Reactor, system including the reactor, and method for manufacturing and using the same

Abstract

To provide a reactor for processing substrates and methods for manufacturing and using the reactor.SOLUTION: A reactor 100 includes: a reaction chamber 110 comprising a first material; a susceptor 120 comprising a second material and being configured to hold a substrate for processing; a gas distribution structure 130 comprising a third material; and a first gas supply source 160 for providing a first gas precursor to the reaction chamber in a process of etching a film on the substrate. The first material, the second material, and the third material react with one or more of the first gas precursor and a second gas precursor to form a gas compound (having volatility) purgeable from the reaction chamber. After that, the gas compound is easily removed from the reactor, thus reducing or avoiding contamination of the substrate in the reactor.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure generally relates to vapor phase systems, reactors, and methods. More specifically, the present disclosure relates to vapor phase reactors, systems, and methods that can be used in the production of devices such as semiconductor devices.

Background Art

[0002] Semiconductor device manufacturing can include a dry etching process within a substrate processing reactor. The dry etching process may include, for example, exposing the substrate to the impact of ions generated by a reactive gas. The reactive gas may include a halide chemical such as a gas having fluoride atoms or chloride atoms. The dry etching process may utilize a remote plasma or a direct plasma to activate the reactive gas (e.g., to form ions and / or other reactive species).

[0003] The substrate may have a corrosion-resistant material, such as a transition metal nitride, a transition metal oxide, or a transition metal carbide, that is etched during the dry etching process. These corrosion-resistant materials may require highly reactive etching gases to react with the corrosion-resistant material. During the etching process, the highly reactive gas may not only etch material from the substrate but also react with the walls of the substrate processing reactor. This can result in the formation of contaminants and the deposition of contaminants onto the substrate being processed. The problem of contaminants increases when the reactor operates at higher temperatures and / or with certain chemicals.

[0004] As a result, reactors, systems, and methods for reducing or decreasing contaminants on the substrate are desirable.

Summary of the Invention

[0005] Various embodiments of the present disclosure provide an improved system, reactor, and method for processing substrates within a reactor. While various drawbacks of the prior art are discussed in more detail below, generally, the system, reactor, and method can be used to assemble devices while reducing contaminants on the surface of the substrate that would otherwise occur.

[0006] According to at least one embodiment of the present disclosure, a system (e.g., a semiconductor processing system) includes a reaction chamber containing a first material, a susceptor containing a second material and configured to hold a substrate for processing, a gas distribution structure (e.g., a showerhead) containing a third material, and a first gas source for providing a first gas precursor into the reaction chamber in a process of etching a film on a substrate, wherein the first material, the second material, and the third material react with one or more of the first gas precursor and a second gas precursor to form a gas compound that can be purged (e.g., volatile) from the reaction chamber.

[0007] According to at least one other embodiment of the present disclosure, a method of forming a semiconductor processing device includes providing a reaction chamber containing a first material, providing a susceptor containing a second material and configured to hold a substrate for processing, providing a gas distribution structure (e.g., a showerhead) containing a third material, and providing a first gas source for providing a first gas precursor into the reaction chamber in a process of etching a film on a substrate, wherein the first material, the second material, and the third material react with one or more of the first gas precursor and a second gas precursor to form a gas compound that can be purged (e.g., volatile) from the reaction chamber.

[0008] To summarize the invention and advantages achieved over the prior art, certain objects and advantages of the present invention have been described above herein. It should of course be understood that not necessarily all such objects or advantages may be achieved by any particular embodiment of the present invention. Therefore, for example, one skilled in the art will recognize that the present invention may be embodied or practiced in a manner that achieves or optimizes one advantage or group of advantages as taught or suggested herein, without necessarily achieving other objects or advantages that may be taught or suggested herein.

[0009] All of these embodiments are intended to be within the scope of the invention disclosed herein. These and other embodiments will be readily apparent to one skilled in the art from the following forms for carrying out the invention of the embodiments with reference to the accompanying drawings, and the present invention is not limited to any particular embodiment(s) disclosed.

Brief Description of the Drawings

[0010] These and other features, aspects, and advantages of the invention disclosed herein are described below with reference to the drawings of certain embodiments, which are intended to be illustrative and not intended to limit the invention.

[0011]

Figure 1

[0012]

Figure 2

[0013] Of course, the elements in the figures are illustrated for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to assist in the understanding of the illustrated embodiments of the present disclosure.

Modes for Carrying Out the Invention

[0014] Certain specific embodiments and examples are disclosed below, but it will be understood by those skilled in the art that the present invention extends beyond the specifically disclosed embodiments and / or uses of the present invention and their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited by the specific disclosed embodiments described below.

[0015] As described in further detail below, exemplary embodiments of the present disclosure are directed to a reactor in which a film on a substrate is etched, a system including such a reactor, and methods of forming and using the reactor and the system. By way of example, embodiments of the present disclosure may relate to methods of etching via an atomic layer etching (ALE) process. Examples of films that can be etched using the systems and methods described herein include transition metal nitrides, transition metal oxides, and transition metal carbides. Examples of the types of gases used to etch these films include mixed halide chemical substances, particularly those having fluorine, chlorine, and / or bromine chemical substances.

[0016] These mixed halide chemical substances typically also etch the materials forming the walls and components of the reactor. When using a conventional reactor, for example, a nickel reaction chamber, significant contamination on the substrate surface can occur when a combination gas chemical substance of fluorine and chlorine is used to process the substrate in the reaction chamber. In this case, the gas may react with the nickel reaction chamber and form nickel halides that can contaminate the substrate surface.

[0017] Figure 1 illustrates a reactor 100 according to at least one embodiment of the present invention. (For example, etching) The reactor 100 may include a reaction chamber 110, a susceptor 120, and a showerhead 130 or other suitable gas distribution structure. The showerhead / gas distribution structure 130 can disperse gas precursors coming from the remote plasma unit 140. The susceptor 120 holds the substrate 150 to be processed.

[0018] The reactor 100 may also include a first gas source 160 and a second gas source 170. The first gas source 160 and the second gas source 170 are illustrated as supplying gas to the remote plasma unit 140, but additionally or alternatively, the gas(es) may be provided directly to the reaction chamber 110 without passing through the remote plasma unit 140. The first gas source 160 and / or the second gas source 170 may be a metal halide gas, for example, a halide of a transition metal or aluminum (e.g., TiCl4, TiF4, TiCl x 、TiF x 、MoCl x 、MoF x 、WCl x 、WF x 、NbCl x 、NbF x 、TaCl x 、TaF x 、VCl x 、VF x 、AlCl x 、HfCl x 、and / or ZrCl xIt may provide fluorine, chlorine, bromine, etc. (including one or more of them). The first gas supply source 160 and / or the second gas supply source 170 may provide a halide gas including an organic halide such as SbF5, CCl4, and / or a metal oxyhalide such as WOCl4, and a non-metal halide such as WOF4. As described in more detail below, the precursor from the first gas supply source 160 and / or the second gas supply source 170 reacts with the reaction chamber 110 material(s) and / or the material(s) deposited on a part of the reaction chamber 110 to produce a gas compound that can be removed relatively easily (e.g., purged from the reaction chamber 110). As used herein, "precursor" or "gas precursor" refers to a compound that participates in a chemical reaction to produce another compound. The precursor may be a gas from a gas supply source (e.g., gas supply sources 160, 170), and / or other chemical substances such as chemical species generated when the gas is exposed to a plasma that may be direct or remote, such as in the reaction chamber 110. The characteristics of the precursor(s) (e.g., metal halide gas(es)) and the gas compound are such that they have a high saturated vapor pressure to enable efficient purging, have relatively little or no condensation, and also promote or facilitate keeping the contaminants in the reaction chamber low. The first and / or second gas supply sources 160, 170 may provide precursor(s) containing at least one halide atom such as chlorine, fluorine, or bromine, for example, from NbF5 or CCl4. Although two gas supply sources are illustrated, the reactor 100 may include any suitable number of gas supply sources including purge, carrier, and / or other reactant gas supply sources.

[0019] In some embodiments, the reaction chamber may be maintained at a reaction temperature or process temperature of less than 1000 °C and greater than about 20 °C, greater than about 100 °C, greater than about 200 °C, greater than about 300 °C, greater than about 400 °C, greater than about 450 °C, or from about 20 °C to about 700 °C, from about 100 °C to about 700 °C, from about 200 °C to about 500 °C, or from about 250 °C to about 450 °C. Suitable reactive gases and process conditions are found in U.S. Patent Application Serial No. 15 / 835,262, entitled "THERMAL ATOMIC LAYER ETCHING PROCESSES", filed December 7, 2017, and PCT Application No. PCT / US2017 / 065170, entitled "THERMAL ATOMIC LAYER ETCHING PROCESSES", filed December 7, 2017, the contents of both of which are incorporated herein by reference to the extent not inconsistent with the present disclosure.

[0020] The components of the reactor 100 may be made of materials that react with precursors (e.g., metal halide gases) from the first source 160 and / or the second gas source 170 to form (e.g., volatile) gas compounds. In particular, the reaction chamber 110, the susceptor 120, and / or the showerhead 130 can be made of materials that will react with the metal halide gas to form a gas compound. Examples of materials include tungsten, molybdenum, titanium, niobium, tantalum, vanadium, aluminum, hafnium, zirconium, zinc, and mixtures and alloys thereof, such as vanadium alloys, zinc alloys, quartz, borosilicate quartz, or stainless steel. Other components of the reactor 100 that can be made of the materials listed above include gas lines, gas distribution blocks, heater plates, and gaskets, each of which may be a potential source of contamination.

[0021] FIG. 2 illustrates another reactor 200 according to at least one embodiment of the present disclosure. The reactor 200 may include a reaction chamber 210, a reaction chamber lining 220, a susceptor 230, and a gas distribution structure (e.g., a showerhead 240). The reaction chamber lining 220 may be a coating that includes a material deposited onto the reaction chamber 210. Additionally or alternatively, reactor 200 components downstream and / or upstream from the reaction chamber, such as gas lines and pump lines, may similarly be coated. Similar to reactor 100, although illustrated as a vertical flow reactor having a showerhead 240, reactor 200 may alternatively include a cross-flow reaction chamber instead of a showerhead type of reaction chamber. The showerhead 240 may disperse gas precursors coming from the remote plasma unit 260 and / or the first gas source or the second gas source described below. The susceptor 230 holds the substrate 250 to be processed.

[0022] The reactor 200 may also include a first gas source 270 and a second gas source 280. The first gas source 270 and the second gas source 280 are illustrated as supplying gas to the remote plasma unit 260, but additionally or alternatively, gas may be provided directly to the reaction chamber 210 without passing through the remote plasma unit 260. The first gas source 270 and / or the second gas source 280 may be a transition metal or an aluminum halide (such as fluorine, chlorine, or bromine) (e.g., TiCl4, TiF4, TiCl x 、TiF x 、MoCl x 、MoF x 、WCl x 、WF x 、NbCl x 、NbF x 、TaCl x 、TaF x 、VCl x 、VF x 、AlCl x 、HfCl x 、or ZrCl xA metal halide gas (including one or more of the like) may be provided. The first gas supply source 270 and / or the second gas supply source 280 may provide a halide gas containing a non-metal halide such as SbF5, an organic halide such as CCl4, or a metal oxyhalide such as WOF4. The precursors from the first gas supply source 270 and / or the second gas supply source 280 react with the chamber lining 220 to form a gas compound that has a high saturation vapor pressure to enable efficient purging, has little or no condensation, and keeps the contaminants in the reaction chamber 210 low. The first gas supply source 270 and the second gas supply source 280 may provide a precursor containing at least one halide atom such as chlorine, fluorine, and / or bromine, such as NbF5 or CCl4.

[0023] Components including the lining 220 of the reactor 200 may be made of materials that react with precursors from one or more gas sources 270, 280 (e.g., one or more metal halide gases) to form (e.g., volatile) gas compounds. In particular, the reaction chamber lining 220, the susceptor 230, and / or the showerhead 240 can be made of materials that react with the first precursor and / or the second precursor to form a gas compound. The materials can include, for example, at least one of tungsten, molybdenum, titanium, niobium, tantalum, vanadium, aluminum, hafnium, zirconium, zinc, vanadium alloys, zinc alloys, quartz, borosilicate quartz, stainless steel. Other components of the reactor 200 that can be made and / or coated using the materials listed above include gas lines, gas distribution blocks, heater plates, and gaskets, as each of these can potentially be a source of contamination. According to some embodiments, the components made and / or coated with materials that react with the first precursor and / or the second precursor include the surfaces of the components located from below or downstream of the showerhead plate to the pump line. According to an exemplary embodiment, the components made and / or coated with materials that react with the first precursor and / or the second precursor include the surfaces of the components located from downstream of the point where the gas enters the space above the showerhead plate to the pump line. In some embodiments, the components made and / or coated with materials that react with the first precursor and / or the second precursor include the surfaces of the components located from downstream of the point of the last valve before the reaction chamber to the pump line. In some embodiments, the components made and / or coated with materials that react with the first precursor and / or the second precursor include the surfaces of the components located from downstream of the point of the second-to-last valve before the reaction chamber to the pump line. In some embodiments, the components made and / or coated with materials that react with the first precursor and / or the second precursor include the surfaces of the components located in a region having a temperature difference of less than about 400 °C, less than about 300 °C, less than about 200 °C, less than about 150 °C, less than about 100 °C, less than about 50 °C, or less than about 25 °C between the reaction chamber temperature and the edge of the reaction region.The point of the pump line can be considered as a point downstream from the reaction chamber or the substrate, from which chemicals, reaction by-products, particles, or other materials can no longer affect the product or substrate within the reaction chamber, or the life of the reaction chamber, in a harmful way, or can have any other harmful effects on the operation of the process, product, substrate, or reactor.

[0024] The reaction chamber lining 220 may be formed on the surface within the reaction chamber 210 using various methods including, for example, liquid coating / deposition methods such as atomic layer deposition (ALD) and / or chemical vapor deposition (CVD) and / or electrodeposition. The reaction chamber lining 220 can have a thickness in the range of 0.1 mm to 10 mm, 0.5 to 5 mm, 1 to 3 mm, 0.0001 to 0.001 mm, 0.001 to 0.01 mm, or 0.01 to 0.1 mm, or in some cases less than 10 mm but greater than about 10 nm, greater than about 100 nm, greater than about 1 μm, greater than about 10 μm, or greater than about 100 μm. Using these thicknesses, the etching rate can be extremely low (about 1 to 10 nm / min or even lower), so the life of the chamber can be made extremely long, resulting in a life in the range of 1 to 5 years, or greater than about 1 week, greater than about 1 month, greater than about half a year, greater than about 1 year, greater than about 2 years, greater than about 3 years, greater than about 4 years, greater than about 5 years. In some embodiments, the etching rate of the reaction chamber material or lining is from about 0.1 to about 100 nm / min, from about 0.5 to about 50 nm / min, from about 1 to about 50 nm / min, or greater than 0.1 nm / min but less than about 5 nm / min, less than about 10 nm / min, less than about 25 nm / min, less than about 50 nm / min, or less than about 100 nm / min. In some embodiments, the etching rate of the reaction chamber material or lining is from about 0.001 to about 10 nm, from about 0.01 to about 5 nm, from about 0.02 to about 2 nm, from about 0.02 to about 1 nm per pulse or cycle of the etching chemical, or greater than 0.001 nm / min per pulse or cycle of the etching chemical but less than about 10 nm, less than about 5 nm, less than about 1 nm, less than about 0.5 nm, less than about 0.1 nm per pulse or cycle of the etching chemical.

[0025] By applying or utilizing a reaction chamber material and / or lining / coating that is etched by one or more reactive gases (e.g., precursors derived from one or more gases from gas sources such as gas sources 160, 170, 270, 280), or a combination of reactive gases, the impurity level or contaminant level of the substrate to be etched can be effectively reduced. In some embodiments, when the reaction chamber material or lining / coating is etched by one or more reactive gases or a combination of reactive gases, the substrate has less than about 5 at%, less than about 1 at%, less than about 0.5 at%, less than about 0.1 at%, less than about 0.05 at%, less than about 0.01 at%, less than about 0.005 at%, or less than about 0.001 at% of impurities from the reaction chamber, e.g., as metal contamination. In some cases, when the reaction chamber material or lining / coating is etched by one or more reactive gases or a combination of reactive gases, the substrate has less than 10,000 ppm, less than 1,000 ppm, less than 100 ppm, less than 50 ppm, or less than 10 ppm, or in some cases, an undetectable amount of impurities from the reaction chamber, e.g., as metal contamination.

[0026] The specific implementations illustrated and described are examples of the invention and its best mode, and are not intended to limit the scope of aspects and implementations in any way. Indeed, for the sake of brevity, conventional manufacturing, related, preparation, and other functional aspects of the system, reactor, or method may not be described in detail. Further, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or physical couplings between the various elements. Many alternative or additional functional relationships, or physical connections, may exist in the actual system and / or may not exist in some embodiments.

[0027] The configurations and / or approaches described in this specification are exemplary in nature, and it should be understood that these specific embodiments or examples are not to be considered in a limiting sense as numerous variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. Therefore, the various operations illustrated may be performed in the sequence illustrated, in other sequences, or in some cases may be omitted.

[0028] The subject matter of the present disclosure includes all novel and non-obvious combinations and sub-combinations of the various processes, systems, reactors, and configurations, as well as other features, functions, operations, and / or characteristics disclosed herein, and any and all equivalents thereof. The present invention includes the following aspects. [1] A semiconductor processing system, comprising: a reaction chamber containing a first material; a susceptor containing a second material and configured to hold a substrate for processing; a showerhead containing a third material; a first gas source configured to supply a first gas precursor to the reaction chamber in a process of etching a film on the substrate; a semiconductor processing system, wherein the first material, the second material, and the third material react with one or more of the first gas precursor and a second gas precursor to form a gas compound. [2] The first gas precursor contains one or more of TiCl 4 , TiF 4 , TiCl x , TiF x , MoCl x , MoF x , WCl x , WF x , NbCl x , NbF x , TaCl x , TaF x , VCl x , VF x , AlCl x , HfCl x, or ZrCl x , or is derived from one or more of these, the semiconductor processing system according to [1]. [3] The first material contains at least one of tungsten, molybdenum, titanium, niobium, tantalum, vanadium, aluminum, hafnium, zirconium, zinc, vanadium alloy, zinc alloy, quartz, borosilicate quartz, and stainless steel, the semiconductor processing system according to [1]. [4] The second material contains at least one of tungsten, molybdenum, titanium, niobium, tantalum, vanadium, aluminum, hafnium, zirconium, zinc, vanadium alloy, zinc alloy, quartz, borosilicate quartz, and stainless steel, the semiconductor processing system according to [1]. [5] The third material contains at least one of tungsten, molybdenum, titanium, niobium, tantalum, vanadium, aluminum, hafnium, zirconium, zinc, vanadium alloy, zinc alloy, quartz, borosilicate quartz, and stainless steel, the semiconductor processing system according to [1]. [6] The semiconductor processing system according to [1], further comprising a reaction chamber lining disposed on an inner wall of the reaction chamber, wherein the reaction chamber lining contains a fourth material that reacts with one or more of the first gas precursor and the second gas precursor to form a gas compound. [7] The semiconductor processing system according to [6], wherein the fourth material includes at least one of tungsten, molybdenum, titanium, niobium, tantalum, vanadium, aluminum, hafnium, zirconium, zinc, vanadium alloy, zinc alloy, quartz, borosilicate quartz, and stainless steel. [8] The semiconductor processing system according to [6], wherein the reaction chamber lining has a thickness in the range of 0.1 mm to 10 mm, 0.5 to 5 mm, 1 to 3 mm, 0.0001 to 0.001 mm, 0.001 to 0.01 mm, or 0.01 to 0.1 mm, less than 10 mm and greater than 10 nm, greater than 100 nm, greater than 1 μm, greater than 10 μm, or greater than 100 μm. [9] The semiconductor processing system according to [1], wherein the first gas source provides a gas including at least one of a non-metal halide, an organic halide, and a metal oxyhalide.

[10] A method of forming a semiconductor processing reactor, the method comprising: providing a reaction chamber containing a first material; providing a susceptor containing a second material and configured to hold a substrate for processing; providing a showerhead containing a third material; providing a first gas source that provides a first gas precursor to the reaction chamber in a process of etching a film on the substrate; The method, wherein the first material, the second material, and the third material react with one or more of the first gas precursor and a second gas precursor to form a gas compound.

[11] The method according to

[10] , wherein the first material includes at least one of tungsten, molybdenum, titanium, niobium, tantalum, vanadium, aluminum, hafnium, zirconium, zinc, vanadium alloy, zinc alloy, quartz, borosilicate quartz, and stainless steel.

[12] The method according to

[10] , wherein the second material includes at least one of tungsten, molybdenum, titanium, niobium, tantalum, vanadium, aluminum, hafnium, zirconium, zinc, vanadium alloy, zinc alloy, quartz, borosilicate quartz, and stainless steel.

[13] The method according to

[10] , wherein the third material includes at least one of tungsten, molybdenum, titanium, niobium, tantalum, vanadium, aluminum, hafnium, zirconium, zinc, vanadium alloy, zinc alloy, quartz, borosilicate quartz, and stainless steel.

[14] wherein the first gas precursor comprises or is derived from one or more of TiCl 4 , TiF 4 , TiCl x , TiF x , MoCl x , MoF x , WCl x , WF x , NbCl x , NbFx , TaCl x , TaF x , VCl x , VF x , AlCl x , HfCl x , and ZrCl x , the method according to

[10] .

[15] providing a lining of the reaction chamber disposed on the inner wall of the reaction chamber, the reaction chamber lining comprising a fourth material that reacts with one or more of the first gas precursor and the second gas precursor to form a gas compound, providing the reaction chamber, further comprising, the method according to

[10] .

[16] wherein the fourth material comprises at least one of tungsten, molybdenum, titanium, niobium, tantalum, vanadium, aluminum, hafnium, zirconium, zinc, vanadium alloy, zinc alloy, quartz, borosilicate quartz, and stainless steel, the method according to

[15] .

[17] wherein the reaction chamber lining has a thickness in the range of 0.1 mm to 10 mm, 0.5 to 5 mm, 1 to 3 mm, 0.0001 to 0.001 mm, 0.001 to 0.01 mm, 0.01 to 0.1 mm, less than 10 mm and greater than 10 nm, greater than 100 nm, greater than 1 μm, greater than 10 μm, or greater than 100 μm, the method according to

[15] .

[18] wherein the first gas source provides a gas comprising at least one of a non-metal halide, an organic halide, and a metal oxyhalide, the method according to

[10] .

[19] A semiconductor processing system, a reaction chamber containing a first material, a susceptor containing a second material and configured to hold a substrate for processing, the gas distribution structure in the reaction chamber or the gas distribution structure connected to the reaction chamber, the gas distribution structure comprising a third material, a first gas source for providing a first gas precursor to the reaction chamber in a process of etching a film on the substrate, and comprising, the first material, the second material, and the third material react with one or more of the first gas precursor and the second gas precursor to form a gas compound, a semiconductor processing system.

[20] The semiconductor processing system according to

[19] , wherein the gas distribution structure comprises a shower head.

[21] The semiconductor processing system according to

[19] , wherein the reaction chamber is a cross-flow reaction chamber.

Claims

1. A semiconductor processing system, a reaction chamber containing a first material, a susceptor containing a second material and configured to hold a substrate for processing, a showerhead containing a third material, a first gas supply source configured to provide a first gas precursor to the reaction chamber through a gas line between the first gas supply source and the reaction chamber in a process of etching a film on the substrate, the interior of the gas line being made of the first material, the second material, or the third material, the first material, the second material, and the third material reacting with the first gas precursor and optionally a second gas precursor to form a volatile gas compound, the semiconductor processing system being configured such that the volatile gas compound is removed from the semiconductor processing system.

2. The first gas precursor is TiCl ４ , TiF ４ , TiCl ｘ , TiF ｘ , MoCl ｘ , MoF ｘ , WCl ｘ , WF ｘ , NbCl ｘ , NbF ｘ , TaCl ｘ , TaF ｘ , VCl ｘ , VF ｘ , AlCl ｘ , HfCl ｘ , or ZrCl ｘ The semiconductor processing system according to claim 1, comprising one or more of these, or derived from one or more of these.

3. The semiconductor processing system according to claim 1, wherein the first material includes at least one of molybdenum, niobium, tantalum, vanadium, aluminum, zirconium, zinc, vanadium alloy, zinc alloy, quartz, borosilicate quartz, and stainless steel.

4. The semiconductor processing system according to claim 1, wherein the second material includes at least one of tungsten, molybdenum, titanium, niobium, tantalum, vanadium, aluminum, hafnium, zirconium, zinc, vanadium alloy, zinc alloy, quartz, borosilicate quartz, and stainless steel.

5. The semiconductor processing system according to claim 1, wherein the third material includes at least one of tungsten, molybdenum, titanium, niobium, tantalum, vanadium, aluminum, hafnium, zirconium, zinc, vanadium alloy, zinc alloy, quartz, borosilicate quartz, and stainless steel.

6. The semiconductor processing system according to claim 1, further comprising a reaction chamber lining disposed on an inner wall of the reaction chamber, the reaction chamber lining including a fourth material that reacts with one or more of the first gas precursor and the second gas precursor to form a gas compound.

7. The semiconductor processing system according to claim 6, wherein the fourth material includes at least one of tungsten, molybdenum, titanium, niobium, tantalum, vanadium, aluminum, hafnium, zirconium, zinc, vanadium alloy, zinc alloy, quartz, borosilicate quartz, and stainless steel.

8. The semiconductor processing system according to claim 6, wherein the reaction chamber lining has a thickness in the range of 0.0001 to 0.001 mm.

9. The semiconductor processing system according to claim 1, wherein the first gas source provides a gas containing a metal oxyhalide.

10. A method of forming a semiconductor processing reactor, the method comprising: providing a reaction chamber containing a first material; providing a susceptor containing a second material and configured to hold a substrate for processing; providing a showerhead containing a third material; providing a first gas source, wherein the first gas source provides a first gas precursor to the reaction chamber through a gas line between the first gas source and the reaction chamber in a process of etching a film on the substrate, and the interior of the gas line is made of the first material, the second material, or the third material; selecting and providing a first gas source configured to provide a first gas precursor to the reaction chamber for etching the first material, the second material, and the third material in a process of etching a film on the substrate based on the first material, the second material, and the third material; reacting the first material, the second material, and the third material with a first gas precursor and a second gas precursor to etch the first material, the second material, and the third material and form a volatile gas compound; removing the volatile gas compound from the reaction chamber; A method comprising the steps of.

11. The method according to claim 10, wherein the first material includes at least one of tungsten, molybdenum, titanium, niobium, tantalum, vanadium, hafnium, zirconium, zinc, vanadium alloy, zinc alloy, quartz, borosilicate quartz, and stainless steel.

12. The method according to claim 10, wherein the second material comprises at least one of tungsten, molybdenum, titanium, niobium, tantalum, vanadium, aluminum, hafnium, zirconium, zinc, vanadium alloy, zinc alloy, quartz, borosilicate quartz, and stainless steel.

13. The method according to claim 10, wherein the third material comprises at least one of tungsten, molybdenum, titanium, niobium, tantalum, vanadium, aluminum, hafnium, zirconium, zinc, vanadium alloy, zinc alloy, quartz, borosilicate quartz, and stainless steel.

14. wherein the first gas precursor is TiCl ４ , TiF ４ , TiCl ｘ , TiF ｘ , MoCl ｘ , MoF ｘ , WCl ｘ , WF ｘ , NbCl ｘ , NbF ｘ , TaCl ｘ , TaF ｘ , VCl ｘ , VF ｘ , AlCl ｘ , HfCl ｘ , and ZrCl ｘ The method according to claim 10, comprising one or more of these, or derived from one or more of these.

15. Providing a reaction chamber lining disposed on the inner wall of the reaction chamber, wherein the reaction chamber lining comprises a fourth material that reacts with one or more of the first gas precursor and the second gas precursor to form a gas compound, and further comprising providing the reaction chamber, the method according to claim 10.

16. The method according to claim 15, wherein the fourth material comprises at least one of tungsten, molybdenum, titanium, niobium, tantalum, vanadium, aluminum, hafnium, zirconium, zinc, vanadium alloy, zinc alloy, quartz, borosilicate quartz, and stainless steel.

17. The method according to claim 15, wherein the reaction chamber lining has a thickness in the range of 0.0001 to 0.001 mm.

18. The method according to claim 10, wherein the first gas source provides a gas comprising at least one of a non-metallic halide, an organic halide, and a metal oxyhalide.

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