Power storage device

Abstract

To enhance the versatility of a power supply device.SOLUTION: An electrical apparatus includes a power storage device 1113 and a power supply device 1300. The power storage device having data for identifying the power storage device includes: a power storage body; a switch that controls whether or not to supply power supplied from the power supply device to the power storage body; and a control circuit having the function of controlling a conduction state of the switch in response to a control signal that is input from the power supply device. The power supply device has a signal processing circuit having the function of identifying the power storage device based on the data that is input from the power storage device and generating the control signal and outputting the generated control signal to the power storage device.SELECTED DRAWING: Figure 22

Description

[Technical field]

[0001] The present invention relates to a product, a machine, a manufacture, a composition, etc. Position of matter) and methods (processes. Simple methods and production methods) In particular, one embodiment of the present invention relates to a power storage system, a power storage device, a semiconductor device, a display device, and a power storage device. In particular, the present invention relates to a display device, a light-emitting device, or other electrical equipment, or a manufacturing method thereof. One embodiment of the present invention relates to a power storage system, a power storage device, a semiconductor device, and a display device each including an oxide semiconductor. The present invention relates to a semiconductor device, a light-emitting device, or other electrical equipment, or a method for manufacturing the same. [Background technology]

[0002] In recent years, various types of electronic devices, such as mobile phones and smartphones, power tools, and electric vehicles, have become available. The electrical appliance is equipped with a power storage device.

[0003] The storage device is a device that stores electricity by charging it, such as a lithium-ion battery, and can be used repeatedly. The device has a secondary battery capable of

[0004] In an electrical device equipped with such a power storage device, the power storage device can be connected to a power supply device, for example. It is possible to charge electrical devices (for example, Patent Document 1).

[0005] Furthermore, in the electrical equipment equipped with the power storage device, power is supplied wirelessly from a power supply device. This allows the storage device to be charged without being physically connected to a power supply device ( For example, Patent Document 2 describes such a power supply method. A power supply method using magnetic resonance is also disclosed.

[0006] The power supply methods shown in Patent Documents 1 and 2 use a power supply device that is compatible with the specifications of the power storage device. This allows the power storage device to be charged. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] JP 2010-109778 A [Patent Document 2] JP 2012-125115 A Summary of the Invention [Problem to be solved by the invention]

[0008] An object of one embodiment of the present invention is to improve the versatility of a power feeding device.

[0009] Another object of one embodiment of the present invention is to improve the versatility of a power storage system using a power feeding device. It shall be one of the following.

[0010] Another object of one embodiment of the present invention is to reduce power consumption of a power storage device.

[0011] Another object of one embodiment of the present invention is to improve the reliability of a power storage device.

[0012] Another object of one embodiment of the present invention is to provide a novel power storage device. An object of one embodiment of the present invention is to provide a good power storage device.

[0013] An object of one embodiment of the present invention is to provide a semiconductor device with low off-state current. An object of one embodiment of the present invention is to provide a semiconductor device with low power consumption. An object of one embodiment of the present invention is to provide a semiconductor device using a transparent semiconductor layer. An object of one embodiment of the present invention is to provide a semiconductor device including a highly reliable semiconductor layer.

[0014] In particular, one embodiment of the present invention can solve at least one of the above problems. Note that it is not necessary for one embodiment of the present invention to solve all of these problems. Problems other than these will be obvious from the description, drawings, claims, etc. Other issues can be extracted from the description, drawings, claims, etc. It is possible. [Means for solving the problem]

[0015] In one embodiment of the present invention, for example, at least one of a power storage device and a power supply device is used. It is also possible.

[0016] In one embodiment of the present invention, data for identifying a power storage device (also referred to as identification data) is used to identify the power storage device. By optimizing the charging conditions of the device, for example, This enables charging of electrical devices, improving versatility.

[0017] In this specification, data for identifying the power storage device includes mechanical characteristics of the power storage device, The specifications of the storage device, such as the electrical characteristics of the device, the degree of deterioration, the remaining amount of stored electrical energy, etc. The information on the power storage device includes, for example, the average Voltage, capacity of the power storage device, energy density of the power storage device, resistance of the power storage device, output voltage of the power storage device power, cycle characteristics of the power storage device, temperature of the power storage device, operating temperature range of the power storage device, allowable temperature of the power storage device The information on the storage device may include the information on the manufacturer of the storage device. The information may include the serial number of the power storage device, the weight of the power storage device, the size of the power storage device, etc. The identification data may be individual identification data.

[0018] One embodiment of the present invention includes a power storage device and a power feeding device. The power storage device has data, and the power storage device supplies the power supplied from the power supply device to the power storage device. and a switch that controls whether the power supply is turned on or off according to a control signal input from a power supply device. and a control circuit having a function of controlling a state of the power supply device. A signal processing device having a function of identifying a power storage device by data, generating a control signal, and outputting the control signal to the power storage device. The present invention relates to a power storage system having a signal processing circuit.

[0019] One embodiment of the present invention is a power storage device including a power receiving circuit, a data communication circuit, a power storage unit, and a power receiving A first transistor provided between the circuit and a power storage unit, and a gate of the power storage unit and the first transistor a control circuit electrically connected to the gate of the first transistor, the control circuit a processor electrically connected to the processor; a memory electrically connected to the processor; and a controller electrically connected to the processor and the memory, the memory storing the power storage device. The processor has a register, and the register stores data for identifying the processor from the storage device. a first memory circuit for storing data during a period when power is supplied to the processor; a second memory circuit that holds data during a period when the supply of power to the memory device is stopped; The second memory circuit has a second transistor that controls writing and holding of data. The transistor is a power storage device having an off-state current of 100 zA or less per 1 μm of channel width. It is. Effect of the Invention

[0020] According to one embodiment of the present invention, versatility of a power supply device or a power storage system using the power supply device can be improved. It is possible.

[0021] According to one embodiment of the present invention, the power consumption of a power storage device can be reduced.

[0022] According to one embodiment of the present invention, the reliability of a power storage device can be improved. [Brief description of the drawings]

[0023] [Figure 1] 1A and 1B are diagrams for explaining examples of power storage systems. [Diagram 2] FIG. 1 is a diagram for explaining an example of an apparatus. [Diagram 3] FIG. 1 is a diagram for explaining an example of a circuit. [Figure 4] FIG. 1 is a diagram for explaining an example of an apparatus. [Diagram 5] 1A to 1C are diagrams illustrating an example of a method for driving a power storage system. [Figure 6] FIG. 1 is a diagram for explaining an example of a circuit. [Figure 7] FIG. 13 is a diagram for explaining an example of a register. [Figure 8] FIG. 1 is a diagram for explaining an example of a memory. [Figure 9] FIG. 2 is a diagram for explaining a structural example of the device. [Figure 10] 1A to 1C are diagrams illustrating examples of power storage units. [Figure 11] 1A to 1C are diagrams illustrating examples of power storage units. [Figure 12] 1A to 1C are diagrams illustrating examples of power storage units. [Figure 13] 1A to 1C are diagrams illustrating examples of power storage units. [Figure 14] 1A and 1B are diagrams illustrating examples of a part of a power storage unit. [Figure 15] 1A and 1B are diagrams illustrating examples of a part of a power storage unit. [Figure 16] 1A and 1B are diagrams illustrating examples of a part of a power storage unit. [Figure 17] 1A to 1C are diagrams illustrating examples of power storage units. [Figure 18] 1A and 1B are diagrams for explaining examples of electrical devices. [Figure 19] 1A and 1B are diagrams for explaining examples of electrical devices. [Figure 20] 1A and 1B are diagrams for explaining examples of electrical devices. [Figure 21] 1A and 1B are diagrams for explaining examples of electrical devices. [Figure 22] 1A and 1B are diagrams for explaining examples of electrical devices. [Diagram 23] 1A and 1B are diagrams for explaining examples of electrical devices. [Figure 24] 1A and 1B are diagrams for explaining examples of electrical devices. [Diagram 25] 5A and 5B show charge and discharge characteristics of a power storage device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0024] Hereinafter, an embodiment will be described with reference to the drawings. However, the embodiment may be different from the embodiment. The present invention can be implemented in any manner without departing from the spirit and scope of the present invention. It will be readily apparent to those skilled in the art that various modifications may be made to the details of the present invention. The present invention is not limited to the description of the embodiment shown in the accompanying drawings. The reference numerals indicating the same parts or parts having similar functions are used in different drawings. A detailed description of the relevant parts will be omitted.

[0025] In addition, the contents (or even a part of the contents) described in one embodiment may be used in the embodiment. Another content (or a part of the content) described in the embodiment, and / or one or more other embodiments The application, combination, or replacement of the contents (or part of the contents) described in the form etc. can be carried out.

[0026] The contents described in the embodiments are explained in detail with reference to various figures in each embodiment. This refers to the content that is stated or stated using the text in the specification.

[0027] In addition, a figure (or a part thereof) described in one embodiment may be different from another part of the figure, Another figure (or a part thereof) described in the embodiment, and / or one or more By combining with the figure (or a part of it) described in another embodiment of the present invention , more diagrams can be constructed.

[0028] In this specification, the terms "active elements" and "passive elements" are used interchangeably. For all terminals of devices (capacitive elements, resistive elements, etc.), the connection destination is not specified. However, a person skilled in the art may be able to configure one aspect of the invention. Even if the prior art is not specified, it is possible to determine that one aspect of the invention is clear and described in the present specification, etc. In particular, when a terminal has multiple connections, it may be possible to There is no need to limit it to a specific location. Therefore, active elements (transistors, diodes, etc.) ), passive elements (capacitive elements, resistive elements, etc.) By specifying the connection, it may be possible to constitute one aspect of the invention.

[0029] In addition, regarding the contents not specified in the drawings or text in the specification, Or, an invention can be created that specifies a certain value by specifying an upper limit and a lower limit. When a numerical range is listed, the numerical range may be arbitrarily narrowed or any part of the numerical range may be included. By excluding the above points, the invention can be defined by excluding some of the numerical ranges. It is possible to provide that prior art does not fall within the technical scope of the present invention.

[0030] In this specification and the like, if at least the connection destination of a certain circuit is specified, it is understood by those skilled in the art that If you are a person who has experience in the field of electronics, you may be able to identify the invention. In some cases, a person skilled in the art can identify the invention by specifying the function. If the function is specified, it is determined that one aspect of the invention is clear and described in the specification, etc. Therefore, it may be possible to determine the connection of a circuit without specifying its function. If the above is specified, it is disclosed as one aspect of the invention and constitutes one aspect of the invention. Or, it is possible to specify the function of a circuit without specifying the connection destination. If the above is the case, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. It is Noh.

[0031] In addition, ordinal numbers such as 1st and 2nd are used to avoid confusion between components. The number is not limited to ordinal numbers.

[0032] (Embodiment 1) FIG. 1(A) is a diagram showing a configuration example of a power storage system. The power storage system shown in FIG. , device 100 and device 200.

[0033] The device 100 is supplied with power from the device 200. Note that the device 100 may be supplied with power from a separate power source. The device 100 may provide a force to the actuator. The device 100 has a function to input and output a signal. The device 10 may have a function to wirelessly receive power. Alternatively, the device 100 may be a power receiving device. In this case, the device 100 may be a power storage device. The device may have a function of receiving electricity and a function of storing electricity. In this case, the device 100 may be a power receiving device, a power storage device, or a semiconductor device. A protection circuit having a function of preventing the device 100 from being destroyed due to overcharging and over-discharging. A path may be provided.

[0034] The device 100 has data 110. The data 110 is data for identifying the device 100. For example, the device 100 is provided with a memory, and the memory stores data 110. The data 110 may be identification data.

[0035] The device 200 is powered by an external power source 240 (see FIG. 4). For example, a commercial power source may be used. The device 200 has a function capable of supplying power to the device 100. The device 200 has a function of inputting and outputting a signal. In this case, the device 200 may have a function of wirelessly transmitting power. Alternatively, the device 200 may have a function of supplying power from a power storage device. In this case, the device 200 may be a power supply device. and a function to supply power to a power storage device. In this case, the device 200 may be a power transmitting device, a power supplying device, or a semiconductor device. stomach.

[0036] In the power storage system shown in FIG. 1A, power is supplied wirelessly from the device 200 to the device 100. In the power storage system shown in FIG. 1A, the device 200 and the device 1 00. Thus, the device 200 and the device 100 can be connected in a non-contact manner. In addition, the present invention is not limited to this, and as shown in FIG. 1(B), By connecting the device 100 to the device 200, power is supplied from the device 200 to the device 100. Alternatively, the device 100 may be connected to the device 200, so that the device 200 and the device 10 0.

[0037] When supplying power or signals wirelessly, radio waves in the 13.56 MHz band, for example, are used. However, the present invention is not limited to this, and examples thereof include 135 kHz band, 433 MHz band, 95 Radio waves in the 2 MHz band or 2.45 GHz band may also be used.

[0038] Furthermore, when supplying power wirelessly, for example, electromagnetic induction, electric field resonance, magnetic field resonance, etc. A thermal method, a microwave method, or the like can be used.

[0039] In addition, the term "connected" refers to an electrical connection, a functional connection, or a direct connection. Furthermore, the connection relationships of the components shown in the embodiment may be different from those shown in the drawings or text. The relationship is not limited to the continuity relationship.

[0040] For example, if two objects are to be electrically connected, another element that can be electrically connected (e.g. , switches, transistors, inductors, resistor elements, diodes, display elements, light-emitting elements, A load, etc. may be provided between the two objects.

[0041] If two objects are functionally connected, then another circuit that can be functionally connected (e.g. Logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion circuits (DA conversion circuits , AD conversion circuit, gamma correction circuit, etc.), or potential level conversion circuit (power supply circuit (booster circuit , step-down circuits, or level shifter circuits), voltage sources, current sources, switching circuits, amplifiers Circuits (op-amps, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation A circuit, a memory circuit, or a control circuit, etc., may be provided between the two objects.

[0042] The switch is in a conductive state (ON state) or a non-conductive state (OFF state), and the current It has a function to control whether or not current flows, or a function to select and switch the path through which current flows. For example, a switch may be used to allow current to flow through a first path or to It has the function of selecting and switching whether to allow current to flow through the path.

[0043] Next, a configuration example of the device 100 will be described with reference to the circuit diagrams of FIGS. 2(A) and 2(B). .

[0044] The power storage unit 111 has a power storage function. The power storage unit 111 has a pair of terminals. One of the transistors includes, for example, the transistor 131, the transistor 132, and the transistor 170. The other end is connected to the terminal b of the device 100 via the power storage unit 101, and the other end is connected to the terminal d. 11 is provided with two or more terminals, and power is supplied from an external power source through the terminals, The electric body 111 may be charged.

[0045] The storage battery 111 may be a lithium ion battery, a lead acid battery, a lithium ion poly nickel-iron secondary battery, nickel-metal hydride battery, nickel-cadmium battery, Nickel-zinc storage batteries, silver oxide-zinc storage batteries and other secondary batteries, redox flow batteries, zinc - Liquid circulation type secondary batteries such as chlorine batteries and zinc-bromine batteries, aluminum-air batteries, and air-zinc batteries Batteries, mechanical charge type secondary batteries such as air and iron batteries, sodium-sulfur batteries, lithium A high-temperature operating secondary battery such as an aluminum iron sulfide battery can be used. Alternatively, the power storage unit 111 may be formed using, for example, a lithium ion capacitor.

[0046] One of the source and drain of the transistor 132 is connected to the power storage unit 111, and the other is The transistor 131 and the transistor 131 are connected to one of the source and drain of the transistor 131. The transistor 132 has a function of controlling charging and discharging of the power storage unit 111. The transistor 131 and the transistor 132 prevent, for example, overcharging and overdischarging of the power storage unit 111. Alternatively, the transistor 1 may function as a protection switch to prevent The transistor 132 adjusts the current flowing through the power storage unit 111 and the circuit 113. A circuit including the transistors 131 and 132 is The transistor 131 and the transistor 132 may be used as a protection circuit for controlling charging and discharging of the power storage unit 111. The transistor 132 may be a switch. 2 to configure a switch, when the switch is turned off, The current flowing due to the parasitic diodes generated in the transistors 131 and 132 is It should be noted that the present invention is not limited to the configurations shown in FIGS. 2(A) and 2(B), and examples thereof include For example, one transistor or three or more transistors may be used. Instead of the transistor 131 and the transistor 132, a bipolar transistor, a diode, or A logic circuit combining these may also be used.

[0047] The potentials of the gates of the transistors 131 and 132 are, for example, To be controlled.

[0048] The circuit 113 includes, for example, a transistor 131, a transistor 132, a transistor 150, The circuit 113 has a function of controlling the conduction state of the transistor 170. The circuit 113 has a function of monitoring a charging state of the power storage unit 111. Alternatively, the circuit 113 may be implemented as a microcomputer, an FPGA (Field Programmable Gate Array). Programmable Gate Array, or CPU (Central It may also be referred to as a Processing Unit.

[0049] The circuit 113 includes, for example, a memory, a processor, and a controller. For example, data 110 is stored. The processor generates a control signal based on the data 110. The controller has a function to control the memory and the processor. In addition, the memory stores, for example, program data required to operate the processor. The program data may be, for example, a program data signal input from the circuit 142. Thus, the transistors 131, 132, 150, and Examples include program data that causes a processor to control the potential of 170 gates. do.

[0050] The circuit 141 includes an antenna 114, a circuit 115, and a circuit 116. The circuit 141 has a function of receiving power wirelessly. This is also fine.

[0051] The antenna 114 may be an antenna circuit. It has capacity.

[0052] The circuit 115 rectifies the alternating current generated by receiving radio waves via the antenna 114. The circuit 115 may be a rectifier circuit. The path 115 may not be provided.

[0053] The circuit 116 has a function of smoothing the AC current rectified by the circuit 115 . The circuit 116 may be a regulator.

[0054] The transistor 150 is provided, for example, between the power storage unit 111 and the circuit 141. One of the source and drain of the transistor 150 is connected to the circuit 116, and the other is connected to the transistor The transistor 150 is connected to the other of the source and drain of the transistor 131. The power storage unit 111 has a function of controlling whether or not to charge the power storage unit 111 with the power received by the power storage unit 41. The transistor 150 may be a switch.

[0055] The potential of the gate of the transistor 150 is controlled by, for example, the circuit 113. The configuration is not limited to that shown in FIG. 2A and FIG. 2B. For example, a plurality of transistors may be used. Also, instead of the transistor 150, a bipolar transistor, a diode, or A logic circuit combining these may also be used.

[0056] The circuit 142 includes an antenna 118 and a circuit 119. The circuit 142 receives a data signal The circuit 142 may be a transmission / reception circuit. The circuitry 142 may be a data communications circuitry.

[0057] The antenna 118 may be an antenna circuit. It has capacity.

[0058] Note that instead of the antenna 114 and the antenna 118, one antenna is connected to the circuit 115 and the circuit You may also connect to 119.

[0059] The circuit 119 has a function of generating a data signal from radio waves received via the antenna 118. The circuit 119 includes functional circuits such as a rectifier circuit, a demodulator circuit, and a modulator circuit. Alternatively, the circuit 119 may include an analog baseband circuit and a digital baseband circuit. Alternatively, the circuit 119 may have an interface. The circuit 119 may be a signal generating circuit.

[0060] A carrier wave may be used as the radio wave. A carrier wave is an AC signal also called a carrier. Data signals are exchanged using this carrier wave. This also includes modulated radio waves (modulated waves).

[0061] The circuit 119 includes, for example, a circuit 191, an interface 192, and a circuit The signal processing circuit 190 includes a path 193 and a circuit 194.

[0062] The circuit 191 has a function of demodulating the received radio wave and extracting the data. 91 may be a demodulation circuit.

[0063] The interface 192 has a function of controlling the input and output of signals between the circuit 119 and the circuit 113. It should be noted that the interface 192 does not necessarily have to be provided.

[0064] The circuit 193 has a function of modulating a signal input via the interface 192. The circuit 193 may be a modulation circuit.

[0065] The circuit 194 has the function of amplifying the voltage of the modulated signal and conditioning the signal. The circuit 194 may be an amplifier circuit.

[0066] The circuit 121 has a function of smoothing the voltage output from the power storage unit 111. The circuit 121 may be used as a regulator.

[0067] The transistor 170 is connected to the transistor 131 and the transistor 132 as shown in FIG. As shown in FIG. 1B, the transistor 17 is provided between the load 143 and the power storage unit 111. One of the source and drain of transistor 131 is connected to the other of the source and drain of transistor 131. The transistor 170 controls the supply (discharge) of power from the power storage unit 111 to the load. The transistor 170 may be a switch.

[0068] The potential of the gate of the transistor 170 is controlled by the circuit 113. The configuration is not limited to that shown in FIG. 2B, and a plurality of transistors may be used, for example.

[0069] The device 100 has a function of outputting a power supply voltage V1 through terminals a and d. For example, a potential Va may be applied to the terminal d. For example, a potential Vd may be applied to the terminal d. For example, the potential Va may be set to a higher potential than the potential Vd. The terminal b has a function of outputting a power supply voltage V2 through the terminal d. For example, the potential Vb may be set to a potential higher than the potential Vd.

[0070] A control signal for controlling the circuit 113 can be input to the terminal c. For example, The number of terminals c is set according to the control signal. 2 C standard bus signals, etc. can be used.

[0071] The above is an example of the configuration of the device 100 shown in FIGS.

[0072] Next, a configuration example of the device 200 will be described with reference to FIG. 4(A) and FIG. 4(B).

[0073] The circuit 211 has a function of identifying the input data 110. The circuit 211 has a function of generating and outputting a signal based on the data 110. It may also be a signal processing circuit.

[0074] The circuit 211 includes, for example, a memory, a processor, and a controller. For example, the program data required to operate the processor may be stored. The data may be, for example, a program that causes a processor to adjust the amount of power depending on the identification data. Ram data, etc.

[0075] The circuit 230 includes an antenna 212, a circuit 213, a circuit 214, and a circuit 215. The circuit 230 is capable of generating a data signal from radio waves received via the antenna 212. The circuit 230 may be a transmission / reception circuit. It may also be a signal circuit.

[0076] The antenna 212 may be an antenna circuit. It has capacity.

[0077] The circuit 213 is connected to the antenna 212. The circuit 213 is, for example, The device has the function of demodulating the received radio waves and extracting the data signal. The data includes, for example, the data 110. Note that the circuit 213 is used as a demodulation circuit. Good too.

[0078] The circuit 214 is connected to the circuit 211. The circuit 214 receives, for example, The circuit 214 has a function of modulating a signal to be transmitted. Note that the circuit 214 may be a modulation circuit.

[0079] As the modulation method, for example, amplitude modulation, frequency modulation, phase modulation, etc. may be used. good.

[0080] The circuit 215 has the function of amplifying the modulated data signal and conditioning the data signal, for example. The circuit 215 may be an amplifier circuit. stomach.

[0081] The circuit 231 includes a circuit 221, a circuit 222, and an antenna 223. Alternatively, the circuit 231 may be a power transmission circuit. As shown, the device 200 may be provided with a sensor 235. The sensor 235 may measure displacement, position, Speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness temperature, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays. This allows the device 10 to measure, for example, It is also possible to determine whether or not there is a 0.

[0082] The circuit 221 has a function of oscillating an AC wave for supplying electric power, for example. 1 may be an oscillator circuit.

[0083] The circuit 222 has a function of amplifying and adjusting an AC wave, for example. Note that the circuit 222 is not necessarily provided.

[0084] The AC wave is output as a radio wave via an antenna 223. In this case, the antenna circuit has an antenna and a capacitance.

[0085] The device 200 may be powered, for example, from a utility power source.

[0086] Next, as an example of a method for driving the power storage system according to the present embodiment, the power storage system shown in FIG. An example of a method for driving the system will be described with reference to the flow chart of FIG. The configuration is as shown in FIG. 2(B), and the configuration of the device 200 is as shown in FIG. 4(A).

[0087] In the example of the method for driving the power storage system shown in FIG. 1(A), in step S1, a device is mounted using radio waves. The device 200 transmits a confirmation signal to the device 100. For example, the confirmation signal is transmitted once every few seconds. It is preferable to do so.

[0088] Next, in step S2, the device 100 receives a confirmation signal.

[0089] At this time, the confirmation signal is extracted by the circuit 119 included in the circuit 142, and the confirmation signal is The signal is output to a path 113.

[0090] Next, in step S3, the device 100 generates a response signal corresponding to the received confirmation signal. The received signal is then transmitted to the device 200.

[0091] At this time, the circuit 113 retrieves the necessary program data from the memory based on the data of the confirmation signal. The response signal includes a response code indicating that the device 100 is Identifying data 110 is also included.

[0092] As a response method by signals between the device 100 and the device 200, for example, ISO15693 For example, a method conforming to the ISO 14443 standard can be used. Use a method that complies with standards such as the IEEE 802.11a (Ear Field Communication) NFC standards include NFCIP-1 (ISO18092). can be done.

[0093] The response signal may be used to detect the location of the device 100. For example, the circuit 211 may be used The position of the device 100 can be detected by calculating the distance of the device 100 from the response signal. .

[0094] Furthermore, a radio wave including the response signal generated by the circuit 142 is transmitted to the device 200 .

[0095] Next, in step S4, the device 200 receives a response signal. Identify the data 110.

[0096] For example, the circuit 230 extracts a response signal from the received radio wave and transmits the extracted response signal to the circuit 2 Output to 11.

[0097] The circuit 211 identifies the device 100 from the data 110 contained in the input response signal. For example, data for identifying the device 100 is stored in advance in the memory, and the data and 110. Then, in step S5, the stored It is determined whether charging of the electric device 111 is necessary and possible.

[0098] When it is determined that charging is unnecessary or impossible, the operation of the circuit 231 is stopped. For example, Stopping the supply of power supply voltage to the circuit 231 using the controller of the circuit 211 This allows the operation of the circuit 231 to be stopped.

[0099] If it is determined that charging is necessary and possible, in step S6, the device 200 transfers the charge to the device 10. Start transmitting power to 0.

[0100] Even if it is determined that charging is necessary, the charge stored in the power storage unit 111 is zero. Instead, the charge required for the operation of the device 100, such as the power for operating the circuit 113, is stored in the storage capacitor. It is preferable that the ion exchange reaction is stored in 111.

[0101] At this time, the circuit 231 is started to operate, and an alternating current is transmitted to the device 100, thereby Provides power to 00.

[0102] In addition, depending on the data for identifying the device 100, for example, the frequency or amplitude of the AC to be transmitted may be changed. By changing the power consumption, the amount of power supplied to the device 100 can be optimized. The power supply time can be adjusted according to the capacity of the power storage unit 111 of the circuit. 211, the frequency of the AC to be transmitted can be controlled by controlling the conversion efficiency of the amplified AC. Or the amplitude, etc. can be changed.

[0103] Next, in step S7, the device 100 starts receiving power and starts charging the power storage unit 111. For example, the device 100 may be an electromagnetic induction type, an electric field resonance type, a magnetic field resonance type, or a micro Power can be received using a method such as a wave method.

[0104] The power supplied by the device 200 is regulated by the circuit 141. By turning on the transistor 131, the transistor 132, and the transistor 150, This causes the power storage unit 111 to be charged.

[0105] Next, in step S8, the voltage Vbt of the power storage unit 111 is increased to or exceeds the reference voltage Vref by charging. For example, the circuit 113 determines whether the voltage Vbt is equal to or lower than the reference voltage Vref. can be compared.

[0106] If it is determined that the voltage Vbt is less than the reference voltage Vref, the power storage unit 111 continues to be charged. do.

[0107] On the other hand, if it is determined that the voltage Vbt is equal to or higher than the reference voltage Vref, the transistor In step S9, the resistor 150 is turned off, and a voltage including a stop signal is output via the circuit 142. The wave is transmitted to the device 200. Note that if it is determined that the voltage Vbt is equal to or higher than the reference voltage Vref, Alternatively, the transistor 131 and the transistor 132 may be turned off. Overcharging of the electric body 111 can be prevented.

[0108] Note that even if the voltage Vbt is less than the reference voltage Vref, the user may force the device In some cases, it may be necessary to release the sensor 200 to terminate charging of the power storage unit 111. 35 detects the position of the device 100, and the value of the position data of the device 100 exceeds a threshold value. In this case, the circuit 211 may stop the operation of the circuit 231. The device 200 transmits a confirmation signal to the device 100, and if there is no response signal from the device 100, the circuit 211 may cause the circuit 231 to stop operating.

[0109] Next, in step S10, when the device 200 receives a radio wave having a stop signal, the circuit 21 3 extracts the stop signal, and the circuit 213 outputs the extracted stop signal to the circuit 211.

[0110] When a stop signal is input, the circuit 211 stops the operation of the circuit 231. For example, 11, the supply of power supply voltage to the circuit 231 is stopped. In this way, the operation of the circuit 231 can be stopped during a period when the operation is not required. By stopping the operation, power consumption can be reduced.

[0111] Thereafter, transistors 131, 132, and 17 are turned on as necessary. By turning ON the power supply voltage V1, the power supply voltage V2 can be output via terminals a and d. The load can be supplied with power from the power supply 111. Alternatively, the transistor 131 and the transistor 13 2, and transistor 170 is turned on to supply current via terminals b and d. It is possible to output a power supply voltage V2, and to supply power from the power storage unit 111 to a load.

[0112] This concludes the description of the example of the method for driving the power storage system.

[0113] As described with reference to FIGS. 1 to 5, in the example of the power storage system according to the present embodiment, By identifying the device 100 by the device 200 using the different data, the Since charging can be performed under optimal conditions, charging can be performed regardless of the specifications of the device 100, for example. In the conventional power storage device, the specifications are set individually for each mobile terminal, for example. In cases where the power supply is different, it is necessary to prepare a different power supply device. If the connectors used are different, other power supply devices cannot be used. When a user has multiple mobile terminals, the user needs multiple power supply devices, which is inconvenient. In this embodiment, for example, it is not necessary to change the device 200 depending on the specifications of the device 100. Since there is no need for a

[0114] Although an example in which the device 100 is identified by the device 200 using the identification data has been described, One aspect of the embodiment of the present invention is not limited to this. In some cases, identification data may not be used. Therefore, device 100 does not need to be identified by device 200 .

[0115] (Embodiment 2) In this embodiment, a configuration example of the circuit 113 will be described with reference to FIG.

[0116] The circuit 113 includes a processor 710, a bus bridge 711, a RAM (Random Acc ess Memory) 712, memory interface 713, controller 720, Interrupt controller 721, I / O interface (input / output interface) 72 2, and a power gate unit 730.

[0117] In addition, the circuit 113 includes a crystal oscillator circuit 741, a timer circuit 745, an I / O interface 746, I / O port 750, comparator 751, I / O interface 752 , bus line 761, bus line 762, bus line 763, and data bus line 76 4. Furthermore, the circuit 113 has at least a connection terminal 77 as a connection portion with an external device. 0 to 776. Each of the connection terminals 770 to 776 is a It represents a terminal or a group of terminals consisting of multiple terminals. Also, an oscillator 742 having a crystal oscillator 743 is connected to the circuit 113 via a connection terminal 772 and a connection terminal 773 .

[0118] The processor 710 has a register 785 and is connected to the bus line 76 via the bus bridge 711. 1 to bus line 763 and data bus line 764.

[0119] The memory 712 may function as a main memory for the processor 710. The memory 712 is, for example, a random access memory. 0 executes, data required to execute the instructions, and data processed by the processor 710. The data is written to the memory 712 by the instruction of the processor 710. The data 110 shown in FIG. 1 is stored in the memory 712. This is also fine.

[0120] In the circuit 113, power supply to the memory 712 is cut off during the low power consumption mode. Therefore, the memory 712 is a memory that can retain data even when power is not supplied. It is preferable to configure the

[0121] The memory interface 713 is an input / output interface with an external storage device. In response to an instruction from the processor 710, the connection terminal 776 is Data is written to and read from an external storage device connected to the device.

[0122] The clock generation circuit 715 generates a clock signal MCLK (hereinafter , also called simply "MCLK". ) is a circuit that generates the MC LK is also output to the controller 720 and the interrupt controller 721 .

[0123] The controller 720 is a circuit for controlling the entire circuit 113. For example, Control of memory maps, power control of circuit 113, clock generation circuit 715, crystal oscillation circuit 741 control, etc.

[0124] The connection terminal 770 is a terminal for inputting an external interrupt signal. A non-maskable interrupt signal NMI is input to the controller 720. When a non-maskable interrupt signal NMI is input to the controller 720, the controller 720 immediately The non-maskable interrupt signal NMI is output to the processor 710, and the processor 710 is notified of the interrupt. The write process is executed.

[0125] Also, the interrupt signal INT is input to the interrupt controller 721 via a connection terminal 770. The interrupt controller 721 receives an interrupt signal (T0IRQ , P0IRQ, C0IRQ) are also input without passing through the buses (761 to 764).

[0126] The interrupt controller 721 has a function of assigning priorities to interrupt requests. When the interrupt controller 721 detects an interrupt signal, it checks whether the interrupt request is valid. If the interrupt request is valid, the controller 720 receives an interrupt signal IN Output T.

[0127] The interrupt controller 721 also receives bus lines via the I / O interface 722. The input / output terminals 761 and 764 are connected to the data bus line 764 .

[0128] When the interrupt signal INT is input, the controller 720 interrupts the processor 710. The interrupt request signal INT is output to the processor 710 to cause the processor 710 to execute the interrupt process.

[0129] In addition, the interrupt signal T0IRQ is not transmitted through the interrupt controller 721 but through the controller 72 0 may be input directly to the controller 720. When this occurs, the non-maskable interrupt signal NMI is output to the processor 710. 710 to execute the interrupt process.

[0130] In this way, for example, a sensor can be provided in the device 100 to detect changes in the voltage of the power storage unit 111, and the change in the distance between the device 200 and the object, and execute an interrupt process according to the detection result. For example, power supply by device 200 may be stopped in response to an interrupt.

[0131] The register 780 of the controller 720 is provided within the controller 720. The register 786 of the controller 721 is provided in the I / O interface 722. .

[0132] Next, a peripheral circuit included in the circuit 113 will be described. The peripheral circuits include a marker circuit 745, an I / O port 750, and a comparator 751. The above circuit is merely an example, and a necessary circuit may be provided depending on the electrical device in which the circuit 113 is used. can.

[0133] The timer circuit 745 receives the clock signal TCLK( Hereinafter, it is simply called "TCLK".) It has a function to measure time. The clock generation circuit 715 generates an interrupt signal T0IRQ at a determined time interval. The timer circuit 745 outputs the I / O Connected to a bus line 761 and a data bus line 764 via an interface 746 It has been done.

[0134] TCLK is a clock signal with a lower frequency than MCLK. For example, is set to a few MHz (e.g., 8MHz), and TCLK is set to a few tens of kHz (e.g., 32 The clock generating circuit 740 is a crystal oscillator circuit 74 built in the circuit 113. The oscillator 742 is connected to a connection terminal 772 and a connection terminal 773. A quartz crystal unit 743 is used as the oscillator for 42. By configuring the clock generation circuit 740, all modules of the clock generation circuit 740 can be It is possible to incorporate the circuit 113.

[0135] The I / O port 750 inputs and outputs information to and from an external device connected via a connection terminal 774. It is an interface for connecting devices and an input / output interface for digital signals. For example, the I / O port 750 is connected to the circuit 119 via a connection terminal 774, and 74 and the transistor 131 through the connection terminal 774. 2, and connected to transistor 150 via connection terminal 774, and connected to connection terminal 774 and is connected to the power storage unit 111 via a connection terminal 774. For example, the I / O port 750 generates an interrupt signal in response to an input digital signal. P0IRQ is output to the interrupt controller 721. , the circuit 119, the transistor 131, the transistor 132, and the transistor 774. The transistor 150 is connected to the transistor 170 via a connection terminal 774. The power storage unit 111 is connected via a connection terminal 774 .

[0136] The comparator 751 detects, for example, the potential (or It is possible to compare the magnitude of the potential (or current) of a reference signal with that of a digital signal with a value of 0 or 1. Furthermore, when the value of this digital signal is 1, the comparator 751 divides The interrupt signal C0IRQ can be generated by the interrupt controller 7. 21. Furthermore, the comparator 751 receives an input via a connection terminal 774, for example. A signal indicating the voltage Vbt of the power storage unit 111 being input is compared with a signal indicating the reference voltage Vref. It can also be done.

[0137] The I / O port 750 and the comparator 751 are connected via a common I / O interface 752. The I / O is connected to a bus line 761 and a data bus line 764. Port 750 and comparator 751 each have a circuit that can be shared in their I / O interfaces. Therefore, it is configured with one I / O interface 752, but the I / O port 750, The I / O interface of the comparator 751 may also be provided separately.

[0138] The registers of the peripheral circuits are provided in the corresponding input / output interfaces. The register 787 of the marker circuit 745 is provided in the I / O interface 746. The register 783 of the input 750 and the register 784 of the comparator 751 are respectively / O interface 752.

[0139] The circuit 113 includes a power gate unit 730 for cutting off the power supply to the internal circuit. The power gate unit 730 supplies power only to the circuits required for operation. Therefore, the power consumption of the entire circuit 113 can be reduced.

[0140] As shown in FIG. 6, the circuit 113 includes a unit 701, a unit 702, and a unit The circuits of the unit 703 and the unit 704 are connected to the connection terminal 706 via the power gate unit 730. The connection terminal 771 is connected to the power storage unit 111, for example.

[0141] In this embodiment, the unit 701 includes a timer circuit 745 and an I / O interface. The unit 702 includes an I / O port 750, a comparator 751, and an I / O interface 752, and the unit 703 includes an interrupt controller 721, and an I / O interface 722. The unit 704 includes a processor 710, a memory The controller 710 includes a bus bridge 711, a memory interface 712, and a memory interface 713.

[0142] The power gate unit 730 is controlled by the controller 720. The unit 730 is a switch for cutting off the supply of power supply voltage to the units 701 to 704. The power supply voltage at this time is, for example, the power storage unit 11 A voltage of 1 or the like can be used.

[0143] The on / off of the switches 731 and 732 is controlled by the controller 720 . Specifically, the controller 720 controls the power gate unit 722 in response to a request from the processor 710. The output of the switch 730 outputs a signal to turn off some or all of the switches in the switch 730 (power supply The controller 720 also generates a non-maskable interrupt signal NMI or a timer The interrupt signal T0IRQ from the circuit 745 is used as a trigger to turn on the power gate unit 7 The power supply control circuit 32 outputs a signal to turn on the switch 30 (starts power supply).

[0144] In FIG. 6, the power gate unit 730 includes two switches (switch 731 and switch However, the present invention is not limited to this, and may be applied to any number of switches required for power cutoff. A switch should be provided.

[0145] In this embodiment, the power supply to the unit 701 can be controlled independently. A switch 731 is provided to allow independent control of power supply to units 702 to 704. However, the present invention is not limited to such a power supply path. For example, a switch other than the switch 732 may be provided to independently control the power supply to the memory 712. In addition, multiple switches may be provided for one circuit. This is also fine.

[0146] In addition, the controller 720 is always connected to the connection terminal 730 without going through the power gate unit 730. The power supply voltage is supplied from 771. In addition, to reduce the influence of noise, The oscillator circuit of the circuit 715 and the crystal oscillator circuit 741 each have a power supply circuit different from the power supply voltage. A power supply potential is supplied from an external power supply circuit.

[0147] By providing the controller 720 and the power gate unit 730, the circuit 11 It is possible to operate the 3 in three different operating modes. The first operating mode is normal operation. In this mode, all the circuits in the circuit 113 are active. The operating mode is called "Active mode."

[0148] In the first operation mode, for example, a response based on a confirmation signal from the device 200 shown in the first embodiment is The response signal is generated.

[0149] The second and third operating modes are low power consumption modes in which some circuits are active. In the second mode of operation, the controller 720 and the timer circuit 745 and its related circuits (crystal oscillator circuit 741, I / O interface 746) are active. In a third mode of operation, only the controller 720 is active. Here, The second operating mode is called "Noff1 mode" and the third operating mode is called "Noff2 mode". In the Nooff1 mode, the controller 720 and a part of the peripheral circuits ( In the Noff2 mode, only the controller 720 operates. is working.

[0150] The oscillator of the clock generation circuit 715 and the crystal oscillation circuit 741 are independent of the operation mode. The clock generation circuit 715 and the crystal oscillation circuit 741 are always supplied with power. To activate the clock, an enable signal is input from the controller 720 or from an external device. This is done by stopping the oscillation of clock generation circuit 715 and crystal oscillation circuit 741.

[0151] In the Noff1 and Noff2 modes, power is supplied by the power gate unit 730. Therefore, the I / O port 750 and the I / O interface 752 are inactive. e, but in order for the external device connected to the connection terminal 774 to operate normally, Power is supplied to the O port 750 and a part of the I / O interface 752. is the output buffer of the I / O port 750, and is a register 783 for the I / O port 750. In Noff1 and Noff2 modes, the actual function of I / O port 750 is I / O interface 752 and data transmission function with external devices, interrupt signal generation function The communication function of the I / O interface 752 is also stopped. do.

[0152] In this specification, a circuit is inactive when the power supply is cut off and the circuit is stopped. In addition to the above, the main functions in Active mode (normal operation mode) are stopped. This includes operating in a power-saving state, or in a less-power-consuming state than in Active mode.

[0153] With the above configuration, for example, if the user forcibly terminates the charging operation of the device 100, When the power gate unit 730 is turned on, the power gate unit 730 turns on the power gate unit 730 at the request of the processor 710. Outputs a signal to turn off some or all of the In addition, it is also possible to stop the supply of power to unnecessary circuit blocks.

[0154] Furthermore, an example of a register configuration applicable to each circuit block will be described with reference to FIG. .

[0155] The register shown in FIG. 7A includes a memory circuit 651, a memory circuit 652, a selector 653, and , has.

[0156] A reset signal RST, a clock signal CLK, and a data signal D are input to the memory circuit 651. The memory circuit 651 stores the data of the data signal D input in accordance with the clock signal CLK. The memory circuit 651 has a function of holding data and outputting it as a data signal Q. For example, it is possible to configure registers such as buffer registers and general-purpose registers. The memory circuit 651 is a static random access memory (SRAM). A cache memory consisting of registers and cache memories can also be provided. The cache memory can save data in the memory circuit 652.

[0157] The memory circuit 652 receives a write control signal WE, a read control signal RD, and a data signal. The write control signal WE, the read control signal RD, etc. are input via terminal c, for example. may be input.

[0158] The memory circuit 652 stores the data of the input data signal in accordance with the write control signal WE. and outputting the stored data as a data signal in accordance with a read control signal RD. Possesses the ability.

[0159] The selector 653 selects the data signal D or the data from the memory circuit 652 in accordance with the read control signal RD. The data signal output from the selector 652 is selected and input to the memory circuit 651.

[0160] The memory circuit 652 includes a transistor 631 and a capacitor 632 .

[0161] The transistor 631 is an n-channel transistor and functions as a selection transistor. One of the source and drain of the transistor 631 is connected to the output of the memory circuit 651. The back gate of the transistor 631 is connected to the power supply potential. The transistor 631 outputs the data from the memory circuit 651 in response to a write control signal WE. The CLKIN has a function of controlling the retention of the input data signal.

[0162] For example, a transistor with low off-state current may be used as the transistor 631. For example, oxides with a wider band gap than silicon are used as transistors with low fre- quency. A transistor having a channel formation region containing a semiconductor, the channel formation region being substantially i-type. A register can be applied.

[0163] For example, impurities such as hydrogen or water are removed as much as possible, and oxygen is supplied to fill the oxygen vacancies as much as possible. By reducing the amount of the oxide semiconductor as much as possible, a transistor including the oxide semiconductor can be manufactured. In the channel formation region, secondary ion mass spectrometry (SIMS) The hydrogen donor impurity was measured by The amount of 19 / cm 3 Less than or equal to 1×10 18 / cm 3 Reduce to below The off-state current of the transistor 631 is preferably 1×1 per 1 μm of channel width at 25° C. 0 -19 A (100zA) or less. More preferably, it is 1×10 -22 A(100yA) The lower the off-state current of a transistor, the better. The lower limit of the current is about 1×10 -30 It is estimated to be A / μm.

[0164] Examples of the oxide semiconductor include In-based metal oxides, Zn-based metal oxides, and In-Zn-based Metal oxides, In--Ga--Zn-based metal oxides, etc. can be used.

[0165] One of a pair of electrodes of the capacitor 632 is connected to the other of the source and drain of the transistor 631. The other end of the capacitor 632 is connected to a power supply potential VSS. The off-state current of the transistor 631 is very low. Since the voltage is so low that the charge in the capacitor 632 is held and data is retained even when the supply of the power supply voltage is stopped, It will be held.

[0166] The transistor 633 is a p-channel transistor. A power supply potential VDD is supplied to one of the drains, and a read control signal RD is supplied to the gate. is entered.

[0167] The transistor 634 is an n-channel transistor. and one of the source and drain of the transistor 633 is connected to the other of the source and drain of the transistor 634. A read control signal RD is input to the gate.

[0168] The transistor 635 is an n-channel transistor. and one of the drain and the source of the transistor 634 is connected to the other of the drain and the source of the transistor 635. The other of the source and the drain is supplied with the power supply potential VSS.

[0169] The input terminal of the inverter 636 is connected to the other of the source and drain of the transistor 633. The output terminal of the inverter 636 is connected to the input terminal of the selector 653. can be.

[0170] One of a pair of electrodes of the capacitor 637 is connected to the input terminal of the inverter 636, and the other The power supply potential VSS is supplied to the capacitor 637. It has the function of holding an electric charge based on the signal data.

[0171] In addition, the present invention is not limited to the above, and may be applied to, for example, a phase-change memory (PRAM). RAM (also called PCM (Phase Change Memory)), resistance change ReRAM (also called Resistance RAM), magnetoresistive memory It uses magnetoresistive RAM (MRAM) and other For example, the MRAM may be a magnetic tunnel junction device (MT J (Magnetic Tunnel Junction) element) AM can be applied.

[0172] Next, an example of a method for driving the register shown in FIG.

[0173] First, during normal operation, the power supply voltage, reset signal RST, and clock signal The CLK is being supplied to the register. At this time, the selector 653 selects the data signal The data D is output to the memory circuit 651. The memory circuit 651 outputs the data D in accordance with the clock signal CLK. At this time, the data of the data signal D inputted by the read control signal RD is held. Transistor 633 is turned on and transistor 634 is turned off.

[0174] Next, during the backup period immediately before the power supply voltage is stopped, In response to this pulse, the transistor 631 is turned on, and the data signal D is stored in the memory circuit 652. The data is stored and transistor 631 is turned off. The supply of the clock signal CLK is stopped, and then the reset signal RST to the register is When the transistor 631 is in an on state, the supply of the A positive power supply potential may be supplied to the back gate. Transistor 633 is turned on and transistor 634 is turned off.

[0175] Next, during the power supply stop period, the supply of the power supply voltage to the register is stopped. Since the off-state current of the transistor 631 in the memory circuit 652 is low, the stored data is retained. By supplying the ground potential GND instead of the power supply potential VDD, For example, the ground potential is the terminal shown in FIG. When the transistor 631 is in an off state, the A negative power supply potential may be supplied to the back gate of transistor 631 to keep the transistor 631 off. stomach.

[0176] Next, during the recovery period just before returning to the normal operation period, Then, the supply of the clock signal CLK is resumed, and then the supply of the reset signal CLK is resumed. At this time, the supply of the clock signal RST is resumed. The supply of the clock signal CLK is then resumed. The transistor 633 is turned off in response to the pulse of the control signal RD, and the transistor 63 4 is turned on, and the data signal of the value stored in the memory circuit 652 is output to the selector 653. The selector 653 selects the data signal according to the pulse of the read control signal RD. This outputs the signal to the memory circuit 651. This causes the memory circuit 651 to return to the state immediately before the power supply stop period. It can be restored.

[0177] After that, during the normal operation period, the memory circuit 651 performs normal operation again.

[0178] The above is an example of the method for driving the register shown in FIG.

[0179] It should be noted that the register is not limited to the configuration shown in FIG.

[0180] For example, the register shown in FIG. 7B has a smaller number of transactions than the register shown in FIG. The transistor 633, the transistor 634, the inverter 636, and the capacitor element 637 are not included. The registers shown in FIG. 7A are the same as those shown in FIG. The description of the registers shown in (A) will be used as appropriate.

[0181] At this time, one of the source and drain of the transistor 635 is connected to the input terminal of the selector 653. connected to the child.

[0182] In addition, the selector 654 selects the power supply potential VS S or the data signal output from the memory circuit 651 is selected and input to the memory circuit 652. .

[0183] Next, an example of a method for driving the register shown in FIG.

[0184] First, during the normal operation period, the power supply voltage, the reset signal RST, and the clock signal CLK are as follows: At this time, the selector 653 selects the data of the data signal D. The memory circuit 651 outputs the input signal in accordance with the clock signal CLK. The data of the data signal D is held. Also, the selector 65 is turned on in response to the write control signal WE2. 4 outputs the power supply potential VSS to the memory circuit 652. In the memory circuit 652, In response to the pulse of the signal WE, the transistor 631 is turned on, and the power supply voltage is supplied to the memory circuit 652. The position VSS is stored as data.

[0185] Next, during the backup period immediately before the power supply voltage is stopped, Therefore, the selector 654 selects the output terminal of the memory circuit 651 instead of supplying the power supply potential VSS. When the write operation is performed, one of the source and drain of the transistor 631 is turned on. In response to the pulse of the control signal WE, the transistor 631 is turned on, and the data is stored in the memory circuit 652. The data of the data signal D is stored, and the transistor 631 is turned off. The data in the memory circuit 652 is rewritten only when the potential of the data signal D is the same as the power supply potential VDD. Furthermore, the supply of the clock signal CLK to the register is stopped, and the When the transistor 631 is in the ON state, the supply of the reset signal RST is stopped. A positive power supply potential may be supplied to the back gate of the transistor 631 .

[0186] Next, during the power supply stop period, the supply of the power supply voltage to the register is stopped. In the memory circuit 652, the off-state current of the transistor 631 is low, so that the data value is maintained. By supplying the ground potential GND instead of the power supply potential VDD, It can also be considered that the voltage supply is stopped. When the transistor 631 is in an off state, a negative power supply potential is supplied to the back gate of the transistor 631. The transistor may be kept in an off state by using a resistor.

[0187] Next, during the recovery period just before returning to the normal operation period, Then, the supply of the clock signal CLK is resumed, and then the supply of the reset signal CLK is resumed. The supply of RST is resumed. At this time, the wiring through which the clock signal CLK is supplied is set to the power supply potential. The selector 653 is set to VDD and then the supply of the clock signal CLK is resumed. A value according to the data stored in the memory circuit 652 is read in response to a pulse of the read control signal RD. The data signal is output to the memory circuit 651. This causes the state immediately before the power supply interruption period to be stored. The circuit 651 can be restored.

[0188] After that, during the normal operation period, the memory circuit 651 performs normal operation again.

[0189] The above is an example of the method for driving the register shown in FIG.

[0190] By using the configuration shown in FIG. 7B, the power supply potential VSS during the backup period This eliminates the need to write data, making operations faster.

[0191] When the above registers are used for registers 784 to 787, the Nof When switching to the f1 or Noff2 mode, registers 784 to 78 The data in the memory circuit 651 of FIG. 7 is written to the memory circuit 652, and the data in the memory circuit 651 is The initial value is reset and the power is cut off.

[0192] Also, when returning from Noff1 or Noff2 mode to Active, register 7 When the power supply to the devices 84 to 787 is resumed, the data in the memory circuit 651 is first reset to the initial value. Then, the data in the storage circuit 652 is written to the storage circuit 651.

[0193] Therefore, even in the low power consumption mode, data necessary for processing by the circuit 113 is stored in the registers 784 to Since it is held by 787, the circuit 113 is switched from low power consumption mode to active mode. This allows the device 100 to be restored immediately, thereby reducing the power consumption of the device 100. can.

[0194] (Embodiment 3) In this embodiment, an example of a memory device will be described, for example, a memory 712 shown in FIG.

[0195] A configuration example of a storage device according to this embodiment will be described.

[0196] An example of a memory cell array will be described with reference to FIG.

[0197] The memory cell array shown in FIG. 8 includes a plurality of memory cells (memory circuits) 4 arranged in I rows and J columns. 00, wirings BL_1 to BL_J, wirings WL_1 to WL_I, and wirings CL_1 to The pixel circuit has a line CL_I and a wiring SL to which a potential of a predetermined value is supplied.

[0198] In the memory cell array shown in FIG. 8, M (M is a natural number between 1 and I) rows and N (N is a natural number between 1 and I) rows are arranged in a row. The memory cell 400 (memory cell 400(M,N)) in the upper Jth (natural number below) column is a transistor. A resistor 411 (M,N), a transistor 412 (M,N), and a capacitance element 413 (M,N ) and.

[0199] One of the source and the drain of the transistor 411(M,N) is connected to the wiring BL_N. Furthermore, the gate of the transistor 411(M,N) is connected to the wiring WL_M. In addition, the transistor 411 ( The potential of the back gate of each of the first and second electrodes (M, N) may be maintained.

[0200] The transistor 411 (M, N) is an n-channel transistor, This is a selection transistor that controls writing and retention.

[0201] In addition, the transistor 411(M,N) is a transistor having a low off-state current. It is possible.

[0202] The transistor 412 is a p-channel transistor. ) has a source and a drain connected to the wiring BL_N, and the other of the source and the drain is The gate of the transistor 412(M,N) is connected to the wiring SL. The drain terminal of the transistor 411(M,N) is connected to the other of the source and drain terminals of the transistor 411(M,N).

[0203] The transistor 412 (M, N) serves as an output transistor that sets the potential of the data to be output. It has the function of

[0204] One of a pair of electrodes of the capacitor 413(M,N) is connected to the source of the transistor 411(M,N). The other end of the first transistor is connected to the other of the source and drain, and the other end is connected to the wiring CL_M.

[0205] The capacitor 413(M,N) functions as a storage capacitor for storing data.

[0206] The above is a description of the configuration example of the memory cell array shown in FIG.

[0207] Next, an example of a method for driving a memory having the memory cell array shown in FIG. For example, data is written sequentially to the memory cells 400 in the Mth row. Although the present invention is not limited to the above case, a case in which data is read out will be described.

[0208] First, when data is written to the memory cell 400 in the Mth row, the potential of the wiring WL_M is set to VH. Then, the potential of all other wirings WL_other is set to VL.

[0209] VH is a potential (for example, a voltage) that is greater than a reference potential (for example, a power supply potential VSS). The power supply potential VDD is a potential below the reference potential, and VL is a potential below the reference potential.

[0210] At this time, in each of the memory cells 400 in the Mth row, the transistor 411 is turned on. The potential of one of the pair of electrodes of the capacitor 413 becomes equal to the potential of each wiring BL. do.

[0211] Then, the transistor 411 is turned off and the gate of the transistor 412 is in a floating state. The potential of the gate of transistor 412 is held constant.

[0212] By performing the above operation for each row, data can be written to all memory cells 400. Cut.

[0213] When data is read from the memory cell 400 in the Mth row, the potential of all the wirings WL is set to V L, wiring CL_M is set to VL, and the potential of all other wiring CL_other is set to VH to.

[0214] In the memory cell 400 in the Mth row, The resistance value of the transistor 412 is determined according to the gate voltage of the transistor 412. The potential of the memory cell 4 is stored as data according to the current flowing between the source and drain of the memory cell 4. It can be read from 00.

[0215] Furthermore, by repeating the above operation for each row, all the memory cells 400 are de-energized. The above is a description of an example of a method for driving the memory.

[0216] (Embodiment 4) In this embodiment, a structural example of a circuit included in the device 100 will be described with reference to FIG. Examples of the circuits include circuit 113, circuit 115, circuit 116, circuit 119, and circuit 121. Examples include:

[0217] The device 100 shown in FIG. 9A includes a transistor 801 having silicon in a channel forming region. and a transistor 802 having an oxide semiconductor in a channel formation region thereof. The structure has a plurality of wiring layers stacked on top of a transistor 802 .

[0218] The transistor 801 is provided in a semiconductor substrate having a buried insulating layer.

[0219] The transistor 802 includes a conductive layer 811a embedded in an insulating layer and a gate insulating layer 811b on the conductive layer 811a. The insulating layer 814 and the oxide semiconductor layer overlapping the conductive layer 811a with the insulating layer 814 interposed therebetween. The oxide semiconductor layer 813 is connected to conductive layers 815a and 815b. An insulating layer 816 is provided on the conductor layer 813 and the conductive layers 815a and 815b. The conductive layer 818 overlaps with the oxide semiconductor layer 813 with the insulating layer 6 sandwiched therebetween. The conductive layer 811a functions as a back gate electrode. The insulating layer 814 functions as a gate insulator. The oxide semiconductor layer 813 functions as a channel formation layer. The conductive layers 815a and 815b function as a source electrode and a drain electrode. The insulating layer 816 functions as a gate insulating layer. The conductive layer 818 functions as a gate electrode. It has the function of

[0220] The insulating layer 814 preferably has a function of blocking impurities such as hydrogen. , an aluminum oxide layer, a silicon nitride layer, etc. have the function of blocking hydrogen. In the structure shown in (A), the oxide semiconductor layer 813 is surrounded by insulating layers 814 and 816. Therefore, the transistor 802 is protected from impurities such as hydrogen from the outside (for example, the transistor 801). The diffusion of the pure material is suppressed.

[0221] Furthermore, the conductive layer 815a is formed by arranging the conductive layer 811 at an opening provided through the insulating layer 814. a is connected to a conductive layer 811b formed of the same conductive film as the conductive layer 811a. It is connected to the gate electrode of the transistor 801 .

[0222] Furthermore, wiring layers 822, 824, and 826 are stacked in this order on the upper layer of the transistor 802. The wiring layer 822 is connected to the conductive layer 815b by the wiring layer 821 embedded in the insulating layer. The wiring layer 824 is connected to the wiring layer 822 via the wiring layer 823 embedded in the insulating layer. The wiring layer 826 is connected to the wiring layer 824 by the wiring layer 825 embedded in the insulating layer. For example, the wiring layer 826 may be used as an external connection terminal.

[0223] In addition, in the structure shown in FIG. 9B, a transistor 801 and a transistor 802 are stacked. Furthermore, a plurality of wiring layers are stacked between the transistor 801 and the transistor 802. 9B also shows a terminal portion 803.

[0224] Above the transistor 801, wiring layers 831a, 833a, and 835a are stacked in this order. The wiring layer 831a is connected to the gate electrode of the transistor 801. The wiring layer 833a is connected to the wiring layer 831a by a wiring layer 832a embedded in the insulating layer. The line layer 835a is connected to the wiring layer 833a by the wiring layer 834a embedded in the insulating layer. do.

[0225] Furthermore, the conductive layer 815a is formed by arranging the conductive layer 811 at an opening provided through the insulating layer 814. a is connected to a conductive layer 811b formed of the same conductive film as a, and the conductive layer 811b is an insulating A wiring layer 836a embedded in the layer connects to the wiring layer 835a.

[0226] Furthermore, a wiring layer 838a is stacked above the transistor 802. 838a is connected to conductive layer 815b by a wiring layer 837a embedded in an insulating layer.

[0227] In addition, the terminal portion 803 is provided with a wiring layer 831 formed of the same conductive film as the wiring layer 831a. b, a wiring layer 833b formed of the same conductive film as the wiring layer 833a, and a wiring layer 835a A wiring layer 835b formed from the same conductive film as the conductive layer 811a. A conductive layer 811c formed of the same conductive film as the conductive layer 815a and a conductive layer 815 formed of the same conductive film as the conductive layer 815b are formed of the same conductive film as the conductive layer 815c. c, a wiring layer 837b formed of the same conductive film as the wiring layer 837a, and a wiring layer 838a The wiring layer 833 is formed of the same conductive film and is laminated in order. The wiring layer 83b is embedded in the insulating layer and is formed of the same conductive film as the wiring layer 832a. The wiring layer 835b is embedded in the insulating layer and is connected to the wiring layer 831b by the wiring 2b. The wiring layer 834b is formed of the same conductive film as the layer 834a and is connected to the wiring layer 833b. The conductive layer 811c is embedded in an insulating layer and is made of the same conductive film as the wiring layer 836a. The conductive layer 815c is connected to the wiring layer 835b by the wiring layer 836b formed thereon. The wiring layer 838b is connected to the conductive layer 811c through an opening formed through the layer 814. A wiring layer 837b is embedded in the insulating layer and is formed of the same conductive film as the wiring layer 837a. For example, the wiring layer 838b is used as an external connection terminal. This is also fine.

[0228] Furthermore, each component will be described.

[0229] Conductive layers 811a to 811c, conductive layer 818, wiring layer 831a to wiring layer 838a The wiring layers 831b to 838b may be made of, for example, molybdenum, titanium, chromium, or tantalum. tantalum, magnesium, silver, tungsten, aluminum, copper, neodymium, ruthenium, Alternatively, a layer containing a metal material such as scandium can be used. Layers 811c, 818, wiring layer 831a to wiring layer 838a, wiring layer 831b to wiring layer 8 Metal oxides or the like may be used as 38b.

[0230] Each of the insulating layers including the insulating layer 814 and the insulating layer 816 may be, for example, a silicon oxide layer or a silicon nitride layer. Silicon oxide layer, silicon oxynitride layer, silicon nitride oxide layer, aluminum oxide layer, aluminum nitride layer Aluminum layer, aluminum oxide nitride layer, aluminum oxide nitride layer, hafnium oxide layer, gallium oxide layer For example, the insulating layer 814 and the insulating layer 816 may be an oxide layer. A silicon oxide layer, a silicon oxynitride layer, or the like can be used as the insulating layer. Note that the insulating layers 814 and 816 are not necessarily provided.

[0231] The oxide semiconductor layer 813 may be, for example, an In-based metal oxide, a Zn-based metal oxide, or an In-Z An n-based metal oxide or an In-Ga-Zn-based metal oxide can be used. Oxide semiconductor layer may have, for example, a non-single crystal. The non-single crystal may have, for example, a CAAC (C Axis A The amorphous phase is classified into three types: ligned crystal, polycrystalline, microcrystalline, and amorphous. The defect level density of the nanocrystals is higher than that of the CAAC. The oxide semiconductor having CAAC is called CAAC-OS (C Axis Ali It is called GNED Crystalline Oxide Semiconductor. The oxide semiconductor layer may include, for example, a CAAC-OS. The oxide semiconductor has a c-axis aligned, and an a-axis and / or b-axis not aligned macroscopically.

[0232] In addition, instead of a part or all of the Ga contained in the In-Ga-Zn-based metal oxide, Metal oxides containing other metal elements may also be used. Examples of the other metal elements include gallium oxide. Any metal element that can bond with more oxygen atoms than aluminum can be used. For example, titanium, zinc, etc. If one or more of the elements Zn, Hf, Ge, and Sn are used, The other metal elements include lanthanum, cerium, praseodymium, and neodymium. , Samarium, Europium, Gadolinium, Terbium, Dysprosium, Holmium , erbium, thulium, ytterbium, and lutetium. These metal elements have a function as a stabilizer. The amount of these metal elements added is an amount that allows the metal oxide to function as a semiconductor. Using metal elements that can bond with more oxygen atoms than gallium, and further using metal oxides By supplying oxygen to the metal oxide, oxygen defects in the metal oxide can be reduced.

[0233] The conductive layers 815a to 815c can be formed using, for example, molybdenum, titanium, chromium, or titanium. Ta, magnesium, silver, tungsten, aluminum, copper, neodymium, ruthenium, or A layer containing a metal material such as scandium can be used for the conductive layer 815a to the conductive layer 815b. Metal oxide or the like may be used as 815c.

[0234] As shown in FIG. 9, in one example of a device 100 according to this embodiment, different transistors are stacked. By configuring in layers, the circuit area can be reduced.

[0235] However, the present invention is not limited to this, and the structure of the device 200 may be the above structure.

[0236] (Embodiment 5) In this embodiment, a structural example of the device 100 will be described with reference to FIGS.

[0237] 10(A) and 10(B) are diagrams showing the external appearance of the device 100. The device 100 includes: The device includes a circuit board 900 and a power storage unit 913. A label 910 is attached to the power storage unit 913. Furthermore, as shown in FIG. 10B, the device 100 has a terminal 951 and a terminal 95 2, and on the back of the label 910, an antenna 914 and an antenna 915 are provided.

[0238] The circuit board 900 includes a terminal 911 and a circuit 912. The terminal 911 is connected to a terminal 951. , a terminal 952, an antenna 914, an antenna 915, and a circuit 912. A plurality of terminals 911 are provided, and each of the plurality of terminals 911 is used as a control signal input terminal, a power supply terminal, etc. may also be used.

[0239] The circuit 912 is, for example, the circuit 113, the circuit 115, the circuit 116, and the circuit 11 shown in FIG. 9, the circuit 121, the transistor 131, the transistor 132, the transistor 150, and The circuit 912 may be provided on the back surface of the circuit board 900. It is noted that antenna 914 corresponds to antenna 114, and antenna 915 corresponds to antenna 118. The antennas 914 and 915 are not limited to being coil-shaped. For example, the antenna may be linear or plate-shaped. Also, the antenna may be a planar antenna, an aperture antenna, a traveling wave antenna, or the like. Antennas such as a tenna, an EH antenna, a magnetic field antenna, a dielectric antenna, etc. may be used. The antenna 914 or the antenna 915 may be a flat conductor. The capacitor can function as one of the conductors for electric field coupling. The antenna 914 or the antenna 915 is made to function as one of the two conductors. This allows power to be exchanged not only by electromagnetic fields and magnetic fields, but also by electric fields. can.

[0240] The power storage unit 913 corresponds to the power storage unit 111 in FIG.

[0241] The line width of antenna 914 is preferably larger than the line width of antenna 915. This allows the amount of power received by the antenna 914 to be increased.

[0242] The device 100 includes a layer 916 between the antenna 914 and the antenna 915 and the power storage body 913. The layer 916 can prevent, for example, shielding of an electromagnetic field from the power storage unit 913. The layer 916 may be made of, for example, a magnetic material. It may also be a layer.

[0243] The structure of the device 100 is not limited to that shown in FIG.

[0244] For example, as shown in FIG. 11(A-1) and FIG. 11(A-2), In the power storage unit 913 shown in FIG. 1(B), an antenna may be provided on each of a pair of opposing surfaces. FIG. 11(A-1) is an external view seen from one side of the pair of faces. 10(A) and 10(B) are external views of the pair of surfaces as viewed from the other side. The same parts as those of the device 100 shown in FIG. 10(B) are shown in FIG. 10(A) and FIG. 10(B). The description of the device 100 can be used as appropriate.

[0245] As shown in FIG. 11(A-1), a layer 916 is sandwiched between one of a pair of surfaces of a power storage unit 913. 11(A-2), a tenon 914 is provided on the other of the pair of surfaces of the power storage unit 913. An antenna 915 is provided between the layers 917. The layer 917 has a function of preventing the shielding of the electromagnetic field. Layer 917 may be a shielding layer.

[0246] By adopting the above structure, the size of both the antenna 914 and the antenna 915 can be increased. It is possible.

[0247] 11(B-1) and 11(B-2), In the case of the power storage unit 913 shown in FIG. 9B, a separate antenna may be provided on each of a pair of opposing surfaces. FIG. 11(B-1) is an external view seen from one side of the pair of faces. FIG. 10(A) and FIG. 10(B) are external views of the pair of surfaces as viewed from the other side. The same parts as those of the device 100 shown in FIG. 10(B) are shown in FIG. 10(A) and FIG. 10(B). The description of the illustrated device 100 may be used as appropriate.

[0248] As shown in FIG. 11(B-1), a layer 916 is sandwiched between one of a pair of surfaces of a power storage unit 913. 11B-2, a capacitor 91 An antenna 918 is provided on the other of the pair of surfaces of the substrate 3 with a layer 917 interposed therebetween. The antenna 918 is For example, the antenna 918 has a function of performing data communication with an external device. For example, an antenna having a shape applicable to antenna 914 and antenna 915 may be applied. The communication method between the device 100 and other devices via the antenna 918 is NF C, etc., to apply a response method that can be used between the device 100 and the device 200. can be done.

[0249] 12A, the power storage unit 913 shown in FIG. A display device 920 may be provided. The display device 920 is connected to the terminal 911 via the terminal 919. The label 910 is not provided on the portion where the display device 920 is provided. The same parts as those of the device 100 shown in FIG. 10(A) and FIG. 10(B) are as follows: The description of the device 100 shown in Figures 10(A) and 10(B) can be used as appropriate.

[0250] The display device 920 displays, for example, an image indicating whether charging is in progress, an image indicating the amount of stored power, etc. The display device 920 may be, for example, an electronic paper, a liquid crystal display device, an electrophotographic display device, or the like. For example, an electroluminescence (EL) display device can be used. By using the par, the power consumption of the display device 920 can be reduced.

[0251] 12B, the power storage unit 913 shown in FIG. A sensor 921 may be provided. The sensor 921 is electrically connected to the terminal 911 via a terminal 922. The sensor 921 may be provided on the back side of the label 910. The same parts as those of the device 100 shown in FIG. 10(A) and FIG. 10(B) are shown in FIG. The description of the device 100 shown in FIG. 10(B) can be used as appropriate.

[0252] As the sensor 921, for example, a sensor applicable to the sensor 235 can be used. Therefore, the sensor 921 may be used as the sensor 235. For example, data indicative of the environment in which the device 100 is placed (such as temperature) is detected and The signal may also be stored in memory within path 912.

[0253] Further, a structural example of the power storage unit 913 will be described with reference to FIGS.

[0254] A power storage unit 913 shown in FIG. 13A includes a terminal 951 and a terminal 952 provided inside a housing 930. The winding body 950 is impregnated with an electrolyte inside the housing 930. The terminal 952 is in contact with the housing 930, and the terminal 951 is in contact with the housing by using an insulating material or the like. 13A, the housing 930 is not in contact with the housing 930. However, in reality, the winding body 950 is covered by the housing 930, and the terminals 951 and 952 are extends outside the housing 930. The housing 930 is made of a metal material (e.g., aluminum). etc.) or a resin material can be used.

[0255] As shown in FIG. 13B, the housing 930 shown in FIG. 13A is made of a plurality of materials. For example, the power storage unit 913 illustrated in FIG. 13B may be formed by a housing 930a and a housing 93 930b are attached to each other, and a wound body 95 is disposed in the area surrounded by the housings 930a and 930b. 0 is provided.

[0256] The housing 930a can be made of an insulating material such as an organic resin. By using a material such as organic resin on the surface on which the If the shielding of the electric field by the housing 930a is small, the inside of the housing 930 Antennas such as antenna 914 and antenna 915 may be provided in the housing 930b. For example, a metal material can be used.

[0257] The structure of the wound body 950 is shown in FIG. The winding body 950 has a pole 932 and a separator 933. The negative electrode 931 and the positive electrode 932 are stacked on top of each other, and the laminated sheet is wound to form a wound body. It is.

[0258] The negative electrode 931 is connected to the terminal 911 shown in FIG. 10 via one of the terminals 951 and 952. The positive electrode 932 is connected to the terminal 91 shown in FIG. Connected to 1.

[0259] Furthermore, each component will be described.

[0260] An example of the negative electrode 931 will be described with reference to FIG.

[0261] As shown in FIG. 15(A), the negative electrode 931 has a negative electrode current collector 961 and a negative electrode current collector 961. and a negative electrode active material layer 962 provided on one surface or one side (both surfaces are shown in the figure). .

[0262] The negative electrode current collector 961 is made of a conductive material that does not form an alloy with carrier ions such as lithium. It is made of highly durable materials such as stainless steel, iron, copper, nickel, or titanium. The negative electrode current collector 961 may be in the form of a foil, a plate (sheet), a mesh, a pan, or the like. The negative electrode current collector may be in the form of a thin metal, an expanded metal, or the like. It is preferable that the thickness of 961 is 10 μm or more and 30 μm or less.

[0263] The negative electrode active material layer 962 is provided on one or both sides of the negative electrode current collector 961. In addition to lithium metal, graphite, a carbon material commonly used in the field of energy storage, can be used as the 62. Graphite can be classified into two types of low crystalline carbon: soft carbon and hard carbon, and highly crystalline carbon. Natural graphite, kish graphite, pyrolytic carbon, liquid crystal pitch-based carbon fiber, mesocarbon microfibers, etc. Clobeads (MCMB), liquid crystal pitch, petroleum or coal-based coke, etc. can be used. do.

[0264] In addition to the above-mentioned materials, the negative electrode active material is charged and discharged by alloying and dealloying reactions with carrier ions. The alloy material capable of carrying out the reaction can be used. In the case of on, the alloy-based material is, for example, Mg, Ca, Al, Si, Ge, Sn, At least one of Pb, As, Sb, Bi, Ag, Au, Zn, Cd, Hg, and In, etc. Materials containing one may be used.

[0265] For example, the surface of the negative electrode active material may be covered with an oxide film of metal or silicon. By covering the surface of the active material with the oxide film, the solid electrolyte interface (Solid El It can suppress the formation of a membrane called ectrolyte interphase, and can increase the irreversible capacity The occurrence of can be suppressed.

[0266] In this embodiment, a conductive additive and a binder are added to the above materials, mixed, and fired. The produced negative electrode active material layer 962 is used.

[0267] The negative electrode active material layer 962 will be described with reference to FIG. 15(B). The negative electrode active material layer 962 is a cross section of the negative electrode active material layer 962. 4 and a binder (not shown).

[0268] The conductive assistant 974 is disposed between the granular negative electrode active material 973 or between the granular negative electrode active material 973 and the negative electrode current collector 9 For example, the negative electrode active material layer 962 may have a function of improving electrical conductivity with the conductive additive 97. It is preferable to add 4. As the conductive additive 974, a material having a large specific surface area is preferable. Acetylene black (AB) can be used. Carbon nanotubes and graphene Carbon materials such as phenes and fullerenes may be used as the conductive additive 974. The case where graphene is used as an example will be described later.

[0269] The binder may be any binder that binds the negative electrode active material, the conductive additive, and the current collector. Examples of vinylidene fluoride include polyvinylidene fluoride (pVdF), vinylidene fluoride-hexafluorophosphate (PVDF), and vinylidene fluoride-hexafluorophosphate (VDF). Trifluoropropylene copolymer, vinylidene fluoride-tetrafluoroethylene copolymer Polymer, styrene-butadiene copolymer rubber, polytetrafluoroethylene, polypropylene For example, a resin material such as polyethylene or polyimide can be used.

[0270] The negative electrode 931 is fabricated as follows. First, the electrode material is a fluorine-containing polymer such as polyvinylidene fluoride. Mix vinylidene fluoride polymers dissolved in NMP (N-methylpyrrolidone) or other solvents. , forming a slurry.

[0271] Next, the slurry is applied to one or both sides of the negative electrode current collector 961 and dried. When the process is performed on both sides of the negative electrode current collector 961, the negative electrode active material layer is formed on both sides simultaneously or one side at a time. Then, the negative electrode 931 is manufactured by rolling using a roll press machine. do.

[0272] Next, an example in which graphene is used as a conductive additive added to the negative electrode active material layer 962 will be described with reference to FIG. 15(C) and 15(D).

[0273] In this specification, graphene refers to single-layer graphene or graphene having 2 to 100 layers. This includes multi-layer graphene. Single-layer graphene is a single atomic layer of carbon with π bonds. Graphene oxide is a compound in which the graphene is oxidized. When graphene is formed by reducing graphene oxide, Not all of the oxygen contained in graphene is released, and some of the oxygen remains in the graphene. When oxygen is present in the phene, the percentage of oxygen can be determined by X-ray Photoelectron Spectroscopy (XPS). When measured by 2atomic spectroscopy, c% to 20 atomic%; preferably 3 atomic% to 15 atomic% The following is the result.

[0274] FIG. 15C is a plan view of a part of the negative electrode active material layer 962 using graphene. The negative electrode active material layer 962 is a layer of a granular negative electrode active material 973 and a layer of a granular negative electrode active material 973. At the same time, it is composed of graphene 975 with granular negative electrode active material 973 packed inside. A binder not shown in the figure may be added, but it is necessary to add a binder so that the graphene 975 is bonded to each other. If the content is sufficient to function as a binder when the material is adhered to the surface, it is not necessarily a binder. The negative electrode active material layer 962 in plan view is made of a plurality of negative electrode active materials 973. The surface is covered with different graphene 975. Note that in a part, the granular negative electrode active material 9 73 may be exposed.

[0275] FIG. 15D is a cross-sectional view of a portion of the negative electrode active material layer 962 in FIG. and the negative electrode active material layer 962, In the cross-sectional view, the graphene 975 is The same graphene or multiple graphenes are observed as multiple granular negative electrode active material 9 73, or by using the same graphene or multiple graphenes, multiple granular negative The electrode active material 973 is contained therein. Note that the graphene 975 is in a bag shape. In some cases, the graphene 975 contains a plurality of particles of the negative electrode active material. In some cases, the negative electrode active material particles 973 are exposed in the exposed areas.

[0276] The thickness of the negative electrode active material layer 962 is set to a desired thickness between 20 μm and 150 μm. It is preferable to select a length.

[0277] The negative electrode active material layer 962 may be pre-doped with lithium. As a method, a lithium layer may be formed on the surface of the negative electrode active material layer 962 by a sputtering method. Alternatively, a lithium foil may be provided on the surface of the negative electrode active material layer 962. 2 can be pre-doped with lithium.

[0278] In addition, the volume of the granular negative electrode active material 973 expands due to the absorption of carrier ions. For this reason, the negative electrode active material layer becomes brittle during charging and discharging, and part of the negative electrode active material layer is broken off. This collapse reduces the reliability of the electricity storage device, such as the cycle characteristics.

[0279] However, even if the volume of the negative electrode active material increases or decreases due to charging and discharging, the granular negative electrode active material 973 When the surroundings are covered with graphene 975, the graphene 975 improves the dispersion and activity of the negative electrode active material. It is possible to prevent the material layer from collapsing. In other words, Graphene 975 can prevent the material layer from collapsing during charging and discharging. Even if the volume of the negative electrode active material increases or decreases, the negative electrode active material has a function of maintaining the bond between the negative electrode active materials. Therefore, there is no need to use a binder when forming the negative electrode active material layer 962, and the negative electrode active material layer 962 can be formed at a constant weight (constant volume). In the negative electrode active material layer 962 (a), the amount of the negative electrode active material can be increased. This makes it possible to increase the charge / discharge capacity per electrode weight (electrode volume).

[0280] In addition, the graphene 975 has conductivity and is connected to the plurality of particles of the negative electrode active material 973. In other words, when the negative electrode active material layer 962 is formed, the conductive additive is There is no need to use an electrochemical assistant, and in the negative electrode active material layer 962 of a certain weight (certain volume), It is possible to increase the amount of active material. Therefore, the charge / discharge per electrode weight (electrode volume) The capacity can be increased.

[0281] In addition, the graphene 975 provides an efficient and sufficient electron conduction path to the negative electrode active material layer 962. Since the negative electrode 931 is formed, the conductivity of the negative electrode 931 can be improved.

[0282] In addition, graphene 975 also functions as a negative electrode active material capable of absorbing and releasing carrier ions. Therefore, the charge capacity of the negative electrode 931 can be improved.

[0283] Note that the graphene may be used as a positive electrode active material.

[0284] Next, a method for forming the negative electrode active material layer 962 shown in FIG. do.

[0285] First, an electrode material and a dispersion liquid containing graphene oxide are mixed and kneaded to form a slurry.

[0286] Next, the above slurry is applied onto the negative electrode current collector 961. Next, vacuum drying is performed for a certain period of time. The solvent is removed from the slurry applied onto the negative electrode current collector 961 by using a roll press. The material is rolled using a rolling machine.

[0287] After that, the graphene oxide was electrochemically reduced using electrical energy and then heat-treated. Thermal reduction of graphene oxide produces graphene 975. In particular, electrochemical When the reduction treatment was performed, the graphene formed had more π bonds than the graphene formed by the heat treatment. The increased proportion of carbon atoms allows the formation of highly conductive graphene975. Through the above steps, a conductive film using graphene as a conductive additive on one or both sides of the negative electrode current collector 961 is formed. Thus, a negative electrode active material layer 962 can be formed, and a negative electrode 931 can be manufactured.

[0288] Next, the positive electrode 932 will be described with reference to FIG.

[0289] 16A is a cross-sectional view of the positive electrode 932. The positive electrode 932 is a positive electrode active material on a positive electrode current collector 981. A layer of material 982 is formed.

[0290] The positive electrode current collector 981 can be made of stainless steel, gold, platinum, zinc, iron, copper, aluminum, titanium, etc. Materials with high electrical conductivity, such as metals and alloys thereof, can be used. Elements that improve heat resistance, such as titanium, neodymium, scandium, and molybdenum, are added. Aluminum alloys that react with silicon to form silicide can be used. The metal element may be a metal element that reacts with silicon to form a silicide. These include zirconium, titanium, hafnium, vanadium, niobium, tantalum, and chromium. , molybdenum, tungsten, cobalt, nickel, etc. The positive electrode current collector 981 is a foil Plate (sheet), net, punched metal, expanded metal, etc. It can be used.

[0291] The positive electrode active material layer 982 contains a conductive additive and a binder in addition to the positive electrode active material. Good too.

[0292] The positive electrode active material of the positive electrode active material layer 982 is LiFeO2, LiCoO2, LiNiO2 , LiMn2O4, V2O5, Cr2O5, MnO2 and other compounds are used as materials. can be done.

[0293] Or lithium-containing complex phosphate (general formula LiMPO4 (M is Fe(II), Mn(I) One or more of Li(II), Co(II), and Ni(II) can be used. Representative examples of O4 include LiFePO4, LiNiPO4, LiCoPO4, and LiMnP O4, LiFe a Ni b PO4, LiFe a Co b PO4, LiFe a Mn b PO4, L iNi a Co b PO4, LiNi aMn b PO4 (where a + b ≤ 1, 0 < a < 1, 0 < b <1), LiFe c Ni d Co e PO4, LiFe c Ni d Mn e PO4, LiNi c C o d Mn e PO4 (where c + d + e ≤ 1, 0 < c < 1, 0 < d < 1, 0 < e < 1), Li Fe f Ni g Co h Mn i PO4 (where f + g + h + i ≤ 1, 0 < f < 1, 0 < g < 1, 0 < h < 1, 0 < i < 1), etc., lithium compounds can be used as the active material

[0294] Or, a lithium-containing composite silicate represented by the general formula Li (2-j) MSiO4 (M is one or more of Fe(II), Mn(II), Co(I I), Ni(II), 0 ≤ j ≤ 2), etc., can be used For the general formula Li (2-j) MSiO4, typical examples include Li (2-j) FeSi O4, Li (2-j) NiSiO4, Li (2-j) CoSiO4, Li (2-j) Mn SiO4, Li (2-j) Fe k Ni l SiO4, Li (2-j) Fe k Co l SiO4 、Li (2-j) Fe k Mn l SiO4, Li (2-j) Ni k Co l SiO4, Li ( 2-j) Ni k Mn lSiO4 (where k + l is 1 or less, 0 < k < 1, 0 < l < 1), Li (2 -j) Fe m Ni n Co q SiO4, Li (2-j) Fe m Ni n Mn q SiO4, Li (2-j) Ni m Co n Mn q SiO4 (where m + n + q is 1 or less, 0 < m < 1, 0 < n < 1 , 0 < q < 1), Li (2-j) Fe r Ni s Co t Mn u SiO4 (where r + s + t + u is 1 or less, 0 < r < 1, 0 < s < 1, 0 < t < 1, 0 < u < 1), etc. can be used as materials .

[0295] In addition, when the carrier ion is an alkali metal ion other than lithium ion or an alkaline earth metal ion, as the positive electrode active material layer 982, in the above lithium compound, lithium-containing composite phosphate and lithium-containing composite silicate, instead of lithium, an alkali metal ( for example, sodium, potassium, etc.), an alkaline earth metal (for example, calcium, strontium ium, barium, beryllium, magnesium, etc.) may be used.

[0296] Also, the positive electrode active material layer 982 is not limited to being formed directly in contact with the positive electrode current collector 981. Between the positive electrode current collector 981 and the positive electrode active material layer 982, an adhesion layer for the purpose of improving the adhesion between the positive electrode current collector 981 and the positive electrode active material layer 98 2, a flattening layer for relaxing the uneven shape of the surface of the positive electrode current collector 981, a heat dissipation layer for heat dissipation, the positive electrode current collector 981 or the positive electrode active material layer 982's response etc. A functional layer such as a stress relief layer for relieving the stress may be formed using a conductive material such as metal. stomach.

[0297] FIG. 16B is a plan view of the positive electrode active material layer 982. The positive electrode active material 983 is a particulate material capable of absorbing and releasing positive ions. Graphene 9 is a graphite sheet having a plurality of active materials 983 covered therewith and filled with the positive electrode active materials 983. The surfaces of a plurality of positive electrode active materials 983 are covered with different graphenes 984. In addition, the positive electrode active material 983 may be partially exposed.

[0298] The particle size of the positive electrode active material 983 is preferably 20 nm or more and 100 nm or less. Since electrons move within 983, it is preferable that the particle size of the positive electrode active material 983 be smaller.

[0299] In addition, sufficient characteristics can be obtained even if the surface of the positive electrode active material 983 is not covered with a graphite layer. However, when graphene is used in combination with a positive electrode active material coated with a graphite layer, This is more preferable because it allows the flow to flow.

[0300] FIG. 16C is a cross-sectional view of a portion of the positive electrode active material layer 982 in FIG. The positive electrode active material 983 and the graphene 984 covering the positive electrode active material 983 are included. The positive electrode active material 84 is observed as a line in the cross-sectional view. The graphene 984 is sandwiched between a plurality of graphenes 984. The die 984 may be in a bag shape and may enclose a plurality of positive electrode active materials 983 therein. In addition, there are cases where the positive electrode active material is not covered with graphene and is partly exposed.

[0301] The thickness of the positive electrode active material layer 982 is selected from the range of 20 μm to 100 μm. In addition, the thickness of the positive electrode active material layer 982 is appropriately adjusted so as to prevent cracks and peeling. is preferred.

[0302] The positive electrode active material layer 982 is formed of acetylene having a volume that is 0.1 to 10 times the volume of graphene. Carbon particles such as black particles and carbon nanofibers that have one-dimensional expansion, A known conductive additive may be included.

[0303] Depending on the material of the positive electrode active material, the volume may expand due to the absorption of ions that act as carriers. As a result, the positive electrode active material layer becomes brittle during charging and discharging, and part of the positive electrode active material layer is broken off. The positive electrode active material collapses, resulting in a decrease in the reliability of the energy storage device. Even if the volume increases or decreases due to discharge, the graphene covers the surrounding area, so the graphene acts as a positive electrode active material. In other words, graphene can prevent the dispersion of the electrolyte and the collapse of the positive electrode active material layer. Even if the volume of the positive electrode active material increases or decreases due to the change in the volume of the positive electrode active material, the positive electrode active material has a function of maintaining the bond between the positive electrode active materials. This makes it possible to improve the reliability of the electricity storage unit.

[0304] In addition, graphene 984 is in contact with multiple positive electrode active materials and also functions as a conductive additive. In addition, it has a function of retaining a positive electrode active material capable of absorbing and releasing carrier ions. Therefore, there is no need to mix a binder into the positive electrode active material layer, and the amount of positive electrode active material per positive electrode active material layer is It is possible to increase the discharge capacity of the electricity storage device.

[0305] Next, a method for producing the positive electrode active material layer 982 will be described.

[0306] First, a slurry containing particulate positive electrode active material and graphene oxide is formed. After the slurry is applied onto the dielectric body 981, a reduction process is performed by heating in a reducing atmosphere. The positive electrode active material is baked, and oxygen contained in the graphene oxide is removed, resulting in the graphene Note that not all of the oxygen contained in graphene oxide is released, and some of the oxygen remains in the graphene. The graphene oxide remains in the graphene. Hereinafter, this will be referred to as thermal reduction. Reduction by chemical reaction using a reducing agent such as hydrazine is not limited to this. (Hereinafter referred to as chemical reduction.) A potential is applied to the electrode in the electrolyte so that graphene oxide is reduced. Reduction methods other than thermal reduction, such as electrochemical reduction using a Through the above steps, a positive electrode active material layer 982 is formed on a positive electrode current collector 981. As a result, the conductivity of the positive electrode active material layer 982 is increased.

[0307] Graphene oxide contains oxygen and therefore becomes negatively charged in polar solvents. The benzene disperses in the polar solvent. Therefore, the positive electrode active material contained in the slurry does not aggregate. Therefore, the increase in particle size of the positive electrode active material due to aggregation can be suppressed. This facilitates the movement of electrons within the positive electrode active material, thereby increasing the electrical conductivity of the positive electrode active material layer.

[0308] A carbon layer or the like may be formed on the surface of the positive electrode active material particles.

[0309] The separator 933 may be cellulose (paper) or polypropylene with holes. An insulator such as polyethylene may be used.

[0310] The negative electrode 931, the positive electrode 932, and the separator 933 are impregnated with an electrolyte. The electrolyte containing the carrier ions is a material containing lithium. When using lithium carbide, the electrolyte is LiClO4, LiAsF6, LiBF4, LiPF6, or Li Lithium salts such as (C2F5SO2)2N can be used.

[0311] In addition, the carrier ions are alkali metal ions other than lithium ions, alkaline earth metal ions, etc. In the case of metal ions, an alkali metal ion is used instead of lithium in the above lithium salt as an electrolyte. Alkaline metals (e.g., sodium and potassium), alkaline earth metals (e.g., calcium, Strontium, barium, beryllium, magnesium, etc.) may also be used.

[0312] As the solvent for the electrolyte, a material capable of transporting carrier ions is used. The solvent is preferably an aprotic organic solvent. Representative examples of the aprotic organic solvent include , Ethylene carbonate (EC), Propylene carbonate, Dimethyl carbonate, Di Ethyl carbonate (DEC), γ-butyrolactone, acetonitrile, dimethoxyethane tetrahydrofuran, and the like, and one or more of these can be used.

[0313] In addition, by using a polymer material that gels as a solvent for the electrolyte, safety against leakage, etc. is improved. The safety of the lithium-ion battery is improved. In addition, the lithium-ion battery can be made thinner and lighter. Representative examples of polymeric materials include silicone gel, acrylic gel, and acrylonitrile gel. , polyethylene oxide, polypropylene oxide, fluorine-based polymers, etc.

[0314] In addition, a flame-retardant and non-volatile ionic liquid (room-temperature molten salt) was used as the solvent for the electrolyte. By using multiple batteries, the internal temperature of the lithium-ion battery can be prevented from rising due to internal short circuits or overcharging. Even if the temperature rises, it can prevent lithium-ion batteries from exploding or catching fire.

[0315] In addition, instead of the electrolyte, solid electrolytes containing inorganic materials such as sulfides and oxides, and P A solid electrolyte containing a polymer material such as EO (polyethylene oxide) can be used. When a solid electrolyte is used, the separator is not required. Since the device can be integrated into one body, there is no risk of leakage, and safety is improved dramatically.

[0316] The structure of the power storage unit 913 is not limited to that shown in FIG. An example of 913 will be described with reference to FIG.

[0317] The laminate type power storage unit 913 shown in FIG. 17 includes a positive electrode current collector 991 and a positive electrode active material layer 992. a positive electrode 993 having the above structure, a separator 997, a negative electrode current collector 994, and a negative electrode active material layer 995. The battery is made by laminating a negative electrode 996 having a conductor layer and sealing the negative electrode 996 in an exterior body 999 and injecting an electrolyte solution 998. In FIG. 17, the power storage unit 913 is made up of a sheet-like positive electrode 993 and a sheet-like negative electrode 996. In order to increase the battery capacity, the above laminated structure is wound. It is preferable to stack multiple sheets and then seal them. In the case of a laminated type, the battery has flexibility, making it suitable for applications requiring flexibility. It is suitable for the purpose.

[0318] In the laminate type electricity storage unit 913 shown in FIG. The positive electrode current collector 99 also serves as a terminal for electrical contact with the outside. 1 and a portion of the negative electrode current collector 994 are disposed so as to be exposed to the outside from the exterior body 999.

[0319] In the laminated type electricity storage unit 913, the exterior body 999 is made of, for example, polyethylene, polypropylene, Al is applied to a membrane made of propylene, polycarbonate, ionomer, polyamide, etc. A thin metal film made of aluminum, stainless steel, copper, nickel, or other material with excellent flexibility is then applied. On the thin film, an insulating synthetic resin such as polyamide resin or polyester resin is applied as the outer surface of the exterior body. A laminated film having a three-layer structure with a film can be used. This prevents electrolyte and gas from passing through, ensures insulation, and is electrolyte resistant. do.

[0320] It should be noted that the type is not limited to the laminate type, and may be, for example, a coin type or a square type.

[0321] Furthermore, the power storage unit 913 may be a lithium ion capacitor.

[0322] Lithium ion capacitors are electric double layer capacitors (EDLCs). The positive electrode of the lithium-ion battery (abbreviation for Double Layer Capacitor) is made of carbon material. It is a hybrid capacitor that combines a positive electrode and a negative electrode of a lithium-ion battery. It is an asymmetric capacitor with a different principle. The positive electrode forms an electric double layer and is charged and discharged by physical action. The negative electrode is charged and discharged by the chemical action of lithium. By using a negative electrode in which lithium has been absorbed in advance into a carbon material, activated carbon can be added to the conventional negative electrode. This represents a dramatic improvement in energy density compared to the electric double-layer capacitor used.

[0323] The lithium ion capacitor uses a lithium ion and an anion instead of the positive electrode active material layer. It is sufficient to use a material that can reversibly support at least one of the above. For example, activated carbon, conductive polymers, polyacenic organic semiconductors (PAS, PolyAcenic Examples include FCSP (short for Semiconductor).

[0324] Lithium-ion capacitors have high charge / discharge efficiency, can be charged and discharged quickly, and can be used repeatedly. It also has a long lifespan due to use.

[0325] The above-mentioned negative electrode is used as the negative electrode of such a lithium ion capacitor. It is possible to manufacture a power storage device in which generation of reversible capacity is suppressed and cycle characteristics are improved. In addition, a power storage device with excellent high-temperature characteristics can be manufactured.

[0326] (Embodiment 6) In this embodiment, an electric device will be described.

[0327] Here, electrical equipment refers to industrial products that contain parts that operate by electrical power. This is not limited to consumer use such as home appliances, but also covers a wide range of uses such as business, industrial, and military. This category includes:

[0328] Examples of electrical devices to which a power storage device according to one embodiment of the present invention can be applied include televisions. Display devices such as video and monitors, lighting devices, personal computers such as desktop and notebook computers Data, word processors, DVDs (Digital Versatile Discs), etc. Image reproducing device that reproduces still or moving images stored on any recording medium, CD (Compact Portable or stationary audio playback devices such as t Disc players and digital audio players Equipment, portable or stationary radio receivers, tape recorders and IC recorders (voice recorders Recording and playback equipment such as headphones, stereos, remote controllers, etc. Timepieces such as meters and wall clocks, cordless telephone handsets, transceivers, mobile phones, car phones , portable or stationary game machines, pedometers, calculators, personal digital assistants, electronic organizers, electronic books, Translators, voice input devices such as microphones, still cameras, video cameras, and other photographic equipment, Toys, electric shavers, electric toothbrushes, microwave ovens and other high-frequency heating devices, electric rice cookers, Washing machines, vacuum cleaners, water heaters, electric fans, hair dryers, humidifiers, dehumidifiers and air conditioners Air conditioning equipment such as dishwashers, dish dryers, clothes dryers, futon dryers, electric refrigerators, Electric freezers, electric refrigerators and freezers, freezers for DNA storage, flashlights, power tools, smoke detectors, auxiliary equipment Hearing devices, cardiac pacemakers, portable X-ray devices, radiation measuring devices, electric massagers and dialysis In addition, emergency lights, traffic lights, gas meters, etc. Measuring instruments such as water meters, belt conveyors, elevators, escalators, vending machines, Ticket vending machines, ATM machines (CDs, short for cash dispensers) and automated teller machines ATM (Automated Teller Machine), digital signage Inage (electronic signboards), industrial robots, wireless relay stations, mobile phone base stations, power storage systems Examples of applications include industrial equipment such as power systems, secondary batteries for power leveling and smart grids. In addition, vehicles (transportation vehicles) that are propelled by electric motors using power from secondary batteries are also electric. The above-mentioned mobile objects include, for example, electric vehicles (EVs), Hybrid vehicles (HEVs) that combine a combustion engine and an electric motor, plug-in hybrid vehicles (P HEVs, tracked vehicles that use these tires and wheels as tracks, agricultural machinery, and electrically assisted vehicles. Motorized bicycles, including bicycles, motorcycles, electric wheelchairs, electric carts, small or large boats, Submarines, fixed-wing and rotary-wing aircraft, rockets, satellites, space probes, and planetary probes , spacecraft, etc.

[0329] In addition, the above-mentioned electrical equipment is a main power source for covering almost all of the power consumption, and is a power supply according to one embodiment of the present invention. The electric device can be powered by the power storage device according to the present invention. An uninterruptible power source that can supply power to electrical equipment in the event of a power outage. The power storage device according to one embodiment of the present invention can be used for the above-mentioned electric device. , supplying power to electrical equipment in parallel with the supply of power to electrical equipment from the mains or utility power supply The power storage device according to one embodiment of the present invention can be used as an auxiliary power source for performing the above.

[0330] As an example, a mobile terminal is shown in FIG. 18(A) and FIG. 18(B). FIG. 18A is a diagram of the mobile terminal as seen from the front, and FIG. 18B is a diagram of the mobile terminal as seen from the back.

[0331] A mobile terminal 1100 shown in FIG. 18(A) and FIG. 18(B) includes a housing 1111 and a display unit 1112. 12, a power storage device 1113, and a power switch 1114.

[0332] A part of the display unit 1112 can be used as a touch panel area, and the user can operate the displayed operation keys. Data can be input by touching the screen. The entire area of ​​the display unit 1112 is a touch panel. It may also be configured to have the function of a filter.

[0333] The display unit 1112 is, for example, an electroluminescence (EL) display module. A display module or a liquid crystal display module can be used.

[0334] The power storage device 1113 is a cassette type battery. The number of terminals 1121 is not particularly limited. 11, the terminal 1121 is fitted into the recess of the housing 1111, so that the terminal 1121 is 2. This allows power to be supplied from the power storage device 1113 to the circuit inside the housing 1111. After the power storage device 1113 is fitted into the recess of the housing 1111, The power storage device 1113 may be exposed. A lid may be provided on the power storage device 1113. The device 1113 is designed to be removable from the mobile terminal 1100, but in the embodiment of the present invention An embodiment of the present invention is not limited to this. The power storage device 1113 may be arranged so as not to be removable. By fitting the components into the recess, the degree of freedom in arranging the components inside the mobile terminal 1100 is increased, The terminal 1100 can be made smaller and thinner. In this case, the power storage device 111 3 can be inserted in the mobile terminal 1100 and power and other supplies can be exchanged. Even if the power storage device 1113 can be removed from the mobile terminal 1100, The device 1113 may be inserted in the mobile terminal 1100 and used for power exchange. stomach.

[0335] The mobile terminals shown in FIG. 18(A) and FIG. 18(B) can store various information (still images, videos, text, etc.). Functions for displaying images, calendars, dates, or times on the display, Touch input function for touch input operation or editing of information displayed on the display, various software It may have a function to control processing by (program), etc.

[0336] FIG. 19 is a block diagram of an example of a mobile terminal. The mobile terminal shown in FIG. Line communication circuit 1131, analog baseband circuit 1132, digital baseband circuit 1 133, a power storage device 1134, a power supply circuit 1135, an application processor 1136, A display controller 1141, a memory 1142, a display 1143, a touch sensor A sensor 1149, an audio circuit (such as a speaker and a microphone) 1147, and one of the input means. It is composed of a keyboard 1148 and other components.

[0337] The power storage device 1134 corresponds to the power storage device 1113 shown in FIG. 18. The other components are as follows: Equivalent to the load.

[0338] The wireless communication circuit 1131 has a function of receiving radio waves including data, for example. The path 1131 may be, for example, an antenna.

[0339] By providing a touch sensor 1149, the display unit 114 4 can be operated.

[0340] The display 1143 includes a display unit 1144, a source driver 1145, and a gate driver 1146. The display unit 1144 is composed of a source driver 1145 and a gate driver 1146. A driver 1146 controls the operation.

[0341] The application processor 1136 includes a CPU 1137 and a digital signal processor (also called DSP) 1138 and an interface (also called IF) 1139.

[0342] The memory 1142 is usually composed of an SRAM or a DRAM. For example, By using memory, the cost per bit of memory can be reduced, and The power consumption of the memory 1142 can be reduced.

[0343] Furthermore, an operation example of the portable terminal shown in FIG. 19 will be described.

[0344] First, an image is formed by receiving radio waves containing data or by the application processor 1136. The data stored in the memory 1142 is transmitted to the display controller 114 1 to the display 1143, and the image input by the display 1143 Displays the image according to the data. If there is no change in the image, it is usually 60 to 130 hours. Data is read from the memory 1142 at a period equal to or less than z, and the read data is stored in the disk. The data is sent to the play controller 1141. When the user performs an operation to rewrite the screen, Then, a new image is formed by the application processor 1136, and the image is stored in the memory. During this time, the image data is read out periodically from the memory 1142. When the new image data has been stored in the memory 1142, the next During a frame period, data stored in the memory 1142 is read out, and the read data is The data is output to a display 1143 via a display controller 1141. The display 1143 to which the data has been input displays an image according to the input image data. The above read operation continues until the next data is stored in the memory 1142. In this way, by writing data to and reading data from the memory 1142, The display operation is performed by the play 1143 .

[0345] 20(A) and 20(B) show an example of a power tool.

[0346] The electric power tool shown in FIG. 20A includes a housing 1211, a tool tip 1212, and a trigger switch. The device has a switch 1214, a power storage device 1216, and a connection / disconnection control switch 1217. The electric power tool shown in FIG. 20(A) may be an electric drill. The tool may be an electric screwdriver.

[0347] The housing 1211 has a handle portion 1215 .

[0348] The tip tool 1212 may be, for example, a drill, a Phillips bit, or a flathead bit. The tip tool 1212 can be made detachable and can be used as a drill, a plastic, or a tool depending on the application. A straight bit or a minus bit may be appropriately selected and used.

[0349] In the electric power tool shown in FIG. 20(A), the power switch is turned on and the handle portion 1215 is By gripping the tool and turning on the trigger switch 1214, the tool tip 1212 is operated. It can be done.

[0350] The power storage device 1216 can be attached or detached by switching the attachment / detachment control switch 1217. The power storage device 1216 has a terminal similar to the mobile terminal shown in FIG. By connecting the terminal and a terminal provided on the housing 1211, the power storage device 1216 is The body 1211 can be powered.

[0351] The electric power tool shown in FIG. 20(B) includes a housing 1221, a blade 1222, and a trigger switch. The device has a switch 1224, a power storage device 1226, and a connection / disconnection control switch 1227. The power tool shown in 20(B) may be an electric cutter.

[0352] The housing 1221 has a handle portion 1225 .

[0353] In the electric power tool shown in FIG. 20(B), the handle portion 1225 is gripped and the trigger switch 122 is operated. By turning on the switch 4, the blade 1222 rotates to perform cutting processing, etc. can be done.

[0354] The power storage device 1226 can be attached or detached by switching the attachment / detachment control switch 1227. The power storage device 1226 has a terminal similar to the mobile terminal shown in FIG. By connecting the terminal and a terminal provided on the housing 1221, the power storage device 1226 is The body 1221 can be powered.

[0355] Furthermore, an example of charging the above-mentioned electrical device will be described with reference to FIG.

[0356] FIG. 21A shows an example in which the mobile terminal 1100 shown in FIG. 18 is superimposed on the power supply device 1300. It shows.

[0357] FIG. 21(B) is a diagram showing the mobile terminal from the bottom side. For example, in the case of the electromagnetic induction type, As shown in FIG. 21(B), an antenna 1311 provided in the mobile terminal 1100 and a power supply device 1300 is electromagnetically coupled to an antenna 1312 provided on the This allows power to be supplied to the mobile terminal 1100.

[0358] In addition, in FIG. 21(A) and FIG. 21(B), the mobile terminal 1100 is superimposed on the power supply device 1300. 22, the mobile terminal 1100 transfers power to the power storage device 1113. may be removed and the power storage device 1113 may be superimposed on the power feeding device 1300.

[0359] The configuration of the power supply device 1300 is not particularly limited. The antenna 1312 is moved so that it overlaps with the mobile terminal 1100, thereby charging the mobile terminal 1100. or a moving coil type in which a plurality of antennas 1312 are provided and superimposed on the mobile terminal 1100. Alternatively, a multi-coil system in which charging is performed using an antenna 1312 may be applied.

[0360] The electrical devices that can be charged by the power supply device 1300 are not limited to those mentioned above.

[0361] FIG. 23 shows a specific configuration of the above electric device. In FIG. 23, The display device 1400 capable of supplying power is a power storage device 14 according to one embodiment of the present invention. 04 is an example of an electrical device using the display device 1400 for receiving TV broadcasts. The display device includes a housing 1401, a display unit 1402, a speaker unit 1403, and a power storage device 14 The power storage device 1404 according to one embodiment of the present invention is provided inside a housing 1401. The display device 1400 can receive power from a commercial power source, and can also store It is also possible to use the power stored in the power supply device 1404. The power storage device 1404 according to one embodiment of the present invention can be used continuously even when power cannot be supplied from a power source. By using it as a power source, the display device 1400 can be used.

[0362] The display unit 1402 may be a liquid crystal display device or a light-emitting device having light-emitting elements such as organic EL elements in each pixel. Device, electrophoretic display device, DMD (Digital Micromirror Devi ce), PDP (Plasma Display Panel), FED (Field A semiconductor display device such as a 3D Emission Display can be used.

[0363] In addition, display devices are used for TV broadcast reception, personal computers, advertising displays, etc. , all display devices for displaying information are included.

[0364] In FIG. 23, a stationary lighting device that can receive power from a power supply device 1450 is shown. The device 1410 is an example of an electric device including a power storage device 1413 of one embodiment of the present invention. Specifically, the lighting device 1410 includes a housing 1411, a light source 1412, a power storage device 1413, etc. The power storage device 1413 is supplied with power from a power supply device 1450. In FIG. The power storage device 1413 is mounted on the ceiling 1414 on which the housing 1411 and the light source 1412 are mounted. 1, the power storage device 1413 is provided inside the housing 1411. The lighting device 1410 may be powered by a commercial power source. In addition, the power stored in the power storage device 1413 can be used. Therefore, even when power cannot be supplied from a commercial power source, the power storage device 14 according to one embodiment of the present invention can be used. By using the power supply 13 as an uninterruptible power supply, the lighting device 1410 can be used.

[0365] In addition, FIG. 23 illustrates a lighting device 1410 that is installed on a ceiling 1414. However, in the power storage device according to one embodiment of the present invention, for example, a side wall 1415, a floor 1416, and other parts other than the ceiling 1414 are 416, and the like, or in a fixed lighting device provided in a window 1417, etc., or in a tabletop lighting device. The present invention can also be used in lighting devices of this type.

[0366] The light source 1412 may be an artificial light source that artificially obtains light using electricity. Specifically, incandescent lamps, fluorescent lamps and other discharge lamps, light emitting diodes (LEDs) and organic electroluminescence (EL) elements The element is an example of the artificial light source.

[0367] In FIG. 23, an indoor unit 1420 and The air conditioner including the power storage device 142 according to one embodiment of the present invention and the outdoor unit 1424 is 3. Specifically, the indoor unit 1420 includes a housing 1421, an air outlet 23, the power storage device 1423 is an indoor unit 14 20, the power storage device 1423 is provided in the outdoor unit 1424. Alternatively, both the indoor unit 1420 and the outdoor unit 1424 may be provided with the power storage device 14. 23 may be provided. The air conditioner receives power from a commercial power source. Alternatively, the power stored in the power storage device 1423 can be used. In the case where the electric storage device 1423 is provided in both the indoor unit 1420 and the outdoor unit 1424, the electric storage device 1423 can be used in the event of a power outage or the like. Therefore, even when power cannot be supplied from a commercial power source, the power storage device 1 according to one embodiment of the present invention can be used. By using the 423 as an uninterruptible power source, it becomes possible to use an air conditioner.

[0368] In addition, Figure 23 shows an example of a separate type air conditioner consisting of an indoor unit and an outdoor unit. The figure shows an integrated air conditioner that has both the indoor and outdoor functions in a single housing. The power storage device of one embodiment of the present invention can also be used in the partitioner.

[0369] In FIG. 23, an electric refrigerator-freezer 1 that can receive power from a power supply device 1450 is shown. Reference numeral 430 denotes an example of an electric device including a power storage device 1434 of one embodiment of the present invention. In general, the electric refrigerator-freezer 1430 includes a housing 1431, a refrigerator compartment door 1432, a freezer compartment door 1433, and a 23, the power storage device 1434 is provided inside the housing 1431. The electric refrigerator-freezer 1430 is supplied with power from a commercial power source. Alternatively, the power stored in the power storage device 1434 can be used. Even when power cannot be supplied from a commercial power source due to the above reasons, the power storage device according to one embodiment of the present invention can be used. By using the device 1434 as an uninterruptible power supply, the electric refrigerator-freezer 1430 can be used. do.

[0370] In FIG. 23, a clock 1440 that can receive power from a power supply device 1450 is 1 is an example of an electrical device including a power storage device 1441 of one embodiment of the present invention.

[0371] Among the above-mentioned electrical appliances, high-frequency heating devices such as microwave ovens, electric rice cookers, etc. The equipment requires high power for a short period of time. Therefore, the equipment supplements the power that cannot be supplied by commercial power sources. By using a power storage device according to one embodiment of the present invention as an auxiliary power source for It can prevent the commercial power breaker from tripping during use.

[0372] In addition, during periods when electrical equipment is not being used, especially during periods when the total amount of power that can be supplied by commercial power suppliers is low, During times when the proportion of electricity actually used (called the electricity usage rate) is low, By storing power in the device, it is possible to prevent high power usage outside of the above time periods. For example, in the case of an electric refrigerator-freezer 1430, when the temperature is low, the refrigerator compartment door 143 2. During the night when the freezer door 1433 is not opened or closed, electricity is stored in the power storage device 1434. Then, as the temperature rises, the refrigerator door 1432 and the freezer door 1433 are opened and closed. By using the power storage device 1434 as an auxiliary power source during the daytime, the daytime power usage rate can be kept low.

[0373] Furthermore, an example of a moving object, which is an example of an electric device, will be described with reference to FIG.

[0374] The power storage device described in the above embodiment can be used as a power storage device for control. The storage device can be charged by external power supply using plug-in technology or wireless power supply. In addition, when the moving object is an electric rail vehicle, it can be driven by power supply from overhead lines or conductive rails. It can be charged by

[0375] 24(A) and 24(B) show a power supply device 1590 capable of supplying power. An example of an electric vehicle is shown in FIG. 1580. The electric vehicle 1580 includes a power storage device according to one embodiment of the present invention. The power storage device 1581 is supplied with power from a power supply device 1590. The power of the storage device 1581 is adjusted by the control circuit 1582 to be supplied to the drive device The control circuit 1582 includes a ROM, a RAM, a CPU, etc., which are not shown. The signal processing unit 1584 is controlled by the processor 1584.

[0376] The driving device 1583 is a DC motor or an AC motor alone, or a combination of a motor and an internal combustion engine. The processing device 1584 is configured in combination with the electric vehicle 1580. (acceleration, deceleration, stopping, etc.) and driving information (uphill and downhill slopes, etc., load on the drive wheels) Based on the input information (such as shipment information), the control circuit 1582 outputs a control signal. 582 is a power supply device that supplies electric energy from the power storage device 1581 in response to a control signal from a processing device 1584. It adjusts the energy and controls the output of the drive unit 1583. When an AC motor is installed Although not shown, an inverter for converting direct current to alternating current is also built in.

[0377] The power storage device 1581 can be charged by power supply from a power supply device 1590. The power is converted to a constant DC voltage through a conversion device such as an AC / DC converter. The power storage device 1581 can be a power storage device according to one embodiment of the present invention. By installing it, it will contribute to increasing the capacity of the battery and improve convenience. can.

[0378] As the power supply device described with reference to FIGS. 20 to 24, for example, the device 2 shown in the first embodiment 00 can be applied.

[0379] As the power storage device described with reference to FIGS. 20 to 24, for example, the device 1 shown in the first embodiment 00 can be applied.

[0380] Note that one power supply device 1450 can supply power to a plurality of power storage devices. The device 1450 transmits a confirmation signal to each electrical device using a wireless signal, and receives a confirmation signal from the electrical device. The power can be supplied to each electrical device in turn by the response signal from each device. The power storage device has an anti-collision function and receives power from the power supply device 1450. Each power storage device may be configured to respond to the received radio wave at a different timing. For example, when each storage device has different identification data, the response is based on the identification data. Since it is possible to select the power storage device to be used, each power storage device responds at a different timing. Therefore, for example, when the power supply device 1450 has a plurality of oscillator circuits, each oscillator By controlling the oscillation circuit, it is also possible to supply power to a plurality of power storage devices in sequence. It is also possible to supply power to each of the power storage devices simultaneously.

[0381] As described above, the power storage device which is one embodiment of the present invention can be applied to various electric devices. EXAMPLES

[0382] In this embodiment, an example of a power storage device will be described.

[0383] The power storage device according to this embodiment is a coin-type power storage device.

[0384] In the preparation of the positive electrode, LiFePO4 particles with a carbon layer formed on the surface and NMP (N-methyl- pyrrolidone) was stirred and mixed in a kneader at 2000 rpm for 3 minutes.

[0385] Next, ultrasonic vibration is applied for 3 minutes, and the mixture is stirred and mixed at 2000 rpm for 1 minute using a kneader. The process was repeated five times.

[0386] Next, graphene oxide was added to the mixture and stirred in a kneader at 2000 rpm for 2 minutes. Mixing was carried out 8 times.

[0387] After that, pVdF (Kureha Chemical Co., Ltd.) was added as a binder and mixed at 2000 rp in a kneader. The mixture was stirred and mixed at 400 °C for 2 min once.

[0388] Furthermore, the process of adding NMP and stirring and mixing at 2000 rpm for 2 minutes was repeated until the sample was coated. This was repeated until the desired viscosity was achieved.

[0389] The compounding ratio of the LiFePO4 particles with the carbon layer, graphene oxide, and pVdF was 9 The ratio was 1.4:0.6:8 (unit: wt%).

[0390] The slurry was prepared by the above steps. The coating was applied to an aluminum foil having a thickness of 20 μm using a coating machine. The distance from the coating surface was 230 μm, and the coating speed was 10 mm / sec.

[0391] The above sample was dried with hot air at a temperature of 80°C for 40 minutes, and then pressed using a roll press. The mixture was then heated at 170°C for 10 hours under reduced pressure and pressed again. A part of the electrode was punched out to fabricate a positive electrode. The temperature was set at 120°C, and pressing was performed under conditions that reduced the thickness of the positive electrode by 20%. The thickness of the material layer is 58 μm and the electrode density is 1.82 g / cm 3 And LifeP The O4 loading is approximately 9.7 mg / cm 2 The theoretical monopolar capacity is about 1.6 mAh / cm 2 in be.

[0392] The LiFePO4 particles with the carbon layer formed on the surface are materials produced using a solid phase method. The LiFePO4 particles with a carbon layer on the surface were prepared in a dry room environment (no exposure). At a temperature of -55°C to -70°C, the raw materials Li2CO3:FeC2O4·2H2O: The raw materials were weighed out so as to give a molar ratio of NH4H2PO4 = 2:1:1.

[0393] Next, these were mixed and ground using a ball mill. The mill is equipped with a 500 ml zirconia pot and a 3 mm diameter zirconia ball weighing 300 g. A total of 150 g of the above raw materials was mixed in a mixing bowl at a rotation speed of 300 rpm for 2 hours. For the grinding, 250 ml of acetone (Kanto Chemical Co., Ltd., 0.01% relative to the total weight) was used as a solvent. 0.68% water) was used.

[0394] Next, place the sample in a dry room and heat it at 50°C for at least 1 hour or 2 hours using a hot plate. Drying was carried out for the following period.

[0395] After that, in the above-mentioned dry room environment, a vacuum dryer was used to dry the samples at 80°C under a vacuum of 0.1 MPa. The mixture was dried at RT for 2 hours.

[0396] Next, the mixture was sintered in a muffle furnace at 350°C for 10 hours. At this time, the N2 flow rate was It is 5l / min.

[0397] Next, 10 wt% glucose was weighed out for the baked sample, and the baked sample and glucose The mixture was mixed and crushed using a ball mill. Mixing and grinding were carried out using the method.

[0398] Next, in the above dry room environment, heat the sample at 50°C for at least 1 hour using a hot plate. Drying was carried out for 2 hours or less.

[0399] After that, in the above-mentioned dry room environment, a vacuum dryer was used to dry the samples at 80°C under a vacuum of 0.1 MPa. It was dried for 2 hours.

[0400] Next, the mixture was fired in a muffle furnace at 600° C. for 10 hours.

[0401] Thereafter, in the above-mentioned dry room environment, the aggregated active material particles are crushed using a ball mill. This crushing process was carried out under the same conditions as the mixing and crushing of the raw materials described above, but at a rotation speed of 20 The difference is that the rpm was 0 and the treatment time was 30 minutes.

[0402] Next, in the above dry room environment, heat the sample at 50°C for at least 1 hour using a hot plate. Drying was carried out for 2 hours or less.

[0403] After that, in the above-mentioned dry room environment, a vacuum dryer was used to dry the sample in a vacuum of 0.1 MPa for 17 Drying was carried out at 5°C for 2 hours.

[0404] By the above steps, LiFePO4 particles having a carbon layer formed on the surface were produced. The diameter of the primary particles of LiFePO4 is 50 nm or more and 300 nm or less, and the diameter of the secondary particles is , less than 2 μm.

[0405] Graphene oxide is a material produced using the Hummers method. In the production process, graphite is mixed with KMO4 and sulfuric acid to oxidize the graphite. After washing with hydrochloric acid, the graphite is dispersed in water and partly peeled off using an ultrasonic cleaner. Thereafter, the hydrochloric acid is removed, and the water is removed using an evaporator and ethanol under reduced pressure. The obtained sample is then crushed in a dancing mill and dried. We created a

[0406] In the preparation of the negative electrode, MCMB with a silicon oxide layer formed on the surface of the particles, NMP, and pVdF The mixture was stirred and mixed for 5 minutes at 2000 rpm using a kneader. The weight ratio of pVdF was 10 wt % (weight percent).

[0407] Furthermore, the process of adding NMP and stirring and mixing at 2000 rpm for 5 minutes was repeated until the sample was coated. This was repeated until the desired viscosity was achieved.

[0408] The slurry was prepared by the above steps. The coating was applied to a copper foil with a thickness of 18 μm using a coating machine. The gap was 230 μm and the coating speed was 10 mm / sec.

[0409] The above sample was dried with hot air at 70°C for 40 minutes, and then pressed using a roll press. The mixture was then heated at 170°C for 10 hours under reduced pressure and pressed again. The electrode was punched out from the mold to prepare a negative electrode. The pressing was performed at 120°C under conditions that reduced the thickness of the positive electrode by 20%. , the thickness of the active material layer is 89 μm, and the electrode density is 1.42 g / cm 3 And MCMB The loading amount is about 11.4 mg / cm 2 The theoretical monopolar capacity is about 4.2 mAh / cm 2 is .

[0410] The MCMB particles with the silicon oxide layer formed are materials produced using the sol-gel method. To prepare MCMB particles with a silicon layer, silicon ethoxide, hydrochloric acid, and toluene were used. The mixture was stirred to prepare a Si(OEt)4 toluene solution. The ratio of silicon oxide to MCMB was 1 wt% (weight percent). The amount of Si(OEt)4 in the solution was determined to be 3.14 × 10 ―4 mol, 1N hydrochloric acid is 2.91 x 10 ―4 mol, and toluene was 2 ml.

[0411] Next, in the above-mentioned dry room environment, the Si(OEt)4 toluene solution was added with SiO2 particles having an average particle size of 100 nm. 9 μm MCMB was added and stirred. After this, the solution was incubated at 70°C for 3 hours in a humid environment. was held.

[0412] Next, the mixture was sintered in a muffle furnace under a nitrogen atmosphere at 500° C. for 3 hours.

[0413] After that, the aggregated active material particles are crushed in a mortar to obtain the M on which the silicon oxide layer is formed. CMB particles were produced.

[0414] Furthermore, using the above positive and negative electrodes, a CR2032 type (diameter 20 mm, height 3.2 mm) A coin-type cell was fabricated using a 25 μm thick polypropylene separator. Pyrene was used. The electrolyte was ethylene carbonate (EC) and diethyl carbonate. The mixture was mixed with hexafluorophosphate (DEC) in a volume ratio of 3:7, and the resulting solution was added with hexafluorophosphate. An electrolyte made by dissolving lithium (LiPF6) at a concentration of 1 mol / liter was used.

[0415] In addition, the charge / discharge capacity of the coin-type cell was evaluated. Toyo Systems TOSCAT-3100) was used, and the ambient temperature was set to 25°C and the charge / discharge rate was set to 0 .2C (34mA / g), upper limit voltage 4.0V, lower limit voltage 2.0V, coin cell charging and discharging An electrical test was carried out.

[0416] The results of the charge / discharge test are shown in Figure 25. In Figure 25, the horizontal axis shows capacity (mAh / g) and the vertical axis shows voltage. The number of samples for charge / discharge evaluation was three, and the results are shown by solid line, dashed line, and Shown by dotted line.

[0417] As shown in FIG. 25, the maximum charge and discharge capacities of all samples were approximately 120 mAh / g. Therefore, it is possible to configure a power storage device using the above positive and negative electrodes. It was confirmed that this was the case. [Explanation of symbols]

[0418] 100 devices 110 Data 111 Electricity storage unit 113 Circuit 114 Antenna 115 Circuit 116 Circuits 118 Antenna 119 Circuit 121 Circuit 131 Transistor 132 Transistor 141 Circuit 142 circuits 143 Load 150 Transistors 170 Transistors 191 Circuit 192 Interface 193 Circuit 194 circuits 200 equipment 211 Circuit 212 Antenna 213 Circuit 214 Circuit 215 Circuit 221 Circuit 222 Circuit 223 Antenna 230 circuits 231 Circuit 235 Sensors 240 External power supply 400 memory cells 411 Transistor 412 Transistor 413 Capacitive element 631 Transistor 632 Capacitor 633 Transistor 634 Transistor 635 Transistor 636 Inverter 637 Capacitive element 651 Memory circuit 652 Memory circuit 653 Selector 654 Selector 701 units 702 units 703 units 704 units 710 Processor 711 Bus Bridge 712 Memory 713 Memory Interface 715 Clock Generation Circuit 720 Controller 721 Controller 722 I / O Interface 730 Power Gate Unit 731 Switch 732 Switch 740 Clock Generation Circuit 741 Crystal Oscillator Circuit 742 Oscillator 743 Crystal unit 745 Timer Circuit 746 I / O Interface 750 I / O ports 751 Comparator 752 I / O Interface 761 Bus Line 762 Bus Line 763 Bus Line 764 Data Bus Lines 770 Connection terminal 771 Connection terminal 772 Connection terminal 773 Connection terminal 774 Connection terminal 775 Connection terminal 776 Connection terminal 780 Register 783 Registers 784 Registers 785 Register 786 Registers 787 Registers 801 Transistors 802 Transistor 803 Terminal section 811a conductive layer 811b Conductive layer 811c conductive layer 813 Oxide semiconductor layer 814 Insulating layer 815a conductive layer 815b Conductive layer 815c conductive layer 816 Insulating layer 818 Conductive layer 821 Wiring layer 822 Wiring layer 823 Wiring layer 824 wiring layer 825 wiring layer 826 wiring layer 831a wiring layer 831b Wiring layer 832a Wiring layer 832b Wiring layer 833a wiring layer 833b wiring layer 834a Wiring layer 834b wiring layer 835a wiring layer 835b wiring layer 836a wiring layer 836b wiring layer 837a wiring layer 837b Wiring layer 838a Wiring layer 838b wiring layer 900 Circuit Board 910 Label 911 Terminal 912 Circuit 913 Electricity storage unit 914 Antenna 915 Antenna 916 layers 917 layers 918 Antenna 919 Terminal 920 Display device 921 Sensor 922 Terminal 930 Case 931 negative electrode 932 Positive electrode 933 Separator 951 Terminal 952 Terminal 961 Negative electrode current collector 962 Negative electrode active material layer 973 Negative electrode active material 974 Conductive additives 975 Graphene 981 Positive electrode current collector 982 Positive electrode active material layer 983 Cathode active material 984 Graphene 991 Positive electrode current collector 992 Positive electrode active material layer 993 Positive electrode 994 Negative electrode current collector 995 Negative electrode active material layer 996 negative electrode 997 Separator 998 Electrolyte 999 Exterior body 1100 Mobile terminal 1111 Case 1112 Display section 1113 Electricity storage device 1114 Power switch 1121 Terminal 1122 Terminal 1131 Wireless communication circuits 1132 Analog Baseband Circuit 1133 Digital Baseband Circuit 1134 Electricity storage device 1135 Power supply circuit 1136 Application Processor 1137 CPU 1141 Display Controller 1142 Memory 1143 Display 1144 Display section 1145 Source Driver 1146 Gate Driver 1148 Keyboard 1149 Touch Sensor 1211 Case 1212 Tip tool 1214 Trigger Switch 1215 Handle 1216 Energy storage device 1217 Detachable control switch 1221 Case 1222 Blade 1224 Trigger Switch 1225 Handle 1226 Energy storage device 1227 Detachable control switch 1300 Power Supply Equipment 1311 Antenna 1312 Antenna 1400 display device 1401 Case 1402 Display section 1403 Speaker section 1404 Electricity storage device 1410 Lighting equipment 1411 Case 1412 light source 1413 Electricity storage device 1414 Ceiling 1415 Side wall 1416 Beds 1417 Window 1420 Indoor unit 1421 Case 1422 Ventilator 1423 Electricity storage device 1424 Outdoor unit 1430 Electric refrigerator-freezer 1431 Case 1432 Refrigerator door 1433 Freezer door 1434 Electricity storage device 1440 Clock 1441 Electricity storage device 1450 Power Supply Equipment 1580 Electric Vehicle 1581 Electricity storage device 1582 Control circuit 1583 Drive unit 1584 Processing Unit 1590 Power Supply Equipment

Claims

1. A receiving circuit, A data communication circuit; A storage battery; a first transistor provided between the power receiving circuit and the power storage unit; a control circuit electrically connected to the power storage unit and to a gate of the first transistor; The control circuit includes: a processor electrically connected to a gate of the first transistor; a memory electrically connected to the processor; a controller electrically connected to the processor and the memory; the processor includes a register including a first storage circuit and a second storage circuit; the first memory circuit has a function of retaining data during a period in which power is supplied from the power storage unit to the processor; the second memory circuit has a function of retaining data during a period when supply of power from the power storage unit to the processor is stopped; the second memory circuit includes a second transistor having silicon in a channel formation region, a third transistor having an oxide semiconductor in a channel formation region, and a capacitor; a gate of the second transistor is electrically connected to one of a source and a drain of the third transistor and one electrode of the capacitance element; a gate electrode of the second transistor is disposed above a channel formation region of the second transistor; an oxide semiconductor layer having a channel formation region of the third transistor is disposed above the second transistor with an insulating layer interposed therebetween; The power storage device, wherein the oxide semiconductor layer contains In.

2. A receiving circuit; A data communication circuit; A storage battery; a first transistor provided between the power receiving circuit and the power storage unit; a control circuit electrically connected to the power storage unit and to a gate of the first transistor; The control circuit includes: a processor electrically connected to a gate of the first transistor; a memory electrically connected to the processor; a controller electrically connected to the processor and the memory; the processor includes a register including a first storage circuit and a second storage circuit; the first memory circuit has a function of retaining data during a period in which power is supplied from the power storage unit to the processor; the second memory circuit has a function of retaining data during a period when supply of power from the power storage unit to the processor is stopped; the second memory circuit includes a second transistor having silicon in a channel formation region, a third transistor having an oxide semiconductor in a channel formation region, and a capacitor; a gate of the second transistor is electrically connected to one of a source and a drain of the third transistor and one electrode of the capacitance element; a gate electrode of the second transistor is disposed above a channel formation region of the second transistor; an oxide semiconductor layer having a channel formation region of the third transistor is disposed above the second transistor with an insulating layer interposed therebetween; The power storage device, wherein the oxide semiconductor layer contains In, Ga, and Zn.

3. In claim 1 or 2, the register includes a first selector and a second selector; an output terminal of the first selector is electrically connected to the first memory circuit; the first memory circuit is electrically connected to an input terminal of the second selector; an output terminal of the second selector is electrically connected to one of the source and the drain of the third transistor; one of a source and a drain of the first transistor is electrically connected to an input terminal of the first selector.

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