High Frequency Module

Abstract

In the present invention, a plurality of submodules each include a plurality of electronic components which each include a plurality of internal terminals. A first support member covers and supports the plurality of electronic components so that the plurality of internal terminals are exposed. A second support member supports the plurality of submodules. A plurality of external terminals of the plurality of submodules are respectively connected to the plurality of internal terminals, and are exposed from the second support member. At least one submodule among the plurality of submodules has a first electroconductive film which is provided in at least one region of the first support member.

Description

[Technical field]

[0001] The present invention relates to a high-frequency module including a plurality of electronic components. [Background technology]

[0002] A technology is known in which multiple integrated circuit devices are mounted on an interposer and sealed with resin (Patent Document 1). With the need for smaller and lower-profile portable communication terminals, there is a demand for smaller and lower-profile components built into the communication terminals. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-48386 Summary of the Invention [Problem to be solved by the invention]

[0004] In a high-frequency module obtained by mounting multiple devices on an interposer and sealing it with resin, the thickness of the interposer becomes a bottleneck, making it difficult to reduce the height. In addition, when multiple high-frequency devices or devices that generate switching noise are mounted on a common interposer, electromagnetic interference is likely to occur between the devices. The object of the present invention is to provide a high-frequency module that can be made low-profile and reduce electromagnetic interference. [Means for solving the problem]

[0005] According to one aspect of the present invention, It has multiple sub-modules, Each of the plurality of sub-modules comprises: a plurality of electronic components each including a plurality of internal terminals; a first support member that covers and supports the electronic components so as to expose the internal terminals; Including, moreover, A second support member that covers and supports the plurality of sub-modules; a plurality of external terminals connected to the plurality of internal terminals, respectively, and exposed from the second support member; Equipped with At least one of the plurality of sub-modules is a high-frequency module having a first conductive film provided on at least a partial area of ​​the first support member. Effect of the Invention

[0006] Since the internal terminals of the electronic components are connected to the external terminals and the external terminals are exposed from the second support member, the high-frequency module can be mounted on another board via the exposed external terminals. Since no interposer is interposed between the electronic components and the other board, a low profile can be achieved. The first conductive film provided on one submodule functions as an electromagnetic shielding film, reducing electromagnetic interference between submodules. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1A is a cross-sectional view of a high-frequency module according to a first preferred embodiment, and FIG. 1B is a cross-sectional view of the high-frequency module and a module substrate shown in FIG. 1A. [Diagram 2] 2A to 2D are cross-sectional views of a sub-module included in the high frequency module according to the first embodiment during the course of its manufacture, and FIG. 2E is a cross-sectional view of the sub-module. [Diagram 3] 3A, 3B, and 3C are cross-sectional views of the high-frequency module according to the first preferred embodiment during the course of its manufacture. [Figure 4] FIG. 4 is a cross-sectional view of the high-frequency module according to the second preferred embodiment. [Diagram 5] 5A and 5B are cross-sectional views of a high-frequency module according to the third preferred embodiment and a modified example of the third preferred embodiment, respectively. [Figure 6] FIG. 6 is a cross-sectional view of a high-frequency module according to the fourth preferred embodiment. [Figure 7] 7A and 7B are cross-sectional views of a high-frequency module according to a modification of the fourth preferred embodiment. [Figure 8] FIG. 8 is a cross-sectional view of a high-frequency module and a module substrate according to the fifth preferred embodiment. [Figure 9] FIG. 9 is a cross-sectional view of a high-frequency module and a module substrate according to the sixth preferred embodiment. [Figure 10] FIG. 10 is a cross-sectional view of a high-frequency module and a module substrate according to a modification of the sixth preferred embodiment. [Figure 11] FIG. 11 is a cross-sectional view of a high-frequency module and a module substrate according to the seventh preferred embodiment. [Figure 12] FIG. 12A is a cross-sectional view of a high-frequency module according to an eighth preferred embodiment of the present invention, and FIG. 12B is a schematic equivalent circuit diagram of the high-frequency module according to the eighth preferred embodiment of the present invention. [Figure 13] FIG. 13A is a bottom view of the high-frequency module according to the ninth preferred embodiment, and FIG. 13B is a bottom view of the high-frequency module according to a modified example of the ninth preferred embodiment. [Figure 14] FIG. 14A is a cross-sectional view of a high-frequency module according to a tenth preferred embodiment, and FIG. 14B is a cross-sectional view of a high-frequency module according to a modified example of the tenth preferred embodiment. [Figure 15] 15A and 15B are cross-sectional views of a high-frequency module according to another modified example of the tenth preferred embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] [First Example] A high frequency module according to a first embodiment will be described with reference to Figures 1A to 3C. Figure 1A is a cross-sectional view of the high frequency module according to the first embodiment.

[0009] The high-frequency module 50 according to the first embodiment includes a plurality of sub-modules 20. Each of the plurality of sub-modules 20 includes a plurality of electronic components 30 and a first support member 22 made of resin that covers and supports the plurality of electronic components 30.

[0010] Each of the electronic components 30 has a plurality of internal terminals 31, and the plurality of internal terminals 31 are exposed on one surface of the submodule 20. The surface on which the plurality of internal terminals 31 are exposed is referred to as the first surface 21A. One surface of the first support member 22 and the exposed surfaces of the plurality of first electrodes 31A form the substantially flat first surface 21A. The first support member 22 includes a top surface 21T facing in the direction opposite to the first surface 21A, and a side surface 21S connecting the first surface 21A and the top surface 21T.

[0011] The electronic components 30 are, for example, individual components such as semiconductor integrated circuits, surface mount inductors, capacitors, etc. Each of the sub-modules 20 has at least one function, for example, an RF front end, power management, etc.

[0012] The internal terminal 31 includes two layers, a first electrode 31A made of Cu, and a solder 31B. The first electrode 31A is exposed on the first surface 21A of the submodule 20. The top surface 21T and the side surface 21S of the first support member 22 of at least one submodule 20 (for example, the submodule 20 on the right side in FIG. 1A) are covered with a first conductive film 23. The first conductive film 23 functions as an electromagnetic shielding film. The first conductive film 23 may be a full-surface film (solid film) provided over the entire area of ​​a specific range, or may be a patterned film having an electromagnetic shielding function, such as a mesh-like film or a striped film. At least one of the multiple first electrodes 31A exposed on the first surface 21A is exposed on the side surface 21S of the first support member 22 and is electrically connected to the first conductive film 23.

[0013] A second support member 40 made of resin contacts at least the first surfaces 21A of the submodules 20 and supports the submodules 20. The first surfaces 21A of the submodules 20 are supported in an arrangement and position facing the same direction. The high-frequency module 50 has a mounting surface 41A facing the same direction as the first surfaces 21A of the submodules 20. The second support member 40 has a top surface 41T facing the opposite direction to the mounting surface 41A, and a side surface 41S connecting the mounting surface 41A and the top surface 41T.

[0014] In the submodule 20 in which the first conductive film 23 is provided, the first surface 21A of the first support member 22 and the surface of the first conductive film 23 are in close contact with the second support member 40. In the submodule 20 in which the first conductive film 23 is not provided, the top surface 21T, the side surface 21S and the first surface 21A of the first support member 22 are in close contact with the second support member 40.

[0015] The multiple external terminals 42 are respectively connected to the multiple internal terminals 31 and exposed on the mounting surface 41A. The external terminals 42 include two layers: a second electrode 42A made of Cu exposed on the mounting surface 41A and a solder 42B connected to the internal terminals 31. At least one external terminal 42 is connected to the first conductive film 23 via the first electrode 31A.

[0016] In addition to the second electrode 42A, a first wiring 43 is arranged on the mounting surface 41A. The first wiring 43 is connected to one internal terminal 31 of one submodule 20 via solder 42B, and is also connected to one internal terminal 31 of the other submodule 20 via solder 42B. In other words, the first wiring 43 connects one submodule 20 to the other submodule 20. The surfaces of the multiple external terminals 42, the surface of the first wiring 43, and the surface of the second support member 40 form a substantially flat mounting surface 41A.

[0017] 1B is a cross-sectional view of the high-frequency module 50 and module substrate 80 shown in FIG. 1A. A plurality of lands 81 are arranged on the surface of the module substrate 80. A plurality of external terminals 42 of the high-frequency module 50 are connected to the plurality of lands 81 via solder 85, respectively, thereby mounting the high-frequency module 50 on the module substrate 80. The first conductive film 23 is connected to the ground potential of the module substrate 80 via the first electrode 31A exposed on the side surface 21S of the submodule 20, the external terminal 42, the solder 85, and the land 81.

[0018] 2A to 2E, a method for manufacturing the submodule 20 will be described. The drawings from Fig. 2A to Fig. 2D are cross-sectional views of the submodule 20 during the manufacturing process, and Fig. 2E is a cross-sectional view of the submodule 20.

[0019] As shown in FIG. 2A, a plurality of electronic components 30 and a temporary substrate 90 are prepared. A printed circuit board can be used as the temporary substrate 90. A plurality of first electrodes 31A are arranged on the surface of the temporary substrate 90, and solder S is placed thereon. At the stage shown in FIG. 2A, the submodule 20 is not divided into individual pieces, but FIG. 2A shows only an area corresponding to one submodule 20. The electronic component 30, such as a semiconductor integrated circuit, has a plurality of solder balls 31BA for mounting. The electronic component 30, such as a surface-mount type discrete component, has electrodes 31C for mounting.

[0020] 2B, the solder balls 31BA or electrodes 31C of the electronic component 30 are placed on the solder S of the temporary substrate 90 and a reflow process is performed. This fixes the electronic component 30 to the temporary substrate 90. The reflow process integrates the solder balls 31BA and the solder S to form internal terminals 31 made of the solder 31B and the first electrodes 31A. In the electronic component 30 provided with the electrodes 31C, the solder S melts and solidifies to form the solder 31B and the first electrodes 31A to form the internal terminals 31.

[0021] 2C, a first support member 22 is formed by covering a plurality of electronic components 30 with a sealing resin. For example, a transfer molding method, a compression molding method, or the like can be used to form the first support member 22. For example, an epoxy resin is used as the first support member 22.

[0022] As shown in FIG. 2D, the temporary substrate 90 (FIG. 2C) is ground to expose the multiple first electrodes 31A. The first support member 22 is exposed in the area where the first electrodes 31A are not arranged. This exposes the flat first surface 21A including the surface of the first support member 22 and the surfaces of the multiple first electrodes 31A. After grinding, the substrate is separated into individual submodules 20. Through the steps up to this point, a submodule 20 (the submodule 20 on the left side in FIG. 1A) without the first conductive film 23 is completed.

[0023] As shown in FIG. 2E, a first conductive film 23 is formed on the top surface 21T and the side surface 21S of the first support member 22. The first conductive film 23 may be made of, for example, Cu, Ag, Ni, or the like. The first conductive film 23 may have a laminated structure of multiple metals. The first conductive film 23 may be formed by, for example, sputtering. Through these steps, a submodule 20 having the first conductive film 23 (the submodule 20 on the right side in FIG. 1A) is completed.

[0024] Next, a method for manufacturing the high-frequency module 50 will be described with reference to Figures 3A to 3C. Figures 3A, 3B, and 3C are cross-sectional views of the high-frequency module 50 (Figure 1A) during the course of its manufacture.

[0025] 3A, a temporary substrate 91, a submodule 20 provided with a first conductive film 23, and a submodule 20 not provided with the first conductive film 23 are prepared. A plurality of second electrodes 42A and first wirings 43 are arranged on the surface of the temporary substrate 91. Solder S is placed on the second electrodes 42A and a portion of the first wirings 43. A printed circuit board can be used as the temporary substrate 91. Solder balls 42BA are placed on the exposed surfaces of the internal terminals 31 of the submodule 20.

[0026] 3B, the submodule 20 is placed on a temporary substrate 91 and a reflow process is performed to fix the submodule 20 to the temporary substrate 91. The external terminal 42 is formed by the solder 42B, which is an integrated combination of the solder ball 42BA and the solder S, and the second electrode 42A. One internal terminal 31 of one submodule 20 and one internal terminal 31 of another submodule 20 are connected via the solder 42B, the first wiring 43, and the other solder 42B.

[0027] 3C, the plurality of sub-modules 20 are sealed with resin to form the second support member 40. The second support member 40 can be formed by, for example, a transfer molding method, a compression molding method, or the like. The second support member 40 can be made of, for example, epoxy resin.

[0028] After the second support member 40 is formed, the temporary substrate 91 is ground to expose the external terminals 42, the first wiring 43, and the second support member 40. A substantially flat mounting surface 41A is formed by the surfaces of the external terminals 42, the surfaces of the first wiring 43, and the surface of the second support member 40. Finally, the substrate 91 is divided into individual high-frequency modules 50, thereby completing the high-frequency modules 50 shown in FIG. 1A.

[0029] Next, the excellent effects of the first embodiment will be described. The high-frequency module 50 according to the first embodiment does not include an interposer. In other words, the submodule 20 included in the high-frequency module 50 according to the first embodiment is directly mounted on the module substrate 80 without an interposer, so that it is possible to achieve a low height. The top surface 21T and the side surface 21S of at least one submodule 20 among the multiple submodules 20 are covered with a first conductive film 23. This first conductive film 23 functions as an electromagnetic shielding film. Therefore, it is possible to reduce electromagnetic interference between the submodule 20 in which the first conductive film 23 is provided and the other submodules 20. In particular, it is preferable to provide the first conductive film 23, which functions as an electromagnetic shielding film, preferentially to a submodule 20 having a low operating frequency and a high output.

[0030] The multiple submodules 20 in the high-frequency module 50 are connected to each other by the first wiring 43. Therefore, there is no need to arrange wiring for connecting the multiple submodules 20 to each other in the module substrate 80. This allows the module substrate 80 to be made thinner.

[0031] Next, high-frequency modules according to various modifications of the first embodiment will be described. In the first embodiment, the first conductive film 23 is provided on one submodule 20 among the multiple submodules 20, but the first conductive film 23 may be provided on all of the submodules 20. Also, in the first embodiment, the first conductive film 23 covers the entire top surface 21T and side surface 21S of the first support member 22, but it may cover a partial area of ​​the top surface 21T and side surface 21S of the first support member 22. For example, the first conductive film 23 may be provided only on the side surface 21S of at least one of the side surfaces 21S of two adjacent submodules 20 that face each other.

[0032] In the first embodiment, the first surface 21A, the side surfaces 21S, and the top surface 21T of the submodule 20 are covered with the second support member 40. If the second support member 40 can stably support the submodule 20 only with the first surface 21A and the side surfaces 21S of the submodule 20, it is not necessary to dispose the second support member 40 on the top surface 21T of the submodule 20. By employing this configuration, it is possible to further reduce the height of the high-frequency module 50.

[0033] In the first embodiment, the first conductive film 23 functioning as an electromagnetic shielding film is connected to the ground potential of the module substrate 80 via the first electrode 31A exposed on the side surface 21S of the submodule 20. As another configuration, the first conductive film 23 may be in an electrically floating state without being connected to the first electrode 31A. The first conductive film 23 can function as an electromagnetic shielding film even when in an electrically floating state.

[0034] [Second Example] Next, a high-frequency module according to a second embodiment will be described with reference to Fig. 4. Below, a description of the configuration common to the high-frequency module 50 according to the first embodiment described with reference to Figs. 1A to 3C will be omitted.

[0035] 4 is a cross-sectional view of a high-frequency module 50 according to the second embodiment. In the first embodiment (FIG. 1), a plurality of second electrodes 42A and first wirings 43 are arranged on the mounting surface 41A of the high-frequency module 50. In contrast, in the second embodiment, a conductor pattern 44 is further arranged on the mounting surface 41A. The conductor pattern 44 is connected to the ground potential of the electronic component 30 via solder 42B and the internal terminal 31. The conductor pattern 44 is arranged in an area other than necessary wiring such as signal wiring, control wiring, and power supply wiring in a plan view, and overlaps with a part of the submodule 20. The conductor pattern 44 functions as an electromagnetic shielding film for the submodule 20.

[0036] Next, the advantageous effects of the second embodiment will be described. In the first embodiment, electromagnetic shielding is ensured in the upward and lateral directions by the first conductive film 23 disposed on the top surface 21T and side surface 21S of the submodule 20. In the second embodiment, electromagnetic shielding can also be ensured in the downward direction of the submodule 20 by the conductor pattern 44.

[0037] [Third Example] Next, a high-frequency module according to a third embodiment will be described with reference to Fig. 5A. Below, a description of the configuration common to the high-frequency module 50 according to the first embodiment described with reference to Figs. 1A to 3C will be omitted.

[0038] 5A is a cross-sectional view of a high-frequency module 50 according to a third embodiment. In the first embodiment (FIG. 1A), a plurality of sub-modules 20 are supported by the second support member 40. In the third embodiment, in addition to the plurality of sub-modules 20, an antenna component 60 is supported by the second support member 40.

[0039] The antenna component 60 includes an antenna element 61 and an antenna terminal 62. For example, a patch antenna, a dipole antenna, or the like is used as the antenna element 61. In Fig. 5A, the antenna element 61 is represented by a circuit symbol. The antenna terminal 62 is exposed on the mounting surface 41A of the high-frequency module 50.

[0040] The sub-modules 20 each include a radio frequency integrated circuit component 30RF (RFIC) as one of the electronic components 30. Each of the sub-modules 20 performs down-conversion, up-conversion, amplification, etc. of a radio frequency signal. A second wiring 47 is disposed on the mounting surface 41A of the radio frequency module 50. The second wiring 47 connects one internal terminal 31 of one of the sub-modules 20 to the antenna terminal 62. The sub-module 20 connected to the antenna component 60 is provided with a first conductive film 23 that functions as an electromagnetic shielding film.

[0041] The sub-modules 20 that are not connected to the antenna component 60 are connected to an antenna provided outside the high-frequency module 50 .

[0042] Next, the excellent effects of the third embodiment will be described. In the third embodiment, an antenna component 60 and a plurality of sub-modules 20 having an RF front-end function are mounted on one high-frequency module 50. Since one sub-module 20 and the antenna component 60 are connected by the second wiring 47 inside the high-frequency module 50, there is no need to arrange an external power supply line. This makes it possible to reduce loss of the high-frequency signal supplied to the antenna component 60.

[0043] Since the submodule 20 connected to the antenna component 60 is provided with a first conductive film 23 that functions as an electromagnetic shielding film, it is possible to reduce electromagnetic interference between the antenna component 60 and the submodule 20, and electromagnetic interference between multiple submodules 20.

[0044] Next, a high-frequency module according to a modification of the third embodiment will be described with reference to Fig. 5B. Fig. 5B is a cross-sectional view of a high-frequency module 50 according to a modification of the third embodiment. In the modification shown in Fig. 5B, the high-frequency module 50 includes a plurality of antenna components 60. The plurality of antenna components 60 are connected to any of a plurality of sub-modules 20 in the high-frequency module 50 via second wiring 47. As in this modification, the antenna components 60 connected to each of the plurality of sub-modules 20 may be disposed in the high-frequency module 50.

[0045] [Fourth Example] Next, a high-frequency module according to a fourth embodiment will be described with reference to Fig. 6. Below, a description of the configuration common to the high-frequency module 50 according to the modified example of the third embodiment described with reference to Fig. 5B will be omitted.

[0046] FIG. 6 is a cross-sectional view of a high-frequency module 50 according to a fourth embodiment. In the modified example of the third embodiment (FIG. 5B), no conductive film is arranged on the top surface 41T and side surface 41S of the second support member 40. In contrast, in the fourth embodiment, the second conductive film 45 is arranged on almost the entire top surface 41T of the second support member 40. That is, the antenna component 60 is included in the second conductive film 45 in a plan view. Note that no conductive film is arranged on the side surface 41S of the second support member 40. The second conductive film 45 can be formed on the top surface 41T of the second support member 40 by sputtering or the like before the high-frequency module 50 is divided into individual pieces.

[0047] Next, the excellent effects of the fourth embodiment will be described. In the fourth embodiment, the second conductive film 45 disposed on the top surface 41T of the second support member 40 functions as an electromagnetic shielding film. The second conductive film 45 blocks radio waves propagating upward from the antenna component 60 (in the direction in which the top surface 41T of the second support member 40 faces). Radio waves propagating laterally from the antenna component 60 (in the direction in which the side surface 41S of the second support member 40 faces) are not blocked and are radiated to the outside. In this way, the high-frequency module 50 according to the fourth embodiment can control the directivity of radio waves. The configuration of the fourth embodiment is effective when the main beam of the antenna component 60 is directed laterally.

[0048] Next, a high-frequency module according to a modification of the fourth embodiment will be described with reference to FIG. 7A. FIG. 7A is a cross-sectional view of a high-frequency module 50 according to a modification of the fourth embodiment. In the fourth embodiment (FIG. 6), the second conductive film 45 is in an electrically floating state. In contrast, in the modification shown in FIG. 7A, the second conductive film 45 is connected to the second electrode 42A on the mounting surface 41A by a conductor column 49 that penetrates the second support member 40 in the height direction. The second electrode 42A connected to the conductor column 49 is connected to the ground potential in the high-frequency module 50. This allows the potential of the second conductive film 45 to be fixed to the ground.

[0049] Next, referring to FIG. 7B, a high-frequency module according to another modification of the fourth embodiment will be described. FIG. 7B is a cross-sectional view of a high-frequency module 50 according to another modification of the fourth embodiment. In the fourth embodiment (FIG. 6), the second conductive film 45 is disposed over the entire top surface 41T of the second support member 40. In contrast, in the modification shown in FIG. 7B, the second conductive film 45 is not disposed in a part of the top surface 41T of the second support member 40 (hereinafter, referred to as an opening 46 of the second conductive film 45). That is, the opening 46 is provided in the second conductive film 45, and a part of the top surface 41T of the second support member 40 is exposed. When the top surface 41T of the second support member 40 is viewed in plan, at least one of the antenna components 60 is disposed at a position overlapping the opening 46. The second conductive film 45 is disposed on the side surface 41S of the second support member 40 near the antenna component 60.

[0050] Next, the excellent effect of the modified example shown in Fig. 7B will be described. Radio waves radiated upward from the antenna component 60 arranged in a region overlapping with the opening 46 of the second conductive film 45 in a plan view are radiated to the outside through the opening 46. When it is desired to direct the main beam of the antenna component 60 arranged in a region overlapping with the opening 46 upward, the configuration of the modified example shown in Fig. 7B is effective.

[0051] [Fifth Example] Next, a high-frequency module according to a fifth embodiment will be described with reference to Fig. 8. Below, a description of the configuration common to the high-frequency module 50 according to the first embodiment described with reference to Figs. 1A to 3C will be omitted.

[0052] 8 is a cross-sectional view of a high-frequency module 50 and a module substrate 80 according to the fifth embodiment. The high-frequency module 50 according to the eighth embodiment includes a plurality of antenna components 60, similar to the high-frequency module 50 according to the modified example of the fourth embodiment shown in FIG. 7B, and a second conductive film 45 is disposed on a partial area of ​​the top surface 41T and the side surface 41S of the second support member 40. Furthermore, a high-frequency connector 83 is mounted on the module substrate 80. In particular, the second conductive film 45 is disposed on a region of the side surface 41S of the second support member 40 facing the connector 83.

[0053] The connector 83 is connected to a baseband integrated circuit component 96 (BBIC) via, for example, a coaxial cable 95. Furthermore, the connector 83 is connected to an external terminal 42 of the submodule 20 via wiring (not shown) in the module substrate 80, lands 81, and solder 85. This submodule 20 includes a high frequency integrated circuit component 30RF as the electronic component 30. Intermediate frequency signals, various control signals, etc. are transmitted between the submodule 20 and the baseband integrated circuit component 96 via the connector 83 and the coaxial cable 95.

[0054] Next, the excellent effects of the fifth embodiment will be described. The second conductive film 45 disposed on the side surface 41S of the second support member 40 facing the connector 83 functions as an electromagnetic shielding film. This makes it possible to improve isolation between the high-frequency circuit in the high-frequency module 50 and the connector 83.

[0055] [Sixth Example] Next, a high-frequency module according to a sixth embodiment will be described with reference to Fig. 9. Below, a description of the configuration common to the high-frequency module 50 according to the first embodiment described with reference to Figs. 1A to 3C will be omitted.

[0056] FIG. 9 is a cross-sectional view of a high-frequency module 50 and a module substrate 80 according to the sixth embodiment. In the first embodiment (FIG. 1A), a plurality of sub-modules 20 are supported by the second support member 40. In contrast, in the sixth embodiment, in addition to the plurality of sub-modules 20, a surface-mounted chip component 70 is supported by the second support member 40. An external terminal 71 of the chip component 70 is exposed on the mounting surface 41A of the high-frequency module 50. Examples of the chip component 70 include surface-mounted ferrite beads, surface-mounted inductors, and surface-mounted bypass capacitors. In FIG. 9, ferrite beads are shown as an example of the chip component 70, but the chip component 70 is not limited to ferrite beads.

[0057] As in the fifth embodiment (FIG. 8), a connector 83 is mounted on a module substrate 80. The connector 83 is connected to an external terminal 71 of the chip component 70 via wiring (not shown), a land 81, and solder 85 in the module substrate 80. The other external terminal 71 of the chip component 70 is connected to one internal terminal 31 of one submodule 20 via wiring 72 arranged on the mounting surface 41A and solder 42B. A high-frequency signal is transmitted between the submodule 20 and the connector 83 through the chip component 70. The chip component 70 is disposed between the submodule 20 to which the chip component 70 is connected and the connector 83 in a plan view.

[0058] Next, the excellent effects of the sixth embodiment will be described. Generally, when chip component 70 is a ferrite bead, chip component 70 is arranged in the vicinity of connector 83. Here, "arranged in the vicinity" means that no other components are arranged between chip component 70 and connector 83 in plan view, and chip component 70 and connector 83 are adjacent to each other. By incorporating chip component 70, which is a ferrite bead, in high-frequency module 50, it is possible to save space compared to a configuration in which ferrite beads are arranged on module substrate 80 outside high-frequency module 50.

[0059] When chip components are mounted on the module substrate 80 in place of the chip components 70 built into the high-frequency module 50, a certain distance must be ensured between the connector 83 and the chip components, and between the chip components and the high-frequency module 50, so as to satisfy the minimum component-to-component distance condition imposed in the mounting process. When the chip components 70 are built into the high-frequency module 50 as in the sixth embodiment, only the distance between the high-frequency module 50 and the connector 83 needs to be considered in order to satisfy the minimum component-to-component distance condition in the mounting process. This makes it possible to save space.

[0060] Next, a high frequency module according to a modification of the sixth preferred embodiment will be described with reference to Fig. 10. Fig. 10 is a cross-sectional view of a high frequency module 50 and a module substrate 80 according to a modification of the sixth preferred embodiment.

[0061] In the sixth embodiment (FIG. 9), no conductive film is disposed on the top surface 41T and side surface 41S of the second support member 40. In contrast, in the modification shown in FIG. 10, a third conductive film 51 is disposed on the top surface 41T and side surface 41S of the second support member 40. The third conductive film 51 is connected to the ground potential of the module substrate 80 via the second electrode 42A exposed on the side surface 41S of the second support member 40, the solder 85, and the land 81.

[0062] 10, the third conductive film 51 functions as an electromagnetic shielding film, and can improve isolation between the connector 83 and the high-frequency circuit in the high-frequency module 50. This makes the high-frequency circuit in the high-frequency module 50 less susceptible to the effects of noise generated from the connector 83. Furthermore, noise generated in the high-frequency module 50 is less likely to leak to the outside.

[0063] [Seventh Example] Next, a high-frequency module according to a seventh preferred embodiment will be described with reference to Fig. 11. Below, a description of the configuration common to the high-frequency module 50 (Fig. 5B) according to a modified example of the third preferred embodiment will be omitted.

[0064] 11 is a cross-sectional view of a high-frequency module 50 and a module substrate 80 according to the seventh embodiment. In the third embodiment (FIG. 5B), a plurality of antenna components 60 connected to two submodules 20 including high-frequency integrated circuit components 30RF are supported by the second support member 40. In contrast, in the seventh embodiment, in addition to the antenna components 60 supported by the second support member 40, a radiating element 65 is arranged on the module substrate 80.

[0065] The multiple radiating elements 65 are arranged on the surface of the module substrate 80 opposite to the surface on which the high-frequency module 50 is mounted. The radiating elements 65, together with a ground plane 66 arranged within the module substrate 80, form a patch antenna. The multiple radiating elements 65 are connected to the multiple external terminals 42 of one submodule 20 via wiring 67 and vias 68 within the module substrate 80, respectively.

[0066] As an example, the radio frequency integrated circuit component 30RF included in the submodule 20 connected to the antenna component 60 performs signal processing conforming to WiGig, and the radio frequency integrated circuit component 30RF included in the submodule 20 connected to the radiating element 65 performs signal processing conforming to the communication standard of the fifth generation mobile communication system (5G). A first conductive film 23 is provided in the submodule 20 that performs signal processing conforming to WiGig.

[0067] Next, the excellent effects of the seventh embodiment will be described. The high-frequency module 50 according to the seventh embodiment is capable of performing communication in compliance with a plurality of different communication standards such as WiGig, 5G, etc. At least one of the two submodules 20 has the first conductive film 23 that functions as an electromagnetic shielding film, so that isolation between the two submodules 20 conforming to different communication standards can be ensured.

[0068] Moreover, one of the antennas for the two communication standards is configured with an antenna component 60 built into the high-frequency module 50, and the other is configured with a radiating element 65 disposed on a module substrate 80. In this way, an antenna with an optimal configuration can be used according to the frequency bands of the different communication standards.

[0069] [Eighth Example] Next, a high-frequency module according to an eighth embodiment will be described with reference to Fig. 12A and Fig. 12B. Below, a description of the configuration common to the high-frequency module 50 according to the first embodiment described with reference to Fig. 1A to Fig. 3C will be omitted.

[0070] Fig. 12A is a cross-sectional view of a high-frequency module 50 according to the eighth embodiment, and Fig. 12B is a schematic equivalent circuit diagram of the high-frequency module 50 according to the eighth embodiment. The high-frequency module 50 includes two submodules 20. One of the submodules 20 includes a DCDC converter 30DC and an output inductor 30L as electronic components 30. The output inductor 30L is connected to the DCDC converter 30DC via wiring 32 in the submodule 20. The submodule 20 including the DCDC converter 30DC is provided with a first conductive film 23 that functions as an electromagnetic shielding film.

[0071] The other sub-module 20 includes a high frequency integrated circuit component 30RF as an electronic component 30. The output inductor 30L is connected to an internal terminal 31 of the high frequency integrated circuit component 30RF via a third wiring 48 arranged on the mounting surface 41A of the high frequency module 50.

[0072] 12B, a low-pass filter is configured by the output inductor 30L and the capacitor C. The capacitor C is built in, for example, the submodule 20 including the output inductor 30L. Power is supplied from the DC-DC converter 30DC to the high-frequency integrated circuit component 30RF via the low-pass filter.

[0073] The output inductor 30L is disposed at a position closer to the submodule 20 connected via the third wiring 48 than any of the other electronic components of the submodule 20, including the output inductor 30L.

[0074] Next, the excellent effects of the eighth embodiment will be described. Since the submodule 20 including the DCDC converter 30DC is provided with the first conductive film 23, the high frequency integrated circuit component 30RF is less susceptible to the switching noise generated by the DCDC converter 30DC. Furthermore, since the output inductor 30L is disposed near the submodule 20 including the high frequency integrated circuit component 30RF, the quality of the power supplied to the high frequency integrated circuit component 30RF can be improved and the voltage drop can be reduced.

[0075] Next, a modification of the eighth embodiment will be described. In the eighth embodiment, the low-pass filter is configured with the output inductor 30L and the capacitor C, but other elements or circuit configurations capable of reducing noise may be used. For example, a capacitor or a ferrite bead may be used instead of the output inductor 30L. For example, instead of connecting the output inductor 30L in series between the high frequency integrated circuit component 30RF and the DCDC converter 30DC, an inductor may be connected between the wiring connecting the high frequency integrated circuit component 30RF and the DCDC converter 30DC and the ground.

[0076] [Ninth Example] Next, a high-frequency module according to a ninth embodiment will be described with reference to Fig. 13A. Below, a description of the configuration common to the high-frequency module 50 according to the first embodiment described with reference to Figs. 1A to 3C will be omitted.

[0077] 13A is a bottom view of a high-frequency module 50 according to the ninth embodiment. A plurality of external terminals 42 are exposed on the mounting surface 41A of the second support member 40. One external terminal 42 connected to the electronic components 30 of one sub-module 20 is connected to an external terminal 42 connected to the electronic components 30 of another sub-module 20 by a first wiring 43. A stub 43S branches off from the first wiring 43. The stub 43S is disposed on the mounting surface 41A of the second support member 40. The stub 43S is an open stub.

[0078] Fig. 13B is a bottom view of a high-frequency module 50 according to a modified example of the ninth embodiment. In the ninth embodiment (Fig. 13A), the stub 43S branching off from the first wiring 43 is an open stub, but in the modified example of the ninth embodiment shown in Fig. 13B, the stub 43S is a short stub. A ground plane 43G is formed on the mounting surface 41A of the second support member 40, and the tip of the stub 43S is connected to the ground plane 43G. The ground plane 43G is connected to an external terminal 42G that is connected to a ground terminal of at least one electronic component 30.

[0079] Next, the excellent effects of the ninth embodiment and its modifications will be described. In the ninth embodiment, similarly to the first embodiment, it is possible to reduce the height of the high-frequency module and also to reduce electromagnetic interference between the sub-modules 20.

[0080] Furthermore, in the ninth embodiment and its modified examples, the stub 43S can match the impedance between the two submodules 20. The stub 43S can be formed on the mounting surface 41A of the second support member 40 at the same time as the first wiring 43 is formed. Therefore, an impedance matching circuit can be configured without mounting circuit components for impedance matching.

[0081] [Tenth Example] Next, a high-frequency module according to a tenth embodiment will be described with reference to Fig. 14A. Below, a description of the configuration common to the high-frequency module 50 according to the first embodiment described with reference to Figs. 1A to 3C will be omitted.

[0082] 14A is a cross-sectional view of a high-frequency module 50 according to the tenth embodiment. The high-frequency module 50 according to the tenth embodiment includes a plurality of second sub-modules 120 in addition to a plurality of sub-modules 20. Hereinafter, the sub-modules 20 will be referred to as first sub-modules 20 to distinguish them from the second sub-modules 120.

[0083] Each of the second sub-modules 120 includes a plurality of second electronic components 130 and a third support member 122 that covers and supports the plurality of second electronic components 130. A plurality of second internal terminals 131 connected to the second electronic components 130 are exposed on one surface of the third support member 122. The surface of the third support member 122 on which the second internal terminals 131 are exposed faces the opposite direction to the surface of the first support member 22 on which the internal terminals 31 are exposed.

[0084] The multiple first submodules 20 are covered and supported by a first portion 40A of the second support member 40, and the multiple second submodules 120 are covered and supported by a second portion 40B of the second support member 40. A multiple number of second external terminals 142 are exposed on a surface 41B of the second support member 40 opposite to a mounting surface 41A on which the multiple external terminals 42 are exposed. The multiple second external terminals 142 are connected to the multiple second internal terminals 131, respectively.

[0085] The structure consisting of the first portion 40A of the second support member 40, the multiple first sub-modules 20, and the multiple external terminals 42 is the same as the structure of the high-frequency module 50 (FIG. 1A) according to the first embodiment. In addition, the structure consisting of the second portion 40B of the second support member 40, the multiple second sub-modules 120, and the multiple second external terminals 142 is also the same as the structure of the high-frequency module 50 (FIG. 1A) according to the first embodiment.

[0086] Next, a method for manufacturing the high-frequency module according to the tenth embodiment will be described. A structure is fabricated using a method similar to that for manufacturing the high-frequency module 50 according to the first embodiment, the structure including the first portion 40A of the second support member 40, the multiple first submodules 20 supported by the first portion 40A, and the multiple external terminals 42. A structure is fabricated using a similar method, the structure including the second portion 40B of the second support member 40, the multiple second submodules 120 supported by the second portion 40B, and the multiple second external terminals 142. The high-frequency module according to the tenth embodiment can be fabricated by bonding the first portion 40A and the second portion 40B of the second support member 40 together.

[0087] Next, the excellent effects of the tenth embodiment will be described. In the tenth embodiment, as in the first embodiment, it is possible to reduce the height of the high-frequency module and to reduce electromagnetic interference between the first submodule 20 and the second submodule 120. Furthermore, in the tenth embodiment, the first submodule 20 and the second submodule 120 are stacked in a direction perpendicular to the mounting surface 41A, so that the mounting density of the electronic component 30 and the second electronic component 130 can be increased.

[0088] Next, a modification of the tenth embodiment will be described. In the tenth embodiment, the multiple second submodules 120 are supported by the second portion 40B of the second support member 40, but a configuration in which one second submodule 120 is supported by the second portion 40B of the second support member 40 may also be used. In addition, at least one of the multiple first submodules 20 includes a first conductive film 23 (FIG. 1A) that functions as a shielding film, but none of the multiple second submodules 120 may include a conductive film that functions as a shielding film.

[0089] Next, a high-frequency module according to a modification of the tenth embodiment will be described with reference to Fig. 14B. Fig. 14B is a cross-sectional view of a high-frequency module according to a modification of the tenth embodiment. In the tenth embodiment (Fig. 14A), a second support member 40 is interposed between the first sub-module 20 and the second sub-module 120.

[0090] 14B, on the other hand, the surface of the first submodule 20 opposite to the surface on which the multiple internal terminals 31 are arranged (hereinafter referred to as the top surface) and the surface of the second submodule 120 opposite to the surface on which the multiple second internal terminals 131 are arranged (hereinafter referred to as the top surface) face each other without the second support member 40. For example, a layer made of adhesive is arranged between the two.

[0091] This structure may be produced, for example, by transfer molding the structure up to the intermediate manufacturing stage shown in Fig. 3B of the manufacturing process of the high-frequency module 50 according to the first embodiment, so that the top surface of at least one first sub-module 20 is exposed when sealing with resin. Alternatively, as shown in Fig. 3C, after sealing the first sub-module 20 with the second support member 40, the second support member 40 may be ground or polished until the top surface of the first sub-module 20 is exposed. A structure covered with the second portion 40B of the second support member 40 can also be produced in a similar manner.

[0092] In the modification shown in FIG. 14B, the height of the high-frequency module can be further reduced as compared with the tenth preferred embodiment.

[0093] Next, a high-frequency module according to another modification of the tenth embodiment will be described with reference to Figures 15A and 15B. Figures 15A and 15B are cross-sectional views of a high-frequency module 50 according to another modification of the tenth embodiment.

[0094] In the tenth embodiment (FIG. 14A), the second support member 40 has a clear boundary between a first portion 40A that supports a plurality of first submodules 20 and a second portion 40B that supports a plurality of second submodules 120. In contrast, in the modified example shown in FIGS. 15A and 15B, the second support member 40 is made of a single resin member.

[0095] Next, a manufacturing method of the high-frequency module 50 according to the modified example shown in Fig. 15A will be described. In the intermediate manufacturing stage of the high-frequency module 50 according to the first embodiment shown in Fig. 3B, a temporary substrate 91 on which a plurality of first submodules 20 are mounted and another temporary substrate 91 on which a plurality of second submodules 120 are mounted are placed with their mounting surfaces facing each other, and the second support member 40 is filled between the two temporary substrates 91 by using a transfer molding method. Thereafter, the two temporary substrates 91 are ground and removed, thereby completing the high-frequency module according to the modified example shown in Fig. 15A.

[0096] 14B, in high-frequency module 50 according to the modification shown in FIG. 15B, second support member 40 is not interposed between the top surface of first submodule 20 and the top surface of second submodule 120. For example, the top surface of first submodule 20 is in contact with the top surface of second submodule 120. In the high-frequency module according to the modification shown in FIG. 15B, the top surfaces of first submodule 20 and second submodule 120 may be in contact with each other when second support member 40 is filled between two temporary substrates 91 by using the transfer molding method.

[0097] In the modified example shown in FIGS. 15A and 15B, the number of manufacturing steps can be reduced compared to the tenth embodiment (FIG. 14A).

[0098] The above-mentioned embodiments are merely examples, and it goes without saying that partial replacement or combination of the configurations shown in different embodiments is possible. Similar effects due to similar configurations of multiple embodiments are not mentioned in each embodiment. Furthermore, the present invention is not limited to the above-mentioned embodiments. For example, it will be obvious to those skilled in the art that various modifications, improvements, combinations, etc. are possible. [Explanation of symbols]

[0099] 20 Submodules 21A 1st page 21S side 21T Top 22 First support member 23 First conductive film 30 Electronic Components 30DC DCDC Converter 30L Output inductor 30RF High Frequency Integrated Circuit Components 31 Internal terminal 31A 1st electrode 31B Solder 31BA solder ball 31C Mounting electrodes 32 Wiring 40 Second support member 40A First portion of second support member 40B Second portion of second support member 41A Mounting surface 41S side 41T Top 42 External terminal 42A 2nd electrode 42B Solder 42BA solder ball 42G External terminal connected to the ground terminal 43 1st wiring 43G Ground Plane 43S stub 44 Conductor Pattern 45 Second conductive film 46 Aperture 47 2nd wiring 48 3rd wiring 49 Conductor Pillar 50 High Frequency Module 51 Third conductive film 60 Antenna parts 61 Antenna element 62 Antenna terminal 65 Radiating element 66 Ground Plane 67 Wiring 68 Via 70 Ferrite beads 71 Ferrite bead external terminal 72 Wiring 80 Module Board 81 rand 83 Connector 85 Solder 90, 91 Temporary board 95 Coaxial Cable 96 Baseband Integrated Circuit Components 120 Second submodule 122 Third support member 130 Second Electronic Parts 131 2nd internal terminal 142 Second external terminal

Claims

1. It has multiple sub-modules, Each of the plurality of sub-modules comprises: a plurality of electronic components each including a plurality of internal terminals; a first support member that covers and supports the electronic components so as to expose the internal terminals; Including, moreover, a second support member that covers and supports the plurality of sub-modules; a plurality of external terminals connected to the plurality of internal terminals, respectively, and exposed from the second support member; Equipped with At least one of the plurality of sub-modules is a high-frequency module having a first conductive film provided on at least a partial area of ​​the first support member.

2. 2. The high-frequency module according to claim 1, wherein a surface of the first support member on which the internal terminals of the sub-modules are exposed and a surface of the second support member on which the external terminals are exposed face in the same direction.

3. 3. The high frequency module according to claim 1, wherein all of the plurality of sub-modules have the first conductive film.

4. 3. The high-frequency module according to claim 1, further comprising a first wiring arranged on a surface of the second support member on which the plurality of external terminals are exposed, the first wiring connecting one of the plurality of internal terminals of one submodule among the plurality of submodules to one of the plurality of internal terminals of another submodule.

5. The high frequency module according to claim 4 , further comprising a stub arranged on a surface of the second support member on which the plurality of external terminals are exposed and branching off from the first wiring.

6. 3. The high frequency module according to claim 1, further comprising at least one antenna component covered and supported by the second support member, the antenna component having an antenna element and an antenna terminal exposed from the second support member.

7. 7. The high-frequency module according to claim 6, wherein the second support member has a top surface facing the opposite side to the surface on which the plurality of external terminals are exposed, and further comprises a second conductive film provided on the top surface of the second support member.

8. 8. The high-frequency module according to claim 7, wherein a portion of a top surface of the second support member is exposed from the second conductive film, and when the top surface of the second support member is viewed in a plane, at least one of the antenna components is positioned in a position overlapping with the exposed area of ​​the top surface of the second support member.

9. a second wiring is disposed on a surface of the second support member on which the plurality of external terminals are exposed, the second wiring connecting one of the plurality of internal terminals of one of the plurality of sub-modules to the antenna terminal, The high frequency module according to claim 6 , wherein one of the plurality of sub-modules connected to the second wiring includes a high frequency integrated circuit component as one of the plurality of electronic components.

10. 7. The high frequency module according to claim 6, wherein at least two of said plurality of sub-modules each include, as one of said plurality of electronic components, a high frequency integrated circuit component that performs signal processing according to mutually different communication standards.

11. One of the plurality of sub-modules includes a DC-DC converter as one of the plurality of electronic components, and an output inductor connected to the DC-DC converter; a third wiring is disposed on a surface of the second support member on which the plurality of external terminals are exposed, the third wiring connecting the output inductor to one of the plurality of internal terminals of a submodule other than the submodule including the output inductor among the plurality of submodules; 3. The high-frequency module according to claim 1, wherein the output inductor is disposed closer to the submodule connected by the third wiring than any of the other electronic components of the submodule including the output inductor.

12. moreover, a module substrate having a plurality of lands to which the plurality of external terminals are connected; A connector mounted on the module board; The high frequency module according to claim 1 , further comprising:

13. at least one surface-mount chip component supported by the second support member and having a terminal exposed on a surface of the second support member on which the plurality of external terminals are exposed; 13. The high-frequency module according to claim 12, wherein the chip component is connected to one of the plurality of sub-modules and is disposed, in a plan view, between the sub-module to which the chip component is connected and the connector.

14. 3. The high frequency module according to claim 1, further comprising a third conductive film disposed on a surface of the second support member other than the surface on which the plurality of external terminals are exposed.

15. moreover, at least one second sub-module; Each of the second sub-modules comprises: a plurality of second electronic components including a plurality of second internal terminals; a third support member that covers and supports the second electronic components so as to expose the second internal terminals; a plurality of second external terminals connected to the plurality of second internal terminals; Including, 3. The high-frequency module according to claim 1, wherein the second sub-module is supported by the second support member so that the second external terminals are exposed on a surface of the second support member opposite to a surface on which the second external terminals are exposed.

16. 16. The high-frequency module according to claim 15, wherein the second support member includes a first portion covering the plurality of sub-modules and a second portion covering the second sub-module, the first portion being adhered to the second portion.

17. 16. The high-frequency module according to claim 15, wherein a surface of at least one of the plurality of submodules opposite to a surface on which the plurality of internal terminals are arranged and a surface of the second submodule opposite to a surface on which the plurality of second internal terminals are arranged face each other without the second support member interposed therebetween.

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