Film mask

Abstract

The present application provides a film mask including a first layer and a second layer, the first layer and the second layer being arranged in a laminated manner, the second layer including a viscous film, the first layer having an absorption coefficient of 20% or more when the thickness is 200 μm or less under irradiation with an ultraviolet light source, where the wavelength of the ultraviolet light source is 355±15 nm, or the first layer having an absorption coefficient of 20% or more when the thickness is 200 μm or less under irradiation with a green light source, where the wavelength of the green light source is 530±15 nm, or the first layer having an absorption coefficient of 20% or more when the thickness is 200 μm or less under irradiation with an infrared light source, where the wavelength of the infrared light source is 1045±20 nm, and the visible light transmittance of the first layer is 90% or less. The film mask of the present application utilizes optical properties, and requires less power from the light source than ordinary films, which can save costs. Furthermore, the patterning content is formed by a low-power light source, the cost of the viscous film is low, and there is no need to match complex processes to realize the patterning process, which can reduce costs and improve efficiency.

Description

Technical Field

[0001] This application relates to the field of film material technology, and particularly to film masks.

[0002] <Cross - reference to related applications> This application claims the priority of a Chinese patent application with the application number 202111063887.5 and the title "Film Mask", which was filed with the China National Intellectual Property Administration on September 10, 2021, and all of its contents are incorporated herein by reference.

Background Art

[0003] This method of manufacturing area patterns using film masks is widely applied in high - tech fields such as semiconductors, display panels, touch panels, solar cells, circuit masks, and precision printing. The currently commonly used methods are to use photoresist development or patterned metal masks. The photoresist process is complex, with high material costs, and further requires subsequent chemical cleaning, increasing the cost for environmental protection. When metal masks are applied particularly to solar cells with uneven surfaces, the metal masks cannot be adhered to the solar cell surface, the accuracy of the patterning content is not high, and regular maintenance cleaning is required during use, increasing the maintenance cost.

Summary of the Invention

Means for Solving the Problems

[0004] One object of this application is to provide a film mask, which includes a first layer and a second layer, the first layer and the second layer are laminated and arranged, and the second layer includes a viscous film. When irradiated by an ultraviolet light source, the absorption coefficient of the first layer is 20% or more when the thickness is 200 μm or less. Here, the wavelength of the ultraviolet light source is 355 ± 15 nm. Or, when irradiated by a green light source, the absorption coefficient of the first layer is 20% or more when the thickness is 200 μm or less. Here, the wavelength of the green light source is 530 ± 15 nm. Or, when irradiated by an infrared light source, the absorption coefficient of the first layer is 20% or more when the thickness is 200 μm or less. Here, the wavelength of the infrared light source is 1045 ± 20 nm. The visible light transmittance of the first layer is 90% or less.

[0005] Furthermore, when irradiated by an ultraviolet light source, the absorption coefficient of the first layer is 50% or more when the thickness is 200 μm or less. Preferably, when irradiated by an ultraviolet light source, the absorption coefficient of the first layer is 80% or more when the thickness is 200 μm or less. Or, when irradiated by a green light source, the absorption coefficient of the first layer is 50% or more when the thickness is 200 μm or less. Preferably, when irradiated by a green light source, the absorption coefficient of the first layer is 80% or more when the thickness is 200 μm or less. Or, when irradiated by an infrared light source, the absorption coefficient of the first layer is 50% or more when the thickness is 200 μm or less. Preferably, when irradiated by an infrared light source, the absorption coefficient of the first layer is 80% or more when the thickness is 200 μm or less.

[0006] Furthermore, the first layer includes a polymer film. The material of the polymer film is a polymer polymer and includes one or more of polyethylene terephthalate (PET), polyolefin film (PO), polyimide (PI), polyvinyl chloride (PVC), and biaxially oriented polypropylene (BOPP).

[0007] Furthermore, the thickness of the first layer is 1 - 100 μm, the preferred thickness is 5 - 40 μm, and the more preferred thickness is 10 - 25 μm.

[0008] Furthermore, when the thickness of the second layer is 200 μm or less under the irradiation of an ultraviolet light source, the absorption coefficient is 5% or more, where the wavelength of the ultraviolet light source is 355 ± 15 nm, or when the thickness of the second layer is 200 μm or less under the irradiation of a green light source, the absorption coefficient is 5% or more, where the wavelength of the green light source is 530 ± 15 nm, or when the thickness of the second layer is 200 μm or less under the irradiation of an infrared light source, the absorption coefficient is 5% or more, where the wavelength of the infrared light source is 1045 ± 20 nm.

[0009] Furthermore, when the thickness of the second layer is 200 μm or less under the irradiation of an ultraviolet light source, the absorption coefficient is 50% or more. Preferably, when the thickness of the second layer is 200 μm or less under the irradiation of an ultraviolet light source, the absorption coefficient is 80% or more. Or, when the thickness of the second layer is 200 μm or less under the irradiation of a green light source, the absorption coefficient is 50% or more. Preferably, when the thickness of the second layer is 200 μm or less under the irradiation of a green light source, the absorption coefficient is 80% or more. Or, when the thickness of the second layer is 200 μm or less under the irradiation of an infrared light source, the absorption coefficient is 50% or more. Preferably, when the thickness of the second layer is 200 μm or less under the irradiation of an infrared light source, the absorption coefficient is 80% or more.

[0010] Furthermore, the thickness of the second layer is 1 - 30 μm, the preferred thickness is 2 - 15 μm, and the more preferred thickness is 3 - 10 μm.

[0011] Furthermore, the material of the pressure-sensitive adhesive film in the second layer includes one or more of silica gel, acrylic adhesives, polyurethane, rubber, and polyisobutylene.

[0012] Furthermore, the peel strength of the second layer at the first temperature is 1 - 50 gf / cm, the preferred peel strength is 5 - 30 gf / cm, and the more preferred peel strength is 6 - 15 gf / cm. Here, the first temperature is 15 - 30°C, preferably, the first temperature is 20 - 30°C, and more preferably, the first temperature is 20 - 25°C.

[0013] Furthermore, the material of the adhesive film in the second layer includes a unidirectional temperature-sensitive adhesive that exhibits irreversibility under different temperature conditions of viscosity. The peel strength of the unidirectional temperature-sensitive adhesive decreases as the temperature rises.

[0014] Furthermore, the material of the adhesive film in the second layer includes a heat-degradable viscose that exhibits irreversibility under conditions where the viscosity is at or above a second temperature. The heat-degradable viscose has a peel strength at or above the second temperature that is smaller than the peel strength below the second temperature. Here, the second temperature is 70°C, preferably, the second temperature is 70 - 150°C, and more preferably, the second temperature is 90 - 150°C.

[0015] Furthermore, the peel strength is 5 - 30 gf / cm, and the temperature is 50 - 140°C.

[0016] Furthermore, the material of the adhesive film in the second layer includes a bidirectional temperature-sensitive adhesive that exhibits reversibility under different temperature conditions of viscosity. The peel strength of the bidirectional temperature-sensitive adhesive increases as the temperature rises.

[0017] Furthermore, the peel strength is 5 - 30 gf / cm, and the temperature is 50 - 140°C.

[0018] Furthermore, the thickness of the film mask is 10 - 100 μm, and the preferred thickness is 10 - 50 μm.

[0019] Furthermore, the film mask further includes a third layer. The third layer is laminated and disposed on the side of the second layer away from the first layer. The third layer includes a release film. The release film is a polymer and includes one or more of polyethylene terephthalate (PET), polyolefin film (PO), polyimide (PI), polyvinyl chloride (PVC), and biaxially oriented polypropylene (BOPP).

[0020] Furthermore, the thickness of the third layer is 1 - 100 μm, the preferred thickness is 5 - 40 μm, and the more preferred thickness is 10 - 25 μm.

[0021] Another object of the present application is to provide a film forming process for a solar cell using the film mask.

[0022] Furthermore, the film forming process includes a functional layer film forming process and / or a conductive layer film forming process. The functional layer film forming includes dielectric film forming, and the conductive layer film forming includes transparent conductive layer film forming and / or metal conductive layer film forming.

Advantages of the Invention

[0023] As described above, the present application provides a film mask, sets specific optical properties for the first layer, for example, by setting limitations on properties such as the absorption coefficient and visible light transmittance, irradiates the first layer with a light source in a specific wavelength range such as an ultraviolet laser, a green laser, or an infrared laser, patterns the first layer, and further utilizes the characteristic that the viscous film of the second layer has viscosity to attach the patterned film mask to the object to be processed, and manufactures subsequent area patterns. It has the following characteristics.

[0024] Compared with photoresist development, the film mask according to the present application utilizes optical properties, has lower required power for the light source compared to a normal film, and can save costs. Furthermore, the patterning content is formed with a low-power light source, the cost of the viscous film is low, and there is no need to match a complicated process to realize the patterning process, so the cost can be reduced and the efficiency can be improved. Also, compared with a metal mask, the film mask according to this embodiment can be firmly bonded to the surface of the object to be processed through the viscous film, so that the film mask and the surface can be reliably bonded. Compared with the metal mask method, the patterning content can be made more accurate and the quality can be improved without being affected by the watermark area.

[0025] The above description is only an outline of the technical solution of the present application. In order to more clearly understand the technical means of the present application and be able to implement it according to the content of the specification, and to make the above and other objects, features and advantages of the present application more clearly understood and easier to understand, specific embodiments of the present application are given below.

Brief Description of the Drawings

[0026] In order to more clearly explain the technical solution in the embodiment of the present application or the prior art, the drawings necessary for the description of the embodiment or the prior art are briefly described. Of course, the drawings in the following description are some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative labor.

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Embodiments for Carrying Out the Invention

[0027] In order to more clearly illustrate the objectives, technical solutions and advantages of the embodiments of the present application, hereinafter, with reference to the drawings in the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described. Of course, the described embodiments are only some embodiments of the present application, not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor belong to the protection scope of the present application.

[0028] In order to more clearly illustrate the technical problems to be solved, technical solutions and beneficial effects of the present application, the present application will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described in this specification are only for explaining the present application, not for limiting the present application.

[0029] In the description, claims, and above-mentioned drawings of the present application, terms such as "first", "second", "third", "fourth", etc. (if any) are not for explaining a specific order or priority, but for distinguishing similar objects. It should be understood that the data used in this way is interchangeable where appropriate so that the embodiments of the present application described in this specification can be implemented in an order other than, for example, the order illustrated or described in this specification. Further, terms such as "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device comprising a series of steps or units is not limited to the steps or units explicitly listed, and may include steps or units not explicitly listed, or other steps or units inherent to these processes, methods, products, or devices.

[0030] Hereinafter, the technical solution of the present application will be described in detail based on specific embodiments. These specific embodiments below can be combined with each other, and for the same or similar concepts or processes, they may not be described again in some embodiments.

[0031] Example 1: Film mask with a two-layer laminated structure The embodiment of the present application provides a structure of a film mask with a two-layer laminated structure. FIG. 1 is a schematic diagram of the structure of the film mask of Example 1 of the present application. As shown in FIG. 1, the structure of the film mask includes a first layer 1 and a second layer 2, the first layer 1 and the second layer 2 are arranged in a laminated manner, and the second layer 2 includes a viscous film.

[0032] The first layer 1 has an absorption coefficient of 20% or more when the thickness is 200 μm or less under the irradiation of an ultraviolet light source, where the wavelength of the ultraviolet light source is 355 ± 15 nm.

[0033] Alternatively, the first layer 1 has an absorption coefficient of 20% or more when the thickness is 200 μm or less under the irradiation of a green light source, where the wavelength of the green light source is 530 ± 15 nm.

[0034] Alternatively, when the first layer 1 is irradiated with an infrared light source, the absorption coefficient is 20% or more when the thickness is 200 μm or less, where the wavelength of the infrared light source is 1045 ± 20 nm.

[0035] The visible light transmittance of the first layer 1 is 90% or less.

[0036] The film mask according to this embodiment sets specific optical properties for the first layer. For example, by setting limitations on properties such as the absorption coefficient and visible light transmittance, the first layer is irradiated with a light source in a specific wavelength range such as an ultraviolet laser, a green laser, or an infrared laser, and the first layer is patterned. Furthermore, by utilizing the characteristic that the viscous film of the second layer has viscosity, the patterned film mask is adhered to the object to be processed, and subsequent area patterns are manufactured.

[0037] Compared with photoresist development, the film mask according to this embodiment utilizes optical properties, has a lower required power of the light source compared to a normal film, and can save costs. Furthermore, the patterning content is formed by a low-power light source, the cost of the viscous film is low, and there is no need to match a complex process to realize the patterning process, so the cost can be reduced and the efficiency can be improved. Also, compared with a metal mask, the film mask according to this embodiment can be reliably bonded to the surface of the object to be processed through the viscous film, and compared with the metal mask method, the patterning content can be made more accurate and the quality can be improved without being affected by the watermark area.

[0038] Example 2: Film mask with a three-layer laminated structure The embodiment of the present application provides the structure of a film mask with a three-layer laminated structure. FIG. 2 is a schematic diagram of the structure of the film mask of Example 2 of the present application. As shown in FIG. 2, the structure of the film mask is It includes a first layer 1, a second layer 2 and a third layer 3. The first layer 1, the second layer 2 and the third layer 3 are stacked and arranged in sequence. The third layer 3 is stacked and arranged on the side of the second layer 2 away from the first layer 1. The second layer 2 includes a viscous film, and the third layer 3 includes a release film.

[0039] When irradiated by an ultraviolet light source, the absorption coefficient of the first layer 1 is 20% or more when the thickness is 200 μm or less. Here, the wavelength of the ultraviolet light source is 355 ± 15 nm.

[0040] Alternatively, when irradiated by a green light source, the absorption coefficient of the first layer 1 is 20% or more when the thickness is 200 μm or less. Here, the wavelength of the green light source is 530 ± 15 nm.

[0041] Alternatively, when irradiated by an infrared light source, the absorption coefficient of the first layer 1 is 20% or more when the thickness is 200 μm or less. Here, the wavelength of the infrared light source is 1045 ± 20 nm.

[0042] The visible light transmittance of the first layer 1 is 90% or less.

[0043] In addition to the above embodiments, the film mask according to this embodiment further includes a release film. The role of the release film is to protect the viscous film from sticking to other things during the patterning process of the film mask, make it easy to peel off the release film after patterning, and enable the patterned film mask to be adhered to the object to be processed.

[0044] Hereinafter, some features described in the above embodiments will be further specifically described.

[0045] Furthermore, when irradiated by an ultraviolet light source, the absorption coefficient of the first layer is 50% or more when the thickness is 200 μm or less. More preferably, when irradiated by an ultraviolet light source, the absorption coefficient of the first layer is 80% or more when the thickness is 200 μm or less.

[0046] Alternatively, when irradiated with a green light source, the first layer has an absorption coefficient of 50% or more when the thickness is 200 μm or less, and preferably, when irradiated with a green light source, the first layer has an absorption coefficient of 80% or more when the thickness is 200 μm or less.

[0047] Alternatively, when irradiated with an infrared light source, the first layer has an absorption coefficient of 50% or more when the thickness is 200 μm or less, and preferably, when irradiated with an infrared light source, the first layer has an absorption coefficient of 80% or more when the thickness is 200 μm or less.

[0048] In combination with the above description, for example, in the case of an ultraviolet light source, the absorption coefficient when the thickness is 200 μm or less may be 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80% or any range therebetween.

[0049] In combination with the above description, for example, in the case of a green light source, the absorption coefficient when the thickness is 200 μm or less may be 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80% or any range therebetween.

[0050] In combination with the above description, for example, in the case of an infrared light source, the absorption coefficient when the thickness is 200 μm or less is 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80% or any range therebetween.

[0051] Furthermore, the first layer includes a polymer film, and the material of the polymer film is a polymer polymer, including one or more of polyethylene terephthalate (PET), polyolefin film (PO), polyimide (PI), polyvinyl chloride (PVC), biaxially oriented polypropylene (BOPP), etc.

[0052] In combination with the above description, for example, when the visible light transmittance of the first layer is 90% or less, the visible light transmittance may be 0%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90% or any range therebetween.

[0053] Furthermore, the thickness of the first layer is 1 - 100 μm, the preferred thickness is 5 - 40 μm, and the more preferred thickness is 10 - 25 μm.

[0054] In combination with the above description, for example, the thickness of the first layer is 1 μm, 5 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 85 μm, 90 μm, 95 μm, 100 μm or any range therebetween.

[0055] However, the characteristic setting of the absorption coefficient of the first layer for the above various light sources can usually be realized by methods such as adjusting the color of the first layer and adding additives with absorption characteristics. For example, in order to meet the requirements of the absorption coefficient, the PET film contains various dyes, additives, color masters or other substances. For example, black particles are added to the BOPP film to achieve an absorption coefficient of 100%, and further, for example, gray particles are added to the PO film to achieve an absorption coefficient of 50%.

[0056] Furthermore, the pressure-sensitive adhesive film contained in the second layer has an absorption coefficient of 5% or more when the thickness is 200 μm or less under the irradiation of an ultraviolet light source, where the wavelength of the ultraviolet light source is 355 ± 15 nm, or the second layer has an absorption coefficient of 5% or more when the thickness is 200 μm or less under the irradiation of a green light source, where the wavelength of the green light source is 530 ± 15 nm, or the second layer has an absorption coefficient of 5% or more when the thickness is 200 μm or less under the irradiation of an infrared light source, where the wavelength of the infrared light source is 1045 ± 20 nm.

[0057] In combination with the above description, the wavelength of the ultraviolet light source is 340 nm, 345 nm, 350 nm, 355 nm, 360 nm, 365 nm, 370 nm, or any range therebetween. For example, as the ultraviolet light source here, a laser light source such as an ultra-high speed pulsed laser with a pulse width on the order of picoseconds or femtoseconds, and further, for example, a short pulsed laser with a pulse width on the order of microseconds or nanoseconds can be used.

[0058] In combination with the above description, the wavelength of the green light source is 515 nm, 520 nm, 525 nm, 530 nm, 535 nm, 540 nm, 545 nm, or any range therebetween. For example, as the green light source here, a laser light source such as an ultra-high speed pulsed laser with a pulse width on the order of picoseconds or femtoseconds, and further, for example, a short pulsed laser with a pulse width on the order of microseconds or nanoseconds can be used.

[0059] In combination with the above description, the wavelength of the infrared light source is 1025 nm, 1030 nm, 1035 nm, 1040 nm, 1045 nm, 1050 nm, 1055 nm, 1060 nm, 1065 nm, or any range therebetween. For example, as the infrared light source here, a laser light source such as an ultra-high speed pulsed laser with a pulse width on the order of picoseconds or femtoseconds, and further, for example, a short pulsed laser with a pulse width on the order of microseconds or nanoseconds can be used.

[0060] Furthermore, the visible light transmittance of the second layer is 100% or less, and preferably, the visible light transmittance of the second layer is 90% or less.

[0061] In combination with the above description, for example, regarding the visible light transmittance of the second layer, the visible light transmittance may be 0%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 100%, or any range therebetween.

[0062] Furthermore, when the second layer has a thickness of 200 μm or less under irradiation of an ultraviolet light source, the absorption coefficient is 50% or more, and preferably, when the second layer has a thickness of 200 μm or less under irradiation of an ultraviolet light source, the absorption coefficient is 80% or more.

[0063] Refer to the above description regarding the absorption coefficient for the absorption coefficient here.

[0064] However, in combination with the above description, this thin film mask needs to be designed to have a high absorption rate within a certain wavelength range in order to efficiently absorb the laser energy and improve the energy efficiency and turning accuracy in, for example, patterning of the thin film mask using a laser light source. Specifically, it needs to be designed according to the laser light source used.

[0065] Furthermore, the material of the adhesive film contained in the second layer includes one or more of silica gel, acrylic adhesives, polyurethane, rubber, polyisobutylene, etc.

[0066] Furthermore, the thickness of the second layer is 1 - 30 μm, the preferred thickness is 2 - 15 μm, and the more preferred thickness is 3 - 10 μm.

[0067] In combination with the above description, for example, the thickness of the second layer is 1 μm, 5 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm or any range therebetween.

[0068] Here, when further subdividing the characteristics of the adhesive film, when the material of the adhesive film includes one or more of silica gel, acrylic adhesives, polyurethane, rubber, polyisobutylene, etc., the range of the peel strength of the adhesive film at the first temperature is 1 - 50 gf / cm, the preferred range of the peel strength is 5 - 30 gf / cm, and the more preferred range of the peel strength is 6 - 15 gf / cm. Here, the first temperature is 15 - 30 °C, preferably, the first temperature is 20 - 30 °C, and more preferably, the first temperature is 20 - 25 °C.

[0069] When the material of the adhesive film contains a unidirectional thermosensitive adhesive, the viscosity of the unidirectional thermosensitive adhesive shows irreversibility under different temperature conditions, and the peel strength of the unidirectional thermosensitive adhesive decreases with the increase of temperature. The function of using the unidirectional thermosensitive adhesive here is to make it easier to peel off the film mask when applying temperature.

[0070] Specifically, for the unidirectional thermosensitive adhesive in the adhesive film of the second layer, the peel strength is 5 - 30 gf / cm and the temperature is 50 - 140 °C. For example, when the temperature is 50 °C, the peel strength is 25 gf / cm; when the temperature is 70 °C, the peel strength is 21 gf / cm; when the temperature is 100 °C, the peel strength is 15 gf / cm; when the temperature is 140 °C, the peel strength is 5 gf / cm. However, the above data are merely examples, and the specific parameter requirements can be corresponding according to the requirements in actual production operations.

[0071] When the material of the adhesive film contains heat - degraded viscose, the viscosity of the heat - degraded viscose shows irreversibility under conditions of a second temperature or higher, and the heat - degraded viscose has a lower peel strength at a second temperature or higher than that at a temperature lower than the second temperature. That is, when the heat - degraded viscose is at a second temperature or higher, the peel strength decreases, and preferably, the peel strength decreases rapidly.

[0072] The specific second temperature is 70 °C, the preferred second temperature is 70 - 150 °C, and the more preferred second temperature is 90 - 150 °C.

[0073] When the material of the adhesive film contains a bidirectional thermosensitive adhesive, the viscosity of the bidirectional thermosensitive adhesive shows reversibility under different temperature conditions, and the peel strength of the bidirectional thermosensitive adhesive increases with the increase of temperature. The function of using the bidirectional thermosensitive adhesive here is to make it easier to peel off the film mask when applying temperature.

[0074] Specifically, the bidirectional temperature-sensitive adhesive in the second layer's viscous film has a peel strength of 5-30 gf / cm and a temperature range of 50-140 °C. For example, when the temperature is 50 °C, the peel strength is 5 gf / cm; when the temperature is 80 °C, the peel strength is 15 gf / cm; when the temperature is 110 °C, the peel strength is 20 gf / cm; and when the temperature is 140 °C, the peel strength is 30 gf / cm. However, the above data are merely examples, and the specific parameter requirements can be adjusted according to the requirements in actual production operations.

[0075] Combined with the above description, for example, the peel strength of the viscous film can be 1 gf / cm, 2 gf / cm, 3 gf / cm, 4 gf / cm, 5 gf / cm, 6 gf / cm, 7 gf / cm, 8 gf / cm, 9 gf / cm, 10 gf / cm, 11 gf / cm, 12 gf / cm, 13 gf / cm, 14 gf / cm, 15 gf / cm, 16 gf / cm, 17 gf / cm, 18 gf / cm, 19 gf / cm, 20 gf / cm, 21 gf / cm, 22 gf / cm, 23 gf / cm, 24 gf / cm, 25 gf / cm, 26 gf / cm, 27 gf / cm, 28 gf / cm, 29 gf / cm, 30 gf / cm, 35 gf / cm, 40 gf / cm, 45 gf / cm, 50 gf / cm, 55 gf / cm, 60 gf / cm, 100 gf / cm, 150 gf / cm, 300 gf / cm, 400 gf / cm, 500 gf / cm, 1000 gf / cm or any range between them.

[0076] For example, the temperature can be 5 °C, 10 °C, 15 °C, 20 °C, 25 °C, 30 °C, 35 °C, 40 °C, 45 °C, 50 °C, 55 °C, 60 °C, 65 °C, 70 °C, 75 °C, 80 °C, 85 °C, 90 °C, 95 °C, 100 °C, 105 °C, 110 °C, 115 °C, 120 °C, 125 °C, 130 °C, 135 °C, 140 °C, 145 °C, 150 °C, 155 °C, 160 °C, 165 °C, 170 °C, 175 °C, 180 °C, 185 °C, 190 °C, 195 °C, 200 °C or any range between them.

[0077] The adhesive film must be able to adhere firmly to the film mask on the object to be processed and should have a certain peel strength to prevent curling or warping. For example, in certain scenarios, it is necessary to work under conditions of 20 °C or 25 °C and with a peel strength within the range of 15 - 20 gf / cm. Further, for example, in another scenario, it is necessary to work under conditions of 80 °C and with a peel strength within the range of 30 - 35 gf / cm. Overall, the selection of the specific peel strength can be adjusted according to the usage scenario and requirements as needed.

[0078] Here, regarding the definition of peel strength, the peel strength test value of the tape in the National Standard of the People's Republic of China GB / T2792 - 2014 for steel plates can be used as the certification method for the peel strength of this application. Next, the thickness of the film mask in the above - mentioned embodiment will be further described.

[0079] Furthermore, the thickness of the film mask is 10 - 100 μm, and the preferred thickness is 10 - 50 μm.

[0080] Here, considering the overall thickness of the film mask, in combination with the above - mentioned description, for example, the overall thickness of the film mask is 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 85 μm, 90 μm, 95 μm, 100 μm or any range therebetween.

[0081] For different light sources such as laser light sources and the usage requirements of film mask patterning, it is necessary to design and control the overall thickness of the film mask to meet the actual needs of the light source and patterning.

[0082] Overall, the selection of the overall thickness of the film mask can be adjusted according to the usage scenario and requirements as needed.

[0083] Furthermore, the release film included in the third layer of the film mask is a polymer, and includes one or more of polyethylene terephthalate (PET), polyolefin film (PO), polyimide (PI), polyvinyl chloride (PVC), biaxially oriented polypropylene (BOPP), etc.

[0084] Furthermore, the thickness of the third layer is 1 - 100 μm, the preferred thickness is 5 - 40 μm, and the more preferred thickness is 10 - 25 μm.

[0085] In combination with the above description, for example, the thickness of the third layer is 1 μm, 5 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 85 μm, 90 μm, 95 μm, 100 μm or any range therebetween.

[0086] When using the film mask described above, it can be applied to the film formation process of a solar cell.

[0087] Furthermore, the film formation process includes a functional layer film formation process and / or a conductive layer film formation process. Only one or both of the manufacturing processes of the functional layer and the conductive layer can select and utilize the film mask. Here, the functional layer film formation includes dielectric film formation, and the conductive layer film formation includes transparent conductive layer film formation and / or metal conductive layer film formation.

[0088] The dielectric described above includes one or more of a passivation layer, an insulating layer, an antireflection layer, etc.

[0089] Specific scene example 1 The film mask is composed of a laminated polymer film and a viscous film.

[0090] The polymer film uses a 5-μm blue PET film material. The specific parameters are that the visible light transmittance is 90% or less, and the energy absorption coefficient at a 355-nm ultraviolet light wavelength is 50% or more. Figure 3 is a schematic diagram of the wavelength and absorption coefficient of the polymer film using the blue PET film material in Specific Scene Example 1 of this application. As shown in Figure 3, in the figure, the horizontal axis is the wavelength numerical range, the unit is nm, the vertical axis is the absorption coefficient, and the unit is %. 31 in the figure represents the absorption coefficient of the polymer film using the blue PET film material within different wavelength ranges. 32 in the figure represents the absorption coefficient of the polymer film using the transparent PET film material within different wavelength ranges. As shown by 33 in the figure, it can be seen that the energy absorption coefficient of the polymer film using the blue PET film material at a 355-nm ultraviolet light wavelength is 53%.

[0091] The viscous film is a silica gel adhesive with a thickness of 5 μm. The specific parameters are that the visible light transmittance is 90% or less, the energy absorption coefficient at a 355-nm ultraviolet light wavelength is 5% or more, and under the condition of 25 °C, the peel strength is 10 - 15 gf / cm.

[0092] Specific Scene Example 2 The film mask is composed of a laminated polymer film and a viscous film.

[0093] The polymer film uses a 10-μm yellow PET film material. The specific parameters are that the visible light transmittance is 40% or less, and the energy absorption coefficient at a 530-nm green light wavelength is 20% or more. Figure 4 is a schematic diagram of the wavelength and absorption coefficient of the polymer film using the yellow PET film material in Specific Scene Example 2 of this application. As shown in Figure 4, in the figure, the horizontal axis is the wavelength numerical range, the unit is nm, the vertical axis is the absorption coefficient, and the unit is %. 41 in the figure represents the absorption coefficient of the polymer film using the yellow PET film material within different wavelength ranges. As shown by 42 in the figure, it can be seen that the energy absorption coefficient of the polymer film using the yellow PET film material at a 530-nm green light wavelength is 23%.

[0094] The adhesive film is a silica gel adhesive with a thickness of 7 μm. The specific parameters are as follows: the visible light transmittance is 40% or less, the absorption coefficient of 530 nm green wavelength energy is 35% or more, and under the condition of 25 °C, the peel strength is 20 - 25 gf / cm.

[0095] Specific Scene Example 3 The film mask is composed of a laminated polymer film and an adhesive film.

[0096] The polymer film uses a 15-μm green PO film material. The specific parameters are as follows: the visible light transmittance is 80% or less, and the absorption coefficient of 1065 nm infrared wavelength energy is 20% or more. Figure 5 is a schematic diagram of the wavelength and absorption coefficient of the polymer film using the green PO film material in Specific Scene Example 3 of the present application. As shown in Figure 5, in the figure, the horizontal axis is the wavelength numerical range with the unit of nm, and the vertical axis is the absorption coefficient with the unit of %. 51 in the figure represents the absorption coefficient of the polymer film using the green PO film material within different wavelength ranges. As shown by 52 in the figure, it can be seen that the energy absorption coefficient of the polymer film using the green PO film material at the infrared light wavelength of 1065 nm is 20%.

[0097] The adhesive film is a silica gel adhesive with a thickness of 10 μm. The specific parameters are as follows: the visible light transmittance is 80% or less, the absorption coefficient of 1065 nm infrared wavelength energy is 25% or more, and under the condition of 20 °C, the peel strength is 10 - 15 gf / cm.

[0098] Specific Scene Example 4 The film mask is composed of a laminated polymer film and an adhesive film.

[0099] The polymer film uses a 5-μm brown PI film material. The specific parameters are as follows: the visible light transmittance is 80% or less, and the absorption coefficient of 355 nm ultraviolet wavelength energy is 20% or more.

[0100] The adhesive film is a silica gel adhesive with a thickness of 5 μm. The specific parameters are that the visible light transmittance is 80% or less, the 355 nm ultraviolet wavelength energy absorption coefficient is 20% or more, and under the condition of 20 °C, the peel strength is 15 - 20 gf / cm.

[0101] Specific scene example 5 The film mask is composed of a polymer film and an adhesive film laminated together.

[0102] The polymer film uses a 10 μm blue PVC film material. The specific parameters are that the visible light transmittance is 70% or less, and the 343 nm ultraviolet wavelength energy absorption coefficient is 40% or more.

[0103] The adhesive film is an acrylic adhesive with a thickness of 7 μm. The specific parameters are that the visible light transmittance is 80% or less, the 343 nm ultraviolet wavelength energy absorption coefficient is 30% or more, and under the condition of 20 °C, the peel strength is 20 - 25 gf / cm.

[0104] Specific scene example 6 The film mask is composed of a polymer film and an adhesive film laminated together.

[0105] The polymer film uses a 20 μm brown BOPP film material. The specific parameters are that the visible light transmittance is 80% or less, and the 1030 nm infrared wavelength energy absorption coefficient is 15% or more.

[0106] The adhesive film is a polyurethane adhesive with a thickness of 15 μm. The specific parameters are that the visible light transmittance is 90% or less, the 1030 nm infrared wavelength energy absorption coefficient is 20% or more, and under the condition of 20 °C, the peel strength is 25 - 30 gf / cm.

[0107] Specific scene example 7 The film mask is composed of a polymer film and an adhesive film laminated together.

[0108] The polymer film uses a 5-μm blue PET film material. The specific parameters are that the visible light transmittance is 90% or less, and the 355-nm ultraviolet light wavelength energy absorption coefficient is 20% or more.

[0109] The viscous film is a unidirectional temperature-sensitive adhesive with a thickness of 5 μm. The specific parameters are that the visible light transmittance is 73% or less, the 355-nm ultraviolet light wavelength energy absorption coefficient is 10% or more, the peel strength is 20-25 gf / cm under the condition of 15-25 °C, the peel strength is 20-30 gf / cm under the condition of 50-100 °C, and the peel strength is 5-7 gf / cm under the condition of 140 °C.

[0110] Specific scene example 8 The film mask is composed of a polymer film and a viscous film laminated together.

[0111] The polymer film uses an 8-μm red PO film material. The specific parameters are that the visible light transmittance is 43% or less, and the 545-nm green light wavelength energy absorption coefficient is 36% or more.

[0112] The viscous film is a unidirectional temperature-sensitive adhesive with a thickness of 7 μm. The specific parameters are that the visible light transmittance is 32% or less, the 545-nm green light wavelength energy absorption coefficient is 41% or more, the peel strength is 23-25 gf / cm under the condition of 20-30 °C, the peel strength is 17-24 gf / cm under the condition of 60-110 °C, and the peel strength is 5-6 gf / cm under the condition of 130 °C.

[0113] Specific scene example 9 The film mask is composed of a polymer film and a viscous film laminated together.

[0114] The polymer film uses a 6-μm blue PET film material. The specific parameters are that the visible light transmittance is 80% or less, and the 350-nm ultraviolet light wavelength energy absorption coefficient is 25% or more.

[0115] The pressure-sensitive film is a biaxial temperature-sensitive adhesive with a thickness of 6 μm. The specific parameters are as follows: the visible light transmittance is 61% or less, the 350 nm ultraviolet light wavelength energy absorption coefficient is 5% or more, the peel strength is 5-7 gf / cm under the condition of 50 °C, the peel strength is 15-21 gf / cm under the condition of 80-100 °C, and the peel strength is 26-30 gf / cm under the condition of 120-140 °C.

[0116] Specific scene example 10 The film mask is composed of a polymer film and a pressure-sensitive film laminated together.

[0117] The polymer film uses a 10 μm red BOPP film material. The specific parameters are as follows: the visible light transmittance is 75% or less, and the 520 nm green light wavelength energy absorption coefficient is 45% or more.

[0118] The pressure-sensitive film is a biaxial temperature-sensitive adhesive with a thickness of 8 μm. The specific parameters are as follows: the visible light transmittance is 49% or less, the 520 nm green light wavelength energy absorption coefficient is 12% or more, the peel strength is 6-10 gf / cm under the condition of 55 °C, the peel strength is 12-19 gf / cm under the condition of 70-90 °C, and the peel strength is 20-25 gf / cm under the condition of 100-130 °C.

[0119] Specific scene example 11 The film mask is composed of a polymer film, a pressure-sensitive film and a release film laminated together.

[0120] The polymer film uses an 8 μm blue PVC film material. The specific parameters are as follows: the visible light transmittance is 80% or less, and the 340 nm ultraviolet light wavelength energy absorption coefficient is 30% or more.

[0121] The pressure-sensitive film is a silica gel-based adhesive with a thickness of 9 μm. The specific parameters are as follows: the visible light transmittance is 8% or less, the 340 nm ultraviolet light wavelength energy absorption coefficient is 34% or more, and the peel strength is 16-18 gf / cm under the condition of 25 °C.

[0122] The release film is a transparent PET film with a thickness of 5 μm.

[0123] Specific scene example 12 The film mask is composed of a laminated polymer film, a viscous film and a release film.

[0124] The polymer film uses a 10-μm green PO film material. The specific parameters are that the visible light transmittance is 48% or less, and the absorption coefficient of 1040-nm infrared light wavelength energy is 39% or more.

[0125] The viscous film is a silica gel-based adhesive with a thickness of 8 μm. The specific parameters are that the visible light transmittance is 31% or less, the absorption coefficient of 1040-nm infrared light wavelength energy is 31% or more, and under the condition of 25 °C, the peel strength is 10-15 gf / cm.

[0126] The release film is a transparent PET film with a thickness of 5 μm.

[0127] The specific application example of the film mask is as follows. It is applied in the manufacturing field of solar cell modules, specifically in the manufacturing process of electrode gate lines.

[0128] Specific application example 1 Here, regarding the characteristics of the specifically adopted film mask, the film mask is composed of a laminated polymer film and a viscous film. The polymer film uses a 5-μm blue PET film, the visible light transmittance is 73% or less, and the absorption coefficient of 350-nm ultraviolet light wavelength energy is 47% or more. The viscous film is a 5-μm silica gel adhesive, the visible light transmittance is 54% or less, the absorption coefficient of 350-nm ultraviolet light wavelength energy is 24% or more, and under the condition of 25 °C, the peel strength is 10-15 gf / cm.

[0129] By adopting a polymer film and a viscous film with specially set optical properties, the energy absorption within the ultraviolet wavelength range of both is improved. When scribing a film mask using an ultraviolet laser to form patterning content, the power requirement of the ultraviolet laser is low, and costs can be saved.

[0130] Also, by adopting an appropriate numerical range for the peel strength range of the viscous film, the viscosity of the film mask meets the processing requirements, and the viscosity should not be too loose or too sticky. That is, during the process of manufacturing the electrode gate line, the film mask does not fall off, and the film is peeled off after manufacturing the electrode gate line without damaging the solar cell.

[0131] FIG. 6 is a schematic diagram of a method for manufacturing an electrode gate line in a solar cell of a specific application example 1 of the present application. As shown in FIG. 6, the specific method in this example includes the following steps S101 to S105.

[0132] S101, scribing the electrode gate line pattern of the film mask with a laser to form a patterned film mask.

[0133] First, in the film mask, the designed pattern is scribed by a laser etching process. The laser adopts an ultraviolet light source on the picosecond order, and the wavelength is 350 nm. The pattern width is preferably 1 μm - 500 μm, more preferably 1 μm - 20 μm, and the pattern line pitch is 50 μm - 5 mm, more preferably 500 μm - 2 mm. However, the pattern designed on the film mask is the electrode gate line pattern on the subsequent solar cell, and the selection of the pattern width and line pitch can be adjusted according to the usage scenario and requirements as needed.

[0134] S102, attaching the patterned film mask to the solar cell.

[0135] Next, attach the film mask with the electrode gate line pattern scribed thereon to the surface of the solar cell where the electrode gate line needs to be installed, that is, attach the exposed surface of the silica gel adhesive of the film mask to the solar cell.

[0136] S103. Perform a film forming process on the solar cell to which the patterned film mask is attached.

[0137] Next, perform a film forming process on the solar cell to which the patterned film mask is attached. Specifically, manufacture the metal electrode gate line by adopting the physical vapor deposition (PVD) method, or manufacture the electrode gate line on the solar cell by adopting the electroplating method. Here, both the PVD method and the electroplating method are well-known technologies and will not be specifically described herein.

[0138] S104. Peel off the patterned film mask on the solar cell after the film forming process.

[0139] Thereafter, peel off the patterned film mask on the solar cell after the film forming process. No electrode gate line is formed in the covered area on the solar cell, and an electrode gate line is formed in the uncovered area.

[0140] S105. Anneal the solar cell.

[0141] Finally, anneal the solar cell on which the patterned electrode gate line is formed to complete the manufacture of the electrode gate line.

[0142] Specific Application Example 2 Here, regarding the characteristics of the specifically adopted film mask, the film mask is composed of a laminated polymer film, a viscous film, and a release film. The polymer film uses a 10-μm red BOPP film, has a visible light transmittance of 48% or less, and a 530-nm green light wavelength energy absorption coefficient of 31% or more. The viscous film is a 3-μm-thick silica gel adhesive, has a visible light transmittance of 61% or less, a 530-nm green light wavelength energy absorption coefficient of 32% or more, and a peel strength of 16 - 21 gf / cm under the condition of 20°C. The release film is a 10-μm-thick transparent PET film.

[0143] By adopting a polymer film and a viscous film with specially set optical properties, the energy absorption within the green light wavelength range of both is improved. When scribing the film mask with a green light laser to form the patterning content, the power demand of the green light laser is small, and costs can be saved.

[0144] Also, by adopting an appropriate numerical range for the peel strength range of the viscous film, the viscosity of the film mask meets the processing requirements, and the viscosity should not be too loose or too sticky. That is, the film mask does not fall off during the process of manufacturing the electrode gate line, and the solar cell is not damaged during the process of peeling off the film after manufacturing the electrode gate line.

[0145] Figure 7 is a schematic diagram of a method for manufacturing an electrode gate line in a solar cell of a specific application example 2 of the present application. As shown in Figure 7, the specific method in this example includes the following steps S201 to S205.

[0146] S201, scribe the electrode gate line pattern of the film mask with a laser to form a patterned film mask.

[0147] First, in the film mask, the designed pattern is scribed by a laser etching process. The laser uses a green light source on the picosecond order with a wavelength of 530 nm. The pattern width is preferably 1 μm - 500 μm, more preferably 1 μm - 20 μm, and the pattern line pitch is 50 μm - 5 mm, more preferably 500 μm - 2 mm. However, the pattern designed on the film mask is the electrode gate line pattern on the subsequent solar cell, and the selection of the pattern width and line pitch can be adjusted according to the usage scenario and requirements.

[0148] S202. Attach the patterned film mask to the solar cell.

[0149] Next, after removing the release film of the film mask with the electrode gate line pattern scribed, attach it to the surface of the solar cell where the electrode gate line needs to be installed, that is, attach the exposed surface of the silica gel adhesive of the film mask to the solar cell.

[0150] S203. Perform a film-forming process on the solar cell with the patterned film mask attached.

[0151] Next, perform a film-forming process on the solar cell with the patterned film mask attached. Specifically, manufacture the metal electrode gate line by adopting the physical vapor deposition (PVD) method, or manufacture the electrode gate line on the solar cell by adopting the electroplating method. Here, both the PVD method and the electroplating method are well-known techniques and will not be specifically described here.

[0152] S204. Peel off the patterned film mask on the solar cell after the film-forming process.

[0153] After that, peel off the patterned film mask on the solar cell after the film-forming process. No electrode gate line is formed in the covered area on the solar cell, and an electrode gate line is formed in the uncovered area.

[0154] S205. Anneal the solar cell.

[0155] Finally, anneal the solar cell with the patterned electrode gate line formed thereon to complete the manufacture of the electrode gate line.

[0156] Specific Application Example 3 Here, regarding the characteristics of the specifically adopted film mask, the film mask is composed of a laminated polymer film and a viscous film. The polymer film uses a 15-μm blue PO film, has a visible light transmittance of 62% or less, and a 355-nm ultraviolet light wavelength energy absorption coefficient of 58% or more. The viscous film is a unidirectional temperature-sensitive adhesive with a thickness of 10 μm, has a visible light transmittance of 75% or less, a 355-nm ultraviolet light wavelength energy absorption coefficient of 24% or more, a peel strength of 35 gf / cm under the condition of 20°C, a peel strength of 20 - 30 gf / cm under the condition of 50 - 85°C, and a peel strength of 5 gf / cm under the condition of 140°C.

[0157] By adopting a polymer film and a viscous film with specially set optical properties, the energy absorption within the ultraviolet light wavelength band of both is improved. When scribing the film mask with an ultraviolet laser to form the patterning content, the power requirement of the ultraviolet laser is small, and costs can be saved.

[0158] Also, by adopting an appropriate numerical range for the peel strength range of the viscous film, the viscosity of the film mask meets the processing requirements, and the viscosity should not be too loose or too sticky. That is, the film mask does not fall off during the process of manufacturing the electrode gate line, and the solar cell is not damaged during the process of peeling off the film after manufacturing the electrode gate line.

[0159] S301. Scribe the electrode gate line pattern of the film mask with a laser to form a patterned film mask.

[0160] FIG. 8 is a schematic diagram of a method for manufacturing an electrode gate line in a solar cell according to Specific Application Example 3 of the present application. As shown in FIG. 8, the specific method in this example includes the following steps S301 to S305.

[0161] First, in the film mask, the designed pattern is scribed by a laser etching process. The laser employs an ultraviolet light source on the picosecond order with a wavelength of 350 nm. The pattern width is preferably 1 μm - 500 μm, more preferably 1 μm - 20 μm, and the pattern line pitch is 50 μm - 5 mm, more preferably 500 μm - 2 mm. However, the pattern designed on the film mask is the electrode gate line pattern on the subsequent solar cell, and the selection of the pattern width and line pitch can be adjusted according to the usage scenario and requirements.

[0162] S302. Attach the patterned film mask to the solar cell.

[0163] Next, attach the film mask scribed with the electrode gate line pattern to the surface of the solar cell where the electrode gate line needs to be installed, that is, attach the exposed surface of the one-way temperature-sensitive adhesive of the film mask to the solar cell.

[0164] S303. Perform a film-forming process on the solar cell with the patterned film mask attached.

[0165] Next, perform a film-forming process on the solar cell with the patterned film mask attached. Specifically, a metal electrode gate line is manufactured by adopting a physical vapor deposition (PVD) method, or an electrode gate line is manufactured on the solar cell by adopting an electroplating method. Here, both the PVD method and the electroplating method are well-known technologies and will not be specifically described here.

[0166] S304. Peel off the patterned film mask on the solar cell after the film-forming process by a heating method.

[0167] Thereafter, by heating the solar cell after the film formation treatment, for example, continuously heating at 150°C for 5 minutes using a thermal filament or continuously heating at 150°C for 10 minutes using an infrared lamp, since the peel strength of the unidirectional thermosensitive adhesive under the condition of 150°C is weaker than the peel strength at room temperature, the patterned film mask on the solar cell after the film formation treatment can be easily peeled off. Finally, no electrode gate line is formed in the coated area on the solar cell, and electrode gate lines are formed in the uncoated area.

[0168] S305. Anneal the solar cell.

[0169] Finally, anneal the solar cell on which the patterned electrode gate lines are formed to complete the manufacture of the electrode gate lines.

[0170] Specific application example 4 Here, regarding the characteristics of the specifically adopted film mask, the film mask is composed of a laminated polymer film and a viscous film. The polymer film uses a 20-μm green PVC film, has a visible light transmittance of 58% or less, and a 547-nm green light wavelength energy absorption coefficient of 39% or more. The viscous film is a 15-μm thick bidirectional thermosensitive adhesive, has a visible light transmittance of 41% or less, a 547-nm green light wavelength energy absorption coefficient of 65% or more, a peel strength of 5 gf / cm under the condition of 25°C, a peel strength of 17-22 gf / cm under the condition of 50-80°C, and a peel strength of 27-30 gf / cm under the condition of 120-140°C.

[0171] By adopting a polymer film and a viscous film with specially set optical properties, the energy absorption within the green light wavelength range of both is improved. When scribing the film mask with a green light laser to form the patterning content, the power demand of the green light laser is small, and costs can be saved.

[0172] In addition, by adopting an appropriate numerical range for the peel strength range of the adhesive film, the viscosity of the film mask can meet the processing requirements, and the viscosity should not be too loose or too sticky. That is, the film mask does not fall off during the process of manufacturing the electrode gate line, and the solar cell is not damaged even during the process of peeling off the film after manufacturing the electrode gate line.

[0173] FIG. 9 is a schematic diagram of a method for manufacturing an electrode gate line in a solar cell according to a specific application example 4 of the present application. As shown in FIG. 9, the specific method in this embodiment includes the following steps S401 to S406.

[0174] S401: Scribe the electrode gate line pattern of the film mask with a laser to form a patterned film mask.

[0175] First, in the film mask, the designed pattern is scribed by a laser etching process. The laser adopts a green light source in the picosecond order, and the wavelength is 547 nm. The pattern width is preferably 1 μm - 500 μm, more preferably 1 μm - 20 μm, and the pattern line pitch is 50 μm - 5 mm, more preferably 500 μm - 2 mm. However, the pattern designed on the film mask is the electrode gate line pattern on the subsequent solar cell, and the selection of the pattern width and line pitch can be adjusted according to the usage scenario and requirements as needed.

[0176] S402: Attach the patterned film mask to the solar cell.

[0177] Next, attach the film mask with the electrode gate line pattern scribed to the surface of the solar cell where the electrode gate line needs to be installed, that is, attach the exposed surface of the bidirectional temperature-sensitive adhesive of the film mask to the solar cell.

[0178] S403: Heat-treat the solar cell with the patterned film mask attached.

[0179] The solar cell with a patterned film mask attached is heated by a heating method. Since the peel strength of the bidirectional thermosensitive adhesive increases with the increase in temperature, the heating method makes the adhesion between the patterned film mask and the solar cell stronger, facilitating the processing and treatment in subsequent processes. The heating method can be realized, for example, by continuously heating at 130 °C for 2 minutes using a thermal filament or continuously heating at 70 °C for 5 minutes using an infrared lamp.

[0180] S404. Perform a film-forming process on the solar cell with a patterned film mask attached.

[0181] Next, perform a film-forming process on the solar cell with a patterned film mask attached. Specifically, a metal electrode gate line is manufactured by adopting a physical vapor deposition (PVD) method, or an electrode gate line is manufactured on the solar cell by adopting an electroplating method. Here, both the PVD method and the electroplating method are well-known technologies and will not be specifically described here.

[0182] S405. After cooling the solar cell after the film-forming process, peel off the patterned film mask.

[0183] After that, since the bidirectional thermosensitive adhesive has the reversibility that the peel strength increases with the increase in temperature and decreases with the decrease in temperature, by lowering the temperature of the solar cell after the film-forming process, that is, after the cooling process, the patterned film mask on the solar cell after the film-forming process can be easily peeled off. Finally, no electrode gate line is formed in the covered area on the solar cell, and an electrode gate line is formed in the uncovered area.

[0184] S406. Anneal the solar cell.

[0185] Finally, anneal the solar cell with the patterned electrode gate line formed to complete the manufacture of the electrode gate line.

[0186] In the description of the above embodiments, specific features, structures, materials, or characteristics may be combined in a suitable manner in any one or more of the embodiments or examples.

[0187] The above description is only a specific embodiment of the present application, but the protection scope of the present application is not limited thereto. Within the technical scope disclosed by the present application, those skilled in the art can easily conceive of changes and substitutions, and all of these changes and substitutions should be included within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the scope of the claims.

[0188] Finally, it should be noted that the above embodiments are only for explaining the technical solutions of the present application and not for limiting them. Although the present application has been described in detail with reference to the above embodiments, those skilled in the art can modify the technical solutions described in the above embodiments or equivalently replace some of the technical features. These modifications and substitutions do not deviate from the spirit and scope of the technical solutions of the corresponding technical solutions of the embodiments of the present application.

Claims

1. A film mask used in a film formation process of a solar cell, wherein the film mask includes a first layer and a second layer, the first layer and the second layer are laminated and arranged, and the second layer is composed of a viscous film. The first layer has an absorption rate of 20% or more when the thickness is 200 μm or less under irradiation of an ultraviolet light source, where the wavelength of the ultraviolet light source is 355 ± 15 nm, or the first layer has an absorption rate of 20% or more when the thickness is 200 μm or less under irradiation of a green light source, where the wavelength of the green light source is 530 ± 15 nm, or the first layer has an absorption rate of 20% or more when the thickness is 200 μm or less under irradiation of an infrared light source, where the wavelength of the infrared light source is 1045 ± 20 nm. The film mask in which the visible light transmittance of the first layer is 90% or less.

2. The first layer has an absorption rate of 50% or more when the thickness is 200 μm or less under irradiation of an ultraviolet light source. Or the first layer has an absorption rate of 50% or more when the thickness is 200 μm or less under irradiation of a green light source. Or the first layer has an absorption rate of 50% or more when the thickness is 200 μm or less under irradiation of an infrared light source. The film mask according to Claim 1.

3. The second layer has an absorption rate of 5% or more when the thickness is 200 μm or less under irradiation of an ultraviolet light source, where the wavelength of the ultraviolet light source is 355 ± 15 nm. Or the second layer has an absorption rate of 5% or more when the thickness is 200 μm or less under irradiation of a green light source, where the wavelength of the green light source is 530 ± 15 nm. Or the second layer has an absorption rate of 5% or more when the thickness is 200 μm or less under irradiation of an infrared light source, where the wavelength of the infrared light source is 1045 ± 20 nm. The film mask according to Claim 1.

4. The second layer has an absorption rate of 50% or more when the thickness is 200 μm or less under irradiation of an ultraviolet light source. Or the second layer has an absorption rate of 50% or more when the thickness is 200 μm or less under irradiation of a green light source. Or the second layer has an absorption rate of 50% or more when the thickness is 200 μm or less under irradiation of an infrared light source. The film mask according to Claim 1.

5. The peel strength of the second layer at a first temperature is 1 - 50 gf / cm. The film mask according to claim 1, wherein the first temperature is 15 - 30°C.

6. The material of the adhesive film in the second layer includes a unidirectional thermosensitive adhesive that exhibits irreversibility under different temperature conditions of viscosity. The peel strength of the unidirectional thermosensitive adhesive decreases as the temperature rises. The film mask according to claim 1, wherein the peel strength of the unidirectional thermosensitive adhesive is 5 - 30 gf / cm, and the temperature is 50 - 140°C.

7. The material of the adhesive film in the second layer includes a heat-degradable viscose that exhibits irreversibility under conditions where the viscosity is at or above a second temperature. The heat-degradable viscose has a peel strength at or above the second temperature that is smaller than the peel strength below the second temperature. The film mask according to claim 1, wherein the second temperature is 70 - 150°C.

8. The material of the adhesive film in the second layer includes a bidirectional thermosensitive adhesive that exhibits reversibility under different temperature conditions of viscosity. The peel strength of the bidirectional thermosensitive adhesive increases as the temperature rises. The film mask according to claim 1, wherein the peel strength of the bidirectional thermosensitive adhesive is 5 - 30 gf / cm, and the temperature is 50 - 140°C.

9. A film-forming process for a solar cell using the film mask according to any one of claims 1 - 8.

10. Including a functional layer film-forming process and / or a conductive layer film-forming process. The film-forming process according to claim 9, wherein the functional layer film-forming includes dielectric film-forming, and the conductive layer film-forming includes transparent conductive layer film-forming and / or metal conductive layer film-forming.

Images