Power semiconductor module, its manufacturing method, and power conversion device

Abstract

To provide a power semiconductor module that enables various types of external connection terminals to be easily connected with a plurality of terminal parts of a lead frame.SOLUTION: A power semiconductor module 1 comprises a lead frame 10, at least one power semiconductor chip 20, a plurality of external connection terminals 30, and an encapsulation member 42. The lead frame 10 includes a plurality of terminal parts 13. The plurality of terminal parts 13 respectively include a plurality of portions 13a exposed from the encapsulation member 42. The plurality of external connection terminals 30 respectively include a plurality of pairs of holding pieces 32. The plurality of pairs of holding pieces 32 respectively hold the plurality of portions 13a of the plurality of terminal parts 13.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a power semiconductor module, a manufacturing method thereof, and a power conversion device. [Background technology]

[0002] International Publication No. WO 2013 / 171946 (Patent Document 1) discloses a semiconductor device including a case and a package. The case includes a resin frame and a plurality of first terminals. The package includes a lead frame, a power semiconductor element mounted on the lead frame, a molding resin that encapsulates the power semiconductor element, and a plurality of second terminals connected to the lead frame. The plurality of second terminals of the package are electrically connected to the plurality of first terminals of the case using a joining material such as solder or ultrasonic bonding. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2013 / 171946 Summary of the Invention [Problem to be solved by the invention]

[0004] In the semiconductor device described in Patent Document 1, the second terminals of the package are joined to the first terminals of the case using a joining material such as solder or ultrasonic joining. Therefore, a complicated operation is required to electrically connect the second terminals to the first terminals. The present disclosure has been made in consideration of the above-mentioned problems, and has an object to provide a power semiconductor module in which various types of external connection terminals can be easily connected to the terminal portions of the lead frame, a manufacturing method thereof, and a power conversion device. [Means for solving the problem]

[0005] The power semiconductor module of the present disclosure includes a lead frame, at least one power semiconductor chip, a plurality of external connection terminals, and a sealing member. The lead frame includes at least one die pad portion and a plurality of terminal portions. The plurality of external connection terminals are respectively connected to the plurality of terminal portions. The sealing member seals the at least one power semiconductor chip. The lead frame has a first main surface and a second main surface opposite to the first main surface. The at least one power semiconductor chip is mounted on the first main surface of the at least one die pad portion and is electrically connected to the plurality of terminal portions. Each of the plurality of terminal portions includes a plurality of portions exposed from the sealing member. Each of the plurality of external connection terminals includes a plurality of pairs of clamping pieces. Each of the plurality of pairs of clamping pieces clamps a plurality of portions of the plurality of terminal portions.

[0006] The manufacturing method of the power semiconductor module of the present disclosure includes mounting at least one power semiconductor chip on at least one die pad portion of a lead frame. The lead frame includes at least one die pad portion and a plurality of terminal portions. The lead frame has a first main surface and a second main surface opposite to the first main surface. The at least one power semiconductor chip is mounted on the first main surface of the at least one die pad portion and is electrically connected to the plurality of terminal portions. The manufacturing method of the power semiconductor module of the present disclosure includes sealing the at least one power semiconductor chip with a sealing member. Each of the plurality of terminal portions includes a plurality of portions exposed from the sealing member. The manufacturing method of the power semiconductor module of the present disclosure includes connecting a plurality of external connection terminals to the plurality of terminal portions, respectively, by a plurality of pairs of clamping pieces clamping a plurality of portions of the plurality of terminal portions. Each of the plurality of external connection terminals includes a plurality of pairs of clamping pieces.

[0007] The power conversion device of the present disclosure includes a main conversion circuit and a control circuit. The main conversion circuit has the power semiconductor module of the present disclosure and is configured to convert and output input power. The control circuit is configured to output a control signal for controlling the main conversion circuit to the main conversion circuit. Effect of the Invention

[0008] In the power semiconductor module and power conversion device of the present disclosure, the multiple pairs of clamping pieces of the multiple external connection terminals clamp multiple portions of the multiple terminal portions, respectively. According to the power semiconductor module and power conversion device of the present disclosure, various types of external connection terminals can be easily connected to the multiple terminal portions of the lead frame.

[0009] In the method for manufacturing a power semiconductor module according to the present disclosure, a plurality of pairs of clamping pieces of a plurality of external connection terminals clamp a plurality of portions of a plurality of terminal portions. According to the method for manufacturing a power semiconductor module according to the present disclosure, various types of external connection terminals can be easily connected to the plurality of terminal portions of the lead frame. [Brief description of the drawings]

[0010] [Figure 1] 1 is a schematic plan view of a power semiconductor module according to a first embodiment. [Diagram 2] 2 is a schematic cross-sectional view of a region II shown in FIG. 1 of the power semiconductor module according to the first embodiment. [Diagram 3] 2 is a schematic partial enlarged perspective view of an external connection terminal and an insulating member included in the power semiconductor module of the first embodiment. FIG. [Figure 4] 13 is a schematic partially enlarged perspective view showing another example of an external connection terminal and an insulating member. FIG. [Diagram 5] 3 is a schematic cross-sectional view showing a step of a method for manufacturing the power semiconductor module according to the first embodiment. FIG. [Figure 6] 7 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 6 in the method for manufacturing the power semiconductor module according to the first embodiment. [Figure 7] 7 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 6 in the method for manufacturing the power semiconductor module according to the first embodiment. [Figure 8] 8 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 7 in the method for manufacturing the power semiconductor module according to the first embodiment. [Figure 9] 9 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 8 in the method for manufacturing the power semiconductor module according to the first embodiment. [Figure 10] 4 is a schematic partially enlarged perspective view of an external connection terminal and an insulating member in the manufacturing method of the power semiconductor module according to the first embodiment. FIG. [Figure 11] 13 is a schematic partially enlarged perspective view showing another example of an external connection terminal and an insulating member. FIG. [Figure 12] 10 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 9 in the method for manufacturing the power semiconductor module according to the first embodiment. [Figure 13] FIG. 4 is a schematic cross-sectional view of a power semiconductor module according to a modified example of the first embodiment. [Figure 14] FIG. 11 is a schematic plan view of a power semiconductor module according to a second embodiment. [Figure 15] 11 is a schematic partial enlarged perspective view of an external connection terminal and an insulating member included in the power semiconductor module of the second embodiment. FIG. [Figure 16] FIG. 11 is a schematic cross-sectional view of a power semiconductor module according to a third embodiment. [Figure 17] FIG. 11 is a schematic cross-sectional view of a power semiconductor module according to a fourth embodiment. [Figure 18] FIG. 11 is a schematic cross-sectional view of a power semiconductor module according to a fifth embodiment. [Figure 19] FIG. 13 is a schematic cross-sectional view of a power semiconductor module according to a sixth embodiment. [Figure 20] FIG. 23 is a schematic cross-sectional view of a power semiconductor module according to a modified example of the sixth embodiment. [Figure 21] FIG. 13 is a block diagram showing a configuration of a power conversion system according to a seventh embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, embodiments of the present disclosure will be described. Note that the same reference numerals are used to refer to the same components, and the description thereof will not be repeated.

[0012] Embodiment 1 A power semiconductor module 1 according to a first embodiment will be described with reference to Fig. 1 to Fig. 3. The power semiconductor module 1 mainly includes a lead frame 10, at least one power semiconductor chip 20, a plurality of external connection terminals 30, and a sealing member 42. The power semiconductor module 1 may further include at least one control semiconductor chip 23. The power semiconductor module 1 may further include an insulating member 38. The power semiconductor module 1 may further include a heat dissipation sheet 40.

[0013] The lead frame 10 has a first main surface 10a and a second main surface 10b opposite to the first main surface 10a. The first main surface 10a and the second main surface 10b extend in the x direction and the y direction, respectively. The lead frame 10 is made of a conductive material. The lead frame 10 is made of a metal such as copper, aluminum, or an alloy of copper and aluminum. A plating film made of nickel or silver may be applied to the surface of the lead frame 10 including the first main surface 10a and the second main surface 10b. The plating film prevents the lead frame 10 from being oxidized.

[0014] The lead frame 10 includes at least one die pad portion 11. Specifically, the lead frame 10 may include a plurality of die pad portions 11. The lead frame 10 may further include at least one die pad portion 12. Specifically, the lead frame 10 may include a plurality of die pad portions 12. The lead frame 10 further includes a plurality of terminal portions 13. The plurality of terminal portions 13 are arranged along the y direction. Each of the plurality of terminal portions 13 includes a plurality of portions 13a exposed from the sealing member 42. The lead frame 10 further includes a plurality of terminal portions 14. The plurality of terminal portions 14 are arranged along the y direction. Each of the plurality of terminal portions 14 includes a plurality of portions 14a exposed from the sealing member 42.

[0015] At least one power semiconductor chip 20 is, for example, an insulated gate bipolar transistor (IGBT), a metal oxide semiconductor field effect transistor (MOSFET), or a diode. At least one power semiconductor chip 20 is formed of a semiconductor material such as, for example, silicon (Si), silicon carbide (SiC), or gallium nitride (GaN). At least one power semiconductor chip 20 is mounted on the first main surface 10a of at least one die pad portion 11 by using, for example, a bonding member 21. The bonding member 21 may be, for example, a solder, a conductive adhesive, or a metal fine particle sintered body such as a silver fine particle sintered body or a copper fine particle sintered body. At least one power semiconductor chip 20 is electrically connected to a plurality of terminal portions 13. For example, at least one power semiconductor chip 20 is electrically connected to a plurality of terminal portions 13 by using a plurality of conductive wires 26.

[0016] Specifically, the at least one power semiconductor chip 20 may be a plurality of power semiconductor chips 20. The plurality of power semiconductor chips 20 may be mounted on the first main surfaces 10a of the plurality of die pad portions 11. The plurality of power semiconductor chips 20 are electrically connected to the plurality of terminal portions 13, respectively. For example, the plurality of power semiconductor chips 20 are electrically connected to the plurality of terminal portions 13, respectively, using a plurality of conductive wires 26.

[0017] The at least one control semiconductor chip 23 controls the at least one power semiconductor chip 20. The at least one control semiconductor chip 23 may, for example, control a gate voltage of the at least one power semiconductor chip 20. The power semiconductor module 1 is, for example, an intelligent power module (IPM) incorporating at least one power semiconductor chip 20 and at least one control semiconductor chip 23 that controls the at least one power semiconductor chip 20.

[0018] At least one control semiconductor chip 23 is formed of a semiconductor material such as silicon (Si). At least one control semiconductor chip 23 is mounted on the first main surface 10a of at least one die pad portion 12 using, for example, a bonding member 24. The bonding member 24 may be, for example, solder, a conductive adhesive, or a metal fine particle sintered body such as a silver fine particle sintered body or a copper fine particle sintered body. At least one control semiconductor chip 23 is electrically connected to a plurality of terminal portions 14. For example, at least one control semiconductor chip 23 is electrically connected to a plurality of terminal portions 14 using a plurality of conductive wires 28.

[0019] Specifically, the at least one control semiconductor chip 23 may be a plurality of control semiconductor chips 23. The plurality of control semiconductor chips 23 may be mounted on the first main surfaces 10a of the plurality of die pad portions 12. The plurality of control semiconductor chips 23 are electrically connected to the plurality of terminal portions 14, respectively. For example, the plurality of control semiconductor chips 23 are electrically connected to the plurality of terminal portions 14, respectively, using a plurality of conductive wires 28.

[0020] At least one control semiconductor chip 23 is electrically connected to at least one power semiconductor chip 20. For example, the at least one control semiconductor chip 23 is electrically connected to at least one power semiconductor chip 20 using at least one conductive wire 27. Specifically, the multiple control semiconductor chips 23 are electrically connected to the multiple power semiconductor chips 20, respectively. For example, the multiple control semiconductor chips 23 are electrically connected to the multiple power semiconductor chips 20, respectively, using the multiple conductive wires 27.

[0021] The conductive wires 26, 27, 28 are formed of a conductive material. The conductive wires 26, 27, 28 may be formed of a metal such as aluminum, copper, gold, or silver. The plurality of conductive wires 26 are bonded to at least one power semiconductor chip 20 and the plurality of terminal portions 13. The at least one conductive wire 27 is bonded to at least one power semiconductor chip 20 and at least one control semiconductor chip 23. The plurality of conductive wires 28 are bonded to at least one control semiconductor chip 23 and the plurality of terminal portions 14.

[0022] The sealing member 42 seals at least one power semiconductor chip 20 and at least one control semiconductor chip 23. The sealing member 42 may further seal at least one die pad portion 11 and at least one die pad portion 12. The sealing member 42 may further seal a part of the plurality of terminal portions 13 and a part of the plurality of terminal portions 14. The sealing member 42 may further seal the conductive wires 26, 27, and 28. The sealing member 42 may further seal a part of the heat dissipation sheet 40. The sealing member 42 has electrical insulation properties. The sealing member 42 may be a mold resin. The sealing member 42 is formed of a resin material such as, for example, an epoxy resin.

[0023] The plurality of external connection terminals 30 are formed of a conductive material. The plurality of external connection terminals 30 are formed of a metal such as copper or aluminum. The plurality of external connection terminals 30 are arranged along the y direction. The plurality of external connection terminals 30 are connected to the plurality of terminal portions 13, respectively. Specifically, the plurality of external connection terminals 30 are connected to the plurality of portions 13a of the plurality of terminal portions 13, respectively. The plurality of external connection terminals 30 are connected to the plurality of terminal portions 14, respectively. Specifically, the plurality of external connection terminals 30 are connected to the plurality of portions 14a of the plurality of terminal portions 14, respectively. A plating film formed of nickel or tin may be applied to the surface of the plurality of external connection terminals 30. The plating film prevents the plurality of external connection terminals 30 from being oxidized. The plating film reduces the contact resistance between the terminal portions 13, 14 of the lead frame 10 and the plurality of external connection terminals 30.

[0024] Each of the multiple external connection terminals 30 includes multiple external connection terminal body portions 31 and multiple pairs of clamping pieces 32. The multiple external connection terminal body portions 31 are connected to the multiple pairs of clamping pieces 32. The multiple external connection terminal body portions 31 extend, for example, along a normal line (z direction) of the first main surface 10a. The power semiconductor module 1 has a dual in-line package (DIP) structure.

[0025] Each of the multiple pairs of clamping pieces 32 is provided, for example, at one end of each of the multiple external connection terminals 30 (multiple external connection terminal main bodies 31). The multiple pairs of clamping pieces 32 clamp the multiple portions 13a of the multiple terminal portions 13, respectively. Specifically, the multiple pairs of clamping pieces 32 are crimped to the multiple portions 13a of the multiple terminal portions 13, respectively. The multiple pairs of clamping pieces 32 clamp the multiple portions 14a of the multiple terminal portions 14, respectively. Specifically, the multiple pairs of clamping pieces 32 are crimped to the multiple portions 14a of the multiple terminal portions 14, respectively.

[0026] When mounting the power semiconductor module 1 on a printed circuit board (not shown), the other end of each of the plurality of external connection terminals 30 (the plurality of external connection terminal body parts 31) opposite to one end of each of the plurality of external connection terminals 30 (the plurality of external connection terminal body parts 31) is joined to the printed circuit board. The type of the plurality of external connection terminals 30 is changed according to the type of the printed circuit board. For example, the plurality of external connection terminals 30 of the type shown in FIG. 3 may be used, or the plurality of external connection terminals 30 of the type shown in FIG. 4 may be used according to the type of the printed circuit board. The other end of each of the plurality of external connection terminals 30 of the type shown in FIG. 3 has, for example, a straight shape. The other end of each of the plurality of external connection terminals 30 of the type shown in FIG. 4 is, for example, a press-fit terminal.

[0027] The insulating member 38 is provided between the external connection terminals 30, and electrically insulates the external connection terminals 30 from each other. The insulating member 38 is, for example, an insulating case that houses some of the external connection terminals 30. The insulating member 38 may be integrated with the external connection terminals 30. The insulating member 38 may be a resin molded product. The insulating member 38 is formed of, for example, an insulating resin such as polyphenylene sulfide (PPS) or soft rubber. The insulating member 38 is in contact with the sealing member 42. The insulating member 38 covers the surface 30m of the external connection terminals 30 that is close to the second main surface 10b of the lead frame 10 (terminal portion 14).

[0028] The heat dissipation sheet 40 is formed of an insulating material having a higher thermal conductivity than the sealing member 42. The heat dissipation sheet 40 is in contact with the second main surface 10b of at least one die pad portion 12. The heat dissipation sheet 40 dissipates heat generated in the power semiconductor chip 20 to the outside of the power semiconductor module 1. In one example, the heat dissipation sheet 40 is formed of an insulating resin containing a thermally conductive filler. The thermally conductive filler is, for example, silica. The insulating resin is, for example, epoxy. In another example, the heat dissipation sheet 40 is a ceramic substrate such as aluminum nitride.

[0029] A method for manufacturing the power semiconductor module 1 of the present embodiment will be described with reference to FIGS.

[0030] 5, the manufacturing method of the power semiconductor module 1 of the present embodiment includes mounting at least one power semiconductor chip 20 on at least one die pad portion 11 of the lead frame 10. Specifically, the at least one power semiconductor chip 20 is bonded onto the first main surface 10a of the at least one die pad portion 11 of the lead frame 10 by using a bonding member 21, for example.

[0031] At least one control semiconductor chip 23 may be mounted on at least one die pad portion 12 of the lead frame 10. Specifically, the at least one control semiconductor chip 23 is bonded onto the first main surface 10a of the at least one die pad portion 12 of the lead frame 10 using a bonding member 24, for example.

[0032] At least one power semiconductor chip 20 is electrically connected to the plurality of terminal portions 13. For example, at least one power semiconductor chip 20 is electrically connected to the plurality of terminal portions 13 using a plurality of conductive wires 26. The plurality of conductive wires 26 are bonded to the at least one power semiconductor chip 20 and the plurality of terminal portions 13 using a wire bonder (not shown).

[0033] At least one control semiconductor chip 23 is electrically connected to the plurality of terminal portions 14. For example, at least one control semiconductor chip 23 is electrically connected to the plurality of terminal portions 14 using a plurality of conductive wires 28. The plurality of conductive wires 28 are bonded to the at least one control semiconductor chip 23 and the plurality of terminal portions 14 using a wire bonder (not shown).

[0034] At least one power semiconductor chip 20 is electrically connected to at least one control semiconductor chip 23. For example, at least one power semiconductor chip 20 is electrically connected to at least one control semiconductor chip 23 using at least one conductive wire 27. At least one conductive wire 27 is bonded to at least one power semiconductor chip 20 and at least one control semiconductor chip 23 using a wire bonder (not shown).

[0035] 6 and 7, the manufacturing method of the power semiconductor module 1 of the present embodiment includes sealing at least one power semiconductor chip 20 with a sealing member 42. Each of the terminal portions 13 includes a plurality of portions 13a exposed from the sealing member 42. At least one control semiconductor chip 23 may also be sealed with the sealing member 42. The sealing member 42 may further seal at least one die pad portion 11 and at least one die pad portion 12. The sealing member 42 may further seal a portion of the terminal portions 13 and a portion of the terminal portions 14. The sealing member 42 may further seal the conductive wires 26, 27, and 28. The sealing member 42 may further seal a portion of the heat dissipation sheet 40. Each of the terminal portions 14 includes a plurality of portions 14a exposed from the sealing member 42.

[0036] 6, the heat dissipation sheet 40 is set in a cavity 47 of a mold 45. Then, the lead frame 10 on which at least one power semiconductor chip 20 and at least one control semiconductor chip 23 are mounted is set in the cavity 47 of the mold 45. The heat dissipation sheet 40 is in contact with the second main surface 10b of at least one die pad portion 12.

[0037] Referring to FIG. 7, a sealing resin is injected into a cavity 47 of a mold 45 from an injection port 48 of the mold 45 by transfer molding or compression molding. The sealing resin is cured to form a sealing member 42. The lead frame 10 and the heat dissipation sheet 40 are integrated by the sealing member 42. At least one power semiconductor chip 20 and at least one control semiconductor chip 23 are sealed by the sealing member 42. A part of the plurality of terminals 13 may be sealed by the sealing member 42. A plurality of portions 13a of the plurality of terminals 13 are exposed from the sealing member 42. A part of the plurality of terminals 14 may be sealed by the sealing member 42. A plurality of portions 14a of the plurality of terminals 14 are exposed from the sealing member 42.

[0038] The lead frame 10 and heat dissipation sheet 40 integrated by the sealing member 42 are removed from the mold 45. Referring to FIG. 8, the lead frame 10 and heat dissipation sheet 40 integrated by the sealing member 42 are placed on a base 50. The base 50 includes a top surface 51. A recess 52 is provided in the top surface 51 of the base 50. The heat dissipation sheet 40 is placed on a bottom surface 53 of the recess 52. The recess 52 accommodates a part of the sealing member 42. The multiple portions 13a of the multiple terminal portions 13 and the multiple portions 14a of the multiple terminal portions 14 are above the top surface 51.

[0039] With reference to FIG. 9, the manufacturing method of the power semiconductor module 1 of the present embodiment includes providing an insulating member 38 between the plurality of external connection terminals 30. The insulating member 38 may be integrated with the plurality of external connection terminals 30 by molding an insulating resin. The insulating member 38 covers a surface 30m of the plurality of external connection terminals 30 that is close to the second main surface 10b of the lead frame 10 (terminal portion 14). The type of the plurality of external connection terminals 30 is changed according to the type of printed circuit board (not shown) to which the other ends of the plurality of external connection terminals 30 are joined. For example, the plurality of external connection terminals 30 of the type shown in FIG. 10 may be used, or the plurality of external connection terminals 30 of the type shown in FIG. 11 may be used according to the type of printed circuit board. The other end of each of the plurality of external connection terminals 30 of the type shown in FIG. 10 has, for example, a straight shape. The other end of each of the plurality of external connection terminals 30 of the type shown in FIG. 11 is, for example, a press-fit terminal.

[0040] 9 and 12, the manufacturing method of the power semiconductor module 1 of this embodiment includes connecting a plurality of external connection terminals 30 to a plurality of terminal portions 13, respectively, by clamping a plurality of portions 13a of the plurality of terminal portions 13 with a plurality of pairs of clamping pieces 32.

[0041] 9, an insulating member 38 having a plurality of external connection terminals 30 integrated therewith is placed on a top surface 51 of a base 50. The insulating member 38 is moved along the top surface 51 of the base 50. The insulating member 38 comes into contact with the sealing member 42. The portions 13a of the plurality of terminals 13 are each positioned between the pairs of clamping pieces 32. The portions 14a of the plurality of terminals 14 are each positioned between the pairs of clamping pieces 32.

[0042] 12, a jig 55 is used to press the multiple pairs of clamping pieces 32. The multiple pairs of clamping pieces 32 may be pressed collectively or individually using the jig 55. The multiple pairs of clamping pieces 32 are plastically deformed. The multiple pairs of clamping pieces 32 clamp the multiple portions 13a of the multiple terminal portions 13, respectively. Specifically, the multiple pairs of clamping pieces 32 are crimped to the multiple portions 13a of the multiple terminal portions, respectively. The multiple pairs of clamping pieces 32 clamp the multiple portions 14a of the multiple terminal portions 14, respectively. Specifically, the multiple pairs of clamping pieces 32 are crimped to the multiple portions 14a of the multiple terminal portions, respectively.

[0043] (Modification) 13, the power semiconductor module 1a according to the modification of the present embodiment has a single in-line package (SIP) structure. Specifically, the power semiconductor module 1a does not include the terminal portions 14 and the external connection terminals 30 corresponding to the terminal portions 14. In the power semiconductor module 1a, the external connection terminal main bodies 31 may extend along the first main surface 10a (in the x direction). In another modification of the present embodiment, the control semiconductor chip 23, at least one die pad portion 12, and the conductive wires 28 may be omitted, and the conductive wires 27 may be connected to the power semiconductor chip 20 and the terminal portions 14.

[0044] The effects of the power semiconductor modules 1, 1a and the manufacturing method thereof according to this embodiment will be described.

[0045] The power semiconductor module 1, 1a of the present embodiment includes a lead frame 10, at least one power semiconductor chip 20, a plurality of external connection terminals 30, and a sealing member 42. The lead frame 10 includes at least one die pad portion 11 and a plurality of terminal portions 13. The plurality of external connection terminals 30 are respectively connected to the plurality of terminal portions 13. The sealing member 42 seals the at least one power semiconductor chip 20. The lead frame 10 has a first main surface 10a and a second main surface 10b opposite to the first main surface 10a. The at least one power semiconductor chip 20 is mounted on the first main surface 10a of the at least one die pad portion 11 and is electrically connected to the plurality of terminal portions 13. The plurality of terminal portions 13 each include a plurality of portions 13a exposed from the sealing member 42. The plurality of external connection terminals 30 each include a plurality of pairs of clamping pieces 32. The multiple pairs of clamping pieces 32 clamp the multiple portions 13a of the multiple terminal portions 13, respectively.

[0046] In the power semiconductor module 1, 1a of the present embodiment, the pairs of clamping pieces 32 of the external connection terminals 30 each clamp a portion 13a of the terminal portions 13. Therefore, various types of external connection terminals 30 can be easily connected to the terminal portions 13 of the lead frame 10. Also, unlike connecting the external connection terminals 30 to the terminal portions 13 using a joining member such as solder, application of high temperature heat to the lead frame 10, the power semiconductor chip 20, and the sealing member 42 is prevented when connecting the external connection terminals 30 to the terminal portions 13. Therefore, the power semiconductor module 1, 1a has a longer life.

[0047] In the power semiconductor modules 1, 1a of the present embodiment, the pairs of clamping pieces 32 are crimped to the portions 13a of the terminal portions 13, respectively. Therefore, various types of external connection terminals 30 can be easily connected to the terminal portions 13 of the lead frame 10.

[0048] The power semiconductor module 1, 1a of the present embodiment further includes an insulating member 38 provided between the plurality of external connection terminals 30. Therefore, even if the distance between a pair of adjacent external connection terminals 30 is reduced, the insulating member 38 can ensure the insulation distance between the pair of adjacent external connection terminals 30. The power semiconductor module 1, 1a can be miniaturized.

[0049] In the power semiconductor modules 1, 1a of the present embodiment, the insulating member 38 is in contact with the sealing member 42. There is no gap between the sealing member 42 and the insulating member 38. Therefore, it is possible to prevent discharge from occurring between the multiple terminal portions 13. It is possible to reduce the distance between the multiple terminal portions 13. The power semiconductor modules 1, 1a can be miniaturized.

[0050] The manufacturing method of the power semiconductor module 1, 1a of the present embodiment includes mounting at least one power semiconductor chip 20 on at least one die pad portion 11 of the lead frame 10. The lead frame 10 includes at least one die pad portion 11 and a plurality of terminal portions 13. The lead frame 10 has a first main surface 10a and a second main surface 10b opposite to the first main surface 10a. The at least one power semiconductor chip 20 is mounted on the first main surface 10a of the at least one die pad portion 11 and is electrically connected to the plurality of terminal portions 13. The manufacturing method of the power semiconductor module 1, 1a of the present embodiment includes sealing at least one power semiconductor chip 20 with a sealing member 42. The plurality of terminal portions 13 each include a plurality of portions 13a exposed from the sealing member 42. The manufacturing method of the power semiconductor module 1, 1a of the present embodiment includes connecting a plurality of external connection terminals 30 to the plurality of terminal portions 13 by a plurality of pairs of clamping pieces 32 clamping a plurality of portions 13a of the plurality of terminal portions 13. Each of the plurality of external connection terminals 30 includes a plurality of pairs of clamping pieces 32 .

[0051] The manufacturing method of the power semiconductor module 1, 1a of the present embodiment includes a plurality of pairs of clamping pieces 32 of a plurality of external connection terminals 30 clamping a plurality of portions 13a of a plurality of terminal portions 13. Therefore, a plurality of external connection terminals 30 of various types can be easily connected to a plurality of terminal portions 13 of the lead frame 10. Also, unlike connecting a plurality of external connection terminals 30 to a plurality of terminal portions 13 using a joining member such as solder, application of high temperature heat to the lead frame 10, the power semiconductor chip 20, and the sealing member 42 is prevented when connecting a plurality of external connection terminals 30 to a plurality of terminal portions 13. Therefore, it is possible to obtain the power semiconductor module 1, 1a having a longer life.

[0052] In the manufacturing method of the power semiconductor modules 1, 1a of the present embodiment, clamping the portions 13a of the terminal portions 13 with the pairs of clamping pieces 32 includes crimping the pairs of clamping pieces 32 to the portions 13a of the terminal portions 13, respectively. According to the manufacturing method of the power semiconductor modules 1, 1a of the present embodiment, various types of external connection terminals 30 can be easily connected to the terminal portions 13 of the lead frame 10.

[0053] The manufacturing method of the power semiconductor module 1, 1a of the present embodiment further includes providing an insulating member 38 between the plurality of external connection terminals 30. Therefore, even if the distance between a pair of adjacent external connection terminals 30 is reduced, the insulating member 38 can ensure the insulation distance between the pair of adjacent external connection terminals 30. According to the manufacturing method of the power semiconductor module 1, 1a of the present embodiment, it is possible to obtain the miniaturized power semiconductor module 1, 1a.

[0054] Embodiment 2 A power semiconductor module 1b according to the second embodiment will be described with reference to Fig. 14 and Fig. 15. The power semiconductor module 1b according to the present embodiment has a similar configuration to the power semiconductor module 1 according to the first embodiment and achieves similar effects, but differs from the power semiconductor module 1 according to the first embodiment mainly in the following points.

[0055] In the power semiconductor module 1b, the multiple external connection terminal main bodies 31 are arranged in a staggered manner in a plan view (plan view from the z direction) of the first main surface 10a of the lead frame 10 (at least one die pad portion 12). Therefore, even if the distance in the y direction between a pair of adjacent external connection terminals 30 decreases, the insulation distance between the pair of adjacent external connection terminals 30 can be ensured. The power semiconductor module 1b can be miniaturized.

[0056] Embodiment 3 A power semiconductor module 1c according to a third embodiment will be described with reference to Fig. 16. The power semiconductor module 1c according to the present embodiment has a similar configuration to the power semiconductor module 1 according to the first embodiment, but differs from the power semiconductor module 1 according to the first embodiment mainly in the following points.

[0057] In the power semiconductor module 1c, a recess 42a is provided in the sealing member 42. A part of the insulating member 38 (a tip of the insulating member 38 distal to the plurality of external connection terminal main bodies 31) is fitted into the recess 42a.

[0058] The method for manufacturing the power semiconductor module 1c of the present embodiment includes steps similar to those of the method for manufacturing the power semiconductor module 1 of the first embodiment, but differs from the method for manufacturing the power semiconductor module 1 of the first embodiment mainly in the following points.

[0059] The manufacturing method for power semiconductor module 1c of the present embodiment further includes fitting a part of insulating member 38 into recess 42a provided in sealing member 42. Specifically, referring to FIG. 9, insulating member 38 with multiple external connection terminals 30 integrated therewith is placed on top surface 51 of base 50. Insulating member 38 is moved along top surface 51 of base 50. A part of insulating member 38 (a tip of insulating member 38 distal from multiple external connection terminal main bodies 31) is fitted into recess 42a provided in sealing member 42.

[0060] The power semiconductor module 1c and the manufacturing method thereof according to the present embodiment have the following advantages in addition to the advantages of the power semiconductor module 1 and the manufacturing method thereof according to the first embodiment.

[0061] In the power semiconductor module 1c of the present embodiment, a recess 42a is provided in the sealing member 42. A part of the insulating member 38 is fitted into the recess 42a.

[0062] Since a portion of the insulating member 38 is fitted into the recess 42a of the sealing member 42, the insulating member 38 can be prevented from being separated from the sealing member 42. Even if a force is applied to the multiple external connection terminals 30, the multiple external connection terminals 30 can be prevented from being separated from the terminal portions 13, 14. In addition, a gap is prevented from being generated between the sealing member 42 and the insulating member 38. Discharge can be prevented from occurring between the multiple terminal portions 13. Discharge can be prevented from occurring between the multiple terminal portions 14.

[0063] The method for manufacturing the power semiconductor module 1c of the present embodiment further includes fitting a part of the insulating member into a recess a provided in the sealing member .

[0064] The manufacturing method for power semiconductor module 1c of the present embodiment includes fitting a part of insulating member 38 into recess 42a of sealing member 42, and therefore insulating member 38 can be prevented from being separated from sealing member 42. Even if force is applied to the external connection terminals 30, the external connection terminals 30 can be prevented from being separated from terminal portions 13, 14. Furthermore, gaps can be prevented from being generated between sealing member 42 and insulating member 38. Discharge can be prevented from occurring between the terminal portions 13. Discharge can be prevented from occurring between the terminal portions 14.

[0065] Embodiment 4 A power semiconductor module 1d according to a fourth embodiment will be described with reference to Fig. 17. The power semiconductor module 1d according to the present embodiment has a similar configuration to the power semiconductor module 1 according to the first embodiment, but differs from the power semiconductor module 1 according to the first embodiment mainly in the following points.

[0066] In the power semiconductor module 1d, each pair of clamping pieces 32 includes a plurality of leaf springs. The pairs of clamping pieces 32 clamp the portions 13a of the terminal portions 13 by the elastic force of the leaf springs. The pairs of clamping pieces 32 clamp the portions 14a of the terminal portions 14 by the elastic force of the leaf springs.

[0067] The method for manufacturing the power semiconductor module 1d of the present embodiment includes steps similar to those of the method for manufacturing the power semiconductor module 1 of the first embodiment, but differs from the method for manufacturing the power semiconductor module 1 of the first embodiment mainly in the following points.

[0068] In the manufacturing method of the power semiconductor module 1d of the present embodiment, each of the pairs of clamping pieces 32 includes a plurality of leaf springs. Clamping the portions 13a of the terminal portions 13 with the pairs of clamping pieces 32 includes inserting the pairs of clamping pieces 32 into the portions 13a of the terminal portions 13, respectively. Clamping the portions 14a of the terminal portions 14 with the pairs of clamping pieces 32 includes inserting the pairs of clamping pieces 32 into the portions 14a of the terminal portions 14, respectively.

[0069] Specifically, referring to FIG. 9, an insulating member 38 having a plurality of external connection terminals 30 integrated therewith is placed on a top surface 51 of a base 50. The insulating member 38 is moved along the top surface 51 of the base 50. The pairs of clamping pieces 32 are inserted into the portions 13a of the terminal portions 13, respectively. The pairs of clamping pieces 32 clamp the portions 13a of the terminal portions 13 by the elastic forces of the leaf springs. The pairs of clamping pieces 32 are inserted into the portions 14a of the terminal portions 14, respectively. The pairs of clamping pieces 32 clamp the portions 14a of the terminal portions 14 by the elastic forces of the leaf springs.

[0070] The power semiconductor module 1d of the present embodiment has the following advantages in addition to the advantages of the power semiconductor module 1 of the first embodiment.

[0071] In the power semiconductor module 1d of the present embodiment, each pair of clamping pieces 32 includes a plurality of leaf springs. The pairs of clamping pieces 32 clamp the portions 13a of the terminal portions 13 by the elastic force of the leaf springs. Therefore, various types of external connection terminals 30 can be easily connected to the terminal portions 13 of the lead frame 10.

[0072] In the manufacturing method of the power semiconductor module 1d of the present embodiment, each of the pairs of clamping pieces 32 includes a plurality of leaf springs. Clamping the portions 13a of the terminal portions 13 with the pairs of clamping pieces 32 includes inserting the pairs of clamping pieces 32 into the portions 13a of the terminal portions 13, respectively.

[0073] Therefore, the plurality of external connection terminals 30 can be connected to the plurality of terminal portions 13 without a jig 55 (see FIG. 12). According to the manufacturing method of the power semiconductor module 1d of the present embodiment, the power semiconductor module 1d can be manufactured with a smaller number of manufacturing steps.

[0074] Embodiment 5. A power semiconductor module 1e according to a fifth embodiment will be described with reference to Fig. 18. The power semiconductor module 1e according to the present embodiment has a similar configuration to the power semiconductor module 1 according to the first embodiment, but differs from the power semiconductor module 1 according to the first embodiment mainly in the following points.

[0075] In the power semiconductor module 1e, a plurality of terminal portions 13 are each provided with a plurality of holes 13p. A plurality of pairs of clamping pieces 32 are engaged with the plurality of holes 13p, respectively. A plurality of terminal portions 14 are each provided with a plurality of holes 14p. A plurality of pairs of clamping pieces 32 are engaged with the plurality of holes 14p, respectively.

[0076] The method for manufacturing the power semiconductor module 1e of the present embodiment includes steps similar to those of the method for manufacturing the power semiconductor module 1 of the first embodiment, but differs from the method for manufacturing the power semiconductor module 1 of the first embodiment mainly in the following points.

[0077] In the manufacturing method of the power semiconductor module 1e of the present embodiment, a plurality of holes 13p are provided in each of the plurality of terminal portions 13. A plurality of holes 14p are provided in each of the plurality of terminal portions 14. Clamping the portions 13a of the plurality of terminal portions 13 with the plurality of pairs of clamping pieces 32 includes engaging the plurality of pairs of clamping pieces 32 with the plurality of holes 13p, respectively. Clamping the portions 14a of the plurality of terminal portions 14 with the plurality of pairs of clamping pieces 32 includes engaging the plurality of pairs of clamping pieces 32 with the plurality of holes 14p, respectively.

[0078] Specifically, referring to Fig. 12, a jig 55 is used to press the pairs of clamping pieces 32. The pairs of clamping pieces 32 are plastically deformed. The pairs of clamping pieces 32 each clamp the portions 13a of the terminal portions 13 and engage with the holes 13p. The pairs of clamping pieces 32 each clamp the portions 14a of the terminal portions 14 and engage with the holes 14p.

[0079] The power semiconductor module 1e of the present embodiment provides the following effects in addition to the effects of the power semiconductor module 1 of the first embodiment.

[0080] In the power semiconductor module 1e of the present embodiment, a plurality of holes 13p are provided in each of the plurality of terminal portions 13. The plurality of pairs of clamping pieces 32 are engaged with the plurality of holes 13p, respectively.

[0081] In the manufacturing method of the power semiconductor module 1e of the present embodiment, a plurality of holes 13p are provided in each of the plurality of terminal portions 13. The plurality of pairs of clamping pieces 32 clamping the plurality of portions 13a of the plurality of terminal portions 13 includes engaging the plurality of pairs of clamping pieces 32 with the plurality of holes 13p, respectively.

[0082] According to the power semiconductor module 1e and the manufacturing method thereof of the present embodiment, the plurality of external connection terminals 30 are more firmly connected to the plurality of terminal portions 13, respectively. The plurality of external connection terminals 30 can be more reliably prevented from coming off the plurality of terminal portions 13.

[0083] Embodiment 6 A power semiconductor module 1f according to a sixth embodiment will be described with reference to Fig. 19. The power semiconductor module 1f according to the present embodiment has a similar configuration to the power semiconductor module 1 according to the first embodiment, but differs from the power semiconductor module 1 according to the first embodiment mainly in the following points.

[0084] The power semiconductor module 1f further includes a heat sink 60. The heat sink 60 dissipates heat generated in the power semiconductor chip 20 to the outside of the power semiconductor module 1f. The heat sink 60 is formed of a material having high thermal conductivity, such as copper (Cu) or aluminum (Al). The heat sink 60 may include heat dissipation fins (not shown). A coolant (not shown), such as water, may flow inside the heat sink 60.

[0085] The heat sink 60 is connected to the second main surface 10b of at least one die pad portion 11. Specifically, the heat sink 60 is connected to the second main surface 10b of at least one die pad portion 11 via a heat dissipation sheet 40. The heat sink 60 is attached to the heat dissipation sheet 40 using a joining member (not shown) such as solder or brazing material.

[0086] The insulating member 38 is disposed between the plurality of external connection terminals 30 and the heat sink 60 .

[0087] The method for manufacturing the power semiconductor module 1f of the present embodiment includes steps similar to those of the method for manufacturing the power semiconductor module 1 of the first embodiment, but differs from the method for manufacturing the power semiconductor module 1 of the first embodiment mainly in the following points.

[0088] The manufacturing method of the power semiconductor module 1f of the present embodiment further includes connecting a heat sink 60 to the second main surface 10b of at least one die pad portion 11. The insulating member 38 is disposed between the plurality of external connection terminals 30 and the heat sink 60. In one example, after the plurality of external connection terminals 30 are connected to the plurality of terminal portions 13, 14, the heat sink 60 is connected to the second main surface 10b of at least one die pad portion 11. Specifically, a joining member such as solder or brazing material is disposed between the heat dissipation sheet 40 and the heat sink 60. The heat sink 60 is attached to the heat dissipation sheet 40 using the joining member.

[0089] 20, in a power semiconductor module 1g according to a modification of the present embodiment, the insulating member 38 may be in contact with the heat sink 60. The first main surface 10a of the at least one die pad portion 11 may be flush with the first main surfaces 10a of the plurality of terminal portions 13, 14. The first main surface 10a of the at least one die pad portion 11 may be flush with the first main surface 10a of the at least one die pad portion 12. The second main surface 10b of the at least one die pad portion 11 may be flush with the second main surface 10b of the plurality of terminal portions 13, 14. The second main surface 10b of the at least one die pad portion 11 may be flush with the second main surface 10b of the at least one die pad portion 12.

[0090] The power semiconductor modules 1f and 1g of the present embodiment have the following advantages in addition to the advantages of the power semiconductor module 1 of the first embodiment.

[0091] The power semiconductor modules 1f and 1g of the present embodiment further include a heat sink 60 connected to the second main surface 10b of at least one die pad portion 11. The insulating member 38 is disposed between the plurality of external connection terminals 30 and the heat sink 60.

[0092] The manufacturing method of power semiconductor modules 1f, 1g of the present embodiment further includes connecting a heat sink 60 to the second main surface 10b of at least one die pad portion 11. The insulating member 38 is disposed between the plurality of external connection terminals 30 and the heat sink 60.

[0093] According to the power semiconductor modules 1f, 1g and the manufacturing method thereof of the present embodiment, the insulating member 38 prevents discharge from occurring between the plurality of terminal portions 13, 14 and the heat sink 60. The distance between the plurality of terminal portions 13, 14 and the heat sink 60 can be reduced. The power semiconductor modules 1f, 1g can be miniaturized. Furthermore, since the power semiconductor modules 1f, 1g include the heat sink 60, the heat dissipation characteristics of the power semiconductor modules 1f, 1g are improved.

[0094] In the power semiconductor module 1g of the present embodiment, the insulating member 38 is in contact with the heat sink 60. Therefore, the power semiconductor module 1g can be further reduced in size.

[0095] Embodiment 7 In this embodiment, the power semiconductor modules 1, 1a, 1b, 1c, 1d, 1e, 1f, and 1g according to any one of the first to sixth embodiments are applied to a power conversion device. Although the power conversion device 200 of this embodiment is not particularly limited, the following description will be given of the case where the power conversion device 200 is a three-phase inverter.

[0096] The power conversion system shown in Fig. 21 is composed of a power source 100, a power conversion device 200, and a load 300. The power source 100 is a DC power source and supplies DC power to the power conversion device 200. The power source 100 is not particularly limited, and may be composed of, for example, a DC system, a solar cell, or a storage battery, or may be composed of a rectifier circuit or an AC / DC converter connected to an AC system. The power source 100 may be composed of a DC / DC converter that converts DC power output from the DC system into another DC power.

[0097] The power conversion device 200 is a three-phase inverter connected between the power source 100 and the load 300, converts DC power supplied from the power source 100 into AC power, and supplies the AC power to the load 300. As shown in Fig. 21 , the power conversion device 200 includes a main conversion circuit 201 that converts DC power into AC power and outputs it, and a control circuit 203 that outputs a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201.

[0098] The load 300 is a three-phase motor driven by AC power supplied from the power conversion device 200. The load 300 is, although not limited to, a motor mounted on various electric devices, and is used as, for example, a motor for a hybrid vehicle, an electric vehicle, a railroad car, an elevator, or an air conditioner.

[0099] The power conversion device 200 will be described in detail below. The main conversion circuit 201 includes a switching element (not shown) and a free wheel diode (not shown). The switching element switches the voltage supplied from the power source 100, so that the main conversion circuit 201 converts the DC power supplied from the power source 100 into AC power and supplies it to the load 300. There are various specific circuit configurations of the main conversion circuit 201, but the main conversion circuit 201 according to this embodiment is a two-level three-phase full bridge circuit and may be composed of six switching elements and six free wheel diodes connected in anti-parallel to each switching element. At least one of the switching elements and free wheel diodes of the main conversion circuit 201 may be applied to any one of the power semiconductor modules 1, 1a, 1b, 1c, 1d, 1e, 1f, and 1g according to the first to sixth embodiments described above. As the power semiconductor module 202 constituting the main conversion circuit 201, any one of the power semiconductor modules 1, 1a, 1b, 1c, 1d, 1e, 1f, and 1g according to the first to sixth embodiments described above may be applied. The six switching elements are connected in series in pairs to form upper and lower arms, and each upper and lower arm constitutes one phase (U phase, V phase, and W phase) of the full bridge circuit. The output terminals of each upper and lower arm, i.e., the three output terminals of the main conversion circuit 201, are connected to a load 300.

[0100] The main conversion circuit 201 also includes a drive circuit (not shown) that drives each switching element. The drive circuit may be built into the power semiconductor module 202, or may be provided outside the power semiconductor module 202. The drive circuit generates drive signals that drive the switching elements included in the main conversion circuit 201, and supplies the drive signals to control electrodes of the switching elements of the main conversion circuit 201. Specifically, in accordance with a control signal from the control circuit 203, the drive circuit outputs a drive signal that switches the switching element to an ON state and a drive signal that switches the switching element to an OFF state to the control electrodes of each switching element.

[0101] In the power conversion device 200 according to this embodiment, the power semiconductor modules 1, 1a, 1b, 1c, 1d, 1e, 1f, and 1g according to any one of the first to sixth embodiments are applied as a power semiconductor module 202 included in a main conversion circuit 201. Therefore, the power conversion device 200 according to this embodiment has improved reliability.

[0102] In the present embodiment, an example in which the present disclosure is applied to a two-level three-phase inverter has been described, but the present disclosure is not limited thereto and can be applied to various power conversion devices. In the present embodiment, the power conversion device is a two-level power conversion device, but the power conversion device may be a three-level power conversion device or a multi-level power conversion device. When the power conversion device supplies power to a single-phase load, the present disclosure may be applied to a single-phase inverter. When the power conversion device supplies power to a DC load or the like, the present disclosure may be applied to a DC / DC converter or an AC / DC converter.

[0103] The power conversion device to which the present disclosure is applied is not limited to the case where the load is an electric motor, and may be incorporated, for example, in a power supply device for an electric discharge machine or a laser processing machine, or in a power supply device for an induction heating cooker or a contactless power supply system. The power conversion device to which the present disclosure is applied may be used as a power conditioner for a solar power generation system, a power storage system, or the like.

[0104] The first to sixth embodiments disclosed herein should be considered as illustrative and not restrictive in all respects. At least two of the first to sixth embodiments disclosed herein may be combined unless there is a contradiction. The scope of the present disclosure is defined by the claims, not the above description, and is intended to include all modifications within the meaning and scope of the claims. [Explanation of symbols]

[0105] 1, 1a, 1b, 1c, 1d, 1e, 1f, 1g Power semiconductor module, 10 Lead frame, 10a First main surface, 10b Second main surface, 11, 12 Die pad portion, 13, 14 Terminal portion, 13a, 14a Portion, 13p, 14p Hole, 20 Power semiconductor chip, 21, 24 Joint member, 23 Control semiconductor chip, 26, 27, 28 Conductive wire, 30 External connection terminal, 30m Surface, 31 External connection terminal main body, 32 Clamping piece, 38 Insulating member, 40 Heat dissipation sheet, 42 Sealing member, 42a Recess, 45 Mold, 48 Inlet, 50 Base, 51 Top surface, 52 Recess, 53 Bottom surface, 55 Jig, 60 Heat sink, 100 Power source, 200 Power conversion device, 201 Main conversion circuit, 202 power semiconductor module, 203 control circuit, 300 load.

Claims

1. a lead frame including at least one die pad portion and a plurality of terminal portions; At least one power semiconductor chip; A plurality of external connection terminals respectively connected to the plurality of terminal portions; a sealing member that seals the at least one power semiconductor chip, the lead frame has a first main surface and a second main surface opposite the first main surface; the at least one power semiconductor chip is mounted on the first main surface of the at least one die pad portion and is electrically connected to the plurality of terminal portions; each of the terminal portions includes a plurality of portions exposed from the sealing member; Each of the plurality of external connection terminals includes a plurality of pairs of clamping pieces, the plurality of pairs of clamping pieces clamp the plurality of portions of the plurality of terminal portions, A plurality of holes are provided in each of the plurality of terminal portions, A power semiconductor module, wherein the pairs of clamping pieces are engaged with the holes, respectively.

2. The power semiconductor module according to claim 1 , wherein the plurality of pairs of clamping pieces are crimped to the plurality of portions of the plurality of terminal portions, respectively.

3. Each of the pairs of clamping pieces includes a plurality of leaf springs, The power semiconductor module according to claim 1 , wherein the plurality of pairs of clamping pieces clamp the plurality of portions of the plurality of terminal portions by elastic forces of the plurality of leaf springs.

4. a lead frame including at least one die pad portion and a plurality of terminal portions; At least one power semiconductor chip; A plurality of external connection terminals respectively connected to the plurality of terminal portions; a sealing member that seals the at least one power semiconductor chip; an insulating member provided between the plurality of external connection terminals; a heat sink; the lead frame has a first main surface and a second main surface opposite the first main surface; the at least one power semiconductor chip is mounted on the first main surface of the at least one die pad portion and is electrically connected to the plurality of terminal portions; each of the terminal portions includes a plurality of portions exposed from the sealing member; Each of the plurality of external connection terminals includes a plurality of pairs of clamping pieces, the plurality of pairs of clamping pieces clamp the plurality of portions of the plurality of terminal portions, the heat sink is connected to the second main surface of the at least one die pad portion, The insulating member is disposed between the plurality of external connection terminals and the heat sink.

5. The power semiconductor module according to claim 4 , wherein the insulating member is in contact with the sealing member.

6. The sealing member is provided with a recess, The power semiconductor module according to claim 5 , wherein a portion of the insulating member is fitted in the recess.

7. The power semiconductor module according to claim 4 , wherein the insulating member is in contact with the heat sink.

8. a lead frame including at least one die pad portion and a plurality of terminal portions; At least one power semiconductor chip; A plurality of external connection terminals respectively connected to the plurality of terminal portions; a sealing member that seals the at least one power semiconductor chip, the lead frame has a first main surface and a second main surface opposite the first main surface; the at least one power semiconductor chip is mounted on the first main surface of the at least one die pad portion and is electrically connected to the plurality of terminal portions; each of the terminal portions includes a plurality of portions exposed from the sealing member; Each of the plurality of external connection terminals includes a plurality of pairs of clamping pieces, the plurality of pairs of clamping pieces clamp the plurality of portions of the plurality of terminal portions, Each of the plurality of external connection terminals includes a plurality of external connection terminal main bodies, the plurality of external connection terminal main bodies are connected to the plurality of pairs of clamping pieces, respectively, and extend along a normal to the first main surface; In a plan view of the first main surface, the plurality of external connection terminal body portions are arranged in a staggered pattern.

9. at least one power semiconductor chip is mounted on at least one die pad portion of a lead frame, the lead frame including the at least one die pad portion and a plurality of terminal portions, the lead frame having a first main surface and a second main surface opposite to the first main surface, the at least one power semiconductor chip is mounted on the first main surface of the at least one die pad portion and is electrically connected to the plurality of terminal portions, and further The at least one power semiconductor chip is sealed with a sealing member, and each of the terminals includes a plurality of portions exposed from the sealing member. a plurality of pairs of clamping pieces clamping the plurality of portions of the plurality of terminal portions, thereby connecting a plurality of external connection terminals to the plurality of terminal portions, respectively; Each of the plurality of external connection terminals includes the plurality of pairs of clamping pieces, A plurality of holes are provided in each of the plurality of terminal portions, A method for manufacturing a power semiconductor module, wherein the plurality of pairs of clamping pieces clamping the plurality of portions of the plurality of terminal portions includes engaging the plurality of pairs of clamping pieces with the plurality of holes, respectively.

10. The method for manufacturing a power semiconductor module according to claim 9 , wherein the plurality of pairs of clamping pieces clamping the plurality of portions of the plurality of terminal portions includes crimping the plurality of pairs of clamping pieces to the plurality of terminal portions, respectively.

11. Each of the pairs of clamping pieces includes a plurality of leaf springs, The method for manufacturing a power semiconductor module according to claim 9 , wherein the plurality of pairs of clamping pieces clamping the plurality of portions of the plurality of terminal portions includes inserting the plurality of pairs of clamping pieces into the plurality of portions of the plurality of terminal portions, respectively.

12. at least one power semiconductor chip is mounted on at least one die pad portion of a lead frame, the lead frame including the at least one die pad portion and a plurality of terminal portions, the lead frame having a first main surface and a second main surface opposite to the first main surface, the at least one power semiconductor chip is mounted on the first main surface of the at least one die pad portion and is electrically connected to the plurality of terminal portions, and further The at least one power semiconductor chip is sealed with a sealing member, and each of the terminals includes a plurality of portions exposed from the sealing member. Providing an insulating member between a plurality of external connection terminals; a plurality of pairs of clamping pieces clamping the plurality of portions of the plurality of terminal portions, thereby connecting the plurality of external connection terminals to the plurality of terminal portions, respectively; connecting a heat sink to the second main surface of the at least one die pad portion; Each of the plurality of external connection terminals includes the plurality of pairs of clamping pieces, The method for manufacturing a power semiconductor module, wherein the insulating member is disposed between the plurality of external connection terminals and the heat sink.

13. The method for manufacturing a power semiconductor module according to claim 12, further comprising fitting a part of the insulating member into a recess provided in the sealing member.

14. A main conversion circuit including the power semiconductor module according to any one of claims 1 to 8 and converting and outputting input power; a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit.

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