Semiconductor Device

Abstract

To improve responsiveness of touch detection by shortening a detection time of a touch sensor.SOLUTION: There is provided a display device which has a gate driver, a plurality of touch sensors, and a plurality of touch interconnections, wherein the gate driver functions to supply scan signals to the plurality of touch interconnections in the same timing, and touch sensors at different positions detect whether a plurality of touches are made in the same timing to improve responsiveness. Further, the gate driver functions to control scan signals updating a display and control scan signals that the touch sensors use for detection.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a touch sensor, a display device, a display module, and an electronic device. .

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one aspect of the present invention relates to a product, a method, or a manufacturing method. , machine, manufacture, or composition of matter In particular, one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a transistor, The present invention relates to a touch panel, a driving method thereof, or a manufacturing method thereof.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. An example of such a device is a semiconductor element such as a transistor or a diode. In another example, a circuit having a semiconductor element is a semiconductor device. As another example, a device including a circuit having a semiconductor element is a semiconductor device. do. [Background technology]

[0004] Mobile devices such as smartphones, tablets, and e-books are becoming more and more popular. There is a demand for smaller, thinner, lighter, more flexible, and easier to operate electronic devices. The device is required to display information appropriate for the brightness of the environment in which it is used, such as outdoors or indoors. In addition, touch input is now possible on smartphones, tablets, e-books, etc. There is a demand for improved operability.

[0005] For example, in Patent Document 1, in an environment with sufficient brightness of outside light such as natural light or indoor lighting, It uses reflected light for display, and in environments where there is insufficient brightness, it uses a translucent element for display. There has been proposed a display device that realizes low power consumption by displaying a large amount of light.

[0006] For example, in Patent Document 2, in order to reduce the power consumption of a mobile device, Selectively updating the display of more specific areas is disclosed.

[0007] For example, in Patent Document 3, a pixel circuit for controlling a liquid crystal element and a light emitting element are arranged in one pixel. A hybrid display device is disclosed, in which a pixel circuit for controlling the pixel is provided. do. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] JP 2011-154357 A [Patent Document 2] JP 2011-085918 A [Patent Document 3] International Publication No. 2007 / 041150 Summary of the Invention [Problem to be solved by the invention]

[0009] In order to improve the operability of electronic devices by touch input, the touch detection frequency However, increasing the touch detection frequency can reduce the The problem is that the display device's drive signal becomes noise, reducing the accuracy of touch detection. There is.

[0010] Electronic devices are required to be smaller, thinner, lighter, more flexible, and easier to operate. To improve operability, display devices with touch sensors are required, and they are becoming smaller, thinner, and more flexible. In order to reduce weight, it is necessary to reduce the number of parts. There is a demand for reducing the thickness of the device.

[0011] Use your smartphone, tablet, e-book, or personal computer in a location with bright outdoor light. The use of mobile computers has become more common. Among them, smartphones, For mobile devices such as tablets that are used in places with bright outdoor light, Therefore, it is easy to consume power. Therefore, it is recommended to use it for a long time. However, the battery capacity must be increased to withstand the As the number of devices increases, there is an issue that the mobile device becomes heavier.

[0012] When using smartphones, tablets, e-books, etc. for long periods of time, the power consumption The power consumption must be reduced. Power gating is a typical method for controlling power consumption. In the case of a display device, the number of times the display is updated can be reduced. However, when the display update interval becomes long, the data Charge leakage occurs in the switch transistor that holds the charge. There is an issue that the data being displayed may deteriorate and cause flickering, reducing visibility.

[0013] In view of the above problem, one aspect of the present invention provides a display device that improves operability of touch input. Another object of the present invention is to provide a novel structure having a touch sensor. Another object of the present invention is to provide a display device having a low power consumption. One object of the present invention is to provide an electronic device that can

[0014] The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment to solve all of these problems. The subject matter will be self-evident from the description, drawings, claims, etc. Other issues can be extracted from the drawings, claims, etc.

[0015] Note that the problems of one embodiment of the present invention are not limited to the problems listed above. However, this does not preclude the existence of other problems. The other problems are described below. Problems not mentioned in this section are problems that a person skilled in the art would be able to solve by reading the specification or can be derived from drawings and other descriptions, and can be appropriately extracted from these descriptions. In addition, one aspect of the present invention is to achieve at least one of the above-listed objects and / or other objects. This is to solve one problem. [Means for solving the problem]

[0016] One embodiment of the present invention is a display device having a gate driver, a plurality of touch sensors, and a plurality of wirings. A display device, wherein a plurality of wirings are respectively connected to a plurality of touch sensors, and a gate driver The bar has a function of applying scanning signals to multiple wirings at the same timing, and multiple wirings at different positions The touch sensor has the function of detecting the presence or absence of multiple touches at the same time. The display device is characterized by the above.

[0017] One embodiment of the present invention is a display device including a display region and a gate driver, The region includes a plurality of pixels, a plurality of touch sensors, a plurality of scanning lines, a plurality of touch wirings, the gate driver has a function of applying a first scanning signal to a plurality of scanning lines; The touch driver applies a second scan signal for detecting a touch to the plurality of touch wirings. It is a display device having the following functions.

[0018] In each of the above configurations, the pixel has a first display element, and the first display element is a transmissive liquid crystal display. A display device that is a liquid crystal device is preferred.

[0019] In each of the above configurations, the pixel has a first display element, and the first display element is a reflective liquid crystal display. A display device that is a liquid crystal device is preferred.

[0020] In the above structure, the pixel has a first display element and a second display element. The first display element has a function of reflecting visible light, and the second display element has a function of emitting visible light. A display device is preferred.

[0021] In the above structure, the second display element is preferably a display device that is a light-emitting element.

[0022] In each of the above configurations, a transistor is provided, and the transistor has a polysilicon A display device having

[0023] In each of the above structures, a transistor is provided, and the transistor has a metal oxide in a semiconductor layer. A display device having the same is preferred.

[0024] In each of the above configurations, the first light reflected by the first display element and the second light emitted by the second display element are A display device having a function of displaying an image by using either one or both of the first and second lights. is preferred. Effect of the Invention

[0025] One embodiment of the present invention can provide a display device that improves operability of touch input. Another embodiment of the present invention is to provide a display device having a novel structure including a touch sensor. Another embodiment of the present invention can provide an electronic device with reduced power consumption. Cut.

[0026] Note that the effects of one embodiment of the present invention are not limited to the effects listed above. However, this does not preclude the existence of other effects. Other effects may be affected by this item, as described below. The effects not mentioned in this section are obvious to those skilled in the art. can be derived from drawings and other descriptions, and can be appropriately extracted from these descriptions. In addition, one aspect of the present invention has at least one of the above-listed effects and / or other effects. Therefore, one aspect of the present invention is, in some cases, It may not have the effects listed. [Brief description of the drawings]

[0027] [Figure 1] 1A is a block diagram illustrating a driving timing of a touch sensor, and FIG. [Diagram 2] FIG. 2 is a block diagram illustrating a gate driver. [Diagram 3] FIG. 2 is a circuit diagram illustrating a touch sensor and a pixel of a display device. [Figure 4] FIG. 2 is a circuit diagram illustrating a touch sensor and a pixel of a display device. [Diagram 5] FIG. 1 is a schematic cross-sectional view showing a display device system. [Figure 6]FIG. 1 is a schematic cross-sectional view showing a display device system. [Figure 7] FIG. 2 is a top view illustrating a structure of a touch sensor of a display device. [Figure 8] A top view and a schematic cross-sectional view of a display device [Figure 9] FIG. [Figure 10] 1A and 1B are schematic diagrams illustrating a configuration of a pixel of a display device. [Figure 11] FIG. 1 is a cross-sectional view illustrating a structure of a pixel of a display device. [Figure 12] FIG. 1 is a cross-sectional view illustrating a structure of a pixel of a display device. [Figure 13] FIG. 1 is a cross-sectional view illustrating a structure of a pixel of a display device. [Figure 14] FIG. 1 is a cross-sectional view illustrating a structure of a pixel of a display device. [Figure 15] 1A and 1B are a top view and a cross-sectional view illustrating a structure of a display device. [Figure 16] FIG. 1 is a cross-sectional view illustrating a structure of a display device. [Figure 17] FIG. 1 is a cross-sectional view illustrating a structure of a display device. [Figure 18] FIG. 2 is a bottom view illustrating a pixel configuration of a display device. [Figure 19] FIG. 2 is a circuit diagram illustrating a pixel circuit of a display device. [Figure 20] FIG. 2 is a cross-sectional view illustrating a configuration of a reflective film of a display device. [Figure 21] FIG. 2 is a top view illustrating a structure of a reflective film of a display device. [Figure 22] FIG. 2 is a top view illustrating a pixel and a sub-pixel of a display device. [Figure 23] 3A and 3B are a cross-sectional view and a perspective view illustrating the shape of an optical element of a display device. [Figure 24] 3A to 3C are diagrams illustrating the operation of a display device. [Diagram 25] 1A to 1C are diagrams illustrating examples of the configuration of electronic devices. [Figure 26] 1A to 1C are diagrams illustrating examples of the configuration of electronic devices. [Figure 27] FIG. 4 is a diagram for explaining the measurement results of the XRD spectrum of a sample. [Figure 28] 1A to 1C are diagrams illustrating a TEM image and an electron beam diffraction pattern of a sample. [Figure 29] FIG. 1 is a diagram illustrating EDX mapping of a sample. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] Hereinafter, the embodiments will be described with reference to the drawings. The present invention may be embodied in various different forms without departing from its spirit and scope. It will be readily understood by those skilled in the art that various modifications and changes may be made to the embodiments and details of the present invention. However, the present invention should not be construed as being limited to the description of the following embodiments.

[0029] Also, in the drawings, the size, layer thickness, or area are exaggerated for clarity. Therefore, the scale is not necessarily limited to that shown in the drawings. The drawings are merely schematic illustrations and are not limited to the shapes or values ​​shown in the drawings.

[0030] In addition, the ordinal numbers "first," "second," and "third" used in this specification refer to the components of the It should be noted that this is added to avoid confusion and is not intended to limit the numbers.

[0031] In addition, in this specification, the words "above" and "below" indicating the position of the components are used. The positional relationship is used for convenience in describing the drawings. The relationship changes depending on the direction in which each component is depicted. The above words and phrases are not limited to those used above, but can be rephrased appropriately depending on the situation.

[0032] In this specification, a transistor includes a gate, a drain, and a source. The drain terminal is a diode that has at least three terminals. A transistor is placed between the drain electrode and the source (source terminal, source region or source electrode). A current flows between the source and the drain through the channel region. In this specification and the like, the channel region refers to a region through which a current mainly flows. This refers to the area in which the fluid flows.

[0033] In addition, the functions of the source and drain may differ depending on whether transistors of different polarities are used or the circuit In operation, when the direction of the current changes, the positions may be reversed. In the specification, the terms source and drain may be used interchangeably. do.

[0034] In addition, in this specification, "electrically connected" means "something that has some kind of electrical effect." This includes cases where the device is connected via a "device having some electrical function." "of" is not subject to any particular restrictions as long as it enables the transmission and reception of electrical signals between connected objects. For example, "something that has an electrical effect" includes electrodes, wiring, and transistors. These devices have various functions such as switching elements, resistor elements, inductors, capacitors, etc. This includes elements such as:

[0035] In addition, in this specification, "parallel" means that two straight lines are at an angle of -10° or more and 10° or less. This means that the angle is set at 0.05°. Therefore, it includes the angle between -5° and 5°. "Perpendicular" means that two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, this also includes cases where the angle is between 85° and 95°.

[0036] In addition, in this specification and the like, the terms "film" and "layer" are interchangeable. For example, the term "conductive layer" can be changed to the term "conductive film." Or, for example, the term "insulating film" may be changed to "insulating layer." In some cases, it may be possible to change the term to

[0037] In this specification and the like, unless otherwise specified, the off-state current refers to the current that occurs when a transistor is off. This refers to the drain current when the device is in a non-conducting state (also called a cut-off state). Unless otherwise specified, for n-channel transistors, V is the voltage between the gate and source When gs is lower than the threshold voltage Vth, the gate and This refers to a state in which the voltage Vgs between the n-channel transistors is higher than the threshold voltage Vth. The off-state current of a transistor is the voltage between the gate and source, Vgs, that is, the threshold voltage, Vt This may refer to the drain current when it is lower than h.

[0038] The off-state current of a transistor may depend on Vgs. The off-state current is I or less if there exists a Vgs value at which the off-state current of the transistor is I or less. The off-state current of a transistor is the current that flows through it in the off-state at a given Vgs. , an off-state at Vgs within a given range or a sufficiently reduced off-current is obtained. It may refer to the off-state current at Vgs, etc.

[0039] As an example, when the threshold voltage Vth is 0.5V and Vgs is 0.5V, The current is 1×10 -9 A, and the drain current at Vgs of 0.1 V is 1×10 -1 3 A, and the drain current at Vgs -0.5 V is 1×10-19 A and Vg The drain current at s = -0.8 V is 1 × 10 -22 A n-channel transistor The drain current of the transistor is as follows when Vgs is -0.5V: , or 1×10 when Vgs is in the range of −0.5V to −0.8V -19 A or below Therefore, the off-state current of the transistor is 1×10 -19 It may be said that it is below A. The drain current of the transistor is 1×10 -22 Because there exists a Vgs below A , the off-state current of the transistor is 1×10 -22 It may be said that it is below A.

[0040] In this specification, the off-state current of a transistor having a channel width W is expressed as It is sometimes expressed as the current value that flows per watt. Also, for a given channel width (for example, 1 μm), In the latter case, the unit of the off-state current is current / length. It may be expressed in units with an element (e.g., A / μm).

[0041] The off-state current of a transistor may depend on temperature. Unless otherwise specified, the off-state current is measured at room temperature, 60℃, 85℃, 95℃, or 125℃. Or, the reliability of the semiconductor device including the transistor may be insufficient. or the temperature at which a semiconductor device or the like including the transistor is used (for example, The off-state current at any one of temperatures between 5°C and 35°C may be used. The off-state current of the transistor is I or less at room temperature, 60°C, 85°C, 95°C, 125°C, and the The temperature at which the reliability of a semiconductor device including a transistor is guaranteed, or the temperature at which the transistor The temperature at which the semiconductor device or the like containing the above is used (for example, any one of 5°C to 35°C) ), there exists a value of Vgs at which the off-state current of the transistor is I or less. There is a match.

[0042] The off-state current of a transistor may depend on the voltage Vds between the drain and source In this specification, unless otherwise specified, the off-state current is measured when Vds is 0.1 V, 0.8 V, 1V, 1.2V, 1.8V, 2.5V, 3V, 3.3V, 10V, 12V, 16V, or It may represent the off-state current at 20 V. In the case of a semiconductor device that includes the transistor, the reliability of the device is guaranteed. The off-state current of a transistor may be expressed as the off-state current at the Vds used in the I or less means that Vds is 0.1V, 0.8V, 1V, 1.2V, 1.8V, 2.5 V, 3V, 3.3V, 10V, 12V, 16V, 20V, the semiconductor device that contains the transistor Vds that guarantees the reliability of semiconductor devices, etc., or semiconductor devices including the transistor Vds used in the above, Vgs where the off-current of the transistor is I or less It may refer to the presence of a value.

[0043] In the above description of the off-state current, the drain may be read as the source. The current may also refer to the current through the source when the transistor is in the off state.

[0044] In this specification and the like, the term "leak current" may be used to mean the same thing as the "off current." In this specification, the off-state current refers to, for example, the current flowing when a transistor is in an off state. , may refer to the current flowing between the source and drain.

[0045] Voltage refers to the potential difference between two points, and potential refers to the electrostatic field at a certain point. This refers to the electrostatic energy (electrical potential energy) possessed by a unit charge in a particle. Generally, the potential difference between a potential at a certain point and a reference potential (for example, ground potential) This is simply called potential or voltage, and potential and voltage are often used synonymously. Therefore, in this specification, unless otherwise specified, potential may be read as voltage. In this specification, voltage may be read as potential.

[0046] (Embodiment 1) In this embodiment, an in-cell type touch sensor that improves the operability of touch detection is described. This will be described with reference to FIGS. 1 to 9.

[0047] FIG. 1A shows the driving timing of a display device 10 having a touch sensor. FIG. 1(B) shows a block diagram of the display device 10. As an example, FIG. 1(A) shows a display This shows the time when 60 frames are displayed on a single screen. One frame is the pixel data of the display device. This represents the period during which all the pixels are updated. One frame period is approximately 16.6 ms. do.

[0048] FIG. 1A shows a frame period in which the display is updated during a period T0-T1 and the touch sensor is The touch sensor detects a touch from a detection target during a period T1-T3. The period T0-T1 during which the touch is detected and the period T1-T3 during which the touch is detected may be the same in length. The period T1-T3 during which touch is detected may be longer than the period T0-T1 during which the display is updated. Or, the period T0-T1 during which the display is updated is longer than the period T1-T3 during which the touch is detected. FIG. 1A shows the display update period T0-T1 and the touch detection period T2-T3. We will now explain an example in which T1-T3 are controlled to be periods of equal length.

[0049] In FIG. 1A, in one frame period T0-T3, the display is This shows an example in which the touch is detected during the remaining period T1-T3. Within the period in which a touch is detected, there are two more periods T1-T2 and T2-T3 in which a touch is detected. T3 is set. By setting the number of touch detection times to two or more, the touch detection accuracy is improved. However, the period for detecting a touch may be set to only one.

[0050] The accuracy of touch detection depends on how many touch detection periods are set within one frame period. In the example of FIG. 1(A), the non-detection period is about 8 ms, and the detection period is about 4 ms. By setting up multiple touch detection periods, the accuracy of touch detection is improved. It can be raised.

[0051] The control signal given when updating the display becomes noisy, causing the touch sensor to make a false detection. Therefore, it is preferable to stop touch detection during the period when the display is updated. During the period when a touch is detected, the display is not updated. During this time, it is preferable that the circuitry for updating the display is deactivated. The selection transistor that holds the data to be read is in the off state. It is preferable that the leakage current is small. The pixel will be described in detail with reference to FIG. 3. The transistor having a small capacitance will be described in detail in Embodiment 4.

[0052] Touch sensors are classified into projected capacitive type, surface capacitive type, Any detection method can be used, such as a resistive film method or an optical method. However, data can be input by the object touching or approaching the touch sensor. In this embodiment, a touch sensor using a projected capacitive touch sensor will be described as an example. do.

[0053] The display device 10 shown in FIG. 1B has row-direction signal lines for operating the touch sensor. A gate driver 61 for controlling the touch, a receiver circuit 62 for detecting the touch, and a plurality of touch The gate driver 61 has the touch sensor 63 and the pixel 64. In FIG. 1B, a touch sensor 63 (1, 6) is provided. 13 shows an example in which a plurality of pixels 64 are provided at positions overlapping the position.

[0054] The touch sensor 63 includes a pixel and a touch array to which a scanning signal for the touch sensor is applied. a touch wire COM-Tx, and a touch wiring COM-Rx that transmits touch detection as an electrical signal; The pixels are described in detail in FIG. 3. The scanning line, the signal line, and the wiring CSCOM are electrically connected to each other. This will be described in detail with reference to FIG. 3. In FIG. 1(B), the touch sensors 63 are arranged in a 6×6 pattern. However, the number of touch sensors 63 can be selected appropriately. do.

[0055] In Fig. 1(B), a block diagram is used to explain the details of the drive timing shown in Fig. 1(A). In the driving timing shown in FIG. 1(A), the touch sensor 63(1,1) and 13 shows an example in which the touch sensors 63(1,4) detect a touch at the same time.

[0056] Touch sensor 63(1,1) and touch sensor 63(1,4) are disposed at positions apart from each other. When the two touch sensors 63 are detected, even if the scanning signals are applied at the same timing, the distance between the two touch sensors 63 is large. Therefore, the signals of the two touch sensors 63 are not interfered with each other at the same time. It is possible to detect the switch.

[0057] Therefore, the touch sensors in the display area can be scanned in half the time. In other words, the touch sensor is scanned at twice the frequency compared to scanning one row at a time. In FIG. 1(A) and FIG. 1(B), two rows of touch wiring COM-T In the example shown here, a scanning signal is applied to x. However, when the touch detection area is large, three or more lines are simultaneously applied. A scanning signal may be applied to several rows of touch wiring.

[0058] FIG. 2 explains the gate driver 61. The gate driver 61 updates the display. The touch sensor has a function of supplying a scanning signal to the scanning line for touching the touch sensor. In the figure, n is an integer of 1 or more.

[0059] The gate driver 61 includes a decoder 61a, a plurality of selection circuits 61b, and a plurality of buffers. The selection circuit 61b includes a shift register 61c and a switch 61d. , a switch 61e, and a switch 61f.

[0060] Terminal 2 of switch 61d is electrically connected to scanning line 65(1) via buffer 61g. The terminal 2 of the switch 61e is connected to the scanning line 65(2) via a buffer 61g. The terminal 2 of the switch 61f is electrically connected to the tap through a buffer 61g. The COM-TX is electrically connected to the switch wiring COM-Tx.

[0061] The decoder 61a is electrically connected to a wiring ADD and a wiring CTRL. The input signal DE is generated from the signal Address given to the line ADD. It is preferable that a plurality of signals Address are given to a plurality of wirings ADD. Furthermore, the signal Sel applied to the wiring CTRL generates a scan signal for updating the display. It is possible to switch between a touch signal and a scanning signal for detecting a touch. To update the display, give the signal Sel a "L" level. To control the touch sensor, give the signal By giving a high level to the signal Sel, the output signal DE can be used as a different scanning signal. Cut.

[0062] The selection circuit 61b outputs a plurality of scanning signals GOUT to a plurality of scanning lines via a buffer 61g. The number of scanning lines electrically connected to the selection circuit 61b can be set to one touch. It can be set appropriately depending on the number of pixels connected to the sensor 63.

[0063] When the signal Sel is given an "L" level, the shift register 61c receives the signals SR(1) to SR(4). It has the function of sequentially outputting the signal SR(6).

[0064] When the signal Sel is given an "L" level, the terminals 1 and 2 of the switch 61d are connected to each other. The line between the first and second terminals is electrically connected, and the signal SR(1) is output to the wiring ND1. The signal is applied to the scanning line 65(1) as the scanning signal GOUT(1) via a buffer 61g. can be done.

[0065] When the signal Sel is given an "L" level, the terminals 1 and 2 of the switch 61e are connected to each other. The line between the two terminals is conductive, and the signal SR(2) is output to the wiring ND2. The signal is applied to the scanning line 65(2) as the scanning signal GOUT(2) via a buffer 61g. can be done.

[0066] When the signal Sel is given an "L" level, the terminals 3 and 2 of the switch 61f are connected to each other. The common potential given to the wiring COM is transferred to the terminal via the buffer 61g. The signal can be provided to the COM-Tx for the switch.

[0067] When the signal Sel is given an "H" level, the terminals 3 and 2 of the switch 61d are connected to each other. The line between the two terminals is electrically connected, and the L1 potential applied to the line GVSS is output to the line ND1. The L1 potential applied to ND1 is output as a scanning signal GOUT(1) via a buffer 61g. The L1 potential is the smallest potential that can be applied to the scan line 65(1). This shows that.

[0068] When the signal Sel is given an "H" level, the terminals 3 and 2 of the switch 61e are connected to each other. The line between the L1 and the ND2 terminals is electrically connected, and the L1 potential applied to the line GVSS is output to the line ND2. The L1 potential applied to ND2 is output as a scanning signal GOUT(2) via a buffer 61g. It is given on scan line 65(2).

[0069] When the signal Sel is given an "H" level, the terminals 1 and 2 of the switch 61f are connected to each other. The line between the first and second terminals is electrically connected, and the signal DE(1) is output to the wiring ND3. The signal is applied as a scan signal to the touch wiring COM-Tx via a buffer 61g. This can be done.

[0070] The period when the signal Sel is “H” is the period when touch is detected. The L1 potential is applied, and the decoder output is sent to the touch wiring COM-Tx as a scan signal. Given.

[0071] In FIG. 3, the touch sensor 63 has a plurality of pixels 64. In the example shown in FIG. In the example shown in FIG. 2, one touch sensor 63 has six pixels 64. When controlling using 61, it is preferable that the shift register 61c has a two-stage configuration.

[0072] The pixel 64 includes a selection transistor 64a, a capacitance element 64b, and a liquid crystal display element 64c. The liquid crystal display element 64c has a pixel electrode 68 (described in FIG. 7) and It has liquid crystal whose orientation direction changes depending on the potential difference with the wiring CSCOM.

[0073] Here, the touch sensor 63(1,1) will be described as an example. The gate of the selection transistor 64a is electrically connected to the scanning line 65(1). Either the source or the drain is electrically connected to a signal line 66. The other of the source and drain of the transistor 64a is connected to a pixel electrode 68 and a capacitance element 6 The other electrode of the capacitance element 64b is electrically connected to the wiring C It is electrically connected to SCOM.

[0074] The touch wiring COM-Rx(1) is disposed in the touch sensor 63(1,1). The touch wiring COM-Rx(1) functions as one of the electrodes of the touch sensor's detection element. The touch wiring COM-Tx(1) is connected to the other electrode of the detection element of the touch sensor. Therefore, the touch sensor 63(1,1) is provided with a function as a touch wiring CO The M-Tx(1) and the touch wiring COM-Rx(1) are used as a pair of electrodes, and are used as a detection element. Thus, a capacitive element 67 is formed.

[0075] The touch wiring COM-Tx and the touch wiring COM-Rx are When it operates as part of the touch panel, the touch wiring COM-Tx receives the scan signal as shown in Figure 2. Therefore, based on the amount of change in the electrical signal transmitted by the touch wiring COM-Rx, Therefore, the touch sensors 63 can independently detect the presence or absence of a touch. It can detect whether or not a touch is present.

[0076] In the configuration shown in FIG. 3, as shown in FIG. 1(B), the touch sensor 63(1,1) and the touch The touch sensor 63 (1, 4) can simultaneously detect touch. Since one is independent, it is not affected by the other touch sensor. Sensor 63(1,1), touch sensor 63(2,1), and touch sensor 63(3,4) and the touch sensor 63(4,4) can be detected simultaneously.

[0077] Therefore, the touch sensor 63 arranged in a specific area can be selectively detected. Therefore, when only a part of the display is updated, the part is touched according to the display. The sensor functionality can be enabled or disabled.

[0078] 4, a configuration different from that of the touch sensor 63 described in FIG. 3 will be described.

[0079] The difference is that the wire CSCOM is electrically connected to terminal 2 of switch 61h. The terminal 1 of the switch 61h is electrically connected to the wiring COM. The terminal 3 of h is electrically connected to the touch wiring COM-Rx.

[0080] The switch 61h is electrically connected to the line CTRL and receives a signal Sel. When Sel is at "L", terminals 1 and 2 of switch 61h are electrically connected, and wiring CO The common potential applied to M is applied to the wiring CSCOM. During the period when the signal Sel is “H”, Terminals 2 and 3 of switch 61h are electrically connected, and the detection signal Sen of wiring CSCOM is Output to the touch wiring COM-Rx.

[0081] Therefore, the wiring CSCOM is connected to the reference potential of the liquid crystal display element 64c when the pixel is displaying. When the wiring CSCOM operates as a part of the touch sensor, The touch panel is provided with a function as one of the electrodes of the detection element of the touch sensor, and is also used as a touch arrangement. The line COM-Tx is given a function as the other electrode of the sensing element of the touch sensor.

[0082] The touch sensor 63 is configured by forming a touch wiring COM-Tx and a wiring CSCOM as a pair of electrodes. During the period when the signal Sel is at "L", A common potential is applied to the wiring COM-Tx for the signal input and the wiring CSCOM via the wiring COM. Therefore, the capacitance value of the capacitive element 67 can be canceled, and the quality of the display is not affected.

[0083] When the signal Sel is at “H”, the wiring CSCOM is connected to one of the electrodes of the detection element of the touch sensor. Therefore, the selection transistor 64a of the pixel 64 is required to have a low off-current. .

[0084] The touch wiring COM-Tx and the wiring CSCOM work as part of the touch sensor. At that time, as shown in FIG. 2, a scanning signal is applied to the touch wiring COM-Tx. The liquid crystal display element 64c changes its orientation depending on the potential difference between the pixel electrode and the wiring CSCOM. The gray scale of the display is expressed by the liquid crystal. It is preferable that the off-current of the selection transistor 64a is small. The leakage current through the transistor 64a can be suppressed. If the voltage of the wiring CSCOM Even if the value changes, the off-current of the selection transistor is small, so the change in gray scale can be suppressed. can.

[0085] The gate driver 61 shown in FIG. 2 is a single gate driver that controls display and touch detection. 61. Display and touch detection are controlled at different timings. Therefore, the signal / noise ratio (SN ratio) of the touch sensor is ) can be increased, thereby improving detection accuracy.

[0086] FIG. 5 is a schematic cross-sectional view of the touch sensor of the display device 10. The schematic diagram shows only the components necessary to explain the operation of the touch sensor. For example, elements such as transistors may be provided on the substrate 11, but this will not be discussed here. I decided to do so.

[0087] The touch sensor shown in FIG. 5A includes a substrate 11, a substrate 12, an FPC 13, a conductive layer 14, and a liquid crystal display. The display device includes a crystal element 20, a colored film 31, and the like.

[0088] The liquid crystal element 20 is composed of a conductive layer 21, a conductive layer 22, and a liquid crystal 23. A conductive layer 22 is disposed on the liquid crystal element 20 via an insulating layer 24. The first layer functions as a pixel electrode, and the second layer functions as a common electrode.

[0089] The conductive layer 21 and the conductive layer 22 intersect with the thickness direction of the liquid crystal 23 (direction A1-A2 in the figure). They are arranged to form an electric field.

[0090] The touch sensor functions as one of a pair of electrodes of the liquid crystal element 20 provided on the substrate 11 side. The conductive layer 22a or the conductive layer 22b functions as the touch wiring COM-Tx. The capacitance formed between the electrode and the conductive layer 22c can be used for detection.

[0091] In FIG. 5B, the conductive layer 21a and the conductive An example is shown in which layer 21b functions as a pair of electrodes of a touch sensor.

[0092] In FIG. 5C, a conductive layer 22a that functions as a common electrode of the liquid crystal element 20 and a conductive 2 shows an example in which the conductive layer 22b functions as a pair of electrodes of a touch sensor.

[0093] In FIG. 5A, one of the electrodes of the touch sensor is also used as one of the electrodes of the liquid crystal element 20. By using the configuration shown in FIG. 5B or 5C, a pair of electrodes of the touch sensor One of the electrodes of the liquid crystal element 20 can serve as both of the above.

[0094] Furthermore, the conductive layer 22a, the conductive layer 22b, and the conductive layer 22c are formed from the same conductive layer. Since the conductive layer 21a and the conductive layer 21 can be formed by the above-mentioned method, the process can be simplified. Since the layers b and c can be formed from the same conductive layer, the process can be simplified.

[0095] The cross-sectional schematic diagram shown in FIG. 6(A) will be used to explain the light extraction method. do.

[0096] FIG. 6A shows an example in which a conductive layer having a light-transmitting property is used for the conductive layer 21 and the conductive layer 22. Therefore, the display device 10 includes a light source that emits visible light L1 and is provided below the substrate 11. It is preferable that the visible light L1 incident from the direction of the substrate 11 is The gradation is controlled by the liquid crystal element sandwiched between the plates 12, and the liquid crystal element It is possible to emit light with controlled gradations.

[0097] In FIG. 6B, unlike FIG. 6A, the conductive layer 21 is formed of a conductive layer that reflects visible light. Therefore, the light L2 incident from the substrate 12 is reflected by the conductive layer 21 and is reflected from the substrate 12. It is released.

[0098] By using external light for display, a light source is not required, as in the display device shown in Figure 6(A). Since the display can be performed without using a touch panel, the number of components constituting the display device can be reduced. It also reduces the power used by the light source. Under these conditions, the brightness of the reflected light increases in proportion to the brightness of the external light, improving visibility. can.

[0099] It is preferable that the conductive layer that reflects visible light has a high reflectance. When performing reflective display using external light, it has the function of obtaining high brightness.

[0100] Examples of conductive materials that are transparent to visible light include indium (In), zinc (Zn It is advisable to use a material containing one of the following elements: indium oxide (InO2) and tin (Sn). Indium, Indium Tin Oxide, Indium Zinc Oxide Indium oxide with tungsten oxide, indium oxide with tungsten oxide Lead oxide, indium oxide with titanium oxide, indium tin oxide with titanium oxide, Examples include indium tin oxide containing silicon oxide, zinc oxide, and zinc oxide containing gallium. A film containing graphene can also be used. The film containing graphene can be, for example, For example, the graphene oxide film can be formed by reducing the graphene oxide film.

[0101] Examples of conductive materials that reflect visible light include aluminum, silver, and metals thereof. Other examples include alloys containing gold, platinum, nickel, tungsten, and chromium. , molybdenum, iron, cobalt, copper, palladium, or other metallic materials, or these metallic materials In addition, the above-mentioned metal material or alloy may contain lanthanum, neodymium, etc. Aluminum, titanium, or germanium may be added. Alloys of aluminum and nickel, alloys of aluminum and neodymium, aluminum, nickel, and Aluminum alloys such as lanthanum alloys (Al-Ni-La) ), silver-copper alloy, silver-palladium-copper alloy (Ag-Pd-Cu, also written as APC), An alloy containing silver, such as an alloy of silver and magnesium, may also be used.

[0102] FIG. 7A shows a top view of the touch sensor 63 shown in FIG. 3. A touch sensor 63 having six pixels 64 will be described below. In the top view of FIG. 7(A), the stripe 64 may be included. 5 shows an example in which R elements, G elements, and B elements (colored films 31 in FIG. 5) are arranged in a stripe shape.

[0103] FIG. 7A shows a plurality of scanning lines 65, a plurality of signal lines 66, wiring CSCOM, and touch wiring. The touch panel 60 includes a COM-Tx, a touch wiring COM-Rx, and a plurality of pixels 64. The pixel 64 includes a selection transistor 64 a , a capacitance element 64 b , and a pixel electrode 68 .

[0104] As an example, the pixel 64 connected to the scanning line 65a will be described. The gate of the selection transistor 64a is electrically connected to the scanning line 65a. Either the source or the drain of the selection transistor 64a is electrically connected to the signal line 66R. Also, the same as the other of the source or drain of the selection transistor 64a The conductive layer forms one of the electrodes of the capacitance element 64b. The source of the selection transistor 64a is also formed in the area where it overlaps with the line CSCOM. Alternatively, a pixel electrode 68 is formed from the same conductive layer as the other drain.

[0105] The other electrode of the capacitance element 64b is electrically connected to a common electrode 64f via a contact 64d. The alignment direction is changed by the potential difference between the pixel electrode 68 and the common electrode 64f. The gradation of the display is controlled by the liquid crystal 23, which changes color as shown in FIG. The electrode 64f is disposed on the common electrode 64f as shown in FIG.

[0106] In addition, the touch wiring COM-Rx is electrically connected to the wiring 64h via the contact 64g. The touch sensor 63 is connected to the wiring 64h and the touch wiring COM-Tx. The pair of electrodes constitute a capacitance element 67 having a detection function. The wiring COM-Tx and the touch wiring COM-Rx are formed on the same conductive layer. is preferred.

[0107] In FIG. 7(A), touch wiring COM-Rx(2) and touch wiring COM-Rx(3) 7A, the touch sensor 63 is disposed at a different position. The touch wiring COM-Rx is electrically connected to the touch sensor 63. Depending on the number of pixels 64 that the touch sensor has, the number of pixels 64 may be appropriately set as necessary. When 63 has many pixels 64, the touch wiring COM-Rx( 2) The touch wiring COM-Rx(3) does not need to be provided.

[0108] The touch sensor 63 controls the detection sensitivity depending on the size of the capacitance element 67 having the detection function. The number of pixels in the touch sensor 63 is proportional to the size of the capacitance element 67. In order to achieve this, the number of pixels 64 and the touch wiring are appropriately determined so that the capacitance element 67 has an optimal size. The number of COM-Tx can be selected.

[0109] FIG. 7B is a top view of the touch sensor 63 shown in FIG. 4. Explain the composition of the project.

[0110] FIG. 7B shows a plurality of scanning lines 65, a plurality of signal lines 66, a plurality of wirings CSCOM, a touch The pixel 64 includes a selection wiring COM-Tx and a plurality of pixels 64. It includes a transistor 64 a , a capacitance element 64 b , and a pixel electrode 68 .

[0111] In addition, one of the electrodes of the capacitance element 64b is connected to the wiring CSCOM( The difference is that the wiring CSCOM(1) is electrically connected to the touch sensor 63 It functions as a common electrode for each pixel 64 .

[0112] In FIG. 7(B), wiring CSCOM(2) and wiring CSCOM(3) are shown. The touch sensor 63 shown in (B) is electrically connected to a touch sensor arranged at a different position. The wiring CSCOM is required depending on the number of pixels 64 that the touch sensor 63 has. Therefore, when the touch sensor 63 has many pixels 64, The wiring CSCOM(2) and wiring CSCOM(3) shown in FIG. 7(B) do not need to be provided. .

[0113] The touch wiring COM-Tx is spaced apart from the common electrode 64f of each pixel. The touch wiring COM-Tx and the common electrode 64f are used as a pair of electrodes to perform the detection function. Therefore, a capacitance element 67 having the touch wiring COM-Tx and the common electrode 6 4f is preferably formed from the same conductive layer.

[0114] <Cross-sectional structure of display device> As an example of a cross-sectional structure of a display device, a display device functioning as an in-cell type touch panel is shown. A representative example of an in-cell type touch panel is the hybrid in-cell. In the following, we will discuss the full-in-cell type, which uses a liquid crystal element as the display element. The cross-sectional structure of the touch panel is explained. It is a full-in-cell type that uses liquid crystal elements as display elements. The touch panel functions as a liquid crystal display device.

[0115] In addition, in a liquid crystal display device that functions as a full-in-cell type touch panel, the configuration of the opposing substrate is In addition, the liquid crystal display device has an electrode constituting a display element. Since the electrodes also serve as the sensing elements, the manufacturing process can be simplified and the manufacturing costs can be reduced. Yes, it is preferable.

[0116] FIG. 8A shows a top view of a liquid crystal display device 200 that can function as a touch panel. 8(B) shows a cross-sectional view between dashed lines AB and CD in FIG. 8(A). .

[0117] As shown in FIG. 8A, a liquid crystal display device 200 includes a display section 201 and a gate line driving circuit. The display unit 201 includes a plurality of pixels 203, a plurality of source lines, and a plurality of gate electrodes. The display unit 201 also functions as an input unit. That is, the display unit includes a plurality of detectors for detecting a touch or proximity of a detection target to the liquid crystal display device 200. The gate line driver circuit 202 has a sensing element and functions as a touch sensor. The pixel 203 has a function of outputting a scanning signal to the gate line of the pixel 201. In FIG. 8A, an example in which the pixel 203 has three sub-pixels is shown. One aspect is not limited to this.

[0118] FIG. 8A shows an example in which the liquid crystal display device 200 has a gate line driving circuit. The liquid crystal display device 200 includes a gate line driving circuit, a source line driving circuit, and a The present invention does not necessarily have to include all of the sensor driving circuit and the sensor drive circuit, and may include at least one of them. It's fine.

[0119] In the liquid crystal display device 200, the IC 368 is mounted on the substrate 311 by a mounting method such as the COG method. The IC 368 is implemented in, for example, a source line driver circuit, a gate line driver circuit, and a sensor It is sufficient that the semiconductor device has at least one of the driver circuits.

[0120] In addition, an FPC 369 is connected to the liquid crystal display device 200. Signals are supplied to IC368 and the gate line driver circuit from the outside. A signal can be output from IC368 to the outside via this connector.

[0121] An IC may be mounted on the FPC369. For example, A display device having at least one of a line driver, a gate line driver, and a sensor driver. C may be implemented. For example, the COF method or TAB (Tape Automate By using mounting methods such as the 3D Bonding method, ICs can be mounted on FPC369. can.

[0122] For example, the IC 368 may include a source line driver circuit and a sensor driver circuit. For example, IC368 has a source line driver circuit, and an IC mounted on FPC369 is , and may have a sensor driving circuit.

[0123] As shown in FIG. 8B, the liquid crystal display device 200 includes a transistor 38 on a substrate 311. 0a, a transistor 370a, a connecting portion 305a, a liquid crystal element 307a, and the like.

[0124] FIG. 8B shows a cross section of one subpixel as an example of the display portion 201. For example, A single image is formed by a red sub-pixel, a green sub-pixel, and a blue sub-pixel. By configuring the display unit 201 with these elements, full color display can be performed. The colors of the sub-pixels are not limited to red, green, and blue. Alternatively, sub-pixels exhibiting colors such as black, red, or cyan may be used.

[0125] The transistors 380a and 370a are formed by a conductive layer 373, an insulating layer 312, an insulating layer 315, and an insulating It includes an edge layer 313, a polysilicon film 372, a conductive layer 374a, and a conductive layer 374b.

[0126] The conductive layer 373 can function as a gate or a back gate. The conductive layer 374 can function as either a source electrode or a drain electrode. b can function as the other of the source electrode or the drain electrode.

[0127] The polysilicon film 372 has an impurity region formed by adding an impurity element. The polysilicon film 372 is a low-concentration polysilicon film formed by adding an impurity element at a low concentration. It may have an impurity region (LDD: Lightly Doped Drain).

[0128] The polysilicon film 372 is formed by a sputtering method, an LPCVD method, a plasma CVD method, or the like. After forming an amorphous silicon film, a crystallization process (laser crystallization method, thermal crystallization method) is performed. or a thermal crystallization method using a catalyst such as nickel) A semiconductor film that

[0129] The transistors 380a and 370a have a polysilicon film in the semiconductor layer. A transistor with an amorphous silicon film has a higher current density than a transistor with an amorphous silicon film. It is possible to increase the field effect mobility and increase the on-current. Furthermore, the area occupied by the circuit portion can be reduced. It becomes possible.

[0130] The transistors 380a and 370a are covered with an insulating layer 317 and an insulating layer 319. The insulating layer 317 and further the insulating layer 319 are used as the components of the transistors 380a and 370a. It can also be considered as an element.

[0131] The liquid crystal element 307a is in FFS (Fringe Field Switching) mode. The liquid crystal element 307a is a liquid crystal element to which a conductive layer 351, a conductive layer 352, and The liquid crystal 349 is formed by an electric field generated between the conductive layer 351 and the conductive layer 352. The conductive layer 351 can function as a pixel electrode. The conductive layer 352 can function as a common electrode.

[0132] By using a conductive material that transmits visible light for the conductive layer 351 and the conductive layer 352, The display device 200 can function as a transmissive liquid crystal display device. A conductive material that reflects visible light is used for the conductive layer 351, and a conductive material that transmits visible light is used for the conductive layer 352. By using such a material, the liquid crystal display device 200 can function as a reflective liquid crystal display device. This can be done.

[0133] The conductive layer 351 serving as a pixel electrode is a source or drain of the transistor 370a. Here, the conductive layer 351 is electrically connected to the conductive layer 374b. Here is an example.

[0134] The conductive layer 352 has a comb-like top surface shape (also referred to as a planar shape) or a slit-provided An insulating layer 353 is provided between the conductive layer 351 and the conductive layer 352. The conductive layer 351 overlaps with the conductive layer 352 with the insulating layer 353 interposed therebetween. In the region where the conductive layer 351 and the colored film 341 overlap, a conductive layer 352 is formed on the conductive layer 351. It has a portion that is not placed.

[0135] The connection portion 305a is connected to the gate line driving circuit 202 through an external signal (video signal, clock It is electrically connected to the external input terminal that transmits the signal (start signal, reset signal, etc.) or potential. Here, an example is shown in which FPC369 is provided as an external input terminal.

[0136] The connection portion 305a has a conductive layer 331 on an insulating layer 313, and a conductive layer 3 The conductive layer 331 is connected to the conductive layer 333 via the conductive layer 333. The conductive layer 335 is electrically connected to the conductive layer 335 via the connector 367. It is electrically connected to FPC369 via this.

[0137] The conductive layer 331 includes the conductive layer 374a and the conductive layer 374b included in the transistors 380a and 370a. The conductive layer 333 can be formed of the same material and in the same process as the liquid crystal element 374b. The conductive layer 351 of the conductive layer 307a can be formed of the same material and in the same process. The layer 335 is formed of the same material and in the same process as the conductive layer 352 of the liquid crystal element 307a. In this way, the conductive layer constituting the connection portion 305a can be formed on the display portion and the driving circuit portion. If the electrodes and wiring used in the photovoltaic device are manufactured using the same materials and processes as those used in the photovoltaic device, an increase in the number of processes can be prevented. This is preferable.

[0138] On the substrate 361, a colored film 341, a light-shielding film 343, and an insulating layer 345 are provided. FIG. 8B shows an example in which the thickness of the substrate 361 is thinner than the thickness of the substrate 311. One embodiment is not limited to this. One of the substrates 361 and 311 may be thinner than the other. However, they may have the same thickness. If the substrate on the display surface side (the side closest to the object to be detected) is made thinner, the detection This is preferable because it can increase the detection sensitivity of the sensing element.

[0139] The colored film 341 has a portion overlapping with the liquid crystal element 307a. The stalk 380a has a portion overlapping with at least one of the stalks 370a.

[0140] The insulating layer 345 prevents impurities contained in the colored film 341, the light-shielding film 343, etc. from diffusing into the liquid crystal 349. It is preferable that the insulating layer 345 has a function as an overcoat to prevent the above-mentioned problems. If not required, it need not be provided.

[0141] In addition, an alignment film is provided on the surfaces of the substrate 311 and the substrate 361 that are in contact with the liquid crystal 349. The alignment film can control the alignment of the liquid crystal 349. For example, as shown in FIG. In the above, an alignment film may be formed to cover the conductive layer 352. An alignment film may be provided between the insulating layer 345 and the liquid crystal 349. It may have both a function as a facing film and a function as an overcoat.

[0142] The liquid crystal display device 200 also includes a spacer 347. The spacer 347 is disposed between the substrate 31 and the substrate 31. 1 and the substrate 361 from becoming closer than a certain distance.

[0143] In FIG. 8B, the spacer 347 is provided on the insulating layer 353 and the conductive layer 352. However, the present invention is not limited to this embodiment. For example, the insulating layer 34 may be provided on the insulating layer 34 side, or on the substrate 361 side. 8B, the spacer 347 may be formed on the insulating layer 5. Although an example in which the insulating layer 345 is in contact with the edge layer 353 and the insulating layer 345 is shown, the insulating layer 345 may be in contact with either the substrate 311 side or the substrate 361 side. It is not necessary for the structure to be in contact with any other structure.

[0144] Granular spacers may be used as the spacers 347. Materials such as rubber or plastic can be used, but materials with elasticity such as resin and rubber should be used. At this time, the granular spacers may be crushed in the vertical direction.

[0145] The substrate 311 and the substrate 361 are bonded together by an adhesive layer 365. The liquid crystal 349 is sealed in the area surrounded by the plate 361 and the adhesive layer 365 .

[0146] When the liquid crystal display device 200 is operated as a transmissive liquid crystal display device, a polarizing plate is not provided. The two are arranged so that they sandwich the display unit. Light is incident through a polarizing plate. At this time, the voltage applied between the conductive layer 351 and the conductive layer 352 is The orientation of the liquid crystal 349 can be controlled by pressure, and the optical modulation of light can be controlled. The intensity of the light emitted through the polarizing plate can be controlled. Since light outside a specific wavelength range is absorbed by 41, the emitted light is, for example, red, blue, The light will have a red or green color.

[0147] In addition to the polarizing plate, for example, a circular polarizing plate can be used. For example, a laminate of a linear polarizing plate and a quarter-wave retardation plate can be used. This makes it possible to reduce the viewing angle dependency of the display of the liquid crystal display device.

[0148] In this example, an element to which the FFS mode is applied is used as the liquid crystal element 307a. Liquid crystal elements using various modes can be used. For example, VA( Vertical Alignment mode, TN (Twisted Neutral c) mode, IPS (In-Plane-Switching) mode, ASM (Axi ally Symmetric aligned Micro-cell) mode, OC B (Optically Compensated Birefringence) mode mode, FLC (Ferroelectric Liquid Crystal) mode, A FLC (AntiFerroelectric Liquid Crystal) mode ,VA-IPS(Vertical Alignment In-Plane-Swit A liquid crystal element to which a shifting mode or the like is applied can be used.

[0149] In addition, the liquid crystal display device 200 is a normally black type liquid crystal display device, for example, a vertical alignment ( A transmissive liquid crystal display device using a vertical alignment (VA) mode may be used. The MVA (Multi-Domain Vertical Alignment) mode mode, PVA (Patterned Vertical Alignment) mode, A SV mode etc. can be used.

[0150] The liquid crystal element is an element that controls the transmission or non-transmission of light by the optical modulation action of liquid crystal. The optical modulation of liquid crystals is caused by the electric field applied to the liquid crystal (horizontal electric field, vertical electric field The liquid crystal used in the liquid crystal element is , Thermotropic Liquid Crystal, Low Molecular Weight Liquid Crystal, Polymer Liquid Crystal, Polymer Dispersed Liquid Crystal (PDLC:Po lymer Dispersed Liquid Crystal), Ferroelectric Liquid Crystal, Antiferroelectric Liquid Crystal Ferroelectric liquid crystals can be used. These liquid crystal materials can exhibit blue phase, cone phase, etc. depending on the conditions. esteric phase, smectic phase, cubic phase, chiral nematic phase, isotropic phase, etc. show.

[0151] As the liquid crystal material, either positive type liquid crystal or negative type liquid crystal may be used as appropriate. The optimum liquid crystal material may be selected according to the mode and design to be used.

[0152] Here, above the substrate 361, there is a substrate that is directly touched by a detection object such as a finger or a stylus. In this case, a polarizing plate or a circular polarizing plate may be provided between the substrate 361 and the substrate. In that case, it is preferable to provide a protective layer (ceramic coat, etc.) on the substrate. The protective layer is preferably made of, for example, silicon oxide, aluminum oxide, yttrium oxide, Inorganic insulating materials such as yttria-stabilized zirconia (YSZ) can be used. The substrate may be made of tempered glass. The tempered glass may be tempered by an ion exchange method, an air-cooling tempering method, or the like. The material is subjected to physical or chemical treatment and has its surface subjected to compressive stress. can be done.

[0153] FIG. 9 shows a cross-sectional view of two adjacent sub-pixels. These are sub-pixels that different pixels have.

[0154] In FIG. 9, the conductive layer 352 and the wiring 352a of the liquid crystal element 307b in the subpixel are The capacitance formed between the conductive layer 352 and the liquid crystal element 307a of the adjacent subpixel The capacitance formed between the wiring 352a and the sensor 352 is used to detect the proximity or touch of an object to be detected. The wiring 352a is disposed between the two conductive layers 352. In the liquid crystal display device according to one embodiment of the present invention, the conductive layer 352 is a common electrode of the liquid crystal element and a detection element. It serves as both a patient electrode and a patient electrode.

[0155] In this manner, in the liquid crystal display device according to one embodiment of the present invention, the electrodes constituting the liquid crystal element are Since the electrode also serves as a component of the element, the manufacturing process can be simplified and the manufacturing cost can be reduced. Furthermore, the liquid crystal display device can be made thinner and lighter.

[0156] In addition, if the capacitance between the electrode of the detection element and the signal line is too large, the time constant of the electrode of the detection element Therefore, a flattening mechanism is installed between the transistor and the electrode of the detector element. It is preferable to provide an insulating layer having a function to reduce the capacitance between the electrodes of the sensing element and the signal line. For example, in FIG. 9, an insulating layer 319 is provided as an insulating layer having a planarizing function. By providing the conductive layer 319, the capacitance between the conductive layer 352 and the signal line can be reduced. As described above, the time constant of the electrode of the detection element can be reduced by The smaller the pole time constant, the higher the detection sensitivity and the higher the detection accuracy. It is possible.

[0157] For example, the time constant of the electrodes of the sensing element is greater than 0 seconds and is 1×10 -4 seconds or less, preferably 0 seconds or more 5×10 -5 seconds or less, more preferably greater than 0 seconds and 5×10 -6 seconds or less , more preferably greater than 0 seconds and 5×10 -7 seconds or less, more preferably greater than 0 seconds and ×10 -7 It is preferable that the time constant is less than 1×10 -6 By setting the delay time to less than 2 seconds, noise It is possible to achieve high detection sensitivity while suppressing the influence of noise.

[0158] Next, materials that can be used for each component of the liquid crystal display device of the present embodiment will be described in detail. This section provides an explanation of the above.

[0159] <Substrate> There is no particular restriction on the material of the substrate of the liquid crystal display device 200. It is necessary to have heat resistance sufficient to withstand heat treatment. For example, glass substrates, ceramic A substrate made of silicon or silicon carbide may be used. Single crystal semiconductor substrates, polycrystalline semiconductor substrates, and compound semiconductor substrates such as silicon germanium It is also possible to use a substrate, an SOI substrate, or the like, on which a semiconductor element is provided. The substrates 311 and 361 may be made of the following: When using a glass substrate, the 6th generation (1500mm x 1850mm) and 7th generation (187 0mm×2200mm), 8th generation (2200mm×2400mm), 9th generation (240 10th generation (2950mm x 3400mm) and large area substrates By using the same, a large display device can be manufactured. In addition, a flexible substrate may be used, and a transistor, a capacitor, and the like may be formed directly on the flexible substrate. stomach.

[0160] By using a thin substrate, the liquid crystal display device can be made lighter and thinner. Furthermore, by using a substrate having a thickness sufficient to provide flexibility, a flexible liquid crystal display device can be obtained. This can be achieved.

[0161] In addition to these, various substrates can be used as the substrates 311 and 361 to form transistors. The type of the substrate is not limited to a specific one. Examples include plastic substrates, metal substrates, stainless steel substrates, and stainless steel Substrate with tungsten foil, Tungsten substrate, Substrate with tungsten foil, Flexible Examples include a flexible substrate, a laminated film, a paper containing fibrous materials, or a base film. Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, or Soda lime glass, etc. An example of a flexible substrate is polyethylene terephthalate. Polyethylene naphthalate (PET), Polyethersulfone (PES) ), or flexible synthetic resins such as acrylic. Examples of laminated films include polypropylene, polyester, polyvinyl fluoride, Examples of the base film include polyester, polyamide, and polyvinyl chloride. In particular, semiconductor substrates, single crystal substrates, etc. By manufacturing transistors using a silicon-on-insulator (SOI) substrate, the characteristics, size, Or, to manufacture transistors with less variation in shape, high current capacity, and small size. When a circuit is constructed using such transistors, the circuit can consume low power. This allows for increased power and higher circuit integration.

[0162] In addition, a transistor is formed on one substrate, and then the transistor is transferred to another substrate. The transistor may be placed on one substrate and the transistor may be placed on another substrate. Examples include substrates on which the above-mentioned transistors can be formed, as well as paper substrates, ceramic substrates, etc. Fan board, stone board, wood board, cloth board (natural fibers (silk, cotton, hemp), synthetic fibers (nylon , polyurethane, polyester) or regenerated fibers (acetate, cupra, rayon, (including recycled polyester), leather substrates, or rubber substrates. By using this, it is possible to form transistors with good characteristics and transistors with low power consumption. It is possible to manufacture devices that are less likely to break, have heat resistance, and are lighter or thinner.

[0163] <Transistors using polysilicon films> The structure of a transistor included in a liquid crystal display device according to one embodiment of the present invention is not particularly limited. For example, a planar type transistor or a staggered type transistor may be used. Alternatively, the transistor may be a top-gate or bottom-gate transistor. Either of these transistor structures may be used. Alternatively, gate electrodes may be provided above and below the channel. It may be possible.

[0164] In addition, transistors using polysilicon films have a high field effect mobility, making them suitable for a variety of applications. Various functional circuits, such as shift register circuits, level shifter circuits, buffer circuits, sampling circuits, etc. It is possible to form a switching circuit.

[0165] <Insulating layer> Insulating films that can be used for various insulating layers, overcoats, spacers, etc. in liquid crystal display devices The insulating material may be an organic insulating material or an inorganic insulating material. For example, acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyamide isopropyl Examples of the resin include mide resin, siloxane resin, benzocyclobutene resin, and phenol resin. The inorganic insulating layer may be a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a nitride silicon oxide film, aluminum oxide film, hafnium oxide film, yttrium oxide film, zirconium oxide film gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, Examples include a cerium oxide film and a neodymium oxide film.

[0166] <Conductive layer> In addition to the gate, source, and drain of the transistor, various wirings and Conductive layers such as electrodes are made of aluminum, titanium, chromium, nickel, copper, yttrium, and di Metals such as zinc, molybdenum, silver, tantalum, or tungsten, or materials mainly composed of these The alloy may be used as a single layer or a multilayer structure. A two-layer structure in which a titanium film is laminated on a tungsten film, a two-layer structure in which a titanium film is laminated on a tungsten film, A two-layer structure with a copper film laminated on a molybdenum film, and an alloy film containing molybdenum and tungsten A two-layer structure with a copper film laminated on top of a copper-magnesium-aluminum alloy film. Layer structure: titanium film or titanium nitride film, and aluminum layer on top of the titanium film or titanium nitride film. A three-layer structure in which a titanium film or a copper film is laminated and a titanium film or a titanium nitride film is further formed on the aluminum film or a copper film. A molybdenum film or a molybdenum nitride film is formed on the molybdenum film or the molybdenum nitride film. An aluminum film or a copper film is laminated on top of it, and a molybdenum film or a molybdenum nitride film is further laminated on top of it. For example, when the conductive layer has a three-layer structure, the first and third layers are The layers are titanium, titanium nitride, molybdenum, tungsten, and molybdenum and tungsten. A film made of an alloy containing molybdenum, an alloy containing molybdenum and zirconium, or molybdenum nitride is formed. The second layer is made of a low-resistance material such as copper, aluminum, gold, silver, or an alloy of copper and manganese. It is preferable to form a film made of indium tin oxide or tungsten oxide. Indium oxide containing tungsten oxide, indium zinc oxide containing titanium oxide Indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, Alternatively, a conductive material having light transmitting properties, such as indium tin oxide doped with silicon dioxide, may be used. .

[0167] Note that the conductive layer may be formed by using a method for controlling the resistivity of an oxide semiconductor.

[0168] The structures and methods described in this embodiment mode may be appropriately combined with the structures and methods described in other embodiment modes. They can be used in combination.

[0169] (Embodiment 2) In this embodiment, a structure of a display device according to one embodiment of the present invention will be described with reference to FIGS. I will explain with reference to the above.

[0170] FIG. 10 illustrates a structure of a display device according to one embodiment of the present invention. FIG. 10(B) is an exploded view illustrating a part of the pixel configuration shown in FIG. 10(A). FIG. 10(C) is a schematic diagram of a pixel shown in FIG. 10(A). FIG. 10(D) is a cross-sectional view taken along line Y1-Y2. FIG.

[0171] FIG. 11 illustrates a structure of a display device according to one embodiment of the present invention. 11(A) is a cross-sectional view of a pixel taken along line Y1-Y2 in FIG. 11(B). FIG. 2 is a cross-sectional view illustrating a configuration of a part of the pixel shown in A).

[0172] FIG. 12 illustrates a structure of a display device according to one embodiment of the present invention. 12(A) is a cross-sectional view of a pixel taken along a line Y1-Y2 shown in FIG. 12B) is a cross-sectional view for explaining a configuration of a part of the pixel shown in FIG.

[0173] FIG. 13 illustrates a structure of a display device according to one embodiment of the present invention. 13(A) is a cross-sectional view of a pixel taken along a line Y1-Y2 shown in FIG. 13B is a cross-sectional view for explaining a configuration of a part of the pixel shown in FIG.

[0174] FIG. 14 illustrates a structure of a display device according to one embodiment of the present invention. 14(A) is a cross-sectional view of a pixel taken along a line Y1-Y2 shown in FIG. 14B is a cross-sectional view for explaining a configuration of a part of the pixel shown in FIG.

[0175] FIG. 15 illustrates a structure of a display device according to one embodiment of the present invention. 15(B) is a top view of the display device shown in FIG. 15(A), and FIG. 15(B) illustrates a part of a pixel of the display device shown in FIG. 15(C) is a schematic diagram illustrating a cross-sectional configuration of the display device shown in FIG. FIG.

[0176] 16 and 17 are cross-sectional views for explaining the configuration of a display device. A) at the cutting line X1-X2, the cutting line X3-X4, and the cutting line X5-X6 in FIG. 15(B) 16(B) and 16(C) are cross-sectional views each illustrating a part of FIG. 16(A). FIG.

[0177] FIG. 17 shows the cross-sectional view of the cross-section line X7-X8 in FIG. 15(B) and the cross-sectional view of the cross-section line X9-X10 in FIG. 15(A). FIG.

[0178] FIG. 18 is a bottom view illustrating a portion of a pixel that can be used in the display device shown in FIG. FIG.

[0179] FIG. 19 is a circuit diagram illustrating a configuration of a pixel circuit included in a display device of one embodiment of the present invention.

[0180] In this specification, variables whose values ​​are integers of 1 or more may be used as symbols. For example, let (p) contain a variable p whose value is an integer greater than or equal to 1, and let any of the components up to p be It may be used as part of a code to specify a number. For example, the variable m, which takes an integer value of 1 or more, and (m, n) including variable n is treated as a code that identifies one of the maximum m × n components. It may be used in parts.

[0181] <Display device configuration example 1.> The display device 700 described in this embodiment has a pixel 702(i,j) (FIG. 15( See A).

[0182] Pixel configuration example 1. Pixel 702(i,j) includes a functional layer 520, a first display element 750(i,j) and a second display element 750(i,j). The sensor 50 includes a sensor element 550(i,j) (see FIG. 15(A)).

[0183] The functional layer 520 includes pixel circuits 530(i,j), and the functional layer 520 includes the first display element 75 10(i,j) and second display element 550(i,j).

[0184] The pixel circuit 530(i,j) includes a first display element 750(i,j) and a second display element 55 0(i,j) is electrically connected to

[0185] Configuration example 1 of first display element 750(i,j) The first display element 750(i,j) has a first electrode 751(i,j), a second electrode 752, The liquid crystal layer 753 and the reflective film 751B are provided (see FIG. 10B and FIG. 11B). In addition, the first display element 750(i,j) reflects the intensity of the light reflected by the reflective film 751B. It has the function to control.

[0186] The second electrode 752 applies an electric field in a direction intersecting the thickness direction of the layer 753 containing a liquid crystal material to the first electrode 752. 10B and 11. For example, a comb-like shape can be used for the second electrode 752. Therefore, an electric field in a direction intersecting the thickness direction of the layer 753 containing a liquid crystal material is applied to the first electrode 751 ( i, j) or, for example, to operate in VA-IPS mode. The display element can be used as the first display element.

[0187] The appearance of the second electrodes 752 having a comb-like shape arranged in a matrix is ​​shown in FIG. ) as shown in

[0188] The reflective film 751B has a shape that does not block the light emitted by the second display element 550(i,j). For example, a shape having a region 751H that does not block light can be used for the reflective film 751B. can.

[0189] Configuration example 1 of second display element 550(i,j) The second display element 550(i,j) has a function of emitting light. , j) in a part of the range in which the display using the first display element 750(i, j) can be seen The first display element is disposed so that a display using the second display element can be visually recognized (see FIG. 11(A)).

[0190] In this way, the first display element is used to control the intensity of the light reflected by the reflective film, thereby enabling display. Alternatively, the second display element can be used to supplement the display using the first display element. As a result, a novel display device with excellent convenience and reliability can be provided. Cut.

[0191] Pixel configuration example 2. In the display device 700 described in this embodiment, the pixel 702(i,j) is an optical element 56 0 and a coating film 565.

[0192] Optical element configuration example 1. The optical element 560 has a light transmitting property and includes a first region 560A, a second region 56 0B and a third region 560C (see FIGS. 10(B), 10(C) and 11(B)). see).

[0193] The first region 560A includes an area to be supplied with light. For example, the first region 560A includes a second The light is provided from display element 550(i,j).

[0194] The second region 560B includes a region in contact with the covering film 565 .

[0195] The third region 560C has a function of emitting a part of the light. It has an area equal to or smaller than the area of ​​the area supplied with light A.

[0196] <Examples of coating film configuration> The coating film 565 has a reflectivity to light, and the coating film 565 reflects a part of the light to form a third region. For example, the second display element 550(i,j) emits The light can be reflected toward the third region 560C. As shown in FIG. 1, a portion of the light incident on the optical element 560 from the first region 560A is incident on the second region 560B. 560B and exits from the third region 560C. (See Figure 11(B)).

[0197] Configuration example 2 of first display element 750(i,j) Reflective film 751B has a shape that does not block the light emitted by third region 560C.

[0198] In this way, the first display element is used to control the intensity of the light reflected by the reflective film, thereby enabling display. Alternatively, the second display element can be used to supplement the display using the first display element. Alternatively, the light supplied to the first region can be efficiently emitted from the third region. Alternatively, the light supplied to the first region can be collected and emitted from the third region. For example, when a light-emitting element is used for the second display element, the area of ​​the light-emitting element can be set to be smaller than that of the third region. Alternatively, a light emitting element having an area larger than that of the third region may be provided. The light can be focused on the third region, or the third region can maintain the intensity of the light emitted. While the current density flowing through the light emitting element can be reduced, the reliability of the light emitting element can be improved. For example, an organic EL element or a light emitting diode can be used as the light emitting element. As a result, a novel display device with excellent convenience and reliability can be provided.

[0199] Pixel configuration example 3. In addition, the pixel 702(i,j) includes a part of the functional layer 520 and a first display element 750(i,j). ) and a second display element 550(i,j) (see FIG. 15(C)).

[0200] <Functional layer 520> The functional layer 520 includes a first conductive layer, a second conductive layer, an insulating film 501C, and a pixel circuit 530 (i , j). The functional layer 520 also includes an optical element 560 and a covering film 565 (FIG. 11 16(A) and 16(A). Note that the pixel circuit 530(i,j) is, for example, a transistor. Includes StaM.

[0201] The functional layer 520 includes a first display element 750(i,j) and a second display element 550(i,j). 16C). The first display element 750(i,j) and the area sandwiched between the first and second display elements 550(i,j) is less than 30 μm, preferably 1 0 μm, more preferably less than 5 μm.

[0202] This brings the second display element 550(i,j) closer to the first display element 750(i,j). Alternatively, a display using the first display element 750(i,j) and a display using the second display element 750(i,j) can be combined. The parallax occurring between the display using element 550(i,j) can be reduced. Or , a display using an adjacent pixel, for example pixel 702(i,j+1), is performed by the second display element 5 50(i,j) can be used to make it less susceptible to distortion. For example, the display color using pixel 702(i,j+1) and the second display element 550(i, j) can be used to make it difficult for the display colors to be mixed. 0(i,j) can suppress the attenuation of the light emitted by the display device. Or, the thickness of the display device can be reduced. Or, the display device can be curved. This can make it easier to

[0203] The functional layer 520 includes an insulating film 528, an insulating film 521A, an insulating film 521B, and an insulating film 51 8 and an insulating film 516.

[0204] 《Pixel circuit》 The pixel circuit 530(i,j) includes a first display element 750(i,j) and a second display element 55 It has the function of driving 0(i,j) (see Figure 19).

[0205] In this way, for example, the first pixel circuit can be formed using the same process. and a second display element that displays using a method different from that of the first display element. Specifically, a reflective display element is used as the first display element, and the consumption It is possible to reduce power consumption, or to display images with high contrast in bright outdoor lighting. Alternatively, a second display element that emits light can be used to illuminate the image in a dark area. Alternatively, the first display element and the second display element can be formed by using an insulating film. The present invention provides a method for suppressing diffusion of impurities between the second display elements or between the first display elements and the pixel circuits. As a result, a novel display device with excellent convenience and reliability can be provided. can.

[0206] Switches, transistors, diodes, resistors, inductors, or capacitors are arranged in the pixel circuit. path 530(i,j).

[0207] For example, one or more transistors can be used as switches. Multiple transistors connected in series, multiple transistors connected in series, and a combination of series and parallel Multiple transistors connected together can be used in a switch.

[0208] For example, pixel circuit 530(i,j) includes signal line S1(j), signal line S2(j), and scanning line G1(i), scanning line G2(i), wiring CSCOM and wiring ANO are electrically connected ( (See FIG. 19.) Although not shown, the conductive layer 512A is electrically connected to the signal line S1(j). will be done.

[0209] The pixel circuit 530(i,j) includes a switch SW1 and a capacitance element C11 (see FIG. 19). .

[0210] The pixel circuit 530(i,j) includes a switch SW2, a transistor M, and a capacitance element C12. include.

[0211] For example, a gate electrode electrically connected to the scanning line G1(i) and a signal line S1(j) and a first electrode electrically connected to the first transistor. can be done.

[0212] The capacitor C11 is electrically connected to a second electrode of the transistor used in the switch SW1. The first electrode is electrically connected to the wiring CSCOM, and the second electrode is electrically connected to the wiring CSCOM.

[0213] For example, a gate electrode electrically connected to the scanning line G2(i) and a signal line S2(j) and a first electrode electrically connected to the first transistor, can be done.

[0214] The transistor M is electrically connected to a second electrode of the transistor used in the switch SW2. The gate electrode is electrically connected to the line ANO, and a first electrode is electrically connected to the line ANO.

[0215] In addition, a transistor having a conductive layer sandwiched between a semiconductor film and a gate electrode is also used. For example, the same gate electrode of the transistor M may be used. A conductive layer electrically connected to a wiring capable of supplying the same potential is used as the conductive layer. This can be done.

[0216] The capacitor C12 is electrically connected to a second electrode of the transistor used in the switch SW2. a first electrode electrically connected to the first electrode of the transistor M; and a second electrode electrically connected to the first electrode of the transistor M. has.

[0217] The first electrode of the first display element 750(i,j) is connected to a transistor used for the switch SW1. The first electrode of the first display element 750(i,j) is electrically connected to the second electrode of the first display element 750(i,j). The electrode 752 of the first display element 72 is electrically connected to the wiring VCOM1. It can drive 50.

[0218] The electrode 551(i,j) of the second display element 550(i,j) is connected to the first 2, and the electrode 552 of the second display element 550(i,j) is electrically connected to the conductive layer VC OM2. This allows the second display element 550(i,j) to be driven. This can be done.

[0219] Insulating Film 501C The insulating film 501C has a region sandwiched between the first conductive layer and the second conductive layer. 01C has an opening 591A (see FIG. 17).

[0220] First Conductive Layer The first conductive layer is electrically connected to the first display element 750(i,j). It is electrically connected to a first electrode 751(i,j) of a first display element 750(i,j). Note that the first electrode 751(i,j) can be used as a first conductive layer.

[0221] Second Conductive Layer The second conductive layer has an area that overlaps with the first conductive layer. The second conductive layer has an opening 591A. For example, the conductive layer 512B is electrically connected to the second conductive layer. It can be used.

[0222] By the way, the second conductive layer and the insulating film 501C are electrically connected through the opening 591A. The first conductive layer connected to the through electrode can be called a through electrode.

[0223] The second conductive layer is electrically connected to the pixel circuit 530(i,j). For example, the pixel circuit Source or drain electrode of the transistor used in switch SW1 of 530(i,j) A conductive layer functioning as the second conductive layer can be used as the second conductive layer.

[0224] Configuration example 2 of second display element 550(i,j) In addition, the second display element 550(i,j) is electrically connected to the pixel circuit 530(i,j). (See FIG. 16(A) and FIG. 19). The second display element 550(i, j) has a functional layer 52. The second display element 550(i,j) has a function of emitting light toward the direction of the insulating film 550. The light emitting element has a function of emitting light toward an opening provided in the insulating film 501C or the insulating film 501C. .

[0225] The second display element 550(i,j) displays the image using the first display element 750(i,j). The display using the second display element 550(i,j) is visible in a part of the visible range. For example, the intensity of reflected external light is controlled to display image information. The direction in which external light is incident on and reflected by a single display element 750(i,j) is indicated by a dashed arrow in the figure. 17. Also, the display using the first display element 750(i,j) is visible. The direction in which the second display element 550(i,j) emits light is indicated by a solid arrow in a part of the range. The above is shown in the figure (see FIG. 16(A)).

[0226] As a result, in a part of the area where the display using the first display element can be viewed, Alternatively, the display device may be changed in position to display the second display element. The user can see the display without any distortion. Multiplying the object color to be displayed by the light source color displayed by the light emitted by the second display element Or, it is possible to display the object color and the light source color in a pictorial manner. Thus, it is possible to provide a novel display device that is highly convenient and reliable.

[0227] For example, the second display element 550(i,j) has an electrode 551(i,j) and an electrode 552. and a layer 553(j) containing a light-emitting material (see FIG. 16(A)).

[0228] Electrode 552 has an overlapping area with electrode 551(i,j).

[0229] A layer 553(j) containing a light-emitting material is sandwiched between the electrode 551(i,j) and the electrode 552. It has an area where

[0230] The electrode 551(i,j) is electrically connected to the pixel circuit 530(i,j) at the connection portion 522. The electrode 552 is electrically connected to the conductive layer VCOM2 (FIG. 16( A) and Figure 19).

[0231] <<Insulating film 521, insulating film 528, insulating film 518, insulating film 516, etc.>> The insulating film 521 is disposed between the pixel circuit 530(i,j) and the second display element 550(i,j). It has a pinched area.

[0232] For example, a laminated film can be used for the insulating film 521. For example, the insulating film 521A, the insulating A stacked film of the film 521B and the insulating film 521C can be used for the insulating film 521.

[0233] The insulating film 528 has a region sandwiched between the insulating film 521 and the substrate 570, and is a second display. An opening is provided in the area overlapping with element 550(i,j). The insulating film 528 formed by this process prevents short-circuiting between the electrodes 551(i, j) and 552. .

[0234] Note that a single layer film or a stacked layer film can be used for the insulating film 518. For example, The insulating film 518A and the insulating film 518B can be used as the insulating film 518. The insulating film 518 may include the insulating film 518A1 and the insulating film 518A2.

[0235] The insulating film 518 has a region sandwiched between the insulating film 521 and the pixel circuit 530(i, j). can.

[0236] The insulating film 516 has a region sandwiched between the insulating film 518 and the pixel circuit 530(i,j). can.

[0237] The display device 700 may also include an insulating film 501B. The insulating film 501B is It has an opening 592B (see FIG. 16(A)).

[0238] The opening 592B includes an area that overlaps with the conductive layer 511B.

[0239] <Display device configuration example 2.> The display device 700 described in this embodiment has a display area 231 (see FIG. 15). see).

[0240] 《Display area 231》 The display area 231 includes a group of pixels 702(i,1) to 702(i,2), which are not shown in detail. 02(i,n) and another group of pixels 702(1,j) through 702(m,j). 15, pixel 7 has a scanning line G1(i) and a signal line S1(j). 02(i,j). Also, the scanning line G2(i), the wiring CSCOM, and the wiring AN O and signal line S2(j) (see FIG. 15 and FIG. 19). Note that i is 1 or more and m where j is an integer between 1 and n, and m and n are integers of 1 or greater.

[0241] A group of pixels 702(i,1) through 702(i,n) is a pixel 702(i,j). A group of pixels 702(i,1) to 702(i,n) are arranged in the row direction ( The electrodes are arranged in a direction indicated by an arrow R1.

[0242] Another group of pixels 702(1,j) through 702(m,j) are pixels 702(i, Another group of pixels 702(1,j) to 702(m,j) are arranged in the row direction. The electrodes are arranged in a column direction (the direction indicated by the arrow C1 in the drawing) that intersects with the electrodes.

[0243] The scanning line G1(i) and the scanning line G2(i) correspond to a group of a plurality of pixels 70 arranged in the row direction. 2(i,1) to pixels 702(i,n).

[0244] The signal line S1(j) and the signal line S2(j) are connected to another group of a plurality of pixels arranged in the column direction. The pixel electrodes 702(1,j) through 702(m,j) are electrically connected to the pixels 702(1,j) through 702(m,j).

[0245] <Display device configuration example 3.> The display device 700 described in this embodiment is a multi-color display device having a function of displaying colors with different hues. Alternatively, it may have multiple pixels capable of displaying colors of different hues. Using the pixels, a color that cannot be displayed by each pixel can be displayed by additive color mixing. can be done.

[0246] In addition, when a plurality of pixels capable of displaying colors with different hues are used for color mixing, Each pixel can be called a subpixel. Specifically, pixel 702(i,j) can be referred to as a subpixel. Pixel 702(i,j), pixel 702(i,j+1), and pixel 702(i , j+2) can be grouped together and referred to as pixel 703(i, k) (see FIG. 22(A)). )reference).

[0247] For example, a sub-pixel that displays blue, a sub-pixel that displays green, and a sub-pixel that displays red may be arranged in a single pixel. The pair can be used for pixel 703(i,k).

[0248] Also, for example, a sub-pixel for displaying cyan, a sub-pixel for displaying magenta, and a sub-pixel for displaying yellow may be used. The set of sub-pixels shown can be used for pixel 703(i,k).

[0249] In addition, for example, a sub-pixel that displays white can be added to the above set and used in the pixel. Cut.

[0250] Also, for example, a first display element 750(i,j) that displays cyan and a second display element 750(i,j) that displays blue a subpixel including a second display element 550(i,j), a first display element 75 displaying yellow, 0(i,j+1) and a subpixel having a second display element 550(i,j+1) that displays green. A first display element 750(i,j+2) displays magenta and a second display element 750(i,j+3) displays red. A set of sub-pixels including a display element 550(i,j+2) is used for pixel 703(i,k). As a result, the first display element 750(i,j) to the first display element 75 The display using 0(i,j+2) can be brightened. Or, the second display element 55 The display using the first display element 550(i,j) to the second display element 550(i,j+2) is made vivid. This can be done.

[0251] <Display device configuration example 4.> The display device 700 described in this embodiment is provided with a driving circuit GD or a driving circuit SD. This can be seen in FIG. 15(A).

[0252] <Drive circuit GD> The driving circuit GD has a function of supplying a selection signal based on control information.

[0253] For example, based on control information, a frequency of 30 Hz or more, preferably 60 Hz or more It has a function to supply a selection signal to one scanning line at a time. This allows smooth display of moving images. It is possible.

[0254] For example, based on control information, the frequency is less than 30 Hz, preferably less than 1 Hz, and more preferably It has a function to supply a selection signal to one scan line at a frequency of less than once per minute. A still image can be displayed with the browser suppressed.

[0255] The display device may also have multiple driving circuits. For example, the display device 700B has a driving circuit GDA and a driving circuit GDB (see FIG. 15).

[0256] In addition, for example, when a plurality of driving circuits are provided, the frequency with which the driving circuits GDA supply the selection signal is The frequency at which the driver circuit GDB supplies the selection signal can be made different from the frequency at which the driver circuit GDB supplies the selection signal. In the embodiment, a selection signal is supplied to one area for displaying a still image at a frequency higher than the frequency at which a selection signal is supplied to the other area for displaying a moving image. A selection signal can be supplied to another area to be displayed, thereby preventing flickering in one area. This allows the display of still images with reduced distortion and smooth moving images in other areas. Cut.

[0257] <Drive circuit SD> The drive circuit SD includes a drive circuit SD1 and a drive circuit SD2, which are not shown in the figure. The circuit SD1 has a function of supplying an image signal based on the information V11, and the driving circuit SD2 It has a function of supplying an image signal based on information V12 (see FIG. 15).

[0258] The drive circuit SD1 or the drive circuit SD2 has a function of generating an image signal and a function of transmitting the image signal to a Specifically, the polarity of the pixel circuit is This allows the device to drive, for example, a liquid crystal display element. This can be done.

[0259] For example, various sequential circuits such as shift registers can be used for the driver circuit SD. do.

[0260] For example, an integrated circuit in which the driving circuits SD1 and SD2 are integrated is Specifically, an integrated circuit formed on a silicon substrate can be used as a driver circuit SD can be used.

[0261] For example, the COG (Chip on Glass) method or the COF (Chip on Fi The lm) method can be used to mount integrated circuits on the terminals. can be used to mount an integrated circuit to the terminals.

[0262] <Display device configuration example 5.> The display device 700 described in this embodiment includes a functional layer 720, a terminal 519B, a substrate 570, substrate 770, bonding layer 505, sealing material 705, structure KB1, functional film 770P, machine The filter 770 is provided with a filter film 770D and the like (see FIG. 16(A) or FIG. 17).

[0263] <Functional Layer 720> The display device described in this embodiment also includes a functional layer 720. The functional layer 720 includes a region sandwiched between the plate 770 and the insulating film 501C. , an insulating film 771, and a colored film CF1 (see FIG. 16A or FIG. 17).

[0264] The light-shielding film BM has an opening in a region overlapping with the first display element 750(i,j).

[0265] The colored film CF1 is a region sandwiched between the substrate 770 and the first display element 750(i, j). Equipped with.

[0266] The insulating film 771 is a region sandwiched between the colored film CF1 and the layer 753 containing a liquid crystal material or a light-shielding region. The colored film CF is sandwiched between the film BM and the layer 753 containing a liquid crystal material. The unevenness caused by the thickness of the light-shielding film BM or the colored film CF1 can be flattened. Diffusion of impurities from the liquid crystal material layer 752 to the layer 753 containing a liquid crystal material can be suppressed.

[0267] A single layer or a stacked layer can be used for the insulating film 771. The insulating film 771B can be used as the insulating film 771.

[0268] Terminal 519B The display device described in this embodiment also has a terminal 519B (see FIG. 16A). .

[0269] The terminal 519B includes a conductive layer 511B. The terminal 519B is, for example, a signal line S1(j ) is electrically connected to

[0270] <<Board 570, Board 770>> The display device described in this embodiment further includes a substrate 570 and a substrate 770 .

[0271] The substrate 770 has an area overlapping the substrate 570. It has areas that sandwich the functional layer 520 .

[0272] The substrate 770 has an area that overlaps with the first display element 750(i,j). A material that is less prone to folding may be used in this area.

[0273] 《Joining layer 505, sealing material 705, structure KB1》 In addition, the display device described in this embodiment includes the bonding layer 505, the sealing material 705, and the structure K. B1.

[0274] The bonding layer 505 has an area sandwiched between the functional layer 520 and the substrate 570. 0 and the substrate 570.

[0275] The encapsulant 705 has an area sandwiched between the functional layer 520 and the substrate 770. 0 and the substrate 770.

[0276] The structure KB1 has a function of providing a predetermined gap between the functional layer 520 and the substrate 770. .

[0277] 《Functional membrane 770PA, Functional membrane 770PB, Functional membrane 770D, etc.》 The display device described in this embodiment includes a functional film 770PA, a functional film 770PB, and a functional film 770D.

[0278] The functional film 770PA and the functional film 770PB overlap the first display element 750(i,j). It has an area.

[0279] The functional film 770D has an area that overlaps with the first display element 750(i, j). 70D is disposed so as to sandwich the substrate 770 between the first display element 750(i,j) and the This allows, for example, the first display element 750(i,j) to diffuse the light reflected by the first display element 750(i,j). can.

[0280] <Examples of components> The display device 700 includes a substrate 570, a substrate 770, a structure KB1, a sealing material 705, or a bonding layer. Has 505.

[0281] The display device 700 also includes a functional layer 520, an optical element 560, a coating film 565, and an insulating film 52. 1 or insulating film 528.

[0282] The display device 700 also includes a signal line S1(j), a signal line S2(j), a scanning line G1(i), It has a scanning line G2(i), a wiring CSCOM or a wiring ANO.

[0283] The display device 700 also includes a first conductive layer or a second conductive layer.

[0284] The display device 700 also includes a terminal 519B or a conductive layer 511B.

[0285] The display device 700 also includes a pixel circuit 530(i,j) or a switch SW1.

[0286] The display device 700 also includes a first display element 750(i,j), a first electrode 751(i,j), j) It has a reflective film, an opening, a layer including a liquid crystal material 753 or a second electrode 752.

[0287] The display device 700 also includes an alignment film AF1, an alignment film AF2, a colored film CF1, a light-shielding film BM, It has an insulating film 771, a functional film 770P, or a functional film 770D.

[0288] The display device 700 also includes a second display element 550(i,j), an electrode 551(i,j), The layer 553(j) includes an electrode 552 or a layer including a light-emitting material.

[0289] The display device 700 also includes an insulating film 501B or an insulating film 501C.

[0290] The display device 700 also includes a driving circuit GD or a driving circuit SD.

[0291] "Board 570" A material having sufficient heat resistance to withstand the heat treatment during the manufacturing process can be used for the substrate 570, etc. For example, a material having a thickness of 0.7 mm or less and 0.1 mm or more can be used for the substrate 570. Specifically, a material that has been polished to a thickness of about 0.1 mm can be used.

[0292] For example, 6th generation (1500mm x 1850mm), 7th generation (1870mm x 220 0mm), 8th generation (2200mm x 2400mm), 9th generation (2400mm x 280 10th generation (2950mm x 3400mm) and other large glass substrates. This can be used for the plate 570, etc. This makes it possible to manufacture a large display device. .

[0293] The substrate 570 may be made of an organic material, an inorganic material, or a composite material of an organic material and an inorganic material. For example, inorganic materials such as glass, ceramics, and metals can be used for the substrate 570. It is possible.

[0294] Specifically, non-alkali glass, soda-lime glass, potash glass, crystal glass, Aluminosilicate glass, tempered glass, chemically tempered glass, quartz, sapphire, etc. are used as the substrate 57 0, etc. Specifically, inorganic oxide films, inorganic nitride films, or inorganic oxynitrides A film or the like can be used for the substrate 570. For example, a silicon oxide film or a silicon nitride film A silicon oxynitride film, an aluminum oxide film, or the like can be used for the substrate 570, for example. Stainless steel or aluminum may be used for the substrate 570 or the like.

[0295] For example, single crystal semiconductor substrates made of silicon or silicon carbide, polycrystalline semiconductor substrates, silicon A compound semiconductor substrate such as germanium, an SOI substrate, etc. can be used as the substrate 570, etc. This allows semiconductor elements to be formed on the substrate 570 or the like.

[0296] For example, organic materials such as resin, resin film, or plastic may be used for the substrate 570. Specifically, polyester, polyolefin, polyamide, polyimide, poly A resin film or plate such as recarbonate or acrylic resin is used as the substrate 570. It is possible.

[0297] For example, a metal plate, a thin glass plate, or a film of an inorganic material is laminated to a resin film, etc. A composite material such as a fibrous or particulate metal, a gallium nitride, or the like can be used for the substrate 570. A composite material in which glass or inorganic materials are dispersed in a resin film is used for the substrate 570, etc. For example, a fibrous or particulate resin or organic material can be dispersed in an inorganic material. Composite materials can be used for substrates such as 570 .

[0298] In addition, a single layer material or a multi-layered material can be used for the substrate 570, etc. For example, a material that is laminated with a base material and an insulating film that prevents the diffusion of impurities contained in the base material is called a substrate. The plate 570 can be used for the glass and the diffusion of impurities contained in the glass. One or more layers selected from a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, etc., which prevent A material in which several films are laminated can be used for the substrate 570. Alternatively, a material in which resin and resin are laminated can be used. A silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like is used to prevent the diffusion of impurities through the A laminated material may be used for the substrate 570, etc.

[0299] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate A resin film such as acrylic resin, a resin plate, or a laminate material is used as the substrate 570. There can be.

[0300] Specifically, polyester, polyolefin, polyamide (nylon, aramid, etc.), Polyimide, polycarbonate, polyurethane, acrylic resin, epoxy resin or silicone A material containing a resin having a siloxane bond, such as siloxane, can be used for the substrate 570. do.

[0301] Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (P EN), polyethersulfone (PES), acrylic, etc. are used for the substrate 570, etc. Or, cycloolefin polymer (COP), cycloolefin copolymer ( COC) etc. can be used.

[0302] Also, paper or wood can be used for the substrate 570 etc.

[0303] For example, a flexible substrate can be used as the substrate 570 .

[0304] Note that a method of forming a transistor, a capacitor, or the like directly on a substrate can be used. In addition, for example, a transistor or a capacitor may be formed on a substrate for a process that has heat resistance to heat applied during the manufacturing process. A method of forming a transistor or a capacitor element, and transferring the formed transistor or capacitor element to a substrate 570, etc. This allows, for example, a transistor or a capacitor to be formed on a flexible substrate. It is possible to form a quantum device, etc.

[0305] "Board 770" For example, the materials that can be used for the substrate 570 can be used for the substrate 770. For example, a material having light transmitting properties selected from the materials usable for the substrate 570 is used for the substrate 7. 70. Alternatively, an anti-reflection film of, for example, 1 μm or less is formed on one surface. The above-mentioned materials can be used for the substrate 770. Specifically, three or more dielectric layers can be used. A material having at least 5 layers, more preferably at least 15 layers, can be used for the substrate 770. This makes it possible to suppress the reflectance to 0.5% or less, preferably 0.08% or less. Alternatively, a material with suppressed birefringence selected from materials that can be used for the substrate 570 can be used for the substrate 770.

[0306] For example, aluminosilicate glass, tempered glass, chemically tempered glass, sapphire, etc. This can be suitably used for the substrate 770 arranged on the side closer to the user of the device. This makes it possible to prevent the display device from being damaged or scratched during use.

[0307] For example, cycloolefin polymer (COP), cycloolefin copolymer (COC ), triacetyl cellulose (TAC), or other resin film is preferably used for the substrate 770. This allows the weight to be reduced. The frequency of occurrence of damage etc. can be reduced.

[0308] In addition, for example, a material having a thickness of 0.7 mm or less and 0.1 mm or more is used for the substrate 770. Specifically, a polished substrate can be used to reduce the thickness. This allows the functional film 770D to be disposed close to the first display element 750(i, j). As a result, the image blur can be reduced and the image can be displayed clearly.

[0309] 《Structure KB1》 For example, organic materials, inorganic materials, or composite materials of organic and inorganic materials are used for the structure KB1, etc. This allows a predetermined interval to be provided between the components that sandwich the structure KB1, etc. This can be done.

[0310] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate polysiloxane, acrylic resin, or a mixture of a plurality of resins selected from these. A composite material or the like can be used for the structure KB1. Also, a photosensitive material can be used to form the structure. It may be possible to do so.

[0311] "Sealing material 705" Use of inorganic materials, organic materials, or composite materials of inorganic and organic materials as the sealing material 705, etc. can be done.

[0312] For example, an organic material such as a heat-melting resin or a hardening resin may be used for the sealing material 705. This can be done.

[0313] For example, a reaction-curing adhesive, a light-curing adhesive, a heat-curing adhesive, or / and an anaerobic adhesive. An organic material such as the above can be used for the sealant 705 or the like.

[0314] Specifically, epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide Mido resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyrate) Adhesives containing EVA (ethylene vinyl acetate) resin, etc. are used as sealing materials 705, etc. can be used.

[0315] 《Joining layer 505》 For example, the material that can be used for the sealant 705 can be used for the bonding layer 505 .

[0316] "Insulating film 521" For example, insulating inorganic materials, insulating organic materials, or insulating composites containing inorganic and organic materials. The composite material can be used for the insulating film 521 and the like.

[0317] Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like, or a film selected from these A laminated material in which a plurality of layers are laminated can be used for the insulating film 521. For example, a silicon oxide film can be used. silicon film, silicon nitride film, silicon oxynitride film, aluminum oxide film, etc., or a film made of these A film containing a laminated material in which a plurality of selected layers are laminated can be used as the insulating film 521 or the like.

[0318] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate polysiloxane, acrylic resin, or a combination of multiple resins selected from these. A layer material, a composite material, or the like can be used for the insulating film 521. The insulating layer 11 may be formed using a material that satisfies the above requirements.

[0319] This allows, for example, the steps resulting from various structures overlapping the insulating film 521 to be flattened. It is possible.

[0320] Optical Element 560 The optical element 560 has an optical axis Z (see FIG. 10C). The optical axis Z is aligned along the first region 560A. The visible light passes through the center of the region where the visible light is supplied and the center of the third region 560C. 560B has an inclination θ of 45° or more with respect to a plane perpendicular to the optical axis Z, preferably 75° or more The second region 560B has a slope with a slope θ of 5° or less. has an overall inclination of approximately 60° with respect to a plane perpendicular to the optical axis Z.

[0321] The second region 560B is provided with the inclined portion through the visible light of the first region 560A. The first region 560 is provided in a range of 0.05 μm to 0.2 μm from the edge of the region. When the second display element 550(i,j) is in contact with A, visible light of the first region 560A is supplied. The area that can supply visible light to the second display element 550(i,j) is For example, the slope of the second region 560B shown is equal to the area of ​​the first region 56 It is located at a distance d from the edge of the area supplied with 0 A of visible light.

[0322] In addition, the area of ​​the first region 560A to which visible light is supplied is the area of ​​the pixel 702(i,j). (See FIG. 10(D)).

[0323] The third region 560C has an area that is less than or equal to 10% of the area of ​​pixel 702(i,j).

[0324] The reflective film 751B has an area that is 70% or more of the area of ​​the pixel 702(i,j).

[0325] The sum of the area of ​​the first region 560A to which visible light is supplied and the area of ​​the reflective film 751B is , which is larger than the area of ​​pixel 702(i,j).

[0326] For example, a rectangular pixel that is 27 μm wide and 81 μm long is 2187 μm 2 The first Area 560A 324μm 2 The third region 560C provides visible light to the area of ​​the 81μm 2 The reflective film 751B has an area of ​​1894 μm 2 It has an area of.

[0327] In this configuration, the area of ​​the first region 560A to which visible light is supplied is equal to the pixel surface area. This is equivalent to approximately 14.8% of the product.

[0328] The area of ​​the reflective film 751B corresponds to approximately 86.6% of the area of ​​the pixel.

[0329] The sum of the area of ​​the first region 560A to which visible light is supplied and the area of ​​the reflective film 751B is , 2218μm 2 It is.

[0330] This allows the second region to focus light incident on the first region at various angles. As a result, a novel display device with excellent convenience and reliability can be provided. .

[0331] It should be noted that multiple materials can be used for the optical element 560. For example, materials with refractive index differences of 0. A number of materials may be used for the optical element 560, selected to be in the range of 2 or less. This makes it possible to suppress reflection or scattering inside the optical element. The loss can be suppressed.

[0332] Also, various shapes can be used for the optical element 560, such as a circle or a polygon. can be used for the shape of a cut surface perpendicular to the optical axis of the optical element 560. A curved surface may be used in the second region 560B of the optical element 560.

[0333] For example, the cross section of the optical element 560 having a rectangular shape perpendicular to the optical axis is The cross-sectional view is shown in FIG. 23(A-1), FIG. 23(B-1) or FIG. 23(C-1). A perspective view is shown in FIG. 23(A-2), FIG. 23(B-2) or FIG. 23(C-2).

[0334] For example, a cross section along the optical axis of an optical element 560 having a circular shape for the cross section perpendicular to the optical axis is The side view is shown in Fig. 23(D-1), Fig. 23(E-1) or Fig. 23(F-1). The perspective views are shown in FIG. 23(D-2), FIG. 23(E-2) or FIG. 23(F-2).

[0335] 《Coating film 565》 A single layer film or a laminated film can be used for the coating film 565. For example, a light-transmitting film and A material having a laminate of a film having reflectivity and a reflecting property can be used for the covering film 565.

[0336] For example, inorganic materials such as oxide films, fluoride films, and sulfide films are used as the light-transmitting films. It is possible.

[0337] For example, metals can be used for the reflective film. Specifically, a material containing silver can be used. For example, a material containing silver and palladium or silver and Materials containing copper can be used for the reflective film. In addition, a multi-layered film of dielectric materials has reflectivity. It can be used as a membrane.

[0338] "Insulating Film 528" For example, the material that can be used for the insulating film 521 can be used for the insulating film 528, etc. Specifically, a film containing polyimide and having a thickness of 1 μm can be used for the insulating film 528.

[0339] Insulating Film 501B For example, the material that can be used for the insulating film 521 can be used for the insulating film 501B. Also, for example, a material having a function of supplying hydrogen can be used for the insulating film 501B. do.

[0340] Specifically, a material containing silicon and oxygen and a material containing silicon and nitrogen are stacked. For example, the material can be used for the insulating film 501B by releasing hydrogen when heated. A material having a function of supplying the released hydrogen to other components is used for the insulating film 501B. Specifically, hydrogen that was taken in during the manufacturing process can be released by heating or the like, and other components can be used. The insulating film 501B can be made of a material having a function of supplying the same to the insulating film 501B.

[0341] For example, silicon and oxide formed by chemical vapor deposition using silane or the like as a source gas. A film containing silicon can be used for the insulating film 501B.

[0342] Specifically, a material containing silicon and oxygen with a thickness of 200 nm to 600 nm is A material containing silicon and nitrogen and having a thickness of about 200 nm is laminated on the insulating film 501B. It can be used.

[0343] Insulating Film 501C For example, the material that can be used for the insulating film 521 can be used for the insulating film 501C. Specifically, a material containing silicon and oxygen can be used for the insulating film 501C. This makes it possible to suppress the diffusion of impurities into the pixel circuit, the second display element, or the like.

[0344] For example, a 200 nm thick film containing silicon, oxygen, and nitrogen is used as the insulating film 501C. It is possible.

[0345] 《Wiring, terminals, conductive layers》 A conductive material can be used for wiring, etc. , signal line S1(j), signal line S2(j), scanning line G1(i), scanning line G2(i), wiring C It can be used for the SCOM, the wiring ANO, the terminal 519B, the conductive layer 511B, or the like.

[0346] For example, inorganic conductive materials, organic conductive materials, metals, conductive ceramics, etc. are used for wiring, etc. can be used.

[0347] Specifically, aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum A metal selected from the group consisting of tungsten, nickel, iron, cobalt, palladium, and manganese. The elements can be used for wiring, etc. Alternatively, an alloy containing the above-mentioned metal elements can be used for wiring, etc. It can be used for wiring, etc. In particular, copper and manganese alloys can be etched by wet etching. It is suitable for fine processing.

[0348] Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a titanium nitride film on a titanium A two-layer structure in which a tungsten film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, A two-layer structure in which a tungsten film is laminated on a tungsten film or a tungsten nitride film, a titanium film, A three-layer structure in which an aluminum film is layered on the titanium film, and a titanium film is then formed on top of that. etc. can be used for wiring etc.

[0349] Specifically, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide Conductive oxides such as zinc oxide doped with gallium can be used for wiring and the like.

[0350] Specifically, a film containing graphene or graphite can be used for wiring or the like.

[0351] For example, a film containing graphene oxide is formed and reduced. As a result, a film containing graphene can be formed. and a method using a reducing agent.

[0352] For example, a film containing metal nanowires can be used for wiring. Nanowires including the above nanowires can be used.

[0353] Specifically, a conductive polymer can be used for wiring and the like.

[0354] For example, the terminal 519B and the flexible printed circuit board are connected to each other using the conductive material ACF1. The FPC1 can be electrically connected.

[0355] {First conductive layer, second conductive layer} For example, a material that can be used for wiring or the like can be used for the first conductive layer or the second conductive layer. can be done.

[0356] In addition, the first electrode 751(i,j) or a wiring or the like can be used as the first conductive layer.

[0357] In addition, the source electrode or drain electrode of a transistor that can be used for the switch SW1 The conductive layer 512B functioning as an electrode, a wiring, or the like can be used as the second conductive layer.

[0358] <<First display element 750(i,j)>> For example, a display element having a function of controlling reflection or transmission of light is designated as the first display element 750 ( For example, a liquid crystal element and a polarizing plate may be combined, or a shutter may be used. The display element may be a MEMS display element using a light-shielding method or a MEMS display element using an optical interference method. By using a reflective display element, the power consumption of the display device can be reduced. For example, the microcapsule method, the electrophoresis method, the electrowetting method, etc. The display element that is currently used can be used as the first display element 750(i,j). A reflective liquid crystal display element can be used for the first display element 750(i,j).

[0359] For example, IPS (In-Plane-Switching) mode, TN (Twist ed Nematic) mode, FFS (Fringe Field Switching g) Mode, ASM (Axially Symmetric aligned Micro o-cell) mode, OCB (Optically Compensated Bi efringence mode, FLC (Ferroelectric Liquid Crystal Crystal) mode, AFLC (AntiFerroelectric Liqui d) Crystal mode) There can be.

[0360] In addition, for example, a vertical alignment (VA) mode, specifically, an MVA (Multi-Domain n Vertical Alignment) mode, PVA(Patterned V Electrical Alignment mode, ECB (Electrically Controlled Birefringence mode, CPA (Continuo us Pinwheel Alignment) mode, ASV (Advanced S The liquid crystal element can be driven using a driving method such as super-view mode. There can be.

[0361] The first display element 750(i,j) includes a first electrode, a second electrode, a layer including a liquid crystal material, and The layer containing the liquid crystal material has an orientation controlled by a voltage between the first electrode and the second electrode. For example, the liquid crystal material may be oriented in the thickness direction (also called the vertical direction) of the layer containing the liquid crystal material. ) and an electric field in a direction crossing the vertical direction (also called the horizontal or diagonal direction) is applied to the liquid crystal material to orient it. It can be used for the electric field to control.

[0362] Layer 753 containing liquid crystal material For example, thermotropic liquid crystal, low molecular weight liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal, ferroelectric Liquid crystal, antiferroelectric liquid crystal, etc. can be used in the layer containing the liquid crystal material. Liquid crystals that exhibit phases such as smectic, cubic, chiral nematic, and isotropic phases. Alternatively, a liquid crystal material exhibiting a blue phase can be used.

[0363] For example, a negative type liquid crystal material can be used in the layer containing the liquid crystal material.

[0364] For example, 1.0×10 13 Ω cm or more, preferably 1.0×10 14 Ω cm or more, More preferably, it is 1.0×10 15 A liquid crystal material with a resistivity of Ω·cm or more is called a liquid crystal material. This is used for the layer 753 containing the first display element 750(i,j). Alternatively, flickering of the first display element 750(i,j) can be suppressed. Alternatively, the frequency of rewriting the first display element 750(i,j) can be reduced. can be done.

[0365] <<First electrode 751(i,j)>> For example, a material used for wiring or the like can be used for the first electrodes 751(i,j). In practice, a reflective film can be used for the first electrode 751(i,j). A material in which a conductive layer having an opening and a reflective film having an opening are laminated is formed as the first electrode 751(i, j ) can be used.

[0366] 《Reflective film》 For example, a material that reflects visible light can be used for the reflective film. Materials that can be used for the reflective film include, for example, materials containing silver and palladium, or materials containing silver and copper. Materials including the above can be used for the reflective film.

[0367] The reflective film reflects light transmitted through the layer 753 containing the liquid crystal material, for example. In this case, the first display element 750 can be a reflective liquid crystal element. Materials with uneven surfaces can be used for the reflective film. This allows the incoming light to be reflected in various directions. It can be reflected in various directions to display white.

[0368] For example, the first conductive layer or the first electrode 751(i,j) can be used as a reflective film. do.

[0369] For example, a region where a light-transmitting conductive layer 751A is sandwiched between a layer 753 containing a liquid crystal material The film provided can be used as the reflective film 751B (see FIG. 20(A)).

[0370] For example, the region sandwiched between the layer 753 containing a liquid crystal material and the conductive layer 751C having light-transmitting properties A film having the above structure can be used as the reflective film 751B (see FIG. 20(B)).

[0371] For example, a conductive layer 751A having a light-transmitting property and a conductive layer 751C having a light-transmitting property are sandwiched between the conductive layer 751A and the conductive layer 751C. A film having a region where the reflection is performed can be used as the reflective film 751B (see FIG. 20(C)).

[0372] For example, a film having reflectivity to visible light may be used for the first electrode 751(i,j). (See Figure 20(D)).

[0373] The reflective film has an area 751H that does not block the light emitted by the second display element 550(i,j). The shape is formed as shown in FIG. 21(A) to FIG. 21(C).

[0374] For example, a shape having one or more openings can be used for the reflective film. Shapes such as polygons, rectangles, ellipses, circles, or crosses can be used for the region 751H. Also, thin stripes, slits, and checkered patterns can be used for the region 751H. Cut.

[0375] If the ratio of the total area of ​​the region 751H to the total area of ​​the reflective film is too large, the first display element The display using child 750(i,j) becomes dark.

[0376] Also, if the ratio of the total area of ​​the region 751H to the total area of ​​the reflective film is too small, The display using the display element 550(i,j) becomes dark. There are cases where the reliability of 0(i,j) is compromised.

[0377] For example, the region 751H provided in the pixel 702(i,j+1) is ) on a straight line extending in the row direction (the direction indicated by the arrow R1 in the drawing) passing through the region 751H provided in (See FIG. 21A). Or, for example, the pixel 702(i+1,j) The region 751H provided in the pixel 702(i,j) is a region in the column direction that passes through the region 751H provided in the pixel 702(i,j). (See FIG. 21(B)).

[0378] For example, the region 751H provided in the pixel 702(i,j+2) is 21A, the pixel electrodes 751H are disposed on a straight line extending in the row direction and passing through the region 751H provided in the pixel 751. In addition, the region 751H provided in the pixel 702(i,j+1) is j) and region 751H provided in pixel 702(i,j+2). The electrodes are disposed on a straight line perpendicular to the straight line between the electrodes.

[0379] Or, for example, the region 751H provided in the pixel 702(i+2,j) is the pixel 702( i, j) are arranged on a straight line extending in the column direction (FIG. 21 For example, the region 751H provided in the pixel 702(i+1,j) is The region 751H provided in the pixel 702(i,j) and the region 751H provided in the pixel 702(i+2,j) The second region 751H is disposed on a straight line perpendicular to the straight line between the first region 751H and the second region 751H.

[0380] A second display element is disposed so as to overlap the area that does not block light arranged in this manner. As a result, the second element of another pixel adjacent to the one pixel is spaced apart from the second display element of the one pixel. Alternatively, the second display element of the pixel adjacent to the first pixel may be provided with a second display element of the other pixel. A display element that displays a color different from the color displayed by the second display element may be provided. Or, the difficulty of arranging a plurality of display elements that display different colors adjacent to each other is reduced. As a result, a novel display device with excellent convenience and reliability can be provided. This can be done.

[0381] Alternatively, the end portion of the reflective film is cut short so that the region 751H is formed. It can be used (see FIG. 21(C)). Specifically, in the column direction (indicated by the arrow C1 in the figure), A shape in which the end is cut off so that the length (direction) of the wire is shortened can be used.

[0382] Second Electrode 752 For example, a material that can be used for wiring or the like can be used for the second electrode 752. For example, a material having translucency selected from materials that can be used for wiring, etc. is used as the second The electrode 752 can be used.

[0383] For example, a conductive oxide, a metal film or a metal nanowire that is thin enough to transmit light, etc. The electrode 752 can be used.

[0384] Specifically, a conductive oxide containing indium can be used for the second electrode 752. Alternatively, a metal thin film having a thickness of 1 nm to 10 nm can be used for the second electrode 752. Also, metal nanowires including silver can be used for the second electrode 752.

[0385] Specifically, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide , zinc oxide doped with gallium, zinc oxide doped with aluminum, etc., are applied to the second electrode 7 52 can be used.

[0386] <<Alignment film AF1, alignment film AF2>> For example, a material containing polyimide or the like can be used for the alignment film AF1 or the alignment film AF2. Specifically, the liquid crystal material is rubbed so that it is oriented in a predetermined direction, or the liquid crystal material is light-aligned. Materials formed using orientation techniques can be used.

[0387] For example, a film containing a soluble polyimide can be used for the alignment film AF1 or AF2. This allows the temperature required for forming the alignment film AF1 or AF2 to be As a result, when forming the alignment film AF1 or the alignment film AF2, the thickness of the alignment film AF1 or the thickness of the alignment film AF2 can be reduced. This can reduce damage to the formation of the

[0388] 《Colored film CF1》 A material that transmits light of a predetermined color can be used for the colored film CF1. CF1 can be used, for example, in color filters.

[0389] For example, a material that transmits blue light, a material that transmits green light, or a material that transmits red light. The colored film CF1 can be made of a material that can reduce the light passing through the colored film CF1. The spectrum width can be narrowed, resulting in a more vivid display.

[0390] Also, for example, a material that absorbs blue light, a material that absorbs green light, or a material that absorbs red light may be used. A material that transmits yellow light can be used for the colored film CF1. A material that transmits magenta light or a material that transmits cyan light is used for the colored film CF1. This narrows the spectral width of the light absorbed by the colored film CF1. This allows the display to be brighter.

[0391] 《Light blocking film BM》 For example, a material that suppresses light transmission can be used for the light-shielding film BM. The film BM can be used for example as a black matrix.

[0392] Specifically, a resin containing a pigment or a dye can be used for the light-shielding film BM. A resin having carbon black dispersed therein can be used for the light-shielding film.

[0393] Alternatively, inorganic compounds, inorganic oxides, composite oxides including solid solutions of multiple inorganic oxides, etc. may be shielded from light. It can be used for the film BM. Specifically, black chrome film, film containing cupric oxide, copper chloride Alternatively, a film containing tellurium chloride can be used for the light-shielding film BM.

[0394] "Insulating Film 771" For example, the material that can be used for the insulating film 521 can be used for the insulating film 771. For example, polyimide, epoxy resin, acrylic resin, or the like can be used for the insulating film 771. Alternatively, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film The insulating film 771 may be made of a laminate material including a plurality of layers selected from the above. This can be done.

[0395] 《Functional membrane 770P, Functional membrane 770D》 For example, anti-reflection films, polarizing films, retardation films, light diffusion films, or light collecting films. A film or the like can be used for the functional film 770P or the functional film 770D.

[0396] Specifically, a film containing a dichroic dye can be used for the functional film 770P or the functional film 770D. Alternatively, a material having a columnar structure with an axis aligned in a direction intersecting the surface of the substrate can be prepared by: This can be used for the functional film 770P or the functional film 770D. This allows the light to be guided along the axis. It can be made to transmit light in one direction and scatter light in another.

[0397] In addition, it has an antistatic film that prevents dust from sticking, a water-repellent film that makes it difficult for dirt to stick, and A hard coat film that suppresses the occurrence of scratches associated with the above process can be used for the functional film 770P.

[0398] Specifically, a circularly polarizing film can be used for the functional film 770P. The film can be used for the functional film 770D.

[0399] Second display element 550(i,j) For example, a display element having a function of emitting light is used as the second display element 550(i,j). Specifically, organic electroluminescence elements, inorganic electroluminescence elements, Sense element, light emitting diode or QDLED (Quantum Dot LED), etc. can be used for the second display element 550(i,j).

[0400] For example, a light-emitting organic compound can be used in the layer 553(j) containing the light-emitting material. do.

[0401] For example, quantum dots can be used in layer 553(j) containing luminescent material. This allows the emission of light with a narrow half-width and vivid colors.

[0402] For example, a laminated material stacked to emit blue light, a laminated material stacked to emit green light, A laminated material that is layered to emit red light or a laminated material that is layered to emit red light is called a luminous material. A layer 553(j) containing the material may be used.

[0403] For example, a long strip of laminated material is arranged in the column direction along the signal line S2(j), The insulating layer 553(j) may be formed of a fluorine-containing material.

[0404] In addition, for example, a laminated material that is laminated so as to emit white light may be used as a material containing a luminescent material. In particular, a fluorescent material that emits blue light may be used for layer 553(j). A layer containing a light-emitting material and a layer containing a material other than a fluorescent material that emits green and red light, or The laminated material is a layer including a material other than a fluorescent material that emits yellow light, and a luminescent layer. A material may be used for layer 553(j).

[0405] For example, a material that can be used for wiring or the like can be used for the electrodes 551(i, j). do.

[0406] For example, the material is selected from materials that can be used for wiring, etc., and has transparency to visible light. Any material that satisfies the above requirements can be used for the electrodes 551(i,j).

[0407] Specifically, conductive oxides or conductive oxides containing indium, indium oxide, indium Indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide doped with gallium, etc. Alternatively, a metal thin enough to transmit light can be used for the electrode 551(i,j). A film can be used for the electrodes 551(i,j) or a film that transmits some of the light and blocks other parts of the light. A partially reflective metal film can be used for the electrodes 551(i,j). A resonator structure can be provided in the second display element 550(i,j). It is possible to extract light of certain wavelengths more efficiently than other light.

[0408] For example, a material that can be used for wiring or the like can be used for the electrode 552. In this case, a material that is reflective to visible light can be used for the electrode 552 .

[0409] <Drive circuit GD> Various sequential circuits such as shift registers can be used for the driving circuit GD. For example, A transistor MD, a capacitor element, etc. can be used in the driver circuit GD. A transistor that can be used for the switch SW1 or that is manufactured in the same process as the transistor M. A transistor including a semiconductor film that can be formed on the semiconductor film can be used.

[0410] For example, a transistor having a different configuration from that used for the switch SW1 may be used. It can be used for MD.

[0411] The same structure as that of the transistor M can be used for the transistor MD.

[0412] "Transistor" For example, a semiconductor film that can be formed in the same process is used as a transistor for a driver circuit and a pixel circuit. It can be used for star.

[0413] For example, bottom-gate transistors or top-gate transistors are driven. The transistors can be used for transistors in driving circuits or transistors in pixel circuits.

[0414] By the way, for example, a bottom-gate transistor using amorphous silicon as a semiconductor The production line for bottom-gate transistors uses oxide semiconductors as the semiconductor. It can be easily modified into a manufacturing line. The production line for the transistors is a top-gate type that uses oxide semiconductors as the semiconductor. Both modifications can be easily made to existing production lines. can.

[0415] For example, a transistor that uses a semiconductor containing a group 14 element as a semiconductor film can be used. Specifically, a semiconductor containing silicon can be used for the semiconductor film. For example, Semiconductors such as single crystal silicon, polysilicon, microcrystalline silicon, or amorphous silicon The transistor used in the body membrane can be used.

[0416] The temperature required to fabricate a transistor using polysilicon as a semiconductor is This is lower than that of transistors that use crystalline silicon.

[0417] In addition, the field effect mobility of transistors that use polysilicon as a semiconductor is This is higher than that of transistors that use silicon as a semiconductor, improving the aperture ratio of pixels. In addition, the pixels can be arranged with extremely high resolution, and the gate drive circuit and the As a result, the components constituting the electronic device can be The number of items can be reduced.

[0418] The reliability of transistors that use polysilicon as a semiconductor is higher than that of transistors that use amorphous silicon as a semiconductor. It is superior to transistors used in the body.

[0419] Also, transistors using compound semiconductors can be used. A semiconductor containing arsenic can be used for the semiconductor film.

[0420] In addition, transistors using organic semiconductors can be used. Organic semiconductors including cesene or graphene can be used for the semiconductor film.

[0421] For example, a transistor using an oxide semiconductor for a semiconductor film can be used. Specifically, an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc A semiconductor can be used for the semiconductor film. This will be explained in detail in form 4.

[0422] For example, leakage current in the off state may occur when amorphous silicon is added to the semiconductor film. A transistor smaller than the transistor used in the present embodiment can be used. A transistor using a semiconductor for a semiconductor film can be used.

[0423] This allows the development of pixel circuits that use transistors with amorphous silicon semiconductor films. In comparison with the conventional method, the pixel circuit can hold an image signal for a longer period of time. Specifically, the selection signal should be kept below 30 Hz, preferably at a frequency of 100 Hz, while suppressing flicker. It is preferable to supply the power at a frequency of less than 1 Hz, and more preferably less than once per minute. It is possible to reduce fatigue that accumulates in a user of an information processing device having the pixel circuit. Therefore, the power consumption associated with driving can be reduced.

[0424] For example, the semiconductor film 508, the conductive layer 504, the conductive layer 512A, and the conductive layer 512B are included. A transistor can be used for the switch SW1 (see FIG. 16(B)). The film 506 includes a region sandwiched between a semiconductor film 508 and a conductive layer 504 .

[0425] The conductive layer 504 has a region overlapping with the semiconductor film 508. The insulating film 506 has a function of a gate insulating film.

[0426] The conductive layer 512A and the conductive layer 512B are electrically connected to the semiconductor film 508. 512A has either the function of a source electrode or the function of a drain electrode, and the conductive layer 512B It has the other of the function of a source electrode or the function of a drain electrode.

[0427] In addition, a transistor having a conductive layer 524 is used as a transistor of a driver circuit or a pixel circuit. The conductive layer 524 can be used as a semiconductor layer between the conductive layer 504 and the conductive layer 524 (see FIG. 16B). The insulating film 516 has a region sandwiching the conductive film 508. 504. Also, for example, a wiring that supplies the same potential as the conductive layer 504 is provided. A conductive layer 524 may be electrically connected to the line.

[0428] For example, a 10 nm thick film containing tantalum and nitrogen and a 300 nm thick film containing copper A conductive layer in which these are stacked can be used as the conductive layer 504. 506, a region is provided in which a film containing tantalum and nitrogen is sandwiched between the region.

[0429] For example, a 400 nm thick film containing silicon and nitrogen and a 400 nm thick film containing silicon, oxygen and nitrogen A 200 nm thick film including the insulating film 506 and a laminated material can be used for the insulating film 506. The film containing silicon and nitrogen is between the semiconductor film 508 and the semiconductor film 508. It has a membrane sandwiching area.

[0430] For example, a 25 nm thick film containing indium, gallium, and zinc is applied to the semiconductor film 508. It can be used.

[0431] For example, a 50 nm thick film containing tungsten and a 400 nm thick film containing aluminum The conductive layer is formed by laminating a film having a thickness of 100 nm and a film containing titanium. The conductive layer 512B can be formed of a film containing tungsten. It has an area that is in contact with 8.

[0432] <Display device configuration example 6.> The structure of a display device according to one embodiment of the present invention will be described with reference to FIG.

[0433] FIG. 12 illustrates a structure of a display device according to one embodiment of the present invention. 12(A) is a cross-sectional view of a pixel taken along a line Y1-Y2 shown in FIG. 12B) is a cross-sectional view for explaining a configuration of a part of the pixel shown in FIG.

[0434] The configuration of the display device described in this configuration example is the same as that shown in FIG. 11 except that a lens 580 is provided. The display device 700 has the same configuration as that of the display device 700 described with reference to FIG. The above description will be used in the following description of the embodiment in which a similar configuration can be used. do.

[0435] The display device described in this embodiment includes a lens 580. The lens 580 is an optical element 560 and the second display element 550(i,j) (FIG. 12(A) and See Figure 12(B)).

[0436] Lens 580 includes a material having a refractive index between 1.5 and 2.5, inclusive, and lens 580 is convex. It is a lens.

[0437] This allows the light emitted by the second display element to be condensed toward the optical axis of the optical element, for example. Alternatively, the light emitted from the second display element can be efficiently utilized. Alternatively, the density of the current flowing through the light-emitting element can be reduced. The area can be increased, or the reliability of the light-emitting element can be improved. For example, In addition, an organic EL element or a light emitting diode can be used as the light emitting element. It is therefore possible to provide a novel display device having excellent performance and reliability.

[0438] For example, a plano-convex lens can be used for lens 580.

[0439] "Lens 580" A plano-convex or bi-convex lens can be used for lens 580 .

[0440] A material that transmits light can be used for the lens 580. Materials with a refractive index below can be used for the lens 580. For example, inorganic materials or An organic material can be used for the lens 580 .

[0441] For example, materials including oxides or sulfides may be used for lens 580 .

[0442] Specifically, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, Niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, indium and tin The lens 580 is made of an oxide containing indium, gallium, and zinc, or an oxide containing indium, gallium, and zinc. Alternatively, zinc sulfide or the like can be used for the lens 580.

[0443] For example, a material containing resin can be used for the lens 580. Resins with fluorine or iodine introduced, resins with heavy metal atoms introduced, resins with aromatic rings introduced The lens 580 can be made of resin containing sulfur or the like. A material containing nanoparticles of a material with a higher refractive index than the resin can be used for the lens 580. Titanium oxide or zirconium oxide, for example, can be used for the nanoparticles.

[0444] <Display device configuration example 7> The structure of a display device according to one embodiment of the present invention will be described with reference to FIG.

[0445] FIG. 13 illustrates a structure of a display device according to one embodiment of the present invention. 13(A) is a cross-sectional view of a pixel taken along a line Y1-Y2 shown in FIG. 13B is a cross-sectional view for explaining a configuration of a part of the pixel shown in FIG.

[0446] The display device described in this configuration example is driven using a guest-host liquid crystal mode. The liquid crystal element that can be used for the first display element 750(i, j) is a bottom gate type. The display device 700 is the same as the display device 700 described with reference to FIG. The same configuration is used. Here, the different parts will be described in detail. The above description is incorporated herein for the parts that can be used.

[0447] The display device described in this embodiment is driven using a guest-host liquid crystal mode. A liquid crystal element capable of displaying the image is used for the first display element 750(i,j). It is possible to provide a reflective display device without using a light source. It can be made easier.

[0448] Layer 753 containing liquid crystal material For example, nematic liquid crystal, thermotropic liquid crystal, low molecular weight liquid crystal, high molecular weight liquid crystal, polymer dispersion A liquid crystal having a cholesteric phase or the like can be used in the layer containing the liquid crystal material. Alternatively, a liquid crystal material exhibiting a blue phase may be used. do.

[0449] For example, the layer 753 containing the liquid crystal material may contain a dichroic dye. Liquid crystal materials that contain photochromic dyes are called guest-host liquid crystals.

[0450] Specifically, the molecule has a large absorbance in the long axis direction and a small absorbance in the short axis direction perpendicular to the long axis direction. A material having a small absorbance can be used for the dichroic dye. A material having a dichroic ratio can be used for the dichroic dye, and more preferably, a dichroic ratio of 20 or more. Any material with a chromatic ratio can be used as the dichroic dye.

[0451] For example, azo dyes, anthraquinone dyes, dioxazine dyes, etc. are used as dichroic dyes. It can be used.

[0452] In addition, two liquid crystal layers containing homogeneously aligned dichroic dyes are aligned perpendicular to each other. A stacked structure for the liquid crystal material can be used for the layer containing the liquid crystal material. It can make the material absorb light more easily, or it can increase the contrast. do.

[0453] In addition, we have also investigated the phase-transition type guest-host liquid crystals and the dispersion of droplets containing guest-host liquid crystals in polymers. The above structure can be used for the layer 753 containing the liquid crystal material.

[0454] <Display device configuration example 8> The structure of a display device according to one embodiment of the present invention will be described with reference to FIG.

[0455] FIG. 14 illustrates a structure of a display device according to one embodiment of the present invention. 14(A) is a cross-sectional view of a pixel taken along a line Y1-Y2 shown in FIG. 14B is a cross-sectional view for explaining a configuration of a part of the pixel shown in FIG.

[0456] The configuration of the display device described in this configuration example is the same as that shown in FIG. 13 except that a lens 580 is provided. The display device 700 has a similar configuration to that of the display device 700 described with reference to FIG.

[0457] <Example of display device operation> The operation of a display device according to one embodiment of the present invention will be described with reference to FIG.

[0458] FIG. 24 illustrates the operation of a display device according to one embodiment of the present invention. 24(A) is a cross-sectional view for explaining the operation state of a part of the pixel shown in FIG. FIG. 24(C) is a cross-sectional view for explaining an operation state different from the operation state shown in FIG. FIG. 25 is a cross-sectional view for explaining an operation state different from the operation state shown in FIG. 24(A) or FIG. 24(B). The direction in which external light is incident on and reflected by the first display element 750(i,j) is indicated by a dashed arrow. The direction in which the second display element 550(i,j) emits light is indicated by the arrows in the figure. This is indicated in the figure using line arrows.

[0459] <<Operation state 1.>> FIG. 24(A) shows an operating state in which the liquid crystal material LC is aligned in the thickness direction of the layer 753 containing the liquid crystal material. For example, an alignment film is used to control the alignment of a liquid crystal material LC.

[0460] For example, when using a circular polarizer, reflective film 751B, and VA-IPS mode, apply an electric field. In this operating state, where no power is applied, dark gradations can be displayed. It is possible to operate the liquid crystal display element of Marie Black.

[0461] Although not shown, for example, a reflective film 751B and a guest-host liquid crystal mode are used. In this case, bright gray scales can be displayed in this operating state where no electric field is applied. In other words, the liquid crystal display device can operate as a normally white liquid crystal display device.

[0462] <<Operation state 2.>> While aligning the liquid crystal material LC in the thickness direction of the layer 753 containing the liquid crystal material, the second display element 5 24(B) shows an operating state in which the second display element 550 (i, j) The light emitted from the structure KB1 passes through the structure KB1 without passing through the layer 753 containing the liquid crystal material. .

[0463] For example, when using a circular polarizer, reflective film 751B, and VA-IPS mode, apply an electric field. While the first display element 750(i,j) in this operating state where no additional power is applied displays a dark gray scale, This allows the display to be performed with high contrast. It can display images, or it can display images in vivid colors.

[0464] <<Operation state 3.>> The operating state in which the liquid crystal material LC is aligned in a direction intersecting the thickness direction of the layer 753 containing the liquid crystal material is As shown in Figure 24(C), for example, the alignment of the liquid crystal material LC is controlled using an electric field.

[0465] For example, when using a circular polarizer, reflective film 751B and VA-IPS mode, The key can be displayed.

[0466] Although not shown, for example, a reflective film 751B and a guest-host liquid crystal mode are used. In this case, dark gradations can be displayed without using a polarizing plate.

[0467] In addition, by providing the electrodes having the comb-like shape shown in FIG. 22 and FIG. 24, The touch sensor shown in embodiment 1 can be easily incorporated into the first display element.

[0468] In addition, the hybrid display method is a method of displaying multiple lights in the same pixel or the same sub-pixel. A hybrid display is a method of displaying characters and / or images using a single pixel. A plurality of lights are displayed in the same pixel or the same sub-pixel included in the display unit, and characters or / and It is a collection that displays images.

[0469] As an example of a hybrid display method, a first light There is a method of displaying the first light and the second light at different timings. In the same subpixel, the same color tone (red, green, or blue, or cyan, magenta, or The first light and the second light (either yellow or red) are displayed simultaneously, and the characters Or / and an image can be displayed.

[0470] As an example of a hybrid display method, a method is used in which reflected light and spontaneous emission are displayed in the same pixel or the same size. There is a method to display the same color tone using reflected light and self-emitting light (e.g., OEL light, LED Light, etc.) can be displayed simultaneously in the same pixel or sub-pixel.

[0471] In the hybrid display method, the pixels are not the same pixel or the same subpixel, but adjacent pixels. A pixel or adjacent sub-pixels may display multiple lights. "Simultaneous display of two lights" means that the first light and the second light are displayed simultaneously to the extent that flicker is not perceptible to the human eye. This refers to displaying a second light for the same period of time. If the human eye does not detect any flicker, then it is considered to be the first light. The display period of the first light and the display period of the second light may be shifted from each other.

[0472] In addition, the hybrid display may include multiple pixels in the same pixel or the same subpixel. It is an assembly having a display element, and each of the multiple display elements displays during the same period. A hybrid display is a display device that uses multiple display elements in the same pixel or in the same subpixel. The active elements include switches, transistors, Thin film transistors, etc. Since active elements are connected to each of the multiple display elements, The display of each of the multiple display elements can be controlled individually.

[0473] Note that one embodiment of the present invention has been described in this embodiment. An embodiment of the present invention will be described below. However, the embodiment of the present invention is not limited to these. That is, various inventive aspects are described in this and other embodiments. Therefore, one embodiment of the present invention is not limited to a specific embodiment. Although an example in which the present invention is applied to a display device has been described, one embodiment of the present invention is not limited thereto. In some cases or depending on the situation, one embodiment of the present invention may not be applied to a display device. For example, one embodiment of the present invention may be applied to a semiconductor device having another function. As one embodiment of the present invention, a channel formation region, a source / drain region, etc. of a transistor Although an example in which an oxide semiconductor is included is described above, one embodiment of the present invention is not limited thereto. In some cases, or depending on the situation, various transistors, The channel forming region of a transistor or the source / drain region of a transistor are formed by various In some cases, or depending on the circumstances, one aspect of the present invention may include Various transistors, channel formation regions of transistors, or transistor soles The source and drain regions are made of, for example, silicon, germanium, silicon germanium, carbon, etc. Silicon carbide, gallium arsenide, aluminum gallium arsenide, indium phosphide, gallium nitride Alternatively, for example, the organic semiconductor may have at least one of In accordance with the present invention, various transistors, transistors A channel formation region of the transistor or a source / drain region of the transistor is formed of an oxide semiconductor. It is not necessary to have it.

[0474] The structures and methods described in this embodiment mode may be appropriately combined with the structures and methods described in other embodiment modes. They can be used in combination.

[0475] (Embodiment 3) In this embodiment, a configuration of a data processing device according to one embodiment of the present invention will be described with reference to FIGS. The following explanation will be given with reference to the above.

[0476] 25 and 26 are diagrams illustrating a configuration of an information processing device according to one embodiment of the present invention. 5(A) is a block diagram of an information processing device, and FIG. 25(B) to FIG. 25(E) are diagrams showing the information processing device. 26(A) to 26(E) are perspective views for explaining the configuration of an information processing device. FIG.

[0477] <Information processing device> The information processing device 5200B described in this embodiment includes an arithmetic device 5210 and an input / output device 5220 (see FIG. 25(A)).

[0478] The arithmetic unit 5210 has a function of receiving operation information, and generates image information based on the operation information. It has the function of supplying

[0479] The input / output device 5220 includes a display unit 5230, an input unit 5240, a detection unit 5250, and a communication unit 5 290, having a function for supplying operation information and a function for receiving image information. The device 5220 has a function of providing detection information, a function of providing communication information, and a function of providing communication information. It has the function of

[0480] The input unit 5240 has a function of supplying operation information. For example, the input unit 5240 It supplies operation information based on the operation of the user of the processing device 5200B.

[0481] Specifically, keyboards, hardware buttons, pointing devices, touch sensors The input unit 5240 can be a voice input device, a gaze input device, or the like.

[0482] The display unit 5230 has a function of displaying a display device and image information. The display device described in Section 1 can be used as the display portion 5230.

[0483] The detection unit 5250 has a function of supplying detection information. For example, It has the function of detecting the surrounding environment and providing the detected information.

[0484] Specifically, illuminance sensors, imaging devices, attitude detection devices, pressure sensors, human presence sensors, etc. It can be used in the knowledge unit 5250.

[0485] The communication unit 5290 has a function of receiving and supplying communication information. It has the function of connecting to other electronic devices or communication networks via wired or wired communication. has functions such as wireless intranet communication, telephone communication, and short-range wireless communication.

[0486] "Configuration example 1 of information processing device" For example, an outer shape along a cylindrical pillar or the like can be applied to the display unit 5230 (see FIG. 25 (See (B)). It also has a function to change the display method according to the illuminance of the usage environment. It has a function to detect the presence of people and change the display content. It can be installed on a pillar, or it can display advertisements or information, etc. It can be used for digital signage, etc.

[0487] "Configuration example 2 of information processing device" For example, it has a function to generate image information based on the trajectory of a pointer used by a user ( See Figure 25(C). Specifically, the diagonal length is 20 inches or more, preferably 40 inches. A display device having a screen size of 1.5 inches or more, more preferably 55 inches or more, can be used. The display devices can be arranged in a single display area. This allows the use of multiple screens, for example, in electronic whiteboards and electronic bulletin boards. It can be used for billboards, electronic signs, etc.

[0488] "Configuration example 3 of information processing device" For example, it has a function to change the display method according to the illuminance of the usage environment (see FIG. 25(D)). ) This can, for example, reduce the power consumption of a smartwatch. For example, the image can be scanned so that it can be used suitably even in an environment with strong external light, such as outdoors on a sunny day. It can be displayed on the smart watch.

[0489] "Configuration example 4 of information processing device" The display unit 5230 has, for example, a curved surface that curves gently along the side surface of the housing (see FIG. 25( Alternatively, the display unit 5230 may include a display device, which may be, for example, a front or side display device. This allows the display to be displayed not only on the front and top of a mobile phone, but also on the Image information can be displayed on the sides and top.

[0490] "Configuration example 5 of information processing device" For example, it has a function to change the display method according to the illuminance of the usage environment (see FIG. 26(A)). ) This can reduce the power consumption of smartphones. The image can be captured on a smartphone so that it can be used effectively even in bright outdoor environments. It can be displayed on the

[0491] "Configuration example 6 of information processing device" For example, it has a function to change the display method according to the illuminance of the usage environment (see FIG. 26(B)). This allows the unit to be used effectively even when exposed to strong outdoor light on a sunny day. The video can then be displayed on a television system.

[0492] "Configuration Example 7 of Information Processing Device" For example, it has a function to change the display method according to the illuminance of the usage environment (see FIG. 26(C)). This allows the device to be used effectively even in environments with strong external light, such as outdoors on a clear day. Thus, the image can be displayed on the tablet computer.

[0493] "Configuration Example 8 of Information Processing Device" For example, it has a function to change the display method according to the illuminance of the usage environment (see FIG. 26(D)). This allows for optimal viewing even in environments with strong external light, such as outdoors on a clear day. Thus, the subject can be displayed on the digital camera.

[0494] "Configuration example 9 of information processing device" For example, it has a function to change the display method according to the illuminance of the usage environment (see FIG. 26(E)). This allows the device to be used effectively even in environments with strong external light, such as outdoors on a clear day. Thus, the image can be displayed on a personal computer.

[0495] (Embodiment 4) [Transistor] The transistor includes a conductive layer functioning as a gate electrode, a semiconductor layer, and a A conductive layer that functions as a drain electrode and a conductive layer that functions as a gate insulating layer. FIG. 13 shows a case where a bottom-gate transistor is used. is doing.

[0496] Note that the structure of a transistor included in a display device of one embodiment of the present invention is not particularly limited. For example, a planar type transistor or a staggered type transistor may be used. Alternatively, the transistor may be an inverted staggered type. Also, the transistor may be a top gate type or a bottom gate type. Alternatively, a gate electrode may be provided above and below the channel. It may be possible.

[0497] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region) If a semiconductor having crystallinity is used, the This is preferable because it is possible to suppress deterioration of the resistor characteristics.

[0498] In addition, the semiconductor material used in transistors must have an energy gap of 2 eV or more. It is preferable to use a metal oxide having a polarization energy of 2.5 eV or more, and more preferably 3 eV or more. A typical example is a metal oxide containing indium, for example, CAC -OS, etc. can be used.

[0499] Metal oxides with a wider band gap and lower carrier density than silicon are used. Due to the low off-state current of the transistor, The accumulated charge can be retained for a long period of time.

[0500] The semiconductor layer may be, for example, indium, zinc, and M (aluminum, titanium, gallium, gel Al, yttrium, zirconium, lanthanum, cerium, tin, neodymium or hafnium The film may be a film represented by an In-M-Zn oxide containing metals such as tungsten and zinc.

[0501] When the metal oxide constituting the semiconductor layer is an In-M-Zn oxide, The atomic ratio of metal elements in the sputtering target used to deposit a film is In≧M It is preferable that Zn≧M is satisfied. The atomic ratios are In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In :M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4. 1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5: The atomic ratio of the semiconductor layers to be formed is preferably 1:8 or the like. This includes a ±40% variation in the atomic ratio of metal elements contained in the ring target.

[0502] The bottom-gate transistor described in this embodiment can reduce the manufacturing process. In addition, by using metal oxide, it is possible to form the film at a lower temperature than polycrystalline silicon. This allows the use of materials with low heat resistance as wiring and electrode materials below the semiconductor layer, and as substrate materials. The range of materials that can be used can be expanded. For example, A glass substrate such as that shown in FIG.

[0503] The semiconductor layer is a metal oxide film having a low carrier density. For example, Carrier density is 1×10 17 / cm 3 Less than or equal to 1×10 15 / cm 3 The following is further Preferably 1 x 10 13 / cm 3Less than or equal to 1×10 11 / cm 3 Below, More preferably, 1×10 10 / cm 3 Less than 1 x 10 -9 / cm 3 More than metal oxide Such metal oxides may be used as pure or substantially pure metal oxides. This results in a low impurity concentration and a low defect level density, resulting in stable characteristics. It can be said that it is a metal oxide having such properties.

[0504] In addition, the semiconductor characteristics and electrical characteristics (field effect) of the required transistors are not limited to these. It is sufficient to use a material with an appropriate composition according to the required properties (e.g., the resultant mobility, threshold voltage, etc.). In order to obtain the semiconductor characteristics of a transistor, the carrier density, impurity concentration, and defect density of the semiconductor layer are determined. It is preferable to appropriately set the density, atomic ratio of metal elements to oxygen, interatomic distance, density, etc. stomach.

[0505] In the metal oxides that make up the semiconductor layer, silicon and carbon, which are group 14 elements, If it is included, oxygen vacancies will increase in the semiconductor layer, causing it to become n-type. The silicon and carbon concentrations in the layer (obtained by secondary ion mass spectrometry) were calculated by 2× 10 18 atoms / cm 3 Less than or equal to 2 x 10 17 atoms / cm 3 The following do.

[0506] In addition, alkali metals and alkaline earth metals generate carriers when combined with metal oxides. This may cause the off-state current of the transistor to increase. Concentrations of alkali metals or alkaline earth metals in the layer obtained by secondary ion mass spectrometry. Degrees, 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 To the following:

[0507] In addition, if the metal oxide that makes up the semiconductor layer contains nitrogen, the electrons that act as carriers This increases the carrier density and makes it easier to become n-type. Transistors using this material tend to be normally-on. The nitrogen concentration obtained by secondary ion mass spectrometry is 5×10 18 atoms / cm 3 below It is preferable to set

[0508] The semiconductor layer may have a non-single crystal structure. The non-single crystal structure may have a non-single crystal structure, for example, a structure in which the crystal orientation is aligned along the c-axis. CAAC-OS (C-Axis Aligned Crystallography) ine Oxide Semiconductor or C-Axis Aligne d and AB-plane Anchored Crystalline Oxi de Semiconductor), including polycrystalline, microcrystalline, or amorphous structures In the non-single crystal structure, the amorphous structure has the highest density of defect states, and the CAAC-OS has the lowest density of defect states. The defect level density is low.

[0509] A metal oxide film with an amorphous structure, for example, has a disordered atomic arrangement and does not have a crystalline component. Alternatively, the amorphous oxide film is, for example, a completely amorphous oxide film having no crystalline portion. .

[0510] Note that the semiconductor layer may be a mixed film having two or more of an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAA C-OS region, and a single crystal structure region. The mixed film may have, for example, a single layer structure including any two or more of the above-described regions, or a laminated structure.

[0511] <Configuration of CAC-OS> Hereinafter, the configuration of CAC (Cloud -Aligned Composite)-OS that can be used for the transistor disclosed in one aspect of the present invention will be described.

[0512] In this specification and the like, a metal oxide is an oxide of a metal in a broad sense. The metal oxide is classified into an oxide insulator, an oxide conductor (including a transparent oxide conductor), and an oxide semiconductor (also simply referred to as Oxide Semiconductor or OS). For example, when a metal oxide is used for the active layer of a transistor, the metal oxide may be referred to as an oxide semiconductor. That is, when described as an OS FET, it can be paraphrased as a transistor having a metal oxide or an oxide semiconductor. In this specification, when a region having a conductor function and a region having a dielectric function are mixed in a metal oxide and the entire metal oxide functions as a semiconductor, it is defined as CAC (Cloud )-Aligned Composite)-OS (Oxide Semiconduct or), or CAC-metal oxide. That is, CAC-OS means, for example, that the elements constituting the oxide semiconductor are 0.5 nm or more in length.

[0513] In this specification, when a region having a conductor function and a region having a dielectric function are mixed in a metal oxide and the entire metal oxide functions as a semiconductor, it is defined as CAC (Cloud -Aligned Composite)-OS(Oxide Semiconduct or), or CAC-metal oxide. or)、又はCAC-metal oxideと定義する。

[0514] つまり、CAC-OSとは、例えば、酸化物半導体を構成する元素が、0.5nm以上 The size of the particles is 10 nm or less, preferably 0.5 nm to 3 nm or less, and is unevenly distributed. In the following, the oxide semiconductor is one of the materials having one or more The element is unevenly distributed, and the region having the element is 0.5 nm or more and 10 nm or less, preferably 0 A mixture of particles with sizes between 0.5 nm and 3 nm, or close to that size, is called a mosaic or patch. It is also called chip-shaped.

[0515] In a region where a specific element is concentrated, the physical properties are determined by the properties of the element. For example, among the elements that make up metal oxides, elements that tend to be insulators are unevenly distributed. On the other hand, among the elements that make up metal oxides, some are relatively conductive. A region where elements that tend to be oxidized are concentrated becomes a conductive region. The regions are mixed in a mosaic pattern, allowing the material to function as a semiconductor.

[0516] In other words, the metal oxide in one embodiment of the present invention is a mixture of materials with different physical properties. matrix composite, or metal matrix composite (metal matrix composite).

[0517] Note that the oxide semiconductor preferably contains at least indium. In addition to these, it is preferable that the element M (M is gallium, aluminum, etc.) is contained. Minium, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron , nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium , hafnium, tantalum, tungsten, magnesium, or the like; or Multiple types) may be included.

[0518] For example, CAC-OS in In-Ga-Zn oxide (In- The Ga-Zn oxide may be specifically referred to as CAC-IGZO. (hereinafter referred to as InO X1 (X1 is a real number greater than 0) or indium zinc oxide compound (hereinafter referred to as In X2 Zinc Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0) ) and gallium oxide (GaO X3 (X3 is a real number greater than 0). ), or gallium zinc oxide (Ga X4 Zinc Y4 O Z4 (X4, Y4, and Z4 are The material is separated into mosaics, and the mosaic is created. Zinc-like InO X1 , or In X2 Zinc Y2 O Z2 The structure in which the ions are uniformly distributed in the film (see below) (Also called cloud-like.)

[0519] In other words, CAC-OS is X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 A composite oxide semiconductor having a structure in which a region in which In this specification, for example, the atomic ratio of In to the element M in the first region is is greater than the atomic ratio of In to the element M in the second region. Assume that the In concentration is higher than in region 2.

[0520] Note that IGZO is a common name and refers to a compound made of In, Ga, Zn, and O. A typical example is InGaO3(ZnO). m1 (m1 is a natural number), or In (1 +x0) Ga (1-x0) O3(ZnO) m0 (-1≦x0≦1, m0 is an arbitrary number) Examples of such crystalline compounds include those that are

[0521] The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a structure in which multiple IGZO nanocrystals have a c-axis orientation and are aligned in the ab plane. is a non-oriented connected crystal structure.

[0522] On the other hand, CAC-OS refers to the material composition of an oxide semiconductor. In a material composition containing Ga, Zn, and O, a nanoparticle-like region in which Ga is the main component is In some areas, nanoparticle regions mainly composed of In were observed, and mosaic-like regions were observed. Therefore, in CAC-OS, the crystal structure is It is an element of this.

[0523] Note that CAC-OS does not include a laminated structure of two or more films with different compositions. For example, a structure consisting of two layers, one containing In as the main component and the other containing Ga as the main component, Not at all.

[0524] In addition, GaO X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 but In some cases, a clear boundary between the region of the main component and the region of the main component may not be observed.

[0525] In addition, when one or more selected from aluminum, silicon, boron, yttrium, copper, barium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium, etc. are included, partially nano-particle regions mainly composed of the element are observed, and partially nano-particle regions mainly composed of In are observed, and they are randomly dispersed in a mosaic pattern.

[0526] <Analysis of CAC-OS> Subsequently, the results of measurements of the oxide semiconductor formed on the substrate using various measurement methods will be described.

[0527] ≪Configuration and Fabrication Method of Samples≫ Hereinafter, nine samples according to one aspect of the present invention will be described. Each sample is fabricated under different conditions of the substrate temperature and the oxygen gas flow rate ratio when forming the oxide semiconductor. Note that the sample

[0528] has a structure including a substrate and an oxide semiconductor on the substrate.

[0529] First, a glass substrate is used as the substrate. Subsequently, using a sputtering device, In-Ga-Zn oxide with a thickness of 100 nm is formed as the oxide semiconductor on the glass substrate. The film formation conditions are such that the pressure in the chamber is 0.6 Pa, and an oxide target (In:Ga:Zn = 4:2:4.1 [atomic ratio]) is used for the target. In addition, 2500 W of AC power is supplied to the oxide target installed

[0530] As a condition for forming an oxide film, the substrate temperature is set to a temperature at which the substrate is not intentionally heated (hereinafter The temperature was set to 130°C, or 170°C. The flow rate ratio of oxygen gas to the mixed gas (hereinafter referred to as oxygen gas flow rate ratio) was set to 10%, 3 Nine samples are prepared by setting the ratio to 0% or 100%.

[0531] <Analysis by X-ray diffraction> In this section, X-ray diffraction (XRD) was performed on nine samples. The results of the measurement are described below. The XRD device used was a Bruker product. D8 ADVANCE was used. The conditions were θ / 2θ scanning, scanning range 15deg. to 50deg., step width 0.02deg. ., the scanning speed was 3.0 deg. / min.

[0532] Figure 27 shows the results of measuring the XRD spectrum using the out-of-plane method. In addition, in Fig. 27, the upper row shows the measurement results for a sample where the substrate temperature during film formation was 170°C. The middle row shows the measurement results for a sample with a substrate temperature of 130°C during film formation, and the lower row shows the film formation The left column shows the results of measurements taken with the substrate temperature at RT. The center column shows the results of measurements taken with the gas flow rate ratio at 10%. The right column shows the results for the sample with a 30% oxygen gas flow rate, and the right column shows the results for the sample with a 100% oxygen gas flow rate. The measurement results are shown below.

[0533] The XRD spectrum shown in FIG. 27 shows that the increase in the substrate temperature during film formation or the increase in the amount of oxygen during film formation By increasing the gas flow rate ratio, the peak intensity around 2θ=31° increases. The peak at 2θ=31° indicates that the c-axis is oriented in a direction substantially perpendicular to the surface on which the film is formed or the upper surface. Crystalline IGZO compounds (CAAC(c-axis aligned crystalli It is also called ne)-IGZO.

[0534] In addition, the XRD spectrum shown in FIG. 27 shows that the substrate temperature during film formation was low or the oxygen gas flow was low. The smaller the ratio, the less clear the peak. In the sample with a small oxygen gas flow rate, the orientation of the ab plane direction and the c axis direction of the measurement area was not observed. I realize that this is not possible.

[0535] Analysis by electron microscope In this section, the samples were prepared at a substrate temperature of RT and an oxygen gas flow rate of 10% during film formation. ,HAADF(High-Angle Annular Dark Field)-ST EM(Scanning Transmission Electron Micros) The results of the observation and analysis using HAADF-ST are described below. Images obtained by EM are also called TEM images.

[0536] Planar images obtained by HAADF-STEM (hereinafter also referred to as planar TEM images), and The results of image analysis of the cross-sectional images (hereinafter also referred to as cross-sectional TEM images) will be described. The TEM images were observed using a spherical aberration correction function. The image was taken using an atomic resolution analytical electron microscope JEM-ARM200F manufactured by JEOL Ltd. The specimen was irradiated with an electron beam having an accelerating voltage of 200 kV and a beam diameter of approximately 0.1 nmφ.

[0537] FIG. 28(A) shows a sample prepared at a substrate temperature of RT during film formation and an oxygen gas flow rate of 10%. FIG. 28(B) shows the relationship between the substrate temperature RT and the oxygen gas flow rate during the film formation. This is a cross-sectional TEM image of a sample prepared with a 10% concentration ratio.

[0538] <Analysis of electron diffraction patterns> In this section, the samples were prepared at a substrate temperature of RT and an oxygen gas flow rate of 10% during film formation. By irradiating the electron beam with a probe diameter of 1 nm (also called nano-beam electron beam), The results of the obtained X-ray diffraction patterns will now be described.

[0539] As shown in FIG. 28(A), the film was formed at a substrate temperature of RT and an oxygen gas flow rate of 10%. In the planar TEM image of the sample, black spots a1, a2, a3, a4, and a5 are The electron beam diffraction pattern shown in FIG. 5 is observed. While irradiating the area, move the area from the 0 second position to the 35 second position at a constant speed. The results of black point a1 are shown in Fig. 28(C), the results of black point a2 are shown in Fig. 28(D), and the results of black point a3 are shown in Fig. 28(E). ), the results for black point a4 are shown in FIG. 28(F), and the results for black point a5 are shown in FIG. 28(G).

[0540] From Fig. 28(C), Fig. 28(D), Fig. 28(E), Fig. 28(F), and Fig. 28(G), A bright area can be observed in a circular (ring-like) pattern. Several spots can be observed.

[0541] In addition, as shown in FIG. 28(B), when the substrate temperature RT during film formation and the oxygen gas flow rate ratio were 10%, In the cross-sectional TEM image of the prepared sample, black spots b1, b2, b3, b4, and Observe the electron diffraction pattern indicated by black spot b5. The results of black spot b1 are shown in Figure 28(H), and black spot b The results of point b2 are shown in Fig. 28(I), the results of point b3 are shown in Fig. 28(J), and the results of point b4 are shown in Fig. 28(K). ), and the results for black point b5 are shown in Figure 28(L).

[0542] From Fig. 28(H), Fig. 28(I), Fig. 28(J), Fig. 28(K), and Fig. 28(L), A ring-shaped area of ​​high brightness can be observed. Also, multiple spots can be observed in the ring-shaped area. can.

[0543] For example, for a CAAC-OS having an InGaZnO4 crystal, When an electron beam with a probe diameter of 300 nm is incident on the row, the (00 9) The diffraction pattern includes spots due to the CAAC-OS It is known that the film has a c-axis orientation, and the c-axis is oriented in a direction substantially perpendicular to the surface on which the film is formed or the upper surface. On the other hand, an electron beam with a probe diameter of 300 nm is incident perpendicularly to the surface of the same sample. In other words, CAAC-OS has a ring-shaped diffraction pattern along the a-axis and b-axis. It can be seen that the film has no orientation.

[0544] In addition, a nanocrystalline oxide semiconductor nc-OS) with a large probe diameter When electron diffraction is performed using an electron beam (e.g., 50 nm or larger), a halo pattern is observed. A diffraction pattern is observed. In addition, a small probe diameter electron beam (e.g. When nanobeam electron diffraction is performed using a material with a diameter of less than 50 nm, bright spots are observed. In addition, when nanobeam electron diffraction was performed on the nc-OS, a circular (ring-shaped) In some cases, a bright area is observed. In addition, multiple bright spots are observed in a ring-shaped area. It may be measured.

[0545] Electron beam diffraction patterns of the sample prepared at the substrate temperature RT and oxygen gas flow rate of 10% during film formation. The turn has a ring-shaped area of ​​high brightness and multiple bright points in the ring area. The sample was fabricated at a substrate temperature of RT and an oxygen gas flow rate of 10%. The turns become nc-OS, and have no orientation in the planar and cross-sectional directions.

[0546] From the above, an oxide semiconductor having a low substrate temperature or a low oxygen gas flow rate during film formation has the following properties: It is clearly different from an oxide semiconductor film having an amorphous structure and an oxide semiconductor film having a single crystal structure. It can be presumed that the substance has the following properties:

[0547] ≪Elemental analysis≫ In this article, we will discuss energy dispersive X-ray spectroscopy (EDX). EDX mapping was obtained and evaluated using vective X-ray spectroscopy. By evaluating the film formation temperature, the film was formed at a substrate temperature of RT and an oxygen gas flow rate of 10%. The results of elemental analysis of the sample are described below. Note that the EDX measurement was performed using an elemental analyzer and The energy dispersive X-ray analyzer JED-2300T manufactured by JEOL Ltd. is used. A Si drift detector is used to detect the X-rays emitted from the sample.

[0548] In EDX measurement, each point in the analysis area of ​​the sample is irradiated with an electron beam, which generates The energy and frequency of the characteristic X-rays of the sample are measured, and the EDX spectrum corresponding to each point is obtained. In this embodiment, the peaks in the EDX spectrum at each point are determined as electron transitions to the L shell of the In atom. electron transition to the K shell of Ga atom, electron transition to the K shell of Zn atom, and electron transition to the K shell of O atom The ratio of each atom at each point is calculated. By performing EDX analysis on the target area, an EDX map showing the distribution of the ratio of each atom is obtained. It is possible.

[0549] FIG. 29 shows the results of the samples fabricated at a substrate temperature of RT and an oxygen gas flow rate of 10% during film formation. FIG. 29(A) shows the EDX mapping of Ga atoms ( The ratio of Ga atoms to the total atoms is in the range of 1.18 to 18.64 [atomic%]. FIG. 29(B) shows the EDX mapping of In atoms (the ratio of In atoms to the total atoms). The ratio is in the range of 9.28 to 33.74 [atomic%]. C) EDX mapping of Zn atoms (ratio of Zn atoms to total atoms is 6.69 to 2. 4.99 [atomic%] range.) Also, Fig. 29(A) and Fig. 29(B) ), and FIG. 29(C) are fabricated at a substrate temperature of RT and an oxygen gas flow rate of 10% during film formation. The EDX mapping shows the same area in the cross section of the sample. The more the measured element, the brighter the light, and the less the measured element, the darker the light. The EDX mapping shown in Figure 29 was performed at a magnification of 7.2 million times. be.

[0550] In the EDX mapping shown in FIG. 29(A), FIG. 29(B), and FIG. 29(C), The relative distribution of light and dark can be seen. The substrate temperature during film formation is RT, and the oxygen gas flow rate is 10%. In the prepared sample, it can be seen that each atom exists with its own distribution. The areas surrounded by solid lines and the areas surrounded by dashed lines shown in Figures 29(A), 29(B), and 29(C) Pay attention to.

[0551] In FIG. 29(A), the area enclosed by the solid line contains many relatively dark areas, and the area enclosed by the dashed line contains many relatively dark areas. In FIG. 29(B), the area enclosed by the solid line contains many relatively bright areas. The area surrounded by the dashed line contains many relatively bright areas, while the area surrounded by the dashed line contains many relatively dark areas.

[0552] In other words, the area surrounded by the solid line is the area with a relatively large amount of In atoms, and the area surrounded by the dashed line is the area with a relatively large amount of In atoms. This is a region with relatively few atoms. In FIG. 29(C), the area surrounded by the solid line The right side is a relatively bright area, and the left side is a relatively dark area. The range is In X2 Zinc Y2 O Z2 , or InO X1 This is an area where the main components are:

[0553] The area surrounded by the solid line is the area with relatively few Ga atoms, and the area surrounded by the dashed line is the area with relatively few Ga atoms. In Figure 29(C), the upper left area in the area enclosed by the dashed line is The upper right area is a relatively bright area, and the lower right area is a relatively dark area. The area enclosed by the dashed line is GaO X3 , or Ga X4 Zinc Y4 O Z4 In areas where the main components are be.

[0554] In addition, from FIG. 29(A), FIG. 29(B), and FIG. 29(C), the distribution of In atoms is Ga The atoms are relatively uniformly distributed, and the InO X1 The region where is the main component is In X2 Zinc Y2 OZ2 It appears that the layers are connected to each other through the regions where In this way, X2 Zinc Y2 O Z2 , or InO X1 The region where is the main component is the cloud. It is formed in a burdock-like shape.

[0555] In this way, GaO X3 The main components are In X2 Zinc Y2 O Z2 , or I nO X1 The In-Ga-Zn structure has a structure in which the In-Ga-Zn The oxide can be referred to as CAC-OS.

[0556] The crystal structure of CAC-OS is an nc structure. The c-structure is characterized in electron diffraction patterns as being in single crystal, polycrystalline, or CAAC structure-containing IGZO. In addition to the bright spot caused by the smear, there are several bright spots. In addition to two or more bright spots, a ring-shaped area of ​​high brightness appears, indicating a crystal structure. is defined.

[0557] In addition, from Figs. 29(A), 29(B), and 29(C), GaO X3 The main components are and In X2 Zinc Y2 O Z2 , or InO X1 The size of the region in which is the principal component The observed size is 0.5 nm or more and 10 nm or less, or 1 nm or more and 3 nm or less. In EDX mapping, the diameter of the area where each element is the main component is 1 nm or more and 2 nm or less. m or less.

[0558] From the above, it can be seen that CAC-OS has a structure different from that of IGZO compounds in which metal elements are uniformly distributed. and has properties different from those of IGZO compounds. X3 N The regions where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 The area where is the main component The phases are separated into two, and the regions each containing one of the elements as a main component are arranged in a mosaic pattern.

[0559] Here, In X2 Zinc Y2 O Z2 , or InO X1 The area where GaO is the main component X3 This region has a higher electrical conductivity than the region where In is the main component. X2 Zinc Y 2O Z2 , or InO X1 The carriers flow through the area where the oxide is the main component. The conductivity of a semiconductor is expressed. X2 Zinc Y2 O Z2 , or InO X1 but The main component is distributed in a cloud-like shape in the oxide semiconductor, which results in high field-effect mobility. degree (μ) can be achieved.

[0560] On the other hand, GaO X3 The region where the main components are In X2 Zinc Y2 O Z2 , or InO X This region has higher insulating properties than the region where GaO X3 etc. The distribution of the main component in the oxide semiconductor suppresses leakage current and provides good switching performance. Switching operation can be achieved.

[0561] Therefore, when CAC-OS is used in a semiconductor device, GaO X3 Insulation and , In X2 Zinc Y2 O Z2 , or InO X1 The conductivity caused by the This results in a high on-state current (I on ) and high field-effect mobility (μ) can be achieved. Cut.

[0562] In addition, semiconductor devices using CAC-OS have high reliability. It is ideal for various semiconductor devices including displays.

[0563] In addition, a transistor having a CAC-OS semiconductor layer has high field-effect mobility and Since the transistor has high dynamic capability, it is possible to connect the transistor to a driving circuit, typically a gate driver that generates a gate signal. To provide a display device having a narrow frame width (also called a narrow frame) by using the same in a line driving circuit. In addition, the transistor can be connected to a signal line that supplies a signal to the display device. A signal line driver circuit (especially a device connected to the output terminal of a shift register of the signal line driver circuit) By using it in a multiplexer, a display device with fewer wires can be provided. It is possible.

[0564] In addition, the transistor with CAC-OS in the semiconductor layer is a transistor using low-temperature polysilicon. Unlike transistors, the laser crystallization process is not required. Therefore, it is suitable for display using a large area substrate. It is possible to reduce the manufacturing cost of the ultra-high vision device. ("4K resolution", "4K2K", "4K"), Super Hi-Vision ("8K resolution" ", "8K4K", "8K" and other high-resolution and large-sized display devices By using transistors with CAC-OS in the conductor layer in the drive circuits and display section, This is preferable because it is possible to write between the pixels and reduce display defects.

[0565] Alternatively, silicon may be used as the semiconductor in which the channel of the transistor is formed. Although amorphous silicon may be used as the silicon, it is particularly preferable to use silicon having crystallinity. For example, it is preferable to use microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. In particular, polycrystalline silicon can be formed at a lower temperature than single crystal silicon, It also has higher field effect mobility and higher reliability than amorphous silicon.

[0566] The bottom-gate transistor described in this embodiment can reduce the manufacturing process. In addition, the use of amorphous silicon in this case is preferable compared to polycrystalline silicon. Since it can be formed at low temperatures, it is highly resistant and can be used as a material for wiring and electrodes below the semiconductor layer, and as a material for substrates. The possibility of using low-heat materials allows for a wider range of material choices. For example, a very large glass substrate can be used. Since the impurity region of the transistor is easily formed in a self-aligned manner, the characteristics of the transistor are not uniform. In this case, it is preferable to reduce the amount of the polycrystalline silicon or single crystal silicon. It is suitable for use in the following cases:

[0567] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Explanation of symbols]

[0568] ACF1 Conductive Material ADD Wiring AF1 alignment film AF2 alignment film ANO wiring BM light shielding film C11 Capacitor element C12 Capacitor element CF1 colored film COM wiring COM-Rx wiring COM-Tx wiring CSCOM Wiring CTRL Wiring G1 scan line G2 scan line GVSS Cabling KB1 structure L1 visible light L2 light ND1 wiring ND2 wiring ND3 wiring R1 Arrow S1 signal line S2 signal line SD1 driver circuit SD2 driver circuit SW1 Switch SW2 switch V11 Information V12 Information VCOM1 wiring VCOM2 conductive layer 10 Display device 11 Substrate 12 Substrate 13 FPC 14 Conductive layer 20 Liquid crystal element 21 Conductive layer 21a Conductive layer 21b Conductive layer 22 Conductive layer 22a conductive layer 22b Conductive layer 22c conductive layer 23 Liquid crystal 24 Insulating layer 31 Colored film 61 Gate Driver 61a Decoder 61b Selection circuit 61c Shift Register 61d Switch 61e Switch 61f Switch 61g Buffer 61h Switch 62 Receiver Circuit 63 Touch Sensor 64 pixels 64a Select transistor 64b Capacitive element 64c Liquid crystal display element 64d Contact 64e Contact 64f Common electrode 64g Contact 64h Wiring 65 scan lines 66 Signal Line 67 Capacitive element 68 Pixel electrode 200 LCD display device 201 Display section 202 Gate line driving circuit 203 pixels 231 Display area 305a Connection 307a Liquid crystal element 307b Liquid crystal element 311 Substrate 312 Insulating layer 313 Insulating Layer 315 Insulating Layer 317 Insulating Layer 319 Insulating Layer 331 Conductive Layer 333 Conductive Layer 335 Conductive Layer 341 Colored film 343 Light-shielding film 345 Insulation Layer 347 Spacer 349 Liquid Crystal 351 Conductive Layer 352 Conductive layer 352a Wiring 353 Insulating Layer 361 Substrate 365 Adhesive layer 367 Connectors 368 IC 369 FPC 370a Transistor 372 Polysilicon Film 373 Conductive Layer 374a conductive layer 374b Conductive layer 380a transistor 501B Insulating film 501C Insulating film 504 Conductive layer 505 Bonding layer 506 Insulating film 508 Semiconductor Film 511B Conductive layer 512A conductive layer 512B Conductive layer 516 Insulating film 518 Insulating film 518A Insulating film 518A1 Insulating film 518A2 Insulating film 518B Insulating film 519B Terminal 520 Functional Layer 521 Insulating film 521A Insulating film 521B Insulating film 521C Insulating film 522 Connection 524 Conductive Layer 528 Insulating film 530 Pixel Circuit 550 Display element 551 Electrode 552 Electrode 553 Layer containing luminescent material 560 Optical Elements 560A area 560B area 560C area 565 Coating film 570 Substrate 580 Lens 591A opening 592B opening 700 Display device 700B display unit 702 pixels 703 pixels 705 Encapsulating material 720 Functional Layer 750 Display element 751 First Electrode 751A conductive layer 751B Reflective film 751C conductive layer 751H area 752 Second Electrode 753 Layer containing liquid crystal material 770 Substrate 770D Functional membrane 770P functional membrane 770PA Functional membrane 770PB functional membrane 771 Insulating Film 771A Insulating film 771B Insulating film 5200B Information Processing Equipment 5210 Arithmetic unit 5220 I / O device 5230 Display section 5240 Input Unit 5250 Detector 5290 Communications Department

Claims

[Claim 1] A semiconductor laser comprising a first switch, a second switch, and a pixel, the pixel includes a first transistor, a second transistor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a first liquid crystal element, and a second liquid crystal element; the first switch is electrically connected to a first signal line; a first terminal of the first switch electrically connected to a common line; a second terminal of the first switch electrically connected to a first wiring; a third terminal of the first switch electrically connected to a first touch wiring; the second switch is electrically connected to the first signal line; a first terminal of the second switch electrically connected to the common line; a second terminal of the second switch electrically connected to a second wiring; a third terminal of the second switch is electrically connected to a third touch wiring; one of a source and a drain of the first transistor is electrically connected to a second signal line; the other of the source and the drain of the first transistor is electrically connected to a first electrode of the first capacitance element; the other of the source and the drain of the first transistor is electrically connected to a first electrode of the first liquid crystal element; a gate of the first transistor is electrically connected to a scan line; the first wiring is electrically connected to a second electrode of the first capacitance element; the first wiring is electrically connected to a second electrode of the first liquid crystal element; the first wiring is electrically connected to a first electrode of the second capacitance element; a second electrode of the second capacitance element is electrically connected to a second touch wiring; one of a source and a drain of the second transistor is electrically connected to a third signal line; the other of the source and the drain of the second transistor is electrically connected to a first electrode of the third capacitance element; the other of the source and the drain of the second transistor is electrically connected to a first electrode of the second liquid crystal element; a gate of the second transistor electrically connected to the scan line; the second wiring is electrically connected to a second electrode of the third capacitance element; the second wiring is electrically connected to a second electrode of the second liquid crystal element; the second wiring is electrically connected to a first electrode of the fourth capacitance element; a second electrode of the fourth capacitance element is electrically connected to the second touch wiring; When the potential of the first signal line is L, a first terminal of the first switch and a second terminal of the first switch are in a conductive state, When the potential of the first signal line is H, the second terminal of the first switch and the third terminal of the first switch are in a conductive state, When the potential of the first signal line is L, the first terminal of the second switch and the second terminal of the second switch are in a conductive state, When the potential of the first signal line is H, the second terminal of the second switch and the third terminal of the second switch are brought into a conductive state.

Images