Apparatus and method for oriented deposition - Patents.com

Abstract

Apparatus and methods for the vapor deposition of high aspect ratio molecular structures, HARM structures, are presented. A first aspect relates to an apparatus configured for oriented vapor deposition of HARM structures on filters. A second aspect relates to an apparatus configured for oriented vapor deposition of HARM structures on substrates. A system is also presented that includes a plurality of apparatuses according to the second aspect. The apparatus elements are arranged to form a laminar flow of gas containing the HARM structures in a deposition region and to direct this flow at least partially parallel to the deposition region. Another aspect of the invention is a method for oriented deposition of HARM structures, suitable for deposition on both filters and substrates.

Description

[Technical field]

[0001] The present invention relates to vapor phase deposition, and in particular to deposition methods and apparatus that include means for the oriented deposition of high aspect ratio molecular structures. [Background technology]

[0002] High aspect ratio molecular structures (HARM structures), such as carbon nanotubes, carbon nanobuds, or other high aspect ratio nanoscale structures, have unique electrical, optical, thermal, and mechanical properties that make them promising materials for many applications.

[0003] To deposit a HARM structure, a force such as drag, electrostatic, inertial, photophoretic, thermophoretic, or acoustic force is typically applied to the aerosol or gas containing the HARM structure. The force can move portions of the HARM structure based on one or more physical properties toward a predetermined location for depositing the HARM structure in a pattern by the applied force. The properties of the HARM structure can be anisotropic. Therefore, an apparatus and method for oriented deposition of HARM structures would be desirable. Summary of the Invention [Means for solving the problem]

[0004] The device according to the invention is characterized in that what is stated in independent claim 1 and independent claim 17.

[0005] The method according to the invention is characterized in that what is presented in independent claim 24.

[0006] According to a first aspect of the present invention, an apparatus is provided. The apparatus may be for deposition of high aspect ratio molecular (HARM) structures or for oriented deposition of HARM structures. The apparatus includes a deposition chamber, a filter, an inlet, an outlet, and a control system. The deposition chamber is horizontally elongated and includes an upper portion with a top cover and a lower portion with a bottom cover. The filter is horizontally disposed in the deposition chamber and separates the upper and lower portions, the filter including a deposition region. The deposition region refers to an area on the filter where deposition may occur under certain conditions. The filter may have one or more deposition regions.

[0007] The inlet is disposed in an upper portion of the deposition chamber and configured to supply a gas containing the HARM structure to the deposition chamber. The outlet is disposed in a lower portion of the deposition chamber and configured to withdraw the gas from the deposition chamber. The gas withdrawn from the deposition chamber may be the gas containing the HARM structure after or during deposition of the HARM structure. The control system is configured to control the gas flow at the inlet and outlet.

[0008] In this specification, the terms "top", "bottom", "horizontal", and any other terms indicating geometric location should not be construed to limit the device to a particular geometric configuration. These terms are used for clarity only, to facilitate understanding of the overall geometry of the claimed invention, and to describe the interrelationship of the elements of the device. "Horizontal" does not have to be exactly horizontal or parallel to the ground, and "top" and "bottom" may be interchangeable and may simply refer to any two opposing portions of a structure.

[0009] Further according to the first aspect, the inlet, outlet and filter are arranged to form a gas flow path for the gas containing the HARM structure passing through the filter from the inlet of the upper section to the outlet of the lower section. The direction of flow of the gas containing the HARM structure (when flowing along the path) adjacent to the deposition area of ​​the filter is at least partially parallel to the filter. This is achieved by the proper positioning of the components relative to each other, such as the inlet and outlet being located on opposite sides of the filter, and may be assisted by the dimensions of the deposition chamber and additional elements within the deposition chamber according to some embodiments below.

[0010] Additionally, the control system and the relative positions of the inlet, outlet, top cover, bottom cover and filter are arranged to maintain laminar gas flow of the gas containing HARM structure adjacent the deposition area of ​​the filter. The control system may be arranged to maintain gas flow at the inlet and outlet to the extent necessary to maintain laminar gas flow of the gas containing HARM structure.

[0011] The deposition area of ​​the filter is the area of ​​the filter where the HARM structures from the gas containing the HARM structures are deposited.

[0012] In a first aspect, the apparatus is arranged to form a laminar flow of gas containing the HARM structure adjacent to a deposition area of ​​the filter, the gas flowing along a path at least partially parallel to the filter before passing through the filter. This contributes to the effect of uniform and oriented deposition of the HARM structure on the filter. The HARM structure may be generally oriented in the same direction as the direction of gas flow. The dimensions of the deposition chamber may be preselected to further optimize laminar gas flow.

[0013] The outlet is configured to act as an exhaust and can collect any gases from the deposition chamber, such as gases containing the HARM structure after passing through a filter for deposition.

[0014] The control system may include a controller and a number of pumps and / or controllers configured to keep the flow rate within a predetermined range. The control system may also include a compressed gas container to supply gas to the inlet and gas channels of various shapes for optimal gas flow through the chamber.

[0015] The gas containing the HARM structure may include a carrier gas, which may be any inert gas such as nitrogen, argon, or carbon dioxide.

[0016] According to one embodiment, the control system and the relative positions of the inlet, outlet, top cover, bottom cover and filter are arranged to maintain a laminar gas flow containing the HARM structures proximate the deposition area of ​​the filter at a Reynolds number between 10 and 3500. A gas flow with a Reynolds number between 10 and 3500 has the added effect of depositing the HARM structures in a uniformly oriented manner in the deposition area of ​​the filter. The gas flow remains laminar even at Reynolds numbers in this range.

[0017] In one embodiment, the inlet and outlet are located on opposite sides of the deposition chamber in a horizontal plane. In this embodiment, the gas flow passages extend horizontally across the deposition chamber. This may allow deposition to occur over a larger area of ​​the filter, increasing the deposition area.

[0018] According to one embodiment, the filter extends horizontally and is embedded in the deposition chamber between the top and bottom portions at a predetermined distance from the top and bottom covers of the deposition chamber. The horizontally embedded filter may have one or more deposition areas throughout the area of ​​the deposition chamber. The gas may pass anywhere through the filter depending on the selected parameters, the additional components of the control system, and the physical dimensions of the deposition chamber. This configuration may be desirable in embodiments where a larger deposition area is required or where various additional structural features determine the gas path within the deposition chamber.

[0019] In another embodiment, the device includes a support that surrounds the filter, extends horizontally, and is embedded in the deposition chamber between the upper and lower portions. The support may be any layer of material that is impermeable to gases, thereby limiting the gas path through the filter that it surrounds. The support may then seal the area outside the filter. This seal may form a settling zone in front of the filter along the gas path. In one embodiment, the flow direction of the gas containing the HARM structure is parallel as it passes through the settling zone. This results in an oriented deposition of the HARM structure on the filter after passing through the settling zone. The support may be integral with the filter and may be easily manufactured as a single piece.

[0020] Settling zone herein refers to a zone, eg, preceding the deposition region, where the gas flow becomes stable, laminar, and substantially parallel to the deposition surface.

[0021] According to one embodiment, the apparatus includes a first baffle having at least one lobe extending horizontally and positioned adjacent to the filter such that a gas flow path from the inlet to the outlet passes through a portion of the filter adjacent the at least one lobe of the first baffle. The first baffle may form a settling zone in front of the portion of the filter adjacent the at least one lobe.

[0022] According to a further embodiment, the device includes a second baffle with at least one protrusion, which extends horizontally and is positioned at a distance below the first baffle to form a space between the first and second baffles and between the upper and lower parts of the deposition chamber. The protrusions of the first and second baffles are positioned on opposite sides of the deposition chamber in a horizontal plane. This extends the path length traveled by the gas containing the HARM structures, creating favorable conditions for oriented deposition on a predetermined portion of the filter. The longer path may allow the use of a smaller deposition chamber.

[0023] In embodiments in which the apparatus includes one or more baffles, an advantage is gained in that the baffles may be moved, changed, or removed entirely, thereby allowing for reconfiguration within the deposition chamber.

[0024] In one embodiment, the distance from the top cover of the deposition chamber to the filter is 0.1-10 mm, and the distance from the bottom cover of the deposition chamber to the filter is 5-20 mm. These dimensions may be optimal to form a laminar gas flow at a desired location. The distance from the top cover may refer to the distance from a predetermined point on the top cover if the shape of the top cover is not flat.

[0025] In one embodiment, the filter is a membrane filter, which may have advantages over other filter types in isolating gases from the HARM structure.

[0026] According to one embodiment, the control system is further configured to control the temperature and pressure in the reaction chamber, which can help create conditions favorable for deposition of the HARM structure on the filter.

[0027] In one embodiment, the inlet has a circular cross-sectional shape and a diameter of 5 to 100 millimeters. The circular inlet shape can be suitable for a wide range of gas flow rates at the inlet.

[0028] In an alternative embodiment, the inlet is in the shape of a slit and has a width of 0.5 to 18 millimeters. The slit shape of the inlet can provide improved control over the distribution of the gas containing the HARM structures and therefore the distribution of the HARM structures on the filter.

[0029] According to one embodiment, the deposition chamber has a rectangular shape in a horizontal plane (in a horizontal view), with the inlet and outlet located at opposite corners of the deposition chamber in the horizontal plane. This shape is easy to manufacture and may meet standard requirements. The location of the inlet and outlet over the rectangle distributes the gas and potential deposition area horizontally over most of the space in the chamber. However, deposition chambers of any other shape may be used according to the above embodiment of the invention.

[0030] In one embodiment, the apparatus includes a horizontally extending porous plate with a predetermined pore size located below the filter in the deposition chamber, which may act as an additional baffle of adjustable shape, the shape of which can be changed by blocking or opening some of the pores before or during deposition.

[0031] For purposes of this specification, a HARM structure refers to any microscale or nanoscale structure having a high aspect ratio in one dimension, e.g., selected from the group of carbon nanotube molecules, carbon nanobud molecules, graphene ribbons, carbon or graphite fiber filaments, and silver nanowires.

[0032] In one embodiment, the dimensions of the deposition chamber are 100-200 mm height, 390-1040 mm width, and 515-1240 mm length. These dimensions cover the range of deposition chambers that may be suitable for deposition of HARM structures of various scales.

[0033] According to a second aspect, an apparatus is provided, which may be an apparatus for depositing a HARM structure, an apparatus for oriented deposition of a HARM structure, or an apparatus for oriented deposition of a HARM structure onto a substrate.

[0034] The apparatus includes a deposition chamber, a substrate, an inlet, at least one outlet, and a control system. The deposition chamber is horizontally elongated and includes an upper portion with a horizontally extending top plate and a lower portion with a horizontally extending bottom plate. The plates may have a variety of configurations, may comprise a variety of materials, and are not necessarily solid, but may be made in one piece.

[0035] The substrate is horizontally disposed within the deposition chamber between a top plate and a bottom plate, and in some embodiments, the substrate may be disposed above the bottom plate or at a distance therefrom.

[0036] The inlet is disposed in an upper portion of the deposition chamber and configured to supply gas containing high aspect ratio molecular structures, HARM structures, to the deposition chamber, and the at least one outlet is also disposed in an upper portion of the deposition chamber and configured to withdraw any gas from the deposition chamber, for example gas containing the HARM structures after deposition.

[0037] The control system is configured to control the gas flow at the inlet and at least one outlet, as well as to control the temperature and electrical potential of the top and bottom plates.

[0038] The top plate and the substrate are positioned to form a gap between the top plate and the substrate such that a flow of gas containing the HARM structure from the inlet to the at least one outlet is substantially parallel to the substrate, and the control system is configured to maintain temperature levels of the top plate and the bottom plate sufficiently different to form a temperature gradient adjacent the substrate.

[0039] The control system may also be configured to maintain the electrical potentials of the top and bottom plates at values ​​sufficient to create a uniform electric field adjacent to the substrate.

[0040] The apparatus according to the second aspect is arranged to form a gas flow containing the HARM structure close to the substrate and at least partially parallel to the substrate. This contributes to the effect of uniform and oriented deposition of the HARM structure on the substrate. The HARM structure may be generally oriented in the same direction as the direction of the gas flow. The temperature gradient created by the different temperature levels of the top and bottom plates can provide a drag force (fluid resistance) to the HARM structure, which contributes to deposition. The uniform electric field created by the different potential values ​​of the top and bottom plates can result in electrophoresis leading to the deposition of the HARM structure. The dimensions of the deposition chamber may be preselected to optimize the laminar gas flow.

[0041] As explained in relation to the first embodiment, the terms "upper", "lower", "horizontal" and any other terms indicating geometrical position should not be construed as limiting the apparatus to a particular geometric configuration. These terms are used for clarity only, to facilitate understanding of the overall geometry of the claimed invention, and to describe the interrelationship of the elements of the device.

[0042] The apparatus according to the second aspect may be suitable for deposition on flat substrates in a deposition chamber having substantially flat top and bottom plates. However, the apparatus according to the second aspect may also be suitable for deposition on curved substrates in chambers of various shapes. For example, the apparatus may be used for oriented deposition of HARM structures in drum-like or concave deposition chambers. In some embodiments, the gap between the substrate and the top plate is of a constant height along the deposition chamber.

[0043] In one embodiment of the second aspect, the control system and the relative positions of the inlet, outlet, top plate, bottom plate, and substrate are arranged to maintain the gas flow of the gas containing the HARM structures proximate to the substrate at a laminar flow rate with a Reynolds number between 10 and 3500. The gas flow at a Reynolds number between 10 and 3500 remains laminar, which has the added effect of uniformly oriented deposition of the HARM structures onto the substrate.

[0044] According to one embodiment of this aspect, the apparatus further comprises at least one barrier gas inlet located proximate to said at least one outlet configured to supply a barrier gas into the deposition chamber to prevent the gas comprising the HARM structure from spreading further within the deposition chamber. An inlet with a barrier gas may be useful in embodiments where gas should be prevented from escaping through an outer boundary or from spreading further from the substrate.

[0045] In one embodiment, the inlet is located in a central region of the upper portion of the deposition chamber, and the at least one outlet is located in a peripheral region of the deposition chamber. In an embodiment including one or more barrier gas inlets, the one or more barrier gas inlets may also be located around the periphery of the deposition chamber to prevent the gas containing the HARM structure from spreading further than the outlets located in the peripheral region. A central inlet and peripheral outlet configuration may be desirable for roll-to-roll substrate processing devices, allowing for uniform deposition across the width of the substrate. Devices of this configuration may also be located adjacent to each other in any configuration as needed.

[0046] According to one embodiment, the distance from the top plate to the substrate is 0.5-5 mm, and the distance from the bottom plate to the substrate is 0-5 mm.

[0047] In one embodiment, the control system is arranged to maintain a high temperature level on the top plate and a low temperature level on the lower plate, thereby creating a temperature gradient between the heated and cooled plates.

[0048] In one embodiment, the substrate is a plastic film. The plastic film may be an accessible substrate suitable for oriented deposition of the HARM structure. Any other substrate options are also within the scope of the second aspect.

[0049] In a third aspect of the invention, there is provided a system comprising two or more apparatus of any one of the embodiments of the second aspect arranged adjacent to each other, which may be a system for larger scale deposition of HARM structures.

[0050] According to a fourth aspect, a method for oriented deposition of HARM structures is presented. The method includes supplying a gas containing HARM structures to a deposition chamber via an inlet at a predetermined gas flow rate. The predetermined gas flow rate may be controlled by a control system. The method also includes maintaining a laminar flow of the gas containing HARM structures proximate to a deposition region of a substrate or filter at a Reynolds number between 10 and 3500, the laminar flow of the gas containing HARM structures being at least partially parallel to the substrate or filter. The method further includes depositing the HARM structures from the gas containing HARM structures to the deposition region of the substrate or filter, and withdrawing the remaining gas from the deposition chamber via an outlet at a predetermined gas flow rate.

[0051] The method may be carried out by any suitable apparatus for depositing HARM structures, such as any of the apparatus according to the first and second aspects. The method provides advantageous uniformity and efficiency of oriented deposition of HARM structures due to the surprising effect that laminar gas flow parallel to the substrate or filter has on the deposition result.

[0052] The apparatus and methods of the present invention can be easily integrated into a variety of devices for manufacturing.

[0053] The embodiments of the invention described hereinbefore may be used in any combination with each other. Also, some of the embodiments may be combined together to form further embodiments of the invention. The products, methods or uses to which the invention relates may comprise at least one of the embodiments of the invention described hereinbefore. [Brief description of the drawings]

[0054] The specification will be better understood from the following detailed description read in light of the accompanying drawings.

[0055] [Figure 1] FIG. 1 is a schematic diagram of a device including a filter according to one embodiment. [Diagram 2] FIG. 2 is a schematic diagram of an apparatus including a filter and a baffle according to one embodiment. [Diagram 3] FIG. 3 is a schematic diagram of an apparatus including a filter and two baffles according to one embodiment. [Figure 4] FIG. 4 is a schematic diagram of a device having alternative inlet and outlet locations according to one embodiment. [Figure 5a] FIG. 5a is a schematic diagram of the relative inlet and outlet positions in a horizontal plane. [Figure 5b] FIG. 5b is a schematic diagram of an alternative inlet configuration. [Figure 6] FIG. 6 is a schematic diagram of an apparatus including a substrate according to one embodiment. [Figure 7] FIG. 7 shows an example of an apparatus for deposition on a filter according to one embodiment. [Figure 8] FIG. 8 shows an example of an apparatus for deposition onto a substrate, according to one embodiment. [Figure 9] FIG. 9 is a flow chart illustrating a method according to one embodiment.

[0056] In the accompanying drawings, like reference numerals are used to designate like parts. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0057] In the following, the invention will be explained in more detail together with exemplary embodiments with reference to the accompanying drawings.

[0058] An embodiment of the present invention utilizes an effect that occurs when a laminar flow of gas containing HARM structures moves parallel to the surface of a flat filter before passing through the filter. This effect manifests itself in an oriented deposition of HARM structures on the filter, the orientation of which usually coincides with the direction of the gas flow. A similar effect occurs when depositing directly on a substrate, where a laminar flow of gas containing HARM structures passes parallel to the surface of a flat substrate, resulting in an oriented deposition of HARM structures on the substrate. For deposition on a substrate, a temperature gradient or an electric field can also be used to create conditions for oriented deposition of HARM structures in the deposition chamber.

[0059] The following examples are provided for a better understanding of the invention and should not be construed as limiting.

[0060] 1-3 show schematic diagrams of an apparatus 100 for depositing a HARM structure. The apparatus 100 of FIG. 1 includes a deposition chamber 110 that is horizontally elongated, encloses other elements, and includes an upper portion with a top cover 111 and a lower portion with a bottom cover 112. The top cover 111 includes an inlet 101 disposed in the upper portion and configured to supply gases that include the HARM structure to the deposition chamber 110, and the bottom cover 112 includes an outlet 102 disposed in the lower portion and configured to withdraw gases from the deposition chamber 110.

[0061] The apparatus 100 further includes a filter 103 extending horizontally and separating the upper and lower portions. The filter 103 may be a membrane filter or any other suitable type. The filter 103 includes a deposition region 113, which is illustrated only diagrammatically as an oval and may not have a predetermined location on the filter 103. This deposition region is the area where oriented deposition of the HARM structures occurs and may depend on various factors such as the dimensions of the chamber 110, gas flow rates and other conditions. The approximate gas flow path from the inlet 101 to the outlet 102 is indicated by arrows in Figures 1-3.

[0062] The apparatus 100 of Figure 1, like the apparatus of Figures 2-3, further includes a control system (not shown) configured to control the gas flow at the inlet and outlet. The control system may include a pump, a controller, such as a computer-based controller, for controlling the flow rates at the inlet and outlet, and in some examples, a gas channel of a predetermined shape and a compressed gas reservoir. The control system may be configured to define the characteristics of the gas prior to supplying these to the chamber and / or to adjust the flow rate, temperature, or any other characteristics of the gas during deposition.

[0063] The deposition region 113 may coincide with the region of the filter 103 through which gas passes through the filter 103. A gas flow path of the gas containing the HARM structure is formed by the arrangement of the inlet 101, outlet 102, and filter 103, and is shown approximately by the arrows. The direction of flow of the gas stream containing the HARM structure proximate the deposition region 113 of the filter is at least partially parallel to the filter 103. The control system and the relative positions of the inlet 101, outlet 102, top cover 111, bottom cover 112, and filter 103 are arranged to maintain a laminar gas flow of the gas containing the HARM structure proximate the deposition region of the filter. A laminar gas flow having a direction at least partially parallel to the filter 103 proximate the deposition region 113 results in an oriented deposition of the HARM structure on the filter 103. In particular, a laminar gas flow of the gas containing the HARM structure having a Reynolds number in the range of 10 to 3500 has been shown to provide efficient oriented deposition.

[0064] The apparatus 100, 200, 300 of Figures 1-3 are also shown with a gap 106 between the filter and the top cover 111, the size of which, in combination with parameters such as gas flow rate, may further contribute to laminar gas flow over the filter 103. The inlet 101 and outlet 102 are positioned horizontally on opposite sides of the deposition chamber 110 in these examples. This facilitates control of the direction of gas flow. Alternatively, the inlet 101 and outlet 102 may be positioned close to each other in a horizontal plane, and a gas flow path that is at least partially parallel to the filter may be formed by other means as described herein.

[0065] The filter 103 in Figures 1-3 extends horizontally and is embedded in the deposition chamber 110 between the upper and lower parts at a predetermined position. In other examples, the filter 103 may be surrounded by a support element or the filter 103 may be located in the deposition chamber 110 with a distance between the horizontal ends (edges) of the filter 103 and the side walls of the chamber 110. An arrangement in which the filter 103 is not embedded in the deposition chamber 110 may be cheaper to manufacture and / or beneficial if additional exhausts are provided on the side walls of the deposition chamber 110. The additional exhausts or outlets may also affect the direction of the gas flow.

[0066] A portion of the filter 103 may be surrounded by a support (not shown), so that the gas containing the HARM structure may physically pass only through the portion not surrounded by the support. The support may extend horizontally and be embedded in the deposition chamber 110, in which case the filter is, for example, a protrusion in the support. The gas impermeable support may form a settling zone before the gas flow path passes through the filter 103.

[0067] 2 shows an example where the apparatus 200 includes a baffle 204 with at least one protrusion. The baffle 204 extends horizontally and is positioned adjacent to the filter 103 such that the gas flow path from the inlet 101 towards the outlet 102 passes through a portion of the filter 103 adjacent to the at least one protrusion of the baffle 204. The baffle 204 also forms a settling zone before the deposition region 113, approximately shown as an oval. In this settling zone, the gas flow may become stable, laminar and parallel to the filter 103, thereby providing conditions for oriented deposition of HARM structures as the gas passes through the settling zone and enters the deposition region 113.

[0068] The apparatus 200 of FIG. 2 additionally includes a porous plate 205. The porous plate 205 may have a predetermined pore diameter (pore size), extend horizontally, and be positioned below the filter 103 in the deposition chamber 110. The porous plate 205 may act as an additional baffle of adjustable shape that changes shape when some of the pores are blocked or opened. The porous plate 205 is shown in FIG. 2 for illustrative purposes only and may be used in any of the apparatuses shown in the other examples.

[0069] FIG. 3 shows a schematic of an embodiment of an apparatus 300 including two baffles 204, 304. The first baffle 204 may be arranged similarly to the baffle 204 in the previous example. The second baffle 304 also includes at least one protrusion and extends horizontally. The second baffle 304 is arranged at a distance below the first baffle 204, forming a space between them and between the upper and lower portions of the deposition chamber. The protrusions of the first and second baffles are arranged on opposite sides (opposite sides) of the deposition chamber 110 in a horizontal plane. This extends the path length traveled by the gas containing the HARM structure, as depicted by the arrows. The increased path length may allow a smaller deposition chamber 110 to be used.

[0070] In one embodiment, the dimensions of the elements disposed in the deposition chamber 110 are as follows: the distance from the top cover 111 of the deposition chamber 110 to the filter 103 is 0.1-10 mm, and the distance from the bottom cover 112 of the deposition chamber 110 to the filter 103 is 5-20 mm.

[0071] FIG. 4 shows an embodiment of the device 400 in which the length of the inlet 401 and outlet 402 are extended and positioned along the wall of the deposition chamber 410. FIG. 4 shows a schematic top view of the device with a filter (not shown). The outlet 402 is positioned opposite the filter in a vertical plane (not visible in the top view of FIG. 4). In this example, the gas containing the HARM structure spreads in a horizontal plane inside the deposition chamber 410, which can be divided roughly into various zones along the path of the gas flow. The settling zone 420 is the zone where the gas flow of the gas containing the HARM structure becomes laminar and parallel to the deposition surface before entering the deposition area 413. Sides 421, also called sacrificial zones, may be excluded from the deposition area 413 because they are less favorable for oriented deposition.

[0072] An embodiment with alternative locations of the inlet and outlet is shown in Figures 5a-5b. The inlet 501 and outlet 502 in Figure 5a are located at opposite corners of the deposition chamber. The inlet 501 is circular in shape and has a diameter of 5-25 millimeters. The circular shape can be suitable for a wide range of gas flow rates at the inlet 501.

[0073] The inlet 511 depicted in Figure 5b is in the shape of a slit and has a width of 0.5 to 18 millimeters. The slit shape of the inlet 511 can have the effect of improving control over the distribution of the gas containing the HARM structures and therefore the distribution of the HARM structures on the filter. In the example depicted in Figure 4, the inlet 401 can also be slit-shaped.

[0074] Other shapes of inlets, outlets and deposition chambers may be used within the scope of the invention, and the locations of the inlets and outlets may vary.

[0075] Another embodiment of the apparatus is shown in FIG. 6. The apparatus 600 is designed for oriented deposition of HARM structures on a substrate, as opposed to a filter as shown in FIGS. 1-3. The apparatus 600 includes a horizontally elongated deposition chamber 610, including an upper portion with a horizontally extending top plate 611 and a lower portion with a horizontally extending bottom plate 612. The apparatus 600 shown in FIG. 6 includes a substrate 603 horizontally disposed between the top plate 611 and the bottom plate 612 in the deposition chamber 610. The substrate 603 may be a plastic film or any other suitable substrate. An inlet 601 disposed in the upper portion of the deposition chamber 610 and penetrating the top plate 611 is configured to supply gas containing the HARM structures into the deposition chamber 610. An outlet 602 is also disposed in the upper portion of the deposition chamber 610 and penetrating the top plate 611. The apparatus may have one or more outlets 602, and includes two in the embodiment of FIG. 6. The outlet 602 is configured to withdraw gas from the deposition chamber.

[0076] The apparatus 600 also includes a control system (not shown) configured to control the gas flow at the inlet 601 and outlet 602, as well as the temperature and electrical potential of the top plate 611 and bottom plate 612. The control system may include pumps and controllers for controlling the flow rates at the inlet 601 and outlet 602, and in some examples may include shaped gas channels and compressed gas reservoirs. The control system may include a computer-based controller. The control system may be configured to define the characteristics of the gas prior to supplying it to the chamber and / or to adjust the flow rate, temperature, electrical potential of the plates 611, 612, or any other characteristics of the gas during deposition.

[0077] The top plate 611 and the substrate 603 are arranged such that a gap is formed between the top plate 611 and the substrate 603 such that the flow of gas containing the HARM structures from the inlet 601 towards the outlet 602 is substantially parallel to the substrate 603 in the deposition region 613 (only approximately illustrated as an oval). The control system is configured to maintain different temperature levels on the top plate 611 and the bottom plate 612 to create a temperature gradient in proximity to the substrate 603. The temperature gradient created by the different temperature levels on the top plate 611 and the bottom plate 612 can exert a drag force on the HARM structures, thereby creating conditions for oriented deposition. In addition to or instead of maintaining the temperature levels, the control system can also be configured to maintain the electrical potential of the top plate 611 and the bottom plate 612 at a value sufficient to create a uniform electric field in proximity to the substrate 603. The uniform electric field creates conditions for electrophoresis leading to the deposition of the HARM structures on the substrate 603.

[0078] To maintain the gas flow laminar under various conditions, thereby enhancing the effect of oriented deposition of the HARM structures in the deposition region 613, the above control system and the relative positions of the inlet 601, outlet 602, top plate 611, bottom plate 612 and substrate 603 can be arranged to maintain the gas flow of the gas containing the HARM structures adjacent to the substrate 603 laminar with a Reynolds number of 10-3500.

[0079] The apparatus 600 shown in Figure 6 also includes an optional barrier gas inlet 620 located proximate to the outlet 602. The barrier gas inlet 620 is configured to supply a barrier gas into the deposition chamber 610 to prevent the gases containing the HARM structure from spreading further within the deposition chamber 610. In the embodiment shown in Figure 6, the inlet 601 is located in a central region of the upper portion of the deposition chamber 610, and the outlet 602 and the barrier gas inlet 620 are located in a peripheral region of the deposition chamber 610. The barrier gas may be nitrogen, argon, carbon monoxide, CO2, or any inert gas or filterable gas composition.

[0080] In an exemplary embodiment, the distance from the top plate 611 to the substrate 603 is 0.5-5 millimeters, and the distance from the bottom plate 612 to the substrate 603 is 0-5 millimeters. The top plate 611 may be heated and the bottom plate 612 may be cooled to create a temperature gradient.

[0081] Two or more apparatuses 600 as shown in Figure 6 may be positioned adjacent to one another to create a system that may have a substrate passing through multiple apparatuses 600 positioned adjacent to one another.

[0082] The apparatus 600 is shown in FIG. 6 as having substantially flat top and bottom plates 611, 612 and a substrate 603. However, the apparatus 600 according to this embodiment may also be suitable for deposition in chambers of various shapes on curved substrates. For example, the apparatus 600 may be used for oriented deposition of HARM structures in a drum-like or concave deposition chamber.

[0083] FIG. 7 shows an example of an apparatus 700 according to an embodiment of the first aspect. The apparatus 700 includes an inlet 701 and an outlet 701 connected to a deposition chamber 710. The inlet 701 is located at the top of the chamber 710, and the outlet 702 is located at the bottom. The inlet 701 and the outlet 702 are cone-shaped in this example. The apparatus 700 further includes a filter 703 located at 0-10 mm from the top, and a porous plate 713 with holes. The porous plate 713 may be used as a baffle with adjustable protrusion size to control gas diffusion in the chamber 710. The deposition chamber 710 may also include one or more baffles that direct the gas flow path from the inlet 701 on the left side of the chamber 710 shown in FIG. 7 to the porous plate 713. The dimensions in this figure are approximate and may not reflect the actual relative sizes of the elements of the apparatus 700.

[0084] FIG. 8 shows an example of an apparatus 800 according to an embodiment of the second aspect. The apparatus 800 includes a heated top plate 811, a cooled bottom plate 812, and a deposition chamber therebetween (not shown, a thin gap between the top plate 811 and the bottom plate 812). The apparatus 800 also includes a substrate 803 disposed on the bottom plate 812. Furthermore, the apparatus includes a central inlet 801 and two outlets 802 connected to peripheral positions of the deposition chamber. The apparatus 800 also includes a barrier gas inlet 820 connected to a peripheral position to prevent gas from passing through the outlets 802. The dimensions in FIG. 8 are approximate and may not reflect the actual relative sizes of the elements of the apparatus 700.

[0085] FIG. 9 is a flow chart of a method for oriented deposition of HARM structures according to one embodiment. The method includes step 901 of supplying a gas containing the HARM structures to a deposition chamber via an inlet at a predetermined gas flow rate. The gas flow rate may be determined by a control unit. The method further includes step 902 of maintaining a laminar flow of the gas containing the HARM structures proximate to a deposition region of a substrate or filter at a Reynolds number between 10 and 3500. The laminar flow of the gas containing the HARM structures in step 902 is at least partially parallel to the substrate or filter. The laminar gas flow may be maintained by a control system in combination with the relative positions of the inlet, outlet, and other elements in the deposition chamber. Once the laminar gas flow is maintained at the appropriate conditions in 902, the method further includes step 903 of depositing the HARM structures from the gas containing the HARM structures on the deposition region of the substrate or filter. Deposition 903 occurs when the laminar and substantially parallel gas flow reaches the deposition region of the filter or substrate. The method then includes withdrawing the remaining gas from the deposition chamber via an outlet at a predetermined gas flow rate 904. The predetermined flow rate and laminar gas flow allows for oriented deposition of the HARM structure.

[0086] The method may be carried out by any suitable apparatus for depositing HARM structures, such as any of the apparatus according to the first and second aspects. The method may also be carried out by a control system including a computer. The method provides advantageous uniformity and efficiency of oriented deposition of HARM structures due to the surprising effect that laminar gas flow parallel to the substrate or filter has on the deposition result. EXAMPLES

[0087] An apparatus for oriented deposition of HARM structures on a filter, which is an example of the first embodiment described above, comprises a deposition chamber of 160×390×515 mm (height×width×length). The flow rate of gas is maintained at 20-50 liters / min, and the temperature in the chamber is 20-80° C. The gas supplied from the inlet is nitrogen, a carrier gas containing carbon nanobuds. A membrane filter is embedded in the deposition chamber between the upper and lower parts at a distance of 0.5-2 mm from the upper part. The membrane filter collects the carbon nanobuds in a deposition area of ​​about 150×420 mm. The orientation of the carbon nanobuds deposited under the above conditions can be estimated by the orientation index (the ratio of the maximum resistance value to the minimum resistance value) being in the range of 1.3-2.2. The apparatus further comprises a baffle with a protrusion disposed below the filter, which forms a settling zone and has a size of about 150×420 mm.

[0088] As is clear to a person skilled in the art, the invention is not limited to the examples described above, but embodiments can vary freely within the scope of the claims.

Claims

1. An apparatus comprising: a horizontally elongated deposition chamber including an upper portion with a top cover and a lower portion with a bottom cover; a filter disposed horizontally within the deposition chamber to separate the upper and lower portions, the filter including a deposition region; an inlet disposed in the upper portion of the deposition chamber and configured to supply a gas containing high aspect ratio molecular structures, HARM structures, selected from the group consisting of carbon nanotube molecules, carbon nanobud molecules, graphene ribbons, carbon or graphite fiber filaments, and silver nanowires, to the deposition chamber; an outlet disposed in the lower portion of the deposition chamber and configured to withdraw gas from the deposition chamber; a control system configured to control gas flow at the inlet and the outlet; Including, the inlet, the outlet and the filter are arranged to define a gas flow path for the gas containing HARM-structures passing through the filter from the inlet in the upper portion to the outlet in the lower portion, the direction of flow of the gas containing HARM-structures proximate the deposition region of the filter being at least partially parallel to the filter; An apparatus wherein the control system and the relative positions of the inlet, the outlet, the top cover, the bottom cover and the filter are arranged to maintain a laminar gas flow of the gas including the HARM structure adjacent the deposition area of ​​the filter.

2. 2. The apparatus of claim 1, wherein said control system and the relative positions of said inlet, said outlet, said top cover, said bottom cover and said filter are arranged to maintain a laminar gas flow Reynolds number of said gas containing HARM-structures adjacent said deposition area of ​​said filter between 10 and 3500.

3. 3. The apparatus of claim 1 or claim 2, wherein the inlet and the outlet are disposed on opposite sides of the deposition chamber in a horizontal plane.

4. 4. The apparatus of claim 1, wherein the filter extends horizontally and is embedded in the deposition chamber between the upper and lower portions at a predetermined distance from the top and bottom covers of the deposition chamber.

5. 4. The apparatus of claim 1, further comprising a support surrounding the filter, extending horizontally and embedded in the deposition chamber between the upper and lower portions.

6. 6. The apparatus of claim 1, further comprising a first baffle having at least one opening, the first baffle extending horizontally and positioned adjacent to the filter such that the gas flow path from the inlet to the outlet passes through a portion of the filter adjacent the at least one opening in the first baffle.

7. a second baffle having at least one opening; the second baffle extends horizontally and is positioned a predetermined distance below the first baffle to define a space between the first and second baffles and between an upper and lower portion of the deposition chamber; 7. The apparatus of claim 6, wherein the openings in the first baffle and the second baffle are disposed on opposite sides of the deposition chamber in a horizontal plane of the deposition chamber.

8. 8. The apparatus of claim 1, wherein the distance from the top cover of the deposition chamber to the filter is between 0.1 and 10 millimeters, and the distance from the bottom cover of the deposition chamber to the filter is between 5 and 20 millimeters.

9. 9. The device according to any one of claims 1 to 8, wherein the filter is a membrane filter.

10. The apparatus of claim 1 , wherein the control system is further configured to control a temperature and a pressure in the deposition chamber.

11. An apparatus according to any preceding claim, wherein the inlet is circular in cross section and has a diameter of between 5 and 100 millimetres.

12. An apparatus according to any one of claims 1 to 10, wherein the inlet is in the shape of a slit and has a width of between 0.5 and 18 mm.

13. 13. The apparatus of claim 1, wherein the deposition chamber has a rectangular shape in a horizontal plane, and the inlet and outlet are located at opposite corners of the deposition chamber in the horizontal plane.

14. 14. The apparatus of claim 1, further comprising a horizontally extending porous plate having a predetermined pore size positioned within the deposition chamber below the filter.

15. 15. The device according to any one of claims 1 to 14, wherein the HARM-structure is selected from the group consisting of carbon nanotube molecules, carbon nanobud molecules, graphene ribbons, carbon or graphite fibre filaments, and silver nanowires.

16. An apparatus according to any one of the preceding claims, wherein the deposition chamber has dimensions of height 100-200mm, width 390-1040mm and length 515-1240mm.

17. An apparatus comprising: a deposition chamber elongated horizontally and including an upper portion having a horizontally extending top plate and a lower portion having a horizontally extending bottom plate; a substrate disposed horizontally between a top plate and the bottom plate within the deposition chamber; an inlet disposed in the upper portion of the deposition chamber and configured to supply a gas containing high aspect ratio molecular structures, HARM structures, selected from the group consisting of carbon nanotube molecules, carbon nanobud molecules, graphene ribbons, carbon or graphite fiber filaments, and silver nanowires, to the deposition chamber; at least one outlet disposed in the upper portion of the deposition chamber and configured to withdraw gas from the deposition chamber; a control system configured to control gas flow at the inlet and at least one outlet, as well as the temperature and electrical potential of the top plate and the bottom plate; Including, said top plate and said substrate are arranged to define a gap between said top plate and said substrate such that the flow of said gas containing HARM-structures from said inlet to said at least one outlet is substantially parallel to said substrate; The control system includes: maintaining the temperatures of the top plate and the bottom plate at levels sufficiently different to create a temperature gradient adjacent the substrate; and / or maintaining the electrical potentials of the top and bottom plates at values ​​sufficient to create a uniform electric field adjacent to the substrate; The device is configured to: The apparatus wherein said control system and the relative positions of said inlet, said outlet, said top plate, said bottom plate and said substrate are arranged to maintain a laminar gas flow of said gas containing HARM-structures adjacent to said substrate at a Reynolds number of between 10 and 3500.

18. 20. The apparatus of claim 17, further comprising at least one barrier gas inlet positioned proximate to said at least one outlet configured to supply a barrier gas into said deposition chamber to prevent said gas containing HARM-structures from spreading further within said deposition chamber.

19. 19. Apparatus according to any one of claims 17 to 18, wherein the inlet is located in a central region of the upper portion of the deposition chamber and the at least one outlet is located in a peripheral region of the deposition chamber.

20. 20. The apparatus of any one of claims 17 to 19, wherein the distance from the top plate to the substrate is 0.5 to 5 mm and the distance from the bottom plate to the substrate is 0 to 5 mm.

21. 21. The device according to any one of claims 17 to 20, wherein the substrate is a plastic film.

22. 22. A system comprising two or more devices according to any one of claims 17 to 21 arranged adjacent to each other.

23. A method for oriented deposition of high aspect ratio molecular structures, HARM structures, selected from the group consisting of carbon nanotube molecules, carbon nanobud molecules, graphene ribbons, carbon or graphite fiber filaments, and silver nanowires. supplying a gas containing HARM-structures through an inlet into a deposition chamber at a predetermined gas flow rate; maintaining a laminar flow of said gas containing HARM structures adjacent to a deposition area of ​​a substrate or filter at a Reynolds number of 10 to 3500, said laminar flow of said gas containing HARM structures being at least partially parallel to said substrate or said filter; depositing HARM-structures from the gas containing HARM-structures onto the deposition area of ​​the substrate or filter; withdrawing remaining gas from the deposition chamber via an outlet at a predetermined gas flow rate; The method includes:

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