CONTROL PROGRAM, CONTROL METHOD, AND PLASMA PROCESSING APPARATUS

Abstract

To provide a control program, a control method, and a plasma processing apparatus.SOLUTION: Provided is a control program for a plasma processing apparatus that performs plasma processing by supplying source power to a plasma generation source and supplying bias power to a mounting table where a substrate to be processed is mounted. The control program causes a computer to execute processing that includes: observing a peak-to-peak voltage value of the source power or the bias power; fixing a ratio of the source power and the bias power depending on the fluctuation of the peak-to-peak voltage value; and correcting source power supplied to the plasma generation source and bias power supplied to the mounting table such that an observed peak-to-peak voltage value closes to a default value.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present disclosure relates to a control program, a control method, and a plasma processing apparatus. [Background technology]

[0002] A plasma processing apparatus is used for plasma processing of a substrate. In a chamber of the plasma processing apparatus, the substrate is disposed within a region surrounded by an outer peripheral member called an edge ring or a focus ring.

[0003] When plasma processing is performed by a plasma processing apparatus, the outer peripheral member is worn away and its thickness is reduced. As the thickness of the outer peripheral member is reduced, the position of the upper end of the sheath above the outer peripheral member becomes lower. When the position of the upper end of the sheath above the outer peripheral member becomes lower, ions from the plasma collide with the edge of the substrate at an oblique angle. As a result, the opening formed at the edge of the substrate becomes inclined. Patent Document 1 discloses applying a DC voltage to the outer peripheral member to suppress the inclination of the opening formed at the edge of the substrate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2007-258417 A Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a control program, a control method, and a plasma processing apparatus that suppress deterioration of process characteristics due to wear of members arranged in a chamber and individual differences in process characteristics in plasma processing apparatuses. [Means for solving the problem]

[0006] A control program according to one embodiment of the present disclosure is a control program for a plasma processing apparatus that performs plasma processing by supplying source power to a plasma generation source and supplying bias power to a mounting table on which a substrate to be processed is placed, the control program causing a computer to execute a process of observing a peak-to-peak voltage value of the source power or the bias power, fixing a ratio of the source power and the bias power in accordance with fluctuations in the peak-to-peak voltage value, and correcting the source power supplied to the plasma generation source and the bias power supplied to the mounting table so that the observed peak-to-peak voltage value approaches an initial setting value. Effect of the Invention

[0007] According to the present disclosure, it is possible to suppress the deterioration of process characteristics due to wear of members arranged in a chamber and the individual differences in process characteristics among plasma processing apparatuses. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. [Figure 2A] 11A and 11B are diagrams for explaining the variation in tilting due to wear of the edge ring; [Figure 2B] 11A and 11B are diagrams for explaining the variation in tilting due to wear of the edge ring; [Diagram 3] 13 is a graph illustrating a method of correcting FRDC_V. [Figure 4] 13 is a graph illustrating an example of correction of LF_pw. [Diagram 5] 13 is a graph illustrating an example of correction of HF_pw. [Figure 6] 4 is a flowchart illustrating a procedure for executing a correction process in the first embodiment. [Figure 7] FIG. 13 is a diagram illustrating an example of an output of a correction value. [Figure 8] 11 is a flowchart illustrating a procedure for executing a correction process in the second embodiment. [Figure 9]13 is a flowchart illustrating a procedure for executing a correction process in the third embodiment. [Figure 10] 13 is a flowchart illustrating a procedure for executing a correction process in the fourth embodiment. [Figure 11] 13 is a flowchart showing a procedure for performing an overcorrection prevention process. [Figure 12] 10 is a flowchart illustrating a procedure for calibrating a correction coefficient. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] (Embodiment 1) An example of the configuration of a plasma processing system will be described below. Fig. 1 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus.

[0010] The plasma processing system includes a capacitively coupled plasma processing device 1 and a controller 2. The capacitively coupled plasma processing device 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing device 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a shower head 13. The substrate support 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support 11. In one embodiment, the shower head 13 forms at least a part of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically isolated from the housing of the plasma processing chamber 10.

[0011] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0012] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Also, at least one RF / DC electrode coupled to a radio frequency (RF) power source 31 and / or a direct current (DC) power source 32 described later may be disposed in the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as a plurality of lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Thus, the substrate support 11 includes at least one lower electrode.

[0013] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material. The edge ring is also called a focus ring (FR). The ring assembly 112 illustrated in FIG. 1 includes an annular edge ring 112a and an annular cover ring 112b disposed around the edge ring 112a.

[0014] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as a brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0015] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The shower head 13 also includes at least one upper electrode. Note that the gas introduction unit may include, in addition to the shower head 13, one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0016] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include one or more flow modulation devices to modulate or pulse a flow rate of the at least one process gas.

[0017] The power source 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power source 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more processing gases in the plasma processing chamber 10. In addition, a bias potential is generated on the substrate W by supplying a bias RF signal to the at least one lower electrode, and ion components in the formed plasma can be attracted to the substrate W.

[0018] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode. Hereinafter, the peak-to-peak voltage of the source RF signal is also referred to as HF_Vpp, and the source RF power (source power) is also referred to as HF_pw.

[0019] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed. Hereinafter, the peak-to-peak voltage of the bias RF signal is also denoted as LF_Vpp, and the bias RF power (bias power) is also denoted as LF_pw. In addition, the source RF power and the bias RF power are also denoted as RF_pw when there is no need to distinguish between them.

[0020] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0021] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of pulse voltages is applied to at least one lower electrode and / or at least one upper electrode. The pulse voltage may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating a sequence of pulse voltages from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a pulse voltage generator. When the second DC generator 32b and the waveform generator constitute a pulse voltage generator, the pulse voltage generator is connected to at least one upper electrode. The pulse voltage may have a positive polarity or a negative polarity. Also, the sequence of pulse voltages may include one or more positive pulse voltages and one or more negative pulse voltages in one period. The first and second DC generating units 32a, 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.

[0022] The plasma processing system may further include a variable DC power supply 33 coupled to the edge ring 112a. In one embodiment, the variable DC power supply 33 is connected to the edge ring 112a and configured to generate a third DC signal. The generated DC signal is applied to the edge ring 112a. Hereinafter, the voltage of the third DC signal applied to the edge ring 112a is also referred to as FRDC_V.

[0023] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0024] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to execute various steps described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to execute various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is realized, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and is read from the storage unit 2a2 by the processing unit 2a1 and executed. The medium may be various storage media M readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0025] Next, a change in the sheath caused by wear of the edge ring 112a and the occurrence of tilting will be described. Figures 2A and 2B are diagrams for explaining the variation in tilting caused by wear of the edge ring 112a.

[0026] 2A shows a state in which the edge ring 112a is not worn. The edge ring 112a is disposed in the annular region 111b of the substrate support 11 as a part of the ring assembly 112. The thickness of the edge ring 112a is designed so that the height of the upper surface of the edge ring 112a and the height of the upper surface of the wafer W match when the edge ring 112a is disposed in the annular region 111b. When the edge ring 112a is not worn, the sheath on the wafer W generated during plasma processing and the sheath on the edge ring 112a have the same thickness, and no step is generated.

[0027] At this time, the ion irradiation angle with respect to the wafer W and the edge ring 112a is approximately perpendicular to these surfaces. As a result, the shape (etched shape) of the recesses formed in the wafer W is approximately perpendicular in both the central region and the peripheral region of the wafer W, and tilting, in which the shape of the recesses is inclined, does not occur.

[0028] In plasma processing, the edge ring 112a is exposed to plasma and gradually wears away. FIG. 2B shows the edge ring 112a in a worn state. When the edge ring 112a becomes thinner due to wear, the upper surface of the edge ring 112a becomes lower than the upper surface of the wafer W. As a result, a step is generated between the sheath above the edge ring 112a and the sheath above the wafer W, as shown in FIG. 2B.

[0029] As a result of the step occurring in the sheath, the direction of ion irradiation becomes inclined in the peripheral region of the wafer W as shown by the arrow in the figure, and tilting occurs in which the shape of the recess formed in the wafer W becomes inclined.

[0030] The process characteristics of the plasma processing apparatus 1 deteriorate with wear of not only the above-mentioned edge ring 112a but also other members disposed in the plasma processing chamber 10. Here, the members disposed in the plasma processing chamber 10 include the edge ring 112a as well as the cover ring 112b, the substrate support 11, the upper electrode, the inner wall of the plasma processing chamber 10, and the like. Furthermore, there are individual differences (machine differences) in the plasma processing chambers 10, and the plasma characteristics differ among a plurality of plasma processing apparatuses 1.

[0031] In contrast, the plasma processing system according to this embodiment constantly monitors the state of the plasma processing apparatus 1 during execution of plasma processing, and autonomously controls various parameters. As a result, the plasma processing system according to this embodiment suppresses deterioration of process characteristics due to wear of components, and reduces individual differences in process characteristics among a plurality of plasma processing apparatuses 1. The process executed by the control unit 2 of the plasma processing system will be described below.

[0032] (1) FRDC_V correction The control unit 2 corrects FRDC_V according to the RF application time to counter wear of components. Fig. 3 is a graph explaining a method of correcting FRDC_V. The horizontal axis of the graph represents the RF application time, and the vertical axis represents FRDC_V. Here, the RF application time represents the time during which the source RF signal and the bias RF signal are supplied from the first RF generation unit 31a and the second RF generation unit 31b, respectively. FRDC_V is a DC voltage value applied to the edge ring 112a.

[0033] In one embodiment, the control unit 2 increases FRDC_V by a predetermined increase amount every time 50 hours of RF application time has elapsed. The increase amount is, for example, 25 V until 200 hours have elapsed, and 12.5 V after 200 hours have elapsed. When FRDC_V reaches an upper limit value (for example, 300 V), the control unit 2 maintains the upper limit value. The time interval for correcting FRDC_V and the increase amount when correcting FRDC_V are not limited to those described above, and can be designed appropriately.

[0034] (2) LF_pw correction LF_Vpp increases due to the influence of changes over time and fluctuations in FRDC_V. Product characteristics may deteriorate with an increase in LF_Vpp. The control unit 2 corrects LF_pw to match the initial Vpp in order to suppress deterioration of the product characteristics. Here, the initial Vpp is set as the average value of LF_Vpp until a predetermined time (e.g., 50 hours) has elapsed in the seasoning process after replacement of the consumables. The initial Vpp may be calculated by the control unit 2 every time a consumable such as the edge ring 112a is replaced (every time the RF application time is reset to 0). The control unit 2 may use other statistical values ​​such as a median or a moving average as the initial Vpp instead of the average value of LF_Vpp.

[0035] FIG. 4 is a graph for explaining an example of correction of LF_pw. The horizontal axis of the graph indicates RF application time, and the vertical axis indicates LF_pw and LF_Vpp. The RF application time indicates the time elapsed after the seasoning process is completed and the actual plasma process is started. LF_pw and LF_Vpp are expressed as a rate of change (%) with respect to an appropriate reference value. As described above, LF_Vpp increases due to the influence of changes over time and fluctuations in FRDC_V. The graph in FIG. 4 shows how LF_Vpp increases monotonically from the start of plasma process until the RF application time has passed 50 hours, after the 50 hours have passed, until the 100 hours have passed, and so on. In this embodiment, the control unit 2 corrects LF_pw to suppress the rise of LF_Vpp.

[0036] The control unit 2 corrects LF_pw, for example, using a correction formula expressed by the following equation 1.

[0037]

number

[0038] Here, Cor LF_pw represents the correction amount for the current value of the bias power. As shown in Equation 1, the correction amount Cor LF_pw for the bias power is expressed as a function of average LF_Vpp (average Vpp), initial LF_Vpp (initial Vpp), Cor FRDC (correction amount of FRDC_V), and correction coefficients α and β. The function form of Equation 1 is determined so that the correction amount Cor LF_pw takes a negative value.

[0039] The control unit 2 corrects LF_pw according to Equation 1, for example, at the timing when FRDC_V is corrected. LF_pw is subtracted by the correction. The graph in FIG. 4 shows how FRDC_V is corrected and LF_pw is corrected each time 50 hours of RF application time has elapsed. LF_pw is subtracted stepwise by about 1% by the correction. Also, LF_Vpp is corrected to match the initial Vpp by the correction of LF_pw.

[0040] 4 shows an example in which LF_pw is corrected at the timing of correcting FRDC_V, but the control unit 2 may be configured to observe LF_Vpp and correct LF_pw when the fluctuation of LF_Vpp exceeds a threshold. The threshold is set based on the initial Vpp, for example. In one example, the threshold is set to the initial Vpp×1.005.

[0041] (3) HF_pw correction HF_Vpp rises due to the effect of the correction of LF_pw. As HF_Vpp rises, product characteristics may deteriorate. The control unit 2 corrects HF_pw to suppress the deterioration of the product characteristics.

[0042] 5 is a graph for explaining an example of correction of HF_pw. The horizontal axis of the graph represents RF application time, and the vertical axis represents HF_pw and HF_Vpp. RF application time represents the time elapsed since the end of seasoning processing and the start of actual plasma processing. HF_pw and HF_Vpp are represented as a rate of change (%) with respect to an appropriate reference value. HF_Vpp rises under the influence of fluctuations in LF_pw. In this embodiment, the control unit 2 corrects HF_pw to suppress the rise in HF_Vpp.

[0043] The control unit 2 corrects HF_pw, for example, using the correction formula expressed by the following equation 2.

[0044]

number

[0045] Here, Cor HF_pw represents the amount of correction to the current value of the source power. As shown in Equation 2, the amount of correction Cor HF_pw to the source power is expressed as a function of Cor LF_pw and a correction coefficient γ. The function form of Equation 2 is determined so that the ratio between the source power and the bias power is fixed.

[0046] The procedure for correcting FRDC_V and RF_pw will be described below. 6 is a flowchart for explaining the procedure for executing the correction process in the embodiment 1. After consumables including the edge ring 112a are replaced in the plasma processing apparatus 1 and a process is started according to a recipe that defines the processing steps, the control unit 2 executes the following procedure. The control unit 2 measures the elapsed time from the start of the process in the plasma processing apparatus 1, and determines whether a predetermined time (e.g., 25 hours) has elapsed (step S101).

[0047] When it is determined that the predetermined time has not elapsed (S101: NO), the control unit 2 collects the value of LF_Vpp (step S102). The control unit 2 stores the collected value of LF_Vpp in the storage unit 2a2 in association with the time, and returns the process to step S101.

[0048] When it is determined that the predetermined time has elapsed (S101: YES), the control unit 2 calculates the initial Vpp based on the value of LF_Vpp stored in the memory unit 2a2 (step S103). The control unit 2 calculates the average value of the LF_Vpp stored in the memory unit 2a2 as the initial Vpp. Alternatively, the control unit 2 may calculate the median or moving average of the LF_Vpp stored in the memory unit 2a2 as the initial Vpp. The control unit 2 stores the calculated initial Vpp in the memory unit 2a2.

[0049] Next, the control unit 2 determines whether or not to correct FRDC_V (step S104). In this embodiment, the control unit 2 corrects FRDC_V every time 50 hours of RF application time has elapsed. In this case, the control unit 2 can determine whether or not to correct FRDC_V by determining whether 50 hours have elapsed since the start of the process or whether 50 hours have elapsed since the previous correction.

[0050] When it is determined in step S104 that correction is to be performed (S104: YES), the control unit 2 corrects FRDC_V (step S105). The control unit 2 increases the FRDC_V applied to the edge ring 112a by a predetermined increase amount by controlling the operation of the variable DC power supply 33. The increase amount is assumed to be stored in advance in the storage unit 2a2. In one example, the increase amount is 25 V until a total of 200 hours of RF application time has elapsed, and is 12.5 V after 200 hours have elapsed. After correcting FRDC_V, the control unit 2 executes the process of step S107 described later and corrects RF_pw as well.

[0051] If it is determined in step S104 that no correction is to be performed (S104: NO), the control unit 2 determines whether or not to correct RF_pw (step S106). The control unit 2 observes LF_Vpp, and can determine to correct RF_pw when, for example, the average LF_Vpp exceeds a threshold. The threshold is set to, for example, a value 1.005 times the initial Vpp calculated in step S103.

[0052] When it is determined in step S106 that RF_pw is not to be corrected (S106: NO), the control unit 2 executes the processes in and after step S109.

[0053] If it is determined in step S106 that RF_pw should be corrected (S106: YES), or if FRDC_V has been corrected in step S105, the control unit 2 corrects RF_pw (step S107). In step S107, the control unit 2 corrects both the bias power and the source power.

[0054] The control unit 2 calculates the correction amount of LF_pw according to the current average LF_Vpp, initial LF_Vpp, and the correction amount of FRDC_V, for example, based on Equation 1. The control unit 2 also calculates the correction amount of HF_pw so as to maintain HF_Vpp while fixing the ratio of HF_pw and LF_pw, for example, based on Equation 2. The control unit 2 can calculate the values ​​of LF_pw and HF_pw after correction, based on the calculated correction amounts of LF_pw and HF_pw.

[0055] The control unit 2 controls the first RF generating unit 31a to generate a source RF signal (source RF power) so as to satisfy the corrected HF_pw. The generated source RF signal (source RF power) is supplied to at least one lower electrode and / or at least one upper electrode. The control unit 2 also controls the second RF generating unit 31b to generate a bias RF signal (bias RF power) so as to satisfy the corrected LF_pw. The generated bias RF signal (bias RF power) is supplied to at least one lower electrode.

[0056] Next, the control unit 2 outputs various correction values ​​(step S108). The correction values ​​output by the control unit 2 include the correction value of FRDC_V calculated in step S105 and the correction value of RF_pw calculated in step S107. The control unit 2 outputs information including these correction values ​​to an external computer through the communication interface 2a3. The external computer may be a management server that comprehensively manages multiple plasma processing apparatuses 1, or may be a mobile terminal carried by an administrator of the plasma processing apparatuses 1. In addition, if the computer 2a is equipped with a display unit such as a liquid crystal display, the control unit 2 may cause the display unit to display information including the above correction values.

[0057] Next, the control unit 2 determines whether the process has been completed (step S109). The completion of the process is determined based on the recipe. If the control unit 2 determines that the process has not been completed (S109: NO), the control unit 2 returns the process to step S104. If the control unit 2 determines that the process has been completed (S109: YES), the control unit 2 ends the process according to this flowchart.

[0058] Fig. 7 is a diagram showing an example of output of correction values. When the control unit 2 calculates the correction values ​​for FRDC_V and RF_pw, the control unit 2 generates a correction value table in which output items and values ​​of each item are paired as shown in Fig. 7, and outputs the correction value table in step S108 described above.

[0059] The correction value table shown in Fig. 7 includes FRDC_Current, FRDC_Delta, and FRDC (Optimized) as output items related to the correction of FRDC_V. Here, FRDC_Current represents the current control value of FRDC_V. FRDC_Delta is the correction amount of FRDC_V and represents the difference from the current control value. FRDC (Optimized) represents the correction value of FRDC_V (the control value of FRDC_V after correction).

[0060] 7 includes LF_Power_Current, LF_Power_Delta, LF_Power_Delta(Pecentage), and LF_Power(Optimized) as output items related to LF_pw. Here, LF_Power_Current represents the current control value of LF_pw. LF_Power_Delta is the correction amount of LF_pw, and represents the difference from the current control value. LF_Power_Delta(Pecentage) is the correction ratio of LF_pw, and represents the rate of change with respect to the current control value. LF_Power(Optimized) represents the correction value of LF_pw (the control value of LF_pw after correction).

[0061] Moreover, the correction value table shown in FIG. 7 includes HF_Power_Current, HF_Power_Delta, HF_Power_Delta(Pecentage), and HF_Power(Optimized) as output items related to HF_pw. Here, HF_Power_Current represents the current control value of HF_pw. HF_Power_Delta is the correction amount of HF_pw and represents the difference from the current control value. HF_Power_Delta(Pecentage) is the correction ratio of HF_pw and represents the rate of change with respect to the current control value. HF_Power(Optimized) represents the correction value of HF_pw (the control value of HF_pw after correction).

[0062] The output items of the correction value table are not limited to those shown in Fig. 7 and may be set appropriately. For example, the correction value table may include values ​​measured during the execution of a process as output items, such as RF application time, FRDC_V, LF_Vpp, LF_pw, HF_Vpp, and HF_pw. The correction value table may also include parameters used in correction calculations as output items, such as initial Vpp and correction coefficients α, β, and γ. Furthermore, the correction value table may include control ranges (upper and lower limits) of FRDC_V, LF_Vpp, LF_pw, HF_Vpp, and HF_pw as output items.

[0063] The control unit 2 may output the generated correction value table to an external computer via the communication interface 2a3. The control unit 2 may also cause the display unit to display the generated correction value table.

[0064] As described above, in the first embodiment, the control unit 2 corrects FRDC_V according to the RF application time, and therefore it is possible to suppress the degradation of the process characteristics due to the wear of the edge ring 112a. Also, in the first embodiment, the control unit 2 corrects RF_pw when the average LF_Vpp exceeds the threshold value or when the control unit 2 corrects FRDC_V, and therefore it is possible to suppress the deterioration of the product characteristics.

[0065] In the first embodiment, the control unit 2 is configured to execute the correction process, but the correction process may be executed by an external server such as a cloud server that is communicable with the control unit 2. In addition, the program installed in the control unit 2 may be provided as a program product.

[0066] (Embodiment 2) In the second embodiment, a configuration will be described in which the peak-to-peak voltage (HF_Vpp) of the source power is observed, and the source power and bias power are corrected in response to fluctuations in HF_Vpp. The overall configuration of the plasma processing system, the internal configuration of the plasma processing apparatus 1, the internal configuration of the control unit 2, etc. are similar to those in the first embodiment, and therefore description thereof will be omitted.

[0067] 8 is a flowchart for explaining the procedure for executing the correction process in the embodiment 2. After consumables including the edge ring 112a are replaced in the plasma processing apparatus 1 and a process is started according to a recipe that defines the processing steps, the control unit 2 executes the following procedure. The control unit 2 measures the elapsed time from the start of the process in the plasma processing apparatus 1, and determines whether a predetermined time (e.g., 25 hours) has elapsed (step S201).

[0068] When it is determined that the predetermined time has not elapsed (S201: NO), the control unit 2 collects the HF_Vpp value (step S202). The control unit 2 stores the collected HF_Vpp value in the storage unit 2a2 in association with the time, and returns the process to step S201.

[0069] When it is determined that the predetermined time has elapsed (S201: YES), the control unit 2 calculates the initial Vpp based on the value of HF_Vpp stored in the memory unit 2a2 (step S203). The control unit 2 calculates the average value of the LF_Vpp stored in the memory unit 2a2 as the initial Vpp. Alternatively, the control unit 2 may calculate the median or moving average of the LF_Vpp stored in the memory unit 2a2 as the initial Vpp. The control unit 2 stores the calculated initial Vpp in the memory unit 2a2.

[0070] Next, the control unit 2 determines whether or not to correct FRDC_V (step S204). In this embodiment, the control unit 2 corrects FRDC_V every time 50 hours of RF application time has elapsed. In this case, the control unit 2 can determine whether or not to correct FRDC_V by determining whether 50 hours have elapsed since the start of the process or whether 50 hours have elapsed since the previous correction.

[0071] When it is determined in step S204 that correction is to be performed (S204: YES), the control unit 2 corrects FRDC_V (step S205). The control unit 2 increases the FRDC_V applied to the edge ring 112a by a predetermined increase amount by controlling the operation of the variable DC power supply 33. The increase amount is assumed to be stored in advance in the storage unit 2a2. In one example, the increase amount is 25 V until a total of 200 hours of RF application time has elapsed, and is 12.5 V after 200 hours have elapsed. After correcting FRDC_V, the control unit 2 executes the process of step S207 described later and corrects RF_pw as well.

[0072] If it is determined in step S204 that correction is not to be performed (S204: NO), the control unit 2 determines whether or not to correct RF_pw (step S206). The control unit 2 observes HF_Vpp, and can determine to correct RF_pw when, for example, the average HF_Vpp exceeds a threshold. The threshold is set to, for example, a value 1.005 times the initial Vpp calculated in step S203.

[0073] When it is determined in step S206 that RF_pw is not to be corrected (S206: NO), the control unit 2 executes the processes in and after step S209.

[0074] If it is determined in step S206 that RF_pw should be corrected (S206: YES), or if FRDC_V has been corrected in step S205, the control unit 2 corrects RF_pw (step S207). In step S207, the control unit 2 corrects both the bias power and the source power. Specifically, the control unit 2 corrects both the bias power and the source power so that the observed HF_Vpp approaches the initial setting value (initial Vpp) while fixing the ratio between HF_pw and LF_pw, as in the first embodiment.

[0075] The control unit 2 controls the first RF generating unit 31a to generate a source RF signal (source RF power) so as to satisfy the corrected HF_pw. The generated source RF signal (source RF power) is supplied to at least one lower electrode and / or at least one upper electrode. The control unit 2 also controls the second RF generating unit 31b to generate a bias RF signal (bias RF power) so as to satisfy the corrected LF_pw. The generated bias RF signal (bias RF power) is supplied to at least one lower electrode.

[0076] Next, the control unit 2 outputs various correction values ​​(step S208). The correction values ​​output by the control unit 2 are the same as those in the first embodiment. The control unit 2 outputs information including the correction values ​​to an external computer through the communication interface 2a3. The external computer may be a management server that comprehensively manages a plurality of plasma processing apparatuses 1, or may be a mobile terminal carried by an administrator of the plasma processing apparatuses 1. In addition, if the computer 2a is equipped with a display unit such as a liquid crystal display, the control unit 2 may cause the display unit to display information including the correction values.

[0077] Next, the control unit 2 determines whether the process has been completed (step S209). The completion of the process is determined based on the recipe. If the control unit 2 determines that the process has not been completed (S209: NO), the control unit 2 returns the process to step S204. If the control unit 2 determines that the process has been completed (S209: YES), the control unit 2 ends the process according to this flowchart.

[0078] (Embodiment 3) As described above, a pulse voltage may be applied to the lower electrode of the plasma processing apparatus 1. In this case, the control unit 2 may observe the current value of the pulse voltage applied to the lower electrode of the plasma processing apparatus 1, and correct the source power and the pulse voltage according to the fluctuation of the observed current value. In the third embodiment, a configuration for correcting the source power and the pulse voltage according to the fluctuation of the current value of the pulse voltage applied to the lower electrode will be described. The overall configuration of the plasma processing system, the internal configuration of the plasma processing apparatus 1, the internal configuration of the control unit 2, etc. are similar to those in the first embodiment, and therefore description thereof will be omitted.

[0079] 9 is a flowchart for explaining the procedure for executing the correction process in the embodiment 3. After consumables including the edge ring 112a are replaced in the plasma processing apparatus 1 and a process is started according to a recipe that defines the processing steps, the control unit 2 executes the following procedure. The control unit 2 measures the elapsed time from the start of the process in the plasma processing apparatus 1, and determines whether a predetermined time (e.g., 25 hours) has elapsed (step S301).

[0080] When it is determined that the predetermined time has not elapsed (S301: NO), the control unit 2 collects the current value of the pulse voltage applied to the lower electrode (step S302). The control unit 2 stores the collected current value in the memory unit 2a2 in association with the time, and returns the process to step S301.

[0081] When it is determined that the predetermined time has elapsed (S301: YES), the control unit 2 calculates an initial current value based on the current values ​​stored in the memory unit 2a2 (step S303). The control unit 2 calculates the average value of the current values ​​stored in the memory unit 2a2 as the initial current value. Alternatively, the control unit 2 may calculate the median or moving average of the current values ​​stored in the memory unit 2a2 as the initial current value. The control unit 2 stores the calculated initial current value in the memory unit 2a2.

[0082] Next, the control unit 2 determines whether or not to correct FRDC_V (step S304). In this embodiment, the control unit 2 corrects FRDC_V every time 50 hours of RF application time has elapsed. In this case, the control unit 2 can determine whether or not to correct FRDC_V by determining whether 50 hours have elapsed since the start of the process or whether 50 hours have elapsed since the previous correction.

[0083] When it is determined in step S304 that correction is to be performed (S304: YES), the control unit 2 corrects FRDC_V (step S305). The control unit 2 increases the FRDC_V applied to the edge ring 112a by a predetermined increase amount by controlling the operation of the variable DC power supply 33. The increase amount is assumed to be stored in advance in the storage unit 2a2. In one example, the increase amount is 25 V until a total of 200 hours of RF application time has elapsed, and is 12.5 V after 200 hours have elapsed. After correcting FRDC_V, the control unit 2 executes the process of step S307 described later, and corrects both the source power and the pulse voltage.

[0084] If it is determined in step S304 that no correction is to be made (S304: NO), the control unit 2 determines whether or not to correct the source power and the pulse voltage (step S306). The control unit 2 observes the current value of the pulse voltage applied to the lower electrode, and when the observed current value exceeds a threshold, it can determine that the source power and the pulse voltage are to be corrected. The threshold is set, for example, based on the initial current value calculated in step S303.

[0085] When it is determined in step S306 that correction is not required (S306: NO), the control unit 2 executes the processes in step S309 and thereafter.

[0086] If it is determined in step S306 that correction is to be performed (S306: YES), or if FRDC_V is corrected in step S305, the control unit 2 corrects the source power for plasma generation and the pulse voltage applied to the lower electrode (step S307). Specifically, while fixing the ratio between the source power and the pulse voltage, the control unit 2 corrects both the source power and the pulse voltage so that the current value of the observed pulse voltage approaches the initial current value.

[0087] The control unit 2 controls the first RF generating unit 31a to generate a source RF signal (source RF power) so as to satisfy the corrected HF_pw. The generated source RF signal (source RF power) is supplied to at least one lower electrode and / or at least one upper electrode. The control unit 2 also controls the first DC generating unit 32a to generate a corrected pulse voltage. The generated pulse voltage is supplied to at least one lower electrode.

[0088] Next, the control unit 2 outputs various correction values ​​(step S308). The correction values ​​output by the control unit 2 include the correction value of FRDC_V calculated in step S305 and the correction values ​​of the source power and pulse voltage calculated in step S307. The control unit 2 outputs information including these correction values ​​to an external computer through the communication interface 2a3. The external computer may be a management server that comprehensively manages multiple plasma processing apparatuses 1, or may be a mobile terminal carried by an administrator of the plasma processing apparatuses 1. In addition, if the computer 2a is equipped with a display unit such as a liquid crystal display, the control unit 2 may cause the display unit to display information including the above correction values.

[0089] Next, the control unit 2 determines whether the process has been completed (step S309). The completion of the process is determined based on the recipe. If the control unit 2 determines that the process has not been completed (S309: NO), the control unit 2 returns the process to step S304. If the control unit 2 determines that the process has been completed (S309: YES), the control unit 2 ends the process according to this flowchart.

[0090] (Embodiment 4) In the plasma processing apparatus 1 according to the fourth embodiment, a pulse voltage is applied to the edge ring 112a instead of FRDC_V. For example, the first DC generating unit 32a included in the plasma processing apparatus 1 applies a pulse voltage to at least one lower electrode and also applies a pulse voltage to the edge ring 112a. In such a plasma processing apparatus 1, the pulse voltage applied to the edge ring 112a may be corrected, and the source power for plasma generation and the pulse voltage applied to the lower electrode may be corrected. In the fourth embodiment, the pulse voltage applied to the edge ring 112a is referred to as a first pulse voltage, and the pulse voltage applied to the lower electrode is referred to as a second pulse voltage.

[0091] 10 is a flowchart for explaining the procedure for executing the correction process in the embodiment 4. After consumables including the edge ring 112a are replaced in the plasma processing apparatus 1 and a process is started according to a recipe that defines the processing steps, the control unit 2 executes the following procedure. The control unit 2 measures the elapsed time from the start of the process in the plasma processing apparatus 1, and determines whether a predetermined time (e.g., 25 hours) has elapsed (step S401).

[0092] When it is determined that the predetermined time has not elapsed (S401: NO), the control unit 2 collects the current value of the second pulse voltage (step S402). The control unit 2 stores the collected current value in the memory unit 2a2 in association with the time, and returns the process to step S401.

[0093] When it is determined that the predetermined time has elapsed (S401: YES), the control unit 2 calculates an initial current value based on the current values ​​stored in the memory unit 2a2 (step S403). The control unit 2 calculates the average value of the current values ​​stored in the memory unit 2a2 as the initial current value. Alternatively, the control unit 2 may calculate the median or moving average of the current values ​​stored in the memory unit 2a2 as the initial current value. The control unit 2 stores the calculated initial current value in the memory unit 2a2.

[0094] Next, the control unit 2 determines whether or not to correct the first pulse voltage (step S404). In this embodiment, the control unit 2 corrects the first pulse voltage every time the RF application time has elapsed for 50 hours. In this case, the control unit 2 can determine whether or not to correct the first pulse voltage by determining whether or not 50 hours have elapsed since the start of the process or whether or not 50 hours have elapsed since the previous correction.

[0095] When it is determined in step S404 that the first pulse voltage is to be corrected (S404: YES), the control unit 2 corrects the first pulse voltage (step S405). The control unit 2 increases the magnitude of the pulse voltage applied to the edge ring 112a by controlling the operation of the first DC generating unit 32a. The increase amount is assumed to be stored in advance in the storage unit 2a2. After correcting the first pulse voltage, the control unit 2 executes the process of step S407 described later, and corrects both the source power and the second pulse voltage.

[0096] When it is determined in step S404 that no correction is to be performed (S404: NO), the control unit 2 determines whether or not to correct the source power and the second pulse voltage (step S406). The control unit 2 observes the current value of the second pulse voltage applied to the lower electrode, and when the observed current value exceeds a threshold, it can determine that the source power and the second pulse voltage are to be corrected. The threshold is set, for example, based on the initial current value calculated in step S403.

[0097] When it is determined in step S406 that no correction is to be made (S406: NO), the control unit 2 executes the processes in and after step S409.

[0098] If it is determined in step S406 that correction is to be performed (S406: YES), or if the first pulse voltage is corrected in step S405, the control unit 2 corrects the source power and the second pulse voltage (step S407). Specifically, the control unit 2 corrects both the source power and the second pulse voltage so that the observed current value of the second pulse voltage approaches the initial current value while fixing the ratio between the source power and the second pulse voltage.

[0099] The control unit 2 controls the first RF generating unit 31a to generate a source RF signal (source RF power) so as to satisfy the corrected HF_pw. The generated source RF signal (source RF power) is supplied to at least one lower electrode and / or at least one upper electrode. The control unit 2 also controls the first DC generating unit 32a to generate a corrected second pulse voltage. The generated second pulse voltage is supplied to at least one lower electrode.

[0100] Next, the control unit 2 outputs various correction values ​​(step S408). The correction values ​​output by the control unit 2 include the correction value of the first pulse voltage calculated in step S405, and the correction values ​​of the source power and the second pulse voltage calculated in step S407. The control unit 2 outputs information including these correction values ​​to an external computer through the communication interface 2a3. The external computer may be a management server that comprehensively manages a plurality of plasma processing apparatuses 1, or may be a mobile terminal carried by an administrator of the plasma processing apparatuses 1. In addition, when the computer 2a is equipped with a display unit such as a liquid crystal display, the control unit 2 may cause the display unit to display information including the above correction values.

[0101] Next, the control unit 2 determines whether the process has been completed (step S409). The completion of the process is determined based on the recipe. If the control unit 2 determines that the process has not been completed (S409: NO), the control unit 2 returns the process to step S404. If the control unit 2 determines that the process has been completed (S409: YES), the control unit 2 ends the process according to this flowchart.

[0102] (Embodiment 5) In the fifth embodiment, an overcorrection prevention function will be described. The configurations of the plasma processing apparatus 1 and the control unit 2 are the same as those in the first embodiment, and therefore the description thereof will be omitted.

[0103] As described in the first embodiment, when the average LF_Vpp exceeds the threshold value or when the FRDC_V is corrected, the control unit 2 corrects LF_pw and HF_pw based on the formulas 1 and 2. However, if the amount of correction is large, the source power and bias power become low, and there is a possibility that the required process performance cannot be achieved. Therefore, in the fifth embodiment, an overcorrection prevention function is provided for the correction of LF_pw and HF_pw.

[0104] 11 is a flowchart showing the procedure for performing the overcorrection prevention process. When the control unit 2 calculates the correction amounts for LF_pw and HF_pw, the control unit 2 performs the following process.

[0105] In step S501, the control unit 2 determines whether the absolute value of the correction amount for LF_pw (|Cor LF_pw|) is equal to or greater than a first threshold. The first threshold is set to, for example, 5% of the current LF_pw (LF_pw×0.05). Note that the first threshold is not limited to 5% of LF_pw and may be set appropriately.

[0106] In step S502, the control unit 2 determines whether the absolute value of the correction amount for HF_pw (|Cor HF_pw|) is equal to or greater than a second threshold value. The second threshold value is set to, for example, 5% of the current HF_pw (HF_pw×0.05). Note that the second threshold value is not limited to 5% of HF_pw and may be set appropriately.

[0107] In step S501, if it is determined that |Cor LF_pw| is equal to or greater than the first threshold, or in step S502, if it is determined that |Cor HF_pw| is equal to or greater than the second threshold, the control unit 2 stops correcting LF_pw and HF_pw (step S503). In this case, the process continues without changing LF_pw and HF_pw.

[0108] On the other hand, when it is determined in step S501 that |Cor LF_pw| is less than the first threshold value, and when it is determined in step S502 that |Cor HF_pw| is less than the second threshold value, the control unit 2 ends the process according to this flowchart without stopping the correction. In this case, LF_pw and HF_pw are corrected, and the process continues.

[0109] As described above, in the fifth embodiment, by providing an overcorrection prevention function for the correction of LF_pw and HF_pw, it is possible to prevent the values ​​of the source power and bias power from becoming lower than the expected range.

[0110] (Embodiment 6) In the sixth embodiment, a procedure for calibrating the correction coefficients α, β, and γ will be described. The configurations of the plasma processing apparatus 1 and the control unit 2 are the same as those in the first embodiment, and therefore the description thereof will be omitted.

[0111] In a plasma processing apparatus, the processing chamber is generally periodically opened to the atmosphere to replace components including an edge ring, remove deposits from the processing chamber, etc., so-called wet cleaning is performed. However, the atmosphere in the processing chamber immediately after wet cleaning is different from the atmosphere during stable mass production, and as a result, the plasma processing performance changes before and after wet cleaning.

[0112] In order to solve such problems, a plasma process simulating the plasma process during mass production (hereinafter referred to as a seasoning process) has been performed to make the condition inside the process chamber closer to that during stable mass production. In the seasoning process, plasma processing is often performed using a dummy object to be processed that is different from the object to be processed for production, to simulate the plasma processing during mass production.

[0113] In the sixth embodiment, the correction coefficients are calibrated for each seasoning process by embedding a step for calibrating the correction coefficients α, β, and γ in a seasoning recipe that describes the procedure of the seasoning process. Various recipes including the seasoning recipe in which the step for calibrating the correction coefficients is embedded are stored in advance in the storage unit 2a2 in the control unit 2, for example.

[0114] 12 is a flowchart illustrating the procedure for calibrating the correction coefficient. The control unit 2 determines whether or not seasoning is required (step S601). When the plasma processing chamber 10 is opened to the atmosphere in order to replace components of the plasma processing apparatus 1, including the edge ring 112a, or to remove deposits from within the processing chamber, the control unit 2 determines that seasoning is required. When it is determined that seasoning is not required (S601: NO), the control unit 2 ends the process according to this flowchart.

[0115] When it is determined that seasoning processing is necessary (S601: YES), the control unit 2 reads a seasoning recipe in which a step for calibrating the correction coefficient is embedded from the storage unit 2a2 (step S602), and executes the seasoning processing according to the read seasoning recipe (step S603).

[0116] The control unit 2 calibrates the correction coefficients α, β, and γ in accordance with the step for calibrating the correction coefficients during the seasoning process. For example, the control unit 2 can calibrate the correction coefficients α, β, and γ by analyzing the values ​​of LF_pw, LF_Vpp, HF_pw, and HF_Vpp measured in the step for calibrating the correction coefficients.

[0117] By executing a seasoning recipe in which a step for calibrating the correction coefficients is embedded, the calibrated correction coefficients α, β, and γ are obtained, and the control unit 2 stores the obtained correction coefficients α, β, and γ in the memory unit 2a2 (step S604).

[0118] When multiple types of seasoning recipes with different numbers of steps are prepared, the initial values ​​and the calibration method for calibrating the correction coefficients may be different for each seasoning recipe.

[0119] As described above, in the sixth embodiment, the correction coefficients are calibrated each time a seasoning process is performed, so that the source power and bias power can be corrected using appropriate correction coefficients regardless of the machine difference of the plasma processing apparatus 1.

[0120] In the sixth embodiment, the correction coefficients are calibrated by embedding a step for calibrating the correction coefficients α, β, and γ in the seasoning recipe. However, a recipe for coefficient correction may be executed independently without embedding the step in the seasoning recipe.

[0121] The embodiments disclosed herein are illustrative in all respects and should not be considered as limiting. The scope of the present invention is defined by the claims, not by the above meaning, and is intended to include all modifications within the meaning and scope of the claims.

[0122] In the embodiment, an example of application to a capacitively coupled plasma processing apparatus 1 has been described, but the present invention is not limited to the capacitively coupled type and can be applied to any type of plasma processing apparatus, including Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP).

[0123] In the embodiment, a wafer W has been described as an example of a substrate to be processed, but the substrate to be processed is not limited to a wafer W and may be various substrates used in FPDs (Flat Panel Displays), printed circuit boards, etc. [Explanation of symbols]

[0124] 1. Plasma processing equipment 2. Control section 2a Computer 2a1 Processing section 2a2 Storage section 2a3 Communication Interface 10 Plasma Processing Chamber 11 Substrate support 20 Gas supply section 30 power supply 31 RF power supply 31a First RF generation unit 31b Second RF generation unit 32 DC power supply 32a First DC generation unit 32b Second DC generation section 33 Variable DC power supply 112 Ring Assembly 112a Edge Ring 112b Covering

Claims

1. A control program for a plasma processing apparatus that performs plasma processing by supplying source power to a plasma generation source and supplying bias power to a mounting table on which a substrate to be processed is placed, comprising: Observing a peak-to-peak voltage value of the source power or the bias power; A ratio of the source power and the bias power is fixed in accordance with the fluctuation of the peak-to-peak voltage value, and the source power supplied to the plasma generation source and the bias power supplied to the mounting table are corrected so that the observed peak-to-peak voltage value approaches an initial setting value. A control program that causes a computer to execute processing.

2. A value of a DC voltage applied to an outer peripheral member disposed around the mounting table is corrected according to application times of the source power and the bias power. The control program according to claim 1 , for causing the computer to execute a process.

3. When the observed peak-to-peak voltage value exceeds a threshold value or when the value of the DC voltage is corrected, the source power and the bias power are corrected. The control program according to claim 2, for causing the computer to execute a process.

4. A correction coefficient used for correcting the source power and the bias power is calibrated every time a seasoning process is performed after replacing a component including the outer peripheral member.

4. The control program according to claim 2, for causing the computer to execute processing.

5. The correction coefficient is calibrated by executing the seasoning process based on a seasoning recipe in which a step for calibrating the correction coefficient is embedded. The control program according to claim 4.

6. Collecting a peak-to-peak voltage value of the source power or the bias power after calibrating the correction factor; Calculate the initial setting value based on the collected results.

6. The control program according to claim 4, for causing the computer to execute processing.

7. If the corrected source power or bias power exceeds the set range, a warning is output.

7. The control program according to claim 1, for causing the computer to execute a process.

8. A control program for a plasma processing apparatus that performs plasma processing by supplying source power to a plasma generation source and applying a pulse voltage to a mounting table on which a substrate to be processed is placed, comprising: Observe the current value of the pulse voltage; According to the fluctuation of the current value, a ratio of the source power and the pulse voltage is fixed, and the source power supplied to the plasma generation source and the pulse voltage applied to the mounting table are corrected so that the current value of the observed pulse voltage approaches an initial setting value. A control program that causes a computer to execute processing.

9. 1. A method for controlling a plasma processing apparatus that performs plasma processing by supplying source power to a plasma generation source and supplying bias power to a mounting table on which a substrate to be processed is placed, comprising the steps of: Observing a peak-to-peak voltage value of the source power or the bias power; A ratio of the source power and the bias power is fixed in accordance with the fluctuation of the peak-to-peak voltage value, and the source power supplied to the plasma generation source and the bias power supplied to the mounting table are corrected so that the observed peak-to-peak voltage value approaches an initial setting value. A control method in which processing is carried out by a computer.

10. 1. A method for controlling a plasma processing apparatus that performs plasma processing by supplying source power to a plasma generation source and applying a pulse voltage to a mounting table on which a substrate to be processed is placed, comprising the steps of: Observe the current value of the pulse voltage; According to the fluctuation of the current value, a ratio of the source power and the pulse voltage is fixed, and the source power supplied to the plasma generation source and the pulse voltage applied to the mounting table are corrected so that the current value of the observed pulse voltage approaches an initial setting value. A control method for executing processing by a computer.

11. A plasma generating apparatus including a mounting table for mounting a substrate to be processed thereon, an outer peripheral member disposed around the mounting table, a first power supply for supplying source power to a plasma generation source, a second power supply for supplying bias power to the mounting table, a third power supply for applying a DC voltage to the outer peripheral member, and a control unit, an observation unit that observes a peak-to-peak voltage value of the source power or the bias power; a correction unit that fixes a ratio between the source power and the bias power in accordance with a fluctuation in the peak-to-peak voltage value and corrects the source power supplied by the first power source and the bias power supplied by the second power source so that the observed peak-to-peak voltage value approaches an initial setting value; Equipped with The control unit controls the operation of the first power source and the second power source so as to supply the source power and the bias power corrected by the correction unit to the plasma generation source and the mounting table, respectively. Plasma generating device.

12. A plasma generating apparatus including: a mounting table for mounting a substrate to be processed thereon; an outer peripheral member disposed around the mounting table; a first power source for supplying source power to a plasma generating source; a second power source for applying a pulse voltage to the mounting table; a third power source for applying a DC voltage to the outer peripheral member; and a control unit, An observation unit that observes a current value of the pulse voltage; a correction unit that fixes a ratio of the source power and the pulse voltage in response to a fluctuation in the current value and corrects the source power supplied by the first power source and the pulse voltage applied by the second power source so that the current value of the observed pulse voltage approaches an initial setting value; Equipped with The control unit controls operations of the first power source and the second power source so as to supply the source power corrected by the correction unit to the plasma generation source and to apply a corrected pulse voltage to the mounting table. Plasma generating device.

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