Method for fabricating an embedded package heat dissipation structure

Abstract

To provide an embedded and packaged heat dissipation structure, a manufacture method therefor, and a semiconductor.SOLUTION: A method contains: a step S1 of forming a first semi-finished board; a step S2 of forming a heat dissipation plate adhered to a non-pin surface of an embedded device on the basis of a first metal layer; a step S3 of manufacturing a heat dissipation copper column onto the heat dissipation plate; a step S4 of providing a dielectric layer covering the heat dissipation copper column; a step S5 of crimping a second metal layer onto the dielectric layer; a step S6 of partially etching the second metal layer and the dielectric layer, and forming a micro channel; a step S7 of manufacturing a thin-film metal layer, forming a barrier layer having an integration structure into an inner wall of the micro channel, and obtaining a second semi-finished board; a step S8 of manufacturing a first coated layer; and a step S9 of crimping the first coated layer to the second semi-finished board, tightly connecting the first coated layer with the barrier layer, and obtaining an embedded and packaged heat dissipation structure.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] This application relates to the technical field of semiconductor manufacturing, and particularly to an embedded package heat dissipation structure Manufacturing method thereof.

Background Art

[0002] In the prior art, in the conventional embedded device packaging method, in order to solve the problem of heat dissipation of the entire device, it is common to provide microchannels and heat-dissipating metal on the back of the embedded device. However, in the method devised in this way, since the microchannels are formed by directly etching the dielectric layer, in subsequent processes, the dielectric layer often partially melts due to high temperature, and the melted dielectric layer penetrates into the microchannels, deteriorating the heat dissipation effect and affecting the service life of the device. Therefore, a new manufacturing method for the embedded package heat dissipation structure is required.

Summary of the Invention

Problems to be Solved by the Invention

[0003] An object of this application is to solve at least to some extent one of the technical problems existing in the prior art.

[0004] For this reason, one object of the embodiments of this application is to provide an embedded package heat dissipation structure and its manufacturing method, and a semiconductor, and according to the manufacturing method, the service life of the device can be extended.

Means for Solving the Problems

[0005] In order to achieve the above technical object, the technical solutions used in the embodiments of this application include the following. Forming a first semi-finished board including an embedded device and a first metal layer, wherein the first metal layer is provided in close contact with the non-pin surface of the embedded device A step of forming a heat sink based on the first metal layer, wherein the heat sink is in close contact with the non-pin surface of the embedded device; A step of fabricating heat dissipation copper pillars on the heat sink; A step of providing a dielectric layer covering the heat dissipation copper pillars; A step of pressing a second metal layer onto the dielectric layer; A step of partially etching the second metal layer and the dielectric layer to form a microchannel, wherein the heat dissipation copper pillars and the heat sink are provided inside the microchannel, and both the microchannel outlet and the microchannel inlet are provided on the side surface of the first semi-finished board perpendicular to the direction of the first semi-finished board; A step of fabricating a thin metal layer to form a barrier layer with an integral structure on the inner wall of the microchannel, thereby obtaining a second semi-finished board; A step of fabricating a first coating layer; A step of pressing the first coating layer onto the second semi-finished board to hermetically connect the first coating layer and the barrier layer, thereby obtaining an embedded package heat dissipation structure. A method for fabricating an embedded package heat dissipation structure includes the above steps.

[0006] Also, according to the method for fabricating an embedded package heat dissipation structure in the above embodiment of the present invention, the following additional technical features may be included.

[0007] Furthermore, in the embodiment of the present application, the step of forming a heat sink based on the first metal layer specifically includes: A step of attaching a photoresist film to cover the first metal layer; A step of exposing the photoresist film to form a heat sink pattern; A step of etching the photoresist film and the heat sink pattern to form a heat sink. The above steps are included.

[0008] Furthermore, in the embodiment of the present application, a phase change material is further provided inside the microchannel to cover the heat dissipation copper pillars.

[0009] Furthermore, in the embodiment of the present application, the step of forming the microchannel by partially etching the second metal layer and the dielectric layer specifically includes: forming a window on the second metal layer by performing a process of attaching a photoresist film, an exposure process, and an etching process in this order, wherein a projection of the window in a direction perpendicular to the semi-finished product is the same as a projection of the microchannel in a direction perpendicular to the semi-finished product; etching the dielectric layer to expose the heat sink and the heat dissipation copper pillar to form a microchannel.

[0010] Furthermore, in the embodiment of the present application, the first coating layer includes an insulating layer, a metal layer, and a welding layer. The welding layer is hermetically connected to the barrier layer, and the metal layer is provided between the insulating layer and the welding layer. The step of fabricating the first coating layer specifically includes: adhering a first photoresist material onto the insulating layer; performing an exposure, development, etching, and ashing process on the first photoresist material to obtain a metal layer; adhering a second photoresist material onto the metal layer; performing an exposure, development, tin plating, and ashing process on the second photoresist material to obtain a welding layer.

[0011] In another aspect, the embodiment of the present application also provides an embedded package heat dissipation structure obtained by the method for manufacturing an embedded package heat dissipation structure according to any one of the above embodiments, wherein the embedded package heat dissipation structure An embedded device, a heat sink, a heat dissipation copper pillar, a microchannel, a barrier layer, and a first coating layer, wherein the heat sink and the heat dissipation copper pillar are provided inside the microchannel, the barrier layer is provided on the inner wall of the microchannel, the non-pin surface of the embedded device is in close contact with the heat sink, the heat dissipation copper pillar is connected to the heat sink, and the first coating layer seals the microchannel in a direction perpendicular to the heat dissipation structure.

[0012] Furthermore, in an embodiment of the present application, the number of the embedded devices is one or more.

[0013] Furthermore, in an embodiment of the present application, the first coating layer includes an insulating layer, a metal layer, and a welding layer. The welding layer is hermetically connected to the barrier layer, and the metal layer is provided between the insulating layer and the welding layer.

[0014] Furthermore, in an embodiment of the present application, the number of the heat dissipation copper pillars is one or more.

[0015] In another aspect, the present application also provides a semiconductor including the embedded package heat dissipation structure according to any one of the above embodiments.

Advantages of the Invention

[0016] The advantages and beneficial effects of the present application are partially shown in the following specification, partially will become apparent from the following specification, or can be understood through the implementation of the present application.

[0017] According to the present application, a barrier layer is provided on the inner wall of the microchannel, and by hermetically connecting the coating layer and the barrier layer, the penetration of the melted dielectric layer into the microchannel can be avoided, the heat dissipation effect of the device can be enhanced, and the service life of the device can be extended.

Brief Description of the Drawings

[0018]

Figure 1

Figure 2

Figure 3

Figure 4

Embodiments for Carrying Out the Invention

[0019] Hereinafter, with reference to the drawings, the manufacturing method of the embedded package heat dissipation structure, the embedded package heat dissipation structure, and the principles and processes of semiconductors in the embodiments of the present invention will be described in detail.

[0020] Referring to FIG. 1, the manufacturing method of the embedded package heat dissipation structure of the present invention includes the following steps S1 to S9.

[0021] S1: Form a first semi-finished board including an embedded device and a first metal layer, wherein the first metal layer is provided in close contact with the non-pin surface of the embedded device.

[0022] In this step, the first semi-finished board may include an embedded device and a first metal layer, and among them, the non-pin surface of the embedded device may be in close contact with the first metal layer. The first metal layer in close contact with the embedded device contributes to the heat conduction of the embedded device and may be made of metal titanium or other metals with high thermal conductivity and thermal stability. The embedded device may be an active device or a passive device. The first semi-finished board may further include a wiring layer. The wiring layer may be electrically connected to the embedded device, thereby realizing the function of the embedded device. Also, a dielectric layer may be provided between the first metal layer and the wiring layer. The dielectric layer can fix the embedded device and the first metal layer and electrically isolate the first metal layer and the wiring layer.

[0023] S2: Based on the first metal layer, form a heat sink.

[0024] In this step, the first metal layer may be etched into a heat sink by conventional processes such as exposure, development, and etching. Since an etching process is used to form the heat sink, in order to enhance the heat dissipation effect of the embedded device, the heat sink obtained by partially etching the metal layer must be in close contact with the non-pin surface of the embedded device. If the thickness of the first metal layer is not sufficient to meet the requirements of the etching process, the metal layer may be thickened by a common process such as electroplating. Or, if the thickness of the formed heat sink is small and insufficient to have heat dissipation performance, the heat sink may be thickened by an electroplating process to meet specific heat dissipation requirements. Further, in some embodiments, when it is necessary to fabricate a wiring layer on the first metal layer, the wiring layer may be fabricated based on the first metal layer while fabricating the heat sink by a conventional process.

[0025] S3: Fabricate heat dissipation copper pillars on the heat sink.

[0026] In this step, heat dissipation copper pillars may be fabricated on the heat sink. The heat dissipation copper pillars may be fabricated by conventional processes such as attaching a photoresist film, exposing the pattern, and etching the pattern. The heat dissipation copper pillars may be connected to the heat sink. The material of the heat dissipation copper pillars may be the same as that of the heat sink, or a material with higher heat conduction ability may be used for the heat sink.

[0027] S4: Provide a dielectric layer covering the heat dissipation copper pillars.

[0028] In this step, a dielectric layer may be provided. The dielectric layer may cover the heat dissipation copper pillars and a resin film may be used. The resin film may be obtained by pressing a thermosetting resin or a thermoplastic resin, or any one of these materials may be used. The dielectric layer must completely cover the heat dissipation copper pillars and provide support for subsequent processes.

[0029] S5: Press-bond a second metal layer onto the dielectric layer.

[0030] In this step, the second metal layer may contain a metal material different from copper, protect the dielectric layer as a protective layer, and avoid the influence on subsequent processing caused by excessive processing of the dielectric layer in subsequent processes.

[0031] S6: Partially etch the second metal layer and the dielectric layer to form a microchannel.

[0032] In this step, the second metal layer may be partially etched by conventional processes such as exposure and development etching, and the dielectric layer may be partially etched by a Plasma method to form a microchannel. Here, the heat-dissipating copper pillar and the heat-dissipating plate obtained by the above steps may be provided inside the microchannel. Either the outlet or the inlet of the microchannel is provided on the side surface of the first semi-finished board perpendicular to the direction of the first semi-finished board.

[0033] S7: Fabricate a thin metal layer to form a barrier layer with an integral structure on the inner wall of the microchannel, and obtain a second semi-finished board.

[0034] In this step, a thin metal layer may be fabricated by a single-sided Sputter sputtering process, and a barrier layer with an integral structure may be formed inside the channel. The material of the barrier layer may be a metal material. The barrier layer can avoid the dielectric material melting due to high temperature and penetrating into the microchannel in the subsequent press-bonding process, which reduces the heat dissipation function of the microchannel. Also, since a metal is used for the barrier layer and the metal has excellent thermal conductivity, the heat dissipation function of the microchannel can be further improved.

[0035] S8: Fabricate a first coating layer.

[0036] In this step, the first coating layer may be fabricated by multiple chemical etching processes. The first coating layer may include a welding layer, a metal layer, and an insulating layer that seal the barrier layer. The welding layer of the first coating layer may seal the microchannel together with the barrier layer on the inner wall of the microchannel, thereby avoiding the dielectric layer melting and penetrating into the microchannel during the crimping process, which would have an adverse effect on the heat dissipation effect.

[0037] S9: Crimp the first coating layer and the second semi-finished board to hermetically connect the first coating layer and the barrier layer, obtaining an embedded package heat dissipation structure.

[0038] In this step, the first coating layer and the second semi-finished board may be crimped by welding. Welding enables the first coating layer and the barrier layer to be sealed, and welding has excellent stability, avoiding the sealing performance between the first coating layer and the barrier layer being impaired in subsequent processes.

[0039] Furthermore, in some embodiments of the present application, the step of forming the heat sink based on the first metal layer may specifically include the following steps S21 to S23.

[0040] S21: Affix a photoresist film to cover the first metal layer.

[0041] S22: Expose the photoresist film to form a heat sink pattern.

[0042] S23: Etch the photoresist film and the heat sink pattern to form a heat sink.

[0043] In this embodiment, the first metal layer may be covered by affixing a photoresist film, and then the photoresist film is exposed to form a pattern of the heat sink. The photoresist film is etched, and the first metal layer is partially etched to form a heat sink. The heat sink must be in complete or partial contact with the embedded device.

[0044] Furthermore, in some embodiments of the present application, the step of forming the microchannel by partially etching the second metal layer and the dielectric layer may specifically include the following steps S31 and S32.

[0045] S31: By performing a process of attaching a photoresist film, an exposure process, and an etching process in this order, a window is formed on the second metal layer, and a projection of the window in a direction perpendicular to the semi-finished product is the same as a projection of the microchannel in a direction perpendicular to the semi-finished product.

[0046] S32: Etch the dielectric layer to expose the heat sink and the heat dissipation copper pillar, and form a microchannel.

[0047] In this embodiment, first, the second metal is partially etched by a conventional process of attaching a photoresist film, an exposure process, and an etching process to form a window. Next, through the window, the dielectric layer is etched by a Plasma process to expose the heat sink and the heat dissipation copper pillar, and a microchannel is formed.

[0048] Furthermore, in some embodiments of the present application, the first coating layer includes an insulating layer, a metal layer, and a welding layer. The welding layer is hermetically connected to the barrier layer, and the metal layer is provided between the insulating layer and the welding layer. The step of fabricating the first coating layer specifically includes the following steps S41 to S44.

[0049] S41: Adhere a first photoresist material onto the insulating layer.

[0050] S42: Perform an exposure, development, etching, and ashing process on the first photoresist material to obtain a metal layer.

[0051] S43: Adhere a second photoresist material onto the metal layer.

[0052] S44: Perform exposure, development, tin plating, and ashing processes on the second photoresist material to obtain a welding layer.

[0053] In this step, the first coating layer may include an insulating layer, a metal layer, and a welding layer. The welding layer may be hermetically connected to the barrier layer. In this step, a metal layer may be obtained on the insulating layer by conventional exposure, development, etching, and ashing processes. After obtaining the metal layer, a welding layer may be obtained on the metal layer by conventional exposure, development, tin plating, and ashing processes. Tin may be used as the welding material for the welding layer.

[0054] Furthermore, in some embodiments of the present application, the method for manufacturing the embedded package heat dissipation structure may further include a step of providing a phase change material. The phase change material may be provided inside the microchannel. The phase change material may surround all the heat dissipation copper pillars at the same height as the height of the heat dissipation copper pillars, or may completely cover all the heat dissipation copper pillars. The phase change material promotes the heat dissipation of the device while avoiding covering the heat dissipation copper pillars inside the microchannel with a dielectric layer melted by the phase change material, further improving the heat dissipation efficiency.

[0055] Furthermore, referring to FIG. 2 and corresponding to the method of FIG. 1, in an embodiment of the present application, an embedded package heat dissipation structure is further provided. This embedded package heat dissipation structure is obtained by the manufacturing method of the embedded package heat dissipation structure described in any of the above embodiments, and may include an embedded device 101, a heat dissipation plate 102, a heat dissipation copper pillar 103, a microchannel 104, a barrier layer 105, and a first coating layer 106. The heat dissipation plate 102 and the heat dissipation copper pillar 103 are provided inside the microchannel 104. The barrier layer 105 is provided on the inner wall of the microchannel 104. The barrier layer 105 can prevent the dielectric layer from melting and penetrating into the microchannel 104 by subsequent processes by blocking the dielectric layer from the inside of the microchannel 104. The non-pin surface of the embedded device 101 may be in close contact with the heat dissipation plate 102. The heat dissipation copper pillar 103 may be connected to the heat dissipation plate 102. The first coating layer 106 may seal the microchannel 104 in a direction perpendicular to the heat dissipation structure and a direction parallel to the heat dissipation structure.

[0056] Furthermore, in some embodiments of the present application, the number of embedded devices is one or more, and the number of embedded devices is different for each embedded package heat dissipation structure, but the specific number may be adjusted according to actual needs.

[0057] Furthermore, in some embodiments of the present application, the number of heat dissipation copper pillars is one or more. The more the number of heat dissipation copper pillars, the higher the heat dissipation efficiency. However, considering the manufacturing difficulty and manufacturing cost, the specific number may be adjusted according to actual needs.

[0058] Furthermore, in some embodiments of the present application, the first coating layer includes an insulating layer, a metal layer, and a welding layer. The welding layer is hermetically connected to the barrier layer, and the metal layer is provided between the insulating layer and the welding layer.

[0059] All the content in the embodiments of the above method is applicable to the embodiments of the embedded package heat dissipation structure. The functions specifically realized by the embodiments of the embedded package heat dissipation structure are the same as those of the embodiments of the above method, and the beneficial effects to be achieved are also the same as those achieved by the embodiments of the above method.

[0060] Corresponding to the embedded package heat dissipation structure in FIG. 2, an embodiment of the present application also provides a semiconductor that may include the embedded package heat dissipation structure described in any of the above embodiments.

[0061] Note that all the content in the embodiments of the above method is applicable to the embodiments of the present semiconductor. The functions specifically realized by the embodiments of the present semiconductor are the same as those of the embodiments of the above method, and the beneficial effects to be achieved are also the same as those achieved by the embodiments of the above method.

[0062] Hereinafter, with reference to specific embodiments, a method for manufacturing the embedded package heat dissipation structure of the present application will be described. Embodiment 1

[0063] In this embodiment, there are 4 embedded devices, 15 conductive copper pillars, the first metal layer is made of copper material, and the second metal layer is made of titanium material.

[0064] Referring to FIGS. 3a - h, Step 1: Fabricate a semi - finished board 201 according to the prior art. The semi - finished board 201 includes 4 embedded devices 202, a copper layer 203, and a wiring layer 204 connected to the embedded devices 202. The copper layer 203 is provided in close contact with the non - pin surface of the embedded devices 202.

[0065] Step 2: Based on the copper layer 203, form a heat sink 205 by a general manufacturing process. The heat sink 205 is in close contact with the non - pin surface of the embedded devices 202.

[0066] Step 3: By means of a process of attaching a general photoresist film or an exposure development etching process, fifteen heat dissipation copper posts 206 are fabricated on the heat sink 205.

[0067] Step 4: Cover the heat sink 205 and the heat dissipation copper posts 206 with a dielectric layer 207, and then, a titanium layer 208 is provided by crimping.

[0068] Step 5: The titanium layer 208 and the dielectric layer 207 are partially removed by etching to form a microchannel 209. The fifteen heat dissipation copper posts 206 and the heat sink 205 are provided inside the microchannel 209, and both the outlet and the inlet of the microchannel 209 are provided on the side surface of the semi-finished board 201 perpendicular to the direction of the semi-finished board 201.

[0069] Step 6: Remove the remaining part of the titanium layer 208 according to the prior art, fabricate a thin metal layer by means of a single-sided Sputter sputtering process, form a barrier layer 210 with an integral structure inside the channel, and form a second semi-finished board 215.

[0070] Step 7: Fabricate a first coating layer 211 including an insulating layer 212, a metal layer 213, and a welding layer 214 which is a tin material layer.

[0071] Step 8: Crimp the first coating layer 211 and the second semi-finished board 215, connect the first coating layer 211 and the barrier layer 210 in a sealed manner, and connect the welding layer 214 and the barrier layer 210 in a sealed manner by welding to obtain an embedded type package heat dissipation structure. Embodiment 2

[0072] In this embodiment, there are four embedded devices, fifteen conductive copper posts, the first metal layer is made of copper material, and the second metal layer is made of titanium material.

[0073] Referring to FIGS. 4a - 4i, Step 1: A semi - finished board 301 is fabricated according to the prior art. The semi - finished board 301 includes four embedded devices 302, a copper layer 303, and a wiring layer 304 connected to the embedded devices 302. The copper layer 303 is provided in close contact with the non - pin surface of the embedded devices 302.

[0074] Step 2: Based on the copper layer 303, a heat sink 305 is formed by a general fabrication process. The heat sink 305 is in close contact with the non - pin surface of the embedded devices 302.

[0075] Step 3: Fifteen heat - dissipating copper pillars 306 are fabricated on the heat sink 305 by a process of attaching a general photoresist film and an exposure - development - etching process.

[0076] Step 4: A dielectric layer 307 is covered on the heat sink 305 and the heat - dissipating copper pillars 306, and then a titanium layer 308 is provided by pressure bonding.

[0077] Step 5: The titanium layer 308 and the dielectric layer 307 are partially removed by etching to form a micro - channel 309. The fifteen heat - dissipating copper pillars 306 and the heat sink 305 are provided inside the micro - channel 309. Both the outlet and the inlet of the micro - channel 309 are provided on the side surface of the semi - finished board 301 perpendicular to the direction of the semi - finished board 301.

[0078] Step 6: The remaining part of the titanium layer 308 is removed according to the prior art, and a thin - film metal layer is fabricated by a single - side Sputter sputtering process to form a barrier layer 310 with an integral structure inside the channel, and a second semi - finished board 315 is formed.

[0079] Step 7: A phase - change material 316 is provided in the micro - channel 309. The phase - change material may be provided inside the micro - channel or may surround all the heat - dissipating copper pillars.

[0080] Step 8: Produce a first coating layer 311 including an insulating layer 312, a metal layer 313, and a welding layer 314 which is a tin material layer.

[0081] Step 9: Press-bond the first coating layer 311 and the second semi-finished board 315 to hermetically connect the first coating layer 311 and the barrier layer 310, and hermetically connect the welding layer 314 and the barrier layer 310 by welding to obtain an embedded package heat dissipation structure.

[0082] In some alternative embodiments, the functions / operations described in the block diagrams may not be in the order described in the operation diagrams. For example, depending on the related functions / operations, two consecutively shown blocks may be executed substantially simultaneously, or may be executed in the reverse order in some cases. Further, the embodiments presented and described in the flowcharts of the present application are provided exemplarily for the purpose of providing a more comprehensive technical understanding. The disclosed method is not limited to the operations and logical flows presented herein. Alternative embodiments are conceivable in which the order of various operations is changed and sub-operations described as part of larger operations are executed independently.

[0083] In the foregoing description of this specification, descriptions referring to terms such as "one embodiment / example", "another embodiment / example", or "some embodiments / examples" mean that the specific features, structures, materials, or characteristics described with reference to the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Further, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0084] Although the embodiments of the present application are shown and described, those skilled in the art will understand that these embodiments are capable of various changes, modifications, substitutions, and variations without departing from the principles and purposes of the present application, and the scope of the present application is limited by the claims and their equivalents.

[0085] The above has specifically described the preferred embodiments of the present application. However, the present application is not limited to the above embodiments, and those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present application. These equivalent modifications or substitutions shall be included within the scope limited by the claims of the present application.

Claims

1. forming a first semi-finished board including an embedded device and a first metal layer, the first metal layer being disposed in intimate contact with a non-pin surface of the embedded device; forming a heat sink based on the first metal layer, the heat sink being in close contact with a non-pin surface of the embedded device; fabricating a heat dissipation copper pillar on the heat dissipation plate; providing a dielectric layer covering the heat dissipating copper pillar; depositing a second metal layer onto the dielectric layer; partially etching the second metal layer and the dielectric layer to form a microchannel, the heat dissipation copper pillar and the heat dissipation plate being disposed inside the microchannel, and both the microchannel outlet and inlet being disposed on a side of the first semi-finished board perpendicular to a direction of the first semi-finished board; - making a thin metal layer to form an integral barrier layer on the inner walls of said microchannels to obtain a second semi-finished board; Producing a first coating layer; and compressing the first cover layer and the second semi-finished board to hermetically connect the first cover layer and the barrier layer to obtain an embedded package heat dissipation structure; The first coating layer includes an insulating layer, a metal layer, and a welding layer, the welding layer is hermetically connected to the barrier layer, and the metal layer is provided between the insulating layer and the welding layer, and the step of preparing the first coating layer specifically includes: depositing a first photoresist material on the insulating layer; subjecting the first photoresist material to an exposure, development, etching and ashing process to obtain a metal layer; depositing a second photoresist material over the metal layer; and performing an exposure, development, tinning and ashing process on the second photoresist material to obtain a welding layer.

2. The step of forming a heat sink based on the first metal layer specifically includes: applying a photoresist film to cover the first metal layer; exposing the photoresist film to light to form a heat sink pattern; 2. The method for fabricating an embedded package heat dissipation structure according to claim 1, further comprising: etching the photoresist film and the heat dissipation plate pattern to form a heat dissipation plate.

3. 2. The method for fabricating an embedded package heat dissipation structure as claimed in claim 1, further comprising: a phase change material disposed inside the micro-channel and covering the heat dissipation copper pillar.

4. The step of partially etching the second metal layer and the dielectric layer to form a microchannel specifically includes: forming a window on the second metal layer by performing a photoresist film application process, an exposure process and an etching process in this order, the projection of the window in a direction perpendicular to the semi-finished product being the same as the projection of the microchannel in a direction perpendicular to the semi-finished product; 2. The method for fabricating an embedded package heat dissipation structure as claimed in claim 1, further comprising: etching the dielectric layer to expose the heat dissipation plate and the heat dissipation copper pillar and form a micro-channel.

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