Semiconductor module

Abstract

To prevent a failure of a semiconductor module.SOLUTION: A semiconductor module includes a semiconductor chip, a terminal which extends in an extension direction and is electrically connected to the semiconductor chip, a sealing resin which seals the semiconductor chip, and covers at least a part of an upper surface of the terminal and at least a part of a lower surface of the terminal, and a lower side resin which extends in the extension direction from the sealing resin and covers at least a part of a lower surface of the terminal, wherein a length of the lower surface of the terminal in the extension direction covered with the sealing resin and the lower side resin is longer than a length of the upper surface of the terminal in the extension direction covered with the sealing resin, and the sealing resin and the lower side resin are formed of the same material.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a semiconductor module and a method for manufacturing the semiconductor module.

Background Art

[0002] Conventionally, a semiconductor module including a semiconductor chip mounted on a circuit board and a terminal that is electrically connected to the semiconductor chip and outputs current to the outside or receives current from the outside is known (see, for example, Patent Documents 1 to 3). Patent Document 1: Japanese Patent Application Laid-Open No. 11-243173 Patent Document 2: Japanese Patent Application Laid-Open No. 7-30008 Patent Document 3: Japanese Utility Model Application Laid-Open No. 63-131141

Summary of the Invention

Problems to be Solved by the Invention

[0003] It is preferable to prevent a failure of the semiconductor module.

Means for Solving the Problems

[0004] In order to solve the above problems, in one aspect of the present invention, a semiconductor module is provided. The semiconductor module may include a semiconductor chip. The semiconductor module may include a terminal. The terminal may extend in an extending direction. The terminal may be electrically connected to the semiconductor chip. The semiconductor module may include a sealing resin. The sealing resin may seal the semiconductor chip. The sealing resin may cover at least a part of the upper surface and at least a part of the lower surface of the terminal. The semiconductor module may include a lower resin. The lower resin may extend from the sealing resin in the extending direction. The lower resin may cover at least a part of the lower surface of the terminal. The length of the lower surface of the terminal covered by the sealing resin and the lower resin in the extending direction may be greater than the length of the upper surface of the terminal covered by the sealing resin in the extending direction. The sealing resin and the lower resin may be formed of the same material.

[0005] In a second aspect of the present invention, a method for manufacturing a semiconductor module is provided. The method for manufacturing a semiconductor module may include the step of arranging a semiconductor chip and a terminal extending in an extending direction. The method for manufacturing a semiconductor module may include the step of encapsulating the semiconductor chip and forming an encapsulation resin so as to cover at least a part of the upper surface of the terminal and at least a part of the lower surface of the terminal. The method for manufacturing a semiconductor module may include the step of forming a lower resin that extends from the encapsulation resin in the extending direction and covers at least a part of the lower surface of the terminal. The length of the lower surface of the terminal covered by the encapsulation resin and the lower resin in the extending direction may be greater than the length of the upper surface of the terminal covered by the encapsulation resin in the extending direction. The encapsulation resin and the lower resin may be formed of the same material.

[0006] Note that the above summary of the invention does not list all the features of the present invention. Also, sub-combinations of these feature groups can also be inventions.

Brief Description of the Drawings

[0007]

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Embodiments for Carrying Out the Invention

[0008] Hereinafter, the present invention will be described through embodiments of the invention. However, the following embodiments do not limit the invention according to the claims. Also, not all combinations of features described in the embodiments are essential for the solution means of the invention. In this specification and the drawings, elements having substantially the same function and configuration are denoted by the same reference numerals to omit duplicate explanations, and elements not directly related to the present invention are omitted from the illustration. Also, in one drawing, elements having the same function and configuration may be represented by representative reference numerals, and other elements may be omitted from the reference numerals.

[0009] In this specification, one side in the direction parallel to the depth direction of the semiconductor chip is referred to as "upper", and the other side is referred to as "lower". Of the two main surfaces of the substrate, layer, or other member, one surface is referred to as the upper surface and the other surface is referred to as the lower surface. The directions of "upper" and "lower" are not limited to the direction of gravity or the direction during the mounting of the semiconductor module.

[0010] In this specification, when explaining technical matters, orthogonal coordinate axes of the X-axis, Y-axis, and Z-axis may be used. The orthogonal coordinate axes only specify the relative positions of the components and do not limit a specific direction. For example, the Z-axis does not limit and indicate the height direction with respect to the ground. Note that the +Z-axis direction and the -Z-axis direction are opposite directions. When described as the Z-axis direction without specifying positive or negative, it means the directions parallel to the +Z-axis and -Z-axis. In this specification, the orthogonal axes parallel to the upper and lower surfaces of the semiconductor chip are defined as the X-axis and Y-axis. Also, the axis perpendicular to the upper and lower surfaces of the semiconductor substrate is defined as the Z-axis. In this specification, the direction of the Z-axis may sometimes be referred to as the depth direction. Also, in this specification, the directions parallel to the upper and lower surfaces of the semiconductor substrate, including the X-axis and Y-axis, may sometimes be referred to as the horizontal direction.

[0011] In this specification, when referred to as "identical" or "equal", it may include cases having errors due to manufacturing variations or the like. The error is, for example, within 10%.

[0012] FIG. 1 is a diagram showing an example of a semiconductor module 100 according to an embodiment of the present invention. The semiconductor module 100 may function as a power conversion device such as an inverter. The semiconductor module 100 includes one or more circuit boards 20. In this specification, the orthogonal axes on the plane where one or more circuit boards 20 are provided are defined as the X-axis and the Y-axis, and the axis perpendicular to the XY plane is defined as the Z-axis. FIG. 1 shows an example of the arrangement of each member in the YZ plane. The circuit board 20 has a predetermined circuit pattern 26 provided on one surface of an insulating substrate 21 and a heat sink 22 provided on the other surface. The circuit pattern 26 and the heat sink 22 may be configured by directly bonding or bonding via a brazing layer a copper plate, an aluminum plate, or a plate plated with these materials to the insulating substrate 21 such as silicon nitride ceramics or aluminum nitride ceramics. Note that the circuit board 20 may be a conductive member such as a copper plate or an aluminum plate with an insulating sheet bonded thereto. That is, it may be a plate-like member in which a conductive member and an insulating member are integrated.

[0013] One or more semiconductor chips 40 are mounted on the circuit board 20. In the example of FIG. 1, one semiconductor chip 40 is mounted. The bonding portion 30 bonds the semiconductor chip 40 to the circuit pattern 26 of the circuit board 20. The bonding portion 30 is solder or the like. The semiconductor chip 40 and the like are protected by a sealing resin 12. In this example, the semiconductor chip 40 and the like are protected by the sealing resin 12 formed by transfer molding. The sealing resin 12 is in contact with the semiconductor chip 40. When formed by transfer molding, the shape of the sealing resin 12 is fixed by using a mold. The sealing resin 12 in this example is not housed in a resin case. That is, the side surface of the sealing resin 12 is not covered by other resin.

[0014] The semiconductor chip 40 may include an insulated gate bipolar transistor (IGBT), a diode such as a FWD (Free Wheel Diode), an RC (Reverse Conducting)-IGBT combining these, and a MOS transistor or the like.

[0015] The semiconductor chip 40 in this example is a vertical chip with electrodes (e.g., emitter electrode and collector electrode) formed on the upper and lower surfaces. The semiconductor chip 40 is connected to the circuit pattern 26 of the circuit board 20 by the electrode formed on the lower surface, and is connected to the wiring member by the electrode formed on the upper surface. Note that the semiconductor chip 40 is not limited to a vertical chip. The semiconductor chip 40 may have an electrode connected to the circuit pattern 26 on the upper surface.

[0016] The heat sink 22 may cover at least a part or the whole of the lower surface of the insulating substrate 21. The cooling part 16 is directly or indirectly connected to the circuit board 20. In this example, the cooling part 16 may cover at least a part or the whole of the lower surface of the heat sink 22. The cooling part 16 may be provided below the circuit board 20. The joining part 24 joins the heat sink 22 of the circuit board 20 to the cooling part 16. The joining part 24 is solder or the like. The cooling part 16 contains a refrigerant such as water or gas inside. The cooling part 16 cools the semiconductor chip 40 via the heat sink 22 or the like.

[0017] The upper surface of the semiconductor chip 40 is connected to the wiring member via a joining part 32 such as solder. The wiring members in this example are the lead frame 50 and the wire 27. The lead frame 50 is a member formed of a metal material such as copper or aluminum. At least a part of the surface of the lead frame 50 may be plated with nickel or the like. Also, at least a part of the surface of the lead frame 50 may be coated with resin or the like. The lead frame 50 may have a plate-like part. The plate-like shape refers to a shape in which the areas of the two main surfaces arranged opposite to each other are larger than the areas of the other surfaces. At least the part of the lead frame 50 connected to the semiconductor chip 40 may be plate-like. The lead frame 50 may be formed by bending a single metal plate.

[0018] The lead frame 50 connects the semiconductor chip 40 and the circuit pattern 26. A main current may flow through the lead frame 50. Here, the main current is the maximum current among the currents flowing through the semiconductor chip 40. The lead frame 50 of this example has a chip connection portion 52, a bridging portion 54, and a circuit pattern connection portion 56. The chip connection portion 52 is a portion joined to the upper surface of the semiconductor chip 40. The chip connection portion 52 is joined to the upper surface of the semiconductor chip 40 via a joining portion 32 such as solder. The circuit pattern connection portion 56 is a portion connected to the upper surface of the circuit pattern 26. The circuit pattern connection portion 56 is joined to the upper surface of the circuit pattern 26 via a joining portion 34 such as solder. The chip connection portion 52 and the circuit pattern connection portion 56 may be plate-like portions substantially parallel to the XY plane. Note that substantially parallel means, for example, a state where the angle is 10 degrees or less.

[0019] The bridging portion 54 connects the chip connection portion 52 and the circuit pattern connection portion 56. The bridging portion 54 is arranged away from a conductive member such as the circuit pattern 26. The bridging portion 54 of this example is arranged above the circuit pattern 26 and the like, and is provided so as to straddle the circuit pattern 26 and the like from the chip connection portion 52 to the circuit pattern connection portion 56.

[0020] The wire 27 connects the semiconductor chip 40 and the terminal 36-2. The wire 27 may be connected to the gate terminal of the semiconductor chip 40. A voltage for controlling the gate of the semiconductor chip 40 may be applied to the wire 27.

[0021] The semiconductor module 100 may include a plurality of terminals 36. In this example, the semiconductor module 100 includes a terminal 36-1 and a terminal 36-2. The terminal 36 is a member formed of a metallic material such as copper or aluminum, similar to the lead frame 50. At least a part of the surface of the terminal 36 may be plated with nickel or the like. Also, at least a part of the surface of the terminal 36 may be coated with resin or the like. The terminal 36-1 and the terminal 36-2 are electrically connected to the semiconductor chip 40. In this example, the terminal 36 is electrically connected to the electrode formed on the upper surface of the semiconductor chip 40 via the lead frame 50 and the circuit pattern 26. Therefore, a main current may flow through the terminal 36-1. The terminal 36-1 may be connected to an external wiring or the like and output the main current to the outside. Also, in this example, the terminal 36-2 is electrically connected to the gate terminal of the semiconductor chip 40 via the wire 27. That is, the gate of the semiconductor chip 40 may be controlled by controlling the current flowing through the terminal 36-2. The terminal 36-2 may be connected to an external wiring or the like and current may be input from the outside. The terminal 36-1 extends in the extending direction (the Y-axis direction in this example). Also, the terminal 36-2 extends in the extending direction (the Y-axis direction in this example).

[0022] In this example, the encapsulating resin 12 encapsulates the semiconductor chip 40, as well as the lead frame 50 and the wire 27 as wiring members. That is, the encapsulating resin 12 covers the entire semiconductor chip 40 and wiring members so that the semiconductor chip 40 and the wiring members are not exposed. The semiconductor chip 40 and the wiring members can be protected by the encapsulating resin 12. The encapsulating resin 12 may contain an epoxy resin. Further, the encapsulating resin 12 may contain a silicone gel. The encapsulating resin 12 does not have to be limited to an epoxy resin or a silicone gel. The encapsulating resin 12 may also contain a ceramic filler. Note that the encapsulating resin 12 encapsulates at least a part of the terminal 36-1. Also, the encapsulating resin 12 encapsulates at least a part of the terminal 36-2. The encapsulating resin 12 covers at least a part of the upper surface 37 of the terminal 36 and at least a part of the lower surface 38 of the terminal 36. In this example, the lower surface 38 of the terminal 36 is the surface of the terminal 36 that faces the cooling part 16. The lower surface 38 of the terminal 36 may be the surface of the terminal 36 that faces the conductive member (the cooling part 16 in this example) on the outside of the encapsulating resin 12. In this example, the terminal 36-1 and the terminal 36-2 are exposed from the encapsulating resin 12. Each terminal 36 extends in the Y-axis direction from the side surface 13 of the encapsulating resin 12.

[0023] Since the terminal 36-1 is exposed from the encapsulating resin 12, when the terminal 36-1 is deformed (including tilting and bending) when the circuit board 20 and the cooling part 16 are joined, the insulation distance between the cooling part 16 and the terminal 36-1 may not be ensured. If the insulation distance between the cooling part 16 and the terminal 36-1 cannot be ensured, it may cause a failure of the semiconductor module 100.

[0024] In this example, the semiconductor module 100 includes a lower resin 14. In FIG. 1, the boundary between the encapsulation resin 12 and the lower resin 14 is indicated by a dashed line. The boundary between the encapsulation resin 12 and the lower resin 14 may coincide with the side surface 25 of the joint portion 24. The lower resin 14 covers at least a part of the lower surface 38 of the terminal 36-1. Since the semiconductor module 100 includes the lower resin 14 that covers at least a part of the lower surface 38 of the terminal 36-1, it is possible to prevent a shortage of the insulation distance between the cooling portion 16 and the terminal 36-1 caused by deformation of the terminal 36-1. Therefore, failures of the semiconductor module 100 can be prevented. Also, even if the cooling portion 16 and the terminal 36-1 are not arranged at a wide interval, the insulation distance between the cooling portion 16 and the terminal 36-1 can be ensured, and miniaturization of the semiconductor module 100 can be achieved. Also, the tip 42 of the terminal 36-1 may or may not be covered by the lower resin 14. In this example, the tip 42 of the terminal 36-1 is not covered by the lower resin 14.

[0025] The encapsulation resin 12 and the lower resin 14 are formed of the same material. In this example, both the encapsulation resin 12 and the lower resin 14 are epoxy resins. By forming the encapsulation resin 12 and the lower resin 14 of the same material, the connection between the encapsulation resin 12 and the lower resin 14 can be strengthened. Also, the encapsulation resin 12 and the lower resin 14 may be integrally formed. The encapsulation resin 12 and the lower resin 14 can be integrally formed by transfer molding. That the encapsulation resin 12 and the lower resin 14 are integrally formed may mean that there is no joint between the encapsulation resin 12 and the lower resin 14. Also, since the lower resin 14 is an epoxy resin as an example, the terminal 36-1 and the lower resin 14 may be adhered.

[0026] Also, the lower resin 14 extends from the encapsulation resin 12 in the extending direction (the Y-axis direction in this example). In this example, the length L1 that the lower surface 38 of the terminal 36-1 is covered by the encapsulation resin 12 and the lower resin 14 in the extending direction is greater than the length L2 that the upper surface 37 of the terminal 36-1 is covered by the encapsulation resin 12 in the extending direction. In this example, the length L1 that the lower surface 38 of the terminal 36-1 is covered by the encapsulation resin 12 and the lower resin 14 in the extending direction includes the portion where the lower surface 38 of the terminal 36-1 is connected to the circuit pattern 26. By configuring the lower resin 14 in such a manner, it is possible to prevent the insufficient insulation distance between the cooling portion 16 and the terminal 36-1 caused by the deformation of the terminal 36-1.

[0027] The length L3 that the lower surface 38 of the terminal 36-1 is covered by the lower resin 14 in the extending direction may be 30% or more of the length L4 that the lower surface 38 of the terminal 36-1 is not covered by the encapsulation resin 12 in the extending direction. The length L4 that the lower surface 38 of the terminal 36-1 is not covered by the encapsulation resin 12 in the extending direction may be the length that the upper surface 37 of the terminal 36-1 is not covered by the encapsulation resin 12 in the extending direction. By setting the length L3 to be 30% or more of the length L4, it becomes easier to inhibit the deformation of the terminal 36-1. The length L3 may be 40% or more of the length L4. The length L3 may be 50% or more of the length L4.

[0028] The lower resin 14 is disposed between the terminal 36-1 and the cooling portion 16. By disposing the lower resin 14 between the terminal 36-1 and the cooling portion 16, the insulation distance between the cooling portion 16 and the terminal 36-1 can be ensured. In this example, the lower resin 14 is disposed away from the cooling portion 16.

[0029] Also, the thickness T1 of the lower resin 14 in the height direction is greater than the thickness T2 of the terminal 36-1 in the height direction. That is, the thickness T1 of the lower resin in the height direction is the same as the distance between the terminal 36-1 and the joint 24 in the height direction. The distance between the terminal 36-1 and the joint 24 in the height direction may be the shortest distance in the height direction between the lower surface 38 of the terminal 36-1 and the upper surface of the joint 24. By making the thickness T1 of the lower resin 14 in the height direction greater than the thickness T2 of the terminal 36-1 in the height direction, it becomes easier to further inhibit the deformation of the terminal 36-1. Also, the thickness T1 of the lower resin 14 in the height direction may be twice or more the thickness T2 of the terminal 36-1 in the height direction. The thickness T1 of the lower resin 14 in the height direction may be three times or more the thickness T2 of the terminal 36-1 in the height direction. Also, in this example, the thickness T2 of the lower resin 14 in the height direction is constant. By "constant thickness" it may be considered constant even if there is an error within 10%.

[0030] FIG. 2 is a diagram showing an example of the semiconductor module 100 in a top view. In the top view, the semiconductor module 100 includes a sealing resin 12, a cooling part 16, a terminal 36-1, and a terminal 36-2. In FIG. 2, the range where the lower resin 14 is provided is indicated by hatching. In this example, as the terminal 36, the semiconductor module 100 includes only the terminal 36-1 and the terminal 36-2, but the semiconductor module 100 may include three or more terminals 36.

[0031] In this example, the lower resin 14 is provided in the range where the terminal 36-1 is provided. The lower resin 14 is provided only on the lower surface 38 of the terminal 36-1. Since the lower resin 14 is provided only on the lower surface 38 of the terminal 36-1, the amount of the encapsulating resin 12 can be reduced, and the manufacturing cost can be reduced. Note that the lower resin 14 may be provided in the range where the terminal 36-2 is provided, similar to the terminal 36-1. The lower resin 14 may be provided in the range where some of the terminals 36-1 are provided, or may be provided in the range where all of the terminals 36-1 and 36-2 are provided. When the lower resin 14 is provided only in the range where some of the terminals 36-1 are provided, these some terminals 36-1 may have a greater width in the X-axis direction or a greater thickness in the Z-axis direction than the other terminals 36-2. Also, these some terminals 36-1 may be main terminals through which the main current flows.

[0032] FIG. 3 is a diagram showing an example of a semiconductor module 200 according to one embodiment of the present invention. The semiconductor module 200 in FIG. 3 has a different shape of the encapsulating resin 12 and the lower resin 14 from the semiconductor module 100 in FIG. 1. Other configurations of the semiconductor module 200 may be the same as those of the semiconductor module 100.

[0033] In this example, the thickness T1 of the lower resin 14 in the height direction becomes smaller as it approaches the tip 42 of the terminal 36-1 from the encapsulating resin 12. In FIG. 3, the thickness T1 of the lower resin 14 in the height direction is constant from the encapsulating resin 12 to the point 44, and linearly decreases from the point 44. With such a configuration, when the lower resin 14 is formed by transfer molding, it becomes easier to remove the mold. Therefore, the lower resin 14 can be easily formed.

[0034] Also, in this example, the thickness T4 of the encapsulating resin 12 in the height direction becomes smaller as it approaches the tip 42 of the terminal 36-1 from the encapsulating resin 12. In FIG. 3, the thickness T4 of the encapsulating resin 12 in the height direction linearly decreases from the point 46. With such a configuration, when formed by transfer molding, the encapsulating resin 12 can be easily formed.

[0035] FIG. 4 is a diagram showing an example of a semiconductor module 300 according to an embodiment of the present invention. In the semiconductor module 300 of FIG. 4, the shapes of the encapsulating resin 12 and the lower resin 14 are different from those of the semiconductor module 100 of FIG. 1. Other configurations of the semiconductor module 300 may be the same as those of the semiconductor module 100.

[0036] In this example, similar to FIG. 3, the thickness T1 of the lower resin 14 in the height direction becomes smaller as it approaches the tip 42 of the terminal 36-1 from the encapsulating resin 12. In FIG. 4, the thickness T1 of the lower resin 14 in the height direction is constant from the encapsulating resin 12 to the point 44 and becomes smaller from the point 44. In FIG. 4, the shape of the lower resin 14 has a skirt along the lower surface 38 of the terminal 36-1. That is, the shape of the lower resin 14 is convex with respect to the lower surface 38 of the terminal 36-1. Even with such a configuration, the lower resin 14 can be easily formed when formed by transfer molding.

[0037] Also, in this example, the thickness T4 of the encapsulating resin 12 in the height direction becomes smaller as it approaches the tip 42 of the terminal 36-1 from the encapsulating resin 12. In FIG. 4, the thickness T4 of the encapsulating resin 12 in the height direction becomes smaller from the point 46. In FIG. 4, the shape of the encapsulating resin 12 has a skirt along the upper surface 37 of the terminal 36. That is, the shape of the encapsulating resin 12 is convex with respect to the upper surface 37 of the terminal 36-1. Even with such a configuration, the encapsulating resin 12 can be easily formed when formed by transfer molding.

[0038] FIG. 5 is a diagram showing an example of a semiconductor module 400 according to an embodiment of the present invention. In the semiconductor module 400 of FIG. 5, the shape of the lower resin 14 is different from that of the semiconductor module 100 of FIG. 1. Other configurations of the semiconductor module 400 may be the same as those of the semiconductor module 100.

[0039] In this example, similar to FIGS. 3 and 4, the thickness T1 of the lower resin 14 in the height direction decreases as it approaches the tip 42 of the terminal 36-1 from the sealing resin 12. In FIG. 5, the thickness T1 of the lower resin 14 in the height direction is constant from the sealing resin 12 to the point 44 and changes stepwise from the point 44. Even with such a configuration, when formed by transfer molding, the lower resin 14 can be easily formed.

[0040] FIG. 6 is a diagram showing an example of a semiconductor module 500 according to an embodiment of the present invention. The shape of the lower resin 14 of the semiconductor module 500 in FIG. 6 is different from that of the semiconductor module 100 in FIG. 1. Other configurations of the semiconductor module 500 may be the same as those of the semiconductor module 100.

[0041] In this example, similar to FIGS. 3, 4, and 5, the thickness T1 of the lower resin 14 in the height direction decreases as it approaches the tip 42 of the terminal 36-1 from the sealing resin 12. In FIG. 6, the thickness T1 of the lower resin 14 in the height direction is constant from the sealing resin 12 to the point 44, changes with a slope from the point 44 to the point 45, and changes parallel to the height direction from the point 45. Even with such a configuration, when formed by transfer molding, the lower resin 14 can be easily formed.

[0042] FIG. 7 is a diagram showing an example of a semiconductor module 600 according to an embodiment of the present invention. The shape of the lower resin 14 of the semiconductor module 600 in FIG. 7 is different from that of the semiconductor module 100 in FIG. 1. Other configurations of the semiconductor module 600 may be the same as those of the semiconductor module 100.

[0043] In this example, the lower resin 14 is disposed in contact with the cooling portion 16. That is, the lower surface of the lower resin 14 is in contact with the upper surface of the cooling portion 16. Since the lower resin 14 is disposed in contact with the cooling portion 16, it becomes easier to further inhibit deformation of the terminal 36-1.

[0044] The lower resin 14 may be arranged away from the side surface 25 of the joint portion 24. If the lower resin 14 is in contact with the side surface 25 of the joint portion 24, it may affect the heating conditions of the joint portion 24 and the like, and there is a possibility of poor bonding. Therefore, by arranging the lower resin 14 away from the side surface 25 of the joint portion 24, poor bonding can be reduced.

[0045] FIG. 8 is a diagram showing an example of a semiconductor module 700 according to an embodiment of the present invention. The semiconductor module 700 in FIG. 8 is different from the semiconductor module 100 in FIG. 1 in that a lower resin 14-2 is provided on the lower surface 38 of the terminal 36-2. Other configurations of the semiconductor module 700 may be the same as those of the semiconductor module 100. Also, the lower resin 14 provided on the lower surface 38 of the terminal 36-1 is designated as the lower resin 14-1. In FIG. 8, the boundary between the sealing resin 12 and the lower resin 14-2 is indicated by a dashed line. The boundary between the sealing resin 12 and the lower resin 14-2 may coincide with the side surface 25 of the joint portion 24.

[0046] In this example, a lower resin 14 is provided on the lower surface 38 of each of the plurality of terminals 36. In FIG. 8, a lower resin 14-1 is provided on the lower surface 38 of the terminal 36-1, and a lower resin 14-2 is provided on the lower surface 38 of the terminal 36-2. With such a configuration, not only the insulation distance between the cooling unit 16 and the terminal 36-1 but also the insulation distance between the cooling unit 16 and the terminal 36-2 can be ensured. Also, the lower resin 14-2 may have the shape of the lower resin 14 shown in FIGS. 3 to 7.

[0047] FIG. 9 is a diagram showing an example of the semiconductor module 700 in a top view. In the top view, the semiconductor module 700 includes a sealing resin 12, a cooling unit 16, a terminal 36-1, and a terminal 36-2. In FIG. 9, the range where the lower resin 14 is provided is indicated by hatching. In this example, as the terminal 36, the semiconductor module 700 includes only the terminal 36-1 and the terminal 36-2, but the semiconductor module 100 may include three or more terminals 36.

[0048] In this example, the lower resin 14 is provided in a range where the terminal 36-1 or the terminal 36-2 is provided. The lower resin 14 is provided only on the lower surface 38 of the terminal 36-1 or the terminal 36-2. Since the lower resin 14 is provided only on the lower surface 38 of the terminal 36-1 or the terminal 36-2, the amount of the encapsulating resin 12 can be reduced, and the manufacturing cost can be reduced.

[0049] FIG. 10 is a diagram showing an example of a semiconductor module 800 according to an embodiment of the present invention. The semiconductor module 800 in FIG. 10 is different from the semiconductor module 100 in FIG. 1 in that a coating resin 18 is provided on the upper surface 37 of the terminal 36-1. Other configurations of the semiconductor module 800 may be the same as those of the semiconductor module 100.

[0050] In this example, the coating resin 18 covers at least a part of the upper surface 37 of the terminal 36-1. Similar to the lower resin 14, the coating resin 18 extends in the extending direction (the Y-axis direction in this example) from the encapsulating resin 12. By providing the coating resin 18, the upper surface 37 of the terminal 36-1 can be protected. The coating resin 18 may be made of the same material as the encapsulating resin 12. That is, the coating resin 18 may be integrally formed with the encapsulating resin 12 and the lower resin 14 by transfer molding.

[0051] The thickness T3 of the coating resin 18 in the height direction may be smaller than the thickness T1 of the lower resin 14 in the height direction. By making the thickness T3 of the coating resin 18 in the height direction smaller than the thickness T1 of the lower resin 14 in the height direction, the semiconductor module 100 can be miniaturized. The thickness T3 of the coating resin 18 in the height direction may be larger than the thickness T2 of the terminal 36-1 in the height direction. Also, the length L5 in the extending direction in which the upper surface 37 of the terminal 36-1 is covered by the coating resin 18 may be smaller than the length L3 in the extending direction in which the lower surface 38 of the terminal 36-1 is covered by the lower resin 14.

[0052] FIG. 11 is a diagram showing an example of a semiconductor module 900 according to an embodiment of the present invention. The configuration of the terminal 36-1 of the semiconductor module 900 in FIG. 11 is different from that of the semiconductor module 100 in FIG. 1. Other configurations of the semiconductor module 900 may be the same as those of the semiconductor module 100.

[0053] In this example, the terminal 36-1 is bent at the bending point 15. The bending point 15 is a point provided on the terminal 36-1. In FIG. 11, the terminal 36-1 is bent upward in the height direction at the bending point 15. Also, a lower resin 14 is provided below the bending point 15. By providing the lower resin 14 below the bending point 15, the terminal 36-1 is supported by the lower resin 14, making it easier to bend. Also, since the terminal 36-1 is bent in the height direction at the bending point 15, it becomes easier to connect the external wiring or the like to the terminal 36-1.

[0054] FIG. 12 is a diagram showing an example of a semiconductor module 1000 according to an embodiment of the present invention. The shape of the lower resin 14 of the semiconductor module 1000 in FIG. 12 is different from that of the semiconductor module 100 in FIG. 1. Other configurations of the semiconductor module 1000 may be the same as those of the semiconductor module 100.

[0055] In this example, the thickness T1 of the lower resin 14 in the height direction is equal to or less than the thickness T2 of the terminal 36-1 in the height direction. In FIG. 12, the thickness T1 of the lower resin 14 in the height direction is the same as the thickness T2 of the terminal 36-1 in the height direction. With such a configuration of the lower resin 14, the amount of the encapsulating resin 12 can be reduced, and the manufacturing cost can be reduced.

[0056] FIG. 13 is a diagram showing an example of a method for forming a semiconductor module 100. The method for forming the semiconductor module 100 includes an arrangement step S101, an encapsulating resin formation step S102, a lower resin formation step S103, and a cooling part bonding step S104.

[0057] In the placement step S101, the semiconductor chip 40 and the terminal 36 are placed. The semiconductor chip 40 and the terminal 36 are placed in a mold used in the sealing resin formation step S102 and the lower resin formation step S103. In the placement step S101, the terminal 36 may be supported by an external support base or the like.

[0058] In the sealing resin formation step S102, the sealing resin 12 is formed so as to cover at least a part of the upper surface 37 of the terminal 36 and at least a part of the lower surface 38 of the terminal 36. In the lower resin formation step S103, the lower resin 14 is formed so as to cover at least a part of the lower surface 38 of the terminal 36. The sealing resin formation step S102 and the lower resin formation step S103 are carried out by transfer molding. That is, the sealing resin 12 and the lower resin 14 may be integrally formed. In the sealing resin formation step S102 and the lower resin formation step S103, the resin is introduced into the mold by flowing the resin in the mold. After the sealing resin 12 and the lower resin 14 are solidified, the mold is removed.

[0059] In the cooling part joining step S104, the circuit board 20 and the cooling part 16 are joined by the joining part 24. In this example, since the lower resin 14 is formed, deformation of the terminal 36 can be prevented, and an insulation distance between the cooling part 16 and the terminal 36 can be ensured.

[0060] FIG. 14 is a diagram showing an example of a method for forming the semiconductor module 900. The method for forming the semiconductor module 900 in FIG. 14 is different from the method for forming the semiconductor module 100 in FIG. 13 in that it includes a bending step S105 before the cooling part joining step S104. Other configurations of the method for forming the semiconductor module 900 may be the same as those of the method for forming the semiconductor module 100.

[0061] In the bending step S105, the terminal 36 is bent at the bending point 15. The lower resin 14 may be provided below the bending point 15. Since the terminal 36-1 is supported by the lower resin 14, it becomes easier to bend the terminal 36-1.

[0062] FIG. 15 is a diagram showing an example of the semiconductor module 1100 according to the comparative example. The semiconductor module 1100 in FIG. 15 is different from the semiconductor module 100 in FIG. 1 in that it does not include the lower resin 14. Other configurations of the semiconductor module 1100 may be the same as those of the semiconductor module 100.

[0063] FIG. 16 is a diagram showing a deformation of the terminal 36-1 in the semiconductor module 1100. Since the semiconductor module 1100 does not include the lower resin 14, the terminal 36-1 may be deformed as shown in FIG. 16 from the state shown in FIG. 15. In this case, the insulation distance between the cooling part 16 and the terminal 36-1 cannot be ensured. If the insulation distance between the cooling part 16 and the terminal 36-1 is insufficient, it may cause a failure of the semiconductor module 1100.

[0064] FIG. 17 is a diagram showing an example of the semiconductor module 1200 according to an embodiment of the present invention. FIG. 17 shows the semiconductor module 1200 in a top view. In the top view, the semiconductor module 1200 includes a sealing resin 12, a lower resin 14-1, a cooling part 16, a plurality of terminals 36-1, and a plurality of terminals 36-3. In FIG. 17, the range where the lower resin 14 is provided in the plurality of terminals 36-1 is shown by hatching.

[0065] In this example, as the terminal 36, the semiconductor module 1200 includes a plurality of terminals 36-1 and a plurality of terminals 36-3. In FIG. 17, the semiconductor module 1200 includes two terminals 36-1. The two terminals 36-1 may extend from one side of the sealing resin 12 in the top view. The two terminals 36-1 may be provided adjacent to each other in the X-axis direction. A main current may flow through the two terminals 36-1. The two terminals 36-1 may be connected to an external wiring or the like and output the main current to the outside. The two terminals 36-1 may be main terminals.

[0066] In FIG. 17, the semiconductor module 1200 includes five terminals 36-3. The five terminals 36-3 may extend from one side of the encapsulating resin 12 in a top view. The five terminals 36-3 may be provided adjacent to each other in the X-axis direction. The terminal 36-3 may be a control terminal. That is, each terminal 36-3 may be any control terminal such as a terminal connected to the gate terminal of the semiconductor chip 40, a temperature sense terminal, a current sense terminal, a Kelvin emitter terminal, etc. The terminal 36-3 may have a narrower width in the X-axis direction than the terminal 36-1.

[0067] In this example, a lower resin 14-1 is provided on the lower surface 38 of each of the plurality of terminals 36-1. Also, in FIG. 17, the lower resin 14-1 is continuously provided between the plurality of terminals 36-1 in a top view. The lower resin 14-1 is continuously provided between two terminals 36-1 in a top view. In FIG. 17, the lower resin 14-1 is continuously provided in the X-axis direction between two terminals 36-1 in a top view. One lower resin 14-1 is provided on the lower surface 38 of two terminals 36-1. By adopting such a configuration, an insulation distance between the cooling part 16 and the two terminals 36-1 can be ensured. Also, compared with the case where the lower resin 14-1 is provided only in the range where the terminal 36-1 is provided, the lower resin 14-1 can be easily formed.

[0068] As described above, the present invention has been described using embodiments, but the technical scope of the present invention is not limited to the scope described in the above embodiments. It is obvious to those skilled in the art that various changes or improvements can be made to the above embodiments. It is clear from the description of the claims that forms with such changes or improvements can also be included in the technical scope of the present invention.

Explanation of Reference Numerals

[0069] 12··Sealing resin, 13··Side surface, 14··Lower resin, 15··Bending point, 16··Cooling part, 18··Coating resin, 20··Circuit board, 21··Insulating substrate, 22··Heat sink, 24··Joint part, 25··Side surface, 26··Circuit pattern, 27··Wire, 30··Joint part, 32··Joint part, 34··Joint part, 36··Terminal, 37··Upper surface, 38··Lower surface, 40··Semiconductor chip, 42··Tip, 44··Point, 45··Point, 46··Point, 50··Lead frame, 52··Chip connection part, 54··Crosslinking part, 56··Circuit pattern connection part, 100··Semiconductor module, 200··Semiconductor module, 300··Semiconductor module, 400··Semiconductor module, 500··Semiconductor module, 600··Semiconductor module, 700··Semiconductor module, 800··Semiconductor module, 900··Semiconductor module, 1000··Semiconductor module, 1100··Semiconductor module, 1200··Semiconductor module

Claims

1. A semiconductor chip, A terminal extending in an extending direction and electrically connected to the semiconductor chip, A sealing resin that seals the semiconductor chip and covers at least a part of the upper surface of the terminal and at least a part of the lower surface of the terminal, A lower resin extending from the sealing resin in the extending direction and covering at least a part of the lower surface of the terminal, A circuit board having a predetermined circuit pattern on which the semiconductor chip is placed, A cooling unit provided below the circuit board, A joining portion that joins the circuit board and the cooling unit and comprising: In the extending direction, the length of the lower surface of the terminal covered by the sealing resin and the lower resin is greater than the length of the upper surface of the terminal covered by the sealing resin in the extending direction, The sealing resin and the lower resin are formed of the same material, The lower resin is a semiconductor module disposed between the terminal and the cooling unit.

2. A semiconductor chip, A terminal extending in an extending direction and electrically connected to the semiconductor chip, A sealing resin that seals the semiconductor chip and covers at least a part of the upper surface of the terminal and at least a part of the lower surface of the terminal, A lower resin extending from the sealing resin in the extending direction and covering at least a part of the lower surface of the terminal, A coating resin extending from the sealing resin in the extending direction and covering at least a part of the upper surface of the terminal and comprising: In the extending direction, the length of the lower surface of the terminal covered by the sealing resin and the lower resin is greater than the length of the upper surface of the terminal covered by the sealing resin in the extending direction, The sealing resin and the lower resin are formed of the same material, A semiconductor module in which the thickness of the coating resin in the height direction is smaller than the thickness of the lower resin in the height direction.

3. The length by which the lower surface of the terminal is covered by the lower resin in the extending direction is 30% or more of the length by which the lower surface of the terminal is not covered by the sealing resin in the extending direction. The semiconductor module according to claim 1 or 2.

4. The sealing resin and the lower resin are integrally formed. The semiconductor module according to any one of claims 1 to 3.

5. The lower resin is arranged away from the cooling part. The semiconductor module according to claim 1.

6. The lower resin is arranged in contact with the cooling part. The semiconductor module according to claim 1.

7. The lower resin is arranged away from the side surface of the joint part. The semiconductor module according to claim 6.

8. The thickness of the lower resin in the height direction is larger than the thickness of the terminal in the height direction. The semiconductor module according to claim 1 or any one of claims 5 to 7.

9. The thickness of the lower resin in the height direction is the same as the distance between the terminal and the joint part in the height direction. The semiconductor module according to claim 8.

10. The thickness of the lower resin in the height direction is less than or equal to the thickness of the terminal in the height direction. The semiconductor module according to claim 1 or any one of claims 5 to 7.

11. Comprising a plurality of the terminals, The lower resin is provided on the lower surface of each of the plurality of terminals. The semiconductor module according to any one of claims 1 to 10.

12. The lower resin is continuously provided between the plurality of terminals in a top view. The semiconductor module according to claim 11.

13. The terminal and the lower resin are adhered to each other. The semiconductor module according to any one of claims 1 to 12.

14. The thickness of the lower resin in the height direction is constant. The semiconductor module according to any one of claims 1 to 13.

15. The thickness of the lower resin in the height direction decreases as it approaches the tip of the terminal from the sealing resin. The semiconductor module according to any one of claims 1 to 13.

16. The shape of the lower resin is trailing along the lower surface of the terminal. The semiconductor module according to claim 15.

17. The terminal is bent at a bending point, and the lower resin is provided below the bending point. The semiconductor module according to any one of claims 1 to 16.

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