the first island portion 311 is, for example, not less than 100 μm and not more than 300 μm.

[0027] A plurality of through holes 313 are formed in the first island portion 311. Each of the plurality of through holes 313 penetrates the first island portion 311 in the thickness direction z and extends along the second direction y. In a plan view, at least one of the plurality of through holes 313 is located between the first semiconductor element 11 and the electronic component 2A. The plurality of through holes 313 are arranged along the second direction y.

[0028] As shown in FIG. 2, the two first terminals 312 extend from both sides of the first island portion 311 in the second direction y. The two first terminals 312 are located apart from each other in the second direction y. At least one of the two first terminals 312 is electrically connected to the ground of the first semiconductor element 11 via the fifth wire 45. Each of the two first terminals 312 has a covering portion 312a and an exposed portion 312b. The covering portion 312a is connected to the first island portion 311 and is covered with the sealing resin 5. The exposed portion 312b is connected to the covering portion 312a and is exposed from the sealing resin 5. In a plan view, the exposed portion 312b extends along the first direction x. As shown in FIG. 3, the exposed portion 312b is bent in a gull-wing shape when viewed along the second direction y. The surface of the exposed portion 312b may be plated with, for example, tin (Sn).

[0029] As shown in FIG. 2, the second lead 32 has a second island portion 321 and two second terminal portions 322.

[0030] 6, the second island portion 321 has a second mounting surface 321a facing the thickness direction z. The second semiconductor element 12 is bonded to the second mounting surface 321a via a conductive bonding material (e.g., solder, metal paste, sintered metal, etc.) not shown. The second island portion 321 is covered with a sealing resin 5. In the illustrated example, the second island portion 321 has a rectangular shape in a plan view. The thickness of the second island portion 321 is, like the first island portion 311, for example, not less than 100 μm and not more than 300 μm.

[0031] As shown in FIG. 2, the two second terminals 322 extend from both sides of the second island portion 321 in the second direction y. The two second terminals 322 are located apart from each other in the second direction y. At least one of the two second terminals 322 is electrically connected to the ground of the second semiconductor element 12 via the sixth wire 46. Each of the two second terminals 322 has a covering portion 322a and an exposed portion 322b. The covering portion 322a is connected to the second island portion 321 and is covered with the sealing resin 5. The exposed portion 322b is connected to the covering portion 322a and is exposed from the sealing resin 5. In a plan view, the exposed portion 322b extends along the first direction x. As shown in FIG. 3, the exposed portion 322b is bent in a gull-wing shape when viewed along the second direction y. The surface of the exposed portion 322b may be, for example, tin-plated.

[0032] As shown in FIG. 1 and FIG. 2, the multiple third leads 33 are located on the opposite side of the first island portion 311 of the first lead 31 from the second island portion 321 of the second lead 32 in the first direction x. The multiple third leads 33 are arranged along the second direction y. At least one of the multiple third leads 33 is electrically connected to the first semiconductor element 11 via the second wire 42. The multiple third leads 33 include multiple intermediate leads 33A and two side leads 33B. Each of the two side leads 33B is located between one of the two first terminal portions 312 of the first lead 31 and the intermediate lead 33A located closest to the first terminal portion 312 in the second direction y.

[0033] 2 and 6, each of the third leads 33 (the intermediate leads 33A and the two side leads 33B) has a covering portion 331 and an exposed portion 332. The covering portion 331 is covered with a sealing resin 5. The dimension in the first direction x of each of the covering portions 331 of the two side leads 33B is larger than the dimension in the first direction x of each of the covering portions 331 of the intermediate leads 33A.

[0034] 2 and 6, the exposed portion 332 is connected to the covering portion 331 and is exposed from the sealing resin 5. In a plan view, the exposed portion 332 extends along the first direction x. When viewed along the second direction y, the exposed portion 332 is bent in a gull-wing shape. The shape of the exposed portion 332 is equal to the shape of the exposed portion 312b of each first terminal portion 312 of the first lead 31. The surface of the exposed portion 332 may be plated with tin, for example.

[0035] As shown in FIG. 1 and FIG. 2, the multiple fourth leads 34 are located on the opposite side to the multiple third leads 33 with respect to the first island portion 311 of the first lead 31 in the first direction x. The multiple fourth leads 34 are arranged along the second direction y. At least one of the multiple fourth leads 34 is electrically connected to the second semiconductor element 12 via a fourth wire 44. The multiple fourth leads 34 include multiple intermediate leads 34A and two side leads 34B. The two side leads 34B are located on both sides of the multiple intermediate leads 34A in the second direction y. In the second direction y, one of the two second terminal portions 322 of the second lead 32 is located between one of the two side leads 34B and the intermediate lead 34A located closest to the side lead 34B.

[0036] 2 and 6, each of the fourth leads 34 (the intermediate leads 34A and the two side leads 34B) has a covering portion 341 and an exposed portion 342. The covering portion 341 is covered with a sealing resin 5. The dimension in the first direction x of each of the covering portions 341 of the two side leads 34B is larger than the dimension in the first direction x of each of the covering portions 341 of the intermediate leads 34A.

[0037] 2 and 6, the exposed portion 342 is connected to the covering portion 341 and is exposed from the sealing resin 5. In a plan view, the exposed portion 342 extends along a first direction x. As shown in FIG. 3, the exposed portion 342 is bent in a gull-wing shape when viewed along a second direction y. The shape of the exposed portion 342 is equal to the shape of each exposed portion 322b of the two second terminal portions 322 of the second lead 32. The surface of the exposed portion 342 may be plated with tin, for example.

[0038] Each of the multiple connection members 4 provides electrical continuity between two parts spaced apart from each other. As described above, the multiple connection members 4 include the multiple first wires 41, the multiple second wires 42, the multiple third wires 43, the multiple fourth wires 44, the multiple fifth wires 45, and the multiple sixth wires 46.

[0039] The first wires 41, the second wires 42, the third wires 43, the fourth wires 44, the fifth wires 45 and the sixth wires 46 are each made of a metal material, and the metal material includes, for example, any of gold, copper and aluminum. The connection members 4 may be bonding ribbons or plate-shaped metal members instead of the first wires 41, the second wires 42, the third wires 43, the fourth wires 44, the fifth wires 45 and the sixth wires 46, as appropriate.

[0040] Each of the multiple first wires 41 is bonded to one of the multiple pads 111 of the first semiconductor element 11 and one of the multiple pads 201 of the electronic component 2A. Each first wire 41 electrically connects the first semiconductor element 11 and the electronic component 2A. The multiple first wires 41 are arranged along the second direction y.

[0041] Each of the multiple second wires 42 is bonded to one of the multiple pads 121 of the second semiconductor element 12 and one of the multiple pads 202 of the electronic component 2A. Each second wire 42 electrically connects the second semiconductor element 12 and the electronic component 2A. The multiple second wires 42 are arranged along the second direction y. Each of the multiple second wires 42 straddles between the first island portion 311 of the first lead 31 and the second island portion 321 of the second lead 32.

[0042] Each of the multiple third wires 43 is joined to one of the multiple pads 111 of the first semiconductor element 11 and to the covering portion 331 of one of the multiple third leads 33. Each of the third wires 43 electrically connects the first semiconductor element 11 and one of the multiple third leads 33.

[0043] Each of the multiple fourth wires 44 is joined to one of the multiple pads 121 of the second semiconductor element 12 and to the covering portion 341 of one of the multiple fourth leads 34. Each of the fourth wires 44 electrically connects the second semiconductor element 12 and one of the multiple fourth leads 34.

[0044] Each of the multiple fifth wires 45 is joined to one of the multiple pads 111 of the first semiconductor element 11 and to the covering portion 312a of one of the two first terminal portions 312. Each of the fifth wires 45 electrically connects the first semiconductor element 11 and the first lead 31.

[0045] Each of the multiple sixth wires 46 is joined to one of the multiple pads 121 of the second semiconductor element 12 and to the covering portion 322a of one of the two second terminal portions 322. Each of the sixth wires 46 electrically connects the second semiconductor element 12 and the second lead 32.

[0046] As shown in FIG. 1, the sealing resin 5 covers the first semiconductor element 11, the second semiconductor element 12, the electronic component 2A, a part of the conductive support member 3, and the multiple connection members 4. The sealing resin 5 has electrical insulation properties. The sealing resin 5 insulates the first lead 31 and the second lead 32 from each other. The sealing resin 5 is made of a material containing, for example, a black epoxy resin. In the illustrated example, the sealing resin 5 has a rectangular shape in a plan view.

[0047] As shown in FIGS. 3 to 5, the sealing resin 5 has a top surface 51, a bottom surface 52, a pair of first side surfaces 53, and a pair of second side surfaces .

[0048] 3 to 5, top surface 51 and bottom surface 52 are located apart from each other in thickness direction z. Top surface 51 and bottom surface 52 face opposite each other in thickness direction z. Each of top surface 51 and bottom surface 52 is approximately flat.

[0049] As shown in Figs. 3 to 5, the pair of first side surfaces 53 are connected to the top surface 51 and the bottom surface 52, and are spaced apart from each other in the first direction x. From the first side surface 53 located on one side in the first direction x, of the pair of first side surfaces 53, the exposed portions 312b of the two first terminal portions 312 (first leads 31) and the exposed portions 332 of the multiple third leads 33 are exposed. From the first side surface 53 located on the other side in the first direction x, of the pair of first side surfaces 53, the exposed portions 322b of the two second terminal portions 322 (second leads 32) and the exposed portions 342 of the multiple fourth leads 34 are exposed.

[0050] As shown in FIG. 3 to FIG. 5, each of the pair of first side surfaces 53 includes a first upper portion 531, a first lower portion 532, and a first intermediate portion 533. The first upper portion 531 has one side in the thickness direction z connected to the top surface 51, and the other side in the thickness direction z connected to the first intermediate portion 533. The first upper portion 531 is inclined with respect to the top surface 51. The first lower portion 532 has one side in the thickness direction z connected to the bottom surface 52, and the other side in the thickness direction z connected to the first intermediate portion 533. The first lower portion 532 is inclined with respect to the bottom surface 52. The first intermediate portion 533 has one side in the thickness direction z connected to the first upper portion 531, and the other side in the thickness direction z connected to the first lower portion 532. The in-plane directions of the first intermediate portion 533 are the thickness direction z and the second direction y. In a plan view, the first intermediate portion 533 is located outward from the top surface 51 and the bottom surface 52. From the first intermediate portion 533 of the pair of first side surfaces 53, the exposed portions 312b of the two first terminal portions 312 (first leads 31), the exposed portions 322b of the two second terminal portions 322 (second leads 32), the exposed portions 332 of the multiple third leads 33, and the exposed portions 342 of the multiple fourth leads 34 are exposed.

[0051] 3 to 5, the pair of second side surfaces 54 are connected to the top surface 51 and the bottom surface 52, and are spaced apart from each other in the second direction y. As shown in FIG. 1, the first lead 31, the second lead 32, the multiple third leads 33, and the multiple fourth leads 34 are spaced apart from the pair of second side surfaces 54.

[0052] As shown in FIG. 3 to FIG. 5, each of the pair of second side surfaces 54 includes a second upper portion 541, a second lower portion 542, and a second intermediate portion 543. The second upper portion 541 has one side in the thickness direction z connected to the top surface 51, and the other side in the thickness direction z connected to the second intermediate portion 543. The second upper portion 541 is inclined with respect to the top surface 51. The second lower portion 542 has one side in the thickness direction z connected to the bottom surface 52, and the other side in the thickness direction z connected to the second intermediate portion 543. The second lower portion 542 is inclined with respect to the bottom surface 52. The second intermediate portion 543 has one side in the thickness direction z connected to the second upper portion 541, and the other side in the thickness direction z connected to the second lower portion 542. The in-plane directions of the second intermediate portion 543 are the thickness direction z and the second direction y. In a plan view, the second intermediate portion 543 is located outward from the top surface 51 and the bottom surface 52.

[0053] In the motor driver circuit of the inverter device, a half-bridge circuit including a low-side (low potential side) switching element and a high-side (high potential side) switching element is generally configured. In the following description, the case where these switching elements are MOSFETs is assumed. Here, in the low-side switching element, the reference potentials of the source of the switching element and the gate driver driving the switching element are both ground. On the other hand, in the high-side switching element, the reference potentials of the source of the switching element and the gate driver driving the switching element are both equivalent to the potential at the output node of the half-bridge circuit. Since the potential at the output node changes depending on the driving of the high-side switching element and the low-side switching element, the reference potential of the gate driver driving the high-side switching element changes. When the high-side switching element is on, the reference potential is equivalent to the voltage applied to the drain of the high-side switching element (for example, 600V or more). In the semiconductor device A1, the ground of the first semiconductor element 11 and the ground of the second semiconductor element 12 are configured to be separated. Therefore, when the semiconductor device A1 is used as a gate driver for driving a high-side switching element, a voltage equivalent to the voltage applied to the drain of the high-side switching element is transiently applied to the ground of the second semiconductor element 12.

[0054] Next, a detailed configuration example of the electronic component 2A will be described.

[0055] 8 and 9, electronic component 2A has first substrate 21, second substrate 22, support member 23, first wiring portion 24, second wiring portion 25, and insulating film 26. Moreover, electronic component 2A has a plurality of pads 201, 202 as described above.

[0056] The support member 23 supports the first substrate 21 and the second substrate 22. The support member 23 is made of, for example, an intrinsic semiconductor and is insulating. The support member 23 includes, for example, silicon as a constituent material. The composition of the support member 23 is not limited to one including silicon, and may be other insulating substrate materials (for example, glass epoxy resin or ceramic). The support member 23 is, for example, rectangular in plan view. The support member 23 has a third main surface 23a, a third back surface 23b, and a recess 231.

[0057] The third main surface 23a and the third back surface 23b are spaced apart in the thickness direction z. The distance between the third main surface 23a and the third back surface 23b in the thickness direction z is, for example, 700 μm or more and 750 μm or less. The third main surface 23a faces one side (upward) in the thickness direction z, and the third back surface 23b faces the other side (downward) in the thickness direction z. The third main surface 23a and the third back surface 23b are both flat. The third main surface 23a is frame-shaped surrounding the recess 231 in a plan view. The third back surface 23b faces the first island portion 311.

[0058] The recess 231 is recessed from the third main surface 23a in the thickness direction z. A part or the whole of the first substrate 21 is accommodated in the recess 231. In the example shown in Fig. 9, a part of the first substrate 21 is accommodated in the recess 231. The recess 231 is formed by, for example, anisotropic etching. The recess 231 may be formed by other etching, laser processing, grinding processing, etc. instead of anisotropic etching.

[0059] As shown in FIG. 8 and FIG. 9, the recess 231 has a bottom surface 231a and an inclined surface 231b. The bottom surface 231a is flat and faces the same direction as the third main surface 23a in the thickness direction z. The distance between the third main surface 23a and the bottom surface 231a in the thickness direction z, that is, the depth of the recess 231, is, for example, 100 μm or more and 200 μm or less. The inclined surface 231b is inclined with respect to the third main surface 23a and the bottom surface 231a. When the recess 231 is formed by anisotropic etching, the inclination angle of the inclined surface 231b with respect to the third main surface 23a is 54.7 degrees. The inclined surface 231b is in the shape of a frame surrounding the bottom surface 231a in a plan view.

[0060] The first substrate 21 is spaced apart from the second substrate 22. The first substrate 21 is disposed between the second substrate 22 and the support member 23 in the thickness direction z. The first substrate 21 overlaps the second substrate 22 when viewed in the thickness direction z. The first substrate 21 has, for example, a rectangular shape in a plan view. At least a portion of the first substrate 21 is accommodated in the recess 231. The dimension of the first substrate 21 along the thickness direction z is, for example, not less than 100 μm and not more than 150 μm. The first substrate 21 has a first base material 211 and a wiring layer 212.

[0061] The first base material 211 is made of an insulating material. The first base material 211 includes, for example, glass as a constituent material. The glass is, for example, SiO 2 In order to improve the dielectric strength of the first base material 211, fluorine may be contained in the glass of the first base material 211. The first base material 211 supports the wiring layer 212.

[0062] The first base material 211 has a first main surface 211a and a first back surface 211b. The first main surface 211a and the first back surface 211b are spaced apart in the thickness direction z. As shown in FIG. 9, the first main surface 211a faces the support member 23, and the first back surface 211b faces the second substrate 22.

[0063] The wiring layer 212 is formed on the first main surface 211a of the first base material 211. The wiring layer 212 may be formed on the first main surface 211a. The wiring layer 212 is made of copper or a copper alloy. The wiring layer 212 has a plurality of first coils 210, a plurality of first terminal portions 213, and a plurality of first pad portions 214. Note that the number of first coils 210 may be one instead of a plurality of coils.

[0064] The wiring layer 212 is formed, for example, as follows. First, trench processing is performed on the first base material 211. The trench processing is performed on the first main surface 211a side of the first base material 211, where the wiring layer 212 is to be formed. Next, a seed oxide film is formed by a sputtering method, and the wiring layer 212 is formed in the trench by photolithography and plating. The method of forming the wiring layer 212 is one example, and is not limited to this method.

[0065] Each of the first coils 210 is a planar coil and is wound in a spiral shape in a planar view. Each of the first coils 210 is circular in a planar view, but may be rectangular. In this embodiment, the first base material 211 is made of an insulating material, so that each of the first coils 210 and the first base material 211 are electrically insulated from each other.

[0066] Each of the multiple first terminals 213 is electrically connected to one of the multiple first coils 210. Each first terminal 213 is joined to the first wiring portion 24 via a conductive bonding material 219a. The conductive bonding material 219a is made of, for example, solder, metal paste, or sintered metal. The multiple first terminals 213 include one that serves as an input end of a current to each first coil 210, and one that serves as an output end of a current from each first coil 210.

[0067] The first pads 214 are separated from and insulated from the first coils 210 and the first terminals 213. Each of the first pads 214 is bonded to either the first wiring 24 or the insulating film 26 via an insulating bonding material 219b. The insulating bonding material 219b may be entirely made of an insulating material, or may be a conductive material whose entire surface is covered with an insulating material. Each of the first pads 214 is located on one side of each of the first terminals 213 in the first direction x.

[0068] The second substrate 22 is, for example, rectangular in plan view. The second substrate 22 is disposed on the third main surface 23a. The second substrate 22 straddles the recess 231 in the first direction x. The dimension of the second substrate 22 in the thickness direction z is, for example, 150 μm or more and 300 μm or less. The second substrate 22 has a second base material 221, a plurality of wiring layers 222, and an interlayer insulating film 223.

[0069] The second base material 221 includes, for example, silicon as a constituent material. The second base material 221 supports a plurality of wiring layers 222 and an interlayer insulating film 223.

[0070] The second base material 221 has a second main surface 221a and a second back surface 221b. The second main surface 221a and the second back surface 221b are spaced apart in the thickness direction z. As shown in FIG. 9, the second main surface 221a faces the first substrate 21 and the support member 23. As shown in FIG. 9, an insulating film 228 is formed on the second main surface 221a. The insulating film 228 is, for example, a silicon oxide film, but may be other insulating materials. The insulating film 228 is provided to prevent unintended short circuits from occurring in the multiple wiring layers 222 through the second base material 221. The insulating film 228 may cover not only the second main surface 221a but also the entire surface of the second base material 221.

[0071] The multiple wiring layers 222 are formed on the second main surface 221a of the second base material 221 via an insulating film 228. The multiple wiring layers 222 are stacked with an interlayer insulating film 223 sandwiched therebetween. In the example shown in FIG. 9, the second substrate 22 includes two wiring layers 222 and one interlayer insulating film 223 sandwiched therebetween. The multiple wiring layers 222 are electrically connected to each other via through electrodes (not shown) that appropriately penetrate the interlayer insulating film 223. Each of the multiple wiring layers 222 is made of, for example, copper or a copper alloy. The thickness of the interlayer insulating film 223 is, for example, about 2 μm.

[0072] As shown in FIG. 9, the multiple wiring layers 222 include a first wiring layer 222A and a second wiring layer 222B. As shown in FIG. 9, the second wiring layer 222B is a surface layer of the multiple wiring layers 222 that is closer to the second base material 221 in the thickness direction z. The second wiring layer 222B is in contact with the second main surface 221a. As shown in FIG. 9, the first wiring layer 222A is a surface layer of the multiple wiring layers 222 that is farther from the second base material 221 in the thickness direction z and is a surface layer of the multiple wiring layers 222 that is closer to the first base material 211 in the thickness direction z. As shown in FIG. 8 and FIG. 9, the first wiring layer 222A has multiple second coils 220, multiple second terminal portions 224, and multiple second pad portions 225. The number of second coils 220 may be one instead of multiple.

[0073] Each of the second coils 220 is a planar coil, similar to each of the first coils 210, and is wound in a spiral shape in a planar view. Each of the second coils 220 is circular in a planar view, but may be rectangular. In this embodiment, an insulating film 228 is interposed between the second base material 221 and the multiple wiring layers 222, so that each of the second coils 220 and the second base material 221 are electrically insulated from each other.

[0074] Each of the second terminals 224 is electrically connected to one of the second coils 220. Each second terminal 224 is joined to the second wiring portion 25 via a conductive bonding material 229a. The conductive bonding material 229a is made of, for example, solder, metal paste, or sintered metal. The second terminals 224 include one that serves as an input end of a current to each second coil 220 and one that serves as an output end of a current from each second coil 220.

[0075] The second pads 225 are separated from and insulated from both the second coils 220 and the second terminals 224. Each of the second pads 225 is bonded to either the second wiring 25 or the insulating film 26 via an insulating bonding material 229b. The insulating bonding material 229b may be entirely made of an insulating material, or may be a conductive material whose entire surface is covered with an insulating material. In the example shown in FIG. 8 and FIG. 9, the second pads 225 are located on the opposite side of the second coil 220 to the second terminals 224 in the first direction x.

[0076] The first wiring portion 24 and the second wiring portion 25 are each formed on the support member 23. The first wiring portion 24 and the second wiring portion 25 are spaced apart from each other. The first wiring portion 24 and the second wiring portion 25 are made of, for example, copper or a copper alloy.

[0077] The first wiring portion 24 is formed so as to extend from above a portion of the third main surface 23a to above a portion of the recess 231. Each of the first terminal portions 213 is joined to the first wiring portion 24 via a conductive bonding material 219a. This allows the first wiring portion 24 to be electrically connected to each of the first coils 210 (wiring layer 212). As shown in FIGS. 8 and 9, each of the pads 201 is formed on the first wiring portion 24.

[0078] The second wiring portion 25 is formed on a part of the third main surface 23a. The second terminal portions 224 are joined to the second wiring portion 25 via conductive bonding material 229a. This allows the second wiring portion 25 to be electrically connected to the second coils 220 (first wiring layer 222A of wiring layer 222). As shown in FIGS. 8 and 9, the pads 202 are formed on the second wiring portion 25.

[0079] The insulating film 26 is formed between the support member 23 and each of the first wiring portion 24 and the second wiring portion 25. The insulating film 26 covers the third main surface 23a, the bottom surface 231a, and the inclined surface 231b. The insulating film 26 is, for example, an oxide film, such as SiO 2The insulating film 26 suppresses conduction between the first wiring portion 24 and the second wiring portion 25 via the support member 23. The thickness of the insulating film 26 is, for example, about 10 μm. When the support member 23 is made of an insulating material, the insulating film 26 does not need to be provided, but in order to suppress unintended conduction via the support member 23, it is preferable to have the insulating film 26. This unintended conduction may occur, for example, between the first wiring portion 24 and the second wiring portion 25, or between the first wiring portion 24 and the second wiring portion 25 and the first island portion 311.

[0080] 9, in electronic component 2A, each first coil 210 of first substrate 21 and each second coil 220 of second substrate 22 are magnetically coupled to each other. A first base material 211 is disposed between each first coil 210 and each second coil 220.

[0081] 9, in electronic component 2A, there is a gap between first substrate 21 and second substrate 22. The size of this gap along thickness direction z is about several tens of μm. This gap may be filled with sealing resin 5, or may be an empty space without being filled with sealing resin 5 (it may be filled with air or vacuum).

[0082] The functions and effects of the electronic component 2A and the semiconductor device A1 are as follows.

[0083] The electronic component 2A includes a first substrate 21 and a second substrate 22. The first substrate 21 has a first coil 210 and a first base material 211, and the second substrate 22 has a second coil 220 and a second base material 221. The first base material 211 is located between the first coil 210 and the second coil 220 in the thickness direction z. According to this configuration, the first coil 210 and the second coil 220 are formed on different substrates (the first substrate 21 and the second substrate 22), and the first base material 211 is disposed between the first coil 210 and the second coil 220. There is an insulating element different from the electronic component 2A, which is, for example, a silicon substrate on which a primary coil and a secondary coil are stacked. In this insulating element, the primary coil and the secondary coil are sandwiched by one interlayer insulating layer, and are insulated by this interlayer insulating layer (silicon oxide film). In this configuration, it was not easy to increase the distance between the primary coil and the secondary coil. In contrast, in the electronic component 2A, the first base material 211 is interposed between the first coil 210 and the second coil 220, and the distance between the first coil 210 and the second coil 220 is greater than when the first coil 210 and the second coil 220 are insulated by an interlayer insulating layer. Therefore, the electronic component 2A can increase the distance between the first coil 210 and the second coil 220, thereby improving the dielectric strength. In addition, in the insulating element different from the electronic component 2A, it is possible to increase the number of stacked interlayer insulating layers between the primary coil and the secondary coil to increase the distance between the primary coil and the secondary coil. In this case, however, warping may occur in the insulating element, which may affect the reliability of the electronic component. In addition, it is necessary to form multiple interlayer insulating layers between the primary coil and the secondary coil, which leads to a decrease in manufacturing efficiency. Therefore, the electronic component 2A can suppress the effect on reliability and the decrease in manufacturing efficiency while ensuring the dielectric strength.

[0084] In electronic component 2A, first base material 211 is made of glass. With this configuration, it is easy to adjust the thickness of first base material 211, and therefore it is possible to prevent the thickness of first base material 211 from becoming small. In other words, electronic component 2A can ensure that first base material 211 has an appropriate thickness, and improve the dielectric strength voltage between first coil 210 and second coil 220.

[0085] In electronic component 2A, support member 23 has recess 231 that accommodates at least a portion of first substrate 21. With this configuration, even if first base material 211 is made thick (for example, 100 μm or more), the thickness of electronic component 2A can be prevented from increasing. In other words, electronic component 2A can be made smaller while maintaining an appropriate dielectric strength.

[0086] The semiconductor device A1 includes an electronic component 2A with improved dielectric strength. Therefore, the semiconductor device A1 has improved dielectric strength between the first circuit including the first semiconductor element 11 and the second circuit including the second semiconductor element 12.

[0087] In the semiconductor device A1, the electronic component 2A is mounted on the first island portion 311 (first lead 31). The first wiring portion 24 is electrically connected to the first semiconductor element 11, and the second wiring portion 25 is electrically connected to the second semiconductor element 12. In the support member 23 in which the recess 231 is formed, the distance between the bottom surface 231a and the third back surface 23b in the thickness direction z is smaller than the distance between the third main surface 23a and the third back surface 23b in the thickness direction z. Therefore, the distance between the first wiring portion 24 formed on the bottom surface 231a and the first island portion 311 in the thickness direction z is smaller than the distance between the second wiring portion 25 formed on the third main surface 23a and the first island portion 311 in the thickness direction z. Therefore, in electronic component 2A, by setting first wiring portion 24 and first island portion 311 at the same potential rather than setting second wiring portion 25 and first island portion 311 at the same potential, it is possible to prevent dielectric breakdown of support member 23. In other words, when electronic component 2A is mounted on first island portion 311, semiconductor device A1 has a structure that is preferable for improving the dielectric strength voltage of semiconductor device A1.

[0088] 10 and 11 show a semiconductor device A2 according to the second embodiment. Compared to the semiconductor device A1, the semiconductor device A2 includes an electronic component 2B instead of the electronic component 2A. Other configurations of the semiconductor device A2 are similar to those of the semiconductor device A1. FIG. 10 is a plan view showing the semiconductor device A2 and corresponds to FIG. 2. FIG. 11 is a cross-sectional view showing a detailed configuration example of the electronic component 2B and corresponds to FIG. 9.

[0089] 11, electronic component 2B is different from electronic component 2A mainly in the following respect: no recess 231 is formed in support member 23, and multiple columnar portions 271, 272 are provided between second substrate 22 and support member 23. Since electronic component 2B does not have recess 231 formed in support member 23, second substrate 22 is disposed above first substrate 21 in thickness direction z by using multiple columnar portions 271, 272.

[0090] In the electronic component 2B, the first wiring portion 24 and the second wiring portion 25 are all formed on the third main surface 23a with the insulating film 26 interposed therebetween.

[0091] Each of the plurality of columnar portions 271 is made of a metal material. Each columnar portion 271 is conductive. Each columnar portion 271 extends in the thickness direction z. An end portion on one side (upper side) in the thickness direction z of each columnar portion 271 is joined to each second terminal portion 224 via a conductive bonding material 229a, and an end portion on the other side (lower side) in the thickness direction z of each columnar portion 271 is joined to each second wiring portion 224 via a conductive bonding material 229a. Thus, the second wiring portion 25 and each second terminal portion 224 are electrically connected to each other via each columnar portion 271. The dimension of each columnar portion 271 in the thickness direction z is larger than the dimension of the first substrate 21 in the thickness direction z. This allows the second substrate 22 to be disposed above the first substrate 21 in the thickness direction z.

[0092] Each of the plurality of columnar portions 272 is made of a metal material. Each columnar portion 272 extends in the thickness direction z. The end of each columnar portion 272 on one side (upper side) in the thickness direction z is joined to each second pad portion 225 via an insulating bonding material 229b, and the end of the other side (lower side) in the thickness direction z is joined to the first wiring portion 24 or the insulating film 26 via the insulating bonding material 229b. Each columnar portion 272 may be made of an insulating material instead of a metal material. The dimension of each columnar portion 272 along the thickness direction z is the same as the dimension of each columnar portion 271 along the thickness direction z. Note that the dimension of the columnar portion 272 joined to the insulating film 26 along the thickness direction z may be increased by the thickness of the first wiring portion 24, or the thickness of the insulating bonding material 229b joining the columnar portion 272 may be increased.

[0093] 11, each of the columnar portions 271, 272 is joined onto either the first wiring portion 24 or the second wiring portion 25 by a conductive bonding material 229a or an insulating bonding material 229b, but instead of this configuration, each of the columnar portions 271, 272 may be formed integrally with either the first wiring portion 24 or the second wiring portion 25. Each of such columnar portions 271, 272 can be formed by, for example, electrolytic plating.

[0094] In the electronic component 2B, the dimension along the thickness direction z of the first substrate 21 is preferably about several tens of μm (less than 100 μm). This makes it possible to prevent the dimension along the thickness direction z of the electronic component 2B from becoming large, thereby enabling the electronic component 2B to be miniaturized.

[0095] The electronic component 2B can also achieve the same effects as the electronic component 2A. Therefore, the electronic component 2B can increase the distance between the first coil 210 and the second coil 220, thereby improving the dielectric strength voltage.

[0096] The electronic component 2B includes a plurality of columnar portions 271, 272. This allows the second substrate 22 to be disposed above the first substrate 21 in the thickness direction z even if the supporting member 23 does not have a recess 231 formed therein.

[0097] Figures 12 and 13 show a semiconductor device A3 according to the third embodiment. Compared to the semiconductor device A1, the semiconductor device A3 includes an electronic component 2C instead of the electronic component 2A. Figure 12 is a plan view showing the semiconductor device A3 and corresponds to Figure 2. Figure 13 is a cross-sectional view showing a detailed configuration example of the electronic component 2C and corresponds to Figure 9.

[0098] 13, electronic component 2C is different from electronic component 2A mainly in that first substrate 21 further includes first protective film 215 and first electrode 216, and second substrate 22 further includes second protective film 226 and second electrode 227.

[0099] The first protective film 215 covers the first main surface 211a and also covers a part of the wiring layer 212. From the first protective film 215, the first terminal portion 213 and the first pad portion 214 of the wiring layer 212 are exposed.

[0100] The first electrode 216 penetrates the first protective film 215 in the thickness direction z, and is in contact with either the first terminal portion 213 or the first pad portion 214. The first electrode 216 in contact with the first terminal portion 213 is conductively joined to the first wiring portion 24 via a conductive bonding material 219a. The first electrode 216 in contact with the first pad portion 214 is joined to the first wiring portion 24 or the bottom surface 231a via an insulating bonding material 219b.

[0101] The second protective film 226 covers the second main surface 221a and also covers a part of the wiring layer 222 (first wiring layer 222A). From the second protective film 226, the second terminal portion 224 and the second pad portion 225 of the wiring layer 222 are exposed.

[0102] The second electrode 227 penetrates the second protective film 226 in the thickness direction z, and is in contact with either the second terminal portion 224 or the second pad portion 225. The second electrode 227 in contact with the second terminal portion 224 is conductively joined to the second wiring portion 25 via a conductive bonding material 229a. The second electrode 227 in contact with the second pad portion 225 is joined to either the second wiring portion 25 or the third principal surface 23a via an insulating bonding material 229b.

[0103] The electronic component 2C can also achieve the same effects as the electronic components 2A and 2B. Therefore, the electronic component 2B can increase the distance between the first coil 210 and the second coil 220, thereby improving the dielectric strength voltage.

[0104] In electronic component 2C, first substrate 21 includes first protective film 215. With this configuration, wiring layer 212 is covered with first protective film 215, and therefore wiring layer 212 can be protected. Similarly, second substrate 22 includes second protective film 226. With this configuration, wiring layer 222 (first wiring layer 222A) is covered with second protective film 226, and therefore wiring layer 222 (first wiring layer 222A) can be protected.

[0105] Figures 14 and 15 show a semiconductor device A4 according to the fourth embodiment. Compared to the semiconductor device A1, the semiconductor device A4 includes an electronic component 2D instead of the electronic component 2A. Figure 14 is a plan view showing the semiconductor device A4 and corresponds to Figure 2. Figure 15 is a cross-sectional view of the electronic component 2D and corresponds to Figure 9.

[0106] The electronic component 2D is different from the electronic component 2A mainly in the following respect: the electronic component 2D includes a resin member 28 that covers at least the first substrate 21 and the second substrate 22. Note that, although the example shown in Fig. 15 shows an example in which the resin member 28 is further provided on the electronic component 2A, the electronic component 2B may also be configured to further include the resin member 28.

[0107] Resin member 28 is formed on third main surface 23a of support member 23, and covers first substrate 21, second substrate 22, first wiring portion 24, and second wiring portion 25. Resin member 28 is made of, for example, epoxy resin. In the example shown in FIG. 15, resin member 28 is filled between first substrate 21 and second substrate 22. Unlike the example shown in FIG. 15, there may be a gap between first substrate 21 and second substrate 22. However, if there is a concern about the influence of temperature cycles (such as air expansion in the gap), it is advisable to cover with resin member 28 as shown in FIG. 15.

[0108] As shown in FIG. 15, an electronic component 2D includes a plurality of through electrodes 291, 292 that penetrate a resin member 28 in the thickness direction z.

[0109] Each of the plurality of through electrodes 291 electrically connects the first wiring portion 24 to each of the pads 201. Each of the through electrodes 291 is disposed on the first wiring portion 24. An upper end of each of the through electrodes 291 in the thickness direction z is exposed from the resin member 28. Each of the pads 201 is formed in the portion exposed from the resin member 28.

[0110] Each of the plurality of through electrodes 292 electrically connects the second wiring portion 25 to each of the pads 202. Each of the through electrodes 292 is disposed on the second wiring portion 25. An upper end of each of the through electrodes 292 in the thickness direction z is exposed from the resin member 28. Each of the pads 202 is formed in the portion exposed from the resin member 28.

[0111] The electronic component 2D can also achieve the same effects as the electronic components 2A to 2C. Therefore, the electronic component 2B can increase the distance between the first coil 210 and the second coil 220, thereby improving the dielectric strength voltage.

[0112] The electronic component 2D includes a resin member 28. This makes it possible to further protect the first substrate 21, the second substrate 22, the first wiring portion 24, and the second wiring portion 25.

[0113] In the fourth embodiment, the formation range of the resin member 28 is not limited to the example shown in Fig. 15. For example, as shown in Fig. 16, the resin member 28 may be formed so as to cover the first substrate 21 and the second substrate 22, with parts of the first wiring portion 24 and the second wiring portion 25 being exposed.

[0114] In the first to fourth embodiments, the electronic components 2A to 2D may be arranged with the second substrate 22 upside down. For example, FIG. 17 shows an example in which the second substrate 22 is arranged upside down in the electronic component 2B. In the example shown in FIG. 17, the second base material 221 is arranged so that the second main surface 221a faces upward in the thickness direction z and the second back surface 221b faces downward in the thickness direction z. In this case, since the second terminal portions 224 are located upward, it is difficult to electrically connect the second terminal portions 224 and the second wiring portion 25 through the columnar portions 271. Therefore, in the example shown in FIG. 17, the second terminal portions 224 and the second wiring portion 25 are electrically connected through the wire 293. In the example shown in FIG. 17, both the first base material 211 and the second base material 221 are arranged between the first coil 210 and the second coil 220. Therefore, in the electronic component shown in FIG. 17, the distance between first coil 210 and second coil 220 can be further increased, and therefore the dielectric strength is further improved.

[0115] In the first to fourth embodiments, the first and second substrates 21 and 22 of the electronic components 2A to 2D may be in contact with each other without any gap between them. For example, FIG. 18 shows an example in which the first and second substrates 21 and 22 are stacked without any gap between them in the electronic component 2A. The other electronic components 2B to 2D may have a similar configuration, instead of the electronic component 2A. In the electronic component shown in FIG. 18, the surface (first main surface 211a) of the first substrate 21 on the upper side in the thickness direction z is in contact with the surface of the second substrate 22 on the lower side in the thickness direction z. For example, such a configuration can be achieved by increasing the thickness of the first base material 211 of the first substrate 21.

[0116] In the first to fourth embodiments, the first base material 211 of the first substrate 21 of each of the electronic components 2A to 2D may be made of silicon instead of glass. That is, the first substrate 21 may be made of a silicon substrate instead of a glass substrate. In this case, the first substrate 21 has the same configuration as the second substrate 22. However, when the first substrate 21 is a glass substrate, the withstand voltage between the first coil 210 and the second coil 220 is higher than when the first substrate 21 is a silicon substrate. Also, in each of the electronic components 2A to 2D, the second base material 221 of the second substrate 22 may be made of glass instead of silicon. That is, the second substrate 22 may be made of a glass substrate instead of a silicon substrate. Also, the second base material 221 of the second substrate 22 may be made of an insulating semiconductor material such as intrinsic semiconductor silicon or insulated silicon. When the second base material 221 is made of an insulating material such as glass, the insulating film 228 may not be provided.

[0117] Fig. 19 and Fig. 20 show a semiconductor device A5 according to the fifth embodiment. In the example shown in Fig. 19 and Fig. 20, the semiconductor device A5 includes an electronic component 2A similar to the semiconductor device A1, but may include any of the above electronic components 2B to 2D instead of the electronic component 2A. Fig. 19 is a plan view showing the semiconductor device A5 and corresponds to Fig. 2. Fig. 20 is a cross-sectional view taken along the line XX-XX in Fig. 19 and corresponds to Fig. 6.

[0118] The semiconductor device A5 is different from the semiconductor device A1 mainly in the following respect: as shown in Figures 19 and 20, the electronic component 2A is mounted on the second lead 32 (second island portion 321) instead of the first lead 31 (first island portion 311).

[0119] In the example shown in FIG. 19 and FIG. 20, the electronic component 2A is arranged in a left-right reversed manner, and each pad 201 is located closer to the second semiconductor element 12 in the first direction x than each pad 202. As shown in FIG. 20, it is preferable that each pad 201 and each pad 121 are connected by the second wire 42, and each pad 202 and each pad 111 are connected by the first wire 41. As a result, the first coil 210 (first substrate 21) is electrically connected to the second semiconductor element 12, and the second coil 220 (second substrate 22) is electrically connected to the first semiconductor element 11, so that the potential of the first substrate 21 and the potential of the second lead 32 become the same. As a result, in the semiconductor device A5, by making the first wiring portion 24 and the second island portion 321 the same potential, it is possible to suppress dielectric breakdown of the support member 23. That is, when the electronic component 2A is mounted on the second island portion 321, the semiconductor device A2 has a structure that is preferable for improving the withstand voltage of the semiconductor device A2.

[0120] The semiconductor device A5 also includes the electronic component 2A, similar to the semiconductor device A1, and therefore has improved dielectric strength, similar to the semiconductor device A1.

[0121] The electronic component and semiconductor device according to the present disclosure are not limited to the above-mentioned embodiments. The specific configurations of the components of the electronic component and semiconductor device according to the present disclosure can be freely designed in various ways. For example, the electronic component and semiconductor device according to the present disclosure include the following embodiments. [Appendix 1] a first substrate having a first base material and a first coil, the first coil being electrically insulated from the first base material; a second substrate having a second substrate and a second coil, the second coil being electrically insulated from the second substrate; a support member for supporting the first substrate and the second substrate; It is equipped with the first substrate is disposed between the second substrate and the support member in a thickness direction of the support member, and overlaps the second substrate as viewed in the thickness direction; the first base material is located between the first coil and the second coil in the thickness direction, The first coil and the second coil are magnetically coupled to each other. [Appendix 2] the first base material has a first main surface and a first back surface spaced apart in the thickness direction; The first main surface faces the support member, the first back surface faces the second substrate, 2. The electronic component of claim 1, wherein the first coil is formed on the first main surface. [Appendix 3] the first substrate further includes a first protective film and a first electrode; the first protective film is formed on the first main surface and covers the first coil; 3. The electronic component of claim 2, wherein the first electrode penetrates the first protective film and is electrically connected to the first coil. [Appendix 4] 4. The electronic component according to claim 2, wherein the first base material includes glass as a constituent material. [Appendix 5] the second base material has a second main surface and a second back surface spaced apart in the thickness direction; 5. The electronic component according to claim 1, wherein the second main surface faces the first substrate. [Appendix 6] the second substrate further includes a plurality of wiring layers laminated with an interlayer insulating film therebetween; 6. The electronic component according to claim 5, wherein the plurality of wiring layers are formed on the second main surface. [Appendix 7] the plurality of wiring layers includes a first wiring layer having the second coil; 7. The electronic component of claim 6, wherein the first wiring layer is a surface layer of the plurality of wiring layers that is closer to the first base material in the thickness direction. [Appendix 8] the second substrate further includes a second protective film and a second electrode; the second protective film is formed on the first wiring layer and covers the second coil; 8. The electronic component of claim 7, wherein the second electrode penetrates the second protective film and is electrically connected to the second coil. [Appendix 9] the second base material contains silicon as a constituent material; 9. The electronic component according to claim 5, wherein the second substrate further has an insulating film interposed between the second base material and the plurality of wiring layers in the thickness direction. [Appendix 10] 10. The electronic component according to claim 1, wherein the first substrate and the second substrate are spaced apart in the thickness direction. [Appendix 11] The wiring device further includes a first wiring portion and a second wiring portion, each of which is formed on the support member and spaced apart from each other; the first wiring portion is electrically connected to the first coil, 11. The electronic component according to claim 1, wherein the second wiring portion is electrically connected to the second coil. [Appendix 12] The electronic component of claim 11, further comprising an insulating film formed between the support member and each of the first wiring portion and the second wiring portion. [Appendix 13] The support member has a third main surface facing one side in the thickness direction, the second wiring portion is formed on the third main surface, 13. The electronic component of claim 11, wherein the second substrate is located on the third main surface. [Appendix 14] a conductive columnar portion joined to the second wiring portion and extending in the thickness direction; the first wiring portion is further formed on the third main surface, the first substrate is bonded to the first wiring portion, the second substrate is bonded to the columnar portion, 14. The electronic component of claim 13, wherein a dimension of the columnar portion along the thickness direction is greater than a dimension of the first substrate along the thickness direction. [Appendix 15] the support member has a recess recessed from the third main surface, the first wiring portion is formed so as to be continuous from the third main surface to the recessed portion, the first substrate is bonded to a portion of the first wiring portion that is formed in the recess, 14. The electronic component of claim 13, wherein the second substrate is joined to the second wiring portion. [Appendix 16] 16. The electronic component according to claim 11, wherein the support member includes silicon as a constituent material. [Appendix 17] An electronic component according to any one of Supplementary Note 1 to Supplementary Note 16; a conductive support member including a first island portion and a second island portion spaced apart in a direction perpendicular to the thickness direction; a first semiconductor element mounted on the first island portion and constituting a first circuit; a second semiconductor element mounted on the second island portion and constituting a second circuit; a sealing resin that covers the electronic component, the first island portion, the second island portion, the first semiconductor element, and the second semiconductor element, the first coil is electrically connected to the first semiconductor element, and the second coil is electrically connected to the second semiconductor element, the first circuit and the second circuit are electrically insulated by the electronic component. [Appendix 18] 18. The semiconductor device according to claim 17, wherein the electronic component is mounted on the first island portion. [Explanation of symbols]

[0122] A1 to A5: Semiconductor device 11: First semiconductor element 111: Pad 12: Second semiconductor element 121: Pad 2A~2D: Electronic parts 201, 202: Pad 21: First board 210: First coil 211: 1st base material 211a: 1st principal surface 211b: 1st back side 212: Wiring layer 213: 1st terminal section 214: First pad section 215: 1st protective film 216: 1st electrode 219a: Conductive bonding material 219b: Insulating bonding material 22: Second board 220: Second coil 221:Second base material 221a: 2nd principal surface 221b: 2nd back side 222: Wiring layer 222A: 1st wiring layer 222B: 2nd wiring layer 223: Interlayer insulating film 224: 2nd terminal section 225: Second pad section 226:Second protective film 227:Second electrode 228: Insulating film 229a: Conductive bonding material 229b: Insulating bonding material 23: Support member 23a: Third main surface 23b: 3rd back side 231: Recess 231a: Bottom 231b: Inclined surface 24: 1st wiring section 25: 2nd wiring section 26: Insulating film 271,272: Columnar part 28: Resin material 291,292:Through electrode 293: Wire 3: Conductive support member 31: First lead 311: Island No. 1 311a: 1st mounting surface 312: 1st terminal part 312a: Covering part 312b: Exposed part 313:Through hole 32: 2nd lead 321: Second Island 321a: 2nd mounting surface 322: 2nd terminal section 322a: Covering part 322b:Exposed part 33: 3rd lead 33A: Intermediate lead 33B: Side lead 331: Covering part 332 :Exposed part 34: 4th lead 34A: Intermediate lead 34B: Side lead 341: Covering part 342 :Exposed part 4: Connection parts 41: First wire 42: Second wire 43: 3rd wire 44: 4th wire 45: 5th wire 46: 6th wire 5: Sealing resin 51:Top surface 52: Bottom 53 :1st side 54:Second side 531: First upper part 532: 1st Lower Section 533: First intermediate section 541: 2nd upper part 542: Second Lower Section 543: Second intermediate section

Claims

1. a first substrate having a first base material and a first coil, the first coil being electrically insulated from the first base material; a second substrate having a second substrate and a second coil, the second coil being electrically insulated from the second substrate; a support member for supporting the first substrate and the second substrate; Equipped with the first substrate is disposed between the second substrate and the support member in a thickness direction of the support member and overlaps the second substrate as viewed in the thickness direction; the first base material is located between the first coil and the second coil in the thickness direction, the first coil and the second coil are magnetically coupled, The first substrate and the second substrate are spaced apart in the thickness direction. Electronic components.

2. the first base material has a first main surface and a first back surface spaced apart in the thickness direction; The first main surface faces the support member, the first back surface faces the second substrate, The first coil is formed on the first main surface. The electronic component according to claim 1 .

3. the first substrate further includes a first protective film and a first electrode; the first protective film is formed on the first main surface and covers the first coil; The first electrode penetrates the first protective film and is electrically connected to the first coil. The electronic component according to claim 2 .

4. The first base material contains glass as a constituent material. The electronic component according to claim 2 or 3.

5. the second base material has a second main surface and a second back surface spaced apart in the thickness direction; The second main surface faces the first substrate. The electronic component according to claim 1 .

6. the second substrate further includes a plurality of wiring layers laminated with an interlayer insulating film therebetween; The plurality of wiring layers are formed on the second main surface. The electronic component according to claim 5 .

7. the plurality of wiring layers includes a first wiring layer having the second coil, The first wiring layer is a surface layer of the plurality of wiring layers that is closer to the first base material in the thickness direction. The electronic component according to claim 6.

8. the second substrate further includes a second protective film and a second electrode; the second protective film is formed on the first wiring layer and covers the second coil; The second electrode penetrates the second protective film and is electrically connected to the second coil. The electronic component according to claim 7.

9. the second base material contains silicon as a constituent material; The second substrate further includes an insulating film interposed between the second base material and the plurality of wiring layers in the thickness direction. The electronic component according to any one of claims 6 to 8.

10. The wiring device further includes a first wiring portion and a second wiring portion, each of which is formed on the support member and spaced apart from each other; The first wiring portion is electrically connected to the first coil, The second wiring portion is electrically connected to the second coil. The electronic component according to any one of claims 1 to 9.

11. further comprising an insulating film formed between the support member and each of the first wiring portion and the second wiring portion. The electronic component according to claim 10.

12. The support member has a third main surface facing one side in the thickness direction, the second wiring portion is formed on the third main surface, The second substrate is located on the third major surface. The electronic component according to claim 10 or 11.

13. a conductive columnar portion joined to the second wiring portion and extending in the thickness direction; the first wiring portion is further formed on the third main surface, the first substrate is bonded to the first wiring portion, the second substrate is bonded to the columnar portion, A dimension of the columnar portion along the thickness direction is greater than a dimension of the first substrate along the thickness direction. The electronic component according to claim 12.

14. The support member has a recess recessed from the third main surface, the first wiring portion is formed so as to be continuous from the third main surface to the recessed portion, the first substrate is bonded to a portion of the first wiring portion that is formed in the recess, The second substrate is joined to the second wiring portion. The electronic component according to claim 12.

15. The support member includes silicon as a constituent material. The electronic component according to any one of claims 11 to 14.

16. An electronic component according to any one of claims 1 to 15; a conductive support member including a first island portion and a second island portion spaced apart in a direction perpendicular to the thickness direction; a first semiconductor element mounted on the first island portion and constituting a first circuit; a second semiconductor element mounted on the second island portion and constituting a second circuit; a sealing resin that covers the electronic component, the first island portion, the second island portion, the first semiconductor element, and the second semiconductor element, the first coil is electrically connected to the first semiconductor element, and the second coil is electrically connected to the second semiconductor element, The first circuit and the second circuit are electrically insulated by the electronic component. Semiconductor device.

17. The electronic component is mounted on the first island portion. The semiconductor device according to claim 16.

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