ABNORMALITY DETECTION METHOD AND PROCESSING DEVICE

Abstract

To detect an abnormality in supply of gas into a processing container of a processor.SOLUTION: A method for detecting an abnormality includes the steps of: supplying a gas controlled at a specific flow rate into a gas supply pipe connected to a gas pipe through the gas pipe and introducing the gas from a gas hole of the gas supply pipe into a reaction region in a processing container of a processor; measuring the pressure of the inside of the gas pipe by a pressure meter attached to the gas pipe; and detecting an abnormality in one of the gas supply pipe and in the gas pipe on the basis of the measured pressure.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to an anomaly detection method and processing device. [Background technology]

[0002] For example, Patent Document 1 discloses a method for inspecting a gas supply line in a semiconductor manufacturing device and a method for calibrating a flow rate controller. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-44887 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, even if the flow rate controller and the gas supply line are operating normally, there may be an abnormality in the supply of gas into the processing vessel in which the substrate is processed, which may result in product defects and a decrease in the operating rate and productivity during mass production.

[0005] The present disclosure provides a technique capable of detecting an abnormality in the supply of gas into a processing vessel of a processing apparatus. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, 1. An abnormality detection method for performing an abnormality detection process mode separately from a substrate processing or cleaning process mode, comprising: (A) a step of exhausting gas from a processing vessel of a processing apparatus; and (B) after the step (A), A gas controlled to a predetermined flow rate is supplied through a gas pipe to a gas supply pipe connected to the gas pipe, and gas is discharged from a gas hole of the gas supply pipe. The above introducing the reaction gas into a reaction zone within a processing vessel; (C) While carrying out the step (B), measuring the pressure in the gas piping with a pressure gauge attached to the gas piping; (D)and detecting an abnormality in at least one of the gas supply pipe and the gas piping based on the measured pressure dropping below a predetermined pressure. Effect of the Invention

[0007] According to one aspect, an abnormality in the supply of gas into a processing vessel of a processing apparatus can be detected. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a schematic diagram illustrating an example of a processing device according to an embodiment. [Diagram 2] 11 is a flowchart illustrating an example of an anomaly detection method according to an embodiment. [Diagram 3] FIG. 3 is a graph for explaining the anomaly detection method of FIG. 2. [Figure 4] 13 is a flowchart showing a first modification of the abnormality detection method according to the embodiment; [Diagram 5] FIG. 5 is a graph illustrating an abnormality detection method according to the first modified example of FIG. [Figure 6] 13 is a flowchart showing a second modification of the abnormality detection method according to the embodiment; [Figure 7] 13 is a flowchart showing a third modification of the abnormality detection method according to the embodiment; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0010] [Processing Device] An example of a processing apparatus according to an embodiment of the present disclosure will be described with reference to Fig. 1. Fig. 1 is a schematic diagram showing an example of a processing apparatus 1 according to an embodiment. The processing apparatus 1 includes a processing vessel 10, a gas supply unit 2, an exhaust unit 30, a heating unit 40, a cooling unit 50, a temperature sensor 60, a pressure gauge 66, and a control unit 90.

[0011] The processing vessel 10 has a substantially cylindrical shape and includes an inner tube 11, an outer tube 12, a manifold 13, injectors 28 and 29, a gas outlet 15, and a lid 16. The injectors 28 and 29 are an example of gas supply pipes.

[0012] The inner pipe 11 has a substantially cylindrical shape and is made of a heat-resistant material such as quartz. The inner pipe 11 is also called an inner tube.

[0013] The outer tube 12 has a generally cylindrical shape with a ceiling, and is disposed concentrically around the inner tube 11. That is, the inner tube 11 and the outer tube 12 form a double-tube structure. The outer tube 12 is made of a heat-resistant material such as quartz. The outer tube 12 is also called an outer tube.

[0014] The manifold 13 has a substantially cylindrical shape and supports the lower ends of the inner tube 11 and the outer tube 12. The manifold 13 is made of, for example, stainless steel.

[0015] The injectors 28, 29 extend horizontally through the manifold 13 into the inner tube 11, and then bend into an L-shape inside the inner tube 11 and extend upward. The injectors 28, 29 have their base ends connected to the gas pipe 20. The injector 28 has a plurality of gas holes 28a opening toward the center of the inner tube 11. The injector 29 has a plurality of gas holes 29a opening toward the center of the inner tube 11. The plurality of gas holes 28a, 29a are provided at equal intervals in the height direction. The gas supplied from the injectors 28, 29 includes, for example, a film-forming gas, a process gas such as a cleaning gas, and an inert gas. In the present disclosure, the film-forming gas includes, for example, a silicon-containing gas, a nitriding gas, an oxidizing gas, and a doping gas when a silicon-containing film is formed. The silicon-containing film includes, for example, a silicon film, a silicon nitride film, and a silicon oxide film. The cleaning gas includes, for example, F 2 Gas, Cl 2 Gas, ClF 3 Gas, NF 3The inert gas is a gas for replacing the atmosphere in the processing chamber 10 with an inert gas atmosphere, and is, for example, N 2 Gas, Ar gas, etc.

[0016] The gas supply unit 2 includes a processing gas source 21, an inert gas source 22, a gas supply line 14, a flow rate controller 25, and a gas pipe 20. The processing gas source 21 is a supply source of processing gas and includes, for example, a film formation gas source and a cleaning gas source. The inert gas source 22 is a supply source of inert gas and includes an inert gas source 22. The gas supply line 14 and the gas pipe 20 connect the processing gas source 21 and the inert gas source 22 to injectors 28 and 29.

[0017] An on-off valve 23 is provided in the gas line 14 between the processing gas source 21 and the flow rate controller 25. An on-off valve 24 is provided in the gas line 14 between the inert gas source 22 and the flow rate controller 25. The on-off valve 23 controls the supply and stop of the processing gas by opening and closing a valve body. The on-off valve 24 controls the supply and stop of the inert gas by opening and closing a valve body. The flow rate controller 25 is connected to the gas supply line 14 and the gas piping 20, and controls the gases supplied from the various gas sources to a predetermined flow rate and flows them into the gas piping 20. The flow rate controller 25 is, for example, a mass flow controller.

[0018] An on-off valve 27 is provided on the gas pipe 20 on the injectors 28, 29 side, and an on-off valve 26 is provided on the flow rate controller 25 side. By opening and closing the valves 26, 27, supply / stop of various gases and switching of gases are controlled.

[0019] A pressure gauge 66 is attached to the gas pipe 20. In FIG. 1, the pressure gauge 66 is attached between the gas pipe 20 where the on-off valves 26, 27 are arranged. However, the present invention is not limited to this, and the pressure gauge 66 may be attached to any position of the gas pipe 20 between the injectors 28, 29 and the flow rate controller 25. The pressure gauge 66 measures the pressure inside the gas pipe 20. The pressure gauge 66 transmits the detected pressure to the control unit 90.

[0020] The process gas is output from a process gas source 21 and controlled to a predetermined flow rate by a flow rate controller 25. The process gas is supplied to injectors 28 and 29 via gas piping 20 and discharged horizontally from gas holes 28a and 29a of the injectors 28 and 29 into inner tube 11, which is a reaction region in process vessel 10.

[0021] The inert gas is output from an inert gas source 22 and controlled to a predetermined flow rate by a flow rate controller 25. The inert gas is supplied to the injectors 28, 29 via the gas pipe 20 and is discharged horizontally from gas holes 28a, 29a of the injectors 28, 29 into the inner tube 11, which is a reaction region in the processing vessel 10. The injector 28 is provided in the height direction of the processing vessel 10 up to approximately the height of the upper end of the inner tube 11, and discharges gas from the gas holes 28a evenly arranged in the height direction. The injector 29 has a height about half that of the injector 28, and discharges gas from the gas holes 29a evenly arranged in the height direction.

[0022] However, the length (height) of the injector is not limited to this. Among the multiple injectors, injector 28 has the longest shape, and is also referred to as "TOP INJ." Injector 29 has a shape of medium length that is shorter than injector 28, and is also referred to as "CTR INJ."

[0023] 1, there are two injectors 28, 29, but the number of injectors may be one or three or more. For example, an injector having a shape with the shortest length shorter than injector 29 may be provided together with injectors 28, 29.

[0024] The gas outlet 15 is formed in the manifold 13. An exhaust pipe 32 is connected to the gas outlet 15. The processing gas supplied into the processing chamber 10 is exhausted by an exhaust unit 30 via the gas outlet 15.

[0025] The exhaust section 30 includes an exhaust device 31, an exhaust pipe 32, and a pressure controller 33. The exhaust device 31 is, for example, a vacuum pump such as a dry pump or a turbo molecular pump. The exhaust pipe 32 connects the gas outlet 15 and the exhaust device 31. The pressure controller 33 is disposed in the exhaust pipe 32, and controls the pressure inside the processing vessel 10 by adjusting the conductance of the exhaust pipe 32. The pressure controller 33 is, for example, an automatic pressure control valve.

[0026] The lid 16 airtightly closes the opening at the lower end of the manifold 13. The lid 16 is made of, for example, stainless steel. A wafer boat 18 is placed on the lid 16 via a thermal insulation tube 17. The thermal insulation tube 17 and the wafer boat 18 are made of, for example, a heat-resistant material such as quartz. The wafer boat 18 holds a plurality of wafers W substantially horizontally at a predetermined interval in the vertical direction. The wafer boat 18 is loaded into the processing vessel 10 by the lifting mechanism 19 lifting the lid 16, and is accommodated in the processing vessel 10. The wafer boat 18 is unloaded from the processing vessel 10 by the lifting mechanism 19 lowering the lid 16.

[0027] The heating part 40 includes a heat insulating material 41, a heating element 42, and an outer skin 43. The heat insulating material 41 has a substantially cylindrical shape and is provided around the outer tube 12. The heat insulating material 41 is formed mainly of silica and alumina. The heating element 42 has a linear shape and is provided in a spiral or serpentine shape on the inner circumference of the heat insulating material 41. The outer skin 43 is provided so as to cover the outer circumference of the heat insulating material 41. The outer skin 43 maintains the shape of the heat insulating material 41 and reinforces the heat insulating material 41. The outer skin 43 is formed of a metal such as stainless steel. In addition, a water-cooled jacket (not shown) may be provided on the outer circumference of the outer skin 43 to suppress the thermal influence of the heating part 40 on the outside. The heating part 40 heats the inside of the processing vessel 10 by the heat generated by the heating element 42.

[0028] The cooling unit 50 supplies a cooling fluid toward the processing vessel 10 to cool the wafer W in the processing vessel 10. The cooling fluid may be, for example, air. The cooling unit 50 supplies the cooling fluid toward the processing vessel 10 when, for example, the wafer W is rapidly cooled after heat treatment. The cooling unit 50 also supplies the cooling fluid toward the inside of the processing vessel 10 when, for example, cleaning is performed to remove a deposited film in the processing vessel 10. The cooling unit 50 has a fluid flow path 51, an outlet hole 52, a distribution flow path 53, a flow rate adjustment unit 54, and a heat exhaust port 55.

[0029] A plurality of fluid flow paths 51 are formed in the height direction between the heat insulating material 41 and the outer skin 43. The fluid flow paths 51 are flow paths formed on the outer side of the heat insulating material 41 along the circumferential direction, for example.

[0030] The blowing holes 52 are formed from each fluid flow path 51 penetrating the insulating material 41 , and blow out the cooling fluid into the space between the outer pipe 12 and the insulating material 41 .

[0031] The distribution flow passage 53 is provided outside the outer shell 43 and distributes and supplies the cooling fluid to each fluid flow passage 51.

[0032] The flow rate adjusting unit 54 is disposed in the distribution flow path 53 and adjusts the flow rate of the cooling fluid supplied to the fluid flow path 51 .

[0033] The heat exhaust port 55 is provided above the multiple blowing holes 52, and exhausts the cooling fluid supplied to the space between the outer pipe 12 and the heat insulating material 41 to the outside of the processing device 1. The cooling fluid exhausted to the outside of the processing device 1 is cooled, for example, by a heat exchanger, and supplied again to the distribution flow path 53. However, the cooling fluid exhausted to the outside of the processing device 1 may be exhausted without being reused.

[0034] The temperature sensor 60 detects the temperature inside the processing vessel 10. A plurality of temperature sensors 60 are provided, for example, inside the inner tube 11 at equal intervals in the height direction and detect temperatures at a plurality of heights inside the inner tube 11.

[0035] The control unit 90 controls the operation of the processing device 1. The control unit 90 may be, for example, a computer. A computer program that performs the overall operation of the processing device 1 is stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like. The control unit 90 acquires the pressure measured by the pressure gauge 66, and detects an abnormality in at least one of the injectors 28, 29 and the gas piping 20 based on the acquired pressure.

[0036] [Anomaly detection method] Next, an example of an anomaly detection method according to an embodiment of the present disclosure will be described with reference to a flowchart showing an example of an anomaly detection method according to an embodiment of the present disclosure in FIG. 2. In FIG. 2, a film forming process and a cleaning process are sequentially performed as an example of a process performed by the processing device 1, and the anomaly detection process (anomaly detection method) according to the present disclosure is performed after the cleaning process. This process is controlled by a control unit 90. Before this process is started, the wafer boat 18 is loaded into the processing container 10 by the lifting mechanism 19 lifting the lid 16, and is accommodated in the processing container 10.

[0037] When the process is started, in step S1, the control unit 90 executes a film formation process. At this time, the opening and closing valves 23, 26, and 27 are opened, and the opening and closing valve 24 is closed. A film formation gas supplied from a film formation gas source of the process gas source 21 is supplied to the injectors 28 and 29 via the gas piping 20, and introduced into the inner tube 11 from the gas holes 28a and 29a. In this way, a film formation process is performed on a plurality of substrates W. During the film formation process, the film formation gas is controlled to a desired flow rate by the flow rate controller 25.

[0038] After the film forming process, the wafer boat 18 is unloaded from the processing vessel 10 by lowering the lid 16 by the lifting mechanism 19. Then, in step S2, the control unit 90 executes a cleaning process. At this time, a cleaning gas supplied from the cleaning gas source of the processing gas source 21 is supplied to the injectors 28 and 29 via the gas piping 20 and introduced into the inner tube 11 from the gas holes 28a and 29a. This performs a cleaning process inside the processing vessel 10. During the cleaning process, the cleaning gas is controlled to a desired flow rate by the flow rate controller 25. The cleaning process may be performed after the wafer boat 18 is loaded into the processing vessel 10 and accommodated in the processing vessel 10.

[0039] After the cleaning process, in steps S3 to S7, the control unit 90 executes an abnormality detection process. In the abnormality detection process, pressure measurement is performed by the pressure gauge 66. Note that, by using an MFC (for example, the flow rate controller 25) equipped with a pressure gauge, the pressure measurement may be performed using a pressure detection unit (pressure gauge) in the MFC. In other words, the pressure gauge attached to the gas pipe 20 includes the pressure gauge 66 and a pressure gauge mounted on the MFC. Although there is no limit to the type of gas supplied during the abnormality detection process, the gas flow rate, and the gas supply time, it is important to monitor the pressure by controlling the gas type and gas flow rate to the same conditions before and after the abnormality detection process that is repeated multiple times in order to grasp the amount of change in pressure measured by the pressure gauge 66. Therefore, in order to execute an accurate pressure measurement, the processes of steps S3 to S5 are executed before the pressure measurement in step S6, and the gas type and gas flow rate are controlled to the same conditions. Note that, in the present disclosure, the control unit 90 performs the N 2 Although the abnormality detection process is executed by supplying gas, the gas supplied in the abnormality detection process is not limited to this, and may be Ar gas or He gas.

[0040] As a process for monitoring the pressure under the same conditions, in step S3, the control unit 90 removes the remaining gas in the gas flow path of the gas supply unit 2 to create a stable initial state. Specifically, the gas is removed from the gas flow path that connects the injectors 28, 29 to the gas sources (processing gas source 21 and inert gas source 22) that are gas supply sources via the gas piping 20 and the gas line 14. The gas is removed from the gas flow path that connects the injectors 28, 29 to the gas sources by opening the on-off valves 26, 27 and evacuating the inside of the processing vessel 10 and the inside of the gas flow path of the gas supply unit 2 with the exhaust device 31.

[0041] Next, in step S4, the control unit 90 opens the on-off valve 24, and controls the flow rate controller 25 to control the flow rate of N 2 The gas flow rate is controlled to a predetermined value, and N is supplied to the injectors 28 and 29. 2 Next, in step S5, the control unit 90 supplies N gas at a predetermined flow rate for a preset time. 2This allows a constant flow of N to the injectors 28, 29 before pressure is measured by the pressure gauge 66. 2 The gas is supplied to stabilize the gas supply. During the abnormality detection process of the present disclosure, the state inside the processing vessel 10 is preferably a low degree of vacuum, i.e., a high vacuum. 2 The gas flow rate is preferably large so that changes in the conductance of the injectors 28, 29 and the gas holes 28a, 29a can be easily detected.

[0042] Next, in step S6, the pressure gauge 66 measures the pressure and transmits the measured pressure to the control unit 90, which acquires the measured pressure from the pressure gauge 66. Next, in step S7, the control unit 90 calculates the rate of change (hereinafter referred to as the "pressure change rate") of the pressure measured this time (assumed to be P2) relative to the pressure (assumed to be P1) measured by the pressure gauge 66 by controlling the gas type and gas flow rate under the same conditions when the injectors 28, 29 were new. The pressure P1 measured when the injectors 28, 29 were new is stored in a memory unit included in the control unit 90. The control unit 90 calculates the pressure change rate (%) based on the pressure P2 measured this time using the formula (P2 / P1)×100.

[0043] The control unit 90 determines whether the calculated pressure change rate is equal to or greater than a preset threshold value x1%. If the control unit 90 determines that the calculated pressure change rate is equal to or greater than the threshold value x1, it determines that the pressure change is not large compared to when the injector was new, that is, no abnormality is detected. In this case, the control unit 90 returns to step S1 and repeats the processes of steps S1 to S7 (such as the film formation process for the next lot).

[0044] On the other hand, if the control unit 90 determines in step S7 that the calculated pressure change rate is less than the threshold value x1%, it determines that the pressure change is large compared to when the injector was new, that is, that an abnormality has been detected. In this case, in step S8, the control unit 90 stops the operation of the processing device 1 and replaces the injector, and ends this process.

[0045] The graph in Figure 3 shows the results of a simulation showing the relationship between the amount of etching of the injector and normalized pressure. The amount of etching of the injector is the amount by which the injector is eroded. When the injector is eroded by the cleaning gas or the like, the conductance changes, and the pressure measured by the pressure gauge 66 changes.

[0046] In this simulation, N 2 The gas flow rate was controlled to 500 sccm. The horizontal axis of the graph indicates the etching amount (mm) of the injectors 28 and 29, and the vertical axis indicates the normalized pressure change rate (%). When the horizontal axis is 0 mm, that is, when the etching amount is 0, the injectors 28 and 29 are brand new. Therefore, the vertical axis indicates the change rate of pressure measured by the pressure gauge 66 relative to the etching amount of the injectors 28 and 29, in percentage, when the pressure change rate when the injectors 28 and 29 are brand new is set to 100%. The black circles in the graph indicate the pressure change rate relative to the etching amount when the injector 28 (labeled "TOP INJ") is used, and the white circles indicate the pressure change rate relative to the etching amount when the injector 29 (labeled "CTR INJ") is used.

[0047] 3 shows that as the etching of the injectors 28, 29 progresses, the conductance of the injectors 28, 29 increases, which causes a decrease in the pressure measured by the pressure gauge 66. Here, the amount of etching of the injectors 28, 29 has been described, but similarly, as the etching of the gas pipe 20 progresses, the conductance of the gas pipe 20 increases, which causes a decrease in the pressure measured by the pressure gauge 66. Therefore, by monitoring the change in the pressure measured by the pressure gauge 66, it is possible to detect an abnormality in at least one of the injectors 28, 29 and the gas pipe 20 connected to the injectors 28, 29.

[0048] When the etching amount of the injectors 28, 29 increases, the conductance of the gas flowing through the injectors 28, 29 increases, and the pressure measured by the pressure gauge 66 decreases. For example, as shown by the arrow "A" in FIG. 3, when the pressure change rate is less than 65%, it can be determined that the etching amount of the injectors 28, 29 is large and there is a risk of damage, such as the injectors 28, 29 breaking. Therefore, the threshold value x 1% is set in advance to 65% and stored in the storage unit. Then, when it is determined in the abnormality detection process that the pressure change rate is less than the threshold value x 1%, the operation of the processing device 1 is stopped, or the injector is replaced before it is damaged. However, the set value of the threshold value x 1% is not limited to this.

[0049] When the processing apparatus 1 is operated for a long period of time, the injectors 28, 29 and / or the gas pipe 20 are etched or a film is formed by cleaning gas, etching gas, film forming gas, etc. Furthermore, these gases may enlarge or clog the gas holes 28a, 29a, which may cause product defects and a decrease in the mass production operating rate.

[0050] Therefore, in the processing apparatus 1 according to the present disclosure, N is supplied to the gas pipe 20, the injectors 28 and 29, and the gas holes 28a and 29a. 2 An arbitrary gas such as a gaseous fuel is supplied, and when the supply of the gas becomes stable, the pressure in the gas pipe 20 is measured by the pressure gauge 66. The measured pressure is transmitted to the control unit 90, which acquires the measured pressure and calculates the rate of change (pressure change rate) from the pressure when the injectors 28, 29 were new.

[0051] The pressure change rate allows the control unit 90 to grasp changes in conductance within the injectors 28, 29 and the gas piping 20. Therefore, from the calculated pressure change rate, the control unit 90 can detect that an abnormality has occurred in at least one of the injectors 28, 29 and the gas piping 20. Note that detection of these abnormalities includes abnormalities in the gas holes 28a, 29a of the injectors 28, 29.

[0052] 3, the cleaning process etches the injectors 28, 29, etc., thereby increasing the conductance in the injectors 28, 29, etc., and the measured pressure is lower than the initial pressure, but the present invention is not limited to this. For example, the film formation process may form a film on the injectors 28, 29, etc., thereby decreasing the conductance in the injectors 28, 29, etc., and the measured pressure may be higher than the initial pressure.

[0053] In other words, types of abnormalities that can be detected by the abnormality detection method of the present disclosure include a decrease in the wall thickness of the injectors 28, 29 due to excessive cleaning, and an increase in the wall thickness of the injectors 28, 29 due to excessive film formation.

[0054] The types of abnormality include damage to the injectors 28, 29 due to excessive cleaning, enlargement of the gas holes 28a, 29a due to excessive cleaning, and clogging (shrinkage) of the gas holes 28a, 29a due to film formation. The types of abnormality include improper installation (presence or absence of leakage) of the injectors 28, 29 when installing or replacing the injectors 28, 29, and a problem in the connection between the injectors 28, 29 and the gas pipe 20. The improper installation of the injectors 28, 29 occurs when the connection between the injector and the connection part of the gas pipe 20 is insufficient, causing a gas leak. The connection problem occurs when the injector 28 is connected to one of the multiple connections of the gas pipe 20 and the injector 29 is connected to the other, making an error in the connection destination. The types of abnormality may include a change in the conductance of the injector, damage to the gas pipe 20, a connection problem, etc.

[0055] [Variation 1] Next, the abnormality detection method according to the first modification will be described with reference to the flowchart of Fig. 4 showing the abnormality detection method according to the first modification. This process is controlled by the control unit 90. Note that when the step numbers in the flowchart of Fig. 4 overlap with the step numbers in the flowchart of Fig. 2, these indicate steps which execute the same process.

[0056] The processes of steps S1 to S8 of the anomaly detection method according to the first modified example in Fig. 4 are the same as those of the anomaly detection method according to the embodiment in Fig. 2, and only the processes of steps S11 and S12 are different from the anomaly detection method according to the embodiment in Fig. 2. Specifically, in the anomaly detection method shown in Fig. 2, one cleaning process (step S2) is performed after one film formation process (step S1), and then the anomaly detection process from step S3 onwards is performed.

[0057] 4, in step S11, it is determined whether the film formation process in step S1 has been performed a predetermined number of times, and the processes in steps S1 and S11 are repeated until the film formation process has been performed the predetermined number of times. After the predetermined number of film formations (hereinafter also referred to as cumulative film formation), a cleaning process in step S2 is performed, and then the abnormality detection process in steps S3 and after is performed.

[0058] In this way, in the case of cumulative film formation, cleaning is performed after film formation is cumulatively repeated for a certain period of time, and then the abnormality detection process of steps S3 to S6 and S12 is performed. Then, the pressure change rate is calculated, and if it is determined in step S12 that the pressure change rate is equal to or greater than a preset threshold value x2%, it is determined that the pressure change is not large compared to when the injector is new, that is, no abnormality is detected, and the process returns to step S1 to perform cumulative film formation, etc. for the next lot. On the other hand, if it is determined that the pressure change rate is less than the threshold value x2%, it is determined that the pressure change is large compared to when the injector is new, that is, an abnormality is detected, and the operation of the processing device 1 is stopped or the injectors 28, 29 are replaced before they are damaged, and this process ends.

[0059] In the case of cumulative film formation, the threshold value x2 for determining an abnormality is also set in advance. The abnormality detection method according to the first modification and the setting of the threshold value x2 will be described with reference to the graph in FIG. 5. The graph in FIG. 5 shows a simulation result showing the relationship between the etching amount of the injector and the gas supply ratio from each gas hole. The horizontal axis of the graph shows the etching amount of the injectors 28 and 29, and the vertical axis shows the ratio of N2 supplied from each gas hole 28a, 29a of the injectors 28 and 29.2 The gas flow ratio is shown.

[0060] FIG. 5(a) shows five gas holes 28a of the injector 28 ("TOP INJ"), numbered 1 to 5 from the bottom, and N 2 The flow rate ratio of the gases is shown. 2 The total flow rate ratio of the gases is 100%. When the injector 28 is new, that is, when the etching amount is 0, the N 2 The gas flow rate ratio is set to an initial value, and as the etching amount increases, the N 2 It can be seen that the gas flow rate ratio changes. For example, when the etching depth of the injector 28 reaches 0.25 mm, the N 2 It can be determined that the balance of the gas flow rate ratio is completely lost from the initial value ratio, and the desired film formation performance cannot be obtained. Therefore, the etching amount "0.25" is extracted from the graph in FIG. 5(a) and applied to the injector 28 ("TOP INJ") shown in the black circle in FIG. 3(a), and the pressure change rate when the etching amount is 0.25 mm, which is about 75%, is set as the threshold value x2 in advance and stored in the memory unit. However, the method of setting the threshold value x2 is not limited to this.

[0061] Then, in step S6 of FIG. 4, the pressure change rate is calculated from the pressure measured by the pressure gauge 66. If, in step S12, it is determined that the pressure change rate is less than the threshold value x2%, it is determined that an abnormality has been detected, and operation is stopped and the injector 28 is replaced in step S8, and this process is terminated.

[0062] Using the graph in FIG. 5(a), the amount of N supplied from each gas hole 28a of the injector 28 is 2 The gas flow rate ratio and anomaly detection have been described above, but the same applies to the injector 29 and other injectors. For example, FIG. 5(b) shows two gas holes 29a of the injector 29 ("CTR INJ"), numbered 1 and 2 from the bottom, and N gas supplied from the gas holes 29a 1 and 2. 2The flow rate ratio of the gases is shown. 2 The total flow rate ratio of the gases is 100%. In this case, the N 2 The gas flow rate ratio is set to an initial value, and as the etching amount increases, the N 2 It can be seen that the gas flow rate ratio changes. When the etching depth of the injector 29 reaches about 0.3 mm, the N 2 It can be determined that the gas balance is completely lost from the initial value, and the desired film formation performance cannot be obtained. Therefore, the etching amount "0.3" is extracted from the graph in Fig. 5(b), applied to the injector 29 ("CTR INJ") shown in the white circle in Fig. 3(a), and the pressure change rate when the etching amount is 0.3 mm is preset as the threshold value and stored in the memory unit.

[0063] FIG. 5(c) shows an injector ("ALL INJ") that has more gas holes than injector 28, with 35 gas holes, more than in injector 28 shown in FIG. 5(a). The gas holes are numbered 1 to 35 from the bottom, and N is supplied from the 35 gas holes. 2 The gas flow ratios are shown. N supplied from 35 gas holes. 2 The total flow rate ratio of the gases is 100%. FIG. 5(d) shows an injector ("BTM INJ") that is shorter than injector 29 and has 37 gas holes. The gas holes are numbered 1 to 37 from the bottom, and the N 2 The gas flow ratio is shown. N supplied from 37 gas holes. 2 The gas flow rate ratios add up to 100%.

[0064] Regardless of the length of the injector, the N gas supplied from each gas hole 2If the imbalance of the gas flow rate ratio exceeds the allowable range, the desired film formation performance cannot be obtained. For this reason, the threshold value for judging the abnormality detection used in step S12 of FIG. 4 is set in advance using the graphs of FIG. 5 and FIG. 3, and stored in the storage unit. This allows accurate abnormality detection for each injector. That is, in step S12 of FIG. 4, when multiple injectors are installed, the judgment is made for each of the multiple injectors. At this time, multiple pressure gauges 66 may be attached to the branching parts of the gas pipe 20 connected to each of the multiple injectors, and the abnormality may be detected from the magnitude relationship between the rate of change of pressure measured by the pressure gauge 66 arranged near each injector and the threshold value for each injector. Similarly, in step S7 of FIG. 2, step S24 of FIG. 6 and step S34 of FIG. 7 described later, when multiple injectors are installed, the judgment process is made for each of the multiple injectors, and the abnormality of each injector is detected.

[0065] [Variation 2] Next, the abnormality detection method according to the second modification will be described with reference to the flowchart of the abnormality detection method according to the second modification in Fig. 6. This description is an example of a case where the conductance in the injectors 28, 29, etc. decreases as a result of the injectors 28, 29, etc. being formed with a film by the film formation process, and the measured pressure increases above the initial pressure. In other words, it is assumed that the gas holes 28a, 29a become clogged (shrinked) due to the film formation. This process is controlled by the control unit 90.

[0066] In this process, an abnormality detection method is performed during a film formation process. That is, in step S21, a process gas (film formation gas) is output from the process gas source 21, supplied to the injectors 28 and 29 through the gas pipe 20, and discharged horizontally into the inner tube 11 from the gas holes 28a and 29a of the injectors 28 and 29. Next, in step S22, a film formation process is performed on the substrate.

[0067] During the film formation process, the process gas is stably supplied at a flow rate controlled to a predetermined value by the flow rate controller 25. Next, in step S23, the pressure gauge 66 measures the pressure during the film formation process. Next, in step S24, the control unit 90 calculates a pressure change rate using the measured pressure. The storage unit stores a preset threshold value x3 used to determine an abnormality during the film formation process. The control unit 90 compares the pressure change rate with the threshold value x3, and if it is determined that the pressure change rate is less than the threshold value x3, the control unit 90 returns to step S21 and continues the film formation process.

[0068] On the other hand, if the control unit 90 determines that the pressure change rate is equal to or greater than the threshold value x3, the process proceeds to step S25, where the processing device 1 is stopped from operating and the injector is replaced, and the process ends.

[0069] In the abnormality detection method according to Modification 2, the abnormality detection process is performed during the film formation process. In contrast to this, the abnormality detection process may be performed during the cleaning process as in the abnormality detection method according to Modification 3 described next.

[0070] [Variation 3] Next, an abnormality detection method according to Modification 3 will be described with reference to a flowchart showing the abnormality detection method according to Modification 3 in FIG.

[0071] In this process, an abnormality detection method is performed during the cleaning process. That is, in step S31, a process gas (cleaning gas) is output from the process gas source 21, supplied to the injectors 28 and 29 through the gas pipe 20, and discharged horizontally into the inner tube 11 from the gas holes 28a and 29a of the injectors 28 and 29. Next, in step S32, a cleaning process is performed inside the process container 10.

[0072] During the cleaning process, the process gas is stably supplied while being controlled to a predetermined flow rate by the flow rate controller 25. Next, in step S33, the pressure gauge 66 measures the pressure during the cleaning process. Next, in step S34, the control unit 90 calculates the pressure change rate using the measured pressure. The memory unit stores a preset threshold value x4 used to determine an abnormality during the cleaning process. The control unit 90 compares the pressure change rate with the threshold value x4, and if it is determined that the pressure change rate is equal to or greater than the threshold value x4, the control unit 90 returns to step S31 and continues the cleaning process.

[0073] On the other hand, when the control unit 90 determines that the pressure change rate is less than the threshold value x4, the process proceeds to step S35, where the processing device 1 is stopped from operating and the injector is replaced, and the process ends.

[0074] As described above, the abnormality detection process of the present disclosure may be performed during the film formation process of any lot, or may be performed between film formation processes for each lot. The abnormality detection process may be performed after the film formation process of any lot and before the next cleaning process, or may be performed during the cleaning process. The abnormality detection process may be performed during or after a substrate process other than the film formation process (e.g., an etching process).

[0075] In either case, in the anomaly detection process, it is important that the gas type, gas flow rate, and gas supply time are roughly the same as those measured by the pressure gauge 66 when the etching amount is 0 (i.e., when the injector is new), and that the pressure is measured in a state where the gas supply is stabilized.

[0076] As described above, the abnormality detection method of this embodiment detects an abnormality in the supply of gas into the processing vessel 10 of the processing apparatus 1. Specifically, by monitoring the rate of change in pressure from when the injectors 28, 29 are brand new, an abnormality in at least one of the injectors 28, 29 and the gas piping 20 can be detected.

[0077] In addition, the abnormality can be identified based on the calculated pressure change rate. For example, when the pressure change rate from the new injector is 60% or more and less than 80%, it is predicted that the injector is damaged or the gas hole is enlarged, and when the pressure change rate is less than 60%, it is predicted that the injector is installed improperly and causing a leak. For example, the abnormality can be identified from the magnitude of the change in conductance indicated by the pressure change rate.

[0078] The anomaly detection method and processing device according to the embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments may be modified and improved in various ways without departing from the spirit and scope of the appended claims. The matters described in the above embodiments may be configured in other ways without any inconsistency, and may be combined without any inconsistency.

[0079] The processing apparatus of the present disclosure may be an apparatus that performs a predetermined process (for example, a film forming process, an etching process, a cleaning process, etc.), and is not limited to the processing apparatus 1 shown in Fig. 1. Furthermore, the process performed by the processing apparatus of the present disclosure may or may not use plasma. [Explanation of symbols]

[0080] 1 Processing equipment 2 Gas supply section 10 Processing vessel 20 Gas piping 28, 29 Injector 30 Exhaust section 40 Heating section 50 Cooling section 60 Temperature Sensor 66 Pressure Gauge 90 Control section

Claims

1. A method for detecting an abnormality when performing an abnormality detection process mode separately from a substrate processing or cleaning process mode, comprising: (A) exhausting gas from a processing vessel of the processing apparatus; (B) after the step (A), supplying a gas controlled to a predetermined flow rate through a gas piping to a gas supply pipe connected to the gas piping, and introducing the gas into a reaction region in the processing vessel from a gas hole of the gas supply pipe; (C) measuring the pressure in the gas piping by a pressure gauge attached to the gas piping while carrying out the process (B); (D) detecting an abnormality in at least one of the gas supply pipe and the gas piping based on the measured pressure dropping below a predetermined value; The anomaly detection method includes:

2. In the step (A), gas is also exhausted from the gas supply pipe and the gas piping. The anomaly detection method according to claim 1 .

3. The step (D) is The abnormality is detected based on a rate of change of the measured pressure relative to a pressure measured by the pressure gauge when the gas supply pipe is new. The abnormality detection method according to claim 1 or 2.

4. The step (D) is when the abnormality is detected, the operation of the processing apparatus is stopped and the gas supply pipe is replaced. The anomaly detection method according to claim 3 .

5. The abnormality detection processing mode is executed after performing a substrate processing or a cleaning processing. The abnormality detection method according to any one of claims 1 to 4.

6. The step (D) detects the abnormality by detecting the pressure increasing above a predetermined value in addition to the pressure decreasing below a predetermined value, The type of abnormality includes at least one of a breakage of the gas supply pipe, a decrease in the wall thickness of the gas supply pipe, an increase in the wall thickness of the gas supply pipe, an enlargement of the gas hole, a decrease in the gas hole, a poor installation of the gas supply pipe, a defective connection between the gas supply pipe and the gas piping, and a change in conductance of the gas supply pipe. The abnormality detection method according to any one of claims 1 to 5.

7. a gas supply pipe having a gas supply hole and supplying a gas from the gas supply hole to a reaction region in a processing vessel; A gas pipe connected to the gas supply pipe; A pressure gauge attached to the gas piping for measuring a pressure; a control unit for controlling a process in the process vessel, The control unit is A mode for detecting an abnormality is performed separately from a mode for performing a substrate processing or cleaning processing, In the abnormality detection processing mode, (A) exhausting gas from within the processing vessel; (B) after the step (A), supplying a gas controlled to a predetermined flow rate to the gas supply pipe through the gas piping and introducing the gas into a reaction region in the processing vessel through a gas hole of the gas supply pipe; (C) measuring the pressure in the gas piping by a pressure gauge attached to the gas piping while carrying out the process (B); (D) detecting an abnormality in at least one of the gas supply pipe and the gas piping based on the measured pressure dropping below a predetermined value. Processing unit.

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