Vibration Device

Abstract

To provide a vibration device with the excellent oscillation characteristic.SOLUTION: A vibration device includes a vibration element, a base having a first surface and a second surface in a front-back relation and having the vibration element disposed on the first surface side, an integrated circuit disposed on the base, a lid having an inner surface opposed to the vibration element and an outer surface in the front-back relation with the inner surface and bonded to the base so as to contain the vibration element, and a radiation layer disposed on the inner surface of the lid and having a radiation ratio higher than that of the lid.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a vibration device. [Background technology]

[0002] Patent Document 1 describes a temperature compensated oscillator having a crystal unit, and an IC that integrates a temperature sensor, a compensation voltage generating circuit, and an oscillation circuit into a single chip, the crystal unit and the IC being housed in a ceramic package. The ceramic package has a box-shaped ceramic base having a recess that opens onto its top surface, and a metal cover that is bonded to the top surface of the ceramic base so as to cover the opening of the recess, with the IC fixed to the bottom surface of the recess and the crystal unit fixed to the stepped surface of the recess. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2004-320417 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the temperature-compensated oscillator of Patent Document 1, the ceramic base has high thermal insulation properties, and heat from the IC tends to be trapped inside the ceramic package, which causes the temperature of the crystal unit inside the ceramic package to become unstable, resulting in degradation of the oscillation characteristics. [Means for solving the problem]

[0005] The vibration device of the present invention comprises a vibration element and A base having a first surface and a second surface which are in a reverse relationship, the vibration element being disposed on the first surface side; an integrated circuit disposed on the base; a lid having an inner surface facing the vibration element and an outer surface opposite to the inner surface, the lid being joined to the base so as to accommodate the vibration element; an emissive layer disposed on the inner surface of the lid and having an emissivity higher than that of the lid. [Brief description of the drawings]

[0006] [Figure 1] 3 is a cross-sectional view showing the vibration device according to the first embodiment, taken along line AA in FIG. 2. [Diagram 2] FIG. 2 is a plan view showing a vibration element. [Diagram 3] FIG. 4 is a cross-sectional view showing a vibration device according to a second embodiment. [Figure 4] FIG. 11 is a cross-sectional view showing a vibration device according to a third embodiment. [Diagram 5] FIG. 11 is a cross-sectional view showing a vibration device according to a fourth embodiment. [Figure 6] 4 is a plan view showing a recess formed on the upper surface of the lid. FIG. [Figure 7] FIG. 13 is a plan view showing a modified example of the recessed portion. [Figure 8] FIG. 13 is a plan view showing a modified example of the recessed portion. [Figure 9] FIG. 13 is a plan view showing a modified example of the recessed portion. [Figure 10] FIG. 13 is a plan view showing a modified example of the recessed portion. [Figure 11] FIG. 13 is a plan view showing a modified example of the recessed portion. [Figure 12] FIG. 13 is a cross-sectional view showing a vibration device according to a fifth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, preferred embodiments of the vibration device will be described with reference to the accompanying drawings. For ease of explanation, the upper side in Fig. 1 to Fig. 5 and Fig. 12 will be referred to as "upper" and the lower side as "lower". In this case, in Fig. 6 to Fig. 11, the front side of the paper is "upper" and the back side is "lower".

[0008] First Embodiment Fig. 1 is a cross-sectional view showing a vibration device according to a first embodiment, and is a cross-sectional view taken along line AA in Fig. 2. Fig. 2 is a plan view showing a vibration element.

[0009] 1 includes a substantially rectangular parallelepiped (regular hexahedron) package 10 having an airtight storage section S therein, and a vibration element 4 stored in the storage section S. The package 10 also includes a base 2 to which the vibration element 4 is bonded via a pair of metal bumps 81, 82, and a lid 3 that covers the vibration element 4 and is bonded to an upper surface 2a of the base 2. An integrated circuit 6 electrically connected to the vibration element 4 is formed on the lower surface 2b side of the base 2.

[0010] The base 2 is a silicon substrate. In this embodiment, a P-type silicon substrate is used in particular. Therefore, when the resonator device 1 is used, the base 2 is connected to the ground, which is a constant potential. However, the base 2 is not particularly limited, and may be an N-type silicon substrate. In addition, a semiconductor substrate other than silicon, such as a semiconductor substrate of Ge, GaP, GaAs, InP, etc., may be used.

[0011] The base 2 is plate-shaped and has an upper surface 2a as a first surface and a lower surface 2b as a second surface, which are opposite surfaces. An insulating film 26 is formed on each of the upper surface 2a and the lower surface 2b. The insulating film 26 is, for example, a silicon oxide film formed by thermally oxidizing the surface of the base 2. However, the insulating film 26 is not particularly limited, and may be, for example, a silicon nitride film. The method for forming the insulating film 26 is not limited to thermal oxidation, and may be, for example, CVD (Chemical Vapor Deposition).

[0012] In addition, an integrated circuit 6 electrically connected to the vibration element 4 is formed on the lower surface 2b of the base 2. By forming the integrated circuit 6 on the base 2 in this manner, the base 2 can be effectively utilized. In particular, by forming the integrated circuit 6 on the lower surface 2b, a larger space can be secured for forming the integrated circuit 6 since there is no bonding area with the lid 3, compared to the case where the integrated circuit 6 is formed on the upper surface 2a as in the second embodiment described later.

[0013] The integrated circuit 6 also includes, for example, a temperature sensor 6A that detects the temperature of the vibration element 4, a temperature compensation circuit 6B that compensates for the frequency-temperature characteristic specific to the vibration element 4 based on the detection result of the temperature sensor 6A, and an oscillation circuit 6C that oscillates the vibration element 4 to generate an oscillation signal such as a clock signal. That is, the vibration device 1 of this embodiment is a temperature-compensated vibration device. This results in a vibration device 1 with high frequency stability. The integrated circuit 6 also includes a power supply circuit, an output buffer, and the like. However, the configuration of the integrated circuit 6 is not particularly limited.

[0014] A laminate 60 is formed on the lower surface 2b, which is formed by laminating a wiring layer 62, an insulating layer 63, a passivation film 64, and a terminal layer 65. A plurality of active elements (not shown) formed on the lower surface 2b are electrically connected via wiring included in the wiring layer 62 to form an integrated circuit 6. The terminal layer 65 has a plurality of mounting terminals 650 electrically connected to the integrated circuit 6. In the resonator device 1, the integrated circuit 6 is connected to an external device via the mounting terminals 650.

[0015] In the illustrated configuration, the laminate 60 includes one wiring layer 62, but is not limited thereto, and a plurality of wiring layers 62 may be laminated with insulating layers 63 interposed therebetween. In other words, the wiring layers 62 and the insulating layers 63 may be alternately laminated a plurality of times. This can increase the degree of freedom in routing the wiring within the integrated circuit 6 and in installing a plurality of mounting terminals 650, for example.

[0016] The base 2 is also formed with a pair of through holes 21, 22 penetrating the base 2 in the thickness direction. A conductive material such as a metal material is filled in each of the through holes 21, 22, and through electrodes 210, 220 are formed. A pair of wirings 28, 29 electrically connected to the vibration element 4 are also disposed on the upper surface 2a of the base 2. The wiring 28 is electrically connected to the integrated circuit 6 via the through electrode 210, and the wiring 29 is electrically connected to the integrated circuit 6 via the through electrode 220.

[0017] The lid 3 is a silicon substrate, like the base 2. This makes the linear expansion coefficients of the base 2 and the lid 3 equal, suppressing the generation of thermal stress caused by thermal expansion, and resulting in a resonator device 1 with excellent vibration characteristics. In addition, since the resonator device 1 can be formed by a semiconductor process, the resonator device 1 can be manufactured with high precision and can be made compact. However, the lid 3 is not particularly limited, and a semiconductor substrate other than silicon, such as a semiconductor substrate of Ge, GaP, GaAs, InP, etc., may be used.

[0018] The lid 3 is box-shaped and has an upper surface 3a, a lower surface 3b, and a bottomed accommodation recess 31 that opens to the lower surface 3b and accommodates the vibration element 4 therein. The lower surface 3b of the lid 3 is joined to the upper surface 2a of the base 2 via a metal layer 7. By joining the base 2 and the lid 3 via the metal layer 7, they can be joined firmly and tightly. This makes it possible to increase the strength of the package 10 and to increase the airtightness of the accommodation portion S.

[0019] The lid 3 is electrically connected to the base 2 via the metal layer 7. As described above, when the resonator device 1 is in use, the base 2 is connected to the ground, and the lid 3 is also connected to the ground. Therefore, the entire package 10 functions as a shield, and the influence of external electromagnetic noise can be reduced. This results in a highly reliable resonator device 1.

[0020] Furthermore, an emission layer 8 having a higher emissivity than that of the lid 3 is disposed on the inner surface of the lid 3, i.e., the bottom surface 311 and the side surface 312 of the accommodation recess 31. This allows the emission layer 8 to absorb heat (mainly radiant heat from the integrated circuit 6) in the accommodation portion S and efficiently release the absorbed heat from the lid 3 to the outside. This results in a vibration device 1 with a more stable temperature of the vibration element 4, a smaller frequency deviation, and more accurate oscillation characteristics. In particular, by disposing the emission layer 8 not only on the bottom surface 311 but also on the side surface 312, a higher heat dissipation effect can be achieved.

[0021] The definition of "emissivity" in this specification is based on JIS Z8117, and this emissivity can be measured, for example, by a spectral emissivity measurement method using an FTIR (Fourier transform infrared spectrophotometer) in accordance with JIS R1801.

[0022] Since the emissivity of silicon, which is the material of the lid 3, at room temperature is about 0.2, the emissivity of the emitting layer 8 at room temperature should be higher than this, and is preferably 0.5 or more. This allows the heat in the storage section S to be more efficiently released to the outside from the lid 3, resulting in a resonator device 1 with more accurate oscillation characteristics.

[0023] The material constituting such an emission layer 8 preferably contains at least any one of copper oxide (0.87), titanium oxide (0.51 to 0.61), silicon oxide (0.65 to 0.9), silicon nitride (0.75 to 0.9), glass material (0.91 to 0.94), aluminum nitride (0.93), nickel oxide (0.31 to 0.46), and platinum black (0.93). The numerical values ​​in parentheses indicate the respective emissivities. Among these, copper oxide, titanium oxide, silicon oxide, silicon nitride, and aluminum nitride are particularly suitable for use in semiconductor processes, and therefore the use of these materials facilitates the manufacture of the resonator device 1. Furthermore, nickel oxide and platinum black are suitable for use in sputtering, and therefore the use of these materials facilitates the manufacture of the resonator device 1.

[0024] Moreover, it is preferable to use metal-based materials such as copper oxide, titanium oxide, aluminum nitride, nickel oxide, platinum black, etc., rather than silicon-based materials such as silicon oxide and silicon nitride, as the constituent material of the radiation layer 8. Metal-based materials have higher thermal conductivity than silicon-based materials, and can exhibit a higher heat dissipation effect.

[0025] In this embodiment, the radiation layer 8 is arranged on both the bottom surface 311 and the side surface 312 of the accommodating recess 31, but this is not limited to this. For example, the radiation layer 8 may be arranged only on the bottom surface 311, or the radiation layer 8 may be arranged only on the side surface 312.

[0026] The housing section S in the package 10 is airtight and in a reduced pressure state, preferably in a state closer to a vacuum. This reduces viscous resistance and improves the oscillation characteristics of the vibration element 4. However, the atmosphere in the housing section S is not particularly limited, and may be, for example, an atmosphere filled with an inert gas such as nitrogen or Ar, or may be in an atmospheric pressure state or a pressurized state instead of a reduced pressure state.

[0027] As shown in FIG. 2, the vibration element 4 has a vibration substrate 41 and an electrode 42 arranged on the surface of the vibration substrate 41. The vibration substrate 41 has a thickness shear vibration mode, and is formed of an AT-cut quartz substrate in this embodiment. The AT-cut quartz substrate has a third-order frequency-temperature characteristic, and therefore the vibration element 4 has excellent temperature characteristics. The electrode 42 has an excitation electrode 421 arranged on the upper surface, and an excitation electrode 422 arranged on the lower surface opposite the excitation electrode 421. The electrode 42 has a pair of terminals 423 and 424 arranged on the lower surface of the vibration substrate 41, a wiring 425 that electrically connects the terminal 423 and the excitation electrode 421, and a wiring 426 that electrically connects the terminal 424 and the excitation electrode 422.

[0028] The configuration of the vibration element 4 is not limited to the above-mentioned configuration. For example, the vibration element 4 may be a mesa type in which the vibration region sandwiched between the excitation electrodes 421 and 422 protrudes from its surroundings, or conversely, may be an inverted mesa type in which the vibration region is recessed from its surroundings. In addition, bevel processing for grinding the periphery of the vibration substrate 41, or convex processing for making the upper and lower surfaces into convex curved surfaces may be performed.

[0029] The vibration element 4 is not limited to vibrating in a thickness-shear vibration mode, and may be, for example, a tuning fork type vibration element with multiple vibrating arms that perform bending vibration in an in-plane direction. In other words, the vibration substrate 41 is not limited to being formed from an AT-cut quartz substrate, and may be formed from a quartz substrate other than an AT-cut quartz substrate, for example, an X-cut quartz substrate, a Y-cut quartz substrate, a Z-cut quartz substrate, a BT-cut quartz substrate, an SC-cut quartz substrate, an ST-cut quartz substrate, or the like.

[0030] The material of the vibration substrate 41 is not limited to quartz crystal, and may be, for example, a piezoelectric single crystal such as lithium niobate, lithium tantalate, lithium tetraborate, langasite, potassium niobate, or gallium phosphate, or may be a piezoelectric single crystal other than these. Furthermore, the vibration element 4 is not limited to a piezoelectric drive type vibration piece, and may be an electrostatic drive type vibration piece using electrostatic force.

[0031] Such a vibration element 4 is bonded to the upper surface 2a of the base 2 via a pair of metal bumps 81, 82, and is electrically connected to the wirings 28, 29. The metal bumps 81, 82 are, for example, stud bumps, plated bumps, etc. The metal bumps 81, 82 are bonded to the wirings 28, 29 by ultrasonic bonding, and are bonded to the terminals 423, 424 by thermocompression bonding. However, the bonding method is not particularly limited. For example, one connection may be made by a metal bump, and the other connection may be made by a metal wire. Also, a conductive adhesive may be used as a bonding member instead of the metal bumps 81, 82.

[0032] The above describes the vibration device 1. As described above, the vibration device 1 includes a base 2 having a vibration element 4, an upper surface 2a as a first surface and a lower surface 2b as a second surface in a back-and-forth relationship, and the vibration element 4 is disposed on the upper surface 2a side, an integrated circuit 6 disposed on the base 2, a bottom surface 311 as an inner surface facing the vibration element 4, and a lid 3 having a top surface 3a as an outer surface in a back-and-forth relationship with the bottom surface 311, and bonded to the base 2 so as to accommodate the vibration element 4, and a radiation layer 8 disposed on the bottom surface 311 of the lid 3 and having a higher emissivity than the emissivity of the lid 3. As a result, the radiation layer 8 absorbs heat in the accommodation portion S, and the absorbed heat is efficiently released from the lid 3 to the outside. As a result, the temperature of the vibration element 4 becomes more stable, the frequency deviation becomes smaller, and the vibration device 1 has a more accurate oscillation characteristic.

[0033] As described above, the base 2 and the lid 3 are each a silicon substrate. This allows the base 2 and the lid 3 to exhibit high heat dissipation properties. As a result, the temperature of the vibration element 4 becomes more stable, the frequency deviation becomes smaller, and the vibration device 1 has more accurate oscillation characteristics.

[0034] As described above, the emissivity of the emitting layer 8 at room temperature is preferably 0.5 or more. This allows the heat in the housing section S to be more efficiently released to the outside through the lid 3, resulting in a resonator device 1 with more accurate oscillation characteristics.

[0035] As described above, the constituent material of the emissive layer 8 preferably contains at least any one of copper oxide, titanium oxide, silicon oxide, silicon nitride, glass material, aluminum nitride, nickel oxide, and platinum black, which makes it easier to form the emissive layer 8.

[0036] As described above, the lid 3 has the accommodating recess 31 that accommodates the vibration element 4 with the inner surface serving as the bottom surface 311, and the emitting layer 8 is also disposed on the side surface 312 of the accommodating recess 31. This increases the area of ​​the emitting layer 8, making the effect of the emitting layer 8 more prominent. As a result, the temperature of the vibration element 4 becomes more stable, and the vibration device 1 has smaller frequency deviation and more accurate oscillation characteristics.

[0037] <Second embodiment> FIG. 3 is a cross-sectional view showing a vibration device according to a second embodiment.

[0038] This embodiment is similar to the first embodiment described above, except for the arrangement of the integrated circuit 6. In the following description, the differences between this embodiment and the previous embodiment will be mainly described, and the description of the similarities will be omitted. In addition, in each drawing of this embodiment, the same reference numerals are used for the same configurations as the previous embodiment.

[0039] As shown in FIG. 3, in the resonation device 1 of this embodiment, the integrated circuit 6 is disposed on the upper surface 2a side of the base 2 and is housed in the housing portion S. With this configuration, the integrated circuit 6 can be protected from moisture and dust. Therefore, the reliability of the resonation device 1 can be improved. Furthermore, since the heat of the integrated circuit 6 is more likely to be trapped in the housing portion S than in the first embodiment described above, the effect of the radiation layer 8 becomes more pronounced.

[0040] In this embodiment, the vibration element 4 is mounted on the integrated circuit 6, and the terminal layer 65 includes wiring 651, 652 electrically connected to the vibration element 4 via metal bumps 81, 82. In addition, an external terminal 25 electrically connected to the integrated circuit 6 via through electrodes 210, 220 is disposed on the lower surface 2b side of the base 2.

[0041] As described above, in the resonation device 1 of the present embodiment, the integrated circuit 6 is disposed on the upper surface 2a side, which serves as the first surface, of the base 2. This makes it easier for heat from the integrated circuit 6 to be trapped within the housing portion S, and the effect of the radiation layer 8 becomes more pronounced.

[0042] The second embodiment as described above can also achieve the same effects as the first embodiment.

[0043] <Third embodiment> FIG. 4 is a cross-sectional view showing a vibration device according to the third embodiment.

[0044] This embodiment is similar to the first embodiment described above, except that the emissive layer 8 is also disposed on the outer surface of the lid 3. In the following description, the differences between this embodiment and the previous embodiment will be mainly described, and the description of the similarities will be omitted. In addition, in each drawing of this embodiment, the same reference numerals are used for the same configurations as the previous embodiment.

[0045] As shown in FIG. 4, in the resonator device 1 of this embodiment, the radiation layer 8 is also disposed on the upper surface 3a as the outer surface of the lid 3. This allows the radiation layer 8 disposed on the bottom surface 311 to absorb heat in the storage section S, and the absorbed heat can be efficiently released from the radiation layer 8 disposed on the upper surface 3a. This results in a resonator device 1 with a more stable temperature of the resonator element 4, a smaller frequency deviation, and high-precision oscillation characteristics. In this embodiment, the radiation layer 8 is disposed on the entire upper surface 3a, but is not limited thereto, and may be disposed on only a part of the upper surface 3a.

[0046] The third embodiment as described above can also achieve the same effects as the first embodiment described above.

[0047] <Fourth embodiment> Fig. 5 is a cross-sectional view showing a resonation device according to a fourth embodiment. Fig. 6 is a plan view showing a recess formed on the upper surface of the lid. Figs. 7 to 11 are plan views showing modified examples of the recess.

[0048] This embodiment is similar to the first embodiment described above, except that a recess 32 is formed on the upper surface 3a of the lid 3. In the following description, the differences between this embodiment and the previous embodiment will be mainly described, and the description of the similarities will be omitted. In addition, in each drawing of this embodiment, the same reference numerals are used for the same configurations as the previous embodiment.

[0049] As shown in FIG. 5, in the resonator device 1 of this embodiment, a recess 32 is formed that opens on the upper surface 3a. By forming the recess 32, the surface area of ​​the lid 3 is increased, and heat dissipation is improved. Therefore, heat generated from the integrated circuit 6 is quickly released, and temperature fluctuations of the resonator element 4 housed therein are effectively suppressed. In addition, temperature fluctuations of the resonator element 4 caused by changes in the environmental temperature are also effectively suppressed. Therefore, the temperature of the resonator element 4 is stabilized, and the resonator device 1 has oscillation characteristics with small frequency deviation and high accuracy. In particular, the above effect is remarkable due to the synergistic effect with the emitting layer 8.

[0050] The recess 32 will be described in detail below. For ease of explanation, the direction along the width direction of the package 10 will be referred to as the first direction, and the direction along the longitudinal direction of the package 10 will be referred to as the second direction. That is, in this embodiment, the first direction and the second direction are perpendicular to each other. However, the first direction and the second direction need only intersect, and do not need to be perpendicular to each other.

[0051] As shown in FIG. 6, the recess 32 has a plurality of first recesses 321 extending along the first direction. The plurality of first recesses 321 are arranged at equal intervals in the second direction. The recess 32 has a plurality of second recesses 322 extending along the second direction. The plurality of second recesses 322 are arranged at equal intervals in the first direction. Therefore, the recesses 32 form a lattice shape. With this configuration, the surface area of ​​the lid 3 can be increased with a simple configuration, and excellent heat dissipation can be achieved.

[0052] Moreover, each of the first recesses 321 and each of the second recesses 322 is linear. This allows the first and second recesses 321, 322 to be formed using a dicing blade, making it easy to form the recesses 32. However, the shapes of the first recesses 321 and the second recesses 322 are not particularly limited, and may be, for example, wavy and meandering. Furthermore, the method of forming the recesses 32 is not particularly limited, and may be, for example, formed by etching, sandblasting, or the like.

[0053] However, the configuration of the recess 32 is not particularly limited. For example, as shown in Fig. 7, there may be one second recess 322. Alternatively, as shown in Fig. 8, the second recess 322 may be omitted and the recess 32 may have only a plurality of first recesses 321. Alternatively, as shown in Fig. 9, the recess 32 may have only one first recess 321. Even with such a configuration of the recess 32, the recess 32 is easy to form, as in the present embodiment.

[0054] Also, for example, as shown in FIG. 10, the recess 32 may have a plurality of annular recesses 323 arranged concentrically, or as shown in FIG. 11, the recess 32 may have a serpentine recess 324.

[0055] 5, the thickness T of the portion 33 between the inner surface of the lid 3, i.e., the bottom surface 311 of the accommodation recess 31 and the bottom surface of the recess 32 is not particularly limited, but is preferably 10 μm or more when the planar size of the package 10 is length L=1.6 mm or less and width W=1.2 mm or less. This makes the portion 33 sufficiently thick relative to the size of the package 10, and makes it possible to suppress bending of the portion 33 caused by the pressure difference between the inside and outside of the package 10. This results in a vibration device 1 with sufficient mechanical strength.

[0056] As described above, in the resonation device 1 of the present embodiment, the lid 3 has the recess 32 that opens on the upper surface 3a. By forming the recess 32, the surface area of ​​the lid 3 is increased, and heat dissipation is improved. Therefore, temperature fluctuations of the resonator element 4 are effectively suppressed.

[0057] As described above, the recess 32 has the linear first recess 321 extending along the first direction. This makes it easy to form the recess 32.

[0058] As described above, the recess 32 extends along the second direction different from the first direction and has the linear second recess 322 that intersects with the first recess 321. This makes it easy to form the recess 32.

[0059] The fourth embodiment as described above can also achieve the same effects as the first embodiment. In this embodiment, the recess 32 is formed over the entire upper surface 3a of the lid 3, but is not limited thereto and may be formed only in a part of the upper surface 3a.

[0060] <Fifth embodiment> FIG. 12 is a cross-sectional view showing a vibration device according to a fifth embodiment.

[0061] This embodiment is similar to the first embodiment described above, except for the configuration of the package 10. In the following description, the differences between this embodiment and the previous embodiment will be mainly described, and the description of the similarities will be omitted. In addition, in each drawing of this embodiment, the same reference numerals are used for the same configurations as the previous embodiment.

[0062] 12, in the resonator device 1 of this embodiment, the base 2 is made of a ceramic substrate, and the lid 3 is made of a metal substrate such as Kovar. This results in a package 10 with high mechanical strength. The integrated circuit 6 is formed as an IC chip separate from the base 2.

[0063] The base 2 has a recess 27 that opens to the upper surface 2a, and the lid 3 is joined to the upper surface 2a of the base 2 via a metal layer 7 so as to close the opening of the recess 27. The recess 27 has a first recess 271 that opens to the upper surface 2a, and a second recess 272 that opens to the bottom surface of the first recess 271 and is smaller than the first recess 271. The integrated circuit 6 is fixed to the bottom surface of the second recess 272, and the vibration element 4 is fixed to the bottom surface of the first recess 271 via metal bumps 81 and 82. The vibration element 4 and the integrated circuit 6 are electrically connected to each other via internal wiring (not shown) formed inside the base 2.

[0064] In addition, an emitting layer 8 is disposed on the inner surface, i.e., the lower surface, of the lid 3. Since the emissivity of Kovar, which is the material of the lid 3, at room temperature is about 0.05, the emissivity of the emitting layer 8 only needs to be higher than this, and is preferably 0.5 or more. This allows the heat in the storage section S to be more efficiently released from the lid 3 to the outside, resulting in a vibration device 1 with more accurate oscillation characteristics. Note that, as the material of the emitting layer 8, for example, the same material as that of the first embodiment described above can be used.

[0065] The fourth embodiment as described above can also achieve the same effects as the first embodiment. The emissive layer 8 can be disposed not only on the lower surface of the lid 3 but also on the outer surface, that is, the upper surface.

[0066] Although the vibration device of the present invention has been described above based on the illustrated embodiment, the present invention is not limited thereto, and the configuration of each part can be replaced with any configuration having a similar function. In addition, any other configuration may be added to the present invention. In addition, each embodiment may be appropriately combined. [Explanation of symbols]

[0067] Reference Signs List 1...Vibration device, 10...Package, 2...Base, 2a...Upper surface, 2b...Lower surface, 21...Through hole, 210...Through electrode, 22...Through hole, 220...Through electrode, 25...External terminal, 26...Insulating film, 27...Recess, 271...First recess, 272...Second recess, 28...Wiring, 29...Wiring, 3...Lid, 3a...Upper surface, 3b...Lower surface, 31...Accommodating recess, 311...Bottom surface, 312...Side surface, 32...Recess, 321...First recess, 322...Second recess, 323...Recess, 324...Recess, 33...Part, 4...Vibration element , 41... vibration substrate, 42... electrode, 421... excitation electrode, 422... excitation electrode, 423... terminal, 424... terminal, 425... wiring, 426... wiring, 6... integrated circuit, 6A... temperature sensor, 6B... temperature compensation circuit, 6C... oscillation circuit, 60... laminate, 62... wiring layer, 63... insulating layer, 64... passivation film, 65... terminal layer, 650... mounting terminal, 651... wiring, 652... wiring, 7... metal layer, 8... radiation layer, 81... metal bump, 82... metal bump, L... length, S... accommodation portion, T... thickness, W... width

Claims

1. A vibration element; a base having a first surface and a second surface which are in a reverse relationship, the vibration element being disposed on the first surface side; an integrated circuit disposed on the base; a lid having an inner surface facing the vibration element and an outer surface opposite to the inner surface, the lid being joined to the base so as to accommodate the vibration element; an emissive layer disposed on the inner surface of the lid and having an emissivity higher than the emissivity of the lid; the base and the lid are each made of a silicon substrate; A vibration device characterized in that the constituent material of the radiative layer includes at least one of copper oxide, titanium oxide, silicon oxide, silicon nitride, glass material, nickel oxide, and platinum black.

2. The vibration device according to claim 1 , wherein the emissivity of the emissive layer at room temperature is 0.5 or more.

3. the lid has an accommodation recess having the inner surface as a bottom surface and accommodating the vibration element; The vibration device according to claim 1 , wherein the radiation layer is also disposed on a side surface of the accommodating recess.

4. 4. The vibration device of claim 1, wherein the emissive layer is also disposed on the outer surface of the lid.

5. The resonation device according to claim 1 , wherein the integrated circuit is disposed on the first surface side of the base.

6. The vibration device according to claim 1 , wherein the lid has a recess that opens to the outer surface.

7. The vibration device according to claim 6 , wherein the recess has a linear first recess extending along a first direction.

8. The vibration device according to claim 7 , wherein the recess includes a linear second recess that extends along a second direction different from the first direction and intersects with the first recess.

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