Information processing system, temperature control method and heat treatment device

Abstract

To provide a technique for improving the uniformity of temperature distribution in a treatment container during a heat treatment of a substrate to be treated using a simulation model.SOLUTION: An information processing system that includes a heat treatment apparatus that heat-treats a substrate to be treated, and an information processing device that outputs a target temperature used to control a heating unit, includes: a temperature measuring unit that measures the temperature distribution in a direction in which the substrate to be treated is arranged; a simulation execution unit that executes a simulation of the temperature distribution during heat treatment of the substrate to be treated in a treatment container using a standard or individual simulation model; a model correction unit that corrects a standard simulation model to an individual simulation model on the basis of a difference between the measured temperature distribution and the temperature distribution that is the result of the simulation; and a correction unit that corrects the target temperature using the temperature distribution that is the result of a simulation using the individual simulation model.SELECTED DRAWING: Figure 13

Description

[Technical field]

[0001] The present disclosure relates to an information processing system, a temperature control method, and a heat treatment apparatus. [Background technology]

[0002] Conventionally, heat treatment apparatuses have been used for manufacturing semiconductor devices, for example. The heat treatment apparatus accommodates wafers to be treated in a process tube, and applies a predetermined heat treatment to the wafers by heating them with a cylindrical heater that is coaxially disposed around the process tube. In order to apply uniform heat treatment to all the wafers, which are installed at different positions in the process tube, it is required to form a uniform heating area with a constant temperature distribution in the process tube.

[0003] In conventional heat treatment devices, temperature sensors are provided at a number of predetermined locations in a process tube, and output values ​​of these temperature sensors are compared with desired output values ​​at each temperature sensor when a predetermined uniform heating area is formed in the process tube. In conventional heat treatment devices, a computer is used to control the heating method by the heater so that the output value of the temperature sensor during actual heat treatment approaches a predetermined ideal output value.

[0004] Conventional heat treatment devices can only measure the temperature at multiple points in a process tube where a temperature sensor is installed. For this reason, there is a heat treatment device that is provided with a temperature measurement element that is movable in the wafer arrangement direction in the process tube, and that continuously measures the temperature distribution while moving the temperature measurement element (for example, see Patent Document 1). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 1-309318 Summary of the Invention [Problem to be solved by the invention]

[0006] The present disclosure provides a technique for improving the uniformity of the temperature distribution in a processing chamber during heat processing of a substrate to be processed, using a simulation model. [Means for solving the problem]

[0007] According to one aspect of the present disclosure, an information processing system includes a heat treatment device having a heating unit for heating a substrate to be processed and for heat-treating the substrate to be processed in a processing vessel, and an information processing device for outputting a target temperature used for controlling the heating unit, the information processing system including: a heat treatment device for heat-treating the substrate to be processed in a processing vessel; and an information processing device for outputting a target temperature used for controlling the heating unit, the information processing system measuring a temperature distribution in an arrangement direction of the substrate to be processed at a position between the heating unit and the substrate to be processed in the processing vessel. Inside the processing vessel A temperature measuring unit; a post-installed temperature measuring unit for measuring a temperature distribution in an arrangement direction of the substrates to be processed, the post-installed temperature measuring unit being located between the heating unit and the substrates to be processed in the processing chamber; a simulation execution unit that executes a simulation of the temperature distribution during the heat treatment of the substrate to be processed in the processing vessel by using a standard simulation model of the heat treatment apparatus or an individual simulation model reflecting an individual difference between the heat treatment apparatuses; Inside the processing vessel Temperature measurement part and the retrofit temperature measuring unit. a model correction unit that corrects the standard simulation model to the individual simulation model based on a difference between the temperature distribution measured by the temperature distribution measuring unit and the temperature distribution that is a result of the simulation using the standard simulation model; and The temperature measured by the temperature measuring unit in the processing vessel A correction unit that corrects the target temperature. and each of the standard simulation model and the individual simulation model is characterized in that heat exchanged in the heat treatment device is modeled. do. Effect of the Invention

[0008] According to the present disclosure, the uniformity of the temperature distribution in a processing chamber during heat processing of a substrate to be processed can be improved by using a simulation model. [Brief description of the drawings]

[0009] [Figure 1] 1 is a vertical cross-sectional view that illustrates a schematic diagram of a heat treatment apparatus according to an embodiment of the present invention. [Diagram 2]FIG. 2 is a perspective view showing a loading area. [Diagram 3] FIG. 1 is a perspective view showing an example of a boat. [Figure 4] FIG. 2 is a cross-sectional view showing an outline of the configuration of a heat treatment furnace. [Diagram 5] FIG. 13 is a diagram showing an example of a difference in temperature profile due to an instrumental difference. [Figure 6] 11 is a flowchart of an example of a processing procedure for correcting differences between heat treatment apparatuses to achieve uniformity in a temperature profile. [Figure 7] 2 is an explanatory diagram illustrating a schematic positional relationship between a heater, a temperature sensor in a processing vessel, an additional temperature sensor, and a wafer; FIG. [Figure 8] 11 is an explanatory diagram showing a temperature difference between the temperature measured by the post-installation temperature sensor Aaf and the temperature measured by the processing vessel internal temperature sensor Ai. FIG. [Figure 9] FIG. 13 is a diagram illustrating an example of the use of a digital twin of a heat treatment apparatus according to the present embodiment. [Figure 10] FIG. 13 is a diagram illustrating an example of the use of a digital twin of a heat treatment apparatus according to the present embodiment. [Figure 11] FIG. 13 is a diagram illustrating an example of the use of a digital twin of a heat treatment apparatus according to the present embodiment. [Figure 12] 11 is an explanatory diagram showing a temperature deviation between the measured temperature of the post-installation temperature sensor Aaf, the predicted temperature at a position where the post-installation temperature sensor Aaf is not present, predicted by an individual simulation model, and the measured temperature of the temperature sensor Ai inside the processing vessel. FIG. [Figure 13] 4 is a functional block diagram of an example of a control unit of the heat treatment apparatus according to the embodiment. FIG. [Figure 14] 11 is a flowchart showing an example of a processing procedure for correcting differences between heat treatment apparatuses according to the present embodiment to achieve uniformity in a temperature profile. [Figure 15] 1 is a configuration diagram of an example of an information processing system according to an embodiment of the present invention. [Figure 16] FIG. 2 is a diagram illustrating a hardware configuration of an example of a computer. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0011] [First embodiment] Fig. 1 is a vertical cross-sectional view that shows a schematic diagram of a heat treatment apparatus according to the present embodiment, Fig. 2 is a perspective view that shows a schematic diagram of a loading area, and Fig. 3 is a perspective view that shows a schematic diagram of an example of a boat.

[0012] The heat treatment apparatus 10 includes a vertical heat treatment furnace 60, which will be described later, and can hold and accommodate a plurality of wafers W at predetermined intervals along the vertical direction in a boat, and can perform various heat treatments such as oxidation, diffusion, and low-pressure CVD on the wafers W. In the following, an example will be described in which the heat treatment apparatus is applied to oxidize the surface of the wafer W by supplying a processing gas, for example, water vapor, to the wafer W placed in a processing vessel 65, which will be described later. The wafer W is an example of a substrate to be processed. The substrate to be processed is not limited to a circular wafer W.

[0013] 1 includes a mounting table (load port) 20, a housing 30, and a control unit 100. The mounting table (load port) 20 is provided in the front part of the housing 30. The housing 30 includes a loading area (work area) 40 and a heat treatment furnace 60.

[0014] The loading area 40 is provided at a lower part within the housing 30. The heat treatment furnace 60 is provided above the loading area 40 within the housing 30. In addition, a base plate 31 is provided between the loading area 40 and the heat treatment furnace 60.

[0015] The mounting table (load port) 20 is used to load and unload the wafer W into and from the housing 30. Storage containers 21 and 22 are placed on the mounting table (load port) 20. The storage containers 21 and 22 are sealed storage containers (FOUPs) that have a detachable lid (not shown) on the front and can store a plurality of wafers W (e.g., about 25 wafers) at predetermined intervals.

[0016] In addition, an alignment device (aligner) 23 may be provided below the mounting table 20 to align in one direction a cutout portion (eg, a notch) provided on the outer periphery of the wafer W transferred by a transfer mechanism 47 described later.

[0017] The loading area (work area) 40 is for transferring wafers W between the storage containers 21 and 22 and a boat 44 described below, loading the boat 44 into the processing container 65, and unloading the boat 44 from the processing container 65. In the loading area 40, a door mechanism 41, a shutter mechanism 42, a lid 43, the boat 44, a base 45a, a base 45b, a lifting mechanism 46, and a transfer mechanism 47 are provided.

[0018] The door mechanism 41 is for removing the lids of the storage containers 21 and 22 to open the interiors of the storage containers 21 and 22 to the loading area 40. The shutter mechanism 42 is provided above the loading area 40. The shutter mechanism 42 is provided to cover (or block) the furnace port 68a to suppress or prevent high-temperature heat from inside the furnace from being released into the loading area 40 through the furnace port 68a, which will be described later, when the lid body 43 is open.

[0019] The lid body 43 has an insulating cylinder 48 and a rotating mechanism 49. The insulating cylinder 48 is provided on the lid body 43. The insulating cylinder 48 is provided to prevent the boat 44 from being cooled by heat transfer to the lid body 43 side and to keep the boat 44 warm. The rotating mechanism 49 is attached to the lower part of the lid body 43. The rotating mechanism 49 is provided to rotate the boat 44. The rotating shaft of the rotating mechanism 49 passes through the lid body 43 airtightly and is provided to rotate a rotating table (not shown) arranged on the lid body 43.

[0020] The lifting mechanism 46 drives the lid body 43 to move up and down when the boat 44 is loaded into and unloaded from the loading area 40 into the processing vessel 65. When the lid body 43 lifted by the lifting mechanism 46 is loaded into the processing vessel 65, the lid body 43 is configured to abut against a furnace port 68a (described later) to seal the furnace port 68a. The boat 44 placed on the lid body 43 can hold the wafer W in the processing vessel 65 so as to be rotatable within a horizontal plane.

[0021] The heat treatment apparatus 10 may have a plurality of boats 44. In this embodiment, an example having two boats 44 will be described with reference to FIG.

[0022] The loading area 40 is provided with boats 44a and 44b. The loading area 40 is provided with a base 45a, a base 45b, and a boat transfer mechanism 45c. The bases 45a and 45b are mounting tables onto which the boats 44a and 44b are transferred, respectively, from the lid body 43. The boat transfer mechanism 45c is used to transfer the boat 44a or 44b from the lid body 43 to the base 45a or 45b.

[0023] The boats 44a and 44b are made of, for example, quartz, and are configured to mount large-diameter wafers W, for example, 300 mm in diameter, in a horizontal state at a predetermined interval (pitch width) in the vertical direction. As shown in, for example, Fig. 3, the boats 44a and 44b are configured by interposing a plurality of (for example, three) support columns 52 between a top plate 50 and a bottom plate 51. The support columns 52 are provided with claw portions 53 for holding the wafers W. The boats 44a and 44b may be provided with auxiliary columns 54 as appropriate in addition to the support columns 52.

[0024] The transfer mechanism 47 is for transferring the wafers W between the storage container 21 or 22 and the boat 44a or 44b. The transfer mechanism 47 has a base 57, a lifting arm 58, and a plurality of forks (transfer plates) 59. The base 57 is provided so as to be capable of ascending and descending and swiveling. The lifting arm 58 is provided so as to be movable in the up and down direction (so as to be liftable) by a ball screw or the like. The base 57 is provided on the lifting arm 58 so as to be capable of horizontally swiveling.

[0025] Fig. 4 is a cross-sectional view showing an outline of the configuration of a heat treatment furnace. The heat treatment furnace 60 in Fig. 4 is an example of a vertical furnace for accommodating a plurality of thin disk-shaped wafers W and subjecting them to a predetermined heat treatment. The heat treatment furnace 60 includes a jacket 62, a heater 63, a space 64, and a treatment container 65.

[0026] The processing vessel 65 is used to store the wafers W held in the boat 44 and perform heat processing. The processing vessel 65 is made of, for example, quartz and has a vertically long shape. The processing vessel 65 is supported on a base plate 66 via a manifold 68 at the bottom. A processing gas is supplied from the manifold 68 to the processing vessel 65 through an injector 71. The injector 71 is connected to a gas supply source 72. The processing gas and purge gas supplied to the processing vessel 65 are exhausted through an exhaust port 73 from an exhaust system 74 equipped with a vacuum pump capable of reducing pressure.

[0027] The lid 43 closes the furnace port 68a at the bottom of the manifold 68 when the boat 44 is loaded into the processing vessel 65. The lid 43 is provided so as to be movable up and down by a lifting mechanism 46. A heat-retaining cylinder 48 is placed on the top of the lid 43. The boat 44, which carries a large number of wafers W at predetermined intervals in the vertical direction, is provided on the top of the heat-retaining cylinder 48.

[0028] The jacket 62 is provided to cover the periphery of the processing vessel 65 and defines a space 64 around the processing vessel 65. The jacket 62 has a cylindrical shape similar to the processing vessel 65. The jacket 62 is supported by a base plate 66. A heat insulating material 62a made of, for example, glass wool may be provided inside the jacket 62 and outside the space 64.

[0029] The heater 63 is provided to cover the periphery of the processing vessel 65 and heats the processing vessel 65 as well as the wafer W held in the boat 44, i.e., the object to be heated in the processing vessel 65. The heater 63 is provided inside the jacket 62 and outside the space 64. The heater 63 is made of a heating resistor such as a carbon wire, and can control the temperature of the gas flowing inside the space 64 as well as heat and control the inside of the processing vessel 65 to a predetermined temperature (e.g., 50 to 1200° C.). The heater 63 functions as a heating unit that heats the processing vessel 65 and the wafer W.

[0030] The space 64 and the space in the processing vessel 65 are divided into a plurality of unit areas, for example, 10 unit areas A1, A2, A3, A4, A5, A6, A7, A8, A9, and A10, along the vertical direction. The heater 63 is divided into 63-1, 63-2, 63-3, 63-4, 63-5, 63-6, 63-7, 63-8, 63-9, and 63-10 in one-to-one correspondence with the unit areas along the vertical direction. Each of the heaters 63-1 to 63-10 is configured so that the output can be independently controlled corresponding to each of the unit areas A1 to A10 by a heater output unit 86 made of, for example, a thyristor. The heaters 63-1 to 63-10 are an example of a heating element.

[0031] 4 shows an example in which space 64 and the space within processing vessel 65 are divided into 10 unit areas along the vertical direction. The number of unit areas is not limited to 10, and space 64 and the space within processing vessel 65 may be divided into a number other than 10. Although space 64 and the space within processing vessel 65 are divided equally in FIG. 4, this is not limiting, and the vicinity of furnace port 68a where the temperature change is large may be divided into smaller areas. Heaters 63 may be provided at different positions along the vertical direction, and may not be provided in one-to-one correspondence with each of unit areas A1 to A10.

[0032] Heater temperature sensors Ao1-Ao10 are provided in space 64 to measure temperatures corresponding to unit areas A1-A10, respectively. Furthermore, in-processing vessel temperature sensors Ai1-Ai10 are provided in the space within processing vessel 65 to measure temperatures corresponding to unit areas A1-A10, respectively. The heater temperature sensors Ao1-Ao10 and the in-processing vessel temperature sensors Ai1-Ai10 measure temperatures to measure temperature distribution along the vertical direction. The in-processing vessel temperature sensors Ai1-Ai10 are an example of a first temperature measurement unit that measures the temperature distribution in the wafer arrangement direction using a plurality of temperature measurement elements provided in advance in heat treatment apparatus 10.

[0033] Measurement signals from the heater temperature sensors Ao1 to Ao10 are input to the control unit 100 via line 81. Measurement signals from the processing vessel internal temperature sensors Ai1 to Ai10 are input to the control unit 100 via line 82. In response to the measurement signals, the control unit 100 calculates setting values ​​for controlling the heat generation amounts of the heaters 63-1 to 63-10 based on a target temperature described below, and outputs the calculated setting values ​​to a heater output unit 86.

[0034] The heater output unit 86 outputs the input setting value to each of the heaters 63-1 to 63-10 via a heater output line 87 and a heater terminal 88. For example, by calculating the setting value of the heater output unit 86 by PID control, the control unit 100 controls the output of the heater output unit 86 to each of the heaters 63-1 to 63-10, i.e., the amount of heat generated by each of the heaters 63-1 to 63-10.

[0035] 4, the heat treatment apparatus 10 may be provided with movable temperature sensors Ap1-Ap10 that are loaded and unloaded together with the wafer W. Measurement signals from the movable temperature sensors Ap1-Ap10 are input to the control unit 100 via a line 83.

[0036] The heat treatment apparatus 10 according to this embodiment uses a plurality of removable and post-installed temperature sensors that can be installed in the space inside the processing vessel 65 as a post-installation. The post-installed temperature sensors measure temperature to measure the temperature distribution along the vertical direction, similar to the processing vessel temperature sensors Ai1-Ai10. The post-installed temperature sensors are an example of a second temperature measurement unit that measures the temperature distribution in the wafer arrangement direction by using a plurality of temperature measurement elements that are post-installed in the heat treatment apparatus 10. Measurement signals from the post-installed temperature sensors are input to the control unit 100 via a line.

[0037] The heater temperature sensor Ao, the processing vessel temperature sensor Ai, the movable temperature sensor Ap, and the post-installation temperature sensor may be provided at positions that allow measurement of the temperature distribution along the vertical direction in the processing vessel 65. For example, the heater temperature sensor Ao, the processing vessel temperature sensor Ai, the movable temperature sensor Ap, and the post-installation temperature sensor do not have to be provided in one-to-one correspondence with each of the unit areas A1 to A10.

[0038] The heat treatment furnace 60 may also include a cooling mechanism 90 for cooling the treatment vessel 65. The cooling mechanism 90 may include, for example, a blower 91, an air blower pipe 92, and an exhaust pipe 94.

[0039] The blower 91 is for blowing a cooling gas, for example, air, into the space 64 in which the heater 63 is provided, to cool the processing vessel 65. The blower pipe 92 is for sending the cooling gas from the blower 91 to the heater 63. The blower pipe 92 is connected to each of the ejection holes 92a-1 to 92a-10, and supplies the cooling gas to the space 64.

[0040] The exhaust pipe 94 is for discharging air from the space 64. The space 64 is provided with an exhaust port 94a for discharging the cooling gas from the space 64. One end of the exhaust pipe 94 is connected to the exhaust port 94a.

[0041] 4, the heat treatment furnace 60 may be provided with a heat exchanger 95 in the middle of an exhaust pipe 94, and the other end of the exhaust pipe 94 may be connected to the suction side of a blower 91. The cooling gas exhausted by the exhaust pipe 94 may be returned to the blower 91 after heat exchange in the heat exchanger 95, without being discharged to the factory exhaust system, and may be circulated for use. In this case, the cooling gas may be circulated through an air filter (not shown). Alternatively, the cooling gas exhausted from the space 64 may be discharged from the exhaust pipe 94 through the heat exchanger 95 to the factory exhaust system.

[0042] The blower 91 may be configured so that the amount of airflow of the blower 91 can be controlled by controlling the power supplied from a power supply unit 91a made of, for example, an inverter, in response to an output signal from the control unit 100.

[0043] The control unit 100 is realized by, for example, a computer 500 described later. The control unit 100 reads a program recorded in a storage device, and sends control signals to each component of the heat treatment apparatus 10 according to the program to execute heat treatment. The control unit 100 controls the temperature inside the treatment vessel 65 by controlling the power supplied to the heater 63 based on measurement signals (signals indicating measured temperatures) measured by the heater temperature sensor Ao, the treatment vessel internal temperature sensor Ai, the movable temperature sensor Ap, and the retrofit temperature sensor.

[0044] In the following, the temperature distribution along the height direction in the processing vessel 65 may be referred to as the temperature profile. In the heat treatment apparatus 10 shown in Figures 1 to 4, even if the same power is supplied to the heater 63, differences in temperature profile occur due to the existence of machine differences, which are individual differences between apparatuses, as shown in Figure 5, for example. Figure 5 is a diagram showing an example of differences in temperature profile due to machine differences.

[0045] Therefore, in order to stabilize the results of heat treatment, the control unit 100 of the heat treatment apparatus 10 needs to correct the machine difference of the heat treatment apparatus 10 and improve the uniformity of the temperature profile. For example, an operator takes the following measures to correct the machine difference of the heat treatment apparatus 10 and achieve a uniformity of the temperature profile.

[0046] FIG. 6 is a flowchart of an example of a processing procedure for correcting differences between heat treatment apparatuses to achieve uniformity in the temperature profile.

[0047] In step S10, an operator sets a retrofit temperature sensor in the processing vessel 65 in order to correct an instrument error of the heat treatment apparatus 10. In step S12, an operator performs heat treatment on a wafer W in the processing vessel 65 controlled at a target temperature, and measures a temperature profile during the heat treatment by at least the temperature sensor Ai in the processing vessel and the retrofit temperature sensor.

[0048] 7 is an explanatory diagram showing a schematic diagram of the positional relationship among the heater, the processing vessel temperature sensor, the post-attached temperature sensor, and the wafer. In FIG. 7, the heater 63 and the wafer W in the heat treatment apparatus 10 are shown, and the post-attached temperature sensor Aaf is provided at a position closer to the wafer W than the processing vessel temperature sensor Ai. In FIG. 7, the processing vessel temperature sensor Ai and the post-attached temperature sensor Aaf are aligned in the height direction (wafer arrangement direction). From the positional relationship between the post-attached temperature sensor Aaf and the processing vessel temperature sensor Ai shown in FIG. 7, the temperature measured by the post-attached temperature sensor Aaf is closer to the temperature of the wafer W than the temperature measured by the processing vessel temperature sensor Ai.

[0049] 8 is an explanatory diagram showing the temperature difference between the temperature measured by the post-attached temperature sensor Aaf and the temperature measured by the processing vessel internal temperature sensor Ai. For example, when the target temperature for the heat treatment of the wafer W is "500°C", if the heat treatment is performed by controlling the temperature measured by the processing vessel internal temperature sensor Ai to be "500°C", a temperature difference occurs between the target temperature "500°C" and the temperature measured by the post-attached temperature sensor Aaf as shown in FIG. 8(A).

[0050] Since the measured temperature measured by the post-installed temperature sensor Aaf is closer to the temperature of the wafer W than the measured temperature measured by the temperature sensor Ai inside the processing vessel, the measured temperature of the post-installed temperature sensor Aaf should be controlled to become the target temperature "500°C."

[0051] However, the retrofit temperature sensor Aaf is attached later when correcting machine differences in the heat treatment apparatus 10, and is removed before the actual process of heat treating the product wafers.

[0052] Therefore, in step S14, the operator calculates a correction value for the target temperature "500°C" used to control the heating section from the temperature difference (temperature deviation) between the measured temperature measured by the retrofit temperature sensor Aaf, which is located at a corresponding position in the height direction as shown in Figure 8 (A), and the measured temperature measured by the temperature sensor Ai inside the processing vessel.

[0053] For example, the corrected target temperature used to control the heating unit is a temperature obtained by offsetting the temperature deviation amount shown in Fig. 8(A) from the target temperature "500°C". By controlling the measured temperature of the temperature sensor Ai inside the processing vessel to be the corrected target temperature, the measured temperature measured by the retrofit temperature sensor Aaf approaches the target temperature "500°C" as shown in Fig. 8(B).

[0054] 6, the worker sets a temperature sensor movable in the wafer arrangement direction to utilize the technology of Patent Document 1. The worker performs heat processing on the wafer W in the processing vessel 65 controlled at the corrected target temperature, and measures the temperature profile including the temperature between the retrofit temperature sensors Aaf by continuously measuring the temperature distribution while moving the temperature sensor movable in the wafer arrangement direction.

[0055] In step S18, the operator judges whether the result of the uniform heating length measurement is OK or not based on the temperature profile measured in step S16. If the result of the uniform heating length measurement is not OK, in step S20, the operator repeats the processes of steps S16 to S20 while modifying the corrected target temperature.

[0056] If the result of the uniform heating length measurement is OK, the process proceeds to step S22, where the operator places a monitor wafer W. The operator performs heat processing on the wafer W in the processing vessel 65 controlled at the corrected target temperature. In step S24, the operator determines whether the result of film formation on the monitor wafer W is OK.

[0057] If the result of film formation on the monitor wafer W is not OK, the operator repeats the processes of steps S22 to S26 while modifying the corrected target temperature in step S26. If the result of film formation on the monitor wafer W is OK, the process proceeds to step S28, where the operator removes the retrofit temperature sensor set in step S10.

[0058] The processes in steps S16 to S26 are performed to increase the number of positions at which the temperature can be measured by the retrofit temperature sensor Aaf, and thereby improve the accuracy of the corrected target temperature by increasing the number of positions and evaluation items at which the temperature is measured.

[0059] 6, however, requires man-hours for measuring the temperature of the wafer W during the heat treatment in the processing vessel 65 and for forming a film on the monitor wafer W. In addition, in the processing of the flowchart shown in FIG 6, the processing of steps S20 and S26 is performed based on the judgment and experience of an operator, and the target temperature is not appropriately adjusted in some cases.

[0060] Therefore, the heat treatment device 10 of this embodiment utilizes digital twin technology as described below to predict the temperature at a position away from the retrofit temperature sensor Aaf (for example, between multiple retrofit temperature sensors Aaf), and corrects the target temperature used to control the heating section to absorb mechanical differences in the heat treatment device 10, thereby achieving a uniform temperature profile.

[0061] By utilizing digital twin technology, the control unit 100 of the heat treatment device 10 modifies a standard simulation model, which is an average simulation model of the heat treatment device 10, into an individual simulation model that reflects the mechanical differences of each heat treatment device 10.

[0062] Fig. 9 is a diagram of an example explaining the use of a digital twin of a heat treatment apparatus according to this embodiment. Fig. 9(A) shows a retrofit temperature sensor Aaf set in the actual heat treatment apparatus 10. Fig. 9(B) shows a standard simulation model of the heat treatment apparatus 10 shown in Fig. 9(A).

[0063] The standard simulation model of the heat treatment apparatus 10 can predict the temperature at any position during heat treatment, not just the position of the retrofit temperature sensor Aaf of the heat treatment apparatus 10, by performing a simulation according to the same process parameters as those of the heat treatment apparatus 10 of FIG. 9(A) during heat treatment.

[0064] In addition, the standard simulation model of the heat treatment apparatus 10 shown in Fig. 9(B) models the relationship of heat exchange, specific heat, etc. However, due to the existence of machine differences in the heat treatment apparatus 10 and factors that cannot be modeled, a temperature difference occurs between the temperature measured by the post-attachment temperature sensor Aaf set in the actual heat treatment apparatus 10 and the temperature at the position of the post-attachment temperature sensor Aaf predicted by the standard simulation model of the heat treatment apparatus 10, for example, as shown in Fig. 9(C).

[0065] Therefore, in this embodiment, as shown in Fig. 10, the standard simulation model of the heat treatment apparatus 10 is modified to an individual simulation model that reflects the machine difference of each heat treatment apparatus 10. Fig. 10 is a diagram of an example explaining the use of the digital twin of the heat treatment apparatus according to this embodiment.

[0066] 10A shows a standard simulation model of a heat treatment apparatus 10. From the actual heat treatment apparatus 10 performing heat treatment, the measured temperature of the post-attached temperature sensor Aaf set in the heat treatment apparatus 10 can be obtained. In addition, by performing a simulation according to the same process parameters as the actual heat treatment apparatus 10 performing heat treatment, the standard simulation model of the heat treatment apparatus 10 can predict the temperature at the position of the post-attached temperature sensor Aaf.

[0067] Fig. 10(B) shows information on the temperature difference between the measured temperature of the post-installation temperature sensor Aaf set in the actual heat treatment device 10 and the temperature at the position of the post-installation temperature sensor Aaf predicted by a standard simulation model of the heat treatment device 10. The temperature difference information in Fig. 10(B) can be obtained for the number of post-installation temperature sensors Aaf.

[0068] By modifying the heat exchange relationships and specific heat within the standard simulation model of the heat treatment device 10 so as to reduce the temperature difference in Figure 10(B), it is possible to modify the simulation model to an individual heat treatment device 10 having a smaller temperature difference from the actual device, as shown in, for example, Figure 10(C).

[0069] Fig. 11 is a diagram of an example explaining the use of a digital twin of a heat treatment apparatus according to this embodiment. Fig. 11(A) shows a retrofit temperature sensor Aaf set in the actual heat treatment apparatus 10. Fig. 11(B) shows a simulation model of an individual heat treatment apparatus 10 modified from the standard simulation model of the heat treatment apparatus 10.

[0070] In this embodiment, by using the simulation model of the individual heat treatment apparatus 10 shown in FIG. 11(B), it becomes possible to accurately predict the temperature at a position where the retrofit temperature sensor Aaf is not set.

[0071] In this manner, in this embodiment, by utilizing a simulation model of an individual heat treatment apparatus 10, it is possible to realize a so-called digital twin in which changes in real (physical) space, that is, the temperature profile of the heat treatment apparatus 10 during heat treatment, are reproduced in a virtual (cyber) space in a linked manner. In the digital twin, the state of the temperature profile of the heat treatment apparatus 10 can be reproduced in the virtual space while the heat treatment is being performed by the heat treatment apparatus 10.

[0072] Therefore, the heat treatment apparatus 10 according to this embodiment executes a simulation using an individual simulation model that reflects the machine difference of each heat treatment apparatus 10, predicts temperatures other than the position of the retrofit temperature sensor Aaf, and corrects the target temperature used to control the heating unit. This allows the heat treatment apparatus 10 according to this embodiment to improve the uniformity of the temperature profile.

[0073] FIG. 12 is an explanatory diagram showing the temperature deviation between the measured temperature of the post-installation temperature sensor Aaf, the predicted temperature at a position where the post-installation temperature sensor Aaf is not present, predicted by the individual simulation model, and the measured temperature of the temperature sensor Ai in the processing vessel.

[0074] For example, if the target temperature for heat treatment of a wafer W is "500°C," when heat treatment is performed by controlling the measured temperature of the temperature sensor Ai inside the processing vessel to be "500°C," a temperature deviation occurs between the measured temperature of the post-installed temperature sensor Aaf and the target temperature "500°C," as shown in Figure 12(A).

[0075] However, unlike Fig. 8A, Fig. 12A calculates a predicted temperature at a position where there is no rear-mounted temperature sensor Aaf. In this embodiment, the temperature difference (temperature deviation) between the measured temperature measured by the rear-mounted temperature sensor Aaf at the corresponding position in the height direction as shown in Fig. 12B, the predicted temperature at a position where there is no rear-mounted temperature sensor Aaf predicted by the individual simulation model, and the measured temperature measured by the temperature sensor Ai in the processing vessel is averaged to calculate a correction value for the target temperature "500°C" used to control the heating unit.

[0076] In the example of Figure 12, the predicted temperature at a position where there is no retrofit temperature sensor Aaf, predicted by an individual simulation model, is also used, so that there is no large temperature deviation from the target temperature at a position where there is no retrofit temperature sensor Aaf, and a temperature profile 1000 with improved accuracy compared to the conventional temperature profile 1100 can be realized.

[0077] The control unit 100 of the heat treatment apparatus 10 is realized, for example, by a functional configuration shown in Fig. 13. Fig. 13 is a functional configuration diagram of an example of the control unit of the heat treatment apparatus according to this embodiment.

[0078] The control unit 100 of the heat treatment apparatus 10 according to this embodiment is realized by, for example, the functional block shown in Fig. 13. Fig. 13 is a functional block diagram of an example of the control unit of the heat treatment apparatus according to this embodiment. Note that the functional block diagram of Fig. 13 omits illustration of configurations that are not necessary for the description of this embodiment.

[0079] The control unit 100 in FIG. 13 executes a program to implement a process parameter acquisition unit 102, a simulation execution unit 104, a temperature sensor data acquisition unit 106, a simulation result determination unit 108, a database 110, and a process control unit 112.

[0080] The simulation result determination unit 108 includes a temperature profile comparison unit 120, a model correction unit 122, and a correction unit 124. The process control unit 112 includes a heating control unit .

[0081] The process parameter acquisition unit 102 acquires process parameters of a process executed in the heat treatment device 10. The process parameter acquisition unit 102 provides the acquired process parameters to the simulation execution unit 104 and the process control unit 112.

[0082] The simulation execution unit 104 reads out a standard or individual simulation model of the heat treatment device 10 from the database 110, and executes a simulation according to the process parameters provided by the process parameter acquisition unit 102, thereby calculating a process state of the heat treatment device 10 during the process. The process state of the heat treatment device 10 calculated by the simulation execution unit 104 includes not only the predicted temperature at the position of the post-attached temperature sensor Aaf of the heat treatment device 10 during the heat treatment described above, but also the predicted temperature at a position without the post-attached temperature sensor Aaf. The simulation execution unit 104 provides the predicted temperature predicted by the standard or individual simulation model to the simulation result determination unit 108.

[0083] The temperature sensor data acquiring unit 106 acquires measurement signals (signals indicating measured temperatures) measured by the heater temperature sensor Ao, the processing vessel internal temperature sensor Ai, the movable temperature sensor Ap, and the retrofit temperature sensor as examples of the temperature sensor data. The temperature sensor data acquiring unit 106 also provides the acquired temperature sensor data to the simulation result determining unit 108 and the process control unit 112.

[0084] The simulation result judgment unit 108 judges the simulation result using the measured temperatures measured by the temperature sensor Ai in the processing vessel and the retrofit temperature sensor Aaf acquired by the temperature sensor data acquisition unit 106, and the predicted temperatures predicted by a standard or individual simulation model.

[0085] The temperature profile comparison unit 120 of the simulation result judgment unit 108 compares the measured temperature of the retrofit temperature sensor Aaf obtained from the actual heat treatment device 10 performing heat treatment with the predicted temperature at the position of the retrofit temperature sensor Aaf predicted by a standard simulation model according to the same process parameters as the actual heat treatment device 10.

[0086] The model correction unit 122 obtains information on the temperature difference between the measured temperature and the predicted temperature at the position of the retrofit temperature sensor Aaf from the comparison result by the temperature profile comparison unit 120. The model correction unit 122 corrects the heat exchange relationship and specific heat within the standard simulation model so as to reduce the temperature difference between the measured temperature and the predicted temperature at the position of the retrofit temperature sensor Aaf, thereby correcting the model to an individual simulation model with less temperature difference from the actual machine.

[0087] In addition, the correction unit 124 corrects the target temperature used to control the heating unit, using the measured temperatures measured by the temperature sensor Ai inside the processing vessel and the retrofit temperature sensor Aaf of the actual heat treatment device 10 during heat treatment, and the predicted temperature at a position where the retrofit temperature sensor Aaf is not present, predicted by an individual simulation model according to the same process parameters as the actual heat treatment device 10.

[0088] For example, the correction unit 124 averages the temperature difference (temperature deviation) between the measured temperature measured by the post-installed temperature sensor Aaf at a corresponding position in the height direction, and the predicted temperature at a position where the post-installed temperature sensor Aaf is not present, predicted by an individual simulation model, and the measured temperature measured by the temperature sensor Ai inside the processing vessel, and calculates a correction value for the target temperature used to control the heating unit.

[0089] The database 110 stores data used by the simulation execution unit 104 for simulation, such as a standard simulation model of the heat treatment device 10, an individual simulation model modified to reflect machine differences of the heat treatment device 10, and a corrected target temperature used to control the heating section.

[0090] The process control unit 112 executes a process in the heat treatment device 10 according to the process parameters provided by the process parameter acquisition unit 102. The heating control unit 130 controls the heating unit at the target temperature corrected by the correction unit 124, thereby improving the uniformity of the temperature profile.

[0091] FIG. 14 is a flowchart showing an example of a processing procedure for correcting the machine difference of the heat treatment apparatus according to the present embodiment and achieving uniformity in the temperature profile.

[0092] In step S50, an operator sets a retrofit temperature sensor in the processing vessel 65 to correct an instrument error of the heat treatment apparatus 10. In step S52, the operator performs heat treatment on the wafer W in the processing vessel 65 controlled at a target temperature. The processing vessel temperature sensor Ai and the retrofit temperature sensor Aaf of the heat treatment apparatus 10 measure a temperature profile during the heat treatment. The temperature sensor data acquisition unit 106 of the control unit 100 acquires the temperatures measured by the processing vessel temperature sensor Ai and the retrofit temperature sensor Aaf.

[0093] In step S54, the simulation execution unit 104 executes a simulation using a standard simulation model in accordance with the same process parameters as those of the actual heat treatment apparatus 10.

[0094] The temperature profile comparison unit 120 compares the measured temperature of the post-installation temperature sensor Aaf obtained from the actual heat treatment device 10 with the predicted temperature at the position of the post-installation temperature sensor Aaf predicted by a standard simulation model according to the same process parameters. The model correction unit 122 obtains information on the temperature difference from the comparison result and recognizes the machine difference from the information on the temperature difference.

[0095] In step S56, the model correction unit 122 corrects the standard simulation model to reduce the temperature difference between the measured temperature at the position of the retrofit temperature sensor Aaf and the predicted temperature, thereby correcting the standard simulation model to an individual simulation model with less temperature difference from the actual equipment.

[0096] In step S58, the simulation execution unit 104 executes a simulation using an individual simulation model according to the same process parameters as those of the heat treatment apparatus 10, which is the actual apparatus.

[0097] The processing vessel internal temperature sensor Ai and the post-attached temperature sensor Aaf of the heat treatment apparatus 10 measure a temperature profile during heat treatment. The temperature sensor data acquisition unit 106 of the control unit 100 acquires the temperatures measured by the processing vessel internal temperature sensor Ai and the post-attached temperature sensor Aaf.

[0098] In step S60, the correction unit 124 corrects the target temperature used to control the heating unit, using the measured temperatures measured by the temperature sensor Ai in the processing vessel and the retrofit temperature sensor Aaf of the actual heat treatment device 10, and the predicted temperature at a position without the retrofit temperature sensor Aaf predicted by an individual simulation model according to the same process parameters as the actual heat treatment device 10. In step S62, the operator removes the retrofit temperature sensor that was set in step S50.

[0099] 14, the temperature at many positions where the retrofit temperature sensor Aaf is not installed can be predicted by an individual simulation model that takes into account machine differences, without increasing the number of positions where the temperature can be measured by the retrofit temperature sensor Aaf. In this way, in this embodiment, the predicted temperatures at many positions predicted by the individual simulation model can be used to correct the target temperature, improving the uniformity of the temperature profile.

[0100] Furthermore, in this embodiment, the processing steps shown in steps S16 to S26 in the flowchart of FIG. 6 are unnecessary, and materials required for start-up of the heat treatment apparatus 10 and the man-hours required for work using these materials can be reduced.

[0101] Furthermore, in this embodiment, since fewer materials and labor are required, it is also possible to promote use at times other than the start-up of the heat treatment apparatus 10. For example, when it is suspected that the performance of the heat treatment apparatus 10 has changed due to aging, the correction value of the target temperature can be easily recalculated by performing the process of this embodiment.

[0102] Furthermore, in the process of the flowchart of FIG. 14, after calculating the corrected target temperature in step S60, the process returns to step S52, and the wafer W is heat-treated in the processing vessel 65 controlled at the corrected target temperature. The processes of steps S52 to S60 may be repeated to further improve accuracy.

[0103] In the present embodiment, the post-installation temperature sensor Aaf is used to grasp the mechanical difference of the heat treatment apparatus 10, but other methods for grasping the mechanical difference may be used. If other methods for grasping the mechanical difference can be used, the operator can save the trouble of setting the post-installation temperature sensor Aaf in the processing vessel 65 for the process of correcting the mechanical difference of the heat treatment apparatus 10.

[0104] [Second embodiment] In the above-described first embodiment, the control unit 100 of the heat treatment apparatus 10 corrects the machine difference of the heat treatment apparatus 10 and executes the process of improving the uniformity of the temperature profile in order to stabilize the result of the heat treatment. In the second embodiment, the process of correcting the machine difference of the heat treatment apparatus 10 and improving the uniformity of the temperature profile is executed by another information processing apparatus connected to the control unit 100 of the heat treatment apparatus 10 so as to be capable of data communication.

[0105] 15 is a configuration diagram of an example of an information processing system according to this embodiment. The information processing system in Fig. 15 includes a heat treatment apparatus 10, an autonomous controller 210, an apparatus controller 220, a host computer 230, an external measuring device 240, and an analysis server 250.

[0106] The heat treatment apparatus 10, the autonomous controller 210, the apparatus controller 220, the host computer 230, the external measuring device 240, and the analysis server 250 are communicatively connected via a network such as a LAN (Local Area Network).

[0107] The heat treatment apparatus 10 executes a process according to a control command (process parameter) output from the apparatus controller 220. The autonomous controller 210 is a controller for autonomously controlling the heat treatment apparatus 10, and performs simulation of the process state being executed in the heat treatment apparatus 10 using a standard or individual simulation model. An autonomous controller 210 is provided for each heat treatment apparatus 10. The autonomous controller 210 executes the process of correcting the machine difference of the heat treatment apparatus 10 and improving the uniformity of the temperature profile, which was performed by the control unit 100 in the first embodiment. This reduces the processing load of the control unit 100 of the heat treatment apparatus 10.

[0108] Moreover, the equipment controller 220 is a controller having a computer configuration for controlling the heat treatment apparatus 10. The equipment controller 220 outputs process parameters for controlling control parts of the heat treatment apparatus 10 to the heat treatment apparatus 10. The host computer 230 is an example of a man-machine interface (MMI) that receives instructions for the heat treatment apparatus 10 from an operator and provides information related to the heat treatment apparatus 10 to the operator.

[0109] The external measuring instrument 240 is a measuring instrument that measures the result after the execution of a process according to process parameters, such as a film thickness measuring instrument, a sheet resistance measuring instrument, a particle measuring instrument, etc. For example, the external measuring instrument 240 measures the adhesion of a film on a wafer such as a monitor wafer.

[0110] The analysis server 250 performs, for example, data analysis required for processing executed by the autonomous controller 210. For example, the analysis server 250 may edit a standard simulation model of the heat treatment device 10 using data collected from a plurality of heat treatment devices 10. For example, the base of the standard simulation model of the heat treatment device 10 may be a greatest common denominator model based on the plurality of heat treatment devices 10.

[0111] It is to be noted that the information processing system in Fig. 15 is only an example, and there are various system configurations depending on the application and purpose. The division of the devices such as the heat treatment device 10, the autonomous controller 210, the device controller 220, the host computer 230, the external measuring device 240, and the analysis server 250 in Fig. 15 is only an example.

[0112] For example, the information processing system can have various configurations, such as a configuration in which at least two of the heat treatment device 10, the autonomous control controller 210, the device control controller 220, the host computer 230, the external measuring device 240, and the analysis server 250 are integrated together, or a configuration in which they are further divided.

[0113] The autonomous controller 210, the device controller 220, the host computer 230, and the analysis server 250 of the information processing system shown in Fig. 16 are realized by a computer having a hardware configuration as shown in Fig. 2. The control unit 100 of the heat treatment device 10 described above is also realized by a computer having a hardware configuration as shown in Fig. 2. Fig. 16 is a hardware configuration diagram of an example of a computer.

[0114] 16 includes an input device 501, an output device 502, an external I / F (interface) 503, a RAM (Random Access Memory) 504, a ROM (Read Only Memory) 505, a CPU (Central Processing Unit) 506, a communication I / F 507, and a HDD (Hard Disk Drive) 508, all of which are connected to each other via a bus B. The input device 501 and the output device 502 may be connected and used when necessary.

[0115] The input device 501 is a keyboard, mouse, touch panel, etc., and is used by an operator to input various operation signals. The output device 502 is a display, etc., and displays the results of processing by the computer 500. The communication I / F 507 is an interface that connects the computer 500 to a network. The HDD 508 is an example of a non-volatile storage device that stores programs and data.

[0116] The external I / F 503 is an interface with an external device. The computer 500 can read and / or write data from and to a recording medium 503a such as a Secure Digital (SD) memory card via the external I / F 503. The ROM 505 is an example of a non-volatile semiconductor memory (storage device) in which programs and data are stored. The RAM 504 is an example of a volatile semiconductor memory (storage device) that temporarily holds programs and data.

[0117] The CPU 506 is a calculation device that reads out programs and data from storage devices such as the ROM 505 and HDD 508 onto the RAM 504 and executes processes, thereby realizing overall control and functions of the computer 500 .

[0118] The autonomous controller 210, the device controller 220, the host computer 230, and the analysis server 250 of the information processing system shown in Fig. 16 can realize various functions by the hardware configuration of the computer 500 in Fig. 16. The control unit 100 of the heat treatment device 10 described above can also realize various functions by the hardware configuration of the computer 500 in Fig. 16.

[0119] According to this embodiment, by using an individual simulation model that takes into account the machine differences of the heat treatment apparatus 10, the uniformity of the temperature distribution in the processing vessel 65 during the heat treatment of the wafer can be improved.

[0120] Although the preferred embodiments of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the present invention. [Explanation of symbols]

[0121] 10 Heat treatment device 44 Boat 63, 63-1 to 63-10 Heater 65 Processing vessel 100 Control section 102 Process parameter acquisition unit 104 Simulation Execution Department 106 Temperature sensor data acquisition unit 108 Simulation result judgment unit 110 Database 112 Process Control Unit 120 Temperature profile comparison section 122 Model Modification Section 124 Correction section 130 Heating control section 210 Autonomous Controller 220 Equipment Controller 230 Host Computer 240 External Measuring Instrument 250 Analysis Server 500 Computers Ai1~Ai10 Temperature sensor inside processing vessel Aaf Retrofit Temperature Sensor W wafer

Claims

1. 1. An information processing system including: a heat treatment apparatus having a heating unit for heating a substrate to be processed and for heat-treating the substrate to be processed in a processing vessel; and an information processing apparatus for outputting a target temperature used for controlling the heating unit, a temperature measuring unit in the processing vessel for measuring a temperature distribution in an arrangement direction of the substrates to be processed at a position between the heating unit and the substrates to be processed in the processing vessel; a post-installed temperature measuring unit for measuring a temperature distribution in an arrangement direction of the substrates to be processed at a position between the heating unit and the substrates to be processed in the processing chamber; a simulation execution unit that executes a simulation of the temperature distribution during the heat treatment of the substrate in the processing vessel by using a standard simulation model of the heat treatment apparatus or an individual simulation model that reflects an individual difference between the heat treatment apparatuses; a model correction unit that corrects the standard simulation model to the individual simulation model based on a difference between the temperature distribution measured by the processing vessel internal temperature measurement unit and the post-installation temperature measurement unit during the heat treatment of the substrate to be processed in the processing vessel and the temperature distribution that is a result of the simulation using the standard simulation model; a correction unit that corrects the target temperature of the temperature measured by the temperature measuring unit in the processing vessel by using the temperature distribution that is a result of the simulation using the simulation model of the individual; and having Each of the standard simulation model and the individual simulation model models heat exchanged in the heat treatment device. An information processing system comprising:

2. The temperature measurement unit in the processing vessel measures a temperature distribution in an arrangement direction of the substrates to be processed by a plurality of temperature measurement elements provided in advance in the heat treatment device, the post-installation temperature measurement unit measures a temperature distribution in the substrate arrangement direction by a plurality of temperature measurement elements post-installed in the heat treatment apparatus; The retrofit temperature measuring unit is a temperature measuring unit for measuring the temperature distribution required for correcting the target temperature used for controlling the heating unit and for correcting the temperature distribution required for correcting the standard simulation to the individual simulation model; 2. The information processing system according to claim 1,

3. The model correction unit includes: correcting the standard simulation model to the individual simulation model based on a difference between a measured temperature measured by each of the plurality of temperature measuring elements of the post-attached temperature measuring unit during heat treatment of the substrate to be processed in the processing vessel and a predicted temperature at the position of the plurality of temperature measuring elements of the post-attached temperature measuring unit predicted using the standard simulation model; 3. The information processing system according to claim 2,

4. The correction unit is and correcting the target temperature of the measured temperatures measured by the plurality of temperature measuring elements of the temperature measuring unit in the processing vessel used for controlling the heating unit, based on the measured temperatures measured by the plurality of temperature measuring elements of the temperature measuring unit in the processing vessel during the heat treatment of the substrate to be processed in the processing vessel, the measured temperatures measured by the plurality of temperature measuring elements of the post-attached temperature measuring unit during the heat treatment of the substrate to be processed in the processing vessel, and a predicted temperature at a position between the plurality of temperature measuring elements of the post-attached temperature measuring unit predicted using a simulation model of the individual.

4. The information processing system according to claim 3,

5. The correction unit is correcting the target temperature of the measured temperatures measured by the plurality of temperature measuring elements of the temperature measuring unit in the processing vessel used for controlling the heating unit, based on measured temperatures measured by the plurality of temperature measuring elements of the temperature measuring unit in the processing vessel during heat treatment of the substrate to be processed in the processing vessel and predicted temperatures at the positions of the plurality of temperature measuring elements of the post-attached temperature measuring unit and at positions between the plurality of temperature measuring elements of the post-attached temperature measuring unit, predicted using a simulation model of the individual; 4. The information processing system according to claim 3,

6. The model correction unit includes: repeating a process of correcting the simulation model of the individual based on a difference between the temperature distribution measured by the temperature measuring unit in the processing vessel and the post-installed temperature measuring unit while the substrate to be processed is being heat-treated in the processing vessel and the temperature distribution that is a result of the simulation using the simulation model of the individual, until the difference becomes equal to or less than a predetermined value.

6. The information processing system according to claim 1, wherein:

7. A temperature control method executed by an information processing system having a heat treatment apparatus having a heating unit for heating a substrate to be processed and for heat-treating the substrate to be processed in a processing vessel, and an information processing apparatus for outputting a target temperature used for controlling the heating unit, comprising: a step of measuring a temperature distribution in an arrangement direction of the substrate to be processed at a position between the heating unit and the substrate to be processed in the processing chamber by an in-processing chamber temperature measuring unit and a post-installed temperature measuring unit while the substrate to be processed is being heat-treated in the processing chamber; performing a simulation of the temperature distribution during the heat treatment of the substrate in the processing chamber by using a standard simulation model of the heat treatment apparatus; modifying the standard simulation model into an individual simulation model that reflects an individual difference between the heat treatment apparatuses based on a difference between the temperature distributions measured by the processing vessel internal temperature measurement unit and the post-installation temperature measurement unit and the temperature distributions obtained as a result of the simulation; performing a simulation of the temperature distribution during the heat treatment of the substrate to be processed in the processing chamber by using the individual simulation model; correcting the target temperature measured by the temperature measuring unit in the processing vessel using the temperature distribution obtained by the simulation using the individual simulation model; having Each of the standard simulation model and the individual simulation model models heat exchanged in the heat treatment device. A temperature control method comprising:

8. A heat treatment apparatus for heat-treating a substrate to be treated in a treatment container, comprising: a heating unit for heating the substrate to be processed in the processing chamber; a temperature measuring unit in the processing vessel for measuring a temperature distribution in an arrangement direction of the substrates to be processed at a position between the heating unit and the substrates to be processed in the processing vessel; a post-installed temperature measuring unit for measuring a temperature distribution in an arrangement direction of the substrates to be processed at a position between the heating unit and the substrates to be processed in the processing chamber; a simulation execution unit that executes a simulation of the temperature distribution during the heat treatment of the substrate in the processing vessel by using a standard simulation model of the heat treatment apparatus or an individual simulation model that reflects an individual difference between the heat treatment apparatuses; a model correction unit that corrects the standard simulation model to the individual simulation model based on a difference between the temperature distribution measured by the processing vessel internal temperature measurement unit and the post-installation temperature measurement unit during the heat treatment of the substrate to be processed in the processing vessel and the temperature distribution that is a result of the simulation using the standard simulation model; a correction unit that corrects a target temperature of a temperature measured by the temperature measuring unit in the processing vessel, the target temperature being used for controlling the heating unit, by using the temperature distribution that is a result of the simulation using the simulation model of the individual; having Each of the standard simulation model and the individual simulation model models heat exchanged in the heat treatment device. A heat treatment apparatus comprising:

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